TWI538266B - Package structure of light emitting device and connection substrate thereof - Google Patents

Package structure of light emitting device and connection substrate thereof Download PDF

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TWI538266B
TWI538266B TW099112038A TW99112038A TWI538266B TW I538266 B TWI538266 B TW I538266B TW 099112038 A TW099112038 A TW 099112038A TW 99112038 A TW99112038 A TW 99112038A TW I538266 B TWI538266 B TW I538266B
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substrate
heat dissipation
hole
dissipation substrate
light emitting
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TW099112038A
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TW201138164A (en
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鄭惟綱
黃國欽
李芳儀
丁逸聖
潘錫明
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璨圓光電股份有限公司
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發光元件封裝結構與其連接基板Light-emitting element package structure and connection substrate thereof

本發明係關於一種發光元件封裝結構與其連接基板,尤指一種使用不同散熱基材組成的連接基板與其封裝結構。The present invention relates to a light emitting device package structure and a connecting substrate thereof, and more particularly to a connecting substrate composed of different heat dissipating substrates and a package structure thereof.

發光二極體晶片由於具有體積小、效率高、壽命長、反應時間快、演色度高、不含對環境有害的汞等優點,已經廣泛的運用於生活環境中。此外,全球各國政府禁用汞的環保政策,也驅使各廠商加緊投入白光發光二極體的研發與應用。在全球環保風潮方興未艾之際,發光二極體產業可說是最有潛力的產業之一。Light-emitting diode wafers have been widely used in living environments due to their small size, high efficiency, long life, fast reaction time, high color rendering, and no mercury harmful to the environment. In addition, the global government's ban on mercury environmental protection policies has also driven manufacturers to invest in the development and application of white light-emitting diodes. At a time when the global environmental protection trend is on the rise, the LED industry is one of the most promising industries.

然而,目前發光二極體晶片仍有大部分的輸入功率會轉換為熱,例如一般高功率發光二極體晶片之輸入功率大約僅有20%會轉換成光,其餘80%則轉變成為熱。若這些熱未能及時排出至外界,會使輕薄短小的發光二極體晶片晶粒界面溫度過高,而降低其發光效率及壽命。舉例來說,傳統式發光二極體晶片一般以藍寶石(sapphire)作為基板,其藍寶石的熱傳導係數約只有20W/mK,不易將磊晶層所產生的熱快速地排出。而習知的導線架(lead frame)型或是印刷電路板(printed circuit board,PCB)型的發光二極體晶片封裝結構,其封裝基板與封裝膠材均為塑膠或樹脂等導熱性不佳的材質,而發光二極體晶片於發光時會不斷產生熱能,因此在無法快速有效散熱的狀況下,累積的熱將使得發光二極體晶片的溫度升高,而影響發光二極體晶片的發光效率與使用壽命。However, at present, most of the input power of the LED chip is converted into heat. For example, only about 20% of the input power of a general high-power LED chip is converted into light, and the remaining 80% is converted into heat. If these heats are not discharged to the outside in time, the grain boundary temperature of the light and short light-emitting diode wafers is too high, and the luminous efficiency and life are lowered. For example, a conventional light-emitting diode wafer generally uses sapphire as a substrate, and its sapphire has a heat transfer coefficient of only about 20 W/mK, and it is difficult to quickly discharge heat generated by the epitaxial layer. The conventional lead frame type or printed circuit board (PCB) type LED package structure, the package substrate and the package material are both poor in thermal conductivity such as plastic or resin. The material of the light-emitting diode wafer continuously generates heat energy when it emits light. Therefore, in the case where the heat cannot be quickly and efficiently dissipated, the accumulated heat will increase the temperature of the light-emitting diode wafer and affect the light-emitting diode wafer. Luminous efficiency and service life.

本發明之目的之一在於提供一種發光元件封裝結構與其連接基板,以解決習知技術所面臨之限制與缺點。One of the objects of the present invention is to provide a light emitting device package structure and a connection substrate thereof to solve the limitations and disadvantages of the prior art.

本發明之一較佳實施例提供一種連接基板,用以承載一發光元件。上述發連接基板包括一第一散熱基材與一第二散熱基材。第一散熱基材至少具有一第一貫穿孔與一第二貫穿孔。第二散熱基材至少部分填充於第一散熱基材之第一貫穿孔以及第二貫穿孔中,且第一貫穿孔中的第二散熱基材與第二貫穿孔中的第二散熱基材彼此電性不相連,其中第一散熱基材與第二散熱基材之熱傳導係數係大於100W/mk,且第二散熱基材具有導電性。A preferred embodiment of the present invention provides a connection substrate for carrying a light-emitting element. The hair joining substrate comprises a first heat dissipating substrate and a second heat dissipating substrate. The first heat dissipation substrate has at least a first through hole and a second through hole. The second heat dissipation substrate is at least partially filled in the first through hole and the second through hole of the first heat dissipation substrate, and the second heat dissipation substrate in the first through hole and the second heat dissipation substrate in the second through hole They are electrically disconnected from each other, wherein the heat dissipation coefficient of the first heat dissipation substrate and the second heat dissipation substrate is greater than 100 W/mk, and the second heat dissipation substrate has electrical conductivity.

本發明之一較佳實施例另提供一種發光元件封裝結構,其包括上述之連接基板與一個或複數個發光元件。發光元件係設置於連接基板上,其中發光元件包括一負極與一正極,分別與第一貫穿孔與第二貫穿孔內之第二散熱基材電性連接。A preferred embodiment of the present invention further provides a light emitting device package structure including the above connecting substrate and one or more light emitting elements. The illuminating element is disposed on the connecting substrate, wherein the illuminating element comprises a negative electrode and a positive electrode, and is electrically connected to the second heat dissipating substrate in the first through hole and the second through hole, respectively.

本發明之發光元件封裝結構,利用由高熱傳導係數的第一散熱基材與第二散熱基材組成的連接基板,使連接基板上所承載的發光元件於發光時所產生的熱,可以直接經由連接基板向下方傳導散熱。另外,第二散熱基材係具有導電性,藉以將外部電源透過第二散熱基材傳送到發光元件。因此,本發明的導熱與導電設計,能有效提供最大熱傳導面積,提升其散熱效果。The light-emitting device package structure of the present invention utilizes a connection substrate composed of a first heat-dissipating substrate and a second heat-dissipating substrate having a high thermal conductivity, so that heat generated when the light-emitting element carried on the connection substrate is illuminated can be directly passed through The connection substrate conducts heat dissipation downward. In addition, the second heat dissipation substrate is electrically conductive, whereby the external power source is transmitted to the light emitting element through the second heat dissipation substrate. Therefore, the heat conduction and conduction design of the invention can effectively provide the maximum heat conduction area and improve the heat dissipation effect.

