TW201214778A - Substrate for installing semiconductor light emitting component and semiconductor light emitting device using the same - Google Patents

Abstract

The invention provides a substrate for installing a semiconductor light emitting component, which is anti-vulcanized and ensures high reflectance, and the semiconductor light emitting device using the same. The substrate for installing a semiconductor light emitting component includes a substrate (2) comprising a metal portion; and an aluminum reflection layer (4), whose thickness is above 0.02 μm and below 5 μm, disposed at the side of the substrate (2) on which the semiconductor light emitting component is installed.

Description

201214778 VI. Description of the Invention: Technical Field of the Invention The present invention relates to a substrate for a semiconductor light-emitting element wire and a semiconductor light-emitting device for a substrate. [Prior Art] Generally, a light emitting diode (LED: Light Emitting Diode) or a laser diode (LD: Laser semiconductor light emitting device is a metal substrate represented by copper, or a metal resin complex: two materials) A structure in which an LED wafer or an LD wafer is mounted and the core of the LED wafer or the LD wafer and the substrate is surrounded by an outer cladding such as a mold resin. The portion exposed from the outer covering of the substrate becomes The external terminal 'the other end of the external terminal is inside the outer casing, for example electrically connected to the LED chip or the LD wafer by means of a bonding wire. 半导体 The semiconductor light-emitting device thus known has the following structure: in order to be a wafer or a (7) wafer The generated light is efficiently emitted to the outside, and a ship layer having a high light reflectance is formed on the surface of the substrate on which the (iv) wafer or the LD wafer is mounted, and light reflected to the back (substrate) side of the LED wafer or the LD wafer is reflected. To the emitting side (Patent Document υ, in addition, it is known that the outer covering body is formed with an opening portion having a so-called top bevel surface which is away from the LED chip or the LD wafer as it moves away from the substrate around the LED wafer or wafer. A metal layer selected from the group consisting of silver, silver, and silver having a high light reflectance is formed on the inclined surface, and the hybrid LED chip or the LD wafer is incident on the exit of the side light toward the opening, and the reflection is performed. The resin layer having a high gas barrier property is coated to prevent the air-conditioner body such as a vulcanized gas from being reacted by the human hair to be blackened and reduced in reverse (Patent Document 2). [Prior Art Document] [Patent Document 1] JP-A-2007-149823 [Patent Document 2] Japanese Patent Laid-Open No. 2〇1〇_1〇279 [Explanation] [Problems to be Solved by the Invention] & Patent Document 1 _ semi-conductive wire towel, as The resin used for the outsourcing is such that the gas in the atmosphere such as deuterated hydrogen penetrates, and the gas reacts with the silver plating layer to cause vulcanization or the like to be blackened, and 201214778 has a problem that the reflectance of the layer is sharply lowered. Patent Document 2 The semiconductor light-emitting device described discloses a method for solving the problem of Patent Document 1, but as described in the exclusive article 2, "the heat resistance of the material of the outer-shelf body is present, and there is a limit." Dedicated to the 1st issue of its financial method , turned over the surface of the ship to form a thin organic protective film to prevent vulcanization. However, there is a stable wire bonding before the wire bonding (* bGnding) (4). A problem of the effect of suppressing vulcanization. An object of the present invention is to provide a substrate for mounting a semiconductor light-emitting device which can be unvulcanized and which ensures high reflectance. Another object of the present invention is to provide a semiconductor light-emitting device which can be unvulcanized and which ensures high reflectance. Other objects of the present invention will be apparent from the description of the embodiments and the examples. [Means for Solving the Problem] μ The first aspect of the present invention provides a semiconductor light-emitting device mounting substrate and a material conductor for the purpose of achieving the above object. The component wire plate includes: a button, the money is formed of a metal portion, and a reflective layer having a thickness of 0·02 μm or more and 5 μm u, and is provided on a surface side of the substrate on which the semiconductor light emitting element is mounted. - The second aspect of the present invention is a semiconductor light-emitting device mounting substrate for providing a semiconductor light-emitting device mounting substrate. The semiconductor light-emitting device has a metal substrate; a silver layer or a silver alloy layer. The thickness is 〇01 μm or more and 5 μm or less, and the semiconductor light-emitting device is mounted on the substrate; and the light-reducing layer is thicker than 6 μm or more and is provided on the silver layer or the silver alloy layer. According to a third aspect of the present invention, in order to achieve the object of the present invention, there is provided a semiconductor light-emitting device comprising: the above-mentioned vocal light brittle plate; semiconductor light-emitting reading; The light-emitting element is disposed on the substrate; the outer package portion surrounding the semiconductor light-emitting read-write (four) substrate has a portion _ surrounding the conductive light-emitting element, and the inclined surface or the vertical surface is formed by _ The semiconductor light-emitting element mounting base (4) is different from the semiconductor light-emitting element; and the through-tree transition is filled in a recess of the outer package portion to seal the semiconductor light-emitting element. [Effects of the Invention] According to the present invention, since the substrate table is a thief rider, the track can be a semiconductor light-emitting element wire 导体 conductor light-emitting device having a high and stable reflection for a long period of time. This is the reflectivity of _ in the ultraviolet " silver and =^ base 2 & ultraviolet light has a near-silver reflectance' in gold, the color is well balanced, with only - human-to-silver positive reflectivity, and Compared with silver, it has the characteristics of resistance to chemical vulcanization. _Easy to make an embodiment [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the respective drawings, constituent elements that have substantially the same function are denoted by the same ship, and the repeated description thereof will be omitted. (First to Tenth Embodiments) An embodiment of a semiconductor light-emitting device mounting substrate and a semiconductor light-emitting device according to the present invention is an embodiment in which a substrate and an aluminum reflective layer are used to form a substrate for mounting a semiconductor light-emitting device, and the substrate is used for A semi-laid light-emitting element is mounted and formed of a fine steel alloy or an aged alloy; the insole reflective layer 63a is at least a portion of a surface on which the semiconductor light-emitting element is mounted on the substrate. The present invention is characterized in that it comprises a substrate made of at least a metal on which a semiconductor light-emitting device is mounted, and an aluminum reflective layer provided on at least a part of a surface of the substrate on which the semiconductor light-emitting element is mounted. The metal as the substrate is preferably a substrate composed of steel or a steel alloy from the viewpoint of electric resistance and thermal resistance. Further, as the metal of the substrate sheet, an iron-nickel alloy such as a 42 alloy or an iron-based frame material can be used. Further, the substrate may contain a metal portion. For example, a copper clad laminate in which copper is bonded to a resin can be used as the substrate. At this time, the resin is formed on the surface of the substrate opposite to the surface on which the aluminum reflective layer is formed. Further, the surface of the substrate on the opposite side to the surface on which the surface of the inscription layer is formed may be one which contains a composite material with a machine material or an inorganic material. [First Embodiment] Fig. 1 is a schematic view showing a semiconductor light-emitting device mounting substrate according to a first embodiment of the present invention, wherein reference numeral 2 denotes a substrate, and reference numeral 4 denotes a semiconductor light-emitting device mounted on one surface of the substrate 2. The reflective layer formed in the region of the place constitutes a substrate for mounting a semiconductor light-emitting element. 5 201214778 Substrate 2 is composed of a composite of metal or metal and organic or inorganic materials. The metal material is not limited thereto, but the most versatile substrate is a metal lead frame made of copper or a copper alloy (lead framed uses a copper plate as the substrate 2), and the thickness thereof is not limited, and the cost can be referred to. In addition, in consideration of mass production, a hoop material of a copper plate is preferable, but a short-sized sheet and various materials may be used. When a composite material is used as the substrate 2, a resin material may be used. A copper clad laminate (COpper_cladboard) and a laminate of the copper clad laminate are attached. As the resin, a hard plate-shaped resin or a thin resin having flexibility can be used. As a representative resin, glass is exemplified. Epoxy resin substrate (glass cloth substrate resin plate), polyimide resin system, etc. The method for producing the light-reducing layer 4 is by batch processing or continuous using a vapor deposition device having a pressure reducing pressure regulating function. The thickness of the aluminum reflective layer 4 is preferably 〇·〇2μηι or more from the viewpoint of reflectance. When a copper plate is used as the substrate 2, for example, the length is i〇〇. m, a width of 5 mm, and a thickness of 0.2 mm. The thickness of the reflective layer 4 is, for example, 〇·〇5μηι. At the time of manufacture, first, a copper plate of the above-described size is prepared as the substrate 2. Next, a resistance-heated cylinder is used. The vacuum evaporation apparatus of the type forms the aluminum reflective layer 4. Specifically, the substrate 2 is cut into a short-sized material of 5 mm mm 5 5 mm, and 16 pieces of the cut substrate are radially arranged at a radius of 3 〇〇. On the umbrella-shaped jig of mm, three sets are placed on the cylinder, and a resistance heating source (output power lkw) is used as the evaporation source of the name. The exhaust gas is 2xl (^Pa,厚厚麟(10)一_Reflective layer 4. As a steam source of aluminum, an electron beam method can be used in the load lock method, and graphite crucible can be used. In the present embodiment, the vacuum vapor deposition apparatus uses a self-made machine, but a commercially available vapor deposition apparatus such as a vapor deposition machine using a load lock method has no problem. It can also be a continuous steaming that can evaporate the hoop material. The vacuum vapor deposition apparatus may be appropriately selected in consideration of film quality, productivity, etc. Further, the aluminum reflection layer 4 may be formed by a vapor deposition method. That is, an ion plating method, a sputtering method, or a metal coating method may be used. The film thickness of the aluminum reflective layer 4 is measured by secondary ion mass spectrometry (SMS: Sec〇ndafy I〇n Mass Spectrometiy). The thickness of the aluminum reflective layer is from the surface to the aluminum reflective layer. The main constituent element of the underlying layer has a thickness up to 1/2 of the maximum intensity of the underlying layer. When the substrate 2 is steel, the signal intensity of copper is used. (In the embodiment of the present embodiment) Evaluation) 201214778 For the reflective layer 4, the vulcanization characteristics and reflectance are determined as follows. First, as shown in Table 1, the above-described method was used to produce a reflective layer having a varying thickness, and the initial reflectance at a wavelength of 460 nm was measured. At this wavelength, the reflectance of barium sulfate is taken as 100%, the reflectance is 90% or more as particularly good (indicated by ◦), and less than 90% is represented as difference (indicated by X). When the aluminum is very thin, that is, when the thickness is 〇 〇 1 μm or less, the reflectance of the metal of the base (in this case, steel) is affected, and the reflectance is lowered. Next, for the vulcanization characteristics, 3 ppm of HsS (hydrogen sulfide) was sprayed for 96 hours at a gas ambient temperature of 40 ° C 'humidity 80% for the sample in which the aluminum reflective layer 4 of each thickness was formed (according to the industrial standard H8502). The test resistance to vulcanization of the corrosion resistance test method for electroplating is the ratio of the initial reflectance to the reflectance after 96 hours of vulcanization. In the case of a contact layer, there is no case where the initial reflectance is reduced to less than 90%. As described above, it is possible to confirm the characteristics required for mounting the substrate as a semiconductor light-emitting element, and the initial reflectance and the vulcanization property (that is, the anti-scale which is tested in an environment capable of being vulcanized) are good, and the thickness of the reduction is (10) 2 μm. In the above case, as a comparative example i, it was confirmed that when only a silver layer of 3 μm was provided on the substrate, it was confirmed that the starting material was 93% and was good. However, the reflectance after the _ test was obtained. 29%, a large drop, and poor vulcanization characteristics. Compared with Example 2, only Wei is set to 7μιη on the substrate, and the layer (0.05μηι) is recognized as the peak. Although the vulcanization resistance is good, the initial Low reflectivity 63% for X. According to the embodiment, since the surface of the substrate is opened to have a reflective layer, the household can be used to obtain an unfluorinated, long-twisted, high-yield, reflective, and reflective substrate. Set. This is _ the following special Ming Ming is more than 3 times the ultraviolet ΐΐϊ 银 silver, and has a reflectivity close to silver for purple, red, infrared, the color _ good 'has a high reflectance after silver, and Vulcanization is less likely to occur than silver. The raw radiant of the above-mentioned semiconductor illuminating wire is bonded by the Anxian substrate, and the argon electric paddle is carried out: there is no second line. The vulcanization test was performed on the substrate for mounting a half-light-emitting element, and the film was observed to have a lower surface resistance (the difference in resistance to the surface =:=, but it can also be described in the later-described embodiment). (2nd Embodiment) FIG. 2 is a schematic cross-sectional view showing a semiconductor light-emitting device according to a second embodiment of the present invention, and shows a semiconductor light-emitting device using the semiconductor light-emitting element mounting substrate shown in Fig. 1. In the semiconductor light-emitting device, two groups (2A and 4A, 2B) are used in the semiconductor light-emitting device, and the symbol "2" is a substrate, and 4 is an aluminum reflective layer formed on one surface of the substrate 2. 4B) is used in close proximity to the configuration. Symbol 6 is a semiconductor light-emitting element mounted on the aluminum reflective layer 4A; reference numeral 7 is a bonding wire electrically connecting the semiconductor light-emitting element 6 and the aluminum reflective layer 4B; An outer cladding portion made of resin, the outer cladding portion enclosing a side close to the substrate 2A, 2B not including the semiconductor light emitting element 6, and having a concave portion formed by the inclined surface and the aluminum reflective layers 4A, 4B located at the bottom surface, The inclined surface is away from the semiconductor light emitting element as it is away from the substrate around the semiconductor light emitting element; the reference numeral 9 is a light transmissive resin portion that fills the concave portion of the outer covering portion 8 and seals the semiconductor light emitting element, and constitutes a part of the outer covering body. The phosphor material can be mixed in symbol 9. For example, 'by mixing yttrium aluminum garnet (YAG: Yftrium)

Garnet et al., LED chips can be used for quasi-white LED devices using 460 nm GaN-based LEDs. The aluminum reflective layer 4 may be formed on substantially the entire side of the inner side of the outer package or a portion of the remaining portion. The reason for this is that light emitted from the light-emitting element can be reflected in the outer cladding portion. As a specific method, (1) a film forming apparatus at the time of forming an aluminum reflective layer is provided with a function of shielding the outer covering region; (2) after forming an aluminum reflective layer over the entire surface, the outer covering portion is passed through the film ( Any of these methods, such as masking, or photolithography, and then etching to remove aluminum, may be used. According to the semiconductor light-emitting device having the side structure, the light emitted from the semiconductor light-emitting element 6 is reflected by the insole layer 4A, 4B to the concave portion through the presence of the insole reflective layers 4A, 4B located on the bottom surface of the concave portion formed in the outer package portion 8. The opening side exerts an effect of increasing the amount of light from the semiconductor light-emitting device. As mentioned above, Ming has good resistance to vulcanization, so it can maintain high reflectance for a long time. [THIRD EMBODIMENT] Fig. 3 is a schematic cross-sectional view showing a semiconductor light-emitting device Anga substrate of the third solid-state type of the present invention, which is characterized in that it is a layer of a wet layer of a nickel-plated layer on a New Zealand surface. 18. Gold _ layer 1 〇 'In the portion of the gold layer _ layer 1 () on the surface of the substrate 2 forms the inscription layer 4. One of the reasons for sequentially forming the recording layer 17, the surface layer 18, and the gold flash plating layer 1 on the substrate 2 is to ensure the solder wetting 201214778 property between the substrate 2 and the printed circuit board on which the semiconductor light-emitting device is mounted, that is, in order to achieve Improved solder adhesion. In this case, the thickness of the nickel layer 17 may be 〇 4 to 1·5 μηι, the thickness of the palladium layer 18 may be 〇 〇 1 to 〇 2 μιη, and the thickness of the gold flash plating layer 1 可以 may be 〇 or less. These thicknesses are thicknesses which the inventors have confirmed the effect, but may be slightly entangled depending on the components to be mounted. The thickness of the light-reducing layer 4 is preferably 〇〇2 μm or more and may be about 5 μm, but in the case of the dry plating method, it is preferably 2 μm or less from the viewpoint of flatness (hereinafter). the same). Here, the gold flash plating layer not only covers the entire surface of the underlying layer, but sometimes forms a speckle with respect to the underlying layer. Therefore, the reflective property of the gold flash layer is a mixture of the gold layer and other substrate layers. The method for producing the aluminum reflective layer 4 is carried out by batch processing or continuous treatment using a vapor deposition apparatus having a pressure reducing function. The nickel layer and the palladium layer can be plated by a dry type such as wet plating or vacuum evaporation to obtain the desired quality of the product. The wet plating can be applied to the entire surface of the six faces of the material, and most of them can be produced at low cost. Therefore, the nickel layer and the palladium layer of the present invention are preferably formed by wet plating. Incidentally, the thickness of the underlayer formed by the wet layer method by the recording layer 17, the crucible 18, and the gold flash is calculated by integrating the current value at the time of electroplating. The thickness of the nickel layer 17 can be set to a value of Q 〇 in order to prevent discoloration of the substrate 2 due to oxidation of copper and to improve the processing characteristics by the substrate for mounting a semiconductor light-emitting element. In order to obtain a good solder immersion in a solder mounting element (4) by a portion of the filament layer as its connecting portion, a layer can be provided. The thickness of the layer is usually 〇 〇 3 哗 〇 〇 〇 7 μπι thickness ', but the thickness is determined according to the welding conditions. The effect of the present embodiment is that high reflectance can be ensured by using aluminum as a reflective layer. Further, by using the light-reducing layer 4 having a thickness of G.G2pm or more, in addition to the effect of obtaining good long-term durability and maintaining high reflectance, the following effects can be exhibited. That is, the recording layer 17 having the above numerical value can prevent the diffusion of the main material copper of the substrate 2, and the layer 8 of the above numerical range can be improved by the lead-free soldering of the wire-loaded shaft, and the gold of the upper stitch is surrounded. Flash = 10 can be advanced - step to improve the weldability of the weld and can be used to protect the new effect 4 卩, through the structure of the shape ' can get a suitable structure for welding. [Fourth Embodiment] The fourth embodiment is a cross-sectional view of the greening of the conductor of the fourth embodiment of the invention, and the third embodiment of the conductor light-emitting element Alang substrate, the outer-body portion 8 of the second figure, and 201214778 An embodiment of a semiconductor light-emitting device in which the light-transmitting resin portions 9 are combined. The same portions of the second and third figures are denoted by the same symbols. When a copper plate is used as the base material 2A (2A, 2B), for example, a copper plate having a length of 100 m, a width of 50 mm, and a thickness of 0.2 mm is prepared, and the thickness of the substrate 2A, 2B is sequentially formed by wet plating to a thickness of Ιμηι. A nickel layer 17, a palladium layer 18 having a thickness of Ο. ίμιη, and a gold flash plating layer 10 having a thickness of 〇〇1μηι. Further, 'the aluminum reflective layer 4 (4Α, 4Β) was left on the surface of the gold flash plating layer 1 for soldering the subsequent portion, and the portion used as the reflective film was partially vapor-deposited, and no aluminum was obtained at the solder joint. A layer, a material having an aluminum layer in a portion for reflection. Then, the frame shape for mounting the semiconductor light-emitting device was formed by press and etch, and the two groups (2Α, 々a, 2Β, and 4Β) were placed close to each other on substantially the same surface. Then, a resin-made outer covering portion 8 is formed which surrounds a portion where the base material 2Α, 2Β is close to each other, and has a concave portion for excavating the periphery of the semiconductor light-emitting element 6 in advance. Next, the semiconductor light-emitting device 6 was mounted with a conductive paste, and the surface electrode and the lead frame were joined by gold bonding. Finally, a light-transmissive resin (such as a resin) is filled in the concave portion of the outer covering portion 8 to cover the semiconductor light-emitting element 6, thereby forming a light-transmitting resin portion 9 as one of the outer covering members. In the above description, the semiconductor light-emitting device mounting substrate is produced and then formed into a predetermined shape by a press or etching, but a post-plating method may be used. That is, after the base material 2Α and 2Β are formed into a predetermined shape, each plating layer (1〇, 17, 18) is formed on the substrate by wet plating, and the inscription layer 4 is formed by dry plating such as vacuum distillation. . Further, the case where the base material 2 is eight or two turns and is made of copper is described. However, a base material provided with a copper wire on a resin or the like can be used. Further, other metal substrates such as an iron-based 42 alloy may be used in consideration of use, cost, and the like. Further, it is possible to form a printed circuit board or a flexible wiring board forming step to form a wiring and form an inversion layer 4 (4, 4). In this way, depending on the purpose, structure, and material (copper plate or flexible resin substrate with flexibility), it is possible to change the shape (manufacture by shape such as punching, bending, or bulging), plating, and The order of evaporation. 3 The mounted semiconductor light emitting element 6 can be mounted, for example, GaAs_Si_LED,

