KR101790617B1 - Temperature-controllable sample supporter for deposition apparatus using thermal conductive gas and deposition apparatus having the supporter - Google Patents
Temperature-controllable sample supporter for deposition apparatus using thermal conductive gas and deposition apparatus having the supporter Download PDFInfo
- Publication number
- KR101790617B1 KR101790617B1 KR1020160013912A KR20160013912A KR101790617B1 KR 101790617 B1 KR101790617 B1 KR 101790617B1 KR 1020160013912 A KR1020160013912 A KR 1020160013912A KR 20160013912 A KR20160013912 A KR 20160013912A KR 101790617 B1 KR101790617 B1 KR 101790617B1
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- KR
- South Korea
- Prior art keywords
- sample
- film
- adapter
- sample adapter
- thermally conductive
- Prior art date
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to a sample holder for a deposition apparatus and a deposition apparatus having the sample holder. More specifically, the present invention relates to a deposition apparatus for depositing a sample to be deposited on a sample holder to effectively perform temperature control, The present invention relates to a sample holder for a deposition apparatus capable of high-quality deposition by supplying a thermally conductive gas to an unfused space and facilitating heat exchange between the sample and the sample holder, and a deposition apparatus having the sample holder.
Description
The present invention relates to a sample holder for a deposition apparatus and a deposition apparatus having the sample holder. More specifically, the present invention relates to a deposition apparatus for depositing a sample to be deposited on a sample holder to effectively perform temperature control, The present invention relates to a sample holder for a deposition apparatus capable of high-quality deposition by supplying a thermally conductive gas to an unfused space and facilitating heat exchange between the sample and the sample holder, and a deposition apparatus having the sample holder.
In order to shield electromagnetic interference (EMI) of a sample such as a printed circuit board, a method of attaching a shielding film to the surface of a sample is generally used.
The method of attaching such a shielding film has a problem in that productivity, shielding uniformity, and stability are lowered because the processes such as shape processing, mold production, and fabric attachment are performed by hand, but they are continuously used because they are easy to control the instantaneous production amount .
Recently, researches for conducting electromagnetic wave shielding of samples using a vacuum deposition method such as sputtering have been actively carried out. Electromagnetic wave shielding through vacuum deposition can automate all processes, thereby reducing production cost and achieving uniform thin film deposition It has attracted attention because of its advantages.
On the other hand, the present applicant has found that, in order to perform electromagnetic shielding of a sample using a vacuum deposition method, a sample is attached to a temperature control chuck (generally a cooling chuck) and then fixed in a vacuum chamber Layer (in-line type) deposition. However, such a vacuum deposition method is not known to the applicant in the conventional method.
Further, the sample is adhered to the temperature control chuck by using an adhesive film.
At this time, it is important that the adhesive film is adhered to the temperature control chuck so as to adhere to the temperature control chuck. However, it is difficult to closely adhere the film to the temperature control chuck as a whole.
In addition, since the adhesive film causes thermal deformation due to an increase in the internal temperature of the vacuum chamber, the sample is not brought into close contact with the temperature control chuck, thereby lowering the temperature control effect of the sample.
If the temperature control effect is so low that the temperature of the sample is not controlled, there is a problem that the electromagnetic wave shielding layer is unevenly deposited or the sample is damaged by heat.
SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and it is an object of the present invention to provide a sample holder capable of improving the temperature control efficiency of a sample by closely adhering a sample to the sample holder and a deposition apparatus having the sample holder.
Another object of the present invention is to provide a sample holder and a sample holder which can easily control the temperature of the sample by improving the thermal conduction efficiency even if there is a space partially not in close contact between the film for sample attachment and the sample holder, And to provide a deposition apparatus having such a deposition apparatus.
It is still another object of the present invention to provide a sample holder capable of uniformly controlling the temperature of all the samples attached on the film and a deposition apparatus having the sample holder.
