201218311 六、發明說明： 【發明所屬之技術領域】 认月關於種基板保持器，其係用以支持成膜對象 /寻膜狀基板；具備其之成騎置；及成膜方法。 【先前技術】 近年來已知一種賤錄裝置，係在酿室内使基板相對 =巴作相對移動’同時在基板上形成薄細如參照下述專 利文獻1)。此賤錄裳置係具備：固定於麵室的多數個乾； 2餘的表面與基板表面略呈平行聽置，㈣使基板在 濺鑛室内移動之移動機構。 [先前技術文獻] [專利文獻] 專利文獻1日本特開2009— 138230號公報 【發明内容】 [發明所欲解決之課題] —在上述專利文獻i所記載的構成中，在基板是由塑膠 _等所形成的情況下，在朗時基板會因熱而破損（燒 損)_二'法5適地成膜。於是考慮—種方法，係將基板設置 於冷部面上’-邊藉著該冷卻面將輸入至基板的熱量吸收 掉、一邊進行成膜。 然而，上述方法一般而言並不容易確保基板與冷卻面 的密著性。因此在成膜中’會因為熱量輸入至基板使得基 板/皿度上升’而對基板造成損害。尤其是因為基板的熱變 而使得與冷卻面的密著性降低，該密著性降低部分的 損害會變得更加顯著。另一方面，為了減少基板的輸入熱 置，而限制每個減鍍陰極的成臈量，則在欲形成厚膜的情 4/24 201218311 况下，必須具有多數個陰極。 有鑑於以上這些狀況，本發明之 板保持器，其係可防止薄在、M、一種基 現人、“士以畑 基因熱而破損，而能夠實 現口適的成膜處理；一種成膜裝置及成膜方法。 [用以解決課題之方法] 達ΐ上述目的’本發明其中-個形態所關連之灵 J呆持器，其係與成膜源相對向配置，並用以支持_: 基板保持器，其特徵為：具備保持器本體、與密著 持面上體係具有㈣體的部分周面所形成的支 持面，遠淘體係具有平行於軸心 1又 的圓周方向。上述伴持方向與上迷轴心周圍 支持面的狀態下與基板支持於上述 基板與姻㈣體’並維持上述 罝供Π本發明其巾—___之成職置，其係 一備成膜至、成膜源、與基板保持器。 上述成膜源係配置於上述成膜室。 保持器係具有保持器本體與密著機構。上述 二有由筒體的部分周面所形成之支持面，該 =係具好行於如_方向與上述如 t而在將_ 板支持於上述支持面驗態下 體，並_上縣城找讀持器本 此外:本發明其中—個··連之賴方法 包3:將缚膜狀基板配置在由筒體的部分周面所形成的支 5/24 201218311 =:::體係具有平行於-的軸方向與上述軸 述基侧㈣㈣，使前 行成Γ與上述支持面呈對向的成膜源，而在上述基板進 【實施方式】 與成實連之基板保持器’其係 器’=r備保持 上述保持器本體係具有由饩她 持面，該筒體係具有平行於細Ί的，刀周面所形成之支 的圓周方向。上述保持哭太1 由;：、的轴方向與上述軸心周圍 支持^基板支持於上述 基板與上保持器本體，並維持上述 支持面的機能。密著機構係具有使基 二丄上述支持面係由筒體的部分周 板不會產生«，而確實 的—i==:具;:= 6/24 201218311 可提高基板材料的自由度。 使基材岔著於支持面的方法並未受到特別限定，例如 除了利用夾鉗或永久磁石等之基材爽持構造以外，還可採 用利用黏著膠帶之接著等。 上述密著機構亦可含有可使上述基板產生沿著上述圓 周方向的張力之張力產生部。 藉此可提高基板與基板保持器的支持面之密著性。 構^述張力產生部亦可具有第> 及第2固定具'與彈性 圓周1及第2固定具，可分別固定上述基板在上述 向上的各端部。上轉賴件可對上述基板施 地張力。 力，=材:可對基㈣予所希望的張 上述張力產生部可具有第1及第2輕構件盘支持勤 上件可捲附於墙板在上述圓周方向 及第=蝴轴係以可旋轉的方式支持著上述第丨 張力：:以：轴旋轉而對基材賦予所希望的 亡述支持面亦可具有脫氣用的it氣路徑。 之二支持面 徑係由例如形成於支持面之孔、t t °上述通氣路 確保上述職轉，支持4 7成。另外’為了 上述張力產㈣ 7 / ΊΑ 201218311 曲之雙金屬（bimetai)。 藉此’因成膜時的輸入埶旦、止 密著性降低，會因為支持_基板的繞曲所導致的 士找^ ι又付甸的形變而抵銷。 成隄/ 〃中—個實施形態所關連之成膜穿置 成勝室、成膜源、與基板保持器。成膜袭置，係具備 上述成膜源係、配置於上述成膜室。 士述基板保持器，係具有保持 述保持器本體係具有由筒體的部 構。上 方向，而在將薄膜狀基板支持於 扣周 述成膜源呈對向配置。上述密著機構上 本體，並維持上述基板與上述支持面之密魏態心持器 “本發明其中—個實卿態所關連之成財 將溥膜狀基板配置於支持面之步驟，該 ^的 部分周面所形成，該筒體係具有平行於轴心_= 述軸心周圍的圓周方向。 〃 藉著使上述基板產生沿著前述圓周方向的張力， 述基板密著於前述支持面。 & 藉由與上述支持面呈對向的成膜源，而在上述基板 行成膜。 以下參照圖式’同時對本發明之實施形態作說明。 <第1實施形態> 圖1表示本發明其中一個實施形態所關連之成膜裝置 之概略平面圖。以下針對本實施形態之成膜裴置1〇〇之概 略構成作說明。 [成膜裝置] 8/24 201218311 成膜裝置100係具有裝料室n、成膜室12、與設置於 裝料室11與成膜室12之間之開閥13。成膜裝置】〇〇係谁 -步具有使裝料室11排氣之真空泵151、與使成膜室 氣之真空泵152。成膜裝置100係在由裝料室u被搬運至 成膜室12之基板S表面形成薄膜，在成膜後，經過裝料6 11而將基板s搬出至外部。 t 至 裝料室11會透過第！真空閥141而與第1A空栗151 連接。裝料室11在基板被搬入裝料室u之後，可藉由真 空泵151排氣至特定的麗力。 一 在本實施形態中’成膜室12係以賤鑛室的形式構成。 亦即成膜⑼除了陰極單元12()以外，還具有用以將製程 氣體導入成膜室12而未圖示的氣體導人管線等。陰極單元 120(成膜源)係具有第！革巴部121與第2革巴部122、分別配 置於革巴部12卜122而用以磁控管放電之磁性組件等。陰極 單元120係設置成面對成膜室12其中—個側壁。乾部a、 122可同時驅動或可互相獨立地驅動。乾部⑵、的 =電方式並未受到特觀定，可_ dc放電、AC放電、 RF放電等適當的方式。 ί =°卩122係具有111應於成膜材料的種類而設置的 :材:基板s的材料除了金屬及金屬化合物等無 積層膜以二舉有機材料’所形成的薄膜為單層膜、 122曰传:〇/、寺皆可。在形成單層膜的情況下，乾部121、 下，同㈣卿成’在形成制膜及複合膜的情況 革巴口P 121、122 传 士 丁 门土 形能φ ㈣不同種類的材料所形成。在本實施 乾:中’㈣121係具有__，糾122係具細Ai) 9/24 201218311 成膜裝置100進一步具有支持基板s的基板保 20、與在成膜室Π之中搬運基板S而未圖示的搬運機構5 上述拖L運機構可使基板保持器2〇，由裝料室I〗側往成 12的端部12a，沿著箭號A以等速度直線搬運。另外膜至 述搬運機構’還可使基板㈣H 2Q由成膜室12的’ ^ 側往裝料室11側’沿著箭號B以等速度直線搬運。^ a 施形態中，基板S在沿著箭號A之往程與沿著箭號b之反 程’分別以橫切的方式通過乾部12卜122的正面 = 通過的過程中’會在基板s上實施成膜處理。 … .上述搬運機構係含有例如導引基板保持器2〇 =、與沿著上述導執使基板保持器2()移動之驅動源等。 或者，上述搬運機構可採用在懸吊的狀 持器20，㈣進行搬運之形態。 ㈣者基板保 者斜衫上糊子舰制，可錄奴返程之任一 者對基板S貫施成膜處理。或者， 基板S停止的狀態下進狀二式= 例如，藉著在成膜室Γ例子所限制。 t ^ to, s ⑵可因應於成爾而㈣⑵、 態中用T；m繞性的薄膜狀基板。在本實施形 等塑膠薄膜做為基板酸乙二醋）、Pc(聚碳酸醋） 板s的形狀並未受到特別 與是否具有耐熱性無關。基 不限定為_單層薄膜，’典型的例子為矩形。基板S 他層。 、亦可在其表面形成金屬層等的其 10/24 201218311 f基板保持器j 持器2G料細朗。μ係基板保 圖4係基板保持器20之側视:基=;。之平面圖’ 背面圖。 固5係基板保持器20之 基板保持器2〇係JL有租姓。。丄 保持器本體21係由鋼:、： ：21與密著機構22。 異的金屬材料所構成。二等之熱傳導性優 形成，在其中—側的表 ^由略呈矩形的板所 支持™基板8的支持 筒)之部分外周面所形成，該筒由半徑R的筒體(圓 向延伸的轴心La_方向e ；^有平行於沿著ζ軸方 保持器本體21係以支持面周圍的圓周方向D。 面呈對向的方式設置於成_ 121、_表 著錯直方向。支持面2la係在^部’並使轴方向C朝 S，並具核驗基板s冷卻軸料續著基板 支持面21a係具有凸出ΓςΓ機能。 圓筒形狀，而其料半徑之部分 〜！〇_麵。在半徑R小於^到特別限定，例如_麵 _細，則_縣__面21a+；； ^右著^過 保持器本體2!係具有錢 者性。 係貫通支持面21a以及魚支持面§亥貝通孔23 間。