TW201138164A - Package structure of light emitting device and connection substrate thereof - Google Patents

Package structure of light emitting device and connection substrate thereof Download PDF

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Publication number
TW201138164A
TW201138164A TW99112038A TW99112038A TW201138164A TW 201138164 A TW201138164 A TW 201138164A TW 99112038 A TW99112038 A TW 99112038A TW 99112038 A TW99112038 A TW 99112038A TW 201138164 A TW201138164 A TW 201138164A
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Taiwan
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substrate
light
hole
heat dissipation
heat
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TW99112038A
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Chinese (zh)
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TWI538266B (en
Inventor
Wei-Kang Cheng
Kuo-Chin Huang
Fang-I Li
Yi-Sheng Ting
Shyi-Ming Pan
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Formosa Epitaxy Inc
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Priority to TW099112038A priority Critical patent/TWI538266B/en
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Publication of TWI538266B publication Critical patent/TWI538266B/en

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Abstract

A connection substrate includes a first heat-dissipation material and a second heat-dissipation material. The first heat-dissipation material at least has a first via hole and a second via hole. The second heat-dissipation material at least partially fills in the first via hole and the second via hole, wherein thermal conductivity coefficients of the first heat-dissipation material and the second heat-dissipation material are bigger than 100 W/mk, and the second heat-dissipation material is electrical-conductive. A package structure of a light emitting device includes the aforementioned connection substrate and one or a plurality of light emitting devices. The light emitting device is disposed on the connection substrate, wherein the light emitting device includes a cathode and an anode which are electrically connected to the second heat-dissipation material of the first via hole and the second via hole respectively.

Description

201138164 六、發明說明: 【發明所屬之技術領域】 本發明侧於_種發光元件封裝結構與其連接基板,尤指一種 使用不同散熱基材組成的連接基板與其封裴結構。 【先前技術】 發光-極體晶片由於具有體積小、效率高、壽命長、反應時間快、 演色度南、;f含對環境有害的料優點,已經廣泛的運用於生活環 境中。此外’全球各國政府禁用采的環保政策,也驅使各薇商加緊 投入白光發光二極體的研發與應用。在全球環保風潮方興未艾之 際,發光一極體產業可說是最有潛力的產業之一。 然而,目則發光二極體晶片仍有大部分的輸入功率會轉換為熱, 例如一般高功率發光二極體晶片之輸入功率大約僅有2〇 %會轉換 成光,其餘80 %則轉變成為熱。若這些熱未能及時排出至外界, 會使輕薄短小的發光二極體晶片晶粒界面溫度過高,而降低其發光 效率及壽命。舉例來說,傳統式發光二極體晶片一般以藍寶石 (sapphire)作為基板,其藍寶石的熱傳導係數約只有2〇w/mK,不易 將蠢晶層所產生的熱快速地排出。而習知的導線架(lead frame)型或 是印刷電路板(printed circuit board,PCB)型的發光二極體晶片封裝 201138164 結構’其封裝基板與封裝膠材均為塑膠或樹脂等導熱性不佳的材 質,而發光二極體晶片於發光時會不斷產生熱能,因此在無法快速 有效散熱的狀況下,累積的熱將使得發光二極體晶片的溫度升高, 而影響發光二極體晶片的發光效率與使用壽命。 【發明内容】 本發明之目的之一在於提供一種發光元件封裝結構與其連接基 板’以解決習知技術所面臨之限制與缺點。 本發明之一較佳實施例提供一種連接基板,用以承載一發光元 件。上述發連接基板包括一第一散熱基材與一第二散熱基材。第一 散熱基材至少具有—第一貫穿孔與_第二貫穿孔^第二散熱基材至 少部分填充於第一散熱基材之第一貫穿孔以及第二貫穿孔中,且第 -貫穿孔巾的第二散熱基材與第二貫?孔中的第二賴基材彼此電 性不相連’其巾第-散熱基材與第二散熱基材之熱傳導係數係大於 100 w/mk ’且第二散熱基材具有導電性。 、本發明之-較佳實關另提供—觀光元件雖結構,其包括 上述之連接基板與-個或複數個發統件,光元件係設置於連接 基板上,其中發統件包括—貞極與—正極,分別與第—貫穿孔與 第二貫穿孔内之第二散熱基材電性連接。 〃 5 201138164 本發明之發光元件封裝結構,利用由高熱傳導係數的第一散熱 基材與第二散熱基材組成的連接基板,使連接基板上所承載的發光 讀於發光騎產生的熱’可以直接經由連接基板向下方傳導散 熱。另外’第二散熱基材係具有導電性,藉以將外部電源透過第二 散熱基材傳送到發光元件。因此,本發明的導熱與導電設計,能有 效提供最大熱傳導面積,提升其散熱效果。 【實施方式】 為使熟習本發明所屬技術領域之_般技藝者能更進-步了解本 發明,下文特列舉本發明之數個較佳實施例,並配合所附圖式,詳 細說明本發明的構成内容。需注意的是圖式僅以說明為目的, 並未依照原尺寸作圖。另外,在說明#及後續的巾請專利範圍當 中使用了某些詞彙來指稱财的元件。所屬賴巾具有通常知識者 應可理解,製箱可能會用不_名詞來稱呼哪的元件。本說明 書及後續的申請專觀圍並不以名稱的差異來作為_元件的方 疋乂元件在功月匕上的差異來作為區別的基準。在通篇說明書 及後續的請求項當中所提及的「包括」係為一開放式的用語,故應 解釋成「包括但不限定於」。 月參考第1圖,第1圖為本發明第一較佳實施例之發光 元件封裝結構與其連接基板之示意圖。如第丨圖所示,第一 較佳實施例之發光元件封裝結構主要包括—連接基板1〇與 201138164 一發光元件15。連接基板1 〇係用來承載發光元件i5,且連接 基板10包括一第一散熱基材η與一第二散熱基材12。其中,第 一散熱基材11與第二散熱基材12之熱傳導係數係大於1〇〇 w/mk。 在本較佳實施例中,發光元件15係為一發光二極體晶片,但 不以此為限’而可以是其他有散熱需求的發光元件。因此,發光元201138164 VI. Description of the Invention: [Technical Field] The present invention relates to a light-emitting device package structure and a connection substrate thereof, and more particularly to a connection substrate composed of different heat dissipation substrates and a sealing structure thereof. [Prior Art] The illuminating-polar body wafer has been widely used in the living environment due to its small size, high efficiency, long life, fast reaction time, and south color rendering; f contains environmentally harmful materials. In addition, the environmental protection policies that have been banned by governments around the world have also driven the various companies to step up their investment in the development and application of white light-emitting diodes. At a time when the global environmental protection trend is on the rise, the luminescent industry is one of the most promising industries. However, most of the input power of the LED chip is still converted into heat. For example, the input power of a general high-power LED chip is only about 2%, which is converted into light, and the remaining 80% is converted into heat. If these heats are not discharged to the outside world in time, the temperature of the grain interface of the light and short light-emitting diode chips will be too high, and the luminous efficiency and life will be lowered. For example, a conventional light-emitting diode wafer generally uses sapphire as a substrate, and its sapphire has a heat transfer coefficient of only about 2 〇 w/mK, which is difficult to quickly discharge the heat generated by the stupid layer. The conventional lead frame type or printed circuit board (PCB) type light emitting diode chip package 201138164 structure's package substrate and package rubber are not plastic or resin thermal conductivity. Good material, and the LED chip will generate heat continuously when it emits light. Therefore, in the case where the heat cannot be quickly and effectively dissipated, the accumulated heat will increase the temperature of the LED chip and affect the LED chip. Luminous efficiency and service life. SUMMARY OF THE INVENTION One object of the present invention is to provide a light emitting device package structure and a connecting substrate thereof to solve the limitations and disadvantages of the prior art. A preferred embodiment of the present invention provides a connection substrate for carrying a light-emitting element. The hair joining substrate comprises a first heat dissipating substrate and a second heat dissipating substrate. The first heat dissipation substrate has at least a first through hole and a second through hole 2. The second heat dissipation substrate is at least partially filled in the first through hole and the second through hole of the first heat dissipation substrate, and the first through hole The second heat-dissipating substrate of the towel is the second one? The second substrate in the hole is electrically disconnected from each other. The heat transfer coefficient of the towel-heat-dissipating substrate and the second heat-dissipating substrate is greater than 100 w/mk' and the second heat-dissipating substrate has electrical conductivity. The preferred embodiment of the present invention provides a sightseeing component, which comprises the above-mentioned connecting substrate and one or more hairline components, and the optical component is disposed on the connecting substrate, wherein the hair piece comprises a bungee And the positive electrode is electrically connected to the second heat dissipation substrate in the first through hole and the second through hole, respectively. 〃 5 201138164 The light-emitting device package structure of the present invention utilizes a connection substrate composed of a first heat-dissipating substrate and a second heat-dissipating substrate having a high thermal conductivity, so that the light emitted by the connection substrate is read by the heat generated by the light-emitting ride. The heat is radiated downward directly via the connection substrate. Further, the second heat dissipating substrate is electrically conductive, whereby the external power source is transmitted to the light emitting element through the second heat dissipating substrate. Therefore, the heat conduction and conduction design of the present invention can effectively provide the maximum heat conduction area and enhance the heat dissipation effect. [Embodiment] The present invention will be further described in detail by those skilled in the art to which the present invention pertains. The composition of the content. It should be noted that the drawings are for illustrative purposes only and are not mapped to the original dimensions. In addition, some words are used in the description of the # and subsequent patents to refer to the components of the money. It should be understood by those who have the usual knowledge that the box may use a component that is not called a noun. This specification and subsequent application monographs do not use the difference in name as the basis for the difference between the components of the component and the power of the component. The term "including" as used throughout the specification and subsequent claims is an open term and should be interpreted as "including but not limited to". Referring to Fig. 1, FIG. 1 is a schematic view showing a light emitting device package structure and a connection substrate thereof according to a first preferred embodiment of the present invention. As shown in the figure, the light-emitting element package structure of the first preferred embodiment mainly includes a connection substrate 1 and a light-emitting element 15 of 201138164. The connection substrate 1 is used to carry the light-emitting element i5, and the connection substrate 10 includes a first heat dissipation substrate η and a second heat dissipation substrate 12. The heat dissipation coefficient of the first heat dissipation substrate 11 and the second heat dissipation substrate 12 is greater than 1 〇〇 w/mk. In the preferred embodiment, the light-emitting element 15 is a light-emitting diode chip, but not limited thereto, and may be other light-emitting elements having heat dissipation requirements. Therefore, the illuminating element

件15於發光時所產生的熱可以直接經由連接基板1〇向下方傳導散 熱,且由於第一散熱基材11與第二散熱基材12具有高熱傳導係數, 因此可提升發光元件15的散熱效果。此外,如第1圖所示,第一 政熱基材11至少具有一第一貫穿孔13與一第二貫穿孔μ。其中, 本較佳實施例之第一貫穿孔13與第二貫穿孔14係分別具有一 垂直側壁,但本發明並不以此為限,例如可以是一傾斜側 壁。另外,第二散熱基材12係至少部分填充於第一散熱基材u 之第一貫穿孔13以及第二貫穿孔14中。例如在本較佳實施例中, 第二散熱基材12係填滿第一貫穿孔13與第二貫穿孔14。但本發明 並不以此為限,於其他實施態樣時,第二散熱基材12可以不必填滿 第一貫穿孔13與第二貫穿孔14,只需部分填充於第一貫穿孔η與 第二貫穿孔14中即可。並且,第-貫穿孔13中的第二散熱基材12 與第二貫穿孔14中的第二散熱基材12彼此電性不相連。另外,第 二散熱基材12係具有導電性,藉以將外部電源透過第二散熱基材 12傳送到發光元件15。由於第二散熱基材12作為導電通道7其 電導率(Electrical Conductivity)較佳係大於 6 Ω /cm。在本 實施例中,第一散熱基材11可以是矽,而第第二散熱基材12可 以是具高熱傳導係數的金屬材料,例如銀或鋁等,但不以此為限。 7 201138164 本發明之發光元件難結構與其連接基板並和上述實施 例為限,而具有其它不同的實施樣態。為了簡化說明並易於比較, 在下文之數錄佳實施财,對於_元件沿關_符號來表 示。請參考第2圖,第2圖為本發明第二較佳實施例之發光 疋件封裝結構與其連接基板之示意圖。如第2圖所示,第二 較佳實施例之發光元件封裝結構包括—連接基板1〇與一發: 元件20 ’其中發光元件2G係為—覆晶式發光二極體晶片 (flip-chip LED)。以下僅針對與第—較佳實施例主要變化的部份進 行說明,_處科贅述。第-個部份,第二較佳實施例之第二散 熱基材12係直接位於發光元件2〇的下方。因此,在第二較佳實施 例中,發光元件20透過第二散熱基材12的導電通路長度可以短於 第較佳實施例之導電通路長度,進而降低其電阻。第二個部份, 第二較佳實施例之第一散熱基材11與第二散熱基材12之間另 包括一絕緣層16。據此,在第一散熱基材具有導電性的情況 下’絕緣層16可以用以電性隔絕第一散熱基材η與第二散 熱基材12,避免第一貫穿孔π與第二貫穿孔14内的第二散熱 基材12透過第一散熱基材11彼此電性連接。此外,本較佳 實施例於第一散熱基材11中可以設置一靜電保護元件17。 例如’在第二較佳實施例中,靜電保護元件17可以是一埋入 式的齊納二極體(Zener diode),用以避免發光元件20因受到 突波或是過大的電壓而損壞。但本發明之靜電保護元件17 並不以此為限,而可以是其它具有抗突波功能的元件。值得 201138164 注意的是’用以電性隔絕第1熱基材11與第二散熱基材 12的絕緣層16 ’或用以抗突波的靜電保護元件17,亦可視 產品的需求而應用於第-較佳實施例或本發明其它的較佳 實施例中,而不限於第二較佳實施例。 值知/主意的疋,在第一較佳實施例中,絕緣層丨6的設 置位置並不以第2圖為限。請參考第3圖,第3圖為本發明 φ第一較佳實施例另一實施態樣之發光元件封裝結構與其連 接基板之示意圖。如第3圖所示,絕緣層16可以不只設置 於第一貫穿孔13與第二貫穿孔14之侧壁,也可以設置於連 接基板10的上表面與下表面。換言之,絕緣層16可以包覆 第一散熱基材11。據此,絕緣層丨6不僅可用以電性隔離第 一散熱基材11與第二散熱基材12,同時可用以電性隔離第 一散熱基材11與發光元件2〇以及電性隔離第一散熱基材11 鲁與連接基板10下方的其他元件(圖未示)。 請參考第4圖,第4圖為本發明第三較佳實施例之發光 元件封裝結構與其連接基板之示意圖。如第4圖所示,第三 較佳實施例之發光元件封裝結構包括一發光元件20與一連接 .基板10,且發光元件20係設置於連接基板1〇上。其中,發光 -元件20與第二較佳實施例相同’皆為一覆晶式發光二極體 晶片。以下將配合圖式進一步說明發光元件2〇的結構。在第三 較佳實施例中,發光元件20包括一負極21、一正極22、P犁摻雜 201138164The heat generated by the member 15 during the light emission can be directly radiated downward through the connection substrate 1 ,, and since the first heat dissipation substrate 11 and the second heat dissipation substrate 12 have a high heat transfer coefficient, the heat dissipation effect of the light-emitting element 15 can be improved. . Further, as shown in Fig. 1, the first thermal substrate 11 has at least a first through hole 13 and a second through hole μ. The first through hole 13 and the second through hole 14 of the preferred embodiment respectively have a vertical side wall, but the invention is not limited thereto, and may be, for example, an inclined side wall. Further, the second heat dissipation substrate 12 is at least partially filled in the first through hole 13 and the second through hole 14 of the first heat dissipation substrate u. For example, in the preferred embodiment, the second heat dissipation substrate 12 fills the first through hole 13 and the second through hole 14. However, the present invention is not limited thereto. In other embodiments, the second heat dissipation substrate 12 does not need to fill the first through hole 13 and the second through hole 14 , and only needs to be partially filled in the first through hole η and The second through hole 14 is sufficient. Further, the second heat dissipation substrate 12 in the first through hole 13 and the second heat dissipation substrate 12 in the second through hole 14 are electrically disconnected from each other. Further, the second heat dissipating substrate 12 is electrically conductive, whereby the external power source is transmitted to the light emitting element 15 through the second heat dissipating substrate 12. Since the second heat-dissipating substrate 12 serves as the conductive path 7, its electrical conductivity is preferably greater than 6 Ω/cm. In this embodiment, the first heat dissipating substrate 11 may be a crucible, and the second heat dissipating substrate 12 may be a metal material having a high thermal conductivity, such as silver or aluminum, but not limited thereto. 7 201138164 The difficult structure of the light-emitting element of the present invention is connected to the substrate and is limited to the above embodiment, and has other different embodiments. In order to simplify the description and to make it easier to compare, the following is a good example of implementation, and is indicated for the _component along the _ symbol. Please refer to FIG. 2, which is a schematic diagram of a light-emitting device package structure and a connection substrate thereof according to a second preferred embodiment of the present invention. As shown in FIG. 2, the light-emitting device package structure of the second preferred embodiment includes a connection substrate 1 and a light-emitting component: 20, wherein the light-emitting element 2G is a flip-chip light-emitting diode chip (flip-chip). LED). The following is only to explain the main changes of the first preferred embodiment, which are described in the section. In the first portion, the second heat-dissipating substrate 12 of the second preferred embodiment is directly under the light-emitting element 2''. Therefore, in the second preferred embodiment, the length of the conductive path of the light-emitting element 20 through the second heat-dissipating substrate 12 can be shorter than the length of the conductive path of the preferred embodiment, thereby reducing the electrical resistance. In the second portion, an insulating layer 16 is further disposed between the first heat dissipation substrate 11 and the second heat dissipation substrate 12 of the second preferred embodiment. Accordingly, in the case where the first heat dissipation substrate has conductivity, the insulating layer 16 can electrically isolate the first heat dissipation substrate η from the second heat dissipation substrate 12 to avoid the first through hole π and the second through hole. The second heat dissipation substrate 12 in the 14 is electrically connected to each other through the first heat dissipation substrate 11 . In addition, in the preferred embodiment, an electrostatic protection element 17 can be disposed in the first heat dissipation substrate 11. For example, in the second preferred embodiment, the electrostatic protection element 17 may be a buried Zener diode to prevent the light-emitting element 20 from being damaged by a surge or an excessive voltage. However, the electrostatic protection component 17 of the present invention is not limited thereto, but may be other components having an anti-surge function. It is worthy of 201138164 to note that 'the insulating layer 16' for electrically isolating the first thermal substrate 11 from the second heat-dissipating substrate 12 or the electrostatic protection element 17 for resisting surges may also be applied to the requirements of the product. The preferred embodiment or other preferred embodiments of the invention are not limited to the second preferred embodiment. In the first preferred embodiment, the position of the insulating layer 6 is not limited to the second drawing. Please refer to FIG. 3, which is a schematic diagram of a light emitting device package structure and a connection substrate thereof according to another embodiment of the first preferred embodiment of the present invention. As shown in Fig. 3, the insulating layer 16 may be provided not only on the side walls of the first through hole 13 and the second through hole 14, but also on the upper surface and the lower surface of the connection substrate 10. In other words, the insulating layer 16 may coat the first heat dissipation substrate 11. Accordingly, the insulating layer 6 can be used to electrically isolate the first heat-dissipating substrate 11 from the second heat-dissipating substrate 12, and can electrically isolate the first heat-dissipating substrate 11 from the light-emitting element 2 and electrically isolate the first. The heat dissipating substrate 11 is connected to other components under the substrate 10 (not shown). Please refer to FIG. 4, which is a schematic diagram of a light emitting device package structure and a connection substrate thereof according to a third preferred embodiment of the present invention. As shown in FIG. 4, the light emitting device package structure of the third preferred embodiment includes a light emitting device 20 connected to the substrate 10. The light emitting device 20 is disposed on the connection substrate 1A. The illuminating element 20 is the same as the second preferred embodiment, and is a flip-chip illuminating diode chip. The structure of the light-emitting element 2A will be further described below with reference to the drawings. In the third preferred embodiment, the light-emitting element 20 includes a negative electrode 21, a positive electrode 22, and a P-powder doping.

層23、主動層24 χτ , A 、N型摻雜層25、與透明基板%,但不以此為限。 此外為口曰加發光元件20的光取出效率,可進一步於N型摻雜 曰的表岭作出微突起結構(圖未了增加發光效率 或考量其它因专,欢, ,、毛光兀件20另可包含有其它膜層(圖未示),例如 注入層、傳輪層等常見之膜層。另外,發光元件2〇之負極21與 第貫穿孔13内之第二散熱基材12電性連接,而發光元件20之 正極22 ^第一貫穿孔14内之第二散熱基材12電性連接。據此,外 '^電,可透過第一貫穿孔13與第二貫穿孔14内之第二散熱基材 I2 —刀别將預„十提供給負極h與正極Μ的外部電源訊號傳送給發 光元件〇以驅動發光元件2〇。在本較佳實施例中發光元 件20可以利用—交流電或—直流電驅動。藉由本較佳實施 例之連接基板10具有第—散熱基材u與第二散熱基材丨2的設 計,以及第二散熱基材12同時具有導雜的設計,可搭配覆晶式 發光元件2G,有效的將發光元件2()的封裝尺寸縮小至3刪2 以下,尤其可以進-步縮小至2麵2以下。相較之下,傳 式的發光7L件封裝結構,受限於封裝打線,使得傳統型式的封 尺寸-般需要大於3 mm2。因此,本較佳實施例之導妖與^ 的設計,不但可使發光元件20整體垂直導熱而不受限於電 通導電通道,以達到最大的熱傳導面積,並且可以有 小發光元件20的封裝尺寸。 '縮 請參考第5圖,第5圖為本發明第四較佳實施例之 元件封裝結構與其連接基板之示意圖。如第5圖所示,第四 201138164 較佳實施例之發光元件封裝結構包括兩個發光元件2〇ι與2〇2 以及-連接基板H)’其中發光元件2〇1肖發光元件2〇2彼此 串聯相接。更明確的說,本較佳實施例係期設置於連接基 板U)上表面之-圖案化導電層27,分別與發光元件2〇ι之 正極22以及發光元件2〇2之負極21電性連接,以達到串聯發光 ^件2〇1與發光元件202的效果。另外,連接基板10之第-貫穿孔13内之第二散熱基材12電性連接至發光元件2⑴之負極 21 ’而連接基板1G之第二貫穿孔14内之第二散絲材12電性連 接至發光元件搬之正極22。再者,外部電源可透過第_貫穿孔 與第二貫穿孔14内之第二散熱基材12,分別將外部電源訊號提 :給串聯的發光元件加與發光元件加。據此,本較佳實 ^例之發光元件封裝結構’利用連接基板1〇上的圖案化導 層_27,搭配連接基板1〇之第一貫穿孔13與第二貫穿孔丨斗内 放熱基材12 ’可輕易實現發光元件2〇1與2〇2的串聯, :不需要習知的封裝打線’也不需、要額外的電路轉換器,進 θ達到縮小封裝尺寸與降低製作成本的功效。值得注意的 :發? 了簡化說明,本較佳實施例以兩個發光元件為例,但 相月並不此為限,而可以是三個以上的發光元件彼此串聯 ^另外,透過將複數個發光元件彼此串聯相接,玎以使 &月發光元件封裝結構之發光元件操作於高電壓下。 -你巧參考第6圖’第6圖為本發明第五較佳實施例之發光 封裝結構與其連接基板之示意圖。如第6圖所示,第五 201138164 較佳實施例之發光元件封裝結構包括兩個發光元件2〇1與2〇2 以及一連接基板ίο,其中兩個發光元件20係藉由連接基板 10彼此串聯相接。更明確的說,在本較佳實施例中,發光元 件201之負極21與第一散熱基材11之第一貫穿孔131内之第二 散熱基材12電性連接’而發光元件201之正極22與第一散熱基 材11之第二貫穿孔141内之第二散熱基材12電性連接;並且,發 光元件202之負極21與第一散熱基材11之第一貫穿孔η]内 之第二散熱基材12電性連接,而發光元件202之正極22與連接 基板10之第二貫穿孔142内之第二散熱基材12電性連接。再者,_ 本較佳實施例另包括設置於連接基板1〇下表面的一圖案化導 電層28 ’用以將第一散熱基材11之第二貫穿孔14ι内之第_ 散熱基材12以及第一貫穿孔132内之第二散熱基材12兩者電性連 接。據此,本較佳實施例可以透過連接基板1〇,將發光元件 與發光元件202彼此串聯相接,而不需要習知的封裝打線, 也不需要額外的電路轉換器,進而達到縮小封裝尺寸與降低 製作成本的功效。同樣的,本發明並不僅限於兩個發光元 _ 件,而可以應用於三個以上的發光元件之串聯設計。 請參考第7圖,第7圖為本發明第六較佳實施例之發光 元件封裝結構與其連接基板之示意圖。如第7圖所示,第六 較佳實知例之發光元件封裝結構包括一發光元件與一連接 基板10,且發光元件20係設置於連接基板1〇上,其中連接基 板10之第一貫穿孔13與第二貫穿孔14分別具有一傾斜相f 12 201138164 壁。更明確的說,在本較佳實施例中,第一貫穿孔13與第二 貫穿孔14之傾斜侧壁可以具有兩種不同傾斜角度的傾斜側 壁。再者,第二散熱基材12係至少部分填充於第一散熱基材u 之第-貫穿孔mx及第二貫穿孔14中。換言之,第六較佳實施例 之第一散熱基材12並未填滿第一貫穿孔13以及第二貫穿孔14,而Layer 23, active layer 24 χτ, A, N-type doped layer 25, and transparent substrate%, but not limited thereto. In addition, the light extraction efficiency of the light-emitting element 20 is further increased, and the micro-protrusion structure can be further formed on the surface of the N-type doped germanium (the figure does not increase the luminous efficiency or consider other special factors, and the flashing element 20 In addition, other film layers (not shown) may be included, such as a common film layer such as an injection layer and a transfer layer. In addition, the negative electrode 21 of the light-emitting element 2 and the second heat-dissipating substrate 12 in the through-hole 13 are electrically The second heat-dissipating substrate 12 in the first through-hole 14 is electrically connected to the positive electrode 22 of the light-emitting element 20. According to the above, the first through hole 13 and the second through-hole 14 are transparently connected. The second heat dissipating substrate I2 - the knife sends the external power signal supplied to the negative electrode h and the positive electrode 给 to the illuminating element 〇 to drive the illuminating element 2 〇. In the preferred embodiment, the illuminating element 20 can utilize - alternating current Or the DC drive. The connection substrate 10 of the preferred embodiment has the design of the first heat dissipation substrate u and the second heat dissipation substrate 丨2, and the second heat dissipation substrate 12 has a design of impurity conduction at the same time. The crystal light-emitting element 2G is effective for the light-emitting element 2() The size of the package is reduced to 3 or less, and in particular, it can be further reduced to 2 or less. In contrast, the transmission type of the 7L package is limited by the package wire, which makes the traditional type of package size generally required. It is greater than 3 mm 2. Therefore, the design of the demon and the light of the preferred embodiment can not only make the light-emitting element 20 vertically thermally conductive but not limited to the electric conduction path to achieve the maximum heat conduction area, and can have small light-emitting elements. The package size of 20. 'Reference to FIG. 5, FIG. 5 is a schematic diagram of the component package structure and the connection substrate thereof according to the fourth preferred embodiment of the present invention. As shown in FIG. 5, the fourth embodiment of 201138164 is preferred. The light emitting element package structure includes two light emitting elements 2〇ι and 2〇2 and a connection substrate H)' wherein the light emitting elements 2〇1 and the light emitting elements 2〇2 are connected in series with each other. More specifically, the preferred embodiment The patterned conductive layer 27 is disposed on the upper surface of the connection substrate U), and is electrically connected to the positive electrode 22 of the light-emitting element 2〇 and the negative electrode 21 of the light-emitting element 2〇2, respectively, to achieve the serial light-emitting device 2〇1 Effective with the light-emitting element 202 In addition, the second heat dissipation substrate 12 in the first through hole 13 of the connection substrate 10 is electrically connected to the negative electrode 21 ′ of the light emitting element 2 ( 1 ) and the second loose wire 12 in the second through hole 14 of the connection substrate 1G is electrically connected. The external power source can be connected to the second heat dissipation substrate 12 in the first through hole and the second through hole 14 respectively, and the external power source signal is respectively added to the light source component connected in series. According to the present invention, the light-emitting device package structure of the preferred embodiment uses a patterned conductive layer _27 on the connection substrate 1 to match the first through hole 13 and the second through hole 连接 of the connection substrate 1 The heat-dissipating substrate 12' in the bucket can easily realize the series connection of the light-emitting elements 2〇1 and 2〇2, without the need for a conventional package wire-in addition, no additional circuit converter is required, and θ is reduced to reduce the package size and reduce The cost of production costs. It is noted that the simplified description is given. The preferred embodiment uses two light-emitting elements as an example, but the phase is not limited thereto, and three or more light-emitting elements may be connected in series to each other. The light-emitting elements are connected in series to each other so that the light-emitting elements of the & month light-emitting element package structure operate at a high voltage. - Figure 6 is a schematic view of a light-emitting package structure and a connection substrate thereof according to a fifth preferred embodiment of the present invention. As shown in FIG. 6, the light-emitting element package structure of the fifth embodiment of the preferred embodiment includes two light-emitting elements 2〇1 and 2〇2 and a connection substrate ίο, wherein the two light-emitting elements 20 are connected to each other by the connection substrate 10. Connected in series. More specifically, in the preferred embodiment, the negative electrode 21 of the light-emitting element 201 is electrically connected to the second heat-dissipating substrate 12 in the first through-hole 131 of the first heat-dissipating substrate 11 and the positive electrode of the light-emitting element 201 22 is electrically connected to the second heat dissipation substrate 12 in the second through hole 141 of the first heat dissipation substrate 11; and the negative electrode 21 of the light emitting element 202 and the first through hole η] of the first heat dissipation substrate 11 The second heat dissipation substrate 12 is electrically connected, and the positive electrode 22 of the light-emitting element 202 is electrically connected to the second heat dissipation substrate 12 in the second through hole 142 of the connection substrate 10 . Furthermore, the preferred embodiment further includes a patterned conductive layer 28 ′ disposed on the lower surface of the connection substrate 1 for disposing the first heat dissipation substrate 12 in the second through hole 14 ι of the first heat dissipation substrate 11 . And electrically connecting the second heat dissipation substrate 12 in the first through hole 132. Accordingly, the preferred embodiment can connect the light-emitting element and the light-emitting element 202 to each other in series through the connection substrate 1 without the need of a conventional package wire or an additional circuit converter, thereby reducing the package size. And reduce the cost of production. Similarly, the present invention is not limited to two illuminating elements, but can be applied to a series design of three or more illuminating elements. Please refer to FIG. 7. FIG. 7 is a schematic view showing a light emitting device package structure and a connection substrate thereof according to a sixth preferred embodiment of the present invention. As shown in FIG. 7 , the light-emitting device package structure of the sixth preferred embodiment includes a light-emitting element and a connection substrate 10 , and the light-emitting element 20 is disposed on the connection substrate 1 , wherein the first connection of the substrate 10 is The perforations 13 and the second through holes 14 respectively have a sloped phase f 12 201138164 wall. More specifically, in the preferred embodiment, the inclined side walls of the first through hole 13 and the second through hole 14 may have inclined side walls of two different inclination angles. Furthermore, the second heat dissipation substrate 12 is at least partially filled in the first through hole mx and the second through hole 14 of the first heat dissipation substrate u. In other words, the first heat dissipation substrate 12 of the sixth preferred embodiment does not fill the first through hole 13 and the second through hole 14, and

是僅填充於第-貫穿孔13以及第二貫穿孔14内靠近發光元件2〇 的一側。但本發明並不以此為限,而可以視產品需求填充於第一貫 穿孔13以及第二貫穿孔14内的其他部分。據此,本較佳實施例 不但可以透過高熱傳導係數的第一散熱基材丨丨與第二散熱基材 ’將發光兀件20發光時所產生的熱向下方傳導散熱,同時可以 透過第-貫穿孔13以及第二貫穿孔14内具有導電性的第二散執基 材L將外部電源提供給發光元件2〇。此外,本較佳實施例另包 括—透鏡18’設置於發光元件2〇與連接基板1〇上用以增 加發光元件2〇的取光效率’進而提升發光元件2〇的發光效率。其 。中、’ g透鏡18可以是一半球體形狀,但本發明並不以此為限,而 了Μ是其他有助於提升取光效率的結構。另外,在傳統型式的發光 件封裝、、Ό構中’為了使透鏡與基板間的連接有足夠的物理 度透鏡吊需額外的卡榫式幾何結構,亦或是於基板上設計一 ^固古定透鏡的支架。但是,其支架形式會受限於透鏡製程, 、度無法有效優化的缺點。相較之下,本較佳實施例之透 :18無其他卡榫式幾何結構,僅具有複數個凸出部⑻,部分 入第胃穿孔13與第二貫穿孔Μ内,使透鏡Μ的凸出 81得以卡住於第一貫穿孔13與第二貫穿孔14内,藉此 13 201138164 固定透鏡18於連接基板10上。據此,本較佳實施例利用第 一貫穿孔13以及第二貫穿孔14的設計,可以增加發光元件封裝 結構内透鏡18與連接基板1〇間連接的物理強度,且使透鏡 製程可調性增加,同時可以達到優化發光元件2〇之發光亮 度的優點。 綜上所述,本發明之發光元件封裝結構,利用由高熱傳導係 數的第-散絲材與第二散絲材城的連接基板,使連接基板上 所承載的發光元件於發光時所產生的熱,可以直接經由連接基板向春 下方傳導散熱。另外,第二散熱基材係具有導電性,藉以將外部電 源透過第二散熱基材傳送到發光元件。據此,本發明的導熱與導電 設計’能有效提供最大熱傳導面積,提升其散熱效果。此外,本發 明可搭配覆晶式發光元件’有效的將發光元件的封裝尺寸縮小。再 者,複數個發光元件可以彼此串聯相接或藉由連接基板彼此串聯相 接’而不需要習知的封裝打線’也不需要額外的電路轉換器,進而 達到縮小封裝尺寸與降低製作成本的功效。另外,利用第一貫穿孔鲁 以及第二貫穿孔的設計,可以增加發光元件封裝結構内透鏡與連 接基板間連接的物理強度,且增加透鏡製程的可調性,並有效優 化發光元件之發光亮度。 以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍 所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。 14 201138164 【圖式簡單說明】 接基 第1圖為本^第一較佳實施例之發光元件封t結構與其連 板之不意圖Λ 其連接基 第7^^第"健實關之發光元件封裝結構與 第3 圖為本發明第二較佳實施例另—實施態樣 與其連接基板之示意圖。 灸先凡件封裝結構 第4圖為本發邮三難狀發私 板之示意圖。 封裝、,,。構與其連接基 第5圖為本發明第四較佳實施例 板之示意圖。 疋牛封農結構與其連接基 第6圖為本發明第五齡實施例之 板之示意圖。 几封裴結構與其連接基 第7圖為本㈣第六健實施例之發光 板之示意圖 元件封裝結構與其連接基 【主要元件符號說明】 第一散熱基材 第一貫穿孔與 發光元件 靜電保護元件 連接基板 第一散熱基材 第二貫穿孔 絕緣層 15 201138164 20 發光元件 21 負極 22 正極 23 P型摻雜層 24 主動層 25 N型摻雜層 26 透明基板 201 發光元件 202 發光元件 27 圖案化導電層 28 圖案化導電層 131 第一貫穿孔 132 第一貫穿孔 141 第二貫穿孔 142 第二貫穿孔 18 透鏡 181 凸出部It is filled only in the first through hole 13 and the second through hole 14 on the side close to the light emitting element 2''. However, the present invention is not limited thereto, and may be filled in the first through-hole 13 and other portions in the second through-hole 14 depending on product requirements. Accordingly, the preferred embodiment can not only transmit heat generated by the first heat-dissipating substrate 高 and the second heat-dissipating substrate ′ when the light-emitting element 20 emits light, but also can transmit heat through the first- The second diffusion substrate L having conductivity in the through hole 13 and the second through hole 14 supplies an external power source to the light emitting element 2A. In addition, the preferred embodiment further includes a lens 18' disposed on the light-emitting element 2A and the connection substrate 1A for increasing the light extraction efficiency of the light-emitting element 2', thereby improving the light-emitting efficiency of the light-emitting element 2''. Its. The medium-g lens 18 may have a half-spherical shape, but the present invention is not limited thereto, and the crucible is another structure that contributes to an improvement in light extraction efficiency. In addition, in the conventional type of light-emitting device package and structure, in order to make the connection between the lens and the substrate have sufficient physicality, the lens crane requires an additional card-like geometry, or a design on the substrate. A lens holder. However, the form of the stent is limited by the lens process, and the degree cannot be effectively optimized. In contrast, the transparent 18 of the preferred embodiment has no other card-like geometry, and has only a plurality of protrusions (8), partially into the stomach perforation 13 and the second through-hole, so that the lens is convex. The 81 is caught in the first through hole 13 and the second through hole 14, whereby the 13 201138164 fixed lens 18 is attached to the substrate 10. Accordingly, the preferred embodiment utilizes the design of the first through hole 13 and the second through hole 14 to increase the physical strength of the connection between the lens 18 and the connection substrate 1 in the light emitting device package structure, and to adjust the lens process. The advantage of optimizing the illuminance of the illuminating element 2 同时 can be achieved at the same time. In summary, the light-emitting device package structure of the present invention utilizes a connection substrate of a first-filament material and a second-filament material having a high thermal conductivity to cause a light-emitting element carried on the connection substrate to emit light. The heat can be transmitted to the lower part of the spring directly through the connection substrate. Further, the second heat dissipating substrate is electrically conductive, whereby the external power source is transmitted to the light emitting element through the second heat dissipating substrate. Accordingly, the heat conduction and conduction design of the present invention can effectively provide the maximum heat conduction area and enhance the heat dissipation effect. In addition, the present invention can be used with a flip-chip light-emitting element to effectively reduce the package size of the light-emitting element. Furthermore, the plurality of light-emitting elements can be connected in series with each other or in series with each other by the connection substrate, without the need for a conventional package wire, and no additional circuit converter is required, thereby achieving a reduction in package size and a reduction in manufacturing cost. efficacy. In addition, by using the design of the first through hole and the second through hole, the physical strength of the connection between the lens and the connecting substrate in the light emitting device package structure can be increased, the adjustability of the lens process can be increased, and the light emitting brightness of the light emitting element can be effectively optimized. . The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should fall within the scope of the present invention. 14 201138164 [Simplified description of the drawings] Fig. 1 is a schematic diagram of the light-emitting element sealing structure of the first preferred embodiment and its connection with the board. The connection of the seventh and the second The component package structure and Fig. 3 are schematic views showing another embodiment of the second preferred embodiment of the present invention and a substrate thereof. Moxibustion first package structure Figure 4 is a schematic diagram of the three-difficult private board. Package,,,. Structure and connection thereof Fig. 5 is a schematic view showing a fourth preferred embodiment of the present invention. Yak closure structure and its connection base Fig. 6 is a schematic view of the fifth embodiment of the invention. FIG. 7 is a schematic diagram of a component package structure and a connection base thereof of the illuminating plate of the sixth embodiment of the present invention. [Main component symbol description] First heat dissipation substrate first through hole and light-emitting element electrostatic protection component Connecting substrate first heat dissipating substrate second through hole insulating layer 15 201138164 20 light emitting element 21 negative electrode 22 positive electrode 23 P type doping layer 24 active layer 25 N type doping layer 26 transparent substrate 201 light emitting element 202 light emitting element 27 patterned conductive Layer 28 patterned conductive layer 131 first through hole 132 first through hole 141 second through hole 142 second through hole 18 lens 181 convex portion

