TW201305740A - Exposure method and apparatus thereof - Google Patents

Exposure method and apparatus thereof Download PDF

Info

Publication number
TW201305740A
TW201305740A TW101117639A TW101117639A TW201305740A TW 201305740 A TW201305740 A TW 201305740A TW 101117639 A TW101117639 A TW 101117639A TW 101117639 A TW101117639 A TW 101117639A TW 201305740 A TW201305740 A TW 201305740A
Authority
TW
Taiwan
Prior art keywords
exposure
light
exposure light
information
substrate
Prior art date
Application number
TW101117639A
Other languages
Chinese (zh)
Other versions
TWI459155B (en
Inventor
Kana Nemoto
Satoshi Takahashi
Yasuhiro Yoshitake
Shigenobu Maruyama
Keiko Yoshimizu
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of TW201305740A publication Critical patent/TW201305740A/en
Application granted granted Critical
Publication of TWI459155B publication Critical patent/TWI459155B/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F5/00Screening processes; Screens therefor
    • G03F5/02Screening processes; Screens therefor by projection methods
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/7015Details of optical elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70233Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70316Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages

Abstract

The exposure optical mechanism of the exposure apparatus disclosed in this invention includes: a light integrator for converting exposure light beams emitted from a light source into a plurality of point light sources; a collimator lens for converting the exposure light beams that passes through the light integrator into parallel light; a reflector unit using a plane mirror to reflect the exposure light beams which are converted into parallel light by the collimator to irradiate the same onto a photo-mask; and actuators of the reflector unit for pushing the plane mirror, where the actuators are arranged in a two-dimensional manner on the surface opposite to the exposure light reflection surface. The control mechanism calculates the driving amounts for each of the actuators of the reflector unit, based on the related point light source information of the light integrator obtained from exposure light beams irradiated at the position on the substrate disposed on the carrier unit, for controlling each of the actuators respectively.

Description

曝光方法及其裝置 Exposure method and device thereof

本發明係關於平板顯示器之製造步驟中於玻璃基板上形成圖案時之曝光技術,尤其係關於適合在液晶顯示器之彩色濾光片製造步驟之曝光步驟中於大面積玻璃基板上均一地曝光之曝光方法及其裝置。 The present invention relates to an exposure technique for forming a pattern on a glass substrate in a manufacturing step of a flat panel display, and more particularly to an exposure suitable for uniform exposure on a large-area glass substrate in an exposure step of a color filter manufacturing step of a liquid crystal display. Method and apparatus therefor.

於圖9顯示目前之液晶顯示器製造之製造步驟例。首先,於玻璃基板步驟921、922中,進行玻璃基板之切斷後,分成前面板、背面板二個步驟。對於背面板,於陣列步驟923中,於玻璃基板上重複進行成膜步驟、光微影步驟,而形成薄膜電晶體。又,對於前面板,於彩色濾光片步驟924中,將紅、綠、藍彩色濾光片形成於基板上,而於上部形成透明電極(ITO)。其後,在下一單元步驟925組合由前述2個步驟完成之兩個基板,於其間置入液晶物質。再者,在模組步驟926中,組裝背光及驅動用電源等,而完成液晶顯示器。 An example of the manufacturing steps of the current liquid crystal display manufacturing is shown in FIG. First, in the glass substrate steps 921 and 922, the glass substrate is cut, and then divided into a front panel and a back panel. For the back sheet, in the array step 923, the film forming step and the photolithography step are repeated on the glass substrate to form a thin film transistor. Further, in the front panel, in the color filter step 924, red, green, and blue color filters are formed on the substrate, and a transparent electrode (ITO) is formed on the upper portion. Thereafter, the two substrates completed by the above two steps are combined in the next unit step 925, and a liquid crystal substance is placed therebetween. Furthermore, in the module step 926, the backlight and the driving power source and the like are assembled to complete the liquid crystal display.

此處,針對彩色濾光片步驟之詳情以圖10敘述。目前主流是將以顏料為基底之彩色抗蝕劑塗布於玻璃上,隋之進行曝光或顯影之光微影法。首先,以洗淨步驟1031洗淨玻璃基板表面,以塗布步驟1032於玻璃基板全面塗布彩色抗蝕劑(彩色抗蝕劑塗布步驟)。其後,以曝光步驟1033經由光罩進行圖案曝光並UV硬化,使之難熔化。其後,以顯影步驟1034利用顯影液將彩色抗蝕劑之不需要之部分去除 後,再次以洗淨步驟1035洗淨顯影後之表面,以烘烤使之硬化(顯影、烘烤)。然後,重複3次彩色抗蝕劑塗布、曝光、顯影、烘烤步驟。其後,經過塗層步驟1036、洗淨步驟1037、檢查步驟1038,以ITO膜形成步驟1039使用鍍濺法形成ITO(透明介電)膜,進行最終檢查步驟1040,成為進入下一單元組合步驟之構造。 Here, the details of the color filter step are described in FIG. At present, the mainstream is a photolithography method in which a pigment-based color resist is applied to a glass and exposed or developed. First, the surface of the glass substrate is washed in the cleaning step 1031, and the color resist is entirely applied to the glass substrate in the coating step 1032 (color resist coating step). Thereafter, pattern exposure is performed through the photomask in the exposure step 1033 and UV hardening to make it difficult to melt. Thereafter, the undesired portion of the color resist is removed using the developer in the developing step 1034. Thereafter, the developed surface is washed again by a washing step 1035 to be baked to be hardened (developed, baked). Then, the color resist coating, exposure, development, and baking steps were repeated three times. Thereafter, after the coating step 1036, the cleaning step 1037, and the inspection step 1038, an ITO (transparent dielectric) film is formed by a plating method using an ITO film forming step 1039, and a final inspection step 1040 is performed to proceed to the next unit combination step. Construction.

將彩色濾光片之結構例顯示於圖11。於玻璃基板1141上,形成有黑矩陣1142、RGB三原色圖案1143、1144、1145,且形成有ITO膜1146,此即彩色濾光片。 A structural example of a color filter is shown in FIG. On the glass substrate 1141, a black matrix 1142, RGB three primary color patterns 1143, 1144, and 1145 are formed, and an ITO film 1146, which is a color filter, is formed.

又,作為彩色濾光片步驟之曝光步驟所使用之曝光裝置,有使用透鏡或反射鏡將光罩之圖案投影於基板上之投影方式,與在光罩與基板之間設置微小間隔(貼近間隙),將光罩之圖案向基板轉印之近接方式。近接方式與投影方式相比圖案之解像度較差,但照射光學系統之構成簡單,且適用於處理能力較高之量產。 Further, as an exposure apparatus used in the exposure step of the color filter step, there is a projection method in which a pattern of the mask is projected onto the substrate by using a lens or a mirror, and a minute interval is provided between the mask and the substrate (close to the gap) ), a proximity mode in which the pattern of the photomask is transferred to the substrate. The proximity mode is inferior to the projection method in comparison with the projection method, but the illumination optical system has a simple configuration and is suitable for mass production with high processing capability.

近接曝光中,於曝光面之表面設置塗布有感光劑之玻璃基板,將保持於光罩載台之光罩與玻璃基板在維持數百μm之間隙之狀態下照射曝光光線,藉由穿過光罩之光而使塗布於玻璃基板之感光劑曝光。 In the proximity exposure, a glass substrate coated with a sensitizer is provided on the surface of the exposure surface, and the exposure light is irradiated while maintaining the gap between the reticle and the glass substrate held by the reticle stage by a distance of several hundred μm. The sensitizer applied to the glass substrate is exposed by the light of the cover.

液晶顯示器可做成1塊玻璃基板至數片至數十片面板(切割片數),藉由增加該切割片數,可預期生產效率、良率提高,因而促進玻璃基板、光罩之大型化。 The liquid crystal display can be made into one glass substrate to several to several tens of panels (the number of dicing sheets), and by increasing the number of dicing sheets, productivity and yield can be expected to be improved, thereby promoting the enlargement of the glass substrate and the reticle. .

作為液晶顯示器用玻璃基板之曝光裝置,例如如專利文獻1所記載,在使從光源發射之光沿著組合有反射鏡之光 徑前進並照射於光罩,而於基板上投影曝光圖案之構成中,記載有於組合有反射鏡之光徑中途設置蠅眼透鏡而使光強度均一化之構成。但由於大型化進展,玻璃基板或光罩容易因處理熱而由伸縮夾具引起變形,若忽視該變形而進行曝光,則有可能導致所形成之圖案產生偏差之問題。 An exposure apparatus for a glass substrate for a liquid crystal display, for example, as disclosed in Patent Document 1, is configured to emit light emitted from a light source along a light combined with a mirror In the configuration in which the film is projected on the substrate and the exposure pattern is projected on the substrate, a fly-eye lens is provided in the middle of the optical path in which the mirror is combined, and the light intensity is made uniform. However, due to the progress of the enlargement, the glass substrate or the photomask is easily deformed by the telescopic jig due to the heat of treatment, and if the deformation is ignored and the exposure is performed, there is a possibility that the formed pattern is deviated.

