201241879 六、發明說明： 【發明所屬之技術領域】 本發明係同時對至少兩個基板進行電 裝置及方法’丨其是對基板進行鍍膜處理 體或太陽能光電元件。 【先前技射宁】 基板進行電漿輔助處理的裝置及 面進行姓刻及鍍膜處理，均屬於 為了在基板上形成盡可能均勻且 的方法是化學氣相沉積法，尤其 >儿積法’也就是所謂的PECVD。 種方法是將一或數個基板置於真 力及溫度範圍内將一種反應氣體 體引入真空室，並輸入高頻範圍 至少部分轉變為電漿狀態。 了激發及保持電漿室或直空室内 法是在兩個電極之間接通一個高 發。在這個過程中，要接受處理 置通常本身就是作為電極。例如 要鍍膜的基板直接連接或固在一 下，這個電極與基板會以幾乎完 處理。相對於所產生之電漿的空 理的基板表面相對要小很多。 如JP 03-173 1 24提出一種垂直型 这種裝置中，有兩個互相對立的 漿辅助處理的 ’以製造半導 對 基板表 暴技術。 種常用 學氣相 這 疋的麼 混合氣 等氣體 為 •型的作 電漿激 固定裝 中，將 種情況 到電漿 方式處 例 置，在 久已習見之先前 很薄的鍍膜，一 是電漿輔助的化 空室内，並在規 或視鑛膜而定的 的電磁能，使該 的電漿，一種典 頻電壓，以產生 的基板或基板的 ，在平行板配置 個電極上。在這 全相同的方式受 間膨脹，以這種 的平行板鍍膜裝 薄膜基板支架被 201241879 設置在以絕緣材料製成的輪送裝置上 構成一個雙面電極結構，因此可以同日34兩個基板 對立的基板固定在基板支架上 夺將4個彼此 上。可移動的带兔 在這兩個支架的背面，其中 、電v體被 τ <兩個支举 接。高頻電壓通常是接通到平〜 ^射頻電 互相對立的電極中的一個電極。另外〜各器裝置的 通到外殼電位。但是對電極 個向頻電極έ ，這代本& 電極之間接通一個高頻電壓。 、的意義就201241879 VI. Description of the Invention: [Technical Field] The present invention relates to an electric device and a method for simultaneously performing at least two substrates, which are a coating treatment body or a solar photovoltaic element. [Previous technology shot Ning] The device and the surface of the substrate for plasma-assisted processing are both engraved and coated, all of which belong to the method of forming a substrate as uniform as possible, which is chemical vapor deposition, especially > Also known as PECVD. One method is to place one or several substrates in a force and temperature range to introduce a reactive gas body into the vacuum chamber, and the input high frequency range is at least partially converted into a plasma state. The method of exciting and maintaining the plasma chamber or the straight chamber is to switch a high level between the two electrodes. In this process, the process to be accepted is usually used as an electrode. For example, if the substrate to be coated is directly connected or fixed, the electrode and the substrate are almost completely processed. The surface of the substrate relative to the aircraft of the resulting plasma is relatively small. For example, JP 03-173 1 24 proposes a vertical type in which there are two mutually opposite slurry-assisted treatments to produce a semi-conducting substrate violent technique. A kind of gas that is commonly used in the gas phase, such as a gas mixture, is used as a plasma-type fixed device, and the sample is placed in a plasma mode. In the past, a thin coating was used, and the plasma was first. The auxiliary vacant chamber, and the electromagnetic energy depending on the ore film, makes the plasma, a typical frequency voltage, to produce a substrate or a substrate, which is disposed on the parallel plate. In this all the same way, the film substrate support is assembled by the parallel plate coating film by the 201241879 on the wheeling device made of insulating material to form a double-sided electrode structure, so that the two substrates can be opposed to each other on the same day. The substrate is fixed on the substrate holder to take 4 on each other. Movable belt rabbits On the back of the two brackets, the electric v body is connected by τ < two supports. The high-frequency voltage is usually turned on to one of the electrodes that are flat to the opposite side of the radio frequency. In addition, each device device is connected to the case potential. However, for the electrode to the frequency electrode έ, a high-frequency voltage is connected between the current & Meaning
但是在PECVD鍍膜過程 極的作法是有缺點的。因為在 與待鍍膜之基板相同的電漿沉_ 鍍膜過程後，就必須更換電極 淨化處理。此外，在純電容激 積會因為將基板置於電極上的 電容放電的電漿密度較小，會 因此處理過程會變得很長，進 中以基板支架作為激 這種情况下，電極也 積。因此經過一定次 ’或是對電極進行適 發的情況下，可處理 作法而受限。特別是 使處理時間變得相當 而墊高成本。However, there are disadvantages in the PECVD coating process. Since the electrode rinsing process is the same as that of the substrate to be coated, the electrode cleaning process must be replaced. In addition, in pure capacitors, the density of the plasma due to the discharge of the substrate on the electrode is small, so the process will become very long. In the case where the substrate holder is excited, the electrode also accumulates. . Therefore, after a certain number of times or when the electrode is suitable, it can be handled and limited. In particular, the processing time becomes equivalent and the cost is high.
US 2009/0004874 Α1 有一平面線圈在兩個互相 基板支架之間的間隔延伸 能夠配合這樣的設計方式 或豎井狀的接收口，且該 提出'種電漿處理室，在 胃立的基板及/或互相對 。為此處理室的外殼構造 ° 是說整理室具有狹 接彳欠D具有由互相對立的 窗構成的側壁。這個接收口將處理室分隔成兩個不 處理區’每-個處理區都有各自的氣體分佈，以產 種彼此分離的t梁。$種處王里室的缺點是在電衆鐘 程中’除了基板外，也會將介電窗參膜。 支架 互相 固定 源連 一組 則接 是在 發電 受到 數的 當的 的面 因為 長。 其内 立的 必須 縫狀 介電 同的 生兩 膜過 -4- 201241879 【發明内容】 本發明的目的是要改良電漿輔助處 特別是要盡可能有效率的利用可供使用 達到盡可能均勻的表面處理。另外還要 理的過程及循環時間，以及盡可能縮小 寸及體積。其他的目的還包括減少過程 及減輕真空室的清潔工作。 採用申請專利範圍第1項之電漿輔 籲及申請專利範圍第21項的方法，即可 的。其他附屬於這兩個主申請項的申請 的内容均為本發明的各種有利的應用方 本發明提出的裝置具有一個真空室 基板以相隔一規定之距離的方式置於該 基板之待處理的表面彼此面對。以這種 理至少兩個彼此互相對立的基板。此外 還具有一個電漿產生裝置，此電漿產生 φ 個激發線圈，其作用是感應激發至少一 的電漿。 激發線圈最好是以純感應激發的方 位於待處理之基板表面之間的電漿。卷 每 也能夠適當的引導構成電漿的氣體流人 對立的基板之間設有氣體流入口。 在一個電漿鍍膜過程中，以純感應 電襞’可以達到的沉積速率明顯高於電 感應激發比純電容激發更能夠提高 理基板的方法， 的電漿源，以及 縮短電漿辅助處 真空室的空間尺 氣體消耗量，以 助處理裝置，以 達到本發明的目 專利範圍之項目 式。 ’至少可將兩個 真空室内，並使 方式可以同時處 ，本發明的震置 裝置具有至少— 個位於基板之間 式激發至少~ % 然電漿產生裝置 。也就是在互相 激發的方式激發 激發。特别是 或维持之電聚 -5- 201241879 的密度。 由於電漿係位於兩個互相對立的基板之間，因此 K固電將就可以同時對多個在空間中彼此分開的基 進行鍍膜處理。由於待鍍膜或待處理的基板表面從至 兩側…的範圍限牵“主，因此可以減少真空室需要 清潔工作。透過該至少-個激發線圈可以產生-個能 與真空i 互彳目S立j_彼&基板直接作用的單 電聚。 本發明之裝置的另外一個優點是，由於是以感應 ^的方式激發電漿，因此無需在真空室内設置產生電 所需的電極。由於基板支架無需作為電漿源的一部分 因此其應用方式可以完全與電漿的產生無關。 根據一種有利的實施方式，激發線圈在切線方向 也就是激發線圈的外圓周，位於由互相對立之基板或 板支架之間的間隔之外。此處所謂的間隔是指以基板 基板支架的平面法線為準，一邊以彼此互相對立的基 面戍基板支架面為界’及另外一邊以在平面上垂直於 面法線的基板邊緣或基板支架邊緣為界的空間。因此 至少一個激發線圈在垂直於基板或基板支架之平面法 的平面上在基板或基板支架的一個想像的投影面之外 伸0 因此該至少一個激發線圈位於彼此互相對立之基 之間的所有想像的連接直線之外。 透過將線圈移至基板之間的間隔之外的作法，可 進一步去除真空室内基板之間的間隔的阻礙，這樣就 只 板 少 的 夠 激 漿 基 或 板 平 該 線 延 板 以 可 *, 201241879 以將基板以特別不佔空間的方式直接相鄰的設置在形成 於基板之間且可共同使用的單一電漿上。 透過這樣的方式可以縮小真空室内需提供的處理空 間’因此能夠縮短形成電漿條件所需的準備時間及栗抽 時間。此外’由於該至少一個激發線圈係位於基板間隔 之外，因此能夠將真空室的形狀設計成相對較簡單的立 方形’例如將真空室的各個侧壁都設計成平面狀，同時 具有一個底面及一個頂面。 # 除了可以將真空室設圍成矩形立方體狀外，也可以 將真空室的頂面及底面設計成圓形或橢圓形，同時其側 壁亦設計成具有與頂面及底面形狀配合的彎曲。 根據另外一種有利的實施方式，電聚產生裝置將電 磁能饋入電漿或形成電漿的混合氣體，以使電漿或混合 氣體能夠在Η模式中運轉及/或在Η模式中燃燒。 大家都知道，電磁輻射具有一個Ε場分量及一個Β 場分量，感應耦合電漿激發包括感應能量轉換機制及電 φ 容能量轉換機制，所謂「Ε模式」是指電容能量轉換機 制，「Η模式」是指純的感應能量轉換機制。感應激發 的特徵是在電漿中絕大部分是Η模式，或Η模式至少是 佔相當大的一部分。Η模式感應激發至少佔電漿之感應 能量轉換的10%、30%、50%、70%、或90%。關於此部 分及Η模式的更詳盡說明請參見Victor Kadetov所著的 論文 “Diagnostics and Modeling of an inductively coupled radio frequency discharge in hydrogen”第 14-16 頁，物理與天文系，魯爾大學Bochum 2004。 -7- 201241879 一般而言’透過Η模式運轉能夠達到 可供比較之電容激發電漿能夠達到的電漿 數量級。電漿產生裝置（尤其是該至少一 4 好是在電漿激發幾乎都是在Η模式中進行 運轉。 根據另外一種有利的實施方式，至少 以在其平面法線的方向上彼此間隔一段距 置在真空室内。以平面法線為準，電漿產 一個激發線圈最好是在基板之間延伸。這 是被設置在基板之間的間隔内。但是激發 切線方向上延伸到基板間隔之外，也就是 >卜’以便能夠形成相當於基板表面的盡 區°另外一種可能的方式是，該至少一個 上平行於基板面的外圍將基板（或更確切 架）圍繞住，但是在該至少一個基板的平面 則是位於基板間隔之外。 另外一種方式是，該至少一個激發線 此重疊的基板面之外或之内（或之間）延伸 以一直位於基板邊緣之外。如果將激發線 平面之外，則線圈的平面會相對於基板面 移位及/或被平行移動至與基板面相隔-置。尤其是在激發線圈位於基板面之外的 可以在基板之間的間隔内產生非常均勻且 漿，這是因為在這種情況下’磁場範圍的 以位於基板範圍之外。 的電漿密度比 检度大上一個 目激發線圈）最 的參數範圍内 兩個基板能夠 離的方式被設 生裝置的至少 表示激發線圈 線圈也可以在 延伸到基板之 可能大的電聚 線圈以其基本 地說是基板支 法線的方向上 圈在基本上彼 。激發線圈可 圈設置在基板 的平面法線被 -段距離的位 配置方式中， 密度很大的電 空間均勻性可 201241879 另外一個具有優點的方式是，激發線圈在切線方向 上將-個在基板之間形成的間隔基本上圍繞住。特別是 該至少-個激發線圈僅具有—個單一繞組，以便將線圈 的感應性及電功率損失保持在盡可能低的程度。線圈本 身可具有近似封閉的結構。但為了形成—個單—繞組， 需要單獨為各個線圈形成電連接。US 2009/0004874 Α1 has a planar coil extending between two mutually substrate supports to accommodate such a design or shaft-like receiving port, and the proposed plasma processing chamber is on a gastric substrate and/or Right each other. For this purpose, the outer casing construction of the treatment chamber is such that the finishing chamber has a narrow side wall D having side walls which are formed by mutually opposing windows. This receiving port divides the processing chamber into two non-processing zones. Each of the processing zones has its own gas distribution to produce separate t-beams. The disadvantage of the King's room is that in the electrician's clock, in addition to the substrate, the dielectric window will also be referred to. The brackets are fixed to each other and the source is connected to a group that is connected to the power generation. The intrinsic must be slit-like dielectric with the same two membranes -4- 201241879 [Invention] The object of the invention is to improve the plasma auxiliary, especially to be as efficient as possible to be used as evenly as possible Surface treatment. In addition, the process and cycle time are also reduced, as well as the size and volume as much as possible. Other purposes include reducing the process and reducing the cleaning of the vacuum chamber. It is ok