According to an aspect of the present invention, there is provided a sample holder for holding a sample, which is an object to be deposited, in a vacuum chamber, comprising: a temperature controllable chuck; And a sample adapter stacked on top of the temperature control chuck and having an upper surface on which a film with the sample attached is placed and which transfers the heat of the sample to the temperature control chuck or transfers the heat of the temperature control chuck to the sample, Wherein the sample adapter receives a thermally conductive gas from outside (hereinafter, referred to as 'thermally conductive gas'), and a thermally conductive gas line for discharging the thermally conductive gas onto the upper surface of the temperature control chuck is embedded.
In a preferred embodiment, a plurality of gas discharge holes through which the thermally conductive gas is discharged are pierced on the sample adapter, and the gas discharge holes communicate with the thermally conductive gas line.
In a preferred embodiment, the thermally conductive gas is discharged into a bubble region occurring between the upper surface of the sample adapter and the film to perform heat exchange between the sample and the sample adapter.
In a preferred embodiment, the thermally conductive gas is discharged to the entire area between the upper surface of the sample adapter and the film to form a predetermined thermally conductive gas layer so that the film is spaced a predetermined distance from the sample adapter, And the sample adapter.
In a preferred embodiment, the temperature control chuck and the sample adapter are integrally formed.
In a preferred embodiment, a buffer pad for close contact of the film is coated or attached to the upper surface of the sample adapter.
In a preferred embodiment, the upper surface of the sample adapter comprises a cylindrical surface or a spherical surface.
In a preferred embodiment, the top surface width of the sample adapter is smaller than the width of the film.
In a preferred embodiment, the top surface area of the sample adapter is smaller than the area of the film.
In a preferred embodiment, a plurality of grooves are formed on the upper surface of the sample adapter.
In a preferred embodiment, the grooves are connected to one another.
In a preferred embodiment, the grooves are formed in a lattice shape.
In a preferred embodiment, the sample adapter is provided with an exhaust line which, when loaded on the film, exhausts the air of the groove to cause the film to adhere to the upper surface of the sample adapter.
In a preferred embodiment, an insulating layer is coated or attached to the top surface of the sample adapter.
In a preferred embodiment, the film is attached to the top edge of the film, and when the film is placed on the sample adapter, the edge portion of the film that does not contact the sample adapter is pressed downward, And a pressing block for bringing the pressing surface into close contact with the upper surface.
In a preferred embodiment, the press block comprises a metal frame attached along the top edge of the film.
The present invention also provides a vacuum chamber comprising: a vacuum chamber; And a sample holder for holding a sample, which is an object to be deposited, on the upper surface inside the vacuum chamber.
The present invention has the following excellent effects.
According to the sample holder of the present invention and the deposition apparatus having the sample holder, even if a bubble region that is not partially in contact with the film occurs, the thermal conduction gas for thermal conduction is supplied to the bubble region to increase the heat conduction efficiency The temperature control efficiency of the sample can be improved.
Further, according to the deposition apparatus of the present invention and the deposition apparatus having the sample deposition bed, a thermal conduction gas layer is formed between the film and the sample adapter so that the temperature of all the samples on the film can be controlled to be as uniform as possible, There is an effect that can be.
In addition, according to the sample holder of the present invention and the deposition apparatus having the sample holder, the upper surface of the sample adapter to which the film is adhered is curved so as to maximize adhesion between the film and the sample holder.
In addition, since the sample holder and the deposition apparatus having the sample holder of the present invention can maintain the insulation between the sample and the sample adapter, there is an advantage that the electrical damage to the sample can be prevented from occurring during the electromagnetic wave shielding deposition.
1 is a view for explaining a sample holder according to an embodiment of the present invention;
2 is a view for explaining a sample attached to a sample holder according to an embodiment of the present invention,
3 is a view showing another example of a sample holder according to an embodiment of the present invention;
4 is a view for explaining a groove of a sample holder according to an embodiment of the present invention,
5 is a view for explaining a top surface of a sample holder according to an embodiment of the present invention,
6 is a view showing another example of a top surface of a sample holder according to an embodiment of the present invention,
7 is a view for explaining a thermally conductive gas layer of a sample holder according to an embodiment of the present invention.
