TW201335719A - Exposure apparatus and exposure method - Google Patents

Abstract

The invention provides an exposure apparatus, which can easily adjust the amount of light exposure every area set finer within a substrate plane, enhance the uniformity of a residual resist film subsequent to development, and suppress variations in line width of each wiring pattern and pitch therebetween. Due to the adoption of the exposure apparatus, a substrate (G) on a substrate bench (2) and a master (M) on a master bench (3) are in synchronous movement, so that patterns of the master are exposed onto the substrate. The exposure apparatus comprises a local exposure part (20) used for emitting light onto the local part of the substrate; and a control part (40) used for controlling the light emitting of the above local exposure part. The local exposure part comprise a plurality of light-emitting elements (L) linearly arranged on the substrate in the width direction to emit light onto the substrate; and a light-emitting driving part (25) used for selectively driving for light emission the light-emitting elements.

Description

Exposure device and exposure method

The present invention relates to an exposure apparatus and an exposure method for applying an exposure treatment to a substrate to be processed on which a photosensitive film is formed, and more particularly to an exposure apparatus and an exposure method capable of locally adjusting an exposure amount.

For example, in the manufacture of an FPD (Planar Display), a circuit pattern is formed by a so-called photolithography project.

In the photolithography project, as described in Patent Document 1, after forming a predetermined film on a substrate to be processed such as a glass substrate, a photoresist (hereinafter referred to as a resist) is applied, and the resist is used. The preliminary drying treatment (decompression drying and prebaking treatment) of the solvent evaporation forms a resist film (photosensitive film). Then, the resist film is exposed in response to the circuit pattern, and the developing process is performed to form a pattern.

However, for such a photolithography project, as shown in Fig. 15(a), the resist pattern R has different film thicknesses (thick film portion R1 and film portion R2), and is subjected to etching treatment for a plurality of times. This reduces the number of masks and the number of projects. Further, such a resist pattern R can be obtained by a half (halftone) exposure process using a halftone mask having a portion having a different light transmittance in one sheet.

The circuit pattern forming process when the resist pattern R for which the half exposure is applied is specifically described using Fig. 15 (a) to (e).

For example, in Fig. 15(a), on the glass substrate G, sequentially laminated a gate electrode 200, an insulating layer 201, a Si layer 202 composed of an a-Si layer (non-doped amorphous Si layer) 202a and an n+ a-Si layer 202b (doped phosphorus amorphous Si layer), A metal layer 203 for forming an electrode.

Further, after the resist film is formed on the metal layer 203, the solvent in the resist is evaporated by vacuum drying and prebaking treatment, and then the resist is formed by the above-described half exposure treatment and development treatment. Pattern R.

After the formation of the resist pattern R (the thick film portion R1 and the thin film portion R2), as shown in FIG. 15(b), the resist pattern R is used as a mask, and the metal layer 203 is etched. 1 etching).

Next, an ashing treatment is applied to the plasma in the entire resist pattern R. As a result, as shown in Fig. 15 (c), the resist pattern R3 whose film thickness is reduced by about half is obtained.

Then, as shown in FIG. 15(d), the resist pattern R3 is used as a photomask, and the exposed metal layer 203 or the Si layer 202 is etched (second etching). Finally, the resist R3 is removed as shown in Fig. 15(e) to obtain a circuit pattern.

However, as described above, for the half exposure treatment using the resist pattern R in which the thick film R1 and the film R2 are formed, when the resist pattern R is formed, the film thickness is uneven in the surface of the substrate, which is formed. The problem of the line width of the pattern or the deviation between the patterns.

That is, when specifically described using Figs. 16(a) to (e), Fig. 16(a) shows that the thickness t2 of the thin film portion R2 in the resist pattern R is formed as compared with Fig. 15(a). The case where the thickness t1 is thick is shown.

At this time, as in the case shown in Fig. 15, the metal film 203 is The etching (Fig. 16(b)) and the resist pattern R are all applied to the ashing treatment (Fig. 16(c)).

Here, as shown in Fig. 16(c), the resist pattern R3 whose film thickness is reduced to about half is obtained, but the thickness of the removed resist film is the same as that of Fig. 15(c). Therefore, the distance p2 between one of the resist patterns R3 is narrower than the distance p1 shown in Fig. 15(c).

Therefore, the circuit pattern obtained by etching the metal film 203 and the Si layer 202 from the state (the FIG. 16(d) and the resist pattern R3 (FIG. 16(e)) is obtained, and the pitch p2 is compared. The distance between p1 is narrower than that shown in Fig. 15(e) (the line width of the circuit pattern is widened).

In the above-mentioned problem, in the past, each mask pattern that transmits light during the exposure processing is used, and the thickness of the resist pattern R is determined by the thickness measurement to form a predetermined portion thicker than the expected value, thereby improving the exposure of the portion. The means of sensitivity.

In other words, in the prebaking treatment for heating the resist film before the exposure treatment to evaporate the solvent, the amount of heating in the surface of the substrate is varied, and the exposure sensitivity in the predetermined portion is changed to be adjusted (in-plane uniformity) The residual film thickness after the development treatment.

Specifically, the heater used in the prebaking process is divided into a plurality of regions, and the divided heaters are controlled by independent driving to adjust the temperature of each region.

Further, the heating temperature is adjusted by changing the height of the proximity pin of the support substrate (the distance between the heater and the substrate is changed).

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-158253

However, when the residual film thickness is adjusted by the heat treatment by the prebaking as described above, it is necessary to ensure a certain degree of size due to the area of the divided heater. The topic of heating adjustment of subdivided areas.

Furthermore, with regard to the heating adjustment by the height of the proximity pin, there is a problem in that the productivity is lowered because the number of work of the plug height needs to be changed.

