JP5651693B2 - Substrate holder and film forming apparatus - Google Patents

Description

  The present invention relates to a substrate holder for supporting a film-like substrate that is a film formation target, a film formation apparatus including the substrate holder, and a film formation method.

  In recent years, there has been known a sputtering apparatus that forms a thin film on a substrate while moving the substrate relative to a target in a sputtering chamber (see, for example, Patent Document 1 below). The sputtering apparatus includes a plurality of targets fixed in the sputtering chamber, and a moving mechanism that moves the substrate in the sputtering chamber while arranging the surface of the target and the surface of the substrate substantially in parallel.

JP 2009-138230 A

  In the configuration described in Patent Document 1, when the substrate is formed of a plastic film or the like, the substrate is damaged (burned) by heat during film formation, and proper film formation becomes impossible. Therefore, a method is conceivable in which a substrate is placed on a cooling surface and a film is formed while absorbing heat input to the substrate by the cooling surface.

  However, in general, the above-described method is not easy to ensure adhesion between the substrate and the cooling surface. For this reason, the temperature of the substrate rises due to heat input to the substrate during film formation, causing damage to the substrate. In particular, the adhesiveness with the cooling surface is lowered due to thermal deformation of the substrate, and the damage at the portion where the adhesiveness is lowered becomes more remarkable. On the other hand, if the amount of film formation per sputter cathode is limited in order to reduce the amount of heat input to the substrate, a large number of cathodes are required to form a thick film.

  In view of the circumstances as described above, an object of the present invention is to provide a substrate holder, a film forming apparatus, and a film forming method capable of preventing a film-like substrate from being damaged by heat and realizing an appropriate film forming process. .

In order to achieve the above object, a substrate holder according to an embodiment of the present invention is a substrate holder that is disposed to face a film forming source and supports a film-like substrate, and includes a holder body, a contact mechanism, It comprises.
The holder body has a support surface formed by a partial peripheral surface of a cylindrical body having an axial direction parallel to the axial center and a circumferential direction around the axial center. The holder body is disposed to face the film forming source in a state where the substrate is supported on the support surface.
The contact mechanism is installed in the holder body and maintains the contact state of the substrate to the support surface.

In addition, a film formation apparatus according to one embodiment of the present invention includes a film formation chamber, a film formation source, and a substrate holder.
The film formation source is disposed in the film formation chamber.
The substrate holder includes a holder main body and a contact mechanism. The holder body has a support surface formed by a partial peripheral surface of a cylindrical body having an axial direction parallel to the axis and a circumferential direction around the axis, and supports the film-like substrate on the support surface In this state, the film is disposed to face the film forming source. The contact mechanism is installed in the holder body and maintains the contact state of the substrate to the support surface.

Furthermore, a film forming method according to an embodiment of the present invention includes a film-like substrate on a support surface formed by a partial circumferential surface of a cylindrical body having an axial direction parallel to an axial center and a circumferential direction around the axial center. Including a step of arranging.
By generating a tension along the circumferential direction on the substrate, the substrate is brought into close contact with the support surface.
A film is formed on the substrate by a film formation source facing the support surface.

It is a schematic plan view of the film-forming apparatus which concerns on one Embodiment of this invention. It is the whole substrate holder perspective view concerning one embodiment of the present invention. It is a top view of the said substrate holder. It is a side view of the said substrate holder. It is a reverse view of the said substrate holder. It is a schematic side view of the substrate holder which concerns on other embodiment of this invention. It is a schematic side view which shows the modification of the substrate holder which concerns on one Embodiment of this invention.

The substrate holder which concerns on one Embodiment of this invention is a substrate holder for arrange | positioning facing a film-forming source and supporting a film-form board | substrate, Comprising: A holder main body and a close_contact | adherence mechanism are comprised.
The holder body has a support surface formed by a partial peripheral surface of a cylindrical body having an axial direction parallel to the axial center and a circumferential direction around the axial center. The holder body is disposed to face the film forming source in a state where the substrate is supported on the support surface.
The contact mechanism is installed in the holder body and maintains the contact state of the substrate to the support surface.