to use the method of plasma assistance in item 1 of the patent application and the method of claim 21 in the scope of patent application. The contents of the other applications of the two main applications are all advantageous applications of the present invention. The device proposed by the present invention has a vacuum chamber substrate placed on the surface to be treated of the substrate at a predetermined distance. Face each other. In this way, at least two substrates that oppose each other are treated. In addition, there is a plasma generating device which produces φ exciting coils for inducing excitation of at least one of the plasmas. Preferably, the excitation coil is a plasma that is excited by pure induction between the surfaces of the substrate to be treated. Each of the rolls can appropriately guide the gas flowing into the plasma to provide a gas inflow port between the opposing substrates. In a plasma coating process, the deposition rate that can be achieved with pure inductive electro-hydraulic is significantly higher than that of electric induction excitation, which can improve the physical substrate, the plasma source, and the vacuum chamber where the plasma is assisted. The space gauge gas consumption is used to assist the treatment device to achieve the project formula of the scope of the invention. At least two vacuum chambers can be placed in the same manner, and the oscillating device of the present invention has at least one plasma excitation device at least between the substrates. That is, in a way that excites each other to stimulate. In particular, or maintain the density of the electro-convergence -5- 201241879. Since the plasma is located between two mutually opposing substrates, the K solidification will simultaneously coat a plurality of substrates separated from each other in space. Since the surface of the substrate to be coated or the substrate to be processed is limited to the range from the sides to the sides, it is possible to reduce the vacuum chamber to require cleaning work. The at least one excitation coil can be generated - one can interact with the vacuum i A single electropolymer that directly acts on the substrate. The other advantage of the device of the present invention is that since the plasma is excited in an induction manner, it is not necessary to provide an electrode required to generate electricity in the vacuum chamber. It is not necessary to be a part of the plasma source, so its application can be completely independent of the generation of the plasma. According to an advantageous embodiment, the excitation coil is in the tangential direction, that is, the outer circumference of the excitation coil, located on the opposite substrate or plate holder. In addition to the interval between the two, the interval is defined by the plane normal of the substrate substrate holder, and the base surface of the substrate is opposite to each other, and the other side is perpendicular to the surface method. The edge of the substrate or the edge of the substrate holder is the boundary space. Therefore, at least one excitation coil is in a plane perpendicular to the substrate or the substrate holder. Extending outwardly from an imaginary projection surface of the substrate or substrate holder 0 such that the at least one excitation coil is located outside of all imaginary connection lines between the mutually opposing bases. By moving the coils to the space between the substrates In addition, the hindrance of the spacing between the substrates in the vacuum chamber can be further removed, so that only a small amount of the substrate or the plate is flattened by the plate, so that the substrate can be used in a particularly space-free manner. Directly adjacent to each other is disposed on a single plasma that is formed between the substrates and can be used together. In this way, the processing space required in the vacuum chamber can be reduced. Therefore, the preparation time required for forming the plasma condition and the pumping time can be shortened. In addition, since the at least one excitation coil is located outside the substrate spacing, the shape of the vacuum chamber can be designed to be relatively simple cuboids, for example, each side wall of the vacuum chamber is designed to be planar, and has one The bottom surface and a top surface. # In addition to the vacuum chamber can be enclosed in a rectangular cube shape, vacuum can also be The top surface and the bottom surface of the chamber are designed to be circular or elliptical, and the side walls thereof are also designed to have a shape matching with the top surface and the bottom surface. According to another advantageous embodiment, the electropolymer generating device feeds electromagnetic energy into the plasma or A plasma mixed gas is formed to enable the plasma or mixed gas to operate in a helium mode and/or to burn in a helium mode. As is known, electromagnetic radiation has a field component and a field component, inductively coupled plasma. Excitation includes an inductive energy conversion mechanism and an electrical energy conversion mechanism. The so-called "Ε mode" refers to the capacitive energy conversion mechanism, and the "Η mode" refers to a pure inductive energy conversion mechanism. The characteristic of induction excitation is that most of the plasma is in the Η mode, or the Η mode is at least a considerable part. The Η mode induced excitation is at least 10%, 30%, 50%, 70%, or 90% of the induced energy conversion of the plasma. For a more detailed description of this section and the Η mode, see Victor Kadetov's paper "Diagnostics and Modeling of an inductively coupled radio frequency discharge in hydrogen" on pages 14-16, Department of Physics and Astronomy, Ruhr University Bochum 2004. -7- 201241879 Generally speaking, 'running in helium mode can achieve the order of magnitude of plasma that can be achieved by comparable capacitor-excited plasma. The plasma generating device (especially the at least one is preferably operated in the plasma mode in almost all of the plasma mode. According to another advantageous embodiment, at least one distance apart from each other in the direction of their plane normals In the vacuum chamber, which is based on the plane normal, the plasma generates an excitation coil preferably extending between the substrates. This is disposed in the interval between the substrates, but the excitation tangential direction extends beyond the substrate spacing. That is, it is to be able to form a region corresponding to the surface of the substrate. Another possible way is to surround the substrate (or more precisely) on the periphery of the at least one parallel to the substrate surface, but at least one The plane of the substrate is then located outside the substrate spacing. Alternatively, the at least one excitation line extends beyond or within (or between) the overlapping substrate faces to remain outside the edge of the substrate. In addition, the plane of the coil is displaced relative to the substrate surface and/or moved parallel to the substrate surface. Especially when the excitation coil is on the substrate In addition to this, a very uniform and slurry can be produced in the space between the substrates, because in this case the 'magnetic field range is outside the range of the substrate. The plasma density is greater than the detection of a single excitation coil. In the most parametric range, the two substrates can be separated from each other by means of at least the excitation coil of the generating device or in the direction of the possibly large electrocoil extending to the substrate in the direction of the substrate normal. Basically. The excitation coil can be circled in the positional arrangement of the plane normal of the substrate by the segment distance, and the density of the electrical space uniformity can be 201241879. Another advantageous way is that the excitation coil will be in the tangential direction. The spacing formed between them substantially surrounds. In particular, the at least one excitation coil has only a single winding to maintain the inductance and electrical power loss of the coil as low as possible. The coil itself can have an approximately closed configuration. However, in order to form a single-winding, it is necessary to form an electrical connection for each coil separately.
