KR101296265B1 - Semiconductor light emitting device, semiconductor light emitting device package and methods for manufacturing the same - Google Patents

Abstract

PURPOSE: A semiconductor light emitting device, a semiconductor light emitting device package, and a method for manufacturing the same are provided to improve a surface scattering effect by forming nanowires. CONSTITUTION: A gallium nitride semiconductor stacked structure consists of an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. A p-type electrode (150) is connected to the p-type semiconductor layer and the n-type semiconductor layer. An n-type electrode (160) is connected to the p-type semiconductor layer and the n-type semiconductor layer. Nanowires (170) are formed on the semiconductor stacked structure, and the p-type electrode and the n-type electrode.

Description

Semiconductor light emitting device, semiconductor light emitting device package and method for manufacturing the same {Semiconductor light emitting device, semiconductor light emitting device package and methods for manufacturing the same}

The present invention relates to a gallium nitride-based semiconductor light emitting device, a semiconductor light emitting device package and a method for manufacturing the same, and more particularly, a semiconductor light emitting device, a semiconductor light emitting device package and a manufacturing method which can increase the light extraction efficiency of the semiconductor light emitting device It is about.

In general, gallium nitride (GaN) -based semiconductor light emitting diodes (LEDs) use gallium nitride-based materials having relatively high energy band gaps and are active in light emitting devices for generating short wavelength light such as green and blue light. It is adopted. As the gallium nitride-based semiconductor material, a material having an Al _x In _y Ga _(1-xy) N composition formula (where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, and 0 ≦ x + y ≦ 1) is widely used.

However, the conventional gallium nitride-based semiconductor light emitting device using the gallium nitride-based semiconductor material is generated in the active layer because the gallium nitride-based semiconductor material has a higher refractive index (n = 2.3 ~ 2.8) than the material surrounding the surrounding There is a problem in that the external extraction efficiency of the photon is reduced.

The above problem is described in detail. In order for the photon emitted from the active layer of the semiconductor light emitting diode to escape through the gallium nitride layer (n = 2.4) having a refractive index higher than that of air (n = 1), the nitride is The incident angle θ ₁ of the photons incident into the air from the gallium layer should be less than the critical angle θ _c = 23.6 °. For this reason, since the incident angle θ ₁ of the photons is greater than or equal to the critical angle θ _c , The photons are totally reflected at the interface between the gallium nitride layer and the air, and then disappear back to the inside of the device, thereby causing a problem in that light extraction efficiency is greatly reduced.

Therefore, in the related art, as a method for improving the light extraction efficiency of a semiconductor light emitting diode, a periodic pattern or an aperiodic roughness is formed on the upper surface of the gallium nitride layer to which light is emitted to enter the air from the gallium nitride layer. A method of reducing the incident angle of the photons below the critical angle allows the photons to penetrate into the air.

As described above, a technology related to a semiconductor light emitting device for improving light extraction efficiency of a semiconductor light emitting diode is disclosed in Korean Patent Application Laid-Open No. 10-2011-0130204, Korean Patent Publication No. 10-2005-0097076 and Korean Patent Publication No. 10-2010- It is already known in a number of patents, such as 0104769, the Korean Patent Publication No. 10-2010-0104769 discloses a technique for the III-V compound semiconductor light emitting device that the light emitted from the active layer is emitted to the outside through the light emitting layer As a method, forming a powder having a refractive index value and light transmittance between the light emitting layer and air, and using the powder as an etching mask to etch the light emitting layer to form a light emitting layer having a surface roughness have.

As described in Korean Patent Laid-Open No. 10-2006-0008049, a technique for forming an aperiodic roughness on the upper surface of the gallium nitride layer that emits light into the air increases the probability that photons can escape to the outside, This gives the advantage of increasing the external quantum efficiency characteristics. However, the process of imparting surface roughness by an etching process as described in Korean Patent Laid-Open No. 10-2006-0008049 has a disadvantage in that it is difficult to form a pattern having a nano size similar to the wavelength of light, and moreover, through dry etching. When the pattern is formed, there may be a problem that plasma damage occurs in the active layer of the multi-quantum well structure, and thus the luminance may be lowered.

Accordingly, there is a need in the art for a new method for improving the external quantum efficiency characteristics of light emitting devices by increasing the probability that photons can escape to the outside without the above problems.