LED wafers such as AlGaAsiED, GaP_LED, AlGalnP-LED, InGaN-LED. In addition, the semiconductor light emission shown in FIG. 4 is an element facing the vertical direction with respect to the electrodes of the top surface and the bottom surface, but is not limited thereto, and may be an LED having a planar structure in which the same surface is formed and the counter electrode is formed (for example, ). In the case of a planar structure in which the electrodes are formed on the same surface, the electrode faces are directed toward the surface side (upper side in FIG. 201214778). The cathode and the anode are both wire bonded; the electrode faces are directly connected to the lower side (the lead frame side). In the so-called flip chip mounting method, any mounting method can be used. It is also possible to use copper wire bonding and aluminum wire bonding instead of gold wire bonding. Further, in the "in this embodiment", a substrate to which the gold flash plating layer 10 is applied is used, and in the case of a gold having a relatively large pitch (for example, a case of a pitch of 5 mm), that is, without a high precision, there is no gold flash plating layer 10 Can also get high yield, so it can be omitted. The palladium layer 18 can be omitted as long as the thickness of the metal layer can be ensured and sufficient solder wettability can be obtained. According to the semiconductor light-emitting device of this configuration, similarly to the semiconductor light-emitting device shown in Fig. 2, the semiconductor light-emitting elements 6 are transmitted through the presence of the aluminum reflective layers 4A and 4B located on the bottom surface of the concave portion formed in the outer cladding portion 8. The light is reflected by the reflection layers 4A and 4B to the opening side of the concave portion, and the effect of increasing the amount of light from the semiconductor light-emitting device is exhibited. Further, since the aluminum reflective layers 4a, 4b have good generality, they can be turned upside down for a long time. Further, since the intermediate layer composed of the nickel layer 17, the palladium layer 18, and the gold flash layer 1 存在 exists between the substrates 2A and 2B and the aluminum reflective layers 4A and 4B, it is possible to achieve the installation and the ship-less solder material. Increased invasiveness. [Fifth Embodiment] Fig. 5 is a schematic cross-sectional view showing a fourth substrate of a conductor light-emitting device according to a fifth embodiment of the present invention. This embodiment is a third example of a variation of the positional change of the semiconductor light-emitting broadcast substrate. Fig. 5 (8) shows that only the nickel layer 17, the layer 18 and the gold flash are formed on one surface of the substrate 2, and the layer 10 is in the gold flash. A part of the first layer of the ore layer forms an example of the inscription layer 4; 帛 $ (9) indicates that a part of the gold ore layer formed on the surface of the substrate 2 forms a reflection layer 4, and a part is on the paper surface. An example of bending upward by approximately 90 degrees; Figure 5 (4) shows that the entire surface of the substrate 2 = recording layer π, _ 18 and gold _ layer 1G 'is formed on the entire surface of the formed side plating layer ω An example in which the portion is fed upward (10) degrees on the paper surface. The figure (6) indicates that the subtraction 4 is directly formed on the -2 plane, and the nickel layer 17, 18 and the gold flash layer are formed on the other surface of the substrate 2. 1〇 example. The substrate for mounting a semiconductor light-emitting element shown in Fig. 5 (8) can be configured as follows: a surface 7 is thin, a _17, and a gold flash plating layer 10 having a thickness of a spleen is formed by a surface method. In the case of the flash plating layer 1G, the outline of the method is as follows. On the copper substrate, the secret is accumulated in the order of gold, and the gold is used, except for bribes ^ 201214778 ί. The _reflective layer 4' can not be easily subjected to the vacuum method in the electric body by the wet electric ore method. For other methods, for example, in the method of inert gas, etc., the other parts are simplified from the cost and the process steps. From the viewpoint of consideration, it is possible to use this ^ 5 _ (_ - semi-conducting light tree (4) substrate is sequentially nickel plated 17 on the substrate 2 with a thickness of 1.5 qing, and the thickness of the 轨2 qing layer is formed by a key method. 18, the shape of the drought is 0. 1μιη gold with the layer 1G, and the formation of the subtraction layer 4 in the __ portion is formed. The semiconductor light-emitting element of the $ c is not the substrate is sequentially on the substrate 2 with electricity ore The method forms a thickness of <1.5 for the recording layer 17, and forms a thickness of 0 with the electro-mine method to form a layer of gold, and forms a gold ore layer with a thickness of Ο.ίμηι, and forms a reflective layer 4 on the entire surface. These examples are based on the assumption that the semiconductor hair piece is threaded on the top surface of the sensor 4 and the wire bonding is performed on the bottom surface or the side surface of the substrate 2. More specifically, when the substrate 2 is bent, Applicable structure. It should be noted that in the towel of the present embodiment, the wire bonding is performed on the back surface of the substrate 2, but it is also possible. The semiconductor light-emitting element mounting substrate shown in Fig. 5(d) is the same as the example of Fig. 5, and the nickel layer 17 is placed on the back surface of the recording layer 17, the layer 18, and the gold flash layer. The palladium layer 18 and the gold flash layer 1 〇 are applied only to one side of the substrate 2, so that the amount of use of these metals can be suppressed. When only one side is plated, the two substrates are bonded together to enter the plating step, and then Separation is carried out so that the masking material is not required. The aluminum reflective layer 4 is easily affected by the reflectance of the substrate depending on the thickness as described above, and therefore is preferably 〇〇2 μm or more. Although aluminum reflection is formed on the entire surface. The layer 4 may have a structure in which the aluminum reflective layer 4 is partially formed. After forming the semiconductor light-emitting element mounting substrate shown in Fig. 5(d), the end portion of the substrate (also referred to as a substrate connecting wire) may be used. The outer lead wire is processed into a predetermined shape. For example, the bottom surface of the portion (outer wire) exposed from the outer covering of the substrate is bent to be in contact with the top surface of the printed circuit board and is connected to the substrate. Use this structure. The center portion of the base material is used as the inscription layer, and the bottom surface of the end portion of the base material serves as the outer lead wire, and the surface on the recording and red side is connected to the printed circuit board. [Embodiment 6] FIG. 6 shows the sixth embodiment of the present invention. A schematic cross-sectional view of a semiconductor light-emitting device mounting substrate of the present embodiment. The structure of the embodiment is as follows. On both sides or one surface of the substrate 2, a material selected from the group consisting of (Pd), gold (Au), tin (Sn), and nickel (Ni) is formed. , copper (Cu)-tin (Sn) alloy, copper (Cu)-recorded (Ni) alloy single 12 201214778 metal layer 11 or substrate 2 is formed on the subtractive layer 4. The metal layer 11 is composed of metal other than Ag An example of the first metal layer - but t6 ^ (8) shows an example in which the metal layer u is not formed on both sides of the substrate 2, and a portion of the metal layer u on the surface is formed as the aluminum reflective layer 4. 6_11, J -Asmm, L · Juice Fig. 6 (8) shows that the metal layer is not formed on one side of the substrate 2 on the gold 11 - part forms the inscription layer 4 _ sub; 帛 6 (4) shows that the enamel layer 11 is formed on the substrate surface An example in which the formation layer 4 is formed on the other surface of the substrate 2. That is, (8) to (c) are examples in which the ruthenium metal layer η is exposed on a part of the surface of the semiconductor light-emitting element mounting substrate. The _ has more anti-oxidation wire and has the advantage of matching with the soldering culvert; the tin has the advantage of being easy to weld and has a slight greening disadvantage. Copper-tin alloy is harder to oxidize than steel, and has the advantage of being easy to combine with tin and _. Copper-nickel alloys have the advantage of being easy to combine with. According to the scale, the secrets of the ship can be selected and the manufacturing conditions are selected as the best material for the metal layer 11. [Embodiment 7] Fig. 7 is a schematic cross-sectional view showing a substrate for mounting a seventh-generation rich drunk conductor light-emitting device according to the present invention. This embodiment is characterized in that a layer or a gold ore layer 12 is formed on the money shot layer 4. Fig. 7(8) shows an example in which a portion of the ingot layer 4 is formed to form the gold layer 12; and Fig. 7(b) shows an example in which the layer 12 is formed on the gold layer 1G in the phase of the (4) 4 phase of the partial alkali; Fig. 7(c) shows an example in which the gold plating layer 12 is formed on the entire surface of the aluminum reflective layer 4; and Fig. 7(d) shows the aluminum reflective layer 4 on the aluminum reflective layer 4 and the gold flash layer 1 on which the aluminum reflective layer 4 is formed. In the example of the semiconductor light-emitting device, the semiconductor light-emitting device mounting substrate is used. In these embodiments, the nickel layer 17, the palladium layer 18, and the gold flash plating layer 10' are sequentially formed on the entire surface of the substrate 2, but are not limited thereto, and a single layer of metal is formed as described in the above embodiments. In the case of the layer 11, the case where the aluminum reflective layer 4 is directly formed on the substrate 2 is also applicable. The gold plating layer 12 in the embodiment of the invention can be used for electrical connection of semiconductor light emitting elements mounted on the reflective layer 4. The thicker the gold plating layer, the lower the reflectance on the short wavelength (blue) side, but the better the connectivity of the gold wire. The structure of the gold plating layer 12 may be determined by reference reflectance depending on the application. Incidentally, the respective plating layers (1, 12, 17, and 18) are formed by a wet plating method, and may be formed by other methods. 13 201214778 [Embodiment 8] = The figure is a schematic use state of the eighth embodiment of the invention. In the semiconductor light-emitting device according to the present embodiment, the substrate 丨 is fabricated by using the semiconductor light-emitting elements of the related art, and the substrate is printed as a printed circuit board. A portion (outer wire) extending outwardly from the outer covering portion 8 of the printed circuit board 13' of the printed circuit board mounting substrate , is formed, and a portion la or larger than the bottom surface of the outer covering portion S is formed or The portion lb, le below the bottom surface. This portion is bonded to the wiring of the printed circuit board 13 by the tan material 14. Fig. 8 (8) shows an example portion 1a in which the forming portion is formed by bending the outer wire 90 degrees downward toward the lower side, and then bending it in the opposite direction by 9 degrees toward the water + direction 'unchanged direction of the material wire, and The horizontal position is substantially the same as the bottom surface of the outer casing portion 8 to indicate the formation of a portion lb which is bent 90 degrees twice 'to the outer surface of the outer casing portion 8 Formed; 8th_ is a forming portion le _ sub, which is to ride the outer wire twice along the outer casing portion 8 in the opposite direction to the eighth _, so as to be along the top surface of the outer casing portion 8 form. The f-folding method of the outer conductor is not limited to this, depending on the shape of each of the semiconductor light-emitting devices. [Ninth embodiment] In the present embodiment, the embodiment of the above-described embodiment is similarly the same as the other embodiments. However, the carbon concentration of the reflective layer &1><1〇2〇 Do not be below the claw 3. In order to evaluate the adhesion to the semiconductor light-emitting element mounting substrate, the bonding force is bonded to the bonding wire made of gold. Here, the wire bonding means that the electrode bonding pads on the lead frame side and the electrodes mounted on the components of the s-Hing lead frame are electrically connected, and are connected by gold or the like. The first-joining means that the wires of the wire are formed into a spherical shape by discharge to be previously joined. In the position accuracy and the crimpability, the electrodes on the element side are mostly joined first. In the present embodiment, a portion where the light-reducing layer is provided in the same manner as in the first embodiment is used to bond the tip of the wire to a spherical object (spherical line). ^ One joint means that the electrode on the element side is joined to the electrode on the lead frame side to be connected by the above-mentioned wire. In the actual sealing towel, on the copper substrate, the same embodiment of the fresh i is used, and the portion having the reflective layer is connected to the wire miscellaneous. Table 2 shows the relationship between the carbon concentration in the inscription layer and the bonding strength of the gold wire. As a real example of 201214778, it will be at a thickness of 0. On a 15 mm copper substrate, a nickel layer of 〇·7μηι is formed by wet plating, and a product obtained by 0.05 μm is subjected to press working at a thickness of 〇. An example of a circuit board for a light-emitting device was formed by fixing a 5 nim three-layer glass epoxy resin substrate with a heat-resistant acrylic resin adhesive. This material was attached to the above vacuum vapor deposition apparatus to form an aluminum reflective layer of 0·2 μm, and SIMS analysis was performed. Here, the carbon concentration in the aluminum reflective layer is the minimum concentration of the carbon concentration in the aluminum reflective layer. The carbon concentration in the aluminum reflective layer was 3 x 1 〇 2 () / cm 3 . For the substrate of Example 12, the copper substrate of 70 μm was formed on the entire surface of the polyimide film having a thickness of 125 spleth by wet electric bonding, the recording layer of 〇_7μηι, and the Ιε of 5〇ιτι after 〇·〇5μιτι A plate material formed by bonding a heat-resistant acrylic resin adhesive to a substrate with the obtained product. In the embodiment 12, after the formation of the aluminum reflective layer, in the press working, the wiring member is formed by punching off (as a lead frame) an unnecessary portion. Similarly, the carbon concentration in the aluminum reflective layer of Example 12 was analyzed by sjjyjs. As a result, the carbon concentration in the aluminum reflective layer was lxl〇2〇/cm3. Embodiment 13 is to form a nickel layer of 〇7μηη by wet plating on an iron-containing copper alloy, 0. After the palladium of 05 μηι, only the press working was performed, and the obtained product was fixed in a vacuum vapor deposition apparatus with a stainless steel (SUS304) die clamp to form a 反射 2 gm of a reflective layer. The carbon concentration in the aluminum reflective layer of Example 13 was 3 χΙΟ 19 / cm 3 . As a criterion for evaluation, the first joint strength is a case where the shear strength of G 39N or more is taken as 〇, and will be less than 0. 39 作为 as X. The second joint strength is a case where the shear strength on the crucible is taken as 〇, which will be less than 0. 049 作为 as X. As is clear from Table 2, when the carbon concentration of the aluminum reflective layer is 3 χ 1 〇 2 〇 / cm 3 or more, the bonding strength is lowered, preferably 1 X 102 G / cm 3 or less. It should be noted that in the present embodiment, since the epoxy lining material is additionally used, the carbon concentration is increased, and the bondability is inferior to the other examples. Further, although the bondability is within the range of the impurities, the "reduction layer" carbon concentration also increases when the acrylic-based adhesive organic material is used. When the bonding property is strictly required, the resin is not used as in the case of the first embodiment, and after the substrate for mounting the semiconductor light-emitting device is formed, that is, after the formation of the reflective layer, the resin may be used. In addition, as a source of carbon to the light-reduction layer, contamination of the substrate, flushing gas during sputtering, and diffusion of the vacuum pump oil can be considered as the sputtering gas when the sputtering method is used. Various factors such as impurities. In the joint test, the 'wire bonding machine uses B_ lion _ _ ' and the gold line of the county 25μιη, in the supersonic stitch filling, super 15 201214778 曰 ^ plus Η 'between l〇〇ms joint conditions Implemented below. The centripetal measurement was carried out in the shear test mode of the joint test PTR1 of the company. The ADEPT1G1G of the company was implemented as the acceleration energy of the sub-ion source. As described above, the inventors have learned that the carbon concentration in the reflective layer of the inscription is green in the bonding strength between the gold wire and the reflective layer. This is all about the above embodiments. [10th embodiment] The ninth embodiment is a schematic cross-sectional view showing a semiconductor hairpin according to the first embodiment of the present invention. This embodiment is characterized in that the semiconductor light-emitting element 6 is mounted on the radiation-emitting layer 4, and the substrate 2B, 2C for supplying the wire (4) for wire bonding or internal wire bonding with the semi-light element 6 does not have the aluminum reflective layer 4: The wire bonding front end may also have the reflective layer 4, but in the case where the reflective layer 4 is not provided, by optimizing the surface state of the substrates 2B and 2C, the bonding condition is large, the assembly speed, and the yield k are obtained. good. Fig. 9 is a view showing an example in which the base material 2 of the mounting portion of the semiconductor light-emitting device 6 and the ore layers (1, 17, 18) provided on the substrates 2B and 2C have the same structure, but the substrate of 2a, 2b, and % Lin County can be called the same, but also (4). Further, Fig. 9 shows a case where the lower portions of the base materials 2A/2B and 2C are covered with a resin, but the entire surface or the portion of the back surface of the base materials 2a, 2b and 兀 can be exposed on the back surface. The exposed portion is connected to a metal heat release plate or the like by soldering or the like, whereby the heat dissipation property can be improved and the light output power can be increased. Further, when the semiconductor light-emitting element 6 having the back electrode is used, one or more power supply terminals for connection to the upper electrode may be used. Alternatively, a plurality of power supply terminals connected to the upper electrode may be wire-bonded. When a plurality of terminals are used, there is a case where it is easy to perform a wiring arrangement when a large current is driven, and a wiring arrangement between the light-emitting devices is used. Fig. 9 shows a case where the connection between the electrode portion of the light-emitting element and the power supply terminal is wire-bonded. However, the internal lead wire may be formed to be connected by wadge bonding, and the internal lead wire may be used for connection. The patterned wiring material is ultrasonically heated by the wedge connection. The present invention described in the representative configuration example of the semiconductor light-emitting device mounting substrate of the present invention and the semiconductor light-emitting device using the same is not limited to the configuration example, and may be within the scope of the technical idea of the present invention. Various structures. As a power supply terminal, the wire is connected within 5 turns. The main constituent material of the surface of the tapping wire bonded substrates 2B, 2C may be one selected from the group consisting of: silver, palladium, gold alloy, silver alloy, or palladium alloy, or a combination thereof. 