貫通孔23會形成通氣轉，而的背面训之 板s所放㈣《料至簡器本體= 並不受™所示般，在支持面 11 /24201218311 VI. Description of the Invention: [Technical Field of the Invention] The moon-related substrate holder is used to support a film formation object/film-seeking substrate; it is provided with a riding device; and a film forming method. [Prior Art] In recent years, a recording apparatus has been known which relatively moves a substrate relative to a bar during a brewing chamber while forming a thin film on the substrate as described in the following Patent Document 1). The shovel is provided with: a plurality of stems fixed to the chamber; more than 2 surfaces are slightly parallel to the surface of the substrate, and (4) a moving mechanism for moving the substrate in the splash chamber. [PRIOR ART DOCUMENT] [Patent Document 1] JP-A-2009-138230 SUMMARY OF INVENTION [Problems to be Solved by the Invention] - In the configuration described in Patent Document i, the substrate is made of plastic_ In the case where the film is formed, the substrate is damaged by heat (burning) in the case of aging, and the film is formed in a suitable manner. Then, in consideration of the above method, the substrate is placed on the cold surface ”, and the heat input to the substrate is absorbed by the cooling surface to form a film. However, the above method generally does not easily ensure the adhesion of the substrate to the cooling surface. Therefore, in the film formation, the substrate may be damaged by the heat input to the substrate. In particular, the adhesion to the cooling surface is lowered by the thermal change of the substrate, and the damage of the reduced adhesion portion becomes more remarkable. On the other hand, in order to reduce the input heat of the substrate and limit the amount of tantalum per cathode, it is necessary to have a plurality of cathodes in the case of forming a thick film. In view of the above circumstances, the plate holder of the present invention can prevent thin film, M, a base, and the heat of the gene to break, and can realize a film forming process; a film forming device And a film forming method. [Method for Solving the Problem] The above object is the object of the present invention, which is associated with a film forming source and is used to support _: substrate retention. The utility model is characterized in that the holder body has a support surface formed by a partial peripheral surface of the system having a (four) body on the adhesion holding surface, and the far-eon system has a circumferential direction parallel to the axial center 1. The above-mentioned accompanying direction is In the state of supporting the surface around the axis, the substrate is supported by the substrate and the substrate, and the above-mentioned substrate is maintained, and the film is supplied to the film source. The substrate is placed in the film forming chamber. The holder has a holder body and a sealing mechanism. The second surface has a support surface formed by a partial peripheral surface of the cylindrical body. Good in the direction of _ and above as in t _ The board supports the above-mentioned support surface test state lower body, and _ the upper county town finds the reader. In addition, the present invention is one of the methods of the package 3: the binding film substrate is arranged on a part of the circumference of the cylinder The formed branch 5/24 201218311 =::: system has an axial direction parallel to - and the above-mentioned axial side (4) (4), so that the forward formation is opposite to the above-mentioned support surface, and the substrate is formed on the substrate [Embodiment] A substrate holder that is connected to a solid body is provided with a retainer. The present system has a surface that is held by a side of the cylinder. The cylinder system has a branch formed by a peripheral surface of the knife parallel to the fine flaw. The circumferential direction is maintained by the above-mentioned axis direction and the support of the above-mentioned axis support substrate on the substrate and the upper holder body, and maintaining the function of the above-mentioned support surface.丄The above support surface is not produced by the partial plate of the cylinder, but the exact -i==: has;:=6/24 201218311 can increase the degree of freedom of the substrate material. The substrate is placed on the support surface. The method is not particularly limited, for example, except using a clamp or permanent magnet In addition to the substrate holding structure, an adhesive tape or the like may be used. The adhesion mechanism may include a tension generating portion that causes the substrate to have a tension along the circumferential direction. Thereby, the substrate and the substrate can be improved. The tension generating portion may have a second and second fixing means and an elastic circumference 1 and a second fixing member, and the respective