TWI761251B - Surface-treated copper foil and copper clad laminate - Google Patents

Surface-treated copper foil and copper clad laminate Download PDF

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TWI761251B
TWI761251B TW110124716A TW110124716A TWI761251B TW I761251 B TWI761251 B TW I761251B TW 110124716 A TW110124716 A TW 110124716A TW 110124716 A TW110124716 A TW 110124716A TW I761251 B TWI761251 B TW I761251B
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copper foil
treated
layer
crystal plane
treated copper
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TW202302913A (en
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賴建銘
賴耀生
周瑞昌
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長春石油化學股份有限公司
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Priority to US17/485,482 priority patent/US11540389B1/en
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Priority to KR1020210133024A priority patent/KR102482422B1/en
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Abstract

A surface-treated copper foil including a treated surface, where the root mean square height (Sq) of the treated surface is 0.20 to 1.50 μm and the texture aspect ratio (Str) of the treated surface is below 0.65. When the surface-treated copper foil is heated at a temperature of 200°C for 1 hour, the ratio of the integrated intensity of (111) peak to the sum of the integrated intensities of (111) peak, (200) peak, and (220) peak of the treated surface is at least 60%.

Description

表面處理銅箔及銅箔基板Surface treated copper foil and copper foil substrate

本揭露係關於一種銅箔的技術領域,特別是關於一種表面處理銅箔及其銅箔基板。The present disclosure relates to the technical field of copper foils, and in particular, to a surface-treated copper foil and a copper foil substrate thereof.

隨著電子產品逐漸朝向輕薄以及傳遞高頻訊號的趨勢發展,對於銅箔和銅箔基板的需求也日益提昇。一般而言,銅箔基板的銅導電線路會被絕緣載板承載,且藉由導電線路的布局設計,其可將電訊號沿著預定之路徑傳遞至預定區域。此外,對於用於傳遞高頻電訊號(例如高於10GHz)的銅箔基板而言,其銅箔基板的導電線路亦必須進一步優化,以降低因集膚效應(skin effect)而產生的訊號傳遞損失(signal transmission loss)。所謂的集膚效應,是指隨著電訊號的頻率增加,電流的傳遞路徑會愈集中於導線的表面,例如緊鄰於載板的導線表面。為了降低集膚效應而產生的訊號傳遞損失,現有作法是盡可能將銅箔基板中緊鄰於載板的導線表面予以平坦化。此外,為了同時維持導線表面和載板間的附著性,亦可採用反轉處理銅箔(reverse treated foil, RTF)以製作導線。其中,反轉處理銅箔係指銅箔的輥筒面(drum side)會被施行粗化處理製程的一種銅箔。As electronic products become thinner and lighter and transmit high-frequency signals, the demand for copper foil and copper foil substrates is also increasing. Generally speaking, the copper conductive lines of the copper foil substrate are carried by an insulating carrier, and through the layout design of the conductive lines, the electrical signals can be transmitted to a predetermined area along a predetermined path. In addition, for copper foil substrates used to transmit high-frequency electrical signals (such as higher than 10 GHz), the conductive circuits of the copper foil substrates must be further optimized to reduce the signal transmission caused by the skin effect (skin effect). loss (signal transmission loss). The so-called skin effect means that as the frequency of the electrical signal increases, the transmission path of the current will be more concentrated on the surface of the wire, such as the surface of the wire next to the carrier board. In order to reduce the signal transmission loss caused by the skin effect, the current practice is to flatten the surface of the conductors in the copper foil substrate that is adjacent to the carrier as much as possible. In addition, in order to maintain the adhesion between the surface of the wire and the carrier at the same time, reverse treated foil (RTF) can also be used to fabricate the wire. Wherein, the inversion-treated copper foil refers to a copper foil in which the drum side of the copper foil is subjected to a roughening process.

即便上述作法可降低銅箔基板所產生的訊號傳遞損失,但當導線表面過於平坦時,仍會造成導線和載板間的附著性降低,使得銅箔基板中的導線容易自載板的表面剝離,致使電訊號無法沿著預定路徑傳遞至預定區域。Even if the above method can reduce the signal transmission loss caused by the copper foil substrate, when the surface of the wire is too flat, the adhesion between the wire and the carrier will still be reduced, making the wire in the copper foil substrate easy to peel off from the surface of the carrier , so that the electrical signal cannot be transmitted to the predetermined area along the predetermined path.

因此,仍有必要提供一種表面處理銅箔及銅箔基板,以解決先前技術中所存在之不足及缺失。Therefore, it is still necessary to provide a surface-treated copper foil and a copper foil substrate to solve the deficiencies and deficiencies in the prior art.

有鑑於此,本揭露係提供有一種改良的表面處理銅箔及銅箔基板,解決了先前技術中所存在的缺失。In view of this, the present disclosure provides an improved surface-treated copper foil and copper foil substrate, which solves the deficiencies in the prior art.

根據本揭露的一實施例,係提供一種表面處理銅箔,表面處理銅箔包括處理面,其中處理面的均方根高度(Sq)為0.20至1.50μm,處理面的表面性狀長寬比(Str)為0.65以下。當表面處理銅箔在200°C的環境中加熱1小時後,處理面的(111)晶面的繞射峰積分強度和(111)晶面、(200)晶面及(220)晶面的繞射峰積分強度的總和的比值至少為60%。According to an embodiment of the present disclosure, a surface-treated copper foil is provided. The surface-treated copper foil includes a treated surface, wherein the root mean square height (Sq) of the treated surface is 0.20 to 1.50 μm, and the aspect ratio of the surface properties of the treated surface is ( Str) is 0.65 or less. When the surface-treated copper foil was heated at 200°C for 1 hour, the integrated intensity of the diffraction peak of the (111) crystal plane of the treated surface and the diffraction peaks of the (111) crystal plane, (200) crystal plane and (220) crystal plane The ratio of the sum of the integrated intensities of the diffraction peaks is at least 60%.

根據本揭露的另一實施例,係提供一種銅箔基板,銅箔基板包括載板以及設置於載板的至少一表面的表面處理銅箔。其中,表面處理銅箔包括主體銅箔以及表面處理層,表面處理層設置在主體銅箔和載板之間,其中表面處理層包括面向載板的處理面,處理面的均方根高度(Sq)為0.20至1.50μm,處理面的表面性狀長寬比(Str)為0.65以下,其中,處理面的(111)晶面的繞射峰積分強度和(111)晶面、(200)晶面及(220)晶面的總和繞射峰積分強度的比值至少為60%。According to another embodiment of the present disclosure, a copper foil substrate is provided. The copper foil substrate includes a carrier board and a surface-treated copper foil disposed on at least one surface of the carrier board. The surface-treated copper foil includes a main copper foil and a surface-treated layer, and the surface-treated layer is disposed between the main copper foil and the carrier, wherein the surface-treated layer includes a treated surface facing the carrier, and the root mean square height of the treated surface (Sq ) is 0.20 to 1.50 μm, and the aspect ratio (Str) of the surface properties of the treated surface is 0.65 or less, wherein the integrated intensity of diffraction peaks of the (111) crystal plane and the (111) crystal plane and the (200) crystal plane of the treated surface are And the ratio of the total diffraction peak integral intensity of the (220) crystal plane is at least 60%.

根據上述實施例,當表面處理銅箔的處理面的均方根高度(Sq)為0.20至1.50μm,處理面的表面性狀長寬比(Str)為0.65以下,且當表面處理銅箔在200°C的環境中加熱1小時後,處理面的(111)晶面的繞射峰積分強度和(111)晶面、(200)晶面及(220)晶面的繞射峰積分強度的總和的比值至少為60%時。當後續將表面處理銅箔壓合至載板時,除了可以保持處理面和載板間的附著性及信賴性,亦能保持較低的訊號傳遞損失程度,因而可以滿足業界對於表面處理銅箔及銅箔基板的需求。According to the above embodiment, when the root mean square height (Sq) of the treated surface of the surface treated copper foil is 0.20 to 1.50 μm, the aspect ratio (Str) of the surface properties of the treated surface is 0.65 or less, and when the surface treated copper foil is at 200 After heating in the environment of °C for 1 hour, the integrated intensity of the diffraction peak of the (111) crystal plane of the treated surface and the sum of the integrated intensity of the diffraction peak of the (111) crystal plane, (200) crystal plane and (220) crystal plane ratio is at least 60%. When the surface-treated copper foil is subsequently laminated to the carrier, in addition to maintaining the adhesion and reliability between the treated surface and the carrier, it can also maintain a low level of signal transmission loss, which can meet the industry’s requirements for surface-treated copper foil. And the demand for copper foil substrates.

於下文中,係加以陳述表面處理銅箔及銅箔基板的具體實施方式,俾使本技術領域中具有通常技術者可據以實現本發明。該些具體實施方式可參考相對應的圖式,使該些圖式構成實施方式之一部分。雖然本揭露之實施例揭露如下,然而其並非用以限定本揭露,任何熟習此技藝者,在不脫離本揭露之精神和範疇內,當可作些許之更動與潤飾。其中,各實施例以及實驗例所使用的方法,如無特別說明,則為常規方法。In the following, specific embodiments of the surface-treated copper foil and the copper foil substrate are described, so that those skilled in the art can implement the present invention accordingly. For these specific embodiments, reference may be made to the corresponding drawings, so that these drawings constitute a part of the embodiments. Although the embodiments of the present disclosure are disclosed as follows, they are not intended to limit the present disclosure. Anyone skilled in the art can make some changes and modifications without departing from the spirit and scope of the present disclosure. Among them, the methods used in the respective examples and experimental examples are conventional methods unless otherwise specified.

針對本揭露中所提及的空間相關的敘述詞彙,「在…上」及「在…上方」等用語在本揭露中的含義應該以最寬泛方式來解釋,使得「在…上」及「在…上方」等用語不僅指直接處於某物上,而且還可以包括在有中間特徵或中間層位於二者之間的情況下而處於某物上,並且「在…上」或「在…上方」不僅指處於某物之上或上方,而且還可以包括在二者之間沒有中間特徵或中間層的情況下而處於在某物之上或上方(即直接處於某物上)之態樣。For the spatially related narrative terms mentioned in this disclosure, the meanings of the terms "on" and "above" in this disclosure should be construed in the broadest possible way, such that "on" and "on" Terms such as "over" not only refer to being directly on something, but can also include being on something with an intervening feature or an intervening layer in between, and being "on" or "over" Not only means being on or over something, but can also include being over or over (ie, directly over) something without intervening features or layers in between.