作為該問題之解決方式,日本特開2005-129785號公報(專利文獻2)中記載有一種構成,其使配置於光罩正前方之準直鏡之邊部分向以中央部為支點相對於面交差之方向變位,藉此極容易地調整照射於光罩上之光之曝光倍率,而可根據曝光時光罩之伸縮狀態及被曝光基板之伸縮狀態,調整應於被曝光基板上作成之圖案大小。 Japanese Patent Laid-Open Publication No. 2005-129785 (Patent Document 2) discloses a configuration in which a side portion of a collimating mirror disposed directly in front of a reticle is opposed to a surface with a central portion as a fulcrum. The direction of the intersection is displaced, so that the exposure magnification of the light irradiated on the reticle can be adjusted very easily, and the pattern to be formed on the substrate to be exposed can be adjusted according to the expansion and contraction state of the reticle during exposure and the expansion and contraction state of the substrate to be exposed. size.

另一方面,日本再公表專利WO2007-145038號公報(專利文獻3)中記載有一種方法,其檢測光罩與基板之平面偏差量,根據檢測出之平面偏差量而設定由準直鏡反射之曝光用光之照射角度,藉此可縮小曝光面上之照度不均及變動而進行更均一之倍率修正,實現圖案形成精度修正。 On the other hand, Japanese Laid-Open Patent Publication No. WO2007-145038 (Patent Document 3) discloses a method of detecting a plane deviation amount between a photomask and a substrate, and setting a reflection by a collimator mirror according to the detected plane deviation amount. The irradiation angle of the exposure light can reduce the illuminance unevenness and variation on the exposure surface, and perform more uniform magnification correction to correct the pattern formation accuracy.

又,日本特開2010-256428號公報(專利文獻4)中記載有一種構成,其以複數個半導體發光元件形成照明光源,改變點燈之半導體發光元件之個數而調整曝光光線之照度。 Japanese Laid-Open Patent Publication No. 2010-256428 (Patent Document 4) discloses a configuration in which an illumination source is formed by a plurality of semiconductor light-emitting elements, and the number of light-emitting semiconductor light-emitting elements is changed to adjust the illuminance of the exposure light.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2003-177548號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2003-177548

[專利文獻2]日本特開2005-129785號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2005-129785

[專利文獻3]日本再公表專利WO2007-145038號公報 [Patent Document 3] Japanese Re-Patent Patent WO2007-145038

[專利文獻4]日本特開2010-256428號公報 [Patent Document 4] Japanese Patent Laid-Open Publication No. 2010-256428

為對應於液晶顯示器之高精細化及3D顯示,於微影步驟中於大面積玻璃基板上形成進而微細且高精度之像素圖案變得重要。因此,對於微影步驟中用以於大面積玻璃基板上將圖案曝光之曝光裝置,要求在玻璃基板上之大區域均一地將圖案曝光。 In order to correspond to the high definition and 3D display of the liquid crystal display, it is important to form a fine and highly precise pixel pattern on the large-area glass substrate in the lithography step. Therefore, for an exposure apparatus for exposing a pattern on a large-area glass substrate in the lithography step, it is required to uniformly expose the pattern on a large area on the glass substrate.

專利文獻1中記載有於曝光光線之光徑中配置蠅眼透鏡而使光強度均一化之構成,但曝光之玻璃基板之面積若大面積化,則光罩之面積亦隋之變大,因此僅蠅眼透鏡無法謀求充分之曝光光線之均一化。 Patent Document 1 discloses a configuration in which a fly-eye lens is disposed in a light path of an exposure light to uniformize light intensity. However, if the area of the exposed glass substrate is large, the area of the mask is also increased. Only fly-eye lenses are not able to achieve sufficient uniformity of exposure light.

另一方面,專利文獻2所記載之方法中,雖然在如被曝光基板之大小或光罩之大小於每次曝光皆有所變化之情形下亦可容易修正,而可始終進行高精度曝光,但有助於反射鏡變形之調整機構為4處,比較少,但在欲使反射鏡局部變形之情形下,由於變形之範圍較大,導致全體之修正變得粗糙,因此在光罩之面積變大之情形中,難以高精度重現期望之曝光圖案。 On the other hand, in the method described in Patent Document 2, it is possible to easily correct the case where the size of the substrate to be exposed or the size of the mask varies with each exposure, and high-accuracy exposure can always be performed. However, there are four adjustment mechanisms that contribute to the deformation of the mirror, but in the case where the mirror is locally deformed, since the range of deformation is large, the correction of the whole becomes rough, so the area of the mask is In the case of becoming large, it is difficult to reproduce the desired exposure pattern with high precision.

又,專利文獻3所記載之方法中,由於未掌握成為曝光裝置之變形對象之反射鏡設置時之初始形狀,因此若反射鏡之初始形狀彎曲之程度超出預料之情形時,修正形狀時會導致超過反射鏡之容許應力,而有可能使反射鏡破損。又,在無法掌握初始形狀之情形下,由於無法將實際形狀 與理想形狀(滿足目標中心光線角度、照度分佈之形狀)之差定量化,因此無法對調整機構進行正確之反饋,而可能導致調整耗費時間。 Further, in the method described in Patent Document 3, since the initial shape at the time of setting the mirror to be deformed by the exposure device is not grasped, if the initial shape of the mirror is bent beyond the expected state, the shape is corrected when the shape is corrected. Exceeding the allowable stress of the mirror, it is possible to break the mirror. Also, in the case where the initial shape cannot be grasped, the actual shape cannot be obtained The difference between the ideal shape (the shape of the target center ray angle and the illuminance distribution) is quantified, so that the correct feedback of the adjustment mechanism cannot be performed, which may result in adjustment time consuming.

再者,專利文獻4所記載之方法中,雖可改變構成照明光源之複數個半導體發光元件之點燈個數而調整曝光光線之照度,但於光徑中配置有蠅眼透鏡等之光積分器元件或複數個反射鏡之構成中,難以在最遠離光罩之光源側微調照射於光罩之光之分佈。 Further, in the method described in Patent Document 4, the illuminance of the exposure light can be adjusted by changing the number of lightings of the plurality of semiconductor light-emitting elements constituting the illumination light source, but light integration such as a fly-eye lens is disposed in the optical path. In the configuration of the element or the plurality of mirrors, it is difficult to finely adjust the distribution of the light that is irradiated to the reticle on the side of the light source farthest from the reticle.

本發明提供一種對於在曝光光學系統中設置於光罩正前方之平面鏡,不超過容許應力地嚴密控制曝光面上之中心光線角度、照度分佈,藉此可進行高精度之圖案曝光之方法。 The present invention provides a method for performing high-precision pattern exposure by strictly controlling a central ray angle and an illuminance distribution on an exposure surface without exceeding an allowable stress in a plane mirror disposed directly in front of a reticle in an exposure optical system.

又,本發明提供一種可以短時間實現用以嚴密控制曝光面上之中心光線角度、照度分佈之光學系統之調整之方法。 Further, the present invention provides a method for accurately adjusting the optical system for controlling the central ray angle and illuminance distribution on the exposure surface in a short time.

本發明中,利用中心光線角度測定機構與光學模擬器等機構,掌握現狀之平面鏡形狀,在平面鏡之彎曲容許應力量內使平面鏡變形。 In the present invention, the center mirror angle measuring mechanism and the optical simulator are used to grasp the current shape of the plane mirror, and the plane mirror is deformed within the allowable stress amount of the plane mirror.

又,本發明中,利用中心光線角度測定機構與光學模擬器等機構,進行現狀之平面鏡形狀與理想形狀之比較,並將算出之修正量向平面鏡反饋。 Further, in the present invention, a mechanism such as a center ray angle measuring means and an optical simulator is used to compare the current shape of the plane mirror with the ideal shape, and the calculated correction amount is fed back to the plane mirror.

具體言之,首先利用針孔相機實測曝光面上之光線之中心光線角度。由上述實測值以光學模擬器算出實際之平面 鏡之形狀,再者,求得使曝光面上之光線之中心光線角度、照度分佈滿足目標值之平面鏡之變形條件,算出由上述所得之平面鏡最佳形狀與現狀之平面鏡之形狀差,並向實際之平面鏡背面之致動器自動反饋。 Specifically, the center ray angle of the light on the exposure surface is first measured using a pinhole camera. Calculate the actual plane from the measured values using an optical simulator The shape of the mirror, in addition, the deformation condition of the plane mirror that satisfies the central ray angle and the illuminance distribution of the light on the exposure surface to satisfy the target value, and calculates the shape difference between the best shape of the plane mirror obtained above and the current state of the plane mirror, and The actuator on the back of the actual mirror is automatically fed back.