因此單一線圈繞組並不是完全封閉的，而是至少在 其連接範圍需要有間隙。單一線圈繞組的幾何形狀可以 是一個近似封閉的圓圈，但也可以是矩形或正方形，例 如類似基板或基板支架的形狀。 尤其是激發線圈的幾何形狀可以是和該至少—個固 定在基板支架上的基板的幾何形狀及/或幾何配置相 同。例如一種可能的方式是配合基板或基板支架的幾何 形狀，在激發線圈及基板之間實現一個在基板面的投影 上的等距配置，以便能夠在基板面上形成盡可能均勻的 電漿。 根據另外一種有利的實施方式，該至少一個激發線 _是設置在真空室外。這樣做的優點是可以縮小真空内 的體積，同時激發線圈也不必像設置在真空室内的激發 t極一樣，在經過鍍膜過程後必須接受清潔處理。此外， 將激發線圈設置在真空室外的配置方式可以靈活的被設 計成適當的幾何形狀’以形成所需要的磁場及/或電襞。 根據另外一種實施方式，一種有利的方式是真空室 的一個面對真空室之外的激發線圈的表面段落是可感應 遷過的。也就是說真空室的這個表面段落要能夠可讓電 201241879 j輻射的磁性分量透過。例如可以在真空室的壁面形成 一個介電窗，以達到這個目的。因此一種有利的方式是， 真空室的壁面至少有一部分是以介電材料製成，例=以 玻璃或陶瓷材料製成。也可以使用有開槽的金屬板，以 作為所謂的法拉第屏蔽（Faraday-Shield)，並構成至少< 讓電磁輻射的感應分量透過的屏蔽隔離。 另外一種不同的方式是將該至少一個激發線圈設置 在真空室内。在這種情況下，激發線圈最好是電絕緣， 以避免报高的局部電場強度。但是這樣做可能會有利於 電容放電，並阻礙電漿在所希望的Η模式下的運轉。佝 疋電絕緣並非一定必要。在真空室内，只要線圈與真办 室内壁或其他導電組件的距離在10 mm以上，就益兩& 外使線圈電絕緣。 ，…、喊另 在將激發線圈設置在真空室内的實施方式中，可、 使用螺旋狀的線圈。也就是說，線圈具有多個在—平乂 上的螺旋狀繞組，其中繞組所在的平面最好是與基板 平行。例如可以將線圈的螺旋面設置在互相對立 〜隹板 的中間’以盡可能為兩個基板創造相同的邊界條件。 除了可以設置在互相對立之基板的中間外，另外〜 種可能的方式是將該至少一個激發線圈設置在互相對立 的基板之外’也就是說，設置在面對基板背面的位置 而該基板背面則是背對基板間隔。 ’ 此處所謂的螺旋狀線圈也可以是指具有數個（例如 個）在共同平面上交錯重疊的螺旋狀單一線圈的線 圈如月〗面提及的論文（作者：Vict〇r Kadetov)所述，^Therefore, a single coil winding is not completely enclosed, but at least a gap is required in its connection range. The geometry of a single coil winding can be an approximately closed circle, but can also be rectangular or square, such as the shape of a substrate or substrate holder. In particular, the geometry of the excitation coil can be the same as the geometry and/or geometric configuration of the at least one substrate that is fixed to the substrate support. For example, one possible way is to match the geometry of the substrate or substrate holder to achieve an equidistant arrangement on the projection of the substrate surface between the excitation coil and the substrate so as to be able to form as uniform a plasma as possible on the substrate surface. According to a further advantageous embodiment, the at least one excitation line is arranged outside the vacuum chamber. This has the advantage of reducing the volume in the vacuum, and the excitation coil does not have to be cleaned after the coating process, like the excitation t-pole placed in the vacuum chamber. In addition, the arrangement in which the excitation coils are placed outside the vacuum chamber can be flexibly designed to the appropriate geometry to form the desired magnetic field and/or power. According to another embodiment, an advantageous way is that a surface section of the vacuum chamber facing the excitation coil outside the vacuum chamber is inductively movable. That is to say, this surface section of the vacuum chamber should be able to transmit the magnetic component of the electric radiation of 201241879 j. For example, a dielectric window can be formed on the wall of the vacuum chamber for this purpose. Therefore, in an advantageous manner, at least a part of the wall surface of the vacuum chamber is made of a dielectric material, for example, made of glass or ceramic material. It is also possible to use a slotted metal plate as a so-called Faraday-Shield and to constitute at least a shield isolation for transmitting an inductive component of electromagnetic radiation. Another different approach is to place the at least one excitation coil within the vacuum chamber. In this case, the excitation coil is preferably electrically insulated to avoid high local electric field strengths. However, doing so may help to discharge the capacitor and impede the operation of the plasma in the desired helium mode.佝 Electrical insulation is not necessary. In the vacuum chamber, as long as the distance between the coil and the inner wall of the real room or other conductive components is more than 10 mm, the coils are electrically insulated. In the embodiment in which the excitation coil is placed in the vacuum chamber, a spiral coil can be used. That is, the coil has a plurality of helical windings on the flat, wherein the plane in which the windings are located is preferably parallel to the substrate. For example, the helicoidal faces of the coils can be placed in the middle of each other to the side of the seesaw to create the same boundary conditions for the two substrates as much as possible. In addition to being disposed in the middle of the opposite substrates, another possible way is to dispose the at least one excitation coil outside the opposite substrate. That is, the position facing the back surface of the substrate and the back surface of the substrate It is back to the substrate spacing. 'Here called spiral coil may also be referred to〗 moon paper surface coil having a plurality (e.g. two) in a common single plane alternately superposed helical coils mentioned (OF: Vict〇r Kadetov) said, ^
-10- •S .201241879 樣做可以降低線圈的電阻，同時又能夠提高磁場的 密度。 另外一種可能的方式是使用至少兩個螺旋狀的 線圈’並將該至少兩個扁平線圈設置在基板支架背 板間隔的那一面上，也就是設置在基板支架的背面 這種將線圈设置在基板間隔之外的配置方式可以使 之間的間隔不存在任何線圈。 例如’一種可行的改良方式是在真空室内設置 ®彼此平行的螺旋狀扁平線圈’其中每一個基板或基 架均位於兩個扁平線圈之間。 根據另外一種有利的實施方式’螺旋狀激發線 繞組是以個別或成束的方式與待產生的電漿電絕緣 如可以將一個電絕緣的線圈鐵心螺旋狀捲繞成扁 圈’以製造激發線圈。另外，種可能的線圈配置方式 將一個非電絕緣的線圈鐵心螺旋狀捲繞，然後埋到 電絕緣的介質中。 鲁 另外一種可能的方式是將扁平線圈設置在兩個 層之間，或是在扁平線圈上設置至少一個絕緣層’ 對電漿形成成束的電絕緣。 不論是具有一或多個繞組的圓形線圈，或是扁 圈，該至少一個激發線圈都可以平行於至少兩個互 立的基板或基板構成的想像的基板面。視互相對立 板之間的距離而定，除了町以將該至少一個線圈設 基板中間之外，也可以將该至少一個線圈朝基板的 法線的方向移位，其中該炱少一個線圈在投影上沿 磁通 扁平 對基 上。 基板 3個 板支 圈的 。例 平線 ，是， 一種 絕緣 以便 平線 相對 的基 置在 平面 著基 -11 - 201241879 板的平面法線將基板在切線方向上圍繞住，因而位於基 板的投影面之外或位於基板間隔之外。 根據另外一種有利的實施方式，以至少一個基板的 平面法線為準，該至少一個激發線圈係設置在互相對立 的基板的間隔之外。在這種情況下，該至少一個激發線 圈不只是在切線方向上位於基板間隔之外，而是在垂直 方向上、也就是以至少一個基板的平面法線為準，也是 位於基板間隔之外。通常可以將激發線圈設置在面對基 籲板背面的位置，其中基板背面係背對基板間隔。 也可以設置多個大致是沿著基板的平面法線彼此位 移及彼此平行的激發線圈。例如，這些激發線圈可以是 位於基板面上、基板面之間、基板面之外、或是基板支 架之外，並在切線方向上基本上將基板圍繞住。 在這種情況下，激發線圈可以是在切線方向及垂直 方向（也就是基板或基板支架的平面法線的方向）被設置 在真空室内及真空室外。也可以是至少有一個激發線圈 鲁在某種程度上被整合到真空室的壁面。一種可能的方式 是，至少有一個激發線圈設置在真空室側壁及真空室底 部及/或真空室頂蓋之間的過渡區域。 .…丨/队％ I施方 式，固定基板用的基板支架不具備任何會影響電漿之維 持的功能。尤其是基板支架並不作為電極之用。但是其 ，支架仍然可以接通電壓，以便能夠對基板施以機=二 著力及/或對基板的離子轟擊造成特定的影塑。 此外，根據另外一種實施方式，產生電聚用的電漿 -12- Ξ 201241879-10- • S .201241879 This can reduce the resistance of the coil while increasing the density of the magnetic field. Another possible way is to use at least two spiral coils ' and arrange the at least two flat coils on the side of the substrate holder backing plate, that is, disposed on the back side of the substrate holder, such that the coil is disposed on the substrate The configuration outside the interval can be such that there is no coil between the intervals. For example, a possible improvement is to provide a spiral flat coil parallel to each other in a vacuum chamber, wherein each substrate or substrate is located between two flat coils. According to a further advantageous embodiment, the helical excitation line winding is electrically insulated from the plasma to be produced in an individual or bundle manner, such that an electrically insulated coil core can be spirally wound into an oblate ring to produce an excitation coil. . In addition, a possible coil configuration winding a non-electrically insulated coil core spirally and then buried in an electrically insulating medium. Another possible way is to place the flat coil between two layers or to provide at least one insulating layer on the flat coil to form a bundle of electrical insulation. Whether it is a circular coil having one or more windings, or a flat ring, the at least one excitation coil can be parallel to the imaginary