201233453 六、發明說明： 【發明所屬之技術領域】 本發明關於由噴嘴將藥液供給至基板表面而進行處理 的液體處理裝置及液體處理方法。 【先前技術】 於半導體製造工程有將藥液供給至基板表面而進行處 理的工程。例如在阻劑圖案形成用之塗布/顯像裝置所設 置之顯像處理裝置之中，在設於形成處理區域之杯部內所 設置之基板保持部將基板予以水平保持，由噴嘴供給藥液 之顯像液而構成。將顯像液供給至基板之後，爲了藉由顯 像液溶解阻劑膜之溶解性部位，而使靜止必要之時間例如 數十秒。 作爲將顯像液塗布於基板的表面之方法，習知者有以 下。 (1) 使具有在涵蓋基板之有效區域之寬度以上之長 度而被形成之吐出口的噴嘴，沿著基板表面掃描之方法。 (2) 使基板旋轉之狀態下，由具有長度尺寸約爲數 公分之縫隙構成之吐出口的噴嘴，吐出顯像液之同時，使 該噴嘴由基板周緣部至中央部移動的方法。 但是，關於塗布/顯像裝置被要求越來越高之作業效 率例如要求進行相當於1小時240片之處理。另外，爲防止 基板之污染，實現裝置之簡單化，而要求抑制元件數。 於專利文獻1揭示，將2個杯部左右並列，於彼等杯部 201233453 之並列兩側設置待機埠，藉由1個顯像液噴嘴對搬入2個杯 部之基板供給顯像液之裝置。另外，該裝置係對應於每一 杯部旋動自如地配置清洗用之純水噴嘴。 另外，於專利文獻2揭示，使顯像液噴嘴待機於2個杯 部中央之構成。 但是，專利文獻1、2並未針對對應於基板種別（批次 )而藥液之供給方法不同之情況加以考慮。另外，於專利 文獻1所示構成中，因爲基板之搬入時序，顯像液噴嘴跨 越靜止顯像中之基板而移動，導致顯像液由顯像液噴嘴滴 落至該基板上而有可能引起顯像缺陷。 〔專利文獻〕 專利文獻1 :日本特開2002-100556號公報：圖1 專利文獻2:日本特開平4-〗18074號公報：圖2 【發明內容】 (發明所欲解決之課題） 本發明係基於上述背景而完成者，目的在於提供可以 抑制藥液用之噴嘴數之同時，可以高的作業效率處理的液 體處理裝置及液體處理方法。 (用以解決課題的手段） 本發明之液體處理裝置，其特徵爲具備： 第1處理區域及第2處理區域，爲使各個基板呈水平配 -6- 201233453 置藉由來自噴嘴之藥液進行處理而互相配置於橫向； 第1個別噴嘴及第2個別噴嘴’對應於彼等第1處理區 域及第2處理區域而分別被個別設置’用於對基板全面供 給藥液； 第1個別噴嘴搬送機構及第2個別噴嘴搬送機構’用於 使彼等第1個別噴嘴及第2個別噴嘴’在待機位置與各處理 區域中之藥液吐出位置之間進行搬送； 共有噴嘴，爲對上述基板供給藥液而被共通使用於上 述第1處理區域及第2處理區域；及 共有噴嘴搬送機構，用於使該共有噴嘴，在待機位置 、上述第1處理區域中之藥液吐出位置、與上述第2處理區 域中之藥液吐出位置之間進行搬送； 上述共有噴嘴，其被各處理區域佔有之時間係較上述 個別噴嘴短。 本發明之液體處理方法，係於液體處理裝置中，該液 體處理裝置具備：使各個基板呈水平配置欲藉由來自噴嘴 之藥液進行處理而配置於左右的第1處理區域及第2處理區 域者；其特徵爲包含： 將一批次之基板交互搬入第1處理區域及第2處理區域 的工程； 使對應於上述第1處理區域被個別設置之第1個別噴嘴 ，由待機位置搬送至該處理區域之上方位置，對上述一批 次之基板之全面供給藥液而進行處理的工程； 使對應於上述第2處理區域被個別設置之第2個別噴嘴 201233453 ，搬送至該處理區域之上方位置，對上述一批次之基板之 全面供給藥液而進行處理的工程； 將另一批次之基板交互搬入上述第1處理區域及第2處 理區域的工程： 使共通使用於上述第1處理區域及第2處理區域的共有 噴嘴，由待機位置搬送至第1處理區域中之藥液吐出位置 ，對上述另一批次之基板供給藥液的工程：及 使上述共有噴嘴搬送至上述第2處理區域中之藥液吐 出位置，對上述另一批次之基板供給藥液的工程； 上述共有噴嘴，其被各處理區域佔有之時間係較上述 個別噴嘴短。 【實施方式】 說明本發明之液體處理裝置適用於針對曝光後之半導 體晶圓（以下稱晶圓）進行顯像處理的顯像處理裝置之實 施形態。該顯像處理裝置，係於角型框體3內於X方向並列 配置2個杯體1〇及杯體20。於圖1，彼等杯體10、20爲求方 便而於1條線之圓被槪略分解圖示，其具體之詳細構造則 圖示於圖2、3。杯體10、20，係連同其周邊構件及周邊機 構而分別構成第1液體處理模組1及第2液體處理模組2。彼 等液體處理模組1、2分別爲同一構成，因此僅說明一方之 液體處理模組1。 於圖2、3，11爲構成基板保持部之旋轉扭盤，可將基 板（例如晶圓W )真空吸附而保持水平。該旋轉吸盤1 1， 201233453 係如圖2所示，介由旋轉軸12而連接於設於下方之旋轉驅 動部之例如旋轉馬達1 3 ’可於保持晶圓W之狀態下於垂直 軸周圍旋轉，亦可以升降。 於顯像處理裝置以包圍保持於旋轉吸盤11之晶圓％的 方式設置杯體1 〇。該杯體〗〇係由外杯10a及內杯構成’ 杯體1 0之上方側設置開口。上述外杯1 〇a，係如圖3所示’ 上部側爲四角形狀’下部側爲圓筒形狀。另外’如圖2所 示，於外杯l〇a之下端部形成段部。上述外杯l〇a可藉由設 於下方之升降部l〇c予以升降。上述內杯10b爲圓筒形狀， 上部側朝內側傾斜。另外，內杯1 〇b，在上述外杯1 0a之升 降時其下端面係頂接於該段部，而被往上方推升。另外， 於圖1，爲避免圖面之複雜而省略外杯l〇a之圖示。另外， 包含載置晶圓W之區域的杯體10、20之上部區域，係構成 處理區域，第1液體處理模組1中之處理區域及第2液體處 理模組2中之處理區域，係分別相當於第1處理區域及第2 處理區域。 在保持於旋轉吸盤11之晶圓W之下方側設置圓形板14 ，於該圓形板14外側設置縱斷面形狀爲山形之傘型導引構 件1 5。前述傘型導引構件1 5，係將由晶圓W溢出掉落之顯 像液或洗淨液導入如後述說明之液體承受部1 6者。該液體 承受部16之縱斷面形狀被形成爲凹型，於圓形板14之外緣 下方涵蓋全周被設爲甜甜圏形狀。於液體承受部16之底面 ，由下方連接著廢液管17。廢液管17(未圖示）被連接於 廢液槽，於其中途設置氣液分離器，進行排氣與廢液之分 -9- 201233453 離。 於顯像處理裝置，如圖2所示，係於圓形板1 4之下方 設置例如3個升降銷18。該升降銷18係藉由連接於該升降 銷18之升降銷升降機構19而升降自如，於晶圓W之搬送時 由下方貫穿圓形板Μ而上升，於未圖示之基板搬送臂部與 旋轉吸盤1 1之間進行晶圓W之搬出入。 第1液體處理模組1，係具備：個別（專用）設於該液 體處理模組1之個別顯像噴嘴4 1，及被鄰接於該液體處理 模組1之第2液體處理模組2所共有之共有顯像噴嘴5。個別 顯像噴嘴41及共有顯像噴嘴5係分別相當於申請專利範圍 之個別噴嘴及共有噴嘴。 個別顯像噴嘴4 1，係如圖1、3所示，被保持於朝Y方 向延伸之噴嘴臂部42。噴嘴臂部42構成爲可藉由噴嘴搬送 機構43移動於X方向，個別顯像噴嘴4 1，係如圖1、3所示 ，在設定於杯體1〇之右側附近位置的待機位置，與對旋轉 吸盤1 1上之晶圓W供給顯像液的顯像液吐出位置之間搬送 。噴嘴搬送機構43，係由延伸於X方向之導引構件44，及 使個別顯像噴嘴4 1沿著該導引構件44移動之例如滾珠螺栓 機構等之驅動機構構成。 如圖1、3所示，共有顯像噴嘴5被保持於延伸於Y方向 之噴嘴臂部52。噴嘴臂部52構成爲可藉由噴嘴搬送機構53 移動於X方向，如圖1、3所示，共有顯像噴嘴5，係在設定 於杯體10與20之中間位置的待機位置，與對旋轉吸盤1 1上 之晶圓W供給顯像液的顯像液吐出位置之間搬送。噴嘴搬 -10- 201233453 送機構53，係由延伸於X方向之導引構件54，及使共有顯 像噴嘴5沿著該導引構件54移動之例如滾珠螺栓機構等之 驅動機構構成。 彼等顯像噴嘴4 1、5，係例如分別被保持於噴嘴臂部 42、52之下方側，但爲說明之方便而於圖1、3描繪成爲分 別位於噴嘴臂部42、52之前端部。另外，如圖2所示，顯 像噴嘴41、5係分別介由可撓性配管45、55連接於顯像液 供給系46、56。顯像液供給系46 ( 56 )係包含顯像液貯存 槽或泵及閥等之供控制機器等。 另外，如圖4所示，噴嘴搬送機構43、53係具備被導 引構件44、54導引之同時，而移動的支柱48、58，於該支 柱48、58使噴嘴臂部42、52藉由未圖示之升降機構可以升 降而被設置。共有顯像噴嘴5之噴嘴臂部52，係較個別顯 像噴嘴41之噴嘴臂部42可以設定在更高位置，因此共有顯 像噴嘴5可以越過個別顯像噴嘴4 1而水平移動。 如圖5所示，個別顯像噴嘴4 1，係朝其前端部使圖5之 Y方向之寬度漸次變小，於其下端面（前端面）設置例如 長度L1爲8〜15 mm，寬度L2爲0.1〜1mm之帶狀之吐出口 402 « 如圖6' 7所示，共有顯像噴嘴5具備：較晶圓W之直 徑更長的噴嘴本體501;連通於該噴嘴本體501內之通液室 而設於該噴嘴本體501之下面側的吐出口 502 ;及收容於吐 出口 502內之緩衝棒503。圖7之吐出口 502描繪爲縫隙狀， 但亦可構成爲使複數孔軋開間隔配列於噴嘴本體5 0 1之長 -11 - 201233453 度方向。吐出口 5 02被設爲覆蓋晶圓W之有效區域（元件 形成區域）之長度尺寸° 個別顯像噴嘴4 1及共有顯像噴嘴5對於藥液之顯像液 之供給方式互爲不同’於進行1片晶圓W之顯像處理中’ 針對被處理區域所佔有之時間（使用時間）加以比較時’ 個別顯像噴嘴41係較共有顯像噴嘴5爲長。針對兩噴嘴41 、5之顯像方式之槪略說明如下，個別顯像噴嘴4 1 ’係旋 轉晶圓W之同時，由晶圓W之周緣至中心部移動而以渦捲 狀進行藥液（顯像液）之塗布，接著，於晶圓w中心部繼 續特定時間之顯像液吐出。共有顯像噴嘴5，係自晶圓W 之一端至另一端進行掃描之同時，將藥液（顯像液）供給 、承載於晶圓W上。 於圖1，6爲洗淨噴嘴，係對被供給有顯像液之晶圓W 上供給例如純水構成之洗淨液，而進行洗淨者。如圖1、3 所示，洗淨噴嘴6被保持於延伸於Y方向之噴嘴臂部62。噴 嘴臂部62構成爲可藉由噴嘴搬送機構63移動於X方向，洗 淨噴嘴6，係如圖1、3所示，在設定於杯體之左側附近位 置的待機位置，與對旋轉吸盤上之晶圓W供給洗淨液的洗 淨液吐出位置之間搬送。噴嘴搬送機構63，係由兼用作爲 上述導引構件44，使洗淨噴嘴6沿著該導引構件44移動之 例如滾珠螺栓機構等之驅動機構構成。另外，如圖2所示 ’洗淨噴嘴6係分別介由可撓性配管65連接於洗淨液供給 系6 6。又’爲能良好進行晶圓w上之顯像液之洗淨處理， 例如於液體處理模組1、2分別設置氣體噴嘴，用於將氮氣 -12- 201233453 等之氣體吐出至晶圓W上亦可。 關於噴嘴搬送機構63，亦於該支柱68使噴嘴臂部62藉 由未圖示之升降機構可以升降而被設置。共有顯像噴嘴5 之噴嘴臂部52，係可以越過洗淨噴嘴6之噴嘴臂部62而移 動。 於各噴嘴41、5及6之待機位置，設置使各噴嘴41、5 及6之前端部被嵌合，具備排液口之噴嘴匯整部47、57及 67 〇 回至圖1、2，於框體3之側面設置搬出入口 31，可藉 由外部之搬送臂部對各液體處理模組1、2進行晶圓W之搬 出入，另外，設置用於開/關各搬出入口 31的柵門（未圖 示）。 圖8表示包含液體處理裝置之塗布/顯像裝置之一部 分構成例，於該例，設置晶圓搬送機構3 03，其包含沿著 主搬送路301移動之移動體3 02，該晶圓搬送機構3 03構成 爲可於垂直軸周圍自由旋轉、自由升降及自由進退。沿著 主搬送路301使4個液體處理模組1、2、1’、2’配置成爲一 列。液體處理模組1’、2 ’係和液體處理模組1、2爲同一構 成。另外，在主搬送路301之中之位於液體處理模組1、2 、Γ、2’之相反側，使複數個此例爲6個加熱模組304沿著 主搬送路301配置。該加熱模組304之群，係包含加熱曝光 後、顯像前之晶圓W的加熱模組，以及加熱顯像後之晶圓 W的加熱模組。晶圓搬送機構3 03，係對液體處理模組1、 2、1 ’、2’以及加熱模組3 04進行晶圓W之搬出入。3 05爲在 -13- 201233453 和其他處理區塊之間進行晶圓W之收授的收授平台。 圖9表示控制顯像處理裝置之各部的控制部7。控制部 7，例如係由CPU71、程式儲存部72所儲存之程式72a、資 料匯整部73等構成之電腦。上述程式72a係依據製程配方 (process recipe)，進行個別顯像噴嘴之顯像液供給系46 、共有顯像噴嘴之顯像液供給系56、洗淨噴嘴之洗淨液供 給系66、個別顯像噴嘴之搬送機構43、共有顯像噴嘴之搬 送機構、洗淨噴嘴之搬送機構63及旋轉馬達13之控制。 參照圖10-26說明上述實施形態之作用。以下各動作 係依據控制部7具備之程式進行。圖10表示藉由外部之晶 圓搬送機構、例如如圖8所示晶圓搬送機構3 03，使某一批 次之基板（晶圓W)被搬入第1處理模組1之旋轉吸盤11之 狀態。晶圓W之搬入動作係藉由晶圓搬送機構3 03與升降 銷18之從動動作而進行。藉由噴嘴搬送機構53使共有顯像 噴嘴5由待機位置移動至晶圓W之一端側，由吐出口 5 02吐 出顯像液之同時，由晶圓W之一端側移動至另一端側’而 使顯像液承載於晶圓W之表面全體。該掃描、塗布之模樣 圖示於圖15、16，圖11表示共有顯像噴嘴5通過晶圓W中 央部之狀態。於圖15、16，D爲顯像液。 承載有顯像液之晶圓W在直至設定時間（例如30秒〜 40秒）經過爲止被靜置之同時，如圖12所示使共有顯像噴 嘴5回至待機位置。設定時間經過後，如圖1 3所示’搬送 機構63使洗淨噴嘴6由待機位置移動至晶圓W中心部之上 方位置，吐出純水之同時，藉旋轉馬達旋轉晶圓w ’藉由 •14- 201233453 離心力量擴散純水而將顯像液由晶圓W上除去（參照圖17 、18)。此情況下，使洗淨噴嘴6之純水之吐出位置由晶 圓W中心部朝周緣移動之同時，於該吐出位置之旋轉方向 下流側由氣體噴嘴噴出氣體而提升洗淨效果亦可。之後， 高速旋轉晶圓W甩乾洗淨液而乾燥之（旋轉乾燥）。 