1325640 九、發明說明： 【發明所屬之技術領域】 本發明是關於一種具高散熱性之發光二極體模組’尤係 關於一種用於高亮度照明或顯示圖文之發光二極體模組。 【先前技術】 發光二極趙元件由於耗電量少、體積小及使用壽命長， 目前廣泛地使用於家電用品之指示燈、液晶顯示器之背光 源、圓文顯示幕及汽車第三煞車燈等應用。近年來由於如 磷化鋁鎵銦（AlGainP)及氮化鋁鎵銦（AlGalnN)等發光 二極體材料已被成功開發，因此能夠在許多應用上以發光 二極體元件取代傳統的白熾燈泡。 傳統高亮度發光二極體元件之發光效率每顆約在10〜15 流明/瓦（Lm/W )，經由各方面技術之不斷的改善與提昇 已使發光效率可達到50流明/瓦以上。為使亮度能繼續提 高’除了需解決外在封裝的問題，亦需設計能接受更高電 功率和提供更大電流表現之特性。由於消耗之電功率增加 也致使熱能量的產生問題嚴重，過熱的工作溫度會使得發 光二極體元件之亮度無法達到設定規格之標準，而嚴重影 響整個發光二極體元件顯示幕的性能表現》 如圊1所示，習知之發光二極體顯示幕之顯示模組1〇係 將複數個發光二極體元件11以高密度陣列的型式黏著在一 印刷電路板12上。由於發光二極體元件11之封裝體"I 之熱傳導性不佳，故晶粒11 〇產生之熱能量大多藉由外引 腳112傳導出來。其中一部份之熱能量由外引腳U2直接 HAHU\LGC\A34276U 03086\l030S6.doc 103086 •1325640 散逸至環境空氣中（熱傳路徑以箭頭表示），另有一部份 熱傳導至印刷電路板12而逸散出。 該印刷電路板12之金屬線路121之面積可散熱的能力有 限’主要仍需藉由佔整體比例最大之複合基材丨22，例如 FR-4來進行散熱。然FR_4是由環氧樹脂與玻璃纖維含浸 與壓覆而成，其熱傳導性不佳，所以無法有效傳導熱能量。 換§之，大部分由晶粒110傳來之熱能量並無法藉由該基 材122之表面而予以散逸出。同樣地，不止FR_4基材有散 熱不良之缺點，其他種高分子樹脂（PTEF或PI )與纖維狀 補強材料（玻璃纖維、氬醯酸纖維或石英纖維）製成之基 材也都有著同樣的問題》 綜上所述，市場上亟需要一種具高散熱性之發光二極體 模組’俾能改善高亮度照明裝置或顯示模組之亮度品質。 【發明内容】 本發明之目的係提供一種具高散熱性之發光二極體模 組’可有效將發光二極體元件產生的熱量直接並迅速地傳 導至散熱板之表面’再藉由該表面之大面積使熱迅速散逸 至空氣中》 為達上述目的’本發明揭示一種具高散熱性之發光二極 體模組，其包含一具有複數個貫穿孔之模組基板、複數個 固定於該模組基板上之復晶式發光二極體元件及至少—散 熱板。該發光二極體元件之封裝基板係於一導熱但不導電 之基材表面形成傳遞電氣訊號之線路層，因此散熱和導電 之路徑並不相同’故可增加該覆晶式發光二極體元件照明 H:\HU\LGC\A34276\1030S6\l03086.doc A34276 1〇3〇86 •1325640 亮度之穩定性。又該覆晶式發光二極體元件表面設置一散 熱片，該散熱片穿越過該模組基板上對應之貫穿孔，並以 導熱膠或焊錫和該散熱板直接相互結合。 該覆晶式發光二極體元件之封裝基板上可設置靜電放電 (electrostatic discharge ; ESD )防制元件或電阻，其中該 靜電放電防制元件可避免靜電荷累積過多而燒毁電路，該 電阻可用來調變該發光二極體元件之阻抗β 【實施方式】 圖2為本發明之發光二極體模組之外觀示意囷。該發光 二極體模組20包含一具有複數個貫穿孔213 (參見圖3) 之模組基板21，以及複數個表面黏著於該模組基板21上之 覆晶式發光二極體元件22。藉由外部驅動電路（囫未示） 可控制發光二極體模組20之照明，或者使發光二極體元件 22顯示預定之圖形或文字。於模組基板21下方設有至少_ 散熱板25 ’該散熱板25可直接將發光二極體元件22產生 之熱量傳導至空氣中》 圖3係發光二極體模組沿圖2中1 一 1剖面線之剖視圖。 為能有效解決前述散熱問題，該模組基板21包括一絕緣之 基材212，以及至少一設於基材212上之線路層211。 覆晶式發光二極體元件22包括模封材料22卜晶粒222、 凸塊223及封裝基板226，藉由凸塊223 (或錫球）使得晶 粒222及封裝基板226中之Ν型導電銅箔224和Ρ型導電 銅箔227電性相連。該模封材料221係一透明之塑膠材料， 晶粒222發出之光線可直接或經反射後由模封材料221上 H:\HU\LGC\A34276\103086\103086.doc Α34276 1〇3〇86 .1325640 表面穿出。設置於該N型導電銅箔224和p型導電銅箔227 間為絕緣層225。 可選擇熱傳導佳之材料作為絕緣層225，例如係數為ι4〇 〜230 ( W/M · K )之氮化鋁（A1N )或相同特性之其他材 料，由於氮化鋁之熱傳導係數高（相較於鐵的8〇 2 W/M · K )故能將晶粒222產生之熱量快速傳遞至下表面，同樣也 可採用相同特性之其他陶瓷材料取代氮化鋁。 另外，發光二極體元件22之N型導電銅箔224和P型導 電銅箔227係藉由焊錫23和電路層211電性相連，此亦為 發光二極體模組20之導電路徑《為能加速排除發光二極體 το件22内部晶粒222產生之熱量，會在封裝基板226之絕 緣層225表面固接一散熱片24。該散熱片24穿越過該模組 基板21上對應之貫穿孔213，並藉由焊錫23 (或導熱膠） 和散熱板25直接結合，因此晶粒222產生之熱量可經過散 熱片24和焊錫23而直接傳遞至散熱板25，利用散熱板25 廣大表面積以達到快速散熱至大氣之目的。由於散熱和導 電之路徑並不相同，故可使得導電路徑不受熱傳遞之影 響，因而增加該發光二極體元件22照明亮度之穩定性。 囷4係本發明之發光二極體模組之一應用實施例之示意 圊。將一導光板41置於發光二極體元件22同側，由發光 二極體元件22發出之光線可藉由導光板41將光線均勻 化，如此發光二極體模組40可作為液晶顯示器之背光源。 如圖5所示，又可將複數個透鏡51設於每一發光二極體 元件2 2發光表面側，該發光一極體模組§ 〇可作為照明穿 H:\HU\LGCVA34276U〇3〇WU〇3〇86.<|〇c •1325640 置，例如：交通號誌燈或汽車第三煞車燈。 發光二極體元件22’之封裝基板226,上可設置靜電放電 (electrostatic discharge ; ESD )防制元件 61 或電阻，如圓 ό所示。該靜電放電防制元件61可避免靜電累積過多而燒 毀電路，若為電阻則可用來調變該發光二極體元件22，之阻 抗。且仍以模封材料22 Γ來保護發光二極體晶粒（圖未示）。 本發明之技術内容及技術特點已揭示如上，然而熟悉本 魯項技術之人士仍可能基於本發明之教示及揭示而作種種不 背離本發明精神之替換及修飾。因此，本發明之保護範圍 應不限於實施例所揭示者，而應包括各種不背離本發明之 替換及修飾，並為以下之申請專利範圍所涵蓋。 【圖式簡單說明】 圖1係習知發光二極體顯示幕之顯示模組之示意圖； 圖2為本發明之發光二極體模組之外觀示意圖； 圖3係發光二極體模組沿圖2中1 一 1剖面線之剖視圖； # 圖4係本發明之發光二極體模組之一應用實施例之示意 圖； 圖5係本發明之發光二極體模組之另一應用實施例之示 意圖；以及 圖6係本發明之覆晶式發光二極體元件之一應用實施例 之示意圖。 【主要元件符號說明】 11 發光二極體元件 20 發光二極體模組 -9 · A34276 103086 10 顯示模組 12 印刷電路板 H:\HlAUXAA34276\l〇3〇86\l〇3〇86.d〇c 1325640 21 模組基板 11、 22' 發光二極體元件 23 焊錫 24 散熱片 25 散熱板 40 發光二極體模組 41 導光板 50 發光二極體模組 51 透鏡 61 靜電放電防制元件 110 晶粒 111 封裝體 112 外引腳 121 金屬線路 122 基材 211 線路層 212 基材 221 、221' 模封材料 222 晶粒 223 凸塊 224 N型導電銅箔 225 絕緣層 226 、226' 封裝基板 227 P型導電銅箔 H:\HU\LGCVA34276M 03086\103086.doc · 10 -1325640 IX. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode module with high heat dissipation, in particular to a light-emitting diode module for high-brightness illumination or display image . [Prior Art] Due to low power consumption, small size and long service life, the illuminating dipole element is widely used in the indicator light of household appliances, the backlight of liquid crystal display, the display screen of the text, and the third lamp of the automobile. application. In recent years, light-emitting diode materials such as aluminum gallium indium phosphide (AlGainP) and aluminum gallium indium nitride (AlGalnN) have been successfully developed, so that conventional incandescent light bulbs can be replaced with light-emitting diode elements in many applications. The luminous efficiency of the conventional high-brightness light-emitting diode elements is about 10 to 15 lumens per watt (Lm/W), and the luminous efficiency can reach 50 lumens/watt or more through continuous improvement and improvement of various technologies. In order to continue to increase the brightness, in addition to solving the problem of external packaging, it is also necessary to design features that can accept higher power and provide greater current performance. Due to the increase of the consumed electric power, the problem of generating thermal energy is serious. The working temperature of the overheating will make the brightness of the LED component unable to reach the standard of the set specification, which seriously affects the performance of the display screen of the entire LED component. As shown in FIG. 1, the display module 1 of the conventional light-emitting diode display screen has a plurality of light-emitting diode elements 11 adhered to a printed circuit board 12 in a high-density array. Since the thermal conductivity of the package "I of the light-emitting diode element 11 is not good, most of the thermal energy generated by the die 11 is conducted by the outer pin 112. A part of the thermal energy is directly discharged from the external pin U2 to HAHU\LGC\A34276U 03086\l030S6.doc 103086 • 1325640 to the ambient air (the heat transfer path is indicated by the arrow), and a part of the heat is transferred to the printed circuit board 12 And escaped. The area of the metal line 121 of the printed circuit board 12 has a limited ability to dissipate heat. The main need to dissipate heat by the composite substrate 22 having the largest proportion, for example, FR-4. However, FR_4 is impregnated and pressed by epoxy resin and glass fiber, and its thermal conductivity is not good, so it cannot effectively conduct thermal energy. In other words, most of the thermal energy transmitted by the die 110 cannot be dissipated by the surface of the substrate 122. Similarly, not only does the FR_4 substrate have the disadvantage of poor heat dissipation, but other types of polymer resins (PTEF or PI) and the fibrous reinforcing material (glass fiber, argon phthalate fiber or quartz fiber) have the same substrate. Problem: In summary, there is a need in the market for a high-efficiency LED module that can improve the brightness quality of high-brightness lighting devices or display modules. SUMMARY OF THE INVENTION The object of the present invention is to provide a light-emitting diode module with high heat dissipation, which can effectively and directly transfer the heat generated by the light-emitting diode element to the surface of the heat-dissipating plate. The large area allows the heat to quickly dissipate into the air. In order to achieve the above object, the present invention discloses a light-emitting diode module with high heat dissipation, which comprises a module substrate having a plurality