  In the substrate holder, the holder body is formed of a material having excellent thermal conductivity such as metal, and a part of the peripheral surface functions as a support surface for supporting the substrate. The contact mechanism has a function of bringing the substrate into close contact with the support surface. Here, since the support surface is formed by a partial peripheral surface of a cylindrical body having an axial direction parallel to the axial center and a circumferential direction around the axial center, the film-like substrate generates wrinkles. And securely adheres to the support surface.

  The support surface forms a cooling surface for cooling the substrate. As a result, thermal damage to the substrate due to heat input during film formation can be prevented, and appropriate film formation processing can be performed. In addition, since the substrate is not required to have heat resistance, the degree of freedom of the substrate material can be increased.

  The method for bringing the base material into close contact with the support surface is not particularly limited, and for example, a base material sandwiching structure using a clamp, a permanent magnet, or the like, or adhesion using an adhesive tape can be applied.

The close-contact mechanism may include a tension generator that can generate a tension along the circumferential direction on the substrate.
Thereby, the adhesiveness of the board | substrate with respect to the support surface of a board | substrate holder can be improved.

The tension generator may include first and second fixtures and an elastic member.
The first and second fixtures can each fix each end of the substrate in the circumferential direction. The elastic member applies the tension to the substrate.
Thereby, desired tension | tensile_strength can be provided with respect to a base material with the elastic force of an elastic member, and a base material can be stuck to a support surface.

The tension generation unit may include first and second roller members and a support shaft. The first and second roller members may be wound around each end of the substrate in the circumferential direction. The support shaft rotatably supports the first and second roller members.
Thereby, desired tension | tensile_strength can be provided with respect to a base material by rotating the said support shaft, and a base material can be stuck to a support surface.

The support surface may have a vent path for degassing.
Thereby, retention of the emitted gas from a base material can be suppressed between a base material and a support surface, and favorable adhesion | attachment with a base material and a support surface can be maintained. The air passage is constituted by, for example, a hole or a groove formed on the support surface. Moreover, in order to ensure the said ventilation path, a support surface may be formed with a porous material.

The tension generator may be a bimetal capable of bending the support surface by heat input.
As a result, it is possible to absorb the decrease in adhesion due to the bending of the substrate due to heat input during film formation by the deformation of the support surface.

A film forming apparatus according to an embodiment of the present invention includes a film forming chamber, a film forming source, and a substrate holder.
The film formation source is disposed in the film formation chamber.
The substrate holder includes a holder main body and a contact mechanism. The holder body has a support surface formed by a partial peripheral surface of a cylindrical body having an axial direction parallel to the axis and a circumferential direction around the axis, and supports the film-like substrate on the support surface In this state, the film is disposed to face the film forming source. The contact mechanism is installed in the holder body and maintains the contact state of the substrate to the support surface.

In a film forming method according to an embodiment of the present invention, a film-like substrate is formed on a support surface formed by a partial peripheral surface of a cylindrical body having an axial direction parallel to the axial center and a circumferential direction around the axial center. Including the step of arranging.
By generating a tension along the circumferential direction on the substrate, the substrate is brought into close contact with the support surface.
A film is formed on the substrate by a film formation source facing the support surface.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<First Embodiment>
FIG. 1 is a schematic plan view showing a film forming apparatus according to an embodiment of the present invention. Hereinafter, a schematic configuration of the film forming apparatus 100 of the present embodiment will be described.

[Film deposition system]
The film forming apparatus 100 includes a preparation chamber 11, a film formation chamber 12, and a gate valve 13 installed between the preparation chamber 11 and the film formation chamber 12. The film forming apparatus 100 further includes a vacuum pump 151 that exhausts the preparation chamber 11 and a vacuum pump 152 that exhausts the film forming chamber 12. The film formation apparatus 100 forms a thin film on the surface of the substrate S transferred from the preparation chamber 11 to the film formation chamber 12, and carries the substrate S out through the preparation chamber 11 after film formation.