此外,在下文中除非有相反的指示,本揭露及申請專利範圍所闡述的數值參數係約略數,其可視需要而變化,或至少應根據所揭露之有意義的位數數字並且使用通常的進位方式,以解讀各個數值參數。本揭露中,範圍可表示為從一端點至另一端點,或是在兩個端點之間。除非特別聲明,否則本揭露中的所有範圍皆包含端點。Furthermore, unless indicated to the contrary hereinafter, the numerical parameters set forth in the present disclosure and the claimed scope of the application are approximations, which may be changed as needed, or at least should be based on the disclosed meaningful digits and use conventional rounding, to interpret each numerical parameter. In this disclosure, ranges can be expressed as from one end point to the other end point, or as between the two end points. All ranges in this disclosure are inclusive of endpoints unless specifically stated otherwise.

須知悉的是,在不脫離本揭露的精神下,下文所描述的不同實施方式中的技術特徵彼此間可以被置換、重組、混合,以構成其他的實施例。It should be noted that, without departing from the spirit of the present disclosure, the technical features in the different embodiments described below may be replaced, recombined, and mixed with each other to form other embodiments.

本文描述的表面處理銅箔係包括處理面,當後續將表面處理銅箔壓合至載板時,此處理面可面向且貼合至載板。The surface-treated copper foils described herein include a treated surface that can face and adhere to the carrier when the surface-treated copper foil is subsequently laminated to the carrier.

表面處理銅箔可包括主體銅箔及可選的表面處理層。主體銅箔可透過電解沉積(或稱電解、電沉積、電鍍)製程而被形成,其可以具有兩相對設置的輥筒面(drum side)及沉積面(deposited side)。可選的,表面處理層可被設置於主體銅箔的輥筒面及沉積面的至少其中一者之上。表面處理層可以是單層結構或多層堆疊結構。舉例而言,表面處理層可以是包括多個子層的多層堆疊結構,且各表面處理層可分別設置於主體銅箔的輥筒面及沉積面之上,但不限定於此。各表面處理層中的子層可選自由粗化層、鈍化層、防鏽層以及耦合層所構成之群組,但不限定於此。The surface-treated copper foil may include a bulk copper foil and an optional surface-treated layer. The main copper foil can be formed by an electrolytic deposition (or called electrolysis, electrodeposition, electroplating) process, and it can have two oppositely disposed drum sides and deposited sides. Optionally, the surface treatment layer may be disposed on at least one of the roller surface and the deposition surface of the main copper foil. The surface treatment layer may have a single-layer structure or a multi-layer stack structure. For example, the surface treatment layer may be a multi-layer stack structure including a plurality of sub-layers, and each surface treatment layer may be respectively disposed on the roll surface and the deposition surface of the main copper foil, but not limited thereto. The sub-layers in each surface treatment layer can be selected from the group consisting of a roughening layer, a passivation layer, an anti-rust layer and a coupling layer, but not limited thereto.

針對本揭露實施例的表面處理銅箔,其處理面的均方根高度(Sq)可為0.20至1.50μm,且處理面的表面性狀長寬比(Str)可為0.65以下。此外,當表面處理銅箔在200°C的環境中加熱1小時後,處理面的(111)晶面的繞射峰積分強度和(111)晶面、(200)晶面及(220)晶面的繞射峰積分強度的總和的比值可至少為60%。由於表面處理銅箔的處理面在後續製程會被貼合至載板,藉由將表面處理銅箔的處理面的均方根高度(Sq)及表面性狀長寬比(Str)控制於上述數值範圍,相較於現有的表面處理銅箔,本揭露實施例的表面處理銅箔和載板之間的剝離強度可更為提昇,且較能通過焊料浴的信賴性測試。此外,當進一步將各晶面的繞射峰積分強度的比值控制於上述範圍,可進一步達到較低的高頻訊號傳遞損失。For the surface-treated copper foil of the embodiment of the present disclosure, the root mean square height (Sq) of the treated surface can be 0.20 to 1.50 μm, and the aspect ratio (Str) of the treated surface can be less than 0.65. In addition, when the surface-treated copper foil was heated in an environment of 200°C for 1 hour, the integrated intensity of diffraction peaks of the (111) crystal plane and the (111) crystal plane, (200) crystal plane and (220) crystal plane of the treated surface The ratio of the sum of the integrated intensities of the diffraction peaks of the facets may be at least 60%. Since the treated surface of the surface-treated copper foil will be attached to the carrier in the subsequent process, the root mean square height (Sq) and the aspect ratio (Str) of the treated surface of the surface-treated copper foil are controlled to the above values Compared with the existing surface-treated copper foil, the peeling strength between the surface-treated copper foil and the carrier plate of the embodiment of the present disclosure can be further improved, and can pass the reliability test of the solder bath better. In addition, when the ratio of the integrated intensity of the diffraction peaks of each crystal plane is further controlled within the above-mentioned range, a lower transmission loss of high-frequency signals can be further achieved.

其中,上述「均方根高度(Sq)」係指一表面在特定範圍中各點的高度均方根,其相當於高度的標準差。由於均方根高度係計算高度的均方根,因此其對於高度的變化更為敏銳。根據本揭露一實施例,表面處理銅箔的處理面的均方根高度(Sq)為0.20μm至1.50μm,例如是0.20μm、0.50μm、0.60μm、0.80μm、1.10μm、1.50μm、或其中的任何數值。較佳為0.21μm至1.44μm,更佳為0.60μm至1.25μm。Among them, the above-mentioned "root mean square height (Sq)" refers to the root mean square height of each point of a surface in a specific range, which is equivalent to the standard deviation of the height. Since RMS height calculates the root mean square of height, it is more sensitive to changes in height. According to an embodiment of the present disclosure, the root mean square height (Sq) of the treated surface of the surface-treated copper foil is 0.20 μm to 1.50 μm, such as 0.20 μm, 0.50 μm, 0.60 μm, 0.80 μm, 1.10 μm, 1.50 μm, or any value in it. It is preferably 0.21 μm to 1.44 μm, more preferably 0.60 μm to 1.25 μm.

上述「表面性狀長寬比(Str)」係指衡量某一表面的表面紋理(surface texture)在各方向上的一致性的指標,即衡量該表面的等向性(isotropy)及異向性(anisotropy)的程度。表面性狀長寬比(Str)的數值落在0至1之間,當表面性狀長寬比(Str)為0或趨近0時,代表該表面的表面紋理呈顯著的異向性,而呈現高度規律的表面形貌。舉例而言,當表面性狀長寬比(Str)為0時,相鄰的各波峰和各波谷可均呈現條狀且彼此平行排列。相較之下,當表面性狀長寬比(Str)為1或趨近1時,代表該表面的表面紋理呈強烈的等向性,而呈現高度隨機的表面形貌。舉例而言,當表面性狀長寬比(Str)為1時,各波峰和各波谷呈現隨機排列。根據本揭露一實施例,表面處理銅箔的處理面的表面性狀長寬比(Str)為0.65以下,例如是0.05、0.15、0.25、0.35、0.45、0.55、0.65、或其中的任何數值。較佳為0.10至0.65,更佳為0.60以下。The above-mentioned "surface aspect ratio (Str)" refers to an index to measure the consistency of the surface texture of a surface in all directions, that is, to measure the isotropy and anisotropy (isotropy) of the surface. anisotropy). The value of the aspect ratio (Str) of the surface property falls between 0 and 1. When the aspect ratio (Str) of the surface property is 0 or approaching 0, the surface texture of the surface is significantly anisotropic, and the Highly regular surface topography. For example, when the aspect ratio (Str) of the surface feature is 0, each adjacent wave crest and each wave trough can be strip-shaped and arranged parallel to each other. In contrast, when the aspect ratio (Str) of the surface features is 1 or close to 1, the surface texture representing the surface is strongly isotropic, and the surface morphology is highly random. For example, when the aspect ratio (Str) of the surface feature is 1, the peaks and troughs are randomly arranged. According to an embodiment of the present disclosure, the aspect ratio (Str) of the surface properties of the treated surface of the surface-treated copper foil is 0.65 or less, such as 0.05, 0.15, 0.25, 0.35, 0.45, 0.55, 0.65, or any value therein. Preferably it is 0.10-0.65, More preferably, it is 0.60 or less.

上述的銅(111)晶面、銅(200)晶面及銅(220)晶面的繞射峰積分強度,係利用低掠角X光繞射(掠射角可為

Figure 02_image001
Figure 02_image003
)量測表面處理銅箔的處理面,以用於表徵表面處理銅箔的表層區域(例如是距離處理面的深度為0μm至1μm的區域)的各晶面的占比。因此,藉由低掠角X光繞射,可展現出銅箔的表層區域的晶面特性,而非用於展現出銅箔的內部區域的晶面特性。此外,由於在傳遞高頻電訊號時,銅(111)晶面較不易減損電訊號,因此當提昇銅(111)晶面的占比時,可降低高頻電訊號損失的程度。另一方面,由於表面處理銅箔的主體銅箔的各晶面的占比可能會因後續熱處理製程(例如:熱壓合製程)的溫度和持續時間而產生變動,因此本揭露係藉由在200°C的環境中對表面處理銅箔加熱1小時,以模擬表面處理銅箔經過熱壓合製程後的晶面特性。根據本揭露一實施例,當在200°C的環境中對表面處理銅箔加熱1小時後,處理面的(111)晶面的繞射峰積分強度和(111)晶面、(200)晶面及(220)晶面的繞射峰積分強度的總和的比值至少為60%,較佳為60%至90%,或是處理面的(220)晶面的繞射峰積分強度和(111)晶面、(200)晶面及(220)晶面的繞射峰積分強度的總和的比值可進一步小於16.50%。 The diffraction peak integral intensity of the above-mentioned copper (111) crystal plane, copper (200) crystal plane and copper (220) crystal plane is based on low grazing angle X-ray diffraction (the grazing angle can be
Figure 02_image001
to
Figure 02_image003
) measures the treated surface of the surface-treated copper foil to characterize the proportion of each crystal plane in the surface layer region of the surface-treated copper foil (eg, a region with a depth of 0 μm to 1 μm from the treated surface). Therefore, by means of low-grazing-angle X-ray diffraction, the crystal plane characteristics of the surface layer region of the copper foil can be displayed, rather than the crystal plane characteristics of the inner region of the copper foil. In addition, since the copper (111) crystal plane is less likely to degrade the electrical signal when transmitting high-frequency electrical signals, when the proportion of the copper (111) crystal plane is increased, the degree of loss of high-frequency electrical signals can be reduced. On the other hand, since the proportion of each crystal plane of the main copper foil of the surface-treated copper foil may vary due to the temperature and duration of the subsequent heat treatment process (for example, the thermocompression bonding process), the present disclosure is based on the The surface-treated copper foil was heated in an environment of 200°C for 1 hour to simulate the crystal plane characteristics of the surface-treated copper foil after the thermocompression bonding process. According to an embodiment of the present disclosure, when the surface-treated copper foil is heated in an environment of 200° C. for 1 hour, the integrated intensity of diffraction peaks of the (111) crystal plane and the (111) crystal plane and the (200) crystal plane of the treated surface The ratio of the sum of the integrated intensities of the diffraction peaks of the (220) plane and the (220) crystal plane is at least 60%, preferably 60% to 90%, or the integrated intensities of the diffraction peaks of the (220) crystal plane of the treated plane and the (111) The ratio of the sum of the integrated intensities of the diffraction peaks of the ) crystal plane, the (200) crystal plane, and the (220) crystal plane may be further less than 16.50%.