An object of the present invention is to provide a semiconductor light emitting device, a semiconductor light emitting device package having a predetermined angle with respect to the surface of the semiconductor light emitting device, a semiconductor light emitting device package and a method of manufacturing the same.

The present invention also provides a semiconductor light emitting device, a semiconductor light emitting device package, and a method of manufacturing the same, in which a nanowire is formed on a surface of a bonding wire including a semiconductor light emitting device to apply an external current to the semiconductor light emitting device. There is this.

The present invention provides a gallium nitride based semiconductor stacked structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked; A p-type electrode and an n-type electrode connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively; And nanowires formed on surfaces of the gallium nitride based semiconductor stacked structure, the p-type electrode, and the n-type electrode.

The nanowires are grown with any one material selected from ZnO, TiO ₂ , Al ₂ O ₃ , Ga ₂ O ₃ and GaAs,

The nanowires are grown by any one method selected from chemical vapor deposition, co-precipitation, sol-gel, and hydrothermal synthesis.

The nanowires are grown to a diameter of 1 to 100 nm,

The nanowires are grown to a height of 10-100 nm,

The nanowires are grown at an angle to the surface.

In addition, the present invention is the semiconductor light emitting device of claim 1; Bonding wires connected to p-type electrodes and n-type electrodes of the semiconductor light emitting device; And a package body accommodating the semiconductor light emitting device, wherein the nanowires are formed on a surface of the bonding wire.

In addition, the present invention comprises the steps of forming a gallium nitride-based semiconductor laminated structure consisting of a stack of n-type semiconductor layer, active layer and p-type semiconductor layer; Forming a p-type electrode and an n-type electrode in contact with the p-type semiconductor layer and the n-type semiconductor layer of the gallium nitride based semiconductor stacked structure, respectively; And forming nanowires on surfaces of the gallium nitride based semiconductor stacked structure, the p-type electrode and the n-type electrode.

The nanowires are formed by growing nanomaterials by any one method selected from chemical vapor deposition, coprecipitation, sol-gel, and hydrothermal synthesis.

The nanowires are formed by hydrothermal synthesis using any one material selected from ZnO, TiO ₂ , Al ₂ O ₃ , Ga ₂ O ₃ and GaAs,

The nanowires are formed to have a diameter of 1 to 100㎛,

The nanowires are formed to have a height of 10 to 100㎛,

The nanowires are formed at a predetermined angle on the surface.

In addition, the present invention comprises the steps of forming a gallium nitride-based semiconductor laminated structure consisting of a stack of n-type semiconductor layer, active layer and p-type semiconductor layer; Forming a p-type electrode and an n-type electrode in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, of the semiconductor stacked structure; Disposing a semiconductor stacked structure in which the p-type electrode and the n-type electrode are formed on a package body; And forming a bonding wire connected to the p-type electrode and the n-type electrode. And forming nanowires on surfaces of the gallium nitride-based semiconductor stacked structure, the p-type electrode, the n-type electrode, and the bonding wire.

According to the present invention, by forming nanowires grown in a vertical direction by hydrothermal synthesis on the entire surface of a semiconductor light emitting device, the difference in refractive index of materials existing on a path through which light escapes due to the nanowires can be minimized. It is possible to increase the light emitted to the outside, and thus has the effect of improving the light extraction efficiency of the device.

In addition, the present invention provides a semiconductor light emitting device and a semiconductor light emitting device package in which nanowires are formed on surfaces of bonding wires respectively connected to p-type electrodes and n-type electrodes of the semiconductor light emitting device, thereby providing a surface scattering effect. In the bonding wire portion having the nanowires formed on the surface thereof, the light emitted from the outside of the light emitting device and directed toward the bonding wires is reflected or scattered by the nanowires, thereby suppressing the absorption of light. As a portion of the photons extracted to the outside is absorbed by the bonding wire, the light extraction efficiency may be reduced.

In addition, the present invention can be expected to have a high mass productivity due to the damage prevention effect of the nanowires by mounting the semiconductor light emitting device in the package and forming the nanowires by the hydrothermal synthesis method after the bonding wire process is finished, so , The yield of the device can be improved.

