JP2007080990A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
JP2007080990A
JP2007080990A JP2005264754A JP2005264754A JP2007080990A JP 2007080990 A JP2007080990 A JP 2007080990A JP 2005264754 A JP2005264754 A JP 2005264754A JP 2005264754 A JP2005264754 A JP 2005264754A JP 2007080990 A JP2007080990 A JP 2007080990A
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JP
Japan
Prior art keywords
light emitting
wire
emitting device
light
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005264754A
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Japanese (ja)
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JP4918238B2 (en
Inventor
Takenori Yasuda
剛規 安田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2005264754A priority Critical patent/JP4918238B2/en
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to CN2006800334063A priority patent/CN101263612B/en
Priority to EP06798073A priority patent/EP1925037A4/en
Priority to KR1020087007978A priority patent/KR100978028B1/en
Priority to US12/066,591 priority patent/US7812358B2/en
Priority to PCT/JP2006/318462 priority patent/WO2007032520A1/en
Priority to TW095133877A priority patent/TW200729547A/en
Publication of JP2007080990A publication Critical patent/JP2007080990A/en
Application granted granted Critical
Publication of JP4918238B2 publication Critical patent/JP4918238B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

<P>PROBLEM TO BE SOLVED: To prevent the absorption of green-ultraviolet emitted light by an Au wire or a Cu wire employed for the wire bonding of a semiconductor light emitting device and the reduction of a light emitting output and as the deterioration of light emitting efficiency caused by absorption. <P>SOLUTION: The Au wire or the Cu wire is employed which is obtained by applying the coating of a substance for increasing a reflection factor on the Au wire or Cu wire for the wire bonding of the semiconductor light emitting device. A metal containing at least one kind of Ag, Al, Rh or one kind of these substances is employed preferably as the coating substance. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は発光装置、特にボンディングワイヤーの光の反射を高めた発光装置に関する。   The present invention relates to a light-emitting device, and more particularly to a light-emitting device with enhanced light reflection of a bonding wire.

ＬＥＤの高出力化、高効率化により、ＬＥＤが利用されるアプリケーションが拡大している。従来の有色のインジケータ用途、屋外大型ディスプレー用途に加え、白色の携帯電話のバックライト光源、ヘッドライト、照明光源へと急速に使用量が増加している。これらＬＥＤのニーズに応える為には、さらなる高出力化、高効率化が必要となっている。   Due to the higher output and higher efficiency of LEDs, applications in which LEDs are used are expanding. In addition to conventional colored indicator applications and large outdoor display applications, usage is rapidly increasing to white mobile phone backlight light sources, headlights, and illumination light sources. In order to meet the needs of these LEDs, further higher output and higher efficiency are required.

窒化物化合物半導体からなる緑〜紫外の発光ダイオードにおいては、サファイア基板の表面に窒化物化合物半導体を積層し、基板の反対の面にｐ電極、ｎ電極を形成し、２本のＡｕ線でパッケージリードに接続するタイプ（図１参照）と、ＳｉＣ基板の表面に窒化物化合物半導体を積層し、基板の裏面にｎ電極を、窒化物化合物半導体の表面にｐ電極を形成し、基板の裏面と１本のＡｕ線を介してパッケージリードに接続するタイプの２種が一般的である。その際、Ａｕ線は緑〜紫外領域の光を吸収する為、発光出力をロスしている部分である。 Ａｕ線の吸収問題に関して、発光素子全体を包囲する樹脂モールド中に発光波長より長波長の可視光に変換する蛍光体を含有させ、Ａｕ線に光が当たる前にＡｕ線の光吸収率が低い長波長光に変換することでロスを低減する方法を開示している（特許文献１参照）。   In a green to ultraviolet light emitting diode made of a nitride compound semiconductor, a nitride compound semiconductor is laminated on the surface of a sapphire substrate, a p-electrode and an n-electrode are formed on the opposite surface of the substrate, and packaged with two Au wires A type connected to the lead (see FIG. 1), a nitride compound semiconductor is laminated on the surface of the SiC substrate, an n-electrode is formed on the back surface of the substrate, a p-electrode is formed on the surface of the nitride compound semiconductor, Two types are generally connected to a package lead via a single Au wire. At that time, the Au wire absorbs light in the green to ultraviolet region, and thus is a portion that loses the light emission output. Regarding the Au wire absorption problem, a phosphor that converts visible light longer than the emission wavelength is contained in a resin mold that surrounds the entire light emitting element, and the light absorption rate of the Au wire is low before the light hits the Au wire. A method of reducing loss by converting to long wavelength light is disclosed (see Patent Document 1).