針對上述的表面處理銅箔,其結構可例示如第1圖。第1圖是根據本揭露一實施例所繪示的表面處理銅箔的剖面示意圖。如第1圖所示,表面處理銅箔100係至少包括處理面100A,且表面處理銅箔100至少包括主體銅箔110。The structure of the above-mentioned surface-treated copper foil can be exemplified as shown in FIG. 1 . FIG. 1 is a schematic cross-sectional view of a surface-treated copper foil according to an embodiment of the present disclosure. As shown in FIG. 1 , the surface-treated copper foil 100 includes at least the treated surface 100A, and the surface-treated copper foil 100 includes at least the main body copper foil 110 .

其中,主體銅箔110可例如是電解銅箔或壓延銅箔,其厚度通常大於或等於6μm,例如介於7至250μm之間,或介於9至210μm之間,但不限定於此。對於主體銅箔110為電解銅箔之情形,此電解銅箔可透過電沉積(或稱電解、電解沉積、電鍍)製程而被形成。主體銅箔110具有兩相對設置的第一面110A和第二面110B。根據本揭露的一實施例,當主體銅箔110為電解銅箔時,電解銅箔的輥筒面(drum side)可以對應至主體銅箔110的第一面110A,而電解銅箔的沉積面(deposited side)可以對應至主體銅箔110的第二面110B,但不限定於此。根據本揭露的一實施例,當主體銅箔110為電解銅箔,且主體銅箔110的第一面110A為電解銅箔的輥筒面時,在藉由施行電解沉積(electrodeposition)以形成電解銅箔的過程中,電解銅箔的輥筒面可受到製箔機的陰極輥筒的晶粒數或晶粒度數(grain size number)的影響,使得電解銅箔的輥筒面可展現出特定的表面形貌,例如研磨痕,且此研磨痕在空間上的分佈可以呈現等向性(isotropy)或異向性(anisotropy),較佳為異向性排列。The main copper foil 110 may be, for example, electrolytic copper foil or rolled copper foil, and its thickness is generally greater than or equal to 6 μm, for example, between 7 and 250 μm, or between 9 and 210 μm, but not limited thereto. In the case where the main copper foil 110 is an electrolytic copper foil, the electrolytic copper foil can be formed through an electrodeposition (or electrolysis, electrolytic deposition, electroplating) process. The main copper foil 110 has two opposing first surfaces 110A and second surfaces 110B. According to an embodiment of the present disclosure, when the main copper foil 110 is an electrolytic copper foil, the drum side of the electrolytic copper foil may correspond to the first side 110A of the main copper foil 110 , and the deposition surface of the electrolytic copper foil (deposited side) may correspond to the second side 110B of the main copper foil 110, but is not limited thereto. According to an embodiment of the present disclosure, when the main copper foil 110 is an electrolytic copper foil, and the first surface 110A of the main copper foil 110 is the roller surface of the electrolytic copper foil, the electrolytic deposition is performed to form an electrolytic copper foil. In the process of copper foil, the roll surface of the electrolytic copper foil can be affected by the grain number or grain size number of the cathode roll of the foil making machine, so that the roll surface of the electrolytic copper foil can exhibit a specific The surface morphology, such as grinding marks, and the spatial distribution of the grinding marks can be isotropy (isotropy) or anisotropy (anisotropy), preferably anisotropic arrangement.

根據本揭露的一實施例,主體銅箔110的第一面110A和第二面110B上可分別設置有其他的層,例如可在第一面110A設置表面處理層,例如第一表面處理層112a,及/或在第二面110B設置另一表面處理層,例如第二表面處理層112b。第一表面處理層112a的外側面可以被視為是表面處理銅箔100的處理面100A,且經由後續將表面處理銅箔100壓合至載板的製程,此處理面100A會接觸載板。根據本揭露的其他實施例,主體銅箔110的第一面110A和第二面110B可以進一步設置有其他的單層或多層結構、或是第一面110A和第二面110B的表面處理層可以被其他的單層或多層結構取代、或是第一面110A和第二面110B未設置有任何層,但不限定於此。因此,在這些實施例中,表面處理銅箔100的處理面100A便不會對應至第一表面處理層112a的外側面,而可能會對應至其他單層或多層結構的外側面,或可能會對應至主體銅箔110的第一面110A和第二面110B,但不限定於此。According to an embodiment of the present disclosure, other layers may be respectively provided on the first surface 110A and the second surface 110B of the main copper foil 110 , for example, a surface treatment layer such as the first surface treatment layer 112 a may be provided on the first surface 110A , and/or another surface treatment layer, such as a second surface treatment layer 112b, is disposed on the second surface 110B. The outer side of the first surface treatment layer 112a can be regarded as the treatment surface 100A of the surface-treated copper foil 100, and through the subsequent process of laminating the surface-treated copper foil 100 to the carrier, the treatment surface 100A will contact the carrier. According to other embodiments of the present disclosure, the first side 110A and the second side 110B of the main copper foil 110 may be further provided with other single-layer or multi-layer structures, or the surface treatment layers of the first side 110A and the second side 110B may be It is replaced by another single-layer or multi-layer structure, or the first surface 110A and the second surface 110B are not provided with any layers, but not limited to this. Therefore, in these embodiments, the treated surface 100A of the surface-treated copper foil 100 does not correspond to the outer side of the first surface-treated layer 112a, but may correspond to the outer side of other single-layer or multi-layer structures, or may It corresponds to the first surface 110A and the second surface 110B of the main copper foil 110, but is not limited thereto.

前述第一表面處理層112a和第二表面處理層112b各自可以是單層,或是包括多個子層的堆疊層。對於第一表面處理層112a是堆疊層之情形,各子層可選自由粗化層114、第一鈍化層116a、第一防鏽層118a以及耦合層120所構成之群組;而針對第二表面處理層112b為包括多個子層的多層堆疊結構之情形,各子層可選自由第二鈍化層116b以及第二防鏽層118b所構成之群組。第一鈍化層116a及第二鈍化層116b的組成彼此可以相同或不同,而第一防鏽層118a及第二防鏽層118b的組成彼此可以相同或不同。Each of the aforementioned first surface treatment layer 112a and the second surface treatment layer 112b may be a single layer, or a stacked layer including a plurality of sublayers. For the case where the first surface treatment layer 112a is a stacked layer, each sub-layer can be selected from the group consisting of the roughening layer 114, the first passivation layer 116a, the first anti-rust layer 118a and the coupling layer 120; and for the second The surface treatment layer 112b is a multi-layer stack structure including a plurality of sub-layers, and each sub-layer can be selected from the group formed by the second passivation layer 116b and the second anti-rust layer 118b. The compositions of the first passivation layer 116a and the second passivation layer 116b may be the same or different from each other, and the compositions of the first anti-rust layer 118a and the second anti-rust layer 118b may be the same or different from each other.

前述粗化層114包括粗化粒子(nodule)。粗化粒子可用於增進主體銅箔110的表面粗糙度,其可為銅粗化粒子或銅合金粗化粒子。其中,為了防止粗化粒子自主體銅箔110剝離,粗化層114可進一步包含設置在粗化粒子上的覆蓋層,用以覆蓋住粗化粒子。根據本揭露的一實施例,對於粗化層114中的粗化粒子是透過電解沉積而被形成於主體銅箔110的第一面110A的情形,粗化粒子的分佈可受到其下方主體銅箔110的表面形貌的影響,使得粗化粒子排列呈現等向性或異向性排列。舉例而言,當主體銅箔110的第一面110A的表面形貌呈現異向性排列時,則對應設置於該面上的粗化粒子亦可呈現異向性排列。根據本揭露的一實施例,由於第一表面處理層112a中的第一鈍化層116a、第一防鏽層118a以及耦合層120的總和厚度遠小於粗化層114的厚度,因此銅箔100的處理面100A的表面形貌,例如均方根高度(Sq)及表面性狀長寬比(Str),主要受粗化層114的影響。此外,可以透過調整粗化層114中的粗化粒子的數量及尺寸,以調整表面處理銅箔100的處理面100A的表面粗糙度。舉例而言,針對經由電解沉積而形成的粗化粒子及覆蓋層,可以透過調整電解液中的添加劑種類、添加劑濃度及/或電流密度,以調整粗化粒子的型態及排列,但不限定於此。The aforementioned roughened layer 114 includes roughened particles. The roughened particles can be used to improve the surface roughness of the main copper foil 110 , and can be copper roughened particles or copper alloy roughened particles. Wherein, in order to prevent the roughened particles from being peeled off from the body copper foil 110 , the roughened layer 114 may further include a cover layer disposed on the roughened particles to cover the roughened particles. According to an embodiment of the present disclosure, in the case where the roughened particles in the roughened layer 114 are formed on the first surface 110A of the main copper foil 110 by electrolytic deposition, the distribution of the roughened particles can be affected by the underlying main copper foil. The influence of the surface topography of 110 makes the arrangement of the coarsened particles present an isotropic or anisotropic arrangement. For example, when the surface morphology of the first surface 110A of the main copper foil 110 exhibits anisotropic arrangement, the roughened particles correspondingly disposed on the surface can also exhibit anisotropic arrangement. According to an embodiment of the present disclosure, since the total thickness of the first passivation layer 116a, the first anti-rust layer 118a and the coupling layer 120 in the first surface treatment layer 112a is much smaller than the thickness of the roughened layer 114, the thickness of the copper foil 100 The surface topography of the treated surface 100A, such as the root mean square height (Sq) and the aspect ratio (Str) of the surface features, is mainly affected by the roughened layer 114 . In addition, the surface roughness of the treated surface 100A of the surface-treated copper foil 100 can be adjusted by adjusting the number and size of the roughened particles in the roughened layer 114 . For example, for the roughened particles and the coating layer formed by electrolytic deposition, the type and arrangement of the roughened particles can be adjusted by adjusting the type of additives, the concentration of additives and/or the current density in the electrolyte, but not limited to here.

