KR101094132B1 - High output LED - Google Patents

High output LED Download PDF

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KR101094132B1
KR101094132B1 KR1020090062525A KR20090062525A KR101094132B1 KR 101094132 B1 KR101094132 B1 KR 101094132B1 KR 1020090062525 A KR1020090062525 A KR 1020090062525A KR 20090062525 A KR20090062525 A KR 20090062525A KR 101094132 B1 KR101094132 B1 KR 101094132B1
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South Korea
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metal base
led chip
plate
led
contact
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KR1020090062525A
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Korean (ko)
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KR20110005033A (en
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한규진
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주식회사 코스텍시스
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48111—Disposition the wire connector extending above another semiconductor or solid-state body

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Abstract

본 발명은 LED 칩에서 발산하는 빛을 효과적으로 반사시키기 위하여 2중의 반사판을 형성하여 빛 발산효과를 극대화시키며, 고열이 발생될 때, 히트싱크와 LED 칩 사이에 열팽창계수의 조절을 통하여 LED 칩이 히트싱크에서 분리 및 손상되거나 열 방출효과가 저하되는 등의 폐단을 방지하여 우수한 방열 특성을 얻을 수 있도록 한 고출력 LED에 관한 것이다.The present invention forms a double reflecting plate to effectively reflect the light emitted from the LED chip to maximize the light divergence effect, when high heat is generated, the LED chip is heated by adjusting the thermal expansion coefficient between the heat sink and the LED chip The present invention relates to a high-power LED that can obtain excellent heat dissipation characteristics by preventing closure such as separation and damage in a sink or deterioration of heat dissipation effect.

전술한, 본 발명의 특징은, 상부에 접점(11)이 형성되고 하부에 연결단자(12)가 형성되어 접점(11)과 연결단자(12)가 전기적으로 연결되며 중앙에는 삽입공(13)이 형성된 절연판(10)과, 제1반사판(21)과 제2반사판(23)이 평탄면(22)으로 분리되어 층을 이루며 형성되고 평탄면(22)에는 접점공(22a)이 형성되며 제1반사판(21)으로 둘러싸여 요입되어 구성되는 실장부(24)를 갖는 메탈베이스(20)가 형성되어, 절연판(10)의 삽입공(13)에 메탈베이스(20)의 실장부(24) 하부 외측이 끼워져 접합되며, 메탈베이스(20)의 실장부(24) 내측에는 LED 칩(30)이 실장되고, LED 칩(30)의 리드선(31)이 메탈베이스(20)의 접점공(22a)을 통하여 절연판(10)의 접점(11)에 전기적으로 결선되어 구성됨을 특징으로 하는 고출력 LED에 의하여 달성될 수 있는 것이다.As described above, the characteristics of the present invention, the contact 11 is formed at the upper portion and the connection terminal 12 is formed at the lower portion of the contact 11 and the connection terminal 12 is electrically connected to the insertion hole 13 in the center The insulating plate 10, the first reflecting plate 21, and the second reflecting plate 23 are separated into flat surfaces 22 to form a layer, and the contact surface 22a is formed on the flat surface 22. A metal base 20 having a mounting portion 24 formed by being enclosed by one reflection plate 21 is formed, and the lower portion of the mounting portion 24 of the metal base 20 is inserted into the insertion hole 13 of the insulating plate 10. The outside is sandwiched and joined, and the LED chip 30 is mounted inside the mounting portion 24 of the metal base 20, and the lead wire 31 of the LED chip 30 is the contact hole 22a of the metal base 20. It can be achieved by a high-power LED, characterized in that the electrical connection is configured to the contact 11 of the insulating plate 10 through.

LED, PCB, 히트싱크  LED, PCB, Heat Sink

Description

고출력 엘이디{High power LED package}High power LED package

본 발명은 고출력 LED(High Power Light Emitting Diode)에 관한 것으로서, 더욱 구체적으로는 LED 칩에서 발산하는 빛을 효과적으로 반사시키기 위하여 2중의 반사판을 형성하여 빛 발산효과를 극대화시키며, 고열이 발생될 때, 히트싱크와 LED 칩 사이에 열팽창계수의 조절을 통하여 LED 칩이 히트싱크에서 분리 및 손상되거나 열 방출효과가 저하되는 등의 폐단을 방지하여 우수한 방열 특성을 얻을 수 있도록 한 고출력 LED에 관한 것이다.The present invention relates to a high power light emitting diode (LED), more specifically, to form a double reflector to effectively reflect the light emitted from the LED chip to maximize the light emission effect, when high heat is generated, By controlling the coefficient of thermal expansion between the heat sink and the LED chip, the present invention relates to a high-power LED that can obtain excellent heat dissipation characteristics by preventing the chip chip from being disconnected and damaged from the heat sink or the heat dissipation effect.