1 is a view for explaining a semiconductor light-emitting device formed with a nanowire according to the first embodiment of the present invention.
2 is a view showing a result of measuring the light extraction amount according to the density and the injection current of the nanowires formed in the semiconductor light emitting device according to Example 1 of the present invention.
3A to 3D are views for explaining a method for manufacturing a semiconductor light emitting device according to Embodiment 1 of the present invention.
4 is a view for explaining a semiconductor light emitting device package formed with a nanowire according to a second embodiment of the present invention.
5 is a photograph observing the resulting nanowires of the semiconductor light emitting device according to Example 1 of the present invention.
6A to 6C are views for explaining a method of manufacturing a semiconductor light emitting device package according to Embodiment 2 of the present invention.

Hereinafter, exemplary embodiments of a semiconductor light emitting device, a semiconductor light emitting device package, and a method of manufacturing the same will be described in detail with reference to the accompanying drawings.

The present invention provides a gallium nitride based semiconductor stacked structure in which an n type semiconductor layer, an active layer and a p type semiconductor layer are laminated, and a p connected to the p type semiconductor layer and the n type semiconductor layer of the gallium nitride based semiconductor stacked structure, respectively. Provided is a semiconductor light emitting device in which nanowires having predetermined angles are formed on front surfaces of a type electrode and an n-type electrode.

Here, the nanowires are made of any one material selected from ZnO, TiO ₂ , Al ₂ O ₃ , Ga ₂ O _3, and GaAs, and chemical vapor deposition or co-precipitation such as chemical vapor deposition (CVD). It may be formed by a solution synthesis method such as a coprecipitation method, a sol-gel method, and a hydrothermal method.

As such, the present invention forms a nanowire on the surface of the gallium nitride-based semiconductor layer constituting the semiconductor light emitting device by chemical vapor deposition or hydrothermal synthesis, preferably hydrothermal synthesis, so that the light escapes to the outside due to the nanowire. It is possible to minimize the difference in the refractive index of the materials present on the outgoing path to increase the light emitted to the outside, so that it is possible to more effectively extract the light emitted from the active layer of the semiconductor light emitting device.

The present invention also provides a semiconductor light emitting device in which a bonding wire and a package body are connected to a gallium nitride-based semiconductor stacked structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked, and a semiconductor light emitting device including a p-type electrode and an n-type electrode. The package provides a semiconductor light emitting device package in which nanowires having a predetermined angle with respect to surfaces of the semiconductor light emitting device and the bonding wire are formed.

As such, the present invention provides a semiconductor light emitting device package in which nanowires are formed on a surface of a bonding wire including all gallium nitride-based semiconductor layers formed in the semiconductor light emitting device, whereby a surface scattering effect is generated due to the nanowires. In the bonding wire portion in which the nanowires are formed on the surface thereof, the light emitted from the outside of the light emitting device and directed toward the bonding wires is reflected or scattered by the nanowires, thereby suppressing the absorption of light. As a part of the photons extracted to the outside is absorbed by the bonding wires, the light extraction efficiency may be reduced.

Nanowire is  Formed luminescence  device  And manufacturing method thereof

(Example 1)

1 is a view illustrating a semiconductor light emitting device in which nanowires are formed according to a first embodiment of the present invention. The semiconductor light emitting device according to the first embodiment of the present invention includes an n-type semiconductor layer 110 on a substrate 100. And a gallium nitride based semiconductor stacked structure in which the active layer 120 and the p-type semiconductor layer 130 are stacked, and the p-type electrode connected to the p-type semiconductor layer 130 and the n-type semiconductor layer 110, respectively. 150 and an n-type electrode 160 are formed, and nanowires 170 are formed on surfaces of the gallium nitride-based semiconductor stacked structure 100, the p-type electrodes 140 and 150, and the n-type electrode 160. Has a formed structure.

The substrate 100 is formed of a substrate suitable for growing a nitride semiconductor single crystal, preferably, using a transparent material including sapphire or zinc oxide (ZnO), gallium nitride (GaN), It may be formed using any one of silicon carbide (SiC) and aluminum nitride (AlN). On the other hand, as a layer for improving the lattice matching with the substrate formed of a material such as sapphire on the substrate, a buffer layer consisting of an AlN / GaN layer or a GaN layer can be generally formed, in the first embodiment of the present invention The buffer layer will be omitted.