前述鈍化層,例如第一鈍化層116a及第二鈍化層116b,可以是相同或不同組成,例如是金屬層或金屬合金層。其中,金屬層可以選自但不限於鎳、鋅、鉻、鈷、鉬、鐵、錫、及釩,例如是:鎳層、鎳鋅合金層、鋅層、鋅錫合金層或鉻層。此外,金屬層及金屬合金層可以是單層或多層結構,例如彼此堆疊的含鋅及含鎳的單層。當為多層結構時,各層間的堆疊順序可以依據需要而調整,並無一定限制,例如含鋅層疊置於含鎳層上,或含鎳層疊置於含鋅層上。根據本揭露一實施例,第一鈍化層116a為彼此堆疊的含鋅層及含鎳層的雙層結構,第二鈍化層116b為含鋅層的單層結構。The aforementioned passivation layers, such as the first passivation layer 116a and the second passivation layer 116b, may be of the same or different compositions, such as metal layers or metal alloy layers. Wherein, the metal layer can be selected from but not limited to nickel, zinc, chromium, cobalt, molybdenum, iron, tin, and vanadium, such as nickel layer, nickel-zinc alloy layer, zinc layer, zinc-tin alloy layer or chromium layer. In addition, the metal layer and the metal alloy layer may be a single-layer or multi-layer structure, such as zinc- and nickel-containing single layers stacked on each other. When it is a multi-layer structure, the stacking sequence between the layers can be adjusted according to needs, and there is no certain limitation, for example, the zinc-containing layer is placed on the nickel-containing layer, or the nickel-containing layer is placed on the zinc-containing layer. According to an embodiment of the present disclosure, the first passivation layer 116a is a double-layer structure of a zinc-containing layer and a nickel-containing layer stacked on each other, and the second passivation layer 116b is a single-layer structure of a zinc-containing layer.

前述防鏽層,例如第一防鏽層118a及第二防鏽層118b,係施加至金屬之披覆層,其可用於避免金屬受到腐蝕或氧化等而劣化。防鏽層包含金屬或有機化合物,但不限定於此。當防鏽層包含金屬時,金屬可以是鉻或鉻合金,而鉻合金可進一步包含選自鎳、鋅、鈷、鉬、釩及其組合中之一者。當防鏽層包含有機化合物時,可用於形成該有機防鏽層之有機分子的非限制性例示包括卟啉基、苯並三唑、三𠯤三硫醇及其組合,該卟啉基係由卟啉、卟啉大環、擴大卟啉、收縮卟啉、線性卟啉聚合物、卟啉夾層配位複合物、卟啉陣列、5,10,15,20-四(4-胺基苯基)-卟啉-鋅(II)及其組合所組成。根據本揭露一實施例,第一防鏽層118a及第二防鏽層118b皆採用鉻。The aforementioned anti-rust layers, such as the first anti-rust layer 118a and the second anti-rust layer 118b, are coating layers applied to the metal, which can be used to prevent the metal from being deteriorated by corrosion or oxidation. The rust preventive layer contains a metal or an organic compound, but is not limited thereto. When the rust preventive layer includes a metal, the metal may be chromium or a chromium alloy, and the chromium alloy may further include one selected from the group consisting of nickel, zinc, cobalt, molybdenum, vanadium, and combinations thereof. When the anti-rust layer comprises an organic compound, non-limiting examples of organic molecules that can be used to form the organic anti-rust layer include porphyrin groups, benzotriazoles, tris-trithiols, and combinations thereof, the porphyrin groups consisting of Porphyrins, porphyrin macrocycles, expanded porphyrins, contracted porphyrins, linear porphyrin polymers, porphyrin sandwich coordination complexes, porphyrin arrays, 5,10,15,20-tetrakis(4-aminophenyl) )-porphyrin-zinc(II) and combinations thereof. According to an embodiment of the present disclosure, both the first anti-rust layer 118a and the second anti-rust layer 118b are made of chromium.

耦合層120可以是由矽烷製成,可用於增進表面處理銅箔100與其他材料(例如基板膠片)間的附著性。耦合層120可選自但不限於3-胺丙基三甲氧基矽烷、3-胺丙基三乙氧基矽烷、N-2-(胺基乙基)-3-胺基丙基三甲氧基矽烷、縮水甘油氧基丙基三甲氧基矽烷、縮水甘油氧基丙基三乙氧基矽烷、8-縮水甘油氧基辛基三甲氧基矽烷、3-甲基丙烯醯氧基丙基三乙氧基矽烷、8-甲基丙烯醯氧基辛基三甲氧基矽烷、3-丙烯醯氧基丙基三甲氧基矽烷、3-巰基丙基三甲氧基矽烷、3-縮水甘油丙基三甲氧基矽烷、1-[3-(三甲氧基矽基)丙基]脲、(3-氯丙基)三甲氧基矽烷、二甲基二氯矽烷、3-(三甲氧基甲矽基)甲基丙烯酸丙酯、乙基三乙醯氧基矽烷、異丁基三乙氧基矽烷、正辛基三乙氧基矽烷、三(2-甲氧基乙氧基)乙烯基矽烷)、三甲基氯矽烷、甲基三氯矽烷、四氯化矽、四乙氧基矽烷、苯基三甲氧基矽烷、氯三乙氧基矽烷、乙烯-三甲氧基矽烷、具有1至20個碳原子的烷氧基矽烷、具有1至20個碳原子的乙烯基烷氧基矽烷、(甲基)醯基矽烷及其組合,但不限定於此。The coupling layer 120 can be made of silane, which can be used to improve the adhesion between the surface-treated copper foil 100 and other materials (eg, substrate films). The coupling layer 120 may be selected from, but not limited to, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, N-2-(aminoethyl)-3-aminopropyltrimethoxysilane Silane, Glycidoxypropyltrimethoxysilane, Glycidoxypropyltriethoxysilane, 8-Glycidyloxyoctyltrimethoxysilane, 3-Methacryloyloxypropyltriethyl oxysilane, 8-methacryloyloxyoctyltrimethoxysilane, 3-acryloyloxypropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-glycidylpropyltrimethoxysilane Silane, 1-[3-(trimethoxysilyl)propyl]urea, (3-chloropropyl)trimethoxysilane, dimethyldichlorosilane, 3-(trimethoxysilyl)methyl Propyl acrylate, ethyltriacetoxysilane, isobutyltriethoxysilane, n-octyltriethoxysilane, tris(2-methoxyethoxy)vinylsilane), trimethyl Chlorosilane, methyltrichlorosilane, silicon tetrachloride, tetraethoxysilane, phenyltrimethoxysilane, chlorotriethoxysilane, ethylene-trimethoxysilane, having 1 to 20 carbon atoms Alkoxysilanes, vinylalkoxysilanes having 1 to 20 carbon atoms, (methyl)acylsilanes, and combinations thereof, but not limited thereto.

前述表面處理銅箔100可再進一步加工,以製成銅箔基板(copper clad laminate, CCL)。銅箔基板至少包括載板和表面處理銅箔。表面處理銅箔設置於載板的至少一表面,且表面處理銅箔包括處理面。其中,表面處理銅箔的處理面可面向且直接接觸載板。The aforementioned surface-treated copper foil 100 can be further processed to form a copper clad laminate (CCL). The copper foil substrate at least includes a carrier plate and a surface-treated copper foil. The surface-treated copper foil is disposed on at least one surface of the carrier, and the surface-treated copper foil includes a treated surface. Wherein, the treated surface of the surface-treated copper foil may face and directly contact the carrier.

上述載板可採用電木板、高分子板、或玻璃纖維板,但並不限於此。所述高分子板的高分子成份可例舉如:環氧樹脂、酚醛樹脂、聚酯樹脂、聚醯亞胺樹脂、壓克力、甲醛樹脂、雙馬來醯亞胺三嗪樹脂、氰酸酯樹脂(cyanate ester resin)、含氟聚合物、聚醚碸、纖維素熱塑性塑料、聚碳酸酯、聚烯烴、聚丙烯、聚硫化物、聚氨酯、聚醯亞胺樹脂、液晶高分子(LCP)、聚氧二甲苯(PPO)。上述玻璃纖維板可以是玻璃纖維不織物料浸泡於前述高分子(如:環氧樹脂)後所形成的預浸漬材料(prepreg)。The above-mentioned carrier board may be a bakelite board, a polymer board, or a glass fiber board, but is not limited thereto. The polymer components of the polymer board can be, for example, epoxy resin, phenolic resin, polyester resin, polyimide resin, acrylic, formaldehyde resin, bismaleimide triazine resin, cyanic acid Cyanate resin (cyanate resin), fluoropolymer, polyether, cellulose thermoplastic, polycarbonate, polyolefin, polypropylene, polysulfide, polyurethane, polyimide resin, liquid crystal polymer (LCP) , Polyoxyxylene (PPO). The above-mentioned glass fiber board may be a prepreg formed by soaking the glass fiber non-woven material in the aforementioned polymer (eg, epoxy resin).

前述銅箔基板可再進一步加工製成印刷電路板,其步驟可包括將電解銅箔圖案化以製作導線、將導線施予黑化處理。其中,黑化製程係為化學浴處理製程且可包括至少一預處理(例如對於導線表面施予微蝕刻或清潔等)。The aforementioned copper foil substrate may be further processed into a printed circuit board, and the steps may include patterning the electrolytic copper foil to make wires, and applying blackening treatment to the wires. The blackening process is a chemical bath treatment process and may include at least one pretreatment (eg, micro-etching or cleaning the surface of the wires).

在下文中,係進一步針對表面處理銅箔以及銅箔基板的製作方法予以例示性地描述。製作方法中的各步驟分述如下:Hereinafter, the method for producing the surface-treated copper foil and the copper foil substrate will be further exemplarily described. The steps in the production method are described as follows:

(1)步驟A(1) Step A

施行步驟A,以提供主體銅箔,例如是電解銅箔。可以採用製箔機,以電解沉積(electrodeposition)的方式形成電解銅箔,或稱為生箔(bare copper foil)。具體而言,製箔機可至少包括做為陰極的輥筒、成對的不溶性的金屬陽極板、以及電解液入料管(inlet manifold)。其中,輥筒是可轉動的金屬輥筒,其表面係為鏡面拋光的表面。金屬陽極板可分離固設在輥筒的下半部,以包圍輥筒的下半部。入料管可固設在輥筒的正下方,且位於兩金屬陽極板之間。Step A is performed to provide a bulk copper foil, such as an electrolytic copper foil. Electrolytic copper foils, or bare copper foils, can be formed by means of electrodeposition using a foil maker. Specifically, the foil making machine may include at least a roller serving as a cathode, a pair of insoluble metal anode plates, and an electrolyte inlet manifold. Among them, the roller is a rotatable metal roller, and its surface is a mirror-polished surface. The metal anode plate can be separated and fixed on the lower half of the roller to surround the lower half of the roller. The feeding tube can be fixed directly under the roller and between the two metal anode plates.