일반적으로 발광 다이오드(LED: Light Emitting Diode)는 전류가 흐를 때 빛을 내는 반도체 발광소자이며, GaAs, GaN 광반도체로 이루어진 PN 접합 다이오드(junction diode)로 전기에너지를 빛에너지로 바꾸어 주는 것이다.In general, a light emitting diode (LED) is a semiconductor light emitting device that emits light when a current flows, and converts electrical energy into light energy using a PN junction diode made of GaAs and GaN optical semiconductors.

이러한 LED로부터 나오는 빛의 영역은 레드(630nm~700nm)로부터 블루-Violet(400nm)까지로 블루, 그린 및 화이트까지도 포함하고 있으며, 상기 LED는 백열전구와 형광등과 같은 기존의 광원에 비해 저전력소비, 고효율, 장시간 동작 수명 등의 장점을 가지고 있어 그 수요가 지속적으로 증가하고 있는 실정이다.The range of light from these LEDs ranges from red (630 nm to 700 nm) to blue-violet (400 nm), including blue, green and white, and the LEDs consume less power and higher efficiency than conventional light sources such as incandescent bulbs and fluorescent lamps. The demand is continuously increasing because of the advantages such as long operating life.

최근에 LED는 모바일 단말기의 소형조명에서 실내외의 일반조명, 자동차 조명, 대형 LCD(Liquid Crystal Display)용 백라이트(Backlight)로 그 적용범위가 점차 확대되고 있다.Recently, the application range of LEDs is gradually expanding from small lighting of mobile terminals to indoor lighting, automotive lighting, and backlight for large liquid crystal display (LCD).

한편, 전류인가 시 발생되는 빛의 세기에 비례하여 발광원인 반도체소자에 인가되는 전력은 증가되는데, 이에 따라 전력소모가 많은 고출력 LED에는 발광 시 발생되는 열에 의해 반도체 소자 및 패키지자체가 열화되어 손상되는 것을 방지할 수 있도록 방열 구조를 채용하는 것이 일반적이다.On the other hand, the power applied to the semiconductor device which is the light emitting source is increased in proportion to the intensity of light generated when the current is applied. Accordingly, the high power LED, which consumes a lot of power, is deteriorated and damaged by the heat generated during light emission. It is common to employ a heat dissipation structure so as to prevent that.

그러나 종래 고출력 LED는 절연체의 중앙에 LED 칩을 실장시키고 절연체의 주연에 반사판을 설치하는 구성으로 제작되고 있으나, 실제 발열이 심한 부품은 LED 칩인데 반해, 이 LED 칩에 대한 방열 대책이 제대로 이루어지지 않아, 고출력의 LED를 설계하는데 한계가 있었으며, 따라서, LED의 광량이 제한적인 문제점이 있었다. However, the conventional high power LED is manufactured by mounting the LED chip in the center of the insulator and installing the reflector at the periphery of the insulator. Therefore, there was a limit in designing a high power LED, and therefore, there was a problem in that the amount of light of the LED was limited.

본 발명은 상기한 문제점을 감안하여 창안한 것으로서, 그 목적은 LED 칩에서 발산하는 빛을 효과적으로 반사시키기 위하여 2중의 반사판을 형성하여 빛 발산효과를 극대화시키며, 고열이 발생될 때, 히트싱크와 LED 칩 사이에 열팽창계수의 조절을 통하여 LED 칩이 히트싱크에서 분리 및 손상되거나 열 방출효과가 저하되는 등의 폐단을 방지하여 우수한 방열 특성을 얻을 수 있도록 한 고출력 LED를 제공함에 있는 것이다.The present invention has been made in view of the above problems, the object of which is to form a double reflector to effectively reflect the light emitted from the LED chip to maximize the light divergence effect, when high heat is generated, heat sink and LED By adjusting the coefficient of thermal expansion between the chips to provide a high-power LED to obtain excellent heat dissipation characteristics by preventing the LED chip is separated and damaged in the heat sink or the heat dissipation effect is reduced.