  The preparation chamber 11 is connected to the first vacuum pump 151 via the first vacuum valve 141. The preparation chamber 11 is evacuated to a predetermined pressure by the vacuum pump 151 after the substrate is loaded into the preparation chamber 11.

  The film forming chamber 12 is configured as a sputtering chamber in this embodiment. That is, the film forming chamber 12 includes a cathode unit 120 and a gas introduction line (not shown) for introducing a process gas into the film forming chamber 12. The cathode unit 120 (film formation source) includes a first target unit 121, a second target unit 122, and a magnet assembly for magnetron discharge disposed on the target units 121 and 122, respectively. The cathode unit 120 is installed facing one side wall of the film forming chamber 12. The target units 121 and 122 may be driven simultaneously or independently of each other. The discharge method of the target units 121 and 122 is not particularly limited, and an appropriate method such as DC discharge, AC discharge, or RF discharge can be employed.

  The target portions 121 and 122 have target materials installed according to the types of film forming materials. Examples of the material to be formed on the substrate S include organic materials as well as inorganic materials such as metals and metal compounds, and the formed thin film may be a single layer film, a laminated film, a composite film, or the like. In the case of forming a single layer film, the target parts 121 and 122 are formed of the same material, and in the case of forming a laminated film and a composite film, the target parts 121 and 122 are formed of different materials. In this embodiment, the target part 121 has a molybdenum (Mo) target, and the target part 122 has an aluminum (Al) target.

  The film forming apparatus 100 further includes a substrate holder 20 that supports the substrate S and a transport mechanism (not shown) that transports the substrate S in the film forming chamber 12. The transport mechanism transports the substrate holder 20 from the preparation chamber 11 side toward the end portion 12a of the film formation chamber 12 along the arrow A at a constant speed. The transport mechanism transports the substrate holder 20 linearly at a constant speed along the arrow B from the end 12a side of the film forming chamber 12 toward the preparation chamber 11 side. In the present embodiment, the substrate S passes through the front of the target parts 121 and 122 in the outward path along the arrow A and the return path along the arrow B, respectively. A film forming process is performed.

  The transport mechanism includes, for example, a guide rail that guides the travel of the substrate holder 20 and a drive source that moves the substrate holder 20 along the guide rail. Alternatively, as the transport mechanism, a form of transporting while supporting the substrate holder 20 in a suspended state may be employed.

  In addition, it is not restricted to said example, The film-forming process may be performed for the board | substrate S in any one of an outward path | route and a return path | route. Alternatively, a method of forming a film in a state where the substrate S is stopped in front of the target units 121 and 122 may be employed. Further, the present invention is not limited to the example in which the substrate S is reciprocated within the film forming chamber 12. For example, the transfer direction of the substrate S can be limited to the A direction by installing an extraction chamber at the end 12a of the film formation chamber 12 via a gate valve. Furthermore, the number of target portions 121 and 122 can be increased or decreased depending on the thickness of the film formation.

  As the substrate S, a film-like substrate having flexibility is used. In the present embodiment, a plastic film such as PET (polyethylene terephthalate) or PC (polycarbonate) is used as the substrate S. It does not matter whether the substrate S has heat resistance. The shape of the substrate S is not particularly limited and is typically rectangular. The substrate S is not limited to a plastic single layer film, and other layers such as a metal layer may be formed on the surface thereof.

[Substrate holder]
Next, details of the substrate holder 20 will be described. 2 is an overall perspective view of the substrate holder 20, FIG. 3 is a plan view of the substrate holder 20, FIG. 4 is a side view of the substrate holder 20, and FIG.

  The substrate holder 20 includes a holder main body 21 and a contact mechanism 22.

  The holder main body 21 is made of a metal material having excellent thermal conductivity, such as copper, aluminum, or steel material. The holder main body 21 is formed of a substantially rectangular plate, and has a support surface 21a for supporting the substrate S on one surface. As shown in FIG. 2, the support surface 21 a is a cylindrical body (cylindrical body) having a radius R and having an axial direction C parallel to the axial center La extending along the Z-axis direction and a circumferential direction D around the axial center La. ) Part outer peripheral surface.

