TW201251532A - Print circuit board and method of manufacturing the same - Google Patents

Print circuit board and method of manufacturing the same Download PDF

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Publication number
TW201251532A
TW201251532A TW101102461A TW101102461A TW201251532A TW 201251532 A TW201251532 A TW 201251532A TW 101102461 A TW101102461 A TW 101102461A TW 101102461 A TW101102461 A TW 101102461A TW 201251532 A TW201251532 A TW 201251532A
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TW
Taiwan
Prior art keywords
layer
copper
copper foil
wiring board
printed wiring
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TW101102461A
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Chinese (zh)
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TWI561128B (en
Inventor
Nobuki Tanaka
Teppei Ito
Kazuya Hamaya
Kuniharu Umeno
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Sumitomo Bakelite Co
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Publication of TW201251532A publication Critical patent/TW201251532A/en
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Publication of TWI561128B publication Critical patent/TWI561128B/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/108Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1603Process or apparatus coating on selected surface areas
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1689After-treatment
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/04Wires; Strips; Foils
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02Electroplating of selected surface areas
    • C25D5/022Electroplating of selected surface areas using masking means
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/24Reinforcing the conductive pattern
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1646Characteristics of the product obtained
    • C23C18/165Multilayered product
    • C23C18/1653Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/1803Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • C23C18/1827Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment only one step pretreatment
    • C23C18/1831Use of metal, e.g. activation, sensitisation with noble metals
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/56Electroplating: Baths therefor from solutions of alloys
    • C25D3/58Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0332Structure of the conductor
    • H05K2201/0335Layered conductors or foils
    • H05K2201/0355Metal foils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1184Underetching, e.g. etching of substrate under conductors or etching of conductor under dielectrics; Means for allowing or controlling underetching
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • H05K3/425Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern
    • H05K3/427Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern initial plating of through-holes in metal-clad substrates
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Laminated Bodies (AREA)

Abstract

The present invention provides a print circuit board with an excellent yield. A method of manufacturing the print circuit board (101) of the present invention comprises: a step of separating a carrier substrate from a laminate of copper foil having the carrier substrate laminated on at least one surface of an insulating layer (102); a step of entirely or selectively forming a metal layer (115) on a copper foil layer (104), in which the metal layer is thicker than the copper foil layer (104); and a step of etching at least the copper foil layer (104) to obtain a pattern of a conductive circuit (119) composed of the copper foil layer (104) and the metal layer (115); wherein the surface (upper surface (20)) of the copper foil layer (104) adjacent to the metal layer (115) has a ratio of the peak intensity for the orientation (200) relative to the sum of the peak intensities for the orientations (111), (200), (220) and (311) being 26% or less as determined by XRD (X-ray Diffraction) in thin films.

Description

201251532 六、發明說明: 【發明所屬之技術領域】 本《明係關於印刷佈線板及印刷佈線板之製造方法。 【先前技術】201251532 VI. Description of the Invention: [Technical Field to Which the Invention Is Ascribed] This is a method of manufacturing a printed wiring board and a printed wiring board. [Prior Art]

Ik著電子機器之高機能化等要求,電子零件之高密度集成 化、進而朝高密度安《化等進展,此等所使用之高密度安裳 對應的印刷佈線板等較習知增加,並進行著小型薄、古 密度化及多層化。 阿 」乍為於此種印刷佈線板之基板上效率佳地形成高密度且 冋圖案精度之導體電路層的方法,已開始進行半加成法。使 用該半加成法的印刷佈線板之製造方法,係記載於例如專利 文獻1及專利文獻2中。 專利文獻1及2記載的製造方法,係記載有:首先,於雙 面銅落積層板上形成防鍍圖案,接著,於防鍍圖案之開口部 内填充鑛覆層後,去除該防鍵圖案。其後,以鍍覆層之圖案 作為遮罩’對下層鋼箔進行蝕刻,藉此形成由鍍覆層及銅箔 所構成的導電電路圖案。 專利文獻1 :日本專利特開2003—69218號公報 專利文獻2:日本專利特開2003403^號公報 【發明内容】 (發明所欲解決之問題^ 然而,在習知形成細微導電電路圖案的步驟中,在難以將 101102461 4 201251532 佈線形狀料於所需形狀方面尚有改善的餘地 。亦即,習知 之導電電路圖案,係由上層(錢覆層)與下層(銅幻的2層所 構成,此等之上層與下層中,其上面之面方位或構成材料相 異。因此’即使配合上層調整蝕刻條件,仍有下層中蝕刻速 度變快或變慢的情形。其結果,於俯視時,由上層(錢覆層) 之側壁起至外側的區域,可能發生依擠出而殘存一部分下層 (銅箔)的情形(以下稱為殘邊)。 然而,若為了去除該下層之殘邊而增加蝕刻量,則反而對 上層(鍍覆層)過剩地刻削,故在習知之形成導電電路圖案的 步驟中有佈線形狀不良的情形。 (解決問題之手段) 根據本發明,提供一種印刷佈線板之製造方法,其包含: 由在至少絕緣層<-面上積層有具有載體基材之銅箱的 積層板,分離上述載體基材的步驟; 於上述銅猪上’整面或選擇性地形成較上述銅落厚的金屬 層的步驟;與 藉由至少對上述銅箔進行蝕刻,得到由上述銅箔及上述金 屬層所構成的導電電路圖案的步驟; 於與上述金屬層相接之上述銅箔的面中,相對於藉XRD 薄膜法進行測定時之面方位(1U)、(2〇〇)、(22〇)及(311)之波 峰強度的和’上述面方位(2〇0)之波峰強度的比率為26%以 下。 101102461 ς 201251532 本發明者等人為了控制下層(铜箔)之蚀刻速率,進行各種 實驗,結果發現,於下層之上面中,藉由減少較面方位(m) 更容易被钮刻之面方位(200)的比率,則可得到餘刻特性較 習知更優越的下層(銅箔)。 本發明者等人即根據此種見解,發現藉由將下層之上面 (與金屬層相接之面)中之結晶面(2〇〇)的比率設為既定值以 下則可實現習知未有的良好佈線形狀,遂完成本發明。 另外’根據本發明,提供—種印刷佈線板,其具備: 絕緣層;與 導電電路圖案’係設於上述絕緣層上,將銅羯及金屬層積 層而構成; 、it金屬層相接之上述銅羯的面巾,相對於藉 蜂強产的^ ^時之面方位(111)、⑽)、(22G)及(311)之波 上述面方位(200)之波峰強度的比率為26%以 下0 根據本發g月, 位Γ200)沾,由於鋼箔上面(與金屬層相接之面)中之面方 未有之=率為既定值以下’故如上述般,容易形成習知 二效:佈線形狀,實現產率優㈣造= 根據本發明 【實施方 <】’可提供產率優綱印刷佈線板。 上述目的及罝 10Π02461 /、目的、特徵與優點,係藉由以下所述之較 201251532 佳實施形態及_之1切-步閣明。 下針對本發明之實施形態,使用圖式進行說明。又, 式中對同樣<構成要件均加註同樣符號,並適當省 略說明。 (第1實施形態) 圖1為表示第1眚# 也%態之印刷佈線板之製造方法之步驟 順序的剖面圖。第]银 ^ 貫〜形態之印刷佈線板101的製造方 /套係匕括.由在至少絕緣層102之一面上積層有具有載體 基材之銅/自的積層板(I载職之㈣積層板1G),將載體基 材(載體v自層106)分離的步驟;於鋼羯層剛上,整面或選 擇!·生地形成1()4厚的金屬層m的步驟;與藉由至 >、對銅名層104進行餘刻,得到由鋼箱層1〇4及金屬層115 所構成的導體電路119之圖案的步驟。本製造步驟中,在與 金屬層115相接之銅箔層1〇4的面(上面2〇)中,相對於藉 XRD(X-ray Diffracti〇n)薄膜法進行測定時之面方位(1丨i)、 (200)、(220)及(311)之波峰強度的和,上述面方位(2〇〇)之波 峰強度的比率為26%以下。Ik is required to increase the high-performance of electronic equipment, high-density integration of electronic components, and progress toward high-density safety, etc., and the high-density Anshang corresponding printed wiring boards are more conventionally increased, and Small, ancient, and multi-layered. A method of forming a conductor circuit layer having a high density and a high pattern accuracy on a substrate of such a printed wiring board has been started, and a semi-additive method has been started. A method of producing a printed wiring board using the semi-additive method is described in, for example, Patent Document 1 and Patent Document 2. In the manufacturing methods described in Patent Documents 1 and 2, first, a plating resist pattern is formed on the double-sided copper deposited layer, and then the anchor layer is filled in the opening portion of the plating resist pattern, and then the key pattern is removed. Thereafter, the lower layer steel foil is etched by using a pattern of a plating layer as a mask to form a conductive circuit pattern composed of a plating layer and a copper foil. Patent Document 1: Japanese Laid-Open Patent Publication No. 2003-69218. Patent Document 2: Japanese Patent Laid-Open Publication No. 2003-403 No. (Summary of the Invention) (Problems to be Solved by the Invention) However, in the conventional step of forming a fine conductive circuit pattern There is still room for improvement in the difficulty of the 101102461 4 201251532 wiring shape to the desired shape. That is, the conventional conductive circuit pattern is composed of the upper layer (money cladding) and the lower layer (two layers of copper magic). In the upper layer and the lower layer, the surface orientation or constituent material of the upper layer is different. Therefore, even if the etching condition is adjusted in conjunction with the upper layer, the etching speed in the lower layer becomes faster or slower. As a result, the upper layer is viewed from above. In the region from the side wall of the (money coating) to the outside, a part of the lower layer (copper foil) may be left by extrusion (hereinafter referred to as a residual edge). However, if the residual edge of the lower layer is removed, the amount of etching is increased. On the other hand, the upper layer (plating layer) is excessively cut, so that there is a case where the wiring shape is poor in the conventional step of forming a conductive circuit pattern. According to the present invention, there is provided a method of manufacturing a printed wiring board comprising: a step of separating the carrier substrate by a laminate having a copper box having a carrier substrate laminated on at least an insulating layer; a step of forming a metal layer thicker than the above-mentioned copper layer on the whole surface of the pig; and a step of obtaining a conductive circuit pattern composed of the copper foil and the metal layer by etching at least the copper foil; The sum of the peak intensities of the plane orientations (1U), (2〇〇), (22〇), and (311) measured by the XRD film method in the surface of the copper foil that is in contact with the metal layer The ratio of the peak intensity of the above-mentioned plane orientation (2〇0) is 26% or less. 101102461 ς 201251532 The present inventors conducted various experiments in order to control the etching rate of the lower layer (copper foil), and as a result, found that it was in the upper layer. By reducing the ratio of the face orientation (m) to the orientation of the face (200), it is possible to obtain a lower layer (copper foil) having better residual characteristics than conventionally known. Insights When the ratio of the crystal face (2〇〇) in the upper layer (the surface in contact with the metal layer) is set to be less than or equal to a predetermined value, a conventionally good wiring shape can be realized, and the present invention is completed. According to another aspect of the invention, there is provided a printed wiring board comprising: an insulating layer; a conductive circuit pattern s is disposed on the insulating layer, and a copper enamel and a metal layer are laminated; and the cymbal of the gong is connected to the metal layer The ratio of the peak intensity of the plane orientation (200) of the surface orientation (111), (10), (22G), and (311) of the ^^ when the bee is strongly produced is 26% or less. Month, located at 200), because the surface of the steel foil (the surface that is in contact with the metal layer) is not below the predetermined value, so as described above, it is easy to form a conventional two-effect: wiring shape. Excellent Yield (4) Manufacture = According to the present invention [Embodiment<]' can provide a yield superior printed wiring board. The above objectives and 目的 10Π02461 /, purpose, features and advantages are described in the following by means of the 201251532 preferred embodiment and _1. Embodiments of the present invention will be described below using the drawings. Further, in the formula, the same reference numerals are attached to the same <constitutive elements, and the description is omitted as appropriate. (First Embodiment) Fig. 1 is a cross-sectional view showing the procedure of a method of manufacturing a printed wiring board in a first state. The manufacturing method/sleeve of the printed wiring board 101 of the first embodiment is composed of a copper/self-stacked laminate having a carrier substrate on one surface of at least the insulating layer 102 (I (4) laminated layer) Plate 1G), the step of separating the carrier substrate (carrier v from layer 106); on the steel ruthenium layer, the entire surface or selection! · the step of forming a 1 () 4 thick metal layer m; > A step of patterning the copper layer 104 to obtain a pattern of the conductor circuit 119 composed of the steel box layer 1〇4 and the metal layer 115. In the manufacturing step, in the surface (upper surface 2〇) of the copper foil layer 1〇4 which is in contact with the metal layer 115, the plane orientation when measured by the XRD (X-ray Diffracti〇n) film method (1) The sum of the peak intensities of 丨i), (200), (220), and (311) is 26% or less of the peak intensity of the plane orientation (2〇〇).

另外,圖2為第1實施形態之印刷佈線板1〇1中之導體電 路119的擴大剖面圖。如2所示,本發明形態之印刷佈線 板1(H ’具備:絕緣層102 ;設於絕緣層1〇2上,由銅箔層 104及金屬層115所構成的導電電路119的圖案。於與該金 屬層115相接之銅箔層1〇4的面(上面2〇)中,相對於藉XRD 101102461 7 201251532 薄膜法進行測定時之面方位(111)、(200)、(220)及(311)之波 峰強度的和’上述面方位(200)之波峰強度的比率特定為 26%以下。 本實施形態中’ XRD薄膜法係使用入射角為〇 2〜1〇度的 條件。藉XRD薄膜法所得之波峰強度,係指相當於各面方 位之強度中的最大值。具體而言,係使用全自動粉末X射 線繞射裝置(Philips公司製’ PW1700型),以Cu-Κα射線作 為射線源而測定。依X射線之入射角(a)成為相對於試料面 (此次情況中,係已剝離載體箔的表面)為厂之角度的方式使 其入射,分別求得來自依2Θ掃描所檢測出之面方位(ul)、 (200)、(220)及(311)的繞射線的波峰積分強度者。在薄膜法 的情況,由於入射角固定,故為了區別θ,而使用a表示, 關於2Θ,係在意指計數管相對於入射線的位置方面,由於 與通常法相同’故設為相同之表示。又,薄膜法係與通常法 相異,可將X射線之知入深度抑制於所需最小限度,而可 依試料面之數奈米〜數微米的範圍内進行結晶構造解析。因 此,為了正確地評價0.1〜5.Ομηα厚之銅箔層的結晶配向,必 須進行上述薄膜法的X射線繞射。 另外’藉XRD薄膜法所測定之銅金屬(例如銅粉末)的主 要結晶面,已知係由面方位(111)、(200)、(220)及(311)所構 成。此等波峰強度之值具有與結晶面之面積成比例的關係。 根據此事實,銅箔上面之面方位(111)、(200)、(220)及(311) 101102461 8 201251532 的波锋強度之合計值,係與其上面之各種結晶面之面積的合 计值成比例。因此,相對於面方位(111)、(2〇〇)、(22〇)及(3ΐι) 之波峰強度的和’面方位()之波峰強度的比率可謂表示 面方位(2GG)相對於銅箱上面之主要結晶面的佔有面積率。 另外’銅箔之原子面密度係成為面方面(111)>面方位(2〇〇) 〉面方位(22G)的順序。原子面密度越小,通常顯示银刻容 易度的關特性變越高。因此,㈣中之㈣特性成為面方 位(220)>面方位⑽)> 面方位⑴之順序。亦即,可謂面 方位(22〇)及面方位(200)較面方位(1U)高。 根據以上,相對於藉XRD薄膜法進行測定時之面方位 (⑴)、(200)、(220)及(311)之波峰強度的和,面方位(2〇〇) 之波峰強度的比率較低,而面方位_)之佔有面積率變 低,故表示該鋼箱上面之關特性較低。如此,波峰強度之 比率係顯示與伯有面積之比率相同的技術意義,故以下,有 時將此等整合而簡稱為比率。 卜本說明書中,將對於銅箱層104中之側面24的触 ^稱為側钱刻。該側敍刻中’係對上述絕緣層102之上面於 水平方向上進行蝕刻。 另方面,將對於銅箱層1〇4之上面2〇的融刻稱為縱姓 刻。該縱㈣中,係對絕緣層⑽之上面於垂直方向進行姓 刻。 以下’針對第1實施形態之印刷佈線板之製造方法的概略 101102461 201251532 進行說明後,相較於習知之製造方法,說明此製造方法的作 用效果。又,關於第1實施形態之詳細製法條件或材料等, 將於第2實施形態之段落詳述。 第1實施形態之印刷佈線板之製造方法的步驟,係包括以 下步驟。亦即,首先,如圖1(a)所示般,準備具有载體箔之 銅箔積層板10。該具有载體箔之銅張積層板1〇中,係於絕 緣層102之雙面貼附著銅箔層104與載體箔層1〇6。接著, 如圖1(b)所示般,由具有載體箔之銅箔積層板1〇將載體箔 層106進行拉剝等而去除。接著,如圖1(c)所示般,於殘存 之銅箔層· 104上形成具有既定開口圖案的抗鍍層112。於該 抗鍍層112之開口圖案内及銅箔層1〇4上,藉鍍覆處理形成 鍍覆層(金屬層115)(圖i(d))。接著,如圖1(e)所示,去除抗 鍍層112。藉此,可於銅箔層1〇4上選擇性地形成既定之金 屬層115的圖案。此時,在未被覆金屬層115之區域中,銅 箔層104之上面20中的面方位(200)之波峰強度之比率為 26%以下。其後,如圖⑼所示,將未被覆金屬層⑴之區 域中的_層刚,藉由例如軟触刻予以去除。在此種銅镇 f1510二之去除步驟後,藉由殘存之鋼落,104與金屬廣 ’可形成導電電路119的圖案。 藉由以上步驟,得到本實施形態 圖2)。 P刷佈線板101(圖1 接著, 針對在專利讀1或2等習 101102461 知之印刷佈線板製造方 201251532 法中所發生的殘邊,使用圖3進行說明。 習知之印刷佈線板之製造方法係包括以下沭 ^驟。亦即’如 上述般’在平坦形狀之銅箔層4上形成且古 心成具有現定圖案之上層 的金屬層14 ’以該金屬層14作為遮軍, 藉姓刻予以去除。 將下層之銅箔層4 然而’根據本發明者等人的檢討,習知之印刷饰線板製造 方法中於該等鋪層4與金屬層W係在構成材料或上 面中之面方位相異’故其等之_速率亦相異。因此,習知 即使將此種蝕刻條件調整為不削除金屬層14般之條件,仍 有對銅㈣4之㈣速度變慢、或發生銅_ *又之殘邊的可 能(圖3(a))。若存在此種殘邊,則導電電路19間之間距μ(以 下稱為間距S2)變窄,難以形成細微之佈線圖案。 相對於此,以加寬此種間距S2為目的,若為了去除殘邊, 而增加對下層之銅_ 104 _刻量,則金屬層Μ被刻削 (圖3(b))。若該金屬層14之形狀發生變形,則導電電路μ 之形狀(佈線形狀)變得Μ,有發生連接不良的可能。 本發明者等人經進一步檢討,為了控制下層(銅箱)之i虫刻 速率’而由各種實驗結果發現,藉由於下狀上面20中, 使較面方位(111)更容易被射彳之面方位_)的比率減少, 則可得到側編!特性較f知優越的下層(銅箱)。 /機制尚不明確’值可_,在銅㈣HM之上面20, 藉由減低㈣特性優越之面方位()的比率,則側面24中 】〇1丨02461 201251532 面方位(200)的比率變高,故可使側面24之側蝕刻的速度提 升。 由此種見解,本實施形態中,在銅箔層1〇4之上面2〇, 將蝕刻特性優越之面方位(200)的比率設為既定值以下。藉 此,由於可提升銅箔層1〇4之側蝕刻特性,故可實現習知未 有的良好佈線形狀,其結果,可得到產率優越的印刷佈線板。 於此,針對良好之佈線形狀,使用圖2〜圖4進行說明。 圖4中’銅箔積層板1具有絕緣層2、銅箔層4、金屬層14。 所謂良好之佈線形狀,第1係指依殘邊較習知少之特性所特 定的形狀。該殘邊係如圖4所示般,於俯視時,在與金屬層 14之延伸存在方向呈正交的寬度方向,在金屬層Μ之外側 區域銅荡層4擠出形成的部分。針對是否發生該殘邊的判 斷,使用圖2、圖3進行說明。如此等圖所示,例如於剖面 視時’以上述寬度方向之銅箔層104(14)的最大寬度作為 L1 ’以上述寬度方向之金屬層115(14)之最小寬度作為L2 時,在Ll-L2 = AL大於0時,則判斷為發生殘邊。此種情 況下’在本實施形態之導電電路119中,可使al小於習知 者’較佳係L1與L2相同(圖2(a)) ’更佳係L1小於L2。在 L1小於L2時,剖面視時之銅箔層104係具有鋼搭層ι〇4 之平面方向之寬度小於金屬層115之平面方向之寬度的區 域(圖2(b))。由此種L1及L2所特定的導電電路119之形狀 可柄·為良好之佈線形狀。 101102461 12 201251532 另卜本貫滅^之所謂良好之佈線形狀,第2係指金屬 曰 之形狀依維持所需形狀之特性所特定者(圖2(a)及 ⑻)。於此所制需频,«如設計般之形狀,例如指四 角形狀等。即使在L1盥L2相Π、推而τ 1 ,、L2相同進而L1小於L2的情況, 仍使㈣層刚之侧餘刻特性提升,故可實現該種形狀。 另外,作為銅羯層104之剖面形狀,係如圖2⑻所示般, 可為具有與金屬層115相同寬度的矩形形狀,亦可如圖2(b) 所示奴為倒錐形狀。該倒錐形狀之銅羯層刚,係於俯視 時’由第1面(上面20)朝向第2面(下面22),其面積可變小 (其中’亦可因製造步驟中之偏差,而於側面24之一部分形 成凹凸)。又’如圖5所示般’在寬度方向之剖面視時,相 對於絕緣層102之垂線與側面24所形成的角㊀(逆時針之角 度)’例如較佳為G度以上幻〇度以下,更佳為丨度以上且 10度以下。 另外’作為其他之銅箱層1〇4之形狀,可為圖6⑷所示之 魚板(半圓)形狀,亦可為圖6(b)所祝_形狀。藉由使用 此種形狀之_層1G4,則可在導電電路ιΐ9中使U小於 L2 ’進而相較於倒錐形狀,可將與絕緣層⑽間之接黏面 積確保為一定以上。 另外’在本實施形態之印刷佈線板中,針對線間距(以下 稱為㈣控制性優越—事,使用圖4進行說明。 圖4所示之間距S2及間距S1,係表面相對於導電電路 101102461 13 201251532 19' 119所延伸存在的方向,呈正交方向之寬度方向中最鄰 接之導電電路19、119間的距離。 於習知之印刷佈線板之製造方法中,由於銅箔層4之蝕刻 條件係調整為不仙金屬層14之形狀,故在金屬層Μ之外 側所延伸存在的殘邊的長度,將變長或變短。為了使此種殘 邊科經常性地離間,必須如圖4(b)所示般,充分確保間距 ^換言之’間距S2必須配合L1之變動而進行調整。在 f知之印刷佈線板之製造方法中,由於此種L1/S2之控制性 較低,故難以形成細微佈線。 相對於此,在本實施形態之印刷佈線板之製造方法中,由 於可提升銅羯層刚之遍刻特性,故可在將金屬層ιΐ5 之形狀維持為所需形狀之下,控制寬度方向之_層1〇4 的寬度。因此,由於可使L1成為L2以下(亦即,使殘邊消 失)故可藉由金屬層11S之最小寬Μ決定間距si。該[2 係如上述般’可作成為設計般之值。因此,在本實施形態之 P刷佈線板之製造方法中,此種L2/S1的控制性優越。因 此’由於L/S控制性優越,故可抑制連接不良,得到可進行 細微佈線加工的印刷佈線板之製造方法。 (第2實施形態) 以下’針對第2實施形態之印刷佈線板之製造方法進行說 月第2實施形態中,係針對第丨實施形態中所省略之詳細 的製造條件或材料等進行例示。 101102461 14 201251532 第2實施形態之印刷佈線板之製造方法,係於整面或選擇 性地形成金屬層116之步驟進—步包括下述步驟各點,而與 第1實施形態相異:形成貫通由銅料104及絕緣層102 所構成之銅箔積層板1〇〇的貫通孔1〇8的步驟;於至少貫通 孔108之内壁使藥液接觸的步驟;與藉由無電解鍍覆,形成 將絕緣層102之上面上與背面上之鋼箔層電性連接的無 電解鍵覆層110的步驟。 圖7及圖8係表示第2實施形態之印刷佈線板之製造方法 的步驟順序的剖面圖。 首先’如圖7(a)所示,準備於絕緣層1〇2之兩面上貼合了 載體㈣1〇6與_層的具有載體羯之娜積層板1〇。 作為具有載體箱之銅箱積層板1〇,係例如於銅箱積層板 100之至少-面積層可剝離之載體箱層1()6。該鋼_層板 基材之具有絕緣樹脂層之絕緣層1〇2的至少— 100(以下有時稱為積層板)並無特別限^,可使用例如帶有 面積層有銅 箔層104者(圖中省略纖維基材)。該積層板可為單層,, 具有多層構造。亦即,作為積層板,可僅由核㈣^亦可 亦可使用於核層上形成了增建層者。此種積層板可應用^旦 物,例如可使用將預浸體重疊複數片者等。該預浸^並2知 別限定,例如可藉由於玻璃布等之基材中,使含有熱^無特 樹脂、硬化劑及填充劑等之樹脂組成物浸含等的 得。而且,作為積層板,可使用於至少單面上 '獲 里蝥具有載體 101102461 15 201251532 箔之極薄金屬箔並經加熱加壓成形者等。又,增建層之層間 絕緣層中’可使酿減相_材料,村為純或樹驗 成物相異。本實施形態中,絕緣層102係相當於構成核層或 增建層的絕緣樹脂層,可為單層或多層構造之任一種。關於 使用了具備增建層之積層板的例子,將藉第3實施形態進行 詳述。 構成本實施形態所使用之積層板以及層間絕緣層之樹脂 組成物,可使用已用於作為印刷佈線板之絕緣材料的公知樹 脂(以下有時稱為絕緣樹脂組成物),通常主要使用耐埶性、 耐藥品性良好的熱硬化性樹脂义述樹脂組成物並無特別限 定,較佳係至少含有熱硬化性樹脂的樹脂組成物。 作為熱硬化性樹脂’可舉例如脲(尿素)樹脂、三聚氛胺樹 脂、順丁^醯亞胺化合物、聚縣龍、不餘和 聚酿樹脂、具有料啊環之樹脂、雙㈣基奈魏亞胺化 合物、乙稀鮮基獅、乙縣“_脂、苯并環丁稀樹 脂、氰酸賴脂、環氧樹料。其中,硬化性樹脂較佳係坡 璃轉移溫度20Gt以上的組合。例如較佳係含螺環、雜學 式、三經甲基型、聯苯型、萘型1型、祕清漆型之; 或3官能以上之環氧樹脂、級g旨樹脂(包括練自旨樹脂的 預聚物)、順丁二醯亞胺化合物、笨并環丁騎脂、具有笨 并科環的樹脂。於使用環氧樹脂及/或氰酸_脂時,係 線膨脹變,卜耐熱性賴提升。又,若將環氧樹脂及/或氛 101102461 16 201251532 酉文知Μ知與向填充量之填充材組合,則有難燃性、耐熱性、 t衝犟f生、向剛性及電氣特性(低介電係數、低耗損因數)優 越的優點。於此’财熱性之提升可認為係起因於在上述熱硬 化性樹脂之硬化反應後玻璃轉#溫度成為200°C以上、硬化 後之樹脂組成物之熱分解溫度變高、於250°C以上之反應殘 渣等之低分子量減低所造成。再者,難燃性〜之提升可認為係 由於芳香族系之熱硬化性樹脂於其構造上的苯環比例較 高’故該笨環容易碳化(石墨化)’產生碳化部分所造成。 上述樹脂組成物亦可在不損及本發明效果的範圍内進一 步含有難燃劑,由環境方面而言’較佳為非鹵素系難燃劑。 作為難燃劑,可舉例如有機磷系難燃劑、有機系含氮磷化合 物、氮化合物、聚矽氧系難燃劑、金屬氫氧化物等。作為有 機磷系難燃劑,可舉例如三光(股)製之HCA、HCA-HQ、 HCA-NQ等之膦化合物,昭和高分子(股)製之HFB-2006M 等之含磷笨并呤讲化合物,北興化學工業(股)製之PPQ, Clariant(股)製之OP930’大八化學(股)製之PX200等之磷酸 酯化合物,東都化成(股)製之FX289、FX310等之含磷環氧 樹脂,東都化成(股)製之ERF001等之含磷苯氧基樹脂等。 作為有機系含氮磷化合物’可舉例如四國化成工業(股)製之 SP670、SP703等之磷酸酯醯胺化合物,大塚化學(股)公司 製之SPB100、SPE100’伏見製作所(股)製FP系列等之磷氮 化合物等。作為金屬氫氧化物’可舉例如宇部Materials(股) 101102461 17 201251532 製之UD650、UD653等之氫氧化鎂,住友化學(股)製 CUIO ’昭和電工(股)製HP_35〇等之氫氧化鋁等。Fig. 2 is an enlarged cross-sectional view showing the conductor circuit 119 in the printed wiring board 1〇1 of the first embodiment. As shown in Fig. 2, the printed wiring board 1 (H' of the present invention includes: an insulating layer 102; a pattern of a conductive circuit 119 formed of a copper foil layer 104 and a metal layer 115 provided on the insulating layer 1? The surface orientation (111), (200), (220) of the surface of the copper foil layer 1〇4 which is in contact with the metal layer 115 (the upper surface 2〇) with respect to the thin film method by XRD 101102461 7 201251532 The ratio of the peak intensity of (311) to the peak intensity of the above-mentioned plane orientation (200) is specifically 26% or less. In the present embodiment, the 'XRD thin film method uses a condition that the incident angle is 〇2 to 1 。. The peak intensity obtained by the thin film method is the maximum value corresponding to the intensity of each plane orientation. Specifically, a fully automatic powder X-ray diffraction apparatus (PW1700 type manufactured by Philips) is used, and Cu-Κα ray is used as the The incident angle (a) according to the X-ray is incident on the surface of the sample (in this case, the surface of the carrier foil that has been peeled off) at the factory angle, and is obtained by scanning from the Θ2Θ. The detected face orientations (ul), (200), (220) and (311) In the case of the thin film method, since the incident angle is fixed, in order to distinguish θ, a is used to represent θ, and 2 Θ is meant to mean the position of the counter tube with respect to the incident ray, which is the same as the usual method. Therefore, the film method is different from the conventional method, and the depth of X-rays can be suppressed to the minimum required, and the crystal structure can be performed within a range of nanometers to several micrometers of the sample surface. Therefore, in order to accurately evaluate the crystal orientation of the copper foil layer of 0.1 to 5. Ομηα thick, it is necessary to perform X-ray diffraction of the above-mentioned thin film method. Further, 'the copper metal (for example, copper powder) measured by the XRD thin film method The main crystal planes are known to be composed of plane orientations (111), (200), (220), and (311). The values of these peak intensities are proportional to the area of the crystal faces. According to this fact, copper The total value of the wave front strengths of the surface orientations of the foils (111), (200), (220), and (311) 101102461 8 201251532 is proportional to the total of the areas of the various crystal faces on the foil. Therefore, the relative The ratio of the peak intensities of the plane orientations (111), (2〇〇), (22〇), and (3ΐι) to the peak intensities of the 'plane orientations' can be said to represent the plane orientation (2GG) relative to the main crystal on the copper box. The area ratio of the surface area of the surface is also the order of the surface area (111) > plane orientation (2〇〇) 〉 plane orientation (22G). The smaller the atomic surface density, the easier it is to show silver. The degree of the degree of the degree is higher. Therefore, the (4) characteristic in (4) becomes the order of the plane orientation (220) > plane orientation (10)) > the plane orientation (1). That is, it can be said that the plane orientation (22 〇) and the plane orientation (200) are higher than the plane orientation (1 U). From the above, the ratio of the peak intensities of the plane orientations (2〇〇) to the surface orientations ((1)), (200), (220), and (311) measured by the XRD film method is low. However, the area ratio of the surface orientation _) becomes lower, which indicates that the upper characteristics of the steel box are lower. Thus, the ratio of the peak intensities shows the same technical significance as the ratio of the area of the primary area, and therefore, these are sometimes referred to as ratios. In the present specification, the contact with the side surface 24 in the copper box layer 104 is referred to as a side note. In the side, the upper surface of the insulating layer 102 is etched in the horizontal direction. On the other hand, the entanglement of the upper 2 铜 of the copper box layer 1 〇 4 is referred to as a vertical singularity. In the vertical (four), the upper surface of the insulating layer (10) is first-ordered in the vertical direction. In the following description of the manufacturing method of the printed wiring board according to the first embodiment, 101102461 201251532, the effect of the manufacturing method will be described with respect to the conventional manufacturing method. Further, the detailed production conditions, materials, and the like of the first embodiment will be described in detail in the paragraph of the second embodiment. The steps of the method of manufacturing a printed wiring board according to the first embodiment include the following steps. That is, first, as shown in Fig. 1 (a), a copper foil laminate 10 having a carrier foil is prepared. In the copper laminated laminate 1 having a carrier foil, a copper foil layer 104 and a carrier foil layer 1 are attached to both sides of the insulating layer 102. Next, as shown in Fig. 1(b), the carrier foil layer 106 is removed by stripping or the like from a copper foil laminate 1 having a carrier foil. Next, as shown in Fig. 1(c), a plating resist 112 having a predetermined opening pattern is formed on the remaining copper foil layer 104. A plating layer (metal layer 115) is formed in the opening pattern of the plating resist 112 and on the copper foil layer 1 4 by plating (Fig. i(d)). Next, as shown in Fig. 1(e), the plating resist 112 is removed. Thereby, a pattern of a predetermined metal layer 115 can be selectively formed on the copper foil layer 1〇4. At this time, in the region where the metal layer 115 is not covered, the ratio of the peak intensity of the plane orientation (200) in the upper surface 20 of the copper foil layer 104 is 26% or less. Thereafter, as shown in (9), the _ layer immediately in the region not covered with the metal layer (1) is removed by, for example, soft touch. After the removal step of the copper town f1510, the pattern of the conductive circuit 119 can be formed by the residual steel, 104 and metal. By the above steps, the present embodiment is obtained. Fig. 2). The P-wiring wiring board 101 (FIG. 1) The residual side which occurs in the method of the printed wiring board manufacturing method 201251532, which is known from the Japanese Patent Publication No. 101102461, is described with reference to FIG. 3. The manufacturing method of the conventional printed wiring board is shown in FIG. The following steps are included, that is, 'as described above' is formed on the flat-shaped copper foil layer 4 and is formed into a metal layer 14' having an upper layer of a predetermined pattern, with the metal layer 14 as a cover, The underlying copper foil layer 4 is used. However, according to the review by the inventors of the present invention, in the conventional method of manufacturing a printed wiring board, the surface orientation of the layer 4 and the metal layer W in the constituent material or the upper surface is used. The difference is also different. Therefore, even if such etching conditions are adjusted to the condition that the metal layer 14 is not removed, the speed of the copper (four) 4 (four) is slow, or copper _ * occurs. Further, there is a possibility of the residual edge (Fig. 3(a)). If such a residual edge exists, the distance μ between the conductive circuits 19 (hereinafter referred to as the pitch S2) is narrowed, and it is difficult to form a fine wiring pattern. For the purpose of widening the spacing S2, in order to remove the residual edge When the amount of copper _ 104 _ is increased to the lower layer, the metal layer 刻 is diced (Fig. 3(b)). If the shape of the metal layer 14 is deformed, the shape (wiring shape) of the conductive circuit μ becomes Μ The inventors of the present invention have further reviewed, in order to control the i-worm rate of the lower layer (copper box), it has been found from various experimental results that the lower surface 20 is used to make the plane orientation ( 111) It is easier to be reduced by the ratio of the plane orientation _) of the shot, and the lower layer (copper box) superior in characteristics to the characteristics can be obtained. / The mechanism is not clear that the value can be _, in the upper part of the copper (four) HM 20, by reducing the ratio of the (4) superior surface orientation (), the ratio of the surface orientation (200) in the side 24] 〇1丨02461 201251532 becomes higher Therefore, the speed of etching on the side of the side surface 24 can be increased. According to the above-described embodiment, in the present embodiment, the ratio of the surface orientation (200) having excellent etching characteristics is set to be equal to or less than a predetermined value on the upper surface of the copper foil layer 1〇4. As a result, since the etching characteristics of the side of the copper foil layer 1〇4 can be improved, a conventionally good wiring shape can be realized, and as a result, a printed wiring board excellent in yield can be obtained. Here, a good wiring shape will be described with reference to FIGS. 2 to 4 . In Fig. 4, the copper foil laminate 1 has an insulating layer 2, a copper foil layer 4, and a metal layer 14. The term "good wiring shape" refers to a shape that is specific to the characteristics in which the residual edge is less conventional. As shown in Fig. 4, the residual side is a portion extruded in the outer side of the metal layer 铜 in the width direction orthogonal to the direction in which the metal layer 14 extends in plan view. The determination as to whether or not the residual edge has occurred will be described with reference to Figs. 2 and 3 . As shown in the figures, for example, when the cross-sectional view is 'the maximum width of the copper foil layer 104 (14) in the width direction is L1', and the minimum width of the metal layer 115 (14) in the width direction is L2, in L1 -L2 = When AL is greater than 0, it is determined that a residual edge has occurred. In this case, in the conductive circuit 119 of the present embodiment, it is preferable that the ratio of L1 is smaller than that of the conventional L1 and L2 (Fig. 2(a))' is more preferably L1 is smaller than L2. When L1 is smaller than L2, the cross-sectional copper foil layer 104 has a region in which the width of the steel layer ι4 is smaller than the width of the metal layer 115 (Fig. 2(b)). The shape of the conductive circuit 119 specified by the types L1 and L2 is a good wiring shape. 101102461 12 201251532 In addition, the so-called good wiring shape, the second means that the shape of the metal 曰 is specific to the characteristics of the desired shape (Fig. 2 (a) and (8)). The frequency required here is «the shape of the design, for example, the shape of the square. Even when L1盥L2 is opposite to 盥1, and τ1 is the same, and L1 is the same, and L1 is smaller than L2, the remnant characteristics of the side of the (four) layer are improved, so that the shape can be realized. Further, as shown in Fig. 2 (8), the cross-sectional shape of the copper beryllium layer 104 may have a rectangular shape having the same width as the metal layer 115, or may be an inverted pyramid shape as shown in Fig. 2(b). The copper beak layer of the inverted taper shape is formed from the first surface (upper surface 20) toward the second surface (lower surface 22) in a plan view, and the area thereof may be small (where 'the deviation may be due to manufacturing steps) Concavities and convexities are formed in one of the side faces 24). Further, as shown in FIG. 5, when viewed in the cross section in the width direction, the angle formed by the perpendicular line of the insulating layer 102 and the side surface 24 (counterclockwise angle) is preferably, for example, G degrees or more. More preferably, it is above the temperature and below 10 degrees. Further, the shape of the other copper box layer 1〇4 may be a fish plate (semicircle) shape as shown in Fig. 6 (4), or may be a shape as shown in Fig. 6(b). By using the layer 1G4 of such a shape, U can be made smaller than L2' in the conductive circuit ι 9 and further in contact with the inverted tapered shape, and the adhesion area with the insulating layer (10) can be made constant or more. In addition, in the printed wiring board of the present embodiment, the line pitch (hereinafter referred to as (four) controllability is superior, and the description will be made using FIG. 4. The distance S2 and the pitch S1 shown in FIG. 4 are the surface relative to the conductive circuit 101102461. 13 201251532 19' 119 The direction in which the extension extends is the distance between the most adjacent conductive circuits 19 and 119 in the width direction of the orthogonal direction. In the conventional method of manufacturing a printed wiring board, the etching condition of the copper foil layer 4 It is adjusted to the shape of the metal layer 14, so the length of the residual edge extending on the outer side of the metal layer will become longer or shorter. In order to make such a residual edge frequently separated, it must be as shown in Fig. 4. As shown in (b), it is necessary to sufficiently ensure the pitch "in other words, the pitch S2 must be adjusted in accordance with the fluctuation of L1. In the method of manufacturing a printed wiring board, it is difficult to form such a controllability of L1/S2. In contrast, in the method of manufacturing a printed wiring board according to the present embodiment, since the copper bead layer can be improved in shape, the shape of the metal layer ι 5 can be maintained under a desired shape. The width of the layer _4 in the width direction is made. Therefore, since L1 can be made L2 or less (that is, the residual edge disappears), the spacing si can be determined by the minimum width of the metal layer 11S. In the method of manufacturing a P-wiring wiring board according to the present embodiment, such L2/S1 has superior controllability. Therefore, since L/S controllability is excellent, it can be suppressed. In the second embodiment, the method for manufacturing a printed wiring board that can be subjected to fine wiring processing is described in the second embodiment. The detailed manufacturing conditions, materials, and the like which are omitted in the embodiment are exemplified. 101102461 14 201251532 The manufacturing method of the printed wiring board according to the second embodiment is a step of forming the metal layer 116 over the entire surface or selectively. The steps of the steps are different from those of the first embodiment: a step of forming a through hole 1〇8 penetrating through the copper foil laminate 1〇〇 composed of the copper material 104 and the insulating layer 102; at least the inner wall of the through hole 108 Make medicine a step of contacting; and forming an electroless bond layer 110 electrically connecting the upper surface of the insulating layer 102 and the steel foil layer on the back surface by electroless plating. FIGS. 7 and 8 show the second embodiment. A cross-sectional view of a step sequence of a method of manufacturing a printed wiring board of the form. First, as shown in Fig. 7(a), a carrier (4) 1 and 6 and a layer having a carrier are bonded to both surfaces of the insulating layer 1〇2. As a copper box laminate having a carrier case, for example, a carrier layer 1 () 6 of a peelable at least-area layer of the copper box laminate 100. The steel_layer substrate At least 100 (hereinafter sometimes referred to as a laminate) of the insulating layer 1 2 having an insulating resin layer is not particularly limited, and for example, a copper foil layer 104 having an area layer may be used (the fibrous substrate is omitted in the drawing) ). The laminate may be a single layer having a multilayer construction. That is, as the laminated board, it is also possible to use only the core (four) or the additional layer formed on the core layer. Such a laminate can be applied, for example, a person who overlaps a plurality of prepregs or the like can be used. The prepreg is not limited. For example, a resin composition containing a thermal resin, a curing agent, a filler, or the like may be impregnated into a substrate such as a glass cloth. Further, as the laminated sheet, it is possible to use an extremely thin metal foil having a carrier of 101101461 15 201251532 on at least one side and heat-press molding. In addition, the interlayer insulation layer of the additional layer can make the phase-reducing _ material, the village is pure or the tree test is different. In the present embodiment, the insulating layer 102 corresponds to an insulating resin layer constituting the core layer or the buildup layer, and may be either a single layer or a multilayer structure. An example in which a laminated board having an additional layer is used will be described in detail with reference to the third embodiment. As the resin composition constituting the laminate and the interlayer insulating layer used in the present embodiment, a known resin (hereinafter sometimes referred to as an insulating resin composition) which is used as an insulating material for a printed wiring board can be used. The thermosetting resin composition having a good chemical resistance and chemical resistance is not particularly limited, and is preferably a resin composition containing at least a thermosetting resin. Examples of the thermosetting resin include, for example, urea (urea) resin, trimeric amine resin, cis-imine compound, polyxian, non-residual and poly-resin, resin having a ring, and bis(tetra) group. Neviimide compound, Ethyl fresh lion, B County "_lipid, benzocyclobutylene resin, cyanate lysate, epoxy tree material. Among them, the curable resin is preferably a glass transition temperature of 20 Gt or more. For example, it is preferably a spiro ring, a hybrid, a trimethyl form, a biphenyl type, a naphthalene type 1, a secret varnish type; or a trifunctional or higher epoxy resin, a grade g resin (including a practice) Self-adhesive resin prepolymer), cis-butadiene imine compound, stupid cyclopentide, resin with stupid ring. When using epoxy resin and / or cyanate - lipid, the line expansion The heat resistance of the heat is improved. In addition, if the epoxy resin and/or the epoxy resin and/or the atmosphere are combined with the filling material, the flame retardancy, heat resistance, t-carrying, and Advantages of rigidity and electrical characteristics (low dielectric constant, low loss factor). The glass transition temperature of the thermosetting resin is 200° C. or higher, and the thermal decomposition temperature of the resin composition after curing becomes high, and the low molecular weight of the reaction residue at 250° C. or higher is reduced. Further, the improvement of the flame retardancy is considered to be caused by the fact that the aromatic thermosetting resin has a high proportion of the benzene ring in its structure, so that the stupid ring is easily carbonized (graphitized) to cause carbonization. The resin composition may further contain a flame retardant in a range that does not impair the effects of the present invention, and is preferably a non-halogen flame retardant from the environmental viewpoint. As the flame retardant, for example, an organic phosphorus system is difficult. A flammable agent, an organic nitrogen-containing phosphorus compound, a nitrogen compound, a polyfluorene-based flame retardant, a metal hydroxide, etc. Examples of the organic phosphorus-based flame retardant include HCA and HCA-HQ manufactured by Sanguang Co., Ltd. A phosphine compound such as HCA-NQ, a phosphorus-containing stupid compound of HFB-2006M manufactured by Showa Polymer Co., Ltd., a PPQ manufactured by Beixing Chemical Industry Co., Ltd., and an OP930 'Da Ba Chemical Co., Ltd. manufactured by Clariant Co., Ltd. (shared) PX200 and other phosphoric acid a compound, a phosphorus-containing epoxy resin such as FX289 or FX310 manufactured by Toshiro Kasei Co., Ltd., a phosphorus-containing phenoxy resin such as ERF001 manufactured by Tosho Kasei Co., Ltd., etc. As an organic nitrogen-containing phosphorus compound, for example, four Phosphate decylamine compounds such as SP670 and SP703 manufactured by Guohuacheng Industrial Co., Ltd., SPB100 manufactured by Otsuka Chemical Co., Ltd., SPE100's FP series of FP series manufactured by Fushimi Co., Ltd., etc. For example, the hydroxides such as UD650 and UD653 manufactured by Ube Materials 101102461 17 201251532, and the aluminum hydroxide of CUIO 'Showa Electric Co., Ltd.' manufactured by Sumitomo Chemical Co., Ltd., such as HP_35〇, may be used.

