KR101778592B1 - Deposition chamber including inner shield having weight frame - Google Patents

Deposition chamber including inner shield having weight frame Download PDF

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Publication number
KR101778592B1
KR101778592B1 KR1020160013911A KR20160013911A KR101778592B1 KR 101778592 B1 KR101778592 B1 KR 101778592B1 KR 1020160013911 A KR1020160013911 A KR 1020160013911A KR 20160013911 A KR20160013911 A KR 20160013911A KR 101778592 B1 KR101778592 B1 KR 101778592B1
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South Korea
Prior art keywords
sample
film
weight
inner shield
sample holder
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KR1020160013911A
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Korean (ko)
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KR20170092796A (en
Inventor
안경준
김찬호
정성훈
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(주)에스엔텍
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Priority to KR1020160013911A priority Critical patent/KR101778592B1/en
Priority to PCT/KR2016/008782 priority patent/WO2017030315A1/en
Priority to TW105126312A priority patent/TWI623641B/en
Publication of KR20170092796A publication Critical patent/KR20170092796A/en
Application granted granted Critical
Publication of KR101778592B1 publication Critical patent/KR101778592B1/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/541Heating or cooling of the substrates
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • H05K9/0073Shielding materials
    • H05K9/0081Electromagnetic shielding materials, e.g. EMI, RFI shielding

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention relates to a deposition chamber apparatus, and more particularly, to a deposition chamber apparatus capable of closely contacting a sample-attached film with a suitable pressure to a sample holder using the weight of a weight, The present invention relates to a deposition chamber apparatus capable of effectively performing temperature control of a deposition chamber and a deposition chamber apparatus in which a weight is adhered to a film to divide the deposition space and the non-deposition space based on the inner shield.

Description

[0001] The present invention relates to a deposition chamber including an inner shield having a weight,

The present invention relates to a deposition chamber apparatus, and more particularly, to a deposition chamber apparatus capable of closely contacting a sample-attached film with a suitable pressure to a sample holder using the weight of a weight, The present invention relates to a deposition chamber apparatus capable of effectively performing temperature control of a deposition chamber and a deposition chamber apparatus in which a weight is adhered to a film to divide the deposition space and the non-deposition space based on the inner shield.

In order to shield electromagnetic interference (EMI) of a sample such as a printed circuit board, a method of attaching a shielding film to the surface of a sample is generally used.

The method of attaching such a shielding film has a problem in that productivity, shielding uniformity, and stability are lowered because the processes such as shape processing, mold production, and fabric attachment are performed by hand, but they are continuously used because they are easy to control the instantaneous production amount .

Recently, researches for conducting electromagnetic wave shielding of samples using a vacuum deposition method such as sputtering have been actively carried out. Electromagnetic wave shielding through vacuum deposition can automate all processes, thereby reducing production cost and achieving uniform thin film deposition It has attracted attention because of its advantages.

Generally, in order to perform electromagnetic shielding of a sample by using a vacuum deposition method, a sample is attached to a temperature-controlling chuck (generally a cooling chuck) and then fixed in a vacuum chamber (batch type) to deposit a shielding layer (In-line type) deposition. Applicants mount a plurality of samples by attaching them to an adhesive film and attaching them to the temperature control chuck.

However, this adhesive film causes thermal deformation due to an increase in the internal temperature of the vacuum chamber, so that the sample is not brought into close contact with the temperature control chuck, and the temperature control effect of the sample is lowered.

If the temperature control effect is so low that the temperature of the sample is not controlled, there is a problem that the electromagnetic wave shielding layer is unevenly deposited or the sample is damaged by heat.

Meanwhile, when the evaporation material is scattered in the vacuum chamber, the evaporation material is scattered to the undesired space in the vacuum chamber, which shortens the cleaning period for cleaning the inside of the vacuum chamber to lower the operation rate of the deposition chamber device It acts as a cause.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to improve the temperature control efficiency of a sample by maximizing the adhesion between a sample to be deposited and a sample holder, To provide a deposition chamber apparatus having a deposition chamber.

Another object of the present invention is to provide a deposition chamber apparatus capable of bringing a sample into close contact with a sample holder without deforming or breaking the film with a simple structure when the film with the sample is pressed toward the sample holder.

