KR20100113876A - Preparing methods of light emitting diode comprising zno nanostructures - Google Patents
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Abstract
The present invention relates to a method of manufacturing a light emitting diode comprising a zinc oxide nanostructure.
The wet method according to the present invention can form a zinc oxide nanostructure on the light emitting diode p-electrode even at a low temperature of 200 ° C. or lower, and damage to the electrode layer due to heat generated when the nanostructure is formed by conventional chemical vapor deposition. I never do that. In addition, the present invention has an advantage that can easily control the diameter and length of the nanostructure, it can be usefully used in the field of light emitting diodes.
Description
The present invention relates to a method of manufacturing a light emitting diode including a zinc oxide nanostructure, and relates to an invention that can increase light extraction efficiency by forming a zinc oxide nanostructure on the light emitting diode at a low temperature.
In order to use a light emitting diode as a light source for high efficiency, it is very important to develop the maximum internal quantum efficiency, high transparency ohmic electrode and light extraction enhancement technology. Currently, much research has been made on improving external quantum efficiency by improving light extraction efficiency rather than improving external quantum efficiency through internal quantum efficiency.
In order to improve light extraction efficiency, many researches and developments are being made, such as changing the light emitting diode surface structure. The most representative methods are surface roughness technology, patterned sapphire substrate patterning technology, and photonic crystal structure technology.
Recently, research on improving light extraction efficiency through zinc oxide nanorod arrays has attracted attention. Currently, the synthesis technology of zinc oxide nanorods for improving light extraction efficiency is mainly achieved through chemical vapor deposition (CVD). Recently, research results have been reported to improve light extraction efficiency by aligning one-dimensional nanostructures, such as nanorods manufactured by CVD, on top of a light emitting diode, but since the CVD process itself is performed at a high temperature of at least 300 ° C This causes a thermal damage to the p-electrode portion of the light emitting diode, which leads to an increase in driving voltage.
Therefore, in the arrangement of zinc oxide nanorods, there is a demand for a technique in which zinc oxide nanostructures can be arranged at a low temperature, the shape of the nanostructures can be easily controlled, and the equipment for forming the structures is not limited. .
The present invention is to solve the above problems, to provide a nanostructure manufacturing method that is easy to control the arrangement and shape of the nanostructures while forming a zinc oxide nanostructure on the p-electrode of the light emitting diode at low temperature conditions. .
In order to achieve the above object, the present invention has at least one n-electrode in the n-type semiconductor layer stacked on the substrate, at least one p-electrode in the p-type semiconductor layer, n-type semiconductor layer and p-type A method of manufacturing a light emitting diode having an active layer between semiconductor layers, the method comprising: 1) applying a photoresist on top of a light emitting diode and introducing a photolithography process to expose only the p-electrode; 2) immersing the light emitting diode exposed to the p-electrode of step 1) in a zinc precursor solution, taking out the immersed light emitting diode and applying heat to form a zinc oxide seed on the light emitting diode; And 3) immersing a light emitting diode in which a zinc oxide seed is formed on the p-electrode of step 2) in a mixture of zinc precursor and a surfactant, and applying heat to form a zinc oxide nanostructure on the light emitting diode. Provided is a method of manufacturing a light emitting diode.
In addition, step 3) requires an additional step for removing the photoresist, ungrown zinc oxide crystals used in step 1) from the light emitting diode. Preferably, the light emitting diode on which the zinc oxide nanostructures are formed may be immersed in an organic solvent, treated with ultrasonic waves, and then dried. At this time, the organic solvent may be used acetone, C 1 ~ C 3 alcohol, ammonia or a mixture thereof.
The p-electrode is a portion positioned above the light emitting diode, and is a portion where light generated from the light emitting diode is emitted. The p-electrode may be a transparent electrode and has an electrical conductivity. Preferred p-electrodes are indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), gallium zinc oxide (GZO), aluminum zinc oxide (AZO) and the like.