即,為解決上述問題,本發明之曝光裝置具備:包含發射曝光光線之光源的曝光光學機構;保持光罩之光罩保持件機構;載置基板並可在平面內移動之載台機構;控制曝光光學機構與載台機構並依次曝光載置於載台機構之基板上之控制機構,其中,曝光光學機構具備:光積分器,其將從光源發射之曝光光線轉換成多數個點光源;準直鏡,其將穿透該光積分器之曝光光線轉換成平行光;及反射鏡單元,其將以該準直鏡轉換成平行光之曝光光線以平面鏡反射,而對保持於光罩保持件之光罩照射;該反射鏡單元裝備排列成2維狀之推壓平面鏡之與反射曝光光線之面成相反側之面之致動器;控制機構基於使用從對相當於載置於載台機構之基板表面之位置照射之曝光光線而得之光積分器之點光源之相關資訊算出之反射鏡單元之排列成2維狀之各致動器之驅動量而控制該致動器。 That is, in order to solve the above problems, the exposure apparatus of the present invention includes: an exposure optical mechanism including a light source that emits exposure light; a mask holder mechanism that holds the mask; and a stage mechanism that mounts the substrate and is movable in a plane; The exposure optical mechanism and the stage mechanism sequentially expose the control mechanism mounted on the substrate of the stage mechanism, wherein the exposure optical mechanism includes: an optical integrator that converts the exposure light emitted from the light source into a plurality of point light sources; a straight mirror that converts exposure light that penetrates the light integrator into parallel light; and a mirror unit that converts the exposure light converted into parallel light by the collimating mirror to a plane mirror, and the pair is held by the mask holder Illuminating the reticle; the mirror unit is equipped with an actuator arranged in a two-dimensional manner to push the plane mirror opposite to the surface of the reflected exposure light; the control mechanism is based on the use of the pair to be placed on the stage mechanism The information about the point source of the optical integrator obtained by the exposure of the light on the surface of the substrate, and the amount of the actuators arranged in the two-dimensional shape of the mirror unit Controlling the actuator.

又,為解決上述問題,本發明之曝光方法係遍及基板之全面重複將從光源發射之曝光光線經由光學系照射於形成有穿透光之圖案之光罩上,且將照射於該光罩之曝光光線中穿透圖案之曝光光線投射於塗布在與光罩近接配置之基板之第1區域上之抗蝕劑而曝光該抗蝕劑,藉此以形成於光罩之圖案曝光基板之正面之方法,其中,以如下方式將 曝光光線照射於光罩:使自光源發射之曝光光線穿透光積分器而轉換成複數個點光源,將穿透該光積分器而經轉換成複數個光源之曝光光線以準直鏡轉換成平行光,將經轉換成該平行光之曝光光線以於背面裝備排列成2維狀之致動器之平面鏡反射並照射於光罩;基於使用自照射於相當於曝光之基板表面之位置之曝光光線而得之光積分器之點光源之相關資訊算出之各致動器之驅動量,控制於平面鏡之背面排列成2維狀之致動器。 In order to solve the above problems, the exposure method of the present invention repeats the exposure light emitted from the light source through the optical system to the reticle formed with the pattern of penetrating light, and will illuminate the reticle. Exposure light penetrating the pattern in the exposure light is projected onto the resist applied to the first region of the substrate disposed in close proximity to the mask to expose the resist, thereby forming the front surface of the substrate exposed by the pattern of the mask Method, where will be The exposure light is irradiated to the reticle: the exposure light emitted from the light source is transmitted through the optical integrator to be converted into a plurality of point light sources, and the exposure light that is transmitted through the optical integrator and converted into a plurality of light sources is converted into a collimating mirror Parallel light, the exposure light converted into the parallel light is reflected by the plane mirror of the actuator arranged in a two-dimensional shape on the back surface and irradiated to the reticle; based on the exposure using the position irradiated on the surface corresponding to the exposed substrate The driving amount of each actuator calculated from the information about the point source of the light integrator obtained by the light is controlled by an actuator arranged in a two-dimensional shape on the back surface of the plane mirror.

藉此,即使在對液晶顯示器之製造要求光罩大型化且更嚴密之圖案控制之情形下,亦可精密地控制平面鏡,從而可提高製造良率,可實現工業廢棄物之減少等。 Thereby, even in the case where the manufacturing of the liquid crystal display requires a large size of the mask and more strict pattern control, the plane mirror can be precisely controlled, the manufacturing yield can be improved, and the industrial waste can be reduced.

以下,針對本發明之各實施形態,參照附圖詳細說明。 Hereinafter, each embodiment of the present invention will be described in detail with reference to the drawings.

[實施例1] [Example 1]

本實施例係液晶顯示器之製造中使用近接曝光方式實施者。 This embodiment is a method of using a proximity exposure method in the manufacture of a liquid crystal display.

使用圖1、圖8顯示用以實施本發明之裝置之一例,針對使近接曝光光學系統之平面鏡之形狀最佳化,且算出滿足目標之中心光線角度、照度分佈之平面鏡之最佳條件,並向實際之光學系統反饋之方法進行說明。 An example of a device for implementing the present invention is shown in FIGS. 1 and 8 for optimizing the shape of a plane mirror of a proximity exposure optical system, and calculating an optimum condition of a plane mirror satisfying a target central ray angle and an illuminance distribution, and The method of feeding back to the actual optical system will be described.

圖1係顯示本發明之曝光裝置100之一實施形態之全體構成之概要圖之例。曝光裝置100具備曝光光學系統單元110、載台單元130、控制/驅動單元150而構成。為維持正 常環境,曝光光學系統單元110與載台單元130由用以遮斷來自外部之氣流之框體101覆蓋。於框體101上設有用以將內部之氣體向外部排氣之排氣口102。 Fig. 1 is a view showing an outline of a general configuration of an embodiment of an exposure apparatus 100 according to the present invention. The exposure device 100 includes an exposure optical system unit 110, a stage unit 130, and a control/drive unit 150. To maintain positive In a normal environment, the exposure optical system unit 110 and the stage unit 130 are covered by a housing 101 for blocking airflow from the outside. An exhaust port 102 for exhausting the internal gas to the outside is provided in the casing 101.

曝光光學系統單元110具備:光源113,其包含水銀燈等發射含紫外線之光之燈111與橢圓鏡112;第1反射鏡114,其用以轉換從光源113發射之曝光光線之光徑;快門115,其配置於經該第1反射鏡114轉換之曝光光線之光徑上,切換曝光光線之截斷與通過(開與關);光積分器116,其為使通過快門115之曝光光線之強度分佈均一化,而以第1蠅眼透鏡1161與第2蠅眼透鏡1162之組合構成;第2反射鏡117,其轉換經以光積分器116使強度分佈均一化之曝光光線之光徑;準直鏡118,其反射經第2反射鏡117轉換光徑之曝光光線而形成平行光;反射鏡單元120,其將由該準直鏡118形成之平行光向光罩140之方向反射。另,快門115藉由未圖示之快門驅動機構而切換曝光光線之截斷與通過。 The exposure optical system unit 110 includes a light source 113 including a lamp 111 and an elliptical mirror 112 that emit ultraviolet light, such as a mercury lamp, and a first mirror 114 for converting an optical path of the exposure light emitted from the light source 113; the shutter 115; And arranged on the optical path of the exposure light converted by the first mirror 114 to switch the interception and passing of the exposure light (on and off); the optical integrator 116 is configured to make the intensity distribution of the exposure light passing through the shutter 115 Uniform, and combined with a first fly's eye lens 1161 and a second fly's eye lens 1162; a second mirror 117 that converts the light path of the exposure light that is uniformized by the light integrator 116; collimation The mirror 118 reflects the exposure light converted by the second mirror 117 to form parallel light, and the mirror unit 120 reflects the parallel light formed by the collimator 118 in the direction of the mask 140. Further, the shutter 115 switches the interception and passage of the exposure light by a shutter drive mechanism (not shown).

載台單元130具備:在X方向移動之X載台131;在對紙面垂直之Y方向移動之Y載台132;在Z方向移動之Z載台133;繞Z軸旋轉之θ載台134;夾住試料(基板)1之基板夾具135。 The stage unit 130 includes an X stage 131 moving in the X direction, a Y stage 132 moving in the Y direction perpendicular to the paper surface, a Z stage 133 moving in the Z direction, and a θ stage 134 rotating around the Z axis; The substrate holder 135 of the sample (substrate) 1 is sandwiched.

光罩140以與試料1間保持微小間隙之狀態被保持於光罩保持件141上。光罩保持件141中內建有使光罩在Z方向上下移動之驅動機構(未圖示)。 The photomask 140 is held by the mask holder 141 in a state of maintaining a slight gap with the sample 1. A drive mechanism (not shown) for moving the mask up and down in the Z direction is built in the mask holder 141.

控制/驅動單元150具備:控制載台單元130之各載台之 移動之載台控制部151;控制載台單元130之基板夾具135之動作之基板夾具控制部152;控制光罩保持件141之光罩140之保持之光罩保持件驅動部153;控制光源113之燈111之開、關或光量之燈電源控制部154;控制利用快門115切換曝光光線之截斷與通過之快門切換控制部155;控制反射鏡單元120之反射鏡單元控制部156及控制全體之全體控制部157。 The control/drive unit 150 is provided to control each stage of the stage unit 130 a moving stage control unit 151; a substrate holder control unit 152 that controls the operation of the substrate holder 135 of the stage unit 130; a mask holder driving unit 153 that controls the holding of the mask 140 of the mask holder 141; and the control light source 113 The lamp power supply control unit 154 for turning on, off or light of the lamp 111; the shutter switching control unit 155 for controlling the switching of the exposure light by the shutter 115; the mirror unit control unit 156 for controlling the mirror unit 120 and the control unit The overall control unit 157.