在第1液體處理模組1進行晶圓w之洗淨期間，如圖1 3 所示，將後續之晶圓W搬入第2液體處理模組2之旋轉吸盤 ，同樣藉由共有顯像噴嘴5進行顯像液之承載。另外，於 第2液體處理模組2進行顯像液之承載之後經過靜止顯像所 必要之設定時間之後，如圖1 4所示，藉由個別設於第2液 體處理模組2之洗淨噴嘴6同樣進行基板表面之洗淨。又， 於此時點，第1液體處理模組1中之晶圓W洗淨已經終了， 被搬出至外部。因爲液體處理模組之數、或其他處理模組 之處理時間或裝置之佈局等，晶圓之搬入間隔有所變化， 但此例中，共有顯像噴嘴5由待機位置移動至晶圓W上進 行顯像液之掃描塗布，回至原來之待機位置爲止之一連串 時間，亦即包含待機位置與晶圓W上之間之搬送時間在內 的，第1液體處理模組1所佔有之時間，係較晶圓搬送機構 對晶圓W之搬入間隔短。 上述說明係使用共有顯像噴嘴5進行處理之情況，以 下說明針對和上述批次爲不同的另一批次之基板’藉由個 別顯像噴嘴41進行顯像處理之情況。 圖19表示藉由外部之晶圓搬送機構’使上述另一批次 之基板、亦即晶圓W搬入第1液體處理模組1之旋轉吸盤1 1 -15- 201233453 之狀態。藉由噴嘴搬送機構43使個別顯像噴嘴41由待機位 置移動至晶圓W之一端側，使旋轉吸盤1 1例如以5 00rpm旋 轉。個別顯像噴嘴4 1之水平方向之朝向，可以事先設爲使 縫隙狀之吐出口 402之長度方向成爲和連結晶圓W之周緣 部與中心部之線一致。由個別顯像噴嘴4吐出顯像液之同 時，使其之吐出位置由晶圓W之周緣移動至中心部，而以 帶狀供給顯像液，使顯像液之承載成爲渦捲狀。如圖24所 示爲處理之模式，另外，圖20表示個別顯像噴嘴4 1到達晶 圓W中心部之狀態。 之後，使晶圓W之旋轉數降低至例如lOOrpm而使顯像 液緩緩擴散至周緣，於此狀態下繼續藉由個別顯像噴嘴4 1 將顯像液供給至晶圓W中心部（圖25 )。之後，繼續供給 顯像液並使晶圓W之旋轉數上升至例如200 Orpm，停止該 顯像液之供給之同時，使晶圓W之旋轉數降低至不會因爲 表面張力而使顯像液由晶圓W之周緣部被吸回、而且在保 持顯像液之承載之程度的低旋轉數，將此狀態維持例如約 4 0 秒（圖 2 6 )。 另外，在藉由第1液體處理模組1進行顯像處理期間， 將後續之晶圓W搬入第2液體處理模組2之旋轉吸盤，如圖 2 1所示，該模組1之個別顯像噴嘴4 1藉由搬送機構43由待 機位置被搬送至晶圓W之一端側。於第2液體處理模組2對 該晶圓W進行和第1液體處理模組1說明之顯像處理同樣之 處理。此時，於第1液體處理模組1已經經過供給顯像液後 之靜置時間，如圖2 2所示，和上述說明之藉由共有顯像噴 -16- 201233453 嘴5之顯像處理後之洗淨處理同樣地，藉由洗淨噴嘴6進行 洗淨除去晶圓W上之顯像液，另外，進行旋轉乾燥。 於第1液體處理模組1結束晶圓W之一連串之處理後該 晶圓W被搬出，另外，於第2液體處理模組2結束顯像處理 之後，藉由洗淨噴嘴6進行晶圓W之洗淨，另外’進行旋 轉乾燥（圖23)。 如上述說明，本實施形態中可以實施使用共有顯像噴 嘴5進行顯像處理的方式，及使用個別顯像噴嘴41進行顯 像處理的方式，但是使用個別顯像噴嘴4 1的方式’即使在 阻劑膜之疏水性高之情況下，亦可進行均勻之顯像，此爲 其優點。因此阻劑膜之疏水性低之情況下，和使用個別顯 像噴嘴4 1之情況下比較，顯像液之使用量變爲較少而較爲 有利，關於選擇哪一方式，可依據處理時間、阻劑膜之種 別、顯像液成本等而予以決定》 依據上述實施形態，係準備2種類之顯像噴嘴而可以 對應於2種類之顯像處理方式，針對該兩種方式之中之噴 嘴佔有時間較短者所使用之顯像噴嘴，將其對應於各第1 液體處理模組1、2予以個別設置，而針對噴嘴佔有時間較 長者所使用之顯像噴嘴，則使其被第1液體處理模組1、2 共有化。因此，就抑制噴嘴數之觀點而言，噴嘴之共有化 爲有利者，另外，針對佔有時間長的噴嘴則予以個別化， 因此晶圓W依序被搬入第1液體處理模組1及第2液體處理 模組2時即使搬入時間短，亦可對搬入之晶圓W立即開始 處理，可維持高的作業效率。 -17- 201233453 以下列舉本發明之變形例。 顯像方式不限定於上述方式，例如使共有顯像噴嘴5 位於接近晶圓W之表面之位置、例如約分離1 mm之位置， 而且設定於晶圓W之直徑上，吐出顯像液之同時，使晶圓 W旋轉18 0度而實施液體承載的方式亦可。 另外，於上述實施形態中，共有顯像噴嘴5及個別顯 像噴嘴41均爲不限定於供給顯像液者，共有顯像噴嘴5對 晶圓W之表面供給有機溶媒，個別顯像噴嘴41對晶圓W供 給顯像液亦可。此情況下，使晶圓W之表面全面事先以有 機溶媒潤溼之狀態下，可達成顯像液容易擴散之效果。另 外，個別顯像噴嘴4 1，可爲和上述實施型態之個別顯像噴 嘴41同一者，或和上述實施型態之共有顯像噴嘴5同一者 。另外，個別顯像噴嘴亦可對應於先前2種類之顯像方式 而設置2個顯像噴嘴。 另外，共有顯像噴嘴5之待機位置，設定於第1液體處 理模組1與第2液體處理模組2之間時，如此則，和位於彼 等液體處理模組1、2之並列之端部之情況下比較，不會跨 越顯像中之晶圓W而移動，顯像液不會掉落顯像中之晶圓 W。另外，噴嘴41、5或噴嘴臂部42、52亦不會受杯體內 環境污染，因而有利。但是，共有顯像噴嘴5之待機位置 亦可設於此一位置。另外，例如亦可取代個別顯像噴嘴4 1 之直線移動，改爲在待機位置與處理位置之間旋轉移動。 以下說明共有顯像噴嘴5之構成之其他例。圖27表示 設置2個共有顯像噴嘴5 A、5 B之例。藉由個別之導引構件 -18- 201233453 54A、54B針對分別保持共有顯像噴嘴5A ' 5B之噴嘴臂部 52A、52B進行搬送。彼等導引構件54A、54B係於第1液體 處理模組1與第2液體處理模組2之並列之單側平行配置。 53A、53B爲噴嘴搬送機構，如圖4所示，噴嘴搬送機構 53A、53B，係使噴嘴臂部52A、52B自由升降於個別之支 柱58A、58B而設置。另外，噴嘴臂部52B較噴嘴臂部52A 可移動至更高位置，對第1液體處理模組1使用共有顯像噴 嘴5B時，共有顯像噴嘴5B係追過共有顯像噴嘴5A而移動 。另外，對第2液體處理模組2使用共有顯像噴嘴5A時，共 有顯像噴嘴5B係退避至位於第2液體處理模組2之右側的待 機位置9 (退避位置）。如圖27所示之共有顯像噴嘴5A、 5B之位置爲待機位置，雖未圖示而於共有顯像噴嘴5A、 5B之下方分別設置待機匯整部。共有顯像噴嘴5A、5B之 使用例可爲，一方爲吐出混合有界面活性劑之顯像液者， 另一方爲吐出未混合界面活性劑之顯像液者。 圖28表示於圖27之實施形態之中，使導引構件54A、 5 4B介由第1液體處理模組1及第2液體處理模組2之並列而 呈對向配置之構成例。圖29表示使導引構件54A、54B共通 化之構成例，8、9分別爲共有顯像噴嘴5A、5B之退避位置 〇 以上說明顯像處理裝置作爲液體處理裝置之例，但亦 可適用於晶圓W等之基板之葉片式洗淨裝置。此情況下之 例可爲，作爲個別藥液噴嘴，係設爲吐出藥液濃度小的洗 淨液者，作爲共有藥液噴嘴，則設爲吐出藥液濃度大於上 -19- 201233453 述濃度的洗淨液者，由共有藥液噴嘴僅於第1時間吐出藥 液進行基板表面之洗淨，之後，由個別藥液噴嘴僅於較第 1時間短的第2時間吐出藥液進行基板表面之洗淨。 (發明效果） 本發明係藉由對應於第1處理區域及第2處理區域而分 別被個別設置的第1個別噴嘴及第2個別噴嘴，對基板全面 供給藥液而進行處理，另外，欲藉由彼等個別噴嘴進行被 各處理區域佔有之時間較短的液體處理，而使用被第1處 理區域及第2處理區域共用化之共有噴嘴。因此，可抑制 藥液用噴嘴數之同時，可進行高的作業效率之處理。 【圖式簡單說明】 圖1表示本發明實施形態之液體處理裝置全體之槪略 平面圖。 圖2表示上述實施形態之杯體內部之縱斷側面圖。 圖3表示上述液體處理裝置之一部分之平面圖。 圖4表示個別顯像噴嘴及共有顯像噴嘴之縱斷正面圖 圖5表示個別顯像噴嘴之斜視圖。 圖6表示共有顯像噴嘴之縱斷面圖。 圖7表示共有顯像噴嘴之前端部之平面圖。 圖8表示將液體處理裝置組裝於塗布/顯像處理裝置 之處理方塊之例之平面圖。 -20- 201233453 圖9表示本發明實施形態之控制部之構成圖。 圖10表示液體處理裝置之作用之槪略平面圖。 圖11表示液體處理裝置之作用之槪略平面圖。 圖12表示液體處理裝置之作用之槪略平面圖。 圖13表示液體處理裝置之作用之槪略平面圖。 圖14表示液體處理裝置之作用之槪略平面圖。 圖15表示液體處理裝置之作用之槪略側面圖。 圖16表示液體處理裝置之作用之槪略側面圖。 圖17表示液體處理裝置之作用之槪略縱斷側面圖。 圖18表示液體處理裝置之作用之槪略側面圖。 圖19表示液體處理裝置之作用之槪略平面圖》 圖20表示液體處理裝置之作用之槪略平面圖。 圖21表示液體處理裝置之作用之槪略平面圖。 圖22表示液體處理裝置之作用之槪略平面圖。 圖23表示液體處理裝置之作用之槪略平面圖。 圖24表示液體處理裝置之作用之槪略側面圖。 圖25表示液體處理裝置之作用之槪略側面圖。 圖26表示液體處理裝置之作用之槪略側面圖。 圖2 7表示本發明另一實施形態之一例之平面圖。 圖2 8表示本發明另一實施形態之一例之平面圖。 圖29表示本發明另一實施形態之一例之平面圖。 【主要元件符號說明】 W :晶圓 -21 - 201233453 D ： 1 ： 2 ： 3 ： 41 ： 5 ： 6 ： 7 ： 10、 11: 13: 17: 18: 42、 43 ' 44、 45、 46、 66 : 47、 10a 10b 48、 501 顯像液 第1液體處理模組 第2液體處理模組 框體 個別顯像噴嘴 共有顯像噴嘴 洗淨噴嘴 控制部 20 :杯體 旋轉吸盤 旋轉馬達 廢液管 升降銷 52 、62 : 噴 嘴 臂 部 53 ' 63 ： 噴 嘴 搬 送機構 54 、64 : 導 引 構 件 5 5 、65 : 配 管 56 :顯像 液 供 給 系 洗ί 爭液供 給 系 57 、67 : 匯 整 部 外 杯 內 杯 58 :支柱 噴 嘴本體 -22 201233453 5 0 2 :吐出口 5 03 :緩衝棒 1 ’、2 ’ ：液體處理模組 303 :晶圓搬送機構 3 04 :加熱模組 3 0 5 :收授平台201233453 6. OBJECT OF THE INVENTION: 1. Field of the Invention The present invention relates to a liquid processing apparatus and a liquid processing method for processing a chemical liquid supplied from a nozzle to a surface of a substrate. [Prior Art] In the semiconductor manufacturing engineering, there is a process of supplying a chemical liquid to the surface of a substrate for processing. For example, in the development processing apparatus provided in the coating/development apparatus for forming a resist pattern, the substrate holding portion provided in the cup portion formed in the processing region holds the substrate horizontally, and the liquid medicine is supplied from the nozzle. It is composed of a developing solution. After the developer is supplied to the substrate, the time necessary for the stabilization of the resist film to dissolve the resist film by the developing solution is, for example, several tens of seconds. As a method of applying a developing solution to the surface of a substrate, those skilled in the art may have the following. (1) A method of scanning a nozzle having a discharge port formed to a length greater than a width of an effective area of a substrate, along the surface of the substrate. (2) A method of moving the nozzle from the peripheral edge portion of the substrate to the central portion while discharging the developing liquid from the nozzle having the discharge port having a slit having a length of about several centimeters in a state where the substrate is rotated. However, the application efficiency of the coating/developing