TWI417409B - 鍍膜件及其製造方法 - Google Patents

鍍膜件及其製造方法 Download PDF

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TWI417409B
TWI417409B TW100115406A TW100115406A TWI417409B TW I417409 B TWI417409 B TW I417409B TW 100115406 A TW100115406 A TW 100115406A TW 100115406 A TW100115406 A TW 100115406A TW I417409 B TWI417409 B TW I417409B
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mass percentage
target
ceramic layer
temperature
substrate
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TW201243075A (en
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Hsin Pei Chang
wen rong Chen
Huann Wu Chiang
Cheng Shi Chen
Juan Zhang
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Hon Hai Prec Ind Co Ltd
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Description

鍍膜件及其製造方法
本發明涉及一種鍍膜件及其製造方法，尤其涉及一種具有Si-B-C-N陶瓷層的鍍膜件及其製造方法。
Si-B-C-N複合陶瓷材料由於其具有高硬度、低密度及優異的高溫穩定性、抗氧化性、機械性能等性能，可應用於高溫、高壓、高頻等極端條件下，引起了人們對其極大地關注。
習知技術，用於製造Si-B-C-N複合陶瓷的主要方法如下：熱壓燒結法、反應燒結法、原位合成法及前驅體法等。前驅體法由於其具有燒結溫度低、原子尺寸可控性佳的優點而被人們廣泛應用，但同時前驅體法亦存在一定的缺陷如：選取氯矽烷為原料時，易產生難以去除的副產品氯化銨；選取硼烷為原料時難以摻入硼元素；上述兩種情況都將影響Si-B-C-N複合陶瓷的性能。此外，選用某些含硼有機物為原料製備出的Si-B-C-N複合陶瓷雖然具有較佳的性能，但存在製造工藝複雜、實驗條件苛刻等缺點。
鑒於此，本發明提供一種可克服上述問題的具有Si-B-C-N陶瓷層的鍍膜件。
另外，本發明還提供一種上述鍍膜件的製造方法。
一種鍍膜件，包括基體及藉由磁控濺射鍍膜法形成於基體上的Si-B-C-N陶瓷層，該Si-B-C-N陶瓷層為非晶態層，該Si-B-C-N陶瓷層中Si的質量百分含量為30~60%，B的質量百分含量為10~20%，C的質量百分含量為10~20%，N的質量百分含量為20~30%。
一種鍍膜件的製造方法，其包括如下步驟：提供基體；藉由磁控濺射鍍膜法，以Si-B-N靶為靶材，以乙炔為反應氣體在該基體的表面形成Si-B-C-N陶瓷層，該Si-B-C-N陶瓷層為非晶態層，該Si-B-C-N陶瓷層中Si的質量百分含量為30~60%，B的質量百分含量為10~20%，C的質量百分含量為10~20%，N的質量百分含量為20~30%。
本發明所述Si-B-C-N陶瓷層中B元素的引入係藉由磁控濺射Si-B-N靶實現的，幾乎沒有副產物的產生或雜質的帶入，且製造方法簡單，如此使Si-B-C-N陶瓷材料在高溫抗氧化領域具有廣泛的應用前景。
經上述方式形成的Si-B-C-N陶瓷層為緻密的非晶態層，且該Si-B-C-N陶瓷層中含有較多的Si-C，Si-N，C-N等共價鍵，使所述Si-B-C-N陶瓷層具有良好的抗氧化性，從而提高了所述鍍膜件的抗氧化性。進一步地，由於B元素的加入可提高該Si-B-C-N陶瓷層的析晶溫度，使該Si-B-C-N陶瓷層在較高的溫度下仍可保持非晶態結構，如此，使所述鍍膜件具有良好的高溫抗氧化性。
10‧‧‧鍍膜件
11‧‧‧基體
13‧‧‧Si-B-C-N陶瓷層
20‧‧‧真空鍍膜機
21‧‧‧鍍膜室
23‧‧‧Si-B-N靶
25‧‧‧軌跡
