JPH0766235A - Composite bonding wire for semiconductor element and semiconductor device - Google Patents
Composite bonding wire for semiconductor element and semiconductor deviceInfo
- Publication number
- JPH0766235A JPH0766235A JP5212799A JP21279993A JPH0766235A JP H0766235 A JPH0766235 A JP H0766235A JP 5212799 A JP5212799 A JP 5212799A JP 21279993 A JP21279993 A JP 21279993A JP H0766235 A JPH0766235 A JP H0766235A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding wire
- semiconductor device
- bonding
- core wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/4382—Applying permanent coating, e.g. in-situ coating
- H01L2224/43825—Plating, e.g. electroplating, electroless plating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/4519—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45644—Gold (Au) as principal constituent
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Wire Bonding (AREA)
- Chemically Coating (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体素子用複合ボンデ
ィングワイヤ、詳しくは、半導体装置の製造において半
導体チップの電極と外部リードとを電気的に接続する際
に用いるボンディングワイヤに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite bonding wire for a semiconductor element, and more particularly to a bonding wire used for electrically connecting an electrode of a semiconductor chip and an external lead in the manufacture of a semiconductor device.
【０００２】[0002]
【従来の技術とその問題点】半導体装置の製造における
組立工程では、所定の集積回路を形成した半導体チップ
上の多数の電極と、各電極に対応して多数設けられ実装
時に接続端子として機能する外部リードとを接続する方
法として、両者の間に導電性の金属ワイヤをループ状に
張設するワイヤボンディング技術が一般に採用されてい
る。2. Description of the Related Art In an assembly process in manufacturing a semiconductor device, a large number of electrodes on a semiconductor chip on which a predetermined integrated circuit is formed and a large number of electrodes provided corresponding to the respective electrodes function as connection terminals during mounting. As a method for connecting the external lead, a wire bonding technique in which a conductive metal wire is stretched in a loop shape between the two is generally adopted.
【０００３】一方、近年における半導体集積回路への一
層の高集積化および小型化などの要請に対応して、チッ
プ上に形成される電極の密度が飛躍的に増大するに伴
い、隣合うボンディングワイヤ相互の間隔および線径は
微細化の一途をたどっており、これにより、ボンディン
グワイヤ同士の接触やボンディングワイヤと半導体チッ
プのエッジとの接触に起因するショート、さらにはボン
ディングワイヤの剛性の低下によるワイヤループ異常等
の様々な問題が生じている。On the other hand, in response to the recent demand for higher integration and miniaturization of semiconductor integrated circuits, the density of electrodes formed on a chip has increased dramatically, and adjacent bonding wires have been formed. The distance between each other and the wire diameter are steadily becoming finer, which causes a short circuit due to the contact between the bonding wires or the contact between the bonding wire and the edge of the semiconductor chip, and the wire due to the decrease in the rigidity of the bonding wire. Various problems such as loop abnormality are occurring.
【０００４】このような問題に対処するためにはボンデ
ィングワイヤのさらなる細線化、即ち現状での線径の下
限25μｍを大きく下回る線径10μｍ以下の超細線化が有
効であるが、従来同様の金属元素を用いて線径10μｍ以
下の超細線化を図った場合、ワイヤ強度の低下に伴いボ
ンディング時に断線が生じ易くなり、生産性の低下やボ
ンディング作業性の悪化等の新たな問題が発生する。In order to deal with such a problem, it is effective to make the bonding wire thinner, that is, to make the wire diameter 10 μm or less, which is much smaller than the current lower limit of 25 μm. When an element is used to make a wire having a diameter of 10 μm or less, disconnection is likely to occur during bonding due to a decrease in wire strength, which causes new problems such as a decrease in productivity and a deterioration in bonding workability.
【０００５】[0005]
【発明が解決しようとする課題】本発明は上述したよう
な従来事情に鑑みてなされたものであり、その目的とす
るところは、線径を10μｍ以下、好ましくは１μｍ程度
にまで極度に細線化しながら断線等の問題が発生する恐
れのない新規な構造のボンディングワイヤ、並びにその
超極細ワイヤを用いてなる新規な半導体装置を提供する
ことにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional circumstances, and an object thereof is to extremely thin a wire diameter to 10 μm or less, preferably about 1 μm. However, it is an object of the present invention to provide a bonding wire having a novel structure that does not cause a problem such as disconnection, and a novel semiconductor device using the ultrafine wire.
【０００６】[0006]
【課題を解決するための手段】以上の目的を達成する本
発明の半導体素子用複合ボンディングワイヤは、抗張力
の高い材質によって成形される支持芯線の周囲を金属導
体で被覆してなることを特徴とする。A composite bonding wire for a semiconductor device of the present invention that achieves the above object is characterized in that a supporting core wire formed of a material having high tensile strength is covered with a metal conductor. To do.