상기한 목적을 달성하기 위한 본 발명의 특징은, 상부에 접점(11)이 형성되고 하부에 연결단자(12)가 형성되어 접점(11)과 연결단자(12)가 전기적으로 연결되며 중앙에는 삽입공(13)이 형성된 절연판(10)과, 제1반사판(21)과 제2반사판(23)이 평탄면(22)으로 분리되어 층을 이루며 형성되고 평탄면(22)에는 접점공(22a)이 형성되며 제1반사판(21)으로 둘러싸여 요입되어 구성되는 실장부(24)를 갖는 메탈베이스(20)가 형성되어, 절연판(10)의 삽입공(13)에 메탈베이스(20)의 실장부(24) 하부 외측이 끼워져 접합되며, 메탈베이스(20)의 실장부(24) 내측에는 LED 칩(30)이 실장되고, LED 칩(30)의 리드선(31)이 메탈베이스(20)의 접점공(22a)을 통하여 절연판(10)의 접점(11)에 전기적으로 결선되어 구성됨을 특징으로 하는 고출력 LED에 의하여 달성될 수 있는 것이다.Features of the present invention for achieving the above object, the contact 11 is formed in the upper portion and the connection terminal 12 is formed in the lower contact 11 and the connection terminal 12 is electrically connected and inserted in the center The insulating plate 10 having the hole 13, the first reflecting plate 21, and the second reflecting plate 23 are separated into flat surfaces 22 to form a layer, and the flat surface 22 has contact holes 22a. Is formed and the metal base 20 having the mounting portion 24 formed by being enclosed and enclosed by the first reflecting plate 21 is formed, and the mounting portion of the metal base 20 in the insertion hole 13 of the insulating plate 10. (24) The lower outer side is sandwiched and joined, and the LED chip 30 is mounted inside the mounting portion 24 of the metal base 20, and the lead wire 31 of the LED chip 30 contacts the metal base 20. It can be achieved by a high-power LED, characterized in that it is electrically connected to the contact 11 of the insulating plate 10 through the hole (22a).

이상에서 상술한 바와 같은 본 발명은, 2단의 제1, 2반사판(21)(23)으로 구성하여 LED 칩(30)에서 발산하는 빛을 효과적으로 반사시켜 빛 발산효과를 극대화시키며, 고열을 발생시키는 LED 칩(30)에서 고열이 발생될 때, 히트싱크(40)와 LED 칩(30) 사이에 LED 칩(30)과 유사한 열팽창계수을 갖게 제1, 2열방출판(41)(42)을 적층시키어 LED 칩(30)이 히트싱크(40)에서 분리 및 손상되거나 열 방출효과가 저하되는 등의 폐단을 방지하고, 그로 인하여 우수한 방열 특성을 갖는 등의 여러 효과가 있는 유용한 발명인 것이다.The present invention as described above is composed of two stages of the first and second reflector plates 21 and 23 to effectively reflect the light emitted from the LED chip 30 to maximize the light divergence effect, generating high heat When high heat is generated in the LED chip 30, the first and second heat dissipation plates 41 and 42 are laminated between the heat sink 40 and the LED chip 30 to have a coefficient of thermal expansion similar to that of the LED chip 30. In other words, the LED chip 30 is a useful invention which has various effects such as preventing and preventing the end of the heat sink 40 from being separated and damaged or the heat dissipation effect is reduced, thereby having excellent heat dissipation characteristics.

이하, 상기한 목적을 달성하기 위한 바람직한 실시예를 첨부된 도면에 의하여 상세히 설명하면 다음과 같다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 1 내지는 도 3에서 도시한 바와 같이, 본 발명은 상부에는 접점(11)을 형성하고, 하부에는 연결단자(12)를 형성하여, 상기 접점(11)과 연결단자(12)를 전기적으로 연결시키고, 상기 접점(11)과 접점(11)들의 중앙에는 삽입공(13)을 천공하여 절연판(10)을 구성한다.As shown in FIGS. 1 to 3, the present invention forms a contact 11 at an upper portion and a connection terminal 12 at a lower portion thereof to electrically connect the contact 11 and the connection terminal 12. In addition, the insulating plate 10 is formed by drilling an insertion hole 13 in the center of the contact 11 and the contact 11.

상기 절연판(10)은 PCB(인쇄회로기판 : printed circuit board) 또는 세라믹으로 구성한다.The insulating plate 10 is composed of a printed circuit board (PCB) or ceramic.