It is still another object of the present invention to provide a deposition chamber apparatus capable of preventing deposition of deposition material in an undesired space of an internal space of a vacuum chamber, thereby extending a cleaning cycle.

According to an aspect of the present invention, there is provided a vacuum chamber comprising: a vacuum chamber; A cathode disposed within the vacuum chamber to scatter the evaporation material; A sample holder placed inside the vacuum chamber so as to face the cathode, the sample being an object to be vapor deposited; And an inner shield disposed between the sample holder and the cathode within the vacuum chamber, the inner shield shielding a region of the region between the cathode and the sample holder, and limiting a region where the evaporation material scatters to the sample. Wherein the sample is attached on a film and is placed on the sample holder, and a weight is further provided under the edge of the opening area of the inner shield, and when the inner shield is lowered or the sample holder is lifted, Contacting the upper edge of the film and pressing the film toward the sample holder to cause the film to be brought into close contact with the upper surface of the sample holder.

In a preferred embodiment, the weight is provided so as to be movable up and down on the inner shield.

In a preferred embodiment, the weight is exposed to the lower portion of the inner shield by its own weight, and after the inner shield is lowered or the sample holder is raised to contact the film, the inner shield is further lowered, The inner shield is inserted into the inner shield to provide a pressure due to its own weight to the film.

In a preferred embodiment, a support frame for supporting the shape of the film is attached to an upper edge of the film, and the weight presses the upper surface of the support frame to bring the film into close contact with the sample holder.

In a preferred embodiment, the vacuum chamber is divided into an evaporation space, which is an upper space, and a non-evaporation space, which is a lower space, based on the inner shield and the film when the weight is brought into contact with the film.

In a preferred embodiment, the weight is composed of circular or elliptical ring or polygonal frames.

In a preferred embodiment, the weight is made of copper.

In a preferred embodiment, the sample holder comprises a temperature controllable chuck; And a sample adapter stacked on top of the temperature control chuck and having an upper surface on which a film with the sample attached is placed and which transfers the heat of the sample to the temperature control chuck or transfers the heat of the temperature control chuck to the sample, .

In a preferred embodiment, the temperature control chuck and the sample adapter may be integrally constituted.

In a preferred embodiment, a buffer pad for close contact of the film is coated or attached to the upper surface of the sample adapter.

In a preferred embodiment, the upper surface of the sample adapter is a curved surface.

In a preferred embodiment, the upper surface of the sample adapter is a cylindrical surface or a spherical surface.

In a preferred embodiment, the top surface width of the sample adapter is smaller than the width of the film.

In a preferred embodiment, the top surface area of the sample adapter is smaller than the area of the film.

In a preferred embodiment, a plurality of grooves are formed on the upper surface of the sample adapter.

In a preferred embodiment, the grooves are connected to one another.

In a preferred embodiment, the grooves are formed in a lattice shape.

In a preferred embodiment, the sample adapter is provided with an exhaust line which, when loaded on the film, exhausts the air of the groove to cause the film to adhere to the upper surface of the sample adapter.

In a preferred embodiment, an insulating layer is coated or attached to the top surface of the sample adapter.

The present invention further provides a device in which a plurality of films are attached to a film to deposit a coating layer on the deposition chamber device.

The present invention has the following excellent effects.

According to the deposition chamber apparatus of the present invention, the edge of the film to which the sample is attached is pressed toward the sample holder using a weight, thereby improving the temperature control efficiency of the sample by increasing the adhesion between the sample and the sample holder .

In addition, according to the deposition chamber apparatus of the present invention, since the upper surface of the sample holder is curved to maximize the adhesion between the sample and the sample adapter, the temperature control efficiency can be enhanced and the quality of the deposition can be greatly improved.

Further, according to the deposition chamber apparatus of the present invention, since the film can be pressed by the weight of the weight without a separate driving device, the structure can be simplified and the film can be pressed with an appropriate load, There are advantages.

In addition, according to the deposition chamber apparatus of the present invention, deposition materials can be deposited only in the deposition space, which is the upper space, based on the film that is in close contact with the inner shield and the inner shield in the inner space of the vacuum chamber, Deposition of the deposition material in the space is prevented, and the yield of the cleaning chamber can be improved by extending the cleaning cycle in the vacuum chamber.

