TW201305360A - 鍍膜件及其製備方法 - Google Patents

鍍膜件及其製備方法 Download PDF

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TW201305360A
TW201305360A TW100126887A TW100126887A TW201305360A TW 201305360 A TW201305360 A TW 201305360A TW 100126887 A TW100126887 A TW 100126887A TW 100126887 A TW100126887 A TW 100126887A TW 201305360 A TW201305360 A TW 201305360A
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molybdenum
aluminum nitride
layer
titanium aluminum
layers
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Wen-Rong Chen
Huann-Wu Chiang
Cheng-Shi Chen
Cong Li
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Hon Hai Prec Ind Co Ltd
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Abstract

一種鍍膜件，其包括基材、形成於基材表面的複數鉬層和複數鈦鋁氮層，該複數鉬層和複數鈦鋁氮層交替排布，其中與所述基材直接相結合的係鉬層，最外層為鈦鋁氮層。所鍍多層塗層具有高硬度，良好的耐腐蝕性及耐高溫性能，從而有效提高鍍膜件的使用壽命。此外，本發明還提供一種所述鍍膜件的製備方法。

Description

鍍膜件及其製備方法
本發明涉及一種鍍膜件及其製備方法。
過渡金屬氮化物、碳化物和碳氮化物具有高硬度、高抗磨損性能和良好的化學穩定性等優異性能。因此，通常將過渡金屬氮化物、碳化物和碳氮化物以薄膜的形式鍍覆在刀具或模具表面，以此來提高刀具和模具的使用壽命。
然而，對於工作條件苛刻的刀具或模具，不僅要求鍍覆在刀具或模具表面的膜層具有高抗磨損性能，還要求膜層具有較佳的耐腐蝕性及耐高溫性能。因此，在刀具或者模具表面僅鍍覆過渡金屬氮化物、碳化物和碳氮化物層，無法滿足要求。
有鑒於此，有必要提供一種有效解決上述問題的鍍膜件。
另外，還有必要提供一種上述鍍膜件的製備方法。
一種鍍膜件，其包括基材、形成於基材表面的複數鉬層和複數鈦鋁氮層，該複數鉬層和複數鈦鋁氮層交替排布，其中與所述基材直接相結合的係鉬層，最外層為鈦鋁氮層。
一種鍍膜件的製備方法，其包括如下步驟：
提供基材；
在該基材的表面形成鉬層；
在該鉬層的表面形成鈦鋁氮層；
交替重複上述形成鉬層和鈦鋁氮層的步驟，且使鍍膜件的最外層為鈦鋁氮層。
本發明鍍膜件在基材表面交替濺鍍鉬層和鈦鋁氮層形成鉬/鈦鋁氮奈米多層膜，該奈米多層膜中的組份呈週期性變化，產生較強的介面效應、層間耦合效應，因此具有與單層塗層不同的特性；膜層介面的增多抑制了鉬/鈦鋁氮奈米多層膜之間位錯的產生，從而使鍍膜件獲得了高強硬度；同時，鉬/鈦鋁氮奈米多層膜結構能夠使膜層的晶粒細化，膜層更加緻密，從而提高鉬/鈦鋁氮奈米多層膜的耐腐蝕性；此外，由於鉬層具有良好的耐高溫性能，使所述鍍膜件具有良好的耐高溫性能，從而有效提高鍍膜件的使用壽命。
請參閱圖1，本發明一較佳實施方式的鍍膜件10包括基材11、形成於基材11表面的複數鉬層13和複數鈦鋁氮層15，該複數鉬層13和複數鈦鋁氮層15交替排布，其中與所述基材11直接相結合的係鉬層13，最外層為鈦鋁氮層15。所述複數鉬層13加上複數鈦鋁氮層15的總厚度可為1.2～2.4μm。本實施例中，所述複數鉬層13和複數鈦鋁氮層15的層數可分別為40～60層。
該基材11的材質可為金屬、玻璃或陶瓷。
該鉬層13可以磁控濺射的方式形成，所述每一鉬層13的厚度為15～20nm。
