TW201241879A - Device and method for plasma-assisted processing at least two substrates - Google Patents

Device and method for plasma-assisted processing at least two substrates Download PDF

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Publication number
TW201241879A
TW201241879A TW101107437A TW101107437A TW201241879A TW 201241879 A TW201241879 A TW 201241879A TW 101107437 A TW101107437 A TW 101107437A TW 101107437 A TW101107437 A TW 101107437A TW 201241879 A TW201241879 A TW 201241879A
Authority
TW
Taiwan
Prior art keywords
substrate
plasma
substrates
coil
vacuum chamber
Prior art date
Application number
TW101107437A
Other languages
English (en)
Chinese (zh)
Inventor
Florian Schwarz
Peter Rettenbacher
Thomas Merz
Andreas Rack
Mathias Hoefler
Original Assignee
Manz Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Manz Ag filed Critical Manz Ag
Publication of TW201241879A publication Critical patent/TW201241879A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/32779—Continuous moving of batches of workpieces

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
TW101107437A 2011-03-09 2012-03-06 Device and method for plasma-assisted processing at least two substrates TW201241879A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE201110013467 DE102011013467A1 (de) 2011-03-09 2011-03-09 Vorrichtung und Verfahren zum plasmaunterstützten Behandeln zumindest zweier Substrate

Publications (1)

Publication Number Publication Date
TW201241879A true TW201241879A (en) 2012-10-16

Family

ID=45976889

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101107437A TW201241879A (en) 2011-03-09 2012-03-06 Device and method for plasma-assisted processing at least two substrates

Country Status (3)

Country Link
DE (1) DE102011013467A1 (de)
TW (1) TW201241879A (de)
WO (1) WO2012119700A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI649285B (zh) * 2016-06-07 2019-02-01 全鴻精研股份有限公司 水平式玻璃蝕刻的方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014011933A1 (de) 2014-08-14 2016-02-18 Manz Ag Plasmabehandlungsvorrichtung und Verfahren zur Oberflächenbehandlung von Substraten
DE102015003379A1 (de) 2015-03-17 2016-09-22 Manz Ag Plasmaerzeugungsvorrichtung mit einer Induktionsspule
WO2023174571A1 (de) * 2022-03-17 2023-09-21 Ccr Gmbh, Beschichtungstechnologie Verfahren und anlage zur plasmabeschichtung

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD153497A3 (de) * 1980-02-08 1982-01-13 Georg Rudakoff Verfahren und vorrichtung zum plasmaaetzen oder zur plasma cvd
JPH03173124A (ja) 1989-11-30 1991-07-26 Shimadzu Corp プラズマ気相成長装置
US5309063A (en) * 1993-03-04 1994-05-03 David Sarnoff Research Center, Inc. Inductive coil for inductively coupled plasma production apparatus
JP2000353690A (ja) * 1999-06-11 2000-12-19 Sharp Corp プラズマリアクタ装置
EP1182685A1 (de) * 2000-08-09 2002-02-27 Toyo Technologies, Inc. Plasmapoliergerät mit streifendem Ionenbeschusswinkel
JP4120546B2 (ja) * 2002-10-04 2008-07-16 株式会社Ｉｈｉ 薄膜形成方法及び装置並びに太陽電池の製造方法及び装置並びに太陽電池
JP3980539B2 (ja) * 2003-08-29 2007-09-26 唯知 須賀 基板接合方法、照射方法、および基板接合装置
JP2007150012A (ja) * 2005-11-29 2007-06-14 Matsushita Electric Ind Co Ltd プラズマ処理装置および方法
US7972471B2 (en) * 2007-06-29 2011-07-05 Lam Research Corporation Inductively coupled dual zone processing chamber with single planar antenna
EP2360716A1 (de) * 2008-11-20 2011-08-24 Evatech Co., Ltd. Plasmaverarbeitungsvorrichtung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI649285B (zh) * 2016-06-07 2019-02-01 全鴻精研股份有限公司 水平式玻璃蝕刻的方法

Also Published As

Publication number Publication date
WO2012119700A1 (de) 2012-09-13
DE102011013467A1 (de) 2012-09-13
DE102011013467A8 (de) 2012-11-22

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