16 201214778 (苐11~21st embodiment) The present invention has a basic structure of a cast-in-light element mounting substrate and a semiconductor light-emitting device according to an exemplary embodiment. A silver layer or a silver alloy layer is provided at least in part, and a subtractive layer is provided on the silver layer or the silver alloy layer. 4 semiconductor light-emitting device * mounting substrate and another basic configuration of the semiconductor light-emitting device: a silver layer or a silver alloy layer is provided on at least a part of a surface on which the semiconductor light-emitting element is mounted on the substrate, and the silver layer is provided in the silver layer An aluminum reflective layer is provided on the layer or the silver alloy layer via a metal layer. The thickness ‘the thickness of the erector is preferably _6μπι or more and 2μιη, and the impurity carbon concentration of the reflective layer is ΙχΙΟ14/cm3 or more and 1χΐ〇2〇/cm3 or less. In order to reflect light even when the reflective layer is very thin, the silver layer or the silver alloy layer is preferably Ο. ΟΙμηι above. As a metal layer interposed between the substrate and the silver layer or the silver alloy layer, for example, preferably selected from the group consisting of palladium, gold, tin, nickel, copper-tin alloy, copper-nickel alloy, iron-nickel alloy or combination. As the metal layer between the silver layer or the silver alloy layer and the aluminum reflective layer, for example, gold is preferable, and as its thickness, it is preferably Ο. Ίμιη below.夂 From the viewpoint of electric resistance and thermal resistance, a material composed of, for example, steel or a copper alloy is preferable as the material of the substrate. As another material of the substrate, for example, an iron-based alloy such as a 42 alloy or an iron-based frame material can be used. "1" As the substrate, a metal portion may be used. For example, a copper clad laminate in which copper is bonded to a resin may be used. As the resin, for example, a silver layer or a silver alloy layer is formed on a substrate: aluminum reflection The surface on the opposite side of the surface of the layer. The surface of the substrate on the side opposite to the surface on which the aluminum reflective layer is formed may be a surface of a substrate containing a structure in which the organic material or the inorganic material is composited. With reference to Fig. 10, the entire symbol J is schematically shown as a semiconductor light-emitting element mounting substrate according to the first embodiment. The substrate 1 mainly includes a substrate 2 and is formed on both surfaces of the substrate 2. A silver layer or a silver alloy layer 3 is formed with an aluminum reflective layer 4 formed on a side of the substrate 2 including a region on which the semiconductor light emitting element is mounted, via the silver layer or the silver alloy layer 3. The substrate 2 is made of metal or metal. A composite material of a machine material or an inorganic material. The metal material is not limited, and the most versatile substrate is a metal lead frame made of copper or a copper alloy. When a copper plate is used as the substrate 2, the thickness is not However, it can be selected with reference to the cost of 17 201214778. Considering the mass production, it is preferably a hoop material of a copper plate, but a short-sized sheet and various materials can also be used. When a composite material is used as the substrate 2 A steel plate and a laminated plate to which a copper plate is bonded to a resin material can be used. As the resin material, a hard plate-shaped resin and a thin resin having flexibility can be used. As a representative example thereof Each of them may be a glass epoxy resin substrate (glass cloth substrate resin plate), a polyimide resin system, etc. The inscription layer 4 is a batch processing using a vapor deposition device having a pressure reducing pressure regulating function. It is manufactured by continuous processing, etc. From the viewpoint of reflectance, as the thickness of the aluminum reflective layer 4, it is preferably 0. 006μιη or more. In addition, from the viewpoint of economy, 2μηι or less is appropriate. Hereinafter, a method of manufacturing the substrate 1 for mounting a semiconductor light emitting element will be described. In the case of the production of 4, first, a copper plate was prepared as the substrate 2. When the base material 2 is a steel sheet, the size of the base material 2 is, for example, a length l〇〇mx width 5〇mmx thickness 〇2 mm, a thickness of the silver layer is 〇〇2 μm, and a thickness of the aluminum reflective layer 4 is, for example, a size of 〇05 μm. . Next, a silver layer or a silver alloy layer 3 was formed by wet plating on both surfaces of the substrate 2. Silver plating is generally performed using a silver cyanide plating bath, and a cyanide-free bath can also be used. When plating, the gloss can be improved by adding an organic luster and adding a small amount of a metal salt (yttrium, nickel, cobalt, tin, selenium, etc.). In addition, while adding silver salt to the electrician, adding gold cyanide gold (4) gold raw material, so that silver alloy plating can be performed. Similarly, by adding a compound salt of platinum, palladium, rhodium, nickel, indium or the like, silver alloy plating can be performed for the silver alloy layer. Next, the brittle layer 4 is formed on one side of the silver layer or the silver alloy layer 3 by a resistance heating/cylindrical vacuum evaporation apparatus. In terms of frequency, the short-cut material 16 > 1 ' of the 2nd cut (10) (9) is placed on the umbrella-like mold with a radius of 3G () mm. Configure three groups on the raft. Then, using the resistance heating source (output power trace) as the source of the test, the true line is 2xl (r4pa, the thickness of the thickness is G Ό5μιη, the inversion layer 4. As the Lin source of the Shao] can be used in the load lock mode In the electron beam method, it is also possible to use the f ink to hang it. By optimizing the Durus, which is excellent in durability, the lamp can be vaporized stably. In the eleventh embodiment, the vacuum wire is used in a vacuum. Machine, but it is also possible to use the negative-difference-plating_shi (four) inspection device. Correction, shooting is a continuous-stage device that can be tested with a box. The vacuum Wei device can be appropriately selected by considering the film quality 'production 18 201214778 rate, etc. Further, the shape of the subtractive layer 4 may be, for example, an ion plating method, a forging method, a metal coating method, or the like. The film thickness measurement of the inscription layer 4 is performed by sims analysis. The thickness of the main constituent element of the underlying layer directly under the reflective layer from the surface of the reflective layer to the signal intensity of 1/2 of the maximum intensity of the base shot is taken as the film thickness of the shot layer. When the underlayer is silver, 倥虢 疳 铭The comparison and evaluation of the subtraction (4) 4 were carried out, and the initial reflectances of the thicknesses of the subtracted (four) 4 and the vulcanization resistance of the comparative examples 21 to 24 were summarized and shown in Table 3. In the initial reflectance and the vulcanization resistance resistance, first, the seven modified thicknesses as shown therein were produced by the above-described manufacturing methods by the methods of Examples 21 to 25 and Comparative Examples 21 and 22 shown in Table 3 below. In the reflective layer 4, the initial reflectance at a wavelength of 46 Å is measured. At this wavelength, the reflectance of barium sulfate is taken as 100%, and the initial reflectance of yttrium is preferably 7% or more, and is particularly good in Table 3 below. In other words, the initial reflectance is less than 9〇% as a difference, and is represented by the symbol X in Table 3. As shown in Table 3 below, when the aluminum reflective layer 4 is very thin, that is, the aluminum reflective layer The thickness of 4 is less than 〇. Comparative Examples 21 and 22' of 〇〇6μηι were affected by the reflectance of the metal of the underlayer (here, silver), and the initial reflectance was good. For the sample having the thickness of the reflection layer 4 having the thicknesses of the examples 21 to 25 shown in Table 3 below, 3 ppm of postal (hydrogen sulfide) in a gas atmosphere temperature, humidity 80/〇 Under the conditions of 'spray % tree (tested according to the Japanese industrial standard Cong 2 switch of the corrosion resistance test) ^! Correction of the vulcanization characteristics in the lower wire 3 towel with initial reflectivity and 96 hours after vulcanization reflectivity Than said. As is apparent from the following Table 3, in Examples 21 to 25 in which the thickness of the aluminum reflective layer 4 was 〇6 μm or more, high vulcanization resistance with respect to the initial reflectance of 胄8 〇% or more was obtained. In Table 3 below, in Comparative Example 23 in which only the aluminum layer of 3 μm was provided on the substrate 2 instead of the aluminum reflective layer 4, the initial reflectance was 93%, which was good for the vulcanization property. The reflectivity is 29% 'substantially decreased, * the initial reflectance and the vulcanization resistance. On the other hand, it can be seen that although the vulcanization resistance of 19, 201214778 of Comparative Example 24 in which the ruthenium layer (〇7(4) and 妇5(4) are provided on the substrate 2 is good, the initial thief rate is 63%, and the sister paste 23 cannot. Both the initial reflectance and the vulcanization resistance are combined. In summary, the characteristics required for the substrate to be mounted as a semiconductor light-emitting device, that is, the initial reflectance and the vulcanization resistance (that is, in the touch can be confirmed) The reflectance after use in a vulcanized environment) Both are good (4) is the thickness of the minus (4) 4 is more than the above. It can be combined with the initial reflection and release vulcanization. It preferably satisfies the so-called initial reflector of more than 9〇%. The vulcanization resistance is 80% or more. In order to perform wire bonding on the substrate 1 and perform argon cleaning, the wire is bonded to the gold wire, and the substrate 1 of the G_G〇6Mm company of the reflective layer 4 is subjected to a Wei test, and the result is almost As a result, it was found that the resistance to the surface cleaning was strong, and there was no deterioration or the peeling. (Effect of the eleventh embodiment) Silver or silver layer on the surface The layer 3 is formed to form the reflective layer 4'. The semiconductor light-emitting element wire board which is unvulcanized and has high and stable reflection characteristics can be obtained, and the fuselage of the substrate is used. This is the following characteristic of the use of: the reflection of aluminum The rate is up to 3 times higher than that of silver in the ultraviolet region, and has a reflectance close to silver for purple, red, and outer lines, a good color balance in the metal, high reflectance after silver, and compared with silver. In addition, the effects obtained by the eleventh embodiment are also obtained in the following embodiments. Hereinafter, reference is made to the πth to the 19th and the [Twelfth Embodiment] Referring to Fig. 11 and Fig. 11 is a view schematically showing a semiconductor light-emitting device as a twelfth embodiment. In the figure, the entire symbol 5 indicates that the first frame is used. The semiconductor light-emitting device of the substrate 1 for mounting the semiconductor light-emitting device t is shown. The semiconductor light-emitting device 5 of the illustrated example uses the substrate 1 shown in the figure as a pair of metal lead frames. The pair of substrates 丨 are mainly composed of a base material 2, a silver layer or a silver alloy layer 3, and an aluminum reflective layer 4, and are disposed on substantially the same surface. In the substrate 1, as shown in FIG. A semiconductor light-emitting element (LED wafer) 6 is mounted on the aluminum reflective layer 4 of the substrate 。. The bonding line 7 connected to the semiconductor light-emitting element 6 is bonded to the substrate 1 _reflecting layer 4 as shown in Fig. 11. In addition to the pair of aluminum reflective layers 4 and 4 and the semiconductor light-emitting element 6, the semiconductor light-emitting device 5 is formed with a resin-made outer covering portion 8 surrounded by a portion where the side surfaces of the pair of base materials 2 and 2 are close to each other. 8 has a recessed portion 8a that is opened by forming an inclined surface 8b whose end is enlarged in a direction away from the base material 2. The light-transmissive resin that seals the semiconductor light-emitting element 6 is filled in the concave portion, and the light-transmitting resin portion 9 is formed. The light transmissive resin portion 9 constitutes a part of the outer cladding portion 8. By mixing a phosphor material such as YAG or the like semiconductor light-emitting element 6 in the light-transmitting resin portion 9, it is used as a pseudo white LED device composed of a GaN-based LED of 460 nm. The outer covering portion 8 has a concave portion 8a having an inclined surface 8b which is formed to have a distal end shape in a direction away from the base material 2, but is not limited to the illustrated example, and may be, for example, opposed to the base material 2. The rising vertical surface replaces the concave portion formed by the inclined surface rib. Further, the aluminum reflective layer 4 may be formed on substantially the entire inner surface of the outer cladding portion 8 or by removing a part of the remaining portion. The reason for this is because light emitted from the semiconductor light emitting element 6 is reflected in the outer cladding portion 8. As a specific method of forming the aluminum reflective layer 4, there are various methods as follows, and any of them can be used. ' (1) Use! A method of forming a S-reflecting layer 4, and a function of shielding the outside of the region of the outer covering 8. (7) After the insole layer 4 is formed on the entire surface of the substrate 2, the region of the outer cladding portion 8 is shielded by a tapping or photolithography process, and then the aluminum is removed by etching. (Effect of the twelfth embodiment) The semiconductor light-emitting device 5 of this configuration is a light-passing ship reflection layer that is emitted from the semiconductor light-emitting element 6 by the presence of the in-reflective layers 4 and 4 located on the bottom surface of the concave portion of the outer package portion 8. The reflection action of 4 and 4 is reflected on the opening side of the concave portion 8a, and the effect of increasing the amount of light from the semiconductor light-emitting element 6 is exerted. As described above, the brain reflection layer 4 has good resistance to vulcanization, so that high reflectance can be maintained over time. [Thirteenth embodiment] Fig. 12 is a view schematically showing a cast light-emitting device mounting panel as a thirteenth embodiment. In the figure, the difference from the above-described Uth embodiment is that a substrate in which the light-reducing layer 4 is formed on the silver layer or the silver alloy layer 3 21 201214778 via the gold flash layer 10 is formed. In the illustrated example, the substrate i is sequentially formed on both sides of the substrate 2 by a wet plating method with a silver layer or a silver alloy layer 33, and a layer 10, 1 〇 on one side of the substrate 2 The reason why the gold flash plating layer 1 is formed on the surface of the substrate 2 in the order of the silver layer or the silver alloy layer 3, 3, and the gold flash layer ι〇, 1〇 In order to ensure solder wettability between the New 2 and the printed circuit board of the silk semiconductor light-emitting device, that is, to improve solder adhesion. It can be appropriately set according to the components to be mounted, but it is preferable that the thickness of the silver layer or the silver alloy layer 3 is LG 〜5 晔, and the thickness of the gold layer 1 Ο is Ο. Ίμηι The following dimensions. From the viewpoint of the resistance to vulcanization, the degree is preferably -6 or more and 2 or less. The method for producing the thick reflective layer 4 of the crucible 4 is carried out by batch processing or continuous treatment using a vapor deposition apparatus having a pressure reducing function. The silver layer or the silver alloy layer 3 can be known by the wet type ore method, vacuum distillation or the like, and the mineral layer of the semiconductor light-emitting device can be coated on the entire surface of the material. Most of them can be produced at low cost, so that the silver layer or the silver alloy layer 3 is preferably formed by wet plating. 3' It should be noted that the thickness of the base layer formed by the wet plating method of the silver layer or the silver alloy layer 3 and the gold flash layer 10 is calculated by integrating the current value at the time of plating. (Effect of the thirteenth embodiment) According to the thirteenth embodiment, by using aluminum as a reflective layer, it is possible to ensure good vulcanization resistance. Further, by using the aluminum reflective layer 4 having a thickness of 〇 6 μm or more, in addition to the effect of obtaining excellent durability and maintaining high reflectance, the following effects are exhibited. That is, the silver layer or the silver alloy layer 3 exhibiting the above numerical range can prevent the diffusion of the main material steel of the base material 2, and the gold flash plating layer 1 of the above numerical range can improve the solder wettability and can maintain a new effect such as long-term maintenance. By forming the substrate structure of the thirteenth embodiment, the substrate 1 suitable for soldering can be efficiently obtained. [Fourteenth embodiment] Referring to Fig. 13, Fig. 13 is a view schematically showing a semiconductor light-emitting device 5 of a fourteenth embodiment using the substrate i shown in Fig. 12. In the semiconductor light-emitting device 5, the outer covering portion 8 and the translucent resin portion 9 in the twelfth embodiment shown in Fig. u are also provided. When a steel sheet is used as the substrate 2 at the time of manufacturing the semiconductor light-emitting device 5, it is prepared to have, for example, a length of 22 201214778 degrees 100 mx width 5 〇 mm x thickness 0. 2mm long-sized copper plate, on the surface of the substrate 2, a silver layer or a silver alloy layer 3 having a thickness of 3 μηη, a gold amphibole layer having a thickness of 0 01 μη 10 is sequentially formed by wet electric bonding method, and then a gold flash plating layer is left. The upper portion is used for welding, and the aluminum reflective layer 4 is partially vapor-deposited at a portion used as a reflective film. As a result, a material in which the aluminum reflective layer 4 is present in the portion where the gold flash plating layer 10 is used for reflection is obtained. Then, the substrate 2 was formed into a frame shape for mounting a semiconductor light-emitting device by a press machine or etching. Then, a pair of substrates are arranged close to each other on substantially the same surface. A resin-made outer envelope portion 8 is formed which surrounds a portion where the pair of base materials 2, 2 are adjacent, and has a recessed portion 8a which is cut through the periphery of the semiconductor light-emitting element 6. Next, the semiconductor light-emitting element 6 is mounted on the aluminum reflective layer 4 with a conductive paste, and the surface electrode of the semiconductor light-emitting element 6 and the lead frame (substrate 1} are connected by a bonding wire 7 made of gold. Finally, in the outer cladding The concave portion 8a of the portion 8 is filled with a translucent resin (such as a resin) so as to cover the semiconductor light-emitting device 6 to form a translucent resin portion 9 which is a part of the outer cladding portion 8. [In the fourteenth embodiment, After the substrate 1 is produced, an example of a predetermined shape is formed by a press or etching, but a post-plating method may be used. That is, after the substrate 2 is molded into a predetermined shape, the side wet type electric lining is used in the substrate. 