  The holder main body 21 is installed inside the film forming chamber 12 with the axial direction C facing the vertical direction so that the support surface 21 a faces the surfaces of the target portions 121 and 122. The support surface 21a functions as a cooling surface that supports the substrate S and cools the substrate S when the substrate S is formed.

  The support surface 21a has a partial cylindrical shape that is convex on the surface side of the target portions 121 and 122, and the radius of curvature R is not particularly limited, and is, for example, 500 mm to 10000 mm. When the radius R is less than 500 mm, it is difficult to ensure a good film thickness distribution on the substrate S. Moreover, when the radius R exceeds 10,000 mm, it becomes difficult to ensure good adhesion of the substrate S to the support surface 21a.

  The holder main body 21 has a plurality of through holes 23 penetrating between the support surface 21a and the back surface 21b opposite to the support surface 21a. The through hole 23 forms a ventilation path that guides the gas released from the substrate S on the support surface 21 a to the outside of the holder body 21. The through holes 23 are not limited to the example regularly formed in a grid shape on the support surface 21a as shown in FIG. The number of through holes 23 formed is not particularly limited, and can be set as appropriate according to the size of the substrate S, the diameter of the through holes 23, and the like. The hole diameter of the through-hole 23 is not specifically limited, For example, it is 1 mm. Furthermore, the shape of the through hole 23 is not limited to a cylindrical shape, and may be a conical shape, or may be a shape combining a cylinder and a cone.

  The air passage is formed for the purpose of eliminating the poor adhesion between the substrate S and the support surface 21a caused by the gas released from the substrate S. Therefore, the ventilation path is not limited to the example formed by the above-described through-hole 23, and may be formed by, for example, a plurality of grooves formed in a stripe shape or a mesh shape on the support surface 21a. Furthermore, it is possible to eliminate the influence of the emitted gas by configuring the support surface 21a (or the holder main body 21) with a porous material. In this case, as the porous material, a sintered body of metal fine powder, a green compact, or the like can be applied.

  The close contact mechanism 22 is for maintaining the close contact state of the substrate S to the support surface 21 a and is installed on the back surface 21 b of the holder main body 21. The close contact mechanism 22 of the present embodiment has a function of generating a tension along the circumferential direction D with respect to the base material S on the support surface 21a.

  As shown in FIGS. 4 and 5, the contact mechanism 22 includes a pair of fixtures 221 (first and second fixtures) and a plurality of fixtures 221 that are attached to the fixtures 221 and apply the tension to the substrate S. Spring member 223 (elastic member). Each fixing tool 221 has a clamp structure that can clamp the end portion of the substrate S. The clamp structure may be a mechanical clamping structure or a clamping structure using the magnetic force of a permanent magnet. Each fixing tool 221 has a length that can be held over the entire width of the end portion of the base material S. On the other hand, each spring member 223 is installed between a base plate 222 and each fixture 221 fixed to the back surface 21 b of the holder body 21.

  The fixture 221, the spring member 223, and the like constitute a tension generating unit that generates a tension along the circumferential direction D on the substrate S on the support surface 21 a. The magnitude of the tension can be adjusted as appropriate depending on the spring constant, the number of attached spring members 223, and the like.

  Moreover, in this embodiment, it has the adjustment unit which moves each base board 222 relative to the back surface 21b of the holder main body 21 in the X-axis direction. Thereby, the spring force of the spring member 223 can be adjusted, and a desired tension can be applied to the substrate S.

  The adjustment unit includes a guide rail 226 that guides the movement of each base plate 222, an adjustment screw 224 that moves each base plate 222 on the guide rail 226, and each base plate 222 on the guide rail 226 at an arbitrary position. And a fixing portion 229 for fixing to the holder main body 21. The adjustment screw 224 is supported by a bracket 225 fixed to the back surface 21 b of the holder body 21, and the tip end portion of the adjustment screw 224 is screwed into the base plate 222. Therefore, the base plate 222 can be moved on the guide rail 226 by rotating the adjusting screw 224 about the axis. The fixing portion 229 is formed in the base plate 222 and has a plurality of long holes 227 having a long axis in the moving direction (X-axis direction) of the base plate 222, and passes through the long holes 227 and is screwed to the back surface 21b of the holder body 21. And a possible screw member 228.

