JP2009055006A - Light emitting device, and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device which effectively suppresses optical absorption by a conductive wire and having a high light emitting extraction efficiency. <P>SOLUTION: A light emitting device 1 has a conductive wire 40 electrically connecting an electrode 12 of a light emitting element 10 and conductive member 30. A surface of the conductive wire 40 is covered with a metal film 70 at a connecting part of at least one of the electrode 12 of the light emitting element 10 and conductive member 30 and the conductive wire 40. At a peak wavelength of a light-emission of the light emitting element 10, a reflection factor of the metal film 70 is higher that of the conductive wire 40. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a light-emitting device including a light-emitting element, and more particularly to a light-emitting device having high extraction efficiency of light emission from the light-emitting element.

  As one of the methods for increasing the extraction efficiency of the light emitting device, increasing the reflectance in the package on which the light emitting element is mounted has been actively performed. As one means for increasing the reflectance, it is known to apply a metal film to a surface irradiated with light emitted from a light emitting element (see, for example, Patent Document 1). In the light emitting device of Patent Document 1, the mounting surface is used as a light reflecting member by applying silver plating to the light emitting element mounting surface of the heat sink, thereby improving the light extraction efficiency of the light emitting element.

  When the light emitting element is mounted on the light emitting device, the light emitting element is die-bonded to a package having a lead electrode made of a metal plate such as Cu, and the light emitting element and the lead electrode are wire-bonded with a conductive wire such as Au. At this time, when a blue light emitting element is used as the light emitting element, there is a problem that Cu or Au absorbs blue light and the extraction efficiency of the light emitting device is lowered. In particular, since the conductive wire is directly connected to the light emitting element and stretched across the light emitting surface side of the light emitting element, the light absorption of the conductive wire cannot be ignored. If the conductive wire is formed of a metal having high blue light reflectance (for example, Ag), the light absorption of the conductive wire can be greatly reduced, but the bonding property between the electrode of the light emitting element and the lead electrode is low and sufficient bonding strength is obtained. Cannot be obtained.

  As a conductive wire that can be used for wire bonding of a semiconductor device, a composite bonding wire including a core material and a covering material that covers the core material is known (see, for example, Patent Documents 2 to 4). These composite wires use a high-strength material for the core material to increase the mechanical strength of the composite wire, and use a conductive material that is easy to bond to the coating material to ensure bonding strength and conductivity. Yes.

Therefore, it is conceivable to use a composite wire for the light emitting device to suppress light absorption by the conductive wire while maintaining sufficient bonding strength. For example, in the case of a composite wire in which a core material made of Au is coated with a coating material made of Ag, bonding strength can be ensured by Au and blue light can be reflected by Ag.
JP 2006-324438 A JP-A-3-32033 Japanese Patent Laid-Open No. 7-66235 JP-A-10-130882

  When a light emitting device is manufactured using a composite wire, there is a problem that the light extraction efficiency of the light emitting device does not increase as much as expected.

  When the first bond 150 of the ball bonding is formed with the composite wire as shown in FIG. 14, even if the composite wire 140 in which the core material 142 made of Au is covered with the coating material 144 made of Ag is used, There is no covering member 144 on the surface. This is because the core material 142 and the covering member 144 are melted and mixed when the end portion of the composite wire 140 is melted into a ball shape when the first bond 150 is formed. As shown in the figure, when the first bond 150 is bonded to the electrode 112 of the light emitting element 110, Au exposed on the surface of the first bond 150 causes light absorption in the vicinity of the light emitting element 110, and effectively increases the light extraction efficiency. I can't.

  The second bond 160 of the ball bonding shown in FIG. 15 is bonded by heating and pressing the composite wire 140 to the lead electrode 130. At that time, the covering material 144 at the pressing portion is peeled off and the core material 142 is exposed. There is a possibility.

  Accordingly, an object of the present invention is to provide a light emitting device with high light emission extraction efficiency, in which light absorption by a conductive wire is effectively suppressed, and a manufacturing method thereof.

  The light-emitting device of the present invention is a light-emitting device having a conductive wire that electrically connects an electrode of a light-emitting element and a conductive member, wherein at least one of the electrode of the light-emitting element and the conductive member, the conductive wire, The surface of the conductive wire in the joint portion is covered with a metal film, and the reflectance of the metal film is higher than the reflectance of the conductive wire at the emission peak wavelength of the light emitting element.

  In this light emitting device, the light reaching the joint portion of the conductive wire is reflected by a metal film having a higher reflectance than the conductive wire, so that light absorption by the conductive wire is suppressed and the light extraction efficiency of the light emitting device is increased. be able to.

  The method for manufacturing a light emitting device of the present invention is a method for manufacturing a light emitting device having a conductive wire for electrically connecting an electrode of a light emitting element and a conductive member, and the electrode of the light emitting element and the conductive member are connected to each other. A wire bonding step of connecting with the conductive wire; and an electroplating step of covering the electrode of the light emitting element, the conductive member, and the conductive wire with a metal film by an electroplating method.

  In this manufacturing method, since the electroplating step is performed after the wire bonding step, a metal film can be formed on the surface of the joint portion of the conductive wire. Further, by using the electroplating method, a metal film is not formed on the surface of the light-emitting element that is not a conductor, and there is no fear that the extraction efficiency of the light-emitting element is reduced by the metal film.

  According to the light emitting device of the present invention, the light absorption by the conductive wire is reduced, so that the extraction efficiency of the light emitting device can be increased. Moreover, according to the manufacturing method of this invention, a metal film can be efficiently formed on the surface of a conductive wire.

<Embodiment 1>
1 and 2 illustrate a light emitting device 1 according to the present embodiment, which is of a type having a package based on a lead frame. The light emitting element 10 is mounted face up in the recess 22 of the package 20. The package 20 has a pair of lead electrodes (first lead electrode 30 and second lead electrode 32) penetrating therethrough as a conductive member. One end portions of the lead electrodes 30 and 32 are exposed in the recess 22 and constitute internal conductive portions (lead terminals) 301 and 321. Further, the other end portions of the lead electrodes 30 and 32 pass through the package 20 and constitute external conductive portions (external terminals) 302 and 322. A pair of electrodes (not shown) formed on the light emitting element 10 and a pair of lead terminals (first lead terminal 301 and second lead terminal 322) are electrically connected by a conductive wire 40, respectively.