2, the upper layer of the silver layer or the silver alloy layer 3, and the layers of the gold ore layer 10, the dry plating method such as the empty level method forms the domain weave 4. Further, for the substrate 2, the erotic line composed of copper, However, it is also possible to use a substrate having copper wiring for the purpose of the purpose, etc. In addition, other metal substrates such as iron-based 42 a gold may be used in consideration of use, cost, etc. Board 'flexible wiring board forming step formation After wiring, the insole reflective layer 4 is formed and used. Thus, depending on the purpose, structure, material (steel plate or flexible lion substrate with flexibility), the shape can be changed (profit cutting, bending, drum) The order of the shape of the convex processing, the plating, and the vapor deposition. The mounted semiconductor light-emitting element 6 can be mounted with, for example, (10) ship milk, AK}aAS_LED, GaP-LED, AlGalnP-LED, InGaN_LED, etc. The illustrated semiconductor light-emitting element 6 exemplifies a longitudinal element of an electrode having a top surface and a bottom surface. However, it may be a plane of (10) == two-electric Sit-surface on the same surface. In the case of the structure, there is a case where the electrode surface faces the surface side (upper side in FIG. 13), and both the cathode and the anode are wire-bonded; the so-called flip chip which is directly connected by the electrode 23 201214778 = lower j lead frame side) The installation method can be used with either installation 1. It is also possible to use a copper wire bonding or a wire bonding instead of a gold wire bonding. In the fourteenth embodiment, the substrate to which the gold flash plating layer 1 is applied is used, and when the pitch is 4 (for example, Μ "1"1 pitch), that is, when the precision is not high, The A chain layer 10 can also bring about a high yield, so the gold flash layer 10 can be omitted. (Effects of the Fourteenth Embodiment) According to this, 纟. The rotating body of the structure is 5, and the presence of the in-reflecting layers 4 and 4 on the bottom surface of the concave portion a formed in the outer covering portion 8 is the same as that of the semiconductor light-emitting device shown in FIG. The light emitted by the 6 reflections is reflected by the reflection layers 4 and 4 to the opening side of the recess %, and the effect of increasing the amount of light from the semiconductor device 5 is exerted. In addition, since the reflective layer 4 has good resistance to vulcanization, high reflectance can be maintained for a long time. Further, since there is an inter-sheet layer composed of a silver layer or a silver coin 3 and a gold glitter layer 1 基材 between the substrate 2 and the reflective layer 4, the readable high-ampere material and the non-error-welded infiltration are immersed. Sex. [15th embodiment]. The 14th ® is a schematic representation of the semiconductor light-emitting device mounting substrate of the fifteenth embodiment. The ninth embodiment is a modification of the substrate 1 of the thirteenth embodiment shown in Fig. 12, and the substrate 与 according to the thirteenth embodiment is not changed in the basic configuration. The greatest difference from the above-described thirteenth embodiment is that, as shown in Fig. 14), a silver layer or a silver alloy layer 3 and a gold flash layer 1 are sequentially formed on one surface of the substrate 2, on the gold flash plating layer. A configuration example in which the aluminum reflective layer 4 is formed on a part thereof is shown in Fig. 14 and is a configuration example in which one end portion of the substrate i is bent toward the side of the gold flash plating layer by approximately 9 degrees. As another configuration example different from the above-described thirteenth embodiment, as shown in FIG. 14 , a silver layer or a silver alloy layer 3 and a gold flash layer 1 are formed on the entire surface of the substrate 2, and the gold is formed. The entire surface of the flash plating layer 10 is formed with an aluminum reflective layer 4'. The one end portion of the substrate 1 is bent to the side of the gold flash plating layer by 18 turns; as shown in Fig. 14(d), the substrate is The aluminum reflective layer 4 is directly formed on one surface of the second surface, and the silver layer or the silver alloy layer 3 and the gold flash plating layer 10 are formed on the other surface of the substrate 2. The substrate 1 shown in Fig. 14(a) is a gold flash layer 1 having a thickness of 3 μm, a silver layer or a silver alloy layer 3, and a thickness of 〇·ιμιη, on one surface of a substrate 2 made of copper. After the crucible, the aluminum reflective layer 4 is formed by vapor deposition on the top surface of a part of the gold flash layer 10. Incidentally, when silver or a silver alloy, gold or aluminum is sequentially laminated on the copper base material 2 as in the configuration example, in addition to the aluminum reflective layer 4 24 201214778, the Buf Hf type electric ore method. For the reflective layer 4, at this time, it is not possible to carry out the impurity by wet electric forging, so that it can be vacuum-tested. Even other methods, such as splashing in an inert gas, can be utilized. Further, many of these methods can be used from the viewpoints of cost, simplification of the process steps, and the like. The substrate 1 shown in Fig. 14 (9) is sequentially formed on the substrate 2 by a method of electro-minening to form a silver layer or a silver alloy layer 3 having a thickness of 2 μm and a thickness of α. After 1μιη of gold flashing 1G, the handle reflective layer 4 is formed on the surface of a part of the gold flash layer, and the m4_bf substrate is formed by sequentially forming a thick layer of silver on the substrate 2. The alloy layer 3 and the gold flash plating layer having a thickness of G1 (four) are formed by forming a light-reducing layer 4 on the entire surface of the gold-plated layer 1G. The structural examples shown in Figs. 14(b) and (C) are a method of using the semiconductor light-emitting element 6 on the β top surface of the aluminum reflective layer j and performing wire bonding on the bottom surface or the side surface of the substrate 2. More specifically, the structure in which the base material 2 is bendable can be applied. In the fifteenth embodiment, the wire bonding is performed on the back surface of the substrate 2. However, the silver layer, the silver alloy layer 3, the gold flash layer 1 or the like may be coated on the back surface depending on the purpose. The substrate shown in Figure 14 (d)! The silver layer or the silver alloy layer 3 and the gold glitter layer 1 are applied only to one side of the substrate 2. Therefore, 'the amount of use of these metals can be suppressed. ^When only the surface of the substrate 2 is subjected to electro-mineralization, the two substrates 2 and 2 are bonded together to enter the Wei step, and then separated, so that the reflection can be achieved without the masking material. Since the layer 4 is affected by the thickness according to the thickness as described above, it is preferably 〇(8)6μηη or more. When the shaft is in the base material 2, the same effect as in the thirteenth embodiment can be obtained by the fifteenth embodiment. . The substrate 1* according to the illustrated example can be formed by processing the end portions (also referred to as substrate connection wires and outer wires) into a predetermined shape. As an example thereof, the bottom surface f of the exposed portion (outer wire) of the package portion 8 is curved to be tanned with the top surface of the printed circuit board, and can be connected to the substrate 1. In other words, the central portion of the substrate 1 serves as a line for the wire 1 and the surface of the layer 10 (the 16th embodiment). 25 201214778 Referring to FIG. 5, the first embodiment schematically shows the first embodiment. A substrate for mounting a semiconductor light emitting element. In the etched towel, it is different from the above-described embodiments in that (4), gold (Au), tin (Sn), nickel (10), copper (c alloy, etc.) are formed on both sides or surfaces of the substrate 2. A metal layer u of a copper (Cu)-nickel (10) alloy is formed on the metal layer u or the substrate 2, and a silver layer or a silver alloy layer 3 is formed thereon, and a minus (4) 4 is formed on the silver layer alloy layer 3. As the substrate In the structural example of 1, as shown in Fig. 15 (8), a metal layer 1 is formed on both surfaces of the substrate 2, and a silver layer alloy layer 3 is formed on the n-plane of the metal layer, and the silver layer or the silver alloy layer 3 is formed. a portion of the surface forming the reflective layer 4; as shown in Fig. 15 (9), a metal layer η is formed on the surface of the substrate 2, and a silver layer or a silver alloy layer 3 is formed on the entire surface of the metal layer n. A configuration example in which the light-reducing layer 4 is formed on the surface of the silver layer or the portion of the silver alloy layer 3. As another configuration example of the substrate 1, as shown in Fig. 15 (4), a metal layer is formed on one surface of the substrate 2. A configuration example in which the inscription layer 4 is formed on the entire surface of the ore-silver alloy layer 3 in the other-surface silver layer alloy layer 3 of the substrate 2. (Effect of the sixteenth embodiment) In the way The same effect as the above-described first embodiment can be obtained. The bronze as a constituent component of the metal layer 11 has an antioxidant wire and has an advantage of being fused with tin for tandem bonding. On the other hand, although tin is slightly easier It is oxidized', but has the advantage of being easy to weld and inexpensive. Nickel, which is a constituent component of the metal layer u, has an effect of suppressing the diffusion of copper and an advantage of increasing hardness; and a copper-tin alloy which is a constituent of the metal layer is more than steel. It is difficult to oxidize. Compared with tin and copper, it has the advantage of being easily fused with tin. The copper alloy as a constituent of the metal layer η has the advantage of being easily fused with tin, and according to the characteristics, it can be manufactured according to the use conditions. [Embodiment 17] FIG. 16 is a view schematically showing a semiconductor power-generating element mounting substrate as an embodiment of the 帛17. In the seventeenth embodiment, The base material 2, the silver layer or the silver alloy layer 3, the light-reducing layer 4, and the gold flash plating layer according to the above-described thirteenth and fourteenth embodiments are not changed in the basic structure. The basic structure of the substrate 1 is a gold plating layer 12 formed at or above the inscription layer 4 or the gold miner layer. As an example of the substrate 1, as shown in Fig. 16(a) An example of a structure in which the It gold layer 12 is formed on the surface of the 4-knife on the aluminum reflective layer 4; as shown in the 16th_), there is a subtraction from the surface portion of the gold-flash layer (7) 26 201214778 An example of the structure of the layer 4 in the same-surface shaped gold layer i2. As an example of the substrate 1, further, as shown in Fig. 16 (4), there is a portion of the surface portion of the gold ore layer. An example of the structure in which the entire surface of the reflective layer 4 forms the bond gold layer 12; as shown in Fig. 16 (4), there is an aluminum reflection on the surface of the gold flash layer and a portion of the surface formed on the gold flash layer 1 An example of the structure in which the gold plating layer 2 is formed on the entire surface of the layer 4 is shown. (Effects of the Seventh Embodiment) In the n-th embodiment, the same effects as those of the above-described fifth embodiment can be obtained. [Embodiment 18] FIG. 17 is a view schematically showing a semiconductor light-emitting device using the substrate i shown in the (8)th aspect of the semiconductor light-emitting element mounting substrate 1 of the seventh embodiment. one example. In the semiconductor light-emitting device 5 shown in Fig. 17, the pair of substrates ii ^ are arranged close to each other on substantially the same plane. The gold plating layer 12 is bonded to a bonding wire 7 electrically connected to the semiconductor element 6. The remaining structure is no different from the above embodiments. In the above-described seventeenth and eighteenth embodiments, the silver layer, the silver alloy layer 3, and the gold flash layer 10 are sequentially formed on the entire surface of the substrate 2, but the invention is not limited thereto. As described in each of the above embodiments, it is also possible to apply to the case where the metal layer n of a single layer is formed, and the inscription layer 4 is directly formed on the substrate 2. (Effects of the Eighteenth Embodiment) In the eighteenth embodiment, the same effects as those of the above-described fifth embodiment can be obtained. The gold plating layer 12 in the above-described seventeenth and eighteenth embodiments can be used for electrical connection of the semiconductor light emitting element 6 mounted on the aluminum reflective layer 4. In the substrate structure shown in Figs. 16(c) and 16(4), the thicker the gold plating layer 12, the lower the reflectance on the short wavelength (blue) side, but the better the connectivity of the gold wires. The structure of the gold plating layer 12 may be determined according to the use 'reference reflectance. Incidentally, the plating layers (3, 10, 12) may be formed by a wet plating method or may be formed by other methods. [19th embodiment] - Referring to Fig. 18, Fig. 18 shows a typical use state of the semiconductor light-emitting device as the πth embodiment. The semiconductor light-emitting device 5 is a semiconductor light-emitting device using the semiconductor light-emitting element mounting substrate 1 according to the above-described first to eighteenth embodiments, and is used, for example, on a printed circuit board 13. In order to be mounted on the printed circuit board 13, the substrate has a first curved portion 21'. The first curved portion 21 is a portion that extends linearly from the side surface of the outer covering portion 8 to the outside. The bent circuit portion 22 on the side of the printed circuit board 13 is a second thin portion 22 that is horizontally thin with respect to the printed circuit board. The 22 is formed substantially in the same plane as the bottom surface of the outer package portion 8. . The bottom surface of the second bellows portion is more near or below, or a portion above the upper surface of the outer envelope portion 8 than the curved portion (4) of the outer peripheral portion 8 and the printed circuit board 13 through the material 14. A part of the substrate for the second variable conductor light-emitting device. $15 _ ° outer wire plus half This outer wire 20 includes each layer (3, 1 〇, u). As shown in the fourth paragraph (4), there is the following structural example: It has the following: =2. An example: 22 outer conductors make up and make the outer guide.  ^ <The curved portion of the concave portion of the f-curved portion is substantially the same as the outer peripheral portion of the outer surface of the outer covering portion 8 of the outer surface of the outer surface of the outer surface of the outer surface of the outer portion The opposite side of the opening side of the first bending 邙 2: > 3 dimer a is substantially bent. The first f-curved portion 22 is substantially bent toward the horizontal direction away from the outer-body portion 8, as shown in Fig. 18 (9), and the second squall portion 22 is along the secret path. There is a structural example in which the second curved portion 22 having the first f curved portion 21 and the second curved portion 22 and the second curved portion 22 of the outer lead 20 are folded along the four portions f of the outer covering portion 8; The first curved portion 21 is bent substantially 90 degrees in the same direction in the middle of the opening side of the outer guide (four) in which the first first 22°P is the knife direction. _ 0 The horizontal direction of the sin near the outer body part 8 is roughly bent by 90 degrees. The configuration example of Fig. 18 can be used to open a light-transmissive hole in the printed circuit board 13 from the printed circuit board, or to illuminate the printed circuit board U from the printed circuit board U. The case where light is emitted from the side of the circuit board 13 is shown. (Effect of the nineteenth embodiment) The same effect as the above-described first embodiment can be obtained in the nineteenth embodiment, and the bending method of the outer lead 2〇 is not limited to the example of the drawing. It can be various shapes according to each of the semiconductor light-emitting devices 5. [Twentyth Embodiment] In the twentieth embodiment, the aluminum substrate is disposed on the substrate 2 via the silver layer or the silver alloy layer 3, and the second embodiment is different from the first embodiment shown in the first aspect. Where. In the second embodiment, the configuration of the substrate 1 is different from that of the first embodiment in that the carbon concentration of the aluminum reflective layer 4 is set to 1χ1〇2〇/cm3. In order to evaluate the bondability of the substrate 有关 related to the second embodiment, the wire bonding is performed with a bonding wire made of gold. Here, the wire bonding means that the electrode pads on the lead frame side and the electrodes mounted on the elements of the lead frame are electrically connected, and are connected by gold or the like. Usually, in the half-body 7L pieces of the guide material such as wire-making technology, as the electric connection type, generally ^ line, in recent years, in the part of the installation technology also carried out the flip-chip ball bump A connection using a metal wire such as gold, silver, copper, or aluminum is performed. The first joining means that the wire (the wire ball) in which the tip end of the wire is made into a ball by discharge is previously joined. Generally, in view of positional accuracy and pressure contact property, the electrode on the element side is often first joined. In the twentieth embodiment, the wire bonding machine uses M〇DEL77〇〇D of w^T b〇nd muscle and uses a bonding wire having a diameter of 25 μm. It is carried out under the condition that the bonding condition 'line is 7 () handsome, the load is io 〇 g, the ultrasonic intensity is 350 mW, and the ultrasonic application time is 1 〇〇 1 batch. In the above-described eleventh embodiment of the lake, the tip of the wire is formed into a spherical shape by being electrically connected to the contact substrate on the portion where the plating layer 4 is provided. The second bonding means that after the first bonding is performed on the electrode on the element side, the bonding is performed next to the conductive electrode to be connected by the above-mentioned wire (crimping stitehbQnding). The seam bonding means that the wire shape processing cannot be performed in a state where the wire is connected, so that the film is directly pressed and stretched and cut. The wire connection is completed by continuously performing the first bonding and the second bonding. In the tenth embodiment, as in the above-described U-th embodiment, a portion in which the tip end of the wire is pressure-bonded to the substrate made of copper is provided with the insole reflective layer 4. Table 4 below shows the relationship between the carbon concentration in the aluminum reflective layer 4 and the bonding strength of the bonding wires 7 made of gold. Example 26, shown in Table 4 below, was formed into a base material composed of copper having a thickness of 7 μm by a wet electric ore method on the entire surface of a 12-thick polyimide resin film having a thickness of 12, and having a thickness of 2 The silver layer or the silver alloy layer 3 of the division, and the sheet obtained by laminating the heat-resistant acrylic resin adhesive is formed into an aluminum reflective layer 4, and the metal is punched and cut to an unnecessary portion. The carbon concentration in the inscription layer 4 of Example 6 was subjected to SIMS analysis, and the carbon in the green reflecting layer 4 was 1×10 20 pieces/cm 3 . The solid side 27 shown in Table 4 below was favorable for the copper-containing alloy. After the ship plating method forms a silver layer or a silver alloy layer 3 with a thickness of 201214778, it is only subjected to stamping processing, and the obtained product is fixed in a vacuum steaming device by a die-free (SU·4) tool holder. , forming a reflective layer 4 of thickness Μ 的. The carbon concentration in the reflective layer 4 of this Example 27 was 3χ1〇19/cm3. In Example 28, shown in Table 4 below, a silver layer or a silver alloy layer 3 having a thickness of 3 μm was formed by wet plating on a copper substrate having a thickness of 〇, and then subjected to press working, and _^ The thermal acrylic resin is adhered to a three-layer epoxy substrate having a thickness of 〇5 mm to form a light-emitting device circuit substrate. The wire was placed on the above-mentioned true transfer apparatus to form a reflective layer 4' of 〇 2 并 and SIMS analysis was carried out. herein,! The carbon concentration in the g-reflecting layer 4 is the minimum degree of agronomy of the carbon in the reflecting layer 4 of the inscription. The carbon concentration in the reflective layer 4 is, for example, 〇2〇/cm3. As a criterion for evaluation, the first joining strength is a case where the shear strength of 〇39N or more is good, and the following Table 4 is indicated by the symbol Q. The case of having a fine strength of less than 0 39 N is regarded as a bad, and is indicated by the lower X of the next charm. The second bonding test is a case where the shear strength of 〇〇49 Ν or more is used as a good condition, and the symbols are given in Table 4 below. Said. Will have less than 0. The case of the shear strength of 049 作 is made by Lin Liang, which is indicated by the number 4 (4) of the lower wire. In the above embodiment, in order to separate and measure the strength of the first and second joint strengths, a shear test is performed, but the cut test is used to evaluate the time and effort of the non-reading of the line (four degrees), so the connection strength of the ship is generally evaluated. Most of the time is the pull test. The tensile test refers to the hook on the line between the first and the second, which evaluates the load, the fracture position and the shape of the fracture that is pulled up, but the money equivalent to the connected gold-bribery or touch-up gold wire cannot be tested. . The inventors of the present invention used Dage's push-pull tester series 4〇〇〇 to perform the following tensile test. As is clear from Table 4, in the example % of the