substrates may be fixed at the respective end portions of the upward direction. The upper transfer member can apply tension to the substrate. Force, = material: the desired tension can be applied to the base (4). The tension generating portion can have the first and second light member discs, and the upper member can be attached to the wall. The plate rotatably supports the first weir tension in the circumferential direction and the first butterfly shaft: the shaft is rotated to impart a desired dead support surface to the substrate, and the gas path for deaeration may be provided. . The second support surface is made up of, for example, a hole formed in the support surface, t t ° the above-mentioned air passage to secure the above-mentioned service, and supports 70%. In addition, for the above tension production (four) 7 / ΊΑ 201218311 Qu Bitai (bimetai). Therefore, the input of the film is reduced, and the sealing property is lowered, which is offset by the deformation of the support _substrate and the deformation of the substrate. The formation of the dyke/ 〃中—the film formation through which the embodiment is connected is a winning chamber, a film forming source, and a substrate holder. The film formation is carried out by providing the film formation source system and disposed in the film formation chamber. The substrate holder has a structure in which the holder has a cylindrical body. In the upward direction, the film-form substrate is supported by the film-forming substrate in the opposite direction. The adhesion mechanism is disposed on the support body, and the step of disposing the substrate and the supporting surface of the support surface of the support surface of the present invention is the step of disposing the film-form substrate on the support surface. Formed by a partial peripheral surface, the cylinder system has a circumferential direction parallel to the axis _= about the axis. 借 By causing the substrate to generate tension along the circumferential direction, the substrate is adhered to the support surface. The substrate is formed on the substrate by a film formation source opposed to the support surface. Hereinafter, an embodiment of the present invention will be described with reference to the drawings. <First Embodiment> Fig. 1 shows the present invention. A schematic plan view of a film forming apparatus associated with an embodiment. Hereinafter, a schematic configuration of a film forming apparatus 1 of the present embodiment will be described. [Film forming apparatus] 8/24 201218311 Film forming apparatus 100 has a charging chamber n, the film forming chamber 12, and the valve opening 13 provided between the charging chamber 11 and the film forming chamber 12. The film forming apparatus is a vacuum pump 151 having a step of exhausting the charging chamber 11 and A vacuum pump 152 for forming a chamber gas. The membrane device 100 forms a thin film on the surface of the substrate S transported to the film forming chamber 12 by the charging chamber u, and after the film formation, the substrate s is carried out to the outside through the charging 61. t to the charging chamber 11 The vacuum valve 141 is connected to the first A hollow pump 151. After the substrate is carried into the charging chamber u, the charging chamber 11 can be exhausted to a specific Lili by the vacuum pump 151. In the present embodiment, the film is formed. The chamber 12 is formed in the form of a tantalum ore chamber. That is, the film forming unit (9) has a gas guiding line or the like for introducing a process gas into the film forming chamber 12, not shown, in addition to the cathode unit 12 (). (Film-forming source) is a magnetic component or the like which is provided with a second leather portion 121 and a second leather portion 122, which are respectively disposed on the leather portion 12 and 122 for magnetron discharge. The cathode unit 120 is disposed to face The film forming chamber 12 has one side wall. The dry parts a, 122 can be driven at the same time or can be driven independently of each other. The electric part of the dry part (2) is not specifically determined, and can be _dc discharge, AC discharge, RF discharge, etc. The appropriate method. ί = ° 卩 122 series has 111 should be set in the type of film forming material: material: material of the substrate s A film formed of a two-layer organic film such as a metal or a metal compound is a single-layer film, and 122 can be used as a single layer film. In the case of forming a single layer film, the stem portion 121, the lower portion, With (4) Qing Cheng' in the formation of film and composite film, Ge Bakou P 121, 122 Duke Dingmen soil shape energy φ (four) different types of materials formed. In this implementation: in the '(4) 121 series has __, The correction device 122 has a thin Ai) 9/24 201218311 The film forming apparatus 100 further includes a substrate holder 20 for supporting the substrate s and a transport mechanism 5 for transporting the substrate S in the film formation chamber 而 (not shown). The substrate holder 2 is transported linearly at an equal speed along the arrow A from the loading chamber I side to the end portion 12a of the 12 side. Further, the film-to-transport mechanism ' can also carry the substrate (four) H 2Q linearly from the '^ side of the film forming chamber 12 toward the charging chamber 11 side along the arrow B at a constant speed. ^ a form, the substrate S in the process along the arrow A and the return along the arrow b 'respectively cross-cut through the front of the stem 12 122 122 = pass in the process 'will be on the substrate Film formation treatment was carried out on s. The transport mechanism includes, for example, a guide substrate holder 2〇, a drive source for moving the substrate holder 2() along the guide, and the like. Alternatively, the transport mechanism may be in the form of being transported by the suspended gripper 20 and (4). (4) The substrate holder protects the slanted shirt on the smear ship, and any one of the returning slaves can apply the film processing to the substrate S. Alternatively, the state in which the substrate S is stopped is determined by, for example, the example in the film forming chamber. t ^ to, s (2) can be used in accordance with (4) (2), T; m winding film-like substrate. In the present embodiment, the plastic film is used as the substrate of the acid vinegar, and the shape of the Pc (polycarbonate) plate s is not particularly affected by whether or not it has heat resistance. The base is not limited to a single-layer film, and a typical example is a rectangle. Substrate S is the other layer. It is also possible to form a metal layer or the like on its surface. The 10/24 201218311 f substrate holder j 2G is fine. The μ-based substrate is protected. Figure 4 is a side view of the substrate holder 20: base =; The floor plan' rear view. The substrate holder 2 of the solid 5 series substrate holder 20 has a rent name. .保持 The holder body 21 is made of steel:::21 and the adhesion mechanism 22. Made up of different metal materials. The second-class thermal conductivity is excellently formed, in which the side surface is formed by a part of the outer peripheral surface of the support cylinder of the TM substrate 8 supported by the slightly rectangular plate, and the cylinder is formed by the cylinder of the radius R (circularly extending) The axis La_ direction e; is parallel to the circumferential direction D around the support surface of the support body 21 along the y-axis. The face is placed in the opposite direction to the _121, _ is in the wrong direction. The surface 2a is in the ^ portion and the axis direction C is toward S, and the substrate s cooling element is continued. The substrate supporting surface 21a has a convex enthalpy function. The cylindrical shape, and the radius of the material is ~ 〇 _ In the radius R is less than ^ to a special limit, for example, _ face _ thin, then _ county __ face 21a +;; ^ right ^ over the holder body 2! is rich in money. Through the support surface 21a and fish support §Haibeitong hole 23. The through hole 23 will form a ventilating turn, and the back training plate s will be placed (4) "Material to the body of the device = not as shown in TM, on the support surface 11 / 24