apparatus which is required to be higher and higher is required to be, for example, a treatment equivalent to 240 sheets per hour. Further, in order to prevent contamination of the substrate, the simplification of the device is required, and the number of components is required to be suppressed. Patent Document 1 discloses a device in which two cup portions are arranged side by side, and standby devices are provided on both sides of the cup portions 201233453, and a developing liquid nozzle is used to supply the developing liquid to the substrates of the two cup portions. . Further, the apparatus is configured to arbitrarily arrange a pure water nozzle for cleaning corresponding to each cup portion. Further, Patent Document 2 discloses a configuration in which a developing liquid nozzle is placed in the center of two cup portions. However, Patent Documents 1 and 2 do not consider the case where the supply method of the chemical liquid differs depending on the substrate type (batch). Further, in the configuration shown in Patent Document 1, the developer liquid nozzle moves over the substrate in the stationary development due to the loading timing of the substrate, and the developer liquid is dropped onto the substrate by the developing liquid nozzle, which may cause Imaging defects. [Patent Document] Patent Document 1: Japanese Laid-Open Patent Publication No. 2002-100556 (Patent Document 2) Japanese Patent Application Laid-Open No. Hei No. Hei No. Hei. In view of the above background, it is an object of the invention to provide a liquid processing apparatus and a liquid processing method which can suppress the number of nozzles for a chemical liquid and can be processed with high work efficiency. (Means for Solving the Problem) The liquid processing apparatus according to the present invention is characterized in that the first processing region and the second processing region are provided so that the respective substrates are horizontally arranged -6-201233453 by the liquid medicine from the nozzle The first individual nozzles and the second individual nozzles are individually provided with respect to the first processing region and the second processing region, respectively, for supplying the chemical solution to the entire substrate, and the first individual nozzles are transported. The mechanism and the second individual nozzle transport mechanism 'for transporting the first individual nozzles and the second individual nozzles ' between the standby position and the chemical liquid discharge position in each of the processing regions; and the nozzles for supplying the substrates The chemical solution is commonly used in the first processing region and the second processing region; and a common nozzle transport mechanism for causing the shared nozzle, the chemical liquid discharge position in the standby position and the first processing region, and the (2) Transfer between the chemical solution discharge positions in the treatment area; the shared nozzles are occupied by the respective processing areas for a shorter period of time than the individual nozzles. The liquid processing method of the present invention is a liquid processing apparatus including: a first processing region and a second processing region which are disposed such that each substrate is horizontally disposed to be processed by a chemical liquid from a nozzle. The method includes: transferring a batch of substrates into the first processing area and the second processing area; and transferring the first individual nozzles corresponding to the first processing area to the first position a process of processing the chemical solution for the entire batch of the substrate in a position above the processing area; and transporting the second individual nozzle 201233453 corresponding to the second processing region to the upper portion of the processing region a process of processing the entire supply of the chemical solution of the one batch of the substrate; and transferring the other batch of the substrate into the first processing region and the second processing region: common use in the first processing region And the common nozzle of the second processing area is transported from the standby position to the chemical liquid discharge position in the first processing area, and the other batch is The substrate is supplied with the chemical liquid: and the common nozzle is transported to the chemical liquid discharge position in the second processing region, and the chemical liquid is supplied to the substrate of the other batch; the shared nozzle is occupied by each processing region. The time is shorter than the individual nozzles described above. [Embodiment] The liquid processing apparatus of the present invention is applied to an embodiment of a development processing apparatus that performs development processing on an exposed semiconductor wafer (hereinafter referred to as a wafer). In the development processing apparatus, two cup bodies 1 and a cup body 20 are arranged side by side in the X direction in the corner frame 3. In Fig. 1, the cups 10, 20 are simply exploded in a circle of one line for convenience, and the detailed structure is shown in Figs. The cups 10 and 20 constitute the first liquid processing module 1 and the second liquid processing module 2 together with the peripheral members and peripheral mechanisms thereof. Since the liquid processing modules 1 and 2 have the same configuration, only one of the liquid processing modules 1 will be described. 