In order to increase the electrical conductivity of the p-electrode, a bonding electrode may be further formed. The bonding electrode is an electrode for gold wire bonding, and may be additionally provided to increase electrical conductivity of the p-electrode.
In addition, the zinc precursor of steps 2) and 3) may be used zinc acetate, zinc nitrate, zinc sulfate, zinc chloride and the like. The zinc precursor may be prepared in distilled water, C 1 to C 3 alcohol, ammonia or a mixture thereof at a concentration of 0.0001 to 10 mol, and heated to 25 to 200 ° C. to prepare a zinc precursor solution. The light emitting diode immersed in the zinc precursor solution of step 2) may be heated at 25 ° C. to 200 ° C. for 10 to 600 minutes, and a method of applying heat may be performed by conventional methods in the art. Preferably, the light emitting diodes immersed in the zinc precursor solution may be put in a dryer, and heat may be applied by selecting the appropriate temperature and time.
In addition, the surfactant of step 3) may be used hexamethylenetetramine, urea, ammonia, etc., the zinc precursor and the surfactant is added to distilled water, C 1 ~ C 3 alcohol, ammonia or a mixture thereof, respectively 0.0001 ~ A zinc precursor and a surfactant mixture can be prepared at a 10 molar concentration. Heat may be applied to the light emitting diodes immersed in the mixed solution of step 3) at 25 ° C. to 200 ° C. for 10 to 600 minutes, and a method of applying heat may be performed by conventional methods in the art. Preferably, the light emitting diode immersed in the mixed solution may be put in a dryer, and heat may be applied by selecting the appropriate temperature and time.
The zinc oxide nanostructures formed on the p-electrode according to the present invention may be prepared nanowires, nanorods, nanowalls, nanoballs, nanotubes, etc., preferably nanowires, nanorods, and the like. . In this case, growth of the zinc oxide nanostructures may be controlled to have a vertical, oriented or random texturing structure, and the zinc oxide nanostructures may have a diameter and a length of 5 nm to 50 μm.
In addition, the present invention provides a light emitting diode manufactured according to the manufacturing method of the present invention. The light emitting diode of the present invention may have a light emission wavelength in the range of 200 to 1000 nm.
In the wet method according to the present invention, zinc oxide nanostructures can be formed on the light emitting diode p-electrode even at a low temperature of 200 ° C. or lower, and electrode layer damage due to heat generated during the formation of nanostructures by conventional chemical vapor deposition Does not occur. In addition, the present invention has an advantage that can easily control the diameter and length of the nanostructure, it can be usefully used in the field of light emitting diodes.
A light emitting diode is a type of p-n junction diode, and is a semiconductor device using a full-field light emitting effect, a phenomenon in which short wavelength light is emitted when a voltage is applied in a forward direction. That is, when the forward voltage is applied, the electrons of the n-type semiconductor layer and the holes of the p-type semiconductor layer combine to emit energy corresponding to the energy gap of the conduction band and the valence band. Energy is mainly emitted in the form of heat or light, and when emitted in the form of light, it becomes a light emitting diode.
The light emitting diode is used as a light source for high efficiency lighting, and the light emitting diode has a multilayer structure. The semiconductor material for manufacturing the light emitting diode may be manufactured using an organic semiconductor material in addition to inorganic semiconductor materials such as gallium nitride, silicon, and other compound semiconductors of arsenic gallium.
Various methods have been applied to improve light extraction efficiency in light emitting diodes. As a typical method, a method of generating zinc oxide structures on top of a light emitting diode using chemical vapor deposition has been studied. However, since the chemical vapor deposition is performed at a high temperature of at least 300 ° C., the n-electrode and p-electrode portions of the light emitting diode are thermally induced. There is a disadvantage that the driving voltage increases due to damage. While overcoming the above disadvantages, a method of stacking an oxide nanostructure on the p-electrode in order to increase light extraction efficiency of the light emitting diode is most preferred. The p-electrode may use any material used in the art without limitation, and the p-electrode may be stacked to be transparent. Materials that may be used as the p-electrode may include indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), gallium zinc oxide (GZO), aluminum zinc oxide (AZO), and the like.