substrate surface of at least two mutually independent substrates or substrates. Depending on the distance between the opposing plates, in addition to the middle of the at least one coil, the at least one coil may be displaced in the direction of the normal of the substrate, wherein the one coil is projected. The upper magnetic flux is flat on the base. The substrate has 3 plate rims. The flat line is an insulation so that the opposite base of the flat line is placed on the plane normal of the plane -11 - 201241879 board to surround the substrate in the tangential direction, and thus is located outside the projection surface of the substrate or at the substrate spacing outer. According to a further advantageous embodiment, the at least one excitation coil is arranged outside the spacing of the mutually opposite substrates, based on the plane normal of the at least one substrate. In this case, the at least one excitation coil is located not only outside the substrate spacing in the tangential direction but in the vertical direction, i.e., at the plane normal of at least one substrate, and also outside the substrate spacing. The excitation coils can typically be placed in a position facing the back of the substrate, with the back of the substrate being spaced away from the substrate. It is also possible to provide a plurality of excitation coils which are substantially parallel to each other and parallel to each other along the plane normal of the substrate. For example, the excitation coils may be located on the surface of the substrate, between the faces of the substrate, outside the face of the substrate, or outside the substrate holder, and substantially enclose the substrate in a tangential direction. In this case, the exciting coil may be disposed in the vacuum chamber and outside the vacuum chamber in the tangential direction and the vertical direction (i.e., the direction of the plane normal of the substrate or substrate holder). It is also possible that at least one of the excitation coils is integrated to some extent to the wall of the vacuum chamber. One possible way is that at least one of the excitation coils is disposed in the transition region between the side walls of the vacuum chamber and the bottom of the vacuum chamber and/or the top of the vacuum chamber. ....丨/队% I, the substrate holder for the fixed substrate does not have any function that will affect the maintenance of the plasma. In particular, the substrate holder is not used as an electrode. However, the holder can still be connected to a voltage so as to be able to apply a specific force to the substrate and/or cause a specific shadowing of the ion bombardment of the substrate. In addition, according to another embodiment, a plasma for electropolymerization is produced -12- Ξ 201241879
產生裝置充分利用電子回旋丘振、士 ，-厓王衣I 级兴搌波效應（ECWR) ECWR效應可以進一步提高電漿來疮 电水在度，這對於縮 及循環時間是很有利的。 根據另外一 個靜態且垂直於 一組 H e 1 m h ο 11 ζ 充分利用ECWR 根據另外一 真空室内以一基 的基板。特別是 出現的重力影響 微粒可能造成的 直的基板創造相 該至少兩個互相 板的大小及厚度 配置出現基板彎 種實施方式，冑 激發線圈的轴的 線圈產生這個將 效應的盡可能均 種實施方式，— 本上水平的平面 在鑛膜過程中能 。這樣做也有助 影響。特別是可 同的條件，以便 對立的基板，特 而定，可以避免 曲的情況。 襞產生裝置產生 磁場。例如，可 原本的激發線圈 勾的靜態磁場。 種有利的方式是 法線處理在垂直 夠以這種方式平 於降低真空室内 以為兩個互相對 月b夠以相同的方 別是相同的鍍膜 垂直或接近垂直 根據另外一種實施方式，為了盡可能使電漿 伸及/或對稱定位，電漿產生器所有用於產生電漿 是以互相對立的基板為準排列。這樣就可以在= 形成空間延伸及/或定位及方向基本上對稱的電漿 是鑛膜過程，這樣就可以在基板上達到幾乎完全 電漿沉積速率及完全相同的鑛膜厚度。 根據另外一種實施方式，電漿室可以分成至 子電聚室’而且每個子電漿室都包含部分電漿及 納一個基板。可以利用一個共同的電漿產生裝置 。透過 短處理 另外一 以利用 疊加以 能夠在 方向上 衡可能 的異物 立且垂 式處理 。視基 的基板 對稱延 的元件 板之間 。如果 相同的 少兩個 至少容 產生兩 -13- 201241879 個部分電漿。特別是透過一或多個電將的純感應激發， 可以僅用一個單獨的電漿源同時激發及運轉多個電漿。 例如這樣可以進行反對稱處理，尤其是對個別設置在子 電榮：至内且互相面對的基板進行反對稱鍍膜。這樣就可 以特別有效率的利用一個單獨的電漿源。 本發明的另一個獨立的申請專利項目是一種對至少 兩個基板進行電漿輔助處理的方法’這種方法的第一個 鲁步驟是將至少兩個基板以相隔一規定之距離的方式置於 真工至内。没置時應使基板之待處理的表面互相面對。 互相對立的基板或基板支架最好是彼此平行，並在其平 面法線的方向上彼此覆蓋。第二個步驟是以感應方式產 生及維持對基板進行表面處理的電漿。這個步驟是由具 有至少一個激發線圈的電漿產生裝置在該至少兩個基板 之間產生電装。基板或容納基板的支架最好是構成一個 彼此覆蓋、但是在其平面法線的方向上彼此相隔一段距 離的木構以便為待處理的基板的電襞產生創造盡可能 ®相同的條件。 種特別有利的方式是將該至少兩個基板朝垂直方 向设置在真空室内。如前面所述，以這種方式可以進一 步降低可能在電漿處理中導致反對稱的重力影響。此 外也可以降低真空室内的微粒或其他殘留物對平放或 水平方向放置之基板的影響。 電裝室可以分成至少兩個子電漿室，而且每個子電 漿室都包含部分電漿及至少容納一個基板。接著利用一 個共同的電漿產生裝置產生及/或維持該至少兩個部分 5 -14- .201241879 電漿。在這種情況下，最好是將激發線圈設置在電漿室 之外。 這種電漿轉助處理的方法最好是以基本上相同的方 式對設置在真空室内之互相對立的基板進行處理。特別 是在鍍膜過程中，設置在真空室内之互相對立的基板是 以基本上相同的電渡 >儿積速率被鏟膜處理。 此處要特別指出的是，利用前述所述的對至少兩個 基板進行電漿輔助處理之裝置可以執行本發明的方法。 籲本文中關於本發明之裝置特徵的說明亦適用於本發明之 處理方法，反之亦然。本發明的裝置並非僅能用於基板 之鍍膜’而是原則上亦適用於電漿辅助蝕刻。 【實施方式】 以下配合圖式及實施例對本發明的目的要特徵及各 種有利的應用可能性做進一步的說明β所有在圖式中以 圖形方式顯示的特徵，以及在說明部分以文字描述的特 徵，以及這些特徵的任意組合方式，均屬於本發明的範 •圍。 第1圖及第2圖分別顯示本發明提出的對至少兩個 互相對立的基板（16，20)進行電漿輔助處理之裝置的斷 面圖及俯視圖。圖中以示意方式顯示的真空/電漿處理裝 置1〇具有一個真空室12,其内放置兩個彼此間隔一萬 距離的基板支架14, 18。如第2圖所示’在每個基板支 架14’ 18上各有4個可解開的基板16, 2〇。 從第1圖可以看出，彼此面對的基板16，2〇在其平 面法線方向上彼此相隔一段垂直距離且彼此幾乎完全覆 -15- 201241879 蓋。真空/電t處理裝f 1G的底部形狀大致呈正方形。 真空/電衆處理裂置還具有—個位於真空t 12之外的激 發線圈22’基板16, 2〇的平面法線為準，激發線圈η 係位於彼此間隔一段距雜 距雜的基板1 6，20之間大約中間的 位置。 真空室12的外卷且女 2 /、有一個面對近似環繞的線圈 的感應滲透區24。例如，、丄λ» β 士 1夕J夕 見個感應滲透區是由玻璃降 22 瓷The generating device makes full use of the electron cyclotron Qiu Zhen, Shi, Ya Wang Yi I-class wave effect (ECWR) ECWR effect can further improve the plasma water temperature, which is very beneficial for reducing the cycle time. According to another static and perpendicular to a group of H e 1 m h ο 11 ζ make full use of ECWR according to another vacuum chamber with a base substrate. In particular, the occurrence of gravity affecting the particles may cause the straight substrate to create the phase of the at least two inter-plate sizes and the thickness of the substrate to appear in the embodiment of the substrate bend, the coil of the coil of the excitation coil produces this effect as uniform as possible. The way, the plane of the upper level can be in the process of the mineral film. This also helps. In particular, the same conditions can be used, so that the opposite substrate, in particular, can avoid the situation of the curve. The helium generating device generates a magnetic field. For example, the static magnetic field of the original excitation coil hook. An advantageous way is that the normal processing is vertical enough to be flat in the vacuum chamber in such a way that two mutually opposite moons b are the same or the same coating is perpendicular or nearly vertical according to another embodiment, in order to The plasma is stretched and/or symmetrically positioned, and all of the plasma generators used to generate the plasma are aligned with each other. Thus, the plasma which is spatially extended and/or positioned and oriented substantially symmetrically is a mineral film process, so that an almost complete plasma deposition rate and an identical film thickness can be achieved on the substrate. According to another embodiment, the plasma chamber can be divided into sub-electropolymer chambers and each sub-plasma chamber contains a portion of the plasma and one substrate. A common plasma generating device can be utilized. The short process is used to make use of the superposition to be able to balance the possible foreign objects in the direction and to handle them vertically. The base of the substrate is symmetrically extended between the components of the board. If the same two less, at least two -13-201241879 partial plasmas are produced. In particular, by purely inductive excitation of one or more electricity, a plurality of plasmas can be simultaneously excited and operated with