  FIG. 3 is an enlarged cross-sectional view of a joint portion (reference numeral B in FIG. 2) between the electrode 12 and the conductive wire 40 of the light-emitting element 10, and FIG. 4 is a joint portion between the first lead terminal 301 and the conductive wire 40 ( It is sectional drawing to which the code | symbol C) of FIG. 2 was expanded.

  The bonding portion illustrated in FIG. 3 is a first bond 50 of ball bonding. Here, in the present embodiment, the surface of the first bond 50 and the surface of the electrode 12 of the light emitting element 10 are covered with the metal film 70. It is different from the electrode 112 of the light emitting element 110. Thus, in the light emitting device 1 of the present invention, light absorption by the conductive wire 40 is suppressed.

  Since the first bond 50 is bonded to the electrode 12 after melting the end of the conductive wire 40 to form a ball, the first bond 50 is shaped like a crushed ball. The surface of the first bond 50 is covered with a metal film 70.

  In the light emitting device 1 of the present invention, the reflectance of the metal film 70, particularly the reflectance of the metal film 70 at the light emission peak wavelength of the light emitting element 10 is set higher than the reflectance of the conductive wire 40. Thereby, the light reaching the first bond 50 is reflected by the metal film 70, and the reflected light can be extracted from the light emitting device, so that the light extraction efficiency of the light emitting device is improved. That is, the light emitting device 1 of the present invention can reduce the absorption of light by the first bond 50 and can reflect the light that has not been absorbed and extract it from the light emitting device 1. Due to these two actions, the light extraction efficiency of the light emitting device 1 is improved. Further, it is preferable that the metal film 70 is also coated on the surface of the conductive wire 40 because the light extraction efficiency of the light emitting device 1 is further improved. In particular, it is more preferable that the metal film 70 is continuously covered from the surface of the electrode 12 of the light emitting element 10 to the surface of the conductive wire 40 through the surface of the first bond 50 and the outer edge 56 of the bonding surface 54. When the continuous metal film 70 is formed, when the electrode 12 of the light emitting element 10 absorbs light of the light emitting element 10 more easily than the metal film 70, light absorption by the electrode 12 is reduced and the light of the light emitting device 1 is reduced. The extraction efficiency is further improved. Further, since the continuous metal film 70 covers the outer edge 56 of the bonding surface 54 between the first bond 50 and the electrode 12, the bonding strength of the bonding surface 54 is reinforced, and the conductive wire 40 tends to be prevented from peeling off.

  4 is a second bond 60 of ball bonding. Here, in the present embodiment, the surface of the end face 62 and the second bond 60 is covered with the metal film 70 and the conductive wire is not exposed, which is different from the second bond 160 in the case where the conventional composite wire is used. ing. As described above, in the second bond 60, the entire bonding portion including the end face 62 that is normally exposed is covered with the metal film 70, so that light is reflected while suppressing light absorption by the conductive wire 40. It can be taken out from the light emitting device 1.

  The second bond 60 is bonded by heating and pressing a predetermined position of the continuous conductive wire 40 to the first lead terminal 301, and then the conductive wire 40 is positioned near the bonded portion and distal to the first bond 50. It is formed by cutting. Therefore, unlike the first bond 50, the conductive wire 40 of the second bond 60 is crushed and deformed. Further, the end portion 61 of the conductive wire 40 protrudes from the second bond 60, and the end face 62 is formed.

  In the light emitting device 1 of the present invention, the reflectance of the metal film 70 at the light emission peak wavelength of the light emitting element 10 is set higher than the reflectance of the conductive wire 40. Thereby, the light reaching the second bond 60 is reflected by the metal film 70, and the reflected light can be extracted from the light emitting device, so that the light extraction efficiency of the light emitting device is improved. That is, the light emitting device 1 of the present invention can reduce the absorption of light by the second bond 60 and can reflect the light that has not been absorbed and extract it from the light emitting device 1. Due to these two actions, the light extraction efficiency of the light emitting device 1 is improved. Further, it is preferable that the metal film 70 is also coated on the surface of the conductive wire 40 because the light extraction efficiency of the light emitting device 1 is further improved. In particular, it is more preferable that the metal film 70 is continuously covered from the surface of the electrode 12 of the light emitting element 10 to the surface of the conductive wire 40 through the outer edge 66 of the bonding surface 64 of the second bond 50. Since the continuous metal film 70 covers the outer edge 66 of the bonding surface 64 between the second bond 60 and the first lead terminal 301, the bonding strength of the bonding surface 54 is reinforced, and the conductive wire 40 tends to be prevented from peeling off. .

  As described above, in the light emitting device 1 of the present invention, the end face 62 of the conductive wire 40 is covered with the metal film 70, and light absorption at the end face 62 can be reduced to improve the light emission efficiency of the light emitting device 1. . That is, in the conventional light emitting device as shown in FIG. 15, the end face 162 of the composite wire 140 is exposed and the light from the light emitting element is absorbed.

  Further, as shown in FIGS. 3 and 4, the metal film 70 is not formed on the bonding surface 54 between the first bond 50 and the electrode 12 and the bonding surface 64 between the conductive wire 40 and the first lead terminal 301. By doing so, the bonding strength of the first bond 50 and the second bond 60 can be made as high as that of normal wire bonding.

  When the light emitting element 10 used in the light emitting device 1 has a light emission wavelength of 400 nm to 530 nm, the improvement rate of the extraction efficiency is remarkable. This is because a metal (for example, Cu or Au) having a high absorptance with respect to light having a wavelength of 400 nm to 530 nm (blue purple to green) is used as the material of the general conductive wire 40 and the lead electrodes 30 and 32. This is because the amount of decrease in light absorption due to coating with the film 70 becomes significant. The effect of improving the light extraction efficiency is also effective for light emitting devices of other colors using a blue light emitting element as an excitation source, such as a white light emitting device combining a blue light emitting diode and a yellow phosphor.

  As described above, as the metal material used for the metal film 70, a material having a high reflectance with respect to the light from the light emitting element 10 is used. In particular, a material having a reflectance of 80% or more is generally used. This is preferable because it is an available material and the light extraction efficiency can be sufficiently improved. Specifically, Ag or an Ag alloy is preferable. Ag or an Ag alloy has a high reflectance in the entire visible light wavelength region, and is easy to apply regardless of the light emission color of the light emitting element 10. Further, there are advantages that it is easy to obtain and the metal film 70 can be easily formed. Ag is suitable in terms of reflectance, and an Ag alloy is suitable in terms of resistance to discoloration due to sulfuration or the like.