作為上述樹脂組成物所使用之環氧樹脂,可舉例如雙酚A 型環氧樹脂、雙酚F型環氧樹脂、雙酚E型環氧樹脂、雙 酚S型環氧樹脂、雙酚M型環氧樹脂、雙酚p型環氧樹脂、 雙酚Z型環氧樹脂等之雙酚型環氧樹脂,苯酚酚醛清漆型 裱氧樹脂、曱酚酚醛清漆型環氧樹脂等之酚醛清漆型環氧樹 脂,聯苯型環氧樹脂、茬型環氧樹脂、聯苯芳烷基型環氧樹 脂等之芳基伸烷氧基環氧樹脂,萘酚型環氧樹脂、萘二醇型 環氧樹月旨、2官能至4官能環氧基型萘樹脂、輯型環氧樹 月曰、雙萘基型環氧樹脂、萘芳烷基型環氧樹脂等之萘型環氧 樹脂,葱型環氧樹脂、苯氧基型環氧樹脂、二環戊二稀型環 氧樹脂、降_型環氧樹脂、金剛烧基環氧樹脂、第童 樹脂等。 作為環氧樹脂,可單獨使用此等中之一種,亦可併用 不同重量平均分子量的2種以上。又,亦可將此等中:ι 種或2種以上、與其等之預聚物併用。 此等環氧樹脂中,較佳係芳基伸烧基型環氧樹脂。藉此 可進一步提升吸濕焊錫耐熱性及難燃性。 曰 _芳基㈣基型環氧樹脂,係指於重複單位中具有叫 ^上芳基魏基的環氧樹脂。可舉例如㉞環氧樹H 基-亞甲基型環氧樹脂等。此等之中,較佳為聯苯基二亞 101102461 201251532 基型環氧樹脂。聯苯基二亞曱基型環氧樹脂可由例如下述— 般式(1)所示。又,作為聯苯基二亞甲基型環氧樹脂,可舉 例如日本化藥(股)製之 NC-3000、NC-3000L、NO3000_FH。 [化1]Examples of the epoxy resin used in the resin composition include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol E type epoxy resin, bisphenol S type epoxy resin, and bisphenol M. Bisphenol type epoxy resin such as epoxy resin, bisphenol p type epoxy resin, bisphenol Z type epoxy resin, novolac type of phenol novolac type oxime resin, nonylphenol novolak type epoxy resin Epoxy resin, biphenyl type epoxy resin, fluorene type epoxy resin, biphenyl aralkyl type epoxy resin, etc., aryl alkoxy epoxy resin, naphthol type epoxy resin, naphthalene glycol type epoxy A naphthalene type epoxy resin such as a bifunctional to bifunctional to 4-functional epoxy type naphthalene resin, a epoxidized resin, a bis-naphthyl epoxy resin, or a naphthyl aralkyl epoxy resin. Epoxy resin, phenoxy epoxy resin, dicyclopentadiene epoxy resin, reduced-type epoxy resin, diamond-based epoxy resin, and children's resin. As the epoxy resin, one of these may be used alone, or two or more kinds of different weight average molecular weights may be used in combination. Further, these or the like may be used in combination of two or more kinds of prepolymers. Among these epoxy resins, an aryl-based epoxy resin is preferred. Thereby, the heat resistance and flame retardancy of the moisture absorption solder can be further improved.曰 _Aryl (tetra)-based epoxy resin refers to an epoxy resin having an aryl group in the repeating unit. For example, a 34-epoxy H-methylene type epoxy resin can be mentioned. Among these, a biphenyl diol 101102461 201251532 base epoxy resin is preferred. The biphenyl diindenylene type epoxy resin can be represented, for example, by the following formula (1). Further, examples of the biphenyl dimethylene type epoxy resin include NC-3000, NC-3000L, and NO3000_FH manufactured by Nippon Kayaku Co., Ltd. [Chemical 1]

由上述-般式⑴所示之聯苯基二亞甲基型環氧樹脂的平 均重複I位η為任意整數。n之下限並無特別限^,較佳為 1以上、特佳2以上。若η過小,則因聯苯基二亞甲基型環 氧樹脂容易結晶化、對通用溶媒之溶解性較低,故有操作困 難的情形。η之上限並無特別限定,較佳為10以下、特佳5 以下。若η過大,則有樹脂之流動性降低、成為成形不良等 之原因的情形。 熱膨脹性 作為上述以外之環氧樹脂,較佳係具有縮合環芳香族烴構 造的祕清漆型環氧樹脂。藉此,可進—步提升耐熱性、低 具有縮合環芳香族烴構造的祕清漆型環氧樹脂,有如 萘、葱、菲、苯四稠、聯三伸苯及笨并邮吵岭 其他具有縮合環芳香_構造的祕清漆型魏樹脂。且有 縮合環芳香族烴構造之_清漆型環氧樹脂,由於使複數芳 香環規則性地配列,故低熱膨脹性優越。又,由於玻璃轉移 溫度亦較高,故耐熱性優越。再者,由於重複構造之分子量 101102461 201251532 較大,故難燃性較習知之齡醒·清漆型環氧樹脂優越,藉由與 氰酸酯樹脂組合,則可改善氰酸酯樹脂之脆弱性的弱點。因 此,藉由併用氰酸酯樹脂,則因玻璃轉移溫度進一步變高, 故無鉛對應的安裝可靠性優越。 具有縮合環芳香族烴構造的酚醛清漆型環氧樹脂,係由苯 酚類化合物與甲醛類化合物及縮合環芳香族烴化合物所合 成之、將酚醛清漆型苯酚樹脂經環氧基化者。 苯酚類化合物並無特別限定,可舉例如苯酚、鄰甲酚、間 曱酚、對曱酚等之甲酚類,2,3-二曱酚、2,4-二曱酚、2,5-二曱酚、2,6-二曱酚、3,4-二曱酚、3,5-二曱酚等之二曱酚類, 2,3,5-三曱基酚等之三曱基酚類,鄰乙基酚、間乙基酚、對 乙基酚等之乙基酚類,異丙基酚、丁基酚、第三丁基酚等之 烷基酚類,鄰苯基酚、間苯基酚、對苯基酚、鄰苯二酚、1,5-二羥基萘、1,6-二羥基萘、2,7-二羥基萘等之萘二醇類,間 苯二酚、鄰苯二酚、氫醌、五倍子酚、氟甘胺酸等之多價酚 類,烷基間苯二酚、烷基鄰苯二酚、烷基氫醌等之烷基多價 酚類。此等之中,由成本面及對分解反應造成之效果而言, 較佳為苯酿。 醛類化合物並無特別限定,可舉例如曱醛、對曱醛、三。山、 乙醛、丙醛、聚曱醛、三氯乙醛、六亞曱基四胺、糠醛、乙 二醛、正丁基醛、己醛、烯丙基醛、苯醛、丁烯醛、丙烯醛、 三聚曱醛、苯基乙醛、鄰曱苯甲醛、水楊醛、二羥基苯醛、 101102461 20 201251532 三羥基苯醛、4-羥基_3-曱氧基醛對甲醛等。 縮合環芳香族烴化合物並無特別限定,可舉例如曱氧基 萘、丁氧基萘等之萘衍生物,曱氧基蒽等之蒽衍生物,甲氧 基菲等之菲衍生物,其他稠四苯衍生物、筷衍生物、芘衍生 物、聯三伸苯衍生物及四苯衍生物等。 具有縮合環芳香族烴構造的酚醛清漆型環氧樹脂,並無特 別限定,可舉例如曱氧基萘改質鄰曱酚酚醛清漆環氧樹脂、 丁氧基萘改質曱基(對)曱酚酚醛清漆環氧樹脂及曱氧基萘 改質酚醛清漆環氧樹脂等。此等之中,較佳係具有下述式(2) 所示之縮合環芳香族烴構造的酚醛清漆型環氧樹脂。又,作 為具有縮合環芳香族烴構造的盼醛清漆型環氧樹脂,可舉例 如 DIC(股)製之 HP-5000。 [化2]The average repeating I position η of the biphenyl dimethylene type epoxy resin represented by the above formula (1) is an arbitrary integer. The lower limit of n is not particularly limited, and is preferably 1 or more, particularly preferably 2 or more. When η is too small, the biphenyl dimethylene type epoxy resin is easily crystallized and has low solubility in a general-purpose solvent, so that it is difficult to handle. The upper limit of η is not particularly limited, but is preferably 10 or less, and particularly preferably 5 or less. When η is too large, the fluidity of the resin may be lowered to cause a molding failure or the like. Thermal expansion property The epoxy resin other than the above is preferably a secret varnish type epoxy resin having a condensed cyclic aromatic hydrocarbon structure. Thereby, it is possible to further improve the heat-resistance and low-viscosity epoxidized epoxy resin having a condensed-ring aromatic hydrocarbon structure, such as naphthalene, onion, phenanthrene, benzene-thick, bis-benzene and stupid. Condensed ring aromatic _ structured secret varnish type Wei resin. The varnish type epoxy resin having a condensed ring aromatic hydrocarbon structure has a low thermal expansion property because the plural aromatic rings are regularly arranged. Further, since the glass transition temperature is also high, heat resistance is excellent. Furthermore, since the molecular weight of the repeating structure is 101102461 201251532, the flame retardancy is superior to the conventional awake-clear type epoxy resin, and the combination with the cyanate resin can improve the fragility of the cyanate resin. weakness. Therefore, by using a cyanate resin in combination, the glass transition temperature is further increased, so that the lead-free mounting reliability is excellent. A novolac type epoxy resin having a condensed cyclic aromatic hydrocarbon structure is a mixture of a phenolic compound, a formaldehyde compound, and a condensed cyclic aromatic hydrocarbon compound, and a phenol novolak type phenol resin is epoxyated. The phenol compound is not particularly limited, and examples thereof include phenol such as phenol, o-cresol, m-nonylphenol, p-nonylphenol, 2,3-diinol, 2,4-dioxan, and 2,5-. Dinonylphenols such as diterpene phenol, 2,6-dioxanol, 3,4-dioxanol, 3,5-dioxanol, tridecylphenol such as 2,3,5-tridecylphenol Ethylphenols such as o-ethylphenol, m-ethylphenol, p-ethylphenol, alkylphenols such as isopropylphenol, butylphenol, and tert-butylphenol, o-phenylphenol, and Naphthalene glycols such as phenylphenol, p-phenylphenol, catechol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,7-dihydroxynaphthalene, resorcinol, ortho Polyvalent phenols such as hydroquinone, hydroquinone, gallic phenol, fluoroglycine, and alkyl polyvalent phenols such as alkyl resorcinol, alkyl catechol, and alkyl hydroquinone. Among these, benzene is preferred from the cost side and the effect on the decomposition reaction. The aldehyde compound is not particularly limited, and examples thereof include furfural, p-nonaldehyde, and trisole. Mountain, acetaldehyde, propionaldehyde, polyfurfural, trichloroacetaldehyde, hexamethylenetetramine, furfural, glyoxal, n-butyl aldehyde, hexanal, allyl aldehyde, benzaldehyde, crotonaldehyde, Acrolein, trimeric furfural, phenylacetaldehyde, o-benzaldehyde, salicylaldehyde, dihydroxybenzaldehyde, 101102461 20 201251532 trihydroxybenzaldehyde, 4-hydroxy-3-hydroxylaldehyde to formaldehyde, and the like. The condensed ring aromatic hydrocarbon compound is not particularly limited, and examples thereof include a naphthalene derivative such as a nonoxynaphthalene or a butoxynaphthalene, an anthracene derivative such as an anthracene oxime, or a phenanthrene derivative such as methoxyphenanthrene. A thick tetraphenyl derivative, a chopstick derivative, an anthracene derivative, a triazine derivative, and a tetraphenyl derivative. The novolac type epoxy resin having a condensed ring aromatic hydrocarbon structure is not particularly limited, and examples thereof include a decyloxynaphthalene-modified o-nonphenol novolac epoxy resin and a butoxynaphthalene-modified fluorenyl group (p-). Phenolic novolac epoxy resin and decyloxy naphthalene modified phenolic varnish epoxy resin. Among these, a novolac type epoxy resin having a condensed ring aromatic hydrocarbon structure represented by the following formula (2) is preferred. Further, as the acetal varnish type epoxy resin having a condensed cyclic aromatic hydrocarbon structure, for example, HP-5000 manufactured by DIC Co., Ltd. can be used. [Chemical 2]

(式中,Ar為縮合環芳香族烴基,R彼此可為相同或相異, 為選自氫原子、碳數1以上且10以下之烴基或ώ元素、苯 基、苄基等之芳香基及含有環氧丙基醚之有機基的基,η、ρ 及q為1以上之整數,又,p、q之值可於每重複單位中為 相同或相異。) 101102461 21 201251532 [化3](wherein Ar is a condensed cyclic aromatic hydrocarbon group, and R may be the same or different from each other, and is a hydrocarbon group selected from a hydrogen atom, a carbon number of 1 or more and 10 or less, an aromatic group such as a fluorene element, a phenyl group or a benzyl group; The group of the organic group containing a glycidyl ether, η, ρ and q are integers of 1 or more, and the values of p and q may be the same or different in each repeating unit.) 101102461 21 201251532 [Chemical 3]

Cam)Cam)

(Ar3)(Ar3)

(Ar2)(Ar2)

(Ar4) ⑶ (式⑺中之Ar係式⑶中之⑽)〜(ΑΜ)所示的構造,式(別 之R彼此可為相同或相異,為選自氫原子、碳數^上卫 10以下之_或_元素、苯基、¥基等之芳香基及含有拜 氧丙基醚之有機基的基。) 广=作為上述以外之環氧樹脂,較佳係萘酚型環氧樹 月:奈一醇型ί辰氧樹月旨、2官能至4官能環氧基型蔡樹脂、 萘趟型環氧樹脂等之萘型環氧樹脂。藉此,可進—步提升耐 熱性、低觸祕。又,由於萘環之π_π t疊效果較苯環高, 故尤其是低_脹性、低熱收縮性優越。再者,由於多環構 &,故剛直效果向,由於玻璃轉移溫度特別高,故迴焊前後 之熱收縮變化較小。 奈酚型環氧樹脂可由例如下述一般式(4-1)所示。又,作為 蔡紛型環氧樹脂,可舉例如新曰鐵化學(股)製之esn_375。 奈二醇型環氧樹脂可由例如下述式(4 - 2)所表示。作為萘二 醇型環氧樹脂,可舉例如DIC(股)製之HP-4032D。 2官能至4官能環氧基型萘樹脂,可由例如下述式 (4_3)(4-4)(4-5)所示。作為2官能至4官能環氧基型萘樹脂, 101102461 22 201251532 可舉例如DIC(股)製之HP-4700、HP-4770。 萘醚型環氧樹脂可由例如下述一般式(4-6)所示。作為萘醚 型環氧樹脂,可舉例如DIC(股)製之HP-6000。 [化4](Ar4) (3) The structure shown by (10) in the formula (7) (10) to (ΑΜ) in the formula (3), (wherein R may be the same or different from each other, and is selected from a hydrogen atom, a carbon number ^ An aryl group of 10 or less, an aryl group such as a phenyl group or a phenyl group, and a group containing an organic group of a benzoxypropyl ether.) Wide = epoxy resin other than the above, preferably a naphthol type epoxy tree Month: a naphthalene type epoxy resin such as a naphthyl alcohol type, a bifunctional to a tetrafunctional to tetrafunctional epoxy type Cai resin, or a naphthoquinone type epoxy resin. In this way, heat resistance and low touch can be further improved. Further, since the π_π t stacking effect of the naphthalene ring is higher than that of the benzene ring, it is particularly low in low expansion and low in heat shrinkage. Furthermore, due to the polycyclic structure & the straight-right effect, since the glass transition temperature is particularly high, the change in heat shrinkage before and after reflow is small. The naphthol type epoxy resin can be represented, for example, by the following general formula (4-1). Further, as the Cai-type epoxy resin, for example, esn_375 manufactured by Shinkai Iron Chemical Co., Ltd. can be mentioned. The naphthalene type epoxy resin can be represented, for example, by the following formula (4-2). The naphthalene diol type epoxy resin may, for example, be HP-4032D manufactured by DIC Co., Ltd. The bifunctional to 4-functional epoxy type naphthalene resin can be represented, for example, by the following formula (4-3) (4-4) (4-5). As a bifunctional to tetrafunctional epoxy type naphthalene resin, 101102461 22 201251532 is exemplified by HP-4700 and HP-4770 manufactured by DIC Corporation. The naphthene ether type epoxy resin can be represented, for example, by the following general formula (4-6). As the naphthene ether type epoxy resin, for example, HP-6000 manufactured by DIC Co., Ltd. can be mentioned. [Chemical 4]

(4-1) (η表示平均1以上且6以下的數,R表示環氧丙基或碳數1 以上且10以下的烴基。) [化5](4-1) (η represents a number of 1 or more and 6 or less on average, and R represents a glycidyl group or a hydrocarbon group having 1 or more and 10 or less carbon atoms.)