only a single plasma source. For example, anti-symmetric processing can be performed, in particular, anti-symmetric coating is applied to the substrates which are individually disposed in the sub-Chengrong: inside and facing each other. This makes it possible to use a single plasma source particularly efficiently. Another independent patent application of the present invention is a method of plasma assisted processing of at least two substrates. The first step of the method is to place at least two substrates at a specified distance apart. Real work is within. The surfaces to be treated of the substrate should face each other when not in use. The mutually opposing substrates or substrate holders are preferably parallel to each other and covered each other in the direction of their plane normal. The second step is to inductively generate and maintain a plasma that is surface treated on the substrate. This step is to produce an electrical package between the at least two substrates by a plasma generating device having at least one excitation coil. Preferably, the substrate or the holder for accommodating the substrate constitutes a wooden structure which is covered with each other but spaced apart from each other in the direction of its plane normal to create as much as possible the same conditions for the electric discharge of the substrate to be processed. A particularly advantageous way is to arrange the at least two substrates in a vacuum chamber in a vertical direction. As described above, in this way, it is possible to further reduce the influence of gravity which may cause antisymmetry in the plasma processing. It also reduces the effects of particles or other residues in the vacuum chamber on the flat or horizontally placed substrate. The electrical prefabrication chamber can be divided into at least two sub-plasma chambers, and each sub-plasma chamber contains a portion of the plasma and at least one substrate. The at least two portions 5 - 14 - .201241879 are then produced and/or maintained by a common plasma generating device. In this case, it is preferable to arrange the exciting coil outside the plasma chamber. Preferably, the plasma transfer treatment process treats opposing substrates disposed within the vacuum chamber in substantially the same manner. In particular, during the coating process, the mutually opposing substrates disposed in the vacuum chamber are treated by the shovel film at substantially the same electrical flow rate. It is specifically noted herein that the method of the present invention can be carried out using the apparatus described above for plasma assisted processing of at least two substrates. The description herein of the features of the apparatus of the present invention is also applicable to the processing method of the present invention, and vice versa. The apparatus of the present invention is not only applicable to the plating of the substrate, but is also applicable in principle to plasma-assisted etching. [Embodiment] The following is a description of the object features and various advantageous application possibilities of the present invention in conjunction with the drawings and the embodiments. All of the features that are graphically displayed in the drawings, and the features described in the description section. And any combination of these features is within the scope of the present invention. Fig. 1 and Fig. 2 respectively show a cross-sectional view and a plan view of a device for performing plasma-assisted processing on at least two mutually opposite substrates (16, 20) proposed by the present invention. The vacuum/plasma processing apparatus 1 shown schematically in the drawing has a vacuum chamber 12 in which two substrate holders 14, 18 spaced apart from each other by 10,000 are placed. As shown in Fig. 2, there are four detachable substrates 16 and 2 on each of the substrate holders 14'. As can be seen from Fig. 1, the substrates 16, 2 facing each other are separated from each other by a vertical distance in the plane normal direction thereof and are almost completely covered with each other -15 - 201241879. The bottom shape of the vacuum/electrical t-treatment assembly f 1G is substantially square. The vacuum/electricity processing cleavage also has a substrate 16 of the excitation coil 22' outside the vacuum t12, the plane normal of 2〇 is used, and the excitation coil η is located at a distance from each other. , about the middle position between 20. The outer chamber of the vacuum chamber 12 and the female 2/ have an inductive permeation zone 24 facing the approximately circumferential coil. For example, 丄λ»β士一夕J 夕 see an induction permeability zone is reduced by glass 22 porcelain
^類的介電材料構成°另外-種可能的補充方式是在部 刀壁面24上設置有開槽或開孔的金屬板以產生法拉第 屏蔽效應（Faraday-ShieM)。透過這種方式，在線圈22 可產生的高頻場中，$ φ D 、 ^ ^ Τ 主ν β場分量可以饋入真空室12, 特別是饋入基板1 6，20之間的間隔。 線圈22的尚頻場與待形成於基板丨6，2〇之間的電 桌80的感應耦合是在所謂的Η模式中進行。處理裝置 10的操作參數，特別是要使用的過程氣體、過程溫度、 過程壓力、以及激發線圈22的電控制，應彼此配合，以 便忐夠在所謂的Η模式中，使線圈22可產生的電磁場及 電裝80之間進行能量饋入。 在由兩個互相對立的基板16，2〇形成的三明治式配 置中’利用真空室12内產生的電漿80可以有效的對基 板表面進行蝕刻或鍍膜處理。此外，透過線號22與電漿 8〇的感應耦合可以產生很高的電漿密度及很高的沉積速 率’因而縮短過程及循環時間。也可以將激發線圈22設 置在真工至1 2之外，這樣就可以縮小真空室1 2的體積， 使真空室抽空的工作量變得較低。 -16- 201241879 η八不a圓τ 二王以的形狀為矩形，甚至 是正方形。位於外面的激發線圈22幾伞胳士 味于將真空室12的 整個外圍圍繞住。激發線圈22只有在泰 巧仕电連接件26，28 的部分有開槽。為了使電感L盡可能的丨 J此的小，—種有利的 方式是激發線圈2 2只有一個繞組。^ Dielectric material composition of the class. Another possible complement is to provide a slotted or perforated metal plate on the blade wall surface 24 to produce a Faraday-ShieM effect. In this manner, in the high frequency field that coil 22 can generate, the $ φ D , ^ ^ Τ main ν β field component can be fed into vacuum chamber 12, particularly the spacing between substrates 125, 20. The inductive coupling of the frequency field of the coil 22 to the table 80 to be formed between the substrates 丨6, 2〇 is performed in a so-called Η mode. The operating parameters of the processing device 10, particularly the process gases to be used, the process temperature, the process pressure, and the electrical control of the excitation coils 22, should be coordinated to each other in order to provide the electromagnetic field that the coil 22 can generate in a so-called helium mode. Energy is fed between the electrical equipment 80. The surface of the substrate can be effectively etched or plated by using the plasma 80 generated in the vacuum chamber 12 in a sandwich configuration formed by two mutually opposing substrates 16, 2 . In addition, the inductive coupling between line number 22 and plasma 8〇 produces a high plasma density and a high deposition rate, thus shortening the process and cycle time. It is also possible to set the exciting coil 22 outside the real time to 12, so that the volume of the vacuum chamber 12 can be reduced, and the workload for evacuating the vacuum chamber becomes lower. -16- 201241879 η八不a圆τ The shape of the two kings is a rectangle, or even a square. The excitation coil 22 located outside is surrounded by a plurality of umbrellas surrounding the entire periphery of the vacuum chamber 12. The excitation coil 22 is only slotted in the portion of the Taikoy electrical connector 26, 28. In order to make the inductance L as small as possible, an advantageous way is that the excitation coil 2 2 has only one winding.
