KR101094132B1 - High power LED package - Google Patents

High power LED package Download PDF

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Publication number
KR101094132B1
KR101094132B1 KR1020090062525A KR20090062525A KR101094132B1 KR 101094132 B1 KR101094132 B1 KR 101094132B1 KR 1020090062525 A KR1020090062525 A KR 1020090062525A KR 20090062525 A KR20090062525 A KR 20090062525A KR 101094132 B1 KR101094132 B1 KR 101094132B1
Authority
KR
South Korea
Prior art keywords
metal base
led chip
plate
contact
led
Prior art date
Application number
KR1020090062525A
Other languages
Korean (ko)
Other versions
KR20110005033A (en
Inventor
한규진
Original Assignee
주식회사 코스텍시스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 코스텍시스 filed Critical 주식회사 코스텍시스
Priority to KR1020090062525A priority Critical patent/KR101094132B1/en
Publication of KR20110005033A publication Critical patent/KR20110005033A/en
Application granted granted Critical
Publication of KR101094132B1 publication Critical patent/KR101094132B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48111—Disposition the wire connector extending above another semiconductor or solid-state body

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  • Led Device Packages (AREA)

Abstract

The present invention forms a double reflecting plate to effectively reflect the light emitted from the LED chip to maximize the light divergence effect, when high heat is generated, the LED chip is heated by adjusting the thermal expansion coefficient between the heat sink and the LED chip The present invention relates to a high-power LED that can obtain excellent heat dissipation characteristics by preventing closure such as separation and damage in a sink or deterioration of heat dissipation effect.

As described above, the characteristics of the present invention, the contact 11 is formed at the upper portion and the connection terminal 12 is formed at the lower portion of the contact 11 and the connection terminal 12 is electrically connected to the insertion hole 13 in the center The insulating plate 10, the first reflecting plate 21, and the second reflecting plate 23 are separated into flat surfaces 22 to form a layer, and the contact surface 22a is formed on the flat surface 22. A metal base 20 having a mounting portion 24 formed by being enclosed by one reflection plate 21 is formed, and the lower portion of the mounting portion 24 of the metal base 20 is inserted into the insertion hole 13 of the insulating plate 10. The outside is sandwiched and joined, and the LED chip 30 is mounted inside the mounting portion 24 of the metal base 20, and the lead wire 31 of the LED chip 30 is the contact hole 22a of the metal base 20. It can be achieved by a high-power LED, characterized in that the electrical connection is configured to the contact 11 of the insulating plate 10 through.

 LED, PCB, Heat Sink

Description

High power LED package

The present invention relates to a high power light emitting diode (LED), more specifically, to form a double reflector to effectively reflect the light emitted from the LED chip to maximize the light emission effect, when high heat is generated, By controlling the coefficient of thermal expansion between the heat sink and the LED chip, the present invention relates to a high-power LED that can obtain excellent heat dissipation characteristics by preventing the chip chip from being disconnected and damaged from the heat sink or the heat dissipation effect.

In general, a light emitting diode (LED) is a semiconductor light emitting device that emits light when a current flows, and converts electrical energy into light energy using a PN junction diode made of GaAs and GaN optical semiconductors.

The range of light from these LEDs ranges from red (630 nm to 700 nm) to blue-violet (400 nm), including blue, green and white, and the LEDs consume less power and higher efficiency than conventional light sources such as incandescent bulbs and fluorescent lamps. The demand is continuously increasing because of the advantages such as long operating life.

Recently, the application range of LEDs is gradually expanding from small lighting of mobile terminals to indoor lighting, automotive lighting, and backlight for large liquid crystal display (LCD).

On the other hand, the power applied to the semiconductor device which is the light emitting source is increased in proportion to the intensity of light generated when the current is applied. Accordingly, the high power LED, which consumes a lot of power, is deteriorated and damaged by the heat generated during light emission. It is common to employ a heat dissipation structure so as to prevent that.

However, the conventional high power LED is manufactured by mounting the LED chip in the center of the insulator and installing the reflector at the periphery of the insulator. Therefore, there was a limit in designing a high power LED, and therefore, there was a problem in that the amount of light of the LED was limited.

The present invention has been made in view of the above problems, the object of which is to form a double reflector to effectively reflect the light emitted from the LED chip to maximize the light divergence effect, when high heat is generated, heat sink and LED By adjusting the coefficient of thermal expansion between the chips to provide a high-power LED to obtain excellent heat dissipation characteristics by preventing the LED chip is separated and damaged in the heat sink or the heat dissipation effect is reduced.