The present invention has been made in view of the above problems of the prior art, and provides an exposure amount which can be easily adjusted in each region which is subdivided in the plane of the substrate, and can improve the uniformity of the residual film of the resist after the development process. An exposure apparatus and an exposure method for suppressing variations in line width and pitch of a wiring pattern.

In order to solve the above problems, an exposure apparatus according to the present invention is an exposure apparatus for exposing a circuit pattern to a substrate to be processed on which a photosensitive film is formed, and is characterized by comprising: an illumination optical system for forming a predetermined circuit The original irradiation light of the pattern and the partial exposure unit are different from the illumination optical system described above, and partially irradiate the substrate with the illumination, and the illumination optical system and the partial exposure unit are integrally provided inside the exposure device.

Further, the exposure apparatus described above includes: holding the substrate and a substrate platform movable in a scanning direction; a master platform capable of holding the original plate and movable in synchronization with the substrate platform; and a projection optical system for projecting a pattern of the original plate irradiated by the illumination optical system on the substrate The exposure apparatus exposes the pattern of the original plate on the substrate while moving the substrate on the substrate platform and the original plate on the original plate, and the partial exposure portion has a plurality of light-emitting elements arranged in a line shape. In the substrate width direction, the substrate that is moved by the substrate platform can be irradiated with light; and the light-emitting driving unit can selectively select one of the plurality of light-emitting elements or a plurality of light-emitting elements as a light-emitting control unit. In order to perform light emission driving, it is preferable that the partial exposure portion is provided above the substrate stage.

Further, the control unit includes a control unit that controls the light-emitting drive unit of the partial exposure unit, and the control unit controls the light-emitting drive unit to selectively emit light by using one of the plurality of light-emitting elements or the plurality of light-emitting elements as a light-emitting control unit. good.

Further, it is preferable that the partial exposure portion is disposed above the substrate to be processed that is moved by the substrate stage, and that the photosensitive film formed on the substrate to be processed is directly irradiated with light.

Alternatively, the partial exposure portion may be disposed above the original plate and irradiate the original plate, and the diffracted light transmitted through the original plate may be irradiated onto the photosensitive film formed on the substrate to be processed through the projection optical system. .

By configuring in this way, it is possible to easily perform partial exposure processing on any portion of the film thickness to be thinner (or to be thickened) by setting the exposure in advance. The amount (illuminance) can be reduced to the desired film thickness.

Therefore, even when the resist film holds different film thicknesses (thick film portion and film portion) in the half exposure process (that is, a film thickness as thin as the film portion), the hindrance after the development process can be made. The film thickness of the film is uniform, and variation in line width and pitch of the wiring pattern can be suppressed.

Further, the control unit controls the light-emitting drive unit to store the relationship between the illuminance irradiated onto the substrate and the drive current value of the light-emitting element as a correlation table, and to form a photosensitive film formed on the substrate. In the predetermined region, the required illuminance to be irradiated according to the film thickness is obtained, and the light-emitting element that can be irradiated to the predetermined region is determined from the required illuminance according to the correlation table, and the driving current value is determined by the driving current value. It is preferable that the above-mentioned light-emitting element emits light.

Further, the illuminance detecting means is provided at a position equal to the height of the substrate to be processed so as to be movable in the substrate width direction, and the illuminance of the light irradiated by the partial exposure portion is detected, and the control is performed. The relationship between the illuminance detected by the illuminance detecting means and the driving current value of the light-emitting element driven by the light is preferably maintained as the correlation table.

Furthermore, the control unit divides the plurality of light-emitting elements into a plurality of light-emitting control groups along the substrate width direction, and for each of the light-emitting control groups, a plurality of driving current values within a predetermined range and driving currents thereof The illuminance produced by the value is better than the above related table.

In this way, by using a correlation table indicating the relationship between the driving current value and the illuminance of the light-emitting element, the illuminance of the light-emitting element can be optimized. By.

In addition, the illuminance measurement means is used to measure the illuminance of all the light-emitting elements that are the light-emission control units, and the exposure amount can be accurately adjusted by recording the drive current value.

Furthermore, by dividing a plurality of light-emitting elements into a plurality of light-emission control groups, variations in illuminance between the light-emitting elements can be suppressed.

Alternatively, the control unit controls the light-emitting drive unit to increase or decrease the film thickness of the photosensitive region formed on the substrate to be processed and the film thickness by the development process. The relationship between the drive current values of the light-emitting elements irradiated in the predetermined area is stored in a correlation table, and the drive current value is determined from the film thickness variation value according to the correlation table, and the light-emitting element may be caused to emit light by the drive current value.

In this way, when the relevant information of the film thickness variation value and the driving current value is used, the illuminance can be omitted because the parameter can be omitted (that is, since the relevant data of the illuminance and the driving current value are not used), the illuminance can be omitted. Update operation of data related to the drive current value.

Further, a light diffusing plate is provided below the plurality of light emitting elements of the partial exposure portion, and light emitted from the light emitting device is preferably radiated to the substrate to be processed through the light diffusing plate.

In this way, by providing the light diffusing plate, the light radiated from the plurality of light-emitting elements is appropriately diffused by the light diffusing plate, so that the light of the adjacent light-emitting elements can be connected in a line shape and irradiated downward.

Furthermore, in order to solve the above problems, the exposure side related to the present invention An exposure apparatus for exposing a circuit pattern to a substrate to be processed on which a photosensitive film is formed, that is, an illumination optical system integrally provided with an original plate irradiated with a predetermined circuit pattern, and an illumination optical system The exposure apparatus for exposing the pattern of the original plate on the substrate in an exposure apparatus in which the substrate is partially irradiated with light, wherein the substrate and the original plate are simultaneously moved while the substrate is on the substrate The pattern of the original plate is exposed upward, and the substrate is locally irradiated with light by the partial exposure portion.