為使熟習本發明所屬技術領域之一般技藝者能更進一步了解本發明,下文特列舉本發明之數個較佳實施例,並配合所附圖式,詳細說明本發明的構成內容。需注意的是圖式僅以說明為目的,並未依照原尺寸作圖。另外,在說明書及後續的申請專利範圍當中使用了某些詞彙來指稱特定的元件。所屬領域中具有通常知識者應可理解,製作商可能會用不同的名詞來稱呼同樣的元件。本說明書及後續的申請專利範圍並不以名稱的差異來作為區別元件的方式,而是以元件在功能上的差異來作為區別的基準。在通篇說明書及後續的請求項當中所提及的「包括」係為一開放式的用語,故應解釋成「包括但不限定於」。The present invention will be described in detail with reference to the preferred embodiments of the invention, It should be noted that the drawings are for illustrative purposes only and are not drawn to the original dimensions. In addition, certain terms are used throughout the description and the appended claims to refer to particular elements. Those of ordinary skill in the art should understand that the manufacturer may refer to the same component by different nouns. The scope of this specification and the subsequent patent application do not use the difference of the names as the means for distinguishing the elements, but the differences in the functions of the elements as the basis for the distinction. The term "including" as used throughout the specification and subsequent claims is an open term and should be interpreted as "including but not limited to".

請參考第1圖,第1圖為本發明第一較佳實施例之發光元件封裝結構與其連接基板之示意圖。如第1圖所示,第一較佳實施例之發光元件封裝結構主要包括一連接基板10與一發光元件15。連接基板10係用來承載發光元件15,且連接基板10包括一第一散熱基材11與一第二散熱基材12。其中,第一散熱基材11與第二散熱基材12之熱傳導係數係大於100W/mk。在本較佳實施例中,發光元件15係為一發光二極體晶片,但不以此為限,而可以是其他有散熱需求的發光元件。因此,發光元件15於發光時所產生的熱可以直接經由連接基板10向下方傳導散熱,且由於第一散熱基材11與第二散熱基材12具有高熱傳導係數,因此可提升發光元件15的散熱效果。此外,如第1圖所示,第一散熱基材11至少具有一第一貫穿孔13與一第二貫穿孔14。其中,本較佳實施例之第一貫穿孔13與第二貫穿孔14係分別具有一垂直側壁,但本發明並不以此為限,例如可以是一傾斜側壁。另外,第二散熱基材12係至少部分填充於第一散熱基材11之第一貫穿孔13以及第二貫穿孔14中。例如在本較佳實施例中,第二散熱基材12係填滿第一貫穿孔13與第二貫穿孔14。但本發明並不以此為限,於其他實施態樣時,第二散熱基材12可以不必填滿第一貫穿孔13與第二貫穿孔14,只需部分填充於第一貫穿孔13與第二貫穿孔14中即可。並且,第一貫穿孔13中的第二散熱基材12與第二貫穿孔14中的第二散熱基材12彼此電性不相連。另外,第二散熱基材12係具有導電性,藉以將外部電源透過第二散熱基材12傳送到發光元件15。由於第二散熱基材12作為導電通道,其電導率(Electrical Conductivity)較佳係大於10-6Ω/cm。在本實施例中,第一散熱基材11可以是矽,而第二散熱基材12可以是具高熱傳導係數的金屬材料,例如銀或鋁等,但不以此為限。 Please refer to FIG. 1 , which is a schematic diagram of a light emitting device package structure and a connection substrate thereof according to a first preferred embodiment of the present invention. As shown in FIG. 1, the light emitting device package structure of the first preferred embodiment mainly includes a connection substrate 10 and a light emitting element 15. The connecting substrate 10 is used to carry the light emitting element 15 , and the connecting substrate 10 includes a first heat dissipating substrate 11 and a second heat dissipating substrate 12 . The heat dissipation coefficient of the first heat dissipation substrate 11 and the second heat dissipation substrate 12 is greater than 100 W/mk. In the preferred embodiment, the light-emitting element 15 is a light-emitting diode chip, but not limited thereto, and may be other light-emitting elements having heat dissipation requirements. Therefore, the heat generated by the light-emitting element 15 during light emission can directly conduct heat dissipation downward through the connection substrate 10, and since the first heat dissipation substrate 11 and the second heat dissipation substrate 12 have a high heat transfer coefficient, the light-emitting element 15 can be improved. heat radiation. In addition, as shown in FIG. 1 , the first heat dissipation substrate 11 has at least a first through hole 13 and a second through hole 14 . The first through hole 13 and the second through hole 14 of the preferred embodiment respectively have a vertical side wall, but the invention is not limited thereto, and may be, for example, a slanted side wall. In addition, the second heat dissipation substrate 12 is at least partially filled in the first through hole 13 and the second through hole 14 of the first heat dissipation substrate 11 . For example, in the preferred embodiment, the second heat dissipation substrate 12 fills the first through hole 13 and the second through hole 14. However, the present invention is not limited thereto. In other embodiments, the second heat dissipation substrate 12 does not need to fill the first through hole 13 and the second through hole 14 , and only needs to be partially filled in the first through hole 13 . The second through hole 14 is sufficient. Moreover, the second heat dissipation substrate 12 in the first through hole 13 and the second heat dissipation substrate 12 in the second through hole 14 are electrically disconnected from each other. Further, the second heat dissipation substrate 12 is electrically conductive, whereby the external power source is transmitted to the light-emitting element 15 through the second heat dissipation substrate 12. Since the second heat-dissipating substrate 12 serves as a conductive path, its electrical conductivity is preferably greater than 10 -6 Ω/cm. In this embodiment, the first heat dissipation substrate 11 may be a crucible, and the second heat dissipation substrate 12 may be a metal material having a high thermal conductivity, such as silver or aluminum, but not limited thereto.