The present invention is to laminate a zinc oxide nanostructure on the light emitting diode at a low temperature, it can be carried out using a wet method. Preferred wet methods include the sol-gel method and the micro bubble method. The sol-gel method and the micro bubble method can be introduced and used without limitation as long as it can be used in the art.
First, step 1) is a step of introducing a photolithography process to expose only the p-electrode on the light emitting diode.
In the wet method, an n-type semiconductor layer, a p-type semiconductor layer, and a bonding metal may be exposed on the upper surface of the light emitting diode. The present invention requires exposing only the p-electrode to form a zinc oxide nanostructure on the p-electrode of the light emitting diode. The method of exposing only the p-electrode may be easily exposed through a photolithography process, which is a conventional method in the art. Preferably, the upper part of the light emitting diode is coated with a photosensitive agent reacting to the light source, As a result, only the p-electrode may be exposed through a positive lithography or a negative lithography process.
The photosensitizer generally refers to an organic or inorganic composition in which physical and chemical changes occur under the action of light and radiation energy, or a composition system in which an image is formed by light irradiation. The photosensitizer may be used a conventional material used in the semiconductor industry, or can be purchased and used. In particular, the photosensitizer is most preferably used to react with ultraviolet light.
Next, step 2) is to form a zinc oxide seed on the p-electrode of the light emitting diode of step 1).
In order to form a zinc oxide seed on the p-electrode, the zinc oxide seed may be formed through an immersion process or a spin coating method which is conventional in the art. Preferably, the zinc precursor is dissolved in a solution, and the light emitting diode is immersed therein for a predetermined time to form a zinc oxide seed. As a preferable zinc precursor, zinc acetate, zinc nitrate, zinc sulfate, zinc chloride, etc. can be used individually or in mixture of 2 or more types.
In the present invention, the zinc oxide seed refers to a zinc oxide crystal in which a zinc precursor has a crystal structure on the p-electrode and is bonded on the p-electrode. In this case, the method of forming the zinc oxide seed using the zinc precursor may be performed by evaporating the zinc oxide powder to deposit on the p-electrode, or by applying the zinc oxide powder directly to the p-electrode. Preferably, the zinc precursor may be dissolved in distilled water, C 1 to C 3 alcohol, ammonia or a mixture thereof, and the zinc oxide seed may be formed by immersing the light emitting diode in a predetermined time. In this case, the zinc precursor is prepared by adding 0.0001-10 mol to distilled water, C 1 -C 3 alcohol, ammonia or 1 L of these mixtures, and heating the zinc precursor solution to 25-200 ° C. to ionize the zinc precursor solution. And can be activated. The method of applying heat to the zinc precursor solution is possible in a conventional manner, it can be applied under a constant pressure depending on the temperature conditions.
In the preparation of the zinc precursor solution, when the heating temperature is less than 25 ° C., the zinc precursor is not sufficiently dissolved and the zinc precursor has low ionization rate, so that zinc oxide seeds are hardly formed, and when it exceeds 200 ° C., in order to immerse the light emitting diode. It is not efficient because the solution temperature must be lowered. Furthermore, when the light emitting diode having the photosensitive agent remaining in the solution is immersed in a solution exceeding 200 ° C., the photosensitive agent is denatured on the top of the light emitting diode, and thus there is a disadvantage in that it is difficult to remove thereafter.
Subsequently, the time for immersing the light emitting diode in the zinc precursor solution may be selected in consideration of the concentration and temperature of the zinc precursor solution, the time for immersing the light emitting diode in the zinc precursor solution, preferably 5 to 60 minutes in the zinc precursor solution Can be immersed.