2, 3, and 11 are rotary torsion plates constituting the substrate holding portion, and the substrate (e.g., wafer W) can be vacuum-adsorbed to maintain the level. As shown in FIG. 2, the rotary chuck 1 1, 201233453 is connected to a rotary drive unit provided below via a rotary shaft 12, for example, a rotary motor 13' can rotate around the vertical axis while holding the wafer W. It can also be raised and lowered. The developing device is provided with a cup body 1 so as to surround the wafer % held by the spin chuck 11. The cup body is provided with an opening formed on the upper side of the cup body 10 by the outer cup 10a and the inner cup. The outer cup 1 〇 a is as shown in Fig. 3 'the upper side has a square shape' and the lower side has a cylindrical shape. Further, as shown in Fig. 2, a segment is formed at the lower end portion of the outer cup 10a. The outer cup 10a can be raised and lowered by the lower portion l〇c provided below. The inner cup 10b has a cylindrical shape, and the upper side is inclined toward the inner side. Further, the inner cup 1 〇b, when the outer cup 10a is raised or lowered, its lower end surface is in contact with the section, and is pushed up. In addition, in FIG. 1, the illustration of the outer cup l〇a is omitted in order to avoid the complexity of the drawing. Further, the upper portion of the cups 10 and 20 including the region in which the wafer W is placed constitutes a processing region, and the processing region in the first liquid processing module 1 and the processing region in the second liquid processing module 2 are It corresponds to the first processing area and the second processing area, respectively. A circular plate 14 is provided on the lower side of the wafer W held by the spin chuck 11, and an umbrella-shaped guide member 15 having a mountain shape in a vertical cross section is provided outside the circular plate 14. The umbrella guide member 15 introduces the developer liquid or the cleaning liquid that has been dropped by the wafer W into the liquid receiving portion 16 which will be described later. The longitudinal shape of the liquid receiving portion 16 is formed into a concave shape, and the entire circumference of the outer periphery of the circular plate 14 is covered with a sweet-sweet shape. The waste liquid pipe 17 is connected to the bottom surface of the liquid receiving portion 16 from below. The waste liquid pipe 17 (not shown) is connected to the waste liquid tank, and a gas-liquid separator is disposed in the middle thereof to separate the exhaust gas and the waste liquid -9-201233453. In the development processing apparatus, as shown in Fig. 2, for example, three lift pins 18 are provided below the circular plate 14. The lift pin 18 is lifted and lowered by the lift pin lifting and lowering mechanism 19 connected to the lift pin 18, and is raised by a circular plate 下方 from below when the wafer W is transported, and is transported to the substrate transfer arm (not shown). The wafer W is moved in and out between the spin chucks 1 1 . The first liquid processing module 1 includes an individual (dedicated) individual developing nozzles 4 1 disposed in the liquid processing module 1 and a second liquid processing module 2 adjacent to the liquid processing module 1 A total of common imaging nozzles 5 are available. The individual developing nozzles 41 and the common developing nozzles 5 correspond to individual nozzles and common nozzles in the patent application, respectively. The individual developing nozzles 4 1, as shown in Figs. 1 and 3, are held by the nozzle arm portion 42 extending in the Y direction. The nozzle arm portion 42 is configured to be movable in the X direction by the nozzle transport mechanism 43, and the individual developing nozzles 4 1, as shown in Figs. 1 and 3, are placed at a standby position at a position near the right side of the cup 1〇, and The developing liquid discharge position for supplying the developing liquid to the wafer W on the rotary chuck 1 is transported. The nozzle transport mechanism 43 is constituted by a guide member 44 extending in the X direction and a drive mechanism such as a ball screw mechanism that moves the individual development nozzles 4 along the guide member 44. As shown in Figs. 1 and 3, the common development nozzle 5 is held by the nozzle arm portion 52 extending in the Y direction. The nozzle arm portion 52 is configured to be movable in the X direction by the nozzle transport mechanism 53, and as shown in Figs. 1 and 3, the development nozzle 5 is shared, and is placed at a standby position set between the cups 10 and 20, and The wafer W on the spin chuck 1 is transported between the developing liquid discharge positions of the developing liquid. Nozzle transfer -10- 201233453 The feed mechanism 53 is constituted by a guide member 54 extending in the X direction and a drive mechanism such as a ball screw mechanism that moves the common development nozzle 5 along the guide member 54. The developing nozzles 4 1 and 5 are held, for example, on the lower side of the nozzle arm portions 42 and 52, respectively, but are depicted in the front ends of the nozzle arm portions 42 and 52, respectively, in FIGS. . Further, as shown in Fig. 2, the developing nozzles 41 and 5 are connected to the developing liquid supply systems 46 and 56 via flexible pipes 45 and 55, respectively. The developing liquid supply system 46 ( 56 ) includes a developing solution storage tank, a control device for pumps and valves, and the like. Further, as shown in Fig. 4, the nozzle transport mechanisms 43 and 53 are provided with the support posts 48 and 58 which are guided by the guide members 44 and 54 and which are moved by the nozzle arms 42 and 52. It can be installed up and down by a lifting mechanism (not shown). The nozzle arm portion 52 of the common developing nozzle 5 can be set at a higher position than the nozzle arm portion 42 of the individual developing nozzle 41, so that the common developing nozzle 5 can be horizontally moved beyond the individual developing nozzles 41. As shown in Fig. 5, the individual developing nozzles 41 are gradually reduced in width in the Y direction toward the front end portion, and are disposed on the lower end surface (front end surface), for example, having a length L1 of 