本發明之發光元件封裝結構與其連接基板並不以上述實施例為限,而具有其它不同的實施樣態。為了簡化說明並易於比較,在下文之數個較佳實施例中,對於相同元件沿用相同的符號來表示。請參考第2圖,第2圖為本發明第二較佳實施例之發光元件封裝結構與其連接基板之示意圖。如第2圖所示,第二較佳實施例之發光元件封裝結構包括一連接基板10與一發光元件20,其中發光元件20係為一覆晶式發光二極體晶片(flip-chip LED)。以下僅針對與第一較佳實施例主要變化的部份進行說明,相同處不再贅述。第一個部份,第二較佳實施例之第二散熱基材12係直接位於發光元件20的下方。因此,在第二較佳實施例中,發光元件20透過第二散熱基材12的導電通路長度可以短於第一較佳實施例之導電通路長度,進而降低其電阻。第二個部份,第二較佳實施例之第一散熱基材11與第二散熱基材12之間另包括一絕緣層16。據此,在第一散熱基材具有導電性的情況下,絕緣層16可以用以電性隔絕第一散熱基材11與第二散熱基材12,避免第一貫穿孔13與第二貫穿孔14內的第二散熱基材12透過第一散熱基材11彼此電性連接。此外,本較佳實施例於第一散熱基材11中可以設置一靜電保護元件17。例如,在第二較佳實施例中,靜電保護元件17可以是一埋入式的齊納二極體(Zener diode),用以避免發光元件20因受到突波或是過大的電壓而損壞。但本發明之靜電保護元件17並不以此為限,而可以是其它具有抗突波功能的元件。值得注意的是,用以電性隔絕第一散熱基材11與第二散熱基材12的絕緣層16,或用以抗突波的靜電保護元件17,亦可視產品的需求而應用於第一較佳實施例或本發明其它的較佳實施例中,而不限於第二較佳實施例。The light-emitting device package structure and the connection substrate thereof of the present invention are not limited to the above embodiments, but have other different embodiments. In order to simplify the description and facilitate comparison, in the following preferred embodiments, the same elements are denoted by the same symbols. Please refer to FIG. 2, which is a schematic diagram of a light emitting device package structure and a connection substrate thereof according to a second preferred embodiment of the present invention. As shown in FIG. 2, the light-emitting device package structure of the second preferred embodiment includes a connection substrate 10 and a light-emitting element 20, wherein the light-emitting element 20 is a flip-chip LED. . The following is only a description of the main changes of the first preferred embodiment, and the same portions will not be described again. In the first portion, the second heat dissipating substrate 12 of the second preferred embodiment is directly under the light emitting element 20. Therefore, in the second preferred embodiment, the length of the conductive path of the light-emitting element 20 through the second heat-dissipating substrate 12 can be shorter than the length of the conductive path of the first preferred embodiment, thereby reducing the electrical resistance. In the second part, an insulating layer 16 is further included between the first heat dissipation substrate 11 and the second heat dissipation substrate 12 of the second preferred embodiment. Accordingly, in the case where the first heat dissipation substrate has electrical conductivity, the insulation layer 16 can electrically isolate the first heat dissipation substrate 11 and the second heat dissipation substrate 12 from the first through hole 13 and the second through hole. The second heat dissipation substrate 12 in the 14 is electrically connected to each other through the first heat dissipation substrate 11 . In addition, in the preferred embodiment, an electrostatic protection component 17 can be disposed in the first heat dissipation substrate 11. For example, in the second preferred embodiment, the electrostatic protection element 17 may be a buried Zener diode to prevent the light-emitting element 20 from being damaged by a surge or an excessive voltage. However, the electrostatic protection component 17 of the present invention is not limited thereto, and may be other components having an anti-surge function. It should be noted that the insulating layer 16 for electrically isolating the first heat-dissipating substrate 11 and the second heat-dissipating substrate 12, or the electrostatic protection element 17 for resisting the surge, may also be applied to the first product according to the requirements of the product. The preferred embodiment or other preferred embodiments of the invention are not limited to the second preferred embodiment.

值得注意的是,在第二較佳實施例中,絕緣層16的設置位置並不以第2圖為限。請參考第3圖,第3圖為本發明第二較佳實施例另一實施態樣之發光元件封裝結構與其連接基板之示意圖。如第3圖所示,絕緣層16可以不只設置於第一貫穿孔13與第二貫穿孔14之側壁,也可以設置於連接基板10的上表面與下表面。換言之,絕緣層16可以包覆第一散熱基材11。據此,絕緣層16不僅可用以電性隔離第一散熱基材11與第二散熱基材12,同時可用以電性隔離第一散熱基材11與發光元件20以及電性隔離第一散熱基材11與連接基板10下方的其他元件(圖未示)。It should be noted that in the second preferred embodiment, the position of the insulating layer 16 is not limited to the second drawing. Please refer to FIG. 3, which is a schematic diagram of a light emitting device package structure and a connection substrate thereof according to another embodiment of the second preferred embodiment of the present invention. As shown in FIG. 3, the insulating layer 16 may be provided not only on the side walls of the first through hole 13 and the second through hole 14, but also on the upper surface and the lower surface of the connection substrate 10. In other words, the insulating layer 16 may coat the first heat dissipation substrate 11 . Accordingly, the insulating layer 16 can be used to electrically isolate the first heat-dissipating substrate 11 from the second heat-dissipating substrate 12, and can electrically isolate the first heat-dissipating substrate 11 from the light-emitting element 20 and electrically isolate the first heat-dissipating base. The material 11 and other components (not shown) below the connection substrate 10.

