TW201146080A - Light emitting device, light emitting device package, and lighting system - Google Patents

Light emitting device, light emitting device package, and lighting system Download PDF

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Publication number
TW201146080A
TW201146080A TW100111523A TW100111523A TW201146080A TW 201146080 A TW201146080 A TW 201146080A TW 100111523 A TW100111523 A TW 100111523A TW 100111523 A TW100111523 A TW 100111523A TW 201146080 A TW201146080 A TW 201146080A
Authority
TW
Taiwan
Prior art keywords
light
layer
light emitting
emitting device
current density
Prior art date
Application number
TW100111523A
Other languages
English (en)
Chinese (zh)
Inventor
Sun-Kyung Kim
Original Assignee
Lg Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Innotek Co Ltd filed Critical Lg Innotek Co Ltd
Publication of TW201146080A publication Critical patent/TW201146080A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures

Landscapes

  • Led Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)
TW100111523A 2010-04-23 2011-04-01 Light emitting device, light emitting device package, and lighting system TW201146080A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100037876A KR101047720B1 (ko) 2010-04-23 2010-04-23 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지

Publications (1)

Publication Number Publication Date
TW201146080A true TW201146080A (en) 2011-12-16

Family

ID=44318191

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100111523A TW201146080A (en) 2010-04-23 2011-04-01 Light emitting device, light emitting device package, and lighting system

Country Status (6)

Country Link
US (2) US8431944B2 (enExample)
EP (1) EP2381489B1 (enExample)
JP (1) JP2011233893A (enExample)
KR (1) KR101047720B1 (enExample)
CN (1) CN102280816B (enExample)
TW (1) TW201146080A (enExample)

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KR102131599B1 (ko) 2013-12-16 2020-07-09 삼성디스플레이 주식회사 발광 다이오드 및 그 제조 방법
CN104154468B (zh) * 2014-09-01 2016-08-31 深圳市华星光电技术有限公司 背光模组
JP6398744B2 (ja) * 2015-01-23 2018-10-03 三菱電機株式会社 半導体デバイス用基板の製造方法
CN105098014A (zh) * 2015-06-04 2015-11-25 京东方科技集团股份有限公司 发光二极管及其制造方法
US10681777B2 (en) * 2016-04-01 2020-06-09 Infineon Technologies Ag Light emitter devices, optical filter structures and methods for forming light emitter devices and optical filter structures
US10347814B2 (en) 2016-04-01 2019-07-09 Infineon Technologies Ag MEMS heater or emitter structure for fast heating and cooling cycles
DE102016125430A1 (de) * 2016-12-22 2018-06-28 Osram Opto Semiconductors Gmbh Oberflächenmontierbarer Halbleiterlaser, Anordnung mit einem solchen Halbleiterlaser und Betriebsverfahren hierfür
KR102090933B1 (ko) * 2019-08-13 2020-03-19 엘지디스플레이 주식회사 발광다이오드 광원부를 포함하는 자외선 조사장치

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US6784462B2 (en) * 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
JP4263121B2 (ja) * 2003-03-27 2009-05-13 三洋電機株式会社 発光素子および照明装置
US6831302B2 (en) * 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
US20050205883A1 (en) * 2004-03-19 2005-09-22 Wierer Jonathan J Jr Photonic crystal light emitting device
US7768023B2 (en) * 2005-10-14 2010-08-03 The Regents Of The University Of California Photonic structures for efficient light extraction and conversion in multi-color light emitting devices
US7161188B2 (en) * 2004-06-28 2007-01-09 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element
KR100616596B1 (ko) * 2004-07-09 2006-08-28 삼성전기주식회사 질화물 반도체 소자 및 제조방법
KR20060038756A (ko) * 2004-11-01 2006-05-04 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법
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CN101523603B (zh) * 2006-08-06 2013-11-06 光波光电技术公司 具有一个或多个谐振反射器的ⅲ族氮化物发光器件以及用于该器件的反射工程化生长模板和方法
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KR101426288B1 (ko) * 2007-12-27 2014-08-06 엘지디스플레이 주식회사 발광 다이오드 및 그 제조방법
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JP2009260316A (ja) * 2008-03-26 2009-11-05 Panasonic Electric Works Co Ltd 半導体発光素子およびそれを用いる照明装置
KR20100003321A (ko) * 2008-06-24 2010-01-08 삼성전자주식회사 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및발광 장치의 제조 방법
KR20100030472A (ko) * 2008-09-10 2010-03-18 삼성전자주식회사 발광 소자 및 발광 장치의 제조 방법, 상기 방법을 이용하여 제조한 발광 소자 및 발광 장치
TWI373153B (en) * 2008-09-22 2012-09-21 Ind Tech Res Inst Light emitting diode, and package structure and manufacturing method therefor
KR100969160B1 (ko) 2009-03-10 2010-07-21 엘지이노텍 주식회사 발광소자 및 그 제조방법
JP2011061036A (ja) * 2009-09-10 2011-03-24 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI596982B (zh) * 2012-06-21 2017-08-21 貝尼克公司 透明無機式薄膜電激發光顯示元件及用以製造該顯示元件的方法

Also Published As

Publication number Publication date
US8431944B2 (en) 2013-04-30
JP2011233893A (ja) 2011-11-17
EP2381489A2 (en) 2011-10-26
CN102280816B (zh) 2015-03-25
CN102280816A (zh) 2011-12-14
KR101047720B1 (ko) 2011-07-08
EP2381489B1 (en) 2018-05-30
EP2381489A3 (en) 2014-03-19
US8748927B2 (en) 2014-06-10
US20110211354A1 (en) 2011-09-01
US20130240938A1 (en) 2013-09-19

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