如圖2A所示,反射鏡單元120具備平面鏡121、複數個致動器122、致動器驅動部123而構成。圖2B係顯示相對於平面鏡121之複數個致動器122之配置之圖。作為複數個致動器122,使用壓電元件。致動器驅動部123接收來自外部之信號,個別控制配置成2維狀之複數個致動器122並推壓平面鏡121之背面,而調整平面鏡121之微小凹凸量。 As shown in FIG. 2A, the mirror unit 120 includes a plane mirror 121, a plurality of actuators 122, and an actuator driving unit 123. 2B is a diagram showing the configuration of a plurality of actuators 122 with respect to the plane mirror 121. As the plurality of actuators 122, a piezoelectric element is used. The actuator drive unit 123 receives signals from the outside, individually controls a plurality of actuators 122 arranged in two dimensions, and presses the back surface of the plane mirror 121 to adjust the amount of fine unevenness of the plane mirror 121.

又,控制/驅動單元150以反射鏡單元控制部156控制反射鏡單元120,根據使用由照射於相當於後述曝光之基板表面位置之曝光光線而得之光積分器之點光源之相關資訊所算出之各致動器122之驅動量,驅動於平面鏡121之背面配置成2維狀之複數個致動器122。 Further, the control/drive unit 150 controls the mirror unit 120 by the mirror unit control unit 156, and calculates the information based on the point light source of the optical integrator obtained by irradiating the exposure light corresponding to the surface position of the substrate to be described later. The driving amount of each of the actuators 122 is driven by a plurality of actuators 122 arranged in a two-dimensional shape on the back surface of the plane mirror 121.

接著,說明利用上述構成之動作。首先,載台單元130接收在離開光罩保持件141之處以未圖示之基板操縱裝置搬送之基板1,在藉由以基板夾具控制部152所驅動控制之基板夾具135夾住並保持基板1之狀態下,以使基板1位於光罩保持件141下方之方式移動。此時,快門115以快門切換控制部155控制而遮斷曝光光線。又,光罩保持件141為 避免移動而來之基板1與光罩140發生干擾,而藉由未圖示之驅動機構於Z方向退避。 Next, the operation using the above configuration will be described. First, the stage unit 130 receives the substrate 1 conveyed by a substrate manipulation device (not shown) away from the mask holder 141, and holds and holds the substrate 1 by the substrate holder 135 controlled by the substrate holder control unit 152. In this state, the substrate 1 is moved so as to be positioned below the mask holder 141. At this time, the shutter 115 is controlled by the shutter switching control unit 155 to block the exposure light. Moreover, the mask holder 141 is The substrate 1 that is prevented from moving interferes with the mask 140, and is retracted in the Z direction by a driving mechanism (not shown).

若基板1之向光罩保持件141下方之移動結束,則光罩140藉由未圖示之驅動機構驅動並下降,與基板1形成特定之間隙。 When the movement of the substrate 1 under the mask holder 141 is completed, the mask 140 is driven and lowered by a driving mechanism (not shown) to form a specific gap with the substrate 1.

接著,在以燈電源控制部154控制而使光源113之燈111打開之狀態下,快門切換控制部155控制快門115,使曝光光線通過。通過快門115之曝光光線由第2反射鏡117、準直鏡118、反射鏡單元120之平面鏡121依次反射,而照射於保持於光罩保持件141之光罩140。藉由照射於該光罩140之曝光光線中穿透形成於光罩140之光穿透圖案之曝光光線,而使與光罩140具有微小間隙且由基板夾具135夾住之基板1之表面所塗布之抗蝕劑中位在光罩140正下方之抗蝕劑曝光。 Next, in a state where the lamp 111 of the light source 113 is turned on under the control of the lamp power source control unit 154, the shutter switching control unit 155 controls the shutter 115 to pass the exposure light. The exposure light passing through the shutter 115 is sequentially reflected by the second mirror 117, the collimator lens 118, and the plane mirror 121 of the mirror unit 120, and is irradiated to the mask 140 held by the mask holder 141. The surface of the substrate 1 which is sandwiched by the substrate holder 135 is formed by the exposure light of the light-shielding pattern formed in the mask 140 by the exposure light irradiated to the mask 140. The coated resist is exposed to a resist that is directly under the mask 140.

將抗蝕劑曝光特定時間後,快門切換控制部155控制快門115而將曝光光線遮光。在曝光光線由快門115遮光之狀態下,光罩140以未圖示之驅動機構驅動上升。接著,載台控制部151驅動、控制X載台131(或Y載台132),以使基板1上之下一曝光區域位於光罩140正下方之方式移動基板1。在下一曝光區域位於光罩140之正下方之狀態下,光罩140由未圖示之驅動機構驅動並下降,在與基板1之下一曝光區域之間形成特定間隙。 After exposing the resist for a specific time, the shutter switching control unit 155 controls the shutter 115 to shield the exposure light. In a state where the exposure light is blocked by the shutter 115, the photomask 140 is driven to rise by a drive mechanism (not shown). Next, the stage control unit 151 drives and controls the X stage 131 (or the Y stage 132) to move the substrate 1 such that the lower exposure region on the substrate 1 is positioned directly below the mask 140. In a state where the next exposure region is located directly under the reticle 140, the reticle 140 is driven and lowered by a driving mechanism (not shown) to form a specific gap with an exposure region below the substrate 1.

如此,在基板1之新曝光區域位於光罩140正下方之狀態下,快門切換控制部155再次控制快門115使曝光光線穿 透,使穿透之曝光光線照射於光罩140,而曝光位於光罩140正下方之塗布於基板1表面之抗蝕劑。 Thus, in a state where the new exposure region of the substrate 1 is located directly under the reticle 140, the shutter switching control portion 155 controls the shutter 115 again to expose the exposure light. Through, the penetrating exposure light is irradiated onto the reticle 140, and the resist applied on the surface of the substrate 1 directly under the reticle 140 is exposed.

如此,藉由重複進行利用快門115切換曝光光線之遮光與穿透(開與關)與利用載台控制部151移動各載台,而曝光基板1之全面。 In this manner, by repeating the shading and the penetration (opening and closing) of the exposure light by the shutter 115 and the movement of each stage by the stage control unit 151, the entire substrate 1 is exposed.

以如上述之構成進行基板1全面之曝光之曝光裝置中,為遍及基板1全面均一地實現高精度之圖案曝光,需要使基板1之曝光面上之曝光光線之中心光線角度成為大致垂直、且照度分佈均一。以下針對控制曝光光線之中心光線角度及照度分佈之方法與其手法進行說明。 In the exposure apparatus which performs the full exposure of the substrate 1 as described above, in order to achieve high-precision pattern exposure uniformly over the substrate 1, it is necessary to make the central ray angle of the exposure light on the exposure surface of the substrate 1 substantially vertical and The illuminance distribution is uniform. The following is a description of the method of controlling the central ray angle and illuminance distribution of the exposure light and its method.

此處,為簡化說明,如圖3將圖1所示之曝光光學系統110之光源部113至基板1之光徑簡化顯示。圖3所示之構成中,針對使反射鏡單元120之平面鏡121之形狀最佳化,算出滿足目標之中心光線角度、照度分佈之各平面鏡121之最佳條件,向實際光學系統反饋之方法進行說明。 Here, for simplification of explanation, the light path of the light source portion 113 of the exposure optical system 110 shown in FIG. 1 to the substrate 1 is simplified as shown in FIG. In the configuration shown in FIG. 3, the shape of the plane mirror 121 of the mirror unit 120 is optimized, and the optimum conditions of the plane mirrors 121 satisfying the target central ray angle and the illuminance distribution are calculated, and the method of feeding back to the actual optical system is performed. Description.

圖3所示之構成中,300係針孔相機,310係搭載有模擬器之PC。針孔相機300以其上表面與曝光時之基板1之曝光面之位置11一致之方式,由載台單元130調整高度與位置。 In the configuration shown in Fig. 3, a 300-series pinhole camera and a 310-series PC equipped with a simulator. The pinhole camera 300 adjusts the height and position by the stage unit 130 such that the upper surface thereof coincides with the position 11 of the exposure surface of the substrate 1 during exposure.

如圖4所示,針孔相機300安裝有於框體301之上表面設有針孔302之針孔板303。在框體301內部且針孔302之正下方安裝有目視刻度導桿304,以CCD相機305拍攝穿透目視刻度導桿304與投影於目視刻度導桿304上之針孔302之光之投影像。 As shown in FIG. 4, the pinhole camera 300 is mounted with a pinhole plate 303 having a pinhole 302 provided on the upper surface of the frame 301. A visual scale guide 304 is mounted inside the frame 301 and directly below the pinhole 302, and the projection image of the light penetrating the visual scale guide 304 and the pinhole 302 projected on the visual scale guide 304 is captured by the CCD camera 305. .

接著,使用圖5說明使用以針孔相機300拍攝之圖像而嚴密控制基板1之曝光面上之中心光線角度、照度分佈之順序。 Next, the order of the central ray angle and the illuminance distribution on the exposure surface of the substrate 1 using the image taken by the pinhole camera 300 will be described with reference to FIG.