請參考第4圖,第4圖為本發明第三較佳實施例之發光元件封裝結構與其連接基板之示意圖。如第4圖所示,第三較佳實施例之發光元件封裝結構包括一發光元件20與一連接基板10,且發光元件20係設置於連接基板10上。其中,發光元件20與第二較佳實施例相同,皆為一覆晶式發光二極體晶片。以下將配合圖式進一步說明發光元件20的結構。在第三較佳實施例中,發光元件20包括一負極21、一正極22、P型摻雜層23、主動層24、N型摻雜層25、與透明基板26,但不以此為限。此外,為了增加發光元件20的光取出效率,可進一步於N型摻雜層25的表面製作出微突起結構(圖未示)。再者,為了增加發光效率或考量其它因素,發光元件20另可包含有其它膜層(圖未示),例如注入層、傳輸層等常見之膜層。另外,發光元件20之負極21與第一貫穿孔13內之第二散熱基材12電性連接,而發光元件20之正極22與第二貫穿孔14內之第二散熱基材12電性連接。據此,外部電源可透過第一貫穿孔13與第二貫穿孔14內之第二散熱基材12,分別將預計提供給負極21與正極22的外部電源訊號傳送給發光元件20,以驅動發光元件20。在本較佳實施例中,發光元件20可以利用一交流電或一直流電驅動。藉由本較佳實施例之連接基板10具有第一散熱基材11與第二散熱基材12的設計,以及第二散熱基材12同時具有導電性的設計,可搭配覆晶式發光元件20,有效的將發光元件20的封裝尺寸縮小至3mm2以下,尤其可以進一步縮小至2mm2以下。相較之下,傳統型式的發光元件封裝結構,受限於封裝打線,使得傳統型式的封裝尺寸一般需要大於3mm2。因此,本較佳實施例之導熱與導電的設計,不但可使發光元件20整體垂直導熱而不受限於貫通導電通道,以達到最大的熱傳導面積,並且可以有效的縮小發光元件20的封裝尺寸。Please refer to FIG. 4, which is a schematic diagram of a light emitting device package structure and a connection substrate thereof according to a third preferred embodiment of the present invention. As shown in FIG. 4, the light emitting device package structure of the third preferred embodiment includes a light emitting device 20 and a connecting substrate 10, and the light emitting device 20 is disposed on the connecting substrate 10. The light-emitting element 20 is the same as the second preferred embodiment, and is a flip-chip light-emitting diode chip. The structure of the light-emitting element 20 will be further described below with reference to the drawings. In the third preferred embodiment, the light-emitting element 20 includes a negative electrode 21, a positive electrode 22, a P-type doped layer 23, an active layer 24, an N-type doped layer 25, and a transparent substrate 26, but is not limited thereto. . Further, in order to increase the light extraction efficiency of the light-emitting element 20, a micro-protrusion structure (not shown) may be further formed on the surface of the N-type doping layer 25. Furthermore, in order to increase the luminous efficiency or to consider other factors, the light-emitting element 20 may further comprise other film layers (not shown), such as a common film layer such as an injection layer or a transmission layer. In addition, the negative electrode 21 of the light-emitting element 20 is electrically connected to the second heat-dissipating substrate 12 in the first through-hole 13 , and the positive electrode 22 of the light-emitting element 20 is electrically connected to the second heat-dissipating substrate 12 in the second through-hole 14 . . Accordingly, the external power source can transmit the external power signal expected to be supplied to the negative electrode 21 and the positive electrode 22 to the light emitting element 20 through the first through hole 13 and the second heat dissipation substrate 12 in the second through hole 14, respectively, to drive the light. Element 20. In the preferred embodiment, the light-emitting element 20 can be driven by an alternating current or a direct current. The connection substrate 10 of the preferred embodiment has the design of the first heat dissipation substrate 11 and the second heat dissipation substrate 12, and the second heat dissipation substrate 12 has a conductivity design, and can be matched with the flip chip light-emitting element 20, The package size of the light-emitting element 20 is effectively reduced to 3 mm 2 or less, and in particular, it can be further reduced to 2 mm 2 or less. In contrast, the conventional type of light-emitting device package structure is limited by the package wire, so that the package size of the conventional type generally needs to be larger than 3 mm 2 . Therefore, the design of the heat conduction and the conduction of the preferred embodiment not only allows the light-emitting element 20 to be thermally conductive as a whole but is not limited to the through-conducting passage to achieve the maximum heat conduction area, and can effectively reduce the package size of the light-emitting element 20. .

請參考第5圖,第5圖為本發明第四較佳實施例之發光元件封裝結構與其連接基板之示意圖。如第5圖所示,第四較佳實施例之發光元件封裝結構包括兩個發光元件201與202以及一連接基板10,其中發光元件201與發光元件202彼此串聯相接。更明確的說,本較佳實施例係利用設置於連接基板10上表面之一圖案化導電層27,分別與發光元件201之正極22以及發光元件202之負極21電性連接,以達到串聯發光元件201與發光元件202的效果。另外,連接基板10之第一貫穿孔13內之第二散熱基材12電性連接至發光元件201之負極21,而連接基板10之第二貫穿孔14內之第二散熱基材12電性連接至發光元件202之正極22。再者,外部電源可透過第一貫穿孔13與第二貫穿孔14內之第二散熱基材12,分別將外部電源訊號提供給串聯的發光元件201與發光元件202。據此,本較佳實施例之發光元件封裝結構,利用連接基板10上的圖案化導電層27,搭配連接基板10之第一貫穿孔13與第二貫穿孔14內之第二散熱基材12,可輕易實現發光元件201與202的串聯,而不需要習知的封裝打線,也不需要額外的電路轉換器,進而達到縮小封裝尺寸與降低製作成本的功效。值得注意的是,為了簡化說明,本較佳實施例以兩個發光元件為例,但本發明並不此為限,而可以是三個以上的發光元件彼此串聯相接。另外,透過將複數個發光元件彼此串聯相接,可以使本發明發光元件封裝結構之發光元件操作於高電壓下。Please refer to FIG. 5, which is a schematic diagram of a light emitting device package structure and a connection substrate thereof according to a fourth preferred embodiment of the present invention. As shown in FIG. 5, the light-emitting element package structure of the fourth preferred embodiment includes two light-emitting elements 201 and 202 and a connection substrate 10, wherein the light-emitting elements 201 and the light-emitting elements 202 are connected in series with each other. More specifically, the preferred embodiment uses the patterned conductive layer 27 disposed on one of the upper surfaces of the connection substrate 10 to be electrically connected to the positive electrode 22 of the light-emitting element 201 and the negative electrode 21 of the light-emitting element 202, respectively, to achieve series illumination. The effect of the element 201 and the light-emitting element 202. In addition, the second heat dissipation substrate 12 in the first through hole 13 of the connection substrate 10 is electrically connected to the negative electrode 21 of the light emitting element 201, and the second heat dissipation substrate 12 in the second through hole 14 of the connection substrate 10 is electrically connected. Connected to the positive electrode 22 of the light emitting element 202. Furthermore, the external power source can transmit the external power signal to the series connected light-emitting element 201 and the light-emitting element 202 through the first through-hole 13 and the second heat-dissipating substrate 12 in the second through-hole 14 respectively. Accordingly, the light emitting device package structure of the preferred embodiment utilizes the patterned conductive layer 27 on the connection substrate 10 to match the first through hole 13 of the connection substrate 10 and the second heat dissipation substrate 12 in the second through hole 14. The series connection of the light-emitting elements 201 and 202 can be easily realized without the need of a conventional package wire or an additional circuit converter, thereby achieving the effect of reducing the package size and reducing the manufacturing cost. It should be noted that, in order to simplify the description, the preferred embodiment takes two light-emitting elements as an example, but the present invention is not limited thereto, and three or more light-emitting elements may be connected in series to each other. Further, by connecting a plurality of light-emitting elements in series with each other, the light-emitting element of the light-emitting element package structure of the present invention can be operated at a high voltage.