Next, after the zinc oxide seed is formed on the p-electrode through the above steps, the growth of the nanostructures may be induced through the formed zinc oxide seed. Therefore, it is necessary to apply heat to the light emitting diode so that the zinc oxide seed can be fixed to the light emitting diode. The method of applying heat of the immersed light emitting diode is not particularly limited, and heat is preferably applied using a dryer. At this time, it is preferable to make heat into 25-200 degreeC, and to apply heat. When the temperature to apply the heat is less than 25 ℃, it is not easy to fix the zinc oxide crystals to the light emitting diode, and if the heating temperature exceeds 200 ℃, it is easy to fix the zinc oxide crystals, but the light emitting diode n-electrode And disadvantages that can cause damage to the p-electrode. In addition, due to the denaturation of the photoresist remaining in the light emitting diode, there is a disadvantage that it is difficult to remove later.
Finally, step 3) is a step of forming a zinc oxide nanostructure using a light emitting diode on which a zinc oxide seed is formed.
The surfactant used in the step 3) is to serve as a catalyst for the rapid formation of the zinc oxide nanostructure, to continuously supply OH - ions and the like. Preferably, hexamethylenetetramine, urea, ammonia, or the like may be used.
In order to grow a zinc oxide seed formed on the light emitting diode p-electrode into a zinc oxide nanostructure, a zinc precursor and a surfactant mixture may be prepared and used. The zinc precursor and the surfactant mixture may be prepared by dissolving in distilled water, C 1 ~ C 3 alcohol, ammonia or a mixture thereof. At this time, the addition amount of the zinc precursor and the surfactant is not limited as long as it is a preferable ratio capable of forming the zinc oxide nanostructure in the zinc oxide seed, more preferably the zinc precursor and the surfactant is the distilled water, C 1 ~ C 3 alcohol, It can be prepared by adding 0.0001 to 10 mol of ammonia or 1 L of these mixtures, respectively.
Heat may be added to ionize and activate the zinc precursor and surfactant mixture, and preferably heated to 25 to 200 ° C. to ionize and activate the zinc precursor and surfactant mixture. The method of applying heat to the mixture of zinc precursor and surfactant may be applied under a constant pressure, if possible, according to a conventional method.
When the heating temperature of the mixed solution is less than 25 ℃, not only the zinc precursor and the surfactant is not sufficiently dissolved, but also not ionized and activated, it is difficult to induce zinc oxide nanostructure formation smoothly. When the temperature of the mixed liquid exceeds 200 ° C., the mixed liquid is ionized and activated, but in order to immerse the light emitting diode in which the zinc oxide seed is formed, there is a need to lower the temperature of the mixed liquid. Furthermore, if the light-emitting diode with the photosensitizer remaining is immersed in the mixed solution exceeding 200 ℃, the photoresist is modified on the light-emitting diode, there is a disadvantage that it is difficult to remove later.
In order to immerse the light emitting diode in the mixed solution prepared in step 3), so that the zinc oxide seed formed on the light emitting diode is formed of a zinc oxide nanostructure, it is carried out while maintaining the temperature of the mixed solution at 25 ~ 200 ℃. The temperature range is the most preferable temperature range for the zinc oxide seed to be formed into a zinc oxide nanostructure. The time for forming the zinc oxide nanostructures in the light emitting diode may be varied by the concentration and temperature of the mixed solution. Preferably it may be performed for 10 to 600 minutes.
Zinc oxide nanostructures refer to nanomaterials of all shapes having diameters and lengths of 5 nm to 50 μm. Preferably the nanostructures are nanowires, nanorods, nanowalls, nanoballs, nanotubes and the like, more preferably nanowires, nanorods and the like.
The nanowires refer to nanowire-shaped nanomaterials having a diameter and a length of 5 nm to 50 μm. In addition, the nanorods refer to a rod-shaped nanomaterial having an inside filling having a diameter and a length of 5 nm to 50 μm.
The growth direction of the nanostructure on the light emitting diode p-electrode may be adjusted in any direction, and may be preferably grown to have a vertical, orientation, random texturing structure, and the like.