Sul 201218311 ::=, =23:形成數目亦並未受_ 設定。貫^通孔23的孔徑等而適當地 貝、孔23的孔徑並未受到特別限定， mm。甚至，貫通孔23的形狀不限於圓筒狀，可:’ 口 或可為將圓筒與圓錐加以組合的形狀。 ···、__、 =成上述通氣路徑，是為了解決由基板s放 引起基板S與支持面21a之間的密 =不受上述由貫通孔23形成的例子所限二= 如f續面…上形成條狀或網狀的多數個溝所形^1 至糟者由乡孔性材觸錢持面叫或轉 夠排除上述放出氣體造成的影響。此情況下。:多：:材:： 可採用金屬微粉末的燒結體或壓粉體等。 ，著機構22係用以維持基板8與支持面2 態，並且設置於保持器本體21的背面抓在=大 密==具有對支持面21a上的基材 周方向D的張力之機能。 如圖4及圖5所示般，密著機構22 ;=第/固定具)、與安裝在各個固定== 板S把加上述張力之多數根的彈簧構 f定具221係具有可㈣基板S端部的夾 =，的爽持構造，或可為利用永久磁二 各固定具221的長度’足以失持住基材§的 W的王幅。另一方面’各個彈簧構件223分別設置於各 =定在簡ϋ本體2丨背祕的底板222與㈣定 之間。 由固定具221'彈簧構件223等可構成張力產生部，其 12/24 201218311 係使支持面2】a上的基板S產生沿著圓周方向D的張力。 該張力的大小可藉由彈簧構件223的彈性係數 等而適當地調整。 另外在本實施形態_，係具有使各底板222相對於保 持器本體的背面21b朝著χ軸方向作相對移動之調整單 元。藉此，可調整彈簣構件223的彈力，而能夠職柄s 賦予所希望的張力。 單元係具有導弓,各底板222的移動之導執挪、 M 各底板222移動之調整螺絲224、與將導執 上的各底板222固定於保持器本體21任意位置 229。调整螺絲224被支持於固定在保 =力請上，而使調整_ 224 @__ = = 上移動。固定部229係形成於底板二 ㈣'IS各 =向/軸， 螺合之螺絲;^Γ所可與保持器本體21的背面训 [成膜裝置之運作例] 板二方式所構成的本實施形態之基 \力乂联裒置100的作用 明。 7用對其中一個例子作說 欲進板保持器20的支持面叫上，並使 心丁攻膝的面朝向外側域 方向D上的兩端部分別 ，8在支持面2la的圓周 22卜而被簡趣持H本！S2= W機構22之固定具 支持面叫係由部分圓筒狀的周面所形成，該圓筒係 13/24 201218311 具有平行於軸心乙㈣轴方向c與 D，因此基板S不會產生皺摺， a ;圍二圓周方向 藉此可防止_時輸人熱量所=者於支持面2la。 成為合適的成膜處理。 土的熱損害，而能夠 基板s受到彈簧構件223的 向D的張力，會順著支持面叫的予沿著圓周方 支持面…。另外，各固定具221的長/而密著於 S的端部的全幅，因此不會使基板^ 主基板 所希望的張力。 座生皺祛，而能夠賦予 倉匕约藉著對基板S賦予沿著圓周方向D的茫力 基板S與讀面⑴的密著性。 :張力’Sul 201218311 ::=, =23: The number of formations is also not subject to _ setting. The diameter of the through hole 23 and the like are appropriately selected, and the diameter of the hole 23 is not particularly limited, mm. Further, the shape of the through hole 23 is not limited to a cylindrical shape, and may be a shape of a combination of a cylinder and a cone. ···, __, = is the above-mentioned ventilation path in order to solve the problem that the density between the substrate S and the support surface 21a caused by the substrate s is not limited by the above-described example formed by the through hole 23 = Most of the grooves formed in the form of strips or nets are shaped as ^1 to the worst. The person who touches the money from the township hole is called or turned to remove the influence caused by the above-mentioned gas evolution. In this case. :Multi::Material:: A sintered body or a powder compact of a metal micropowder can be used. The mechanism 22 is for maintaining the substrate 8 and the support surface 2 state, and is provided on the back surface of the holder body 21 to grasp the function of the tension of the base material direction D on the support surface 21a. As shown in FIG. 4 and FIG. 5, the adhesion mechanism 22; = the second fixture; and the spring structure f 221 attached to each of the fixed == plates S to which the tension is applied is provided with a (four) substrate. The S-end portion of the clamp =, the cool-holding structure, or may be the length of the permanent magnet 2 fixtures 221 'sufficient to hold the substrate § W. On the other hand, the respective spring members 223 are respectively disposed between the bottom plates 222 and (4) which are defined by the simple body 2. The tension generating portion can be constituted by the fixing member 221' spring member 223 or the like, and the 12/24 201218311 causes the substrate S on the supporting surface 2]a to generate tension in the circumferential direction D. The magnitude of the tension can be appropriately adjusted by the spring constant of the spring member 223 or the like. Further, in the present embodiment, there is provided an adjustment unit for relatively moving the bottom plate 222 with respect to the back surface 21b of the holder main body in the z-axis direction. Thereby, the elastic force of the magazine member 223 can be adjusted, and the desired tension can be imparted to the job s. The unit has a guide bow, an adjustment guide for the movement of each of the bottom plates 222, an adjustment screw 224 for moving the respective bottom plates 222, and fixing the bottom plates 222 of the guides to any position 229 of the holder body 21. The adjustment screw 224 is supported to be fixed on the force, and the adjustment _ 224 @__ = = is moved up. The fixing portion 229 is formed on the bottom plate (four) 'IS each = direction/shaft, and the screw is screwed; the second embodiment of the holder body 21 can be controlled by the back surface of the holder body 21 [operation example of the film forming apparatus] The basis of the form is the role of the unit 100. 