TW201311842A - 一種製造半導體裝置的方法，其包含在具有３．０至５．５之ｐＨ值之ＣＭＰ組成物的存在下化學機械拋光元素鍺及／或Ｓｉ１－ｘＧｅｘ材料 - Google Patents

一種製造半導體裝置的方法，其包含在具有３．０至５．５之ｐＨ值之ＣＭＰ組成物的存在下化學機械拋光元素鍺及／或Ｓｉ１－ｘＧｅｘ材料 Download PDF

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Publication number
TW201311842A
TW201311842A TW101127386A TW101127386A TW201311842A TW 201311842 A TW201311842 A TW 201311842A TW 101127386 A TW101127386 A TW 101127386A TW 101127386 A TW101127386 A TW 101127386A TW 201311842 A TW201311842 A TW 201311842A
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TW
Taiwan
Prior art keywords
cmp composition
particles
cmp
composition
additives
Prior art date
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TW101127386A
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English (en)
Chinese (zh)
Inventor
巴斯提昂 瑪登 諾勒
柏提娜 德列雪
克里斯多福 吉洛特
李玉琢
Original Assignee
巴斯夫歐洲公司
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Application filed by 巴斯夫歐洲公司 filed Critical 巴斯夫歐洲公司
Publication of TW201311842A publication Critical patent/TW201311842A/zh

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Classifications

    • H10P52/402—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H10P90/129—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
TW101127386A 2011-08-01 2012-07-30 一種製造半導體裝置的方法，其包含在具有３．０至５．５之ｐＨ值之ＣＭＰ組成物的存在下化學機械拋光元素鍺及／或Ｓｉ１－ｘＧｅｘ材料 TW201311842A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161513691P 2011-08-01 2011-08-01

Publications (1)

Publication Number Publication Date
TW201311842A true TW201311842A (zh) 2013-03-16

Family

ID=47629745

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101127386A TW201311842A (zh) 2011-08-01 2012-07-30 一種製造半導體裝置的方法，其包含在具有３．０至５．５之ｐＨ值之ＣＭＰ組成物的存在下化學機械拋光元素鍺及／或Ｓｉ１－ｘＧｅｘ材料

Country Status (9)

Country Link
US (1) US20140199841A1 (enExample)
EP (1) EP2741892A4 (enExample)
JP (1) JP2014527298A (enExample)
KR (1) KR20140071353A (enExample)
CN (1) CN103717351A (enExample)
IN (1) IN2014CN01603A (enExample)
RU (1) RU2014107762A (enExample)
TW (1) TW201311842A (enExample)
WO (1) WO2013018016A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11434391B2 (en) 2018-09-28 2022-09-06 Fujimi Incorporated Polishing composition, polishing method, and method of producing substrate
US12258492B2 (en) 2019-10-20 2025-03-25 Fujimi Incorporated Polishing composition, polishing method, and method for manufacturing substrate

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KR102028217B1 (ko) 2011-11-25 2019-10-02 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
KR20150014924A (ko) * 2012-04-18 2015-02-09 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
EP2810997A1 (en) 2013-06-05 2014-12-10 Basf Se A chemical mechanical polishing (cmp) composition
JP2018506176A (ja) 2014-12-16 2018-03-01 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ゲルマニウムを含む基板の高効率研磨のための化学機械研磨（ｃｍｐ）組成物
US10570313B2 (en) * 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
US9646842B1 (en) 2015-10-14 2017-05-09 International Business Machines Corporation Germanium smoothing and chemical mechanical planarization processes
US9646841B1 (en) 2015-10-14 2017-05-09 International Business Machines Corporation Group III arsenide material smoothing and chemical mechanical planarization processes
US9916985B2 (en) 2015-10-14 2018-03-13 International Business Machines Corporation Indium phosphide smoothing and chemical mechanical planarization processes
JP6918600B2 (ja) * 2016-07-29 2021-08-11 芝浦メカトロニクス株式会社 処理液生成装置及びそれを用いた基板処理装置
CN107665839B (zh) 2016-07-29 2021-08-10 芝浦机械电子装置股份有限公司 处理液生成装置和使用该处理液生成装置的基板处理装置
JP2022171565A (ja) * 2021-04-30 2022-11-11 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法および研磨済基板の製造方法
US20220348791A1 (en) 2021-04-30 2022-11-03 Fujimi Incorporated Polishing composition, polishing method, and method for producing polished substrate

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FR2773177B1 (fr) * 1997-12-29 2000-03-17 France Telecom Procede d'obtention d'une couche de germanium ou silicium monocristallin sur un substrat de silicium ou germanium monocristallin, respectivement, et produits multicouches obtenus
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CN100335581C (zh) * 2004-11-24 2007-09-05 中国科学院上海微系统与信息技术研究所 硫系相变材料化学机械抛光的无磨料抛光液及其应用
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11434391B2 (en) 2018-09-28 2022-09-06 Fujimi Incorporated Polishing composition, polishing method, and method of producing substrate
US12258492B2 (en) 2019-10-20 2025-03-25 Fujimi Incorporated Polishing composition, polishing method, and method for manufacturing substrate

Also Published As

Publication number Publication date
JP2014527298A (ja) 2014-10-09
WO2013018016A3 (en) 2013-03-28
CN103717351A (zh) 2014-04-09
KR20140071353A (ko) 2014-06-11
RU2014107762A (ru) 2015-09-10
EP2741892A4 (en) 2015-03-18
IN2014CN01603A (enExample) 2015-05-08
WO2013018016A2 (en) 2013-02-07
EP2741892A2 (en) 2014-06-18
US20140199841A1 (en) 2014-07-17

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