The oriented structure refers to a form in which the nanostructures are grown in a predetermined direction, not vertical, and the random texturing structure refers to a form in which the growth direction is grown in a random direction, not in a constant direction.
The nanostructures produced by the manufacturing method are characterized in that they are formed only on the light emitting diode p-electrode, and the nanostructures are not limited so long as they can extract light emitted through the p-electrode more effectively. . In addition, the growth direction of the nanostructure is not limited to the growth direction as long as the light extraction efficiency is the best direction. The diameter and length of the grown nanostructures are not limited as long as they have the best light extraction efficiency.
The present invention may further include removing impurities other than the zinc oxide nanostructures formed on the light emitting diodes.
In order to form a zinc oxide nanostructure on the p-electrode of the light emitting diode in the present invention, the light emitting diode was applied as a photosensitive agent in step 1). The photosensitizer was used as a mask to selectively produce zinc oxide nanostructures only on the light emitting diode p-electrode. Therefore, in this step, it is necessary to remove the photosensitizer and ungrown zinc oxide residue (hereinafter collectively referred to as impurities).
The method of removing the impurity is not limited as long as it is a conventional method in the art. Preferably, the light emitting diode in which the zinc oxide nanostructure of step 3) is formed is an organic solvent, for example acetone, C 1 -C 3 alcohol, ammonia or It can be immersed and removed in these mixed liquids. In order to facilitate the removal of impurities present in the light emitting diode, the light emitting diode may be performed by applying ultrasonic waves in a state of being immersed in an organic solvent.
In addition, the present invention provides a light emitting diode manufactured according to the manufacturing method of the present invention. The light emitting diode of the present invention forms a zinc oxide nanostructure on the light emitting diode p-electrode to increase light extraction efficiency, and the light emitting diode may have a light emission wavelength in a range of 200 to 1000 nm. The wavelength range is a wavelength range including all ultraviolet rays, infrared rays, visible light, and the like.
Examples of a method of manufacturing a light emitting diode having a photonic crystal structure according to the present invention can be variously applied, and hereinafter, preferred embodiments will be described with reference to the accompanying drawings.
1 is a schematic diagram showing the steps for forming a light emitting diode zinc oxide seed by wet chemical synthesis. In detail, it can be seen that the
In addition, Figure 2 is a schematic diagram showing the step of forming a zinc oxide nanostructure from the zinc oxide seed formed on the light emitting diode p-electrode by the wet chemical synthesis method. In detail, the
3 is a view illustrating a process of manufacturing a zinc oxide nanostructure on the light emitting diode 10 p-
4 is an electron micrograph of the zinc oxide nanostructures formed on the upper surface of the light emitting diodes. Specifically, (a) shows the positions of bonding metal (= B-metal), p-electrode, n-electrode (= n-metal), etc. to increase the electrical conductivity of the upper surface of the light emitting diode, and (b) It can be seen that the zinc oxide nanostructure is formed only on the p-electrode, and (c) and (d) shows it in detail. The grown nanostructures, in particular nanorods, have an average diameter of 100 nm and an average length of 1 μm. In addition, it can be seen that it has a "random texturing structure" which is a structure advantageous for light extraction.
When light generated from the multi-quantum well, which is an active layer of the light emitting diode, is emitted, total reflection occurs at the boundary between the device and the outside air, an external encapsulant epoxy, and a sapphire substrate. Compared to air (refractive index = 1), epoxy (refractive index = 1.5), and sapphire (refractive index = 1.77), gallium nitride has a refractive index value of about 2.5, so that light generated from a multi-quantum well can escape to the outside of the device. The critical angle that can be is a very limited area.