在本實施例中，線圈22及真空室12的形狀均盥4 個基板❸酉己置方式配合。在$2圖中以示意方式顯示 之下基板支架14上具有4個基板16, 2〇的基板配置的 外圍到幾乎將其整個圍繞住的激發線圈22的距離幾乎 完全相等。此外，激發線圈22及在圖示中未明確繪出的 反應氣體的進氣口均位於基板丨6，2〇之間的中間位置。 這可以從第i圖中的水平對稱轴清楚的看出。線圈 22相對於基板16，20的對稱配置可以互相對立的基板 1 6，20的鍍膜過程創造幾乎完全相同的條件。 雖然第1圖中的處理裝置10是平放的，也就是基板 1 6，20是朝水平方向放置，但是經證實一種有利的方式 是將基板16，20及基板支架14，18垂直放置（也就是轉 動90度）。透過這種方式可以補償或避開重力可能造成 的效應。在這種情況下’在水平方向上彼此間隔一段距 離的兩個基板可以被位於其間的電漿8〇以幾乎完全相 同的方式處理。 第3圖顯示另外一種構造方式的真空室3〇。真空室 3 0的形狀為圓形，同時有—個激發線號3 2位於真空室 3 0之外。和第2圖顯示的俯視圖類似，第3圖也沒有精 確的繪出真空室3 0的側壁。真空室3 〇的側壁位於感應 -5 -17- 201241879 渗透的表面區34。 第4圖顯示如第1圖之真空處理裝置的另外— 1 ~種 造方式的部分斷面圖。和第1圖的構造方式不回 的地 是，位於外面的激發線圈40具有兩個繞組36，38 且繞組3 6 ’ 3 8是沿著垂直方向’也就是沿著線圈柏， 螺旋狀延伸。和第1圖至第4圖的構造方式不同的地 是，第5圖至第8圖的所有構造方式都具有位於内部 線圈。也就是說’激發線號5〇，56，62都位於真空 籲 6 0内。 在第5圖的實施例中，從側面將基板1 6，2〇之間 間隔圍繞件的線圈50和前面的實施例一樣僅具有一 外覆絕緣體54的線圈繞組52。這對於產生線圈5〇及 襞80之間的純感應輕合是很有利的 第6圖令的線圈56是設置在互相對立的基板16 20及/或基板支架14，18之間的螺旋狀扁平線圈。線 56具有彼此電連接的同心交錯螺旋狀繞1且57, 58。繞 5 7，5 8或整個螺旋狀总 屏平線圈5 6具有一個位於内部 電導體52，其中雷邋挪 、 體52被的絕緣體54圍繞住。 在這種構造方式中，如鉻娩咕以 ’ 、τ，激發線唬5 ό及待產生的電 80彼此覆蓋。和前面的眘 π貫施例一樣，應盡可能將線圈 設置在兩個互相對立的Αl W基板16，20的隔的中間。 和第6圖中被絕緣辦^ Α 體圍..堯住的線圈5 6不同的是， 7圖的貫施方式是在兩個組緣展a ί回絕緣層66，68之間設置一個 絕緣的線圈62。絕緣層⑷⑼將真空室6()分成上半 及下半部。這種構造方式（與線圈配置無關）可以利用 構 方 而 以 方 的 室 的 個 電 ) 圈 組 的 漿 56 第 未 部 單 201241879 獨一個線圈在真空室60内分隔出彼此氣密分開的子真 空室，以便對位於不同的子真空室内的互相對立的基板 16，20進行不同的處理。 因此一種有利的方式是，將感應滲透屏蔽體66，68 構成的區域與周圍的真空室6〇氣密分開。例如，可以將 玻璃或陶瓷材料製成的屏蔽體66，68以氣密方式設置在 真空室60的内壁上。 另外一種可能的方式是將未與真空室内壁連接的線 籲圈62埋到一個專屬的線圈外殼中。這樣就可以將線圈區 的壓力調整到一個不同於周圍之真空室60的壓力，因此 在線圈62的周圍就不會發生電漿點火，使線圈62不會 或僅是很小程度的受到電漿處理。 根據第8圖的實施方式，螺旋及平面狀的線圈56不 疋了以设置在基板1 6，2 0之間，而是也可以設置在基 板間隔之外。此處是將線圈設置在基板間隔之外，而且 是面對基板16’ 20及/或支板支架14，18的背面，其中 鲁基板1 6，20及/或基板支架1 4，1 8的背面係背對基板間 隔。這種實施方式是將一個上激發線圈56設置在上基板 支架1 8的上方，也就是設置在基板支架丨8背對基板間 隔的那一個面上，而下激發線圈5 6也是以同樣的方式設 置。在這種情況下，激發線圈56是設置在真空室60内。 但是也可以將激發線圈56設置在真空室60之外，但前 提是電磁能對面對激發線圈5 6的真空室壁具有足夠的 渗透性，也就是可以輸入耦合到真空室60内。 雖然在圖示顯示的所有實施方式中，基板1 6，20及 -19- 201241879 線圈22 ’ 32，40，5〇，56 ’ 62都是平放及/或水平設置， 但是根據本發明’特別有利的方式是基板16，20及線圈 22’ 32’ 4〇’ 50’ 56, 62 係垂直設置。 另外 〜種可能性是，第6圖至第8圖中的螺旋狀层 平線圈56， 62並非只能設置在真空室6〇内’而是也 以設置在直$ Λ , 至60之外。但是在這種情況下，面對線圈 56，62的真办 爲二至壁必須是由能夠讓感應激發滲透過 材料製成。 的 個彼：二:::二I:種可能的配置方式’那就是將兩 的累鉍狀扁平線圈62設置在待處理的基板 16 ’ 20之間。 低 ，線圈62被可以被感應滲透的屏蔽 ρ:開。這样以氣密密封的方式與將其圍繞住的真空室60 二二就可以在屏蔽體66，68之間的線圈區創造出 電漿區不同的邊界條件，以有效防 之間發生電漿點火的情況。 石相卜，透過設置兩個螺旋狀線圈還可以形成一個以 互相對立的基板16，20 & ,佳 ,,ΟΛ 為準的對稱的線圈配置。與基板 16 ’ 20的平面法線平 丁的用於線圈62的電觸點接通件 可以對稱排列，也就是 疋u真空室60及基板16，20的對 稱面為準對稱排列。 第10圖顯示一種斑笛^ /、弟8圖類似的實施方式，其區 是兩個設置在基板16，2 〇々 之間的處理區的線圈62本身 並不具備絕緣體54，而杲站θ ^ J疋破屏蔽體62，66與基板16， 20隔開。 第11圖顯示另外一種實施 方式，其中兩個基本上是 -20- 201241879 平面形的激發線圈6 2分別位於面對彼此以背面互相對 立之基板16，20及/或基板支架14，18的位置。兩個線 圈62係設置在基板間隔1 〇〇之外，其中基板間隔1 〇〇在 基板16，20之平面法線的方向是以基板本身為界，及/ 或以未在圖中明確繪出的基板面為界。反之，在與此垂 直的方向’也就是在基板面的方向，基板間隔1〇〇是以 基板邊緣為界’也就是以第1 1圖中想像的邊緣連接線 102為界。 # 此外，本實施方式還設有與第1圖顯示之激發線圈 2 2相同的另外一個激發線圈2 2。雖然以基板1 6，2 0的 平面法線為準，激發線圈2 2大約是位於基板1 6，2 0及/ 或基板支架1 4，1 8之間的中間位置。但是在與此垂直的 平面上，激發線圈22卻是位於基板間隔1 〇〇之外，並在 切線方向上將基板間隔1 00圍繞住。 第1 2圖顯示另外一種線圈配置方式，其中兩個激發 線圈50a，50b被整合到真空室60的壁面内。激發線圈 春 50a，50b係位於真空室60的上過渡區及下過渡區或角 落，也就是位於真空室60的側壁及底面或頂面之間的過 渡區。類似於第5圖的實施方式，激發線圈50a，50b各 具有一個單一的繞組及/或一個帶有絕體54 的電導體 52 ° 雖然激發線圈50a，50b可以說是設置在真空室60 内，但不論是以基板1 6，20的表面延伸為準，或是以基 板16，20的平面法線為準，激發線圈50a，50b都是位 於基板1 6，20之間的基板間隔1 〇〇之外。除了可以整合 -21 - 201241879 到真空室的壁面内之外’也可以是其他任意的配置方 式，其中至少有一個激發線圈50a，50b是在基板16， 20的平面法線方向或與此垂直的方向（也就是橫向或切 線方向）被設置在真空室60内及/或真空室60之外。 第13圖顯示另外一種實施方式共有3個單一的激發 線圈22a，22b ’ 22c，這些線圈均類似於第1圖中的線圈 22。激發線圈22a’ 22b’ 22c基本上彼此平行，並在基 板16，20及/或基板支架的切線方向上延伸及位於基板 _ 間隔100之外。在基板16，20的平面法線的方向上， 只有中間的激發線圈22b位於兩個基板面之内，而另外 兩個外圍的激發線圈2 2 a ’ 2 2 c則是彼此對稱的設置在對 稱於兩個基板1 6 ’ 2 0的位置。以基板1 6，2 0的平面法 線為準，兩個外圍的激發線圈2 2 a，2 2 c是位於與基板背 面相同的高度上，也就是位於基板1 6，20背對基板間隔 的兩一面的高度上。 此外’在第13圖的實施方式中，幾乎整個側面2 4 鲁都是可滲透的壁面，以便激發線圈22a，22b，22c產生 的電磁輻射能夠盡可能不受阻礙的進入真空室。 雖然圖示中所有實施方式都是將基板水平放置，但 是對本發明而言，特別有利的方式是垂直設置，也就是 說將基板1 6，20及激發線圈大約旋轉90度。 在以上說明的圖示中’相同或相同作用的元件是以 相同的元件符號標示。不過第8圖至第1 3圖中的激發線 圈 56，62，50a，50b，22a，22b，22c 也可以是基本上 相同的線圈。但是另外一種可能性是，以相同元件符號 -22- 201241879 標示的激發線圈也可以是不同的線圈 線圈5 6。 例如’這樣做可以產生電漿激發 以及對輸入真空室的能量耦合進行微 同形式及/或不同尺寸的激發線圈56， 22b，22c ’可以對互相對立的基板16 理結果。 利用以上的處理裝置特別是可以 籲晶圓狀基板進行鍍膜，以形成薄獏太 【圖式簡單說明】 第1圖係本發明對至少兩個互相 漿輔助處理之裝置的斷面圖。 第2圖係在對稱面的高度穿過如 個縱斷面圖。 第3圖係一個環形電漿室的縱斷 第4圖係一個電衆室的部分斷面 # 一個包含兩個繞組的激發線圈。 第5圖係一個具有設置於内部 室。 第6圖係一個真空室的部分斷面 設置在基板之間的螺旋狀扁平線圈。 第7圖係一個埋設在兩個絕緣層 扁平線圈。 第8圖係兩個位於基板間隔之外 的螺旋狀扁平線圈。 -23- ，例如第8圖中的 的空間不均勻性， 調。最後，利用不 62，50a，50b，22a， ，20產生不同的處 對扁平及平面形的 陽能模組。 對立的基板進行電 第1圖之裝置的一 面圖。 圖，該電漿室具有 之激發線圈的電漿 圖，該真空室具有 之間的中心位置的 、但位於電漿室内 201241879 第9圖係—種實施方式，具有兩個彼此平行且位於 基板間隔内的扁平線圈。 第1 0圖係另外一種實施方式，具有兩個位於基板間 隔之外的扁平線圈。 第1 1圖係另外一種實施方式’具有一個位於真空室 之外的激發線圈及兩個位於真空室内的激發線圈。 第12圖係一種實施方式，具有整合到真空室壁面内 的激發線圈。 _ 第1 3圖係另外一種實施方式’具有共計3個在基板 的平面法線方向上彼此位置錯開的激發線圈。 【主要元件符號說明】 10 真空處理裝置 12 真空室 14 基板支架 16 基板 18 基板支架 20 基板 22 線圈 24 可渗透表面段 26 觸點 28 觸點 30 真空室 32 線圈 34 可渗透表面段 36 線圈繞組 5 -24- 201241879 38 線圈繞組 40 線圈 50 線圈 52 電導體 54 絕緣體 56 線圈 57 線圈繞組 58 線圈繞組 60 真空室 62 線圈 66 絕緣體 68 絕緣體 80 電漿 100 基板間隔In the present embodiment, the shape of the coil 22 and the vacuum chamber 12 are matched in a manner of four substrates. In the $2 diagram, the periphery of the substrate arrangement having the four substrates 16 on the substrate holder 14 is shown to be almost completely equal to the distance of the excitation coil 22 which is almost entirely surrounded. Further, the excitation coil 22 and the intake ports of the reaction gas not explicitly shown in the drawing are located at intermediate positions between the substrates 丨6, 2〇. This can be clearly seen from the horizontal symmetry axis in Figure i. The symmetrical arrangement of the coils 22 relative to the substrates 16, 20 creates substantially identical conditions for the coating process of the opposing substrates 106, 20. Although the processing device 10 of Figure 1 is laid flat, that is, the substrate 16, 20 is placed in a horizontal direction, it has proven to be advantageous to place the substrates 16, 20 and the substrate holders 14, 18 vertically (also It is rotated 90 degrees). In this way, the effects of gravity can be compensated or avoided. In this case, the two substrates which are spaced apart from each other in the horizontal direction can be treated in almost the same manner by the plasma 8 。 