一方、ワイヤーボンド用の金属細線にコーティングする技術としては、コストダウンを目的として錫を被覆した金線の例が存在する（特許文献２参照）。また、コストダウンと接着特性の両立を目的に銅、アルミ、金からなる金属細線の表面にそれよりも純度の高い同種の金属を被覆している半導体素子の結線用ボンディングワイヤーの例が開示されている（特許文献３参照）。しかし、これらの方法ではボンディングワイヤーのところでは光の反射率は高まらない。
特許２９００９２８号公報 特開昭６２−２２７５９２号公報 特開昭６２−２８７６３３号公報 On the other hand, as a technique for coating a thin metal wire for wire bonding, there is an example of a gold wire coated with tin for the purpose of cost reduction (see Patent Document 2). In addition, an example of a bonding wire for connecting a semiconductor element in which the surface of a fine metal wire made of copper, aluminum, and gold is coated with the same type of metal with higher purity for the purpose of achieving both cost reduction and adhesive properties is disclosed. (See Patent Document 3). However, these methods do not increase the light reflectivity at the bonding wire.
Japanese Patent No. 2900928 JP-A-62-227592 JP-A 62-287633

本発明は緑〜紫外域に光吸収があるＡｕやＣｕのボンディングワイヤーによる光吸収ロスを解決する手段を提供すること、またそれによる高出力・高効率の発光装置を提供することが課題である。さらに緑〜紫外の単色の短波長発光素子に限らず、緑〜紫外の短波長発光素子を励起源として波長変換物質を加えた白色ＬＥＤや有色ＬＥＤの高出力化・高効率化を図ることが課題である。   It is an object of the present invention to provide means for solving light absorption loss due to Au or Cu bonding wires that absorb light in the green to ultraviolet range, and to provide a high-output and high-efficiency light-emitting device thereby. . Furthermore, not only green to ultraviolet single-color short-wavelength light emitting elements, but also high output and high efficiency of white LEDs or colored LEDs to which a wavelength conversion substance is added using a green to ultraviolet short-wavelength light emitting element as an excitation source. It is a problem.

本発明はボンディングワイヤーのＡｕ線やＣｕ線の表面にＬＥＤ発光に対する反射率を高める物質をコーティングし、ボンディングワイヤーの光反射率を高めることにより上記の課題を解決したものである。
即ち、本発明は以下の発明からなる。
（１）発光素子にワイヤーボンディングを有する発光装置において、ワイヤーボンディングのワイヤーに発光素子の発光波長に対して反射率を高める物質でコーティングされた金または銅を主成分とする金属細線を用いたことを特徴とする発光装置。
（２）コーティング物質が、Ａｇ、Ａｌ、Ｒｈの少なくとも一種あるいはこれらの少なくとも一種を含む金属であることを特徴とする上記（１）に記載の発光装置。
（３）金属細線の太さが１０μｍ〜１０００μｍであることを特徴とする上記（１）または（２）に記載の発光装置。 This invention solves said subject by coating the substance which raises the reflectance with respect to LED light emission on the surface of Au wire and Cu wire of a bonding wire, and raising the light reflectance of a bonding wire.
That is, this invention consists of the following invention.
(1) In a light-emitting device having wire bonding in a light-emitting element, a metal wire mainly composed of gold or copper coated with a substance that increases the reflectance with respect to the emission wavelength of the light-emitting element is used for the wire bonding wire. A light emitting device characterized by the above.
(2) The light-emitting device according to (1), wherein the coating substance is at least one of Ag, Al, and Rh or a metal containing at least one of these.
(3) The light-emitting device according to (1) or (2) above, wherein the thickness of the thin metal wire is 10 μm to 1000 μm.