8 to 15 mm and a width L2. The strip-shaped discharge port 402 of 0.1 to 1 mm is as shown in Fig. 6'7, the common development nozzle 5 is provided with a nozzle body 501 which is longer than the diameter of the wafer W, and communicates with the liquid in the nozzle body 501. The discharge port 502 provided on the lower surface side of the nozzle body 501 and the buffer rod 503 housed in the discharge port 502. The discharge port 502 of Fig. 7 is depicted as a slit shape, but may be arranged such that the plurality of holes are spaced apart from each other in the direction of the length -11 - 201233453 of the nozzle body 50. The discharge port 5 02 is set to cover the length of the effective area (element forming region) of the wafer W. The supply modes of the imaging liquid for the chemical liquid are different for the individual developing nozzles 4 1 and the common developing nozzles 5 When the time (the use time) occupied by the processed area is compared in the development processing of one wafer W, the individual development nozzles 41 are longer than the common development nozzles 5. The development method of the two nozzles 41 and 5 will be described as follows. The individual developing nozzles 4 1 ' rotate the wafer W while moving from the periphery to the center of the wafer W to perform the liquid medicine in a spiral shape ( The application of the developer liquid is followed by the discharge of the developer liquid for a predetermined period of time at the center of the wafer w. The common development nozzle 5 supplies and carries a chemical liquid (developing liquid) onto the wafer W while scanning from one end to the other end of the wafer W. In Fig. 1, reference numeral 6 denotes a cleaning nozzle for supplying a cleaning liquid composed of, for example, pure water to a wafer W to which a developing liquid is supplied, and to perform cleaning. As shown in FIGS. 1 and 3, the cleaning nozzle 6 is held by the nozzle arm portion 62 extending in the Y direction. The nozzle arm portion 62 is configured to be movable in the X direction by the nozzle transport mechanism 63, and to clean the nozzle 6, as shown in Figs. 1 and 3, at a standby position set at a position near the left side of the cup body, and on the rotary suction cup. The wafer W is transported between the cleaning liquid discharge positions of the cleaning liquid. The nozzle transport mechanism 63 is constituted by a drive mechanism such as a ball screw mechanism that also serves as the guide member 44 and moves the cleaning nozzle 6 along the guide member 44. Further, as shown in Fig. 2, the "washing nozzles 6" are connected to the cleaning liquid supply system 6 via flexible pipes 65, respectively. Further, in order to perform the cleaning process of the developing solution on the wafer w, for example, a gas nozzle is provided in each of the liquid processing modules 1 and 2 for discharging a gas such as nitrogen-12-201233453 onto the wafer W. Also. In the nozzle transport mechanism 63, the nozzle arm portion 62 is also provided in the support post 68 so as to be movable up and down by an elevating mechanism (not shown). The nozzle arm portion 52 of the common developing nozzle 5 can be moved beyond the nozzle arm portion 62 of the washing nozzle 6. At the standby positions of the nozzles 41, 5, and 6, the front end portions of the nozzles 41, 5, and 6 are fitted, and the nozzle collecting portions 47, 57, and 67 having the liquid discharge ports are bypassed to FIGS. The carry-out port 31 is provided on the side surface of the casing 3, and the wafer W can be carried in and out of the liquid processing modules 1 and 2 by the external transfer arm, and the grid for opening/closing the respective carry-out ports 31 is provided. Door (not shown). 8 shows an example of a configuration of a part of a coating/developing device including a liquid processing apparatus. In this example, a wafer transfer mechanism 303 including a moving body 322 moving along the main transfer path 301, the wafer transfer mechanism is provided. 3 03 is configured to freely rotate around the vertical axis, freely move up and down, and advance and retreat freely. The four liquid processing modules 1, 2, 1', and 2' are arranged in a row along the main transport path 301. The liquid processing modules 1', 2' are constructed in the same configuration as the liquid processing modules 1, 2. Further, in the main transport path 301, on the opposite side of the liquid processing modules 1, 2, Γ, and 2', a plurality of six heating modules 304 are disposed along the main transport path 301. The group of the heating modules 304 includes a heating module for heating the wafer W after exposure and development, and a heating module for heating the developed wafer W. The wafer transfer mechanism 303 transfers the wafer W to and from the liquid processing modules 1, 2, 1', 2' and the heating module 304. 3 05 is the receiving platform for the wafer W between -13- 201233453 and other processing blocks. Fig. 9 shows a control unit 7 that controls each unit of the development processing device. The control unit 7 is, for example, a computer composed of a CPU 71, a program 72a stored in the program storage unit 72, a data collecting unit 73, and the like. The program 72a performs a development liquid supply system 46 for individual development nozzles, a development liquid supply system 56 for a common development nozzle, a cleaning liquid supply system for the cleaning nozzles 66, and individual display systems in accordance with a process recipe. The nozzle-like transport mechanism 43, the transport mechanism that shares the development nozzle, the transport mechanism 63 of the cleaning nozzle, and the control of the rotary motor 13. The action of the above embodiment will be described with reference to Figs. The following operations are performed in accordance with the program included in the control