Further, the exposure apparatus includes: a substrate stage that holds the substrate and is movable in a scanning direction; a master plate that holds the original plate and that can move in synchronization with the substrate platform; and projection on the substrate by the illumination a projection optical system in which the optical system is irradiated with the pattern of the original plate, wherein the partial exposure portion is provided above the substrate stage, and in the partial exposure portion, a plurality of light-emitting elements arranged in a line width direction are arranged in a line shape; It is preferable that one or a plurality of light-emitting elements are selectively driven to emit light as a light-emitting control unit, and it is preferable that the substrate moved by the substrate platform is locally irradiated with light.

Further, it is preferable that the photosensitive film formed on the substrate to be processed is directly irradiated with light by the partial exposure portion.

Alternatively, even if the original plate is irradiated from above the original plate by the partial exposure portion, the diffracted light transmitted through the original plate may be irradiated onto the photosensitive film formed on the substrate to be processed by the projection optical system.

According to such a method, it is possible to easily perform local exposure processing on any portion of the film which is to be thinner (or thicker), by setting in advance The exposure amount (illuminance) can be reduced to the desired film thickness.

Therefore, even when the resist film holds different film thicknesses (thick film portion and film portion) in the half exposure process (that is, a film thickness as thin as the film portion), the hindrance after the development process can be made. The film thickness of the film is uniform, and variation in line width and pitch of the wiring pattern can be suppressed.

Further, the relationship between the illuminance irradiated onto the substrate and the driving current value of the light-emitting element is stored as a correlation table, and the film thickness is determined in a predetermined region of the photosensitive film formed on the substrate. The light-emitting element that can be irradiated to the predetermined area is used to determine the drive current value from the required illuminance based on the correlation table, and it is preferable that the light-emitting element emit light by the drive current value.

Further, the illuminance detecting means capable of moving forward and backward in the substrate width direction at the same height as the substrate to be processed is used to measure the illuminance of all the light-emitting elements in which the partial exposure portion is a light-emission control unit. It is preferable to maintain the relationship between the drive current value and the illuminance as the above correlation table.

Furthermore, the plurality of light-emitting elements are divided into a plurality of light-emitting control groups along the width direction of the substrate, and for each of the light-emitting control groups, a plurality of driving current values within a predetermined range and a driving current value thereof are generated. Illumination memory is better in the above related table.

In this way, by using a correlation table indicating the relationship between the driving current value of the light-emitting element and the illuminance, the illuminance of the light-emitting element can be made optimal.

Furthermore, it is recorded in the value of the relevant table, and the illuminance detection hand is used in advance. In the segment, the illuminance measurement is performed on all of the light-emitting elements that are the light-emission control unit, and by making the drive current value recorded, the exposure amount can be adjusted with high precision.

Furthermore, by dividing a plurality of light-emitting elements into a plurality of light-emission control groups, variations in illuminance between the light-emitting elements can be suppressed.

Or, even if the irradiation is performed on a predetermined region of the photosensitive film formed on the substrate to be processed, and the fluctuation value of the film thickness is increased or decreased by the development process, and the driving current of the light-emitting element irradiated by the predetermined region The relationship between the values is stored in the correlation table, and the drive current value is determined from the film thickness variation value based on the correlation table, and the light-emitting element may be caused to emit light by the drive current value.

In this way, when the relevant information of the film thickness variation value and the driving current value is used, the illuminance can be omitted because the parameter can be omitted (that is, since the relevant data of the illuminance and the driving current value are not used), the illuminance can be omitted. Update operation of data related to the drive current value.

Further, in the partial exposure unit, it is preferable that the light emitted from the light-emitting element is radiated to the substrate to be processed via a light diffusion plate provided below the plurality of light-emitting elements.

In this manner, the light emitted from the plurality of light-emitting elements can be diffused by the light-diffusing sheet, and the adjacent light-emitting elements can be connected in a line shape and irradiated downward.

According to the present invention, it can be easily adjusted in the plane of the substrate. The exposure amount of each region which is subdivided is set, and the uniformity of the residual film of the resist after the development processing can be improved, and the exposure apparatus and the exposure method for suppressing the variation in the line width and the pitch of the wiring pattern can be improved.

Hereinafter, one embodiment of the exposure apparatus and the exposure method of the present invention will be described based on the drawings. Fig. 1 is a cross-sectional view showing a schematic configuration of the inside of an exposure apparatus 1 according to the present invention.

The exposure apparatus 1 is, for example, a step-and-scan type projection exposure apparatus that synchronously scans a rectangular mask M (original) and a glass substrate G (processed substrate), and has a circuit pattern of the mask M. The image is projected and exposed on a resist film (photosensitive film) on the glass substrate G.

As shown in the figure, the exposure apparatus 1 includes a substrate stage 2 on which a glass substrate G coated with a resist liquid is placed, and a projection optical system 10 disposed above the substrate stage 2. Further, a reticle stage 3 for holding the mask M is provided above the projection optical system 10.

Further, the exposure apparatus 1 includes an illumination unit 5 (illumination optical system) disposed above the mask M, and a partial exposure unit 20 that is formed in a long shape in the substrate width direction to locally illuminate the substrate G. .

The substrate stage 2 is a support substrate G, and is moved in the axial direction of XYZ. The substrate stage 2 has a drive mechanism (not shown) that moves the stage in each of the above directions.

Further, the mask stage 3 supports the mask M, and has an opening (not shown) so that the mask M faces the projection optical system 10 below. framework. Further, the mask stage 3 has a drive mechanism (not shown) for moving the mask M in the Y direction of the scanning direction.

The substrate stage 2 and the reticle stage 3 are synchronously scanned in the Y direction in response to the speed ratio of the imaging magnification of the projection optical system 10, whereby exposure can be performed in a wider area.

Further, after the scanning exposure is ended, the substrate stage 2 is stepped in the X direction by a predetermined amount, and by repeating the scanning exposure in the Y direction, the glass substrate G can be exposed in a plurality of shots (exposure regions). Further, in the present embodiment, as shown in FIG. 2 (top view of the substrate stage 2), four shot regions SA1 to SA4 are provided on the glass substrate G as an example.