Although the terms used in the present invention have been selected as general terms that are widely used at present, there are some terms selected arbitrarily by the applicant in a specific case. In this case, the meaning described or used in the detailed description part of the invention The meaning must be grasped.
Hereinafter, the technical structure of the present invention will be described in detail with reference to preferred embodiments shown in the accompanying drawings.
However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Like reference numerals designate like elements throughout the specification.
FIG. 1 shows a sample holder according to an embodiment of the present invention. A
In addition, the
In addition, the
In addition, the
In other words, the
In addition, there is no particular restriction on the type of the deposition, but the effect can be maximized when the electromagnetic wave shielding deposition has a relatively large heat generation.
In addition, although not shown, a sputtering target or an electrode for plasma formation may be provided in the
That is, the
In addition, the
In addition, the
The
The
Generally, a cooling fluid flows in the
That is, the
The
1, the
The
That is, the
3, the
Here, the curved surface is defined as a concept including at least a curved surface. For example, the longitudinal cross-section of the
In addition, the upper surface of the
However, in order to maximize the adhesion, the upper surface of the
5, the
However, the upper surface of the
As shown in FIG. 3, the upper surface of the
In addition, the upper surface of the
In other words, the cross section of the
2, the
Also, a plurality of
The
Further, the
3, the upper surface of the
In other words, the upper surface area of the
A plurality of connection
The connecting line exposed
The present invention is also characterized in that when the
Also, the
However, as shown in FIG. 3, the
However, when the
Further, it is preferable that the vertical cross section of the
The
Referring to FIG. 4, a plurality of grooves (G) may be formed on the upper surface of the
In addition, the grooves G may be formed in a lattice pattern as shown in FIG. 4 by being connected to and communicating with each other as a groove having a predetermined depth on the upper surface of the
However, the shape of the grooves G is not particularly limited, and it is sufficient that the grooves G are uniformly distributed over the entire upper surface of the
In addition, the grooves G may be formed on the upper surface of the
Also, although not shown, an exhaust line for exhausting the air of the grooves G may be formed in the
In addition, although not shown, an insulating layer may be provided on the upper surface of the
The insulating layer is formed on the upper surface of the
In addition, the insulating layer may be coated on the upper surface of the
That is, when the electromagnetic interference shielding process is performed, the insulating layer is insulated from the
Further, although not shown, a buffer pad for closely contacting the film may be further provided on the upper surface of the
The buffer pad may also function as the insulating layer, and may be, for example, a silicon pad.
1, the
The thermally
The
The thermally conductive gas c is filled in the bubble region b generated due to partial adherence failure between the
That is, the thermally conductive gas (c) may perform a function of a cooling gas for removing the heat of the
Also, the thermally conductive gas (c) is preferably provided as an inert gas that does not affect the deposition process, and may be, for example, argon gas.
Therefore, even if adherence failure occurs between the
In addition, the
This is so that the heat of all the
Therefore, according to the sample holder of the present invention and the deposition apparatus having the sample holder, the temperature of all the
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, Various changes and modifications will be possible.
10: Sample 20: Film
30: Press block 100: Sample holder
110: Temperature control chuck 120: Sample adapter
130: heat conduction gas line 131: main line
132: branch line 200: vacuum chamber
210: thermally conductive gas supply line 300: thermally conductive gas supply device
Claims (17)
Temperature control chuck; And
A sample adapter stacked on top of the temperature control chuck and having an upper surface on which a film with the sample attached is placed and which transfers the heat of the sample to the temperature control chuck or transfers the heat of the temperature control chuck to the sample; Lt; / RTI >
The sample adapter receives a thermally conductive gas (hereinafter, referred to as "thermally conductive gas") from the outside, and a thermally conductive gas line for discharging the thermally conductive gas onto the upper surface of the temperature-
Wherein an upper surface width of the sample adapter is smaller than a width of the film,
A pressing portion that is attached to a top edge of the film and presses down the edge portion of the film that does not contact the sample adapter when the film is loaded on the sample adapter so that the film is in close contact with the top surface of the sample adapter ≪ RTI ID = 0.0 > block < / RTI >
Wherein a plurality of gas discharge holes through which the thermally conductive gas is discharged are pierced on the sample adapter, and the gas discharge holes communicate with the thermally conductive gas line.