그리고 탑재되는 LED 칩(30)의 광원을 효과적으로 발산하기 위한 제1반사 판(21)과 제2반사판(23)을 평탄면(22)에 의해 상하로 분리구성하고, 상기 평탄면(22)에는 LED 칩(30)의 리드선(31)을 상기 절연판(10)의 접점(11)에 전기적으로 연결하기 위한 접점공(22a)을 형성하며, 상기 제1반사판(21)으로 둘러싸이고 요입되어 구성되는 실장부(24)를 형성한 메탈베이스(20)를 구성한다.Then, the first reflecting plate 21 and the second reflecting plate 23 for separating the light source of the mounted LED chip 30 effectively up and down by the flat surface 22, and the flat surface 22 The contact hole 22a for electrically connecting the lead wire 31 of the LED chip 30 to the contact 11 of the insulating plate 10 is formed, and is enclosed and recessed in the first reflecting plate 21. The metal base 20 in which the mounting part 24 was formed is comprised.

상기 절연판(10)의 삽입공(13)에 상기 메탈베이스(20)의 실장부(24) 하부 외측을 끼워 구성한다.The lower portion of the mounting portion 24 of the metal base 20 is inserted into the insertion hole 13 of the insulating plate 10.

여기서 상기 절연판(10)과 메탈베이스(20)의 접합은 에폭시수지(epoxy resin) 등을 이용하여 접합한다.Here, the bonding between the insulating plate 10 and the metal base 20 is performed using an epoxy resin or the like.

그리고 상기와 같이 절연판(10)에 메탈베이스(20)의 접합은 접점(11)과 삽입공(13)이 다수 개 형성된 절연판(10)에 메탈베이스(20)를 각각 접합한 후 각 메탈베이스(20)가 결합된 절연판(10)을 절단하여 사용하거나, 여러 개의 메탈베이스(20)가 접합된 상태로 사용할 수도 있는 것이다.As described above, the metal base 20 is bonded to the insulating plate 10 by bonding the metal base 20 to the insulating plate 10 having a plurality of contacts 11 and insertion holes 13 formed therein, and then each metal base ( 20 may be used to cut the insulating plate 10 is coupled, or may be used in a state in which a plurality of metal base 20 is bonded.

상기 메탈베이스(20)는 구리(Cu) 또는 알루미늄(Al)으로 구성한다.The metal base 20 is made of copper (Cu) or aluminum (Al).

상기 메탈베이스(20)의 실장부(24)에는 LED 칩(30)을 실장하여 구성한다.The LED chip 30 is mounted on the mounting portion 24 of the metal base 20.

상기 LED 칩(30)의 리드선(31)은 메탈베이스(20)에 천공된 접점공(22a)을 통하여 절연판(10)의 접점(11)에 전기적으로 결선하여 구성한다.The lead wire 31 of the LED chip 30 is electrically connected to the contact 11 of the insulating plate 10 through the contact hole 22a drilled in the metal base 20.

이와 같이 메탈베이스(20)에 제1, 2반사판(21)(23)을 이단으로 구성하여 LED 칩(30)에서 발산하는 빛이 제1, 2반사판(21)(23)을 통하여 반사되므로 빛의 반사효율을 극대화시킬 수 있는 것이다.As such, the light emitted from the LED chip 30 is reflected through the first and second reflecting plates 21 and 23 by forming the first and second reflecting plates 21 and 23 on the metal base 20 in two stages. To maximize the reflection efficiency.

한편 상기 메탈베이스(20)의 실장부(24) 하부와 절연판(10)의 저면 일부분에 는 LED 칩(30)에서 발생되는 열을 방출하기 위한 히트싱크(40)를 접합하여 구성할 수도 있다.Meanwhile, a heat sink 40 for dissipating heat generated by the LED chip 30 may be bonded to a lower portion of the mounting portion 24 of the metal base 20 and a portion of the bottom surface of the insulating plate 10.

또한 상기 메탈베이스(20)의 실장부(24)와 LED 칩(30) 사이에 LED 칩(30)과 열팽창계수가 유사한 제1열방출판(41), 또는 제2열방출판(42)을 구성하거나, 제1, 2열방출판(41)(42)을 동시에 구성할 수도 있는 것이다.Also, between the mounting portion 24 and the LED chip 30 of the metal base 20, a first heat radiating plate 41 or a second heat radiating plate 42 having a similar thermal expansion coefficient to the LED chip 30 may be formed. The first and second heat radiating plates 41 and 42 may be configured at the same time.