The n-type semiconductor layer 110, the active layer 120, and the p-type semiconductor layer 130 may have an In _x Al _y Ga _{1 -x- y} N composition formula doped with each conductive dopant (where 0 _{≦ x ≦} 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). The n-type semiconductor layer 110 may be formed of a GaN layer or a GaN / AlGaN layer doped with n-type conductive impurities. For example, Si, Ge, Sn, or the like may be used as the n-type conductive impurities. And preferably Si is mainly used.

The active layer 120 may be formed of one quantum well layer, a double heterostructure, or a multi-quantum well layer composed of an InGaN / GaN layer.

The p-type semiconductor layer 130 may be formed of a GaN layer or a GaN / AlGaN layer doped with a p-type conductive impurity, and the p-type conductive impurity doping may include, for example, Mg, Zn, Be, or the like. It is used, Preferably Mg is mainly used. A portion of the p-type semiconductor layer and the active layer is removed by mesa etching to expose a portion of the n-type semiconductor layer on the bottom.

The p-type electrodes 140 and 150 are portions located above the semiconductor light emitting device, and the light emitted from the semiconductor light emitting devices is emitted. The p-type electrodes may be formed in a stacked structure of a transparent electrode and a bonding electrode. . Preferably, the transparent electrode 140 of the p-type electrode is preferably made of a mixture formed by adding one or more elements selected from the group consisting of Sn, Zn, Mg, Cu, Ag, and Al to indium oxide, and the addition The element is preferably added in an amount of 1 to 30% by weight based on the weight of the entire mixture. The bonding electrode 150 is an electrode for gold wire bonding, and may be additionally provided to increase electrical conductivity of the p-type electrode.

The nanowires 170 are formed by any one method selected from chemical vapor deposition, coprecipitation, sol-gel, and hydrothermal synthesis, and are selected from ZnO, TiO ₂ , Al ₂ O ₃ , Ga ₂ O _3, and GaAs. It consists of either substance. Preferably, the nanowires are formed by hydrothermal synthesis or chemical vapor deposition, and more preferably by the hydrothermal synthesis.

The nanowires 170 are formed to grow to a diameter of 1 to 100 nm and a height of 10 to 100 nm, and are formed on the gallium nitride based semiconductor stacked structure and the p-type electrode and the n-type electrode surface, and grow. Allow the face to grow at an angle to the surface.

In this case, the diameter and height of the nanowires may have various values according to embodiments, and minimize the difference in the refractive index of the materials present on the path through which light escapes due to the nanowires and is emitted from the active layer of the semiconductor light emitting device. Try to determine the light within the range that can be increased. Preferably, the nanowires may be formed with a diameter of 1 to 100 nm and a height of 10 to 100 nm. On the other hand, when the nanowires are formed under conditions outside the above range, sufficient light action for light extraction or light scattering (light reflection) does not occur.

Here, an important feature of the semiconductor light emitting device according to the first embodiment of the present invention is a gallium nitride-based semiconductor stacked structure consisting of a stack of the n-type semiconductor layer, the active layer and the p-type semiconductor layer, the p-type electrode and the n-type electrode Nanowires having a predetermined angle are formed on the surface of the substrate by hydrothermal synthesis.

As described above, the present invention is to grow the ZnO nanowires in the form of nano-structure synthesized in a liquid phase by using a hydrothermal synthesis method on the gallium nitride-based semiconductor stacked structure of the semiconductor light emitting device and the surface of the p-type electrode and the n-type electrode, Due to the nanowires, it is possible to minimize the difference in the refractive indexes of the materials existing on the path through which light escapes, thereby increasing the light emitted from the active layer of the semiconductor light emitting device.

Therefore, the present invention can effectively increase the light extraction efficiency due to the formation of the nanowires, and thus can expect a high efficiency, high output semiconductor light emitting device.

In general, when light generated in the multi-quantum well structure layer, which is an active layer of a semiconductor light emitting device, is emitted to the outside, total reflection occurs at the boundary between the device, external air, and sapphire substrate, and the like (air refractive index = 1) and sapphire substrate. Compared to (refractive index = 1.77), the gallium nitride-based semiconductor layer has a large refractive index value of about 2.4, so that the critical angle at which light generated in the active layer can escape to the outside of the device is very limited. The increase in the light extraction efficiency of the device is further reduced.