of through holes, and a plurality of fixed A polycrystalline LED component on the module substrate and at least a heat sink. The package substrate of the LED component is formed on a surface of a thermally conductive but non-conductive substrate to form a circuit layer for transmitting electrical signals, so that the path of heat dissipation and conduction is not the same, so the flip-chip LED component can be added. Illumination H:\HU\LGC\A34276\1030S6\l03086.doc A34276 1〇3〇86 •1325640 Brightness stability. Further, a surface of the flip-chip type LED device is provided with a heat dissipating sheet, and the heat dissipating fin passes through the corresponding through hole on the module substrate, and is directly bonded to each other by a heat conductive glue or solder and the heat dissipating plate. An electrostatic discharge (ESD) control element or resistor may be disposed on the package substrate of the flip-chip light-emitting diode element, wherein the electrostatic discharge control element prevents excessive accumulation of static charge and burns the circuit, and the resistor can be used. To modulate the impedance β of the light-emitting diode element. [Embodiment] FIG. 2 is a schematic diagram of the appearance of the light-emitting diode module of the present invention. The LED module 20 includes a module substrate 21 having a plurality of through holes 213 (see FIG. 3), and a plurality of flip-chip LED elements 22 whose surfaces are adhered to the module substrate 21. The illumination of the LED module 20 can be controlled by an external drive circuit (not shown) or the LED element 22 can be displayed with a predetermined pattern or text. At least _ heat sink 25 is disposed under the module substrate 21. The heat sink 25 can directly conduct heat generated by the LED component 22 into the air. FIG. 3 is a light-emitting diode module along FIG. 1 section view of the section line. In order to effectively solve the above heat dissipation problem, the module substrate 21 includes an insulating substrate 212 and at least one wiring layer 211 disposed on the substrate 212. The flip-chip LED component 22 includes a molding material 22, a die 222, a bump 223, and a package substrate 226. The bump 223 (or solder ball) causes the die 222 and the package substrate 226 to be electrically conductive. The copper foil 224 and the Ρ-type conductive copper foil 227 are electrically connected. The molding material 221 is a transparent plastic material, and the light emitted by the die 222 can be directly or reflected from the molding material 221 by H:\HU\LGC\A34276\103086\103086.doc Α34276 1〇3〇86 .1325640 The surface is worn out. The insulating layer 225 is disposed between the N-type conductive copper foil 224 and the p-type conductive copper foil 227. A material with good heat conduction can be selected as the insulating layer 225, for example, aluminum nitride (A1N) having a coefficient of ι 4 〇 230 230 (W/M · K ) or other materials of the same characteristics, because of the high thermal conductivity of aluminum nitride (compared with The iron 8 〇 2 W/M · K ) can quickly transfer the heat generated by the die 222 to the lower surface, and other ceramic materials of the same characteristics can be used instead of the aluminum nitride. In addition, the N-type conductive copper foil 224 and the P-type conductive copper foil 227 of the light-emitting diode element 22 are electrically connected by the solder 23 and the circuit layer 211, which is also the conductive path of the light-emitting diode module 20. The heat generated by the inner die 222 of the light-emitting