  When a material (for example, Ag) that changes color due to a chemical reaction is used for the metal film 70, it is preferable to prevent the color change of the metal film 70 using a coating film. Since a rapid increase in light absorption due to the discoloration of the metal film 70 is suppressed, the light emitting device 1 can maintain high extraction efficiency over a long period.

  The main cause of the discoloration of the metal film 70 is that outside air containing organic gas and moisture enters the recess 22 of the package 20 from the outside of the package 20 and comes into contact with the metal film 70. The outside air enters the recess 22 through the gap between the package 20 and the lead frames 30 and 32, through the gap between the package 20 and the sealing resin 90, and / or through the sealing resin 90. . Therefore, in one method of suppressing discoloration, the surface of the metal film 70 is covered with a coating film to block the metal film 70 from the outside air. In another method, the package 20 and the surface 92 of the sealing resin 90 are covered with a coating film to prevent outside air from entering the recess 22 of the package 20.

Below, the coating example of a coating film is explained in full detail, referring a figure.
5 to 8 show examples in which the surface of a metal film (not shown) is covered with a coating film 72. In these examples, not only the effect of preventing discoloration of the metal film but also the effect of suppressing the occurrence of migration of the metal film can be expected. Therefore, even when the metal film is formed of a metal material that easily causes migration (for example, Ag or Ag alloy), it is expected that failure of the light-emitting device 1 due to a short circuit can be reduced.

  In the light emitting device 1 shown in FIG. 5, the coating film 72 directly covers a metal film (not shown). Thereby, a metal film can be interrupted | blocked from external air. In the light emitting device 1, since the light emitting element 10 is not covered with the coating film 72, the light emission of the light emitting element 10 is not affected (absorption or reflection) by the coating film 72. Therefore, it is advantageous in that the light extraction efficiency does not decrease.

  The coating film 72 of the light emitting device 1 shown in FIG. 6 further covers the surface of the light emitting element 10. Since the light emitting device 1 can block the light emitting element 10 from the outside air, it is advantageous in that the light emitting element 10 is hardly deteriorated. The coating film 72 is preferably formed from a material having a high transmittance (for example, 70% or more) at the emission wavelength of the light emitting element 10. In FIG. 6, a part of the package 20 exposed from the bottom surface 221 of the recess 22 of the package 20 (exposed from between the lead terminals 301 and 321) and the bleed prevention wall 24 are covered with a coating film 72. However, they may be covered with the coating film 72.

  The coating film 72 of the light emitting device 1 shown in FIG. 7 also covers the inner surface (side surface 222) of the recess 22 of the package 20. That is, the coating film 72 is continuously covered over the inner surface of the recess 22 and the surfaces of the lead terminals 301 and 321. As a result, the boundary 23 between the side surface 222 of the recess 22 of the package 20 and the lead terminals 301 and 321 is covered with the coating film 72. Therefore, even if outside air enters the interface between the package 20 and the lead electrodes 30 and 32, it can be prevented from entering the recess 22 of the package 20.

The coating film 72 of the light emitting device 1 shown in FIG. 8 further covers the upper surface 26 of the package 20, the outer surface 28 of the package 20, and the external terminals 302 and 322 exposed to the outside of the package 20. That is, the coating film 72 is continuously covered over the outer surface 28 of the package 20 and the surfaces of the external terminals 302 and 322. As a result, the boundary 29 between the outer surface 28 of the package 20 and the external terminals 302 and 322 is covered with the coating film 72. Therefore, it is possible to prevent outside air from entering the interface between the package 20 and the lead electrodes 30 and 32 from the boundary 29.
In FIG. 8, a part of the surface of the external terminals 302 and 322 is covered with the coating film 72, that is, the remaining part of the surface of the external terminals 302 and 322 is not covered with the coating film 72. However, the entire surface of the external terminals 302 and 322 can be covered with the coating film 72. At this time, the thickness of the coating film 72 is preferably set to 5 μm or less, more preferably 3 μm or less, which is a thickness with which there is no problem in mounting the light emitting device.

FIG. 9 shows an example in which the surface 92 of the sealing resin 90 is covered with the coating film 72. For example, even when a gas-permeable sealing resin (for example, silicone resin) 90 is used, the metal film (not shown) can be shielded from the outside air. In particular, as shown in FIG. 9, it is preferable that the coating film 72 continuously covers not only the surface 92 of the sealing resin 90 but also the upper surface 26 of the package 20. Thereby, it is possible to prevent outside air from entering the interface between the sealing resin 90 and the package 20 from the boundary 94. The coating film 72 is preferably formed from a material having a high transmittance (for example, 70% or more) at the emission wavelength of the light emitting element 10.
Further, as in FIG. 8, it is preferable that the coating film 72 is continuously coated over the outer surface 28 of the package 20 and the surfaces of the external terminals 302 and 322. This prevents outside air from entering the interface between the package 20 and the lead electrodes 30 and 32 from the boundary 29.
As with the light emitting device 1 in FIG. 8, the light emitting device 1 in FIG. 9 can also cover the entire surface of the external terminals 302 and 322 with the coating film 72. At this time, the thickness of the coating film 72 is preferably set to 5 μm or less, more preferably 3 μm or less, which is a thickness with which there is no problem in mounting the light emitting device.

  The improvement of the light extraction effect of the present invention is more effective in the configuration including the plurality of light emitting elements 10. This is because when the number of the light emitting elements 10 is increased, the entire length of the conductive wire 40 to be used is increased, so that the suppression of light absorption by the coating of the conductive wire 40 becomes more effective.

Below, the manufacturing process of the light-emitting device 1 of this Embodiment is demonstrated.
(1. Molding of package 20)
As shown in FIG. 10, a plurality of packages 20 are formed on a lead frame 34 produced by cutting a metal foil. A plurality of sets of first lead terminals 301 and second lead terminals 322 are formed on the lead frame 34. The package 20 is formed so as to enclose a pair of lead terminals 301 and 321. In the package 20 made of resin, the lead frame 34 is sandwiched between molds for the package 20, and the package 20 is molded by a resin molding method such as molding.

(2. Die bonding process)
Next, the light emitting element 10 is die-bonded to the second lead terminal 321. For die bonding, for example, a solder material such as Au—Sn, or an appropriate die bonding material such as silicone or a modified silicone adhesive is used. If the bleed prevention wall 24 is provided on the second lead terminal 321 as shown in FIG. 1, it is possible to prevent the die bond material having a low viscosity from spreading over the entire second lead terminal 321.