請參考第6圖,第6圖為本發明第五較佳實施例之發光元件封裝結構與其連接基板之示意圖。如第6圖所示,第五較佳實施例之發光元件封裝結構包括兩個發光元件201與202以及一連接基板10,其中兩個發光元件20係藉由連接基板10彼此串聯相接。更明確的說,在本較佳實施例中,發光元件201之負極21與第一散熱基材11之第一貫穿孔131內之第二散熱基材12電性連接,而發光元件201之正極22與第一散熱基材11之第二貫穿孔141內之第二散熱基材12電性連接;並且,發光元件202之負極21與第一散熱基材11之第一貫穿孔132內之第二散熱基材12電性連接,而發光元件202之正極22與連接基板10之第二貫穿孔142內之第二散熱基材12電性連接。再者,本較佳實施例另包括設置於連接基板10下表面的一圖案化導電層28,用以將第一散熱基材11之第二貫穿孔141內之第二散熱基材12以及第一貫穿孔132內之第二散熱基材12兩者電性連接。據此,本較佳實施例可以透過連接基板10,將發光元件201與發光元件202彼此串聯相接,而不需要習知的封裝打線,也不需要額外的電路轉換器,進而達到縮小封裝尺寸與降低製作成本的功效。同樣的,本發明並不僅限於兩個發光元件,而可以應用於三個以上的發光元件之串聯設計。Please refer to FIG. 6. FIG. 6 is a schematic diagram of a light emitting device package structure and a connection substrate thereof according to a fifth preferred embodiment of the present invention. As shown in FIG. 6, the light emitting device package structure of the fifth preferred embodiment includes two light emitting elements 201 and 202 and a connecting substrate 10, wherein the two light emitting elements 20 are connected to each other in series by the connecting substrate 10. More specifically, in the preferred embodiment, the negative electrode 21 of the light-emitting element 201 is electrically connected to the second heat-dissipating substrate 12 in the first through-hole 131 of the first heat-dissipating substrate 11, and the positive electrode of the light-emitting element 201 22 is electrically connected to the second heat dissipation substrate 12 in the second through hole 141 of the first heat dissipation substrate 11; and the first electrode 21 of the light emitting element 202 and the first through hole 132 of the first heat dissipation substrate 11 The second heat dissipating substrate 12 is electrically connected, and the positive electrode 22 of the light emitting element 202 is electrically connected to the second heat dissipating substrate 12 in the second through hole 142 of the connecting substrate 10 . In addition, the preferred embodiment further includes a patterned conductive layer 28 disposed on the lower surface of the connection substrate 10 for the second heat dissipation substrate 12 and the second through hole 141 of the first heat dissipation substrate 11 The second heat dissipating substrate 12 in the consistent perforation 132 is electrically connected. Accordingly, the preferred embodiment can connect the light-emitting element 201 and the light-emitting element 202 to each other in series through the connection substrate 10, without the need of a conventional package wire or an additional circuit converter, thereby reducing the package size. And reduce the cost of production. Also, the present invention is not limited to two light-emitting elements, but can be applied to a series design of three or more light-emitting elements.

請參考第7圖,第7圖為本發明第六較佳實施例之發光元件封裝結構與其連接基板之示意圖。如第7圖所示,第六較佳實施例之發光元件封裝結構包括一發光元件20與一連接基板10,且發光元件20係設置於連接基板10上,其中連接基板10之第一貫穿孔13與第二貫穿孔14分別具有一傾斜側壁。更明確的說,在本較佳實施例中,第一貫穿孔13與第二貫穿孔14之傾斜側壁可以具有兩種不同傾斜角度的傾斜側壁,使得第一貫穿孔13與第二貫穿孔14在第一散熱基材11表面之孔徑分別大於第一貫穿孔13與第二貫穿孔14在第一散熱基材11內部的孔徑,且第一貫穿孔13與第二貫穿孔14的孔徑係分別由第一散熱基材11的一表面向第一散熱基材11的內側漸縮。再者,第二散熱基材12係至少部分填充於第一散熱基材11之第一貫穿孔13以及第二貫穿孔14中。換言之,第六較佳實施例之第二散熱基材12並未填滿第一貫穿孔13以及第二貫穿孔14,而是僅填充於第一貫穿孔13以及第二貫穿孔14內靠近發光元件20的一側。但本發明並不以此為限,而可以視產品需求填充於第一貫穿孔13以及第二貫穿孔14內的其他部分。據此,本較佳實施例不但可以透過高熱傳導係數的第一散熱基材11與第二散熱基材12,將發光元件20發光時所產生的熱向下方傳導散熱,同時可以透過第一貫穿孔13以及第二貫穿孔14內具有導電性的第二散熱基材12,將外部電源提供給發光元件20。此外,本較佳實施例另包括一透鏡18,設置於發光元件20與連接基板10上,用以增加發光元件20的取光效率,進而提升發光元件20的發光效率。其中,透鏡18可以是一半球體形狀,但本發明並不以此為限,而可以是其他有助於提升取光效率的結構。另外,在傳統型式的發光元件封裝結構中,為了使透鏡與基板間的連接有足夠的物理強度,透鏡常需額外的卡榫式幾何結構,亦或是於基板上設計一用以固定透鏡的支架。但是,其支架形式會受限於 透鏡製程,造成亮度無法有效優化的缺點。相較之下,本較佳實施例之透鏡18無其他卡榫式幾何結構,僅具有複數個凸出部181,部分填入第一貫穿孔13與第二貫穿孔14內,使透鏡18的凸出部181得以卡住於第一貫穿孔13與第二貫穿孔14內,藉此固定透鏡18於連接基板10上。據此,本較佳實施例利用第一貫穿孔13以及第二貫穿孔14的設計,可以增加發光元件封裝結構內透鏡18與連接基板10間連接的物理強度,且使透鏡製程可調性增加,同時可以達到優化發光元件20之發光亮度的優點。 Please refer to FIG. 7. FIG. 7 is a schematic diagram of a light emitting device package structure and a connection substrate thereof according to a sixth preferred embodiment of the present invention. As shown in FIG. 7, the light emitting device package structure of the sixth preferred embodiment includes a light emitting device 20 and a connecting substrate 10, and the light emitting device 20 is disposed on the connecting substrate 10, wherein the first through hole of the connecting substrate 10 is connected. 13 and the second through hole 14 respectively have an inclined side wall. More specifically, in the preferred embodiment, the inclined sidewalls of the first through hole 13 and the second through hole 14 may have inclined sidewalls of two different inclination angles, such that the first through hole 13 and the second through hole 14 The apertures on the surface of the first heat dissipation substrate 11 are larger than the apertures of the first through hole 13 and the second through hole 14 in the first heat dissipation substrate 11 respectively, and the apertures of the first through hole 13 and the second through hole 14 are respectively The surface of the first heat dissipation substrate 11 is tapered toward the inner side of the first heat dissipation substrate 11. Furthermore, the second heat dissipation substrate 12 is at least partially filled in the first through hole 13 and the second through hole 14 of the first heat dissipation substrate 11 . In other words, the second heat dissipation substrate 12 of the sixth preferred embodiment does not fill the first through hole 13 and the second through hole 14 , but only fills the first through hole 13 and the second through hole 14 and emits light. One side of element 20. However, the present invention is not limited thereto, and may be filled in the first through hole 13 and other portions in the second through hole 14 depending on product requirements. Accordingly, the preferred embodiment can not only transmit the heat generated by the light-emitting element 20 when the first heat-dissipating substrate 11 and the second heat-dissipating substrate 12 are transmitted through the high heat-conducting coefficient, but also can transmit heat through the first pass. The second heat dissipation substrate 12 having conductivity in the through hole 13 and the second through hole 14 supplies an external power source to the light emitting element 20. In addition, the preferred embodiment further includes a lens 18 disposed on the light-emitting element 20 and the connection substrate 10 for increasing the light extraction efficiency of the light-emitting element 20, thereby improving the light-emitting efficiency of the light-emitting element 20. The lens 18 may be in the shape of a half sphere, but the invention is not limited thereto, and may be other structures that contribute to improving the light extraction efficiency. In addition, in the conventional type of light-emitting element package structure, in order to make the connection between the lens and the substrate have sufficient physical strength, the lens often requires an additional cassette geometry, or a lens is fixed on the substrate to fix the lens. support. However, the form of the stent will be limited by The lens process causes the disadvantage that the brightness cannot be effectively optimized. In contrast, the lens 18 of the preferred embodiment has no other card-like geometry, and has only a plurality of protrusions 181 partially filled into the first through holes 13 and the second through holes 14 to make the lens 18 The protruding portion 181 is caught in the first through hole 13 and the second through hole 14, whereby the lens 18 is fixed to the connection substrate 10. Accordingly, the preferred embodiment utilizes the design of the first through hole 13 and the second through hole 14 to increase the physical strength of the connection between the lens 18 and the connection substrate 10 in the light emitting device package structure, and to increase the lens process adjustability. At the same time, the advantage of optimizing the luminance of the light-emitting element 20 can be achieved.

綜上所述,本發明之發光元件封裝結構,利用由高熱傳導係數的第一散熱基材與第二散熱基材組成的連接基板,使連接基板上所承載的發光元件於發光時所產生的熱,可以直接經由連接基板向下方傳導散熱。另外,第二散熱基材係具有導電性,藉以將外部電源透過第二散熱基材傳送到發光元件。據此,本發明的導熱與導電設計,能有效提供最大熱傳導面積,提升其散熱效果。此外,本發明可搭配覆晶式發光元件,有效的將發光元件的封裝尺寸縮小。再者,複數個發光元件可以彼此串聯相接或藉由連接基板彼此串聯相接,而不需要習知的封裝打線,也不需要額外的電路轉換器,進而達到縮小封裝尺寸與降低製作成本的功效。另外,利用第一貫穿孔以及第二貫穿孔的設計,可以增加發光元件封裝結構內透鏡與連接基板間連接的物理強度,且增加透鏡製程的可調性,並有效優化發光元件之發光亮度。 In summary, the light-emitting device package structure of the present invention utilizes a connection substrate composed of a first heat-dissipating substrate and a second heat-dissipating substrate having a high thermal conductivity to cause a light-emitting element carried on the connection substrate to be emitted. Heat can conduct heat directly downward through the connection substrate. In addition, the second heat dissipation substrate is electrically conductive, whereby the external power source is transmitted to the light emitting element through the second heat dissipation substrate. Accordingly, the heat conduction and conduction design of the present invention can effectively provide the maximum heat conduction area and enhance the heat dissipation effect. In addition, the present invention can be combined with a flip-chip light-emitting element to effectively reduce the package size of the light-emitting element. Furthermore, the plurality of light-emitting elements can be connected in series with each other or in series with each other through the connection substrate, without the need for a conventional package wire, and no additional circuit converter is required, thereby achieving a reduction in package size and a reduction in manufacturing cost. efficacy. In addition, by using the design of the first through hole and the second through hole, the physical strength of the connection between the lens and the connection substrate in the light emitting element package structure can be increased, the adjustability of the lens process can be increased, and the light emission brightness of the light emitting element can be effectively optimized.

以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。 The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.

10‧‧‧連接基板 10‧‧‧Connecting substrate

11‧‧‧第一散熱基材 11‧‧‧First heat sink substrate

12‧‧‧第二散熱基材 12‧‧‧Second heat sink substrate

13‧‧‧第一貫穿孔 13‧‧‧First through hole

14‧‧‧第二貫穿孔 14‧‧‧Second through hole

15‧‧‧發光元件 15‧‧‧Lighting elements

16‧‧‧絕緣層 16‧‧‧Insulation

17‧‧‧靜電保護元件 17‧‧‧Electrostatic protection components

20‧‧‧發光元件 20‧‧‧Lighting elements

21‧‧‧負極 21‧‧‧negative

22‧‧‧正極 22‧‧‧ positive

23‧‧‧P型摻雜層 23‧‧‧P type doping layer

24‧‧‧主動層 24‧‧‧ active layer

25‧‧‧N型摻雜層 25‧‧‧N-doped layer

26‧‧‧透明基板 26‧‧‧Transparent substrate

201‧‧‧發光元件 201‧‧‧Lighting elements

202‧‧‧發光元件 202‧‧‧Lighting elements

27‧‧‧圖案化導電層 27‧‧‧ patterned conductive layer

28‧‧‧圖案化導電層 28‧‧‧ patterned conductive layer

131‧‧‧第一貫穿孔 131‧‧‧First through hole

132‧‧‧第一貫穿孔 132‧‧‧First through hole

141‧‧‧第二貫穿孔 141‧‧‧Second through hole

142‧‧‧第二貫穿孔 142‧‧‧Second through hole

18‧‧‧透鏡 18‧‧‧ lens

181‧‧‧凸出部 181‧‧‧Protruding

第1圖為本發明第一較佳實施例之發光元件封裝結構與其連接基板之示意圖。 FIG. 1 is a schematic view showing a light emitting device package structure and a connection substrate thereof according to a first preferred embodiment of the present invention.

第2圖為本發明第二較佳實施例之發光元件封裝結構與其連接基板之示意圖。 2 is a schematic view showing a light emitting device package structure and a connection substrate thereof according to a second preferred embodiment of the present invention.

第3圖為本發明第二較佳實施例另一實施態樣之發光元件封裝結構與其連接基板之示意圖。 FIG. 3 is a schematic view showing a light emitting device package structure and a connection substrate thereof according to another embodiment of the second preferred embodiment of the present invention.

第4圖為本發明第三較佳實施例之發光元件封裝結構與其連接基板之示意圖。 4 is a schematic view showing a light emitting device package structure and a connection substrate thereof according to a third preferred embodiment of the present invention.

第5圖為本發明第四較佳實施例之發光元件封裝結構與其連接基板之示意圖。 FIG. 5 is a schematic view showing a light emitting device package structure and a connection substrate thereof according to a fourth preferred embodiment of the present invention.

第6圖為本發明第五較佳實施例之發光元件封裝結構與其連接基板之示意圖。 Figure 6 is a schematic view showing a light-emitting device package structure and a connection substrate thereof according to a fifth preferred embodiment of the present invention.

第7圖為本發明第六較佳實施例之發光元件封裝結構與其連接基板之示意圖。 Figure 7 is a schematic view showing a light-emitting device package structure and a connection substrate thereof according to a sixth preferred embodiment of the present invention.

10‧‧‧連接基板 10‧‧‧Connecting substrate

11‧‧‧第一散熱基材 11‧‧‧First heat sink substrate

12‧‧‧第二散熱基材 12‧‧‧Second heat sink substrate

13‧‧‧第一貫穿孔 13‧‧‧First through hole

14‧‧‧第二貫穿孔 14‧‧‧Second through hole

20‧‧‧發光元件 20‧‧‧Lighting elements

18‧‧‧透鏡 18‧‧‧ lens

181‧‧‧凸出部 181‧‧‧Protruding

Claims (15)

一種連接基板,用以承載一發光元件,其連接基板包括:一第一散熱基材,至少具有一第一貫穿孔與一第二貫穿孔,該第一貫穿孔與該第二貫穿孔分別具有至少一傾斜側壁,使得該第一貫穿孔在該第一散熱基材表面的孔徑大於該第一貫穿孔在該第一散熱基材內部的孔徑尺寸,而該第二貫穿孔在該第一散熱基材表面的孔徑大於該第二貫穿孔在該第一散熱基材內部的孔徑尺寸,且該第一貫穿孔與該第二貫穿孔的孔徑係分別由該第一散熱基材的一表面向該第一散熱基材的內側漸縮;以及一第二散熱基材,至少部分填充於該第一散熱基材之該第一貫穿孔以及該第二貫穿孔中,且該第一貫穿孔中的該第二散熱基材與該第二貫穿孔中的該第二散熱基材彼此電性不相連,其中該第一散熱基材與該第二散熱基材之熱傳導係數係大於100W/mk,且該第二散熱基材具有導電性。 a connecting substrate for carrying a light-emitting component, the connecting substrate comprising: a first heat-dissipating substrate having at least a first through hole and a second through hole, wherein the first through hole and the second through hole respectively have At least one inclined sidewall, such that a diameter of the first through hole on the surface of the first heat dissipation substrate is larger than an aperture size of the first through hole in the first heat dissipation substrate, and the second through hole is in the first heat dissipation The aperture of the surface of the substrate is larger than the aperture of the second through hole in the first heat dissipation substrate, and the apertures of the first through hole and the second through hole are respectively from a surface of the first heat dissipation substrate. The inner surface of the first heat dissipation substrate is tapered; and a second heat dissipation substrate is at least partially filled in the first through hole and the second through hole of the first heat dissipation substrate, and the first through hole is The second heat dissipation substrate and the second heat dissipation substrate in the second through hole are electrically disconnected from each other, wherein the first heat dissipation substrate and the second heat dissipation substrate have a heat conduction coefficient greater than 100 W/mk. And the second heat dissipation substrate has electrical conductivity Sex. 如請求項1所述之連接基板,其中該第一散熱基材具有導電性,且該第一散熱基材與該第二散熱基材之間另包括一絕緣層,用以電性隔絕該第一散熱基材與該第二散熱基材。 The connection substrate of claim 1, wherein the first heat dissipation substrate has electrical conductivity, and the first heat dissipation substrate and the second heat dissipation substrate further comprise an insulation layer for electrically isolating the first a heat dissipating substrate and the second heat dissipating substrate. 如請求項1所述之連接基板,另包括一靜電保護元件,設置於該第一散熱基材中。 The connection substrate according to claim 1, further comprising an electrostatic protection component disposed in the first heat dissipation substrate. 如請求項3所述之連接基板,其中該靜電保護元件包括一齊納二極體(Zener diode)。 The connection substrate of claim 3, wherein the electrostatic protection element comprises a Zener diode. 如請求項1所述之連接基板,其中該第二散熱基材之電導率(Electrical Conductivity)係大於10-6Ω/cm。 The connection substrate according to claim 1, wherein the electrical conductivity of the second heat dissipation substrate is greater than 10 -6 Ω/cm. 一種發光元件封裝結構,包括:如請求項1至5之其中一項所述之連接基板;一個或複數個發光元件,設置於該連接基板上,其中該發光元件包括一負極與一正極,分別與該第一貫穿孔與該第二貫穿孔內之該第二散熱基材電性連接;以及一透鏡,設置於該發光元件與該連接基板上,且該透鏡具有複數個凸出部,部分填入該第一貫穿孔與該第二貫穿孔內,用以固定該透鏡。 A light-emitting device package structure, comprising: the connection substrate according to any one of claims 1 to 5; one or a plurality of light-emitting elements disposed on the connection substrate, wherein the light-emitting element comprises a negative electrode and a positive electrode, respectively The first through hole is electrically connected to the second heat dissipation substrate in the second through hole; and a lens is disposed on the light emitting element and the connection substrate, and the lens has a plurality of protrusions, and the portion The first through hole and the second through hole are filled in to fix the lens. 如請求項6所述之發光元件封裝結構,其中該發光元件係為一覆晶式發光二極體(flip chip LED)晶片。 The light emitting device package structure according to claim 6, wherein the light emitting device is a flip chip LED chip. 如請求項6所述之發光元件封裝結構,其中該發光元件係以一交流電或一直流電驅動。 The light emitting device package structure according to claim 6, wherein the light emitting element is driven by an alternating current or a direct current. 如請求項6所述之發光元件封裝結構,其中該等發光元件彼此串 聯相接。 The light emitting device package structure according to claim 6, wherein the light emitting elements are serially connected to each other Connected. 如請求項9所述之發光元件封裝結構,其中該等發光元件係藉由該連接基板彼此串聯相接。 The light emitting device package structure according to claim 9, wherein the light emitting elements are connected to each other in series by the connection substrate. 一種連接基板,用以承載一發光元件,其連接基板包括:一第一散熱基材,至少具有一第一貫穿孔與一第二貫穿孔,該第一貫穿孔與該第二貫穿孔分別具有至少一傾斜側壁,使得該第一貫穿孔在該第一散熱基材表面的孔徑不同於該第一貫穿孔在該第一散熱基材內部的孔徑尺寸,而該第二貫穿孔在該第一散熱基材表面的孔徑不同於該第二貫穿孔在該第一散熱基材內部的孔徑尺寸,其中該第一散熱基材具有導電性;一第二散熱基材,至少部分填充於該第一散熱基材之該第一貫穿孔以及該第二貫穿孔中,且該第一貫穿孔中的該第二散熱基材與該第二貫穿孔中的該第二散熱基材彼此電性不相連,其中該第一散熱基材與該第二散熱基材之熱傳導係數係大於100W/mk,且該第二散熱基材具有導電性;以及一絕緣層,設置於該第一散熱基材與該第二散熱基材之間,該絕緣層用以電性隔絕該第一散熱基材與該第二散熱基材。 a connecting substrate for carrying a light-emitting component, the connecting substrate comprising: a first heat-dissipating substrate having at least a first through hole and a second through hole, wherein the first through hole and the second through hole respectively have At least one inclined sidewall, such that a diameter of the first through hole on the surface of the first heat dissipation substrate is different from an aperture size of the first through hole inside the first heat dissipation substrate, and the second through hole is at the first The aperture of the surface of the heat dissipation substrate is different from the aperture size of the second through hole inside the first heat dissipation substrate, wherein the first heat dissipation substrate has electrical conductivity; and a second heat dissipation substrate is at least partially filled with the first The first through hole and the second through hole of the heat dissipation substrate, and the second heat dissipation substrate in the first through hole and the second heat dissipation substrate in the second through hole are electrically disconnected from each other The heat dissipation coefficient of the first heat dissipation substrate and the second heat dissipation substrate is greater than 100 W/mk, and the second heat dissipation substrate has electrical conductivity; and an insulation layer disposed on the first heat dissipation substrate and the Between the second heat dissipation substrate, the The insulating layer is used to electrically isolate the first heat dissipation substrate from the second heat dissipation substrate. 一種發光元件封裝結構,包括:如請求項11所述之連接基板;一個或複數個發光元件,設置於該連接基板上,其中該發光元件 包括一負極與一正極,分別與該第一貫穿孔與該第二貫穿孔內之該第二散熱基材電性連接;以及一透鏡,設置於該發光元件與該連接基板上,且該透鏡具有複數個凸出部,部分填入該第一貫穿孔與該第二貫穿孔內,用以固定該透鏡。 A light emitting device package structure comprising: the connection substrate according to claim 11; one or more light emitting elements disposed on the connection substrate, wherein the light emitting element The anode and the cathode are electrically connected to the first through hole and the second heat dissipation substrate in the second through hole respectively; and a lens is disposed on the light emitting element and the connecting substrate, and the lens is disposed on the connecting substrate And a plurality of protrusions partially filled into the first through hole and the second through hole for fixing the lens. 如請求項12所述之發光元件封裝結構,其中該發光元件係為一覆晶式發光二極體(flip chip LED)晶片。 The light emitting device package structure of claim 12, wherein the light emitting device is a flip chip LED chip. 如請求項12所述之發光元件封裝結構,其中該發光元件係以一交流電或一直流電驅動。 The light emitting device package structure of claim 12, wherein the light emitting element is driven by an alternating current or a direct current. 如請求項12所述之發光元件封裝結構,其中該等發光元件係藉由該連接基板彼此串聯相接。 The light emitting device package structure of claim 12, wherein the light emitting elements are connected to each other in series by the connection substrate.
TW099112038A 2010-04-16 2010-04-16 Package structure of light emitting device and connection substrate thereof TWI538266B (en)

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