diode τ is accelerated, and a heat sink 24 is fixed on the surface of the insulating layer 225 of the package substrate 226. The heat sink 24 passes through the corresponding through hole 213 of the module substrate 21, and is directly bonded by the solder 23 (or thermal paste) and the heat sink 25, so that the heat generated by the die 222 can pass through the heat sink 24 and the solder 23 It is directly transmitted to the heat dissipation plate 25, and utilizes a large surface area of the heat dissipation plate 25 to achieve rapid heat dissipation to the atmosphere. Since the paths of heat dissipation and conduction are not the same, the conductive path can be prevented from being affected by heat transfer, thereby increasing the stability of the illumination brightness of the light-emitting diode element 22.囷4 is an illustration of one of the application examples of the light-emitting diode module of the present invention. A light guide plate 41 is disposed on the same side of the light emitting diode element 22, and light emitted by the light emitting diode element 22 can be uniformized by the light guide plate 41. Thus, the light emitting diode module 40 can be used as a liquid crystal display. Backlight. As shown in FIG. 5, a plurality of lenses 51 may be disposed on the light emitting surface side of each of the light emitting diode elements 2, and the light emitting body module § 〇 can be used as a lighting H:\HU\LGCVA34276U〇3〇 WU〇3〇86.<|〇c •1325640 Set, for example: traffic light or car third light. The package substrate 226 of the light-emitting diode element 22' may be provided with an electrostatic discharge (ESD) control element 61 or a resistor as indicated by a circle. The electrostatic discharge preventing member 61 can prevent the static electricity from accumulating excessively and burn the circuit, and if it is a resistor, it can be used to modulate the impedance of the light emitting diode element 22. The light-emitting diode crystal grains (not shown) are still protected by the molding material 22 Γ. The technical content and technical features of the present invention have been disclosed as above, and those skilled in the art can still make various substitutions and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the present invention should be construed as being limited by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a display module of a conventional light-emitting diode display screen; FIG. 2 is a schematic view showing the appearance of a light-emitting diode module according to the present invention; 2 is a cross-sectional view of a section of the light-emitting diode module of the present invention; FIG. 5 is a schematic view of another embodiment of the light-emitting diode module of the present invention; FIG. 6 is a schematic view showing an application example of one of the flip-chip light-emitting diode elements of the present invention. [Main component symbol description] 11 LED component 20 LED module -9 · A34276 103086 10 Display module 12 Printed circuit board H:\HlAUXAA34276\l〇3〇86\l〇3〇86.d 〇c 1325640 21 Module substrate 11, 22' Light-emitting diode element 23 Solder 24 Heat sink 25 Heat sink 40 Light-emitting diode module 41 Light guide plate 50 Light-emitting diode module 51 Lens 61 Electrostatic discharge control element 110 Die 111 Package 112 Outer Pin 121 Metal Line 122 Substrate 211 Line Layer 212 Substrate 221, 221' Molding Material 222 Grain 223 Bump 224 N-Type Conductive Copper Foil 225 Insulation 226, 226' Package Substrate 227 P-type conductive copper foil H:\HU\LGCVA34276M 03086\103086.doc · 10 -