(3. Wire bonding process)
The die-bonded light emitting element 10 and the lead terminals 301 and 321 are wire-bonded with the conductive wire 40. In the light emitting element 10 illustrated in FIG. 1, a pair of electrodes is formed on the light emitting surface side, and each electrode and each of the lead terminals 301 and 321 are connected by a conductive wire 40. As a method of wire bonding, ball bonding or wedge bonding can be used. In the case of ball bonding, as shown in FIGS. 1 to 4, the first bond 50 is generally bonded to the electrode 12 of the light emitting element 10, and the second bond 60 is bonded to the lead terminals 301 and 321. .

(4. Electroplating process)
As shown in FIG. 11, the lead frame 34 on which the light emitting element 10 is mounted is immersed in a plating solution 80 for electroplating together with the package 20. Electroplating is performed by applying a voltage from the power supply device 84 between the counter electrode 82 disposed in the plating solution 80 and the lead frame 34. Since all the lead electrodes 30 and 32 are electrically connected via the lead frame 34, the potential of the lead electrodes 30 and 32 can be made equal by applying a voltage between the lead frame 34 and the counter electrode 82. . Furthermore, the conductive wire 40 wire-bonded to the lead terminals 301 and 321 of the lead electrodes 30 and 32 and the electrode 12 of the light emitting element 10 to which the conductive wire 40 is connected are also equipotential with the lead terminals 301 and 321. Accordingly, the electrodes 12 of the light emitting element 10, the lead electrodes 30 and 32, and the conductive wires 40 included in one package 20 (hereinafter, these members are collectively referred to as “current-carrying members”) simultaneously. Electroplating can be applied. Even when a plurality of light emitting elements 10 are provided in one package 20, all the conductive wires 40 and the electrodes 12 of all the light emitting elements 10 can be electroplated simultaneously. In addition, since all the lead electrodes 30 and 32 connected by the lead frame 34 can be equipotential, all the current-carrying members provided in the plurality of packages 20 connected by the lead frame 34 can be electroplated simultaneously. it can.
Since the plurality of packages 20 are connected by the lead frame 34 as shown in FIG. 10, the ends of the lead frame 34 can be supported and the plurality of packages 20 can be immersed in the plating solution 80 simultaneously as shown in FIG. .

The electroplating will be described in detail below.
The step of plating the current-carrying member with the metal film 70 includes (1) a process of activating the surface of the current-carrying member with acid / alkali, and (2) preparing a plating solution 80 suitable for the composition of the target metal film 70. (3) A process of immersing the energizing member and the counter electrode 82 in the plating solution 80, (4) electrically connecting the energizing member and the counter electrode 82 via a power source, the energizing member serving as the cathode, and the counter electrode 82 Applying a voltage so that becomes an anode.

  In particular, in the process of (4), it is preferable to sequentially perform strike plating by energization for a short time and electroplating for energization until the metal film 70 reaches a predetermined thickness. By performing strike plating, dense metal particles having good adhesion can be deposited, and thus a uniform metal film 70 that is difficult to peel off can be obtained.

  In the present invention, the metal film 70 can be selectively formed on the current-carrying member by forming the metal film 70 by electroplating. That is, in the electroplating method having the configuration as shown in FIG. 11, since no potential is generated in the light emitting element 10, the metal film 70 is not formed on the surface of the light emitting element 10. Thereby, the entire surface of the current-carrying member can be easily covered with the continuous metal film 70, which is optimal for forming the metal film 70 of the present invention.

The plating conditions of the plating solution 80 suitable for forming the metal film 70 made of Ag and an Ag alloy will be exemplified below.
(Ag metal film) An Ag film plating solution 80 is erected and electroplated.
(Ag—Au metal film) The plating solution 80 for the Ag—Au alloy film was constructed so that the eutectoid ratio (mass ratio) was [Ag: Au = 99.9-60: 0.1-40], Perform electroplating.
(Ag—In metal film) The plating solution 80 for the Ag—In alloy film was constructed so that the eutectoid ratio (mass ratio) was [Ag: In = 99.9 to 95: 0.1 to 5], Perform electroplating.
(Ag—Pd metal film) The plating solution 80 for the Ag—Pd alloy film is constructed so that the eutectoid ratio (mass ratio) is [Ag: Pd = 99.9 to 89: 0.1 to 11]. Perform electroplating.
(Ag—Pt metal film) The plating solution 80 for the Ag—Pt alloy film was constructed so that the eutectoid ratio (mass ratio) was [Ag: Pt = 99.9 to 89: 0.1 to 11]. Perform electroplating.

(5. Sealing process)
After the metal film 70 is formed by electroplating, the recess 22 of the package 20 is sealed with a sealing resin 90. The sealing member 90 is cured after filling the recess 22 by a known technique such as potting, printing, transfer molding or the like. The sealing member 90 can contain a light diffusing material or a fluorescent material.

(6. Cut forming process)
The lead frame 34 is cut along XX in FIG. 11 and separated into individual light emitting devices 1 (cut process). The external terminals 302 and 322 protruding outward from the package 20 are bent along the outer shape of the package 20 as shown in FIG. 2 (forming process). Thus, the light emitting device 1 of the present invention is obtained.

Next, each component will be described in detail.
(Light emitting element 10)
As the light emitting element 10, a semiconductor light emitting element can be used, and an element called a light emitting diode or a laser diode is preferable. For example, a semiconductor layer including an active layer is formed on a substrate by various semiconductors such as a nitride semiconductor such as InN, AlN, GaN, InGaN, AlGaN, and InGaAlN, a III-V compound semiconductor, and a II-VI compound semiconductor. The thing in which the laminated structure was formed is mentioned. As a substrate, an insulating substrate such as sapphire (A1 ₂ O ₃ ) or spinel (MgA ₁₂ O ₄ ) having any one of C-plane, A-plane and R-plane as its main surface, and SiC (6H, 4H, 3C). ), silicon, ZnS, ZnO, GaAs, _diamond, an oxide substrate such as LiNbO 3, NdGaO _3, such a nitride semiconductor substrate (GaN, AlN, etc.). Examples of the semiconductor structure include homostructures such as MIS junctions, PIN junctions, and PN junctions, heterojunctions, and double heterojunctions. Alternatively, the semiconductor active layer may have a single quantum well structure or a multiple quantum well structure in which a thin film in which a quantum effect is generated is formed. The active layer may be doped with donor impurities such as Si and Ge and / or acceptor impurities such as Zn and Mg. The emission wavelength of the resulting light-emitting element can be changed from the ultraviolet region to the infrared region by changing the semiconductor material, the mixed crystal ratio, the In content of InGaN in the active layer, the type of impurities doped in the active layer, etc. Can do.
The shape of the light emitting element 10 is not particularly limited, and for example, a circular shape, an elliptical shape, a polygonal shape, or a shape close thereto can be used.