Further, the projection optical system 10 optically maintains the conjugate relationship between the mask M and the glass substrate G, and projects the image of the pattern of the mask M onto the glass substrate G. In the present embodiment, the projection optical system 10 is configured as a reflection diffraction type optical system using an off-axis image area, and has a trapezoidal mirror 11, a concave mirror 12, and a convex mirror 13. Further, in the exposure apparatus according to the present invention, the configuration of the projection optical system 10 is not limited to the above configuration, and the projection optical system 10 may be replaced with a diffraction system or a reflection system.

Further, the illumination unit 5 is a light beam of exposure light emitted as a light source (not shown) composed of a high pressure mercury lamp or a quasi-molecular laser, and is set in an arc shape by an illumination optical system (not shown). The beam of light illuminates the mask M uniformly.

As shown in Fig. 2, the circularly shaped diffracted light LT1 passing through the mask M is sequentially passed through the trapezoidal mirror 11, the concave mirror 12, the convex mirror 13, and the concave The mirror 12 and the trapezoidal mirror 11 reach the substrate stage 2 (glass substrate G).

Further, the partial exposure unit 20 is applied to a predetermined region of the resist film formed on the glass substrate G, directly irradiates the light LT2, and is locally exposed. When a positive resist is used as a resist, for example, the following is as follows. General drive. In other words, when the substrate G of the plurality of sheets is processed in a continuous manner, when the width of the wiring pattern is wider than the other regions and the pattern pitch is narrowed in a predetermined region of all the substrates G, the predetermined region is applied (using Partial exposure with reduced film thickness.

Further, in the following embodiments, although the positive resist is described, the exposure apparatus according to the present invention can be applied to the negative resist, and at this time, the resist is intended to be used. Partial exposure is applied to a defined area where the residual film remains thicker.

Next, the configuration of the partial exposure unit 20 will be described in more detail. FIG. 3 is a cross-sectional view of the partial exposure unit 20. Fig. 4 is a front view of the main portion of the partial exposure portion 20 as seen from the substrate width direction.

The partial exposure unit 20 is provided for local exposure (UV light emission) of the substrate G, and is disposed at a position that does not affect the projection optical system 10 above the substrate stage 2 as shown in FIG. 1 .

Further, as shown in FIGS. 3 and 4, the partial exposure unit 20 includes a linear light source 21 extending in the substrate width direction (Y direction), and the substrate G on the substrate stage 2 is below the light source 21. The scanning direction (X direction) moves.

The linear light source 21 is arranged on the circuit board 22 so as to have a predetermined wavelength (for example, close to the g line (436 nm), the h line (405 nm), and the i line (364 nm). A UV-LED element L in which the UV light of any one of the wavelengths emits light.

For example, Fig. 5(a) is a plan view of the circuit board 22 in which the light source 21 is viewed from below. As shown in Fig. 5(a), three rows of complex UV-LED elements L are arranged on the circuit board 22.

Here, as shown in Fig. 5(a), a plurality of (9 in the figure) UV-LED elements L are set as one illumination control unit (light emission control groups GR1 to GRn). In this way, by setting the plurality of LED elements L as the light emission control unit, variations in the illuminance of the light emitted between the light emitting elements can be suppressed.

Further, the irradiation range of the substrate G by the one light emission control group GR is set to be significantly smaller than the irradiation range of the arc-shaped diffracted light LT1 that is irradiated onto the substrate G from the projection optical system 10. Therefore, the exposure amount can be locally adjusted by the illumination control of the plurality of illumination control groups GR in the illumination range of the arc-shaped diffracted light LT1.

Further, when the light source 21 is constituted by a smaller number of UV-LED elements L, as shown in FIG. 5(b), the elements L are arranged in a staggered manner in the scanning direction (X direction) and the substrate width direction (Y direction). ) is better.

Further, as shown in FIGS. 3 and 4, a light radiation window 23 composed of a light diffusing plate is provided below the light source 21. That is, the light radiation window 23 is disposed between the light source 21 and the substrate G of the object to be irradiated.

In this way, since the light radiation window 23 composed of the light diffusing plate is provided, the light radiated from the light source 21 is moderately diffused by the light emitting window 23, so that the light of the adjacent UV-LED elements L is connected. It is linear and is illuminated below.

Further, as shown in FIG. 3, after the UV-LED element L, a light reflecting wall 24 extending in the substrate width direction (Y direction) is provided, and the light-emitting efficiency by the UV-LED element L is good. It is radiated from the light radiation window 23 to the lower side.

Further, each of the light emission control groups GR constituting the light source 21 is independently controlled to emit light by the light emission drive unit 25 (see FIG. 3). Further, the forward current values supplied to the respective light emission control groups GR (the UV-LED elements L) can be individually controlled. In other words, the UV-LED element L of each of the light-emission control groups GR is adjustable by the light-emission drive unit 25 in accordance with the illuminance of the light supplied with the current.

Further, the light-emitting drive unit 25 controls the driving by the control unit 40 constituted by a computer.

Further, as shown in Fig. 1, an illuminance sensor 30 for detecting the illuminance (radiation beam) of the light emitted from the light source 21 and passing through the light emission window 23 is provided on the edge portion of the substrate stage 2.

The illuminance sensor 30 is provided with a detecting portion for arranging a signal in a state of facing upward, and the height position of the detecting portion is adjusted to match the height of the upper surface of the substrate G (resist film).

Here, since the substrate platform 2 is arranged to be movable in the direction of each axis of the XY, the illuminance sensor 30 can be moved directly under the UV-LED element L of each of the illumination control groups GR by the movement of the substrate platform 2. mobile. Therefore, the illuminance sensor 30 is provided to receive the light LT2 radiated from the UV-LED elements L of the respective light emission control groups GR. The illumination sensor 30 thus constructed is used to measure the illumination of each illumination control group GR. The relationship between the current value supplied to the light-emission control group GR (the LED element L) and the illuminance is obtained.