Accordingly, the present invention implements a nanowire shape on the surface of the semiconductor light emitting device, thereby reducing the total angle of light generated at the interface between the device and the air by lowering the incident angle of photons incident into the device and air below the critical angle, and is emitted to the outside Provided is a semiconductor light emitting device capable of increasing the amount of photons.

2 is a result of measuring the light extraction amount according to the density and the injection current of the semiconductor light-emitting device with a nanowire according to the first embodiment of the present invention. As shown in FIG. 2, when the nanowires are formed, the light extraction efficiency increases to a high current range, and as the density of the nanowires increases, the light extraction efficiency increases.

A method of manufacturing a semiconductor light emitting device according to Embodiment 1 of the present invention will be described with reference to FIGS. 3A to 3D.

First, as shown in FIG. 3A, after forming an n-type semiconductor layer 110, an active layer 120, and a p-type semiconductor layer 130 formed on the substrate 100, a gallium nitride based semiconductor laminate structure is formed. The transparent electrode 140 is formed as a p-type electrode on the p-type semiconductor layer 130 having the gallium nitride based semiconductor stacked structure.

Here, as a layer for improving lattice matching with a substrate formed of a sapphire-like material on the substrate 100, a buffer layer generally made of an AlN / GaN layer or a GaN layer may be further formed.

The substrate 100 is formed of a substrate suitable for growing a nitride semiconductor single crystal, and preferably, may be formed using a transparent material including sapphire, or any one selected from ZnO, GaN, SiC, and AlN.

The n-type semiconductor layer 110, the active layer 120, and the p-type semiconductor layer 130 may have an In _x Al _y Ga _{1 -x- y} N composition formula doped with each conductive dopant (where 0 _{≦ x ≦} 1, It can be formed from a semiconductor material having 0 ≦ y ≦ 1 and 0 ≦ x + y ≦ 1). The n-type semiconductor layer 110 may be formed of a GaN layer or a GaN / AlGaN layer doped with n-type conductive impurities. For example, Si, Ge, Sn, or the like may be used as the n-type conductive impurities. And preferably Si is mainly used.

The active layer 120 may be formed of one quantum well layer, a double heterostructure, or a multi-quantum well layer composed of an InGaN / GaN layer.

The p-type semiconductor layer 130 may be formed of a GaN layer or a GaN / AlGaN layer doped with a p-type conductive impurity, and the p-type conductive impurity doping may include, for example, Mg, Zn, Be, or the like. It is used, Preferably Mg is mainly used.

The transparent electrode 140 of the p-type electrode is formed of a mixture formed by adding one or more elements selected from the group consisting of Sn, Zn, Mg, Cu, Ag, and Al to indium oxide (In ₂ O ₃ ).

Next, as shown in FIG. 3B, portions of the transparent electrode 140, the p-type semiconductor layer 130, and the active layer 120 are etched to expose a portion of the n-type semiconductor layer.

Subsequently, as illustrated in FIG. 3C, the bonding electrode 150 is formed on the transparent electrode 140 by performing a deposition process and a patterning process on the substrate product on which the gallium nitride based semiconductor laminate structure is formed. A p-type electrode including the transparent electrode 130 and the bonding electrode 150 is formed, and an n-type electrode 160 is formed on the n-type semiconductor layer 110 exposed by the etching process. The bonding electrode 150 constituting the p-type electrode is a pad for electrical connection with a subsequent circuit board or lead frame. The n-type electrode 160 is a pad for electrical connection with a subsequent circuit board or lead frame, and is preferably formed using a metal such as Cr or Cu.

Then, as shown in FIG. 3d, the nanowire 170 is formed on the entire structure in which the p-type electrode and the n-type electrode are formed. Preferably, the nanowires 170 may include a surface portion of a semiconductor stacked structure formed by lamination of an n-type semiconductor layer 110, an active layer 120, and a p-type semiconductor layer 130, and the p-type electrodes 140 and 150 and n. It is formed to have a predetermined angle on the surface of the type electrode 160. The nanowires are formed to have a diameter of 1 to 100 nm and a height of 10 to 100 nm.

The diameter and height of the nanowires may have various values according to embodiments, and minimize the difference in refractive index of the materials present on the path through which the light exits due to the nanowires, and minimizes the difference of the light emitted from the active layer of the semiconductor light emitting device. It should be determined within the range where the critical angle can be increased. On the other hand, if the diameter and height of the nanowire is formed under the conditions outside the above range, sufficient light action for light extraction or light scattering does not occur.