unit 7. FIG. 10 shows that a substrate (wafer W) of a certain batch is carried into the spin chuck 11 of the first processing module 1 by an external wafer transfer mechanism, for example, the wafer transfer mechanism 303 shown in FIG. status. The loading operation of the wafer W is performed by the follow-up operation of the wafer transfer mechanism 303 and the lift pin 18. The nozzle developing mechanism 53 moves the common developing nozzle 5 from the standby position to the one end side of the wafer W, and discharges the developing liquid from the discharge port 502 while moving from one end side to the other end side of the wafer W. The developing solution is carried on the entire surface of the wafer W. The scanning and coating patterns are shown in Figs. 15 and 16, and Fig. 11 shows a state in which the common developing nozzle 5 passes through the central portion of the wafer W. In Figures 15 and 16, D is a developing solution. The wafer W carrying the developing liquid is allowed to stand until the set time (for example, 30 seconds to 40 seconds) elapses, and the common developing nozzle 5 is returned to the standby position as shown in Fig. 12 . After the set time elapses, the transport mechanism 63 moves the cleaning nozzle 6 from the standby position to the upper position of the center portion of the wafer W, and discharges the pure water while rotating the wafer w' by the rotary motor. • 14- 201233453 Centrifugal forces diffuse pure water and remove the developer from the wafer W (see Figures 17 and 18). In this case, the discharge position of the pure water of the cleaning nozzle 6 is moved from the center portion of the wafer W toward the periphery, and the gas is ejected from the gas nozzle on the downstream side in the rotation direction of the discharge position to enhance the cleaning effect. Thereafter, the wafer W is dried at a high speed and dried (rotated dry). During the cleaning of the wafer w by the first liquid processing module 1, as shown in FIG. 13, the subsequent wafer W is carried into the rotating chuck of the second liquid processing module 2, and also by the common developing nozzle 5 Carrying the imaging liquid. In addition, after the second liquid processing module 2 performs the setting time necessary for the stationary development after the development of the developing liquid, as shown in FIG. 14 , it is separately cleaned by the second liquid processing module 2 . The nozzle 6 also cleans the surface of the substrate. Moreover, at this point, the wafer W in the first liquid processing module 1 is completely washed and carried out to the outside. The wafer loading interval varies depending on the number of liquid processing modules or the processing time of other processing modules or the layout of the device. However, in this example, the common developing nozzle 5 is moved from the standby position to the wafer W. a time period in which the first liquid processing module 1 is occupied by scanning and coating the developing solution and returning to the original standby position for a series of times, that is, including the transfer time between the standby position and the wafer W. The wafer loading interval is shorter than the wafer transfer mechanism. The above description is for the case where the processing is performed using the common developing nozzle 5, and the case where the developing process is performed by the individual developing nozzles 41 for the other substrate of the same batch as the above-described batch will be described. Fig. 19 shows a state in which the other batch of substrates, i.e., the wafer W, is carried into the spin chucks 1 1 -15 to 201233453 of the first liquid processing module 1 by the external wafer transfer mechanism. The individual developing nozzles 41 are moved from the standby position to the one end side of the wafer W by the nozzle transport mechanism 43, and the spin chuck 1 1 is rotated, for example, at 500 rpm. The direction of the horizontal direction of the individual developing nozzles 4 1 may be such that the longitudinal direction of the slit-shaped discharge port 402 coincides with the line connecting the peripheral portion of the wafer W to the center portion. While the developing liquid is ejected from the individual developing nozzles 4, the discharge position is moved from the periphery of the wafer W to the center portion, and the developing liquid is supplied in a strip shape so that the load of the developing liquid becomes a spiral shape. The mode of processing is shown in Fig. 24, and Fig. 20 shows a state in which the individual developing nozzles 41 reach the center portion of the wafer W. Thereafter, the number of revolutions of the wafer W is lowered to, for example, 100 rpm, and the developing liquid is gradually diffused to the periphery. In this state, the developing liquid is continuously supplied to the center portion of the wafer W by the individual developing nozzles 4 1 (Fig. 25). Thereafter, the supply of the developing liquid is continued, and the number of rotations of the wafer W is raised to, for example, 200 Orpm, and the supply of the developing liquid is stopped, and the number of rotations of the wafer W is lowered to prevent the developing liquid from being caused by the surface tension. The state is maintained by the peripheral portion of the wafer W and the number of rotations of the developer liquid is maintained, and this state is maintained, for example, at about 40 seconds (Fig. 26). In addition, during the development process by the first liquid processing module 1, the subsequent wafer W is carried into the rotary chuck of the second liquid processing module 2, as shown in FIG. The nozzle 41 is transported from the standby position to the one end side of the wafer W by the transport mechanism 43. The second liquid processing module 2 performs the same processing as the development processing described