[化7] 101102461 23 201251532 (4-6) (::數:表示氫原子或曱基’ R2分別獨立表示氫原子、碳 其,〇及4之烧基、芳烧基、蔡基或含有環氧丙基醚基的萘 I上。)m分別為。〜2之整數,且。或m之至少任-者為1 氰成物所使用之氰酸@旨樹脂,可藉由例如使自化 例,㈣與笨賴進行反應而獲得°作為氰酸§旨樹脂的具體 如笨酴祕清漆魏酸§旨樹脂、甲㉟雜清漆型 ㈣^冰等之祕祕型氰動旨樹脂,萘料絲型氰酸 Θ曰孩J月曰、一xm丄、 衣一稀型氰酸酯樹脂、聯苯基氰酸酯樹脂、雙 酴A型氰酸S旨樹脂、雙盼AD型氰酸醋樹脂、四甲基雙紛F 里氰酉夂^脂等之雙紛型氰酸g旨樹脂等。 匕等之中,較佳係含有酚醛清漆型氰酸酯樹脂、萘酚芳烷 氰SxSa樹脂、二環戊二稀型氰酸賴脂、聯苯基氛酸酿 再者4c佳係樹脂組成物係於樹脂組成物之總固形份 中δ有10重量%以上的氰酸酯樹脂。藉此,可提升預浸體 之耐熱性(玻㈣移溫度、熱分解溫度)。又 ,可使預浸體之 熱膨脹係數(尤其是預浸體厚度方向之熱膨脹係數)降低。若 預’又體厚度方向之熱膨脹係數降低,則可減輕多層印刷佈線 的應力應k。再者,於具有細微之層間連接部的多層印刷佈 101102461 24 201251532 線板中, ’可大帽提升其連接可靠性。 作為上述樹脂組成物中所使用之g 中的較佳者, 月曰組成物中所使用之酚醛清漆型氰酸酯樹脂 可舉例如下式(5)所示的酚醛清漆型氰酸酯樹 脂。較佳係組合使用重量平均分子量為2000以上、較佳 2,000〜1〇,〇〇〇、更佳2,2〇0〜3,5〇〇之式(5)所示的酚醛清漆型 氛酸醋樹脂與重量平均分子量為15〇〇以下、較佳2004,300 之式(5)所不的酚醛清漆型氰酸酯樹脂(以下,在未特別註明 之下,「〜」係表示包含上限值與下限值又,本實施形態 中’重量平均分子量係藉聚苯乙烯換算之凝膠渗透層析法所 測定之值。 [化8]101102461 23 201251532 (4-6) (:: number: represents a hydrogen atom or a sulfhydryl group) R2 independently represents a hydrogen atom, a carbon atom, a ruthenium and a ruthenium group, an aryl group, a zeoliyl group or a ring-containing group. The naphthyl I of the oxypropyl ether group is m). An integer of ~2, and. Or at least any one of m is a cyanic acid-based resin used for the cyanide compound, and can be obtained, for example, by reacting the self-chemical example, (4) with the ruthenium, and obtaining a specific resin such as cyanate as a cyanate resin. Secret varnish Wei acid § resin, A 35 miscellaneous varnish type (four) ^ ice and other secret type cyanine dynamic resin, naphthalene silk type cyanate Θ曰 child J 曰, a xm 丄, clothing a thin cyanate Resin, biphenyl cyanate resin, bismuth A-type cyanate S resin, double-prevention AD type cyanate resin, tetramethyl bisphosphonate, etc. Resin, etc. Among the hydrazines, etc., it is preferred to contain a novolac type cyanate resin, a naphthol aralkyl cyanide SxSa resin, a dicyclopentadienyl cyanate lysate, a biphenyl phthalic acid granule and a 4c excellent resin composition. The cyanate resin having a δ content of 10% by weight or more based on the total solid content of the resin composition. Thereby, the heat resistance (glass (four) shift temperature, thermal decomposition temperature) of the prepreg can be improved. Further, the coefficient of thermal expansion of the prepreg (especially the coefficient of thermal expansion in the thickness direction of the prepreg) can be lowered. If the coefficient of thermal expansion in the direction of the bulk thickness is lowered, the stress of the multilayer printed wiring should be reduced. Further, in the multi-layer printing cloth 101102461 24 201251532 wire board having a fine interlayer connection portion, the large cap can improve the connection reliability. The novolak-type cyanate resin used in the composition of the present invention is preferably a novolac type cyanate resin represented by the following formula (5). Preferably, a novolak type vinegar of the formula (5) having a weight average molecular weight of 2,000 or more, preferably 2,000 to 1 Torr, 〇〇〇, more preferably 2,2 〇 0 to 3, and 5 Å is used in combination. The resin and the novolac type cyanate resin having a weight average molecular weight of 15 Å or less, preferably not more than the formula (5) of 2004, 300 (hereinafter, unless otherwise specified, "~" means that the upper limit is included. Further, in the present embodiment, the weight average molecular weight is a value measured by gel permeation chromatography in terms of polystyrene.

式(5)中,η表示〇以上的整數。 另外’作為氰酸g旨樹脂,亦摘义 亦適合使用下述一般式(6)所示In the formula (5), η represents an integer of 〇 or more. In addition, as a cyanate resin, it is also suitable to use the following general formula (6).

樹脂興氰醱進仃縮合而得者。—把/、The resin is obtained by condensing cyanohydrin into the hydrazine. - put /,

101102461 25 201251532 成時不易發生分子内聚合,水洗時之分液性提升,玎防止產 量降低。 [化9]101102461 25 201251532 It is not easy to cause intramolecular polymerization at the time of the formation, and the liquid separation property during washing is improved, and the production is prevented from being lowered. [Chemistry 9]

式(6)中,R表示氫原子或曱基,尺可為相同或相異,n表 示1以上的整數。 另外,作為氰酸酯樹脂,亦適合使用下述一般式(7)所示 之一環戊二烯型氰酸酯樹脂。下述一般式(7)所示之二環戊 二烯型氰酸酯樹脂,較佳係下述一般式(7)之η為〇以上且8 以下。在η為8以下時,樹脂黏度不變高,對基材之浸含性 良好,可防止作為積層板的性能降低。又,藉由使用二環戊 二烯型氰酸酯樹脂,則低吸濕性及耐藥品性優越。 [化 10]In the formula (6), R represents a hydrogen atom or a fluorenyl group, the scales may be the same or different, and n represents an integer of 1 or more. Further, as the cyanate resin, a cyclopentadiene type cyanate resin represented by the following general formula (7) is also suitably used. The dicyclopentadiene type cyanate resin represented by the following general formula (7) is preferably 〇 or more and 8 or less in the following general formula (7). When η is 8 or less, the resin viscosity is not high, and the impregnation property to the substrate is good, and the performance as a laminate can be prevented from being lowered. Further, by using a dicyclopentadiene type cyanate resin, it is excellent in low hygroscopicity and chemical resistance. [化10]

熱硬化性樹脂為環氧樹 另外,樹餘^物亦可進一步含有硬化促進劑 。例如,若 9或亂酸酯樹脂,則可使用苯酚樹脂 101102461 26 201251532 曰或虱酸酯树脂的硬化促進 限定,可擻w本酚樹脂並無特別 举例如苯酴酴酸:清漆樹脂 酚AW㈣清漆樹脂、雙 、主㈣〇,〜、娜、芳基躲基㈣料_脂等之祕 二㈣樹脂,未改質之可溶祕苯紛樹脂、藉由桐油、 亞棘7、核桃仁油等經改㈣油改質可溶祕苯_脂等 之讀祕型苯_脂等。作為上述苯紛樹脂,較佳係苯紛 祕清漆或甲苯祕清漆韻H由㈣焊錫_性之 觀點而言’較佳為聯笨芳絲改質料树清漆樹脂。 j等之中可單獨使用1種,亦可併用具有不同重量平均分 子量的2種以上’或可们種或2種以上與其等之預聚物併 用 由 Λ 上述硬化促進劑並無特別限定,可舉例如萘酸鋅、蔡酸 始、辛酸錫、辛_、雙乙醯基丙驗(Π)、三乙酿基丙綱 鈷(III)等之有機金屬鹽,三乙基胺、三丁基胺、二吖雙環 [2,2,2]辛烧等之3、級胺類,2_曱基啼嗤、2•苯基口米。坐、2_苯 基斗甲基咪唑、2_乙基斗乙基咪唑、1-苄基_2_甲基咪唑、 1-节基-2·苯基Μ、2_十—基㈣、1•氰基乙基_2·乙基·4_ 甲基《米。坐、1-氰基乙基_2_十一基坐、2_笨基斗曱基_5_經 基哺唑、2-苯基-4,5_二經基㈣、2,3_二氣]Η_鱗(i,2_a) 苯并咪嗤等之__,麵、雙^、壬基_之純合物, 醋酸、苯曱酸、水揚酸、對曱苯賴等之有機酸,鏽鹽化合 物等或其等之混合物。包括此等之中的魅物,可單獨使用 101102461 27 201251532 1種,亦可包括其等之衍生物而併用2種以上。 另外,上述熱硬化性樹脂中,由耐熱性的觀點而言,亦可 含有順丁烯二醯亞胺化合物。順丁烯二醯亞胺化合物若為於 1分子中具有1個以上順丁烯二醯亞胺基的化合物,則無特 別限定。作為其具體例,可舉例如N—苯基順丁烯二醯亞胺、 N-經基苯基順丁烯二醢亞胺、雙(‘順丁稀二醯亞胺苯基)曱 烧、2,2-雙{4-(4-順丁烯二醯亞胺笨氧基)苯基丨丙烷、雙(3,5_ 一曱基-4-順丁烯二醯亞胺苯基)曱烧、雙(3_乙基_5_甲基_4_ 順丁烯二醯亞胺苯基)曱烷、雙(3,5_二乙基_4_順丁烯二醯亞 胺苯基)甲烧、聚苯基甲烧順丁稀二醯亞胺、此等順丁稀二 醯亞胺化合物之預聚物、或順丁烯二醯亞胺化合物與胺化合 物的預聚物等。 另外,上述熱硬化性樹脂中,由與金屬箔間之密黏性的觀 點而言,亦可含有苯氧基樹脂、聚乙烯醇系樹脂、聚醯亞胺、 聚醯胺、聚醯胺醯亞胺、聚醚砜樹脂、聚伸笨基醚樹脂。 作為苯氧基樹脂,可舉例如具有雙酚骨架的苯氧基樹脂、 具有萘骨㈣苯氧基樹脂、具有聯苯f㈣笨氧基樹脂等。 又’亦可使用具有複數種之此料架之構造的苯氧基樹脂。 此等之中,較佳係於苯氧基樹脂中使用具有聯苯骨架及雙 酚1月日架的苯氧基樹脂。藉此,藉由具有聯苯骨架的剛直 性’可提面苯氧基樹脂的玻璃轉移溫度,&因雙齡s骨架的 存在,可提升苯氧基樹脂與金屬間之密黏性。其結果,可達 101102461 28 201251532 到絕緣層102之耐熱性的提升’並於製造多層基板時,可提 升佈線部(導電電路118)對絕緣層1〇2的密黏性。又,較佳 係於苯氧基樹脂中使用具有雙酚A骨架及雙酚F骨架的苯 氧基樹脂。藉此,於製造多層基板時,可進一步提升佈線部 對絕緣層102的密黏性。 作為苯氧基樹脂之市售物,可舉例如東都化成(股)製 FX280 及 FX293 ’ Japan Epoxy Resin(股)製 YX8l〇〇、 YX6954、YL6974、YL7482、YL7553、YL6794、YL7213 及YL7290等。苯氧基樹脂之分子量並無特別限定,較佳係 重量平均分子量為5,000〜70,000者,更佳為10,000〜60,000 者。 在使用本乳基樹脂時》其含量並無特別限定,較佳係樹脂 組成物整體的1〜40重量%,更佳為5〜30重量%。 作為聚乙稀醇系樹脂的市售物,可舉例如電氣化學工業 (股)製電化丁醛 4000-2、5000-A、6000-C 及 6000-EP,積水 化學工業(股)製S-LEC BH系列、BX系列、KS系列、BL 系列及BM系列等。特佳為玻璃轉移溫度為80°Ca上者。 作為聚醯亞胺、聚醯胺、聚醯胺醯亞胺之市售物,可舉例 如東洋紡績(股)公司製「VYLOMAX HR11NN(註冊商標)」 及「HR-MNNjJHRlSETj、日立化成工業(股)製聚醯胺醯 亞胺「KS-9300」等。可舉例如三菱瓦斯化學(股)公司製 「Neopulim C-1210」、新日本理化(股)公司製之可溶性聚醯 101102461 29 201251532 亞胺「RICACOAT SN20(註冊商標)」及「RICAC〇ATpN2〇(註 冊商標)」、日本GE塑膠(股)公司製之聚醚醢亞胺 「ULTEM(註冊商標)」、DIC(股)製「V8000」及「V8002」 及「V8005」、日本化藥(股)製「BPAM155」等。 作為聚醚硬樹脂之市售物,可使用公知物,可舉例如住友The thermosetting resin is an epoxy tree. Further, the tree residue may further contain a curing accelerator. For example, if 9 or chaotic acid ester resin, phenol resin 101102461 26 201251532 曰 or phthalate resin can be used for the hardening promotion limitation, and phenolic phenol resin is not particularly exemplified by, for example, benzoic acid: varnish resin phenol AW (four) varnish Resin, double, main (four) 〇, ~, Na, aryl base (four) material _ fat and other secret two (four) resin, unmodified soluble benzene resin, by tung oil, sub-thorn 7, walnut oil, etc. After the change (four) oil modified soluble benzene _ lipid and other secret type benzene _ fat and so on. As the above-mentioned benzene resin, it is preferred that the benzene viscous varnish or the toluene varnish rhyme H is preferably a bismuth varnish varnish resin from the viewpoint of (four) solder _ sex. In the case of j or the like, one type may be used alone or two or more types of different weight average molecular weights may be used in combination, or two or more types of prepolymers may be used in combination with the above-mentioned hardening accelerator. For example, such as zinc naphthalate, potassium oxalate, tin octoate, octane, bis-ethylidene-acrylic acid (III), triethyl aryl-based cobalt (III) and other organic metal salts, triethylamine, tributyl Amine, diterpene bicyclo[2,2,2], etc., 3, amines, 2_mercaptopurine, 2•phenyl mouth rice. Sit, 2_phenylidene methylimidazole, 2_ethylideneethylimidazole, 1-benzyl-2-methylimidazole, 1-pyryl-2-phenylene, 2-10-decyl (tetra), 1 • Cyanoethyl 2·ethyl·4_ methyl “m. Sit, 1-cyanoethyl 2_ eleven base, 2_ stupid base _5_ carbazol, 2-phenyl-4,5_dipyridyl (tetra), 2,3_two Gas] Η_scale (i, 2_a) benzopyrene and other __, face, double ^, sulfhydryl _ pure compound, acetic acid, benzoic acid, salicylic acid, phthalic acid, etc. , a rust salt compound or the like or a mixture thereof. In addition, one of 101102461 27 201251532 may be used alone, and two or more of them may be used in combination with derivatives thereof. Further, the thermosetting resin may contain a maleimide compound from the viewpoint of heat resistance. The maleimide compound is not particularly limited as long as it has one or more maleimide groups in one molecule. Specific examples thereof include N-phenyl maleimide, N-phenylphenyl maleimide, and bis('s-butylene diimide phenyl) oxime. 2,2-bis{4-(4-maleoximineimine)oxyphenylpropane, bis(3,5-monodecyl-4-methylene-2-imideimidephenyl) , bis(3_ethyl_5_methyl_4_methyleneimine phenyl) decane, bis(3,5-diethyl-4-m-butyleneimine phenyl) A prepolymer of blister, butadiene diamine, or a prepolymer of a maleimide compound and an amine compound, or the like. Further, the thermosetting resin may contain a phenoxy resin, a polyvinyl alcohol resin, a polyimine, a polyamine, a polyamide, or the like, from the viewpoint of adhesion to the metal foil. Imine, polyether sulfone resin, poly-strand ether resin. Examples of the phenoxy resin include a phenoxy resin having a bisphenol skeleton, a naphthyl (tetra)phenoxy resin, and a biphenyl f (tetra) strepoxy resin. Further, a phenoxy resin having a configuration of a plurality of such racks can also be used. Among these, a phenoxy resin having a biphenyl skeleton and a bisphenol January shelf is preferably used in the phenoxy resin. Thereby, the glass transition temperature of the rigidity-preparable phenoxy resin having a biphenyl skeleton can increase the adhesion between the phenoxy resin and the metal due to the presence of the double age s skeleton. As a result, it is possible to improve the heat resistance of the insulating layer 102 to 101102461 28 201251532 and to improve the adhesion of the wiring portion (conductive circuit 118) to the insulating layer 1〇2 when manufacturing the multilayer substrate. Further, it is preferred to use a phenoxy resin having a bisphenol A skeleton and a bisphenol F skeleton in the phenoxy resin. Thereby, when the multilayer substrate is manufactured, the adhesion of the wiring portion to the insulating layer 102 can be further improved. As a commercially available product of a phenoxy resin, for example, FX280 manufactured by Tohto Kasei Co., Ltd., and YX8l, YX6954, YL6974, YL7482, YL7553, YL6794, YL7213, and YL7290 manufactured by Japan Epoxy Resin Co., Ltd., etc., may be mentioned. The molecular weight of the phenoxy resin is not particularly limited, and it is preferably those having a weight average molecular weight of 5,000 to 70,000, more preferably 10,000 to 60,000. The content of the present invention is not particularly limited, and is preferably from 1 to 40% by weight, more preferably from 5 to 30% by weight, based on the total of the resin composition. As a commercially available product of a polyvinyl alcohol-based resin, for example, an electric chemical industry (unit) can be used to charge butyraldehyde 4000-2, 5000-A, 6000-C, and 6000-EP, and Sekisui Chemical Industry Co., Ltd. LEC BH series, BX series, KS series, BL series and BM series. Particularly preferred is a glass transfer temperature of 80 ° Ca. For example, "VYLOMAX HR11NN (registered trademark)" and "HR-MNNjJHRlSETj", manufactured by Toyobo Co., Ltd., and Hitachi Chemical Industry Co., Ltd., are commercially available as Polyimine, Polyamide, and Polyamidamine. ) Polyacrylamide imine "KS-9300" and the like. For example, "Neopulim C-1210" manufactured by Mitsubishi Gas Chemical Co., Ltd., and Soluble Polysaccharide 101102461 29 201251532 by the Nippon Chemical and Chemical Co., Ltd., the imine "RICACOAT SN20 (registered trademark)" and "RICAC〇ATpN2〇" "Registered Trademarks"", Polyurethane Imine, "ULTEM (Registered Trademark)", manufactured by GE Plastics Co., Ltd., "V8000", "V8002" and "V8005", and Japanese Chemicals (shares) "BPAM155" and so on. As a commercial product of a polyether hard resin, a well-known thing can be used, for example, Sumitomo

化學公司製之 PES4100P、PES4800P、PES5003P 及 PES5200P 等。 作為聚伸苯基醚樹脂,可舉例如聚(2,6-二曱基·ΐ,4-伸笨基) 氧化物、聚(2,6-二乙基-1,4-伸笨基)氧化物、聚(2-曱基_6_乙 基-1,4-伸苯基)氧化物、聚(2_曱基·6_丙基_丨,4_伸笨基)氧化 物、聚(2,6-二丙基-1,4-伸苯基)氧化物、聚(2-乙基丙基 _1,4_伸苯基)氧化物等。作為市售物,例如有日本G.E.塑膠 公司製「Noryl PX9701(註冊商標)」(數量平均分子量 Mn=14,000)、「Noryl 640-111(註冊商標)」(數量平均分子量 Mn=25,000) ’及旭化成公司製「从2〇2」(數量平均分子量 Mn=20,000)等’可藉公知方法使此等低分子量化而使用。 此等之中’較佳係藉官能基使末端經改質的反應性寡聚伸 苯基氧化物。藉此,由於可提升與熱硬化性樹脂間之相溶 性,形成聚合物間之3維交聯構造,故機械強度優越。可舉 例如日本專利特開2006-28111號公報記載的2,2,,3,3,,5,5、 六曱基聯苯基·4,4’-二醇-2,6-二甲基苯紛聚縮合物與氣甲基 苯乙浠的反應生成物。 101102461 30 201251532 此種反應性寡聚伸苯基氧化物,可藉由公知方法進行製 造。又,亦可使用市售物。例如可適合使用〇PE_2st 22〇〇(三 菱瓦斯化學公司製)。 反應性寡聚伸苯基氧化物的重量平均分子量,較佳為 2’000〜2G’_ m’GGG〜15,_。若反應性寡聚伸苯基氧 化物的重量平均分子量㈣2G,_’咖赠解於揮發性溶 劑中。另-方面,若重量平均分子量未滿2,_,則因交聯 密度過高,㈣硬化物之彈性係數或可撓性造料良影響。 本實施形態中所使用之樹脂組成物中的熱硬化性樹脂9的 量,係配合其目的而適當調整即可’並無特別限^,樹脂組 成物之總©形份中’熱硬化性樹脂較佳為iG〜9Q重量%,更 佳20〜70重量%,再更佳25〜50重量〇/〇。 另外,於使用環氧樹脂及/或氰駿酉旨樹脂作為熱硬化性樹 脂時,係於上述_喊物之總_份中,環氧樹脂較 重量。/。,環氧樹脂更佳為5〜25重量%。又,樹脂植成 物之總固形份中,氰酸酯樹脂較佳為5 好 樹脂更佳為10〜25重量%。 s。’氮酸酯 上述樹脂組成物中,由低熱膨脹與機 :崎有無機填充材。無機填充材並無特別二 如滑石、燒成黏土、未燒成黏土、φ 了舉例 氧化敛、氧化銘、二氧化破璃等之频鹽, 酸妈、侧、水滑石等之碳酸-鹽氣:”二一 乳虱化鋁、水鋁土 101102461 201251532 (AIO(OH) ’通常稱為「類」水紹土之水紹土(亦即,Chemical company PES4100P, PES4800P, PES5003P and PES5200P. Examples of the polyphenylene ether resin include poly(2,6-dimercapto·anthracene, 4-extended base) oxide and poly(2,6-diethyl-1,4-extended base). Oxide, poly(2-indenyl-6-ethyl-1,4-phenylene) oxide, poly(2-fluorenyl-6-propyl-anthracene), oxide (2,6-Dipropyl-1,4-phenylene) oxide, poly(2-ethylpropyl-1,4-phenylene) oxide, and the like. As a commercial item, for example, "Noryl PX9701 (registered trademark)" (quantitative average molecular weight Mn = 14,000) and "Noryl 640-111 (registered trademark)" (quantitative average molecular weight Mn = 25,000) manufactured by GE Plastics Co., Ltd., and Asahi Kasei The company's "2" 2 (quantitative average molecular weight Mn = 20,000) can be used by a known method to reduce the molecular weight. Among these, it is preferred to use a functional group to modify the terminal end-modified reactive oligomeric phenyl oxide. Thereby, since the compatibility with the thermosetting resin can be improved and the three-dimensional crosslinked structure between the polymers is formed, the mechanical strength is excellent. For example, 2, 2, 3, 3, 5, 5, hexamethylenebiphenyl 4,4'-diol-2,6-dimethyl group described in JP-A-2006-28111 A reaction product of a benzene polycondensate and a gas methyl acetophenone. 101102461 30 201251532 Such a reactive oligomeric phenyl oxide can be produced by a known method. Further, a commercially available product can also be used. For example, 〇PE_2st 22〇〇 (manufactured by Mitsubishi Gas Chemical Co., Ltd.) can be suitably used. The weight average molecular weight of the reactive oligomeric phenylene oxide is preferably 2'000 to 2G'_m'GGG~15,_. If the weight average molecular weight of the reactive oligomeric phenylene oxide (4) is 2G, _' coffee is added to the volatile solvent. On the other hand, if the weight average molecular weight is less than 2, _, the crosslink density is too high, and (4) the elastic modulus of the cured product or the flexible material is good. The amount of the thermosetting resin 9 in the resin composition used in the present embodiment can be appropriately adjusted in accordance with the purpose thereof, and is not particularly limited. The total amount of the resin composition is 'thermosetting resin'. It is preferably iG to 9Q% by weight, more preferably 20 to 70% by weight, still more preferably 25 to 50% by weight. Further, when an epoxy resin and/or a cyanide resin is used as the thermosetting resin, the epoxy resin is more than the weight of the total amount of the above-mentioned ingredients. /. The epoxy resin is more preferably 5 to 25% by weight. Further, in the total solid content of the resin plant, the cyanate resin is preferably 5 or more preferably more preferably 10 to 25% by weight. s. 'Nitroleumate The above resin composition is composed of a low thermal expansion and an inorganic filler. There are no special inorganic fillers such as talc, burnt clay, unfired clay, φ, oxidized, oxidized, oxidized, etc., salt, sour, side, hydrotalcite, etc. :" 二一乳虱化化铝,水铝土101102461 201251532 (AIO(OH) ' is often referred to as "class" water and soil water (also known as

Al2〇3 xH2〇 ’於此’ χ=ι至2)、氫氧化鎮、氫氧化約等之 氫氧化物,硫酸鋇、硫酸鈣、亞硫酸鈣等之硫酸鹽或亞硫酸 鹽,硼酸鋅、曱基硼酸鋇、硼酸鋁、硼酸鈣、硼酸鈉等之硼 酸鹽,氮化鋁、氮化硼、氮化矽、氮化碳等之氮化物’鈦酸 锶、鈦酸鋇等之鈦酸鹽等。可單獨使用此等中之一種,亦可 併用2種以上。 此等之中,較佳為氫氧化鎂、氫氧化鋁、水鋁土、二氧化 石夕,熔融二氧切、滑石、燒成滑石、氧⑽。由低熱膨服 性及絕緣可靠性的觀點而言’特佳為三氧化#,更佳為球狀 之熔融二氧切。又,於_性方面,較佳為氫氧化铭。又, 本實施形態中,由於使用即使是無機填充材仍料浸含的基 材’、故可於上述樹脂組成物中增加無機填充材的量。在樹脂 、、’成物中之無機填充材為向濃度時,鑽頭磨耗性雖惡化,但 在無機填充材為水土時,由鑽順磨耗性良好的觀點而 較佳。 無機填充材之㈣並無特別限定,可使时均粒徑為單分 散的無機填充材,亦可使用平均粒徑為多分散的無機填充 材再者’可併用平均粒徑為翠分散及/或多分散之無機填 充材的1種或2種以上以述無機填充材之平均粒徑並無特 別限疋,較佳為〇 1μηι〜5 0μπι,特佳Q响〜3_。若無機 填充材之粒彳絲滿上述下限值,職旨組成物之黏度變 101102461 32 201251532 向,故有對預浸體製作時之作業性造成影響的情形。又,若 超過上述上限值,則有樹脂組成物中發生無機填充材之沉降 等現象的情形。又,平均粒徑可使用雷射繞射/散射式粒度 分佈測定裝置(島津製作所製,SALD-7000等之一般機器) 進行測定。 無機填充材之含量並無特別限定’較佳係於上述樹脂組成 物之總固形份中為1 〇重量%〜90重量%,更佳3〇重量%〜8〇 重1%,再更佳50重量%〜75重量%。在上述樹脂組成物中 含有氰酸酯樹脂及/或其預聚物時,上述無機填充材之含量 較佳係於樹脂組成物之總固形份中為5〇〜75重量%。若無機 填充材含量超過上述上限值,則因樹脂組成物之流動性極 差,故不佳;若未滿上述下限值,則由樹脂組成物所構成的 絕緣層的強度不足,而不佳。 另外,本實施形態中所使用之樹脂組成物,亦可調配橡膠 成分,例如,作為本實施形態中可使用之橡膠粒子的較佳 例,可舉例如核殼型橡膠粒子、交聯丙烯腈丁二烯橡膠粒 子、交聯苯乙烯丁二烯橡膠粒子、丙烯酸橡膠粒子、聚矽氧 粒子等。 核殼型橡膠粒子係具有核層與殼層的橡膠粒子,可舉例 如·外層之喊層為由玻璃狀聚合物所構成,内層之核層為由 橡膠狀聚合物所構成的2層構造;或外層之殼層為由玻璃狀 聚合物所構成,中間層為由橡膠狀聚合物所構成,核層為由 101102461 33 201251532 玻璃狀聚合物所構成的3層構造者等。玻璃狀聚合物層係例 甲基丙稀酉夂甲酉旨之聚合物等所構成,橡膠狀聚合物層係 例如由丙烯酸τ_聚合物(τ基橡膠)等所構成。作為核殼型 橡膠粒子之具體例,可舉例如ac3832、Al2〇3 xH2〇'in this ' χ=ι to 2), hydroxides such as hydroxide, hydroxide, etc., sulfates or sulfites such as barium sulfate, calcium sulfate, calcium sulfite, zinc borate, Borates of bismuth bismuth borate, aluminum borate, calcium borate, sodium borate, etc., nitrides of nitrides such as aluminum nitride, boron nitride, tantalum nitride, and carbon nitride, such as barium titanate and barium titanate Wait. One of these may be used alone or in combination of two or more. Among these, magnesium hydroxide, aluminum hydroxide, bauxite, silica, sulphur dioxide, talc, calcined talc, and oxygen (10) are preferred. From the viewpoint of low heat expansion property and insulation reliability, it is particularly preferable to be trioxide #, more preferably spherical molten dioxane. Further, in terms of _ sex, it is preferably hydrazine. Further, in the present embodiment, since the base material which is impregnated even by the inorganic filler is used, the amount of the inorganic filler can be increased in the resin composition. When the inorganic filler in the resin or the product is in a concentration, the bit abrasion property is deteriorated. However, when the inorganic filler is water and soil, it is preferable from the viewpoint of satisfactory drill wear resistance. (4) The inorganic filler is not particularly limited, and the inorganic filler having a uniform average particle diameter may be used, or an inorganic filler having an average particle diameter of polydisperse may be used. The average particle diameter of the inorganic filler, which is one or two or more kinds of the inorganic filler, is not particularly limited, and is preferably 〇1μηι to 5 0μπι, and particularly preferably Q ~3_. When the particle size of the inorganic filler is above the lower limit, the viscosity of the composition of the composition is changed to 101102461 32 201251532, so that the workability at the time of preparation of the prepreg is affected. In addition, when it exceeds the above upper limit, a phenomenon such as sedimentation of the inorganic filler may occur in the resin composition. Further, the average particle diameter can be measured by a laser diffraction/scattering type particle size distribution measuring apparatus (manufactured by Shimadzu Corporation, general equipment such as SALD-7000). The content of the inorganic filler is not particularly limited. It is preferably from 1% by weight to 90% by weight, more preferably from 3% by weight to 8% by weight, and more preferably from 50% by weight of the total solid content of the above resin composition. Weight% to 75% by weight. When the cyanate resin and/or its prepolymer are contained in the above resin composition, the content of the inorganic filler is preferably from 5 to 75% by weight based on the total solid content of the resin composition. When the content of the inorganic filler exceeds the above upper limit, the fluidity of the resin composition is extremely poor, which is not preferable. If the lower limit is not exceeded, the strength of the insulating layer composed of the resin composition is insufficient. good. Further, the resin composition used in the present embodiment may be blended with a rubber component. For example, as a rubber particle which can be used in the present embodiment, for example, core-shell type rubber particles and crosslinked acrylonitrile are used. Diene rubber particles, crosslinked styrene butadiene rubber particles, acrylic rubber particles, polyfluorene oxide particles, and the like. The core-shell type rubber particles are rubber particles having a core layer and a shell layer, and for example, the outer layer is composed of a glassy polymer, and the inner layer is a two-layer structure composed of a rubber-like polymer; The shell layer of the outer layer is composed of a glassy polymer, the intermediate layer is composed of a rubbery polymer, and the core layer is a three-layer structure composed of 101102461 33 201251532 glassy polymer. The glassy polymer layer is composed of a polymer such as methyl acrylate, and the rubbery polymer layer is made of, for example, an acrylic acid τ polymer (τ-based rubber). Specific examples of the core-shell type rubber particles include, for example, ac 3832.