該鈦鋁氮層15可以磁控濺射的方式形成，所述每一鈦鋁氮層15的厚度為15～20nm。該鈦鋁氮層15中鈦的原子百分含量為75～82%，鋁的原子百分含量為15～17%，氮的原子百分含量為1～10%。
本明一較佳實施方式的鍍膜件10的製備方法，其包括如下步驟：
請參閱圖2，提供一真空鍍膜機20，該真空鍍膜機20包括一鍍膜室21及連接於鍍膜室21的一真空泵30，真空泵30用以對鍍膜室21抽真空。該鍍膜室21內設有轉架(未圖示)、相對設置的二鉬靶23和相對設置的二鈦鋁合金靶24。轉架帶動基材11沿圓形的軌跡25公轉，且基材11在沿軌跡25公轉時亦自轉。該鈦鋁合金靶24中鈦的原子百分含量為75～82%，剩餘的為鋁。
提供基材11，該基材11的材質可為金屬、玻璃或陶瓷。
對該基材11進行表面預處理。該表面預處理可包括常規的對基材11進行無水乙醇超聲波清洗及烘乾等步驟。
採用磁控濺射法在經清洗後的基材11的表面濺鍍鉬層13。濺鍍該鉬層13在所述真空鍍膜機20中進行。將基材11放入鍍膜室21內，將該鍍膜室21抽真空至8×10-3Pa，並加熱所述鍍膜室21至溫度為60～200℃。濺鍍時，開啟鉬靶23的電源，設置鉬靶23的電源功率為10～15kw，通入工作氣體氬氣，氬氣流量為400～800sccm，對基材11施加-150～-500V的偏壓。濺鍍鉬層13的時間為0.5～1min。
保持氬氣流量、基材11的偏壓、鍍膜室21的溫度等參數不變，繼續採用磁控濺射法在所述鉬層13的表面濺鍍鈦鋁氮層15。關閉鉬靶23的電源，開啟鈦鋁合金靶24，設置鈦鋁合金靶24的電源功率為8～12kw；並通入反應氣體氮氣，氮氣流量為100～200sccm。濺鍍鈦鋁氮層15的時間為0.5～1min。
重複上述步驟，以交替濺鍍鉬層13和鈦鋁氮層15。
下面藉由實施例來對本發明進行具體說明。
實施例1
本實施例所使用的真空鍍膜機20為中頻磁控濺射鍍膜機。
本實施例所使用的基材11的材質為模具鋼。
濺鍍鉬層13：鉬靶23的功率為10kw，氬氣流量為400sccm，基材11的偏壓為-200V，鍍膜室21的溫度溫度為82℃，鍍膜時間為0.5min；該鉬層13的厚度為15nm；
濺鍍鈦鋁氮層15：鈦鋁合金靶24的功率為10kw，氬氣流量、偏壓、鍍膜室21的溫度等工藝參數與濺鍍鉬層13的相同，鍍膜時間為0.5min；該鈦鋁氮層15的厚度為15nm。
重複上述交替濺鍍鉬層13和鈦鋁氮層15的步驟，交替濺鍍鉬層13和鈦鋁氮層15的次數總共為55次。
實施例2
本實施例所使用的真空鍍膜機20為中頻磁控濺射鍍膜機。
本實施例所使用的基材11的材質為模具鋼。
濺鍍鉬層13：鉬靶23的功率為10kw，氬氣流量為500sccm，基材11的偏壓為-200V，鍍膜室21的溫度溫度為82℃，鍍膜時間為1min；該鉬層13的厚度為20nm；
濺鍍鈦鋁氮層15：鈦鋁合金靶24的功率為10kw，氬氣流量、偏壓、鍍膜室21的溫度等工藝參數與濺鍍鉬層13的相同，鍍膜時間為1min；該鈦鋁氮層15的厚度為20nm。
重複上述交替濺鍍鉬層13和鈦鋁氮層15的步驟，交替濺鍍鉬層13和鈦鋁氮層15的次數總共為55次。
本發明鍍膜件10在基材11表面交替濺鍍鉬層13和鈦鋁氮層15形成鉬/鈦鋁氮奈米多層膜，該奈米多層膜中的組份呈週期性變化，產生較強的介面效應、層間耦合效應，因此具有與單層塗層不同的特性；膜層介面的增多抑制了鉬/鈦鋁氮奈米多層膜之間位錯的產生，從而使鍍膜件10獲得了高強硬度；同時，鉬/鈦鋁氮奈米多層膜結構能夠使膜層的晶粒細化，膜層更加緻密，從而提高鉬/鈦鋁氮奈米多層膜的耐腐蝕性；此外，由於鉬層13具有良好的耐高溫性能，使所述鍍膜件10具有良好的耐高溫性能，從而有效提高鍍膜件10的使用壽命。
10．．．鍍膜件
11．．．基材
13．．．鉬層
15．．．鈦鋁氮層
20．．．真空鍍膜機
21．．．鍍膜室
23．．．鉬靶
24．．．鈦鋁合金靶
25．．．軌跡
30．．．真空泵
圖1為本發明一較佳實施例的鍍膜件的剖視圖；
圖2為本發明一較佳實施例真空鍍膜機的俯視示意圖。
10．．．鍍膜件
11．．．基材
13．．．鉬層
15．．．鈦鋁氮層