Further, the control unit 40 has a brightness for controlling the respective light emission control groups GR constituting the light source 21 at a predetermined timing in a predetermined recording area, that is, supplied to each of the light emission control groups GR (constituted UV-LED elements) L) The current control value of the light control program P.

In the light-emission control program P, a light-emission control group for specifying a required illuminance (a current value supplied to the light-emission control group GR) to be irradiated to a predetermined position of the substrate G, and performing light-emission control on a predetermined position of the substrate G is set in advance. The information of GR is used as a parameter of the recipe used in the implementation.

Here, the preparation of the use of the partial exposure section 20 will be described using Figs. 6 to 9. This preparation process is carried out in order to determine a parameter (referred to as a recipe) relating to exposure processing for each mask pattern through which light is transmitted during the exposure processing. Specifically, it is carried out in order to fill in the parameters in the recipe table T1 shown in Fig. 8. Further, the recipe table T1 is memorized and held by the control unit 40.

Furthermore, the preparation process uses either of two types of sampling substrates (referred to as sampling objects 1, 2). First, the sample object 1 is a substrate to be processed which is subjected to half exposure and development processing after the resist is applied. Further, the sample object 2 is a substrate to be processed in which a wiring pattern is formed by a normal photolithography process.

As shown in Fig. 6, at the time of sampling the object 1, a plurality of substrates to be processed which are subjected to half exposure and development processing after the resist coating is sampled (Fig. 6) Step St1).

Next, the residual film thickness of the resist in the plane of the sampled substrate G is measured (step St2 of FIG. 6), and as shown in the schematic representation of FIG. 7, the complex quadratic coordinate value (x, y) is specified to be reduced. The predetermined area AR of the film (step St5 of Fig. 6).

Further, as shown in Fig. 6, at the time of sampling the object 2, a plurality of substrates to be processed in which wiring patterns are formed by ordinary photolithography are sampled (step St3 in Fig. 6).

Next, the line width and the pattern pitch of the wiring pattern in the plane of the sampled substrate G are measured (step St4 in FIG. 6), and the complex quadratic coordinate values (x, y) are schematically represented as shown in FIG. The specified area AR of the film should be specifically reduced (step St5 of Fig. 6).

When the predetermined area AR is specified, the control unit 40 calculates the required film thickness for each coordinate value in the predetermined area AR as shown in the recipe table T1 of Fig. 8 (for example, when the coordinates (x1, y1) are 1000 Å) (Step St6 of Figure 6). Further, according to the conditions of the thickness of the film and the type of the resist, the illuminance (0.2 mJ/cm ² at the time of coordinates (x1, y1)) to be irradiated for film reduction is calculated (step St7 of Fig. 6) ).

Further, as shown in the recipe table T1 of Fig. 8, the control unit 40 specifies the light emission control group GR (step St8 of Fig. 6) that can be irradiated to each coordinate value of the predetermined area AR, in order to expect The illuminance causes the light emission control group GR to emit light, and the desired forward current value is obtained from the correlation table T2 shown in Fig. 9 (step St9 of Fig. 6).

The correlation table T2 is expressed in each of the illumination control groups GR. The correlation between the illuminance value and the current value is memorized in the recording area of the control unit 40.

The above related table T2 is periodically updated as follows, for example.

First, in a state where the light source 21 (light radiation window 23) is set to a predetermined height, the substrate platform 2 is driven by the control signal from the control unit 40, and the illuminance sensor 30 is moved to the light radiation window 23. Below. Here, since the distance between the light radiation window 23 and the illuminance sensor 30 is equal to the distance between the light radiation window 23 and the upper surface of the substrate G, the illuminance detected by the illuminance sensor 30 becomes irradiated to the substrate G. Illumination.

Then, for each illumination control group GR, the forward current value supplied to the illumination control group GR of the light source 21 is increased or decreased within the rated current range, and the illumination illuminance is detected by the illumination sensor 30, and the illumination and current are detected. The relationship of values is memorized in the related table T2 of Fig. 9.

In this way, all the parameters are obtained along the flow of Fig. 6, and are set in the recipe table T1 of Fig. 8 to complete the preparation process (step St10 of Fig. 6).

Next, a series of operations by the exposure processing of the exposure apparatus 1 will be described along the tenth diagram (flow). Further, in the present embodiment, in the X-direction scanning (referred to as the forward scanning), the exposure processing of the shooting areas SA1 and SA2 shown in FIG. 2 is performed, and then the substrate stage 2 is moved in the Y direction by one step. Exposure processing of the shot areas SA3, SA4 is performed in a scan of return in the X direction (referred to as a reversal scan).

First, when the substrate G on which the resist film is formed is placed on the substrate stage 2 of the exposure apparatus 1 (step S1 of FIG. 10), the illumination unit 5 is attached to the mask M starts to illuminate an arc-shaped beam that is used as an exposure light. The circularly shaped diffracted light LT1 passing through the mask M is sequentially projected through the trapezoidal mirror 11, the concave mirror 12, the convex mirror 13, the concave mirror 12, and the trapezoidal mirror 11, as shown in Fig. 2, onto the substrate platform 2 (substrate G) Side) (Step S2 of Figure 10).

Further, the substrate platform 2 is moved in the X direction (the left direction of the paper surface of FIG. 2) while being synchronized with the mask stage 3 (i.e., scanning is started), and the resist film (the shot area) on the substrate G SA1, SA2) are initially exposed to the shape of the circuit pattern formed in the mask M (step S3 of Fig. 10).

Further, in the forward scanning, the control unit 40 passes the timing of the lower portion of the partial exposure unit 20 in a predetermined region on the substrate G to be locally exposed (step S4 in FIG. 10), as shown in FIG. 11 In the same manner, the light emission control of the light emission control groups GR1 to GRn constituting the light source 21 is performed (step S5 in Fig. 10).

