CN102881549A - 等离子体处理方法、处理装置及半导体装置的制造方法 - Google Patents

等离子体处理方法、处理装置及半导体装置的制造方法 Download PDF

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Publication number
CN102881549A
CN102881549A CN2012102293826A CN201210229382A CN102881549A CN 102881549 A CN102881549 A CN 102881549A CN 2012102293826 A CN2012102293826 A CN 2012102293826A CN 201210229382 A CN201210229382 A CN 201210229382A CN 102881549 A CN102881549 A CN 102881549A
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CN
China
Prior art keywords
semiconductor substrate
plasma
plasma processing
semiconductor
plasma treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012102293826A
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English (en)
Chinese (zh)
Inventor
久保井信行
深沢正永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN102881549A publication Critical patent/CN102881549A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/0134—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN2012102293826A 2011-07-15 2012-07-03 等离子体处理方法、处理装置及半导体装置的制造方法 Pending CN102881549A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011156533A JP2013026265A (ja) 2011-07-15 2011-07-15 プラズマ処理方法、プラズマ処理装置、及び、半導体装置の製造方法
JP2011-156533 2011-07-15

Publications (1)

Publication Number Publication Date
CN102881549A true CN102881549A (zh) 2013-01-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012102293826A Pending CN102881549A (zh) 2011-07-15 2012-07-03 等离子体处理方法、处理装置及半导体装置的制造方法

Country Status (4)

Country Link
US (1) US10074517B2 (https=)
JP (1) JP2013026265A (https=)
CN (1) CN102881549A (https=)
TW (1) TW201304002A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9059092B2 (en) * 2013-09-17 2015-06-16 Taiwan Semiconductor Manufacturing Company Limited Chemical dielectric formation for semiconductor device fabrication
US9728445B2 (en) * 2014-01-22 2017-08-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming conducting via and damascene structure
CN109790313A (zh) 2016-09-30 2019-05-21 简·探针公司 经等离子体处理的表面上的组合物

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758115A (ja) * 1994-07-26 1995-03-03 Sony Corp 半導体基体の処理方法
TW445344B (en) * 1998-06-18 2001-07-11 Fujitsu Ltd System and method for discharging gas
US20080032507A1 (en) * 2006-08-07 2008-02-07 Tokyo Electron Limited Method of treating a mask layer prior to performing an etching process
US7351663B1 (en) * 2004-06-25 2008-04-01 Cypress Semiconductor Corporation Removing whisker defects
CN101740333A (zh) * 2008-11-13 2010-06-16 中芯国际集成电路制造(北京)有限公司 灰化处理方法

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US4855017A (en) * 1985-05-03 1989-08-08 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
DE4116840A1 (de) * 1991-05-23 1992-11-26 Degussa Verfahren zur abtrennung von cyanwasserstoff aus gasen und abgasen
US5843847A (en) * 1996-04-29 1998-12-01 Applied Materials, Inc. Method for etching dielectric layers with high selectivity and low microloading
US5888591A (en) * 1996-05-06 1999-03-30 Massachusetts Institute Of Technology Chemical vapor deposition of fluorocarbon polymer thin films
US5679214A (en) * 1996-06-14 1997-10-21 Taiwan Semiconductor Manufacturing Company, Ltd Method of maintaining a strong endpoint detection signal for RIE processes, via use of an insitu dry clean procedure
JP3160205B2 (ja) 1996-09-02 2001-04-25 科学技術振興事業団 半導体装置の製造方法およびその製造装置
US5983906A (en) * 1997-01-24 1999-11-16 Applied Materials, Inc. Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment
KR100311487B1 (ko) * 1997-12-16 2001-11-15 김영환 산화막식각방법
US6613681B1 (en) * 1998-08-28 2003-09-02 Micron Technology, Inc. Method of removing etch residues
US6284149B1 (en) * 1998-09-18 2001-09-04 Applied Materials, Inc. High-density plasma etching of carbon-based low-k materials in a integrated circuit
TW434816B (en) * 1998-12-28 2001-05-16 Asahi Chemical Micro Syst Method for forming contact hole
SE9903242D0 (sv) * 1999-09-13 1999-09-13 Acreo Ab A semiconductor device
US6793849B1 (en) * 2000-10-09 2004-09-21 The University Of Chicago N-type droping of nanocrystalline diamond films with nitrogen and electrodes made therefrom
US6776851B1 (en) * 2001-07-11 2004-08-17 Lam Research Corporation In-situ cleaning of a polymer coated plasma processing chamber
US7465362B2 (en) * 2002-05-08 2008-12-16 Btu International, Inc. Plasma-assisted nitrogen surface-treatment
US6897154B2 (en) * 2002-06-14 2005-05-24 Applied Materials Inc Selective etching of low-k dielectrics
US7005390B2 (en) * 2002-10-09 2006-02-28 Intel Corporation Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials
JP3757213B2 (ja) * 2003-03-18 2006-03-22 富士通株式会社 半導体装置の製造方法
JP2005033038A (ja) 2003-07-07 2005-02-03 Japan Science & Technology Agency 半導体装置及びその製造方法、並びに処理装置
US7361930B2 (en) * 2005-03-21 2008-04-22 Agilent Technologies, Inc. Method for forming a multiple layer passivation film and a device incorporating the same
US20070207275A1 (en) * 2006-02-21 2007-09-06 Applied Materials, Inc. Enhancement of remote plasma source clean for dielectric films
US7556970B2 (en) * 2006-03-27 2009-07-07 Tokyo Electron Limited Method of repairing damaged film having low dielectric constant, semiconductor device fabricating system and storage medium
JP2008000729A (ja) 2006-06-26 2008-01-10 Osaka Univ 廃液処理装置および廃液処理方法
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US7622390B2 (en) * 2007-06-15 2009-11-24 Tokyo Electron Limited Method for treating a dielectric film to reduce damage
US8962454B2 (en) * 2010-11-04 2015-02-24 Tokyo Electron Limited Method of depositing dielectric films using microwave plasma

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758115A (ja) * 1994-07-26 1995-03-03 Sony Corp 半導体基体の処理方法
TW445344B (en) * 1998-06-18 2001-07-11 Fujitsu Ltd System and method for discharging gas
US7351663B1 (en) * 2004-06-25 2008-04-01 Cypress Semiconductor Corporation Removing whisker defects
US20080032507A1 (en) * 2006-08-07 2008-02-07 Tokyo Electron Limited Method of treating a mask layer prior to performing an etching process
CN101740333A (zh) * 2008-11-13 2010-06-16 中芯国际集成电路制造(北京)有限公司 灰化处理方法

Also Published As

Publication number Publication date
JP2013026265A (ja) 2013-02-04
US20130017672A1 (en) 2013-01-17
US10074517B2 (en) 2018-09-11
TW201304002A (zh) 2013-01-16

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Application publication date: 20130116