  One light emitting device 1 can include one or a plurality of light emitting elements 10. In the present embodiment, the light emitting device 1 includes six rectangular light emitting elements 10, and three are arranged in the long side direction and two are arranged in the short side direction. When arranging a plurality of light emitting elements 10, it is preferable to arrange the light emitting elements 10 so that the conductive wires 40 connected to the light emitting elements 10 do not pass over the light emitting surfaces of the other light emitting elements 10.

(Conductive member)
The energizing member in the present invention includes an electrode of the light emitting element 10, an electrode of a semiconductor element (for example, a Zener diode, a light receiving element, etc.), lead electrodes 30, 32, and the like, and the light emitting device is provided with at least one member. . In the present embodiment, the electrode 12 of the light emitting element 10, the first lead electrode 30 and the second lead electrode 32 are provided.

(First lead electrode 30, second lead electrode 32)
The 1st lead electrode 30 and the 2nd lead electrode 32 can be comprised using electrical good conductors, such as iron, phosphor bronze, and a copper alloy. In addition, in order to improve the reflectance of light from the light emitting element 10, the surface of the lead electrodes 30 and 32 can be subjected to metal plating such as silver, aluminum, copper or gold before the light emitting element 10 is mounted. Moreover, in order to improve the reflectance of the surface of the lead electrodes 30 and 32, it is preferable to make it smooth.

  The areas of the first lead electrode 30 and the second lead electrode 32 (the areas of the first lead terminal 301 and the second lead terminal 321) may be equal or one may be wider than the other. For example, as shown in FIG. 1, the second lead terminal 321 may be wider than the first lead terminal 301 and the light emitting element 10 may be die-bonded to the second lead terminal 321. When the light emitting element 10 is die-bonded to the second lead terminal 321, if the die-bonding material spreads over the entire second lead terminal 321, the bonding between the second lead terminal 321 and the conductive wire 40 is hindered by subsequent wire bonding. There is a fear. Therefore, a bleed prevention wall 24 (see FIGS. 1 and 2) may be provided on the surface of the second lead terminal 321. If the bleed prevention wall 24 is formed from the same material as the package 20, the package 20 and the bleed prevention wall 24 can be formed simultaneously.

(Conductive wire 40)
The conductive wire 40 can be formed of any metal material as long as appropriate wire bonding is possible, but in order to obtain the light emitting device 1 having high bonding strength and high reliability, Au, Cu Preferably, it is formed from a metal material including one selected from the group consisting of Al, W, and stainless steel. In particular, Au or an Au alloy is a metal material that has good ohmic properties with the electrode 12 of the light-emitting element 30, good mechanical connectivity (bonding property), and good electrical and thermal conductivity. Therefore, it is suitable for the conductive wire 40.

(Package 20)
The package 20 may be formed of any material as long as it can protect the light emitting element 10 and the like. Especially, it is preferable that it is a material which has insulation and light-shielding properties, such as a ceramic and milky white resin. As the resin material, a thermoplastic resin such as an aromatic polyamide resin or a thermosetting resin such as an epoxy resin can be used. By a known method (for example, injection molding for a thermoplastic resin, transfer molding for a thermosetting resin, etc.) Can be molded.
Further, the package 20 is a type based on a lead frame (for example, a surface mount type as shown in FIGS. 1 and 2, a shell type, etc.), a ceramic substrate on which electrodes are wired, A glass epoxy substrate type can be used.

(Coating film 72)
The coating film 72 can be an inorganic coating or an organic coating. As the inorganic coating, a material having high transmittance such as SiO ₂ , Al ₂ O ₃ , ZnO, silicate glass, and glass is preferable. As the organic coating, an acrylic resin, a fluororesin, a silicone resin, a modified silicone resin, an epoxy resin, a paraxylylene resin, or the like, which is a resin having low light absorption and high heat resistance and light resistance is preferable. The coating film can be coated at a desired position by application, vapor deposition, dipping, spraying, or the like.

<Modification>
A modification of the present embodiment is shown in FIG. The light emitting device 1 uses the light emitting element 10 that can be conducted from the mounting surface side, thereby conducting the light emitting element 10 and the second lead terminal 321 with a conductive die bond material (Ag paste or the like), and emitting light instead. This is different from the first embodiment in that the number of conductive wires 40 connected to the element 10 is one.

  Compared with the light emitting device 1 of FIG. 1, the light emitting device 1 of FIG. 12 halves the number of conductive wires 40, the number of times of wire bonding, and the amount of conductive wires used. Therefore, even in the conventional light emitting device without the metal film 70, the light absorption by the conductive wire 40 or the like was relatively small. However, if the conductive wire 40 and the lead terminals 301 and 321 are covered with the metal film 70 as in the present invention, light absorption by the conductive wire 40 is further reduced, so that the light extraction efficiency can be improved.

<Embodiment 2>
The light emitting device 1 shown in FIG. 13 is a type including a package based on a lead frame, as in the first embodiment. The first embodiment is different from the first embodiment in the arrangement of the light emitting element 10, the wiring of the conductive wire 40, and the shapes of the first lead electrode 30 and the second lead electrode 32. Further, in the present embodiment, in order to mount the light emitting element 10, a mounting portion 36 different from the lead electrode is provided.

In the present embodiment, as shown in FIG. 13, adjacent light emitting elements 10 are connected by a conductive wire 40, and a plurality of light emitting elements 10 are electrically connected in series. In this wiring method, the conductive wire 40 is thermocompression bonded to the light emitting element 10 in the middle of the first bond 50 and the second bond 60. In the present specification, such a thermocompression bonding portion is referred to as “stitch bond 68”, and the wiring form of the conductive wire 40 using the stitch bond 68 is referred to as “stitch wire wiring”.
Compared to the wiring shown in FIG. 1 (referred to as “triangular loop wiring” in this specification), the stitch wire wiring as shown in FIG. 13 has a lower material cost because the conductive wire length per element is shorter. Since the number of wire bonding per element (including the stitch bond 68) is also small, the manufacturing time can be shortened.