【０００７】上記支持芯線はワイヤの中心部にあってワ
イヤにかかる張力に抗する役割を持ち、電気電導は周囲
に被覆した金属導体が受け持つため支持芯線においては
電導性は必ずしも必要としない。また支持芯線は抗張力
の高い材質により成形することから、線径10μｍ以下の
超細線化が可能であると共にボンディング時において所
定のループ強度を保持し得、具体的には周囲の金属導体
との接合が可能な性質を兼ね備えたもの、即ち合成樹
脂，合成繊維のような有機材料、炭素繊維，溶融シリカ
繊維，ＳｉＣ繊維のような無機材料、高張力鋼，ピアノ
線，ステンレス鋼，タングステンのような抗張力の高い
金属材料等が挙げられるが、なかでも熱で軟化してボン
ディングが容易になる等の理由から、熱可塑性合成樹
脂，熱可塑性合成繊維を用いることが好ましい。The support core wire has a role of resisting the tension applied to the wire at the center of the wire, and the metal conductor coated around the electric conductor takes charge of the electric conduction, so that the support core wire does not necessarily need to be electrically conductive. In addition, since the supporting core wire is made of a material with high tensile strength, it is possible to make ultra-thin wires with a wire diameter of 10 μm or less and to maintain a predetermined loop strength during bonding. That have the property of being capable of being used, that is, organic materials such as synthetic resins and synthetic fibers, inorganic materials such as carbon fibers, fused silica fibers, SiC fibers, high-tensile steel, piano wire, stainless steel, and tungsten. Examples of the material include a metal material having a high tensile strength. Among them, it is preferable to use a thermoplastic synthetic resin or a thermoplastic synthetic fiber because it is softened by heat to facilitate bonding.
【０００８】金属導体は支持芯線の周囲にあって、電気
信号を導く役割と半導体チップに対する接合の役割を持
っており、従来のボンディングワイヤの成形材料として
知られている金属元素、即ちＡｕ，Ａｇ，Ｃｕ，Ａｌ，
Ｐｄ，Ｐｔ，Ｐｂの中の１種、若しくはその金属元素を
主体とする合金を用いる。金属導体で支持芯線を被覆す
るには、材質に応じて無電解めっき，電解めっき，真空
蒸着，スパッタリング等の手法を適宜選択して行うこと
ができる。The metal conductor is provided around the supporting core wire and has a role of guiding an electric signal and a role of joining to a semiconductor chip. The metal elements, namely Au and Ag, which are known as conventional molding materials for bonding wires, are used. , Cu, Al,
One of Pd, Pt, and Pb, or an alloy mainly containing the metal element is used. In order to coat the supporting core wire with the metal conductor, a method such as electroless plating, electrolytic plating, vacuum deposition, or sputtering can be appropriately selected and performed according to the material.
【０００９】本発明の複合ワイヤを用いたボンディング
方法としては、従来から知られているボールボンディン
グ法、ウエッジボンディング法等が利用できる。As a bonding method using the composite wire of the present invention, a conventionally known ball bonding method, wedge bonding method or the like can be used.
【００１０】[0010]
【実施例】以下、本発明にかかる複合ボンディングワイ
ヤの実施例を図１及び図２を参照して説明する。 （実施例１）支持芯線１として線径１μｍのポリエステ
ル繊維を用い、この支持芯線１の周囲に無電解めっきで
厚さ０．２μｍのＡｕ被膜２を形成してボンディングワ
イヤａを作製した（図１参照）。EXAMPLES Examples of composite bonding wires according to the present invention will be described below with reference to FIGS. 1 and 2. Example 1 A polyester wire having a diameter of 1 μm was used as the supporting core wire 1, and an Au coating film 2 having a thickness of 0.2 μm was formed around the supporting core wire 1 by electroless plating to prepare a bonding wire a (FIG. 1).
【００１１】このボンディングワイヤａを用いて、半導
体チップ３上の多数の電極４と、各電極４に対応せしめ
て形成した外部リード５とをウエッジボンディング法に
よりボンディングし、３００ピンクラスのＱＦＰ構造の
半導体装置を作製した（図２参照）。Using this bonding wire a, a large number of electrodes 4 on the semiconductor chip 3 and external leads 5 formed corresponding to the respective electrodes 4 are bonded by a wedge bonding method to obtain a 300-pin class QFP structure. A semiconductor device was manufactured (see FIG. 2).
