TW201232693A - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
TW201232693A
TW201232693A TW100143526A TW100143526A TW201232693A TW 201232693 A TW201232693 A TW 201232693A TW 100143526 A TW100143526 A TW 100143526A TW 100143526 A TW100143526 A TW 100143526A TW 201232693 A TW201232693 A TW 201232693A
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TW
Taiwan
Prior art keywords
transport
substrate
processing
shuttle
unit
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Application number
TW100143526A
Other languages
Chinese (zh)
Inventor
Goro Furutani
Takashi Terada
Yoshiteru Fukuda
Norio Wada
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Tokyo Electron Ltd
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Publication of TW201232693A publication Critical patent/TW201232693A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67727—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations using a general scheme of a conveying path within a factory
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention is directed to providing a substrate processing apparatus. Unrelated to the types of single processing or batch processing, the apparatus can perform a series of processing on a substrate with high efficiency and high throughput through a novel substrate transport system. In the substrate processing apparatus, a landscape-oriented process station 10 is disposed in a system center portion, two end portions in the longitudinal direction (X direction) of the system being connected to a loader 12 and an unloader 14 respectively. The process station 10 has a transport line 28 extending straightly along the longitudinal direction (X direction) of the system from the loader 12 toward the unloader 14, multiple types of multiple processing units 44-54 described later sandwiching the transport line 28 being disposed on the left and right sides of the transport line 28. On the transport line 28, a plurality of (four in the exemplary drawing) single transport mechanisms 30, 32, 34, 36 and a plurality of (3) shuttle transport portions 38, 40, 42 are arranged alternately in a line.

Description

201232693 六、發明說明： 【發明所屬之技術領域】 板處ΐίϊ係Ϊ於，板表面施行用以進行細微加工之處理之基 徨、矣其f置、’制疋·針對每—處理程序朝各製程之處理裝置 傳运基板以進行一連串處理之基板處理裝置。 乂 【先前技術】 制、止2往^半導體元件、FPD(平面顯示器）、太陽電池面板等 用將對應—連串製程之多種類處理裝置加以匯 程順序將處理對象基板(半導體晶圓、玻璃基板 运至各處縣置以進彳了—連串程序處理之線上系統形態 易ίίΐΓΐΚ!任一者皆係逐一處理基板之單片式製“時： 易於心用如此之線上系、统。亦即，若每！片基板之產距 ，単片製程Pm之所需，該單片製既中即可二S 置ΐυ!ίΐί轉台數N綱係自然數，崎Tm/T狀單片式處= 然而，匯集在線上之製程種類或數量若增多，在 置之間負責傳送基板之運職械臂之JL作即會增加*.導致其追^ 上產距。在此採用-方式’將線上系統分割為複數區域，^ 域内令1台運送機械臂進行處理裝置間之基板傳送，於鄰接區: 間令雙方之運送機械臂經由固定基板中繼台交換基板(參昭 專利文獻1)。 '' 【先前技術文獻】 【專利文獻】 【專利文獻1】日本特開2001-319852號公報 【發明内容】 (發明所欲解決之課題） 如上述令複數運送機械臂經由固定基板中繼台交換基板之線 上系統中，其順序為：傳遞基板之一側的運送機械臂載置基板於 201232693 ϊίΐΐί ’ 基板之—側的運送機械臂自基板中繼台取走 邊基板。然而，就另一觀點而言，1 ^疋 的運送機械臂自基板中繼台取走心、^I 土板之一側 機械臂將另-基板載置於基板中^台。，遞土板之一側的運送 板載ϊ:ίί中板之-侧的運送機械臂將基 ! ’與接收基板之-側的運送機械臂自 土扳中繼。取走基板之動作無法同時 獨立進行固有之運送工作，但在機械㈣分別 中繼台之閒置狀況，依情形亦需^二3 土板時需確認基板 送效率降低，遂㈣:*订切入控制。因此不僅導致運 高。"、频#之控_式(倾)亦會㈣膨大且成本提 排成同種類之處縣置大致依製造流程之順序 =成-狀線上线中’各運送機械臂不但令1、 之執2:?方=動如===著於系統_‘ ，，導，二=度===臂進行 ▽人擔心產生微粒，或是捲起微粒 s 、、 橫向 -低，且 片 =其他系統形態中亦可觀察到如上述 式處理裝置與分批式處理裝置時，二有早 $承故如上述經由基板中繼台令複數運送機械臂=二 』更顯著’非常難贿構線上纟統。 方式的缺 為解決如上述習知技術之問題點，本發明揾供一接# ^置’無關於單片處理或分批處理種類 處理 方式以高效較高纽能力蹄雌反運送 .(解決課題之手段） m逑串處理。 本發明第1觀點中基板處理裝置包含： 第1及第2運送通道，以任意長度沿水平方 置之間於該第!運送通道上J復;;J1;私通初—端之第1卸料位 201232693 第2搬運梭’具有裝載丨片基板之托架，可在設於 道-端之第2運出位置，與設於該第2運送通道另 置之間於該第2運送通道上往復移動； 而（弟2卸料位 第1運送機構，以可對該第i及第2運出位置進行存 置’ ϋ用以ϋ第1區域内運送基板之1個或複數第1運送臂；U 苐2運运機構，以可對該第丨及第2卸料位置進行 置’於第2區域内運送基板之】個或複數第蹲 處理部，為對基板施行所希望之單片處 ，及 於該第1及第2區域至少其中一者； < W刀批處理’配置 -載般-料1衫埯出位置逐 第板2運送臂於該第1及第2卸料位置自該 獨立進行藉由該第！搬運梭自該第丨運出位 置之運送，與藉由該第2搬運梭自該第2運出位置^节第 位置基板之運送。 罝朝忒苐2卸料 上述第1觀點基板處理裝置中，如上述 出位置朝第1卸料位置基板之單片 運^弟2運出位置朝該第柳料位置基板之單片運送Γ由第2搬 奴機構在第1或第2搬運梭其中任一者停留;1 搬運梭其中任-者停留於第！或第2知斜苐1或第2 運送機構直接配合第1及第2搬運梭定型A3片基板 Ϊ作傳遞或傳送基板即可，無需在意對象側運送機 本鲞明第2觀點中基板處理裳置包含. 基板魏線，自製造綠场_τ_财平方向運送被處理 部逐，設在該運送線上，與配置在其卵之第i處理 201232693 第2運送機構，設在該運送線上赖哕 與配置在其周圍之第2處理部逐片傳運运機構更下游側， 接兮動之第1及第2搬運梭’ ^成該運送線一區間，自鄰 权目弟i運出位置朝第丨卸料位置基 ^ 梭自第2運出位置朝該第2卸料位置基^==送與=弟=運 者停留於第其中任一 板即可’無f在意對象侧運送機構 娜、基 本發明第3觀財紐處職置包含m兄 基板運送線’自製造流程上游_下游側財平方向運送被處理 部逐片^機板構’設在賴送虹，與配置在其之第1處理 第2運送機構，設在該運送線上較該第丨運送機構更 與配置在其周圍之第2處理部逐片傳遞基板；及U携更下游側，201232693 VI. Description of the invention: [Technical field to which the invention belongs] The board is located on the surface of the board, and the surface of the board is subjected to the processing for fine processing, and the unit is placed, and the processing is performed for each processing program. The processing device of the process transports the substrate to perform a series of processing of the substrate processing device.乂[Prior Art] The semiconductor substrate, the FPD (flat-panel display), the solar cell panel, etc. are processed by a plurality of types of processing devices that are compatible with each other. The substrate is transported to all counties and counties. The online system is easy to ίίΐΓΐΚ! Any one of them is a one-piece system for processing substrates one by one. Time: It is easy to use such online systems and systems. That is, if the production distance of each of the substrate substrates is required for the 制 film process Pm, the single-chip system can be placed in two s! ΐ 转 转 数 N N N N N N N N N N N N N N N N N N N T = However, if the number or type of processes on the online collection is increased, the JL of the transport arm that is responsible for transferring the substrate between the devices will increase *. Lead to the production distance. Here, the method is adopted. The system is divided into a plurality of areas, and one transfer robot is used to transfer the substrate between the processing devices. In the adjacent area: the transfer robots of both sides exchange substrates with the fixed substrate repeater (see Patent Document 1). ' [Previous Technical Literature] [Patent Document 1] Japanese Laid-Open Patent Publication No. 2001-319852 (Draft of the Invention) (Problems to be Solved by the Invention) In the above-described online system in which a plurality of transport robot arms exchange substrates via a fixed substrate relay, the order is : The transport robot arm on one side of the transfer substrate mounts the substrate on the side of the substrate on the 201232693 ϊίΐΐί ' substrate. The transfer robot removes the edge substrate from the substrate repeater. However, from another point of view, the 1 ^ 运送 transport robot The arm is removed from the substrate relay station, and the arm of one side of the earth plate is placed on the substrate. The transport plate on one side of the transfer plate is placed on the side of the plate. The transport robot arm bases the 'transporting robot arm on the side of the receiving substrate from the earth. The action of removing the substrate cannot simultaneously perform the inherent transport work independently, but in the mechanical (4) idle state of the repeater station, In the case of 2 or 3 earth plates, it is necessary to confirm the reduction of the substrate delivery efficiency, 遂 (4): * set-cut control. Therefore, it not only leads to the operation height. ", frequency # control _ type (dip) will also (4) expansion and cost The same type of county According to the order of the manufacturing process = in the line - in the line, the 'transporting robot arm not only makes 1, the 2:? square = move as === on the system _',, guide, two = degree === arm The monks are worried about the generation of particles, or the rolling up of particles s, horizontal-low, and the film = other system forms can also be observed in the above-mentioned processing device and batch processing device, two early as the cause of the above Through the substrate relay station, the plurality of transport robots = two "more significant" is very difficult to bribe on the line. The lack of the method solves the problem of the above-mentioned conventional technology, and the present invention is provided for the connection. Single-piece processing or batch processing type processing method to efficiently transport high-strength hoofs and females. (Resolving the subject) m逑 string processing. In the first aspect of the present invention, the substrate processing apparatus includes: the first and second transport passages are disposed on the first transport path along a horizontal direction with an arbitrary length; J1; the first unloading of the private first-end Level 201232693 The second transport shuttle has a bracket for loading the cymbal substrate, and can be disposed at the second transport position at the track end and on the second transport path between the second transport path and the second transport path. Reciprocating movement; and (the second delivery mechanism of the second discharge position, the first and second transport positions may be stored) for transporting one or a plurality of first transport arms of the substrate in the first region; The U 苐 2 transport mechanism is configured to place the substrate or the second unloading position in the second region or the plurality of 蹲 processing portions to perform a desired single piece on the substrate. And at least one of the first and second regions; <W-knife processing'-loading-loading-material 1 shirt ejection position from the second plate transport arm to the first and second unloading positions from the The transport of the first transport shuttle from the second transport position is performed independently, and the second transport position is used by the second transport shuttle. In the above-described first aspect substrate processing apparatus, the single-piece transporting position of the substrate at the first discharge position to the first discharge position is directed to the substrate of the first stock position substrate. The second transporter is parked by either the first or the second transport shuttle; the shuttle shuttle is in the first place or the second transport ramp 1 or the second transport mechanism directly cooperates with the first and The second transport shuttle type A3 substrate can be used for transfer or transfer of the substrate, and it is not necessary to care about the object side conveyor. The substrate processing method includes the substrate processing line, and the self-manufactured green field _τ_财平 direction The transport processing unit is provided on the transport line, and the second transport mechanism disposed in the i-th processing 201232693 of the egg is disposed on the transport line and the second processing unit disposed on the transport line is transported one by one. On the downstream side, the first and second transport shuttles are connected to the transport line, and the transport destination line is moved from the second transport position to the second discharge position. The second unloading position base ^== send and = brother = the operator stays in any of the boards can be 'no f care about the object side The transportation agency Na, the basic invention, the third view of the financial position, the office includes the m brother substrate transport line 'from the upstream of the manufacturing process _ downstream side of the financial direction, the processing part is processed piece by piece ^ machine plate structure' set in Lai send rainbow, and configuration In the first processing, the second transport mechanism is disposed on the transport line, and the second processing unit disposed around the second transport unit transmits the substrate one by one; and the U carries the downstream side.

