TW201304002A - 電漿處理方法、電漿處理裝置及半導體元件製造方法 - Google Patents

電漿處理方法、電漿處理裝置及半導體元件製造方法 Download PDF

Info

Publication number
TW201304002A
TW201304002A TW101121198A TW101121198A TW201304002A TW 201304002 A TW201304002 A TW 201304002A TW 101121198 A TW101121198 A TW 101121198A TW 101121198 A TW101121198 A TW 101121198A TW 201304002 A TW201304002 A TW 201304002A
Authority
TW
Taiwan
Prior art keywords
semiconductor substrate
plasma processing
plasma
active species
semiconductor
Prior art date
Application number
TW101121198A
Other languages
English (en)
Chinese (zh)
Inventor
久保井信行
深澤正永
Original Assignee
新力股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新力股份有限公司 filed Critical 新力股份有限公司
Publication of TW201304002A publication Critical patent/TW201304002A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/0134—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW101121198A 2011-07-15 2012-06-13 電漿處理方法、電漿處理裝置及半導體元件製造方法 TW201304002A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011156533A JP2013026265A (ja) 2011-07-15 2011-07-15 プラズマ処理方法、プラズマ処理装置、及び、半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW201304002A true TW201304002A (zh) 2013-01-16

Family

ID=47482835

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101121198A TW201304002A (zh) 2011-07-15 2012-06-13 電漿處理方法、電漿處理裝置及半導體元件製造方法

Country Status (4)

Country Link
US (1) US10074517B2 (https=)
JP (1) JP2013026265A (https=)
CN (1) CN102881549A (https=)
TW (1) TW201304002A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9059092B2 (en) * 2013-09-17 2015-06-16 Taiwan Semiconductor Manufacturing Company Limited Chemical dielectric formation for semiconductor device fabrication
US9728445B2 (en) * 2014-01-22 2017-08-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming conducting via and damascene structure
CN109790313A (zh) 2016-09-30 2019-05-21 简·探针公司 经等离子体处理的表面上的组合物

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2989147A (en) * 1958-03-03 1961-06-20 Koppers Co Inc Hcn removal
US4855017A (en) * 1985-05-03 1989-08-08 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
DE4116840A1 (de) * 1991-05-23 1992-11-26 Degussa Verfahren zur abtrennung von cyanwasserstoff aus gasen und abgasen
JP2601208B2 (ja) * 1994-07-26 1997-04-16 ソニー株式会社 半導体基体の処理方法
US5843847A (en) * 1996-04-29 1998-12-01 Applied Materials, Inc. Method for etching dielectric layers with high selectivity and low microloading
US5888591A (en) * 1996-05-06 1999-03-30 Massachusetts Institute Of Technology Chemical vapor deposition of fluorocarbon polymer thin films
US5679214A (en) * 1996-06-14 1997-10-21 Taiwan Semiconductor Manufacturing Company, Ltd Method of maintaining a strong endpoint detection signal for RIE processes, via use of an insitu dry clean procedure
JP3160205B2 (ja) 1996-09-02 2001-04-25 科学技術振興事業団 半導体装置の製造方法およびその製造装置
US5983906A (en) * 1997-01-24 1999-11-16 Applied Materials, Inc. Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment
KR100311487B1 (ko) * 1997-12-16 2001-11-15 김영환 산화막식각방법
JP2000009037A (ja) * 1998-06-18 2000-01-11 Fujitsu Ltd 排気装置及び排気方法
US6613681B1 (en) * 1998-08-28 2003-09-02 Micron Technology, Inc. Method of removing etch residues
US6284149B1 (en) * 1998-09-18 2001-09-04 Applied Materials, Inc. High-density plasma etching of carbon-based low-k materials in a integrated circuit
TW434816B (en) * 1998-12-28 2001-05-16 Asahi Chemical Micro Syst Method for forming contact hole
SE9903242D0 (sv) * 1999-09-13 1999-09-13 Acreo Ab A semiconductor device
US6793849B1 (en) * 2000-10-09 2004-09-21 The University Of Chicago N-type droping of nanocrystalline diamond films with nitrogen and electrodes made therefrom
US6776851B1 (en) * 2001-07-11 2004-08-17 Lam Research Corporation In-situ cleaning of a polymer coated plasma processing chamber
US7465362B2 (en) * 2002-05-08 2008-12-16 Btu International, Inc. Plasma-assisted nitrogen surface-treatment
US6897154B2 (en) * 2002-06-14 2005-05-24 Applied Materials Inc Selective etching of low-k dielectrics
US7005390B2 (en) * 2002-10-09 2006-02-28 Intel Corporation Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials
JP3757213B2 (ja) * 2003-03-18 2006-03-22 富士通株式会社 半導体装置の製造方法
JP2005033038A (ja) 2003-07-07 2005-02-03 Japan Science & Technology Agency 半導体装置及びその製造方法、並びに処理装置
US7351663B1 (en) * 2004-06-25 2008-04-01 Cypress Semiconductor Corporation Removing whisker defects
US7361930B2 (en) * 2005-03-21 2008-04-22 Agilent Technologies, Inc. Method for forming a multiple layer passivation film and a device incorporating the same
US20070207275A1 (en) * 2006-02-21 2007-09-06 Applied Materials, Inc. Enhancement of remote plasma source clean for dielectric films
US7556970B2 (en) * 2006-03-27 2009-07-07 Tokyo Electron Limited Method of repairing damaged film having low dielectric constant, semiconductor device fabricating system and storage medium
JP2008000729A (ja) 2006-06-26 2008-01-10 Osaka Univ 廃液処理装置および廃液処理方法
US7642193B2 (en) * 2006-08-07 2010-01-05 Tokyo Electron Limited Method of treating a mask layer prior to performing an etching process
US7977244B2 (en) * 2006-12-18 2011-07-12 United Microelectronics Corp. Semiconductor manufacturing process
US7622390B2 (en) * 2007-06-15 2009-11-24 Tokyo Electron Limited Method for treating a dielectric film to reduce damage
CN101740333B (zh) * 2008-11-13 2011-10-05 中芯国际集成电路制造(北京)有限公司 灰化处理方法
US8962454B2 (en) * 2010-11-04 2015-02-24 Tokyo Electron Limited Method of depositing dielectric films using microwave plasma