aluminum reflective layer 4 having a carbon concentration of 3χ1〇2〇/cm3 or more, the 'bonding strength is lowered'. Therefore, as in Examples 26 and 27, the carbon concentration of the reflective layer 4 is made lxl02G/cm3 or less 'the joint strength of the joint is good. In the twentieth embodiment, the carbon concentration in the reflective layer 4 is increased by using an organic material such as an epoxy resin or an acrylic adhesive. The reason for this is that various factors such as contamination of the substrate 2, flushing gas, reverse diffusion of the vacuum pump oil, and impurities of the plating gas during the doping method can be considered as the source of the wave of carbon. Further, in the bonding test, the wire bonding machine used MODEL 7700D of B〇ND mc, and a gold bonding wire having a diameter of 25 μm was used. It is carried out under a bonding condition in which the ultrasonic intensity is 35 〇 and the 201214778 ultrasonic wave application time is 100 ms. It was carried out in the shear test mode of the bonding tester PTR-1 of Kanno (3). The SIMS measurement was carried out using the phi company ADEPT1010 as a primary ion source with an absolute energy of 3 keV. (Effects of the second embodiment) According to the twentieth embodiment, by setting the carbon concentration of the aluminum reflective layer 4 to 1×10 〇 2% @/cm 3 or less, in addition to the effects of the above-described eleventh embodiment, A semiconductor light-emitting device mounting substrate having excellent bonding properties and a semiconductor light-emitting device using the same. [21st embodiment] Referring to Fig. 19, Fig. 19 is a view schematically showing a semiconductor light-emitting element mounting substrate and a semiconductor light-emitting device according to a twenty-first embodiment. In the figure, the basic configuration of the twenty-first embodiment is such that the semiconductor light-emitting device 6 is mounted on the independent neon 2A and is not mounted on the substrates 2B and 2C for energization, at this point and above. Each embodiment is largely non-existent. In the example of the drawing, the light-reducing layer 4 is not provided on the base materials 2B and 2C for the power supply terminal for wire bonding with the semiconductor light-emitting element 6 or the wire bonding wire called the (four) wire, and the wiring material is used. A product obtained by processing a metal fg such as copper into a fine line shape by waste or the like. The wire bonding tip may have the inscription layer 4, but when the insole layer 4 is not present, the surface conditions of the substrates 2B and 2C are optimized, so that the range of the bonding conditions is increased, and the yield is good. . In Fig. 19, in the same-structure example, the substrate 2A of the mounting portion of the semiconductor light-emitting element 6 and the silver layer or the silver alloy layer 3 of the substrate 2B, 2C, and the gold flash layer 1 are shown. However, the structure of the base material 2a, the silver layer of the base materials 2B and 2C, the silver alloy layer 3, and the gold glitter layer 1〇 may be different or may be separately produced. The joint is a crimp joint of the scale and the (four) wire, so the main material of the joint surface is preferably gold, silver, and! Ba, or such as the main; ^ into the alloy of the component. In Fig. 19, the steps of the substrate 2A, 2B, and 2 (the lower portion of the base material is covered with the resin of the outer covering body) are shown, but the base material 2Α, 2β, 2c may be exposed on the back surface. - The step is connected with a metal heat release plate, etc., so that it is "exothermic and can increase the light output power. In addition, when the back electrode|body light-emitting element 6 is used, the power supply is connected to the upper button. _子有—It can be used alone, or when the recording power supply terminal connected to the upper electrode is wire-bonded to the root terminal, there is a capacity _亍大__Wiring configuration, and the succession ^= 己31 201214778 Further, in the case of Fig. 19, the connection between the electrode portion of the semiconductor light-emitting device 6 and the power supply terminals of the base materials 2B and 2C is performed by wire bonding, but a wire can be produced and used for replacement. In the connected connection, the wire is connected by a patterned wiring member, and the junction is ultrasonically heated. As described above, the inventors have learned that the carbon concentration in the reflective layer 4 is composed of gold. Bonding tape 7 and the bonding layer 4 It should be noted that all of the above-described embodiments are suitable for the above-described embodiments. From the above description, the semi-conductive (four) optical element wire substrate and the ruthenium substrate of the present invention have been described based on the above-described respective embodiments, examples, and the like. A typical configuration example of the semiconductor light-emitting device, but the present invention is not limited to the configuration examples such as the above-described respective embodiments and the illustrated examples, and various configurations are possible within the scope of the technical idea of the present invention. The main constituent material of the surface of the inner wire bonded base materials 2B, 2C may be one selected from the group consisting of gold, silver, palladium, gold alloy, silver alloy, or palladium alloy, or a combination thereof (22nd to 31st embodiments) Embodiments of the semi-conductive optical element mounting substrate and the semiconductor light-emitting device of the present invention are embodiments in which a semiconductor light-emitting element mounting substrate having a base material, a light-reducing layer, and a titanium-containing semiconductor thereon is formed. The substrate is used to mount a semiconductor light emitting element and is made of copper, a copper alloy or an iron-based alloy, and the aluminum reflective layer is provided on the surface side of the substrate on which the semiconductor light emitting element is mounted. At least a part of the metal, which is preferably a substrate, includes a steel or a copper alloy substrate. In addition, as the metal of the substrate plate, a metal alloy such as 42 alloy or iron can be used. Further, the base material may have a metal portion. For example, a copper clad laminate in which copper is bonded to the resin may be used as the substrate. In this case, the resin is formed on the opposite side of the substrate from the surface on which the aluminum reflective layer is formed. Further, 'the surface of the base material on the side opposite to the surface on which the inscription layer is formed may be a surface of a base material including a structure in which the organic material or the inorganic material is composited. [22nd (1) embodiment] 2nd (8) is a view showing a semiconductor light-emitting device mounting substrate according to the embodiment of the 帛22(1) of the present invention, 2 is a substrate, 11 is a metal layer as a side of the first metal layer, 32 201214778 symbol 4 is An aluminum reflective layer formed in a region including a region where the semiconductor light emitting element is mounted on the surface of the substrate 2, and a symbol 19 is a titanium layer which serves as a bonding layer of the aluminum reflective layer, thereby constituting a substrate for a semiconductor light emitting device. The layer 19 is an example of a metal layer containing a chin. The substrate 2 is composed of a metal or a composite material of a metal or an organic material or an inorganic material. For the solder mounting, the general structure of the substrate is a single layer of the alloy, or a composite layer of the Wei and gold materials. The gold 11 (display) is described as an example in this embodiment. As a material of metal, the shaft is the secret, but the most versatile substrate is a metal lead frame made of copper or a copper alloy. In the case where a copper plate is used as the substrate 2, the thickness thereof is not limited, but the thickness can be selected with reference to the cost. Further, in consideration of mass production, a hoop material of a copper plate is preferable, but a short-sized sheet and various materials can also be used. In the case of the wire material 2, a copper clad laminate having a copper plate and a laminated plate can be bonded to the unicorn grease. As the resin, a plate-shaped resin of hard f can be used, and a resin which is thin and flexible can be used. Examples of the synthetic yarns include a glass-oxygen resin substrate (glass cloth base resin sheet) and a polyimide resin line. The aluminum reflective layer 4 and the titanium layer 19 are produced by means of a steam woven fabric having a pressure-reducing force regulating Wei by batch processing or continuous viewing. The thickness of the light-reduction layer 4 is preferably from the viewpoint of the reflectance, and is preferably 2 μm or less from the viewpoint of flatness. When a copper plate is used as the substrate 2, for example, the length is 1 〇〇 m, the width is 5 〇, and the thickness is 0. 2 mm, the thickness of the light-reduction layer 4 is, for example, (10) 5 Å, and the thickness of the titanium layer 19 is 〇 _. At the time of manufacture, first, the tin of the metal layer u (the magnetic mirror of (4) is implemented as the ruthenium of the above-mentioned size of the base material 2. As for the case of tin, it is preferable that it is about one. Next, the resistance heating type is used. The cylindrical electron beam method is vacuum-decomposed to form the titanium layer 19 and the shot-off layer 4. In terms of the body, the substrate 2 is cut into a short-sized material of 5 〇娜15〇聪, and 16 pieces of the cut are cut. The radial lake is placed on the tool of the half (four)·mm peach, and it is placed in the cylinder three sets of 'electron beam grab (transmission god 6kw) as the name, the source of the titanium is 2x a, the thickness is In the present embodiment, the two-air ^ key device uses a self-made machine, and the city (four) inspection device using a load lock type is also no problem. The level of the june, f county _ when _ can. axis, ^ (four) 4 = lack of work spine / h can not be e-beam steaming type. That is, 'can be resistance heating base key method, ion plating method, sputtering method, metal [Claim method, etc.] 33 201214778 [Embodiment 22 (2)] Fig. 20 (8) is a schematic cross-sectional view showing a first substrate of the present invention. When a copper plate is used as the substrate 2, for example, the length is a claw, the width is 50 mm, and the thickness is 0. 2 mm, the thickness of the reflective layer 4 is, for example, 〇 5 μm, and the thickness of the titanium layer 19 is 0·_. At the time of manufacture, first, in the above-mentioned dimensions of the material 2, the plate is prepared to record _ domain layer (10) () · 7 μ ΐ η, 〇. _). Next, a titanium layer 19 and a sputtering layer 4 are formed using a resistance-heated cylindrical electron beam type vacuum vapor deposition apparatus. Specifically, the substrate 2 is chopped into a short-length material of 50 to 150 mm, which is cut. 16 substrates were arranged radially on the ji rig with a radius of 300 mm, and three groups were placed on the _, and the electron beam grab (output power 6 kW) was used as the steam source of Shao and Qin. It is 2xl〇4Pa, and the thickness is 〇~m_reflective layer 4. In the present embodiment, the vacuum evaporation device uses a self-made machine, and the steam-extraction device that is consumed by a load-fired inspection machine or the like is not additionally used, and may be a continuous steaming method capable of inspecting the % hoop material. . Vacuum steaming is a proper choice considering the quality, productivity, etc. Further, the formation of the reflective layer 4 and the titanium layer 19 may not be an electron wire plating method. That is, it is possible to add and subtract Lin, Xuan, Lin, and metal coating methods. The film thickness measurement of the inscription layer 4 and the titanium layer 19 was performed by SMS analysis. From the surface to the surface of the reflection layer, the thickness of the 1/2 plaque of the basal layer is used as the thickness of the reflective layer. The thickness of the titanium layer is the main component to reach the maximum in the basal layer. The thickness of the letter 1/2 of the strength of the county. The above New 2 is Jing, the signal strength of the off. (Evaluation of Examples Related to the Present Embodiment) For the reflective layer 4, the sulphide and the anti-scale are determined as follows. First, as shown in Example 33 to Example 37 of Table 5, on the above-mentioned contact thin, (four) 1 μιη, Through the formation of 钛5 (four) of the titanium layer's description; ίτ method to make the thickness of the reduction layer, the initial reflectivity under the thief wavelength leg. At this wavelength, the sulfuric acid_reflectance is 1%, the reflectance is 9% or more, which is particularly good (indicated by y), and the less than war is a difference (indicated by χ). When the thickness is very thin, that is, when the thickness is G_m or less, the reflectance of the metal of the substrate (here, the handle) is affected: the reflectance is lowered. Then, for the vulcanization characteristics, 3 ppm of postal (hydrogen sulfide) was sprayed at a gas ambient temperature of 4 〇〇c and a humidity of 8 〇% at a rate of 96 、 (according to the industrial standard H85G2 _ 雠 雠Test method test). The vulcanization property is the ratio of the initial reflectance to the reflectance after 96 hours of vulcanization. In the case of a reflective layer, there is no drop to less than 90 relative to the initial reflectance. /. (as a case where the reflectance is less than 81%). In summary, it can be confirmed that the characteristics required for the substrate to be mounted as a semiconductor light-emitting element, that is, the initial reflectance and the vulcanization property (that is, the anti-drunk after the environment in which the lining is vulcanized) are good. The case where the thickness is 0·02 μmη or more. In addition, as a comparative example 3, it was confirmed that the initial reflectance was 93% when the silver layer of only 3 μm was provided on the substrate, and it was good, but the reflectance after the sulfurization resistance test was (10), and it was drastically lowered. Poor vulcanization characteristics. As Comparative Example 32, only a layer of gold was provided on the substrate (〇 7μη〇, ^ (Ο. In the example of ί^μπΟ, it was confirmed that although the vulcanization resistance was good, the initial reflectance was as low as 63% and was X. Incidentally, in Comparative Examples 33 and 34, a nickel layer 17, a palladium layer 18, and a titanium layer 19 were provided in the same manner as in Example 33, and the light-reducing layer thereon did not have sufficient initial reflection characteristics. According to the present embodiment, since the aluminum reflective layer and the titanium layer are formed on the surface of the substrate, it is possible to obtain an unvulcanized, fine, and stable reflective semiconductor device for mounting a semiconductor light-emitting device, and a substrate for using the substrate. . This is Xianglang Langcho Miscellaneous: (4) The reflectivity is more than three times that of silver in ultraviolet light, and has a reflectivity close to silver for purple, red, and infrared rays, and a good balance in color of metal t, which is second only to silver. Reflectivity and difficulty in vulcanization compared to silver. In order to perform wire bonding on the semiconductor light-emitting element mounting substrate, the plasma cleaning was performed. Then, the gold wire was bonded to the semiconductor light-emitting device mounting substrate, and the vulcanization test was performed. As a result, the reflectance was not lowered. From the results, it was found that the surface cleaning was strong and there was no deterioration or peeling. The bonding property with the gold wire was confirmed for the semiconductor light-emitting element mounting substrate formed by the above-described production method. The wire bonding machine uses the Model 4522 of K&s, using a gold wire of diameter 25@ (type C in Tanaka Bay), and using Dage's bond strength testing machine (匕(10)d tester) series 4000 to carry out the tensile strength of the joint characteristics. Test evaluation. The substrate is a copper alloy plated with or without pressure processing (c_194: thickness 〇15mm), nickel (thickness 〇·7μηι) _ (thickness 〇. The base material of 〇5 (4) forms a separate core layer (thickness) and a titanium layer (thickness: 0·1 μ 〇 + 铭 layer (thickness 〇 1 μιη). Table 6 shows the film structure and gold wire The results of the tensile test (10 samples). As shown in Table 6, it is understood that the tensile strength is greatly improved and changed by the order of the substrate, nickel, palladium plating, titanium layer, and aluminum reflective layer 35 201214778. In the case of the titanium layer, the bonding property of the semiconductor light-emitting element mounting substrate with the titanium layer interposed therebetween is improved, and the bonding property is further improved. The main purpose is to increase the yield and soldering conditions at the time of solder mounting of the current introduction terminal after the formation of the LED element, and the nickel-palladium plating layer can be further inserted into the gold flash plating layer (corresponding to 〇〇5 μβι or less after thickness conversion). It was confirmed that the same effect can be obtained even in the order of forming the metal layer 11, the enamel layer, and the aluminum reflective layer which are examples of the base material and the first metal layer. The effect obtained by the above-described 22nd (1) and (2) embodiments can be obtained in the embodiment described later. [23rd embodiment] FIG. 21 is a view showing a semiconductor according to a 23rd embodiment of the present invention. A schematic cross-sectional view of the light-emitting device shows a semiconductor light-emitting device using the semiconductor light-emitting element mounting substrate shown in Fig. 20. In the figure, reference numeral 2 is a substrate, reference numeral 23 is a plating layer of a substrate, and reference numeral 4 is a substrate 2. The aluminum reflective layer formed on one side, and the symbol 19 is a titanium layer, thereby forming a substrate for mounting a semiconductor light-emitting element. In the semiconductor light-emitting device, the two groups (2, 2, 2) are placed close to each other on the same surface. Reference numeral 6 is a semiconductor light-emitting element mounted on the aluminum reflective layer 4A; reference numeral 7 is a bonding wire electrically connecting the semiconductor light-emitting element 6 and the aluminum reflective layer 4? The symbol 8 is a resin-made outer covering portion 'the outer covering portion is not surrounded The substrate 2 Α, 2 包括 including the semiconductor light-emitting element 6 is adjacent to one side, and has a concave portion formed by the inclined surface 8b and the aluminum reflective layers 4 and 8 located at the bottom surface, the inclined surface 8b being formed in the semiconductor The periphery of the element is away from the semiconductor light-emitting element away from the substrate; the symbol 9 is a light-transmissive resin portion filled in the concave portion of the outer package portion 8 and sealing the semiconductor light-emitting element, constituting a part of the outer package. A light-emitting material, for example, can be used for a pseudo white LED device by mixing γ Α (} etc. 'LED wafers with 460 nm GaN-based LEDs. The aluminum reflective layers 4A, 4B, and the titanium layers 19A, 19B are substantially the entire inner side of the outer cladding. The reason for this is that the light emitted from the light-emitting element is reflected in the peripheral peripheral portion. As a specific method, (1) in the film forming apparatus at the time of forming the aluminum reflective layer, (2) a function of shielding the outer surface of the outer covering body; (2) after forming an aluminum reflective layer over the entire surface, masking the outer covering body region by a tapping or photolithography process, and then etching and removing aluminum. Method, 36 201214778 Any of these can be used. According to the gray structure, the conductor hair is placed, and the light incident from the rotating light-emitting element G is reflected by the reflective layer A to the opening of the concave portion through the presence of the surface-reducing layer 4A located in the concave portion of the outer casing portion 8 axis. The σ side exerts an effect of increasing the amount of light from the semiconductor light-emitting device. As described above, '35 has good resistance to vulcanization, so it can be used for a long time_high reflectance. [24th Embodiment] Fig. 22 is a view showing a substrate for a semiconductor light-emitting device wire according to a twenty-fourth embodiment of the invention, characterized in that a recording layer is formed in turn on the two sides of the substrate 2 by a paste-type electrowinning method. The titanium layer 19 and the insole layer 4 are formed on the portion of the layer 18 and the gold flash layer ω on the gold flash layer iq of the surface of the substrate 2. The reason why the nickel layer 17 and the layer 18 and the gold flash bond layer 10 are sequentially formed on the substrate 2 is to ensure the solder-solenability between the substrate 2 and the printed circuit board on which the semiconductor light-emitting device is mounted, that is, to improve烊 接着 。. At this time, the thickness of the recording layer 17 may be 0. 4 1. The thickness of the layer 5μπι18 may be 〇 〇1~〇 2 array, and the thickness of the gold nucleus layer may be Ο. Ϊ́μπια under. These thicknesses are thicknesses which the inventors have confirmed, but may be slightly modified depending on the components to be mounted. The thickness of the reflective layer 4 is preferably 0_G2Mm or more from the viewpoint of light reflection characteristics, and is preferably 2 or less from the viewpoint of flatness. Further, the aluminum reflecting layer 4 and the collecting layer 19 are produced by a batch processing or a Weili county in a steaming apparatus having a pressure reducing function. Linhe (10) 18 Lai-style electric county, vacuum steaming and other dry types can be used to make the quality layer required for this product. Wet money can be applied to all sides (6 sides) of the material, and most of them can be produced at low cost. Therefore, the recording layer and the layer 18 of the present invention are preferably formed by wet plating.