【００１２】この半導体装置を評価したところ、隣合う
ボンディングワイヤａ，ａ相互間及びボンディングワイ
ヤａと半導体チップ３のエッジ3aとの間での接触による
ショート、並びに夫々のボンディングワイヤａにおける
ループ異常等の問題は一切なく、良好な動作を確認し
た。When this semiconductor device was evaluated, short-circuiting due to contact between adjacent bonding wires a, a and between the bonding wires a and the edge 3a of the semiconductor chip 3, and a loop abnormality in each bonding wire a, etc. There was no problem with, and confirmed good operation.
【００１３】（実施例２）上記ポリエステル繊維に代え
て線径１μｍのポリアセタールワイヤを用いて支持芯線
１とし、この支持芯線１の周囲に無電解めっきで厚さ
０．２μｍのＡｕ被膜２を形成してボンディングワイヤ
ａを作製した。Example 2 A polyacetal wire having a wire diameter of 1 μm was used in place of the above polyester fiber to form a supporting core wire 1, and an Au coating 2 having a thickness of 0.2 μm was formed around the supporting core wire 1 by electroless plating. Then, a bonding wire a was produced.
【００１４】このボンディングワイヤａを用いて実施例
１と同様な半導体装置を作製した。この半導体装置を評
価したところ、結果は実施例１と同じく良好なものであ
った。Using this bonding wire a, a semiconductor device similar to that of Example 1 was manufactured. When this semiconductor device was evaluated, the results were as good as in Example 1.
【００１５】（実施例３）上記ポリエステル繊維に代え
て線径１μｍのポリアミドワイヤを用いて支持芯線１と
し、この支持芯線１の周囲にスパッタリングで厚さ０．
１μｍのＡｌ被膜２を形成してボンディングワイヤａを
作製した。Example 3 Instead of the above polyester fiber, a polyamide wire having a wire diameter of 1 μm was used to form a supporting core wire 1, and the supporting core wire 1 was sputtered to a thickness of 0.
A 1 μm Al coating 2 was formed to produce a bonding wire a.
【００１６】このボンディングワイヤａを用いて実施例
１と同様な半導体装置を作製した。この半導体装置を評
価したところ、結果は実施例１と同じく良好なものであ
った。Using this bonding wire a, a semiconductor device similar to that of Example 1 was manufactured. When this semiconductor device was evaluated, the results were as good as in Example 1.
【００１７】[0017]
【発明の効果】本発明の複合ボンディングワイヤは以上
説明したように、抗張力の高い材質からなる支持芯線の
周囲を金属導体で被覆した構成としたので、従来不可能
だった線径10μｍ以下の超細線化が可能となり、この超
極細ワイヤを用いてチップ電極と外部リードをボンディ
ングすることで、隣合うボンディングワイヤ同士の接触
やボンディングワイヤとチップのエッジとの接触による
ショート、並びにワイヤループ異常等の発生を防いで、
一層の高集積化，小型化が可能で且つ信頼性の高い半導
体装置を提供することができる。As described above, the composite bonding wire of the present invention has a structure in which the periphery of the supporting core wire made of a material having a high tensile strength is covered with a metal conductor, so that it is possible to obtain an ultra-fine wire having a diameter of 10 μm or less, which has been impossible in the past. Thinning is possible, and by bonding the chip electrode and external lead using this ultra-fine wire, short-circuiting due to contact between adjacent bonding wires or contact between the bonding wire and the edge of the chip, and wire loop abnormality etc. Prevent outbreak,
It is possible to provide a highly reliable semiconductor device that can be further highly integrated and miniaturized.
【図１】 本発明複合ボンディングワイヤの断面構造を
示す斜視図。FIG. 1 is a perspective view showing a cross-sectional structure of a composite bonding wire of the present invention.
【図２】 図１に示すボンディングワイヤを用いてなる
半導体装置の要部拡大断面図。FIG. 2 is an enlarged cross-sectional view of a main part of a semiconductor device using the bonding wire shown in FIG.
ａ：ボンディングワイヤ １：支持芯線
２：金属導体 ３：半導体チップ ４：電極
５：外部リード ６：基板a: Bonding wire 1: Support core wire
2: Metal conductor 3: Semiconductor chip 4: Electrode
5: External lead 6: Board
Claims (6)
位置とを電気的に接続するボンディングワイヤであっ
て、抗張力の高い材質によって成形される支持芯線の周
囲を金属導体で被覆してなることを特徴とする半導体素
子用複合ボンディングワイヤ。1. A bonding wire for electrically connecting a first position and a second position in a semiconductor element, wherein a supporting core wire formed of a material having high tensile strength is coated with a metal conductor. A composite bonding wire for a semiconductor device, which is characterized in that
繊維等の有機材料であることを特徴とする請求項１記載
の半導体素子用複合ボンディングワイヤ。2. The composite bonding wire for a semiconductor element according to claim 1, wherein the material of the supporting core wire is an organic material such as synthetic resin or synthetic fiber.