1 is a view showing a deposition chamber apparatus according to an embodiment of the present invention,
2 is a view showing a sample holder of a deposition chamber apparatus according to an embodiment of the present invention,
3 shows another example of the sample holder shown in Fig. 2,
4 is a top view of a sample holder of a deposition chamber apparatus according to an embodiment of the present invention,
Fig. 5 shows another example of the upper surface shown in Fig. 4,
FIG. 6 is a diagram illustrating deposition of a sample to be deposited on a film in a deposition chamber apparatus according to an embodiment of the present invention;
7 is a top view of an inner shield of a deposition chamber apparatus according to an embodiment of the present invention,
FIG. 8 is a bottom view of the inner shield of FIG. 7,
9 to 10 are views for explaining a process of depositing a sample using a deposition chamber apparatus according to an embodiment of the present invention.

Although the terms used in the present invention have been selected as general terms that are widely used at present, there are some terms selected arbitrarily by the applicant in a specific case. In this case, the meaning described or used in the detailed description part of the invention The meaning must be grasped.

Hereinafter, the technical structure of the present invention will be described in detail with reference to preferred embodiments shown in the accompanying drawings.

However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Like reference numerals designate like elements throughout the specification.

FIG. 1 illustrates a deposition chamber apparatus according to an embodiment of the present invention, and a deposition chamber apparatus 100 according to an embodiment of the present invention includes a substrate 10 for depositing a predetermined coating layer on a sample 10 such as an electric / Device.

In addition, the coating layer may be an electromagnetic interference (EMI) shielding layer.

Referring to FIG. 1, a deposition chamber apparatus 100 according to an embodiment of the present invention includes a vacuum chamber 110, a cathode 120, a sample holder 130, and an inner shield 140 .

The vacuum chamber 110 is a chamber that provides a deposition space in a vacuum atmosphere in which the sample 10 can be received.

The cathode 120 is disposed inside the vacuum chamber 110 and is an electrode for causing a deposition material to be deposited on the sample 10 to be scattered.

When performing physical vapor deposition, the cathode 120 is coated with a target, which is an evaporation material, on the outside. When chemical vapor deposition is performed, the cathode 120 functions as an electrode for plasma formation without coating a separate target.

The sample holder 130 is disposed inside the vacuum chamber 110 so as to face the cathode 120, and a sample 10 as an object to be deposited is placed on the upper surface of the sample holder 130.

In addition, the sample 10 may be an electrical and / or electronic device and attached to the film 20 and mounted on the sample holder 130.

In addition, the film 20 may be provided as an adhesive film for attachment of the sample 10, for example, a polyimide film (PI film).

6, a support frame 30 for supporting the shape of the film 20 is attached to a top surface of the film 20, and one film 20 is provided with a plurality of samples 10 may be attached.

That is, the deposition chamber apparatus 100 according to an embodiment of the present invention can form a coating layer on a plurality of samples 10 through a single deposition process.

The sample holder 130 can be fixed in the vacuum chamber 110, reciprocated in the horizontal direction, and passed through the inside of the vacuum chamber 110.

That is, the sample holder 130 may be deposited in a batch type in the vacuum chamber 110, and may be deposited in an in-line type.

Also, the sample holder 130 moves up and down toward the cathode 120, and the film 20 can be contacted or released.

2, the sample holder 130 includes a temperature adjusting chuck 131 and a sample adapter 132. As shown in FIG. 3, the sample holder 130 includes a temperature adjusting chuck 131 And the sample adapter 132 may be integrally formed.

The temperature control chuck 131 is a temperature controllable plate and includes a channel 131a through which a temperature control fluid (a cooling fluid or a heating fluid) can flow, and serves to cool the sample 10 .

Generally, a cooling fluid flows in the flow path 131a to cool the sample 10, but a heating fluid may flow to heat the sample 10 to a predetermined deposition temperature in an initial stage of deposition.

That is, the temperature control chuck 131 may function as a cooling chuck or a heating chuck.

Further, the sample adapter 132 is stacked on the temperature control chuck 131, and the sample 10 is attached to the film 20 on the upper surface thereof.