  In the stitch wire wiring, the distance that the conductive wire 40 passes on the light emitting surface of the light emitting element 10 is longer than that of the triangular loop wiring. Therefore, the effect of suppressing light absorption when the conductive wire 40 is covered with the metal film 70 is high, and the improvement of the light extraction efficiency of the light emitting device 1 is remarkable.

  In the present embodiment, the mounting portion 36 is provided separately from the lead electrodes 30 and 32, and the light emitting element 10 is mounted thereon. The mounting portion 36 is formed on the lead frame 34 together with the first lead electrode 30 and the second lead electrode 32 in “1. Molding of the package 20” in the manufacturing process described in the first embodiment. It can be formed by being included inside and separated from the lead frame 34 in “6. Cut forming process”.

  With respect to the light-emitting device 1 having the configuration shown in FIGS. 1 and 13, a plurality of samples having different configurations are produced and a lighting experiment is performed.

<A. About preparation of sample for measurement>
(1. Molding of package 20)
As a measurement sample package, a lead frame type and a substrate type were prepared. In the case of the lead frame type package, a copper alloy lead frame was used, and an Ag film was formed on the surface of the lead frame for the sample described as “Aggregating material for lead terminals”. As the package material, a thermoplastic resin (polyphthalamide) is used and molded by injection molding.
In the case of the substrate type, an Al ₂ O ₃ ceramic substrate or a glass epoxy substrate on which electrode wiring is formed is used.

(2. Die bonding process)
The light emitting element 10 is die-bonded to each package by resin bonding using a silicone resin adhesive, a modified silicone resin adhesive, an epoxy resin adhesive, or the like, or metal bonding using a solder material such as Au—Sn.

(3. Wire bonding process)
The light emitting element 10 and the lead terminals 301 and 321 are energized using a gold wire having a diameter of 25 μm.

(4. Electroplating process)
The electroplating step is performed in the order of pretreatment (water washing), strike plating (water washing), main plating (water washing), water washing, and drying.

(Preprocessing)
In the pre-treatment, the surface-attached contaminants (dirt, oil, sweat / fingerprint, organic matter, metal powder, etc.) on the exposed surfaces of the current-carrying members such as lead electrodes 30 and 32, and surface-attached corrosion products (oxides, sulfides, Dynamic surface film, etc.) and surface adsorbed substances (adsorbed organic compounds, adsorbed moisture, adsorbed gas components, etc.) are removed to activate the exposed surface. An aqueous potassium cyanide solution is used as the pretreatment liquid, and the lead frame 34 is immersed in the treatment liquid. During the treatment, the pretreatment liquid is stirred with a stirring device. After the treatment, the lead frame 34 is washed with running pure water.

(Strike plating)
Strike plating is performed by bathing an Ag strike plating solution. During energization, the plating solution is stirred with a stirring device. After the plating, the lead frame 34 is washed with running pure water.

(Main plating)
The main plating is performed using a plating solution prepared so as to obtain a desired metal film or an alloy film having a desired eutectoid ratio. During energization, the plating solution is stirred with a stirrer to form a metal film 70 having a film thickness of 0.1 to 10.0 μm. After the plating, the lead frame 34 is washed with running pure water.

(Washing and drying)
The lead frame 34 after the completion of plating is washed with flowing pure water. Thereafter, water drops are removed with an air blower and dried.

(5. Sealing process)
A thermosetting resin as a sealing member is dropped onto the package. As the thermosetting resin, a resin containing 30 parts by weight of YAG phosphor and 5 parts by weight of silicon oxide as a light diffusing agent is used for 100 parts by weight of silicone resin and cured at 150 ° C. for 5 hours.

(6. Cut forming process)
The package is separated from the lead frame to obtain a light emitting device.

<B. About preparation conditions of sample for measurement>
In this example, the preparation conditions to be changed when preparing the measurement sample are (1) “lead terminal coating material”, (2) “conductive wire material” (3) “metal film material”, (4) “Number of mounted light emitting elements”, (5) “Number of wires”, (6) “Wiring form of conductive wire”, (7) “Surface treatment”, and (8) “Type of package” Item. The contents of these creation conditions will be briefly described.

(1) “Coating material of lead terminal” indicates a covering material when the lead terminals 301 and 321 are covered before the light emitting element 10 is mounted. As the coating material, a metal material having a high reflectance with respect to light emitted from the light emitting element 10 is suitable.
(2) “Conductive wire material” indicates the material used for the conductive wire 40.
(3) “Material of metal film” indicates a metal material forming the metal film 70 of the present invention. Table 1 shows the composition ratio of the “metal film material” used in this example and the reflectance of each material with respect to light having a wavelength of 450 nm.
(4) “Number of light emitting elements mounted” is the number of light emitting elements 10 mounted on one light emitting device 1. As the “number of mounted light emitting elements” increases, the output of the light emitting device 1 also increases.
(5) “Number of wires” is the number of conductive wires 40 connected to one light emitting element 10. The light-emitting device 1 with one “number of wires” is the light-emitting device 1 as shown in FIG. 12, and the light-emitting device 1 with “two wires” is the light-emitting device as shown in FIG. Device 1.
(6) “Wiring form of the conductive wire” is a wiring form of the conductive wire 40 connected to the light emitting element 10. In this embodiment, either a triangular loop wiring as shown in FIG. 1 or a stitch wire wiring as shown in FIG. 13 is used.
(7) “Surface treatment” is to treat the surface of the metal film 70 with, for example, a coating agent or the like.
(8) “Package type” indicates whether the type is a lead frame type or a substrate type.

  In all measurement samples, a blue light-emitting diode (emission wavelength λ = 453 nm) is used as the light-emitting element 10.

<C. Output measurement of measurement sample>
The output of each measurement sample is obtained by energizing the measurement sample with 400 mA and measuring the luminous flux of the light emitting device with an integrating sphere.

  The experimental results obtained are discussed below. “Output (%)” of each measurement sample is a relative value of the output of each light emitting device when the output of the light emitting device as a reference (Comparative Example 1 described later) is 100%.

<1. Effect of coating with metal film 70>
Table 2 summarizes the relationship between the manufacturing conditions of the light emitting device and the effect of coating with the metal film 70. (Ag) is described in “Lead terminal coating material” in Examples 1 and 3, although the lead terminals 301 and 321 are not covered before the light emitting element 10 is mounted. By covering the metal film 70, it is meant that the lead terminals 301 and 321 of the obtained light emitting device 1 are covered with an Ag film. Further, the conductive wire of Comparative Example 4 uses a composite wire in which an Au core material is coated with an Ag film, and (Ag) is described in “Metal film material” because the composite wire is an Ag film. It means that it is covered with.