therebetween. Figure 3 shows a vacuum chamber 3〇 of another configuration. The vacuum chamber 30 has a circular shape with an excitation line number 3 2 outside the vacuum chamber 30. Similar to the top view shown in Fig. 2, the third drawing also does not accurately depict the side walls of the vacuum chamber 30. The side wall of the vacuum chamber 3 is located in the surface area 34 where the infiltration -5 -17 - 201241879 is infiltrated. Fig. 4 is a partial cross-sectional view showing another embodiment of the vacuum processing apparatus of Fig. 1. The construction of Fig. 1 is not returned. The outer excitation coil 40 has two windings 36, 38 and the windings 3 6 ' 38 extend helically along the vertical direction, that is, along the coils. Different from the construction of Figs. 1 to 4, all the configurations of Figs. 5 to 8 have the inner coil. That is to say, the 'excitation line numbers 5〇, 56, 62 are all within the vacuum call 60. In the embodiment of Fig. 5, the coil 50 separating the spacers between the substrates 1, 6 and 2 from the side has only one coil winding 52 covering the insulator 54 as in the previous embodiment. This is advantageous for producing a purely inductive coupling between the coils 5〇 and 襞80. The coil 56 of the sixth embodiment is a spiral flat disposed between the opposing substrates 16 20 and/or the substrate holders 14, 18 Coil. Line 56 has concentrically staggered helical turns 1 and 57, 58 that are electrically connected to each other. The winding 5, 5 8 or the entire spiral-shaped flat-plate coil 56 has an inner conductor 52, wherein the lightning-removing body 52 is surrounded by the insulator 54. In this configuration, for example, chrome is covered with ', τ, the excitation line 唬5 ό and the electricity 80 to be generated are covered with each other. As in the previous cautious example, the coil should be placed as far as possible between the two opposing WW W substrates 16,20. The difference between the coils that are insulated by the 办 Α . . . . . . . . 5 5 5 5 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 Coil 62. The insulating layer (4) (9) divides the vacuum chamber 6 () into an upper half and a lower half. This configuration (independent of the coil configuration) can utilize the configuration of the square chamber of the chamber. The slurry of the coil group 56. The second part of the coil is a single coil in the vacuum chamber 60 to separate the sub-vacuum which is airtightly separated from each other. The chambers are treated differently for mutually opposing substrates 16, 20 located in different sub-vacuum chambers. Therefore, it is advantageous to separate the area formed by the inductively permeable shields 66, 68 from the surrounding vacuum chamber 6〇. For example, the shields 66, 68 made of glass or ceramic material may be disposed in an airtight manner on the inner wall of the vacuum chamber 60. Another possibility is to bury the loop 62, which is not connected to the inner wall of the vacuum chamber, into a dedicated coil housing. Thus, the pressure in the coil region can be adjusted to a pressure different from that of the surrounding vacuum chamber 60, so that plasma ignition does not occur around the coil 62, so that the coil 62 is not or only slightly plasma-treated. deal with. According to the embodiment of Fig. 8, the spiral and planar coils 56 are not disposed to be disposed between the substrates 160, 20, but may be disposed outside the substrate spacing. Here, the coil is disposed outside the substrate spacing and is facing the back surface of the substrate 16' 20 and/or the support brackets 14, 18, wherein the Lu substrate 16, 20 and/or the substrate holder 14, 18 The back side is spaced back to the substrate. In this embodiment, an upper excitation coil 56 is disposed above the upper substrate holder 18, that is, on the surface of the substrate holder 8 spaced apart from the substrate, and the lower excitation coil 56 is also in the same manner. Settings. In this case, the excitation coil 56 is disposed in the vacuum chamber 60. However, it is also possible to arrange the excitation coil 56 outside of the vacuum chamber 60, but it is provided that the electromagnetic energy has sufficient permeability to the vacuum chamber wall facing the excitation coil 56, i.e., the input can be coupled into the vacuum chamber 60. Although in all of the embodiments shown in the figures, the substrates 16 6, 20 and -19-201241879 coils 22 ' 32, 40, 5 〇, 56 ' 62 are all laid flat and/or horizontally, but according to the invention 'special Advantageously, the substrates 16, 20 and the coils 22' 32' 4 〇 ' 50' 56, 62 are arranged vertically. Further, it is possible that the spiral level coils 56, 62 in Figs. 6 to 8 are not only disposed in the vacuum chamber 6' but are also disposed outside the straight line 至 to 60. However, in this case, the true facing of the coils 56, 62 must be made of a material that allows the inductive excitation to penetrate the material. The other one: two::: two I: a possible configuration" 'that is, two entangled flat coils 62 are placed between the substrates 16' 20 to be processed. Low, coil 62 is shielded by osmosis ρ: on. Thus, in a hermetic sealing manner and the vacuum chamber 60 surrounding it, a different boundary condition of the plasma region can be created in the coil region between the shields 66, 68 to effectively prevent plasma from occurring between them. Ignition situation. Stone phase, by arranging two spiral coils, can also form a symmetrical coil configuration with mutually opposing substrates 16, 20 & The electrical contact members for the coil 62 which are flat with the plane normal of the substrate 16' 20 can be arranged symmetrically, i.e., the symmetrical surfaces of the 真空u vacuum chamber 60 and the substrates 16, 20 are quasi-symmetrical. Fig. 10 shows a similar embodiment of a motley//8, in which the coil 62 of the two processing zones disposed between the substrates 16, 2 并不 does not itself have the insulator 54, and the station θ The J-breaking shields 62, 66 are spaced apart from the substrates 16, 20. Figure 11 shows another embodiment in which two substantially -20-201241879 planar shaped excitation coils 6 2 are located on the substrates 16, 20 and/or substrate holders 14, 18 facing each other with the back facing each other. . The two coils 62 are disposed outside the substrate spacing 1 ,, wherein the substrate spacing 1 〇〇 is in the direction of the plane normal of the substrate 16, 20 is bounded by the substrate itself, and/or is not explicitly depicted in the figure The substrate surface is bounded. On the contrary, in the direction perpendicular