7, with one of the examples, the support surface of the plate holder 20 is called, and the sides of the knee-scraping surface are oriented toward the outer side direction D, respectively, 8 on the circumference 22 of the support surface 2la. It’s been held by Hime! The fixing surface of the S2=W mechanism 22 is formed by a partial cylindrical peripheral surface, and the cylindrical system 13/24 201218311 has a direction c and D parallel to the axis B (four) axis, so the substrate S is not generated. Wrinkles, a; around the circumference of the circle to prevent _ when the input of heat = = on the support surface 2la. Become a suitable film forming process. The heat of the soil is damaged, and the substrate s is subjected to the tension of the spring member 223 toward the D, which is called along the support surface along the circumferential support surface. Further, since the length of each of the fixtures 221 is close to the full width of the end portion of the S, the desired tension of the substrate is not caused. The seat is creased, and the adhesion of the substrate S to the reading surface (1) can be imparted to the substrate S by the force applied in the circumferential direction D. :tension'
因為成膜時的輸入熱量而發生了延伸 卩使基板S 能夠^基板S對於支持面2]a的安定㈣狀=張力，也 另外^基板S設置在基板保持心的^ 貝進仃，或可使用機械人等自動進行。 U由作業 如上述般，設置於基板保持器2〇的美 室=過„13而_運至維持在特定的成膜壓 在成膜室12之中，透過未圖示的搬 持器如朝著舰A 基f 會在使支持面21a的軸方向c朝著 二=益 被運往_方向c正㈣方向(x轴方向）方=狀 =室12之中以與陰極單元12〇相對向的位置的“ 式被基板保持器2〇搬運。 、 陰極單元120可絲部121、122的構成材料滅鍍成膜 14/24 201218311 於被支持於基板保持器20的基板s表面上Because the input heat at the time of film formation is extended, the substrate S can be stabilized (four) shape of the support surface 2]a = tension, and the substrate S is disposed on the substrate holding core, or It is automatically performed using a robot or the like. U is operated as described above, and the beauty chamber provided in the substrate holder 2 is over 13 and transported to a film formation chamber 12 maintained at a specific film formation pressure, and is passed through a holder (not shown). The ship A base f will be in the axial direction c of the support surface 21a toward the _ direction c positive (four) direction (x-axis direction) square = shape = chamber 12 to face the cathode unit 12 的The position of the position is carried by the substrate holder 2〇. The cathode unit 120 can form a film of the wires 121 and 122 to form a film. 14/24 201218311 is supported on the surface of the substrate s of the substrate holder 20.
在往程（圖1之箭號A)的搬運中，會依序 土反S ::22二正面’而在基板s形成M。膜與膜的二靶 r輸人至基板S的熱量’會透過與基板s密著In the transportation of the forward stroke (arrow No. A of Fig. 1), M is formed on the substrate s in the order of S::22 front side. The two targets of the film and the film, the heat input to the substrate S, will pass through the substrate s
而被保持器本體21吸收。亦即，支_2laW ίί =的冷卻面之機能，能夠抑制在成_基板S發^ 的,、、、知σ，而確保合適的成膜處理。 另外在成膜時，會因為輸人至基板s的熱量，而發生 由土板S放出氣體的情況。在本實施形態中，在 職有多數個貫通孔23，因此㈣等貫通孔做為通氣路 瓜’而導引至支持面21a的外部。藉此，因為可防止放出 基板s與支持面21a之間，所以能夠抑制基 板s與支持面21a之間的密著性降低。 、基板簡H 20若到達成财12的端部仏，則會被搬 運至裝料f 11側。基板S在返糊丨的箭號B)的搬運中， 會依序通魏部122及㈣121的正面，而在基板s進一 步形成A1膜與Mo膜。成膜後，基板保持器2〇會經過間間 13而返，裝料室n。然後閘閥13會關閉，在裝料室u開 放至大氣之後，可將紐著賴完畢的基板s之基板保持 器20由裝料室u取出至外部。 如以上所述般，依據本實施形態，可確保基板s與支 持面21a的良好密著狀態，因此可防止成膜時熱量輸入造 成基板S的熱損害，而能夠進行合適的成膜處理。另外， 不而多數個濺鍍陰極即可在基板s上形成較厚的金屬膜。 甚至由於並未要求基板具有耐熱性，因此可提高基板材料 的自由度。 15/24 201218311 [實驗例] 本發明人等，使用圖1所示的成臈裝置100,在基板上 形成Μ。- A1積層膜，對於所製作出的薄膜試樣測定^面電 阻與其均勻性。基板採用厚度50㈣的航薄膜。基板的 形狀定為300mmx300mm的正方形。形成基板保持器土2〇的 支持面21a之圓筒面的曲率半徑定為2285mm。成膜室 的壓力（成膜壓力）定為〇.4Pa、基板保持器的搬運速度 〇.67m/min. ° 另外’將構成陰極單元120之第i革巴部121的姆料 定為MoNb合金，第2乾部122的乾材料定為A1Nd合金。 第1乾部121的功率密度定為，第2乾部12?的 功率密度定為8.8WW。實驗之巾，在妹及返程使用兩 個乾部121、122錢行賴。薄賴樣的各層的厚度為It is absorbed by the holder body 21. In other words, the function of the cooling surface of the support layer _2laW ίί = can suppress the occurrence of σ in the substrate S, and ensure proper film formation. Further, at the time of film formation, gas may be released from the soil plate S due to heat input to the substrate s. In the present embodiment, since there are a plurality of through holes 23 in the working position, the through holes such as (4) are guided to the outside of the support surface 21a as the air passages. Thereby, since the gap between the substrate s and the support surface 21a can be prevented from being released, it is possible to suppress a decrease in the adhesion between the substrate s and the support surface 21a. If the substrate H 20 reaches the end of the fiscal 12, it will be transported to the loading f 11 side. In the conveyance of the returning arrow B), the substrate S sequentially passes through the front faces of the Wei portion 122 and