AC3816N(商品名 Ganz 化成(股)製),METABLEN KW_4426(商品名三菱螺榮(股)製)。作為交聯丙稀腈丁二稀 橡膠(NBR)粒子的具體μ ’可舉例& 叫(平均粒徑 0.5μιη ’ JSR(股)製)等。 乍為交聯本乙埽丁—稀橡膠(SBR)粒子的具體例,可舉例 如XSK-500(平均粒徑〇 5μιη,皿(股)製)等。作為丙稀酸橡 膠粒子之具體例,可舉例如METABLEN W300A(平均粒徑 Ο.ίμιη)、W450A(平均粒徑〇.2_(三菱嫘股)製)等。 聚矽氧粒子若為由有機聚矽氧烷所形成之橡膠彈性微粒 子,則無特別限定,可舉例如由聚矽氧橡膠(有機聚矽氧烷 交聯彈性體)本身所構成的微粒子,以及將由二維交聯主體 之聚矽氧所構成之核部藉三維交聯型主體之聚矽氧所被覆 的核殼構造粒子等。作為聚矽氧橡膠微粒子,可使用 KMP-605、KMP-600、KMP-597、KMP-594(信越化學(股) 製)、TORAYFILE-500、TORAYnLE-600(東麗·道康寧(股) 製)等之市售物。AC3816N (trade name Ganz Chemical Co., Ltd.), METABLEN KW_4426 (trade name Mitsubishi Luorong (share) system). Specific examples of the crosslinked acrylonitrile butadiene rubber (NBR) particles can be exemplified by (average particle diameter: 0.5 μm η JSR). Specific examples of the cross-linking of the bismuth-thin rubber (SBR) particles include, for example, XSK-500 (average particle diameter 〇 5 μmη, manufactured by a dish). Specific examples of the acrylic rubber particles include METABLEN W300A (average particle diameter Ο.ίμιη) and W450A (average particle diameter 〇.2_ (manufactured by Mitsubishi)). The polysiloxane particles are not particularly limited as long as they are rubber elastic fine particles formed of an organic polysiloxane, and may be, for example, fine particles composed of a polyoxyxene rubber (organic polyoxyalkylene crosslinked elastomer), and A core-shell structured particle coated with a polyfluorinated oxygen of a three-dimensional crosslinked type body by a core portion composed of a two-dimensionally crosslinked host. As the polyoxyxene rubber microparticles, KMP-605, KMP-600, KMP-597, KMP-594 (manufactured by Shin-Etsu Chemical Co., Ltd.), TORAYFILE-500, and TORAYnLE-600 (manufactured by Toray Dow Corning Co., Ltd.) can be used. And other commercial products.