（４）コーティングが電解メッキ法、無電解メッキ法、真空蒸着法、化学蒸着法(ＣＶＤ法)、スパッタ法、溶融法、プラズマスプレー法、超音波法、金属粉入り樹脂塗布法、還元法、イオンプレーティング法、のいずれかで形成されたものであることを特徴とする上記（１）〜（３）のいずれかに記載の発光装置。
（５）コーティング層の厚さが１ｎｍ〜金属細線直径の１０％であることを特徴とする上記（１）〜（４）のいずれかに記載の発光装置。
（６）発光素子が載置されるリード面の一部または大部分がＡｇ、Ａｌ、Ｒｈの少なくとも一種あるいはこれらを含む金属でコーティングされている事を特徴とする上記（１）〜（５）のいずれかに記載の発光装置。
（７）上記（１）〜（６）に記載の発光装置に発光素子の発光の一部あるいは全部を長波長光に変換する蛍光体を含むことを特徴とする発光装置。 (4) Coating is electrolytic plating method, electroless plating method, vacuum deposition method, chemical vapor deposition method (CVD method), sputtering method, melting method, plasma spray method, ultrasonic method, resin coating method with metal powder, reduction method, The light-emitting device according to any one of (1) to (3), wherein the light-emitting device is formed by any one of ion plating methods.
(5) The light emitting device according to any one of the above (1) to (4), wherein the thickness of the coating layer is 1 nm to 10% of the diameter of the fine metal wire.
(6) The above (1) to (5), wherein a part or most of the lead surface on which the light emitting element is mounted is coated with at least one of Ag, Al, Rh or a metal containing these. The light emitting device according to any one of the above.
(7) A light-emitting device characterized in that the light-emitting device according to any one of (1) to (6) includes a phosphor that converts part or all of the light emitted from the light-emitting element into long-wavelength light.

本発明によりＡｕ線やＣｕ線の光吸収をほぼ完全に抑制することが可能となり、半導体発光装置の更なる高出力化・高効率化が実現した。さらに緑〜紫外の単色の短波長発光素子に限らず、緑〜紫外の短波長発光素子を励起源として波長変換物質を加えた白色ＬＥＤや有色ＬＥＤの高出力化・高効率化を図ることが出来た。   According to the present invention, light absorption of Au wire and Cu wire can be suppressed almost completely, and further increase in output and efficiency of a semiconductor light emitting device can be realized. Furthermore, not only green to ultraviolet single-color short-wavelength light emitting elements, but also high output and high efficiency of white LEDs or colored LEDs to which a wavelength conversion substance is added using a green to ultraviolet short-wavelength light emitting element as an excitation source. done.

図２に本発明の発光装置の一例を断面図で示す。
図における６が光の反射率の高い物質でコーティングしたＡｕ線やＣｕ線である。このコーティング物質は、光の反射率がＡｕやＣｕより高いものであればよいが、反射率特性上、Ａｇ、Ａｌ、Ｒｈの少なくとも一種あるいはこれらの少なくとも一種を含む金属が好ましい。これらの金属を含む場合は５０質量％以上含むのがよい。
Ａｕ線およびＣｕ線の太さは１０μｍ〜１０００μｍの範囲が好ましい。砲弾型ＬＥＤで用いられているチップは０．３ｍｍ角程度であり、金属細線を接続するパッドは１００μｍ角程度であるため、数十μｍ太さの金属細線が用いられ、一方、パワーモジュール用途の数ｍｍサイズのチップには数百μｍ太さの金属細線が使われるからである。またコーティング層の厚さは１ｎｍ〜金属細線直径の１０％の範囲が好ましい。１ｎｍ未満では反射率を向上させるには薄すぎ、金属細線直径の１０％超ではワイヤーボンディング時の密着性を損なうからである。コーティング方法は真空蒸着法、化学蒸着法(ＣＶＤ法)、スパッタ法、溶融法、プラズマスプレー法、超音波法、金属粉入り樹脂塗布法、還元法、イオンプレーティング法、などを用いることが出来る。 FIG. 2 is a sectional view showing an example of the light emitting device of the present invention.
In the figure, reference numeral 6 denotes an Au wire or a Cu wire coated with a substance having a high light reflectance. The coating material only needs to have a light reflectance higher than that of Au or Cu, but is preferably a metal containing at least one of Ag, Al, and Rh or at least one of these in view of reflectance characteristics. When these metals are included, it is preferable to include 50% by mass or more.
The thickness of the Au wire and Cu wire is preferably in the range of 10 μm to 1000 μm. The chip used in the bullet type LED is about 0.3 mm square, and the pad for connecting the thin metal wire is about 100 μm square, so a thin metal wire with a thickness of several tens of μm is used. This is because a thin metal wire having a thickness of several hundred μm is used for a chip having a size of several mm. The thickness of the coating layer is preferably in the range of 1 nm to 10% of the metal fine wire diameter. This is because if it is less than 1 nm, it is too thin to improve the reflectivity, and if it exceeds 10% of the diameter of the fine metal wire, the adhesion during wire bonding is impaired. As the coating method, a vacuum deposition method, a chemical vapor deposition method (CVD method), a sputtering method, a melting method, a plasma spray method, an ultrasonic method, a metal powdered resin coating method, a reduction method, an ion plating method, or the like can be used. .