Here, for example, when the predetermined area AR of the substrate G is irradiated with light, the light emission control of the light emission control groups GRn-1 and GRn-2 disposed above is performed, and the predetermined area AR is directly irradiated with the light LT2. . More specifically, as shown in the graph of Fig. 12 (relative to the size of the radiation beam (watt) passing through the time of each of the light-emission control groups GRn-1, GRn-2), the predetermined area AR of the substrate G passes During the period under the light source, control is performed to supply a forward current that varies in magnitude of the radiation beam W.

In this manner, not only the predetermined area AR of the substrate G is irradiated, but also a part of the area AR is irradiated with an arbitrary illuminance.

Further, in the case where the substrate G has another region to be locally exposed (step S6 in FIG. 10), in the region thereof, the light emission control group GR is controlled to emit light, and when not otherwise (step S6 in FIG. 10) Then, the partial exposure processing of the substrate G is completed.

Further, when the forward scanning by the arc-shaped diffracted light LT1 of the mask M and the projection optical system 10 is completed (step S7 of FIG. 10), the control unit 40 causes the substrate stage 2 to be in the Y direction. The stepping movement moves the mask stage 3 and the substrate stage 2 in the X direction while starting in the X direction (the right direction of the sheet of FIG. 2). Accordingly, the re-scanning is started, and the exposures of the remaining shot areas SA3 and SA4 are sequentially started (step S8 of Fig. 10).

Then, when the above-described reversing scan is completed, the control unit 40 stops the projection of the light beam from the illumination unit 5, and completes the exposure processing including the partial exposure in the exposure device 1 (step S9 in Fig. 10).

As described above, in the exposure apparatus 1, when the resist film formed on the substrate G is subjected to exposure processing, by the photomask M, by the mask M, The diffracted light LT1 performs exposure processing on each of the shot regions SA1 to SA4, and the local exposure unit 20 performs local exposure processing on an arbitrary portion.

In other words, in the partial exposure unit 20 disposed above the substrate, a plurality of light-emitting control groups GR are formed by a plurality of UV-LED elements L arranged in a line width direction (X direction), with respect to The substrate G moved below is controlled by the selected light emission control group GR.

Accordingly, it is easy to locally apply any portion to be thinner. For the exposure treatment, the film thickness can be reduced to the desired film thickness by the exposure amount (illuminance) set in advance.

Therefore, even when the resist film holds different film thicknesses (thick film portion and film portion) in the half exposure process (that is, a film thickness as thin as the film portion), the hindrance after the development process can be made. The film thickness of the film is uniform, and variation in line width and pitch of the wiring pattern can be suppressed.

Further, for the setting of the exposure amount (illuminance), all the light emission control groups GR are measured in advance using the illuminance sensor 30, and the relationship between the drive current value and the illuminance is maintained as a correlation table. The exposure amount can be adjusted with high precision.

Further, in the above-described embodiment, as shown in FIG. 1, the partial exposure unit 20 is disposed in the scanning direction (X-axis direction) behind the projection optical system 10 (the left side of the paper surface of the first drawing). For example, the present invention is not limited thereto, and may be a position in the projection optical system 10 that does not affect the passage of the diffracted light. For example, it may be arranged in the front of the projection optical system 10 (near the vicinity of the convex mirror 13).

Alternatively, even if the partial exposure unit 20 is disposed before and after the projection optical system 10, it is also possible to control the partial exposure unit 20 for switching the drive during the forward scanning and the backward scanning.

Alternatively, even if the partial exposure unit 20 is not disposed as described above so as not to affect the projection optical system 10, the mask M is irradiated with light radiated from the partial exposure portion 20 so as to be superimposed on the light passing through the projection optical system 10. It is also possible to illuminate LT1 and perform exposure.

At this time, for example, as shown in FIG. 13, it can be considered after the illumination unit 5 The configuration of the partial exposure unit 20 is disposed on the side (the left side of the paper surface of Fig. 1).

According to the configuration shown in Fig. 13, the light emitted from the partial exposure unit 20 is exposed through the projection optical system 10 through the mask M to expose the substrate G. Therefore, local exposure can be performed in the pattern area of the mask M, and the chemical reaction of the area where the exposure is not required can be suppressed, and the accuracy of the partial exposure can be further improved.

Further, in the exposure apparatus 1, even if the substrate G is directly irradiated with light by the partial exposure unit 20 as shown in Fig. 1, and the mask M is lighted as shown in Fig. 13 When either of the configurations of the substrate G is irradiated by the projection optical system 10 by irradiation, the partial exposure unit 20 may be arranged in plural without being limited to one. For example, when the substrate G is directly irradiated with light by the partial exposure unit 20 as shown in FIG. 1, even if the partial exposure units 20 are disposed before the projection optical system 10 as described above, When the mask M is irradiated with light and the substrate G is irradiated by the projection optical system 10 as shown in FIG. 13, the partial exposure unit 20 may be disposed before the illumination unit 5.

Further, the position of the partial exposure portion 20 is disposed in the exposure device 1, and the number thereof is not limited, even if one or a plurality of partial exposure portions 20 are disposed at each position (for example, arranged in parallel at the respective positions along the scanning direction) The plurality of partial exposure units 20 and the like are connected.

In the above embodiment, the light emission control group composed of the plurality of UV-LED elements L is taken as an example of the light emission control unit, but the present invention is not limited thereto, even if each UV-LED element is used. L is used as a lighting control unit, and a more subdivided partial exposure is also possible.

Further, in the above-described embodiment, the case where the residual film thickness after the half exposure process is uniform is described as an example, but the partial exposure method relating to the present invention may not be limited to the half exposure process. Apply it. For example, even when a general exposure treatment is performed without a half-exposure treatment, the thickness of the residual film of the resist can be made uniform by applying the partial exposure method according to the invention.