The sample adapter 132 transfers the heat of the sample 10 to the temperature control chuck 131 or provides the heat of the temperature control chuck 131 to the sample 10. [

That is, the sample adapter 132 is a predetermined heat transfer medium that allows the sample 10 to be cooled or heated.

In addition, the sample adapter 132 is preferably attached on the temperature control chuck 131 and fixedly stacked, but it can be lifted without being attached when the position can be stably maintained.

3, the upper surface of the sample adapter 132 is formed of a curved surface having a predetermined curvature R. As shown in FIG.

Here, the curved surface is defined as a concept including at least a curved surface. For example, the longitudinal cross-section of the sample adapter 132 may have a rounded top surface with the top two corners of the rectangle, with only the top edges of the sample adapter 120 having a partially curved surface .

Also, the upper surface of the sample adapter 132 may be a surface including a bent line. For example, the sample adapter 132 may have a triangular or trapezoidal longitudinal cross section with a predetermined bent line (edge) It can be a polygonal surface.

However, in order to maximize the adhesion, the upper surface of the sample adapter 132 is preferably curved.

4, the upper surface 132a of the sample adapter 132 may have a rectangular shape, and the upper surface 132b may have a circular shape as shown in FIG.

Although not shown, the upper surface of the sample adapter 132 can be formed into a polygonal, triangular, or polygonal shape with rounded corners.

However, the upper surface of the sample adapter 132 should have a predetermined curvature regardless of the top surface shape.

The upper surface of the sample adapter 132 may be a cylindrical surface cut in a longitudinal direction of the cylinder, or may be a spherical surface in which a predetermined portion of the sphere is cut into a square shape or a circular shape.

The width w1 and the length w2 of the sample adapter 132 should be equal to the width of the film 20 And less than the length.

In other words, the upper surface area of the sample adapter 132 should be smaller than the area of the film 20.

Also, a plurality of grooves (G) may be formed on the upper surface of the sample adapter 132.

In addition, the grooves G are connected to each other and connected to each other as a groove having a predetermined depth on the upper surface of the sample adapter 132, and may be formed in a lattice pattern as shown in FIGS. 2 to 5.

However, the shape of the grooves G is not particularly limited, and it is sufficient that the grooves G are uniformly distributed over the entire upper surface of the sample adapter 132 and are in communication with each other.

In addition, the grooves G may be formed on the upper surface of the sample adapter 132 by venting the air inside the groove when the film 20 is attached to the upper surface of the sample adapter 132. [ So that it can be closely contacted.

Also, although not shown, an exhaust line for exhausting the air of the grooves G may be formed in the sample adapter 132.

That is, the sample holder 130 can precisely adjust the temperature of the sample 10 by closely adhering the sample 10 as closely as possible, thereby allowing a uniform coating layer to be deposited on the sample 10.

In addition, although not shown, a buffer pad for closely contacting the film 20 may be further provided on the upper surface of the sample adapter 132.

In addition, the buffer pad may serve as an insulating layer for insulating the sample 10 and the sample adapter 132 from each other, and may be, for example, a silicon pad.

The inner shield 140 is positioned between the cathode 120 and the sample holder 130 inside the vacuum chamber 110.

In addition, the inner shield 140 interrupts a part of the area between the cathode 120 and the sample holder 130, and restricts the scattering region of the evaporation material scattered by the cathode 120.

FIG. 7 is a top view of the inner shield 140, and FIG. 8 is a bottom view of the inner shield 140. FIG.

The inner shield 140 is installed in the vacuum chamber 110 in a transverse direction between the cathode 120 and the sample holder 130 as a plate.

Also, the inner shield 140 can move up and down toward the sample holder 130.

For example, the inner shield 140 can move up and down along guide rails provided on the inner wall of the vacuum chamber 110.

An opening region 140a is opened in the center of the inner shield 140 and a covering region 14a is formed around the opening region 140a to prevent the evaporation material from falling downward Located.

That is, the deposition material scattered by the cathode 120 may fall into the sample 10 through the opening region 140a.

In addition, a weight frame 141 is provided on a lower surface of the inner shield 140 at a position surrounding the edge of the opening 140a.

The weight 141 is separated from the inner shield 140 and is provided on the bottom surface of the inner shield 140 with an insertion hole c which is a space having a predetermined depth along the edge of the opening 140a .