在電解沉積過程中,電解液入料管會持續提供電解液至輥筒和金屬陽極板之間。藉由在輥筒和金屬陽極板之間施加電流或電壓,便可以使銅電解沉積在輥筒上,而形成主體銅箔。此外,藉由持續轉動輥筒,並使電解銅箔自輥筒的某一側被剝離,便可以製作連續不斷的主體銅箔。其中,主體銅箔面向輥筒的表面可稱作是輥筒面,而主體銅箔遠離輥筒的表面可稱作是沉積面。此外,在電解沉積的過程中,由於陰極輥筒的表面會被些許氧化,而產生不平坦之表面,進而降低了主體銅箔的輥筒面的平坦度。因此,可以進一步在陰極輥筒的相鄰處設置拋光輥筒(polish buff),使陰極輥筒和拋光輥筒之間具有接觸面。藉由讓陰極輥筒和拋光輥筒以相反的方向轉動,便可以使得陰極輥筒表面的氧化層被拋光輥筒去除,進而維持了陰極輥筒的表面平坦度。During the electrolytic deposition process, the electrolyte feed pipe will continuously supply the electrolyte between the roller and the metal anode plate. The bulk copper foil is formed by electrolytically depositing copper on the roll by applying an electric current or voltage between the roll and the metal anode plate. In addition, by continuously rotating the roll and peeling the electrolytic copper foil from one side of the roll, a continuous main body copper foil can be produced. Wherein, the surface of the main copper foil facing the roller can be referred to as the roller surface, and the surface of the main copper foil away from the roller can be referred to as the deposition surface. In addition, in the process of electrolytic deposition, the surface of the cathode roll is slightly oxidized, resulting in an uneven surface, which further reduces the flatness of the roll surface of the main copper foil. Therefore, a polishing buff can be further disposed adjacent to the cathode roll, so that there is a contact surface between the cathode roll and the polishing roll. By rotating the cathode roller and the polishing roller in opposite directions, the oxide layer on the surface of the cathode roller can be removed by the polishing roller, thereby maintaining the surface flatness of the cathode roller.

主體銅箔的製造參數範圍例示如下:The manufacturing parameter ranges for the main copper foil are exemplified as follows:

〈1.1生箔的電解液組成及電解條件〉<1.1 Electrolyte composition and electrolysis conditions of green foil>

硫酸銅(CuSO 4•5H 2O):320 g/L Copper sulfate (CuSO 4 •5H 2 O): 320 g/L

硫酸:95 g/LSulfuric acid: 95 g/L

氯離子(從鹽酸而來,RCI Labscan Ltd.):30 mg/L (ppm)Chloride (from hydrochloric acid, RCI Labscan Ltd.): 30 mg/L (ppm)

液溫:50℃Liquid temperature: 50℃

電流密度:70 A/dm 2 Current density: 70 A/dm 2

生箔厚度:35 μmGreen foil thickness: 35 μm

〈1.2陰極輥筒〉<1.2 Cathode Roller>

材質:鈦Material: Titanium

表面晶粒度數(grain size number):6、7、7.5、9Surface grain size number: 6, 7, 7.5, 9

〈1.3拋光輥筒〉<1.3 Polishing Roller>

型號(Nippon Tokushu Kento Co., Ltd):#500、#1000、#1500、#2000Models (Nippon Tokushu Kento Co., Ltd): #500, #1000, #1500, #2000

(2)步驟B(2) Step B

本步驟B係對上述主體銅箔施行表面清潔製程,以確保銅箔的表面不具有污染物(例如油污、氧化物),其製造參數範圍例示如下:This step B is to perform a surface cleaning process on the above-mentioned main copper foil to ensure that the surface of the copper foil does not have contaminants (such as oil stains, oxides), and the manufacturing parameter range is exemplified as follows:

〈2.1清洗液的組成及清潔條件〉<2.1 Composition and cleaning conditions of cleaning solution>

硫酸銅:200 g/LCopper sulfate: 200 g/L

硫酸:100 g/LSulfuric acid: 100 g/L

液溫:25℃Liquid temperature: 25℃

浸漬時間:5秒Immersion time: 5 seconds

(3)步驟C(3) Step C

本步驟C係於上述主體銅箔的輥筒面形成粗化層。舉例而言,可透過電解沉積,以將粗化粒子形成於主體銅箔的輥筒面。此外,為了避免粗化粒子掉落,可進一步於上述粗化粒子上形成覆蓋層。粗化層(包括粗化粒子及覆蓋層)之製造參數範圍例示如下:In this step C, a roughened layer is formed on the roll surface of the above-mentioned main copper foil. For example, the roughened particles can be formed on the roll surface of the main copper foil by electrolytic deposition. In addition, in order to prevent the roughened particles from falling, a coating layer may be further formed on the above-mentioned roughened particles. The manufacturing parameter ranges of the roughened layer (including the roughened particles and the cover layer) are exemplified as follows:

〈3.1製作粗化粒子的參數〉<3.1 Parameters for making coarse particles>

硫酸銅(CuSO 4•5H 2O):150 g/L Copper sulfate (CuSO 4 •5H 2 O): 150 g/L

硫酸:100 g/LSulfuric acid: 100 g/L

硫酸鈦(Ti(SO 4) 2):150~750 mg/L (ppm) Titanium sulfate (Ti(SO 4 ) 2 ): 150~750 mg/L (ppm)

鎢酸鈉(Na 2WO 4):50~450 mg/L (ppm) Sodium tungstate (Na 2 WO 4 ): 50~450 mg/L (ppm)

液溫:25℃Liquid temperature: 25℃

電流密度:40 A/dm 2 Current density: 40 A/dm 2

時間:10秒Time: 10 seconds

〈3.2製作覆蓋層的參數〉<3.2 Parameters for making overlays>

硫酸銅(CuSO 4˙5H 2O):220 g/L Copper sulfate (CuSO 4 ˙5H 2 O): 220 g/L

硫酸:100 g/LSulfuric acid: 100 g/L

液溫:40℃Liquid temperature: 40℃

電流密度:15 A/dm 2 Current density: 15 A/dm 2

時間:10秒Time: 10 seconds

(4)步驟D(4) Step D

本步驟D係於上述主體銅箔的各側形成鈍化層,例如是透過電解沉積製程,以在主體銅箔設有粗化層之側形成具有雙層堆疊結構的鈍化層(例如:含鎳層/含鋅層,但不限定於此),而在主體銅箔未設有粗化層之側形成具有單層結構的鈍化層(例如:含鋅層,但不限定於此)。製造參數範圍例示如下:This step D is to form a passivation layer on each side of the above-mentioned main copper foil, for example, through an electrolytic deposition process, to form a passivation layer with a double-layer stack structure (for example, a nickel-containing layer) on the side of the main copper foil with the roughened layer / Zinc-containing layer, but not limited to this), and a passivation layer (eg, zinc-containing layer, but not limited to this) with a single-layer structure is formed on the side of the main copper foil without the roughening layer. Examples of manufacturing parameter ranges are as follows:

〈4.1含鎳層的電解液組成及電解條件〉<4.1 Electrolyte composition and electrolysis conditions of nickel-containing layer>

硫酸鎳(NiSO 4•7H 2O):180 g/L Nickel sulfate (NiSO 4 •7H 2 O): 180 g/L

硼酸(H 3BO 3):30 g/L Boric acid (H 3 BO 3 ): 30 g/L

次磷酸鈉(NaH 2PO 2):3.6 g/L Sodium hypophosphite (NaH 2 PO 2 ): 3.6 g/L

液溫:20°CLiquid temperature: 20°C

電流密度:0.2 A/dm 2 Current density: 0.2 A/dm 2

時間:10秒Time: 10 seconds

〈4.2 含鋅層的電解液組成及電解條件〉<4.2 Electrolyte composition and electrolysis conditions of zinc-containing layer>

硫酸鋅(ZnSO 4•7H 2O):9 g/L Zinc sulfate (ZnSO 4 •7H 2 O): 9 g/L

釩酸銨((NH 4) 3VO 4):0.3 g/L Ammonium vanadate ((NH 4 ) 3 VO 4 ): 0.3 g/L

液溫:20°CLiquid temperature: 20°C

電流密度:0.2 A/dm 2 Current density: 0.2 A/dm 2

時間:10秒Time: 10 seconds

(5)步驟E(5) Step E

本步驟E係於上述主體銅箔的各側的鈍化層上形成防鏽層,例如含鉻層,其製造參數範圍例示如下:This step E is to form an anti-rust layer, such as a chromium-containing layer, on the passivation layer on each side of the above-mentioned main copper foil, and the manufacturing parameter range is exemplified as follows:

〈5.1 含鉻層的電解液組成及電解條件〉<5.1 Electrolyte Composition and Electrolysis Conditions of Chromium-Containing Layer>

三氧化鉻(CrO 3):5 g/L Chromium trioxide (CrO 3 ): 5 g/L

液溫:30°CLiquid temperature: 30°C

電流密度:5 A/dm 2 Current density: 5 A/dm 2

時間:10秒Time: 10 seconds

(6)步驟F(6) Step F

本步驟F係於上述主體銅箔設置粗化層、鈍化層、防鏽層的一側上形成耦合層。舉例而言,完成上述電解沉積製程後,用水洗滌銅箔,但不乾燥銅箔表面。之後將含有矽烷耦合劑的水溶液噴塗至銅箔設有粗化層之側的防鏽層上,使得矽烷耦合劑吸附於防鏽層的表面。之後,可以將銅箔放置於烘箱中予以乾燥。製造參數範圍例示如下:In this step F, a coupling layer is formed on the side of the main copper foil where the roughening layer, the passivation layer and the anti-rust layer are arranged. For example, after the above-mentioned electrolytic deposition process is completed, the copper foil is washed with water, but the surface of the copper foil is not dried. Then, the aqueous solution containing the silane coupling agent is sprayed on the anti-rust layer on the side of the copper foil with the roughened layer, so that the silane coupling agent is adsorbed on the surface of the anti-rust layer. After that, the copper foil can be placed in an oven to dry. Examples of manufacturing parameter ranges are as follows:

〈6.1矽烷耦合劑的參數〉<6.1 Parameters of silane coupling agent>

矽烷耦合劑:3-縮水甘油醚氧基丙基三甲氧基矽烷(3-glycidoxypropyl trimethoxysilane, KBM-403)Silane coupling agent: 3-glycidoxypropyl trimethoxysilane (KBM-403)

水溶液之矽烷耦合劑濃度:0.25 wt.%Silane coupling agent concentration in aqueous solution: 0.25 wt.%

噴塗時間:10秒Spray time: 10 seconds

(7)步驟G(7) Step G

本步驟G係將經由上述步驟而形成的表面處理銅箔(包括主體銅箔及設置於主體銅箔各側的表面處理層)壓合至載板,以形成銅箔基板。根據本揭露的一實施例,可藉由將第1圖所示的表面處理銅箔100熱壓至載板,而形成銅箔基板。In this step G, the surface-treated copper foil (including the main copper foil and the surface-treated layers disposed on each side of the main copper foil) formed through the above steps is pressed onto the carrier plate to form a copper foil substrate. According to an embodiment of the present disclosure, a copper foil substrate can be formed by hot pressing the surface-treated copper foil 100 shown in FIG. 1 to a carrier board.