Further, it is not limited to the steps St6 and St7 of Fig. 6, and the required illuminance is obtained from the required residual film thickness, and the pattern line width and illuminance are obtained even if the pattern line width after the development processing is measured. The relevant information can also be formulated according to the relevant information.

In the above embodiment, the illuminance to be irradiated is determined from the film thickness of the predetermined region formed on the resist film of the substrate G, and the drive current value is obtained from the illuminance according to the correlation table. However, the relationship between the film thickness variation value (decrease thickness value) in the predetermined region and the drive current value of the emission control group GR irradiated to the predetermined region is not limited to this type. The database is stored in the related table T3 shown in Fig. 14 and can be used. In other words, according to the correlation table T3, the drive current value is directly determined from the film thickness variation value of the predetermined region, and the light emission control group GR may be caused to emit light by the drive current value. In this way, when the correlation table T3 is used, since the illuminance can be omitted in terms of parameters (that is, since the correlation table T2 of the illuminance and the drive current value is not used), the illuminance by using the illuminance can be omitted. The update operation of the periodicity correlation table T2 generated by the illuminance measurement of the sensor 31.

Furthermore, in the above embodiment, although the mask M is used as the original The version is not limited thereto, and a raster (Reticule) or the like can also be used.

1‧‧‧Exposure device

2‧‧‧Substrate platform

3‧‧‧mask platform (original platform)

5‧‧‧Lighting Department (Lighting Optical System)

10‧‧‧Projection optical system

11‧‧‧ ladder mirror

12‧‧‧ concave mirror

13‧‧‧ convex mirror

20‧‧‧Local Exposure Department

30‧‧‧illuminance sensor (illuminance detection means)

40‧‧‧Control Department

G‧‧‧Glass substrate (substrate to be processed)

L‧‧‧UV-LED components (light-emitting components)

LT1‧‧‧Diffraction light

LT2‧‧‧Light

M‧‧‧Photo Mask (original)

GR‧‧‧Lighting Control Group

T1‧‧‧Formula

T2‧‧‧ related table

T3‧‧‧ related table

Fig. 1 is a cross-sectional view showing the overall schematic configuration of an embodiment of an exposure apparatus according to the present invention.

Fig. 2 is a plan view showing a substrate platform provided in the exposure apparatus of Fig. 1.

Fig. 3 is a cross-sectional view showing a partial exposure portion of the exposure apparatus of Fig. 1.

Fig. 4 is a front elevational view of the main portion of the partial exposure portion of Fig. 3 as seen from the substrate width direction.

Fig. 5 is a plan view showing the arrangement of light-emitting elements constituting a light source.

Fig. 6 is a flowchart showing the construction of the setting parameters of the light emission control program of the exposure apparatus according to the present invention.

Fig. 7 is a plan view showing the light-emission control of the light-emitting element in the exposure apparatus according to the present invention, and is a plan view showing the substrate to be processed at a partial exposure position on the substrate to be processed.

Fig. 8 is a table showing an example of setting parameters of an emission control program included in the exposure apparatus according to the present invention.

Fig. 9 is a table showing an example of a correlation table between the driving current value and the illuminance of the light-emitting element to be used in the light-emitting control program of the exposure apparatus according to the present invention.

Figure 10 is a flow chart showing a series of actions by one of the exposure apparatuses related to the present invention.

Fig. 11 is a plan view showing the action of partial exposure in the exposure apparatus relating to the present invention.

Fig. 12 is a graph for explaining the action of partial exposure in the exposure apparatus relating to the present invention.

Figure 13 is a cross-sectional view showing another embodiment of the exposure apparatus relating to the present invention.

Fig. 14 is a table showing an application example of a correlation table between a driving current value and a film thickness of a light-emitting element which can be used in the light-emitting control program of the exposure apparatus according to the present invention.

15(a) to 15(e) are cross-sectional views for explaining a forming process of a wiring pattern using a half exposure process.

Figs. 16(a) to 16(e) are views showing a process of forming a wiring pattern using a half exposure process, and showing a cross-sectional view of a case where the thickness of the resist film is thicker than that in Fig. 15.

1‧‧‧Exposure device

2‧‧‧Substrate platform

3‧‧‧mask platform (original platform)

5‧‧‧Lighting Department (Lighting Optical System)

10‧‧‧Projection optical system

11‧‧‧ ladder mirror

12‧‧‧ concave mirror

13‧‧‧ convex mirror

20‧‧‧Local Exposure Department

30‧‧‧illuminance sensor (illuminance detection means)

40‧‧‧Control Department

G‧‧‧Glass substrate (substrate to be processed)

LT1‧‧‧Diffraction light

LT2‧‧‧Light

M‧‧‧Photo Mask (original)

Claims (19)