1, the weight 141 is movable up and down in the insertion port c, and the latch b protrudes outward from the upper end of the weight 141, c are engaged with each other so that the weight 141 is not released to the lower side of the inner shield 140.

That is, when the weight 141 is pressed downward, the weight 141 is pushed into the insertion port c, and when the weight is released, the weight falls down and protrudes due to its own weight.

In addition, the weight 141 is manufactured in correspondence with the shape and size of the support frame 30 that supports the film 20.

That is, when the inner shield 140 is lowered or the sample holder 130 is raised, the entire lower surface of the weight 141 is brought into contact with the entire upper surface of the support frame 30.

When the inner shield 140 is lowered or the sample holder 130 is lifted while the weight 141 and the support frame 30 are in contact with each other, And the film 20 is pressed and brought into close contact with the upper surface of the sample holder 130.

At this time, the weight 141 is naturally pushed into the insertion port (c) of the support frame (30).

In addition, since the size of the film 120 is limited, a size of the weight 141 is limited. In order to obtain a desired weight with a limited size, a metal having a relatively large specific gravity should be used. In the present invention, .

However, the weight 141 may be made of stainless steel.

8, the weight 141 may be formed as a rectangular frame, and the weight 141 may be formed as a circular or elliptical ring depending on the shape of the support frame 30.

Hereinafter, a process of depositing a coating layer on the sample 10 will be briefly described with reference to FIGS. 9 to 11. FIG.

9, when a film 20 with a sample 10 is placed in the vacuum chamber 110 and is spaced apart from the upper portion of the sample holder 130 by a predetermined distance, The holder 130 is lifted or the film 20 is lowered and the film 20 is placed on the sample holder 130.

At this time, only the lower center of the film 20 is in contact with the upper surface of the sample holder 130, and the film 20 and the sample holder 130 are not in contact with each other.

Next, as shown in FIG. 10, the sample holder 130 rises and the support frame 30 supporting the film 20 and the weight 141 come into contact with each other.

However, the inner shield 140 may be lowered so that the support frame 20 and the weight 141 may contact each other.

The inner space of the vacuum chamber 110 is divided into an evaporation space 110a and an upper space where the cathode 120 is located with respect to the inner shield 140 and the film 30, And a non-deposition space 110b, which is a lower space in which the substrate 110 is located.

That is, since the support frame 30 and the weight 141 are in contact with each other, the evaporation material scattered by the cathode 120 is deposited only on the inner shield 140 and the film 20, And is not introduced into the non-deposition space 110b.

Accordingly, it is possible to prevent the evaporation material from scattering in a space where deposition is not required. This can extend the cleaning cycle for cleaning the inside of the vacuum chamber 110, thereby improving the yield by increasing the operating rate.

11, the inner shield 140 may be lowered or the sample holder 130 may be lifted so that the weight 141 may provide its own weight to the support frame 30. At this time, The edge of the film 10 is pressed toward the sample holder 130 so that the film 10 is brought into close contact with the entire upper surface of the sample holder 130.

Next, a power source is applied to the cathode 120 and a deposition material P is scattered and deposited on the sample 10, thereby forming a coating layer on the outer surface of the sample 10.

Therefore, according to the deposition chamber apparatus 100 of the present invention, since the sample 10 can be closely adhered to the sample holder 130 as much as possible and the temperature can be precisely controlled, the deposition quality can be improved.

According to the deposition chamber apparatus 100 of the present invention, since the film 20 is pressed only by the weight of the weight 141 without a separate driving device, the structure is simple and the film 20 is less likely to be deformed or damaged .

According to the deposition chamber device 100 of the present invention, the inner space of the vacuum chamber 110 is divided into the deposition space 110a and the non-deposition space 110b by the contact between the weight 141 and the film 20, It is possible to extend the cleaning cycle by minimizing deposition of the deposition material on unnecessary portions.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, Various changes and modifications will be possible.