移動之第1及第2搬運梭，構_運送線自 ^接料1運送機構之第丨及第2運出位 J &及第2卸料位置分別逐片魅基板而單片 籍由織姉峨純之運送與 第瑱點之基板處理.裝置巾，如上述，藉由幻搬 !之早片運送與藉由第2搬運梭基板之單片運送在一定二土 f ίίί。Ϊ此，幻運送機構在第1及第2搬運梭依產距時間周』 =停留於幻及第2運出位置期間内载置i片基板即可。第 構在第1及第2搬運梭依產距時間周期交互停留於第丨及第2卸料 201232693 =期間絲板即可。各運送_直接配合第丨 ΐ疋性之往復動作依產距時間周期傳遞或傳送基板ΐ 可’無需在意對象側運送機構之行動或狀況^ ^ 1 (發明之效果） Π發明之基板處理裝置，齡如±述之構成及侧，益關 分批處理之種類’可藉由新穎的基板運送方式叫 效率且向處理能力進行對基板施行之一連串處理。. 【實施方式】 以下，參照附圖說明本發明之較佳實施形態。 板Γ—Ϊ施形態中基板處理裝置之系統構成。此基 ί處/ 補如®17所示之色素概太陽電池製程 二，線上製作與對向電極(陽極)貼合前透明基板側之疊層: 私序。 抖f增獻陽電池作絲本構造，在咖雜(陰極)2〇〇盘 ί 卿之間包錄麟概技之纽料導 子層204_電解質層206。在此，半導體微粒子層2〇4盥透明 、電解質層2〇6及對向電極2〇2一齊經分割為單元單位，在 明電極200形成。對向電極2〇2在對向基板210上 底€極5形成。各單元之透明電極雜連接隔壁的對 向電極202 ’模組碰衫鮮元躲㈣連接或連接。的 =構成之色素增感太陽電池中’若自透明基板之背側昭 射可見光，即會激發由半導體微粒子層2〇4载持之色素，放 經ί出之電子經由半_微粒子層204導往透明電極2〇〇， in經送出之電子經由外部電路(未經圖示)回到對向電極 至由電解質層206中之離子再次由半導體微粒子層2〇4内之色 素接收。如此，將光能量即時轉換為電力而輸出之。 料減理裝置巾’作為核理之贼理基板⑽ t有透罢 圖案化前的毯覆式透明導電層之透明基板 口1入。又，分別針對各基板G依序在線上進行透明電極2〇〇 ⑧ 201232693 之 4 ^ 半¥體微粒子層2〇4之成膜、峨及對多孔質半導體微 連串主要製程及附隨此等主要ίϊί 人要洗處理、熱處理等)。結果製作出與對向電 畢之基板G，朝負責下一程序之另一其拓.壯 几 2_之疊層組件。此實_巾之^； & 反 [裝置整體之構成] ㈣娜⑽狀 圖1中，此基板處理裝置將橫向較長的處理站咖己置於 心長邊方向(X方向)兩端部連結錄機12及卸載機μ、。 之埠ϊ載22係城盒單位自例如自走運送車送人未處理基板g ^盒平台16 ’沿系、统寬度方向(γ方向)將複數個 力Hi收f复數片（例如25片）未處理基板G之昆盒c排成 加以載置，及 登，機運送機構I8，自此平台10上的任盒⑽片為單位 ^土板G ’將經取出之基板〇置人處理賴。裝賴運送機 包含： 本體l&a ’以Y、Z、Θ3軸移動；及 1根運送臂18b ’可在此本體18a上進退或伸縮移動； 可經由固定基板中繼台20與鄰接之處理站1〇側交換基板G。 卸載機14係以匣盒單位朝例如自走運送車移出處理完畢之基 板G之埠口，包含： 盒平台22 ’沿系統寬度方向(γ方向)將複數個以水平姿態縱 向堆疊並收納複數片（25片）處理完畢基板排成一排並加 以載置；及 卸載機運送機構24，將處理完畢的基板G逐一收納於此平台22 上的任一匣盒C。卸載機運送機構24包含： 本體24a ’以Y、Z、Θ3軸移動；及 1根運送臂24b，可在此本體24a上進退或伸縮移動； 可經由固定之基板中繼台26與鄰接之處理站10側交換基板〇。 201232693 筆直朝純機14沿系統長邊方向(χ方向) 多數及多種此運細於其左右_配置有後述 片運逆’父互排成一列配置有複數(圖示例中係4個)單 28上idf單片運送機構3G就製造流程來說位於運送線 38所句4。ί 褒載機12之基板中繼台20與第1穿梭運送部 配置有° d第1早片運送機構3〇左右兩側展開之第1區域分別 理面1台/複數台單片式清洗單元44，用來逐-清洗基板G之被處 面上案化單元46，时逐—將基板g被處理 面上的透明導電層圖案化為透明電極200。 時，Ϊ^ίίΪ處理裝置中匯錢配置複數同—單片式處理單元 向堆疊此等複數單元之構成’且該原則適用於 第2單片運送機構32位於運送線28上較第丨單片運 mH1/梭運送部％與第2穿梭運送部4G包夾。於此第2單 片運迗械構32左右兩側展開之第2區域中分別配置有： 單/ί作雜細單元48，时解導體微粒子 層(侧極)204逐一在基板G被處理面上成膜(例如印刷塗及 數台單片式熱處理單元5G，用來逐—烘烤塗布後基板 運Ϊ機構34位於運送線28上較第2單片運送機構32更 下游側，由第2穿梭運送部40與第3穿梭運送部42包夾。於 ^運=構34左右兩側展開之第3區域中配置有一對分批式锻燒 ΐί=:52Β ’以集中鍛燒複數片（例如100片）在基板〇上形成之 半導體Μ粒子層(作用極)2〇4。 第4單片運送機構36位於運送線28上較第3單片運送機構34 下游側，由第3穿梭運送部42與鄰接卸载機14之基板中繼台如包 10 ⑧ 201232693 ΐ複㈣兩趣1之純域_配置有1台 成=====曾感色素吸附在基紐形 送機構32_之顧及魏。 ^與幻早片運 (z方ΓΑϊ^??32Τ沿方位角方向(θ方向)旋轉且可沿錯直方向 更f細而言，單片運送機構32如圖3所示以可ΐΪί 式字重：a：成2k的上部及下部運送本體6〇11、6〇1安裝於且有 „或滾珠螺桿機構之固㈣昇降驅動部兄之昇g驅動軸 方 、6_昇__58上可分職立朝方位角 ^向(θ方向m壬思的方向旋轉移動，兩運送臂歸、紙可在運 本體60U、现上分別獨立進退或伸縮移動。各運送臂廳、狐 分別逐-以可裝卸之方式載置、載持或固持矩形基板〇。 相關構成之單片運送機構32如圖2所示對在第2區域内所配置 之任意處料元A(單以作雜成膜單元48)AB(單以熱處理 元50)，以及上游側(第1穿梭運送部38)之上部搬運梭jsu/下部搬運 梭JSL及下游側(第2穿梭運送部4〇)之上部搬運梭Ksu/下部搬運梭 KSL其中任-者皆可進行存取，可逐一於各存取對象交換基板& 又，針對位於運送線28最上游之第1單片運送機構3〇 ,固定基 ，中繼台20取代上游侧搬運梭JSU/JSL。此基板中繼台2〇中上下重 豐配置有2段可載置1片基板G於複數支持銷或昇降銷並由該複數 +持銷或昇降銷水年支持該基板之一對載置台2〇u、2〇L。自第i 單片運送機構30觀察，上部載置台20U相當於在卸料位置靜止的上 游側上部搬運梭JSU，下部載置台20L相當於在卸料位置靜止的上 游側下部搬運梭：TSL。 且針對位於運送線28最下游之第4單片運送機構36，固定基板 中繼台26取代下游側搬運梭Ksu/KSL。此基板中繼台26中亦與基 板中繼台20相同，上下重疊配置有2段可載置丨片基板〇於複數 11 201232693 ί 由=fD5持銷或昇降銷水平支持該基板之-對載 在運出位置靜止之下^片運达機構36觀察，上部載置台26U對應 運出t置靜止之下游观置纖對應在 [牙梭運送部之構成] 穿梭 又EJ不，牙梭運送部38包含： 進移ΐ掀下部搬運梭SU、SL，在此等運送通·、64上獨立直 托架相具有水平裝㈣基板把絲66。於此 G時以水又ί姿態=二角隅之固持曰部68 ’或裝卸(裝載/卸載>基板 :=s二了=之上部卸料位_即二亭 向(，向)以一定速度或 留，間:u ;=r—;亦== 12 ⑧ 201232693 出、往動移動、卸料、復動移動所構成 係此基板處理裝置中祕整體之產距日^。連串動作。在此，ts 留-定時間TFL後，在下Ϊ運置^^出 而停 速度直進鷄，-旦到達終點之下部=向(X方向)以一定 $該基板G而停留-鱗間TwL。又，經^^止套為 ，無基板之閒置狀態下於下部運送通道 達終點之下部運出位肌即在^亭止U = 動厂旦到 時間TF]L。下邻搬:、、、運出新基板G而停留一定 往丄二：ί 疋週期亦即2Ts重複如上述運出、 在動移動、卸料、復動移動所構成之—連串動作。㈣出 互。L 3練梭SU之往復動作與下部搬運梭％之往復動作相 j反週期或相反相位關係。亦即， gThe first and second transport shuttles are moved, and the transport and transport lines are transported from the first and second transport positions of the transporting device 1 and the second unloading position, respectively.姊峨Pure transport and substrate processing of the 瑱 point. The device towel, as described above, is transported by the phantom transfer and the single transport by the second transport shuttle substrate in a certain two soils. In this case, the magic transport mechanism can mount the i-piece substrate during the period of the first and second transport shuttles according to the production time period = staying in the magical and second transport positions. In the first and second transport shuttles, the first and second transport shuttles are alternately stopped at the second and second discharges 201232693 = during the period. Each of the transports _ directly cooperates with the reciprocating action of the second nature to transfer or transfer the substrate according to the production time interval. 无需 The action or condition of the object-side transport mechanism is not required. ^ 1 (Effect of the invention) The substrate processing apparatus of the invention, The age is as described in the section and the side, and the type of the batch processing can be called a series of processing by a novel substrate transport method called efficiency and processing capability to the substrate. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. The system configuration of the substrate processing apparatus in the form of a plate. This is the base of the pigment solar cell process shown in Fig. 17 . 2. The laminate on the transparent substrate side before the on-line fabrication and the counter electrode (anode) are bonded: private order. Shake f increased the yang battery as the wire structure, and in the coffee (cathode) 2 〇〇 卿 包 麟 麟 麟 麟 麟 麟 麟 麟 麟 麟 麟 麟 麟 麟 麟 麟 麟 麟 麟 麟 麟 麟 麟 麟 麟 麟 麟Here, the semiconductor fine particle layer 2〇4盥 is transparent, the electrolyte layer 2〇6, and the counter electrode 2〇2 are collectively divided into unit units, and are formed in the bright electrode 200. The counter electrode 2〇2 is formed on the counter substrate 210 at the bottom of the counter electrode 2. The transparent electrode of each unit is connected to the counter electrode 202' of the partition wall to block or connect. In the dye-sensitized solar cell, if the visible light is emitted from the back side of the transparent substrate, the dye carried by the semiconductor fine particle layer 2〇4 is excited, and the emitted electrons are guided through the semi-microparticle layer 204. The transparent electrons 2 〇〇, in the sent electrons are returned to the counter electrode via an external circuit (not shown) until the ions in the electrolyte layer 206 are again received by the dye in the semiconductor fine particle layer 2〇4. In this way, the light energy is instantly converted into electric power and output. The material of the material-reducing device is used as a nuclear substrate for nucleus (10). The transparent substrate of the blanket-type transparent conductive layer before patterning is introduced. Further, for each of the substrates G, the formation of the transparent electrode 2〇〇8 201232693, the formation of the 4* semi-fine bulk particle layer 2〇4, and the main process for the porous semiconductor microstrip and the accompanying process are performed on the line. Mainly ίϊί people need to wash, heat treatment, etc.). As a result, the substrate G which is opposite to the opposite electrode is fabricated, and the laminated assembly which is responsible for the next process is further developed. (1) Na (10) In Figure 1, the substrate processing apparatus places the horizontally long processing stations at both ends of the long side of the heart (X direction). Connect the deck 12 and the unloader μ. The 22-series city box unit is provided, for example, from the self-propelled transport vehicle, to the unprocessed substrate g ^ box platform 16 ' along the system, the width direction (γ direction), a plurality of forces Hi to receive a plurality of f (for example, 25) The unpacked substrate G is placed in a row, and the machine transport mechanism I8 is mounted. The cassette (10) on the platform 10 is a unit of the earth plate G'. The sling conveyor includes: the body l&a 'moves in the Y, Z, Θ3 axes; and one of the transport arms 18b' can move forward and backward or telescopically on the body 18a; can be processed via the fixed substrate repeater 20 and adjacent The station 1 side exchange substrate G. The unloader 14 is configured to remove the processed substrate G from the cassette unit in, for example, a self-propelled transport vehicle, and includes: the cassette platform 22' vertically stacks a plurality of horizontally oriented and accommodates a plurality of pieces in the system width direction (γ direction) (25 pieces) The processed substrates are arranged in a row and placed thereon; and the unloader transport mechanism 24 stores the processed substrates G one by one on any of the cassettes C on the platform 22. The unloader transport mechanism 24 includes: the main body 24a' moves in the Y, Z, and Θ3 axes; and one transport arm 24b that can move forward and backward or telescopically move on the main body 24a; and can be processed via the fixed substrate relay station 26 and adjacent The station 10 side exchanges the substrate 〇. 201232693 Straight to the pure machine 14 along the long side of the system (χ direction) Most and a variety of this operation is finer than its left and right _ configuration has the latter described in the reverse. The parent is arranged in a row with a complex number (four in the example) The idf single-chip transport mechanism 3G on the 28th is located at the transport line 38 in terms of the manufacturing process.基板 基板 基板 基板 基板 基板 之 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第44. The surface of the substrate G is cleaned by the surface of the substrate G, and the transparent conductive layer on the processed surface of the substrate g is patterned into the transparent electrode 200. In the processing device, the money transfer configuration complex is the same as that of the monolithic processing unit to stack the plurality of units. The principle applies to the second single-chip transport mechanism 32 being located on the transport line 28 than the third unit. The transport mH1 shuttle transport unit % is sandwiched by the second shuttle transport unit 4G. In the second region where the left and right sides of the second single-piece transport mechanism 32 are unfolded, respectively, a single/yield dummy unit 48 is disposed, and the conductor thin particle sublayer (side pole) 204 is processed one by one on the substrate G. The upper film formation (for example, printing and a plurality of single-piece heat treatment units 5G for the one-bake-coating substrate transport mechanism 34 is located on the transport line 28 on the downstream side of the second single-chip transport mechanism 32, by the second The shuttle transport unit 40 and the third shuttle transport unit 42 are interposed. A pair of batch-type calcined ΐ = : Β = ( ( ( ( ( ( ( ( 构 ( 构 ( ( ( ( 100 pieces) a semiconductor germanium particle layer (working electrode) 2〇4 formed on the substrate crucible. The fourth monolithic transport mechanism 36 is located on the transport line 28 on the downstream side of the third single-piece transport mechanism 34, and is transported by the third shuttle transport unit. 42 and the substrate relay station of the adjacent unloader 14 as package 10 8 201232693 ΐ复(四) two interesting 1 pure domain _ configured with one set ===== sensible dye adsorption in the base shape delivery mechanism 32_ Wei. ^ With the illusion of early film transport (z square ΓΑϊ ^?? 32 Τ in the azimuthal direction (θ direction) rotation and can be more in the wrong direction, the single piece transport The mechanism 32 is ΐΪ 字 : : : : : : : : : : : : 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部 上部The drive shaft side, 6_liter __58 can be divided into azimuth angles (the direction of the θ direction m 壬 旋转 rotation, the two transport arm return, paper can be transported in the body 60U, now independently advance and retreat or telescopic movement Each of the transport arm halls and the foxes detachably mounts, holds, or holds the rectangular substrate 逐. The single-piece transport mechanism 32 of the related configuration is disposed at any position in the second area as shown in FIG. 2 . Material element A (single film forming unit 48) AB (heat treatment unit 50 alone), and upstream side (first shuttle transport unit 38) upper shuttle jsu/lower transport shuttle JSL and downstream side (second shuttle) The transport unit 4) the upper transport shuttle Ksu/lower transport shuttle KSL can be accessed, and the substrate can be exchanged one by one for each access object, and the first monolith located at the most upstream of the transport line 28 The transport mechanism 3〇, the fixed base, and the repeater 20 replace the upstream side transport shuttle JSU/JSL. The Feng configuration has two sections for mounting one substrate G on a plurality of support pins or lift pins, and one of the substrates is supported by the plurality of pins + pin or lift pin water year to the mounting table 2〇u, 2〇L. The single-piece transport mechanism 30 observes that the upper stage 20U corresponds to the upstream upper transport shuttle JSU that is stationary at the discharge position, and the lower mount 20L corresponds to the upstream lower transport shuttle: TSL that is stationary at the discharge position. The fourth substrate transport mechanism 36, which is the most downstream of the line 28, and the fixed substrate repeater 26 replace the downstream transport shuttle Ksu/KSL. The substrate repeater 26 is also the same as the substrate repeater 20, and two stages of the slab substrate can be placed on top of each other. The multi-layer 11 201232693 ί is supported by the =fD5 pin or the lift pin horizontally. When the carry-out position is stationary, the film transport mechanism 36 observes that the upper stage 26U corresponds to the transport of the t-position and the downstream view fiber is corresponding to the [configuration of the shuttle transport unit], and the EJ is not, the shuttle transport unit 38 The utility model comprises: a loading and lowering conveyance shuttle SU and SL, wherein the independent straight bracket phase has a horizontal mounting (four) substrate wire 66. At this G, the water and the posture of the yoke = the corner of the yoke 68 ' or the loading and unloading (loading / unloading > substrate: = s = the upper part of the unloading position _ that is, the second pavilion to (,) to a certain Speed or stay, between: u ;=r—; also == 12 8 201232693 The movement of the moving, unloading, and double-moving movements constitutes the overall production distance of the substrate processing device. Here, after the ts stays for a certain time TFL, the squat is set to stop and the speed is straight into the chicken, and the lower part reaches the end point = the direction (X direction) is stopped for a certain amount of the substrate G - the scale TwL. According to the ^^ stop sleeve, in the idle state without the substrate, the lower part of the delivery channel reaches the end point and the muscle is transported out at the lower end of the station. The new substrate G is stopped and moved to the second: ί 疋 cycle, that is, 2Ts repeats as described above, moving, unloading, and reversing movements - a series of actions. (4) Out of each other. L 3 practice shuttle SU The reciprocating action and the reciprocating action of the lower transport shuttle are in a reverse cycle or opposite phase relationship. That is, g