図において２は発光素子、３は封止樹脂、４は樹脂成形体、５はリード、６はＡｇをコーティングしたＡｕ線である。
本発明は、発光ダイオード（ＬＥＤ）、面発光レーザ（ＶＣＳＥＬ）、を初めとしたワイヤーボンディングを行うあらゆる発光装置に適用可能である。
本発明は、Ａｕ線やＣｕ線の吸収が顕著な紫外〜緑の短波長域で発光するＡｌＧａＩｎＮ系を初めとする窒化物化合物半導体系、ＺｎＯ系を初めとする酸化物化合物半導体系、ＣｄＺｎＳＳｅ系を初めとするセレン化物系、硫化物系化合物半導体系の発光素子に適用する事が望ましい。緑〜赤に発光するＡｌＧａＩｎＰ系を初めとする燐化物系、ＡｌＧａＡｓ系を初めとするヒ素化物系の発光素子に対しても適応に何ら問題はないどころか、青色、緑色発光素子と隣接して配置される、いわゆる３ｉｎ１パッケージ（３色のチップが１つのパッケージに入っているＬＥＤパッケージ）における赤色発光素子に対して好ましく本発明を適用できる。
本発明は、導電性基板上に積層され、エピ（エピタキシャル）面側と基板裏面に電極を配置し、エピ面側からは１本または複数本のボンディングワイヤーにて、基板側からは導電性接着剤等を介してパッケージの外部リード５に接続するタイプの発光素子に対しても有効である。 In the figure, 2 is a light emitting element, 3 is a sealing resin, 4 is a resin molding, 5 is a lead, and 6 is an Au wire coated with Ag.
The present invention is applicable to any light emitting device that performs wire bonding, such as a light emitting diode (LED) and a surface emitting laser (VCSEL).
The present invention relates to nitride compound semiconductor systems such as AlGaInN-based materials that emit light in the ultraviolet to green short wavelength region where absorption of Au lines and Cu lines is remarkable, oxide compound semiconductor systems including ZnO-based systems, and CdZnSSe-based systems. It is desirable to apply to selenide-based and sulfide-based compound semiconductor-based light emitting devices such as Arranged adjacent to blue and green light-emitting elements, there is no problem in adapting to phosphide-based light emitting elements such as AlGaInP, which emits light from green to red, and arsenide-based light emitting elements such as AlGaAs. The present invention can be preferably applied to a red light emitting element in a so-called 3-in-1 package (an LED package in which chips of three colors are included in one package).
The present invention is laminated on a conductive substrate, electrodes are arranged on the epi (epitaxial) surface side and the back surface of the substrate, one or a plurality of bonding wires from the epi surface side, and conductive bonding from the substrate side. This is also effective for a light emitting element of a type that is connected to the external lead 5 of the package through an agent or the like.