シリカ繊維又はＳｉＣ繊維等の無機材料であることを特
徴とする請求項１記載の半導体素子用複合ボンディング
ワイヤ。3. The composite bonding wire for a semiconductor element according to claim 1, wherein the material of the supporting core wire is an inorganic material such as carbon fiber, fused silica fiber or SiC fiber.
ノ線又はステンレス鋼又はタングステン等の抗張力の高
い金属であることを特徴とする請求項１記載の半導体素
子用複合ボンディングワイヤ。4. The composite bonding wire for a semiconductor element according to claim 1, wherein the material of the supporting core wire is a high tensile strength steel, a piano wire, a stainless steel, a metal such as tungsten having a high tensile strength.
ｕ，Ａｌ，Ｐｄ，Ｐｔ，Ｐｂの中の１種、若しくはその
金属元素を主体とする合金であることを特徴とする請求
項１記載の半導体素子用複合ボンディングワイヤ。5. The material of the metal conductor is Au, Ag, C
2. The composite bonding wire for a semiconductor device according to claim 1, which is one of u, Al, Pd, Pt, and Pb, or an alloy mainly containing the metal element thereof.
グワイヤで電気的に接続した半導体素子を封止してなる
半導体装置であって、前記ボンディングワイヤが、抗張
力の高い材質によって成形される支持芯線の周囲を金属
導体で被覆してなることを特徴とする半導体装置。6. A semiconductor device in which a semiconductor element in which a first position and a second position are electrically connected by a bonding wire is sealed and the bonding wire is formed of a material having high tensile strength. A semiconductor device comprising a supporting core wire covered with a metal conductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5212799A JPH0766235A (en) | 1993-08-27 | 1993-08-27 | Composite bonding wire for semiconductor element and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5212799A JPH0766235A (en) | 1993-08-27 | 1993-08-27 | Composite bonding wire for semiconductor element and semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0766235A true JPH0766235A (en) | 1995-03-10 |
Family
ID=16628576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5212799A Pending JPH0766235A (en) | 1993-08-27 | 1993-08-27 | Composite bonding wire for semiconductor element and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0766235A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1388496A1 (en) | 2002-08-09 | 2004-02-11 | Ricoh Company, Ltd. | Device and method for attaching stretch labels |
| KR100978028B1 (en) * | 2005-09-13 | 2010-08-25 | 쇼와 덴코 가부시키가이샤 | Light-emitting device |
| US7812358B2 (en) | 2005-09-13 | 2010-10-12 | Showa Denko K.K. | Light-emitting device |
| US7956469B2 (en) | 2007-07-27 | 2011-06-07 | Nichia Corporation | Light emitting device and method of manufacturing the same |
| JP2012019177A (en) * | 2010-07-09 | 2012-01-26 | Nisshin Steel Co Ltd | WIRE BONDING STRUCTURE USING Al PLATED STEEL WIRE |
| US9735331B2 (en) | 2015-11-19 | 2017-08-15 | Samsung Electronics Co., Ltd. | Bonding wire for semiconductor package and semiconductor package including same |
| US20220299643A1 (en) * | 2015-10-19 | 2022-09-22 | Skansense S.L.U. | Obtaining data from targets using imagery and other remote sensing data |
-
1993
- 1993-08-27 JP JP5212799A patent/JPH0766235A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1388496A1 (en) | 2002-08-09 | 2004-02-11 | Ricoh Company, Ltd. | Device and method for attaching stretch labels |
| US7191514B2 (en) | 2002-08-09 | 2007-03-20 | Ricoh Company Limited | Stretch label attaching device |
| KR100978028B1 (en) * | 2005-09-13 | 2010-08-25 | 쇼와 덴코 가부시키가이샤 | Light-emitting device |
| US7812358B2 (en) | 2005-09-13 | 2010-10-12 | Showa Denko K.K. | Light-emitting device |
| US7956469B2 (en) | 2007-07-27 | 2011-06-07 | Nichia Corporation | Light emitting device and method of manufacturing the same |
| JP2012019177A (en) * | 2010-07-09 | 2012-01-26 | Nisshin Steel Co Ltd | WIRE BONDING STRUCTURE USING Al PLATED STEEL WIRE |
| US20220299643A1 (en) * | 2015-10-19 | 2022-09-22 | Skansense S.L.U. | Obtaining data from targets using imagery and other remote sensing data |
| US9735331B2 (en) | 2015-11-19 | 2017-08-15 | Samsung Electronics Co., Ltd. | Bonding wire for semiconductor package and semiconductor package including same |
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