Wherein the thermally conductive gas is discharged to a bubble region occurring between the upper surface of the sample adapter and the film to perform heat exchange between the sample and the sample adapter.
Wherein the thermally conductive gas is ejected to the entire area between the upper surface of the sample adapter and the film to form a predetermined thermally conductive gas layer such that the film is spaced a predetermined distance from the sample adapter and the thermally conductive gas layer is heat exchanged between the sample and the sample adapter Of the sample holder.
Wherein the temperature adjusting chuck and the sample adapter are integrally formed.
Wherein a buffer pad for adhering the film is coated or attached to the upper surface of the sample adapter.
Wherein the upper surface of the sample adapter is a cylindrical surface or a spherical surface.
Wherein the upper surface area of the sample adapter is smaller than the area of the film.
And a plurality of grooves are formed on an upper surface of the sample adapter.
And the grooves are connected to each other to communicate with each other.
Wherein the grooves are formed in a lattice shape.
Wherein the sample adapter is provided with an exhaust line for exhausting the air of the groove when the film is loaded on the film, so that the film is brought into close contact with the upper surface of the sample adapter.
Wherein an insulating layer is coated or adhered to the upper surface of the sample adapter.
Wherein the pressing block is a metal frame attached along a top edge of the film.
The deposition apparatus according to any one of claims 1 to 7, 9 to 14, and 16, which is provided inside the vacuum chamber and can mount a sample as an object to be deposited on an upper surface.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160013912A KR101790617B1 (en) | 2016-02-04 | 2016-02-04 | Temperature-controllable sample supporter for deposition apparatus using thermal conductive gas and deposition apparatus having the supporter |
| PCT/KR2016/008782 WO2017030315A1 (en) | 2015-08-19 | 2016-08-10 | Sample mount for deposition apparatus, deposition apparatus having said sample mount |
| TW105126312A TWI623641B (en) | 2015-08-19 | 2016-08-18 | Sample holder for vapor deposition device and vapor deposition device having the holder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160013912A KR101790617B1 (en) | 2016-02-04 | 2016-02-04 | Temperature-controllable sample supporter for deposition apparatus using thermal conductive gas and deposition apparatus having the supporter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170092797A KR20170092797A (en) | 2017-08-14 |
| KR101790617B1 true KR101790617B1 (en) | 2017-10-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020160013912A KR101790617B1 (en) | 2015-08-19 | 2016-02-04 | Temperature-controllable sample supporter for deposition apparatus using thermal conductive gas and deposition apparatus having the supporter |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101790617B1 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100810801B1 (en) | 2005-06-06 | 2008-03-06 | 동경 엘렉트론 주식회사 | Substrate supporting unit, and substrate temperature control apparatus and method |
| JP4578701B2 (en) * | 2001-02-26 | 2010-11-10 | キヤノンアネルバ株式会社 | Substrate processing method |
-
2016
- 2016-02-04 KR KR1020160013912A patent/KR101790617B1/en active IP Right Grant
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4578701B2 (en) * | 2001-02-26 | 2010-11-10 | キヤノンアネルバ株式会社 | Substrate processing method |
| KR100810801B1 (en) | 2005-06-06 | 2008-03-06 | 동경 엘렉트론 주식회사 | Substrate supporting unit, and substrate temperature control apparatus and method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170092797A (en) | 2017-08-14 |
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