IN2014CN01603A - - Google Patents
Info
- Publication number
- IN2014CN01603A IN2014CN01603A IN1603CHN2014A IN2014CN01603A IN 2014CN01603 A IN2014CN01603 A IN 2014CN01603A IN 1603CHN2014 A IN1603CHN2014 A IN 1603CHN2014A IN 2014CN01603 A IN2014CN01603 A IN 2014CN01603A
- Authority
- IN
- India
- Prior art keywords
- mechanical polishing
- chemical mechanical
- xxa
- cmp
- composite
- Prior art date
Links
- 239000000203 mixture Substances 0.000 abstract 2
- 238000005498 polishing Methods 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 1
- 239000012736 aqueous medium Substances 0.000 abstract 1
- 239000002131 composite material Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000010954 inorganic particle Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000011146 organic particle Substances 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161513691P | 2011-08-01 | 2011-08-01 | |
| PCT/IB2012/053878 WO2013018016A2 (en) | 2011-08-01 | 2012-07-30 | A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION HAVING A pH VALUE OF 3.0 TO 5.5 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2014CN01603A true IN2014CN01603A (enExample) | 2015-05-08 |
Family
ID=47629745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN1603CHN2014 IN2014CN01603A (enExample) | 2011-08-01 | 2012-07-30 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20140199841A1 (enExample) |
| EP (1) | EP2741892A4 (enExample) |
| JP (1) | JP2014527298A (enExample) |
| KR (1) | KR20140071353A (enExample) |
| CN (1) | CN103717351A (enExample) |
| IN (1) | IN2014CN01603A (enExample) |
| RU (1) | RU2014107762A (enExample) |
| TW (1) | TW201311842A (enExample) |
| WO (1) | WO2013018016A2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013077369A1 (ja) | 2011-11-25 | 2013-05-30 | 株式会社 フジミインコーポレーテッド | 研磨用組成物 |
| US20150060400A1 (en) * | 2012-04-18 | 2015-03-05 | Fujimi Incorporated | Polishing composition |
| EP2810997A1 (en) | 2013-06-05 | 2014-12-10 | Basf Se | A chemical mechanical polishing (cmp) composition |
| WO2016097915A1 (en) | 2014-12-16 | 2016-06-23 | Basf Se | Chemical mechanical polishing (cmp) composition for high effective polishing of substrates comprising germanium |
| US10570313B2 (en) * | 2015-02-12 | 2020-02-25 | Versum Materials Us, Llc | Dishing reducing in tungsten chemical mechanical polishing |
| US9646841B1 (en) | 2015-10-14 | 2017-05-09 | International Business Machines Corporation | Group III arsenide material smoothing and chemical mechanical planarization processes |
| US9916985B2 (en) | 2015-10-14 | 2018-03-13 | International Business Machines Corporation | Indium phosphide smoothing and chemical mechanical planarization processes |
| US9646842B1 (en) | 2015-10-14 | 2017-05-09 | International Business Machines Corporation | Germanium smoothing and chemical mechanical planarization processes |
| CN107665839B (zh) | 2016-07-29 | 2021-08-10 | 芝浦机械电子装置股份有限公司 | 处理液生成装置和使用该处理液生成装置的基板处理装置 |
| JP6918600B2 (ja) * | 2016-07-29 | 2021-08-11 | 芝浦メカトロニクス株式会社 | 処理液生成装置及びそれを用いた基板処理装置 |
| TWI821407B (zh) | 2018-09-28 | 2023-11-11 | 日商福吉米股份有限公司 | 研磨用組合物、研磨方法及基板之製造方法 |
| JP7638667B2 (ja) | 2019-11-20 | 2025-03-04 | 株式会社フジミインコーポレーテッド | 研磨組成物、研磨方法および基板の製造方法 |
| US20220348791A1 (en) | 2021-04-30 | 2022-11-03 | Fujimi Incorporated | Polishing composition, polishing method, and method for producing polished substrate |