thereto, that is, in the direction of the substrate surface, the substrate spacing 1 is bounded by the edge of the substrate, which is bounded by the edge connecting line 102 conceived in Fig. 11. Further, in the present embodiment, another excitation coil 2 2 similar to the excitation coil 2 2 shown in Fig. 1 is provided. Although the plane normal of the substrate 160, 20 is used, the excitation coil 22 is approximately at an intermediate position between the substrate 1, 60, and/or the substrate holders 14, 4, 18. However, in the plane perpendicular thereto, the exciting coil 22 is located outside the substrate interval of 1 , and surrounds the substrate by 100 sec in the tangential direction. Figure 12 shows another coil arrangement in which two excitation coils 50a, 50b are integrated into the wall of the vacuum chamber 60. The excitation coil springs 50a, 50b are located in the upper transition zone and the lower transition zone or corner of the vacuum chamber 60, that is, the transition zone between the side wall and the bottom or top surface of the vacuum chamber 60. Similar to the embodiment of Fig. 5, the excitation coils 50a, 50b each have a single winding and/or an electrical conductor 52 with a permanent body 54. Although the excitation coils 50a, 50b can be said to be disposed in the vacuum chamber 60, However, regardless of the surface extension of the substrate 16, 20, or the plane normal of the substrates 16, 20, the excitation coils 50a, 50b are the substrate spacing between the substrates 1, 6, 20 Outside. In addition to being able to integrate -21 to 201241879 into the wall of the vacuum chamber, 'any other arrangement may be used, at least one of which is in the plane normal direction of the substrate 16, 20 or perpendicular thereto. The direction (ie, the lateral or tangential direction) is disposed within the vacuum chamber 60 and/or outside of the vacuum chamber 60. Figure 13 shows another embodiment having a total of three single excitation coils 22a, 22b' 22c, which are similar to coils 22 in Figure 1. The excitation coils 22a' 22b' 22c are substantially parallel to each other and extend in the tangential direction of the substrates 16, 20 and/or the substrate holder and outside the substrate_interval 100. In the direction of the plane normal of the substrates 16, 20, only the intermediate excitation coil 22b is located within the two substrate faces, while the other two peripheral excitation coils 2 2 a ' 2 2 c are symmetrical to each other. At the position of the two substrates 1 6 '20. Taking the plane normal of the substrate 160, 20 as the standard, the two peripheral excitation coils 2 2 a, 2 2 c are located at the same height as the back surface of the substrate, that is, the substrate 16 6 is spaced from the substrate. The height of both sides. Furthermore, in the embodiment of Fig. 13, almost the entire side surface 24 is a permeable wall surface so that the electromagnetic radiation generated by the excitation coils 22a, 22b, 22c can enter the vacuum chamber as unobstructed as possible. While all of the embodiments in the figures are for placing the substrate horizontally, it is particularly advantageous for the present invention to be vertically arranged, i.e., to rotate the substrate 16, 20 and the excitation coil approximately 90 degrees. Elements that are the same or the same in the above-described illustration are denoted by the same reference numerals. However, the excitation coils 56, 62, 50a, 50b, 22a, 22b, 22c in Figs. 8 to 13 may also be substantially identical coils. However, another possibility is that the excitation coils marked with the same component symbol -22-201241879 can also be different coil coils 56. For example, this can result in plasma excitation and excitation coils 56, 22b, 22c' of the same form and/or different sizes for the energy coupling of the input vacuum chamber can be used to align the opposing substrates. In particular, the above processing apparatus can be used to apply a wafer-like substrate for coating to form a thin sheet. [Schematic description of the drawings] Fig. 1 is a cross-sectional view of the apparatus for at least two mutually assisted processing of the present invention. Figure 2 is taken through a longitudinal section at the height of the plane of symmetry. Figure 3 is a longitudinal section of a toroidal plasma chamber. Figure 4 is a partial section of an electrical room. # An excitation coil containing two windings. Figure 5 is a diagram of one having an interior chamber. Figure 6 is a partial cross section of a vacuum chamber with a spiral flat coil disposed between the substrates. Figure 7 is a flat coil embedded in two insulating layers. Figure 8 is a diagram of two spiral flat coils located outside the spacing of the substrate. -23- , for example, the spatial inhomogeneity in Figure 8, tune. Finally, the use of no 62, 50a, 50b, 22a, , 20 produces different flat and planar cation modules. The opposite substrate is electrically connected to a side view of the apparatus of Fig. 1. The plasma chamber has a plasma pattern of an excitation coil having a central position therebetween, but located in the plasma chamber 201241879. FIG. 9 is an embodiment having two parallel to each other and spaced apart from the substrate. Flat coil inside. Figure 10 is another embodiment with two flat coils located outside of the substrate spacing. Fig. 1 is another embodiment 'having an excitation coil outside the vacuum chamber and two excitation coils located in the vacuum chamber. Figure 12 is an embodiment with an excitation coil integrated into the wall of the vacuum chamber. Further, the first embodiment has a total of three excitation coils which are displaced from each other in the plane normal direction of the substrate. [Main component symbol description] 10 Vacuum processing device 12 Vacuum chamber 14 Substrate holder 16 Substrate 18 Substrate holder 20 Substrate 22 Coil 24 Permeable surface section 26 Contact 28 Contact 30 Vacuum chamber 32 Coil 34 Permeable surface section 36 Coil winding 5 -24- 201241879 38 Coil winding 40 Coil 50 Coil 52 Electrical conductor 54 Insulator 56 Coil 57 Coil winding 58 Coil winding 60 Vacuum chamber 62 Coil 66 Insulator 68 Insulator 80 Plasma 100 Substrate spacing
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