The nanowires may be formed using a material capable of improving the light extraction efficiency of the device by reducing the difference in refractive index between the internal and external materials of the semiconductor light emitting device. In particular, ZnO, TiO ₂ , Al ₂ O ₃ , It is to be formed of any one material selected from Ga ₂ O ₃ and GaAs. The nanowires may be formed by any one method selected from chemical vapor deposition, coprecipitation, sol-gel, and hydrothermal synthesis, and preferably, hydrothermal synthesis or chemical vapor deposition. The manufacturing process is simple and excellent in reproducibility, and can be formed in a large area at a relatively low temperature, and also by the hydrothermal synthesis method which has the advantage of low manufacturing cost.

The method for forming nanowires using the hydrothermal synthesis method is as follows.

First, an aqueous solution containing 0.015 M zincnberatehexahydrate (Zn (NO ₃ ) ₂ .6H ₂ O, 0.015 M hexamethylene tetramine (HMTyl C ₆ H ₁₂ N ₄ ), and 0.05 to 0.3 wt% SDS (Sodium Dodecyl Sulfate) Using a teflon jig inside, the growth surface was immersed downward and heated by heating on a hot plate, where the heating temperature is preferably 89 to 91 ° C., and the time is 2 hours. It is preferable that it is time.

Subsequently, a washing process was performed using DI water to remove the residues, which was then dried in an oven at a temperature of 60 ° C. for 1 hour, and as a result, a nanowire made of ZnO was prepared.

As described above, the present invention forms nanowires on the surface of the semiconductor light emitting device through hydrothermal synthesis, so that the total internal reflection of light generated in the active layer of the nanowires due to the high refractive index difference between the semiconductor device and the air is generated. It serves to reduce the, thereby increasing the amount of light emitted to the outside, as a result, it can be expected to improve the external light extraction efficiency of the device.

Semiconductor light emitting device package and manufacturing method thereof

(Example 2)

In Embodiment 2 of the present invention, a semiconductor light emitting device package and a method of manufacturing the same will be described.

4 is a view for explaining a semiconductor light emitting device package to which the semiconductor light emitting device according to the first embodiment of the present invention is applied.

The semiconductor light emitting device package includes a package body 480 for accommodating the semiconductor light emitting device 401, and a bonding wire 480 for electrically connecting the semiconductor light emitting device 401 and the package body 480 to the semiconductor device. It includes a light emitting device and a nanowire 470 formed at a predetermined angle on the surface of the bonding wire. On the other hand, although not shown, in the package of the semiconductor light emitting device according to the present invention, a lead frame, a mirror or the like electrically connected to the semiconductor light emitting device may be further formed.

Here, the semiconductor light emitting device is a semiconductor light emitting device described in the first embodiment of the present invention, that is, a gallium nitride-based semiconductor stacked structure formed by laminating an n-type semiconductor layer, an active layer and a p-type semiconductor layer, the p-type semiconductor layer and A semiconductor light emitting device comprising a p-type electrode and an n-type electrode formed to be connected to an n-type semiconductor layer, and nanowires formed by hydrothermal synthesis on surfaces of the gallium nitride-based semiconductor stacked structure and the p-type electrode and the n-type electrode, respectively. Was used.

In addition, the nanowires 470 formed on the surface of the bonding wire 490 were manufactured by the same method as the method for manufacturing nanowires described in Embodiment 1 of the present invention.

The bonding wire 490 is preferably formed of a metal such as Au (gold), and the package body is attached to a lower surface of a substrate provided in the semiconductor light emitting device to receive and support the semiconductor light emitting device.

Here, an important feature of the semiconductor light emitting device package according to the second embodiment of the present invention is that the nanowires 470 having a predetermined angle with respect to the surface of the growth surface on the surface of the bonding wire, including the semiconductor light emitting device, Formed.