本発明の発光装置において、発光素子が載置されるリードの一部あるいは大部分がＡｇ、Ａｌ、Ｒｈの少なくとも一種あるいはこれらを含む金属でコーティングされていることが好ましい。これらの金属を含む場合は５０質量％以上含むのがよい。これによって光の反射率が高まり、発光出力が増大する。
また、本発明は、発光素子をサブマウントに載置し、サブマウントから１本または２本以上のワイヤーにてパッケージの外部リードに接続した場合にも有効である。
また、チップサイズは０．２ｍｍ角以下〜１ｍｍ角を超えるものまで、形状も正方形、長方形、円、楕円などあらゆる大きさ・形の発光素子に効果を発揮する。
本発明は、蛍光体と組み合わせても良い。青色の発光素子に対し、黄色発光の蛍光体を塗布した白色発光素子や、紫外光の発光素子に対し、赤、緑、青の蛍光体を塗布した白色発光素子について適用しても効果が高い。前記塗布の代わりに封止樹脂の中に蛍光体を分散配置することも出来る。この例を図３に示す。図で７が蛍光体を含有させた封止樹脂である。 In the light emitting device of the present invention, it is preferable that a part or most of the lead on which the light emitting element is mounted is coated with at least one of Ag, Al, Rh or a metal containing these. When these metals are included, it is preferable to include 50% by mass or more. This increases the light reflectivity and increases the light emission output.
The present invention is also effective when a light emitting element is mounted on a submount and connected to an external lead of the package by one or more wires from the submount.
In addition, the present invention is effective for light emitting devices of any size and shape such as a square, rectangle, circle, ellipse, etc., having a chip size of 0.2 mm square or less to more than 1 mm square.
The present invention may be combined with a phosphor. Even when applied to white light emitting elements coated with yellow phosphors for blue light emitting elements and white light emitting elements coated with red, green, and blue phosphors for ultraviolet light emitting elements, the effect is high. . Instead of the application, phosphors can be dispersedly arranged in the sealing resin. An example of this is shown in FIG. In the figure, reference numeral 7 denotes a sealing resin containing a phosphor.

本発明におけるパッケージは、砲弾型パッケージ（ＤＯＭＥ）、ＰＣＢ基板を利用した表面実装ダイオードパッケージ（ＳＭＤ）、ＴＯＰタイプやＳＩＤＥビュータイプを初めとする横型のリードフレームを利用したＳＭＤ、パワーＬＥＤパッケージ、カンタイプパッケージ、その他カスタムパッケージなどの単体パッケージや、チップ・オン・ボード（ＴＯＢ）、チップ・オン・フィルム（ＴＯＦ）等、ワイヤーボンディングを利用するあらゆるパッケージ、モジュールに適用可能である。   The package in the present invention includes a shell type package (DOME), a surface mount diode package (SMD) using a PCB substrate, an SMD using a horizontal lead frame such as TOP type and SIDE view type, a power LED package, a can It can be applied to any package or module using wire bonding, such as a single package such as a type package or a custom package, a chip on board (TOB), or a chip on film (TOF).

以下に本発明を実施例に基づいて具体的に説明するが、本発明はこれらの実施例に限定されるものではない。
本発明による反射率を高めるためＡｇでコーティングしたＡｕ線を表面実装型ＬＥＤに適用した例を図２に示す。
ＬＥＤチップはサファイア基板上に積層されたＡｌＧａＩｎＮ系化合物半導体結晶からなり、エピ膜表面側にｎ電極とｐ電極が形成されているタイプである。サイズは０．３５ｍｍ角、高さ０．１ｍｍである。ｐ型透明電極としてＩＴＯが形成されており、その一部に不透明なワイヤーボンディング用のパッドが形成されている。ｎ電極はエッチングにより表出させたｎ型コンタクト層上に形成されており、ここにもワイヤーボンディング用のパッドが形成されている。これらｐ電極、ｎ電極のパッドの最表面はＡｕである。 EXAMPLES The present invention will be specifically described below based on examples, but the present invention is not limited to these examples.
FIG. 2 shows an example in which an Au wire coated with Ag is applied to a surface-mounted LED in order to increase the reflectance according to the present invention.
The LED chip is made of an AlGaInN-based compound semiconductor crystal stacked on a sapphire substrate, and has an n electrode and a p electrode formed on the epi film surface side. The size is 0.35 mm square and the height is 0.1 mm. ITO is formed as a p-type transparent electrode, and an opaque wire bonding pad is formed on a part thereof. The n-electrode is formed on the n-type contact layer exposed by etching, and a wire bonding pad is also formed here. The outermost surfaces of these p-electrode and n-electrode pads are Au.