曰 It should be noted that the film thickness of the base layer formed by the wet-banking method of the nickel layer 17, the layer 18, and the gold flash layer 10 is calculated by integrating the current value at the time of plating. The thickness of the nickel layer can be changed to a value of α4μηι to 15μηη for the purpose of preventing discoloration of the substrate due to oxidation of steel and improving the operability of the semiconductor light-emitting element mounting base when it is hardened. When the component is mounted on the Rizaki, a good solder wettability is obtained by the partial impurity layer i/ which becomes the connection portion, so that the palladium layer 18 can be provided. As the palladium layer 18, its thickness is mostly Ο. ΟΙμηι~0·2μιη, the thickness is determined according to the welding conditions. Further, the effect of the present embodiment is that by using aluminum as a reflective layer, high reflectance can be secured. Further, by using 0. The aluminum reflective layer 4 having a thickness of 02 μm or more has good durability. In addition to the effect of the transition rate, the effect of the New Wave. In other words, the plurality of layers 18, 61H, and 17 can be used to continue the main material of the substrate 2, and the above numerical range improves the wettability of the sound-absorbing layer and the material-free material, and the numerical value is increased. The welding of the health can be long. That is, by forming each of the configurations, a structure suitable for welding can be obtained. [25th embodiment] Fig. 25 is a schematic cross-sectional view showing the conductor registration of the present invention. The semiconductor light-emitting device mounting substrate shown in Fig. 22 and the outer casing of Fig. 21 are divided into 8 The same parts as those of the second embodiment and the same reference numerals are denoted by the same reference numerals. When a steel sheet is used as the substrate 2, for example, the length is 1 μm, the width is 5 mm, and the thickness is 〇. 2mm steel plate, on the surface of the substrate 2 by wet plating method, the thickness is 1 ς ς 锦 layer 17 thickness 〇. The layer μ and thickness of ipm are o. Oigm's gold flash layer is 1 〇. Further, the portion for the surface of the gold flash plating layer 1 followed by the titanium layer 19A, 19B and the aluminum reflective layer 々A, is used, and the portion used as the reflective film is partially bonded, and no solder joint is obtained. !S layer, material in the part used for reflection. Then, the punching machine and the frame shape for mounting the semiconductor light-emitting element were fabricated, and the two groups (from the accomplice and the guilty) were arranged close to each other. Then, a resin-made outer covering portion 8 which surrounds the portion where the base materials 2A, 2B are close to each other and which has a recess in which the periphery of the semiconductor light-emitting element 6 is previously excavated is formed. Next, the semiconductor light-emitting device 6 was mounted with a conductive paste, and the surface electrode and the lead frame were joined by gold bonding. Finally, a light-transmissive resin (such as enamel resin) is filled in the concave portion of the outer covering portion 8 to cover the semiconductor light-emitting element 6, thereby forming a translucent resin portion 9 as a part of the outer covering. In the above description, the "semiconductor light-emitting element mounting substrate is produced" and then formed into a predetermined shape by a press machine, but a post-plating method may be used. That is, after the base material 2 is molded into a predetermined shape, each plating layer (10, 17, 18) is formed on the substrate by wet plating, and the aluminum reflective layer 4 and the titanium layer are formed by dry plating such as vacuum deposition. 19. Further, the case where the base material 2 is made of copper will be described, but a base material provided with a copper wire on a resin or the like can be used. Further, other metal substrates such as an iron-based 42 alloy may be used in view of use, cost, and the like. Further, it is possible to form a wiring by using a printed circuit board or a flexible wiring board forming step, and then forming an aluminum flip 38 201214778 shot layer 4 and a titanium layer 19 to be used. In this way, depending on the purpose, structure, material (copper plate or flexible flexible resin substrate), the shape can be changed (made by shapes such as punching, bending, and bulging), and electric ore, The order of steaming. The semiconductor light-emitting element 6 of the women's wear can be mounted with an LED chip such as GaAs-Si-LED, AKJaAsiED, GaP_LED, AlGalnP-LED, InGaN-LED or the like. Further, the semiconductor light-emitting element 6 shown in Fig. 13 is an element in which the electrodes of the top surface and the bottom surface face in the longitudinal direction, but is not limited thereto, and may be an LED having a planar structure of the same electrode (for example, (4) In the case of a planar structure in which the electrodes form a closed-surface, there is a case where the electrode faces the wire surface side (upper side in the drawing) and the anode is wire-bonded; the 丨 electrode surface faces downward (the lead frame side) In the so-called flip chip mounting method of direct connection, any mounting method can be used. Copper wire bonding and aluminum wire bonding can be used instead of gold wire bonding. Further, in this embodiment, a gold flash plating layer is applied. The substrate, about gold at a coarser pitch (eg G. In the case of a 5 mm pitch, that is, in the case where the precision is not high, the gold flash plating layer 10 can also bring a high yield, so it can be omitted. The palladium layer 18 can be omitted as long as the thickness of the metal layer can be ensured and sufficient solder wettability can be obtained. According to the semiconductor light-emitting device having such a configuration, similarly to the semiconductor light-emitting device shown in Fig. 21, the light emitted from the semiconductor light-emitting element 6 is transmitted through the presence of the insole reflective layer 4A located on the bottom surface of the concave portion formed in the outer cladding portion 8. The reflection from the inscription layer 4A to the opening side of the concave portion exerts an effect of increasing the amount of light from the semiconductor light-emitting device. Further, since the aluminum reflective layer 4A has good light reflection characteristics, it is possible to maintain high reflectance for a long period of time. [Embodiment 26] FIG. 24 is a cross-sectional view showing a semiconductor light-emitting device mounting substrate according to a twenty-sixth embodiment of the present invention. This embodiment is a modification of the semiconductor light-emitting element mounting substrate shown in FIG. 22, and FIG. 24(a) shows that the nickel layer 17, the palladium layer 18, and the gold flash layer 1' are formed only on one surface of the substrate 2. Gold flash deposit layer 10. A part of the upper portion forms an example of the titanium layer 19 and the insole reflective layer 4; and FIG. 24(b) shows a part of the shaped gold layer 19 on the gold flash ore layer 1 formed on the surface of the substrate 2, and the inscription layer 4' An example in which a portion is bent upward by approximately 9 degrees on the paper surface; Figure 24 (4) shows the formation of the recording layer 17 on the entire surface of the substrate 2, and the layer 18 of the spear gold amphibole layer 1 The aluminum reflective layer 4 and the titanium layer 19 are formed on the entire surface of the layer 1 , and a part is bent upward by 18 degrees on the paper surface. FIG. 24 ( 4 ) shows that the aluminum reflective layer 4 and titanium are directly formed on one surface of the substrate 2 . Layer 19, an example of forming a nickel layer 17, a palladium layer 18, and a gold flash layer (1) on the other side of the base 39 201214778 material 2. The semiconductor flying element mounting substrate shown in the 24th ffi (a) may be configured by forming a nickel layer w having a thickness of a thin layer on one surface of the substrate 2 made of steel by an electric ore method. The thickness is Ο. ΟΙμηι _ layer 18, and a gold amphibole layer having a thickness of 〇 1 μm is formed, and then a layer 19 is formed on the upper portion of the gold flash layer 10, and the layer 4 is subtracted (4). Incidentally, as in this example, the layered recording, Ιε, gold, and the like are sequentially deposited on the substrate, and the sewable plating method can be sewed in addition to the light-reducing layer. The thief shot layer 4, the titanium layer 19, and now the wet type electric ore method can not accommodate (4) Wei' so vacuum test can be used. As another method, for example, a money plating method using an inert gas jet can be utilized. In addition, many of these methods can be used from the viewpoints of cost, simplification of the process steps, and the like. The semiconductor substrate of the semiconductor light-emitting device of the 24th (b) is sequentially formed on the substrate 2 by a key method to have a thickness of 1. 5μηι's riding raft, by the test method to form a thickness of Q 2 called _ layer 18, forming a thickness of Ο. After the gold ore layer 10 of ΐμτη, an aluminum reflective layer 4 and a titanium layer 19 are formed on a part thereof. The substrate for mounting a semiconductor light-emitting device shown in Fig. 24(c) is sequentially formed on the substrate 2 by a mineralization method to have a thickness of 1. 5μηι _ layer 17, with the thickness of the plating method is Q 2 哗 _ layer 18, forming a thickness of Ο. After the gold layer 1G of ίμιη, the entire surface layer 19 is formed as the shot layer 4. These examples are a method of using a top surface of the semiconductor light-emitting element filament layer 19, |g reflective layer 4, and performing wire bonding on the bottom surface or side surface of the substrate 2. More specifically, it is a structure which can be 1 M when the base material 2 is bent. Shu Gang, in the actual sealing towel, is bonded to the back surface of the substrate 2, but the nickel layer 17, the palladium layer 18, the gold flash ruthenium or the like may be coated on the back surface depending on the purpose. The semiconductor light-emitting element mounting substrate shown in Fig. 24(d) is similar to Fig. 24 (in the case of the core, the recording layer 17, the layer 18, and the gold flash layer 10 are applied only to one side of the substrate 2, so The amount of use of these metals is suppressed. When only one side is subjected to electric forging, the two substrates are bonded together and enter the electro-recording step 'and then separated, so that the reflective layer 4 and the layer can be achieved without the masking material. Since the thickness is easily affected by the reflectance of the substrate as described above, it is preferably 0. 02 μm or more. Although the aluminum reflective layer 4 and the titanium layer 19 are formed over the entire surface, they may be partially formed. The structure of the aluminum reflective layer 4 and the titanium layer 19. After the semiconductor-emitting two-element mounting substrate shown in Fig. 24(d) is formed, the end portion of the substrate (also referred to as a substrate connecting lead and an external lead) can be used. It is used in a predetermined shape. For example, the bottom surface of the portion of the outer surface of the substrate (external wire) is bent to be in contact with the top surface of the printed circuit board, and the structure can be used when it is connected to the substrate. That is, the central portion of the substrate is used as a subtractive layer The bottom surface of the end portion of the base material is an outer lead wire, and the surface on the nickel-palladium side is connected to the printed circuit board. [27th embodiment] FIG. 25 is a view showing a substrate for mounting a semi-laid light-emitting element according to a twenty-seventh embodiment of the present invention. The structure of this embodiment is as follows: on both sides or one surface of the substrate 2, an alloy selected from the group consisting of (Pd), gold (Au), tin (Sn), nickel (10), steel (Cu)-tin (Sn), A single-layer metal layer 11' in a copper (Cu)-nickel (10) alloy forms a titanium layer 19 and a reflective layer 4 on the metal layer U or the substrate 2. (8) indicates that a metal layer u is formed on both surfaces of the substrate 2, An example of forming the smear layer 19 and the smear layer 4 on a portion of the metal layer of one side; (8) means forming a metal layer n on one side of the substrate 2, and forming a titanium layer 19 on the portion of the metal layer 11, and reflecting An example of the layer 4; (6) shows an example in which the metal layer 11 is formed on the surface of the substrate 2, and the titanium layer 19 and the reflective layer 4 are formed on the other surface of the substrate 2. The Barbie copper has an antioxidant wire and has a fine Advantages of welding for welding; tin has the advantage of being easy to weld and inexpensive, but has the disadvantage of being slightly oxidized. Copper-tin Gold is more oxidized than copper 2, and has the advantage of dense tin fusion compared with tin and copper. Copper age gold has the advantages of easier than recording and tin. According to the characteristics of the material, it can be selected as metal according to the secret parts and manufacturing conditions. [Embodiment of the layer 11] [Embodiment 28] - Fig. 26 is a schematic view showing a semiconductor light-emitting device mounting substrate according to a twenty-eighth embodiment of the present invention. A working place or a plurality of gold plating layers 12 are formed on the reflective layer 4. Fig. 26(a) shows an example in which a gold deposit layer 12 is formed on a portion of the titanium layer 19 and the aluminum reflective layer 4; and 26th_ indicates a partial formation The gold layer 12 on the outer side of the layer of the reflection layer 4 is formed with a gold plating layer 12 _ sub; the figure 26 (4) represents the entire surface layer of the glazed layer 12 on the layer 19 and the surface of the reflection layer 4; _ indicates an example in which the gold plating layer 12 is formed on the entire surface of the gold layer 1 of the shape of the brain layer 19 and the reflective layer 4; the (fifth) figure (8) is a rotating (four) optical device for mounting the silk plate without using the county conductor light-emitting element. A schematic cross-sectional view of an example of an embodiment. In these embodiments, a recording layer n, a layer 18, and a gold layer 1G are sequentially formed on the entire surface of the substrate 2, but are not limited to scales, as described above, and may also be applied to form a single layer. In the case of the metal layer U, the case layer 19 and the surface reflection layer 4 are directly formed on the substrate 2. 41 201214778 The Fengshui Laijin layer 12 can be used to install the ΐ=ϊΐΠΓ connection on the sister layer 19 and the subtraction layer 4. _ turn, the domain length (blue) side _ rate is lower,. According to the position, the structure of the anti-material layer 12, that is, I 3 = is formed in the respective mines _, 12, 17, _ by the wet electric ore method, or may be [the 29th embodiment] As a twenty-ninth embodiment of the present invention, a semiconductor hairpin:=3 is shown. In the semiconductor light-emitting device according to the present embodiment, the substrate for mounting the conductor light-emitting element is mounted on, for example, a printed circuit board, and the bottom surface of the outer surface of the light-emitting element mounting substrate 1 is substantially flush with the surface of the printed circuit board. Below the bottom

Γ^^Τ!"^ 13 ° ^ - «(a) ^ .II SI疋The outer wire _ 9 turns downward, and then bends it in the opposite direction 9〇, so that the extension direction of the outer wire does not change. And the horizontal position is substantially the same as the bottom surface of the outer-body blade; the 27th_) indicates an example of forming a partial.

1b疋 The outer wire is folded 90 degrees twice along the outer surface of the outer body portion 8f; the 27th _ is an example of forming the part le, the sub-====3=the opposite direction is along the outer_minute 8 bends (four) degrees two Secondly, the limit of each __^_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ (4) 峨 丝 《 《 板 板 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上, and the wire is joined by the gold:: line ί = line. Here, the hybrid means that the electrode is electrically connected to the component of the wire _' lead frame, and is connected by gold or the like. The bonding refers to a bonding in which a wire having a tip end of a wire is formed into a ball by discharge. The bonding is generally performed in the first embodiment in the present embodiment in view of positional accuracy and pressure contact property. On the _substrate 'the same as the third embodiment is provided with a portion of the subtractive layer bonded to discharge the line The tip is formed into a spherical shape. The second joint means that the electrode on the element side is joined to the electrode on the lead frame side to be connected by the above-mentioned wire at a predetermined position. In the present embodiment, on the substrate of copper, The portion in which the aluminum reflective layer is provided in the same manner as in the twenty-second embodiment is bonded to the wire end by frictional adhesion. Table 8 shows the relationship between the carbon concentration in the aluminum reflective layer and the bonding strength of the gold wire. 38. A product obtained by forming a nickel with a thickness of 0.05 nm and a palladium of 0.5 nm on a steel substrate having a thickness of 〇15 mm by a wet electric ore method, and a 3-layer glass having a thickness of 〇5 mm. An epoxy resin substrate is fixed with a heat-resistant acrylic resin adhesive to form an embodiment of a circuit board for a light-emitting device. The material is mounted on the vacuum inspection device to form a G-th layer and a 0.2μηι reflection; f, SIMS analysis. Here, the carbon concentration in the reflective layer is the minimum concentration of carbon in the aluminum reflective layer. The carbon in the riding is 3xlG2 m paper m3. The polyimide film is 125 μm thick. The surface is formed by wet plating 7 (^m A copper substrate, a nickel layer of 0·7 μηι, and a crucible of a heat-resistant acrylic resin adhesive of the obtained product were bonded to the substrate of Example 39 to form a sheet material. In Example 39, After forming the aluminum reflective layer, the wiring material was formed by punching out unnecessary portions by press working. Similarly, the carbon concentration in the inscription layer of Example 39 was 1%, SIMS pure, and the wire!g domain layer_carbon was 1x1g2G. Example 40 is a method of forming a recording layer of 〇7μηη on a copper-containing copper alloy by wet electro-minening, and then splicing and curing the 〇〇5_ and then vacuum-depositing the obtained product. In the apparatus, a good steel (SUS304) mold jig was used to fix 'the titanium layer 19 of the 〇1μηη, and the etched layer* of the 〇2 post. The carbon concentration in the aluminum reflective layer of Example 40 was 3 χ 1 〇 19 / cm 3 . In Example 38, the thickness of (10) was 〇_1μηι, but if the thickness of the titanium layer was α or more, it was possible to obtain a clear-like yarn. However, considering the qualitative (4) nature of the Lai process, the thickness of Lang is preferably more than 5 divisions. Further, when the thickness of the enamel layer is 〇 2 μηι or more, the flatness is gradually lowered, so the thickness of the titanium layer is preferably 0.2 Å or less. As the evaluation scale, the first joint strength is a case where G39N or more (four) cut strength is used as 〇 ', and less than 0.39N is taken as X. The second joining strength is a case where the shear strength of 〇 〇 or more is taken as 〇, and a case of less than 0.049 N is taken as X. It can be seen from Table 8 that the carbon concentration of the reflective layer is 3_2. When w or more, the joint strength is lowered at 23 201214778, preferably S lxio is 20 or less. In the present embodiment, since an organic material such as an epoxy resin material or an acrylic pressure-sensitive adhesive is used, the carbon concentration in the aluminum reflective layer increases, and as a mixed source of carbon, contamination of the substrate can be considered. Various factors such as reverse diffusion of the flushing gas vacuum pump oil and impurities of the sputtering gas when using the sputtering method. In the bonding test, the wire bonding machine was carried out using a MODEL77GGD of WEST bond INC. using a gold wire having a diameter of 25 μm, and a bonded cake having a supersonic intensity of 35 QmW and an ultrasonic application time of 1 GGms. It was carried out in the shear test mode of the joint tester PTR-1 of the company. The SMS measurement was carried out using the pm company ADEPT1G1G, and the filament as a 1-read source was implemented with an acceleration energy of 3 keV. [31st embodiment] Fig. 28 is a schematic cross-sectional view showing a semiconductor light emitting device according to a 31st. embodiment of the present invention. This embodiment is characterized in that the semiconductor light-emitting element 6 is mounted on the light-reduction layer 4, and the substrate 2B, 2C for supplying the wire (4) to the semiconductor light-emitting element 6 for wire bonding or (4) wire bonding is not provided with the insulating layer 4. In the case of the wire bonding tip, the inscription layer 4 may be provided. However, when the reflecting layer 4 is not provided, the surface conditions of the substrates 2B and 2C are optimized, and the range of bonding conditions is expanded, and the assembly speed and the yield are good. . Fig. 28 shows an example in which the base material 2A of the mounting portion of the semiconductor light-emitting element 6 and the