TW201331333A - 用於粗糙表面之黏晶薄膜的切割膠帶 - Google Patents

用於粗糙表面之黏晶薄膜的切割膠帶 Download PDF

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TW201331333A
TW201331333A TW101146454A TW101146454A TW201331333A TW 201331333 A TW201331333 A TW 201331333A TW 101146454 A TW101146454 A TW 101146454A TW 101146454 A TW101146454 A TW 101146454A TW 201331333 A TW201331333 A TW 201331333A
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dicing tape
adhesive
film
acrylate
carrier
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Youn-Sang Kim
Mina Chow
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Henkel Corp
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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    • H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
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Abstract

本發明係關於一種包括載體及壓敏性黏著劑之切割膠帶，其中該壓敏性黏著劑之厚度係15 μm至50 μm。在此厚度下，用該切割膠帶捆紮之導電黏晶黏著薄膜自該切割膠帶乾淨地去除。

Description

用於粗糙表面之黏晶薄膜的切割膠帶
本發明係關於用於半導體晶圓及導電黏晶黏著薄膜之切割膠帶。
在由諸如矽及砷化鎵等材料構成之半導體晶圓之表面上製造積體電路。然後藉由使用鋸或雷射切割晶圓將晶圓分成個別積體電路。
在自晶圓切割並分離之後，將個別積體電路結合至用以製造用於最終電子裝置之電路之基板上。使用黏著劑(稱為黏晶黏著劑)將個別積體電路結合至其基板，該黏著劑包括黏著劑樹脂及高達約90重量%之導電填充劑。當前製造操作喜好在切割之前將導電黏晶黏著劑直接施加至晶圓之背側，此乃因此方式比將黏晶黏著劑施加至每一個別積體電路或基板上之積體電路之結合位點更有效。
通常，導電黏晶黏著劑係以薄膜形式提供於載體支撐膠帶或薄片(在下文中「載體支撐物」)上。為製備薄膜，將黏晶黏著劑組合物塗覆於載體支撐物上且加熱以去除存在之任何溶劑或部分地固化黏著劑。此稱為B-階段，且使黏著劑變為薄膜格式(在本文中「黏著薄膜」)且變成比加熱之前黏性小之狀態。隨後在切割操作之前將此導電黏晶黏著薄膜施加至晶圓與含有積體電路之側相對之側(「背側」)。
晶圓切割操作會對晶圓產生應力。為抵消該應力，在切 割操作期間將晶圓支撐於薄片或膠帶(稱為切割膠帶)上。許多市售切割膠帶包括載體膠帶或薄片及位於該載體上之壓敏性黏著劑，其中壓敏性黏著劑層之厚度在5 μm至10 μm之範圍內。