  Except for the preparation conditions described in the table, the number of light emitting elements mounted: 6, the number of wires: 2/1 element, conductive wire wiring form: triangular loop wiring, surface treatment: none, package type: lead frame type It has become.

  When Example 1 (metal film: Ag) is compared with Comparative Example 2 (without metal film), the output of the light-emitting device 1 is obtained by covering the conductive members such as the conductive wires 40 and the lead terminals 301 and 321 with the Ag film. Is about 1.4 times from 82% to 115%. Moreover, when Example 1 and Comparative Example 4 (Au core material / Ag film composite wire) are compared, the output is higher when the Au wire is electroplated with an Ag film after wire bonding than with the composite wire. . This is considered to be because, in Comparative Example 4, the core material 142 was exposed from the first bond 150, the second bond 160, and the end face 162 of the wire as shown in FIGS. .

  In comparison between Comparative Example 1 (lead terminal: Ag coated) and Comparative Example 2 (lead terminal: uncoated), the light extraction of the light emitting device can be performed by previously coating the lead electrodes 30 and 32 with metal such as Ag. It turns out that efficiency increases. However, when Example 1 (lead terminal: no coating) and Example 2 (lead terminal: Ag coating) were compared, both showed the same output (115%). This is because, in the light emitting device of Example 1, when the Ag film 70 is formed after the light emitting element is mounted, the entire energizing member is covered with the Ag film by electroplating, and lead terminals 301 and 321 which are one of the energizing members. This is also because it is coated with an Ag film.

  Also, Example 1 (with Au wire / Ag film), Example 3 (with Cu wire / Ag film), Comparative Example 2 (without Au wire / Ag film) and Comparative Example 3 (without Cu wire / Ag film) In comparison, when the Ag film is not formed and the conductive wire 40 is exposed, the output of the light emitting device 1 varies depending on the type of the conductive wire 40 (Comparative Example 2: 82%, Comparative Example 3: 80%). However, when the conductive wire 40 is covered with the metal film 70, the light emitting device 1 with high output (Example 1 and Example 3: 115%) can be obtained regardless of the material of the conductive wire 40.

<2. Material of Metal Film 70>
The effects of the material of the metal film 70 are summarized in Table 3.
Except for the preparation conditions described in the table, lead terminal coating material: Ag, conductive wire material: Au, number of light emitting elements mounted: 6, number of wires: 2/1 element, conductive wire wiring form: triangle Loop wiring, surface treatment: none, package type: lead frame type.

  Examples 2 and 4 to 6 are light emitting devices in which a metal film 70 is formed from different metal materials. Referring to Table 1 and Table 3, in Example 2 in which the metal film 70 is formed from Ag having a high reflectance, the output of the light emitting device is the highest (115%), and the light emitting device 1 is accompanied by a decrease in the reflectance of the metal material. Output decreases. (Example 4: 111, Example 5: 110%, Example 6: 105%). However, if the reflectance is 90% or more of the metal material (Examples 4 to 6), the output is higher than that of the light emitting device not provided with the metal film 70 (Comparative Example 1).

<3. Number of mounted light emitting elements 10 and number of conductive wires>
A metal film 70 is formed in a form in which two conductive wires 40 are connected per light emitting element as shown in FIG. 1 and a form in which one conductive wire 40 is connected per light emitting element as shown in FIG. Table 4 summarizes the effects.
The “output change rate” in the table is obtained by dividing the output P ₂ of the light emitting device 1 “with metal film” by the output P ₁ of the light emitting device 1 without “metal film”.

  Except for the preparation conditions listed in the table, lead terminal coating material: Ag, conductive wire material: Au, metal film material: Ag, conductive wire wiring form: triangular loop wiring, surface treatment: none, package type: Lead frame type.

  By forming the metal film 70, the output was improved regardless of the number of the light emitting elements 1 mounted. The effect of improving the output became higher as the number of mounted light emitting elements 1 increased. If the number of mounted light emitting elements 1 is increased, the total length of the conductive wires 40 used in proportion to the number of the light emitting elements 1 is increased. Therefore, it is considered that the effect of the metal film 70 becomes remarkable.

  Further, by forming the metal film 70, the output was improved regardless of the number of the conductive wires 40. The effect of improving the output tends to increase as the number of the conductive wires 40 increases. If the number of the conductive wires 40 is increased, the total length of the conductive wires 40 is also increased. Therefore, it is considered that the effect of the metal film 70 becomes remarkable. However, the output improvement rates may not match even with the same number. This is because the length of each conductive wire 40 may differ depending on the arrangement of the light emitting element 1 and the lead terminal (see FIG. 1), so that the number of the conductive wires 40 and the total length of the conductive wires 40 are completely different. It is assumed that this is because there are cases that are not proportional to.

<4. Conductive wire wiring configuration>
Table 5 summarizes the effects of the metal film 70 on the triangular loop wiring as shown in FIG. 1 and the stitch wire wiring as shown in FIG.

  Except for the production conditions described in the table, the lead terminal coating material: Ag, the conductive wire material: Au, the metal film material: Ag, the number of mounted light emitting elements: 6, the number of wires: 2/1 element, Surface treatment: None, Package type: Lead frame type.

  In the stitch wire wiring, although the total length of the conductive wire 40 to be used can be shortened, the length of the conductive wire 40 stretched on the light emitting surface of the light emitting element 10 (that is, the conductive wire arranged at a position where light emission is easily absorbed). Therefore, the output when the metal film 70 is not formed is low. Therefore, it is considered that the effect when the metal film 70 is coated becomes remarkable in the stitch wire wiring. As can be seen from the table, an output comparable to any wiring was obtained after the metal film 70 was coated.

<5. Formation of coating film on metal film 70 surface and durability effect of metal film 70 made of alloy>
Durability of a sample in which a coating film was formed on the surface of the metal film 70 (Examples 15 and 16) and a sample in which a silver alloy (Ag—Au alloy) was used for the metal film 70 (Example 6) were tested. For comparison, Comparative Example 1 (without metal film) and Example 2 (with Ag film) were also tested. The test method was lighting at 1000 ° C. with a current of 400 mA at 85 ° C. For the output, the luminous flux of the light emitting device was measured with an integrating sphere, and the luminous flux immediately after lighting (lighting time 0 hour) was taken as 100%. The degree of output decrease after a 1000 hour lighting test was compared. An SiO ₂ film was used for the inorganic coating of Example 15, and an organic silicon compound was dropped and heated to form the surface of the metal film 70. An epoxy resin was used for the organic coating of Example 16, and the resin film was formed on the surface of the metal film by dropwise heating.