Features of the present invention for achieving the above object, the contact 11 is formed in the upper portion and the connection terminal 12 is formed in the lower contact 11 and the connection terminal 12 is electrically connected and inserted in the center The insulating plate 10 having the hole 13, the first reflecting plate 21, and the second reflecting plate 23 are separated into flat surfaces 22 to form a layer, and the flat surface 22 has contact holes 22a. Is formed and the metal base 20 having the mounting portion 24 formed by being enclosed and enclosed by the first reflecting plate 21 is formed, and the mounting portion of the metal base 20 in the insertion hole 13 of the insulating plate 10. (24) The lower outer side is sandwiched and joined, and the LED chip 30 is mounted inside the mounting portion 24 of the metal base 20, and the lead wire 31 of the LED chip 30 contacts the metal base 20. It can be achieved by a high-power LED, characterized in that it is electrically connected to the contact 11 of the insulating plate 10 through the hole (22a).

The present invention as described above is composed of two stages of the first and second reflector plates 21 and 23 to effectively reflect the light emitted from the LED chip 30 to maximize the light divergence effect, generating high heat When high heat is generated in the LED chip 30, the first and second heat dissipation plates 41 and 42 are laminated between the heat sink 40 and the LED chip 30 to have a coefficient of thermal expansion similar to that of the LED chip 30. In other words, the LED chip 30 is a useful invention which has various effects such as preventing and preventing the end of the heat sink 40 from being separated and damaged or the heat dissipation effect is reduced, thereby having excellent heat dissipation characteristics.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

As shown in FIGS. 1 to 3, the present invention forms a contact 11 at an upper portion and a connection terminal 12 at a lower portion thereof to electrically connect the contact 11 and the connection terminal 12. In addition, the insulating plate 10 is formed by drilling an insertion hole 13 in the center of the contact 11 and the contact 11.

The insulating plate 10 is composed of a printed circuit board (PCB) or ceramic.

Then, the first reflecting plate 21 and the second reflecting plate 23 for separating the light source of the mounted LED chip 30 effectively up and down by the flat surface 22, and the flat surface 22 The contact hole 22a for electrically connecting the lead wire 31 of the LED chip 30 to the contact 11 of the insulating plate 10 is formed, and is enclosed and recessed in the first reflecting plate 21. The metal base 20 in which the mounting part 24 was formed is comprised.

The lower portion of the mounting portion 24 of the metal base 20 is inserted into the insertion hole 13 of the insulating plate 10.

Here, the bonding between the insulating plate 10 and the metal base 20 is performed using an epoxy resin or the like.

As described above, the metal base 20 is bonded to the insulating plate 10 by bonding the metal base 20 to the insulating plate 10 having a plurality of contacts 11 and insertion holes 13 formed therein, and then each metal base ( 20 may be used to cut the insulating plate 10 is coupled, or may be used in a state in which a plurality of metal base 20 is bonded.

The metal base 20 is made of copper (Cu) or aluminum (Al).

The LED chip 30 is mounted on the mounting portion 24 of the metal base 20.

The lead wire 31 of the LED chip 30 is electrically connected to the contact 11 of the insulating plate 10 through the contact hole 22a drilled in the metal base 20.

As such, the light emitted from the LED chip 30 is reflected through the first and second reflecting plates 21 and 23 by forming the first and second reflecting plates 21 and 23 on the metal base 20 in two stages. To maximize the reflection efficiency.

Meanwhile, a heat sink 40 for dissipating heat generated by the LED chip 30 may be bonded to a lower portion of the mounting portion 24 of the metal base 20 and a portion of the bottom surface of the insulating plate 10.

Also, between the mounting portion 24 and the LED chip 30 of the metal base 20, a first heat radiating plate 41 or a second heat radiating plate 42 having a similar thermal expansion coefficient to the LED chip 30 may be formed. The first and second heat radiating plates 41 and 42 may be configured at the same time.

The metal base 20 and the first heat dissipation plate 41, the metal base 20 and the second heat dissipation plate 42, or the metal base 20 and the first and second heat dissipation plates 41 and 42 are copper. Brazing is performed by alloy (AgCu).

The first heat radiating plate 0 is made of copper (Cu) or aluminum (Al).

The second heat dissipation plate 31 is composed of one of molybdenum (Mo), molybdenum and copper alloy (MoCu), or copper and tungsten alloy (CuW).

The copper and molybdenum alloy (MoCu) is 10 to 70% by weight of copper (Cu), the molybdenum (Mo) 30 to 90% by weight, and the copper and tungsten alloy is 10 to 70% by weight of copper (Cu), and the tungsten (W) 30 to It is preferable to alloy at 90 weight%.

As described above, the first and second heat radiating plates 41 and 42 are formed to be similar to the thermal expansion coefficient of the LED chip 40 by joining the first and second heat radiating plates 41 and 42. The first and second heat dissipation plates 41 and 42 are absorbed and released by the first and second heat dissipation plates 41 and 42, and the heat sink 40 emits the remaining heat.

The present invention having such a configuration prevents the occurrence of stress by configuring the first and second heat dissipation plates 41 and 42 made of a similar material to the LED chip 30 even if high heat is generated in the LED chip 30. On the other hand, separation of the heat sink 40 and the LED chip 30 is prevented, and the heat dissipation effect is high.