為了使本技術領域具有通常知識者得據以實現本揭露,下文將進一步詳細描述本揭露之各具體實施例,以具體說明本揭露之表面處理銅箔及銅箔基板。需注意的是,以下實施例僅為例示性,不應以其限制性地解釋本揭露。亦即,在不逾越本揭露範疇之情況下,可適當地改變各實施例中所採用之材料、材料之用量及比率以及處理流程等。In order to enable those skilled in the art to implement the present disclosure, the specific embodiments of the present disclosure will be described in detail below to specifically describe the surface-treated copper foil and the copper foil substrate of the present disclosure. It should be noted that the following embodiments are only illustrative, and should not limit the present disclosure. That is, without departing from the scope of the present disclosure, the materials used in each embodiment, the amounts and ratios of materials, and the processing procedures can be appropriately changed.

實施例1~16Embodiments 1 to 16

實施例1~16係為表面處理銅箔,其製造程序包括上述製作方法中的步驟A至步驟F。實施例1~16與上述製作方法之間相異的製造參數,係記載於表1中。其中,針對實施例1~16的表面處理銅箔,係採用如第1圖所示之結構,其粗化層上依序形成含鎳層、含鋅層、含鉻層及耦合層,且在主體銅箔未設有粗化層的一側上依序形成含鋅層、含鉻層。表面處理銅箔的厚度為35µm。Examples 1 to 16 are surface-treated copper foils, and the manufacturing process includes steps A to F in the above-mentioned manufacturing method. The different manufacturing parameters between Examples 1 to 16 and the above-mentioned manufacturing method are described in Table 1. Among them, for the surface-treated copper foils of Examples 1 to 16, the structure shown in Figure 1 is adopted, and the nickel-containing layer, the zinc-containing layer, the chromium-containing layer and the coupling layer are sequentially formed on the roughened layer, and the A zinc-containing layer and a chromium-containing layer are sequentially formed on the side of the main copper foil on which the roughening layer is not provided. The thickness of the surface-treated copper foil is 35µm.

表1   拋光輥筒 陰極輥筒 粗化層 型號 (#) 表面晶粒度數 Ti(SO 4) 2(ppm) Na 2WO 4(ppm) 電流密度 (ASD) 實施例1 1500 7.5 450 250 40 實施例2 1000 7.5 450 250 40 實施例3 2000 7.5 450 250 40 實施例4 1500 7 450 250 40 實施例5 1500 9 450 250 40 實施例6 1500 7.5 300 250 40 實施例7 1500 7.5 600 250 40 實施例8 1500 7.5 450 150 40 實施例9 1500 7.5 450 350 40 實施例10 500 7.5 450 250 40 實施例11 2500 7.5 450 250 40 實施例12 1500 6 450 250 40 實施例13 1500 7.5 150 250 40 實施例14 1500 7.5 750 250 40 實施例15 1500 7.5 450 50 40 實施例16 1500 7.5 450 450 40 Table 1 polishing roller Cathode Roller coarse layer model(#) Surface grain size number Ti(SO 4 ) 2 (ppm) Na 2 WO 4 (ppm) Current Density (ASD) Example 1 1500 7.5 450 250 40 Example 2 1000 7.5 450 250 40 Example 3 2000 7.5 450 250 40 Example 4 1500 7 450 250 40 Example 5 1500 9 450 250 40 Example 6 1500 7.5 300 250 40 Example 7 1500 7.5 600 250 40 Example 8 1500 7.5 450 150 40 Example 9 1500 7.5 450 350 40 Example 10 500 7.5 450 250 40 Example 11 2500 7.5 450 250 40 Example 12 1500 6 450 250 40 Example 13 1500 7.5 150 250 40 Example 14 1500 7.5 750 250 40 Example 15 1500 7.5 450 50 40 Example 16 1500 7.5 450 450 40

以下進一步描述上述各實施例1~16的表面處理銅箔及相應銅箔基板的各項檢測結果,例如:〈均方根高度(Sq)〉、〈表面性狀長寬比(Str)〉、〈結晶面比例〉、〈剝離強度〉、〈信賴性〉、及〈訊號傳遞損失〉。各項檢測結果係記載於表2中。The following is a further description of the test results of the surface-treated copper foils and the corresponding copper foil substrates of the above-mentioned embodiments 1-16, such as: <root mean square height (Sq)>, <surface feature aspect ratio (Str)>, < Crystal face ratio>, <peel strength>, <reliability>, and <signal transmission loss>. Various test results are recorded in Table 2.

〈均方根高度(Sq)〉及〈表面性狀長寬比(Str)〉<Root mean square height (Sq)> and <Aspect ratio of surface properties (Str)>

根據標準ISO 25178-2:2012,以雷射顯微鏡(LEXT OLS5000-SAF, Olympus)的表面紋理分析,測量表面處理銅箔的處理面的均方根高度(Sdq)及表面性狀長寬比(Str)。具體量測條件如下:According to the standard ISO 25178-2:2012, the surface texture analysis of the laser microscope (LEXT OLS5000-SAF, Olympus) was used to measure the root mean square height (Sdq) and the aspect ratio (Str ). The specific measurement conditions are as follows:

光源波長:405 nmLight source wavelength: 405 nm

物鏡倍率:100倍物鏡(MPLAPON-100x LEXT, Olympus)Objective magnification: 100x objective (MPLAPON-100x LEXT, Olympus)

光學變焦:1.0倍Optical zoom: 1.0x

觀察面積:129 μm × 129 μmObservation area: 129 μm × 129 μm

解析度:1024畫素×1024畫素Resolution: 1024 pixels × 1024 pixels

條件:啟用雷射顯微鏡的自動傾斜消除功能(Auto tilt removal)Condition: Auto tilt removal of the laser microscope is enabled (Auto tilt removal)

濾鏡:無濾鏡(unfiltered)Filter: unfiltered (unfiltered)

空氣溫度:24±3℃Air temperature: 24±3℃

相對濕度:63±3%Relative humidity: 63±3%

〈結晶面比例〉<Crystal face ratio>

將烘箱溫度設定為200℃。待烘箱溫度至200℃時,將上述任一實施例的表面處理銅箔置入烘箱,以對表面處理銅箔進行熱處理。待熱處理1小時後,將表面處理銅箔自烘箱取出,並放置於室溫環境。繼以對表面處理銅箔的處理面(即設置有粗化層、鈍化層、防鏽層、及耦合層的一側)進行低掠角X光繞射分析(grazing incidence X-ray diffraction, GIXRD),以判別表面處理銅箔鄰近於處理面的晶面繞射峰積分強度,例如是主體銅箔的輥筒面及距離此輥筒面一定深度內的銅(111)晶面、銅(200)晶面及銅(220)晶面的繞射峰積分強度。具體量測條件如下:The oven temperature was set to 200°C. When the temperature of the oven reaches 200° C., the surface-treated copper foil of any of the above embodiments is placed in an oven to perform heat treatment on the surface-treated copper foil. After 1 hour of heat treatment, the surface-treated copper foil was taken out from the oven and placed at room temperature. Then, low grazing incidence X-ray diffraction (GIXRD) was performed on the treated surface of the surface-treated copper foil (that is, the side provided with the roughening layer, passivation layer, anti-rust layer, and coupling layer). ) to determine the integrated intensity of the crystal plane diffraction peak of the surface-treated copper foil adjacent to the treated surface, such as the roller surface of the main copper foil and the copper (111) crystal plane, copper (200) crystal plane within a certain depth from the roller surface of the main copper foil ) crystal plane and the diffraction peak integrated intensity of the copper (220) crystal plane. The specific measurement conditions are as follows:

量測儀器:X光繞射分析儀(D8 ADVANCE Eco, Bruker Co.)Measuring instrument: X-ray diffraction analyzer (D8 ADVANCE Eco, Bruker Co.)

掠射角角度:0.8∘。Grazing angle: 0.8∘.

〈剝離強度〉<Peel Strength>

將6片厚度各自為0.09 mm的市售樹脂片(S7439G, Shengyi Technology Co.)堆疊一起,以形成樹脂片堆疊層,並將上述任一實施例的表面處理銅箔(尺寸:125 mm × 25 mm)的處理面朝向樹脂片堆疊層進行設置,接著將兩者壓合,以形成銅箔基板。壓合條件如下:Six commercially available resin sheets (S7439G, Shengyi Technology Co.) each having a thickness of 0.09 mm were stacked together to form a resin sheet stack, and the surface-treated copper foils (dimensions: 125 mm × 25 mm) to face the resin sheet stack layer, and then press the two to form a copper foil substrate. The pressing conditions are as follows:

溫度:200°CTemperature: 200°C

壓力:400 psiPressure: 400 psi

壓合時間:120分鐘Lamination time: 120 minutes

之後,根據標準JIS C 6471,使用萬能試驗機,以將表面處理銅箔以90°的角度自銅箔基板剝離。剝離條件如下:After that, according to standard JIS C 6471, a universal testing machine was used to peel the surface-treated copper foil from the copper foil substrate at an angle of 90°. The peeling conditions are as follows:

剝離儀器:島津AG-I萬能拉力機Stripping equipment: Shimadzu AG-I universal tensile machine

剝離角度:90∘Peeling angle: 90∘

評估標準:剝離強度需高於4 lb/inEvaluation Criteria: Peel strength needs to be greater than 4 lb/in

〈信賴性〉<Reliability>

將6片厚度各自為0.076 mm的市售樹脂片(S7439G, SyTech Corp.)堆疊一起,以形成樹脂片堆疊層,並將上述任一實施例的表面處理銅箔的處理面朝向樹脂片堆疊層進行設置,接著將兩者壓合,以形成銅箔基板。壓合條件如下:溫度200°C、壓力400 psi、及壓合時間120分鐘。Six commercially available resin sheets (S7439G, SyTech Corp.) each having a thickness of 0.076 mm were stacked together to form a resin sheet stack, and the treated surface of the surface-treated copper foil of any of the above-mentioned embodiments was oriented toward the resin sheet stack. Set up, and then press the two together to form a copper foil substrate. The pressing conditions were as follows: temperature 200°C, pressure 400 psi, and pressing time 120 minutes.