在一種遞送格式中，將導電黏晶黏著薄膜及切割膠帶捆紮在一起且以單一單元形式提供。導電黏著薄膜安置於切割膠帶之壓敏性黏著劑層上。在此組態中，切割膠帶之壓敏性黏著劑層與導電黏晶黏著薄膜接觸。將導電黏晶黏著薄膜黏著至半導體晶圓之附接有切割膠帶之背側。自晶圓含有電路之頂部側實施切割，且自切割膠帶拾取個別半導體晶粒及導電黏晶黏著薄膜並置於期望基板上。
由於導電黏晶黏著薄膜加載有80重量%至90重量%之導電顆粒，該等導電顆粒使得黏著薄膜之表面粗糙且不平坦，因此產生問題。在導電黏晶黏著薄膜之粗糙且不平坦表面接觸切割膠帶上之壓敏性黏著劑時，在彼等因不平坦而不能接觸之地方形成間隙。在切割之後自切割膠帶去除半導體晶粒及導電黏晶黏著薄膜時，一些黏著薄膜留在切割膠帶上。由於並非所有導電黏晶黏著薄膜皆隨半導體晶粒一起轉移，因此半導體晶粒與其期望基板之結合不平坦，從而導致潛在黏著失效。
本發明係包括載體層及壓敏性黏著劑(PSA)層之切割膠帶，其中壓敏性黏著劑層之厚度大於15 μm。在一實施例中，厚度在15 μm至30 μm之範圍內。在另一實施例中，厚 度可在補償將接觸切割膠帶黏著劑之導電黏晶黏著薄膜之任何表面不平坦所需之任何範圍內，例如至多50 μm。在此厚度值下，在黏著薄膜與切割膠帶接觸時，切割膠帶填充由導電黏晶黏著薄膜之粗糙及不平坦表面所造成之任何間隙，且使得欲自切割膠帶去除之更平坦黏著薄膜層隨後用於將半導體晶粒附接至基板。
切割膠帶之載體層可自聚合物、金屬、纖維、紙張或其他適宜材料製得。在一實施例中，載體層係自一或多種以下材料製得之聚合薄膜或薄片：聚烯烴樹脂(例如聚乙烯、丙烯共聚物、聚丁烯、聚甲基戊烯)、乙烯/乙酸乙烯酯共聚物、乙烯/(甲基)丙烯酸共聚物、乙烯/(甲基)丙烯酸酯共聚物、乙烯/丁烯共聚物、乙烯/己烯共聚物、聚胺基甲酸酯、聚酯(例如，聚(對苯二甲酸乙二酯)、聚(萘二甲酸乙二酯)、聚(對苯二甲酸丁二酯)及聚(萘二甲酸丁二酯))、聚醯亞胺、聚醯胺、聚醚酮、聚醚、聚醚碸、聚苯乙烯、聚(氯乙烯)、聚(二氯亞乙烯)、聚(乙烯醇)、聚(乙酸乙烯酯)、氯乙烯/乙酸乙烯酯共聚物及聚碳酸酯。在一實施例中，載體層係聚烯烴。
載體層可為透射輻射(例如，X射線、紫外線或電子束)者，以便可藉由自載體側輻照壓敏性黏著劑層(若其係輻射可固化的)來固化在載體層上形成之壓敏性黏著劑層。
載體層可為單層或多層構造，且在一些實施例中可含有填充劑、抗老化劑、抗靜電劑、紫外線吸收劑、抗氧化 劑、增塑劑、阻燃劑或表面活性劑。
載體層上之壓敏性黏著劑層通常係自丙烯酸酯及甲基丙烯酸酯單體製得。術語(甲基)丙烯酸酯係指丙烯酸酯或甲基丙烯酸酯中之任一者或二者。沒有一種特定壓敏性黏著劑化學物質係較佳的，且彼等熟習此項技術者已知在切割期間對導電黏晶黏著劑具有良好黏著且之後可容易且乾淨地釋放之任何壓敏性黏著劑皆可接受。
適宜的(甲基)丙烯酸酯單體包含(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基-己基酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸甲酯、(甲基)丙烯酸正丙基酯、(甲基)丙烯酸異丙基酯、(甲基)丙烯酸第三丁基酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸正辛基酯、(甲基)丙烯酸異辛基酯、(甲基)丙烯酸異壬基酯及(甲基)丙烯酸2-乙基-丁基酯。
具有其他官能基之(甲基)丙烯酸酯官能單體包含其中之(甲基)丙烯酸酯亦具有一或多個選自羧酸基團、羥基、縮水甘油基、醯胺基團及酐基團之取代基之上述單體。在一些實施例中，單體係(甲基)丙烯酸、(甲基)丙烯酸羥乙基酯、(甲基)丙烯酸羥丙基酯、(甲基)丙烯酸羥丁基酯、(甲基)丙烯酸縮水甘油基酯及N-羥甲基丙烯醯胺。