ore layer (3, 1) of the base materials 2B and 2C have the same structure, but the structure of the plating layer of the base material of 2A, 2B, and 2C is shown. It can be different or it can be divided. Further, Fig. 28 shows a case where the lower portions of the base materials 2A, 2B, and 2C are covered with a resin, but the entire surface or the portion of the back surface of the base material 2A, 2B, and $ can be exposed on the back surface. The exposed portion is further connected to a metal heat release plate or the like by soldering or the like so that the heat release property can be increased and the light output power can be increased. Further, when the semiconductor light-emitting element 6 having the back surface electrode is used, the (four) power supply terminal is connected to the upper electrode, and the plurality of power supply terminals connected to the upper electrode can be used for wire bonding. At the time of the root, it is easy to perform wiring arrangement at the time of large current drive and wiring arrangement between light-emitting devices, and it is used separately. The 28th diagram does not align the connection between the electrode portion of the light-emitting element and the power supply terminal. In the case of the connection, it is also possible to manufacture a sacred wire, and to perform a connection of a wedge-wound connection, which uses ultrasonic waves to connect the shackles, and uses a supersonic wave to heat the connection. > As described above, the inventors have learned that the carbon concentration in the |g reflective layer greatly affects the bonding strength of the gold wire and the 35 reflective layer of 201214778. It should be noted that this applies to all of the embodiments described above. The representative structure of the substrate for mounting a semiconductor light-emitting device of the present invention and the semiconductor light-emitting device using the same is not limited to the configuration example of the present invention, and various modifications are possible within the scope of the technical idea of the present invention. structure. As the terminal for power supply, the surface constituting material of the base material 2B, 2C for wire bonding or internal wire bonding may be one selected from the group consisting of gold, silver, palladium, gold alloy, silver alloy, or palladium alloy, or a combination thereof. Further, the constituent elements of the above-described respective embodiments may be arbitrarily combined within the scope of the gist of the invention. (32th to 38th Embodiment) The semiconductor light-emitting device mounting substrate and the semiconductor light-emitting device according to the embodiment of the present invention are configured to mount a semiconductor light-emitting device having a substrate, an aluminum reflective layer, and a silver layer or a silver alloy layer therebelow. The solid-state type of the substrate is mounted on a semiconductor light-emitting element and is made of copper, a copper alloy or an iron-based alloy, and the brain reflection layer is provided on at least a part of the surface 2 of the wire-conducting light-returning element of the wire. [32nd embodiment] FIG. 29 is a cross-sectional view showing a substrate for mounting a semiconductor light-emitting device according to a 32nd embodiment of the present invention, wherein reference numeral 2 denotes a substrate, and reference numeral 4 denotes a semiconductor light-emitting device mounted on one surface of the substrate 2. The aluminum reflective layer formed in the area of the space, the symbol 19 is the layer of the layer, which is composed of a metal or a composite material of an organic material or an inorganic material. Mainly for soldering, the substrate 2 is coated with a silver layer or a silver alloy layer 3. The material of the substrate 2' as the metal of the substrate 2 is not limited thereto, but the most versatile substrate 2 is a metal lead frame made of copper or a copper alloy. In the case where a copper plate is used as the substrate 2, the thickness thereof is not limited, but the thickness can be selected with reference to the cost. In addition, in consideration of mass production, a ring of a steel plate is preferable, but a short material of #材 and various materials can be used for the case of using a composite material as the base material 2, and a steel plate can be bonded to the resin material. CCL, its laminated board. As the resin, a hard plate-shaped resin and a resin which is thin and flexible can be used. Examples of the representative resin include a glass epoxy resin substrate (glass cloth substrate resin plate) and a polyimide resin substrate. The aluminum reflective layer 4 and the titanium layer 19 are produced by a batch processing or a continuous treatment using a vapor deposition apparatus having a pressure reducing pressure regulating function. The thickness of the aluminum reflective layer 4 45 201214778 is preferably 0.02 μηι or more from the viewpoint of reflectance. When the steel alloy material C_194 is used as the substrate 2, for example, the length is 1 μm, the width is 50 mm, the thickness is 0.15 mm, the thickness of the aluminum reflective layer 4 is, for example, 〇05 μm, and the thickness of the titanium layer 19 is Ο.ίμηι. . In the case of a copper plate of the above-described size as the substrate 2, a silver layer or a silver alloy layer (thickness: 3 μm) 3 was prepared by a wet ore method. Next, the aluminum reflective layer 4 and the titanium layer 19 were formed using a resistance heating type cylindrical electron beam type vacuum evaporation apparatus. Specifically, the substrate 2 is cut into a short size material of 50 mm×150 mm, and 16 pieces of the cut substrate are radially arranged on an umbrella-shaped mold jig having a radius of 300 mm, and three groups are arranged on the cylinder. An electron beam grab (output power of 6 kW) was used as a vapor deposition source for the inscription and titanium, and the exhaust gas was evacuated to a degree of vacuum of 2 x 10 〇 4 Pa to form a reflective layer 4 having a thickness of 0·05 μm. In the present embodiment, the vacuum vapor deposition apparatus uses a self-made machine, and the use of a load lock type inspection machine or the like also has no problem. In addition, the _ vapor deposition apparatus m which can be inspected for the ring ride may be appropriately selected in consideration of the film quality, the productivity, and the like. and then,! g anti-riding 4, the formation of the titanium layer 19 can be carried out without the electron beam inspection method, that is, the paste resistance heating test, the ion ore method, the forging method, the metal coating method, and the like. The film thickness measurement of the inscription layer 4 and the titanium layer 19 was performed by SIMS analysis. The thickness of the base titanium layer 19 immediately below the surface from the surface to the reflective layer 4 reaches a signal intensity of 1/2 of the maximum intensity as a reflection of the thickness of the gate 19, and the thickness of the gate 19 is the main constituent element in the base layer. The maximum intensity of 1/2 of the signal strength when thickness. In the case of the above silver layer or silver alloy layer 3, the signal intensity ratio of silver is used. (Evaluation of Examples Related to the Present Embodiment) For the insole layer 4, the vulcanization characteristics and the reflectance were determined as follows. First, as shown in Table 9, a silver-plated material was applied to the steel material to make the reflective layer 4 by the above method, and the rhyme was dried in the atmosphere for 3 hours. Then the thief, 4 hours of heat treatment. After the heat treatment, the initial reflectance at a wavelength of 46 〇 nm was measured. At this wavelength, the sulfuric acid lock t i' has a reflectance of 9 % or more as particularly good (indicated by . ) and will be less than 90 /. As a difference (represented by χ). , for the vulcanization characteristics, the formation of the thickness of the 反射. ίμιη of the reflective layer 4, the layer of 19 Γ 3 _ (sulphur nitrogen) exposed to gas ambient temperature 4 〇 t, humidity 80% (according to Japanese Industrial Standards Delete) 2 Tests for the test method of the electric ore mine 46 201214778). The vulcanization resistance is the ratio of the initial reflectance to the reflectance after 48 hours of vulcanization. As a result, it was found that the initial reflectance was 92%, and the reflectance after the sulfurization resistance test was 87%, which was a good β. As the example 44, it was confirmed that the thickness on the substrate 2 was 3 qing. The substrate of the aluminum reflective layer 4 having a thickness of Ο.ΐμπι is not subjected to heat treatment. The initial reflectance is 91%, which is good, and the reflectance ratio after the resistance test is 98%. , good vulcanization characteristics. As a comparative example 45, it was confirmed that the substrate (i.e., Example 44) in which the aluminum reflective layer 4 having a thickness of 0.1 μm was provided on the silver layer/silver alloy layer 3 having a thickness of 3 μm on the substrate 2 was carried out under the above-mentioned conditions. In the case of heat treatment, the initial reflectance decreased to 62%, and was ><>, and the sulfuric acid reflectance ratio was lowered to 55%. According to Example 44 and Comparative Example 45, in the case of heat treatment in the examples, copper was diffused on the surface of the semiconductor light-emitting device base material substrate, and the initial reflectance and the sulfurization resistance were deteriorated (heat resistance was deteriorated), and titanium was provided. In the case of a layer, high heat resistance can be maintained by forming a diffusion barrier of steel. According to the present embodiment, since the aluminum reflective layer 4 and the titanium layer 19 are formed on the surface of the substrate 2, a semiconductor light-emitting device mounting substrate which is unvulcanized and has high and stable reflection characteristics for a long period of time can be obtained and the substrate can be used. Semiconductor light emitting device. This is the use of the following characteristics of aluminum: the reflectivity of aluminum is up to 3 times higher than that of silver in ultraviolet light, and has a reflectivity close to silver for purple, red, and infrared rays. 'In the metal, the color (10) is well balanced, with only: Silver has a high reflectance and is less susceptible to vulcanization than silver. In order to wire-bond the substrate for mounting a semiconductor light-emitting element, argon plasma is cleaned and then the gold wire is bonded. The semiconductor light-emitting element (4) substrate was tested by Wei Test, and the reflectance decreased. From this result, it was confirmed that the resistance to surface cleaning was strong without deterioration or peeling. The semiconductor light-emitting element mounting substrate 3 formed by the above-described production method is subjected to bonding characteristics with gold wires. The wire bonding machine was subjected to a test evaluation of the tensile strength of the joint characteristics using a gold wire of 25 μmη (manufactured by Tanaka Kiyoshi's typeC) using a model No. 4522 of K&S. The base village is a base material on a drum-processed copper alloy (C-194 ··thickness 〇.15 mm), and an inscription layer 4 in which a titanium layer 19 + 0.1 〇 of 〇 _ is formed. Table 7 shows the results of the film construction and the gold wire tensile test. As shown in Table 7, it is understood that the tensile strength shows practically sufficient strength by inserting the titanium layer 19 between the silver layer or the silver alloy layer 3 on the copper substrate and the aluminum reflective layer 4. 47 201214778 It should be noted that although the degree is poor, the effects obtained by the above-described 32nd embodiment can be obtained also in the embodiment described later. [Thirty-third embodiment] FIG. 30 is a schematic cross-sectional view showing a semiconductor light-emitting device according to a thirty-third embodiment of the present invention, and shows a semiconductor light-emitting device using the semiconductor light-emitting element mounting substrate shown in FIG. In the figure, 'the symbol 2 is a substrate, the symbol 3 is a silver layer or a silver alloy layer of the substrate 2, the symbol 4 is an aluminum reflective layer formed on one surface of the substrate 2, and the reference numeral 19 is a titanium layer, thereby forming a semiconductor. The light-emitting element mounting substrate 1. In the semiconductor light-emitting device 5, two sets (2A, 2B) are used in close proximity to each other. Reference numeral 6 is a semiconductor light emitting element mounted on the aluminum reflective layer 4; and reference numeral 7 is a bonding wire for electrically connecting the semiconductor light emitting element 6 and the aluminum reflective layer 4. Reference numeral 8 is a resin outer covering portion which surrounds one side of the base material 2A, 2B not including the semiconductor light emitting element 6, and has a concave portion 8a formed of the inclined surface 8b and the aluminum reflective layer 4 located at the bottom surface, The inclined surface 8b is away from the semiconductor light emitting element 6 as it goes away from the substrate 2 around the semiconductor light emitting element 6; the symbol 9 is a light transmissive resin portion which is filled in the concave portion of the outer covering portion 8, for example, and seals the semiconductor light emitting element 6. To form part of the outer body. The phosphor material can be mixed in the outer body portion 8. For example, by mixing YAG or the like, an LED wafer can be used for a pseudo white LED device using a 460 nm GaN-based LED. The aluminum reflective layer 4 and the titanium layer 19 may be formed on substantially the entire inner surface of the outer cladding or by removing a part of the remaining portion. The reason for this is that the light emitted from the semiconductor light emitting element 6 is reflected in the outer envelope portion 8. . As a specific method, (1) a film forming apparatus at the time of forming an aluminum reflective layer is provided with a function of externally covering the outer covering region; (2) after forming an entire surface as an emitting layer, the outer covering portion is pasted. Any method such as masking or photolithography, and then etching and removing aluminum may be used. > According to the semiconductor light-emitting device 5 of this configuration, the presence of the bottom surface_reflection layer 4 of the concave portion 8a formed by the outer cladding portion 8 is passed, and the light emitted from the semiconductor light-emitting element 6 is reflected by the reflection layer 4 to the concave portion 8a. The opening side exerts an effect of increasing the amount of light from the semiconductor light-emitting device 5. As described above, it has good resistance to vulcanization, so that high reflectance can be maintained for a long period of time. In the above description, the semiconductor light-emitting element mounting substrate 1 is formed, and then formed into a predetermined shape by etching using a punch or 48 201214778. However, a post-plating method may be used. In other words, after the base materials 2A and 2B are formed into a predetermined shape, the silver layer or the silver alloy layer 3 is formed on the base materials 2A and 2B by wet plating, and the aluminum reflective layer is formed by a dry plating method such as vacuum deposition. 4. Titanium layer 19. The silver layer or the silver alloy layer 3 can also be formed by a dry plating method such as a vacuum deposition method by a wet method. Further, the case where the base material 2A, 2B' is made of copper will be described, but a base material provided with a steel wire on a resin or the like may be used. Further, other metal substrates such as an iron-based 42 alloy or the like can be used from the viewpoint of use, cost, and the like. Further, the wiring layer can be formed by a printed circuit board or a flexible wiring board forming step, and then the titanium layer 19 and the aluminum reflective layer 4 can be formed and used. In this way, depending on the purpose, structure, and material (steel plate or flexible resin substrate having flexibility), the shape can be changed (by the shape of punching, bending, or bulging), plating, and evaporation. order of. The mounted semiconductor light emitting element 6 can be mounted with an LED chip such as GaAs-Si-LED, GaP_LED, AlGalnP-LED, InGaN-LED or the like. Further, the semiconductor light-emitting element 6 shown in Fig. 30 is a vertical element of the electrodes of the top surface and the bottom surface. However, the present invention is not limited thereto, and may be an LED (e.g., GaN-based) having a planar structure in which a pair of electrodes are formed on the same surface. In the case where the electrode is formed on the same plane structure, the electrode surface faces the surface side (upper side in the drawing), and both the cathode and the anode are wire-bonded; the electrode surface faces downward (on the lead frame side) and directly The so-called flip-chip mounting method of the connection can make the secret-installation method. It is also possible to use copper wire bonding and aluminum wire bonding instead of gold wire bonding. According to the semiconductor hairpin 5 of this configuration, the light emitted from the semiconductor light-emitting element 6 is reflected by the reflective layer 4 to the concave portion 8a by the presence of the light-reducing layer 4 on the bottom surface of the concave portion 8a formed by the contact-coated portion 8. The opening side exerts an effect of increasing the amount of light from the semiconductor light-emitting device $. In addition, since the shot-preventing layer 4 has good light-reflecting, the high-reflection can be maintained between the oblique portions. [34th Embodiment] FIG. 3 is a view showing the semiconductor light-emitting device mounting substrate according to the 34th embodiment of the present invention. In the semiconductor light-emitting device mounting substrate shown in Fig. 29, the 3/Acacia<^>> FIG. 31 (8) table not only forms a silver layer or a silver alloy layer or a part of the silver alloy layer 3 on one surface of the substrate 2. An example in which the titanium layer 19 and the insole reflective layer 4 are formed thereon. The graph () shows that the titanium layer 19 and the aluminum reflective layer 4 are formed on a portion of the silver layer or the silver alloy layer 3 formed on the surface of the substrate 2, An example in which a portion is bent upward by approximately 9 degrees on the paper surface; and in the 31st (c) table, the titanium layer 19 and the aluminum reflective layer 4 are not formed on the entire surface of the silver layer or the silver alloy layer 3 of the substrate 2, and a part thereof An example in which the paper surface is bent 180 degrees upward; the 31st image shows that the titanium layer 19 and the aluminum reflective layer 4 are directly formed on one surface of the substrate 2, and the nickel layer 17 and the palladium layer 18 are formed on the other surface of the substrate 2. And examples of gold flash plating 10. The semiconductor light-emitting element mounting substrate shown in Fig. 31 (a) may be configured such that a silver layer or a silver alloy layer 3 having a thickness of 3 μm is formed on one surface of a substrate 2 made of copper by plating. For the layer or the silver alloy layer 3, the titanium layer 19 and the ruthenium layer 4 are formed by a ship method. It should be noted that when silver, titanium or aluminum is sequentially formed on the copper base material 2 as in this example, the silver layer or the silver alloy layer 3 may be dry, but a wet plating method may be used. The silver layer or the silver alloy layer 3, the titanium layer 19, and the aluminum reflective layer 4 cannot be easily plated by wet plating at this time, so that a vacuum collision method can be employed. As another method, for example, a surface method in which an inert gas jet can be applied can be used. In addition, many of these methods can be used from the viewpoints of cost, simplification of the process steps, and the like. The semiconductor light-emitting element mounting substrate shown in Fig. 31(b) is formed by sequentially forming a silver layer or a silver alloy layer 3 having a thickness of 3.0 μm on the substrate 2 by electroplating, and then forming a titanium layer 19 and aluminum reflection on a portion thereof. Layer 4 is formed. The semiconductor light-emitting device mounting substrate shown in Fig. 31(c) is formed by forming a silver layer or a silver alloy layer 3 having a thickness of 3.0 μm on the substrate 2 by electroplating, and then forming a titanium layer 19 and aluminum reflection on a portion thereof. Layer 4 is formed. These examples are a method of attaching a semiconductor light-emitting device to the titanium layer 19, the top surface of the reflective layer 4, and performing wire bonding on the bottom surface or side surface of the substrate 2. More specifically, it is a structure which can be applied when the base material 2 is bent. In the present embodiment, the wire bonding is performed on the back surface of the substrate 2. However, the silver layer or the nickel layer 17, the layer 18, the gold glitter layer, or the like may be coated on the back surface depending on the visual force. [35th embodiment] Fig. 32 is a schematic cross-sectional view showing a semiconductor light emitting element mounting substrate according to a 35th embodiment of the present invention. This embodiment is characterized in that a - or a plated surface U is formed on the silver layer or the silver alloy layer 3, the seed layer 19, and the inversion layer 4. The third _ indicates an example in which the gold plating layer 12 is formed on the silver layer or the silver alloy layer 3, the titanium layer 19, and the shot layer 4; the 帛32 just indicates the outer layer of the partial protective layer I9, the ig reflective layer 4. An example of the formation of the gold layer 12 on the silver layer alloy layer 3; (c) shows an example in which the gold layer U is formed on the entire surface of the titanium layer 19 and the inscription layer 4; the 32®(d) surface An example in which the gold plating layer 12 is formed on the entire surface of the titanium layer 19, the silver layer of the toe ride 4 or the silver alloy 50 201214778 layer 3 is formed. The gold plating layer 12 in the 3 embodiment can be used for the electrical connection of the light-emitting member mounted on the titanium layer 19 and the aluminum reflective layer 4. The thicker the gold layer u, the better the reflection rate of the short-wavelength (blue) class is. Root _ way, the reference reflectance to determine the structure of the age layer 12 & It should be paid. The gold layer 12 is formed by a wet plating method, and may be formed by others. [苐36 Embodiment] A semiconductor light-emitting device will be described as an embodiment of the present invention. The representative use state of this embodiment is the same as that of the 27th. The semiconductor light-emitting device of the present invention can be mounted on, for example, a P-brush circuit substrate. In order to be mounted on the printed circuit board, the outer portion (outer wire) of the outer casing portion 8 of the substrate of the rotating body member represented by the third embodiment is bent to form an outer covering body. The bottom surfaces of the portions 8 are substantially identical. The P blade la or the portions 2b, 2c located below the bottom surface. This portion is bonded to the wiring of the printed circuit board 13 by the solder 14. $27 gj(8) is an example of the rise of the part ia. The part la is that the outer wire f is folded 9G toward the lower side, and then it is pulled in the opposite direction to the horizontal direction, and the direction of the extension of the outer wire of j is not changed, and The horizontal position is substantially the same as the bottom surface of the outer cladding portion 8, and the 27th (b) shows an example of forming a portion lb which is an outer conductor, body. P minute 8 is bent 9G degrees twice, so as to be formed along the bottom surface of the outer casing portion 8; Fig. 27 (4) 疋 shape, part k example 'this part is the outer conductor is opposite to the 27th square The outer body portion 8 is bent 9 times twice to form along the top surface of the outer casing portion 8. The method of bending the outer wire is not limited to this, and it conforms to the shape of each of the conductor wires. [37th Embodiment] In the present embodiment, a silver or silver alloy layer, a titanium layer, and a reflective layer are provided on the substrate 2 in the same manner as in the 32nd embodiment. However, the carbon concentration of the reflective layer 4 is ΐχΐ〇2〇^ or less. The bonding property of the conductor light-emitting element mounting substrate was evaluated by the access 2, and was joined to the line-shaped curve composed of gold. Here, the wire bonding means that the electrodes on the lead frame side are electrically connected to the electrodes on the wire (four) component, and are connected by a gold # wire. The first finger will be a wire-twisted joint in which the tip end of the wire is made to discharge. Usually, the position is 51 = 14, 2012,778 degrees. 