CN102280816B - 发光器件、发光器件封装以及照明系统 - Google Patents

发光器件、发光器件封装以及照明系统 Download PDF

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Publication number
CN102280816B
CN102280816B CN201110108202.4A CN201110108202A CN102280816B CN 102280816 B CN102280816 B CN 102280816B CN 201110108202 A CN201110108202 A CN 201110108202A CN 102280816 B CN102280816 B CN 102280816B
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China
Prior art keywords
light emitting
layer
light
emitting device
current density
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CN201110108202.4A
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Chinese (zh)
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CN102280816A (zh
Inventor
金鲜京
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Suzhou Liyu Semiconductor Co ltd
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LG Innotek Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures

Landscapes

  • Led Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)
CN201110108202.4A 2010-04-23 2011-04-25 发光器件、发光器件封装以及照明系统 Active CN102280816B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100037876A KR101047720B1 (ko) 2010-04-23 2010-04-23 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR10-2010-0037876 2010-04-23

Publications (2)

Publication Number Publication Date
CN102280816A CN102280816A (zh) 2011-12-14
CN102280816B true CN102280816B (zh) 2015-03-25

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CN201110108202.4A Active CN102280816B (zh) 2010-04-23 2011-04-25 发光器件、发光器件封装以及照明系统

Country Status (6)

Country Link
US (2) US8431944B2 (enExample)
EP (1) EP2381489B1 (enExample)
JP (1) JP2011233893A (enExample)
KR (1) KR101047720B1 (enExample)
CN (1) CN102280816B (enExample)
TW (1) TW201146080A (enExample)

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US9226362B2 (en) * 2012-06-21 2015-12-29 Beneq Oy Transparent inorganic thin-film electroluminescent display element and method for manufacturing it
US9273851B2 (en) * 2013-01-30 2016-03-01 Shenzhen China Star Optoelectronics Technology Co., Ltd Backlight module and liquid crystal display device
KR102131599B1 (ko) 2013-12-16 2020-07-09 삼성디스플레이 주식회사 발광 다이오드 및 그 제조 방법
CN104154468B (zh) * 2014-09-01 2016-08-31 深圳市华星光电技术有限公司 背光模组
JP6398744B2 (ja) * 2015-01-23 2018-10-03 三菱電機株式会社 半導体デバイス用基板の製造方法
CN105098014A (zh) * 2015-06-04 2015-11-25 京东方科技集团股份有限公司 发光二极管及其制造方法
US10681777B2 (en) * 2016-04-01 2020-06-09 Infineon Technologies Ag Light emitter devices, optical filter structures and methods for forming light emitter devices and optical filter structures
US10347814B2 (en) 2016-04-01 2019-07-09 Infineon Technologies Ag MEMS heater or emitter structure for fast heating and cooling cycles
DE102016125430A1 (de) * 2016-12-22 2018-06-28 Osram Opto Semiconductors Gmbh Oberflächenmontierbarer Halbleiterlaser, Anordnung mit einem solchen Halbleiterlaser und Betriebsverfahren hierfür
KR102090933B1 (ko) * 2019-08-13 2020-03-19 엘지디스플레이 주식회사 발광다이오드 광원부를 포함하는 자외선 조사장치

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JP4263121B2 (ja) * 2003-03-27 2009-05-13 三洋電機株式会社 発光素子および照明装置
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Also Published As

Publication number Publication date
TW201146080A (en) 2011-12-16
US8431944B2 (en) 2013-04-30
JP2011233893A (ja) 2011-11-17
EP2381489A2 (en) 2011-10-26
CN102280816A (zh) 2011-12-14
KR101047720B1 (ko) 2011-07-08
EP2381489B1 (en) 2018-05-30
EP2381489A3 (en) 2014-03-19
US8748927B2 (en) 2014-06-10
US20110211354A1 (en) 2011-09-01
US20130240938A1 (en) 2013-09-19

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Legal Events

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Effective date of registration: 20210817

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China