首先,在以使如圖4所示之針孔相機300之針孔302如圖3所示與曝光時之基板1之曝光面之位置11一致之方式,經載台單元130調整高度與位置之狀態下,使用該針孔相機300實測到達曝光面上之光線之中心光線角度(S501)。該針孔相機300中,從針孔302至目視刻度導桿304之距離以L1配置,從目視刻度導桿304至相機305之距離以L2配置。如圖3所示之構成下,從光源113發射之曝光光線到達曝光面位置11,其一部分通過針孔302,通過針孔302之光投影於配置在針孔302之正下方L1之距離之位置之目視刻度導桿304上。同時以CCD相機305拍攝通過該針孔之曝光光線之投影像與目視刻度導桿304,而取得圖像(S501)。 First, in order to make the pinhole 302 of the pinhole camera 300 shown in FIG. 4 coincide with the position 11 of the exposure surface of the substrate 1 during exposure as shown in FIG. 3, the height and position are adjusted via the stage unit 130. In the state, the pinhole camera 300 is used to measure the center ray angle of the light reaching the exposure surface (S501). In the pinhole camera 300, the distance from the pinhole 302 to the visual scale guide 304 is arranged at L1, and the distance from the visual scale guide 304 to the camera 305 is arranged at L2. As shown in FIG. 3, the exposure light emitted from the light source 113 reaches the exposure surface position 11, a portion of which passes through the pinhole 302, and the light passing through the pinhole 302 is projected at a position disposed at a distance L1 directly below the pinhole 302. The visual guide rod 304 is visually viewed. At the same time, the CCD camera 305 captures the projection image of the exposure light passing through the pinhole and the visual scale guide 304 to obtain an image (S501).

圖6所示之取得圖像60中包含多數個點狀之像62與目視刻度導桿之像61。多數個點狀之像62由相當於構成第一蠅眼透鏡1611之透鏡個數之聚光點(圖6之情形中為10×10行)構成。 The acquired image 60 shown in Fig. 6 includes a plurality of dot-like images 62 and an image 61 of a visual scale guide. The plurality of dot-like images 62 are composed of converging points corresponding to the number of lenses constituting the first fly's eye lens 1611 (10 × 10 lines in the case of Fig. 6).

由上述取得圖像60算出目視刻度導桿之像61之中心位置53與多數個點狀之像62之中心位置54之X方向之偏差量D1、Y方向之偏差量D2,由tan-1(D2/D1)決定中心光線角度。 From the acquired image 60, the deviation amount D2 between the center position 53 of the image 61 of the visual scale guide and the X direction of the center position 54 of the plurality of dot images 62 is calculated by tan -1 ( D2/D1) determines the center ray angle.

使用上述說明之方法,使搭載有針孔相機300之載台300每次移動一定間距(例如相當於配置於圖2B所示之模擬器 120之平面鏡121之背面之多數個致動器122之間隔之距離),在各位置上重複以針孔相機300拍攝,以矩陣狀測量相當於使用光罩140之利用1次曝光之曝光面之區域(曝光區域)內之中心光線光度,由該結果作成如圖7中顯示為70之中心光線角度分佈。 Using the method described above, the stage 300 on which the pinhole camera 300 is mounted is moved by a certain pitch each time (for example, corresponding to the simulator shown in FIG. 2B) The distance between the plurality of actuators 122 on the back surface of the plane mirror 121 of 120 is repeatedly photographed by the pinhole camera 300 at each position, and the exposure surface corresponding to the use of the photomask 140 using one exposure is measured in a matrix. The central ray illuminance in the region (exposure region) is made from the result as a central ray angle distribution as shown in FIG.

接著,使用由在上述曝光區域中以矩陣狀測量之中心光線角度之實測值,使用搭載於PC310之模擬器算出平面鏡121之形狀(S502)。 Next, using the actual measured value of the central ray angle measured in a matrix in the above-described exposure region, the shape of the plane mirror 121 is calculated using the simulator mounted on the PC 310 (S502).

平面鏡形狀算出方法係將曝光面上之中心光線角度之各測量位置之值作為輸入值,將模擬器上之光學系統之平面鏡模型建立時所應用之例如XY多項式平面係數(X、Y、X2、XY、Y2、X3、X2Y、XY2、Y3)作為變數值,以成為對應於上述輸入值之形狀之方式,利用模擬實施平面鏡最佳化。基於由該結果所得之係數算出平面鏡121之形狀。 The plane mirror shape calculation method takes the value of each measurement position of the central ray angle on the exposure surface as an input value, and applies, for example, an XY polynomial plane coefficient (X, Y, X 2) when the plane mirror model of the optical system on the simulator is established. XY, Y 2 , X 3 , X 2 Y, XY 2 , and Y 3 ) are used as the variable values, and the plane mirror is optimized by simulation so as to correspond to the shape of the input value. The shape of the plane mirror 121 is calculated based on the coefficient obtained from the result.

最佳化方法係為求得目標值,而求得作為初始條件設定之中心光線角度(例如0°)、與使上述XY多項式之變數變化而使初始值稍變化之情形之中心光線角度之變化率,由該等值藉由最小平方法或阻尼最小平方法而獲得最佳解者。下述(數1)顯示XY多項式之詳情。 The optimization method is to obtain a target value, and obtain a central ray angle (for example, 0°) set as an initial condition, and a change in a central ray angle in a case where the XY polynomial variable is changed to slightly change the initial value. Rate, from which the best solution is obtained by the least squares method or the damped least squares method. The following (number 1) shows the details of the XY polynomial.

此處,z:平面鏡彎曲量,c:平面鏡曲率,k:二次曲線常數,cj:xy之係數,r:(x2+y2)1/2,nt:多項式項數 Here, z: plane mirror bending amount, c: plane mirror curvature, k: quadratic constant, c j : xy coefficient, r: (x 2 + y 2 ) 1/2 , n t : polynomial term

算出平面鏡121之實際形狀後,為使中心光線角度到達 目標值0.25°,利用模擬以使曝光面上之光線之入射角度接近0°之方式將平面鏡最佳化(S503)。例如假設實測之中心光線角度在0°~0.6°範圍內具有分佈(圖7之區域71(中心光線角度0°~0.2°)、區域72(中心光線角度0.2°~0.4°)、區域73(中心光線角度0.4°~0.6°))。將該值作為輸入值,以搭載於PC310之模擬器,將光線之中心光線角度之目標值設定為0°,將應用於平面鏡之XY多項式之係數(X、Y、X2、XY、Y2、X3、X2Y、XY2、Y3)作為變數,以中心光線角度落入上述目標值之方式,藉由模擬實施平面鏡最佳化。 After calculating the actual shape of the plane mirror 121, in order to make the center ray angle reach the target value of 0.25°, the plane mirror is optimized by the simulation so that the incident angle of the light on the exposure surface approaches 0° (S503). For example, suppose the measured central ray angle has a distribution in the range of 0°~0.6° (region 71 of Figure 7 (center ray angle 0°~0.2°), area 72 (center ray angle 0.2°~0.4°), area 73 ( The center light angle is 0.4°~0.6°)). This value is used as an input value to be mounted on the simulator of PC310, and the target value of the center ray angle of the ray is set to 0°, which is applied to the coefficient of the XY polynomial of the plane mirror (X, Y, X 2 , XY, Y 2 , X 3 , X 2 Y, XY 2 , and Y 3 ) are used as variables, and the plane mirror is optimized by simulation in such a manner that the central ray angle falls within the above target value.

接著,基於上述最佳化結果將平面鏡121變形之情形,建立照度分佈亦滿足目標值或反映平面鏡最佳化結果之模型,使用該模型藉由模擬算出曝光面上之照度分佈(S504),接著,確認所得之照度分佈是否滿足目標值±2.5%(S505)。 Then, based on the above-described optimization result, the plane mirror 121 is deformed, and a model in which the illuminance distribution also satisfies the target value or reflects the optimization result of the plane mirror is established, and the illuminance distribution on the exposure surface is calculated by using the model (S504), and then It is confirmed whether the obtained illuminance distribution satisfies the target value ± 2.5% (S505).

若步驟S505中判斷由模擬所得之照度分佈未達到目標值(NO)之情形時,以使照度分佈成為均一之方式,在中心光線角度不偏離目標值之容許範圍內,改變光線之中心光線角度(S506),返回S504,藉由模擬算出曝光面上之照度分佈,再次向S506進展,重複確認所得之照度分佈是否滿足目標值±2.5%以下。 If it is determined in step S505 that the illuminance distribution obtained by the simulation does not reach the target value (NO), the illuminance distribution is made uniform, and the central ray angle of the ray is changed within a tolerance range in which the central ray angle does not deviate from the target value. (S506), the process returns to S504, and the illuminance distribution on the exposure surface is calculated by simulation, and the process proceeds to S506 again, and it is repeatedly confirmed whether or not the obtained illuminance distribution satisfies the target value of ±2.5% or less.

作為用以使照度分佈滿足目標值之平面鏡之形狀之修正方法,具體言之,如圖8所示之照度分佈圖中,當有照度分佈為±3%、即超過目標值(±2.5%)之區域80之情形,以使 到達該部分之光線之方向隨機之方式,重新計算平面鏡之XY多項式之係數。 As a method of correcting the shape of the plane mirror for making the illuminance distribution satisfy the target value, specifically, in the illuminance distribution diagram shown in FIG. 8, when the illuminance distribution is ±3%, that is, exceeding the target value (±2.5%) The situation of area 80 so that The direction of the ray polynomial of the plane mirror is recalculated in such a way that the direction of the light reaching the part is random.