Also Published As

Publication number Publication date
JP2013026265A (ja) 2013-02-04
CN102881549A (zh) 2013-01-16
US20130017672A1 (en) 2013-01-17
US10074517B2 (en) 2018-09-11

Similar Documents

Publication Publication Date Title
TWI745390B (zh) 減少晶圓釋氣的整合方法
US11302519B2 (en) Method of patterning a low-k dielectric film
CN102243989B (zh) 通过热处理从所蚀刻的衬底去除卤素残余物的集成方法
US8871650B2 (en) Post etch treatment (PET) of a low-K dielectric film
US7569492B1 (en) Method for post-etch cleans
US20060032833A1 (en) Encapsulation of post-etch halogenic residue
JP2005033173A (ja) 半導体集積回路装置の製造方法
KR100602960B1 (ko) 플라즈마 처리 방법, 플라즈마 에칭 방법, 고체 촬상소자의 제조 방법
KR100360399B1 (ko) 반구형입자(ｈｓｇ)막을 구비한 반도체소자의 제조방법
US10074517B2 (en) Plasma treatment method, plasma treatment apparatus, and semiconductor device manufacturing method
KR20180062441A (ko) 고 유전 상수 유전체 층 형성 방법, 이미지 센서 디바이스 및 그 제조 방법
TW200403763A (en) Manufacturing method of semiconductor integrated circuit device
WO2011158558A1 (ja) 炭化珪素半導体の洗浄方法および炭化珪素半導体の洗浄装置
JP7629875B2 (ja) 半導体装置及びエッチング方法
CN113113291A (zh) 基片清洁方法
JP2008141204A (ja) 半導体集積回路装置の製造方法
US9202706B2 (en) Method of forming pattern and solid-state image sensor device
JP5508701B2 (ja) 半導体処理装置及び処理方法
JPH05136153A (ja) 半導体装置及びその製造方法
JP3416320B2 (ja) 半導体装置の製造方法
Garnier et al. Silicon Corrosion during Selective Silicon Nitride Etch with Hot Diluted Hydrofluoric Acid
Bakhshi et al. Diversified Applications of UV-Ozone Oxide: Effective Surface Clean and High-Quality Passivation
CN120527293A (zh) 半导体结构及其形成方法、电子设备
Grant A Comparison of In-Situ Vapor/Gas Phase Cleaning with Conventional RCA based Wet Cleaning
TW202236374A (zh) 形成半導體構造的方法