'Crimping property' Mostly, the electrode on the element side is first joined. In the present embodiment, a portion of the copper substrate which is provided with the bonding layer 4 in the same manner as in the 32nd embodiment is joined to discharge a line in which the tip end of the wire is formed into a spherical shape. The second bonding means that the electrode on the element side is joined to the electrode on the lead frame side to be connected by the above-mentioned wire at a predetermined position. In the present invention, the portion in which the aluminum reflective layer 4 is provided in the same manner as in the 32nd embodiment is bonded to the wire, and the wire ends are pressure-bonded so as to be friction-attached. Table 10 shows the relationship between the carbon concentration in the aluminum reflective layer 4 and the bonding strength of the gold wires. In the embodiment 47, a silver layer having a thickness of 〇.15 is formed by wet plating to form a silver layer of 3 〇μηη, and the product is stamped and added, and the thickness is Q 5 mm. An embodiment in which a circuit board for a light-emitting device is formed by fixing a layered glass epoxy resin substrate with a heat-resistant acrylic resin adhesive. This material was mounted on the above vacuum vapor deposition apparatus to form a titanium layer of 〇1 μm and an aluminum reflective layer of 〇 2 μm, and subjected to SIMS analysis. Here, the carbon concentration in the aluminum reflective layer is the minimum concentration of the carbon concentration in the aluminum reflective layer. The carbon concentration in the aluminum reflective layer was 3 x 10 〇 20 / cm 3 . After forming a 7 〇μη steel substrate and a 3.0 μm silver layer by wet plating on the entire surface of the polyimide film having a thickness of 125 μm, the heat-resistant acrylic resin adhesive and the substrate 2 of Example 48 were used. Fit to form a sheet. In Example 48, after the aluminum reflective layer 4 was formed, an unnecessary portion was punched out by press working to form a wiring member. Also, the carbon concentration in the aluminum reflective layer 4 of Example 48 was subjected to SIMS analysis, and as a result, the carbon concentration in the aluminum reflective layer 4 was ΐχ102〇/cm3. In the embodiment 49, after forming a nickel layer of 〇7 μm and a palladium of 0.05 μm on the iron-containing copper alloy by wet plating, only the press working is performed, and then the obtained product is made of a non-recorded steel in a vacuum evaporation apparatus. The mold jig of (SUS304) is fixed to form a titanium layer 19 of 〇.ipm, and a reflection layer 4 of 〇·2μm. The carbon concentration in the aluminum reflective layer 4 of Example 49 was 3χ1〇19/cm3. As a criterion for evaluation, the first bonding strength is a case where a shear strength of 0.39 N or more is taken as 〇 ', and a value of less than 0.39 N is taken as X. The second bonding strength is a case where the shear strength of 〇 049 N or more is taken as 〇, and a case of less than 0.049 N is taken as X. As is clear from Table 10, when the carbon concentration of the reflective layer 4 is 3 χ 1 〇 2 ()/cm 3 or more, the joint strength is lowered, and preferably l x 10 2 G/cm 3 or less. In the present embodiment, since an organic material such as an epoxy resin material or an acrylic pressure-sensitive adhesive is used, the carbon concentration in the aluminum layer increases, and as a carbon source, contamination of the substrate, flushing gas, and Reverse diffusion of vacuum pump oil, impurities of sputtering gas when using sputtering method, etc. 52 201214778 Various factors. In the bonding test, the wire bonding machine was carried out using Kulcick & Soffa Industries' MODEL4522' and using a gold wire of 25 μm straight, with a supersonic intensity of lw and an ultrasonic application time of 25 ms. It was carried out in the shear test mode of the bonding tester PTR-1 of the company. The SIMS measurement was carried out by using pffl Corporation as a primary ion source of absolute ions at an acceleration energy of 3 keV. [Embodiment 38] Figure 33 is a schematic cross-sectional view showing a semiconductor light-emitting device according to a thirty-eighthth embodiment of the present invention. The solid-fed type is such that the semi-conductive stray light element 6 is mounted on the light-reduction layer 4±, and the base material 2B, 2C for the power supply terminal portion for wire bonding or internal wire bonding wiring with the semiconductor light-emitting element 6 is not present. Aluminum reflective layer 4. The wire bonding tip may have the aluminum reflective layer 4, but in the case where the aluminum reflective layer 4 is not provided, by optimizing the surface states of the substrates 2B and 2C, the range of bonding conditions is expanded, and the assembly speed and yield are further improved. Fig. 33 shows a case where the lower portions of the base materials 2A, 2B, and 2C are covered with a resin, but the entire surface or the portion of the back surface of the base material 2 may be exposed on the back surface. The exposed portion is further connected to a metal such as a heat radiating plate or the like, and the heat radiation property can be improved, and the light output can be increased. When the semiconductor light emitting element 6 having the back electrode is used, the power supply for connection to the upper electrode can be used. The terminal may have more than one or more wires, and the plurality of power supply terminals connected to the upper electrode may be wire-bonded. When a plurality of terminals are used, it is easy to perform wiring arrangement at the time of driving a large current and wiring arrangement between the light-emitting devices, and they are used separately. Fig. 33 shows a case where the connection between the electrode portion of the light-emitting element and the power supply terminal is wire-bonded and joined. However, an internal lead wire may be formed and a connection by a wedge connection may be performed, and the internal lead wire is patterned. The wiring material, the wedge connection is used as a skin and heated. The inventors have learned that, as described above, the titanium layer 19 between the silver layer or the silver alloy layer 3 layer and the light-reducing layer 4 enhances the heat resistance of the material to the reflectance, that is, the reflection characteristics and resistance after the secret treatment. Vulcanization characteristics, and good reflectance in the environment of vulcanization. It should be noted that this applies to all of the above embodiments. The substrate for mounting a semiconductor light-emitting device of the present invention and the semiconductor light-emitting device using the same can be used as a practical example of the present invention. Not... 53 201214778 [Table 1] \ Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Example 3 Example 4 Example 5 Example 6 Example 7 Thickness of the reflective layer (μηι) No Α 1 Ag3.0 No A1 The side of the substrate is NiO.7 Pd0.05 0.006 0.010 0.02 0.05 0.1 1 5 Initial reflectance and judgment 93 〇63 X 74 X 86 X 90 〇91 〇91 〇91 〇90 〇Vulcanization resistance (initial reflectance and vulcanization) Ratio of reflectance after 96 hours (%)) 29 93 99 95 94 98 98 96 97 [Table 2] Example 11 Example 12 Example 13 Carbon concentration (pieces/cm3) 3χ1020 ΙχΙΟ20 3χ1019 First joint strength X 〇 〇Second joint strength X 〇〇 [Table 3] \ Example 21 Example 22 Example 23 Example 24 Example 25 Comparative Example 21 Comparative Example 22 Comparative Example 23 Comparative Example 24 Thickness of the reflective layer 0.006 0.02 0.1 0.5 1 0.001 0.003 无Α1 Ag3.0 No A1 Substrate 54 201214778 (μιη) Side NiO.7 Pd0.05 Initial reflectance 〇〇〇〇〇〇〇〇X Vulcanization resistance (initial reflectance and reflectance after 96 hours of vulcanization) Ratio (%)) 80 89 98 96 97 29 50 29 93

[Table 4] Example 26 Example 27 Example 28 Carbon concentration (pieces/cm3) ΙχΙΟ20 3χ1019 3 χΙΟ20 First joint strength 〇〇X Second joint strength 〇〇X [Table 5] Comparative Example 31 Comparative Example 32 Comparative Example 33 Comparative Example 34 Example 33 Example 34 Example 35 Example 36 Example 37 Thickness of the reflective layer (μιη) (silver) 3.0 (nickel) 0.7 (put) 0.05 0.006 0.010 0.02 0.05 0.1 1 5 Initial reflectance and determination 93 〇63 X 74 X 86 X 90 〇91 〇91 〇91 〇90 〇Resistance-resistant 29 93 99 95 94 98 98 96 97 55 201214778 Characteristics (ratio of initial reflectance to reflectance after 96 hours of vulcanization (%)) [Table 6] Ti-free layer Ο-194/ΝίΡά/Α10.1μιη Ή layer Ο-194/ΝΐΡά/Τΐ0.1μπι /ΑΙΟ.Ιμηι Tensile test results (mN) Average 54.4 99.1 Maximum 78 110 Minimum 34 90 Standard deviation 18 6.5 [Table 7] Ti layer C-194/Ag3.0pm /ΤίΟ.Ιμπι /ΑΙΟ.Ιμιη Tensile test result (mN) Average 93.8 Maximum 102 Minimum 80 Standard deviation 7.0 [Table 8] Example 38 Example 39 Example 40 carbon thick Degree (cm/cm3) 3χ1020 ΙχΙΟ20 3χ1019 First joint strength X 〇〇 second joint strength X 〇〇 [Table 9] 56 201214778 Example 44 Implementation side 45 Example 46 Aluminum reflective layer thickness (μιη) 0.1 0.1 0.1 Titanium layer (Ο.ίμιη) with or without X 〇0 thickness of mineral silver layer (μιη) 3.0 3.0 3.0 Heat treatment with or without X 〇〇 initial reflectance and judgment 91 62 92 〇X 0 and vulcanization characteristics (initial reflectance and vulcanization 98 48 The ratio of the reflection after 55 hours (%)) 〇X 〇 determination [Table 10] Carbon concentration (pieces/cm3) First joint strength Example 47 Example 48 Example 49 3 χΙΟ20 ΐχίο20 3χ1019 X 〇〇 2nd joint strength X 〇〇 [Simplified description of the drawings] Fig. 1 is a schematic cross-sectional view showing a substrate of a cast light-emitting device mounted on the surface of the watch, and Fig. 2 is a view showing the hair of the cast body according to the second embodiment of the present invention. Fig. j is a schematic view showing the mounting of the semiconductor light emitting element according to the third embodiment of the present invention; Ϊ = Yes, the semiconductor light emitting device according to the fourth embodiment of the present invention is shown. The semiconductor light-emitting device mounting base according to the fifth embodiment of the present invention is shown in FIG. 6 (8) to (e) showing the semiconductor light-emitting secret mounting base 57 according to the sixth embodiment of the present invention. 7(8) to 8(e) are schematic cross-sectional views showing a semiconductor light emitting element mounting substrate and a semiconductor light emitting device according to a seventh embodiment of the present invention; and Fig. 8 is a view showing a conductor of the present invention as a f8 embodiment FIG. 9 is a schematic cross-sectional view showing the hairpin of the first embodiment of the present invention, and FIG. 10 is a view showing the mounting of the semiconductor light-emitting device of the first embodiment of the present invention. FIG. 12 is a schematic cross-sectional view showing a semiconductor light-emitting device mounting substrate according to a thirteenth embodiment of the present invention; and FIG. 12 is a schematic cross-sectional view showing a semiconductor light-emitting device mounting substrate according to a thirteenth embodiment of the present invention; FIG. 14 is a schematic cross-sectional view showing a semiconductor light-emitting device according to an embodiment of the present invention; and FIGS. 14(8) to (9) are semi-conductive members showing a fifteenth embodiment of the present invention; (a) to (c) of FIG. 15 are schematic cross-sectional views showing a semiconductor light-emitting device mounting substrate according to a sixteenth embodiment of the present invention; and FIGS. 16(a) to (d) are diagrams showing FIG. 18 is a schematic cross-sectional view showing a semiconductor light-emitting device according to a seventeenth embodiment of the present invention; and FIGS. 18(8) to (c) are views showing a nineteenth aspect of the present invention. 19 is a schematic cross-sectional view showing a semiconductor light-emitting device mounting substrate and a semiconductor light-emitting device according to a twenty-first embodiment of the present invention; and FIG. 20(A) is a view showing the present invention. (S9) is a schematic cross-sectional view of a substrate for mounting a semiconductor light-emitting device according to an embodiment of the present invention, and FIG. 21 is a view showing a second embodiment of the present invention. A schematic cross-sectional view of a semiconductor light-emitting device according to a twenty-fourth embodiment of the present invention; Fig. 23 is a schematic cross-sectional view showing a semiconductor light-emitting device according to a twenty-fifthth embodiment of the present invention; 58 201214778 substrate (the blade of the installation of the shoji shoji 26th solid fuel type drunk conductor element) (4) is the table judgment Fig. 26 (a) (e) of the real money picking body light-emitting element is mounted on the side of the substrate and the half-kissing side of the present invention; the tearing wa piece is used for women's clothing = making = 2^m _ 29 Hengshu glasses light device Γ 图 图 Γ Γ Γ Γ 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体Fig. 32 is a schematic cross-sectional view showing the substrate of the present invention; and 316 is a schematic view showing the mounting of the semiconductor light-emitting device of the embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. is a schematic cross-sectional view showing a semiconductor light emitting device according to an embodiment of the present invention. [Description of main component symbols] 1 substrate 1 to 2, 2A, 2B, 2C substrate (wire substrate) 3 silver layer or silver alloy layer 4, 4A '4B aluminum reflective layer 5 semiconductor light-emitting device 6 semiconductor light-emitting Element (LED wafer) 7 Bonding wire 8 Outer body portion 8a Concave portion 8b inclined surface 59 201214778 9 Translucent resin portion 10 Gold flash plating layer 11 Metal layer 12 Gold plating layer 13 Printed circuit substrate 14 Solder 15 Wiring 17 Nickel layer 18 I Bar layer 19, 19A, 19B Titanium layer 20 Outer wire 21 First bent portion 22 Second bent portion 23 Plating

Claims (1)

201214778 VII. Patent application garden: 1. A substrate for mounting a semiconductor light-emitting device, comprising: a substrate comprising a metal portion; and an aluminum reflective layer having a thickness of 〇.〇2μηι or more and 5 μm or less and provided on the base The surface side of the semiconductor light emitting element is mounted on the material. 2. The semiconductor light-emitting device mounting substrate according to claim 1, wherein a metal layer containing titanium is provided between the substrate and the aluminum reflective layer. 3. The substrate for mounting a semiconductor light-emitting device according to the first or second aspect of the invention, wherein the soil is made of a metal other than Ag between the substrate and the aluminum reflective layer. a first metal layer, the first metal layer being composed of one selected from the group consisting of palladium, gold, tin, nickel, a copper-tin alloy, a copper-nickel alloy, and an iron-nickel alloy, wherein the aluminum reflective layer is provided At least a portion of the first metal layer. The substrate for mounting a semiconductor light-emitting device according to the first or second aspect of the invention, wherein a nickel layer is provided between the substrate and the aluminum reflective layer in order from the substrate side. And the layer. 5. The semiconductor light-emitting device mounting substrate according to claim 4, wherein a gold flash plating layer is provided between the palladium layer and the aluminum reflective layer. 6. A substrate for mounting a semiconductor light-emitting device, comprising: a substrate comprising a metal portion; a silver layer or a silver alloy layer having a thickness of not more than 5 tons, and a semiconductor light-emitting layer provided on the substrate The surface side of the element; the reflective layer having a thickness of 〇·〇〇6 μm or more and 2 μm or less and provided on the silver layer or the silver alloy layer. The substrate for mounting a semiconductor light-emitting device according to claim 6, wherein a first metal layer made of a metal other than Ag is provided between the substrate and the silver layer or the silver alloy layer. The first metal layer is composed of one selected from the group consisting of palladium, gold, tin, nickel, copper-tin alloy, copper-nickel alloy, and iron-nickel alloy, and 61 201214778 is provided on at least the first metal layer. The reflective layer is separated by a layer of a Wei or a silver alloy. And a semiconductor light-emitting device mounting base according to item 6 or item 7, wherein the silver layer or the silver alloy layer and the aluminum reflective layer are provided with a gold flash plating layer. The semiconductor light-emitting device mounting substrate according to the sixth aspect of the invention, wherein the silver layer or the silver alloy layer and the (iv) brittle-like layer are provided with a metal-containing layer, and the ? 02μπι or more and 2 sec. The semiconductor light-emitting device mounting substrate according to the above-mentioned item, wherein the towel has a gold layer on the outermost surface. The mounting of the semiconductor light-emitting device according to any one of the items of the present invention, wherein the substrate has an impurity carbon concentration of lxl〇14/cm3 or more. Ϊ́χΐ〇20 / cm3 or less. The substrate for mounting a semiconductor light-emitting device according to any one of the preceding claims, wherein the reflectance of the insole layer is equal to or less than the above. A semiconductor light-emitting device comprising: a substrate for a semiconductor light-emitting device according to any one of the items of the present invention, wherein the semiconductor light-emitting device has a semiconductor light-emitting device An outer covering portion that surrounds a portion of the semiconductor light emitting element mounting substrate, and has a concave portion formed by an inclined surface or a vertical surface around the semiconductor light emitting 7G member, the inclined surface emitting light away from the semiconductor The element mounting substrate is separated from the semiconductor light emitting element, and the translucent resin portion is filled in the recessed portion of the outer package portion to seal the semiconductor light emitting element. 14. The semiconductor light-emitting device of claim 13, wherein the semiconductor light-emitting 70-piece wire forms a riding resistive layer on the wire and is formed with the reflective layer. The substrate is electrically insulated and is wire-bonded or internally bonded to the substrate on which the aluminum reflective layer is not formed as a terminal for power supply. 15. The semiconductor light-emitting device according to claim 13, wherein the impurity carbon concentration of the reflective layer is 1χ1014/cm3 or more and 2〇/cm3 or less. 16. The semiconductor light-emitting device according to claim 13, wherein the main constituent material of the surface of the substrate which is wire bonding or internal wire bonding as the terminal for power supply of 62 201214778 is selected from the group consisting of gold, One of silver, handle, gold alloy, silver alloy or alloy, or a combination thereof. 63