Although the preferred embodiments of the present invention have been illustrated and described above, the present invention is not limited to the above-described embodiments, and the present invention is not limited to the above-described embodiments without departing from the spirit of the present invention as claimed in the claims. Various modifications can be made by those skilled in the art, and such modifications are intended to fall within the scope of the appended claims.

1 is a perspective view illustrating an embodiment of the present invention

Figure 2 is an exploded perspective view illustrating an embodiment of the present invention

3 is a cross-sectional view illustrating an embodiment of the present invention.

4 is a cross-sectional view illustrating another embodiment of the present invention.

5 is a cross-sectional view illustrating another embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

10: insulation plate 11: contact

12: connecting terminal 13: insertion hole

20: methyl base 21: first reflector

22: flat surface 22a: contact hole

23: second reflector 24: mounting part

30: LED chip 31: lead wire

40: heat sink 41: first heat release plate

42: second heat release plate

Claims (4)

An insulating plate 10 having a contact 11 formed at an upper portion thereof, and a connecting terminal 12 formed at a lower portion thereof, so that the contact 11 and the connecting terminal 12 are electrically connected, and an insertion hole 13 formed at the center thereof. The first reflecting plate 21 and the second reflecting plate 23 are separated into flat surfaces 22 to form a layer, and the contact surface 22a is formed in the flat surface 22 and surrounded by the first reflecting plate 21 to be recessed. A metal base 20 having a mounting portion 24 formed thereon is formed, and the lower outer side of the mounting portion 24 of the metal base 20 is joined to the insertion hole 13 of the insulating plate 10 to join the metal base ( The LED chip 30 is mounted inside the mounting portion 24 of the 20, and the lead wire 31 of the LED chip 30 contacts the contacts of the insulating plate 10 through the contact holes 22a of the metal base 20. High power LED, characterized in that the electrical connection is configured in 11). The method of claim 1, The insulating plate 10 is configured by selecting any one of a PCB (printed circuit board) or ceramic, and the metal base 20 is configured by selecting any one of copper (Cu) or aluminum (Al). High power LED, characterized in that. The method of claim 1, A high output characterized in that the heat sink 40 for dissipating heat generated from the LED chip 30 is bonded to the lower portion of the mounting portion 24 and the insulating plate 10 of the metal base 20 LED. The method of claim 1, Between the mounting part 24 of the metal base 20 and the LED chip 30, a first heat radiating plate 41 or a second heat radiating plate 42 having a similar thermal expansion coefficient to the LED chip 30 is formed, or 1, 2 heat-dissipating plates 41, 42 are configured simultaneously, The first heat dissipation plate 41 is configured by selecting any one of copper (Cu) or aluminum (Al), and the second heat dissipation plate 42 is 10 to 70 wt% of molybdenum (Mo) and copper (Cu). And an alloy (MoCu) consisting of 30 to 90% by weight of molybdenum (Mo), an alloy (CuW) consisting of 10 to 70% by weight of copper (Cu) and 30 to 90% by weight of tungsten (W). High power LED, characterized in that.
KR1020090062525A 2009-07-09 2009-07-09 High power LED package KR101094132B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020090062525A KR101094132B1 (en) 2009-07-09 2009-07-09 High power LED package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090062525A KR101094132B1 (en) 2009-07-09 2009-07-09 High power LED package

Publications (2)

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KR20110005033A KR20110005033A (en) 2011-01-17
KR101094132B1 true KR101094132B1 (en) 2011-12-14

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016167625A3 (en) * 2015-04-16 2016-12-29 주식회사 엘리텍 Metal printed circuit board, method for manufacturing same, led package structure, and method for manufacturing same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101249071B1 (en) * 2011-09-26 2013-04-01 주식회사 루멘스 Light emitting device package assembly and backlight unit comprising the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100613065B1 (en) 2004-05-21 2006-08-16 서울반도체 주식회사 Light-emitting diode package using high thermal conductive reflector and manufacturing method of the same
KR100613064B1 (en) 2004-05-21 2006-08-16 서울반도체 주식회사 Light-emitting diode package
KR100805822B1 (en) 2006-08-10 2008-02-21 주식회사 티투엘 Light emitting diode package
KR100867568B1 (en) 2007-05-18 2008-11-10 서울반도체 주식회사 Heat radiation type led package

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100613065B1 (en) 2004-05-21 2006-08-16 서울반도체 주식회사 Light-emitting diode package using high thermal conductive reflector and manufacturing method of the same
KR100613064B1 (en) 2004-05-21 2006-08-16 서울반도체 주식회사 Light-emitting diode package
KR100805822B1 (en) 2006-08-10 2008-02-21 주식회사 티투엘 Light emitting diode package
KR100867568B1 (en) 2007-05-18 2008-11-10 서울반도체 주식회사 Heat radiation type led package

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016167625A3 (en) * 2015-04-16 2016-12-29 주식회사 엘리텍 Metal printed circuit board, method for manufacturing same, led package structure, and method for manufacturing same

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