在S505中確認照度分佈滿足目標值之情形時(YES),為重現所得之平面鏡之最佳化形狀,而利用由上述重新計算而得之、利用模擬算出之平面鏡之形狀與實際之平面鏡形狀121之形狀之差分,藉由該差分而決定設於平面鏡背面之致動器之各位置之修正量(最大3 mm)(S507),將該決定之致動器之修正量資訊向控制/驅動單元150之反射鏡單元控制部156發送,基於以反射鏡單元控制部156接收之致動器之修正量之資訊而移動反射鏡單元120之平面鏡121之調整機構即致動器122,從而反饋並調整(S508)。 When it is confirmed in S505 that the illuminance distribution satisfies the target value (YES), in order to reproduce the optimized shape of the obtained plane mirror, the shape of the plane mirror calculated by the above recalculation and the actual plane mirror shape is obtained by the above recalculation. The difference of the shape of 121, the correction amount (maximum 3 mm) of each position of the actuator provided on the back surface of the plane mirror is determined by the difference (S507), and the correction amount information of the determined actuator is controlled/driven The mirror unit control unit 156 of the unit 150 transmits an actuator 122 that is an adjustment mechanism of the plane mirror 121 of the mirror unit 120 based on the information of the correction amount of the actuator received by the mirror unit control unit 156, thereby feeding back Adjustment (S508).

其後,使用針孔相機300實測曝光面11之曝光區域之中心光線角度(S509),確認曝光面之光線之中心光線角度是否達到目標值(S510),若達到目標值則反饋結束。若未達到目標值之情形,返回S503,將實測之平面鏡之中心光線角度之結果反映於模擬模型,再次藉由模擬實施S504至S509,重複直至實測值滿足目標值為止,在實測值滿足目標值之時間點結束。 Thereafter, the center ray angle of the exposure area of the exposure surface 11 is actually measured using the pinhole camera 300 (S509), and it is confirmed whether or not the center ray angle of the light of the exposure surface reaches the target value (S510), and if the target value is reached, the feedback ends. If the target value is not reached, the process returns to S503, and the result of the measured central ray angle of the plane mirror is reflected in the simulation model, and is again performed by simulation S504 to S509, until the measured value satisfies the target value, and the measured value satisfies the target value. The time is over.

藉由該等上述順序,進行將塗布於基板1表面之抗蝕劑曝光之圖案形狀之修正。 By the above-described order, the correction of the pattern shape of exposing the resist applied to the surface of the substrate 1 is performed.

又,向控制/驅動部150之反射鏡單元控制部156發送之致動器122之修正量之資訊被記憶保持於反射鏡單元控制部156。藉此,即使一度切斷曝光裝置100之電源而再次連接電源之情形時,反射鏡單元控制部156亦可使用所記憶 保持之致動器之修正量之資訊控制反射鏡單元120之各致動器122,而使平面鏡121重現切斷電源前之狀態。 Further, information on the correction amount of the actuator 122 transmitted to the mirror unit control unit 156 of the control/drive unit 150 is stored and held in the mirror unit control unit 156. Thereby, even if the power of the exposure apparatus 100 is once turned off and the power is again connected, the mirror unit control unit 156 can use the memory. The information of the amount of correction of the actuator is controlled to control the actuators 122 of the mirror unit 120, and the plane mirror 121 is reproduced in a state before the power is turned off.

如此使用中心光線角度與照度分佈經調整之曝光光學系統,在塗布於基板1表面之抗蝕劑上曝光形成於光罩140之圖案,藉此可高精度地遍及基板全面實現均一之圖案曝光。 By using the exposure optical system whose center light angle and illumination distribution are adjusted, the pattern formed on the surface of the substrate 1 is exposed to the resist 140, whereby uniform pattern exposure can be achieved over the entire substrate with high precision.

使用上述說明之針孔相機之曝光光線之中心光線角度與照度分佈之調整,係在以曝光裝置於實際之基板上開始曝光前進行,但亦可以曝光裝置每次曝光一定片數之基板而定期實施,或亦可進行光學系統之調整、零件交換後進行。 The adjustment of the central ray angle and the illuminance distribution of the exposure light using the pinhole camera described above is performed before the exposure is started on the actual substrate by the exposure device, but the exposure device may be exposed to a predetermined number of substrates at a time. It can be carried out or adjusted after the optical system is adjusted and parts exchanged.

以上基於實施例具體說明藉由本發明者完成之發明,但本發明不限於前述實施例,在不脫離其要旨之範圍內當可進行各種變更。即,以具有與其等價功能之步驟或機構置換上述實施例所說明之構成(步驟)之一部分者,或省略實質上無功能之一部分者亦包含在本發明內。 The invention is not limited to the foregoing embodiments, and various modifications can be made without departing from the spirit and scope of the invention. That is, the replacement of one of the components (steps) described in the above embodiments with the steps or mechanisms having the equivalent functions, or the omission of one of the substantially non-functional portions is also included in the present invention.

1‧‧‧試料(基板) 1‧‧‧ samples (substrate)

11‧‧‧位置 11‧‧‧ position

53‧‧‧中心位置 53‧‧‧ central location

54‧‧‧中心位置 54‧‧‧central location

60‧‧‧圖像 60‧‧‧ images

61‧‧‧像 61‧‧‧like

62‧‧‧像 62‧‧‧ like

70‧‧‧中心光線角度分佈 70‧‧‧Center light angle distribution

71‧‧‧區域 71‧‧‧Area

72‧‧‧區域 72‧‧‧ Area

73‧‧‧區域 73‧‧‧Area

80‧‧‧區域 80‧‧‧ area

100‧‧‧曝光裝置 100‧‧‧Exposure device

101‧‧‧框體 101‧‧‧ frame

102‧‧‧排氣口 102‧‧‧Exhaust port

110‧‧‧曝光光學系統單元 110‧‧‧Exposure optical system unit

111‧‧‧燈 111‧‧‧ lights

112‧‧‧橢圓鏡 112‧‧‧Elliptical mirror

113‧‧‧光源 113‧‧‧Light source

114‧‧‧第1反射鏡 114‧‧‧1st mirror

115‧‧‧快門 115‧‧ ‧Shutter

116‧‧‧光積分器 116‧‧‧Light integrator

117‧‧‧第2反射鏡 117‧‧‧2nd mirror

118‧‧‧準直鏡 118‧‧‧ collimation mirror

120‧‧‧反射鏡單元 120‧‧‧Mirror unit

121‧‧‧平面鏡 121‧‧‧Flat mirror

122‧‧‧致動器 122‧‧‧Actuator

123‧‧‧致動器驅動部 123‧‧‧Acoustic drive unit

130‧‧‧載台單元 130‧‧‧stage unit

131‧‧‧X載台 131‧‧‧X stage

132‧‧‧Y載台 132‧‧‧Y stage

133‧‧‧Z載台 133‧‧‧Z stage

134‧‧‧θ載台 134‧‧‧θ stage

135‧‧‧夾具 135‧‧‧ fixture

140‧‧‧光罩 140‧‧‧Photomask

141‧‧‧光罩保持件 141‧‧‧Photomask holder

150‧‧‧控制.驅動單元 150‧‧‧ Control Drive unit

151‧‧‧載台控制部 151‧‧‧Station Control Department

152‧‧‧基板夾具控制部 152‧‧‧Substrate Fixture Control Department

153‧‧‧光罩保持件驅動部 153‧‧‧Photomask holder drive unit

154‧‧‧燈電源控制部 154‧‧‧Light Power Control Department

155‧‧‧快門切換控制部 155‧‧ ‧Shutter Switch Control Department

156‧‧‧反射鏡單元控制部 156‧‧‧Mirror unit control unit

157‧‧‧全體控制部 157‧‧‧All Control Department

161‧‧‧蠅眼透鏡 161‧‧‧Flying eye lens

300‧‧‧針孔相機 300‧‧‧ pinhole camera

301‧‧‧框體 301‧‧‧ frame

302‧‧‧針孔 302‧‧‧ pinhole

303‧‧‧針孔板 303‧‧‧ pinhole plate

304‧‧‧目視刻度導桿 304‧‧‧Visual scale guide

305‧‧‧CCD相機 305‧‧‧CCD camera

310‧‧‧PC 310‧‧‧PC

1141‧‧‧玻璃基板 1141‧‧‧ glass substrate

1142‧‧‧黑矩陣 1142‧‧‧Black matrix

1143‧‧‧三原色圖案 1143‧‧‧ three primary color patterns

1144‧‧‧三原色圖案 1144‧‧‧ three primary color patterns

1145‧‧‧三原色圖案 1145‧‧‧ three primary color patterns

1146‧‧‧ITO膜 1146‧‧‧ITO film

1161‧‧‧第1蠅眼透鏡 1161‧‧‧1st fly eye lens

1162‧‧‧第2蠅眼透鏡 1162‧‧‧2nd fly eye lens

1611‧‧‧第1蠅眼透鏡 1611‧‧‧1st fly eye lens

1612‧‧‧第2蠅眼透鏡 1612‧‧‧2nd fly eye lens

D1‧‧‧X方向之偏差量 Deviation in the direction of D1‧‧‧X

D2‧‧‧Y方向之偏差量 Deviation in the direction of D2‧‧‧Y

圖1係顯示利用本發明之一實施形態之曝光裝置之概要構成之方塊圖。 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a block diagram showing a schematic configuration of an exposure apparatus according to an embodiment of the present invention.