30‧‧‧真空泵
圖1係本發明一較佳實施例鍍膜件的剖視圖； 圖2係本發明一較佳實施例真空鍍膜機的示意圖。
請參閱圖1，本發明一較佳實施例的鍍膜件10包括基體11及形成於基體11表面的矽-硼-碳-氮(Si-B-C-N)陶瓷層13。該鍍膜件10可為渦輪葉片、噴嘴等航天航空機械零部件及交通零部件。
基體11的材質為金屬，優選為不銹鋼、鋁或鋁合金，但不限於上述材料。
所述Si-B-C-N陶瓷層13為緻密的非晶態層。其中，Si的質量百分含量為30~60%，B的質量百分含量為10~20%，C的質量百分含量為10~20%，N的質量百分含量為20~30%。該Si-B-C-N陶瓷層13的厚度為100~1000nm。該Si-B-C-N陶瓷層13藉由磁控濺射鍍膜法形成。
本發明鍍膜件10的製造方法包括以下步驟：提供基體11，該基體11的材質為金屬，該金屬可為不銹鋼、鋁或鋁合金等，但不限於上述材料。
將基體11放入無水乙醇中進行超聲波清洗，以去除基體11表面的污漬，清洗時間可為30~50min。
對經上述處理後的基體11的表面進行電漿清洗，以進一步去除基體11表面的油污，以及改善基體11表面與後續鍍層的結合力。結合參閱圖2，提供一真空鍍膜機20，該真空鍍膜機20包括一鍍膜室21及連接於鍍膜室21的一真空泵30，真空泵30用以對鍍膜室21抽真空。該鍍膜室21內設有轉架(未圖示)和相對設置的二Si-B-N靶23。轉架帶動基體11沿圓形的軌跡25公轉，且基體11在沿軌跡 25公轉時亦自轉。
該電漿清洗的具體操作及工藝參數可為：將基體11固定於真空鍍膜機20的鍍膜室21中的轉架上，將該鍍膜室21抽真空至3.0×10-5Torr，然後向鍍膜室21內通入流量約為500sccm(標準狀態毫升/分鐘)的氬氣(純度為99.999%)，並施加-200~-500V的偏壓於基體11，對基體11的表面進行電漿清洗，清洗時間為3~10min。
採用磁控濺射鍍膜法，在經電漿清洗後的基體11上濺鍍Si-B-C-N陶瓷層13。濺鍍該Si-B-C-N陶瓷層13在所述真空鍍膜機20中進行。開啟Si-B-N靶23，並設定Si-B-N靶23的功率為3~5kw；以乙炔為反應氣體，調節乙炔的流量為10~100sccm，以氬氣為工作氣體，調節氬氣的流量為300~500sccm。濺鍍時，對基體11施加-50~-180V的偏壓，並加熱所述鍍膜室21至溫度為50~100℃(即鍍膜溫度為50~100℃)，鍍膜時間可為20~60min。該Si-B-C-N陶瓷層13的厚度可為100~1000nm。
可以理解的，本發明所述鍍膜件10還可在基體11與Si-B-C-N陶瓷層13之間設置一打底層，以增加膜基結合力。
其中，所述Si-B-N靶23中Si的質量百分含量為12~45%，B的質量百分含量為10~35%，N的質量百分含量為40~55%。所述Si-B-N靶23藉由粉末冶金的方法製得，其具體步驟及工藝參數如下：
(1)將氮化硼(BN)或硼(B)與氮化矽(Si3N4)的混合粉體原料放入球磨機中混合均勻；其中，BN或B與Si3N4的摩爾比為1：1~50，優選為1：1~20，更佳優選為1：3。
(2)採用冷等靜壓法，將上述混合粉體進行預壓成型形成一坯 體，成型壓力100~300MPa，保壓時間1~10min。
(3)將上述坯體置入放電等離子體(SPS)燒結爐中進行燒結。在該燒結過程中，先以90~100℃/min速率進行升溫，當溫度升高到800~900℃時進行預壓，預壓壓力為20~40MPa，預壓時間為1~5min；預壓後，將溫度上升到900~1500℃，於50~70MPa壓力下保壓3~10min；降溫後取出得到Si-B-N靶23。
本發明所述Si-B-C-N陶瓷層13中B元素的引入係藉由磁控濺射Si-B-N靶實現的，幾乎沒有副產物的產生或雜質的帶入，且製造方法簡單，如此使Si-B-C-N陶瓷材料在高溫抗氧化領域具有廣泛的應用前景。
經上述方式形成的Si-B-C-N陶瓷層13為緻密的非晶態層，且該Si-B-C-N陶瓷層13中含有較多的Si-C，Si-N，C-N等共價鍵，使所述Si-B-C-N陶瓷層13具有良好的抗氧化性，從而提高了所述鍍膜件10的抗氧化性。進一步地，由於B元素的加入可提高該Si-B-C-N陶瓷層13的析晶溫度，使該Si-B-C-N陶瓷層13在較高的溫度下仍可保持非晶態結構，如此，使所述鍍膜件10具有良好的高溫抗氧化性。
10‧‧‧鍍膜件
11‧‧‧基體
13‧‧‧Si-B-C-N陶瓷層