[Operation example of film deposition system]
Next, an example of the operation of the substrate holder 20 and the film forming apparatus 100 of the present embodiment configured as described above will be described.

  The substrate S is disposed on the support surface 21a of the substrate holder 20 with the surface to be deposited facing outward. The substrate S is held by the holder main body 21 by fixing both ends of the support surface 21 a in the circumferential direction D to the fixture 221 of the contact mechanism 22.

  Since the support surface 21a is formed of a partially cylindrical peripheral surface having an axial direction C parallel to the axial center La and a circumferential direction D around the axial center La, the substrate S does not generate wrinkles. It is securely adhered to the support surface 21a. As a result, thermal damage to the substrate due to heat input during film formation can be prevented, and appropriate film formation processing can be performed.

  The substrate S receives the elastic force of the spring member 223 and is given a tension along the circumferential direction D, so that the substrate S is deformed according to the shape of the support surface 21a and is in close contact with the support surface 21a. In addition, since each fixture 221 has a length that can be sandwiched over the entire width of the end portion of the substrate S, a desired tension can be applied to the substrate S without generating wrinkles.

  Thus, by applying tension along the circumferential direction D to the substrate S, the adhesion of the substrate S to the support surface 21a can be enhanced. Further, even when the substrate S is stretched due to heat input during film formation, the substrate S can be kept in a stable contact state with the support surface 21a by the tension.

  In addition, installation of the board | substrate S with respect to the board | substrate holder 20 may be performed by the operator, and may be automatically performed using the robot etc.

  As described above, the substrate S placed on the substrate holder 20 is carried into the preparation chamber 11 together with the substrate holder 20. The preparation chamber 11 is evacuated to a predetermined pressure and then transferred via the gate valve 13 to the film formation chamber 12 maintained at a predetermined film formation pressure.

  The substrate holder 20 is linearly transported in the direction of arrow A through a transport mechanism (not shown) in the film forming chamber 12. At this time, the substrate holder 20 is transported in a direction orthogonal to the axial direction C (X-axis direction) with the axial direction C of the support surface 21a oriented in the vertical direction. Accordingly, the substrate S is transported in the film forming chamber 12 by the substrate holder 20 so as to cross the position facing the cathode unit 120.

  The cathode unit 120 sputter-deposits the constituent materials of the target parts 121 and 122 on the surface of the substrate S supported by the substrate holder 20. That is, the substrate S passes through the front surface of the target unit 121 and the target unit 122 in order during conveyance of the forward path (arrow A in FIG. 1), whereby a stacked film of the Mo film and the Al film is formed on the substrate S. At this time, heat input to the substrate S is absorbed by the holder main body 21 via the support surface 21 a that is in close contact with the substrate S. That is, the support surface 21a functions as a cooling surface of the substrate S, and suppresses thermal damage of the substrate S during film formation to ensure an appropriate film formation process.

  In addition, there is a case where emitted gas is generated from the substrate S due to heat input to the substrate S during film formation. In the present embodiment, since the plurality of through holes 23 are formed in the support surface 21a, these through holes are guided to the outside of the support surface 21a with the air passages. Thereby, since the retention of the released gas between the substrate S and the support surface 21a can be prevented, a decrease in adhesion between the substrate S and the support surface 21a can be suppressed.

  When the substrate holder 20 reaches the end 12a of the film forming chamber 12, it is transported toward the preparation chamber 11 side. The substrate S sequentially passes through the front surface of the target portion 122 and the target portion 121 during the return path (arrow B in FIG. 1), whereby an Al film and a Mo film are further formed on the substrate S. After film formation, the substrate holder 20 is returned to the preparation chamber 11 via the gate valve 13. Then, after the gate valve 13 is closed and the preparation chamber 11 is opened to the atmosphere, the substrate holder 20 that supports the deposited substrate S is taken out from the preparation chamber 11 to the outside.