圖2A係反射鏡單元120之側視圖。 2A is a side view of the mirror unit 120.

圖2B係反射鏡單元120之C-C'剖面箭視圖。 2B is a cross-sectional view of the C-C' section of the mirror unit 120.

圖3係將用以測量近接方式之光學系統之中心光線角度之構成簡化顯示之圖。 Fig. 3 is a view showing a simplified display of the configuration of the central ray angle of the optical system for measuring the proximity mode.

圖4係顯示算出曝光面上之光線之中心光線角度時使用 之針孔相機之概要構成之正面剖面圖。 Figure 4 shows the use of the center ray angle of the light on the exposure surface. A schematic cross-sectional view of the outline of a pinhole camera.

圖5係顯示測量並調整近接方式之光學系統之中心光線角度,用以獲得均一照度分佈之處理流程之流程圖。 Figure 5 is a flow chart showing the process flow for measuring and adjusting the center ray angle of the optical system in the proximity mode for obtaining a uniform illuminance distribution.

圖6係顯示從攝像穿透投影於目視刻度導桿上之針孔之光像所得之針孔相機算出近接方式之光學系統之中心光線角度之方法之針孔相機所攝像之圖像。 Fig. 6 is a view showing an image taken by a pinhole camera for calculating a central ray angle of an optical system of a proximity mode from a pinhole camera obtained by imaging a light image of a pinhole projected on a visual scale guide.

圖7係顯示以針孔相機實測之曝光面上之光線之入射角度分佈之分佈圖。 Fig. 7 is a graph showing the distribution of the incident angle distribution of the light on the exposure surface actually measured by the pinhole camera.

圖8係顯示由模擬算出之曝光面上之照度分佈之分佈圖。 Fig. 8 is a graph showing the distribution of the illuminance distribution on the exposure surface calculated by the simulation.

圖9係顯示液晶顯示器之製造步驟流程之一例之圖。 Fig. 9 is a view showing an example of a flow of a manufacturing process of a liquid crystal display.

圖10係顯示液晶顯示器之彩色濾光片製造步驟流程之一例之圖。 Fig. 10 is a view showing an example of a flow of a color filter manufacturing step of a liquid crystal display.

圖11係顯示液晶顯示器之彩色濾光片之結構之一例之圖。 Fig. 11 is a view showing an example of the structure of a color filter of a liquid crystal display.

11‧‧‧位置 11‧‧‧ position

113‧‧‧光源 113‧‧‧Light source

118‧‧‧準直鏡 118‧‧‧ collimation mirror

120‧‧‧反射鏡單元 120‧‧‧Mirror unit

121‧‧‧平面鏡 121‧‧‧Flat mirror

122‧‧‧致動器 122‧‧‧Actuator

123‧‧‧致動器驅動部 123‧‧‧Acoustic drive unit

130‧‧‧載台單元 130‧‧‧stage unit

156‧‧‧反射鏡單元控制部 156‧‧‧Mirror unit control unit

161‧‧‧蠅眼透鏡 161‧‧‧Flying eye lens

300‧‧‧針孔相機 300‧‧‧ pinhole camera

310‧‧‧PC 310‧‧‧PC

1611‧‧‧第1蠅眼透鏡 1611‧‧‧1st fly eye lens

1612‧‧‧第2蠅眼透鏡 1612‧‧‧2nd fly eye lens

Claims (12)

一種曝光裝置,其特徵在於具備:包含發射曝光光線之光源的曝光光學機構;保持光罩之光罩保持件機構;載置基板並可在平面內移動之載台機構;控制前述曝光光學機構與前述載台機構,並依次曝光載置於前述載台機構之基板上之控制機構,且前述曝光光學機構具備:光積分器,其將從前述光源發射之曝光光線轉換成多數個點光源;準直鏡,其將穿透前述光積分器之曝光光線轉換成平行光;及反射鏡單元,其將以該準直鏡轉換成平行光之曝光光線以平面鏡反射,而對保持於前述光罩保持件之光罩照射;該反射鏡單元裝備排列成2維狀之推壓前述平面鏡之與反射前述曝光光線之面成相反側之面之致動器;前述控制機構基於從對相當於載置於前述載台機構之基板表面之位置照射之前述曝光光線而得之前述光積分器之點光源之相關資訊,控制排列成2維狀之各致動器。 An exposure apparatus comprising: an exposure optical mechanism including a light source that emits exposure light; a mask holder mechanism that holds the mask; a stage mechanism that mounts the substrate and is movable in a plane; and controls the exposure optical mechanism and The stage mechanism sequentially exposes a control mechanism mounted on the substrate of the stage mechanism, and the exposure optical mechanism includes: an optical integrator that converts the exposure light emitted from the light source into a plurality of point light sources; a straight mirror that converts exposure light that penetrates the optical integrator into parallel light; and a mirror unit that converts the exposure light converted into parallel light by the collimating mirror to a plane mirror, while remaining in the reticle Irradiating the reticle; the mirror unit is equipped with an actuator arranged in a two-dimensional shape to push the surface of the plane mirror opposite to the surface reflecting the exposure light; the control mechanism is based on the equivalent of the pair The information about the point light source of the optical integrator obtained by irradiating the exposure light to the position of the substrate surface of the stage mechanism is controlled to be arranged in two dimensions. The actuators. 如請求項1之曝光裝置,其中前述光積分器以複數個蠅眼透鏡構成,自前述曝光光線而得之前述光積分器之點光源之相關資訊,係藉由前述複數個蠅眼透鏡中最靠近前述光源之蠅眼透鏡所形成之點光源之資訊。 The exposure device of claim 1, wherein the optical integrator is composed of a plurality of fly-eye lenses, and the information about the point source of the optical integrator obtained from the exposure light is obtained by the plurality of fly-eye lenses. Information about the point source formed by the fly's eye lens of the aforementioned light source. 如請求項1之曝光裝置,其中前述控制機構係基於使用前述光積分器之點光源之相關資訊算出之前述反射鏡單元之 2維排列之各致動器之驅動量資訊而控制該致動器。 The exposure apparatus of claim 1, wherein the control means calculates the mirror unit based on information related to a point light source using the optical integrator The actuator is controlled by information on the driving amount of each actuator arranged in two dimensions. 如請求項1至3中任一項之曝光裝置,其中自前述曝光光線而得之前述光積分器之點光源之相關資訊,係自該點光源之光入射至與前述基板表面對應位置之入射角之資訊、與前述點光源之照度分佈之資訊。 The exposure apparatus according to any one of claims 1 to 3, wherein the information about the point light source of the optical integrator obtained from the exposure light is incident from the light of the point source to the position corresponding to the surface of the substrate The information of the angle and the information of the illumination distribution of the aforementioned point source. 如請求項1至3中任一項之曝光裝置,其中自前述曝光光線而得之前述光積分器之點光源之相關資訊,係藉由將在相當於載置於前述載台機構之基板表面之位置設有針孔之針孔相機所拍攝而得之前述曝光光線之圖像進行處理而得之資訊。 The exposure apparatus according to any one of claims 1 to 3, wherein the information about the point source of the optical integrator obtained from the exposure light is obtained by the surface of the substrate placed on the stage mechanism The position is obtained by processing the image of the exposure light taken by the pinhole camera of the pinhole. 如請求項5之曝光裝置,其中自前述曝光光線而得之前述光積分器之點光源之相關資訊,係藉由將使前述針孔相機於前述曝光光線所照射之區域內依次移動而取得之前述曝光光線之圖像進行處理而得之資訊。 The exposure device of claim 5, wherein the information about the point source of the optical integrator obtained from the exposure light is obtained by sequentially moving the pinhole camera in an area irradiated by the exposure light. The image obtained by processing the image of the exposure light. 一種曝光方法,其係遍及前述基板之全面重複將從光源發射之曝光光線經由光學系統照射於形成有穿透光之圖案之光罩上,且將照射於該光罩之曝光光線中穿透前述圖案之曝光光線投射於塗布在與前述光罩近接配置之基板之第1區域上之抗蝕劑上而曝光該抗蝕劑,藉此以形成於前述光罩之圖案而曝光前述基板之正面之方法,且以如下方式將前述曝光光線照射於前述光罩:使自前述光源發射之曝光光線穿透光積分器而轉換成複數個點光源,將穿透該光積分器而經轉換成複數個點光源之曝光光線以準直鏡轉換成平行光,將經轉換成該平行光之 曝光光線以於背面裝備排列成2維狀之致動器之平面鏡反射並照射於前述光罩;基於自照射於相當於前述曝光之基板表面之位置之前述曝光光線而得之前述光積分器之點光源之相關資訊,控制於前述平面鏡之背面排列成2維狀之致動器。 An exposure method for uniformly exposing exposure light emitted from a light source to a reticle formed with a pattern of penetrating light through an optical system throughout the substrate, and penetrating the exposure light irradiated to the reticle The exposure light of the pattern is projected onto the resist applied to the first region of the substrate disposed adjacent to the mask to expose the resist, thereby exposing the front surface of the substrate by forming a pattern of the mask The method, and irradiating the exposure light to the reticle in such a manner that the exposure light emitted from the light source is transmitted through the optical integrator to be converted into a plurality of point light sources, which are transmitted through the optical integrator and converted into a plurality of The exposure light of the point source is converted into parallel light by a collimating mirror, and converted into the parallel light. The exposure light is reflected by the plane mirror of the actuator arranged in a two-dimensional shape on the back surface and irradiated to the reticle; and the optical integrator is obtained based on the exposure light irradiated from a position corresponding to the surface of the exposed substrate The information about the point source is controlled by an actuator arranged in a two-dimensional shape on the back surface of the plane mirror. 如請求項7之曝光方法,其中前述光積分器以複數個蠅眼透鏡構成,自前述曝光光線而得之前述光積分器之點光源之相關資訊,係藉由前述複數個蠅眼透鏡中最靠近前述光源之蠅眼透鏡所形成之點光源之資訊。 The exposure method of claim 7, wherein the optical integrator is composed of a plurality of fly-eye lenses, and the information about the point source of the optical integrator obtained from the exposure light is obtained by the plurality of fly-eye lenses. Information about the point source formed by the fly's eye lens of the aforementioned light source. 如請求項7之曝光方法,其係基於使用前述光積分器之點光源之相關資訊算出之前述各致動器之驅動量,而控制前述排列成2維狀之致動器。 The exposure method of claim 7, wherein the actuators arranged in a two-dimensional shape are controlled based on the driving amount of each of the actuators calculated using information on the point light source of the optical integrator. 如請求項7至9中任一項之曝光方法,其中自前述曝光光線而得之前述光積分器之點光源之相關資訊,係來自該點光源之光入射至相當於前述曝光之基板表面之位置之入射角之資訊、與前述點光源之照度分佈之資訊。 The exposure method according to any one of claims 7 to 9, wherein the information about the point source of the optical integrator obtained from the exposure light is that light from the point source is incident on a surface of the substrate corresponding to the exposure. Information on the incident angle of the position and information on the illuminance distribution of the point source. 如請求項7至9中任一項之曝光方法,其中自前述曝光光線而得之前述光積分器之點光源之相關資訊,係藉由將在相當於前述曝光之基板表面之位置設有針孔之針孔相機所拍攝而得之前述曝光光線之圖像進行處理而得之資訊。 The exposure method according to any one of claims 7 to 9, wherein the information about the point source of the optical integrator obtained from the exposure light is provided by providing a needle at a position corresponding to the surface of the exposed substrate The information obtained by processing the image of the aforementioned exposure light taken by the pinhole camera of the hole. 如請求項11之曝光方法,其中自前述曝光光線而得之前述光積分器之點光源之相關資訊,係藉由將使前述針孔相機於前述曝光光線所照射之區域內依次移動而得之前述曝光光線之圖像進行處理而得之資訊。 The exposure method of claim 11, wherein the information about the point source of the optical integrator obtained from the exposure light is obtained by sequentially moving the pinhole camera in an area irradiated by the exposure light. The image obtained by processing the image of the exposure light.
TW101117639A 2011-06-29 2012-05-17 Exposure method and device thereof TWI459155B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011143904A JP5554753B2 (en) 2011-06-29 2011-06-29 Exposure method and apparatus