上述樹脂組成物中’亦可進一步含有偶合劑。偶合劑係藉 由使熱硬化性樹脂無機填充材間之界面的濕潤性提升,而I 101102461 34 201251532 樹脂及無機填充材對基材均勻地定著,用於改良财熱性、尤 其是吸濕後之焊錫耐熱性而予以調配。 上述偶合劑並無特別限定,可舉例如環氧基石夕烧偶合劑、 陽離子性魏偶合劑、胺基魏偶合劑、鈦酸1 ㈣合劑、 聚石夕氧油型偶合麟。藉此’可提高與無機填充材之界面間 的濕潤性,藉此可更加提升耐熱性。 上述偶口狀添加里並無特別限定,相對於無機填充材 100重量份,較佳為G.G5〜3重量份、特佳(U〜2重量份。若 3量未滿上述下限值’則因無法充分被覆無機填充材,故有 提升耐熱性之效果降低的㈣,若超過上述上限值,則對反 應造成影響,而有彎曲強度等降低的情形。 本實施开八、所使用之樹脂組成物中,視需要亦可添加消泡 ^均平』!外線吸收劑、發泡劑、抗氧化劑、難燃劑、 聚石夕氧粉末等之_助劑、離子捕捉㈣之上述成分以外的 添加物〇 上述樹月旨組成物中’由容易實現預浸體之低線膨脹化、高 剛性化及高财熱化的觀點而言,較佳係至少含有環氧樹脂、 氛酸醋樹脂及無機填充材。其中,於樹脂組成物之固形份 中,較佳係含有ί哀氧樹脂5〜5〇重量%、氰酸酯樹脂5〜5〇重 量%、及無機填充材10〜90重量%,更佳係含有環氧樹脂5〜25 重量%、氰酸酯樹脂10〜25重量%及無機填充材3〇〜8〇重量 %。 101102461 35 201251532 本實施形態中所使用之預浸體,係對基材浸含或塗佈樹脂 組成物之清漆而成者,作為基材,可使用各種電氣絕緣材料 用積層板所使用的周知物。作基材之材f的例子,可舉例如 E玻璃、D玻璃、T麵、s玻璃或Q玻料之無機物纖維, 聚醯亞胺、聚g日或四氟乙婦等之有機纖維,以及其等之混合 物等。此等基材係具有例如織布、不織布、粗紗(roving)、 切股敗、表面姓等之形狀,材f及形狀可視目標成形物的用 途或性能而選擇,視需要可使用單獨或2種以上之材質及形 狀基材厚度並無特別限制,通常使用0.01〜0.5mm左右者, 由m或耐湯性、加卫性方面而言,較佳係藉魏偶合劑 等:表面處理者或經機械性開纖處理、以及施行了扇平化 田。預/又體通常係依其樹脂含有率於乾燥後成為 20 〜90 ^莖%之方式將樹脂浸含或塗佈於基材上,依聰之 β二乾^ 1〜2〇分鐘’作成半硬化狀態(B階段狀態)而 ° 乂得再者,可藉由將該預浸體重疊通常1〜2G片,再於 '上配置具有載體箔之極薄銅箔,依此構成進行加熱加 璧予乂積層’藉此得到積層板。複數片之預浸體層的厚度 雖視用途而異’通常可為G.G3〜2mm厚。作為積層方法,可 應用通韦之積層板的手法,例如使用多段壓製、多段真空壓 製、連續成形、高壓爸成形機等,依通常溫度1〇〇〜·。c、 壓力0.2〜lOMPa、加熱時間〇 w小時之條件進行積層或 使用真工層合裝置等依層合條件50〜150°C、0.1〜5MPa、真 101102461 36 201251532 空壓1·0〜760mmHg之條件進行層合。。 本實施形態中所使用之_層^,係如上述般,其上面 2〇(與絕緣側H)2側相反的面)中,藉XRD薄膜法進行測定 時之面方位(200)之波峰強度的比率,係相對於面方位 (1) (2GG) (22G)及(311)之波峰強度的和為26%以下、 較佳25%以下、更佳24%。藉由使面方位(細)之比率為上 述範圍内’可提升銅落層1〇4之側姓刻特性。 另外銅y白層104之上面20中之面方位(2〇〇)及(22〇)之波 峰強度之和的比率,係相對於面方位(出)、(200)、(220)及 (311)之波峰強度的和,較佳為32%以下、更佳以下、 再更佳30%以下。藉由將面方位(2〇〇)及⑽)之波峰強度的 和的比率設為上述範圍内,則可進一步提升銅歸ι〇4的側 钱刻特性。因此,可得到可#性優越的印刷佈線板,故可提 升此製造方法的產率。 作為習知鋼箱的形成方法,通常係於電極上藉鑛覆處理形 成^un左右膜厚的銅箱。然而,此形成方法中,有㈣延 續者下層金屬層(例如電極)配向性的情形,而難以作成具有 所需結晶面的_。又,若銅箱之膜厚較厚,例如為30μιη 以上時,有結晶粒朝厚度方向粗化大的傾向,對應於此,可 ,其上面之面方位(22〇)的比率變高。因此,習知係藉由提 高姓刻特1生較面方位(111)優越之面方位(220)等的比率,而 欲提升銅箱之縱餘刻性,以提升下層銅箱相對於上層之金屬 101102461 37 201251532 層的蝕刻逮率。 相對於此,右太鲁& 於電極上形/ 形態、之銅箱層104的形成方法中,係 ,,. 訇離層,於該剝離層上形成銅箔層104。因 之與鋼箱層104延續下層電極之配向性的情形。換言 ,二適當控制與剝離層相接之銅⑽104之一面的配向 性延續Hi層1G4之結晶面構成層狀’故可使—面之配向 1 一面。藉此,可形成具有所需配向性的銅络層 104。因 j;卜,I a 本貫施形態中,係於銅箔層104之上面,可使 触刻特性優越之面方位_)的比率成為既定值以下,故可 料後述步驟中之鋼羯層1〇4之纖刻特性。藉此,可實現 習知未有的良好佈線形狀,其結果,得到產率優越的印刷佈 線板。又’詳細之銅箱層1〇4的形成方法將於後述。 另外’銅箱層1〇4之膜厚並無特別限定,較佳為〇 ΐμιη以 上且5帅以下,更佳〇 5师以上且_以下特佳化一 以上且2μηι以下。藉由將銅箔層1〇4之臈厚設為此範圍内, 可使銅fg層104之結晶粒之粒徑一致。藉此,於銅箱層1〇4 之膜厚方向,可抑制其配向性變動。 藉由以上,可控制銅箔層104上面2〇之配向性,例如可 使由銅fg層104下面22起至上面20 ’結晶面之比率(亦即 配向性)相同;例如可使面方位(2〇〇)之比率、或面方位(2〇〇) 及面方位(220)之比率相同。於此所謂相同,係指容許製造 步驟上的微差,例如銅箔層104下面22之面方位(2〇〇)的比 101102461 38 201251532 率,係其上面20之面方位(200)之比率的±5%以内。因此, 藉XRD薄膜法測定之銅箔層104下面22之面方位的比率, 可謂是銅箔層104上面20的比率。 另外,藉加熱加壓成形形成銅箔積層板1 〇〇後之銅箔層 104之上面20中,上述面方位(200)之比率、或面方位(2〇〇) 及面方位(220)之比率,係維持加熱加壓成形前之銅箔層(可 剝離式之具載體箔的銅箔)的值。換言之,加熱加壓成形之 銅箔層104上面20中,面方位(200)之比率為26%以下、較 佳24%以下、更佳23%以下;另一方面,面方位(細)及面 方位(220)之比率較佳為32%以下、更佳31%以下、再更佳 30%以下。作為於此之加熱加壓成形條件,設為例如2〇〇它 下1小時、壓力3MPa。如此維持比率的理由尚不明確,但 推測係因銅、冶層104中之結晶粒之平均粒徑較小、其平均粒 徑具有一定程度的一致性等。 因此,即使在後述銅箔層1〇4之蝕刻步驟的前後,銅箔層 104上面(亦即與金屬層ιΐ6(例如無電解鍍覆層11〇)之接觸 面)之面方位(200)的比率,或面方位(2〇〇)及面方位(22〇)之比 率可謂相同。 本實施形態之銅箔層104較佳係具有長邊之平均長度為 2μπι以下的結晶粒。作為銅箔層中之結晶粒的形狀,例 如為柱狀、二角錐形狀。因此,於剖面視時,以銅箔層1 〇4 之結晶粒之最大長度作為長邊。該長邊之平均長度係使用 101102461 39 201251532 FIB-SIM(Focused Ion Beam Scanning Ion Microscope)或 FIB-SEM(Focused Ion Beam Scanning Electron Microscope) 依約1萬〜1萬2千倍之間,由縱ΙΟμηι、橫ΙΟμιη的剖面影 像算出平均,算出合計3個之視野影像的平均值。藉此,提 升銅馆層104之姓刻特性。 另外,本實施形態之銅箔層1〇4中,於剖面視時,長邊之 平均長度為2μιη以下之結晶粒所佔有的面積率,較佳為8〇% 以上、更佳85%以上、再更佳90°/。以上。該面積率係對上 述同樣之剖面影像的視野進行影像處理,算出合計3個視野 的平均值。藉此,提升銅箔層1〇4之蝕刻特性。 另外,本實施形態中所使用之具載體箔之極薄銅箔(銅箔 層104),係對其極薄銅箔之粗化面進行凸粒狀之電著物層 (被稱為燒鍍。例如參照日本專利特開平9_195〇96號)之形成 或氧化處理、還原處理、蝕刻等進行之粗化面處理。因此, 本貫施形態所使用之極薄銅箔之粗化面的表面粗度,係JIS B0601所示之10點平均粗度(Rz)的上限值較佳為5鄭爪以 下、更佳2.0μιη以下;另一方面,下限值並無特別限定,較 佳為Ο.ίμιη以上。再者,算術平均粗度(Ra)較佳為丨卟爪以 下、更佳0.5μιη以下。 尚且’藉由進行凸粒狀之電著物層之形成、或粗化面處 理’則鋼4層104具有塊材部分、以及於塊材部分之一面所 形成的具凸粒部分(以下亦稱為粗化足部分)。 101102461 201251532 另外,本實施形態中,作為銅箔層104,係除了鋼所構成 之銅箔(製造步驟上不可避免地混入之混入物除外)以外,亦 可為含有鎳或鋁等之添加金屬成分的銅箔(此時,銅之含量 並無特別限定,相對於構成銅箔層104之總金屬成分之重量 合計值,較佳為90重量%以上、更佳%重量%以上、再更 佳99重量%以上。又,作為添加金屬成分,可為單獨,亦 可併用複數種卜又,亦可取代銅箔層1〇4,使用鎳箔、鋁 箔等之金屬箔。 在230C、1小時之條件的加熱處理前後,銅箔層1〇4之 維氏硬度之差較佳為〇Hv以上且5ΌΗν以下,更佳0Hv以 上且30Hv以下。藉由將銅箔層1〇4之維氏硬度之差設為上 限值以下,則可抑制因加熱而銅箔層1〇4之再結晶進展且結 晶粒度變大、而蝕刻速度變慢的情況,或可抑制蝕刻後之細 電路應變蓄積。 另外,銅鑌層104在230。(:、1小時加熱處理後的維氏硬 度’較佳為180Hv以上且240Hv以下,更佳185Hv以上且 235Hv以下。藉由將加熱後之維氏硬度設為18〇Hv以上, 則可抑制因加熱而薄銅層(銅箔層1〇4)之再結晶進展而結晶 粒度變大的情形,可或抑制蝕刻後之電路直線性降低的情 形。另一方面’藉由將加熱後之維氏硬度設為24〇Hv以下, 則可抑制薄銅層變得過硬而變脆的情形。藉此,可抑制於操 作時發生破裂,以及提升所形成之細微佈線的冷熱衝擊耐 101102461 41 201251532 性。 本實施形態中,維氏硬度可依以下方法測定。 亦即,維氏硬度之測定係根據JIS Z 2244,依以下順序, 使用Akashi公司製微小硬度計(型號MVK-2H)依23°C進 行。(1)將形成至薄銅層之具支撐體之極薄銅箔於加熱至 230°C的烘箱(氮氣環境)中放置1小時後,裁切為10x10mm 正方。(2)對切割試料依負荷速度3μιη/秒、試驗負重5gf、 保持時間15秒之條件施加壓痕,由壓痕之測定結果算出維 氏硬度。(3)將已測定任意5點維氏硬度的平均值,作為本 實施形態之維氏硬度值。 銅箔層104(薄層銅箔)之蝕刻速率為〇.68μιη/ηΰη以上且 1.25μιη/ιτύη 以下’更佳 〇·68μηι/ιηίη 以上且 1.24μιη/ηήη 以 下,再更佳0.69μιη/ιηίη以上且1.23pm/min以下。本實施形 態之銅羯層104的蝕刻速率僅只於表示塊材部分的蝕刻速 率〇 尚且’上述銅箔層1〇4之蝕刻速率,係特定為下述蝕刻條 件下者·在由6〇g之95%硫酸、i〇〇〇cc純水及20cc之34.5% 過氧化氫水所構成,且溫度3(TC±rc的硫酸/過氧化氫水 中,浸潰積層板。 本貫施形態中’藉由將銅箔層104之蝕刻速率設為下限值 以上則可減低銅箔層1〇4之蝕刻殘渣,並使佈線形狀良 好又藉由將銅箔之蝕刻速率設為上限值以下’則可抑制 101102461 42 201251532 在銅/自層104㈣形成切σ、佈線與絕緣層間之密黏 的隋也又,在進行钮刻至銅箱層104之粗化足部分時低 抑制在銅、,自層104之塊材部分發生異常之縮頸的情形。。 本實施㈣中,㈣之㈣迷率可藉由以下方法測定。 1·將去除了載體箱(載體㈣1〇6)、於兩面上積層有極薄銅 笛的基板(㈣積層板_,裁斷為4Qmmx8Gmm而得到樣 本片對樣本片藉遊標卡尺測定並讀取至小數點以下2位, 异出樣本片之片面積。 2. 於水平乾燥線,對樣本片進行机、1分鐘u次的乾燥 處理。 3. 測定樣本片之初期重量WG(其中包括基板重量)。 4. 調製蝕刻液。 4-1 .秤量95%硫酸(和光純藥公司製,特級)6〇g,置入比 之燒杯中。 4-1 :將純水投入燒杯中,作成共計1〇〇〇cc。 4-3 :藉磁性攪拌子依3〇±lt攪拌3分鐘。 4-4 .秤量34.5%過氧化氫水(關東化學公司製,鹿一 級)20cc ’置入燒杯中。 5·浸潰於上述蝕刻液(液溫3〇±n,攪拌條件:磁性攪拌子, 250rpm) 〇 6.在極薄箔之塊材層被完全蝕刻為止,每30秒測定處理後 之重量W1(其中包括基板重量)。 101102461 43 201251532 7.算出侧重量(WO — W i)/(經浸潰之兩面面積=m2),依χ 軸為時間(秒)、Y軸為蝕刻質量(g/m2)進行繪圖,於〇〜丨的 秒之間依最小平方法算出斜度κ。 以下表示本貫施形態之银刻速率之換算式。 触刻速率(pm/min)=K(g/sec · m2)+8.92(銅比重 g/cm3)x60(sec/min) 本實施形態中,藉由減小鋼箔層1〇4之結晶粒徑、減少如 熱後之維氏硬度的變化、提高粗化足部分之蝕刻速度,則可 提高銅箔層104(尤其是塊材部分)的蝕刻速率。又,杈化足 部分之蝕刻速度通常較部材部分之蝕刻逮度慢,但例如可^ 由減小電解密度而予以提高。 胃 於此,說明銅羯層104所使用之可剝離式銅绪的詳細形 方法。 夕、 作為本實施形態所使用之銅箔的製造方法,並無特別限 定,例如在製造具有載體之可剝離式銅箔時,係在厚 10〜50μιη之載體箔上形成成為剝離層之金屬等的無機化合 物或有機化合物層,於該剝離層上藉鍍覆處理形成銅箔。作 為鍍覆處理之條件,例如在使用了硫酸鋼浴時,可設為硫酸 50〜100g/L、銅30〜100g/L、溫度2〇ΐ〜8〇。〇、電流密度 0.5〜100A/dm之條件’在使用有焦破酸鋼浴時,可設為斧、 鱗酸鉀 100〜700g/L、銅 10〜50g/L、溫度 30¾ 〜60°C、pH8〜12、 電流密度1〜ΙΟΑ/dm2之條件。又,考慮到鋼箱之物性或爭滑 101102461 44 201251532 性’亦可於上述浴中添加各種添加劑。x,所謂可制離式之 金屬Μ ’係具有戴體的金屬羯,且載體為可剝離的金屬^ 本實施形態中,鋼猪於剝離層上之形成,可藉由例如含白有 平均分子量為5_以下之明膠15〜35ppm作為添加劑^吏 用硫酸銅麟進行陰極電解處理而施行^此時,鋼⑽之妒成 係藉由以形成了 _層之載縣作為陰極,使用上述硫酸銅 渡浴進行電解處理,而關離層上進行賴*施行。若為此 種銅fl之形成方法,則於高溫加減亦具㈣度的機械強 度,可形成蝕刻性優越、且操作性亦優越的銅箔。此種效果 係因藉由添加明膠,可使構成銅之結晶細微化所致。 在明膠之平均分子量為涵以下時,可抑制因加熱所造 成的薄銅層再結晶。藉此,實施加熱後之結晶的細微化。關 於其里由尚未充刀闡明,但可認為藉由將明勝之分子量設為 -定值以下,則明膠在鍍覆時容易被攝人至結晶粒界中,結 果可抑制再結晶之進展所致。日轉之平均分子量較佳為° 5〇〇〜5_’ £佳為_〜测。藉由將日轉之平均分子量設 為500以上則可抑制添加於硫酸鋼錢浴之明膠於酸性溶液 中被刀解#^子里之胺基酸等分解為有機化合物的情形。 藉此,可抑舰_於«時被攝人至結晶粒界中而防止再 結晶的效果降低。 硫酸銅鍍浴中之明膠濃度較佳為15〜35卿。在明膠濃度 為15PPm以上時’可充分得到因加熱所造成的再結晶抑制 101102461 45 201251532 效果。因此,可於加熱後維持細微的結晶狀態。在明膠濃度 為35ppm以下時’可抑制藉錄覆所形成之銅络的内部應力 ’k:局。藉此’可抑制具有載體箔之極薄銅箔捲曲、於搬送時 發生不良的情形。 作為硫酸銅鑛浴’適合使用例如含有硫酸銅5水合物、硫 酸、明膠及氣的硫酸酸性硫酸銅鍍浴。硫酸銅鍍浴中之硫酸 銅5水合物的濃度較佳為5〇g/L〜3〇〇g/L、更佳 100g/L〜200g/L。硫酸濃度較佳為4〇〜i6〇g/L、更佳 80g/L〜120g/L。明膠之濃度如上述。氯之濃度較佳為 1〜20ppm、更佳3〜10ppm。鍍浴之溶媒通常為水。鍍浴之溫 度較佳為20〜60°C、更佳30〜50°C。電解處理時之電流密度 較佳為1〜15A/dm2、更佳2〜i〇A/dm2。 形成銅箱時,在使用上述硫酸銅鍍浴之電解處理前,為了 防止針孔的發生’可使用利用了所謂分佈性(throwjng p〇wer) 佳之鑛浴的底鑛(strike plating)。作為底鍍所使用之鍵浴, 可舉例如焦磷酸銅鍍浴、檸檬酸銅鍍浴、檸檬酸銅鎳鍍浴等。 作為焦磷酸銅鍍浴’較佳為例如含有焦磷酸銅及焦磷酸鉀 之鍍洛。焦磷酸銅鍍浴中之焦磷酸銅的濃度較佳為 60g/L〜110g/L、更佳70g/L〜90g/L。焦磷酸鉀之濃度較佳為 240g/L〜470g/L、更佳300g/L〜4〇〇g/L。鍍浴之溶媒通常為 水。鍍浴之pH較佳為8.0〜9.0、更佳8.2〜8.8。為了調整pH 值,亦可添加氨水等(以下亦同)。鍍浴之溫度較佳為 101102461 46 201251532 20〜60°C、更佳30〜50°C。電解處理時之電流密度較佳為 0.5〜ΙΟΑ/dm2、更佳1〜7A/dm2。電解處理時間較佳為5〜4〇 秒、更佳10〜30秒。 作為檸檬酸銅鑛浴,較佳為例如含有硫酸銅5水合物及檸 檬酸3鈉2水合物的鍍浴。擰檬酸鋼鍍浴中之硫酸銅5水合 物的濃度,較佳為l〇g/L〜50g/L、更佳2〇g/L〜40g/L。擰檬 酸3鈉2水合物的濃度較佳為2〇g/L~60g/L、更佳 30g/L〜50g/L。鍍浴之溶媒通常為水。鍍浴之pH較佳為 5.5〜7.5、更佳6.0〜7.0。鍍浴之溫度較佳為2〇〜6(rc、更佳 30〜50°C。電解處理時之電流密度較佳為〇 5〜8A/dm2、更佳 1〜4A/dm2。電解處理時間較佳為5〜40秒、更佳1〇〜3〇秒。 作為擰檬酸銅錄鍍洛,較佳為例如含有硫酸銅5水合物、 硫酸錄6水合物及擰檬酸3鈉2水合物的鍍浴。檸檬酸銅錄 鍍浴中之硫酸銅5水合物的濃度較佳為i〇g/L〜5〇g/L、更佳 20g/L〜40g/L。硫酸鎳6水合物的濃度較佳為lg/L〜1〇g/L、 更佳3g/L〜8g/L。檸檬酸3鈉2水合物之濃度較佳為 2〇g/L〜60g/L、更佳30g/L〜50g/L。鍍浴之溶媒通常為水。鍍 浴之PH較佳為5.5〜7·5、更佳6.0〜7·〇。鍍浴之溫度較佳為 2〇〜6(rc、更佳30〜5(rc。電解處理時之電流密度較佳為 0.5〜8A/dm2、更佳i^A/dm2。電解處理時間較佳為5〜4〇秒、 更佳10〜30秒。 上述剝離層係金屬物等之無機化合物或有機化合物層,若 101102461 47 201251532 為即使受到積層時之100〜300°c之間的熱處理仍可剝離者 則可使用公知物《作為金屬氧化物,可使用例如鋅、鉻、鎳、 銅、鉬、合金系、金屬與金屬化合物等之混合物。作為有機 化合物,較佳係使用由選自含氮有機化合物、含硫有機化合 物及羧酸中之1種或2種以上所構成者。 上述含氮有機化合物較佳係具有取代基之含氮有機化合 物。具體而言’較佳係使用具有取代基之屬於三唑化合物的 1,2,3-本并二嗤(以下稱為「BTA」)、叛基笨并三σ坐(以下稱 為「CBTA」)、Ν’,Ν’-雙(苯并三唑基曱基)脲(以下稱為 「BTD-U」)、1Η-1,2,4-三唑(以下稱為「ΤΑ」)及3_胺基 -1Η-1,2,4-三唑(以下稱為「ΑΤΑ」)等。 作為含硫有機化合物,較佳係使用鲸基苯并噻唑(以下稱 為「ΜΒΤ」)、硫基二聚氰酸(以下稱為「tca」)及2-苯并 咪唑硫醇(以下稱為「BIT」)等。 作為叛酸,特佳為使用單幾酸,其中較佳為使用油酸、亞 麻油酸及次亞麻油酸等。 如上述,藉由提高電解密度、減薄膜厚等適當地控制製 法,則可於本實施形態之銅ϋ層1G4上面實現所需的配向 性。 另外,本實施形態所使用之鋼簿層1〇4之至少下面22(與 絕緣層H)2之-面相接的面)’為了使鋼料刚與絕緣層 102間之密黏性成為實用水準以上,亦可實施表面處理。作 101102461 48 201251532 為對銅箔層104所使用之金屬箔的粗處理,可舉例如防錢声 理、鉻酸處理、矽烷偶合處理之任一種或此等之組合等。n J 一 配合構成絕緣層102之树月曰材料,適當選擇任一之表面處理 手段。 上述防銹處理可藉由例如將鎳、錫、辞、鉻、紹、錄等金 屬之任一者或其等之合金,藉濺鍍或電鍍、無電解鍍覆而於 金屬箔上形成薄膜而貫施。由成本面而言,較佳為電錢。為 了使金屬離子之析出容易,亦可添加必要量的檸檬酸鹽、酒 石@欠鹽、%胺酸等之錯化劑。鍍液通常依酸性區域使用,並 依室溫W如25 c)〜80¾的溫度進行嘯覆條件係由電流密 度0.1〜ΙΟΑ/dm,通電時間丨〜6〇秒,較佳丨〜如秒的範圍適 當選擇。防銹處理金屬之量係視金屬種類而異,合計較佳為 1〇〜2〇〇—。若防鱗處理過厚,則引起姓刻阻礙與電氣 特!之降⑹I過薄則成為與樹脂間之剝離強度降低的 因。 _文 另卜在構成絕緣層1G2之樹脂組成物中含有氰酸醋樹脂 時、車乂佳係藉由含鎳之金屬進行防聽理。於此組合時,耐 …劣化4驗或耐减劣化試驗中之剝離強度的降低較少 有用。 蜀 、作為上述鉻酸處理,較佳係使用含有六價鉻離子的水溶 液。鉻酸處理可A留 卜 令早純的浸潰處理,但較佳係依陰極處理進 π ^佳係依重路酸納0.1〜50g/L、pHl〜13、浴溫〇〜60〇c、 101102461 49 201251532 電流密度0.1〜5A/dm2、電解時間 可取代祕韻,㈣祕1¾麵X秒Γ件進行。亦 理較佳係於上述防銹處理上重聂 ,上述鉻酸處 •耳施。藉此,可 組成物層(絕緣層102)與金屬j使絕緣樹脂 加提升。 S '肖層1G4)間之密黏性更 作為上述矽烷偶合處理所使用之 3-環氧丙氧基丙基三甲氧基魏、2、(3:環使用例如 乙 三曱氧基⑽之環氧官能性錢、3:胺基心:= 烧、叫胺基乙基)3_胺基丙基三曱氧基錢、叫絲乙 基)3_胺基丙基甲基二甲氧基錢等之胺基官能性錢t 稀基三曱氧基魏、乙稀絲基三f氧基魏、乙締基參二 甲氧基乙氧基)魏等之烯烴官能性㈣、3_丙烯氧基丙基 三曱氧基魏等之㈣酸官能性魏、3·甲基㈣氧基丙基 三曱氧基魏等之曱基丙雜官能性魏、3錄丙基三甲 氧基矽烷等之巯基官能性矽烷等。此等可單獨使用,亦可混 合複數種使用。此等偶合劑可於水等之溶媒中依〇1〜15g/L 之濃度溶解使用,藉由將所得溶液依室溫〜50°C之溫度而塗 佈或電著於金屬箔,則使矽烷偶合劑吸黏於金屬箔。此等矽 烧偶合劑係藉由與金屬落表面之防銹處理金屬的羥基進行 縮合鍵結’而於金屬箔上形成被膜。矽烷偶合處理後,藉由 加熱、%外線照射等,使此種鍵結穩定。於加熱處理中,較 佳係進行例如100〜2〇〇°C之溫度、2〜60秒之乾燥。紫外線 101102461 50 201251532 照射較佳係依例如波長200〜400nm、2〇〇〜25〇〇mJ/cm2之範 圍進行。另外,矽烷偶合處理較佳係於金屬箔最外層進行。 在構成絕緣層102之絕緣樹脂組成物中含有氰酸酯樹脂 時,較佳係藉胺基矽烷系的偶合劑進行處理。此組合係於耐 熱劣化試驗或耐濕劣化試驗中的剝離強度降低較少,而屬有 用。 另外,作為矽烷偶合處理所使用之矽烷偶合劑,較佳係藉 60〜200 C、更佳80〜150°C之加熱,而與構成絕緣層1〇2之 絕緣樹脂組成物進行化學反應者。藉此,上述絕緣樹脂組成 物中之官能基與石夕烧偶合劑的官能基進行化學反應,可得到 更優越的密黏性。例如,對於含有環氧基之絕緣樹脂組成 物,較佳係使用含有胺基官能性矽烷的矽烷偶合劑。其理由 在於,藉由熱則環氧基與胺基容易形成牢固的化學鍵結,此 鍵結對熱或水份極為穩定所致。如此,作為形成化學鍵結的 .組合,可例示環氧基-胺基、環氧基·環氧基、環氧基_巯基、 J哀氧基•羥基、環氧基-羧基、環氧基_氰基、胺基_羥基、胺 基-羧基、胺基-氰基等。 另外,本實施形態所使用之絕緣樹脂組成物的絕緣樹脂, 較佳係使用於常溫下呈液狀的環氧樹脂,此時,由於炼融時 之黏度大幅降低,故接黏界面之濕潤性提升,容易發生環氧 樹脂與矽烷偶合劑的化學反應,其結果,可得到牢固的剝離 強度。具體而言’較佳係環氧當量2〇〇左右之雙酚A型環 101102461 51 201251532 氧樹脂、雙酚F型環氧樹脂、苯酚酚醛清漆型環氧樹脂。 另外’在絕緣樹脂組成物含有硬化劑時,作為硬化劑,特 佳係使用熱硬化型潛在性硬化劑。亦即,在絕緣樹脂組成物 中之官能基與矽烷偶合劑之官能基進行化學反應的情況,較 佳係依絕緣樹脂組成物中之官能基與矽烷偶合劑之官能基 的反應溫度為低於使絕緣樹脂組成物之硬化反應起始之溫 度的方法選擇硬化劑。藉此,絕緣樹脂組成物中之官能基與 矽烷偶合劑之官能基的反應優先、選擇性地進行,金屬箔(銅 v白層104)與絕緣樹脂組成物層(絕緣層1〇2)的密黏性變高。 作為對於含有環氧樹脂之絕緣樹脂組成物的熱硬化型潛在 性硬化劑,可舉例如二氰二醯胺、二醯肼化合物、咪唑化合 物、胺·環氧基加成物等之固體分散-加熱溶解型硬化劑或尿 素化合物、鏽鹽類、三氯化硼·胺鹽類、嵌段羧酸化合物等 之反應性基嵌段型硬化劑。 藉由將含有上述般之絕緣樹脂組成物之預浸體,與粗化面 經細微並均勻之粗處理、且實施經上述表面處理的具有载體 箔之極薄銅箔,藉上述方法進行積層一體化,則形成如圖 7(a)所示的具有載體箔的銅箔積層板1〇 ^接著,如圖7(b) 所示,藉由拉除該載體箔層106,則可得到於絕緣層1〇2兩 面具有鋼、冶層104的銅免積層板1 〇〇。又,並不限定於此態 .樣,銅箔層104可形成於絕緣層102之至少一面,或可形成 於絕緣層102之整面或一部分上。 101102461 52 201251532 接著,如圖7(c)所示般,於銅箔積層板1〇(),形成由其上 面起貝通至下面的層間連接用之貫通孔1〇8。形成貫通孔 108的方法’可使用各種公知手段,例如,在形成孔徑為 ΙΟΟμηι以上之貫通孔1〇8時,由生產性的觀點而言,適合使 用鑽頭等的手段’在形成1〇〇,以下之貫通孔1〇8時,適 合使用碳酸氣體或激元等之氣體雷射或YAG等之固體雷射 的手段。 接著可於至少銅箔層1〇4上賦予觸媒核,但本實施形態 中,係於銅箱層104整面上及貫通孔1〇8内壁面上賦予觸媒 核。作為該觸媒核並無特靠定,例如可使用f金屬離子或 銘膠體。接著,以該觸媒核作為核而形成無電解鍍覆層,但 在此無電解鑛覆處理前,亦可對銅_ 1〇4或貫通孔⑽ 之表面上,進行例如藉由驗的衫等。作為去污處理並益 特別限定,可使㈣用具有有機物分解相之氧化劑溶液^ 的濕式法’以及對成為對象物者直接照射氧化作用較強之活 性種(㈣、自由衫)以去除有機物⑽的钱法等之乾式 ?等公知方法。㈣H之切㈣,諸可舉例如在經 =脂表面之膨潤處理後,藉鹼處理進行钱刻,接著進行 中和處理的方法等。 接著,如圖7(d)所示般,在已賦予觸媒核之銅㈣刚 上及貫通孔⑽㈣上’藉由無電解Μ處理形成薄層之益 電解鍍覆層m。該無電解㈣層⑽,係將絕緣層呢之 101102461 53 201251532 上面上的銅ί|層104與其下面上之銅箔層1〇4進行電性連 接。無電解鍍覆時,可使用例如含有硫酸銅、甲醛、錯化劑、 氫氧化鈉等者。又,於無電解鍍覆後,較佳係施行1〇〇〜25〇t>c 之加熱處理,使鋪被膜穩定化。由可形成能抑制氧化的被 膜的觀點而言,特佳為120〜18(rc之加熱處理。又,無電解 鍍層110之平均厚度若為可進行下述電鍍的厚度即可,例如 0.1〜左右即足夠。又,貫通孔108之内部可填充導電糊 料或絕緣糊料,亦可藉電氣圖案鍍覆進行填充。 接著,如圖7(e)所示,在設於銅箔層1〇4上之無電解鍍覆 層110上形成具有既定開口圖案的抗鍍層112。該開口圖案 相當於後述之導電電路圖案。因此,抗鍍層112係設置成被 覆銅络層104上之非電路形成區域。換言之,抗錄層112 並未形成於貫通孔1〇8上與銅箔層104上之導體電路形成區 域。作為抗鍍層112並無特別限定,可使用公知材料,但可 使用液狀及乾薄膜。在形成細微佈線的情況,作為抗鑛層 112,較佳係使用感光性乾薄膜等。在形成抗鍍層ιι2時, 係例如於無電解鍍覆層11〇上積層感光性乾薄膜,對非電路 形成區域進行曝光使其光硬化,將树光部藉㈣液進行溶 解、去除。又,殘存之經硬化喊光性乾薄膜將成為抗鐘層 112。抗鍍層112之厚度,較佳係設為與其後所艘覆之導體(鑛 覆層114)厚度相同程度或更厚的膜厚。 接著’如圖8(a)所示’至少於抗蝕層112之開口圖案内部 101102461 54 201251532 且無電解鍍覆層110上,藉電鍍處理形成鍍覆層114。此時, 銅箔層104係作成給電層而作用。本實施形態中,涵括絕緣 層102之上面、貫通孔1〇8之内壁及其下面,亦可連續設置 鍍覆層114。作為此種電鍍,並無特別限定,可使用一般印 刷佈線板所使用的公知方法,例如可使用在使其浸潰於硫酸 銅等之鍍液中的狀態,對該鍍液流通電流等的方法。鍍覆層 114之厚度並無特別限定,若可使用作為電路導體即可,例 如較佳為1〜ΙΟΟμιη之範圍、較佳5〜5〇μηι之範圍。鍍覆層 1M可為單層或具有多層構造。作為鍍覆層U4之材料並無 特別限定,可使用例如銅、銅合金、42合金、鎳、鐵、鉻、 鎢、金、焊錫等。 接著,如圖8(b)所示般,使用鹼性剝離液或硫酸或市售之 抗鍍剝離液等去除抗鍍層112。 接著,如圖8(c)所示般,將形成有鍍覆層U4之區域以外 的無電解鍍覆層no及銅箔層104去除。去除該銅箔層1〇4 之手法係例如使用軟蝕刻(快速蝕刻)等。藉此,可形成積層 銅箱層104及金屬層116(無電解鍍覆層u〇及鍍覆層ιΐ4) 而構成的導電電路118的圖案。 作為第2實施形態之印刷佈線板2〇〇之導電電路U8的剖 面形狀,係如圖9所示般’除了 —般的矩形形狀以外,亦; 為圖9⑷所示之倒錐形狀、目9⑻所示之魚板(半惰圓)形 狀、或圖9(c)所示之縮頸形狀的任一種。 乂 101102461 55 201251532 於 =針對本㈣料之軟_所使料_液進行說 ::刻液並無特别限定,在使用了習知之擴散控制型 ===’有佈線之細微部分因液之交換變差而電路形成 匕㈣傾向。因此’_液最好使用銅與 依反應控制進行的類型,而非艮憋馬 ,庙擴散控制型。若鋼與㈣液之 反y反應控制’則即使擴散增強至其以上,_速度仍不 ,。即使’不發生液交換較佳處與較差處間的蝕刻速度 作為_反應㈣飿刻液,可舉例如過氧化氫與不含齒 :由=Γ分者。由於使用過氧化氫作為氧化劑,故 度’則可嚴密地控制_速度。又,若於㈣ * t入_ 70素則办解反應容易變成擴散控制。作為不含 =讀,可使用石肖酸、硫酸、有機酸等,而硫酸因廉價而 父再者’在以硫酸與過氧化氯作為主成分 度、液之穩定性方面而言,較佳係其各別濃度為5〜與2 5 200g/卜可舉例如過硫酸錢、過硫酸納、過硫酸納系等。 如此,藉由適當選擇鋼^刚之飯刻特性或㈣條件, 則可付到所需形狀的導電電路118。藉由以上,可得到錢 緣層⑽之兩㈣成有導電電路m的印刷佈線板2〇〇。 又’第2貫施形態之印刷佈線板·之製造方法中,可 與第1貫施形態相同的作用效果。 尚且,如圖8(CM)所示般,亦可依被覆絕緣層102上及導 電電路118之一部分的方式形成抗焊層12〇。作為抗焊層 101102461 56 201251532 120,可使用例如可含有絕緣性優越的充填材或基材之感光 性樹脂、熱硬化性樹脂及熱可塑性樹脂等的耐熱性樹脂組成 物。接著’在抗焊層12〇之設有開口部的導電電路118上, 進一步形成第1鍍覆層112及第2鍍覆層124。藉此,玎將 金屬層116作成為2層以上的多層構造。作為此等之第1 鍍覆層112及第2鍍覆層124,玎採用鍍金層。作為鍍金之 方法,可為習知方法而無特別限定’例如,在鍍覆層I14 上,進行0.1〜ΙΟμιη左右無電解鍍錄’於進行取代鍍金 0.01〜0.5μιη左右後,進行無電解鍍金0·1〜2μιη左右等的方 法。藉由上述,可得到圖8(d-l)所示的印刷佈線板202。 另外,如圖8(d-2)所示般’亦可不形成抗焊層120,於導 電電路118周圍,形成第1鍍覆層122及第2鍍覆層124。 作為此等之第1鍍覆層122及第2鐘覆層124,可採用例如 鍍鎳層及鍍金層的積層體。藉上述’可得到圖8(d-2)之印刷 佈線板204。 另外,此種之印刷係線板200、202及204上安襄未圖示 的半導體晶片,可得到半導體裴置。 (第3實施形態) 接著說明第3實施形態之印刷佈線板的製造方法。 圖10〜圖12係表示第3實施形態之印刷佈線板之製造方 法的製造步驟順序的剖面圖。第3實施形態之印刷佈線板之 製造方法,係例如使用第2實施形態所得之印刷佈線板 101102461 57 201251532 200、202及2〇4作為内層電路基板,於其内層電路基板上 進一步形成増建層者。 首先,採用圖8 (c)所得之印刷佈線板2 〇 〇作為内層電路基 板。對該印刷佈線板200之内層電路(導電電路118)實施粗 化處理。於此,所謂粗化處理,係指對導體電路表面實施藥 液處理及電漿處理等。作為粗化處理,可使用例如利用氧化 還原的黑化處理,或利用了硫酸-過氧化氫系之公知粗化液 的藥液處理4。藉此,可使構成絕緣層130之層間絕緣材料 與印刷佈線板200之導電電路118間的密黏性提升。又,内 層電路基板亦可取代第2實施形態所得之印刷佈線板2〇〇 , 而無特別限定,可使用藉由鍍通孔法或增建法等積層了不含 預改體或基材之樹脂組成物層等的一般之多層印刷佈線 板。成為内層電路之導體電路層,可藉習知之電路形成方法 所形成。又,在多層印刷佈線板中,可藉由對成為該核層之 積層體(複數積層有預浸體而得的積層體)及金屬箔積層 板’進行鑽孔加工、雷射加工等而形成通孔,接著藉鍍覆等 將兩面之内層電路電性連接。 接著,如圖1〇⑷所示般,在使導體電路表面經粗化之印 刷佈線板200兩側,分別配置絕緣層ι〇3(預浸體)、及具有 載體箔層107之銅箔層1〇5(具有載體箔之極薄銅箔)。接 著,如圖10(b)所示般,藉由對重疊此等的積層體進行加熱 加壓處理,形成多層積層板。接著,如圖10(c)所示般,將 101102461 58 201251532 載體箔層107剝離去除。 接著,如圖10(d)所示’去除絕緣層13〇及銅箔層1〇5之 一部分而形成孔109 ?於孔109之底面,露出導電電路118 之表面一部分。作為形成該孔109的手法並無特別限定,例 如可使用利用了碳酸氣體或激元等之氣體雷射或Μ等之 固體雷射’形成孔徑·μιη以下的f通孔的料等。又, 孔109係於圖1Q中,表示成非貫通孔,但亦可為貫通孔。 又,在貫軌的情況,即使是雷射騎,亦 機而形成。 q躓扎加工 接著,如®11⑻解,在上之導 上、孔109之内壁上、及銅箔岸 ^ a g 105上’形成薄層之I雷鯀 鍍覆層。無電解鍍覆層ηι係與 …、電解 地形成。在該無電解鍍覆前,如以,、*覆層則同樣 辇沾土s 上述’亦可進行藥液之去污 相去處理。又,無電_覆層⑽之厚 去5 述電鑛的厚度即可,(U〜_左右以夠。=、可進行下 孔)内部可填充導電糊料或絶緣糊料 109(盲通 鍍覆進行填充。 争无错電氣圖案 接著,如圖11⑻所示,在無電解 當於導體電路圖案之具有開D圖沾\ θ 上,形成相 藉由形成抗鍍層113 ’而遮罩非雷、域層113。換言之, 113 ’可使用與上述抗鐘層112相同者。'為該抗鍍層 較佳係没為與其後鑛覆之導體 ' 丨13之厚度 _461 料厚度為相㈣度或更厚 201251532 的膜厚。 接著,如圖11(c)所示,於抗鍛層113之開口圖案内部形 成鍍覆層132。此鍍覆層132可形成於孔1〇9内部之導電電 路118上’亦可形成於上述開口圖案内部之無電解錢覆層 111上。形成鍍覆層132之電錢,可使用與上述鑛覆層114 相同的手法。該鍍覆I 132之厚度若可使用作為電路導體即 可,較佳為例如1〜ΙΟΟμιη之範圍,更佳5〜5〇μιη之範圍。 接著,如圖12(a)所示般,與上述抗鍍層U2同樣地,進 行抗鍍層113之剝離《接著,如圖12(b)所示般,與上述銅 箔層104同樣地,將銅箔層1〇5及無電解鍍覆層ηι藉軟蝕 刻(快速蝕刻)而去除。藉此,可形成由銅箔層1〇5、無電解 鍍覆層111及鐘覆層132所構成的導電電路圖案。又,導電 電路118上,可藉由鍍覆層132形成與導電電路118電性連 接的通孔及墊。藉以上,得到印刷佈線板2〇 1。 尚且’如圖12(c-l)所示般’亦可於絕緣層13〇上、導電 電路圖案之鍍覆層132上及墊之鍍覆層132之一部分上形成 抗焊層121。作為抗焊層121,可使用與上述抗焊層12〇相 同者。接著’在抗焊層121之設有開口部的鍍覆層132上, 可進一步形成例如由鑛鎳層及鍍金層所構成的第1鍍覆層 123及第2鍍覆層125。藉以上,可得到圖12(〇1)所示的印 刷佈線板203。 另外,如圖12(c-2)所示般,亦可不形成抗焊層121,在導 101102461 60 201251532 電電路圖案之周圍及塾之周圍,形成上述第!錢覆層123 及第2鍍覆層125。藉由以上,可得到圖12(c_2)所示的印刷 佈線板205。第3實施形態中,亦可得到與第!及第2實施 形態相同的效果。 另外,使用圖13說明本實施形態之印刷佈線板的製造方 法的變形例。 於上述第1至第3實施形態中,雖於銅箱上選擇性地形成 金屬廣,但本變形例中,不同的點在於係在㈣上整面地形 成金屬層。 以下,說明本變形例之印刷佈線板的製造方法。 首先’如圖13⑷所示’準備具有載體箱之銅箱積層板1〇。 於該具有載mi之鋼_層板1G中,在絕緣層搬之兩面 貼附銅馆層104與載體箱層106。接著,如圖剛所示, 由具有載體fl之鋼·積層板1G拉除載體_ 接著, 如圖13⑷所示般,在銅㈣1〇4之整面上藉鐘覆處理形成 金層層115(錢覆層)。接著,如圖13(d)所示般,在平坦形狀 之金屬層115上形成具有既定開口圖案的減層112。接 著4 ® ()所不般’藉由例如餘刻去除該抗鍵層之 開口圖案内的金屬層115及銅落層104。其後,如圖13⑴ 所又去除抗錢層112。藉此,可形成由銅猪層⑽及金 屬層US所構成的導電電路119之圖案。藉由以上步驟,可 得到本變形例的印刷佈線板101。 101102461 201251532 如以上,根據本實施形態,可提供具有載體箱之極薄_ 的細微電路加玉、細微電路之形狀、及絕緣可靠性優越 刷佈線板的製造方法、以及該印刷佈線板。 17 本實施形態之印刷佈線板之製造方法,不僅是於印刷 板用基板之兩面上形成導體電路層的情況,亦可應用至_ 印刷佈線顧基板之單面切料體電路㈣情況。又 可應用至如圖8 (c)所示般以兩面印刷佈線板作為内層電政 板第3實施形態之多層印刷佈線板的情形。因此,轉由 實施形態之印刷佈線板之製造方法,可製造單面印刷 板、兩面印刷佈線板以及多層印刷佈線板的任一種。'、、 以下,製U本發明之具有载體箱之電解銅箱 、及使用了兮 銅治之銅力積層板,針對本判之印猶線板之製造方 實施形態進行說明。於此,係以在《fl中使用電解銅馆的 情況為中心進行朗1下根據實施例及比較例詳細說 發明,但本發明並不限定於此。 (實施例) (金屬箔1之製造) 於載體落,在18μηι厚之電解銅羯(三井金屬工業公司製, 3EC VLP,光澤面之表面粗度為Ra=〇.2jim、Rz=l»之 澤面依序形成接合界φ層及極薄銅錢。作·祕件,會 先將載體油浸漬於酸洗淨槽(稀硫酸溶液,⑼心,液溫3% 中20秒而去除表面的油分、氧化被膜等。接著,浸潰於接 101102461 62 201251532 &界面形成槽(缓基笨并二唾溶液,5g/L,液溫仙。c,, 於載體fl之光澤表面上形成接合界面層。接著,—邊浸潰於 塊材銅之形成槽(硫酸銅溶液;硫酸濃度150g/L,銅濃度 65g/L,明膠濃度5ppm,氯化物離子l〇ppm,液溫45。〇中, 一邊對载㈣之單面,平行配置平板的陽極電極㈤,依電 流密度20A/dm2之平滑鍍覆條件進行電解,形成15μιη的 塊材銅層。接著,於塊材銅層之表面,一邊浸潰於細微銅粒 开>成槽(硫酸銅溶液;硫酸濃度1〇〇g/L,銅濃度18g/L之硫 酸浴液,液溫25。〇中,一邊對載體箔之單面,平行配置平 板的陽極電極(鉛)’依電流密度1〇A/dm2之燒鍍條件進行電 解。接著,一邊浸潰於用於防止細微銅粒脫落的被鍍槽(硫 酸銅溶液;硫酸濃度15〇g/L,銅濃度65g/L,液溫45〇C)中, 一邊依電流密度20A/dm2之平滑鍍覆條件進行電解,形成 0.5μιη的細微粗化,製造總厚2.Ομπι極薄銅箔。接著,浸潰 於防銹處理槽(硫酸辞溶液;硫酸濃度7〇g/L,鋅濃度20g/L, 液溫40°C) ’依電流密度i5A/dm2進行電解並使用鋅進行防 銹處理。於此,作為陽極電極,係設為使用了鋅板的溶解性 陽極。接著’浸潰於鉻酸處理槽(鉻酸溶液;鉻酸濃度5g/L, pH11.5,液溫55°C)中4秒。最終,於乾燥處理槽中使其歷 時60秒通過藉電熱器加熱至環境溫度11(rc的爐内,得到 具有載體箔的銅箔。又,於各槽之步驟間,係於可進行水洗 之水洗槽中進行約30秒的浸潰洗淨。 101102461 63 201251532 (金屬箔2之製造) 於载體落,在12叫厚之電解銅簿(古河電氣工業公司製, F2-WS ’光澤面之表面粗度為2帅、Rz=丨2㈣之光澤 面上依序形成接合界面層及極薄鋼層。作為製造條件,首 先將載體II浸潰於酸洗淨槽(稀硫酸溶液,15〇g/L,液溫30。〇 中20秒而去除表面的油分、氧化被膜等。接著,浸潰於接 合界面形成槽(羧基苯并二唑溶液,5g/L,液溫4〇它,pH5), 於載體箔之光澤表面上形成接合界面層。接著,一邊浸漬於 塊材銅之形成槽(硫酸銅溶液;硫酸濃度15〇g/L,銅濃度 65g/L,明膠濃度5ppm,氣化物離子3〇ppm,液溫45。〇中, 一邊對載體箔之單面,平行配置平板的陽極電極(鉛),依電 流岔度25A/dm2之平滑鍍覆條件進行電解,形成丨5μιη的 塊材銅層。接著,於塊材銅層之表面,一邊浸潰於細微銅粒 形成槽(硫酸銅溶液;硫酸濃度l〇〇g/L,銅濃度I8g/L之硫 谷液,液溫25°C)中,一邊對載體箔之單面,平行配置平 板的陽極電極(鉛),依電流密度ΙΟΑ/dm2之燒鍍條件進行電 解。接著’一邊浸潰於用於防止細微銅粒脫落的被鍍槽(硫 酸銅溶液;硫酸濃度15〇g/L,銅濃度65g/L,液溫45。〇中, 一邊依電流密度20A/dm2之平滑鍍覆條件進行電解,形成 0.5μιη的細微粒化,製造總厚2 〇μιη極薄銅箔。接著,浸潰 於防錄處理槽(硫酸鋅溶液;硫酸濃度70g/L,鋅濃度20g/L, 液溫40°〇,依電流密度i5A/dm2進行電解並使用鋅進行防 101102461 64 201251532 銹處理。於此,作為陽極電極,係設為使用鋅板的溶解性陽 極。接著,浸潰於鉻酸處理槽(鉻酸溶液;鉻酸濃度5g/L, ρΗ11·5,液溫55°C)中4秒。最終,於乾燥處理槽中使其歷 時60秒通過藉電熱器加熱至環境溫度ii(TC的爐内,得到 具有載體箔的銅箔。又,於各槽之步驟間,係於可進行水洗 之水洗槽中進行約30秒的浸潰洗淨。 (金屬箔3之製造) 於載體箔,在12μιη厚之電解銅箔(古河電氣工業公司製, F2-WS ’光澤面之表面粗度為Ra=〇 2μιη、Ι1ζ=1.2μιη)之光澤 面上依序形成接合界面層及極薄銅箔層。作為製造條件,首 先將載體箔浸漬於酸洗淨槽(稀硫酸溶液,l5〇g/L,液溫30。〇 中20秒而去除表面的油分、氧化被膜等。接著,浸潰於接 合界面形成槽(羧基苯并三唑溶液,5g/L,液溫40°C,pH5), 於載體箔之光澤表面形成接合界面層。接著,一邊浸潰於塊 材銅之形成槽(焦磷酸銅溶液;焦磷酸鉀濃度25〇g/L,銅濃 度25g/L,pHll,液溫45。〇中,一邊對載體箔之單面,平 行配置平板的陽極電極(鉛),依電流密度1〇A/dm2之平滑鍍 覆條件進行電解,形成1.5gm的塊材銅層。接著,於塊材銅 層之表面,一邊浸潰於細微銅粒形成槽(硫酸銅溶液;硫酸 濃度100g/L,銅濃度i8g/L之硫酸溶液,液溫25。〇中,一 邊對載體羯之單面,平行配置平板的陽極電極(鉛),依電流 氆度ΙΟΑ/dm之燒鍍條件進行電解。接著,一邊浸潰於用於 101102461 65 201251532 防止細微銅粒脫落的被鍍槽(硫酸銅溶液;硫酸濃度 150g/L,銅濃度65g/L,液溫45°C)中,一邊依電流密度 20A/dm2之平滑鍍覆條件進行電解,形成〇.5μιη的細微粗 化,製造總厚2·0μιη極薄銅箔。接著,浸潰於防銹處理槽(硫 酸鋅溶液;硫酸濃度70g/L,鋅濃度20g/L,液溫40°C),依 電流密度15A/dm2進行電解並使用鋅進行防銹處理。於此, 作為陽極電極,係設為使用鋅板的溶解性陽極。接著,浸潰 於鉻酸處理槽(鉻酸溶液;鉻酸濃度5g/L,pH11.5,液溫55。〇 中4秒。最終,於乾燥處理槽中使其歷時6〇秒通過藉電熱 器加熱至環境溫度1HTC的爐内,得到具有載體箔的銅箔。 又’於各槽之步驟間,係於可進行水洗之水洗槽中進行約 30秒的浸潰洗淨。 (實施例1) 將作為環氧樹脂之萘改質曱酚酚醛清漆環氧樹脂(DIC公 司製,ΗΡ·50〇〇)8.5重量份、作為酚硫化劑之聯笨芳烷基型 紛樹脂(明和化成股份有限公司,MEH7851-4H)8.5重量份、 苯齡盼盤清漆型氰酸酯樹脂(LONZA公司製,primaset PT-30)17重量份、球狀熔融二氧化矽(Admatechs公司製, SO 25R平均粒控〇 5(im)65 5重量份、環氧基石夕烧(信越化 學工業公司製,KBM-4()3)G.5重量份’於曱基乙基酮中混合 溶解。接著,使用高速攪拌裝置進行攪拌,調整成不揮發份 7〇重量%,調製樹脂清漆。 101102461 66 201251532 將上,樹骑清漆浸含於玻璃織布(基重心,厚87μιη, 曰^紡::破螭織布’ WEA_U6E)中,依⑼。。加熱爐進行 乾燥2分鐘’得到預浸體中之清漆固形份為約5G重量%的 預碰。將上述預浸體重#2片,並重疊具有載體^極0薄 銅箱(金屬箱υ,依壓力、溫度靴進行加熱加壓成 形1小時,得到絕緣層為厚〇.2〇_之兩面具有鋼箱的積芦 板(圖 7(a))。 將實施例所得之積層板的紐奸關離去除(圖7(b)), 如圖7(c)所示般,由極薄金屬箱上藉由碳酸氣體雷射(三菱 電機公司製,紙6(^乂3_51001;2)1穿直徑75帅的貫 通通孔,於過錳酸鉀60g/L與氫氧化鈉45g/L之水溶液中, 依溫度80°C浸潰2分鐘,進行去污處理。 其後’於麵溶液(上村工業公司製,MAT-2B/MAT-2A)中依 溫度55 C浸潰5分鐘,賦予觸媒,使用上村工業公司製之 THUR-CUP PEA-6A,依溫度36°C浸潰15分鐘,形成無電 解鍍覆層0.7μιη(圖7(d))。 於該無電解鍍覆層之表面,藉由熱輥層合器貼合厚25μιη 之紫外線感光性乾薄膜(旭化成公司製,SUNFORT UFG-255),使用描晝了最小線寬/線間為2〇/2〇pm之圖案的 玻璃遮罩(Topic公司製),對準位置,藉曝光裝置(小野測器 EV-0800)進行曝光,於碳酸鋼水溶液進行顯影,形成抗鑛遮 罩(圖7(e))。接著’以無電解鍍覆層作為給電層電極,依 101102461 67 201251532 3A/dm2、25分鐘進行電鍍銅(奥野製藥公司製81-HL),形成 厚約20μιη的銅佈線圖案(圖8(a))。接著,使用剝離機,藉 由單乙醇胺溶液(三菱氣體化學公司製R-100),將上述抗鍍 遮罩剝離(圖8(b〇)。然後,將屬於給電層之無電解鍍覆層及 基底銅箔(2μιη)藉快速蝕刻(三菱氣體化學公司製 CPE-800,液溫:30°C,喷霧器壓〇.23MPa)進行處理180秒 而予以去除,形成L/S=20/2(^m之圖案(圖案狀蝕刻),得到 印刷佈線板(圖8(c))。 最後,如圖8(d-l)所示般,於電路表面形成抗焊層(太陽 油墨公司製,PSR4000/AUS308),將鍍鎳層(奥野製藥工業 公司製,ICP NICORON GM)依溫度80°C浸潰12分鐘而形 成2.5μιη,接著將鍍金屬(奥野製藥工業公司製,FLASH GOLD330)依溫度80°C浸潰9分鐘而形成0·05μιη,得到印 刷佈線板。又,亦有如圖8(d-2)所示般,於電路表面未形成 抗焊層的情形。 (實施例2) 除了將具有載體箔之極薄銅箔改變為金屬箔2以外,其餘 與實施例1相同。 (實施例3) 除了將具有載體箔之極薄銅箔改變為金屬箔3以外,其餘 與實施例1相同。 (實施例4) 101102461 68 201251532 除了將屬於給電層之無電解鍍覆層及基底銅箔(2μπι)之快 速钮刻條件變更如下述以外,其餘與實施例1相同。 將屬於給電層之無電解鍍覆層及基底銅箔(2μιη)藉快速蝕 刻(三菱氣體化學公司製CPE-800,液溫:30〇c,噴霧器壓 0.23MPa)進行處理240秒而予以去除,形成L/s=2〇/2〇, 之圖案(圖案狀蚀刻),得到印刷佈線板。 (實施例5) 除了改變積層板所使用之樹脂組成物以外,其餘與實施例 1相同。 將作為環氧樹脂之聯苯芳烧基型環氧樹脂(日本化藥公司 製,NC-3000)11重量份、雙順丁烯二醯亞胺化合物(KI化成 工業公司製,BMI-70)20重量份、4,4’-二胺基二苯基曱烷3.5 重量份、氫氧化鋁(昭和電工製HP-360)65重量份、環氧基 矽烷(信越化學工業公司製,KBM-403)0.5重量份,於曱基 乙基酮中混合溶解。接著,使用高速攪拌裝置進行攪拌,調 整成不揮發份70重量%,調製樹脂清漆。 將上述樹脂清漆浸含於玻璃織布(基重l〇4g,厚87μηι, 曰東紡製Ε玻螭織布,WEA-116E)中,依15(TC加熱爐進行 乾燥2分鐘’得到預浸體中之清漆固形份為約50重量%的 預浸體。將上述預浸體重疊2片,並重疊具有載體箔之極薄 銅羯(金屬箔1),依壓力3MPa、溫度200°C進行加熱加壓成 形1小時’得到絕緣層為厚〇.2〇mm之兩面具有銅箔的積層 101102461 69 201251532 板。 (比較例l) (金屬箔4之製造) &載體’在35μηι厚之電解㈣(古河電氣王業公司製, F2 WS ’光澤面之表面粗度為Ra=〇 #m、Rz=1 2μιη)之光澤 面上依序形成接合界面層及極薄銅结層。作為製造條件,首 先將載體箔浸潰於酸洗淨槽(稀硫酸溶液 ,150g/L,液溫 30。〇 中20秒而去除表面的油分、氧化被膜等。接著,浸潰於接 合界面形成槽(緩基苯并三唾溶液,5g/L,液溫航,pH5), 於載體㊣之光澤表面上形成接合界面層。接著,一邊浸潰於 塊材銅之形成槽(硫酸銅溶液;硫酸濃度15〇g/L ,銅濃度 65g/L ’液溫45 C)中’一邊對載體箔之單面,平行配置平板 的陽極電極⑻,依電流密度2A/dm2之平滑鍛覆條件進行 電解,形成1.5μιη的塊材銅層。接著,於塊材銅層之表面, 一邊浸潰於細微銅粒形成槽(硫酸銅溶液;硫酸濃度 100g/L,銅濃度18g/L之硫酸溶液,液溫25〇c)+,一邊對 載體箱之單面,平行配置平板的陽極電極(鉛),依電流密度 ΙΟΑ/dm2之燒鍍條件進行電解7秒。接著,一邊浸潰於用於 防止細微銅粒脫落的被鍍槽(硫酸銅溶液;硫酸濃度 150g/L,銅濃度65g/L,液溫45。〇中,一邊依電流密度 ΙΟΑ/dm2之平滑錢覆條件進行電解,職〇 5μιη的細微二 化,製造總厚2·〇μιη極薄銅箔。接著,浸潰於防鱗處理槽(硫 101102461 70 201251532 酸鋅溶液;硫酸濃度70g/L,鋅濃度20g/L,液溫40。〇,依 電流密度ΙΟΑ/dm2進行電解並使用鋅進行防銹處理。於此, 作為陽極電極,係設為使用鋅板的溶解性陽極。接著,浸漬 於鉻酸處理槽(鉻酸溶液;鉻酸濃度5g/L,pH11.5,液溫55。〇) 中4秒。最終,於乾燥處理槽中使其歷時6〇秒通過藉電熱 器加熱至環境溫度ll〇°C的爐内,得到具有載體箔的銅箔。 又,於各槽之步驟間,係於可進行水洗之水洗槽中進行約 30秒的浸潰洗淨。 除了將具有載體箔之極薄銅箔改變為金屬箔4以外,其餘 與實施例1相同而得到印刷佈線板。 (比較例2) (金屬羯5之製造) 於載體箔,在35μηι厚之電解銅箔(古河電氣工業公司製, F2-WS’光澤面之表面粗度為Ra=〇 2jxm、Rz=1 2μιη)之光澤 面依序形成接合界面層及極薄銅箔層。作為製造條件,首先 將載體箔浸潰於酸洗淨槽(稀硫酸溶液,15〇g/L,液溫3〇。〇 中20秒而去除表面的油分、氧化被膜等。接著,浸潰於接 合界面形成槽(羧基苯并三唑溶液,5g/L,液溫4〇艺,pH5), 於載體箔之光澤表面形成接合界面層。接著,一邊浸潰於塊 材銅之形成槽1(焦磷酸銅溶液;焦磷酸鉀濃度32〇g/L,銅 /辰度 80g/L,25%氨水 2ml/L,pH8.5,液溫 40°C)中,一邊 對載體ίΙ之單面’平行配置平板的陽極電極⑽),依電流密 101102461 71 201251532 度1.5A/dm2之平滑鍍覆條件進行電解,接著,一邊浸潰於 塊材銅之形成槽2(硫酸銅溶液;硫酸濃度l〇〇g/L,銅濃度 200g/L,液溫45°C)中,一邊對載體箔之單面,平行酡置平 板的陽極電極(鉛),依電流密度3A/dm2之平滑鍍覆條件進 行電解,形成1.5μηι之塊材銅層。接著,於塊材銅層之表面, 一邊浸潰於細微銅粒形成槽(硫酸銅溶液;硫酸濃户 I00g/L,銅濃度18g/L之硫酸溶液’液溫25乞)中,一邊對 載體绪之單面,平行配置平板的陽極電極(鉛),依電流密度 5A/dm2之燒鍵條件進行電解。接著,一邊浸潰於用於防: 細微銅粒脫落的被鍍槽(硫酸銅溶液;硫酸濃度15〇g/L,鋼 濃度65g/L,液溫45°C)中,一邊依電流密度1〇A/dm2之平 滑鍍覆條件進行電解,形成0.5μΐη的細微粗化,製造總厚 2.0μιη極薄銅羯。接著,浸潰於防銹處理槽(硫酸鋅溶液^ 硫酸濃度70g/L,鋅濃度20g/L,液溫4〇。〇,依電流密度 15A/dm2進行電解並使麟進行_處理。於此,作為陽= 電極,係設為使用了辞板的溶解性陽極。接著,浸潰於絡酸 處理槽(鉻酸溶液;鉻酸濃度5g/L,pHii.5,液溫55χ:)* 4 秒。最終’於錢處理射使錢時的秒通祕電熱器加 熱至環境溫度11(TC的爐内,得到具有载體箱的銅箱。又, 於各槽之步關,係於可騎水洗之水㈣巾進㈣3q秒 的浸潰洗淨。 除了將具有載體箔之極薄銅箔改變為金屬箔5以外,其餘 101102461 72 201251532 與實施例1相同而得到印刷佈線板。 (評價) 使用各實施例及比較例所得之印刷佈線板,進行以下評 價。將評價項目與内容一起表示,所得結果示於表1。 (1) XRD薄膜法 使用全自動粉末X射線繞射裝置(Philips公司製’?〜1700 型)’以Cu-Κα射線作為射線源而測定。分別求得來自依2Θ 掃描所檢測出之面方位(111)、(200)、(220)及(311)的繞射線 的波峰積分強度。又,樣本係使用將製造例所得之具有載體 箔之銅箔藉真空壓製機,依2〇〇°C、1小時、壓力3MPa之 條件進行熱處理前後之薄箔表面作為試料面。又,詳細之測 定條件如下。 <測定條件> X射線源:Cu-Ka 電壓:40kV 電流:50mA 入射角:l.Odeg 繞射角度:30〜120deg 掃描速度:0.02deg/秒 (2) 銅箔之結晶粒經(長邊) 使用FIB-FESEM(日立製作所公司製’集束離子束加工觀 察裝置FB2000A,日立製作所公司製電場放射型掃描電子 101102461 73 201251532 顯微鏡S-45GG),對試料剖面進行集束離子束加卫而調製 後,依SEM像作成10000倍之視野,觀察任意3點。又, 樣本係使用對製造例所得之具有載體箱之鋼箱藉真空壓製 機依200°C、1小時、壓力3MPa之條件進行熱處理前後的 薄銅箔表面作為試料面。 (3) LS之細微加工時之薄銅箔之形狀 使用掃描型電子顯微鏡(日本電子公司製,裝置名: JSM-6060LV),㈣線之正上方及斜向觀察佈線形狀。又, 樣本係使用印刷佈線板(圖8(c))。 各符號如下述^ 〇:薄銅箔部分無殘邊 X .薄銅箱部分有殘邊 (4) AL=L1-L2 使用掃描型電子顯微鏡(日本電子公司製,裝置名: JSM-6060LV),觀察佈線之剖面形狀’算出薄銅箔之最大寬 作為u、電氣圖案鍍覆之最小寬作為,進行計算。又, 樣本係使用印刷佈線板(圖8(c))。The resin composition described above may further contain a coupling agent. The coupling agent enhances the wettability of the interface between the thermosetting resin inorganic fillers, and the resin and the inorganic filler are uniformly fixed to the substrate for improving the heat, especially after moisture absorption. The solder is heat-resistant and formulated. The coupling agent is not particularly limited, and examples thereof include an epoxy group coupling agent, a cationic Wei coupling agent, an amine-based Wei coupling agent, a titanic acid 1 (tetra) mixture, and a polyoxanol type coupling. Thereby, the wettability with the interface with the inorganic filler can be improved, whereby the heat resistance can be further improved. The above-mentioned occasional addition is not particularly limited, and is preferably G. by weight based on 100 parts by weight of the inorganic filler. G5 to 3 parts by weight, particularly preferably (U to 2 parts by weight. If the amount of 3 is less than the above lower limit value), since the inorganic filler is not sufficiently coated, the effect of improving heat resistance is lowered (4), and if the amount exceeds the upper limit The value may affect the reaction, and may have a decrease in bending strength, etc. In the resin composition used in the present embodiment, defoaming and homogenization may be added as needed; an external absorbent, a foaming agent, Additives other than the above-mentioned components, such as an antioxidant, a flame retardant, a polysulfide powder, and the like, and ion trapping (4), in the above-mentioned composition of the tree, it is easy to realize low-line expansion of the prepreg and high From the viewpoint of rigidity and high heat-generating, it is preferable to contain at least an epoxy resin, an oleic acid vinegar resin, and an inorganic filler. Among them, in the solid content of the resin composition, it is preferable to contain an oxidizing resin 5 5% by weight, cyanate resin 5 to 5 % by weight, and inorganic filler 10 to 90% by weight, more preferably 5 to 25 % by weight of epoxy resin, 10 to 25% by weight of cyanate resin and Inorganic filler material 3〇~8〇% by weight. 101102461 35 201251532 The prepreg used in the embodiment is a varnish in which a resin composition is impregnated or applied to a substrate, and as the substrate, various known materials used for a laminate for electrical insulating materials can be used. Examples of the material f include, for example, an inorganic fiber such as E glass, D glass, T surface, s glass or Q glass, organic fibers such as polyimine, polyg or tetrafluoroethylene, and the like. Mixtures, etc. These substrates have a shape such as woven fabric, non-woven fabric, roving, dicing, surface surname, etc., and the material f and shape may be selected depending on the use or performance of the target molded article, and may be used as needed. The thickness of the material of the two or more materials and the shape is not particularly limited, and is usually 0. 01~0. For those of about 5 mm, in terms of m or soup resistance and edifying, it is preferable to use a Wei coupler or the like: a surface treatment person or a mechanical fiber opening treatment, and a fan-flat field. The pre/separation is usually made by impregnating or coating the resin on the substrate in such a manner that the resin content thereof becomes 20 to 90 ^stem % after drying, and the solution is made by using the β2 dry ^1~2〇 minutes. In the hardened state (B-stage state), the film can be heated and twisted by superimposing the prepreg on a sheet of usually 1 to 2 G, and then placing an extremely thin copper foil having a carrier foil thereon. The stratified layer is used to obtain a laminate. The thickness of the prepreg layer of the plurality of sheets varies depending on the use, and is usually G. G3 ~ 2mm thick. As a lamination method, a method of laminating sheets of Tongwei can be applied, for example, multi-stage pressing, multi-stage vacuum pressing, continuous forming, high-pressure dad molding machine, etc., at a normal temperature of 1 〇〇 to □. c, pressure 0. 2~lOMPa, heating time 〇 w hours of conditions for lamination or use of a real-life lamination device, etc. depending on the lamination conditions 50~150 ° C, 0. 1 to 5 MPa, true 101102461 36 201251532 The conditions of the air pressure of 1·0 to 760 mmHg were laminated. . The layer layer used in the present embodiment is the peak intensity of the plane orientation (200) measured by the XRD film method in the above-mentioned 2〇 (surface opposite to the side of the insulating side H) 2 as described above. The ratio of the peak intensity to the plane orientation (1) (2GG) (22G) and (311) is 26% or less, preferably 25% or less, and more preferably 24%. By making the ratio of the plane orientation (thinness) within the above range, the side surname characteristic of the copper falling layer 1〇4 can be improved. In addition, the ratio of the sum of the surface orientations (2〇〇) and (22〇) of the upper surface 20 of the copper y white layer 104 is relative to the plane orientation (out), (200), (220), and (311). The sum of the peak intensities is preferably 32% or less, more preferably less, and even more preferably 30% or less. By setting the ratio of the sum of the peak intensities of the plane orientations (2〇〇) and (10)) to the above range, the side-cut characteristics of the copper-based layer 4 can be further improved. Therefore, a printed wiring board excellent in the degree of use can be obtained, so that the yield of the manufacturing method can be improved. As a method of forming a conventional steel box, a copper box having a film thickness of about 2 ton is usually formed by treatment on the electrode. However, in this formation method, there are cases where the (iv) continuation of the underlying metal layer (e.g., electrode) is orthogonal, and it is difficult to form _ having the desired crystal plane. In addition, when the film thickness of the copper box is thick, for example, 30 μm or more, the crystal grains tend to be coarsened in the thickness direction, and the ratio of the surface orientation (22 〇) of the upper surface of the copper particles tends to be high. Therefore, conventionally, by increasing the ratio of the superior orientation (220) of the surname to the face orientation (111), it is desirable to increase the longitudinal rigidity of the copper box to enhance the lower copper box relative to the upper layer. Metal 101102461 37 201251532 Layer etch rate. In contrast, in the method of forming the copper box layer 104 of the electrode shape/form, the right Tailu &  A copper layer 104 is formed on the release layer. This is because of the alignment of the lower electrode with the steel box layer 104. In other words, it is appropriate to control the alignment of one side of the copper (10) 104 which is in contact with the peeling layer to continue the layered surface of the Hi layer 1G4, so that the alignment of the surface can be made one side. Thereby, a copper layer 104 having a desired alignment property can be formed. In the present embodiment, the ratio of the surface orientation _) which is superior to the surface characteristics of the copper foil layer 104 is set to be lower than a predetermined value, so that the steel ruthenium layer in the step described later can be used. 1〇4's fiber characteristics. Thereby, a well-formed good wiring shape can be realized, and as a result, a printed wiring board excellent in yield can be obtained. Further, a method of forming the detailed copper box layer 1〇4 will be described later. Further, the film thickness of the copper box layer 1〇4 is not particularly limited, but is preferably 〇 ΐμηη or more, and is preferably 5 or less, more preferably 5 or more and _ or less, and more preferably 2 or less. By setting the thickness of the copper foil layer 1〇4 to this range, the particle diameters of the crystal grains of the copper fg layer 104 can be made uniform. Thereby, the orientation change of the copper box layer 1〇4 can be suppressed. By the above, the alignment of the upper surface of the copper foil layer 104 can be controlled, for example, the ratio (i.e., the alignment) of the 20' crystal plane from the lower 22 of the copper fg layer 104 to the upper surface can be the same; for example, the plane orientation can be 2〇〇) The ratio, or the plane orientation (2〇〇) and the plane orientation (220) are the same. Here, the same means that the tolerance in the manufacturing step is allowed, for example, the ratio of the plane orientation (2〇〇) of the lower surface 22 of the copper foil layer 104 is 101102461 38 201251532, which is the ratio of the plane orientation (200) of the upper surface 20 Within ±5%. Therefore, the ratio of the plane orientation of the lower surface 22 of the copper foil layer 104 measured by the XRD film method is the ratio of the upper surface 20 of the copper foil layer 104. Further, in the upper surface 20 of the copper foil layer 104 on which the copper foil laminate 1 is formed by heat and pressure forming, the ratio of the plane orientation (200), or the plane orientation (2 〇〇) and the plane orientation (220) The ratio is a value which maintains the copper foil layer (the peelable copper foil with a carrier foil) before heat press molding. In other words, in the upper surface 20 of the heat-press-formed copper foil layer 104, the ratio of the plane orientation (200) is 26% or less, preferably 24% or less, more preferably 23% or less; on the other hand, the plane orientation (thin) and the surface The ratio of the orientation (220) is preferably 32% or less, more preferably 31% or less, still more preferably 30% or less. The heating and press forming conditions as described herein are, for example, 2 Torr for 1 hour and a pressure of 3 MPa. The reason for maintaining the ratio is not clear, but it is presumed that the average particle diameter of the crystal grains in the copper and metallurgy layers 104 is small, and the average particle diameter has a certain degree of uniformity. Therefore, even before and after the etching step of the copper foil layer 1 4 described later, the surface orientation (200) of the upper surface of the copper foil layer 104 (that is, the contact surface with the metal layer ι 6 (for example, the electroless plating layer 11 〇)) The ratio, or the ratio of face orientation (2〇〇) and face orientation (22〇), can be the same. The copper foil layer 104 of the present embodiment preferably has crystal grains having an average length of 2 μm or less on the long sides. The shape of the crystal grains in the copper foil layer is, for example, a columnar shape or a double pyramid shape. Therefore, the maximum length of the crystal grains of the copper foil layer 1 〇 4 is taken as the long side in the cross-sectional view. The average length of the long side is 101102461 39 201251532 FIB-SIM (Focused Ion Beam Scanning Ion Microscope) or FIB-SEM (Focused Ion Beam Scanning Electron Microscope), which is between 10,000 and 12,000 times. The cross-sectional image of the cross-section μιη was averaged, and the average value of the total of three visual field images was calculated. Thereby, the character of the bronze floor 104 is improved. In the copper foil layer 1〇4 of the present embodiment, the area ratio of the crystal grains having an average length of 2 μm or less in the long side is preferably 8% or more, more preferably 85% or more. Even better 90°/. the above. This area ratio is subjected to image processing on the field of view of the same cross-sectional image as described above, and the average value of the total of three fields of view is calculated. Thereby, the etching characteristics of the copper foil layer 1〇4 are improved. Further, the ultra-thin copper foil (copper foil layer 104) having a carrier foil used in the present embodiment is an electrode layer in which a roughened surface of an ultra-thin copper foil is convex-shaped (referred to as a baking layer). For example, the roughening surface treatment by the formation or oxidation treatment, reduction treatment, etching, or the like of Japanese Patent Laid-Open No. Hei 9-195-96. Therefore, the surface roughness of the roughened surface of the ultra-thin copper foil used in the present embodiment is preferably the upper limit of the 10-point average roughness (Rz) shown in JIS B0601, preferably 5 or less. 2. 0 μιη or less; on the other hand, the lower limit is not particularly limited, and is preferably Ο. Ίμιη above. Furthermore, the arithmetic mean roughness (Ra) is preferably less than the claw, more preferably 0. 5μιη below. Further, the 'four-layer steel 104 has a block portion and a convex portion formed on one side of the block portion by performing the formation of a bump-shaped electrode layer or roughening surface treatment (hereinafter also referred to as a convex portion). To roughen the foot part). 101102461 201251532 In addition, in the present embodiment, the copper foil layer 104 may be a copper foil composed of steel (except for the incorporation of inevitably in the production step), and may be an additive metal component containing nickel or aluminum. In this case, the content of copper is not particularly limited, and is preferably 90% by weight or more, more preferably % by weight or more, and still more preferably 99% by weight based on the total weight of the total metal components constituting the copper foil layer 104. Further, as the metal component to be added, it may be used alone or in combination with a plurality of types of materials, or a copper foil layer 1〇4 may be used instead, and a metal foil such as a nickel foil or an aluminum foil may be used. Before and after the heat treatment, the difference in Vickers hardness of the copper foil layer 1〇4 is preferably 〇Hv or more and 5ΌΗν or less, more preferably 0Hv or more and 30Hv or less. By the difference in Vickers hardness of the copper foil layer 1〇4 When it is set to the upper limit or less, it is possible to suppress the progress of recrystallization of the copper foil layer 1 to 4 due to heating, and the crystal grain size is increased, and the etching rate is slow, or the strain accumulation of the thin circuit after etching can be suppressed. The copper layer 104 is at 230. The Vickers hardness after heat treatment for 1 hour is preferably 180 Hv or more and 240 Hv or less, more preferably 185 Hv or more and 235 Hv or less. By setting the Vickers hardness after heating to 18 〇Hv or more, heating can be suppressed. When the recrystallization of the thin copper layer (copper foil layer 1〇4) progresses and the crystal grain size becomes large, the linearity of the circuit after etching can be suppressed. On the other hand, 'by setting the Vickers hardness after heating When it is 24 〇Hv or less, it is possible to suppress the case where the thin copper layer becomes too hard and becomes brittle. Thereby, it is possible to suppress cracking during operation and to improve the thermal shock resistance of the formed fine wiring. 101102461 41 201251532. In the form, the Vickers hardness can be measured by the following method. That is, the Vickers hardness is measured in accordance with JIS Z 2244 in the following order using a micro hardness tester (model MVK-2H) manufactured by Akashi Co., Ltd. at 23 °C. 1) The ultra-thin copper foil having the support formed into the thin copper layer was placed in an oven (nitrogen atmosphere) heated to 230 ° C for 1 hour, and then cut into 10 x 10 mm square. (2) The cutting sample was loaded according to the load speed. 3μιη / sec, test negative The indentation was applied under the conditions of a weight of 5 gf and a holding time of 15 seconds, and the Vickers hardness was calculated from the measurement result of the indentation. (3) The average value of the arbitrary five-point Vickers hardness was measured as the Vickers hardness value of the present embodiment. The etching rate of the copper foil layer 104 (thin copper foil) is 〇. 68μιη/ηΰη and above 25μιη/ιτύη Following 'better 〇·68μηι/ιηίη above and 1. 24μιη/ηήη below, and even better. 69μιη/ιηίη and above 1. Below 23pm/min. The etching rate of the copper germanium layer 104 of the present embodiment is only indicated by the etching rate of the bulk portion and the etching rate of the copper foil layer 1〇4, which is specifically determined by the following etching conditions. 95% sulfuric acid, i〇〇〇cc pure water and 20cc 34. 5% hydrogen peroxide water, and a temperature of 3 (TC ± rc of sulfuric acid / hydrogen peroxide water, impregnating the laminate. In the present embodiment, 'by etching the copper foil layer 104 to the lower limit value In the above, the etching residue of the copper foil layer 1〇4 can be reduced, and the wiring shape is good, and the etching rate of the copper foil is set to be lower than the upper limit value, so that 101102461 42 201251532 can be suppressed from forming a cut σ in the copper/self layer 104 (four). The entanglement between the wiring and the insulating layer also suppresses the occurrence of abnormal necking in the copper portion and the bulk portion of the layer 104 when the button is inscribed to the roughened portion of the copper box layer 104. In the fourth embodiment, the (4) (4) fan rate can be measured by the following method: 1. The carrier case (carrier (4) 1〇6) is removed, and a substrate with a very thin copper flute is laminated on both sides ((4) laminated plate _, cut into The sample piece is obtained by 4Qmmx8Gmm and the sample piece is measured by the vernier caliper and read to 2 points below the decimal point, and the area of the sample piece is different.  On a horizontal drying line, the sample piece was subjected to a machine and dried for 1 minute. 3.  The initial weight WG of the sample piece (including the substrate weight) was measured. 4.  Prepare an etchant. 4-1 . Weighing 95% sulfuric acid (manufactured by Wako Pure Chemical Industries Co., Ltd., special grade) 6〇g, placed in a beaker. 4-1 : Put pure water into a beaker and make a total of 1 〇〇〇 cc. 4-3: Stir by a magnetic stirrer for 3 minutes at 3 〇 ±lt. 4-4 . Weighing 34. 5% hydrogen peroxide water (manufactured by Kanto Chemical Co., Ltd., Deer Grade) 20cc was placed in a beaker. 5. Dip in the above etching solution (liquid temperature 3 〇 ± n, stirring conditions: magnetic stirrer, 250 rpm) 〇 6. The weight W1 (including the weight of the substrate) after the treatment was measured every 30 seconds until the bulk layer of the extremely thin foil was completely etched. 101102461 43 201251532 7. Calculate the side weight (WO — W i) / (the area of the two sides of the impregnation = m2), draw the time (seconds) according to the axis, and the etching quality (g/m2) of the Y axis, in the second of 〇~丨The slope κ is calculated according to the least squares method. The conversion formula of the silver engraving rate of the present embodiment is shown below. The etch rate (pm/min) = K(g/sec · m2) + 8. 92 (copper specific gravity g/cm3) x 60 (sec/min) In the present embodiment, the grain size of the steel foil layer 1〇4 is reduced, the change in Vickers hardness after heat is reduced, and the roughened foot portion is improved. The etch rate increases the etch rate of the copper foil layer 104 (especially the bulk portion). Further, the etching speed of the crucible portion is generally slower than that of the portion of the material, but can be improved, for example, by reducing the electrolytic density. The stomach describes the detailed method of the peelable copper used in the copper layer 104. Further, the method for producing the copper foil used in the present embodiment is not particularly limited. For example, when a peelable copper foil having a carrier is produced, a metal which is a release layer is formed on a carrier foil having a thickness of 10 to 50 μm. The inorganic compound or organic compound layer is subjected to a plating treatment on the release layer to form a copper foil. As a condition for the plating treatment, for example, when a sulfuric acid steel bath is used, it may be 50 to 100 g/L of sulfuric acid, 30 to 100 g/L of copper, and 2 to 8 Torr of temperature. 〇, current density 0. 5~100A/dm conditions' When using a coke-breaking steel bath, it can be set to axe, potassium citrate 100~700g/L, copper 10~50g/L, temperature 303⁄4~60°C, pH8~12, The current density is 1 to ΙΟΑ/dm2. Further, various additives may be added to the above bath in consideration of the physical properties of the steel box or the slidability of 101102461 44 201251532'. x, the so-called detachable metal Μ ' is a metal enamel having a body, and the carrier is a peelable metal. In this embodiment, the steel pig is formed on the peeling layer by, for example, having an average molecular weight of white 15 to 35 ppm of gelatin of 5 Å or less is used as an additive to carry out cathodic electrolysis treatment with copper sulphate. In this case, the bismuth of steel (10) is formed by using the sulphate formed as a cathode and using the above copper sulphate. The ferry is subjected to electrolytic treatment, and the separation is carried out on the separation layer. If the method of forming the copper fl is used, the mechanical strength of (four degrees) can be increased or decreased at a high temperature, and a copper foil excellent in etching property and excellent in workability can be formed. This effect is caused by the fineness of the crystal constituting the copper by the addition of gelatin. When the average molecular weight of the gelatin is ≤ or less, recrystallization of the thin copper layer by heating can be suppressed. Thereby, the crystallization of the crystal after heating is performed. Regarding the fact that it has not been fully explained, it can be considered that by setting the molecular weight of Mingsheng to below the fixed value, gelatin is easily taken into the crystal grain boundary during plating, and as a result, the progress of recrystallization can be suppressed. . The average molecular weight of the daily turnover is preferably ° 5 〇〇 5 5''. By setting the average molecular weight of the daily turnover to 500 or more, it is possible to prevent the gelatin added to the sulfuric acid steel money bath from being decomposed into an organic compound by the amino acid or the like in the acidic solution. Thereby, the effect of preventing the recrystallization from being lowered into the crystal grain boundary can be suppressed. The gelatin concentration in the copper sulfate plating bath is preferably 15 to 35 qing. When the gelatin concentration is 15 ppm or more, recrystallization inhibition due to heating can be sufficiently obtained. 101102461 45 201251532 Effect. Therefore, a fine crystalline state can be maintained after heating. When the gelatin concentration is 35 ppm or less, the internal stress of the copper network formed by the borrowing and coating can be suppressed. Thereby, it is possible to suppress the curl of the ultra-thin copper foil having the carrier foil and the occurrence of defects during transportation. As the copper sulfate ore bath, it is suitable to use, for example, a sulfuric acid acidic copper sulfate plating bath containing copper sulfate 5 hydrate, sulfuric acid, gelatin and gas. The concentration of the copper sulfate hydrate in the copper sulfate plating bath is preferably 5 〇g/L to 3 〇〇g/L, more preferably 100 g/L to 200 g/L. The sulfuric acid concentration is preferably 4 〇 to i6 〇 g/L, more preferably 80 g/L to 120 g/L. The concentration of gelatin is as described above. The concentration of chlorine is preferably from 1 to 20 ppm, more preferably from 3 to 10 ppm. The solvent of the plating bath is usually water. The temperature of the plating bath is preferably from 20 to 60 ° C, more preferably from 30 to 50 ° C. The current density at the time of electrolytic treatment is preferably 1 to 15 A/dm 2 and more preferably 2 to i 〇 A/dm 2 . In the case of forming a copper box, in order to prevent the occurrence of pinholes before the electrolytic treatment using the copper sulfate plating bath described above, a strike plating using a so-called distribution bath is preferably used. Examples of the key bath used for the underplating include a copper pyrophosphate plating bath, a copper citrate plating bath, and a copper citrate plating bath. The copper pyrophosphate plating bath ' is preferably, for example, a plated copper containing copper pyrophosphate and potassium pyrophosphate. The concentration of copper pyrophosphate in the copper pyrophosphate plating bath is preferably from 60 g/L to 110 g/L, more preferably from 70 g/L to 90 g/L. The concentration of potassium pyrophosphate is preferably from 240 g/L to 470 g/L, more preferably from 300 g/L to 4 〇〇g/L. The solvent for the plating bath is usually water. The pH of the plating bath is preferably 8. 0~9. 0, better 8. 2~8. 8. In order to adjust the pH value, ammonia water or the like may be added (the same applies hereinafter). The temperature of the plating bath is preferably 101102461 46 201251532 20 to 60 ° C, more preferably 30 to 50 ° C. The current density during electrolytic treatment is preferably 0. 5~ΙΟΑ/dm2, preferably 1~7A/dm2. The electrolytic treatment time is preferably 5 to 4 seconds, more preferably 10 to 30 seconds. The copper citrate ore bath is preferably a plating bath containing, for example, copper sulfate 5 hydrate and citrate 3 sodium dihydrate. The concentration of the copper sulfate 5 hydrate in the sulphuric acid steel plating bath is preferably from 10 g/L to 50 g/L, more preferably from 2 g/L to 40 g/L. The concentration of the sodium citrate dihydrate 2 hydrate is preferably 2 〇 g / L ~ 60 g / L, more preferably 30 g / L ~ 50 g / L. The solvent of the plating bath is usually water. The pH of the plating bath is preferably 5. 5~7. 5, better 6. 0~7. 0. The temperature of the plating bath is preferably 2 〇 6 (rc, more preferably 30 to 50 ° C. The current density during the electrolytic treatment is preferably 〇 5 to 8 A / dm 2 , more preferably 1 to 4 A / dm 2 . Preferably, it is 5 to 40 seconds, more preferably 1 to 3 seconds. As the copper citrate, it is preferably, for example, containing copper sulfate 5 hydrate, sulfuric acid recorded 6 hydrate and citric acid 3 sodium 2 hydrate. The plating bath. The concentration of copper sulfate 5 hydrate in the copper citrate recording bath is preferably i 〇 g / L 〜 5 〇 g / L, more preferably 20 g / L ~ 40 g / L. Nickel sulfate 6 hydrate The concentration is preferably lg / L ~ 1 〇 g / L, more preferably 3g / L ~ 8g / L. The concentration of sodium citrate dihydrate is preferably 2 〇 g / L ~ 60g / L, more preferably 30g / L~50g/L. The solvent of the plating bath is usually water. The pH of the plating bath is preferably 5. 5~7·5, better 6. 0~7·〇. The temperature of the plating bath is preferably 2 〇 to 6 (rc, more preferably 30 to 5 (rc. The current density during electrolytic treatment is preferably 0. 5~8A/dm2, better i^A/dm2. The electrolytic treatment time is preferably 5 to 4 seconds, more preferably 10 to 30 seconds. The inorganic compound or the organic compound layer of the above-mentioned release layer-based metal material, if 101102461 47 201251532 is heat-treated even if it is subjected to heat treatment between 100 and 300 ° C when laminated, a known product "as a metal oxide can be used. For example, a mixture of zinc, chromium, nickel, copper, molybdenum, an alloy system, a metal and a metal compound or the like is used. As the organic compound, one or more selected from the group consisting of a nitrogen-containing organic compound, a sulfur-containing organic compound, and a carboxylic acid are preferably used. The above nitrogen-containing organic compound is preferably a nitrogen-containing organic compound having a substituent. Specifically, it is preferred to use a 1,2,3-benzane (hereinafter referred to as "BTA") which has a substituent and a triazole compound, and a stagnation and a triple sigma (hereinafter referred to as "CBTA"). ), Ν', Ν'-bis(benzotriazolylhydrazino)urea (hereinafter referred to as "BTD-U"), 1Η-1,2,4-triazole (hereinafter referred to as "ΤΑ") and 3 _Amino-1Η-1,2,4-triazole (hereinafter referred to as "ΑΤΑ") and the like. As the sulfur-containing organic compound, cetylbenzothiazole (hereinafter referred to as "ΜΒΤ"), sulfur-based cyanuric acid (hereinafter referred to as "tca"), and 2-benzimidazolethiol (hereinafter referred to as "sulfonated organic compound") are preferably used. "BIT") and so on. As the acid repellent, it is particularly preferable to use a monoacid, and among them, oleic acid, linoleic acid, and linoleic acid are preferably used. As described above, by appropriately controlling the electrolytic density, reducing the film thickness, and the like, the desired alignment property can be achieved on the copper ruthenium layer 1G4 of the present embodiment. Further, at least the lower surface 22 (the surface in contact with the surface of the insulating layer H) 2 of the steel sheet layer 1〇4 used in the present embodiment is made practical for the adhesion between the steel material and the insulating layer 102. Above the level, surface treatment can also be carried out. 101102461 48 201251532 The rough processing of the metal foil used for the copper foil layer 104 may be, for example, any one of a money-proof sound, a chromic acid treatment, a decane coupling treatment, or a combination thereof. n J - Any one of the surface treatment means is appropriately selected in conjunction with the tree sap material constituting the insulating layer 102. The rust-preventing treatment can form a film on the metal foil by sputtering, electroplating, or electroless plating, for example, by using any one of nickel, tin, rhodium, chrome, bismuth, and the like. Throughout. From the perspective of cost, it is preferably electricity. In order to facilitate the precipitation of metal ions, a necessary amount of a distating agent such as citrate, tartar, under-salt or %-amino acid may be added. The plating solution is usually used in an acidic region, and the temperature is set at a temperature of, for example, 25 c) to 803⁄4, and the current density is 0. 