對於當前切割操作而言，切割膠帶上之PSA層之厚度將係約15 μm至30 μm。對於一些操作而言，可能需要較厚層(例如高達50 μm)以抵消導電黏晶黏著薄膜中之不平坦。
與切割膠帶之壓敏性黏著劑層接觸之導電黏晶黏著薄膜可自業內用於將半導體晶粒黏著至基板之任何適宜黏著劑 樹脂製得。該等黏著劑樹脂之實例包含丙烯酸酯、環氧樹脂、環氧丙烷及馬來醯亞胺。黏著薄膜之確切組成對於本發明而言並不重要且可由從業人員針對特定期望最終應用來決定。導電黏晶黏著薄膜按慣例係藉由將導電黏晶黏著劑組合物塗覆於載體支撐物上並將其加熱至B-階段以形成薄膜來製得。通常，將釋放襯裡安置於薄膜上以對其提供保護。
用於導電黏晶黏著薄膜之支撐載體及釋放襯裡可由相同或不同材料構成。一種適宜材料係來自St.Gobain Performance Plastics之8322號產品，其可用於支撐載體及釋放襯裡二者。一般而言，B-階段操作使得黏著薄膜更強有力地黏著至載體支撐物上而非釋放襯裡上。此釋放差異亦可藉由選擇具有不同釋放性質之釋放襯裡及載體支撐物來達成，從而與自支撐載體去除黏著薄膜相比，更易於自黏著薄膜去除釋放襯裡。
實例
使用丙烯酸酯壓敏性黏著劑以4個厚度值(亦即，10 μm、15 μm、20 μm及30 μm)塗覆80 μm聚烯烴載體(基底膠帶)以製備4個切割膠帶。
將該等試樣中之每一者層壓至含有環氧及雙馬來醯亞胺樹脂及92重量%銀顆粒之15 μm厚導電黏晶黏著薄膜。在65℃及85℃之溫度下實施層壓，以製備總共8種切割膠帶(PSA及載體)及導電黏晶黏著薄膜(於聚烯烴載體上)之層壓複合物。
在下列條件下切割層壓複合物中之每一者(未安置於半導體晶圓上)：轉軸速度：40mm/sec；供給速度：40K rpm；刀片：27HCBB；切割深度：Z2=65 μm。(自商業深度調節切割深度以計及半導體晶圓之不存在。)
在下列條件下自切割膠帶拾取黏晶黏著劑：0.5 mm針高度；10 msec延遲；及在110℃及250 g壓力下持續100 msec。然後檢查切割膠帶以確定是否有任何黏晶黏著劑殘留在切割膠帶之壓敏性黏著劑上。
結果展示於圖1中，該圖包含在去除黏晶黏著劑之後切割膠帶之光學顯微圖片。導電黏晶黏著薄膜展示為淺色區域12。該等圖展示下列結果。當在65℃下實施層壓時，10 μm、15 μm及20 μm厚切割膠帶不能補償導電黏晶黏著薄膜之不平坦表面，且黏著薄膜不能完全自切割膠帶去除；然而，30 μm厚切割膠帶乾淨地釋放導電黏晶黏著薄膜。當在85℃下實施層壓時，導電黏晶黏著薄膜不能完全自10 μm厚切割膠帶去除，但自15 μm、20 μm及30 μm厚切割膠帶乾淨地去除。
10‧‧‧正方形切割膠帶
11‧‧‧圓形壓痕
12‧‧‧留在切割膠帶上之黏晶黏著薄膜
圖1含有切割膠帶之光學顯微鏡圖片，其係在自PSA去除黏晶黏著薄膜之後自切割膠帶載體上之PSA方向獲得。每一圖片之元件係相同的，其中10係正方形切割膠帶，該正方形之四周係可見切割切口；11係由機械銷造成之圓形壓痕，該機械銷自切割膠帶與佈置黏著薄膜相對之側推動黏著薄膜(及個別積體電路晶粒)離開切割膠帶；12(淺色及 不規則形狀)係留在切割膠帶上之黏晶黏著薄膜。
10‧‧‧正方形切割膠帶
11‧‧‧圓形凹痕
12‧‧‧黏晶黏著薄膜

Claims (2)

  1. 一種切割膠帶，其包括載體及壓敏性黏著劑，其中該壓敏性黏著劑之厚度係15 μm至50 μm。
  2. 一種切割膠帶，其包括載體及壓敏性黏著劑，其中該壓敏性黏著劑之厚度係15 μm至30 μm。
TW101146454A 2011-12-15 2012-12-10 用於粗糙表面之黏晶薄膜的切割膠帶 TW201331333A (zh)

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