100: Deposition chamber device 110: Vacuum chamber
120: cathode 130: sample holder
131: Temperature control chuck 132: Sample adapter
140: inner shield 141: weight weight

Claims (20)

A vacuum chamber;
A cathode disposed within the vacuum chamber to scatter the evaporation material;
A sample holder placed inside the vacuum chamber so as to face the cathode, the sample being an object to be vapor deposited; And
An inner shield located between the sample holder and the cathode in the vacuum chamber and blocking an area of a region between the cathode and the sample holder to restrict a region in which the evaporation material scatters to the sample; Including,
The sample is attached to the film and placed on the sample holder,
A weight is further provided under the edge of the opening area of the inner shield,
Wherein the weight is brought into contact with an upper portion of an edge of the film when the inner shield is lowered or the sample holder is lifted to urge the film toward the sample holder to bring the film into close contact with the upper surface of the sample holder,
Wherein an upper surface area of the sample adapter is smaller than an area of the film and an edge portion of the film to which the weight is further pressed is not in contact with the upper surface of the sample holder, So that the entire upper surface of the sample adapter is covered and adhered.
The method according to claim 1,
Wherein the weight is movable up and down on the inner shield.
3. The method of claim 2,
When the inner shield is lowered or the sample holder is raised to contact the film and further the inner shield is lowered or the sample holder is raised, the weight of the inner shield is lowered by the weight of the inner shield, Wherein the film is inserted into the inner shield to provide a pressure due to its own weight to the film.
The method of claim 3,
Wherein a support frame for supporting the shape of the film is attached to an upper edge of the film and the weight pushes the upper surface of the support frame so that the film is brought into close contact with the sample holder.
The method of claim 3,
The vacuum chamber includes:
Wherein the inner shield and the film are divided into a deposition space which is an upper space and a non-deposition space which is a lower space based on the inner shield and the film when the weight is added to the film.
The method of claim 3,
Characterized in that the weight comprises a circular or elliptical ring or polygonal frame.
The method according to claim 6,
Wherein the weight is made of copper.
The method according to any one of claims 1 to 7,
The sample holder
Temperature control chuck; And
A sample adapter stacked on top of the temperature control chuck and having an upper surface on which a film with the sample attached is placed and which transfers the heat of the sample to the temperature control chuck or transfers the heat of the temperature control chuck to the sample; Wherein the deposition chamber device comprises a deposition chamber.
9. The method of claim 8,
Wherein the temperature control chuck and the sample adapter are integrally formed.
10. The method of claim 9,
Wherein a buffer pad for adhering the film is coated or attached to the upper surface of the sample adapter.
10. The method of claim 9,
Wherein the top surface of the sample adapter is a curved surface.
12. The method of claim 11,
Wherein the upper surface of the sample adapter is a cylindrical surface or a spherical surface.
10. The method of claim 9,
Wherein an upper surface width of the sample adapter is smaller than a width of the film.
delete 10. The method of claim 9,
Wherein a plurality of grooves are formed on an upper surface of the sample adapter.
16. The method of claim 15,
And the grooves are connected to each other to communicate with each other.
16. The method of claim 15,
Wherein the grooves are formed in a lattice shape.
16. The method of claim 15,
Wherein the sample adapter is provided with an exhaust line which, when loaded on the film, exhausts the air of the groove to cause the film to adhere to the upper surface of the sample adapter.
10. The method of claim 9,
Wherein an insulating layer is coated or adhered to an upper surface of the sample adapter.
Wherein the coating layer is deposited on the film by a plurality of deposition chamber devices according to any one of claims 1 to 7.
KR1020160013911A 2015-08-19 2016-02-04 Deposition chamber including inner shield having weight frame KR101778592B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020160013911A KR101778592B1 (en) 2016-02-04 2016-02-04 Deposition chamber including inner shield having weight frame
PCT/KR2016/008782 WO2017030315A1 (en) 2015-08-19 2016-08-10 Sample mount for deposition apparatus, deposition apparatus having said sample mount
TW105126312A TWI623641B (en) 2015-08-19 2016-08-18 Sample holder for vapor deposition device and vapor deposition device having the holder

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Citations (1)

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Publication number Priority date Publication date Assignee Title
JP5651693B2 (en) * 2010-06-23 2015-01-14 株式会社アルバック Substrate holder and film forming apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5651693B2 (en) * 2010-06-23 2015-01-14 株式会社アルバック Substrate holder and film forming apparatus

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