表面実装ＬＥＤのパッケージのサイズは３．５ｍｍ×２．８ｍｍ、高さ１．８ｍｍである。リードフレームには反射率の高い白色の樹脂によるカップが形成されており、一対のインナーリードがカップ底面に表出する構造となっている。これらインナーリードの最表面はＡｇでコーティングされており、カップ底面のほぼ全面がＡｇ表面となる様、一対のリードのギャップは最小にされている。一対のインナーリードの形状は非対称であり、片方のインナーリードがパッケージ中心軸付近を占有する様に張り出している。
ＬＥＤチップは中心軸付近に張り出した片方のインナーリード上に熱硬化樹脂を用いて設置される。オーブンにて熱硬化樹脂を硬化させた後、ワイヤーボンダーにてＬＥＤチップと表面実装型ＬＥＤパッケージのインナーリードの間を１対のボンディングワイヤーにて接続した。この際、ボンディングワイヤーは純度４ＮのＡｕ線の表面を純度４ＮのＡｇでコーティングしたワイヤーを使用した。Ａｕ線のサイズは直径２５μｍであり、Ａｇコーティングの厚さは約０．５μｍであった。Ａｕ線へのＡｇコーティングは電気メッキにより実施した。 The size of the surface mount LED package is 3.5 mm × 2.8 mm, and the height is 1.8 mm. The lead frame is formed with a cup made of a white resin having a high reflectance, and has a structure in which a pair of inner leads are exposed on the bottom surface of the cup. The outermost surfaces of these inner leads are coated with Ag, and the gap between the pair of leads is minimized so that almost the entire bottom surface of the cup becomes the Ag surface. The shape of the pair of inner leads is asymmetric, and one of the inner leads protrudes so as to occupy the vicinity of the package center axis.
The LED chip is installed using a thermosetting resin on one inner lead protruding near the central axis. After the thermosetting resin was cured in an oven, the LED chip and the inner leads of the surface mount LED package were connected by a pair of bonding wires using a wire bonder. At this time, the bonding wire used was a wire in which the surface of a 4N purity Au wire was coated with 4N purity Ag. The size of the Au wire was 25 μm in diameter, and the thickness of the Ag coating was about 0.5 μm. Ag coating on Au wire was performed by electroplating.

Ａｕに対してＡｇの量が無視できる程である為、ボールボンディングしたチップ上のボールシェア強度はＡｇコーティングしていないＡｕ線に比べて、有意差は見られなかった。パッケージのインナーリードへのボンディングに対してもＡｇコーティングしていないＡｕ線に比べて、有意差が観測されなかった。
次に、熱硬化性の透明シリコン樹脂にてカップ内を樹脂封止した。オーブンにて樹脂硬化し、表面実装型ＬＥＤのサンプルを完成させた。
２０ｍＡ印加時のＡｇコーティング無しとＡｇコーティング有りの光出力の比較を行った。サンプル数は各２０点である。Ａｇコーティング無しが平均値１５．３ｍＷに対し、Ａｇコーティング有りが１６．０ｍＷであった。Ａｇコーティング有りの方が４．６％程、出力が高い。発光波長の平均値はそれぞれ４６０．１ｎｍ、４５９．９ｎｍであり、波長による差ではない。 Since the amount of Ag with respect to Au is negligible, the ball shear strength on the ball-bonded chip was not significantly different from that of the Au wire not coated with Ag. No significant difference was observed for bonding of the package to the inner lead as compared to the Au wire without Ag coating.
Next, the inside of the cup was sealed with a thermosetting transparent silicone resin. The resin was cured in an oven to complete a surface-mount type LED sample.
Comparison was made between the light output without Ag coating and with Ag coating when 20 mA was applied. The number of samples is 20 points each. The average value was 15.3 mW without Ag coating, and 16.0 mW with Ag coating. The output with Ag coating is as high as 4.6%. The average values of the emission wavelengths are 460.1 nm and 459.9 nm, respectively, which is not a difference depending on the wavelength.

また、Ａｇコーティング無しとＡｇコーティング有りについて、シリコン樹脂に黄色蛍光体を混入した試料を作製した。サンプル数は各２０点である。Ａｇコーティング無しが色度座標平均値（ｘ、ｙ）＝（０．３２０，０．３２６）、全光束平均値４．１２ｌｍに対し、Ａｇコーティング有りが色度座標平均値（ｘ、ｙ）＝（０．３２１、０．３２７）、全光束平均値４．２８ｌｍであり、３．９％の全光束増が確認された。ちなみに発光効率は、それぞれ５８．９ｌｍ／Ｗ、６１．１ｌｍ／Ｗであり、効率ロスの低減が可能となった。   Moreover, the sample which mixed the yellow fluorescent substance in the silicon resin about Ag coating absence and Ag coating presence was produced. The number of samples is 20 points each. The chromaticity coordinate average value (x, y) = (0.320, 0.326) without Ag coating and the total luminous flux average value 4.12 lm, while the chromaticity coordinate average value (x, y) = with Ag coating. (0.321, 0.327), the total luminous flux average value was 4.28 lm, and a total luminous flux increase of 3.9% was confirmed. Incidentally, the luminous efficiencies were 58.9 lm / W and 61.1 lm / W, respectively, and it was possible to reduce the efficiency loss.