Therefore, light incident outside the critical angle continues to totally reflect until it is absorbed inside the device, leading to heat generation of the device, and the light extraction efficiency is very low at only a few%. In order to overcome the limitations of the light emitting diodes, research is being conducted to effectively reduce total reflection by patterning the light emitting diode surface and the sapphire substrate. When patterning the light emitting diode surface and the sapphire substrate, it is possible to change the reflection path of the totally reflected light or to correct the incident angle of the light due to the diffuse reflection phenomenon caused by the random texturing structure having an uneven surface shape. The emission efficiency of light can be improved.
5 is a result of measuring the electroluminescence according to the forward voltage applied to the conventional light emitting diode and the light emitting diode formed with the zinc oxide nanostructures prepared according to the present invention. Compared to the conventional general light emitting diode, the light emitting diode according to the present invention was found to increase the electric field emission efficiency by about 16 to 21% in the current range of 20 to 100 mA.
6 is a result of measuring the light extraction amount according to the density and the injection current of the zinc oxide nanorods. The light extraction efficiency increased by more than 30% to the high current range, and the light extraction efficiency increased to 45% as the density of zinc oxide nanostructures increased.
In addition, Figure 7 is a result of measuring the voltage change according to the current when the zinc oxide nanostructures are grown on the light emitting diode surface. Since the low temperature growth method is applied, it can be seen that there is no deterioration or damage of the electrical characteristics of the light emitting diodes. Low temperature wet chemistry means no damage to the p-electrode, which is an lm / W that represents the efficiency of an actual light emitting diode, as it improves light output without changing the value of V f (forward voltage). The light output improvement can be reflected in the value as it is. Therefore, the optimal light extraction structure capable of improving the light output without affecting V f and without affecting the electrode is considered to be a zinc oxide nanostructure using low temperature wet chemical synthesis.
Hereinafter, the present invention will be described in more detail with reference to preferred embodiments.
However, the following examples are illustrative of the present invention, and the contents of the present invention are not limited by the following examples.
<Example 1> Preparation of a transparent electrode ZnO nanostructures on
Zinc acetate powder was diluted to 0.91 g in 1 L of distilled water, and heated to about 90 ° C. or higher for easy ionization and activation. The light emitting diode was placed in the acetic acid solution, held for 5 minutes to form a zinc seed, and the light emitting diode was taken out and heat treated at 90 ° C. in a dryer.
Next, dilute zinc nitrate powder to 7.43 g in 1 liter of distilled water, dilute the hexamethylenetetramine powder as a surfactant to 3.50 g in a solution containing zinc nitrate, and the zinc nitrate and hexamethylenetetramine. The mixture was heated to about 90 ° C. or higher to facilitate ionization and activation. The light emitting diode on which the zinc oxide seed was formed was immersed in a mixture of zinc nitrate and hexamethylenetetramine. In order to form zinc oxide nanowires or nanorods, the light emitting diodes were maintained in a 90 ° C. mixture for 5 minutes.
In order to remove the photosensitizer and ungrown zinc oxide residue from the light emitting diode, the light emitting diode was immersed in ethanol solution and sonicated. This was dried to prepare a light emitting diode in which a zinc oxide nanostructure was formed.
<
Example
2>
Transparent electrode layer
Preparation of zinc oxide nanostructures on
A light emitting diode in which a zinc oxide nanostructure was formed in the same manner as in Example 1 except that the light emitting diode was immersed in a 90 ° C. mixed solution for 30 minutes to form nanowires or nanorods in the light emitting diode having the zinc oxide seed formed thereon. Was prepared.
< Comparative example 1> Manufacture of General Light Emitting Diode
In the case of the general light emitting diode to be compared with respect to the light emitting diode of the present invention, a light emitting diode having the same structure as the light emitting diode of the present invention was used except that no zinc oxide nanostructure was formed on the p-electrode.
< Experimental Example 1> Evaluation of light emitting diode extraction efficiency
Example 1 was placed on a current-voltage analyzer to measure electroluminescence of the light emitting diodes, and was measured by placing an optical meter on the light emitting diodes to measure the emitted light. The optical measuring device is composed of an optical fiber in which an objective lens is inserted, and an electroluminescence measurement result of the light emitting diode can be obtained through a spectrum measuring device. The light extraction efficiency of the light emitting diode was measured at an angle of 30 ° in the vertical direction. The results are shown in Figures 5-7.