1 ~ ΙΟΑ / dm, power-on time 丨 ~ 6 〇 seconds, preferably 丨 ~ such as the range of seconds is appropriate. The amount of the rust-preventing metal varies depending on the kind of the metal, and is preferably 1 〇 to 2 〇〇 - in total. If the anti-scaling treatment is too thick, it will cause a hindrance of the surname and a decrease in the electric resistance. (6) If the thickness is too thin, the peel strength between the resin and the resin is lowered. In addition, when the resin composition constituting the insulating layer 1G2 contains a cyanic acid vinegar resin, the ruthenium is protected from hearing by a metal containing nickel. In the case of this combination, it is less useful to reduce the peel strength in the deterioration resistance test or the deterioration resistance test. 、 As the chromic acid treatment, an aqueous solution containing hexavalent chromium ions is preferably used. The chromic acid treatment can be used for the early pure impregnation treatment, but it is preferably treated by the cathode into the π ^ good system by the heavy acid sodium. 1~50g/L, pH1~13, bath temperature 〇~60〇c, 101102461 49 201251532 Current density 0. 1~5A/dm2, electrolysis time can replace the secret rhyme, (4) secret 13⁄4 face X seconds piece. It is also preferable to use the above-mentioned rust-preventing treatment for the above-mentioned chromic acid. Thereby, the composition layer (insulating layer 102) and the metal j can be used to lift the insulating resin. The dense adhesion between S 'Shaw layer 1G4) is used as the 3-glycidoxypropyltrimethoxy Wei, 2, (3: ring using, for example, ethylene trimethoxy group (10) ring used in the above decane coupling treatment. Oxygen functional money, 3: amine core: = burned, called aminoethyl) 3_aminopropyl trimethoxy alcohol, called silk ethyl) 3-aminopropyl methyl dimethoxy money Ethyl functionalities (IV), 3_ propylene oxide, etc., such as amino-functional functional money t-dilute tridecyloxy Wei, Ethyl-based tri-f-oxygen, ethyl hexamethylenedioxyethoxy) a propylidene functional group, a propyl group, a propyl group, a methoxy group, a propyl group, a methoxy group Mercapto functional decane and the like. These may be used singly or in combination of plural kinds. These coupling agents can be dissolved in a solvent such as water at a concentration of 1 to 15 g/L, and the resulting solution is coated or electroformed on a metal foil at a temperature of from room temperature to 50 ° C to form a decane. The coupling agent is attracted to the metal foil. These oxime coupling agents form a film on the metal foil by condensation bonding with the hydroxyl group of the rust-preventing metal of the metal falling surface. After the decane coupling treatment, the bonding is stabilized by heating, % external irradiation, or the like. In the heat treatment, it is preferably dried at a temperature of, for example, 100 to 2 ° C for 2 to 60 seconds. Ultraviolet rays 101102461 50 201251532 Irradiation is preferably carried out, for example, in the range of wavelengths of 200 to 400 nm and 2 to 25 μm/cm 2 . Further, the decane coupling treatment is preferably carried out on the outermost layer of the metal foil. When the cyanate resin is contained in the insulating resin composition constituting the insulating layer 102, it is preferably treated with an amine-based decane-based coupling agent. This combination is useful for reducing the peel strength in the heat deterioration resistance test or the moisture resistance deterioration test. Further, the decane coupling agent used in the decane coupling treatment is preferably a chemical reaction with an insulating resin composition constituting the insulating layer 1〇2 by heating at 60 to 200 C, more preferably 80 to 150 °C. Thereby, the functional group in the above insulating resin composition is chemically reacted with the functional group of the shihua coupling agent to obtain superior adhesion. For example, for the epoxy resin-containing insulating resin composition, a decane coupling agent containing an amino functional decane is preferably used. The reason is that the epoxy group and the amine group easily form a strong chemical bond by heat, and the bond is extremely stable to heat or moisture. As such, as a chemical bond. The combination may, for example, be an epoxy group-amino group, an epoxy group, an epoxy group, an epoxy group, a sulfhydryl group, a J ethoxy group, an epoxy group, an epoxy group, an epoxy group, an epoxy group, an amino group, an amino group, a hydroxyl group, Amino-carboxyl, amino-cyano and the like. Further, the insulating resin of the insulating resin composition used in the present embodiment is preferably used in an epoxy resin which is liquid at normal temperature. In this case, since the viscosity at the time of refining is largely lowered, the wettability of the bonding interface is obtained. The chemical reaction between the epoxy resin and the decane coupling agent is likely to occur, and as a result, a strong peel strength can be obtained. Specifically, it is preferably a bisphenol A type ring having an epoxy equivalent of about 2 101 101102461 51 201251532 an oxygen resin, a bisphenol F type epoxy resin, or a phenol novolak type epoxy resin. Further, when the insulating resin composition contains a curing agent, it is particularly preferred to use a thermosetting latent curing agent as the curing agent. That is, in the case where the functional group in the insulating resin composition is chemically reacted with the functional group of the decane coupling agent, it is preferred that the reaction temperature of the functional group in the insulating resin composition and the functional group of the decane coupling agent is lower than The hardening agent is selected as a method of setting the temperature at which the hardening reaction of the insulating resin composition starts. Thereby, the reaction of the functional group in the insulating resin composition with the functional group of the decane coupling agent is preferentially and selectively performed, and the metal foil (copper v white layer 104) and the insulating resin composition layer (insulating layer 1 〇 2) The adhesion is high. The thermosetting latent curing agent for the insulating resin composition containing an epoxy resin may, for example, be a solid dispersion such as dicyandiamide, a diterpene compound, an imidazole compound or an amine/epoxy adduct. A reactive block type hardener such as a dissolved hardener, a urea compound, a rust salt, a boron trichloride/amine salt, or a block carboxylic acid compound is heated. The prepreg containing the above-mentioned insulating resin composition is laminated with the roughened surface by fine and uniform rough treatment, and the surface-treated ultra-thin copper foil having the carrier foil is subjected to the above method. When integrated, a copper foil laminate having a carrier foil as shown in Fig. 7(a) is formed, and as shown in Fig. 7(b), by removing the carrier foil layer 106, The copper-free laminate 1 〇〇 on both sides of the insulating layer 1 〇 2 has a steel and smelting layer 104. Moreover, it is not limited to this state. As such, the copper foil layer 104 may be formed on at least one side of the insulating layer 102 or may be formed on the entire surface or a portion of the insulating layer 102. 101102461 52 201251532 Next, as shown in Fig. 7(c), a through hole 1〇8 for interlayer connection from the upper side of the copper foil to the lower surface is formed on the copper foil laminate 1(). In the method of forming the through-holes 108, various known means can be used. For example, when the through-holes 1〇8 having a pore diameter of ΙΟΟμηι or more are formed, from the viewpoint of productivity, it is suitable to use a method such as a drill to form one turn. In the case of the following through holes 1 to 8, a gas laser such as a carbon dioxide gas or an excimer or a solid laser such as YAG is preferably used. Then, the catalyst core can be provided on at least the copper foil layer 1〇4. However, in the present embodiment, the catalyst core is provided on the entire surface of the copper box layer 104 and on the inner wall surface of the through hole 1〇8. The catalyst core is not particularly limited, and for example, f metal ions or gels can be used. Next, the electroless plating layer is formed by using the catalyst core as a core. However, before the electroless ore coating treatment, the surface of the copper _1〇4 or the through hole (10) may be subjected to, for example, a shirt by inspection. Wait. As a decontamination treatment, it is particularly limited, and it is possible to remove (4) a wet method using an oxidizing agent solution having an organic decomposition phase and an active species ((4), a free-shirt having a strong oxidation effect on the object to be removed). (10) A well-known method such as a dry method such as a money method. (4) The cutting of H (4), for example, after the swelling treatment by the surface of the fat, the method of performing the neutralization treatment by the alkali treatment, followed by the neutralization treatment. Next, as shown in Fig. 7(d), a thin layer of the electrolytic plating layer m is formed by the electroless ruthenium treatment on the copper (4) to the catalyst core and the through holes (10) and (4). The electroless (four) layer (10) is electrically connected to the copper layer 10 on the upper surface of the insulating layer 101102461 53 201251532. In the case of electroless plating, for example, copper sulfate, formaldehyde, a neutralizing agent, sodium hydroxide or the like can be used. Further, after the electroless plating, it is preferred to carry out heat treatment of 1 〇〇 to 25 〇 t > c to stabilize the film. From the viewpoint of forming a film capable of suppressing oxidation, it is particularly preferably 120 to 18 (heat treatment of rc. Further, the average thickness of the electroless plated layer 110 may be a thickness which can be plated as described below, for example, 0. 1~ is enough. Further, the inside of the through hole 108 may be filled with a conductive paste or an insulating paste, or may be filled by plating with an electric pattern. Next, as shown in Fig. 7(e), a plating resist 112 having a predetermined opening pattern is formed on the electroless plating layer 110 provided on the copper foil layer 1A4. This opening pattern corresponds to a conductive circuit pattern to be described later. Therefore, the plating resist 112 is provided to cover the non-circuit forming region on the copper layer 104. In other words, the anti-recording layer 112 is not formed on the through hole 1〇8 and the conductor circuit forming region on the copper foil layer 104. The plating resist 112 is not particularly limited, and a known material can be used, but a liquid or dry film can be used. In the case of forming the fine wiring, it is preferable to use a photosensitive dry film or the like as the anti-mine layer 112. When the plating resist ι is formed, for example, a photosensitive dry film is laminated on the electroless plating layer 11 to expose the non-circuit forming region to light-harden, and the tree light portion is dissolved and removed by the (four) liquid. Further, the remaining hardened squeaky dry film will become the bell layer 112. The thickness of the plating resist 112 is preferably set to a film thickness equal to or thicker than the thickness of the conductor (mineral layer 114) to be coated thereafter. Next, as shown in Fig. 8(a), at least the inside of the opening pattern 101102461 54 201251532 of the resist layer 112 and the electroless plating layer 110 are formed, and the plating layer 114 is formed by a plating process. At this time, the copper foil layer 104 functions as a power supply layer. In the present embodiment, the plating layer 114 may be continuously provided on the upper surface of the insulating layer 102, the inner wall of the through hole 1〇8, and the lower surface thereof. The plating method is not particularly limited, and a known method used for a general printed wiring board can be used. For example, a method of immersing in a plating solution such as copper sulfate or the like, and a method of flowing a current or the like to the plating solution can be used. . The thickness of the plating layer 114 is not particularly limited, and may be used as a circuit conductor. For example, the range of 1 to ΙΟΟμηη, preferably 5 to 5 〇μηι is preferable. The plating layer 1M may be a single layer or have a multilayer structure. The material of the plating layer U4 is not particularly limited, and for example, copper, a copper alloy, a 42 alloy, nickel, iron, chromium, tungsten, gold, solder, or the like can be used. Next, as shown in Fig. 8 (b), the plating resist 112 is removed using an alkaline stripper or sulfuric acid or a commercially available plating stripper or the like. Next, as shown in Fig. 8(c), the electroless plating layer no and the copper foil layer 104 other than the region in which the plating layer U4 is formed are removed. The method of removing the copper foil layer 1〇4 is, for example, soft etching (rapid etching) or the like. Thereby, a pattern of the conductive circuit 118 formed by laminating the copper tank layer 104 and the metal layer 116 (electroless plating layer u 〇 and plating layer ΐ 4) can be formed. The cross-sectional shape of the conductive circuit U8 of the printed wiring board 2 according to the second embodiment is not limited to a rectangular shape as shown in FIG. 9 but also has an inverted tapered shape as shown in FIG. 9 (4) and a mesh 9 (8). Any of the illustrated fish plate (semi-idle) shape or the necked shape shown in Fig. 9(c).乂101102461 55 201251532 于========================================================================================================== The difference is made and the circuit forms a tendency to (4). Therefore, the liquid is preferably used in the type of copper and in accordance with the reaction control, not the humulus and temple diffusion control type. If the anti-y reaction control of steel and (iv) liquid is controlled, then even if the diffusion is enhanced above it, the _speed is still not. Even if the etching rate between the preferred portion and the poor portion where the liquid exchange does not occur is taken as the _reaction (four) etchant, for example, hydrogen peroxide and no teeth are included: by =. Since hydrogen peroxide is used as the oxidant, the degree can be strictly controlled. In addition, if (4) * t into _ 70, then the solution reaction becomes easy to become diffusion control. As the non-reading/reading, it is possible to use succinic acid, sulfuric acid, organic acid, etc., and sulfuric acid is cheap and the parent is better in terms of the stability of the sulfuric acid and chlorine peroxide as the main component and the stability of the liquid. The respective concentrations are 5 to 2,500 g/bu, such as persulfate, sodium persulfate, sodium persulfate, and the like. Thus, by appropriately selecting the cooking characteristics or the (4) conditions of the steel, the conductive circuit 118 of the desired shape can be paid. According to the above, two (four) of the money edge layer (10) can be obtained as the printed wiring board 2 of the conductive circuit m. Further, in the manufacturing method of the printed wiring board of the second embodiment, the same operational effects as those of the first embodiment can be obtained. Further, as shown in Fig. 8 (CM), the solder resist layer 12 may be formed so as to cover one portion of the insulating layer 102 and a portion of the conductive circuit 118. As the solder resist layer 101102461 56 201251532 120, for example, a heat-resistant resin composition such as a photosensitive resin, a thermosetting resin, or a thermoplastic resin which can contain a filler or a substrate having excellent insulating properties can be used. Next, the first plating layer 112 and the second plating layer 124 are further formed on the conductive circuit 118 having the opening portion of the solder resist layer 12A. Thereby, the metal layer 116 is formed into a multilayer structure of two or more layers. As the first plating layer 112 and the second plating layer 124, the gold plating layer is used for the first plating layer 112 and the second plating layer 124. The method of gold plating may be a conventional method without particular limitation. For example, on the plating layer I14, 0. 1~ΙΟμιη around electroless plating 'for substitution gold plating 0. 01~0. After about 5 μm, a method of electroless gold plating of about 0.1 to 2 μm is performed. According to the above, the printed wiring board 202 shown in Fig. 8 (d-1) can be obtained. Further, as shown in Fig. 8 (d-2), the solder resist layer 120 may not be formed, and the first plating layer 122 and the second plating layer 124 may be formed around the conductive circuit 118. As the first plating layer 122 and the second clock layer 124, for example, a laminated body of a nickel plating layer and a gold plating layer can be used. By the above, the printed wiring board 204 of Fig. 8 (d-2) can be obtained. Further, a semiconductor wafer (not shown) is mounted on the printed wiring boards 200, 202, and 204 to obtain a semiconductor device. (Third Embodiment) Next, a method of manufacturing a printed wiring board according to a third embodiment will be described. Figs. 10 to 12 are cross-sectional views showing the steps of manufacturing steps of the method of manufacturing the printed wiring board according to the third embodiment. In the method of manufacturing a printed wiring board according to the third embodiment, for example, the printed wiring boards 101102461 57 201251532 200, 202, and 2〇4 obtained in the second embodiment are used as the inner layer circuit board, and the built-in layer is further formed on the inner layer circuit board. By. First, the printed wiring board 2 〇 所得 obtained in Fig. 8(c) is used as the inner layer circuit board. The inner layer circuit (conductive circuit 118) of the printed wiring board 200 is subjected to roughening processing. Here, the roughening treatment means that the surface of the conductor circuit is subjected to a chemical treatment, a plasma treatment, or the like. As the roughening treatment, for example, a blackening treatment by oxidation reduction or a chemical liquid treatment 4 using a known sulfuric acid-hydrogen peroxide-based roughening liquid can be used. Thereby, the adhesion between the interlayer insulating material constituting the insulating layer 130 and the conductive circuit 118 of the printed wiring board 200 can be improved. Further, the inner layer circuit board may be replaced by the printed wiring board 2A obtained in the second embodiment, and is not particularly limited, and a pre-reformed or substrate may be laminated by a plated through hole method or an additive method. A general multilayer printed wiring board such as a resin composition layer. The conductor circuit layer that becomes the inner layer circuit can be formed by a conventional circuit formation method. Further, in the multilayer printed wiring board, it is possible to form a laminated body (a laminated body obtained by laminating a plurality of prepregs) and a metal foil laminated board 'by drilling, laser processing, or the like. The through holes are then electrically connected to the inner layers of the two sides by plating or the like. Next, as shown in Fig. 1 (4), an insulating layer ι 3 (prepreg) and a copper foil layer having a carrier foil layer 107 are disposed on both sides of the printed wiring board 200 on which the surface of the conductor circuit is roughened. 1〇5 (very thin copper foil with carrier foil). Then, as shown in Fig. 10 (b), a multilayer laminated plate is formed by subjecting the laminated body which overlaps these layers to heat and pressure treatment. Next, as shown in FIG. 10(c), the 101,052,461, 2012, 2012,523,320 carrier foil layer 107 is peeled off. Next, as shown in Fig. 10 (d), a part of the insulating layer 13 and the copper foil layer 1 〇 5 is removed to form a hole 109 on the bottom surface of the hole 109 to expose a part of the surface of the conductive circuit 118. The method of forming the hole 109 is not particularly limited. For example, a solid laser that uses a gas laser such as carbonic acid gas or a stimulator or a solid magnetic laser such as a crucible can be used. Further, the hole 109 is shown as a non-through hole in Fig. 1Q, but may be a through hole. Moreover, in the case of a cross-track, even a laser ride is formed. q 踬 加工 Next, as explained in the ®11(8), a thin layer of I thunder plating is formed on the upper guide, on the inner wall of the hole 109, and on the copper foil shore ag 105. The electroless plating layer ηι is formed by electrolysis. Before the electroless plating, if the coating is applied to the coating, the same can be applied to the decontamination of the chemical solution. Moreover, the thickness of the electroless_coating layer (10) may be as follows: (the thickness of the U~_ is sufficient. =, the lower hole may be made), and the conductive paste or the insulating paste 109 may be filled inside (blind-pass plating) Filling. The error-free electrical pattern is then, as shown in Fig. 11 (8), in the case of electrolessness, when the conductor circuit pattern has an open D-dip θ, the formation phase is formed by the formation of the anti-plating layer 113' Layer 113. In other words, 113' can be used in the same manner as the above-mentioned anti-clock layer 112. 'The thickness of the anti-plating layer is preferably not the thickness of the conductor 丨13 with the post-mineral coating. The thickness of the material is (four) degrees or more. The film thickness of 201251532. Next, as shown in Fig. 11(c), a plating layer 132 is formed inside the opening pattern of the wrought layer 113. The plating layer 132 may be formed on the conductive circuit 118 inside the hole 〇9' Alternatively, it may be formed on the electroless gold-clad layer 111 inside the opening pattern. The electric money for forming the plating layer 132 may be the same as that of the above-mentioned mineral coating layer 114. The thickness of the plating layer I 132 may be used as a circuit. The conductor may be, for example, a range of 1 to ΙΟΟμηη, more preferably a range of 5 to 5 μm. Then, as shown in FIG. 12(a), the plating resist 113 is peeled off in the same manner as the plating resist U2. Next, as shown in FIG. 12(b), copper is used in the same manner as the above-described copper foil layer 104. The foil layer 1〇5 and the electroless plating layer ηι are removed by soft etching (rapid etching), whereby the conductive layer composed of the copper foil layer 1〇5, the electroless plating layer 111, and the bell layer 132 can be formed. Further, on the conductive circuit 118, a through hole and a pad electrically connected to the conductive circuit 118 can be formed by the plating layer 132. By the above, the printed wiring board 2〇1 is obtained. Still as shown in Fig. 12(cl) As shown, a solder resist layer 121 may be formed on the insulating layer 13 、, the plating layer 132 of the conductive circuit pattern, and a portion of the plating layer 132 of the pad. As the solder resist layer 121, the solder resist layer described above may be used. The layer 12 is the same. Then, on the plating layer 132 having the opening portion of the solder resist layer 121, the first plating layer 123 and the second plating layer made of, for example, a mineral nickel layer and a gold plating layer can be further formed. The layer 125 is obtained by the above, and the printed wiring board 203 shown in Fig. 12 (〇1) is obtained. Further, as shown in Fig. 12 (c-2), it may be invisible. The solder resist layer 121 is formed around the electric circuit pattern of the guide 101102461 60 201251532 and around the crucible, and forms the first and second cladding layers 123 and 125. The above is shown in Fig. 12(c_2). In the third embodiment, the same effects as in the second embodiment and the second embodiment can be obtained. Further, a modification of the method of manufacturing the printed wiring board according to the embodiment will be described with reference to FIG. In the third embodiment, the metal is selectively formed on the copper box, but in the present modification, the difference is that the metal layer is formed over the entire surface of (4). Hereinafter, a method of manufacturing the printed wiring board of the present modification will be described. First, a copper box laminate 1 having a carrier case is prepared as shown in Fig. 13 (4). In the steel-layered board 1G having the mi, the copper pavilion layer 104 and the carrier tank layer 106 are attached to both sides of the insulating layer. Next, as shown in the figure, the carrier is pulled by the steel laminate 1G having the carrier fl. Next, as shown in Fig. 13 (4), a gold layer 115 is formed by a clock coating on the entire surface of the copper (four) 1 4 ( Money cover). Next, as shown in Fig. 13 (d), a subtracted layer 112 having a predetermined opening pattern is formed on the flat metal layer 115. Next, the metal layer 115 and the copper falling layer 104 in the opening pattern of the anti-bond layer are removed by, for example, 4 ® (). Thereafter, the anti-money layer 112 is removed as shown in Fig. 13 (1). Thereby, a pattern of the conductive circuit 119 composed of the copper pig layer (10) and the metal layer US can be formed. By the above steps, the printed wiring board 101 of the present modification can be obtained. 101102461 201251532 As described above, according to the present embodiment, it is possible to provide a fine circuit having a carrier case, a fine circuit, a shape of a fine circuit, a method of manufacturing a brush wiring board, and a printed wiring board. The method of manufacturing the printed wiring board according to the present embodiment is not limited to the case where the conductor circuit layer is formed on both surfaces of the substrate for the printed board, and may be applied to the case of the single-sided dicing circuit (4) of the printed wiring board. Further, as shown in Fig. 8(c), the double-sided printed wiring board is used as the multilayer printed wiring board of the third embodiment of the inner layer electric board. Therefore, any one of a single-sided printing board, a double-sided printed wiring board, and a multilayer printed wiring board can be manufactured by the manufacturing method of the printed wiring board of embodiment. In the following, an electrolytic copper box having a carrier case according to the present invention and a copper-layer laminated board using a copper-clad copper are used for the production of the printed circuit board. Here, the invention will be described in detail based on the examples and comparative examples in the case of using the electrolytic copper house in "fl", but the present invention is not limited thereto. (Example) (Manufacturing of Metal Foil 1) The carrier was dropped in an electrolytic copper crucible of 18 μm thick (manufactured by Mitsui Metals, Inc., 3EC VLP, the surface roughness of the glossy surface was Ra = 〇. The surface of 2jim and Rz=l» sequentially forms the joint layer φ layer and extremely thin copper coins. For the secrets, the carrier oil is first immersed in an acid-washing tank (diluted sulfuric acid solution, (9) heart, liquid temperature 3% for 20 seconds to remove the surface oil, oxide film, etc.. Then, immersed in 101102461 62 201251532 & interface forming groove (slow-base stupid and di-sal solution, 5g / L, liquid temperature centimeter, c, forming a joint interface layer on the shiny surface of the carrier fl. Then, - immersed in the formation of the block copper (Copper sulfate solution; sulfuric acid concentration 150g/L, copper concentration 65g/L, gelatin concentration 5ppm, chloride ion l〇ppm, liquid temperature 45. In the middle, one side of the (four) one side, parallel plate anode electrode (5) Electrolyzing according to the smooth plating conditions of a current density of 20 A/dm 2 to form a bulk copper layer of 15 μm, and then, on the surface of the bulk copper layer, while being immersed in fine copper particles to form a groove (copper sulfate solution; A sulfuric acid bath having a sulfuric acid concentration of 1〇〇g/L and a copper concentration of 18g/L, and a liquid temperature of 25. In the middle of the crucible, the anode electrode (lead) of the flat plate is arranged in parallel with the single side of the carrier foil. /dm2 is electroplated under electroplating conditions. Then, it is impregnated for preventing fine copper particles. Colonies plated grooves (copper sulfate solution; 15〇g sulfuric acid concentration / L, 65 g of copper concentration / L, solution temperature 45〇C), and while the plating current density condition by 20A / dm2 electrolytically smoothed, 0 is formed. 5μιη finely roughened to a total thickness of 2. Ομπι ultra-thin copper foil. Then, immersed in the anti-rust treatment tank (sulfuric acid solution; sulfuric acid concentration 7〇g/L, zinc concentration 20g/L, liquid temperature 40°C) 'electrolysis according to current density i5A/dm2 and anti-rust treatment using zinc . Here, as the anode electrode, a soluble anode using a zinc plate is used. Then 'dip in the chromic acid treatment tank (chromic acid solution; chromic acid concentration 5g / L, pH11. 5, liquid temperature 55 ° C) for 4 seconds. Finally, it was heated in a drying treatment tank for 60 seconds by means of an electric heater to an ambient temperature of 11 (rc) to obtain a copper foil having a carrier foil. Further, in the step of each tank, it was washed with water. In the washing tank, the impregnation washing is carried out for about 30 seconds. 101102461 63 201251532 (Manufacture of metal foil 2) In the carrier, it is called the thick electrolytic copper book (made by Furukawa Electric Industrial Co., Ltd., F2-WS 'glossy surface) The surface roughness is 2, and the bonding interface layer and the extremely thin steel layer are sequentially formed on the glossy surface of Rz=丨2 (4). As a manufacturing condition, the carrier II is first immersed in an acid cleaning tank (dilute sulfuric acid solution, 15 〇g). /L, liquid temperature 30. Remove the surface oil, oxide film, etc. for 20 seconds in the crucible. Then, immerse in the joint interface to form a tank (carboxy benzobisazole solution, 5 g / L, liquid temperature 4 〇, pH 5) Forming a bonding interface layer on the shiny surface of the carrier foil. Then, immersing in the forming channel of the bulk copper (copper sulfate solution; sulfuric acid concentration 15 〇 g / L, copper concentration 65 g / L, gelatin concentration 5 ppm, vapor ion 3〇ppm, liquid temperature 45. In the middle, one side of the carrier foil, parallel with The anode electrode (lead) of the plate is electrolyzed according to the smooth plating conditions of a current density of 25 A/dm 2 to form a bulk copper layer of 丨 5 μm, and then, on the surface of the bulk copper layer, is impregnated with fine copper particles. In the tank (copper sulfate solution; sulfuric acid concentration l〇〇g/L, copper concentration I8g/L of sulfur valley liquid, liquid temperature 25 ° C), the anode electrode (lead) of the flat plate is arranged in parallel on one side of the carrier foil. Electrolysis is carried out according to the sintering conditions of current density ΙΟΑ/dm2, and then immersed in a plating tank for preventing fine copper particles from falling off (copper sulfate solution; sulfuric acid concentration 15 〇g/L, copper concentration 65 g/L, The liquid temperature is 45. In the middle, the electrolysis is performed under the smooth plating conditions of a current density of 20 A/dm 2 to form 0. Fine micronization of 5 μm to produce a very thin copper foil with a total thickness of 2 μm. Then, immersed in the anti-recording treatment tank (zinc sulfate solution; sulfuric acid concentration 70g / L, zinc concentration 20g / L, liquid temperature 40 ° 〇, electrolysis according to current density i5A / dm2 and use zinc to prevent 101102461 64 201251532 rust treatment Here, as the anode electrode, a soluble anode using a zinc plate is used. Next, it is impregnated in a chromic acid treatment tank (chromic acid solution; chromic acid concentration: 5 g/L, ρΗ11·5, liquid temperature: 55 ° C) 4 seconds. Finally, it was heated in a drying treatment tank for 60 seconds by means of an electric heater to the ambient temperature ii (TC furnace to obtain a copper foil with a carrier foil. Again, between the steps of each tank, It can be washed in a water washing tank for about 30 seconds. (Manufacture of metal foil 3) In a carrier foil, a 12 μm thick electrolytic copper foil (Furui Electric Industrial Co., Ltd., F2-WS 'glossy surface) The roughness is Ra=〇2μιη, Ι1ζ=1. A bonding interface layer and an ultra-thin copper foil layer are sequentially formed on the gloss surface of 2 μm. As a manufacturing condition, the carrier foil is first immersed in an acid cleaning bath (dilute sulfuric acid solution, l5 〇g/L, liquid temperature 30, hydrazine for 20 seconds to remove surface oil, oxide film, etc.. Forming a tank (carboxybenzotriazole solution, 5 g/L, liquid temperature 40 ° C, pH 5), forming a joint interface layer on the shiny surface of the carrier foil. Then, while immersing in the forming channel of the bulk copper (copper pyrophosphate) Solution; potassium pyrophosphate concentration 25 〇 g / L, copper concentration 25 g / L, pH ll, liquid temperature 45. In the 〇, one side of the carrier foil, parallel plate anode electrode (lead), according to current density 1 〇 The smooth plating conditions of A/dm2 were electrolyzed to form 1. 5gm block copper layer. Next, on the surface of the bulk copper layer, it is immersed in a fine copper particle forming tank (copper sulfate solution; sulfuric acid concentration: 100 g/L, copper concentration i8 g/L of sulfuric acid solution, liquid temperature of 25. On one side, the anode electrode (lead) of the flat plate is placed in parallel, and electrolysis is performed according to the sintering conditions of current ΙΟΑ/dm. Then, it is immersed in the plating tank (sulfuric acid) for preventing the peeling of fine copper particles for 101102461 65 201251532 Copper solution; sulfuric acid concentration 150g / L, copper concentration 65g / L, liquid temperature 45 ° C), while the current density of 20A / dm2 smooth plating conditions for electrolysis, forming 〇. The fineness of 5 μm is finely formed to produce a very thin copper foil having a total thickness of 2.0 μm. Subsequently, it was immersed in a rust-preventing treatment tank (zinc sulfate solution; sulfuric acid concentration: 70 g/L, zinc concentration: 20 g/L, liquid temperature: 40 ° C), electrolysis was carried out at a current density of 15 A/dm 2 , and rust-preventing treatment was performed using zinc. Here, as the anode electrode, a soluble anode using a zinc plate is used. Next, dipped in a chromic acid treatment tank (chromic acid solution; chromic acid concentration 5 g / L, pH 11. 5, liquid temperature 55. 〇 4 seconds. Finally, it was heated in a drying treatment tank for 6 seconds by means of an electric heater to a furnace of an ambient temperature of 1 HTC to obtain a copper foil having a carrier foil. Further, between the steps of the respective tanks, the impregnation washing was carried out for about 30 seconds in a water washing tank which can be washed with water. (Example 1) A naphthalene modified phenol novolac epoxy resin (manufactured by DIC Corporation, ΗΡ·50〇〇) as an epoxy resin was used. 5 parts by weight of a styrene-type alkyl resin as a phenol vulcanizing agent (Minghe Chemical Co., Ltd., MEH7851-4H) 8. 5 parts by weight, benzene aging varnish type cyanate resin (primaset PT-30, manufactured by LONZA Co., Ltd.), 17 parts by weight, spherical molten cerium oxide (manufactured by Admatechs Co., Ltd., SO 25R average particle size 〇 5 (im) 65 5 parts by weight, epoxy-based stone shochu (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-4() 3) G. 5 parts by weight of 'dissolved in mercaptoethyl ketone was dissolved. Subsequently, the mixture was stirred using a high-speed stirring device to adjust the amount of nonvolatile matter to 7 wt% to prepare a resin varnish. 101102461 66 201251532 On the tree varnish, it is impregnated into glass woven fabric (basis center of gravity, thickness 87μιη, 曰^:: 螭 螭 ’ ’ WEA_U6E), according to (9). . The furnace was dried for 2 minutes to obtain a pre-collision of the varnish solid content in the prepreg of about 5 g% by weight. The above prepreg weight #2 pieces were superposed and stacked with a carrier ^ pole 0 thin copper box (metal box υ, according to pressure, temperature shoe for heating and pressure forming for 1 hour, the insulating layer was thick. The two sides of the 2〇_ have a steel box of the lumber (Fig. 7(a)). The laminate of the laminate obtained in the example was removed (Fig. 7(b)), as shown in Fig. 7(c), by a carbon dioxide gas laser on a very thin metal box (Mitsubishi Electric Co., Ltd., paper) 6(^乂3_51001; 2) 1 through a 75-hole diameter through hole, in an aqueous solution of potassium permanganate 60g / L and sodium hydroxide 45g / L, by dipping at 80 ° C for 2 minutes, decontamination After that, the in-situ solution (manufactured by Uemura Industrial Co., Ltd., MAT-2B/MAT-2A) was immersed for 5 minutes at a temperature of 55 C, and the catalyst was applied, and THUR-CUP PEA-6A manufactured by Uemura Industrial Co., Ltd. was used. Immersion at a temperature of 36 ° C for 15 minutes to form an electroless plating layer. 7μηη (Fig. 7(d)). On the surface of the electroless plating layer, a UV-sensitive dry film (SUNFORT UFG-255, manufactured by Asahi Kasei Corporation) having a thickness of 25 μm was bonded to the surface of the electroless plating layer, and the minimum line width/line width was 2玻璃/2〇pm pattern of glass mask (manufactured by Topic Co., Ltd.), the position is aligned, exposed by an exposure device (Ono EV-0800), and developed in an aqueous solution of carbon steel to form an anti-mine mask (Fig. 7 (e)). Then, the electroless plating layer was used as the electrode layer electrode, and electroplating copper (81-HL manufactured by Okuno Pharmaceutical Co., Ltd.) was carried out according to 101102461 67 201251532 3A/dm2, 25 minutes to form a copper wiring pattern having a thickness of about 20 μm (Fig. 8(a) ). Next, the above-mentioned plating resist was peeled off by a monoethanolamine solution (R-100, manufactured by Mitsubishi Gas Chemical Co., Ltd.) using a peeling machine (Fig. 8 (b〇). Then, the electroless plating layer belonging to the power feeding layer and Base copper foil (2μιη) by rapid etching (Mitsubishi Gas Chemical Co., Ltd. CPE-800, liquid temperature: 30 ° C, sprayer pressure. 23 MPa) was removed by treatment for 180 seconds to form a pattern of L/S = 20/2 (^m pattern (etched in a pattern) to obtain a printed wiring board (Fig. 8(c)). Finally, as shown in Fig. 8 (dl) In the same manner, a solder resist layer (PSR4000/AUS308, manufactured by Sun Ink Co., Ltd.) was formed on the surface of the circuit, and a nickel plating layer (ICP NICORON GM, manufactured by Okuno Pharmaceutical Co., Ltd.) was immersed at a temperature of 80 ° C for 12 minutes to form 2. 5 μm, and then metal plating (FLASH GOLD 330, manufactured by Okuno Pharmaceutical Co., Ltd.) was immersed at a temperature of 80 ° C for 9 minutes to form 0·05 μm, thereby obtaining a printed wiring board. Further, as shown in Fig. 8 (d-2), a solder resist layer is not formed on the surface of the circuit. (Example 2) The same as Example 1 except that the ultra-thin copper foil having the carrier foil was changed to the metal foil 2. (Example 3) The same procedure as in Example 1 was carried out except that the ultra-thin copper foil having the carrier foil was changed to the metal foil 3. (Example 4) 101102461 68 201251532 The same as Example 1 except that the conditions of the rapid plating of the electroless plating layer and the base copper foil (2 μm) belonging to the power supply layer were changed as described below. The electroless plating layer and the base copper foil (2μιη) belonging to the power supply layer were quickly etched (CPE-800 manufactured by Mitsubishi Gas Chemical Co., Ltd., liquid temperature: 30 〇c, sprayer pressure 0. 23 MPa) was removed by treatment for 240 seconds to form a pattern of L/s = 2 〇 / 2 〇 (pattern etching) to obtain a printed wiring board. (Example 5) The same as Example 1 except that the resin composition used for the laminate was changed. 11 parts by weight of a biphenyl aryl-based epoxy resin (manufactured by Nippon Kayaku Co., Ltd., NC-3000) as an epoxy resin, and a bis-butylene diimide compound (BMI-70, manufactured by KI Chemical Industry Co., Ltd.) 20 parts by weight of 4,4'-diaminodiphenyl decane 3. 5 parts by weight, aluminum hydroxide (HP-360, manufactured by Showa Denko), 65 parts by weight, epoxy decane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-403). 5 parts by weight was dissolved and dissolved in mercaptoethyl ketone. Subsequently, the mixture was stirred with a high-speed stirring device to adjust to a nonvolatile content of 70% by weight to prepare a resin varnish. The above resin varnish was impregnated into a glass woven fabric (base weight l 4 g, thickness 87 μηι, 曰 纺 Ε , ,, WEA-116E), and pre-impregnated by 15 (drying in a TC oven for 2 minutes). The varnish solid content in the body is about 50% by weight of the prepreg. The prepreg is superposed on two sheets, and the extremely thin copper crucible (metal foil 1) having the carrier foil is superposed, and the pressure is 3 MPa and the temperature is 200 ° C. Heat and pressure forming for 1 hour' to obtain a thick layer of insulating layer. 2 〇 mm on both sides with a laminate of copper foil 101102461 69 201251532 board. (Comparative Example 1) (Manufacture of Metallic Foil 4) & Carrier's Electrolysis at 35μηι Thickness (4) (The surface roughness of F2 WS' glossy surface made by Furukawa Electric Co., Ltd. is Ra=〇#m, Rz=1 2μιη The bonding interface layer and the ultra-thin copper junction layer are sequentially formed on the glossy surface. As a manufacturing condition, first, the carrier foil was immersed in an acid cleaning tank (dilute sulfuric acid solution, 150 g/L, liquid temperature 30, and enthalpy for 20 seconds to remove surface oil, oxide film, etc.), and then impregnated at the joint interface. a groove (a slow-base benzotriazine solution, 5 g / L, liquid temperature, pH 5), forming a joint interface layer on the shiny surface of the carrier. Then, while immersing in the formation of the bulk copper (copper sulfate solution; Sulfuric acid concentration 15〇g/L, copper concentration 65g/L 'liquid temperature 45 C) 'On one side of the carrier foil, the anode electrode (8) of the flat plate is arranged in parallel, and electrolysis is performed according to the smooth forging condition of current density 2A/dm2 Forming 1. 5 μιη block copper layer. Next, on the surface of the bulk copper layer, while immersing in a fine copper particle forming tank (copper sulfate solution; sulfuric acid concentration 100 g / L, copper concentration 18 g / L sulfuric acid solution, liquid temperature 25 〇 c) +, while the carrier On one side of the box, the anode electrode (lead) of the flat plate was placed in parallel, and electrolysis was performed for 7 seconds according to the sintering conditions of current density ΙΟΑ/dm2. Next, it is immersed in a plating tank (copper sulfate solution; sulfuric acid concentration: 150 g/L, copper concentration: 65 g/L, liquid temperature of 45 in a crucible), and smoothing by current density ΙΟΑ/dm2 while immersing in a plating tank for preventing fine copper particles from falling off. The material is subjected to electrolysis, and the micro-dimension of 5 μm is applied to produce a very thin copper foil with a total thickness of 2·〇μιη. Then, it is immersed in an anti-scaling treatment tank (sulfur 101102461 70 201251532 zinc acid solution; sulfuric acid concentration 70 g/L, The zinc concentration is 20 g/L, and the liquid temperature is 40. 〇, electrolysis is performed according to the current density ΙΟΑ/dm2, and rust-preventing treatment is performed using zinc. Here, as the anode electrode, a soluble anode using a zinc plate is used. Chromic acid treatment tank (chromic acid solution; chromic acid concentration 5g / L, pH11. 5, liquid temperature 55. 〇) 4 seconds. Finally, it was heated in a drying treatment tank for 6 seconds by means of an electric heater to a furnace having an ambient temperature of 11 ° C to obtain a copper foil having a carrier foil. Further, between the steps of the respective tanks, the impregnation washing was carried out for about 30 seconds in a water washing tank which can be washed with water. A printed wiring board was obtained in the same manner as in Example 1 except that the ultra-thin copper foil having the carrier foil was changed to the metal foil 4. (Comparative Example 2) (Manufacturing of metal crucible 5) In the carrier foil, the surface roughness of the F2-WS' glossy surface of the 35 μη thick electrolytic copper foil (Fuji Electric Co., Ltd.) was Ra=〇2jxm, Rz=1 2μιη The glossy side sequentially forms a joint interface layer and an extremely thin copper foil layer. As a manufacturing condition, first, the carrier foil was immersed in an acid washing tank (diluted sulfuric acid solution, 15 〇g/L, liquid temperature: 3 Torr. The enthalpy was removed for 20 seconds to remove the surface oil, oxide film, etc.) The joint interface forms a groove (carboxybenzotriazole solution, 5 g/L, liquid temperature 4 ,, pH 5), and forms a joint interface layer on the shiny surface of the carrier foil. Then, the groove 1 is formed by immersing in the bulk copper ( Copper pyrophosphate solution; potassium pyrophosphate concentration 32 〇 g / L, copper / Chen 80 g / L, 25% ammonia 2 ml / L, pH 8. 5, liquid temperature 40 ° C), one side of the carrier Ι ’ single side 'parallel arrangement of the plate anode electrode (10)), according to the current density 101102461 71 201251532 degrees 1. The smooth plating conditions of 5A/dm2 were electrolyzed, and then immersed in the formation tank 2 of the bulk copper (copper sulfate solution; sulfuric acid concentration l〇〇g/L, copper concentration 200 g/L, liquid temperature 45 ° C) In the middle side, the anode electrode (lead) of the flat plate is placed on one side of the carrier foil, and electroplated according to the smooth plating conditions of a current density of 3 A/dm 2 to form 1. 5μηι block copper layer. Next, on the surface of the bulk copper layer, while being immersed in a fine copper particle forming tank (copper sulfate solution; sulfuric acid concentrate I00g/L, copper concentration 18 g/L sulfuric acid solution 'liquid temperature 25 乞), while supporting the carrier On one side of the thread, the anode electrode (lead) of the flat plate is arranged in parallel, and electrolysis is performed according to the burning condition of a current density of 5 A/dm 2 . Next, while being immersed in a plating tank (copper sulfate solution; sulfuric acid concentration: 15 〇g/L, steel concentration: 65 g/L, liquid temperature: 45 ° C) for preventing the dropping of fine copper particles, the current density is 1 The smooth plating conditions of 〇A/dm2 were electrolyzed to form 0. 5μΐη finely roughened to make a total thickness 2. 0μιη extremely thin copper enamel. Next, it was immersed in a rust-preventing treatment tank (zinc sulfate solution, sulfuric acid concentration: 70 g/L, zinc concentration: 20 g/L, and liquid temperature of 4 Torr. 电解, electrolysis was carried out at a current density of 15 A/dm 2 and the lin was treated. As a positive electrode, it is set as a soluble anode using a refill plate. Next, it is immersed in a complex acid treatment tank (chromic acid solution; chromic acid concentration 5 g/L, pH ii. 5, liquid temperature 55 χ:) * 4 seconds. In the end, when the money is processed, the second-time electric heater is heated to the ambient temperature of 11 (the furnace of the TC, and the copper box with the carrier box is obtained. Also, in the step of each tank, it is possible to ride on the water. The water (four) towel was fed in (4) three-times of immersion washing. The printed circuit board was obtained in the same manner as in the first embodiment except that the ultra-thin copper foil having the carrier foil was changed to the metal foil 5. (Evaluation) The printed wiring boards obtained in the examples and the comparative examples were evaluated as follows. The evaluation items are shown together with the contents, and the results are shown in Table 1. (1) The XRD film method uses a fully automatic powder X-ray diffraction device (manufactured by Philips Corporation). ~1700 type) 'Measured by Cu-Κα ray as the source of the ray. The peak integration of the ray around the plane orientations (111), (200), (220) and (311) detected by the 2Θ scan is obtained. In addition, the sample was obtained by using a copper foil having a carrier foil obtained in the production example by a vacuum press, and a thin foil surface before and after heat treatment under conditions of 2 ° C, 1 hour, and pressure of 3 MPa was used as a sample surface. Detailed measurement conditions Next. <Measurement conditions> X-ray source: Cu-Ka voltage: 40 kV Current: 50 mA Incident angle: l. Odeg Diffraction angle: 30 to 120 deg Scanning speed: 0.02 deg/sec (2) Crystal grain of copper foil (long The FIB-FESEM (Big Cluster Ion Beam Processing Observation Device FB2000A, Hitachi, Ltd., Electric Field Radiation Scanning Electron 101102461 73 201251532 Microscope S-45GG) was used to modulate the sample profile after the cluster ion beam was applied. According to the SEM image, the field of view is 10000 times, and any 3 points are observed. Further, in the sample, the surface of the thin copper foil before and after the heat treatment was carried out by using a steel box having a carrier box obtained in the production example by a vacuum press at 200 ° C for 1 hour and a pressure of 3 MPa as a sample surface. (3) Shape of thin copper foil during fine processing of LS The scanning electron microscope (manufactured by JEOL Ltd., device name: JSM-6060LV) was used, and the wiring shape was observed obliquely above the line (4). Further, the sample used was a printed wiring board (Fig. 8(c)). Each symbol is as follows: 〇: The thin copper foil portion has no residual edge X. The thin copper box portion has a residual edge (4) AL=L1-L2 Using a scanning electron microscope (manufactured by JEOL Ltd., device name: JSM-6060LV), Observing the cross-sectional shape of the wiring 'calculates the maximum width of the thin copper foil as u and the minimum width of the electrical pattern plating, and calculates it. Further, the sample used was a printed wiring board (Fig. 8(c)).