本発明はＡｕやＣｕでワイヤーボンディングしている発光素子の出力ロスを抑制し、発光効率を高めた光源を提供できる。本発明の発光素子は、省エネルギーに貢献し、産業上の利用価値は極めて大きい。   INDUSTRIAL APPLICABILITY The present invention can provide a light source that suppresses output loss of a light emitting element that is wire-bonded with Au or Cu and has improved luminous efficiency. The light emitting device of the present invention contributes to energy saving and has an extremely high industrial utility value.

従来における表面実装型ＬＥＤの断面構造を模式的に示した図である。It is the figure which showed typically the cross-section of the conventional surface mount type LED. 本発明における表面実装型ＬＥＤの断面構造を模式的に示した図である。It is the figure which showed typically the cross-section of surface mount type LED in this invention. 本発明における蛍光体入りの表面実装型ＬＥＤの断面構造を模式的に示した図である。It is the figure which showed typically the cross-sectional structure of surface mount type LED containing the fluorescent substance in this invention.

符号の説明Explanation of symbols

１ Ａｕ線
２ 発光素子
３ 封止樹脂
４ 成型体
５ リード
６ ＡｇをコーティングしたＡｕ線
７ 蛍光体含有封止樹脂
DESCRIPTION OF SYMBOLS 1 Au wire 2 Light emitting element 3 Sealing resin 4 Molded body 5 Lead 6 Ag coated Au wire 7 Phosphor-containing sealing resin

Claims (7)

発光素子にワイヤーボンディングを有する発光装置において、ワイヤーボンディングのワイヤーに発光素子の発光波長に対して反射率を高める物質でコーティングされた金または銅を主成分とする金属細線を用いたことを特徴とする発光装置。   In a light emitting device having wire bonding in a light emitting element, the wire bonding wire uses a metal fine wire mainly composed of gold or copper coated with a substance that increases the reflectance with respect to the light emitting wavelength of the light emitting element. Light-emitting device. コーティング物質が、Ａｇ、Ａｌ、Ｒｈの少なくとも一種あるいはこれらの少なくとも一種を含む金属であることを特徴とする請求項１に記載の発光装置。   2. The light emitting device according to claim 1, wherein the coating substance is at least one of Ag, Al, and Rh or a metal containing at least one of these. 金属細線の太さが１０μｍ〜１０００μｍであることを特徴とする請求項１または２に記載の発光装置。   The light emitting device according to claim 1 or 2, wherein the thickness of the thin metal wire is 10 µm to 1000 µm. コーティングが電解メッキ法、無電解メッキ法、真空蒸着法、化学蒸着法(ＣＶＤ法)、スパッタ法、溶融法、プラズマスプレー法、超音波法、金属粉入り樹脂塗布法、還元法、イオンプレーティング法、のいずれかで形成されたものであることを特徴とする請求項１〜３のいずれかに記載の発光装置。   Coating is electrolytic plating method, electroless plating method, vacuum deposition method, chemical vapor deposition method (CVD method), sputtering method, melting method, plasma spray method, ultrasonic method, resin coating method with metal powder, reduction method, ion plating The light-emitting device according to claim 1, wherein the light-emitting device is formed by any of the above methods. コーティング層の厚さが１ｎｍ〜金属細線直径の１０％であることを特徴とする請求項１〜４のいずれかに記載の発光装置。   The light emitting device according to any one of claims 1 to 4, wherein the coating layer has a thickness of 1 nm to 10% of a metal fine wire diameter. 発光素子が載置されるリード面の一部または大部分がＡｇ、Ａｌ、Ｒｈの少なくとも一種あるいはこれらを含む金属でコーティングされている事を特徴とする請求項１〜５のいずれかに記載の発光装置。   6. A part or most of a lead surface on which a light emitting element is placed is coated with at least one of Ag, Al, and Rh or a metal containing them. Light emitting device. 請求項１〜６に記載の発光装置に発光素子の発光の一部あるいは全部を長波長光に変換する蛍光体を含むことを特徴とする発光装置。
The light emitting device according to claim 1, comprising a phosphor that converts part or all of the light emitted from the light emitting element into long wavelength light.
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