™ 獅L ^卸枓位置WL停留相同時間。亦即Tfu=Twl。又，上 載有基板(¾在上部運送通道62上自上部 ^^ ΐ置去程方向(X方向)以4速度或—絲行日 二了 ί搬運梭％同時在未載有基板之閒置狀態下於下部運送通 ^一、=1部卸料位置肌朝下部運出位置孔沿回程方向(-乂方向） 乂问一逮度或同一移行時間直進移動。 却椒上部搬運梭SU為運入基板G而於上部卸料位置WU停留時，下 4運梭SL為運出基板G而於下部運出位置FL停留相同時間。亦 即Th^Twu。又，下部搬運梭SL載有基板(3而在下部運送通道64上 自下部運，位置1^朝下部卸料位置WL沿去程方向(X方向）以一定 速度或一定移行時間直進移動時，上部搬運梭SU同時在未載有基 板之閒置狀態下於上部運送通道62上自上部卸料位置wu朝上部 ^出位置FU沿回程方向(_χ方向）以同一速度或同一移行時間直進 矛夕動、、&'而s之，存在有τ^^ΤιζΤί^ΐνυ之關係。 —如此，此實施形態之基板處理裝置中，於每一產距時間Ts交 互藉由上部搬運梭犯自上部運出位置FU朝上部卸料位置_運送 13 201232693 =晉&板f·藉由下部搬運梭SL自下部運出位置FL朝下部卸料 τ運送單片基板G。又，如此藉由上部搬運梭SU及下部搬運 梭進行之交互單片運送在第卜第2及第3穿梭運送部38、40、42 之間同時亦即同步進行。 [處理單元之構成] 處理顯示組裝於此實施形態之基板處理裝置之單片式 ，5Α所示之第丨類型水平載置基板(3於設在處理室或腔室 上’在平台74上方使用可沿水平方向及錯直方向 ^田毛頭°P76對基板〇正耐被處理Φ)施行所需之單片處理。例如 蚀田带Γ擦磨清洗裳置或紫外線清洗裝置之單片式清洗單元44、 η 虫刻之單片式圖案化單元46及使用網版印刷機之單 '。用極成膜單元48、使时嘴式色素吸喊置之單片式 此第1類型。此時’於毛刷擦磨清洗裳置頭部76搭載 於紫外線清洗裝置頭部76搭載有紫外線燈，於雷射 =ϊί頭部L6搭載有f射出射單心於網版印刷機頭部 仲*二於Ϊ嘴式色素吸附裳置頭部76搭載有狹縫噴嘴噴吐口 ϊϋίϊ基板g之喷嘴，或是具有對應各半導體微粒子層之筒 狀、狹縫狀或圓形狀等複數喷吐口之喷嘴。 门 圖5B所示之第2類型於結合設在處理冑或腔室㈣ 之旋轉吸盤82上水平載置基板〇並以可旋轉之方式固 持該基板，錢轉讀82上雜料沿 ^ 之頭部84對基板G正面(被處理 向， ^片式々洗早兀44使时射擦磨清洗裝置時，或 = 早=46使用濕姓刻裝置時亦係此第2類型。此 附裝置頭部84搭載有喷吐色素溶液之喷二 料洗液之修於濕烟裝 圖6Α及圖紐顯示上述第！及第2類型單片式處理單元中基板之 ⑧ 14 201232693 裝载/卸載動作。 ^1類®(圖6A)中，更換在平台74上處理完畢之基 二接受處理之基板Gj時，最初複數條昇降細6自平台 )以上推處理完畢之絲Gi。在此，閒置狀態之運 幵= 運送臂MU)自處理室72側壁之基板出人σ 75進人處(上^TM lion L ^ unloading position WL stays the same time. That is, Tfu=Twl. Further, the substrate is loaded (3⁄4 on the upper transport path 62 from the upper portion of the egress direction (X direction) at 4 speeds or - the line is the second day, the transport shuttle is % while the idle state without the substrate is carried. In the lower part of the transport, the first part, the part of the unloading position, the lower part of the muscle, the lower part of the hole, the direction of the hole, the direction of the return (-乂 direction), the first move or the same travel time, and the direct movement of the same travel time. G, while staying at the upper discharge position WU, the lower 4 shuttle SL stays at the lower transport position FL for the same time as the transport substrate G. That is, Th^Twu. Further, the lower transport shuttle SL carries the substrate (3 When the lower transport path 64 is transported from the lower portion, and the position 1^ is moved forward in the forward direction (X direction) at a certain speed or a certain travel time toward the lower discharge position WL, the upper transport shuttle SU is simultaneously idle without the substrate being loaded. In the state, the upper conveying path 62 is moved from the upper discharging position wu to the upper discharging position FU in the returning direction (_χ direction) at the same speed or the same moving time, and the τ is present, and there is τ ^^ΤιζΤί^ΐνυ relationship. - So, this embodiment In the substrate processing apparatus, the interaction between each production time Ts is caused by the upper transport shuttle from the upper transport position FU to the upper discharge position _ transport 13 201232693 = Jin & plate f · by the lower transport shuttle SL from the lower The output position FL transports the single-piece substrate G toward the lower discharge τ. Further, the interactive transfer of the upper transfer shuttle SU and the lower transfer shuttle is performed on the second and third shuttle transport units 38, 40, 42 Simultaneously, the process is performed simultaneously. [Configuration of Processing Unit] The display of the substrate processing apparatus of the embodiment is shown in a single-piece type, and the horizontal mounting substrate of the third type (3) is disposed in the processing chamber or chamber. The upper part is used above the platform 74 to perform the desired single-piece processing on the substrate 〇 76 76 ^ 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The monolithic cleaning unit 44 of the device, the singular monolithic patterning unit 46, and the single sheet using the screen printing machine. The ultra-film forming unit 48 and the nozzle-type pigment absorbing unit are monolithic. Type 1 at this time 'cleaning the hair on the head 76 Mounted on the head of the UV cleaning device, the UV lamp is mounted on the head of the UV cleaning device. The laser beam is mounted on the head of the laser. The head is mounted on the head of the screen printing machine. The head is mounted on the head of the screen printing machine. a nozzle having a slit nozzle spouting port, or a nozzle having a plurality of ejection ports corresponding to a cylindrical shape, a slit shape, or a circular shape corresponding to each semiconductor fine particle layer. The second type shown in FIG. 5B is provided in combination. The substrate 〇 is horizontally placed on the rotary chuck 82 of the processing chamber or chamber (4) and rotatably held by the substrate, and the material is transferred to the front surface of the substrate G along the front surface of the substrate 80 (processed toward This type 2 is also used when the cleaning device is used to wipe the cleaning device, or = early = 46 when using the wet device. The attachment head 84 is equipped with a spray dye solution for the spray of the dye solution to be repaired in the wet cigarette. Figure 6Α and the figure show the above! And the substrate of the second type of single-chip processing unit 8 14 201232693 loading/unloading action. In the ^1 class (Fig. 6A), when the substrate Gj subjected to the processing on the stage 74 is replaced, the first plurality of lifts 6 are lifted from the platform to push the processed wire Gi. Here, the idle state of operation 幵 = transport arm MU) from the side of the processing chamber 72 side of the substrate σ 75 into the person (on ^

Gi。昇降銷86暫時下降。緊接著，固持於此單片式 接受單片處理之基板Gj之下部運送f狐進人處理妨巾 降銷86馬上再次上昇而接收此基板G又’呈 = l滅理室72—收之基i 載置基板 臂ML朝處理室72外出去後，昇降銷86下降至平台74$，Gi. The lift pin 86 temporarily drops. Then, the monolithic substrate Gj is transported under the monolithic processing, and the lower part of the substrate is transported. The fox enters the processing and the snack sales 86 is immediately raised again to receive the substrate G, and the image is returned to the substrate. i After the mounting substrate arm ML exits the processing chamber 72, the lift pin 86 descends to the platform 74$,

Gj於平台74上。 口 ’ 第2類型(圖6B)中，亦令設於旋轉驅動部如中或其附近之 銷88與上述昇降銷86相同與運送臂^、^合作進行昇 錄82以祕收畢之基贼與接著 圖7顯示包含於此基板處理裝置之單片式處理單元之 型。此第3類型經使用於單片式熱處理單元5〇，可使載置並運送^ 片基板G之板片90以滑動式如抽屜般出入本體熱處理室％。進行熱 處理之期間内，板片90於本體熱處理室92外待命⑹。又，熱處王^ 結束後，板片90進入本體熱處理室92中以接收基板G，將接;^之基 板G移出至外而在大氣下暴露一定時間以冷卻之(的。其後，令包容 於板片90之昇降銷94與運送臂MU、ML合作而進行昇'降動作，藉 <此>與上述相同在板片90上更換處理完畢之基板^與下一基板g 一圖8顯示包含於此實施形態之基板處理裝置之分批式鍛燒單 元52A(52B)之構成例。此分批式鍛燒單元52A(52B)係一縱型埶 理裝置，包含： … 筒狀縱型加熱爐96 ; 縱型基板舟98，可收納於此加熱爐96 ; 舟支持臂102，自下而上隔著保溫筒1〇〇支持此基板舟98 ;及 15 201232693 昇降機構l〇4，為使基板舟98出入加熱爐96而令舟支持臂1〇2 昇降移動。 於基板舟98之平行延伸之複數條基板支持棒1〇6以 形成多數聽財驗之方式_分域理肢(例如丨 ^ 板G之固持溝槽(開槽）。 〜心丞 土此分批式鍛燒單元52八_)中，—次分批式鍛燒處理一旦姓 束，如圖不，即將基板舟98朝加熱爐96外(下)抽出。在 ^ =運送機構34之運送臂MU、ML依序對基板舟兆各開槽二于存 取，逐一更換處理完畢之基板Gi與處理前基板G·。 [單片運送機構之基本動作] ^ 就圖9A及圖9B說明各單片運送機構3〇、32、34、 區，内各單>1式纽單域各分批式纽單元進行存取，、更換】 理完畢之基板Gi與處理前之基板q之動作。 、 首先，如圖9A之⑻所示，該單片運送機構在兩運 紙回到原位置或復動位置之狀態下，分別令^^ 昇降移動及旋轉移動，純送臂應、_朝存取忿 ，(未經圖不)前。此時，兩運送臂娜、紙其中一單方 =臂ML於此存取對象之處理單元固持處理前之基 —^ 亦即上部運送臂職無基板G之閒置_。令此閒“狀 運送臂MU之一方對準基板傳遞用之高度位置。 〜 。 其次’該單片運送機構如圖9A之⑼所示令閒置狀離 送臂MU前進或伸長移動至往動位置，自此存 ^ ^ 上部運送臂MU接收處理完畢之基板Gi。接著，如 以 後退或縮短移動至原位置，自此處理單&出不處 =如此處，畢之基板祕，該單片運送機構如圖9 所不，馬上進仃歼降移動(圖示時係上昇移 2之-方的下部運送臂職準基板傳遞用ί高; ’之(e)所示’令下部運送臂亂前進或伸長移動 ^ t 處理前基板Q送入並傳遞至該處理單元内。又，如圖9b:所示： 16 ⑧ 201232693 令呈閒置狀態之下部運送臂ml後退或縮短移動至原位置。 此實施形態中各單片運送機構3〇、32、34、36可使用2條運送 臂MU、ML同時或並行進行下列動作： 、 自鄰接該運送臂之上游側搬運梭JSU/JSL或基板中繼a 20(20U/20L)卸載1片基板G;及 口 載置1片基板G於鄰接該運送臂之下游側搬運梭KSu/KSL或基 板中繼台 26〔26U/26L)。 圖10A顯示於各單片運送機構30、32、34、36中，自上游側上 部搬運梭jsu卸除1片基板Gj，與此同時載置1片基板Gi於下游侧下 部搬運梭KSL之動作。此時，該單片運送機構如圖1〇A之(a)所示， 在兩運送臂MU、ML回到原位置或復動位置之狀態下，分別令運 送本體60U、60L昇降移動及旋轉移動，上部運送臂_面朝上游 側上部搬運梭JSU，下部運送臂ml面朝下游側下部搬運梭KSL。 此時、，上部運送臂MU呈閒置狀態，下部運送臂ml固持基板Gi。 且上游側上部搬運梭JSU載有基板Gj，下游側下部搬運梭KSL呈閒 置狀態。 乂其次，S亥單片運送機構如圖1〇A之(b)所示，令上部運送臂圆 刖進或伸長移動，自上游側上部搬運梭Jsu卸除(接收)基板同 時令下部親臂ML前域伸絲動，魅(傳遞)基板社下游側 下部搬運梭KSL。然後’如_八之(())所示，上部運送臂題及下 部運送臂ML回到原位置。 圖腦顯不於各單片運送機構3〇、32'34、36中，自上游侧下 ^搬運梭JSL卸除1片基板Gj ’與此同時於下游側上部搬運梭Ksu ，置1片基板Gi之動作。此時，該單片運送機構如_B之⑻所示， 士兩運送臂MU、ML回到原位置或復動位置之狀態下，分別令運 ^^6〇1；、紙昇降移動及旋轉移動，下部運送臂1^面朝上游側 。'運梭JSL ’上部運送臂廳面朝下游側上部搬運梭ksu。此 運^臂胤呈閒置狀態’上部運送臂_固持基板Gi。且 / :下部搬運梭JSL載有基板q，下游側上部搬運梭KSU閒置。 八次，該單片運送機構如圖励之(b)所示令下部運送臂狐前 17 201232693 進或伸長移動，自上游側下部搬運梭JSL卸除(接收)基板Gj，同時 令上部運送臂MU前進或伸長移動，載置(傳遞)基板Gi至下游側上 部搬運梭KSU。然後，如圖10B之(c)所示，上部運送臂mu及下部 運送臂ML回到原位置。 且此實施形態中各單片運送機構3〇、32、34、36作為另一運 送形態，可並行或依序進行下列動作： 專使用2條運送臂MU、ML中一方例如上部運送臂腿自上游 側搬運梭JSU/JSL或基板設置台2〇(2〇U/20L)卸載1片基板G ;及 專使用另一方亦即下部運送臂ML載置〗片基板G於下游側搬 運梭KSU/KSL或基板設置台26(26U/26I〇。 例如，使用上部運送臂MU自上游側上部搬運梭jSU卸除丨片基 板Gj，且使用下部運送臂ML載置1片基板於下游側下部搬運梭 KSL時，可進行與圖i〇A相同之並行或同時之動作。然而，使用上 部運送臂MU自上游側下部搬運梭JSL卸除丨片基板q，且使用下部 運送臂ML載置1片基板Q於下游側上部搬運梭時，則如圖HA 及圖11B所示依序動作。 首先’該單片運送機構如圖丨〗A之(a)所示令運送本體6〇1;、6〇l 昇降移動及旋轉軸，輯基贼之下部奴臂狐面朝下上 部搬運梭KSU。其次如gj11A之(b)所示令下部運送臂胤前進或伸 長移動，一載置(傳遞；)基板Gj至下游側上部搬運梭Ksu。然後如圖UA 之(c)所示，閒置之下部運送臂ml回到原位置。 曰其次，該單片運送機構如圖i 1B之⑼所示令運送本體6〇u、亂 ί旋’閒置狀態之上部運送臂娜面朝上游侧下部 ΐ運ί： / ?_人’如圖UB之⑷所示令上部運送臂_前進或伸 長移動’自一上游側下部搬運梭JSL卸除(接收)基板^。然後，如 11B之(f)所不’固持基板巧之上部運送臂圆回到原位置。 [全程序之處理順序] 在此，說·基板處理裝置巾對丨片基板k全程序處理順 首先’於裝载機12，裝載機運送機構18自平台上之任 IS ⑧ 201232693 fH1片基板Gn ’將此抽出之基板Gn載置於基板中繼台20中亦 即上邛載置台20U或是下部載置台2〇L其中任一方。 然後’第1單片運送機構30在基板载置於上部載置台2〇 送臂T收取此基板Gn ’在基板載置於下部载置台20Li 精由下。P運运臂ML收取該基板，以將該基板送入單片式清 日將基板&送人該料式清洗單元44前，先將於此單 凡44清洗處理剛完畢之另一基板送出。 + 於此單片式清洗單元44，藉由清洗頭76(84)對在平台 :及，82上，載置或固持之基板〜被處理面(毯覆_明導電層)施 式之清洗處理。藉由此清洗處理自基机被處理面去除 吳物或污染物。 ㈣ί式之清洗處理—旦結束，第1單片運送機構30即 =片式洗单兀44送出基板Gn ’並將其送入配置於第丨區域内 f ，之單片式圖案化單—°此時亦在將基板仏送 入遠衫式圖案化單元46前，先將於此單元46_化處理剛完 之另一基板送出。 於此單片式圖案化單元46，藉由例如雷射侧法，以雷射出 Ϊ頭L6對載置在平台74上的基板Gn被處理面(毯覆式透明導電層） Γ丁早片方式之圖案化處理。藉由此圖案化處理，於基板Gn被處 理面开^成經圖案化之透明電極200。 又，透明導電層或透明電極2〇〇由例如氟摻雜Sn〇2(FT〇)或是 ^錫氧化物(ITO)所構成。且係基板〇母材之透明基板2〇8由例如石 ，玻璃等透明無機材料，或是聚g旨、壓克力、聚酸亞胺 塑膠材料所構成。 ρ 述單片方式之圖案化處理一旦結束，第1單片運送機構30 、、ΡΪί單片式圖案化單元46送出此基板Gn，將其載置於第1穿梭運 =、、,之上部搬運梭SU或是下部搬運梭见。載有基板Gn之第1穿 送部38之上部搬運梭su或是下部搬運梭31^自其運出位置(FU 或是FL)移動至卸料位置(wu或是1)。 此基板Gn —旦抵達第}穿梭運送部3 8之卸料位置(胃或是 19 201232693 片運送機構32即部除此基板仏，將其送入第2區域内 極成膜單元48 °此時亦在將基板α送入該單片式作 早几48前’先將於此單元48作用極(半導體微粒子層)綱 之成膜處理剛完畢之另一基板送出。 式作用極成膜單元48 ’藉由例如網版印刷*，以印刷 ΐ ρ Ϊί 〇74上基板Gn之被處理面(經圖案化之透明電極200)施行 二国成膜處理。藉由此成膜處理，於基板Gn之被處理面形 上i案之半導_粒子層204 〇又，半導體微粒子層204由例 如Ti〇2、、Sn〇2等金屬氧化物所構成。 如上述單片方式之作用極成膜處理一旦結束，第2單片運送機 自Λ單片式作用極成膜單元48送出此基板心將其送入酉己 第域内運送線28另—側之單片式熱處理單元5〇。此時亦在 :土f Gn迗入该單片式熱處理單元5〇前，先將於此單元5〇熱處理 剛結束之另一基板送出。 於單片式熱處理單元50，在本體熱處理室92以既定溫度加熱 基板Gn-^時，，烘烤基板被處理面之半導體微粒子層綱。又， 烘烤結束後，藉由板㈣自本體熱處理室92朝外送出基板，基板 Gn在板片90上冷卻至常溫。藉由此熱處理提升半導體 4 之宠姐柹。 β。如上述單片方式之熱處理一旦結束，第2單片運送機構32即自 该單片式，疼理單元5〇送出此基板Gn，將其載置於第2穿梭運送部 40之上#搬運梭SU或是下部搬運梭SL。載有基板之第2穿梭運 送部40之上部搬運梭Su或是下部搬運梭见自其運出位u或是 FL)運送至卸料位置(wu或是WL)。 苐3單片運送部34將抵達第2穿梭運送部4〇卸料位置(wu或是 WL)之基板Gn卸除’將其送入第3區域内分批式锻燒單元52八、5況 其令任-者。鱗，在將基板Gn裝人該分批讀燒單元52A(或是 52B)之該㈣财，先自該關取出於此單元52峨是卿锻燒 處理完畢之另一基板，朝單元外送出之。 於分批式锻燒單元52A(52B)，分批處理片數⑽片）處理前基 201232693 板Gr^oo(於其中包含基板Gn)在基板舟98内全部到齊後，再藉由 昇降機構104令舟支持臂102上昇，將基板舟98插入或裝填於加熱 爐96中。土，在加熱爐96中以既定溫度加熱基板舟98上的基板 Gr^Gioo既定時間’結果在各基板Gi〜G_被處理面上獲得半導體微 粒子層204之燒結體。 如上述分批方式之鍛燒處理一旦結束，昇降機構1〇4即令舟支 持臂102下降，將基板舟98移出至加熱爐96外，使基板暴露於大氣 空間内一定時間以冷卻之。第3單片運送機構34依產距時間Ts之周 期對1次分分批式鍛燒處理(鍛燒+冷卻)結束之該分批式鍛燒單元 52A(52B)進行存取，於基板舟98上的各開槽逐一更換處理完畢之 基板G广G1G。與下次接受分批式熱處理之處理前基板G仙〜G⑽。 、如此，藉由第3單片運送機構34將鍛燒處理完畢之基板仏自分 批式鍛燒單兀52A(52B)送出，將其載於第4穿梭運送部42之上部搬 運梭SU或疋下部搬運梭SL。載有基板Gn之第4穿梭運送部42之上 部搬運梭SU或是下部搬運梭SL自其運出位置(FU或*FL)運送美 板至卸料位置(WU或是WL)。 土 g第4單片運送部36將抵達第3穿梭運送部42之卸料位置(胃或 之基板Gn卸除，將其送入第4區域内之任一單片式色素吸附 單兀54。此時，在將基板Gn送入該單片式色素吸附單元54前，先 ^該單元54將色素吸附處理剛完畢之另—基板取出，鮮元_ 於經送入基板Gn之單片式色素吸附單元54，藉由噴嘴頭料對 在方疋轉吸盤82上旋轉移動之基板Gn被處理面（多孔質之半導 :層，吹送色素溶液，實施單片方式之色素吸附貝處理 素吸附處理’增祕素⑽基板(^被處理 乡 ^^204 〇 X， j增感色素溶於祕者。作為增感色素使關如金脑花青等 金屬錯合物或是花青類色素、驗性色素等有機色素。溶媒中可使 用例如醇類、醚類、胺類、烴等。 機構 如上述單方式之色素吸附處理—旦結束，第4單片運送 201232693 36即自該單片式色素吸附單元54送出此基板α，將其載置於基 中繼台26亦即上部載置台26U或是下部載置台亂其中任一方。宜 後卸載機運送機構24馬上自基板中繼台26收取基板〇收納處^里 完畢之基板Gn於平台22上之任一g盒c。 I’1 [單片運送機構之傳送形態η 說明第2單片運送機構32以第1傳送形態自上游側搬 運杬JSU/JSL朝下游侧搬運梭KSU/KSL傳送基板〇之—連 一此第\傳勒邊適帛於在帛2區域N分別逐-設有2麵處理 ^元亦即單片式作職成膜單元48及單以熱處理單元5()時。此 ，’ 1台料式作用極成膜單元48及丨台單片式理、 之週期對各基机施行單 J “ ;二=於:明與理解，略解片式作用極成 =片處理早ΧΛ，略齡片式熱處理單元5()為單 t - ® 圖’於時_，在·域晴有的單片處理 板巧於早;i運送機構η之下部運送臂紙上等 ς 第严停留在於該區域内負責之後 片處理早7LB内。第3基板G綱在於舰域^j早 序之單片處理單元A内。此時，上游側(第J:、、月J (則）的矛王 運_載有第4基板G4‘上===部取上部搬 送:二 达臂=置，'基板Gl於调下部搬職弘㈣:口下。P運 f則上部搬運梭规卸除之第4基板G4與於此ff剛自上 Γΐίί之第3基板&進行更換㈣〜t3)。此時，使^門It成Ϊ =下4運送臂ML將處理完畢的第3基板f 2閒置之一方 =單替=’使用上部運送臂晴處理以= 其次，單片運送機構32對單月處理單元B進行存取’將剛自單 22 ⑧ 201232693 畢ί第2基板二與:後-程序(熱處理)已完 運送臂MU將處理完畢之第3 ^。時’先使用閒置之-方之上部 :二部運：： 第5基板細到達下====取下部搬運舰載有 送臂ml自上^圖應所示之動作使用下部運 送臂用上部運 處理)已完畢之第4基板程序(成膜 單片處理Ϊ元A。 崎送臂胤將處理前之第5基板G5送入 元B。經送ώ之第^应以將处理別之第4基板G4送入單片處理單 運狐ΪΪ出另基在下部運送觀上等待朝下游侧下部搬 上載：二;^ 1_早片運迗機構之傳送形態2] 之第2士基板傳送形態。在此，單片式處理^ =士時—間心之時間差分別需2Ts基板停留時間(苴中 w甲處叫間)之前一程序之單片處理A(單片式作用極成ϋ 23 201232693 τ )之日’單#式處理單元Bl、B2、B3重複進行因產距時間 >^式熱處理^別而爪基板停留時間之後—程序之單片處理B(單 由輩，在該區域内所有單片處理結束之第1基板Gi PKSL、軍ί為? 2,下部f送臂紙固持，等待朝下游側下部搬運 iC#主$一4 /、第3及第4基板、〇3、〇4分別停留於在該區域 ϋί:序之單片處理單元Bl、B2、B3内。第5及第6基板〇5、 士6分留於在_域内負責前—程序之單片處理單元Αι、A2内。此 ϋ ΐϋΓϊ1穿梭運送部38)之上部搬運梭jsu載有第7基板仏而 到達上部卸料位置^。 、、，*此後單片運送機構32馬上藉由圖i〇A所示之動作^黃=南上部運 ^應自上f側上部搬運梭JSU卸除第7基板&，同時使用下部運 送#ML載置第1基板化於下游侧下部搬運梭KSL(t=ti〜^)。 接著，單片運送機構32對單片處理單元^進行存取，將剛自 上游側上部搬運梭JSU卸除之第7基板g7與於此時點臨近前一程序 (成膜處理)元畢時點之第5基板g5進行更換(t=t2〜t3)。 „其次丄單片運送機構32對單片彝理單元氏進行存取，將剛自 单片處理單出之第5基板〇5與於此時點臨近後—程序(熱處 理)完畢時點的第2基板G2進行更換。另一方面，上游側 1穿梭運送部38)之下部搬運梭肌載有針基板仏而到達下部卸料 位置 WL(t=t〇 〇 此後單片運送機構32馬上藉由圖log所示之動作使用下部運 ^臂ML自上游侧下部搬運梭jSl卸除第8基板G8，同時使用上部運 送臂MU載置第2基板(¾於下游側上部搬運梭KSU(t=t5〜t6)。 接著’單片運送機構32對單片處理單元入2進行存取，將剛自 上游側下部搬運梭JSL卸除之第8基板G8與於此時點臨近前一程序 (成膜處理)完畢時點的第6基板G4進行更換(t=t6〜t7)。 〇〇其次^單片運送機構32對單片處理單元氐進行存取，將剛自 單片處理單兀八2送出之第6基板G6與於此時點臨近後一程序(熱處 理)完畢時點的第3基板G；3進行更換(t=t7〜to。經送出之第3基板& 24 ⑧ 201232693 在下部運达臂ML上等待朝下游側下部搬運梭版運出 面，上游側(第1穿梭運送部3幻之上部搬運梭Jsu 產距時叫絲準i缝複 二距二間^基準周期依上述第1傳送形態或 上达第2傳3^_开>悲重複進行一連串基板傳送動作。 [單片運送機構之傳送形態3] 就圖14作為第3傳送縣制在配置有 52Α、52Β之第3區域内第3單片運送機構34進行之一連串 動作。 此等2座分批式鍛燒單元52Α、52Β如圖15所示，交互 需τΝ分批處理時間絲板停㈣相(淨鍛麟間Ta+冷卻時間 同-分批式鍛燒處理。在此，若分批處理片數為N片（例如獅， 則在產距時間ts與分批處理時之間存在有Tr=n*Ts之關係。 又，圖14中，為求便於說明與理解，略稱一方分批式 ^2^為分批處理單元D1 ’略稱另—方分批式锻燒單元52b為分批 處理早7GD2。圖中，例如時點t〇〜t4之期間及時點t4〜t8之期間相當於 產距時間Ts。 、 、圖14中，時點t〇係-方分批處理單元切剛結束分批處理 式鍛燒處理)後。此時，藉由單片運送機構34之下部臂胤自 Dl(基板舟98之第i開槽)送出第！基板Gi，等待朝下游侧(第3穿梭 运部4¾之下部搬運梭KSL運出。又，代替第丨基板Gi將第2〇1基板 &01送入單元Dl(基板舟98之第1開槽）。第2〜第1〇〇基板& 停留，分批處理單元Dl(基板舟98之第2〜第1〇0開槽）内。另—方 面，第101〜第200基板G101〜G2〇0停留於另一方分批處理單元D2(美 板舟98之第1〜第1〇〇開槽)内，處於分批處理(分批式锻燒處理)剛^ 始之，況下。此時，上游側(第2穿梭運送部4〇)之上部搬運梭Jsu 載有第202基板G2G2而到達上部卸料位置wu。 25 201232693 、、此後’單片運送機構34馬上藉由與圖1〇A相同之動作使用下部 運送臂ML將第1基板G】載於下游側下部搬運梭1^1^，與此同時使 ，七部運送臂圆自上游側上部搬運梭jsu卸除第2〇2基板 〇202(^1^2) ° m、★接單片運送機構34對分批處理單元01(基板舟98之第2開 ΐ ί订ί取’將剛自上游側上部搬運梭JSU卸除之第搬基板G202 與分批處理完畢之第2基板&進行更換㈣㈤。 ㈣部搬運狐社載置第挪基板^而到達下 姑由此後ΐ片運送機構32馬上藉由圖11A及圖11B所示之動作先 諸达臂狐將第2基板Gl載於下游侧上游搬運梭KSU，接 G2〇3(t=t5〜d運送臂應自上游側下部搬運梭肌卸除第203基板 才晶)進H取单片^機構34對分批處理單元Dl(基板舟98之第3開 凡畢第基板〇3進行更換㈣〜t7)。 邻卸^立上f隨運梭JSU馬上載置第204基板—而到達下 相=動作。 後亦依產距時間18之周期重複進行與上述 舟機構34最終對分批處理單元哪板 15所示’另一方分批广已j之第100基板G1〇〇進行更換。如圖 以後，單片、軍、、,1 ^早凡剛好在此時結束1次分分批處理。 梭JS臟依序卸除期自上游侧搬運 所示藉由與上述相同之齡# 第基板G3『G·，如圖15 批處理單肋2 叫之職依序將其送入分 、隹说 早逐—與處理完畢之第101〜第200美軛G 〇Gj is on platform 74. In the second type (Fig. 6B), the pin 88 provided in or near the rotary driving portion is also the same as the above-mentioned lifting pin 86, and cooperates with the transport arm ^, ^ to perform the recording 82 for the secret thief. And Figure 7 shows the type of monolithic processing unit included in the substrate processing apparatus. This third type is used in the one-piece heat treatment unit 5, so that the sheet 90 on which the sheet substrate G is placed and conveyed can be slid into the main body heat treatment chamber as a sliding type. During the heat treatment, the sheet 90 is placed outside the bulk heat treatment chamber 92 (6). Moreover, after the heat is finished, the sheet 90 enters the body heat treatment chamber 92 to receive the substrate G, and the substrate G of the substrate is removed and exposed to the atmosphere for a certain period of time to be cooled (hereinafter. The lift pin 94 accommodated in the plate 90 cooperates with the transport arms MU and ML to perform a lifting operation, and the substrate and the next substrate g are replaced on the plate 90 in the same manner as described above. 8 shows a configuration example of a batch type calcining unit 52A (52B) including the substrate processing apparatus of the embodiment. The batch type calcining unit 52A (52B) is a vertical processing apparatus, and comprises: a cylindrical shape The vertical heating furnace 96; the vertical substrate boat 98 can be accommodated in the heating furnace 96; the boat support arm 102 supports the substrate boat 98 from the bottom up through the heat insulating cylinder 1; and 15 201232693 lifting mechanism l〇4 In order to allow the substrate boat 98 to enter and exit the heating furnace 96, the boat support arm 1〇2 is moved up and down. The plurality of substrates supporting the rods 1〇6 extending in parallel with the substrate boat 98 form a majority of the way of hearing the money. (For example, 固 ^ plate G holding groove (grooving). ~ heart 丞 soil this batch type calcining unit 52 _), - The batch type calcining treatment, once the surname is bundled, is not shown, that is, the substrate boat 98 is taken out to the outside of the heating furnace 96. The transporting arms MU and ML of the transport mechanism 34 are sequentially slotted to the substrate. In the access, the processed substrate Gi and the pre-process substrate G· are replaced one by one. [Basic Operation of Monolithic Transport Mechanism] ^ Each of the single-piece transport mechanisms 3〇, 32, 34, and the area will be described with reference to FIGS. 9A and 9B. Each of the batch type >1 type single-segment fields is accessed, and the operation of the substrate Gi and the substrate q before the processing are replaced. First, as shown in (8) of FIG. 9A, the single piece When the two transport papers return to the original position or the double-moving position, the transport mechanism moves and rotates respectively, and the pure delivery arm should be _ towards the access 忿, (not shown). Two transport arms, one of the papers, one arm = arm ML, the processing unit of the access object holds the base before the processing - ^, that is, the upper transport arm does not have the idleness of the substrate G. Align the height position for the substrate transfer. ~ Next. The single-piece transport mechanism is idle as shown in (9) of Figure 9A. The arm MU is moved forward or extended to the forward position, and the upper transfer arm MU receives the processed substrate Gi from then on. Then, if it is moved back or shortened to the original position, the processing unit & At the end of the board, the monolithic transport mechanism is as shown in Figure 9. Immediately, the movement is moved in and out (the figure is moved up by 2 - the lower part of the transport arm is used for the transfer of the substrate.) e) Show 'let the lower transport arm advance or extend the movement ^ t The front substrate Q is fed and transferred to the processing unit. Again, as shown in Figure 9b: 16 8 201232693 Let the idle transport arm Ml back or shorten to move to the original position. In this embodiment, each of the single-piece transport mechanisms 3, 32, 34, and 36 can perform the following operations simultaneously or in parallel using the two transport arms MU, ML: from the upstream side of the transport arm, the shuttle JSU/JSL or the substrate One substrate G is unloaded under a 20 (20 U/20 L); and one substrate G is placed on the downstream side of the transport arm to transport the shuttle KSu/KSL or the substrate repeater 26 [26U/26L). In the single-sheet transport mechanism 30, 32, 34, and 36, the upper substrate transport shuttle shuttles the one substrate Gj from the upstream side, and the first substrate Gi is placed on the downstream side lower transport shuttle KSL. . At this time, as shown in FIG. 1A(a), the single-piece transport mechanism lifts and rotates the transport bodies 60U and 60L in a state where the two transport arms MU and ML are returned to the home position or the double-moving position. When the upper transport arm _ faces the upstream upper transport shuttle JSU, the lower transport arm ml faces the downstream lower transport shuttle KSL. At this time, the upper transfer arm MU is in an idle state, and the lower transfer arm ml holds the substrate Gi. Further, the upstream upper transfer shuttle JSU carries the substrate Gj, and the downstream lower transfer shuttle KSL is in an idle state. Secondly, as shown in (b) of Figure 1A, the Shai single-piece transport mechanism causes the upper transport arm to move in or out, and the shuttle JSU is removed (received) from the upstream upper side while the lower arm is removed. In the front of the ML, the wire is moved, and the lower part of the downstream side of the substrate is conveyed by the shuttle KSL. Then, as indicated by _八(()), the upper transport arm and the lower transport arm ML return to the original position. The figure is not displayed in the single-sheet transport mechanism 3〇, 32'34, 36, and the first substrate Gj is removed from the upstream side of the transport shuttle JSL. At the same time, the shuttle Ksu is placed on the downstream side, and one substrate is placed. Gi's action. At this time, the single-piece transport mechanism is as shown in (8) of _B, and the two transport arms MU and ML are returned to the original position or the double-moving position, respectively, and the transport is moved and rotated. Moving, the lower transport arm 1^ faces the upstream side. The upper transport arm hall of the 'sport JSL' faces the upper side of the downstream side to transport the shuttle ksu. This arm is in an idle state. The upper transport arm _ holds the substrate Gi. And / : The lower transport shuttle JSL carries the substrate q, and the downstream upper transport shuttle KSU is idle. Eight times, the single-piece transport mechanism, as shown in (b), causes the lower transport arm fox front 17 201232693 to move in or out, and removes (receives) the base plate Gj from the upstream lower transfer shuttle JSL, and at the same time, the upper transport arm The MU advances or elongates, and mounts (transfers) the substrate Gi to the downstream upper upper transport shuttle KSU. Then, as shown in (c) of Fig. 10B, the upper transport arm mu and the lower transport arm ML are returned to the original position. In this embodiment, each of the single-piece transport mechanisms 3, 32, 34, and 36 serves as another transport mode, and the following operations can be performed in parallel or sequentially: one of the two transport arms MU, ML, for example, the upper transport arm legs The upstream side transport shuttle JSU/JSL or the substrate mounting table 2〇 (2〇U/20L) unloads one substrate G; and the other one, that is, the lower transfer arm ML, mounts the sheet substrate G on the downstream side transport shuttle KSU/ For example, the upper transfer arm MU is used to remove the cymbal substrate Gj from the upstream upper upper transfer shuttle jSU, and the lower transfer arm ML is used to mount one substrate on the downstream lower transfer port. In the case of KSL, the same parallel or simultaneous operation as in Fig. 1A can be performed. However, the upper transfer arm MU is used to remove the cymbal substrate q from the upstream lower transfer shuttle JSL, and the lower transfer arm ML is used to mount one substrate. When Q transports the shuttle on the downstream side, it operates in the order shown in Fig. HA and Fig. 11B. First, 'the single transport mechanism is as shown in (a) of Fig. A to transport the main body 6〇1; l Lifting the movement and rotating the shaft, and the lower part of the base thief is facing the upper part of the shuttle KSU. As shown in (b) of gj11A, the lower transport arm is moved forward or extended, and the substrate Gj is placed (transferred) to the downstream upper transport shuttle Ksu. Then, as shown in (c) of FIG. The arm ml is returned to the original position. Secondly, as shown in (9) of i1B, the single-piece transport mechanism causes the transport body 6〇u, and the idle transporting arm is transported toward the upstream side. /?_人', as shown in (4) of UB, the upper transport arm _ advancing or elongating movement 'removing (receiving) the substrate from an upstream lower transport shuttle JSL. Then, as in (f) of 11B, it is not 'held' The substrate transport arm is rounded back to the original position. [Processing sequence of the entire program] Here, the substrate processing device towel is processed on the wafer substrate k in the first step of the loader 12, and the loader transport mechanism 18 The IS 8 201232693 fH1 substrate Gn ' from the platform is placed on the substrate repeater 20, that is, either the upper loading table 20U or the lower mounting table 2 〇 L. Then 1 The single-chip transport mechanism 30 is placed on the substrate on the upper stage 2, and the transport arm T receives the substrate Gn' The substrate is placed on the lower stage 20Li. The P transport arm ML collects the substrate, and the substrate is sent to the single-chip clearing day before the substrate & is sent to the cleaning unit 44. The other substrate that has just been cleaned by the single cleaning unit 44 is sent out. + The single-chip cleaning unit 44 is used to mount or hold the substrate to the processed surface on the platform: and 82 by the cleaning head 76 (84). (Blanket _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The sheet washing unit 44 sends the substrate Gn′ and feeds it into the second region f, which is also placed in the second region, and then the substrate is fed into the far-shirt patterning unit 46. First, the other substrate that has just been processed by the unit 46_ is sent out. In the monolithic patterning unit 46, the substrate Gn processed surface (blanket-type transparent conductive layer) placed on the stage 74 is irradiated by the laser beam H6 by, for example, a laser side method. Patterning process. By this patterning process, the patterned transparent electrode 200 is opened on the substrate Gn by the processing surface. Further, the transparent conductive layer or the transparent electrode 2 is made of, for example, fluorine-doped Sn 〇 2 (FT 〇) or ^ tin oxide (ITO). Further, the transparent substrate 2〇8 of the substrate 〇 base material is made of a transparent inorganic material such as stone or glass, or a polyg, acrylic or polyimide plastic material. When the patterning process of the single-chip method is completed, the first wafer transport mechanism 30 and the single-chip patterning unit 46 feed the substrate Gn, and place it on the first shuttle transport, and the upper transporter. See the shuttle SU or the lower transport shuttle. The upper conveying portion 38 of the first conveying portion 38 on which the substrate Gn is placed or the lower conveying shuttle 31 is moved from the delivery position (FU or FL) to the discharging position (wu or 1). The substrate Gn arrives at the discharge position of the shuttle transport unit 38 (stomach or 19 201232693 sheet transport mechanism 32, except for the substrate 仏, and feeds it into the second region of the film forming unit 48 ° at this time Also, before the substrate α is fed into the one-piece type as before 48, the other substrate which has just completed the film formation process of the working electrode (semiconductor fine particle layer) of the unit 48 is sent out. By performing, for example, screen printing*, a two-counter film formation process is performed on the processed surface (patterned transparent electrode 200) of the substrate Gn on the printing substrate 。 。 。 。 74. By the film forming process, on the substrate Gn The semi-conducting layer of the processed surface is in the form of a semiconductor layer such as Ti 〇 2 and Sn 〇 2. At the end, the second monolithic conveyor feeds the substrate from the monolithic working electrode forming unit 48 and feeds it into the monolithic heat treatment unit 5 on the other side of the transport line 28 in the first domain. : soil f Gn is inserted into the monolithic heat treatment unit 5 ,, first heat treatment of this unit 5 〇 The other substrate of the bundle is fed out. In the monolithic heat treatment unit 50, when the substrate Gn-^ is heated at a predetermined temperature in the main body heat treatment chamber 92, the semiconductor fine particle layer of the substrate-treated surface is baked. Further, after baking, The substrate is fed out from the bulk heat treatment chamber 92 by the plate (4), and the substrate Gn is cooled to a normal temperature on the plate 90. The heat treatment is used to enhance the semiconductor device 4. As described above, the heat treatment of the single-chip method is completed. 2 The single-piece transport mechanism 32 is fed from the single-chip type, the pain-receiving unit 5, and placed on the second shuttle transport unit 40. The transport shuttle SU or the lower transport shuttle SL. The transport shuttle Su or the lower transport shuttle of the second shuttle transport unit 40 is transported to the unloading position (wu or WL) from the transport position u or FL). The 苐3 single-piece transport unit 34 removes the substrate Gn that has reached the unloading position (wu or WL) of the second shuttle transport unit 4, and sends it to the batch-type calcining unit 52 in the third region. It is the order of the person. The scale is loaded on the substrate Gn into the batch-reading and burning unit 52A (or 52B). The fourth unit is taken out from the unit 52, and the other substrate is processed by the sinter, and is sent out of the unit. It. The batch type calcining unit 52A (52B), the batch processing number (10) sheet) processing the front substrate 201232693, the plate Gr^oo (including the substrate Gn therein) are all in the substrate boat 98, and then by the lifting mechanism 104 causes the boat support arm 102 to ascend, and the substrate boat 98 is inserted or loaded into the heating furnace 96. In the soil, the substrate Gr on the substrate boat 98 is heated at a predetermined temperature in the heating furnace 96. Gr*Gioo is determined for a predetermined time. As a result, a sintered body of the semiconductor microparticle layer 204 is obtained on each of the substrates Gi to G_ to be processed. Once the calcination process in the batch mode described above is completed, the lift mechanism 1〇4 lowers the boat support arm 102, moves the substrate boat 98 out of the heating furnace 96, and exposes the substrate to the atmospheric space for a certain period of time to cool. The third monolithic transport mechanism 34 accesses the batch type calcining unit 52A (52B) which has been subjected to one batch batch calcination treatment (calcining + cooling) in accordance with the period of the production time Ts, and is used in the substrate boat. Each of the slots on the 98 is replaced with the processed substrate G GG. The substrate Gxian~G(10) is treated with the treatment of the batch heat treatment next time. In this way, the substrate for the calcination process is sent out from the batch type calcining unit 52A (52B) by the third single sheet conveying mechanism 34, and is carried on the upper shuttle conveyance unit 42 to carry the shuttle SU or the crucible. Lower transport shuttle SL. The transport shuttle SU or the lower transport shuttle SL of the fourth shuttle transport unit 42 on which the substrate Gn is carried transports the transport plate from the transport position (FU or *FL) to the discharge position (WU or WL). The soil g fourth single sheet transport unit 36 reaches the discharge position of the third shuttle transport unit 42 (the stomach or the substrate Gn is removed, and is sent to any of the single-piece dye adsorption unit 54 in the fourth region. At this time, before the substrate Gn is fed into the monolithic dye adsorption unit 54, the unit 54 is taken out of the substrate which has just finished the dye adsorption treatment, and the fresh element is a monolithic pigment which is fed into the substrate Gn. The adsorption unit 54 irradiates the surface of the substrate Gn that is rotationally moved on the square transfer tray 82 by a nozzle head material (a porous semi-conducting layer: a layer, a dye solution, and a monolithic dye adsorption adsorption treatment). 'Zengshousu (10) substrate (^ is treated in township ^^204 〇X, j sensitizing pigment dissolved in the secret. As a sensitizing pigment, it is used as a metal complex or a cyanine pigment, etc. An organic dye such as a pigment, for example, an alcohol, an ether, an amine, a hydrocarbon, or the like can be used as the solvent. The mechanism is as described above for the single-layer dye adsorption treatment, and the fourth single-sheet delivery 201232693 36 is from the monolithic pigment. The adsorption unit 54 sends the substrate α and places it on the base relay station 26, that is, the upper portion. The stage 26U or the lower stage is chaotic. The rear unloader transport mechanism 24 immediately picks up any of the substrates Cn on the platform 22 from the substrate repeating station 26. [Transmission mode η of the single-piece transport mechanism] The second single-chip transport mechanism 32 transports the shuttle KSU/KSL to the downstream side from the upstream side by the JSU/JSL in the first transfer mode. It is suitable for the two-side processing unit, that is, the one-piece working film forming unit 48 and the heat treatment unit 5(), respectively, in the area 2 of the 帛2 area. The film forming unit 48 and the single-plate type of the slab are subjected to a single J" for each base machine; two = y: ming and understanding, the singular action is extremely positive = the sheet is processed early, and the sheet-like heat treatment unit 5 is slightly () is a single t - ® figure 'in the time _, the single-chip processing board in the field clear is good early; i transporting mechanism η lower part of the transport arm paper, etc. The strict stop lies in the area responsible for the subsequent processing Within 7LB, the third substrate G is in the single-chip processing unit A of the ship's early stage. In this case, the upstream side (the J:, the month J (then) spear Wang Yun _ carries the fourth substrate G4' on the === part of the upper transfer: Erda arm = set, 'substrate Gl in the lower part of the transfer of the post (four): under the mouth. P transport f the upper transport shuttle remover The fourth substrate G4 is replaced with the third substrate & ff from the top Γΐίί (4) to t3). At this time, the gate 4 is made Ϊ = the lower 4 transport arm ML idles the processed third substrate f 2 One side = single replacement = 'Using the upper transport arm to clear == Next, the single-chip transport mechanism 32 accesses the single-month processing unit B' will just come from the single 22 8 201232693 Bi 2nd substrate 2 and: after - program (Heat treatment) The third step of the finished transport arm MU will be processed. When the first use of the idle - the upper part of the side: the second part of the operation:: the fifth substrate is finely reached ==== Take the lower carrying carrier with the delivery arm ml from the top of the figure should be shown as the action using the upper part of the lower transport arm The fourth substrate program that has been completed (film-forming single-chip processing unit A. The sputum arm 送 sends the fifth substrate G5 before processing to the element B. The ώ ώ ^ ^ ^ ^ ^ 4 The substrate G4 is sent to the single-chip processing single-loaded fox. The other base is placed on the lower transport view and waits for the lower-side lower uploading: 2; ^ 1_ early transport mechanism 2] the 2nd board transfer form Here, the single-chip processing ^ = Shi Shi - the time difference between the two cores requires 2Ts substrate dwell time (in the middle of the w), the single-chip processing A before the process (single-chip action is extremely ϋ 23 201232693 On the day of τ), the single-type processing units B1, B2, and B3 repeatedly perform the single-chip processing B (single generation, in the area) after the pawl substrate residence time due to the production time > All the first substrates Gi PKSL and ZH ί are 2, and the lower f is held by the arm paper, and the iC# main $4 / The third and fourth substrates, 〇3, and 〇4 respectively stay in the single-chip processing units B1, B2, and B3 of the region 。ί: the fifth and sixth substrates 〇5, 士6 minutes remain in the _ domain Responsible for the pre-procedure single-chip processing unit Αι, A2. The ϋ1 shuttle transport unit 38) the upper transport shuttle jsu carries the seventh substrate 仏 and reaches the upper discharge position ^., ,,* thereafter the single-chip transport mechanism 32. Immediately by the action shown in Fig. 〇A, the upper part of the south is transported from the upper f-side transport shuttle JSU, and the seventh substrate & The lower-side conveyance shuttle KSL (t=ti~^). Next, the single-piece conveyance mechanism 32 accesses the single-piece processing unit 2, and the seventh substrate g7 that has just been removed from the upstream upper transfer shuttle JSU is at this point. The fifth substrate g5 adjacent to the previous program (film formation process) is replaced (t=t2~t3). „Secondly, the single-chip transport mechanism 32 accesses the single-chip processing unit, and will just come from the single The fifth substrate 〇5 which is processed by the sheet processing is replaced with the second substrate G2 at the point when the program (heat treatment) is completed immediately after the point is approached. The lower part shuttle transporting portion 38) lowers the transport shuttle muscle carrying the needle substrate 仏 and reaches the lower discharge position WL (t=t〇〇 thereafter, the single-piece transport mechanism 32 immediately uses the lower transport arm by the action shown in the diagram log ML removes the eighth substrate G8 from the upstream lower transfer port jS1, and mounts the second substrate (the downstream upper transfer shuttle KSU (t=t5 to t6) using the upper transfer arm MU. Next, the 'monolithic transport mechanism 32' The eighth substrate G8 that has just been removed from the upstream lower transfer shuttle JSL is replaced with the sixth substrate G4 at the point when the previous process (film formation process) is completed (the next substrate G4 is removed). t=t6~t7). Next, the single-chip transport mechanism 32 accesses the single-chip processing unit ,, and the sixth substrate G6 that has just been sent from the single-chip processing unit 28 is adjacent to the point at which the next program (heat treatment) is completed. 3, the substrate G; 3 is replaced (t=t7~to. The third substrate & 24 8 201232693 is sent to the lower arm ML and waits for the downstream side to carry the shuttle transport surface, the upstream side (the first shuttle transport) Part 3: The upper part of the shuttle shuttle Jsu is called the silk thread. The reference cycle is repeated in the first transfer mode or the second pass 3^_opening. [Transmission Mode 3 of Monolithic Transport Mechanism] As shown in Fig. 14, the third transport mechanism 34 performs a series of operations in the third region where 52Α and 52Β are arranged as the third transmission county system. The firing units 52Α, 52Β are shown in Fig. 15, and the interaction needs to be τΝ batch processing time silk plate stop (four) phase (the net forging between the Ta + cooling time and the batch-type batch calcination treatment. Here, if the number of batch processing is For N pieces (for example, lions, there is a relationship between Tr=n*Ts between the production time ts and the batch processing. In Fig. 14, for convenience of explanation and understanding, abbreviated one batch type ^2^ is a batch processing unit D1 'slightly another batch batch type calcining unit 52b is batch processing early 7GD2. In the figure, for example The period from time t〇 to t4 corresponds to the period of time t4 to t8 corresponding to the production time Ts. In Fig. 14, the time point t〇-the batch processing unit is just after the batch processing type calcination process is completed. At this time, the lower substrate arm is fed from the lower arm of the single-piece transport mechanism 34 from D1 (the i-th slot of the substrate boat 98), and is waited for the downstream side (the third shuttle transport portion 43⁄4 is transported by the lower shuttle KSL). Further, instead of the second substrate Gi, the second 基板1 substrate & 01 is fed into the unit D1 (the first groove of the substrate boat 98). The second to the first 〇〇 substrate & stay, the batch processing unit D1 ( In the second to the first 〇0 slot of the base boat 98. On the other hand, the 101st to the 200th substrates G101 to G2〇0 stay in the other batch processing unit D2 (the first to the first of the board of the boat 98) In the case of the batch processing (batch-type calcination process), the upstream side (the second shuttle transport unit 4〇) is transported by the shuttle Jsu. 202 The plate G2G2 reaches the upper discharge position wu. 25 201232693, and thereafter, the single-piece conveyance mechanism 34 immediately carries the first substrate G on the downstream lower conveyance shuttle using the lower transfer arm ML by the same operation as that of Fig. 1A. 1^1^, at the same time, the seven transport arm circles are removed from the upstream upper transport shuttle jsu to remove the second 〇2 substrate 〇 202 (^1^2) ° m, ★ connected to the single-chip transport mechanism 34 The processing unit 01 (the second substrate of the substrate boat 98 is ' 订 ' ' ' ' ' 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 。 。 。 。 。 。 。 。 (4) The Department of Transportation, the fox office is placed on the second substrate, and the sputum transport mechanism 32 is immediately moved by the arm foxes on the downstream side by the action shown in Figs. 11A and 11B. Shuttle KSU, connected to G2〇3 (t=t5~d transport arm should be removed from the upstream side lower shuttle muscle to remove the 203th substrate crystal) into H to take a single piece ^ mechanism 34 to batch processing unit Dl (board boat 98 The third opening of the second substrate 〇 3 is replaced (four) ~ t7). The adjacent unloading ^ stands on the f with the shuttle JSU horse on the 204th substrate - and reaches the lower phase = action. Thereafter, the 100th substrate G1〇〇 of the other batch processing unit shown in the above-mentioned boat mechanism 34 is finally repeated in accordance with the period of the production time interval of 18, and the 100th substrate G1〇〇 of the other batch is widely replaced. As shown in the figure, the monolithic, military, and, 1 ^ early, just ended at this time, sub-sub-process. Shuttle JS dirty discharge period from the upstream side shown by the same age as above # The first substrate G3 "G ·, as shown in Figure 15 batch single rib 2 called the order in order to send it to the points, 隹 said Early and after - with the processing of the 101st to 200th yoke G 〇

Gi〇i〜G2〇〇依產距時間丁 第101第200基板 朝運送線28下游側^送周膽序载於下游側搬運梭KSU/KSL而 26 ⑧ 201232693 此實施形態中’在—對分批處理單、m(分批式锻燒單元 =、52B)之間交叉交互重複進行分批處理(鍛燒處理)與基g更換 動=。又’基板更換動作中，基板收納部(基板舟98上的開槽)中處 理70畢之基板與處理前基板之更換係以產距時間^為 一基板(逐--開槽)重複進行。 柯』、 [單片運送機構之傳送形態4] 在配置有1台或複數台單片式色素吸附單元54之第4區域 4早片，運送機構36進行之一連串基板傳送動作基本上與上述· 域=第3單片運送機構34之一連串基板傳送動作(第3傳送形態^ 亦即’上游側(第3穿梭運送部42)之上部搬運梭JSU 一旦截 上部卸料位置衝，其後第4單片運送機構3—6馬上即 精由與圖10Α相同之動作同時進行下列動作： 將固持於單方運送臂例如下部運送臂ML之處理完畢之另一 基板載於下游側基板中繼台26之下部載置台26L ;及 使用另-單方之上部運送臂廳自上部搬運梭观卸除基板 0 接著’單片運送機構36對於此時點最 之單片式色素吸附單㈣進行存取個自上游彳/上=，運 P除之基板Gn與處理完畢之基板Gp進行更換。 :方之下部運送臂ML將處理完畢之基板_該單片式色』5 嫩侧將處理前之織 其後上游侧下部搬運梭JSL馬上載置第n+ 部却料位置肌。其後，第4單片運送機構36馬=^^ 所示之動作先躲下部運送fML之處 圓^ 基板中繼败上置伽，接細上; ,於_ 最崎 肌卸除之基板Gn+1與處理完畢之另一基碼進行更換。此時，= 27 201232693 為基^重複產距時叫 L貫施形態中之主要作用效果] 制實施形態之基板處理裝置中，在運送線28上，依 1序Of排列成一列配置有複數(第1〜第4)單片運送機構 34 : 36與複數(第1〜第3)穿梭運送部38、40、42。 _ .，仃存取，使基板0逐一出入各單元。第4單片運送機槿 =自上游側⑽朝下游側⑼運 =2在上部/下部搬運梭·其中任一 ^亭留 之行置ίίΪΡ可’可不需在意第2單片運送機構32 =動另方面，苐2早片運送機構32之一方 「SU/SL其中任-者停留於卸料位置卿肌 ^ G即可’可不需在意第運送娜G側之狀況 卩除基板 運送基缺第2單片 部42交換某拓機構之間’及在央隔著第3穿梭運送 亦成立 28 201232693 下游側單 位置WU/WL之期間内卸除基板夂^中=者停留於卸料 構下游側單片運送機 且各單片運送機構30、32 送基板G進行運送本體6〇u、6〇 於:別在各負責區域内傳 高效=傳送基?:且可減少赶或捲起^4。、36可分別高速且 僅裝載二 二 46〇6 之 移動，故構造及她刚單，產生微粒亦少。卩。.運概胤水平 重複進行财同^造及nnnn相反聊或相反相位 施形態已=成=化。特別是於此實 .基置納式處理單元 i if為ί此，所有運送線28上於:部£=片基 =ΐ:ΐΐ ⑺此…域機運送機構18之運送工作大幅少於單片運 29 201232693 之運送工作，故可輕易迴避在兩者之間基板G裝卸之競合。且即使 裝載機運送機構18在裝載機12内沿系統寬度方向(γ方向)水平移動 時產生微粒，或是捲起微粒，亦係處理站丨〇外之區域，即使假設 微粒附著未處理基板G，亦可藉由第丨程序之單片式清洗單元44去 除之，故不會造成妨礙。相同原.則亦適用於設在運送線28下游端 侧之固疋基板中繼台26及卸載機運送機構24。 [其他實施形態或變形例] 上述實施形態之基板處理裝置中，亦可將裝載機12側之基板 中繼台20(20U、20L)及/或卸載機14側之基板中繼台26(26u、26L) 取代為與上述穿梭運送部38、40、42相同之穿梭運送部。 一作為上述實施形態中基板處理裝置之發展形，例如圖16所 ^亦可將匯集使用於色素增感太陽電池(圖17)之製程之所有處理 早兀之處理糸統加以建構。 此處理^系、，中，如上述實施形態藉由第丨處理站1〇製作透明基 板208侧之第1疊層組件(208/200/204)，並藉由第2處理站11〇製作對 1基反210側之第2疊層組件(210/205/202)，藉由貼合單元112貼合 第1豐層組件(2〇8/2〇〇/2〇4)與第2疊層組件(21〇/2〇5/2〇2)。 在此，於第1處理站1〇，與上述實施形態相同，作為未處理之 基jG自裝載機12依產距時間Ts之週期將形成有透明電極2〇〇圖案 ，前之毯覆式透明導電層之透明基板2〇8加以置入。另一方面，於 第2處理站110，作為未處理之基板裝載機114依產距時間&之 週期將形成有基底電極2〇5圖案化前之毯覆式導電層(例如FT〇)之 對向基板210加以置人。裝載機114具有與裝載機12相同之構成及 功能’包含裝載機運送機構116。 第2處，站110包含自裝載機114朝貼合單元112沿系統長邊方 向(X方向)筆直延伸之運送線118，夾隔著此運送線11δ於其左右兩 侧配置有後述多數及多種類處理單元丨34〜142Β。 〇〇在，送線118上，交互排成一列配置有複數(圖示例中係3座) 皁片運，機構U0、I22、m與複數(3座)穿梭運送部126、128、13〇。 更。羊、'、田而。’弟5單片運送機構12〇就製造流程而言位於運送 30 201232693 201232693 接裝載機114之基板巾繼台132與第5穿梭 域中分別配置有。於此第5單片運送機構120左右兩側展開之第1區 面；^口 ·數台單片式清洗單元m，絲逐—清洗基板G被處理 面上L口毯或台電^式牵圖/^元136 ’用來逐—將基板Η被處理 设層圖案化為基底電極2〇5。 謂運送機構122位於運送線118上較第5單片運送機構 此第H片二，5f_^P1261^6穿梭運送部128包夾。於 板“碑f向片電 =單元140 ’用來逐-供烤塗布後基 ΙΊ/ί運送機構124位於運送線118上較第6單片運送機構 此第7^ 第6穿梭運送部128與第7穿梭運送部130包爽。^ 上形成於被處理面之對向電極2〇2。 u υυ片）基板η 中之ί Γί 3 ΐ送機構12Q、122、124具有與上聰處理站1〇 機構3G、32、34相同之構成，使相同作用奏 ί第f第3 ί部126、m、BG具有與上述第1處理站10中 ^ f私部38、4G、42相同之構成，使_作用奏效。 於第2爽理站110，基板η於運送線118下行並同時在第5〜楚 ”，定處理單元依序接受—連串單>5處理或分批處理。又， 依產距日㈣丨从週期自f 7紐運送部13()之 ===ΪΙ_4收取成為第= 31 201232693 片處理或分批處理。又，依產距時間丁8之週期自連接第4單片運送 機ί 36之第4穿梭運送部43之上部及下部卸料位置(衝舰)由貼 合單元112之運送機構144收取成為第丨疊層組件(2〇8/2〇〇/2〇4)之處 理完畢之基板G。 貼合單元112使用例如黏接劑將自第丨處理站1〇取入之第丄疊 層組件(208/200/204)與自第2處理站11〇取入之第2疊層組件 (210/2G5/2G2)貼合，-體形成疊層組件(2G8/2⑻/2G4/2()2/2G5/21〇)。 將此經一體化之豐層組件(208/200/204/202/205/210)送往下一 巧電解液注入單元146，於此單元146内對一體化疊層組件中， 更洋細來说多孔質半導體微,粒子層2〇4與對向電極2〇2之間注入電 解液。 训’於下一段封裝單元148，對一體化疊層組件施行封裝(密 胸液不漏A ’獲得係最終製品之圖17之色素增感太陽電池 位^出。此色素增感太陽電池模組G/H自卸載機14以匣盒Cs為單 又，在貼合單元112、電解液注入單元146及封鮮元148之 :用本發日月中之單片運送機構及穿梭運送部，藉由以往公 未經圖示)逐—運送基板或疊層組件或是一 變形例，亦可職統規格，以任—穿梭運送部獨 德地進行上部搬運梭之往復動作(運出、往動移動、卸料、 ϊ=))與下部搬運梭之往復動作(運出、往動移動、卸料、復動 配晉本發日种’無論於各單片運送機構周圍（貞貴區域) 分批式其中任—處理單元，在運送線上皆一律依運 形型單片運送或傳送。因此，不限於如上述實施 有處理單元與分批式處理單元之系統，於系統内所 理單元係ΞίίΪ式ΐ理單元之線上系統，或是於系統内所有處 線上以、刀收式處理單70之線上系統中皆適用本發明。且不限於 ,、、，、，將多數處理單元依製造流程順序大致橫向排成一列配 32 ⑧ 201232693 置之任意系統—部分或整體中皆可適用本發明。 之基板處理製置 【圖式簡單說明】 俯視Γ猶林發明—實施賴巾基板處理裝置_上佈局之 之可示喊於上述基板處理裝置之單片運送 f3係顯示上述單片運送機構構成之立體圖。 體圖圖顿'顯她裝於上述基板處理裝置之穿梭運送部構成之立 之第^^!_示崎於上祕減理健之單W處理單元 H/i示意顯示組裝於上述基板處理裝置之單片 機構運送臂 之第2類型圖。 ——^工私且·<~平乃式處理單元 形圖祕輪第咖單蝴理單元中編人時各部之情 形圖議係顯示第2類型單以處理單元中編入時各部之情 單元轉顯示組裝於上·板處縣置之單>1式處理 之構=齡_她驗上板翻錢之分批趣燒單元 圖9A(a)〜(C)係顯示上述單机 出入之動叙各階段圖。 _機_對於各處理單元基板 圖9B(d)〜②係顯示上 圖 出入之動作之錢段圖。 _機構姆於各處理單元基板 1_〜⑻輸謂她物綱精自上游側上 33 201232693 基板之動作與朝下游側下部搬運梭栽置基板之動作 圖10B(a)〜(c)係顯示上述單片運送機 圖llA(a)〜(c)係顯示上述單片運 圖載基板之動作舆朝下游側上部搬運梭 圖llB(d)〜(f)係顯示上述單片 動作=顯示第1傳送形態中上述單片運送機構之-連串傳送 動作= 鐵示第2傳送形態中上述單片運送機構之-連串傳送 動作示第3傳送形射上述單片運送機構之—連串傳送 更換=作對上述分批式輯單对分_燒處理及基板 之處繼料峨卿彻全程序 圖17係顯示色切敲陽電絲本構造之縱剖面圖。 【主要元件符號說明】 么' Β ' A! ' Α2、Β!、β2、β3..·單片處理單元Gi〇i~G2 产 产 第 101 101 101 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 Batch processing, m (batch type calcining unit =, 52B) cross-interaction between batch processing (calcining treatment) and base g replacement movement =. Further, in the substrate replacement operation, the replacement of the substrate and the pre-processed substrate in the substrate storage portion (groove on the substrate boat 98) is repeated with the production time (one-by-groove).柯 』, [Transmission mode 4 of the single-chip transport mechanism] In the fourth region 4 in which one or a plurality of single-chip dye adsorption units 54 are arranged, the transport mechanism 36 performs a series of substrate transfer operations substantially as described above. Field = one of the third single-sheet transport mechanisms 34, a series of substrate transfer operations (the third transport mode, that is, the 'upstream side (third shuttle transport unit 42) upper transport shuttle JSU, once the upper discharge position is flushed, and then the fourth The single-piece transport mechanism 3-6 immediately performs the following operations in the same manner as in FIG. 10: The other substrate that has been processed and held by the single transport arm, for example, the lower transport arm ML, is placed on the downstream substrate relay station 26. The lower stage mounting table 26L; and the use of the other-single upper transfer arm hall to remove the substrate from the upper transporting shuttle 0. Next, the 'single-piece transport mechanism 36 accesses the single-chip type pigment adsorption unit (4) which is the most point at this time. /Up=, the substrate Gn divided by the transport P is replaced with the processed substrate Gp. : The lower side transport arm ML will process the processed substrate _ the single-chip color 』 5 the tender side will be processed before the weaving upstream side Lower port shuttle JSL horse upload The n+th part is the positional muscle. Thereafter, the action of the 4th single piece transport mechanism 36=^^ first hides the lower part of the fML, and the substrate is relayed to the gamma, and is connected to the fine; The substrate Gn+1 for removing the most muscles is replaced with another base code that has been processed. At this time, = 27 201232693 is the main effect of the method of repeating the production distance. In the processing apparatus, a plurality of (first to fourth) single-piece transport mechanisms 34: 36 and a plurality of (first to third) shuttle transport units 38 and 40 are arranged in a row in the order line Of. 42. _., 仃 access, make the substrate 0 into and out of each unit one by one. The fourth single-piece conveyor 槿 = from the upstream side (10) to the downstream side (9) transport = 2 in the upper / lower transport shuttle · any ^ pavilion left行 ΪΡ ΪΡ ' 可 可 可 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第In the case of the intention to transport the Na G side, the second substrate unit 42 is exchanged between the extension units and the third shuttle is transported at the center. 28 201232693 During the period of the downstream single-position WU/WL, the substrate is removed. The medium-sized conveyor is placed on the downstream side of the unloading structure, and the single-piece transport mechanisms 30 and 32 send the substrate G to transport the main body 6〇u. 6〇: Don't pass the high efficiency=transfer base in each responsible area?: It can reduce the speed or roll up ^4. 36 can be moved at high speed and only load the movement of 22:46, so the structure and her just one, There are also fewer particles. 卩 . . 运 运 运 运 运 运 运 运 运 重复 重复 重复 重复 nn nn nn nn nn nn nn nn nn nn nn nn nn nn nn nn nn nn nn nn nn nn nn nn 或 或 或 nn 或 或 或 或, all the transport lines 28 on: part = = base = ΐ: ΐΐ (7) This ... the transport of the domain transport mechanism 18 is much less than the transport of a single transport 29 201232693, so it can easily avoid the substrate between the two G loading and unloading competition. Even if the loader transport mechanism 18 generates particles in the horizontal direction (γ direction) of the loader 12, or if the particles are rolled up, it is also an area outside the station, even if the particles are attached to the unprocessed substrate G. It can also be removed by the one-chip cleaning unit 44 of the third program, so that it does not cause any hindrance. The same applies to the fixed substrate relay table 26 and the unloader transport mechanism 24 provided on the downstream end side of the transport line 28. [Other Embodiments or Modifications] In the substrate processing apparatus of the above-described embodiment, the substrate relay stage 20 (20U, 20L) on the loader 12 side and/or the substrate relay stage 26 on the unloader 14 side (26u) may be used. 26L) is replaced by the same shuttle transport unit as the shuttle transport units 38, 40, and 42. As a development of the substrate processing apparatus in the above embodiment, for example, in Fig. 16, it is also possible to construct a processing system in which all processes for the dye-sensitized solar cell (Fig. 17) are combined. In the above-described embodiment, the first stacking unit (208/200/204) on the transparent substrate 208 side is produced by the second processing station 1 in the above embodiment, and the second processing station 11 is used to fabricate the pair. The second laminate assembly (210/205/202) on the base of the base 210 is bonded to the first layer assembly (2〇8/2〇〇/2〇4) and the second laminate by the bonding unit 112. Component (21〇/2〇5/2〇2). Here, in the first processing station 1A, as in the above-described embodiment, the unprocessed base jG is formed with the transparent electrode 2〇〇 pattern from the loader 12 in the cycle of the production time Ts, and the front blanket transparent The transparent substrate 2〇8 of the conductive layer is placed. On the other hand, in the second processing station 110, the unprocessed substrate loader 114 is formed with a blanket conductive layer (for example, FT) before patterning of the base electrode 2〇5 in accordance with the period of time & The counter substrate 210 is placed. The loader 114 has the same configuration and function as the loader 12, and includes a loader transport mechanism 116. In the second place, the station 110 includes a transport line 118 extending straight from the loader 114 toward the bonding unit 112 in the longitudinal direction of the system (X direction), and the transport line 11δ is interposed between the left and right sides of the transport line 11δ. The type processing unit 丨34 to 142Β. Now, on the feed line 118, the rows are alternately arranged in a row (three in the example), the soap pieces are transported, the mechanisms U0, I22, m and the plural (three seats) shuttle transport sections 126, 128, 13〇 . more. Sheep, ', and Tian. The "single 5 single-chip transport mechanism 12" is disposed in the transport process 30 201232693 201232693. The substrate towel relay table 132 and the fifth shuttle field of the loader 114 are respectively disposed. The first area surface of the fifth monolithic transport mechanism 120 is developed on the left and right sides; the plurality of single-chip cleaning units m, and the cleaning substrate G is processed on the surface of the L-rubber or the electric circuit. The /^ element 136' is used to pattern the substrate Η processed layer into the substrate electrode 2〇5. The transport mechanism 122 is located on the transport line 118 than the fifth single-chip transport mechanism. The first H-piece 2, 5f_^P1261^6 shuttle transport unit 128 is sandwiched. After the board "the monument f to the sheet = unit 140" is used for the baking-coating, the substrate / ί transport mechanism 124 is located on the transport line 118 than the sixth single-piece transport mechanism, the seventh and sixth shuttle transport portions 128 The seventh shuttle transport unit 130 is provided with a counter electrode 2〇2 formed on the surface to be processed. u ) 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 具有 具有 具有 具有 具有 具有 具有 具有 具有The configuration of the 〇 mechanisms 3G, 32, and 34 is the same, and the same operation ί, the third 126, m, and BG have the same configuration as the private parts 38, 4G, and 42 of the first processing station 10 described above. _ The effect is effective. At the second refreshment station 110, the substrate η is descended on the transport line 118 and at the same time in the 5th to the 29th, and the processing unit sequentially receives the series of single > 5 processing or batch processing. In addition, according to the production distance (4), the cycle is counted from the f 7-new transport unit 13 () ===ΪΙ_4 to become the first = 31 201232693 piece processing or batch processing. Further, the upper portion and the lower discharge position (the rushing ship) of the fourth shuttle transport unit 43 of the fourth single-piece transporter 365 are connected by the transport mechanism 144 of the splicing unit 112. The processed substrate G of the laminated component (2〇8/2〇〇/2〇4). The bonding unit 112 uses the second stacking assembly (208/200/204) that is taken in from the second processing station 1 and the second stacked assembly (210) that is taken in from the second processing station 11 using, for example, an adhesive. /2G5/2G2) laminated, body-formed laminated assembly (2G8/2(8)/2G4/2()2/2G5/21〇). The integrated layer assembly (208/200/204/202/205/210) is sent to the next electrolyte injection unit 146, where the integrated laminate assembly is more compact. The porous semiconductor is micro, and an electrolyte solution is injected between the particle layer 2〇4 and the counter electrode 2〇2. In the next section of the package unit 148, the integrated laminated component is packaged (the dense pleural fluid does not leak A' to obtain the dye-sensitized solar battery cell of Fig. 17 of the final product. The dye-sensitized solar cell module The G/H self-unloading machine 14 is made of the cassette Cs, and is attached to the bonding unit 112, the electrolyte injection unit 146, and the fresh-keeping unit 148 by the single-piece transport mechanism and the shuttle transport unit in the present day and month. It is also possible to carry out the reciprocating motion of the upper transport shuttle by the shuttle-transporting unit in a single-handed transport of the substrate or the laminated component or a modified example. Move, unload, ϊ=)) and the reciprocating movement of the lower transport shuttle (shipping, moving, unloading, re-shifting, etc.), regardless of the individual transport mechanism (贞贵区) The batch-type processing unit is transported or transported on the transport line according to the transport type. Therefore, it is not limited to the system with the processing unit and the batch processing unit as described above, and the unit system in the system is ΞίίΪ The online system of the processing unit, or all within the system The present invention is applicable to both on-line and on-line processing systems in the form of a single-handle 70. It is not limited to,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The present invention can be applied to the whole process. The substrate processing method [simplified description of the drawing] The invention is carried out in a singular view. The implementation of the lining substrate processing device _ the upper layout can be displayed on the single-chip transport f3 of the substrate processing device A perspective view showing the configuration of the above-described single-piece transport mechanism. The body map Tuton's display of the shuttle transport unit of the above-mentioned substrate processing apparatus is the first ^^!_Sakisaki's single W processing unit H/i schematically shows the second type diagram of the MCU transport arm assembled in the above substrate processing device. ——^工私和··平平式处理单元形图In the case of the person's situation, the second type is shown in the processing unit. When the unit is programmed, the unit is displayed in the upper part of the board. The type of processing is _ _ _ _ _ _ The batch of interesting parts of the money is shown in Figure 9A (a ) (C) shows the stages of the above-mentioned single-input movements. _ Machine_ for each processing unit substrate Figure 9B(d)~2 shows the money segment diagram for the operation of the above figure. The processing unit substrate 1_~(8) is said to be from the upstream side 33. The movement of the substrate and the operation of transporting the substrate to the downstream side are shown in FIG. 10B (a) to (c). llA (a) to (c) show the operation of the above-described single-chip carrier substrate, and the downstream side upper shuttle port 11B (d) to (f) display the above-described single-chip operation = display the above-mentioned single in the first transfer mode - series transfer operation of the sheet transport mechanism = the second series transfer mode in the above-described one-piece transport mechanism - the serial transfer operation shows the third transfer form of the single-chip transport mechanism - serial transfer replacement = for the above batch The series is divided into single halving _ burning treatment and the substrate is continued. The whole process is shown in Figure 17. The vertical sectional view of the structure of the color-cutting and knocking electric wire is shown. [Description of main component symbols] '' Β ' A! ' Α 2, Β!, β2, β3..·Single chip processing unit