in the first liquid processing module 1 on the wafer W. At this time, after the first liquid processing module 1 has passed the supply time for supplying the developing liquid, as shown in FIG. 22, and the above-described development processing of the nozzle 5 by the common development jet-16-201233453 In the same manner as the subsequent washing treatment, the cleaning liquid is removed by the cleaning nozzle 6 to remove the developing liquid on the wafer W, and spin drying is performed. After the first liquid processing module 1 finishes the process of one of the wafers W, the wafer W is carried out, and after the second liquid processing module 2 completes the development process, the wafer W is cleaned by the cleaning nozzle 6. Wash it and additionally 'rotate dry (Figure 23). As described above, in the present embodiment, the method of performing development processing using the common development nozzle 5 and the method of performing development processing using the individual development nozzles 41 can be performed, but the method of using the individual development nozzles 41 is even In the case where the hydrophobicity of the resist film is high, uniform development can be performed, which is an advantage. Therefore, in the case where the hydrophobicity of the resist film is low, it is advantageous to use a smaller amount of the developing liquid than in the case of using the individual developing nozzles 41, and depending on the processing time, depending on the processing time, According to the above embodiment, two kinds of development nozzles are prepared, and two types of development processing methods can be provided, and nozzles among the two types are occupied. The developing nozzles used for the shorter time are individually provided for the respective first liquid processing modules 1 and 2, and the developing nozzles used for the longer nozzles are used for the first liquid. The processing modules 1 and 2 are shared. Therefore, from the viewpoint of suppressing the number of nozzles, it is advantageous to share the nozzles, and the nozzles having a long occupation time are individualized. Therefore, the wafers W are sequentially carried into the first liquid processing module 1 and the second. In the liquid processing module 2, even if the loading time is short, the wafer W to be loaded can be immediately processed, and high work efficiency can be maintained. -17- 201233453 A modification of the present invention is listed below. The development method is not limited to the above-described embodiment. For example, the common development nozzle 5 is placed at a position close to the surface of the wafer W, for example, at a position separated by about 1 mm, and is set on the diameter of the wafer W to discharge the developing liquid. A method of performing liquid carrying by rotating the wafer W by 180 degrees is also possible. Further, in the above-described embodiment, the common development nozzle 5 and the individual development nozzles 41 are not limited to the supply of the developer liquid, and the development nozzle 5 supplies the organic solvent to the surface of the wafer W, and the individual development nozzles 41 are provided. It is also possible to supply the developer W to the wafer W. In this case, the effect of the developer liquid being easily diffused can be achieved in a state where the surface of the wafer W is completely wetted by the organic solvent in advance. Further, the individual development nozzles 4 1 may be the same as the individual development nozzles 41 of the above-described embodiment or the same as the common development nozzles 5 of the above-described embodiment. Further, the individual development nozzles may be provided with two development nozzles in accordance with the previous two types of development methods. Further, when the standby position of the developing nozzle 5 is set between the first liquid processing module 1 and the second liquid processing module 2, the side of the liquid processing modules 1 and 2 is juxtaposed. In the case of the part, it does not move across the wafer W in the development, and the developer liquid does not drop the wafer W in the development. Further, the nozzles 41, 5 or the nozzle arm portions 42, 52 are also not contaminated by the environment inside the cup, which is advantageous. However, the standby position of the common developing nozzle 5 can also be set at this position. Further, for example, instead of linear movement of the individual developing nozzles 4 1 , it is also possible to rotationally move between the standby position and the processing position. Other examples of the configuration of the common development nozzle 5 will be described below. Fig. 27 shows an example in which two common development nozzles 5 A and 5 B are provided. The nozzle arm portions 52A and 52B that hold the common development nozzles 5A to 5B are transported by the individual guide members -18-201233453 54A and 54B. The guide members 54A and 54B are arranged in parallel with one side of the first liquid processing module 1 and the second liquid processing module 2 in parallel. 