TW201221703A - Electrolytic copper plating bath and electrolytic copper plating method used for semiconductor - Google Patents

Electrolytic copper plating bath and electrolytic copper plating method used for semiconductor Download PDF

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Publication number
TW201221703A
TW201221703A TW099139782A TW99139782A TW201221703A TW 201221703 A TW201221703 A TW 201221703A TW 099139782 A TW099139782 A TW 099139782A TW 99139782 A TW99139782 A TW 99139782A TW 201221703 A TW201221703 A TW 201221703A
Authority
TW
Taiwan
Prior art keywords
copper plating
electrolytic copper
plating bath
semiconductor
bath
Prior art date
Application number
TW099139782A
Other languages
English (en)
Chinese (zh)
Inventor
Toshihiro Shibata
Original Assignee
Chiracol Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chiracol Co Ltd filed Critical Chiracol Co Ltd
Priority to TW099139782A priority Critical patent/TW201221703A/zh
Priority to JP2010277822A priority patent/JP2013028821A/ja
Priority to KR1020100134747A priority patent/KR20120053933A/ko
Publication of TW201221703A publication Critical patent/TW201221703A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
TW099139782A 2010-11-18 2010-11-18 Electrolytic copper plating bath and electrolytic copper plating method used for semiconductor TW201221703A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW099139782A TW201221703A (en) 2010-11-18 2010-11-18 Electrolytic copper plating bath and electrolytic copper plating method used for semiconductor
JP2010277822A JP2013028821A (ja) 2010-11-18 2010-12-14 半導体用電解銅メッキ浴及び電解銅メッキ方法
KR1020100134747A KR20120053933A (ko) 2010-11-18 2010-12-24 반도체용 전해 구리 도금욕 및 전해 구리 도금 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW099139782A TW201221703A (en) 2010-11-18 2010-11-18 Electrolytic copper plating bath and electrolytic copper plating method used for semiconductor

Publications (1)

Publication Number Publication Date
TW201221703A true TW201221703A (en) 2012-06-01

Family

ID=46269994

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099139782A TW201221703A (en) 2010-11-18 2010-11-18 Electrolytic copper plating bath and electrolytic copper plating method used for semiconductor

Country Status (3)

Country Link
JP (1) JP2013028821A (ko)
KR (1) KR20120053933A (ko)
TW (1) TW201221703A (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115142113B (zh) * 2022-08-08 2023-10-13 哈尔滨工业大学 一种用于镍基合金的电解抛光液添加剂、抛光液及抛光方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005048256A (ja) * 2003-07-30 2005-02-24 Asahi Denka Kogyo Kk 銅メッキ用添加剤、銅メッキ浴および銅メッキ方法
JP4750486B2 (ja) * 2005-07-06 2011-08-17 株式会社Ａｄｅｋａ 電解銅メッキ用添加剤、該添加剤を含有する電解銅メッキ浴及び該メッキ浴を使用する電解銅メッキ方法
JP4850595B2 (ja) * 2006-06-19 2012-01-11 株式会社Ａｄｅｋａ 電解銅メッキ浴及び電解銅メッキ方法
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via

Also Published As

Publication number Publication date
JP2013028821A (ja) 2013-02-07
KR20120053933A (ko) 2012-05-29

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