Publications (2)

Publication Number Publication Date
TW201305740A true TW201305740A (en) 2013-02-01
TWI459155B TWI459155B (en) 2014-11-01

Family

ID=47401450

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101117639A TWI459155B (en) 2011-06-29 2012-05-17 Exposure method and device thereof

Country Status (4)

Country Link
JP (1) JP5554753B2 (en)
KR (1) KR101432888B1 (en)
CN (1) CN102854754B (en)
TW (1) TWI459155B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6574087B2 (en) * 2013-12-09 2019-09-11 株式会社ブイ・テクノロジー Exposure apparatus, exposure method, and reflecting mirror with mirror bending mechanism
KR102193996B1 (en) * 2014-01-28 2020-12-22 엘지전자 주식회사 Exposure apparatus and Exposure method using the same
JP6535197B2 (en) * 2014-04-28 2019-06-26 株式会社ブイ・テクノロジー Exposure apparatus and exposure method
US20210024196A1 (en) * 2019-07-25 2021-01-28 Gulfstream Aerospace Corporation Aircraft, interior panels for aircfraft, and methods for making interior panels

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04369209A (en) * 1991-06-17 1992-12-22 Nikon Corp Illumination apparatus for exposure use
JPH07201711A (en) * 1993-12-29 1995-08-04 Dainippon Screen Mfg Co Ltd Proximity aligner and its device
JPH10242018A (en) * 1997-02-21 1998-09-11 Mejiro Precision:Kk Exposure optical system
JPH1197343A (en) * 1997-09-24 1999-04-09 Canon Inc Exposing device
JP2004354909A (en) * 2003-05-30 2004-12-16 Orc Mfg Co Ltd Projection exposure apparatus and projection exposure method
JP2005183421A (en) * 2003-12-16 2005-07-07 Nikon Corp Illumination optical device, aligner, and exposing method
JP3972066B2 (en) * 2004-03-16 2007-09-05 大日精化工業株式会社 Light control type optical path switching type data distribution apparatus and distribution method
JP4475631B2 (en) * 2004-03-16 2010-06-09 大日本印刷株式会社 Proximity exposure apparatus and exposure method using this proximity exposure apparatus
JP2005345591A (en) * 2004-06-01 2005-12-15 Hitachi Displays Ltd Method for manufacturing display apparatus and apparatus thereof
CN100529970C (en) * 2006-04-26 2009-08-19 株式会社Orc制作所 Projection exposing device
CN1896875A (en) * 2006-06-02 2007-01-17 上海微电子装备有限公司 Photoetching equipment
JP2009095876A (en) * 2007-10-18 2009-05-07 Olympus Corp Laser machining apparatus, laser machining method, and laser machining program
KR101708943B1 (en) * 2007-11-06 2017-02-21 가부시키가이샤 니콘 Control device, exposure method, and exposure device
JP5473350B2 (en) * 2009-02-13 2014-04-16 キヤノン株式会社 Illumination optical system, exposure apparatus, and device manufacturing method
JP5499399B2 (en) * 2009-07-28 2014-05-21 Nskテクノロジー株式会社 Exposure apparatus and exposure method
JP5464991B2 (en) * 2009-12-07 2014-04-09 Nskテクノロジー株式会社 Proximity exposure apparatus and proximity exposure method
JP5465024B2 (en) * 2009-11-16 2014-04-09 Nskテクノロジー株式会社 Exposure apparatus and exposure method

Also Published As

Publication number Publication date
JP2013011715A (en) 2013-01-17
JP5554753B2 (en) 2014-07-23
CN102854754B (en) 2014-09-03
KR20130002954A (en) 2013-01-08
TWI459155B (en) 2014-11-01
KR101432888B1 (en) 2014-08-21
CN102854754A (en) 2013-01-02

Similar Documents

Publication Publication Date Title
JP5326259B2 (en) Illumination optical apparatus, exposure apparatus, and device manufacturing method
TWI471679B (en) Alterable slit device, lighting device, exposure device, exposure method and device manufacturing method
TWI443472B (en) Pattern forming method and apparatus, exposure method and apparatus, and component manufacturing method and element
WO2009008605A2 (en) Maskless exposure method
JP2004327660A (en) Scanning projection aligner, exposure method, and device manufacturing method
WO2009125554A1 (en) Exposure apparatus and electronic device manufacturing method
TWI459155B (en) Exposure method and device thereof
JP4366948B2 (en) Illumination optical apparatus, exposure apparatus, and exposure method
TW201335719A (en) Exposure apparatus and exposure method
TW201335722A (en) Exposure apparatus, exposure method, and fabricating method of display panel substrate
JP3200244B2 (en) Scanning exposure equipment
JP2007101592A (en) Scanning exposure apparatus and method for manufacturing microdevice
JP3689698B2 (en) Projection exposure apparatus, projection exposure method, and method of manufacturing exposed member
JP6519109B2 (en) Exposure method and apparatus, and device manufacturing method
US8293434B2 (en) Method for forming convex pattern, exposure apparatus and photomask
TW201335721A (en) Proximity exposure apparatus, exposure light forming method, and fabricating method of panel substrate
TWI414903B (en) Proximity exposure device, its exposure beam forming method and manufacturing method of a display panel substrate
JP2004266259A (en) Illumination optical device, exposure apparatus, and exposure method
JP2006134932A (en) Variable slit device, illumination optical device, aligner, and method of exposure
JP2009041956A (en) Pupil transmittance distribution measuring apparatus and method, projection exposure apparatus, and device manufacturing method
JP7060848B2 (en) Exposure device
JP2008139761A (en) Exposure method and exposure device
JP2006047881A (en) Aligner and method for manufacturing layered substrate
JP5066948B2 (en) Mask holding device, mask adjustment method, exposure apparatus and exposure method
JP4403871B2 (en) Optical surface evaluation method and optical member manufacturing method

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees