TW201145387A - Plasma film-forming apparatus and plasma film-forming method - Google Patents

Plasma film-forming apparatus and plasma film-forming method Download PDF

Info

Publication number
TW201145387A
TW201145387A TW100105160A TW100105160A TW201145387A TW 201145387 A TW201145387 A TW 201145387A TW 100105160 A TW100105160 A TW 100105160A TW 100105160 A TW100105160 A TW 100105160A TW 201145387 A TW201145387 A TW 201145387A
Authority
TW
Taiwan
Prior art keywords
substrate
film
plasma
electrode
gas
Prior art date
Application number
TW100105160A
Other languages
English (en)
Chinese (zh)
Inventor
Yuichi Kawano
Toshihito Fujiwara
Akihiko Matsukura
Takuya Kamiyama
Tetsuya Yamamoto
Original Assignee
Mitsubishi Heavy Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Ind Ltd filed Critical Mitsubishi Heavy Ind Ltd
Publication of TW201145387A publication Critical patent/TW201145387A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Plasma Technology (AREA)
TW100105160A 2010-02-26 2011-02-16 Plasma film-forming apparatus and plasma film-forming method TW201145387A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010042554A JP2011181599A (ja) 2010-02-26 2010-02-26 プラズマ成膜装置及び方法

Publications (1)

Publication Number Publication Date
TW201145387A true TW201145387A (en) 2011-12-16

Family

ID=44506584

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100105160A TW201145387A (en) 2010-02-26 2011-02-16 Plasma film-forming apparatus and plasma film-forming method

Country Status (3)

Country Link
JP (1) JP2011181599A (cg-RX-API-DMAC10.html)
TW (1) TW201145387A (cg-RX-API-DMAC10.html)
WO (1) WO2011105163A1 (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6009870B2 (ja) * 2012-09-11 2016-10-19 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP5971144B2 (ja) * 2013-02-06 2016-08-17 東京エレクトロン株式会社 基板処理装置及び成膜方法
JP7670876B1 (ja) 2024-01-15 2025-04-30 日本特殊陶業株式会社 半導体基板処理用基台、セラミックス基材、および製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04271122A (ja) * 1991-02-27 1992-09-28 Fuji Electric Co Ltd プラズマ処理装置
JP4398802B2 (ja) * 2004-06-17 2010-01-13 東京エレクトロン株式会社 基板処理装置
US8709162B2 (en) * 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support

Also Published As

Publication number Publication date
WO2011105163A1 (ja) 2011-09-01
JP2011181599A (ja) 2011-09-15

Similar Documents

Publication Publication Date Title
TW554416B (en) Film forming method and film forming device
US9324561B2 (en) Silicon carbide epitaxial wafer, and preparation method thereof
CN107408493B (zh) 脉冲氮化物封装
CN101410958B (zh) 等离子体cvd设备、形成薄膜的方法及半导体装置
WO2008024566A2 (en) Overall defect reduction for pecvd films
TW201220400A (en) Silicon nitride film-forming device and method
JP2015181149A (ja) 基板処理装置及び半導体装置の製造方法並びに記録媒体
JP4052454B2 (ja) 酸化シリコン膜又は窒化シリコン膜の製造方法
WO2010001815A1 (ja) 半導体装置用絶縁膜、半導体装置用絶縁膜の製造方法及び製造装置、半導体装置及びその製造方法
KR20140113037A (ko) 기판 처리 장치 및 복합막 제조 방법
JPH05217922A (ja) プラズマによる気相からの層析出方法
Liu et al. Atomic layer deposition of aluminum nitride thin films from trimethyl aluminum (TMA) and ammonia
TWI831824B (zh) 非uv高硬度低介電常數膜沉積
WO2011105163A1 (ja) プラズマ成膜装置及び方法
WO2022138155A1 (ja) 絶縁膜の形成方法及び処理装置
KR20070057284A (ko) 막의 제조방법 및 당해 방법으로 제조된 막을 이용한반도체 장치
KR102892149B1 (ko) 탄소-함유 재료들의 촉매 열 증착
JP5069598B2 (ja) ガスバリアフィルムの製造方法
KR101926678B1 (ko) 탄화규소 에피 웨이퍼 및 이의 제조 방법
JP5069597B2 (ja) ガスバリアフィルムの製造方法
US20140154423A1 (en) Apparatus and method for deposition
CN107408494A (zh) 缺陷平面化
US20260015717A1 (en) Methods of filling gap on substrate surface
US20250290198A1 (en) Method of depositing silicon nitride thin film in trench of substrate
KR20130077488A (ko) 탄화규소 증착 방법