As shown in FIG. 5, compared to Comparative Example 1, Example 2 showed an increase in electric field emission efficiency of about 16 to 21% in the current range of 20 to 100 mA.
As shown in FIG. 6, the light emitting diode of Example 1 increased light extraction efficiency by 30% or more up to a high current range, and the light extraction efficiency increased to 45% level in Example 2 having a high density of zinc oxide nanostructures. Appeared.
As shown in FIG. 7, in Example 1 to which the low temperature growth method is applied, there is no deterioration or damage of the electrical characteristics of the light emitting diode. Low temperature wet chemistry does not damage the p-electrode, which means that the light output is improved without changing the V f (forward voltage) value. The output improvement can be reflected as it is. Therefore, it was found that the optimal light extraction structure capable of improving the light output without affecting the V f and without affecting the electrode is a zinc oxide nano structure using the nanostructure manufacturing method according to the present invention.
1 is a schematic diagram showing the steps for forming a light emitting diode zinc oxide seed by wet chemical synthesis.
FIG. 2 is a schematic diagram showing a step of forming a zinc oxide nanostructure from a zinc oxide seed formed on a light emitting diode p-electrode by a wet chemical synthesis method.
3 is a view showing a process of manufacturing a zinc oxide nanostructure on the light emitting diode p-electrode.
4 is an electron micrograph of the zinc oxide nanostructures formed on the upper surface of the light emitting diodes.
5 is a measurement result of electroluminescence according to the application of the forward voltage to the conventional light emitting diode and the light emitting diode according to the present invention.
6 is a result of measuring the light extraction amount according to the density and the injection current of the zinc oxide nanostructures.
7 is a result of measuring the voltage change according to the current when the zinc oxide nanostructures are grown on the light emitting diode surface.
Explanation of symbols on the main parts of the drawings
1.
10.
12. undoped-
14.
16.p-electrode (transparent electrode) 17.bonding metal
18.n-electrode 19.photosensitive agent
31. Zinc precursor and
40.
※ n-metal: n-electrode
※ b-matal: bonding metal
※ C-LED: Conventional light emitting diode
Claims (16)
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101296265B1 (en) * | 2012-06-12 | 2013-08-14 | 순천대학교 산학협력단 | Semiconductor light emitting device, semiconductor light emitting device package and methods for manufacturing the same |
| KR101379772B1 (en) * | 2012-10-29 | 2014-04-01 | 재단법인대구경북과학기술원 | Manufacturing method for simonkolleite and thereby made simonkolleite |
| KR20140133662A (en) * | 2013-05-09 | 2014-11-20 | 포항공과대학교 산학협력단 | Light-emitting device comprising transparent electrode and method for fabricating the same |
| KR20160013554A (en) * | 2014-07-28 | 2016-02-05 | 엘지이노텍 주식회사 | Light emitting device and lighting system |
-
2009
- 2009-04-14 KR KR1020090032415A patent/KR20100113876A/en not_active Application Discontinuation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101296265B1 (en) * | 2012-06-12 | 2013-08-14 | 순천대학교 산학협력단 | Semiconductor light emitting device, semiconductor light emitting device package and methods for manufacturing the same |
| KR101379772B1 (en) * | 2012-10-29 | 2014-04-01 | 재단법인대구경북과학기술원 | Manufacturing method for simonkolleite and thereby made simonkolleite |
| KR20140133662A (en) * | 2013-05-09 | 2014-11-20 | 포항공과대학교 산학협력단 | Light-emitting device comprising transparent electrode and method for fabricating the same |
| KR20160013554A (en) * | 2014-07-28 | 2016-02-05 | 엘지이노텍 주식회사 | Light emitting device and lighting system |
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