As described above, the present invention provides a gallium nitride-based semiconductor stacked structure formed by stacking an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, a p-type electrode and an n-type electrode, and a lower pattern on the surface of the bonding wire in a vertical direction. Due to the formation of the grown nanowires 470, the surface scattering effect is increased, and in the bonding wire portion in which the nanowires are formed on the surface, light emitted to the bonding wires by the nanowires is emitted by the nanowires. Since the absorption of light is suppressed by reflection or scattering, it is possible to solve a problem according to the prior art, that is, a part of photons extracted to the outside is absorbed into the bonding wire, thereby degrading light extraction efficiency.

5 is a photograph showing a semiconductor light emitting device on which nanowires are formed according to Example 2 of the present invention. (1) and (4) show that the nanowires are formed on the surface of the transparent electrode and the branch electrode forming the p-type electrode, and (2) the nanowires are formed on the surface of the gallium nitride n-type semiconductor layer. (3), it can be seen that nanowires are formed on the entire surface of the bonding wire.

6A to 6C illustrate a method of manufacturing a semiconductor light emitting device package according to Embodiment 2 of the present invention.

Referring to FIG. 6A, after forming an n-type semiconductor layer 410, an active layer 420, and a p-type semiconductor layer 430 on a substrate 400, a gallium nitride based semiconductor stacked structure is formed. P-type electrodes 440 and 450 and n-type electrodes 460 in contact with the p-type semiconductor layer 430 and the n-type semiconductor layer 410, respectively, are formed, thereby manufacturing gallium nitride-based semiconductor light emitting devices. Complete

Here, the gallium nitride-based semiconductor stacked structure consisting of a stack of the n-type semiconductor layer 410, the active layer 420 and the p-type semiconductor layer 430, the p-type electrodes 440, 450 and n-type electrode 460 is A gallium nitride based semiconductor stacked structure consisting of a stack of the n-type semiconductor layer 110, the active layer 120 and the p-type semiconductor layer 130 prepared in Example 1 of the invention, the p-type electrodes (140, 150) and n-type electrode It manufactured by the same method as the manufacturing method of (160).

Referring to FIG. 6B, a semiconductor light emitting device 401 manufactured by the manufacturing method is disposed on a package body 480, and bonding wires are formed on p-type electrodes 440 and 450 and n-type 460 of the semiconductor light emitting device, respectively. 490 is formed. The semiconductor light emitting device receives light from an external power source through the bonding wire 490 to generate light having a predetermined wavelength.

The bonding wire 490 is formed of a metal such as Au (gold), and the package body 480 is formed to be attached to the bottom surface of the substrate 400 provided in the semiconductor light emitting device 401.

Referring to FIG. 6C, nanowires 470 may be formed on surfaces of the package body 480 and the bonding wires 490 on which the semiconductor light emitting devices are disposed.

The nanowires 470 may be formed on a surface of the semiconductor light emitting device 401 and the bonding wire 490 in a shape grown in a predetermined angle, that is, in a vertical direction, and the diameter may be 1 to 100 nm. And forming height is set to 10-100 nm.

The nanowires 470 reduce the difference in refractive index between the internal and external materials of the semiconductor light emitting device, so that a material capable of improving light extraction efficiency of the device is used. In particular, ZnO, TiO ₂ , Al ₂ O ₃ , Ga ₂ O ₃ and GaAs to form a material of any one selected. In addition, the nanowires 470 may be formed by any one method selected from chemical vapor deposition, coprecipitation, sol-gel, and hydrothermal synthesis, and preferably, hydrothermal synthesis or chemical vapor deposition. Preferably, the manufacturing process is simple and excellent in reproducibility, it can be formed in a large area at a relatively low temperature, as well as by the hydrothermal synthesis method has the advantage of low manufacturing cost.

The method for forming nanowires using the hydrothermal synthesis method was performed in the same manner as in Example 1 of the present invention.

As described above, the present invention forms a nanowire having a predetermined angle with respect to the surface of the bonding wire, including a gallium nitride-based semiconductor stacked structure of the semiconductor light emitting device, and a p-type electrode and an n-type electrode, thereby surface scattering ) The effect is increased, and in the bonding wire portion having nanowires formed on the surface thereof, light emitted from outside the light emitting device and directed toward the bonding wires is reflected or scattered by the nanowires, thereby suppressing the absorption of light. The problem, that is, a portion of the photons extracted to the outside is absorbed by the bonding wires to solve the problem that the light extraction efficiency is lowered.