(5) LS20(L/S-20pm/20gin)之線間 BHasT 細微佈線間之電氣絕緣可靠性,係依施加電壓1〇v、溫度 130 C、濕度85%之條件,藉連續測定進行評價。又,樣本 係使用上述實施例所得之印刷佈線板(圖12(b)) 。又,以絕 緣電阻值成為未滿108Ω之時點作為終點。 101102461 201251532 各符號係如下述。 ◎:超過200小時。 〇:100小時以上且200小時以下。 X :未滿100小時。 101102461 75 201251532 【11 銅粉末之 基準物質 次 CN On loo.o I 1 1 1 1 1 1 I 例 2 戚刦 CO uS (N v〇 v〇 σ; 卜 a\ vd CS 〇\ oi m 斜方向 2. δμτη X X 加熱 前 ρ 00 vd <N m vd cn 〇\ vn (N ο tb|交例1 IS m v〇 <N CN vd Ό 〇; 卜 v〇 Os v〇 CN <Ν cn 斜方向 ^jm 2.9"m 1 X X 加熱 前 ρ in 00 VO CN m VO ΓΟ Os ο 實施例5 IS S 卜 m ?i Os (N % 4»L 础SBC批' 1.7//m 〇 〇 〇 加熱 前 ro (N Ό Os <N <N <n xn CN si v〇 rn <N C\ (N 1 u 實施例4 ί S s vn 寸 p Ov CN 卜 不連續短形 或三角錐 1. 8βτη 〇 1 〇 加熱 前 n Os liS ^r\ v〇 ON v〇 rn (N 〇l On <N 實施例3 s§ v〇 m vd vb … 00 ON <N n 00 (N 不連續短形 或三角錐 1.9"m 〇 in 〇 加熱 前 〇l 卜 2 00 ΓΛ 00 00 On 〇 gj 實施例2 -1 ^ CN VO Cn 00 <^i v〇 〇 oo Os 寸 2 m 不連續短形 或三角錐 1.5//m 1 〇 〇 加熱 前 t to (N Ό i/S v〇 ro 寸 00 〇\ in wo <N (N 實施例1 § p 〇l ?! r-; (N 不連續短形 或三角錐 1.8μηι 〇 ο 〇 加熱 前 m <N v〇 Os Ri ^Ti wn <n vd <Ί On VO (111) (200) (220) (311) "^10 (20〇y{(l 1 !>+<200>K220)+<311)} {(200>K200)}/ {(111>H200>H220)+(311)} 評價項目 rO ? % If 璁€ 面方位(200)之波峰強度 比率(%) S' | |g ®蝴· O靶 § m M # v8 W 結晶形狀 結晶粒徑 LS20之細線加工時之薄箔 形狀 AL(L1-L2) LS20之線間 9L t9寸30ΪΪ01 201251532 本申請案係主張以观年U 26日申請之日本申請案特 願2011-14126號為基礎的優先權’將其所有揭示内容引用 於此。 【圖式簡單說明】 圖1為概略性表示第1施形態之印刷佈線板之製造方法 之一例的剖面圖。 圖2為概略性表示第丨實施形態之印刷佈線板之一部分的 剖面圖。 圖3為用於說明殘邊之概略性表示印刷佈線板的剖面圖。 圖4為用於說明第i實施形態之效果的概略性表示印刷佈 線板的平面圖。 圖5為用於說明第1實施形態之佈線形狀的剖面圖。 圖6為概略性表示第丨實施形態之佈線形狀之變形例的剖 面圖。 圖7為概略性表示第2實施形態之印刷佈線板之製造方法 之一例的剖面圖。 圖8為概略性表示第2實施形態之印刷佈線板之製造方法 之一例的剖面圖。 圖9為概略性表示第2實施形態之佈線形狀之變形例的剖 面圖。 圖10為概略性表示第3實施形態之印刷佈線板之製造方 法之一例的剖面圖。 101102461 77 201251532 圖11為概略性表示第3實施形態之印刷佈線板之製造方 法之一例的剖面圖。 圖12為概略性表示第3實施形態之印刷佈線板之製造方 法之一例的剖面圖。 圖13為概略性表示第1實施形態之印刷佈線板之製造方 法之變形例的剖面圖。 【主要元件符號說明】 1 銅箔積層板 2 絕緣層 4 銅箔層 10 具有載體箔之銅箔積層板 14 金屬層 19 導電電路 20 上面 22 下面 24 側面 100 銅羯積層板 101 印刷佈線板 102 絕緣層 104 銅箔層 105 銅箔層 106 載體箔層 101102461 78 201251532 107 108 109 110 111 112 113 114 115 116 118 119 120 121 122 123 124 ‘ 125 130 132 載體箔層 貫通孔 孔 無電解鍍覆層 無電解鍍覆層 抗鍍層 抗鍍層 鍍覆層 金屬層 金屬層 導電電路 導電電路 抗焊層 抗焊層 第1鑛覆層 第1鍍覆層 第2鍍覆層 第2鍵覆層 絕緣層 鍍覆層 200、201、202 ' 203 ' 204 ' 205 印刷佈線板 101102461 79(5) LS20 (L/S-20pm/20gin) between the wires BHasT The electrical insulation reliability between the fine wirings is evaluated by continuous measurement under the conditions of a voltage of 1〇v, a temperature of 130 C, and a humidity of 85%. Further, the sample was obtained by using the printed wiring board obtained in the above embodiment (Fig. 12(b)). Further, the point at which the insulation resistance value becomes less than 108 Ω is used as the end point. 101102461 201251532 Each symbol is as follows. ◎: More than 200 hours. 〇: 100 hours or more and 200 hours or less. X: Less than 100 hours. 101102461 75 201251532 [11 Reference material of copper powder secondary CN On loo.o I 1 1 1 1 1 1 I Example 2 CO CO CO uS (N v〇v〇σ; 卜 a\ vd CS 〇\ oi m oblique direction 2 Δμτη XX Before heating ρ 00 vd <N m vd cn 〇 v v v v (N ο tb| 交 1 1 1 1 1 m m m 〇 N IS IS IS IS IS IS IS IS IS s s s s s s s s s s s s ^ ^ ^ ^ Jm 2.9"m 1 XX before heating ρ in 00 VO CN m VO ΓΟ Os ο Example 5 IS S 卜 m ii Os (N % 4»L base SBC batch ' 1.7//m 〇〇〇 before heating ro ( N Ό Os < N < N < n xn CN si v〇rn <NC\ (N 1 u Example 4 ί S s vn 寸 p Ov CN 卜 discontinuous short or triangular cone 1. 8βτη 〇1 〇 before heating n Os liS ^r\ v〇ON v〇rn (N 〇l On <N Example 3 s§ v〇m vd vb ... 00 ON <N n 00 (N discontinuous short or triangular cone 1.9"m 〇in 〇Before heating 〇1 Bu 2 00 ΓΛ 00 00 On 〇gj Example 2 -1 ^ CN VO Cn 00 <^iv〇〇oo Os Inch 2 m Discontinuous short or triangular cone 1.5/ /m 1 〇〇 before heating t to (N Ό i/S v〇ro 00 〇 \ in wo <N (N real Example 1 § p 〇l ?! r-; (N discontinuous short or triangular cone 1.8μηι 〇ο 〇 before heating m <N v〇Os Ri ^Ti wn <n vd <Ί On VO (111) (200) (220) (311) "^10 (20〇y{(l 1 !>+<200>K220)+<311)} {(200>K200)}/ {(111>H200&gt ;H220)+(311)} Evaluation item rO ? % If 璁€ Surface orientation (200) peak intensity ratio (%) S' | |g ® butterfly · O target § m M # v8 W Crystal shape crystal size LS20 Thin foil shape AL (L1-L2) in the processing of thin wires 9L t9 inch 30ΪΪ01 in line LS20 201251532 This application claims priority based on Japanese Patent Application No. 2011-14126, which was filed on the U. 'Quot all of its disclosures here. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view schematically showing an example of a method of manufacturing a printed wiring board according to a first embodiment. Fig. 2 is a cross-sectional view schematically showing a part of a printed wiring board according to a second embodiment. Fig. 3 is a cross-sectional view schematically showing a printed wiring board for explaining a residual side. Fig. 4 is a plan view schematically showing a printed wiring board for explaining the effects of the i-th embodiment. Fig. 5 is a cross-sectional view for explaining a wiring shape of the first embodiment. Fig. 6 is a cross-sectional view schematically showing a modification of the wiring shape of the second embodiment. Fig. 7 is a cross-sectional view schematically showing an example of a method of manufacturing a printed wiring board according to a second embodiment. Fig. 8 is a cross-sectional view schematically showing an example of a method of manufacturing a printed wiring board according to a second embodiment. Fig. 9 is a cross-sectional view schematically showing a modification of the wiring shape of the second embodiment. Fig. 10 is a cross-sectional view showing an example of a method of manufacturing a printed wiring board according to a third embodiment. 101102461 77 201251532 FIG. 11 is a cross-sectional view schematically showing an example of a method of manufacturing a printed wiring board according to the third embodiment. Fig. 12 is a cross-sectional view schematically showing an example of a method of manufacturing a printed wiring board according to a third embodiment. Fig. 13 is a cross-sectional view schematically showing a modification of the method of manufacturing the printed wiring board of the first embodiment. [Main component symbol description] 1 Copper foil laminate 2 Insulation layer 4 Copper foil layer 10 Copper foil laminate with carrier foil 14 Metal layer 19 Conductive circuit 20 Upper 22 Lower 24 Side 100 Copper enamel board 101 Printed wiring board 102 Insulation Layer 104 Copper foil layer 105 Copper foil layer 106 Carrier foil layer 101102461 78 201251532 107 108 109 110 111 112 113 114 115 116 118 119 120 121 122 123 124 ' 125 130 132 Carrier foil layer through-hole electroless plating layer electroless Plating layer plating resistance plating layer metal layer metal layer conductive circuit conductive circuit solder resist layer solder resist layer 1st ore layer 1st plating layer 2nd plating layer 2nd bond layer insulating layer plating layer 200 , 201, 202 ' 203 ' 204 ' 205 printed wiring board 101102461 79