| JP2022171565A (ja) * | 2021-04-30 | 2022-11-11 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨方法および研磨済基板の製造方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3429080A (en) * | 1966-05-02 | 1969-02-25 | Tizon Chem Corp | Composition for polishing crystalline silicon and germanium and process |
| JP3027551B2 (ja) * | 1997-07-03 | 2000-04-04 | キヤノン株式会社 | 基板保持装置ならびに該基板保持装置を用いた研磨方法および研磨装置 |
| FR2773177B1 (fr) * | 1997-12-29 | 2000-03-17 | France Telecom | Procede d'obtention d'une couche de germanium ou silicium monocristallin sur un substrat de silicium ou germanium monocristallin, respectivement, et produits multicouches obtenus |
| JP4090589B2 (ja) * | 1998-09-01 | 2008-05-28 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US6270395B1 (en) * | 1998-09-24 | 2001-08-07 | Alliedsignal, Inc. | Oxidizing polishing slurries for low dielectric constant materials |
| US6890835B1 (en) * | 2000-10-19 | 2005-05-10 | International Business Machines Corporation | Layer transfer of low defect SiGe using an etch-back process |
| EP1566420A1 (en) * | 2004-01-23 | 2005-08-24 | JSR Corporation | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method |
| US6893936B1 (en) * | 2004-06-29 | 2005-05-17 | International Business Machines Corporation | Method of Forming strained SI/SIGE on insulator with silicon germanium buffer |
| CN1300271C (zh) * | 2004-09-24 | 2007-02-14 | 中国科学院上海微系统与信息技术研究所 | 硫系化合物相变材料化学机械抛光的纳米抛光液及其应用 |
| CN100335581C (zh) * | 2004-11-24 | 2007-09-05 | 中国科学院上海微系统与信息技术研究所 | 硫系相变材料化学机械抛光的无磨料抛光液及其应用 |
| TWI402335B (zh) * | 2006-09-08 | 2013-07-21 | Kao Corp | 研磨液組合物 |
| US7678605B2 (en) * | 2007-08-30 | 2010-03-16 | Dupont Air Products Nanomaterials Llc | Method for chemical mechanical planarization of chalcogenide materials |
| FR2932108B1 (fr) * | 2008-06-10 | 2019-07-05 | Soitec | Polissage de couches de germanium |
| CN101372606B (zh) * | 2008-10-14 | 2013-04-17 | 中国科学院上海微系统与信息技术研究所 | 用氧化铈化学机械抛光液抛光硫系化合物相变材料的方法 |
| US8110483B2 (en) * | 2009-10-22 | 2012-02-07 | International Business Machines Corporation | Forming an extremely thin semiconductor-on-insulator (ETSOI) layer |
-
2012
- 2012-07-30 KR KR1020147005643A patent/KR20140071353A/ko not_active Withdrawn
- 2012-07-30 US US14/130,629 patent/US20140199841A1/en not_active Abandoned
- 2012-07-30 EP EP12819369.5A patent/EP2741892A4/en not_active Withdrawn
- 2012-07-30 RU RU2014107762/28A patent/RU2014107762A/ru not_active Application Discontinuation
- 2012-07-30 TW TW101127386A patent/TW201311842A/zh unknown
- 2012-07-30 WO PCT/IB2012/053878 patent/WO2013018016A2/en not_active Ceased
- 2012-07-30 IN IN1603CHN2014 patent/IN2014CN01603A/en unknown
- 2012-07-30 CN CN201280037681.8A patent/CN103717351A/zh active Pending
- 2012-07-30 JP JP2014523428A patent/JP2014527298A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014527298A (ja) | 2014-10-09 |
| CN103717351A (zh) | 2014-04-09 |
| EP2741892A4 (en) | 2015-03-18 |
| RU2014107762A (ru) | 2015-09-10 |
| TW201311842A (zh) | 2013-03-16 |
| KR20140071353A (ko) | 2014-06-11 |
| WO2013018016A2 (en) | 2013-02-07 |
| EP2741892A2 (en) | 2014-06-18 |
| WO2013018016A3 (en) | 2013-03-28 |
| US20140199841A1 (en) | 2014-07-17 |
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