the (IV) 121, and the A1 film and the Mo film are further formed on the substrate s. After the film formation, the substrate holder 2 turns back through the space 13, and the loading chamber n. Then, the gate valve 13 is closed, and after the charging chamber u is opened to the atmosphere, the substrate holder 20 of the substrate s to which the substrate is attached can be taken out from the charging chamber u to the outside. As described above, according to the present embodiment, it is possible to ensure a good adhesion state between the substrate s and the support surface 21a. Therefore, heat generation during film formation can be prevented from causing thermal damage to the substrate S, and an appropriate film formation process can be performed. In addition, a large number of sputter cathodes can form a thicker metal film on the substrate s. Even since the substrate is not required to have heat resistance, the degree of freedom of the substrate material can be improved. 15/24 201218311 [Experimental Example] The inventors of the present invention formed a crucible on a substrate by using the crucible device 100 shown in Fig. 1 . - A1 laminated film, and the surface resistance and uniformity of the prepared film sample were measured. The substrate is made of a film of thickness 50 (four). The shape of the substrate was set to a square of 300 mm x 300 mm. The radius of curvature of the cylindrical surface of the support surface 21a forming the substrate holder soil was set to 2285 mm. The pressure (film formation pressure) of the film forming chamber was set to 〇4 Pa, and the conveying speed of the substrate holder was 6767 m/min. °. Further, the material constituting the i-th portion of the cathode unit 120 was designated as a MoNb alloy. The dry material of the second stem portion 122 is defined as an A1Nd alloy. The power density of the first stem portion 121 is such that the power density of the second stem portion 12 is set to 8.8 WW. The experimental towel used two cadres 121 and 122 in the sister and return journey. The thickness of each layer of the thin sample is
MoNb(33〇A)/AlNd(340〇A)/MoNb(34〇A) 〇 將實驗結果揭示於表i。將採用支持面平坦的基板保持 器做為比較例時所得到的結果一併揭示。依據本實驗例， 可得到表面餘為_/□之薄膜試樣。表面電阻的面内 分布為7.9%。藉此，可確認在基板已適當地使金屬膜成膜。 相對於此，在比較例中，因為基板與支持面的密著不 基板發生破損(燒損）而無法成膜。 16/24 201218311 [表i]MoNb(33〇A)/AlNd(340〇A)/MoNb(34〇A) 〇 The experimental results are disclosed in Table i. The results obtained when the substrate holder having a flat support surface was used as a comparative example were revealed together. According to this experimental example, a film sample having a surface of _/□ can be obtained. The in-plane distribution of surface resistance was 7.9%. Thereby, it was confirmed that the metal film was appropriately formed on the substrate. On the other hand, in the comparative example, since the substrate and the support surface were not adhered to each other, the substrate was not damaged (burned), and film formation was impossible. 16/24 201218311 [Table i]
實驗例 比較例 成膜壓力(]Pa) 0.4 0.4 搬運速度(m/min) 0.67 0.67 功率密度 (W/cm2) MoNb 1.5 1.5 AINd 8.8 8.8 膜厚 (人） MoNb 330 X— AINd 3400 X MoNb 340 X Rs(Q/D) 0.22 X RS 均勻性(Uniformi.ty)(%) 7.9% X <第2實施形態> 圖6係本發明之其他實施形態所關連之基板保持器之 概略側視圖。另外在圖中，關於與上述第i實施形竑： 應的部分，採用相同的符號並省略其詳細說明。〜、 本實施形態之基板保持器30係具有保持器本體Μ、盘 密著機構32。本實施形態之密著機構32係具有 祕 =、與以可繞著細轉的方式支料 ^ 該基板s係配置在保持器本體21的=^^^ ^寺軸322被安裝在固定於保持器本體21、、二 323。另外雖然並去圖+ 月面之口座 件功旋轉之制動器:、’持轴322安裳有可阻止輥構 另外，域件321周邊的基材S與支持面2la的密著 17/24 201218311 f降低或元全沒有密著，所时有因域膜時的輸入熱量 ^到熱損害的顧慮。於是在本實施形態中，在台座323 ί受;構件33以保護位於輥構件叫 ，本實施形態之中，藉由使各輕構件功之中至少一 此：至，丨：!=材s賦予沿著圓周方向的特定張力。藉 、到與上述第1實施形態同樣的作用效果。 宜限：上=本發明之實施形態作說明’惟本發明並不受 疋’可基於本發明之技術思想作各種變形。 設置彈簧構件22二^^=單在=S的兩個端部 側設置彈菁構在基板s的至少其中-個端部 亦相同。 為整早几。關於上述第2實施形態 保持3體中，部分圓筒面形成 非球面、雙曲面等的其他曲面狀、而並不％其限制’亦可為 予特= 用以保持器本體的支藉著將這種材料適 :=適丄力=¾ 受增子所二 18/24 201218311 材，持構糾外，射採關㈣著膠帶 概略表示在簡n讀21_ 於圖7 使基板S㈣於讀面21a之基;；久:】、仏而 ^ 進行固定。 稭由水久磁石41、42 此外在以上的實施形態中，係以賤 成膜室的成料室與 成之批次絲i。財，核_;^了 構 t制錢射料料轉職之職轉\脫^ 【圖式簡單說明】 圖1係本發明其中一個實施形態所關連之成 概略平面圖。 、 圖2係本發明其中一個實施形態所關連之基板保持器 之全體斜視圖。 ° 圖3係上述基板保持器之平面圖。 圖4係上述基板保持器之側視圖。 圖5係上述基板保持器之背面圖。 圖6係本發明之其他實施形態所關連之基板保持器之 概略側視圖。 圖7係表示本發明其中一個實施形態所關連之基板保 持器之變形例之概略側視圖。 