Claims (10)

  1. 一種鍍膜件，其包括基材，其改良在於：該鍍膜件還包括形成於基材表面的複數鉬層和複數鈦鋁氮層，該複數鉬層和複數鈦鋁氮層交替排布，其中與所述基材直接相結合的係鉬層，最外層為鈦鋁氮層。
  2. 如申請專利範圍第1項所述之鍍膜件，其中所述複數鉬層和複數鈦鋁氮層的總厚度為1.2～2.4μm。
  3. 如申請專利範圍第1項所述之鍍膜件，其中所述複數鉬層和複數鈦鋁氮層的層數分別為40～60層。
  4. 如申請專利範圍第1項所述之鍍膜件，其中該基材的材質為金屬、玻璃或陶瓷。
  5. 如申請專利範圍第1項所述之鍍膜件，其中所述每一鉬層的厚度為15～20nm。
  6. 如申請專利範圍第1項所述之鍍膜件，其中所述每一鈦鋁氮層的厚度為15～20nm。
  7. 如申請專利範圍第1項所述之鍍膜件，其中所述每一鈦鋁氮層中鈦的原子百分含量為75～82%，鋁的原子百分含量為15～17%，氮的原子百分含量為1～10%。
  8. 一種鍍膜件的製備方法，其包括如下步驟：
    提供基材；
    在該基材的表面形成鉬層；
    在該鉬層的表面形成鈦鋁氮層；
    交替重複上述形成鉬層和鈦鋁氮層的步驟，且使鍍膜件的最外層為鈦鋁氮層。
  9. 如申請專利範圍第8項所述之鍍膜件的製備方法，其中形成所述鉬層的方法為：採用磁控濺射法，使用鉬靶，設置鉬靶的電源功率為10～15kw，以氬氣為工作氣體，氬氣流量為400～800sccm，對基材施加偏壓為-150～-500V，鍍膜溫度為60～200℃，鍍膜時間為0.5～1min。
  10. 如申請專利範圍第8項所述之鍍膜件的製備方法，其中形成所述鈦鋁氮層的方法為：採用磁控濺射法，使用鈦鋁合金靶，該鈦鋁合金靶中鈦的原子百分含量為75～82%，剩餘的為鋁，設置所述鈦鋁合金靶的電源功率為8～12kw，以氮氣為工作氣體，氮氣流量為100～200sccm，以氬氣為工作氣體，氬氣流量為400～800sccm，對基材施加偏壓為-150～-500V，鍍膜溫度為60～200℃，鍍膜時間為0.5～1min。
TW100126887A 2011-07-27 2011-07-29 鍍膜件及其製備方法 TW201305360A (zh)

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