之後,施行壓力鍋測試(pressure cooker test, PCT),將烘箱內的條件設定為溫度121°C、壓力2 atm、及濕度100% RH,並將上述銅箔基板放置於烘箱30分鐘後,取出冷卻至室溫。繼以施行焊料浴測試(solder bath test),將經由壓力鍋測試處理後的銅箔基板浸泡於溫度為288°C的熔融焊料浴10秒。After that, a pressure cooker test (PCT) was performed, and the conditions in the oven were set to a temperature of 121°C, a pressure of 2 atm, and a humidity of 100% RH, and the copper foil substrate was placed in the oven for 30 minutes, and then taken out and cooled. to room temperature. Following the solder bath test, the copper foil substrate processed by the pressure cooker test was immersed in a molten solder bath with a temperature of 288° C. for 10 seconds.

可以對同一樣品反覆施行焊料浴測試,並在每次焊料浴測試完成後,觀察銅箔基板是否有起泡(blister)、裂痕(crack)、或分層(delamination)等異常的現象,若出現上述任何一種異常現象,即判定該銅箔基板未能通過該次焊料浴測試。檢測結果係記載於表2中。評價標準如下:The solder bath test can be performed repeatedly on the same sample, and after each solder bath test is completed, observe whether the copper foil substrate has abnormal phenomena such as blister, crack, or delamination. Any of the above abnormal phenomena means that the copper foil substrate fails to pass the solder bath test. The test results are described in Table 2. The evaluation criteria are as follows:

A:經過多於50次的焊料浴測試,銅箔基板仍未產生異常現象A: After more than 50 solder bath tests, the copper foil substrate still has no abnormality

B:經過10~50次的焊料浴測試,銅箔基板即產生異常現象B: After 10~50 times of solder bath test, the copper foil substrate is abnormal

C:經過少於10次的焊料浴測試,銅箔基板即產生異常現象C: After less than 10 solder bath tests, the copper foil substrate is abnormal

〈訊號傳遞損失〉<Signal transmission loss>

將上述任一實施例的表面處理銅箔製作成例如第2圖所示的帶狀線(stripline),並測量其相應的訊號傳遞損失。其中,關於帶狀線300的製備方式,係先於152.4μm的樹脂(S7439G, Shengyi Technology Co.)上先貼合上述任一實施例的表面處理銅箔,而後將表面處理銅箔製作成導線302,再使用另外兩片樹脂(S7439G, Shengyi Technology Co.)分別覆蓋兩側表面,使導線302被設置於介電體304(S7439G, Shengyi Technology Co.)之中。帶狀線300另可包括兩接地電極306-1和接地電極306-2,分別設置於介電體304的相對兩側。接地電極306-1和接地電極306-2彼此間可以透過導電通孔而彼此電連接,而使得接地電極306-1和接地電極306-2具有等電位。帶狀線300中的各部件的規格如下:The surface-treated copper foil of any of the above-mentioned embodiments is fabricated into a stripline as shown in Fig. 2, and its corresponding signal transmission loss is measured. Among them, regarding the preparation method of the strip line 300, the surface-treated copper foil of any of the above-mentioned embodiments is first pasted on the resin (S7439G, Shengyi Technology Co.) of 152.4 μm, and then the surface-treated copper foil is made into a wire 302, and then use another two sheets of resin (S7439G, Shengyi Technology Co.) to cover the surfaces on both sides respectively, so that the wires 302 are arranged in the dielectric body 304 (S7439G, Shengyi Technology Co.). The strip line 300 may further include two ground electrodes 306-1 and two ground electrodes 306-2, which are disposed on opposite sides of the dielectric body 304, respectively. The ground electrode 306-1 and the ground electrode 306-2 can be electrically connected to each other through conductive vias, so that the ground electrode 306-1 and the ground electrode 306-2 have the same potential. The specifications of the components in stripline 300 are as follows:

導線302的長度:100 mmLength of wire 302: 100 mm

導線寬度w:120 μmWire width w: 120 μm

導線厚度t:35 μmWire thickness t: 35 μm

介電體304的介電特性:Dk=3.74、Df=0.006(依據IPC-TM 650 No. 2.5.5.5,以10 GHz訊號量測)Dielectric characteristics of dielectric body 304: Dk=3.74, Df=0.006 (according to IPC-TM 650 No. 2.5.5.5, measured with 10 GHz signal)

特徵阻抗:50ΩCharacteristic impedance: 50Ω

狀態:無覆蓋膜Status: No cover film

在量測訊號傳遞損失時,係根據標準Cisco S3方法,利用訊號分析儀在接地電極306-1、306-2均為接地電位的情況下,將電訊號由導線302的某一端輸入,並量測導線302的另一端的輸出值,以判別帶狀線300所產生的訊號傳遞損失。具體量測條件如下:When measuring the signal transmission loss, according to the standard Cisco S3 method, the signal analyzer is used to input the electrical signal from one end of the wire 302 under the condition that the ground electrodes 306-1 and 306-2 are both ground potential, and measure the The output value of the other end of the lead wire 302 is measured to determine the signal transmission loss caused by the strip line 300 . The specific measurement conditions are as follows:

訊號分析儀:PNA N5227B (Keysight Technologies)Signal Analyzer: PNA N5227B (Keysight Technologies)

電訊號頻率:10 MHz至20 GHzElectrical signal frequency: 10 MHz to 20 GHz

掃描點數:2000點Scan points: 2000 points

校正方式:E-Cal (cal kit:N4692D)Calibration method: E-Cal (cal kit: N4692D)

以電訊號頻率為10GHz的情況,評價相應帶狀線的訊號傳遞損失的程度。其中,當訊號傳遞損失的絕對值愈小,代表訊號在傳遞時的損失程度越少。評價標準如下:When the frequency of the electrical signal is 10 GHz, the degree of signal transmission loss of the corresponding stripline is evaluated. Among them, when the absolute value of the signal transmission loss is smaller, it means that the loss of the signal is less during transmission. The evaluation criteria are as follows:

A(代表訊號傳遞表現最佳):訊號傳遞損失的絕對值小於0.80 dB/inA (representing the best signal transmission performance): the absolute value of the signal transmission loss is less than 0.80 dB/in

B(代表訊號傳遞表現良好):訊號傳遞損失的絕對值介於0.80 dB/in至0.85 dB/inB (representing good signal transmission): The absolute value of signal transmission loss is between 0.80 dB/in and 0.85 dB/in

C(代表訊號傳遞表現最差):訊號傳遞損失的絕對值大於0.85 dB/inC (representing the worst signal transmission performance): the absolute value of the signal transmission loss is greater than 0.85 dB/in

表2   表面處理銅箔的處理面 剝離強度 (lb/in) 信賴性 訊號傳遞損失 Sq (μm) Str 繞射峰積分強度 (%) (111) (200) (220) 實施例1 0.64 0.19 68.6 19.3 12.1 5.11 A B 實施例2 0.71 0.29 74.1 18.7 7.2 5.41 A B 實施例3 0.60 0.38 88.0 9.4 2.6 4.94 A A 實施例4 0.66 0.31 61.8 23.1 15.1 5.24 A B 實施例5 0.65 0.13 89.8 7.8 2.4 4.51 A A 實施例6 0.15 0.20 75.5 20.2 4.3 5.42 A A 實施例7 0.21 0.24 70.9 19.5 9.6 4.06 B B 實施例8 1.44 0.12 74.2 17.9 7.9 5.90 A B 實施例9 0.32 0.21 83.8 12.3 3.9 4.39 B A 實施例10 1.25 0.21 51.3 16.4 32.4 5.73 A C 實施例11 0.83 0.84 66.2 15.9 17.9 5.17 C C 實施例12 0.96 0.68 48.4 20.6 31.0 5.67 C C 實施例13 1.80 0.29 64.1 19.4 16.5 5.30 A C 實施例14 0.17 0.62 71.6 21.5 6.9 2.15 C B 實施例15 1.65 0.23 57.2 19.5 23.3 5.69 A C 實施例16 0.19 0.65 72.7 17.8 9.5 2.84 C B Table 2 Surface treated copper foil treated surface Peel Strength (lb/in) reliability signal transmission loss Sq (μm) Str Diffraction peak integral intensity (%) (111) (200) (220) Example 1 0.64 0.19 68.6 19.3 12.1 5.11 A B Example 2 0.71 0.29 74.1 18.7 7.2 5.41 A B Example 3 0.60 0.38 88.0 9.4 2.6 4.94 A A Example 4 0.66 0.31 61.8 23.1 15.1 5.24 A B Example 5 0.65 0.13 89.8 7.8 2.4 4.51 A A Example 6 0.15 0.20 75.5 20.2 4.3 5.42 A A Example 7 0.21 0.24 70.9 19.5 9.6 4.06 B B Example 8 1.44 0.12 74.2 17.9 7.9 5.90 A B Example 9 0.32 0.21 83.8 12.3 3.9 4.39 B A Example 10 1.25 0.21 51.3 16.4 32.4 5.73 A C Example 11 0.83 0.84 66.2 15.9 17.9 5.17 C C Example 12 0.96 0.68 48.4 20.6 31.0 5.67 C C Example 13 1.80 0.29 64.1 19.4 16.5 5.30 A C Example 14 0.17 0.62 71.6 21.5 6.9 2.15 C B Example 15 1.65 0.23 57.2 19.5 23.3 5.69 A C Example 16 0.19 0.65 72.7 17.8 9.5 2.84 C B

根據表2,針對實施例1~9,當表面處理銅箔的處理面的均方根高度(Sq)為0.20至1.50μm,處理面的表面性狀長寬比(Str)為0.65以下(例如為0.10至0.65),且表面處理銅箔在經由熱處理後,處理面的銅(111)晶面的繞射峰積分強度和銅(111)晶面、銅(200)晶面及銅(220)晶面的繞射峰積分強度的總和的比值至少為60%(例如為60%至90%)時,其對應的剝離強度均高於4.06lb/in、信賴性均為A等級或B等級、且訊號傳遞損失均為A等級或B等級。相較之下,針對實施例10~16,當均方根高度(Sq)、表面性狀長寬比(Str)、或繞射峰積分強度的比值中的其中任一者未落入上述範圍時,即便特定的實施例(例如:實施例10~13、15)的剝離強度仍高於4.06lb/in,然而其對應的信賴性或訊號傳遞損失的其中至少一者則會落入C等級。According to Table 2, for Examples 1 to 9, when the root mean square height (Sq) of the treated surface of the surface-treated copper foil is 0.20 to 1.50 μm, the aspect ratio (Str) of the surface properties of the treated surface is 0.65 or less (for example, 0.10 to 0.65), and the surface-treated copper foil after heat treatment, the integrated intensity of diffraction peaks of the copper (111) crystal plane of the treated surface and the copper (111) crystal plane, copper (200) crystal plane and copper (220) crystal plane When the ratio of the sum of the integrated intensities of the diffraction peaks is at least 60% (for example, 60% to 90%), the corresponding peel strengths are all higher than 4.06lb/in, the reliability is A grade or B grade, and the signal Transmission losses are either A grade or B grade. In contrast, for Examples 10 to 16, when any one of the root mean square height (Sq), the aspect ratio of the surface feature (Str), or the ratio of the diffraction peak integral intensity does not fall within the above range , even though the peel strengths of specific examples (eg, examples 10-13, 15) are still higher than 4.06 lb/in, at least one of the corresponding reliability or signal transmission loss falls into the C grade.