1616

Claims (1)

201138164 七、申請專利範圍: 1. 一種連接基板,用以承載一發光元件,其連接基板包括: 一第一散熱基材,至少具有一第一貫穿孔與一第二貫穿孔;以及 一第一散熱基材,至少部分填充於該第一散熱基材之該第一貫穿 孔以及該第二貫穿孔中,且該第一貫穿孔中的該第二散熱基 材與該第二貫穿孔中的該第二散熱基材彼此電性不相連,其 中該第一散熱基材與該第二散熱基材之熱傳導係數係大於 100 W/mk,且該第二散熱基材具有導電性。 2·如請求項1所述之連接基板,其中該第—散熱基材具有導電性, 且該第-散熱基材與該第二散熱基材之間另包括一絕緣層,用以 電性隔絕該第一散熱基材與該第二散熱基材。 3. 如晴求項1所述之連接基板,另包括一靜電保護元件,設置於該 第一散熱基材中。 4. 如凊求項3所述之連接基板’其中該靜電保護元件包括—齊納二 極體(Zener diode) 〇 5. 如明求項1所述之連接基板,其巾該第—貫穿孔與該第二貫穿孔 分別具有一垂直側壁。 17 201138164 6. 如請求項1所述之連接基板,其中該第一貫穿孔與該第二貫穿孔 分別具有一傾斜侧壁。 7. 如請求項1所述之連接基板,其中該第二散熱基材之電導率 (Electrical Conductivity)係大於 1〇-6 〇/cm。 8. —種發光元件封裝結構,包括: 如請求項1至8之其中-項所述之連接基板;以及 一個或複數個發統件,設置於該連接紐上,其中該發光元 件包括-負極與-正極,分別與該第一貫穿孔與該第二貫穿孔 内之該苐二散熱基材電性連接。 ’其中該發光元件係為一覆 9.如請求項8所述之發光元件封裝結構, 晶式發光二極體(flip chip led)晶片。201138164 VII. Patent application scope: 1. A connection substrate for carrying a light-emitting component, wherein the connection substrate comprises: a first heat dissipation substrate having at least a first through hole and a second through hole; and a first The heat dissipating substrate is at least partially filled in the first through hole and the second through hole of the first heat dissipation substrate, and the second heat dissipation substrate and the second through hole in the first through hole The second heat dissipating substrate is electrically disconnected from each other, wherein the first heat dissipating substrate and the second heat dissipating substrate have a heat transfer coefficient greater than 100 W/mk, and the second heat dissipating substrate has electrical conductivity. The connection substrate of claim 1, wherein the first heat dissipation substrate has electrical conductivity, and the first heat dissipation substrate and the second heat dissipation substrate further comprise an insulating layer for electrically isolating The first heat dissipation substrate and the second heat dissipation substrate. 3. The connection substrate according to claim 1, further comprising an electrostatic protection element disposed in the first heat dissipation substrate. 4. The connection substrate of claim 3, wherein the electrostatic protection element comprises a Zener diode 〇 5. The connection substrate according to claim 1, wherein the first through hole And the second through hole respectively have a vertical sidewall. The connection substrate according to claim 1, wherein the first through hole and the second through hole respectively have an inclined side wall. 7. The connection substrate of claim 1, wherein the electrical conductivity of the second heat dissipation substrate is greater than 1 〇 -6 〇 / cm. 8. A light-emitting element package structure comprising: the connection substrate according to any one of claims 1 to 8; and one or more hair elements disposed on the connection, wherein the light-emitting element comprises a negative electrode And the positive electrode are electrically connected to the first through hole and the second heat dissipation substrate in the second through hole. The light-emitting element is a cover. The light-emitting element package structure according to claim 8 is a flip chip led wafer. 10. Π.如請求項8 串聯相接。 所述之發光元件封裝結構 其中該等發光元件彼此 12.如請求項11 所述之發私件封裝結構 由5亥連接基板彼此串聯相接。 ,其中該等發光元件係藉 201138164 13. 如請求項8所述之發光元件封裝結構,另包括一透鏡,設置於 該發光元件與該連接基板上。 14. 如請求項13所述之發光元件封裝結構,其中該透鏡具有複數個 凸出部,部分填入該第一貫穿孔與該第二貫穿孔内,用以固定該 透鏡。 φ 八、囷式:10. 如 If request item 8 is connected in series. The light-emitting element package structure in which the light-emitting elements are in contact with each other. 12. The private-package structure as described in claim 11 is connected to each other in series by a 5-gallon connection substrate. The light-emitting element package structure according to claim 8, further comprising a lens disposed on the light-emitting element and the connection substrate. 14. The light emitting device package structure of claim 13, wherein the lens has a plurality of protrusions partially filled in the first through hole and the second through hole for fixing the lens. Φ 八, 囷 type: 1919
TW099112038A 2010-04-16 2010-04-16 Package structure of light emitting device and connection substrate thereof TWI538266B (en)

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Application Number Priority Date Filing Date Title
TW099112038A TWI538266B (en) 2010-04-16 2010-04-16 Package structure of light emitting device and connection substrate thereof

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TW201138164A true TW201138164A (en) 2011-11-01
TWI538266B TWI538266B (en) 2016-06-11

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