In addition, the present invention, after attaching the semiconductor light emitting element formed with the gallium nitride-based semiconductor stacked structure and the p-type electrode and n-type electrode to the package body, and the bonding wire for connecting the package body and the semiconductor light emitting element is formed, Since the process of forming the nanowires is performed, it is possible to prevent a problem that the nanowires may be lost in a subsequent process such as a dicing process or a cutting process of the semiconductor light emitting device.

That is, after the dicing process is performed on the semiconductor light emitting device on which the nanowires are formed, when the packaging process of the semiconductor light emitting device is performed, there may be a problem that the nanowires are damaged or lost during the dicing process.

However, in the present invention, after the dicing process is performed on the semiconductor light emitting device, the diced semiconductor light emitting device is attached to the package body, the bonding wire is formed, and then the nanowire forming process is performed, thereby damaging the nanowires. This can prevent the effective light extraction efficiency of the device, as well as increase the mass productivity of the device, so that the yield of the device can be expected to be improved.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but many variations and modifications may be made without departing from the spirit and scope of the invention. The scope of which is set forth in the appended claims.

100,400: substrate 110,410: n-type semiconductor layer
120,420: active layer 130,430: p-type semiconductor layer
140,440: transparent electrode forming a p-type electrode
150, 450: bonding electrode forming a p-type electrode
160,460: n-type electrode 170,470: nanowire
401: semiconductor light emitting element 480: package body
490: bonding wire

Claims (14)

a gallium nitride-based semiconductor stacked structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked;
A p-type electrode and an n-type electrode connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively; And
And a nanowire formed on the gallium nitride based semiconductor stacked structure, the p-type electrode, and the n-type electrode surface.
The method of claim 1,
The nanowire is a semiconductor light emitting device grown with any one material selected from ZnO, TiO ₂ , Al ₂ O ₃ , Ga ₂ O ₃ and GaAs.
The method of claim 1,
The nanowires are grown by any one method selected from chemical vapor deposition, co-precipitation, sol-gel method and hydrothermal synthesis method.
The method of claim 1,
The nanowire is a semiconductor light emitting device grown to a diameter of 1 ~ 100nm.
The method of claim 1,
The nanowire is a semiconductor light emitting device grown to a height of 10 ~ 100nm.
The method of claim 1,
The nanowires are grown with a predetermined angle with respect to the surface.
The semiconductor light emitting device according to any one of claims 1 to 6;
Bonding wires connected to p-type electrodes and n-type electrodes of the semiconductor light emitting device; And
And a package body accommodating the semiconductor light emitting device.
The semiconductor light emitting device package, characterized in that the nanowire is formed on the surface of the bonding wire.
forming a gallium nitride based semiconductor laminate structure consisting of a stack of an n-type semiconductor layer, an active layer and a p-type semiconductor layer;
Forming a p-type electrode and an n-type electrode in contact with the p-type semiconductor layer and the n-type semiconductor layer of the gallium nitride based semiconductor stacked structure, respectively; And
And forming nanowires on the gallium nitride based semiconductor stacked structure, the p-type electrode and the n-type electrode surface.
The method of claim 8,
The nanowires are formed by growing a nanomaterial by any one method selected from chemical vapor deposition, coprecipitation, sol-gel, and hydrothermal synthesis.
The method of claim 8,
The nanowires are formed by a hydrothermal synthesis method using any one material selected from ZnO, TiO ₂ , Al ₂ O ₃ , Ga ₂ O ₃ and GaAs.
The method of claim 8,
The nanowires are formed to have a diameter of 1 ~ 100㎛ semiconductor manufacturing device.
The method of claim 8,
The nanowires are formed to have a height of 10 ~ 100㎛ semiconductor manufacturing device.
The method of claim 8,
The nanowires are formed on the surface having a predetermined angle forming a semiconductor light emitting device.
forming a gallium nitride based semiconductor laminate structure consisting of a stack of an n-type semiconductor layer, an active layer and a p-type semiconductor layer;
Forming a p-type electrode and an n-type electrode in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, of the semiconductor stacked structure;
Disposing a semiconductor stacked structure in which the p-type electrode and the n-type electrode are formed on a package body; And
Forming a bonding wire connected to the p-type electrode and the n-type electrode; And
And forming nanowires on surfaces of the gallium nitride-based semiconductor stacked structure, the p-type electrode, the n-type electrode, and the bonding wire.

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