另外,針對實施例1~9,當表面處理銅箔在經由熱處理後,處理面的銅(220)晶面的繞射峰積分強度和銅(111)晶面、銅(200)晶面及銅(220)晶面的繞射峰積分強度的總和的比值小於16.50%時,則其對應的剝離強度均高於4.06lb/in、信賴性均為A等級或B等級、且訊號傳遞損失均為A等級或B等級。In addition, for Examples 1 to 9, when the surface-treated copper foil was subjected to heat treatment, the integrated intensity of diffraction peaks of the copper (220) crystal plane of the treated surface, the copper (111) crystal plane, the copper (200) crystal plane and the copper ( 220) When the ratio of the sum of the integrated intensities of the diffraction peaks of the crystal plane is less than 16.50%, the corresponding peel strengths are all higher than 4.06lb/in, the reliability is A grade or B grade, and the signal transmission loss is A grade or B grade.

根據本揭露的各實施例,藉由控制表面處理銅箔的處理面的表面形貌,以及控制主體銅箔鄰近輥筒面的各晶面比例,則對於相應的銅箔基板和印刷電路板而言,除了可以提昇表面處理銅箔和載板間的附著性及信賴性,亦可以同時降低高頻電訊號在印刷電路板中傳遞時所產生的訊號傳遞損失。 以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。 According to various embodiments of the present disclosure, by controlling the surface topography of the treated surface of the surface-treated copper foil and controlling the proportions of the crystal planes of the main copper foil adjacent to the roller surface, the corresponding copper foil substrates and printed circuit boards are In other words, in addition to improving the adhesion and reliability between the surface-treated copper foil and the carrier, it can also reduce the signal transmission loss caused by the transmission of high-frequency electrical signals in the printed circuit board. The above descriptions are only preferred embodiments of the present invention, and all equivalent changes and modifications made according to the scope of the patent application of the present invention shall fall within the scope of the present invention.

100:表面處理銅箔 100A:處理面 110:主體銅箔 110A:第一面 110B:第二面 112a:第一表面處理層 112b:第二表面處理層 114:粗化層 116a:第一鈍化層 116b:第二鈍化層 118a:第一防鏽層 118b:第二防鏽層 120:耦合層 300:帶狀線 302:導線 304:介電體 306-1:接地電極 306-2:接地電極 h:厚度 t:厚度 w:寬度100: Surface treated copper foil 100A: Processing side 110: Main body copper foil 110A: first side 110B: Second side 112a: first surface treatment layer 112b: Second surface treatment layer 114: Coarse layer 116a: first passivation layer 116b: second passivation layer 118a: first anti-rust layer 118b: Second anti-rust layer 120: Coupling Layer 300: Stripline 302: Wire 304: Dielectric 306-1: Ground electrode 306-2: Ground electrode h: thickness t: thickness w: width

第1圖是根據本揭露一實施例所繪示的表面處理銅箔的剖面示意圖。 第2圖是根據本揭露一實施例所繪示的帶狀線(stripline)的示意圖。 FIG. 1 is a schematic cross-sectional view of a surface-treated copper foil according to an embodiment of the present disclosure. FIG. 2 is a schematic diagram of a stripline according to an embodiment of the present disclosure.

100:表面處理銅箔 100: Surface treated copper foil

100A:處理面 100A: Processing side

110:主體銅箔 110: Main body copper foil

110A:第一面 110A: first side

110B:第二面 110B: Second side

112a:第一表面處理層 112a: first surface treatment layer

112b:第二表面處理層 112b: Second surface treatment layer

114:粗化層 114: Coarse layer

116a:第一鈍化層 116a: first passivation layer

116b:第二鈍化層 116b: second passivation layer

118a:第一防鏽層 118a: first anti-rust layer

118b:第二防鏽層 118b: Second anti-rust layer

120:耦合層 120: Coupling Layer

Claims (11)

一種表面處理銅箔,包括一處理面,其中該處理面的均方根高度(Sq)為0.20至1.50μm,該處理面的表面性狀長寬比(Str)為0.65以下,其中當該表面處理銅箔在200°C的環境中加熱1小時後,該處理面的(111)晶面的繞射峰積分強度和(111)晶面、(200)晶面及(220)晶面的繞射峰積分強度的總和的比值至少為60%。A surface-treated copper foil, comprising a treated surface, wherein the root mean square height (Sq) of the treated surface is 0.20 to 1.50 μm, and the aspect ratio (Str) of the surface properties of the treated surface is 0.65 or less, wherein when the surface treated After the copper foil was heated at 200°C for 1 hour, the integrated intensity of the diffraction peak of the (111) crystal plane of the treated surface and the diffraction of the (111) crystal plane, (200) crystal plane and (220) crystal plane The ratio of the sum of the peak integrated intensities is at least 60%. 如請求項1所述的表面處理銅箔,其中該處理面的表面性狀長寬比(Str)為0.10至0.65。The surface-treated copper foil according to claim 1, wherein the surface property aspect ratio (Str) of the treated surface is 0.10 to 0.65. 如請求項1所述的表面處理銅箔,其中該處理面的(111)晶面的繞射峰積分強度和(111)晶面、(200)晶面及(220)晶面的繞射峰積分強度的總和的比值為60%至90%。The surface-treated copper foil according to claim 1, wherein the integrated intensity of the diffraction peaks of the (111) crystal plane of the treated surface and the diffraction peaks of the (111) crystal plane, the (200) crystal plane and the (220) crystal plane The ratio of the sum of the integrated intensities is 60% to 90%. 如請求項1所述的表面處理銅箔,其中該處理面的(111)晶面、(200)晶面及(220)晶面的繞射峰積分強度係藉由低掠角X光繞射法而得,且該低掠角X光繞射法的掠射角為
Figure 03_image001
Figure 03_image003
The surface-treated copper foil according to claim 1, wherein the diffraction peak integral intensities of the (111) crystal plane, the (200) crystal plane and the (220) crystal plane of the treated surface are obtained by X-ray diffraction at a low grazing angle method, and the grazing angle of the low-grazing-angle X-ray diffraction method is
Figure 03_image001
to
Figure 03_image003
.
如請求項1所述的表面處理銅箔,其中當該表面處理銅箔在200°C的環境中加熱1小時後,該處理面的(220)晶面的繞射峰積分強度和(111)晶面、(200)晶面及(220)晶面的繞射峰積分強度的總和的比值小於16.50%,且該表面處理銅箔的訊號傳遞損失的絕對值小於或等於0.85dB/in。The surface-treated copper foil according to claim 1, wherein when the surface-treated copper foil is heated in an environment of 200° C. for 1 hour, the diffraction peak integral intensity of the (220) crystal plane of the treated surface and the (111) The ratio of the sum of the diffraction peak integral intensities of the crystal plane, the (200) crystal plane and the (220) crystal plane is less than 16.50%, and the absolute value of the signal transmission loss of the surface-treated copper foil is less than or equal to 0.85dB/in. 如請求項1至5中任一項所述的表面處理銅箔,進一步包括: 一主體銅箔;以及 一表面處理層,設置於該主體銅箔的至少一表面,其中該表面處理層的最外側係為該處理面。 The surface-treated copper foil according to any one of claims 1 to 5, further comprising: a main body copper foil; and A surface treatment layer is disposed on at least one surface of the main copper foil, wherein the outermost side of the surface treatment layer is the treatment surface. 如請求項6所述的表面處理銅箔,其中該主體銅箔為電解銅箔,該表面處理層包括一子層,該子層為粗化層。The surface-treated copper foil according to claim 6, wherein the main copper foil is an electrolytic copper foil, the surface-treated layer includes a sub-layer, and the sub-layer is a roughened layer. 如請求項7所述的表面處理銅箔,其中該表面處理層還進一步包括至少一其他的子層,該至少一其他的子層係選自由鈍化層及耦合層所構成之群組。The surface-treated copper foil of claim 7, wherein the surface-treated layer further comprises at least one other sublayer, and the at least one other sublayer is selected from the group consisting of a passivation layer and a coupling layer. 如請求項8所述的表面處理銅箔,其中該鈍化層包括至少一金屬,該金屬係選自由鎳、鋅、鉻、鈷、鉬、鐵、錫、及釩所構成之群組。The surface-treated copper foil of claim 8, wherein the passivation layer comprises at least one metal selected from the group consisting of nickel, zinc, chromium, cobalt, molybdenum, iron, tin, and vanadium. 一種銅箔基板,包括: 一載板;以及 一表面處理銅箔,設置於該載板的至少一表面,其中該表面處理銅箔包括: 一主體銅箔;以及 一表面處理層,設置在該主體銅箔和該載板之間,其中該表面處理層包括面向該載板的一處理面,該處理面的均方根高度(Sq)為0.20至1.50μm,該處理面的表面性狀長寬比(Str)為0.65以下,其中,該處理面的(111)晶面的繞射峰積分強度和(111)晶面、(200)晶面及(220)晶面的繞射峰積分強度的總和的比值至少為60%。 A copper foil substrate, comprising: a carrier board; and A surface-treated copper foil is disposed on at least one surface of the carrier, wherein the surface-treated copper foil includes: a main body copper foil; and a surface treatment layer disposed between the main copper foil and the carrier, wherein the surface treatment layer includes a treatment surface facing the carrier, and the root mean square height (Sq) of the treatment surface is 0.20 to 1.50 μm, The aspect ratio (Str) of the surface properties of the treated surface is 0.65 or less, wherein the integrated intensity of diffraction peaks of the (111) crystal plane and the (111) crystal plane, (200) crystal plane and (220) crystal plane of the treated surface are The ratio of the sum of the integrated intensities of the diffraction peaks of the facets shall be at least 60%. 如請求項10所述的銅箔基板,其中該表面處理層的該處理面係直接接觸該載板。The copper foil substrate of claim 10, wherein the treatment surface of the surface treatment layer directly contacts the carrier board.
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