Dl、D2··.分批處理單元 ' FL...運出位置 G/H…色素增感太陽電池模組 G、Q、（¾、Gl〜G彻、Η…被處理基板 34 ⑧ 201232693 JSL、JSU、KSL、KSU、SU、SL...搬運梭 MU、ML...運送臂 tO〜t8…時點Dl, D2··. Batch processing unit 'FL...Output position G/H...Pigment sensitized solar cell module G, Q, (3⁄4, Gl~G, Η...processed substrate 34 8 201232693 JSL , JSU, KSL, KSU, SU, SL... transport shuttle MU, ML... transport arm tO~t8...

Ta...鍛燒時間Ta... calcination time

Tb...冷卻時間Tb...cooling time

Tn...分批處理時間 WU、WL...卸料位置 10、110...處理站 12、114...裝載機 14.. .卸載機 16、22...匣盒平台 18、116...裝載機運送機構 18a、24a...本體 18b、24b...運送臂 20、26、132...基板中繼台 20U、2,0L、26U、26L·.·載置台 24.. .卸載機運送機構 28、118...運送線 30、32、34、36、120、122、124…單片運送機構 38、40、42、126、128、130…穿梭運送部 44、134…單片式清洗單元(處理單元） 46、136…單片式圖案化單元(處理單元） 48.. .單片式作用極成膜單元(處理單元） 50、140…單片式熱處理單元(處理單元） 52A、52B、142A、142B...分批式鍛燒單元(處理單元) 54.. .單片式色素吸附單元(處理單元） 56.. .昇降驅動部 58.. .昇降驅動轴 60U、60L...運送本體 62、64...運送通道 35 201232693 66…托架 68.. .固持部 70、86、88、94...昇降銷 72、78..·處理室(腔室） 74.. .平台 75.. .基板出入口 76.. .頭部(清洗頭)(雷射出射頭)(印刷頭) 84.··頭部(清洗頭)(喷嘴頭） 80.. .旋轉驅動部 82.. .旋轉吸盤 90…板片 92.. .本體熱處理室 96.. .加熱爐 98.. .基板舟 100.. .保溫筒 102.. .舟支持臂 104.. .昇降機構 106.. .基板支持棒 112.. .貼合單元 138.. .單片式對極成膜單元 144.. .運送機構 146.. .電解液注入早元 148…封裝單元 200…透明電極(陰極） 202.. .對向電極(陽極） 204.. .半導體微粒子層 205.. .基底電極 206.. .電解質層 208.. .透明基板 210.. .對向基板 36 ⑧Tn... batch processing time WU, WL... discharge position 10, 110... processing station 12, 114... loader 14... unloader 16, 22... cassette platform 18, 116...loader transport mechanism 18a, 24a...body 18b,24b...transport arm 20,26,132...substrate relay station 20U, 2,0L, 26U, 26L···mount 24 . . . unloader transport mechanism 28, 118... transport lines 30, 32, 34, 36, 120, 122, 124... single-piece transport mechanisms 38, 40, 42, 126, 128, 130... shuttle transport 44 134...single-chip cleaning unit (processing unit) 46, 136...single-chip patterning unit (processing unit) 48.. monolithic working electrode forming unit (processing unit) 50, 140...single-chip heat treatment unit (Processing Unit) 52A, 52B, 142A, 142B... Batch Type Calcining Unit (Processing Unit) 54.. Monolithic Pigment Adsorption Unit (Processing Unit) 56.. Lifting and Driving Unit 58.. Drive shaft 60U, 60L... transport body 62, 64... transport path 35 201232693 66... bracket 68.. retaining portion 70, 86, 88, 94... lift pin 72, 78.. (chamber) 74.. Platform 75.. Substrate access 76.. Head (cleaning head) (Ray Injection head) (print head) 84.··Head (cleaning head) (nozzle head) 80.. Rotary drive unit 82.. Rotary suction cup 90... Plate 92.. Body heat treatment chamber 96.. Heating furnace 98.. . substrate boat 100.. Insulation cylinder 102.. boat support arm 104.. lifting mechanism 106.. substrate support rod 112... fitting unit 138.. . monolithic pole Film forming unit 144.. transport mechanism 146.. electrolyte injection early element 148... package unit 200... transparent electrode (cathode) 202.. counter electrode (anode) 204.. semiconductor fine particle layer 205.. Base electrode 206.. electrolyte layer 208.. transparent substrate 210.. opposite substrate 36 8

Claims (1)

201232693 七、申請專利範圍： 1.一種基板處理裝置，包含： 第1及第2運送通道，以任意長度沿水平方向相互平行延伸； 第1搬運梭’具有裝載1片基板之托架’可在設於該第1運送通 道一端之第1運出位置和設於該第1運送通道另一端之第丨卸料位 置之間’於該第1運送通道上往復移動； 第2搬運梭，具有裝載丨片基板之托架，可在設於該第2運送通 道一端之第2運出位置和設於該第2運送通道另一端之第2卸料位 置之間，於該第2運送通道上往復移動； 第1運送機構，以可對該第1及第2運出位置進行存取之方式設 置’具有用以於第1區域内運送基板之1個或複數第1運送臂； 第2運送機構，以可對該第丨及第2卸料位置進行存取之方式設 置’具有用以於第2區域内運送基板之1個或複數第2運送臂；及 處理部，為對基板施行所希望之單片處理或分批處理， 於該第1及第2區域至少其中一者； ^ 且該第1運送機構使用該第1運送臂於該第丨及第2運出位 一載置基板至該第1及第2搬運梭， 該第2運送機構使職第2運送臂於鄕丨及第2卸 第1及第2搬運梭逐一卸除基板， 了叶仪置自5亥 藉由該第1搬運梭自該第1運出位置朝該第，料位置 運送，與藉由該第2搬運梭自該第2運出位置朝 ^ 之運送，係獨立進行。 不可τ寸佴置丞板 2.如申請專利範圍第1項之基板處理裝置，其中於該 將收納有未處理基板之匣盒置入之裝栽機部，'。°域内汉有 該第1運送機構使用該第1運送臂將用來 運梭之基板自該Ε盒取出。 3. 如申請專圍第1或2項之基板處理裝置， 運送通道隔著一定間隔上下重疊。 及弟1及弟2 4. 一種基板處理裝置，包含： 運送線，自製造餘上游_下_沿水平方喊送被處理 201232693 基板； 部逐，綱運送線上，她置在其之第1處理 第2運送機構，設在該運送線上較該第丨運 與配置在其周圍之第2處理部逐片傳遞基ί祕構更下游侧， 龄之第1及⑽運梭，構成該運送線一區間，自鄰 第li第2卸3^位置’朝鄰接該第2運送機構之 ϋ板編_單_基板。 基板運送線，自製造絲上游_谓_水付向運送被處理 部逐；冓、在该運迗線上’與配置在其周圍之第丨處理 與配^構更下游侧， 5 ^ 之第1及第2卸料位置，分麻輪制心運送機構 送，係於-定產距時間交互進行細料2搬運梭基板之運 =置’其__第丨搬運 =運梭未載置編：卸 卸料:ί3搬”基板而自該第2運出位置朝該第2 位置朝該第境恤置移動^^運縣載錄獅自轉1卸料 梭卸除基板之動作，係於獨^時乍機進弟2運运機構自該第2搬運 38 ⑧ 201232693 ，第1運送機構載置基板於該第2搬 ， ί第:第4至6射任—項之基域歧置，ί中，该第 獨二動 任意長度平行延伸之第1及第2運送通道上分別 嫩^巾，職及第_ 10·=申明專利範圍第5或6項之基板處理裝置，其中， ==定_差分職複進行第3 4單片處理之複“1單片式處 於理n其中’該第1運送機構 39 1 包2;申_範圍第5或6項之基板處理裝置，其中，該部 2 片處ί數Γ早片式處理單元’以—定時間差分別重複進行第1單 單片;定時間差分別重複進行該第1 3 處理其中上游側接收尚未接受該第1及第2單片 片處理結束時點之抑% j 接收之基板送人最臨近該第1單 4 1單片處理結束之基f，^式1理單元’與此替代地，送出該第 5 理結束時點之該第^片::之基最臨近該第2單片處 片處理姓戾之其虹處早兀，與此替代地，送出該第2單 中;—：ί束之基板’將該送出之基板載置於該第1或第2搬運梭其 6 Κ如申睛專利範圍第5或6項之基板處理裝置，其中，糊處理部 201232693 ίίΓ定時間差分別重複進行第1分批處理之魏第丨分批式處 項之基板處理裝置，其中，該第1運送機構 之Γ片Α拓夺H運送線上游側接收尚未接受該第1分批處理 之該第^批基i送入最臨近該第1分批處理結束時點 之基ί，將^此替代地’送出該第1分批處理結束 16.如申請專利置於該第1或第2搬運梭其中任一者。 理^1_&财複進行第3單片處理之複數第/單 筮u 士门^目該第1或第2搬運梭其中任一者卸除尚去蛀為枯 理結早束時ΐ二以反’=5之基，八最臨近該第3單。 队如申請it基板至該運送線下游側。 包含··月翻觀圍第5或6項之基板處理裝置，其中，該第2處理部 片處ί數f單片式處理單元，以—定時間差分別重複進行第3單 單片定時間差分別重複進行該第3 苐3及第4單片處理1中任一者之 者卸除尚未接受該 ^近該第3單片處理結束時點之該第^/片之，送入最 地，迗出該第3單片處理社束之美 ，里早兀，與此替代 該第焊#理結束時‘該第t單^處^之基f送入最臨近 2〇.如申請專利範圍第5或6項之基板處理襄置，其中，該第2處理部 201232693 具有複數第2分批式處理單元，其中任一者皆以一定時間差重複進 行第2分批處理。 八、圖式： 41201232693 VII. Patent application scope: 1. A substrate processing apparatus comprising: first and second transport passages extending parallel to each other in a horizontal direction with an arbitrary length; the first transport shuttle 'having a bracket for loading one substrate' can be The first transport position provided at one end of the first transport path and the first transport position at the other end of the first transport path reciprocate on the first transport path; the second transport shuttle has a load The bracket of the cymbal substrate is reciprocable on the second transport path between a second transport position provided at one end of the second transport path and a second discharge position disposed at the other end of the second transport path Moving; the first transport mechanism is provided with one or a plurality of first transport arms for transporting the substrate in the first region so as to be accessible to the first and second transport locations; and the second transport mechanism Providing one or a plurality of second transport arms for transporting the substrate in the second region, and the processing portion, for accessing the second and second discharge positions, for the purpose of performing the substrate Monolithic processing or batch processing, in the first At least one of the second area; and the first transport mechanism uses the first transport arm to mount the substrate to the first and second transport shuttles at the second and second transport positions, the second transport mechanism The second transfer arm and the second unloading first and second transfer shuttles are respectively removed from the substrate, and the leaf device is placed from the fifth transporting position from the first transport position to the first. The material position transport is carried out independently from the second transport position by the second transport shuttle. 2. The substrate processing apparatus according to the first aspect of the invention, wherein the cassette storing the unprocessed substrate is placed in the loading unit. In the range of the first transport mechanism, the first transport mechanism uses the first transport arm to take out the substrate for transporting the cassette from the cassette. 3. If you apply for the substrate processing unit of item 1 or 2, the transport channels overlap each other at regular intervals. Brother 1 and Brother 2 4. A substrate processing apparatus comprising: a transport line, which is processed from the upstream of the manufacturing _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The second transport mechanism is disposed on the transport line on the downstream side of the first transport unit and the second processing unit disposed on the transport line, and the first and (10) transporters are arranged to form the transport line. The section is adjacent to the second transport mechanism of the second transport mechanism. The substrate transport line is from the upstream of the manufactured wire, and the water is transported to the processed portion, and on the transport line, and on the downstream side of the third processing and configuration disposed around it, 5^ of the first And the second unloading position, the hemp wheel centering mechanism is sent, and the fine material is transported in the fixed production time. 2 transporting the shuttle substrate: setting __ 丨 丨 = 运 运 运 运 运 运 运 运 运 = Discharge: ί3 moves the substrate and moves from the second transport position toward the second position toward the first floor. ^^ Yunxian County recorded the rotation of the lion 1 unloading shuttle to remove the substrate. From the second transport 38 8 201232693, the first transport mechanism mounts the substrate in the second transport, and the fourth to sixth shots are in the base domain, ί, The first and second transport passages of the second and second movable parallel lengths are respectively arranged on the first and second transport passages, and the substrate processing apparatus of the fifth or sixth paragraph of claim 10, wherein == _ difference Recovering the 34th single-chip processing, "1 single-chip type is in the middle", the first transport mechanism 39 1 package 2; _ _ range 5 or 6 substrate processing equipment Wherein, the first part of the part is ί Γ Γ Γ 处理 处理 ' ' ' ' Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第2 Suppression of the end point of the single-chip processing. j. The receiving substrate is closest to the first single. The base 1 of the single-chip processing is completed, and the base unit f is replaced by the second unit. The first piece: the base is closest to the second piece, and the last part of the piece is processed, and the second part is sent out, and instead, the second item is sent out; The substrate is placed on the substrate processing apparatus of the first or second transport shuttle, such as the fifth or sixth aspect of the patent application scope, wherein the paste processing unit 201232693 ίί determines the time difference to repeat the first batch processing The substrate processing apparatus of the first batch type, wherein the first transport mechanism of the first transport mechanism reaches the upstream side of the H transport line and receives the first batch of bases that have not received the first batch processing. At the end of the first batch processing, the base ί will be used instead of 'sending the first one. End of the batch 16. This patent is placed first or 2 wherein any one of the shuttle transport. ^1_&Full resumption of the third single-chip processing of the plural / single 筮u 门 ^ 该 该 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第Against the base of '=5, eight is closest to the third. The team applies for the it substrate to the downstream side of the transport line. The substrate processing apparatus according to the fifth or sixth aspect of the present invention, wherein the second processing unit is configured to repeat the third single-chip time difference by a predetermined time difference And performing the third/third single-chip processing 1 to remove the first/slice that has not yet received the processing at the end of the third single-chip processing, and send it to the most The third monolithic processing of the beauty of the community, the early morning, and the replacement of the first welding #理 at the end of the 't t single ^ ^ base f is sent to the nearest 2 〇. If the patent scope of the fifth or sixth In the substrate processing apparatus, the second processing unit 201232693 has a plurality of second batch processing units, and any one of them repeats the second batch processing with a certain time difference. Eight, schema: 41
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JP4378114B2 (en) * 2003-06-18 2009-12-02 東京エレクトロン株式会社 Processing system
JP5006122B2 (en) * 2007-06-29 2012-08-22 株式会社Ｓｏｋｕｄｏ Substrate processing equipment
JP4980978B2 (en) * 2008-04-17 2012-07-18 大日本スクリーン製造株式会社 Substrate processing equipment
JP5274339B2 (en) * 2009-03-30 2013-08-28 大日本スクリーン製造株式会社 Substrate processing apparatus and substrate transfer method

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CN103229289A (en) 2013-07-31

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