Claims (4)

  1. 一種鍍膜件的製造方法，其包括如下步驟：提供基體；採用磁控濺射鍍膜法，以Si-B-N靶為靶材，以乙炔為反應氣體在該基體的表面形成Si-B-C-N陶瓷層，該Si-B-C-N陶瓷層為非晶態層，該Si-B-C-N陶瓷層中Si的質量百分含量為30~60%，B的質量百分含量為10~20%，C的質量百分含量為10~20%，N的質量百分含量為20~30%。
  2. 如申請專利範圍第1項所述之鍍膜件的製造方法，其中所述Si-B-N靶以如下方式製備：將氮化硼或硼與氮化矽的混合粉體原料放入球磨機中混合均勻；其中，氮化硼或硼與氮化矽的摩爾比為1：1~50；採用冷等靜壓，將上述混合粉體進行預壓成型形成一坯體，成型壓力100~300MPa，保壓時間1~10min；將上述坯體置入放電等離子體燒結爐中進行燒結，在該燒結過程中，先以90~100℃/min速率進行升溫，當溫度升高到800~900℃時進行預壓，預壓壓力為20~40MPa，預壓時間為1~5min；預壓後，將溫度上升到900~1500℃，於50~70MPa壓力下保壓3~10min；降溫後取出得到Si-B-N靶。
  3. 如申請專利範圍第2項所述之鍍膜件的製造方法，其中所述Si-B-N靶中Si的質量百分含量為12~45%，B的質量百分含量為10~35%，N的質量百分含量為40~55%。
  4. 如申請專利範圍第1項所述之鍍膜件的製造方法，其中形成 所述Si-B-C-N陶瓷層的工藝參數為：Si-B-N靶的功率為3~5kw，乙炔的流量為10~100sccm，以氬氣為工作氣體，氬氣的流量為300~500sccm，施加於基體的偏壓為-50~-180V，鍍膜溫度為5~100℃，鍍膜時間為20~60min。
TW100115406A 2011-04-28 2011-05-03 鍍膜件及其製造方法 TWI417409B (zh)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200510562A (en) * 2003-07-25 2005-03-16 Morgan Advanced Ceramics Inc CVD diamond-coated composite substrate containing a carbide-forming material and ceramic phases and method for making same
US20100304102A1 (en) * 2005-11-04 2010-12-02 Metaplas Ionon Oberflaechenveredelungstechnik Gmbh Layer arrangement for the formation of a coating on a surface of a substrate, coating method, and substrate with a layer arrangement

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4380622B2 (ja) * 2005-11-04 2009-12-09 日立ツール株式会社 多層皮膜被覆部材及びその製造方法
EP2149620B1 (en) * 2008-07-31 2020-04-29 Oerlikon Surface Solutions AG, Pfäffikon Multilayer film-coated member and method for producing it
EP2149624B1 (en) * 2008-07-31 2012-08-08 Sulzer Metaplas GmbH Multilayer film-coated member and method for producing it

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200510562A (en) * 2003-07-25 2005-03-16 Morgan Advanced Ceramics Inc CVD diamond-coated composite substrate containing a carbide-forming material and ceramic phases and method for making same
US20100304102A1 (en) * 2005-11-04 2010-12-02 Metaplas Ionon Oberflaechenveredelungstechnik Gmbh Layer arrangement for the formation of a coating on a surface of a substrate, coating method, and substrate with a layer arrangement

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Fritz Aldinger et al., "Precursor-derived Si-B-C-N ceramics", Pure & Appl. Chem., 70, 2, 1998, 439-448 *

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