  As described above, according to the present embodiment, a good adhesion state of the substrate S to the support surface 21a is ensured, so that thermal damage of the substrate S due to heat input during film formation is prevented, and proper film formation is achieved. Processing can be performed. In addition, a relatively thick metal film can be formed on the substrate S without requiring many sputter cathodes. Furthermore, since heat resistance is not required for the substrate, the degree of freedom of the substrate material can be increased.

[Experimental example]
The inventors of the present invention formed a Mo—Al laminated film on a substrate using the film forming apparatus 100 shown in FIG. 1 and measured the surface resistance and uniformity of the prepared thin film sample. A PET film having a thickness of 50 μm was used as the substrate. The shape of the substrate was a 300 mm × 300 mm square. The curvature radius of the cylindrical surface forming the support surface 21a of the substrate holder 20 was 2285 mm. The pressure in the film forming chamber 12 (film forming pressure) was 0.4 Pa, and the conveyance speed of the substrate holder was 0.67 m / min.

Further, the target material of the first target portion 121 constituting the cathode unit 120 was a MoNb alloy, and the target material of the second target portion 122 was an AlNd alloy. The power density of the first target portion 121 was 1.5 W / cm ^2, and the power density of the second target portion 122 was 8.8 W / cm ² . In the experiment, a film was formed using both target parts 121 and 122 in the forward path and the return path. The thickness of each layer of the thin film sample was MoNb (330 Å) / AlNd (3400 Å) / MoNb (340 Å).

  The results of the experiment are shown in Table 1. As a comparative example, the results when using a substrate holder having a flat support surface are also shown. According to this experimental example, a thin film sample having a surface resistance of 0.22Ω / □ was obtained. The in-plane distribution of surface resistance was 7.9%. Thereby, it can be confirmed that the metal film can be properly formed on the substrate. On the other hand, in the comparative example, the substrate was damaged (burned out) due to the poor adhesion of the substrate to the support surface, and film formation was impossible.

<Second Embodiment>
FIG. 6 is a schematic side view of a substrate holder according to another embodiment of the present invention. In the figure, portions corresponding to those of the first embodiment described above are denoted by the same reference numerals, and detailed description thereof is omitted.

  The substrate holder 30 according to the present embodiment includes a holder main body 21 and a contact mechanism 32. The contact mechanism 32 of the present embodiment includes a pair of roller members 321 and a support shaft 322 that supports each roller member 321 so as to be rotatable about its axis. The roller member 321 is wound around each end portion in the circumferential direction of the substrate S disposed on the support surface 21a of the holder body 21. The support shaft 322 is attached to a pedestal 323 fixed to the back surface of the holder main body 21. Although not shown, a stopper that prohibits the rotation of the roller member 321 is attached to the support shaft 322.

  In addition, the base material S around the roller member 321 has low or no close contact with the support surface 21a, and thus may be damaged by heat input during film formation. Therefore, in the present embodiment, the heat shielding members 33 are respectively installed on the pedestal 323 so that the base material S located around the roller member 321 is protected from thermal damage.

  In the present embodiment, a predetermined tension along the circumferential direction is applied to the base material S by rotating at least one of the roller members 321. Thereby, the same effect as the above-mentioned 1st Embodiment can be acquired.

  The embodiment of the present invention has been described above, but the present invention is not limited to this, and various modifications can be made based on the technical idea of the present invention.

  For example, in the first embodiment described above, the spring member 223 and the adjustment unit for the elastic force are installed at both ends of the substrate S as the close contact mechanism. However, the present invention is not limited to this, and only the at least one end of the substrate S is provided. The spring member 223 and the adjustment unit may be installed. The same applies to the second embodiment described above.

  In each of the above embodiments, the support surface 21a of the holder body 21 is formed as a partial cylindrical surface. However, the present invention is not limited to this, and may be another curved shape such as an aspherical surface or a hyperboloid.