  Other than the preparation conditions described in the table, the lead terminal coating material: Ag, the conductive wire material: Au, the number of light emitting elements mounted: 6, the number of wires: 2/1 element, the wiring form of the conductive wires: triangular Loop wiring, package type: lead frame type.

  The output decreased most in Example 2 in which the Ag film 70 was formed, and then in Comparative Example 1 in which the metal film 70 was not formed. All the samples coated with the coating film suppressed the decrease in output, but the effect of suppressing the decrease in output due to the inorganic coating was particularly remarkable. In addition, Example 6 in which the silver alloy film was formed was also highly effective in suppressing the output drop as in the sample with the inorganic coating. This result is considered to be because the Ag film was discolored due to sulfuration or the like, and the output was greatly reduced in the long term. The reason why the output of Example 2 was significantly lower than that of Comparative Example 1 was that the lead terminal was covered with an Ag film in Comparative Example 1, whereas Example 2 was a conductive wire in addition to the lead terminal. Is also covered with the Ag film, it is presumed that the influence of the output decrease when the Ag film is discolored appears more remarkably. Further, it is considered that by coating the Ag film with the coating film, discoloration of the Ag film due to sulfidation or the like is suppressed, and the output is less likely to be lowered even after lighting for a long time. In addition, it is considered that the silver alloy hardly undergoes sulfidation and the like, so that the discoloration did not occur even when the coating film was not coated, and the output was hardly reduced.

<6. Difference in effect by package type>
Table 7 summarizes the effect of the metal film 70 when three types of packages (lead frame, ceramic substrate, and glass epoxy substrate) are used.
Except for the preparation conditions described in the table, lead terminal coating material: Ag, conductive wire material: Au, number of light emitting elements mounted: 6, number of wires: 2/1 element, conductive wire wiring form: triangle Loop wiring, surface treatment: None.

  As can be seen from Table 7, the output of the metal film 70 was improved in any package type.

  The light emitting device of the present invention can be used for various light sources such as illumination light sources, various indicator light sources, in-vehicle light sources, display light sources, liquid crystal backlight light sources, sensor light sources, traffic lights, in-vehicle parts, signboard channel letters, and the like. Can be used.

2 is a top view of the light emitting device according to Embodiment 1. FIG. It is sectional drawing of the light-emitting device which concerns on Embodiment 1 along the AA line of FIG. It is the elements on larger scale which expanded the part of the code | symbol B of FIG. It is the elements on larger scale which expanded the part of the code | symbol C of FIG. FIG. 3 is a cross-sectional view for explaining a coating example of a coating film in the light-emitting device according to Embodiment 1. FIG. 3 is a cross-sectional view for explaining a coating example of a coating film in the light-emitting device according to Embodiment 1. FIG. 3 is a cross-sectional view for explaining a coating example of a coating film in the light-emitting device according to Embodiment 1. FIG. 3 is a cross-sectional view for explaining a coating example of a coating film in the light-emitting device according to Embodiment 1. FIG. 3 is a cross-sectional view for explaining a coating example of a coating film in the light-emitting device according to Embodiment 1. 6 is a schematic top view illustrating a manufacturing process for the light-emitting device according to Embodiment 1. FIG. 5 is a schematic cross-sectional view illustrating an electroplating process of the light emitting device according to Embodiment 1. FIG. FIG. 6 is a top view illustrating a modification of the light emitting device according to Embodiment 1. 6 is a top view of a light emitting device according to Embodiment 2. FIG. It is the elements on larger scale explaining the wire bonding of the conventional light-emitting device. It is the elements on larger scale explaining the wire bonding of the conventional light-emitting device.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Light emitting device, 10 Light emitting element, 12 electrodes, 20 packages, 30 Conductive member (first lead electrode), 301 Internal conductive part (first lead terminal), 302 External conductive part (external terminal), 32 Conductive member (second Lead electrode), 321 internal conductive part (second lead terminal), 322 external conductive part (external terminal), 40 conductive wire, 50 first bond, 60 second bond, 62 wire end face, 70 metal film, 72 coating film.

Claims (13)

A light-emitting device having a conductive wire that electrically connects an electrode of a light-emitting element and a conductive member,
The surface of the conductive wire at the joint portion between the conductive wire and at least one of the electrode of the light emitting element and the conductive member is covered with a metal film,
The light emitting device, wherein the reflectance of the metal film is higher than the reflectance of the conductive wire at the emission peak wavelength of the light emitting element.   The said metal film is continuously coat | covered over the surface of the said electrode or the surface of the said electrically-conductive member, and the surface of the said electrically conductive wire in the said junction part. Light emitting device. At least one end of the conductive wire has a ball shape,
The light emitting device according to claim 1, wherein the ball-shaped end portion has a collapsed shape.   The light emitting device according to claim 1, wherein at least one end face of the conductive wire is covered with the metal film.   The light emitting device according to claim 1, wherein the metal film includes a metal material containing Ag alloy or Ag. The emission peak wavelength of the light emitting element is 400 nm to 530 nm,
The light emitting device according to any one of claims 1 to 5, wherein the conductive wire includes a metal material including one selected from the group consisting of Au, Cu, Al, W, and stainless steel.   The light emitting device according to claim 1, wherein a surface of the metal film is further covered with a coating film.   The light emitting device according to claim 7, wherein the coating film further covers the light emitting element. The light emitting device further includes a package having a recess,
The conductive member includes an internal conductive part exposed in the recess, and an external conductive part that extends from the internal conductive part to the outside through the package,
The light emitting device according to claim 7 or 8, wherein the coating film is continuously coated over the inner surface of the recess and the surface of the internal conductive portion.   The light emitting device according to claim 9, wherein the coating film is continuously coated over an outer surface of the package and a surface of the external conductive portion. The light emitting device further includes a sealing resin for sealing the light emitting element,
The light emitting device according to claim 1, wherein a surface of the sealing resin is covered with a coating film.   The light-emitting device according to claim 7, wherein the coating film is made of an inorganic coating or an organic coating. A method of manufacturing a light-emitting device having a conductive wire that electrically connects an electrode of a light-emitting element and a conductive member,
A wire bonding step of connecting the electrode of the light emitting element and the conductive member with the conductive wire;
An electroplating step of covering the electrode of the light emitting element, the conductive member, and the conductive wire with a metal film by an electroplating method.

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