An exposure apparatus for exposing a circuit pattern to a substrate to be processed on which a photosensitive film is formed, characterized by comprising: an illumination optical system for irradiating light to an original plate on which a predetermined circuit pattern is formed; and a portion The exposure unit is different from the illumination optical system in that the substrate is partially irradiated with light, and the illumination optical system and the partial exposure unit are integrally provided inside the exposure device. The exposure apparatus according to claim 1, wherein the exposure apparatus includes: a substrate stage that holds the substrate and is movable in a scanning direction; and an original plate that can move in synchronization with the substrate platform while holding the original plate; And a projection optical system for projecting a pattern of the original plate irradiated by the illumination optical system on the substrate, wherein the exposure device moves the substrate on the substrate platform and the original plate on the original plate while moving on the substrate Exposing the pattern of the original plate, the partial exposure portion having a plurality of light-emitting elements arranged in a line width direction, capable of irradiating light to the substrate moved by the substrate platform; and a light-emitting driving unit The light-emitting element can be selectively driven by one or a plurality of the light-emitting elements of the plurality of light-emitting elements as the light-emitting control unit. The partial exposure portion is disposed above the substrate platform. The exposure apparatus according to claim 2, further comprising: a control unit that controls the light-emitting drive unit of the partial exposure unit, wherein the control unit controls the light-emitting drive unit to use one of the plurality of light-emitting elements or the plurality of light-emitting elements Selective illumination as a unit of illumination control. The exposure apparatus according to claim 3, wherein the control unit controls the light-emitting driving unit to memorize a relationship between an illuminance irradiated onto the substrate and a driving current value of the light-emitting element as a correlation table And determining a desired illuminance to be irradiated to the predetermined region in a predetermined region of the photosensitive film formed on the substrate, and the illuminance from the light illuminating element that can be irradiated to the predetermined region according to the correlation table The drive current value is determined, and the light-emitting element is caused to emit light by the drive current value. The exposure apparatus according to claim 4, wherein the illuminance detecting means is provided at a position equal to the height of the substrate to be processed so as to be movable forward and backward in the substrate width direction, and the partial exposure is detected. In the illuminance of the light to be irradiated, the control unit holds the relationship between the illuminance detected by the illuminance detecting means and the drive current value of the light-emitting element driven by the light as the correlation table. An exposure apparatus as described in claim 4 or 5, wherein The control unit divides the plurality of light-emitting elements into a plurality of light-emitting control groups along a substrate width direction, and generates, for each of the light-emitting control groups, a plurality of driving current values within a predetermined range and a driving current value thereof The illuminance is stored in the above related table. The exposure apparatus according to the third aspect of the invention, wherein the control unit controls the light-emission drive unit to increase irradiation of a predetermined region of the photosensitive film formed on the substrate to be processed and to increase the image by processing The relationship between the variation value of the film thickness and the driving current value of the light-emitting element irradiated by the predetermined region is stored in a correlation table, and the driving current value is determined from the film thickness variation value based on the correlation table, and the driving current value is obtained. The light-emitting element is caused to emit light. The exposure apparatus according to any one of claims 2, 3, 4, 5 or 7, wherein the partial exposure portion is disposed above the substrate to be processed moved by the substrate platform, The photosensitive film formed on the substrate to be processed is directly irradiated with light. The exposure apparatus according to any one of claims 2, 3, 4, 5 or 7, wherein the partial exposure portion is disposed above the original plate, and illuminates the original plate to pass through the original plate. The light is irradiated to the photosensitive film formed on the substrate to be processed by the above-described projection optical system. An exposure apparatus according to any one of claims 2, 3, 4, 5 or 7 wherein A light diffusing plate is disposed below the plurality of light emitting elements included in the partial exposure portion, and light emitted from the light emitting device is radiated to the substrate to be processed through the light diffusing plate. An exposure method for exposing a circuit pattern to a substrate to be processed on which a photosensitive film is formed, that is, an illumination optical system that integrally emits light to an original plate on which a predetermined circuit pattern is formed, and the above In an exposure apparatus that exposes a partial exposure portion that partially irradiates light to the substrate, an exposure method in which the pattern of the original plate is exposed on the substrate is characterized in that the substrate and the original plate are simultaneously moved while moving. The pattern of the original plate is exposed on the substrate, and the substrate is partially irradiated with light by the partial exposure portion. The exposure method according to claim 11, wherein the exposure apparatus includes: a substrate platform that holds the substrate and is movable in a scanning direction; and an original plate that can hold the original plate and move in synchronization with the substrate platform; And a projection optical system for projecting a pattern of the original plate irradiated by the illumination optical system on the substrate, wherein the partial exposure portion is disposed above the substrate stage, and the partial exposure portion is linearly a plurality of light-emitting elements arranged in a width direction of the substrate, selectively driving the light-emitting elements as one or more light-emitting elements, and locally irradiating the substrate moved by the substrate platform Light. The exposure method according to claim 12, wherein the relationship between the illuminance irradiated onto the substrate and the driving current value of the light-emitting element is stored as a correlation table, and the photosensitive film formed on the substrate is used. In the predetermined region, the required illuminance to be irradiated according to the film thickness is obtained, and the light-emitting element that can be irradiated to the predetermined region is determined from the required illuminance according to the correlation table, and the driving current is obtained by the driving current. The value causes the above-mentioned light-emitting element to emit light. The exposure method according to claim 13, wherein the illuminance detecting means capable of moving forward and backward in the substrate width direction at a position at the same height as the substrate to be processed is illuminating control in the partial exposure portion All the light-emitting elements of the unit are measured for illuminance, and the relationship between the drive current value and the illuminance is maintained as the correlation table. The exposure method according to claim 13 or 14, wherein the plurality of light-emitting elements are divided into a plurality of light-emitting control groups along a substrate width direction, and for each of the light-emitting control groups, a plurality of pixels within a predetermined range The driving current value and the illuminance generated by the driving current value thereof are stored in the above correlation table. The exposure method according to the invention of claim 12, wherein the irradiation of the predetermined region of the photosensitive film formed on the substrate to be processed and the variation of the film thickness by the development process are on The relationship between the drive current values of the light-emitting elements irradiated in the predetermined area is stored in a correlation table, and the drive current value is determined from the film thickness variation value based on the correlation table, and the light-emitting element is caused to emit light by the drive current value. The exposure method according to any one of claims 11, wherein the photosensitive film formed on the substrate to be processed is directly irradiated with light by the partial exposure portion. The exposure method according to any one of the preceding claims, wherein the partial exposure unit irradiates the original plate from above the original plate, and the diffracted light transmitted through the original plate passes through the projection optics. The photosensitive film formed on the substrate to be processed is irradiated with the system. The exposure method according to any one of the preceding claims, wherein, in the partial exposure portion, light emitted from the light-emitting element is disposed in the plurality of light-emitting elements The light diffusing plate below is radiated to the substrate to be processed.