  On the other hand, a bimetal can be used as a method of applying a predetermined tension to the substrate disposed on the support surface of the holder body. Bimetal is a functional material formed by laminating two metal plates having different thermal expansion coefficients, and has a property that the way of bending (curvature) changes with changes in temperature. By applying such a material to the support surface of the holder body, an appropriate stress can be applied to the substrate S by heat input during film formation. Thereby, the favorable adhesiveness between a board | substrate and a support surface can be maintained.

  Furthermore, the method of fixing the substrate to the support surface of the substrate holder is not limited to the above example, and for example, a base material holding structure using a clamp, a permanent magnet, or the like, adhesion using an adhesive tape, or the like is applicable. . FIG. 7 schematically shows a substrate holder 40 that attaches the permanent magnets 41 and 42 around the holder main body 21 to bring the substrate S into close contact with the support surface 21a. In this case, the permanent magnets 41 and 42 can be fixed in a state where tension is applied to the substrate S in advance.

  In the above embodiment, the sputtering apparatus has been described as an example of the film forming apparatus. However, the present invention is not limited to this, and the present invention is applicable to other film forming apparatuses such as a vacuum evaporation apparatus, a CVD apparatus, and an ion plating apparatus. Applicable. In this case, the deposition source corresponds to an evaporation source, a shower plate (plasma generating electrode), or the like. In the present embodiment, the film forming apparatus having the preparation chamber and the film forming chamber as shown in FIG. 1 has been described. However, the present invention can also be applied to a batch type apparatus including only the film forming chamber. Furthermore, the substrate holder can be applied to a degassing step and a degassing apparatus that perform heat degassing from a film or the like in a reduced pressure in addition to the film forming apparatus.

DESCRIPTION OF SYMBOLS 12 ... Film-forming chamber 20, 30, 40 ... Substrate holder 21 ... Holder main body 21a ... Support surface (cooling surface)
22, 32 ... Contact mechanism 100 ... Film forming apparatus 120 ... Cathode unit 121, 122 ... Target part S ... Substrate

Claims (9)

A substrate holder that is disposed to face a film forming source and supports a film-like substrate,
A film forming source having a support surface formed by a partial peripheral surface of a cylindrical body having an axial direction parallel to the axial center and a circumferential direction around the axial center, wherein the substrate is supported on the supporting surface; A holder body disposed opposite to the
A tension generating unit capable of generating a tension along the circumferential direction on the substrate, and a contact mechanism installed on the holder body and maintaining the contact state of the substrate to the support surface ,
The tension generation part is a substrate holder including a bimetal that is applied to the support surface and can bend the support surface by heat input . The substrate holder according to claim 1,
The support surface is a substrate holder that forms a cooling surface for cooling the substrate. The substrate holder according to claim 1,
The support surface is a substrate holder having a vent path for degassing. The substrate holder according to claim 3 , wherein
The holder body is a substrate holder formed of a porous material. A deposition chamber;
A deposition source disposed in the deposition chamber;
A support surface formed by a partial peripheral surface of a cylindrical body having an axial direction parallel to the axis and a circumferential direction around the axis, and the film-shaped substrate is supported on the support surface in a state where the film-shaped substrate is supported. A holder body disposed opposite the membrane source;
A substrate holder comprising: a tension generating unit capable of generating a tension along the circumferential direction on the substrate; and a contact mechanism installed on the holder main body and maintaining the contact state of the substrate to the support surface; equipped with,
The tension generation unit is a film forming apparatus including a bimetal that is applied to the support surface and can bend the support surface by heat input . The film forming apparatus according to claim 5 ,
A film forming apparatus further comprising a transfer mechanism for transferring the substrate holder in the film forming chamber so as to cross a position facing the film forming source. The film forming apparatus according to claim 6 ,
The transport mechanism is a film forming apparatus that transports the substrate holder linearly in a direction orthogonal to the axial direction. The film forming apparatus according to claim 6 ,
A film forming apparatus in which a plurality of the film forming sources are arranged along a transport direction of the substrate holder. The film forming apparatus according to claim 5 ,
The film forming source is a film forming apparatus which is a sputtering cathode.

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