Claims (1)

201251532 七、申請專利範圍: 1. 一種印刷佈線板之製造方法,其包含: 由在至少絕緣層之一面上積層有具有載體基材之銅箔的 積層板,分離上述載體基材的步驟; 於上述銅4上,整面或選擇性地形成較上述銅箱厚的金屬 層的步驟;與 藉由至少對上述銅箱進行蝕刻,得到由上述銅箔及上述金 屬層所構成的導電電路圖案的步驟; 於與上述金屬層相接之上述銅箔的面,相對於藉XRD薄 膜法進行測定時之面方位(111)、(200)、(220)及(311)之波峰 強度的和,上述面方位(200)之波峰強度的比率為26%以下。 2. 如申請專利範圍第1項之印刷佈線板之製造方法,其 中,於與上述金屬層相接之上述銅结的上述面,相對於上述 波峰強度的和,上述面方位(200)及(220)之波峰強度之和的 比率為32%以下。 3. 如申請專利範圍第1項之印刷佈線板之製造方法,其 中,上述銅箔係具有長邊之平均長度為2μιη以下的結晶粒。 4. 如申請專利範圍第3項之印刷佈線板之製造方法,其 中,剖面視時,上述長邊之平均長度為2μιη以下的上述結 晶粒所佔之面積率為80%以上。 5. 如申請專利範圍第1項之印刷佈線板之製造方法,其 中’上述銅箔之膜厚為Ο.ίμιη以上且5μηι以下。 101102461 80 201251532 6·如申請專利範㈣1 中,選擇性地形成上述金屬;佈線板之製造方法,其 於上述_上形成具有步驟,係包括: 於上述開口圖崇肉Β 圖案之抗鍍層的步驟; 圖案内且上述Ijjjg 述金屬層的健層的步驟;γ上,雜祕卿成成為上 去除上述抗鍍層的步驟; 得到上述導電電路圖案 行軟蚀刻的步驟。 "^步驟,係包括對上述銅羯進 ㈣觀㈣法其中, 4選擇性地形成上述金屬層的上述步驟之前,進— 步包括: 在上述積層板形成f魏或料軌的步驟; ^上述貝通孔或非貫通孔之内壁使藥液接觸 驟;與 藉由無電解鍍覆,在至少上述銅羯上及上述貫通孔之内壁 上或上述非貫通孔之内壁上形成無電解鑛覆層的步驟。 8. —種印刷佈線板,其具備: 絕緣層;與 導電電路圖案,係設於上述絕緣層上,將銅箔及金屬層積 層而構成; 於與上述金屬層相接之上述銅箔的面,相對於藉XRD薄 膜法進行測定時之面方位(111)、(200)、(220)及(311)之波峰 101102461 201251532 強度的和,上述面方位(200)之波峰強度的比率為26%以下。 9. 如申請專利範圍第8項之印刷佈線板,其中,上述金屬 層含有2層以上的鍍覆膜。 10. 如申請專利範圍第8項之印刷佈線板,其中,於剖面 視時,在將與上述導電電路圖案之延伸存在方向呈正交之寬 度方向之上述銅箔的最大寬度設為L1,將上述金屬層之最 小寬度設為L2時, 上述L1係與L2相同、或小於L2。 11. 如申請專利範圍第10項之印刷佈線板,其中,於俯視 時,由上述銅箔之第1面起朝向第2面,上述銅箔之面積變 101102461 82201251532 VII. Patent application scope: 1. A method for manufacturing a printed wiring board, comprising: a step of separating the carrier substrate by laminating a copper foil having a carrier substrate on at least one of the insulating layers; a step of forming a metal layer thicker than the copper box over the entire surface of the copper 4; and etching the copper box to obtain a conductive circuit pattern composed of the copper foil and the metal layer a step of: summing the surface orientations (111), (200), (220), and (311) of the surface of the copper foil that is in contact with the metal layer with respect to the surface orientation (111), (200), (220), and (311) measured by the XRD film method The ratio of the peak intensity of the plane orientation (200) is 26% or less. 2. The method of manufacturing a printed wiring board according to the first aspect of the invention, wherein the surface orientation (200) and (on the surface of the copper junction in contact with the metal layer with respect to the peak intensity) The ratio of the sum of the peak intensities of 220) is 32% or less. 3. The method of producing a printed wiring board according to the first aspect of the invention, wherein the copper foil has crystal grains having an average length of 2 μm or less on a long side. 4. The method of manufacturing a printed wiring board according to the third aspect of the invention, wherein the area ratio of the crystal grains of the long side having an average length of 2 μm or less is 80% or more. 5. The method of manufacturing a printed wiring board according to the first aspect of the invention, wherein the film thickness of the copper foil is Ο.ίμιη or more and 5 μηι or less. 101102461 80 201251532 6*, in the patent application (4) 1, selectively forming the above metal; the manufacturing method of the wiring board, which has the step of forming on the above-mentioned, comprising: the step of resisting the plating of the pattern of the above-mentioned opening pattern a step of patterning the metal layer of the metal layer in the above-mentioned Ijjjg; gamma, a step of removing the above-mentioned plating layer; and obtaining a step of soft etching the conductive circuit pattern. The "^ step includes the step of forming the above-mentioned metal layer by selectively performing the above-mentioned step of selectively forming the above-mentioned metal layer, and the step of including: forming a f-we or a track in the above-mentioned laminated plate; The inner wall of the through hole or the non-through hole contacts the chemical liquid; and the electroless plating is formed on at least the copper bead and the inner wall of the through hole or the inner wall of the non-through hole by electroless plating The steps of the layer. 8. A printed wiring board comprising: an insulating layer; and a conductive circuit pattern formed on the insulating layer, wherein a copper foil and a metal layer are laminated; and a surface of the copper foil that is in contact with the metal layer The ratio of the peak intensities of the plane orientations (111), (200), (220), and (311) measured by the XRD film method to the peak intensity of the surface orientation (200) is 26%. the following. 9. The printed wiring board according to claim 8, wherein the metal layer contains two or more plating films. 10. The printed wiring board according to claim 8, wherein the maximum width of the copper foil in the width direction orthogonal to the direction in which the conductive circuit pattern extends is set to L1 in a cross-sectional view, When the minimum width of the metal layer is L2, the L1 is the same as L2 or smaller than L2. 11. The printed wiring board according to claim 10, wherein the area of the copper foil is changed from the first surface of the copper foil to the second surface in a plan view, and the area of the copper foil is changed to 101102461.
TW101102461A 2011-01-26 2012-01-20 Print circuit board and method of manufacturing the same TWI561128B (en)

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JP7070188B2 (en) 2018-07-17 2022-05-18 株式会社村田製作所 Inductor parts
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US11979983B2 (en) 2019-07-04 2024-05-07 Sumitomo Electric Industries, Ltd. Printed wiring board and method of manufacturing the same
US11512406B2 (en) 2019-10-17 2022-11-29 Rohm And Haas Electronic Materials Llc Method of enhancing copper electroplating
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Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2680234B2 (en) * 1992-11-12 1997-11-19 株式会社日立製作所 Wiring pattern forming method
JP2754157B2 (en) * 1994-03-31 1998-05-20 三井金属鉱業株式会社 Manufacturing method of electrolytic copper foil for printed wiring board
JP4137279B2 (en) * 1999-04-23 2008-08-20 イビデン株式会社 Printed wiring board and manufacturing method thereof
JP2003243810A (en) * 2002-02-15 2003-08-29 Mitsubishi Gas Chem Co Inc Method of manufacturing printed wiring board equipped with very fine wire pattern
JP2007095910A (en) * 2005-09-28 2007-04-12 Elna Co Ltd Manufacturing method of wiring board
JP2007182623A (en) * 2005-12-08 2007-07-19 Mitsui Mining & Smelting Co Ltd Method for producing thin metal product
JP2008258309A (en) * 2007-04-03 2008-10-23 Hitachi Chem Co Ltd Punching method for printed circuit board, and printed circuit board
JP5588607B2 (en) * 2007-10-31 2014-09-10 三井金属鉱業株式会社 Electrolytic copper foil and method for producing the electrolytic copper foil
CN101472407B (en) * 2007-12-25 2012-01-25 日本特殊陶业株式会社 Wiring substrate and manufacturing method thereof

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