53A and 53B are nozzle transfer mechanisms. As shown in Fig. 4, the nozzle transport mechanisms 53A and 53B are provided such that the nozzle arm portions 52A and 52B are freely moved up and down to the individual posts 58A and 58B. Further, when the nozzle arm portion 52B is moved to a higher position than the nozzle arm portion 52A, and the common development nozzle 5B is used for the first liquid processing module 1, the common development nozzle 5B moves along the common development nozzle 5A. When the common developing nozzle 5A is used for the second liquid processing module 2, the common developing nozzle 5B is retracted to the standby position 9 (retracted position) located on the right side of the second liquid processing module 2. The position of the common development nozzles 5A and 5B shown in Fig. 27 is a standby position, and a standby take-up unit is provided below each of the common development nozzles 5A and 5B, although not shown. The use of the common developing nozzles 5A and 5B may be one in which one of the developing liquids in which the surfactant is mixed and the other is the developing liquid in which the unmixed surfactant is discharged. Fig. 28 is a view showing an example of a configuration in which the guide members 54A and 54B are arranged in a direction in which the first liquid processing module 1 and the second liquid processing module 2 are arranged in parallel in the embodiment of Fig. 27. Fig. 29 shows an example of a configuration in which the guide members 54A and 54B are common, and 8 and 9 are retracted positions of the common development nozzles 5A and 5B, respectively. The development processing apparatus is an example of a liquid processing apparatus. A blade type cleaning device for a substrate such as a wafer W. In this case, the individual chemical liquid nozzles are provided as a cleaning liquid having a small concentration of the discharged chemical solution, and the common chemical liquid nozzle is set to have a higher concentration of the discharged chemical solution than the above-mentioned concentration of -19-201233453. In the case of the cleaning liquid, the liquid chemical is discharged from the common chemical liquid nozzle only for the first time, and then the surface of the substrate is discharged by the individual chemical liquid nozzles only for the second time shorter than the first time. Wash. (Effect of the Invention) According to the present invention, the first individual nozzle and the second individual nozzle, which are individually provided corresponding to the first processing region and the second processing region, are supplied with a chemical solution to the entire substrate, and are processed. The individual nozzles are treated with a liquid that is occupied by each processing region for a short period of time, and a common nozzle that is shared by the first processing region and the second processing region is used. Therefore, it is possible to suppress the number of nozzles for the chemical liquid and to perform high work efficiency. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic plan view showing the entire liquid processing apparatus according to an embodiment of the present invention. Fig. 2 is a longitudinal side view showing the inside of the cup of the above embodiment. Fig. 3 is a plan view showing a part of the above liquid processing apparatus. Fig. 4 is a front elevational view showing the individual developing nozzles and the common developing nozzles. Fig. 5 is a perspective view showing the individual developing nozzles. Fig. 6 is a longitudinal sectional view showing a common developing nozzle. Fig. 7 is a plan view showing the front end portion of the common development nozzle. Fig. 8 is a plan view showing an example of a processing block for assembling a liquid processing apparatus to a coating/development processing apparatus. -20- 201233453 Fig. 9 is a view showing the configuration of a control unit according to an embodiment of the present invention. Figure 10 is a schematic plan view showing the action of the liquid processing apparatus. Figure 11 is a schematic plan view showing the action of the liquid processing apparatus. Figure 12 is a schematic plan view showing the action of the liquid processing apparatus. Figure 13 is a schematic plan view showing the action of the liquid processing apparatus. Figure 14 is a schematic plan view showing the action of the liquid processing apparatus. Fig. 15 is a schematic side view showing the action of the liquid processing apparatus. Fig. 16 is a schematic side view showing the action of the liquid processing apparatus. Fig. 17 is a schematic longitudinal side view showing the action of the liquid processing apparatus. Fig. 18 is a schematic side view showing the action of the liquid processing apparatus. Fig. 19 is a schematic plan view showing the action of the liquid processing apparatus. Fig. 20 is a schematic plan view showing the action of the liquid processing apparatus. Figure 21 is a schematic plan view showing the action of the liquid processing apparatus. Fig. 22 is a schematic plan view showing the action of the liquid processing apparatus. Figure 23 is a schematic plan view showing the action of the liquid processing apparatus. Fig. 24 is a schematic side view showing the action of the liquid processing apparatus. Fig. 25 is a schematic side view showing the action of the liquid processing apparatus. Fig. 26 is a schematic side view showing the action of the liquid processing apparatus. Fig. 2 is a plan view showing an example of another embodiment of the present invention. Fig. 2 is a plan view showing an example of another embodiment of the present invention. Fig. 29 is a plan view showing an embodiment of another embodiment of the present invention. [Description of main component symbols] W: Wafer-21 - 201233453 D : 1 : 2 : 3 : 41 : 5 : 6 : 7 : 10 , 11 : 13 : 17 : 18 : 42 , 43 ' 44 , 45 , 46 , 66 : 47 , 10a 10b 48 , 501 Developing solution 1st liquid processing module 2nd liquid processing module frame Individual developing nozzles Common developing nozzle cleaning nozzle control unit 20 : Cup rotating suction cup rotating motor waste liquid pipe Lifting pins 52, 62: Nozzle arm portion 53'63: Nozzle conveying mechanism 54, 64: Guide member 5 5, 65 : Piping 56: Development liquid supply system Washing liquid supply system 57, 67 : Outside the assembly section Cup inner cup 58: strut nozzle body-22 201233453 5 0 2 : spout 5 03 : buffer rod 1 ', 2 ' : liquid processing module 303 : wafer transfer mechanism 3 04 : heating module 3 0 5 : platform
71 ： CPU 72 :程式儲存部 7 2 a :程式 -23-71 : CPU 72 : program storage unit 7 2 a : program -23-