19/24 201218311 【主要元件符號說明】 11 裝料室 12 成膜室 12a 端部 13 閘閥 20、30、40 基板保持 21 保持器本體 21a 支持面(冷卻面) 21b 背面 22、32 密著機構 23 貫通孔 32 密著機構 33 絕熱構件 41 ' 42 永久磁石 100 成膜裝置 120 陰極單元 121 第1靶部 122 第2靶部 141 第1真空閥 142 第2真空閥 151 第1真空泵 152 第2真空泵 221 固定具 222 底板 223 彈簧構件 224 調整螺絲 20/24 201218311 225 托架 226 導軌 227 長孔 228 螺絲構件 229 固定部 321 輥構件 322 支持轴 323 台座 S 基板 P 曲率半徑 R 半徑 La 轴心 C 轴方向 D 圓周方向 21/24Experimental Example Comparative Film Formation Pressure (]Pa) 0.4 0.4 Handling Speed (m/min) 0.67 0.67 Power Density (W/cm2) MoNb 1.5 1.5 AINd 8.8 8.8 Film Thickness (Human) MoNb 330 X— AINd 3400 X MoNb 340 X Rs (Q/D) 0.22 X RS uniformity (Uniformi.ty) (%) 7.9% X <Second Embodiment> Fig. 6 is a schematic side view of a substrate holder associated with another embodiment of the present invention. In the drawings, the same reference numerals are given to the parts of the above-described first embodiment, and the detailed description thereof will be omitted. The substrate holder 30 of the present embodiment has a holder body Μ and a disk adhesion mechanism 32. The adhesion mechanism 32 of the present embodiment has a secret = and is mounted so as to be able to be wound around the substrate. The substrate s is disposed on the holder body 21 and is mounted on the holder shaft 322. The body 21, two 323. In addition, although the brakes of the seat and the seat of the moon are rotated, the 'holding shaft 322 can prevent the roller structure. In addition, the substrate S around the domain member 321 and the supporting surface 2la are tight. 17/24 201218311 f There is no closeness in the reduction or the total amount of the element, and there is a concern that the input heat of the domain film is reduced to heat damage. Therefore, in the present embodiment, the pedestal 323 is received; the member 33 is protected by the roller member, and in the present embodiment, at least one of the light member functions is obtained: 丨:! A specific tension along the circumferential direction. The same effects as those of the first embodiment described above are obtained. The present invention is not limited to the embodiment of the present invention. The present invention is not limited thereto, and various modifications can be made based on the technical idea of the present invention. The arrangement of the spring members 22 is performed on both end sides of the =S, and at least one of the ends of the substrate s is also the same. For a few early days. In the second embodiment, the partial cylindrical surface is formed into another curved surface such as an aspherical surface or a hyperboloid, and the limitation is not limited thereto. This material is suitable for: = Appropriate force = 3⁄4 by the addition of the second 18/24 201218311 material, holding the structure, the shooting and closing (four) with the tape outline in the simple n read 21_ in Figure 7 to make the substrate S (four) on the reading surface 21a Base;; long:], 仏 and ^ to fix. The straw is composed of the long-lasting magnets 41, 42. In addition, in the above embodiment, the forming chamber of the film forming chamber and the batch of wires i are formed.财 财 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; Figure 2 is a perspective view of the entire substrate holder associated with one embodiment of the present invention. Figure 3 is a plan view of the above substrate holder. Figure 4 is a side view of the above substrate holder. Fig. 5 is a rear view of the above substrate holder. Fig. 6 is a schematic side view of a substrate holder associated with another embodiment of the present invention. Fig. 7 is a schematic side view showing a modification of the substrate holder associated with one embodiment of the present invention. 19/24 201218311 [Description of main component symbols] 11 Loading chamber 12 Film forming chamber 12a End portion 13 Gate valve 20, 30, 40 Substrate holding 21 Retainer body 21a Support surface (cooling surface) 21b Back surface 22, 32 Adhesive mechanism 23 Through hole 32 adhesion mechanism 33 heat insulating member 41' 42 permanent magnet 100 film forming apparatus 120 cathode unit 121 first target portion 122 second target portion 141 first vacuum valve 142 second vacuum valve 151 first vacuum pump 152 second vacuum pump 221 Fixture 222 Base plate 223 Spring member 224 Adjustment screw 20/24 201218311 225 Bracket 226 Guide rail 227 Long hole 228 Screw member 229 Fixing part 321 Roller member 322 Support shaft 323 Base S Substrate P Radius of curvature R Radius La Axis C Axis direction D Circumferential direction 21/24