상기 메탈베이스(20)와 제1열방출판(41), 메탈베이스(20)와 제2열방출판(42) 또는 메탈베이스(20)와 제1, 2열방출판(41)(42)은 은구리합금(AgCu)으로 브레이징(brazing) 접합한다.The metal base 20 and the first heat dissipation plate 41, the metal base 20 and the second heat dissipation plate 42, or the metal base 20 and the first and second heat dissipation plates 41 and 42 are copper. Brazing is performed by alloy (AgCu).

상기 제1열방출판(0)은 구리(Cu) 또는 알루미늄(Al)으로 구성한다.The first heat radiating plate 0 is made of copper (Cu) or aluminum (Al).

상기 제2열방출판(31)은 몰리브덴(Mo), 몰리브덴과 구리 합금(MoCu), 또는 구리와 텅스텐 합금(CuW) 중 하나로 구성한다.The second heat dissipation plate 31 is composed of one of molybdenum (Mo), molybdenum and copper alloy (MoCu), or copper and tungsten alloy (CuW).

상기 구리와 몰리브덴 합금(MoCu)은 구리(Cu) 10∼70 중량％, 몰리브덴(Mo) 30∼90 중량％ 또한 구리와 텅스텐 합금은 구리(Cu) 10∼70 중량％, 텅스텐(W) 30∼90 중량％로 합금하는 것이 바람직하다.The copper and molybdenum alloy (MoCu) is 10 to 70% by weight of copper (Cu), the molybdenum (Mo) 30 to 90% by weight, and the copper and tungsten alloy is 10 to 70% by weight of copper (Cu), and the tungsten (W) 30 to It is preferable to alloy at 90 weight%.

이와 같이 제1열방출판(41), 제2열방출판(42)을 접합하므로서 제1, 2열방출판(41)(42)이 LED 칩(40)의 열팽창계수와 유사하게 구성되어 LED 칩(30)에서 발생되는 되는 열을 제1, 2열방출판(41)(42)이 1차 흡수하여 방출하고 히트싱크(40)가 나머지 열을 방출하는 것이다.As described above, the first and second heat radiating plates 41 and 42 are formed to be similar to the thermal expansion coefficient of the LED chip 40 by joining the first and second heat radiating plates 41 and 42. The first and second heat dissipation plates 41 and 42 are absorbed and released by the first and second heat dissipation plates 41 and 42, and the heat sink 40 emits the remaining heat.

이와 같은 구성의 본 발명은 LED 칩(30)서 고열이 발생되더라도 LED 칩(30)과 열팽창계수가 유사한 재질로 제1, 2열방출판(41)(42)을 구성함으로서 응력의 발 생을 방지하는 한편, 히트싱크(40)와 LED 칩(30)의 분리가 방지되고, 열 방출효과가 높은 것이다.The present invention having such a configuration prevents the occurrence of stress by configuring the first and second heat dissipation plates 41 and 42 made of a similar material to the LED chip 30 even if high heat is generated in the LED chip 30. On the other hand, separation of the heat sink 40 and the LED chip 30 is prevented, and the heat dissipation effect is high.

이상에서는 본 발명의 바람직한 실시예에 대하여 도시하고 또한 설명하였으나, 본 발명은 상기한 실시예에 한정되지 아니하며, 청구범위에서 청구하는 본 발명의 요지를 벗어남이 없이 당해 본 발명이 속하는 분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변형 실시가 가능한 것은 물론이고, 그와 같은 변경은 기재된 청구범위 내에 있게 된다.Although the preferred embodiments of the present invention have been illustrated and described above, the present invention is not limited to the above-described embodiments, and the present invention is not limited to the above-described embodiments without departing from the spirit of the present invention as claimed in the claims. Various modifications can be made by those skilled in the art, and such modifications are intended to fall within the scope of the appended claims.

도 1은 본 발명의 일실시예를 예시한 전체사시도1 is a perspective view illustrating an embodiment of the present invention

도 2는 본 발명의 일실시예를 예시한 분리 사시도Figure 2 is an exploded perspective view illustrating an embodiment of the present invention

도 3은 본 발명의 일실시예를 예시한 단면도3 is a cross-sectional view illustrating an embodiment of the present invention.

도 4는 본 발명의 다른 실시예를 예시한 단면도4 is a cross-sectional view illustrating another embodiment of the present invention.

도 5는 본 발명의 또 다른 실시예를 예시한 단면도5 is a cross-sectional view illustrating another embodiment of the present invention.

* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

10 : 절연판 11 : 접점10: insulation plate 11: contact

12 : 연결단자 13 : 삽입공12: connecting terminal 13: insertion hole

20 : 메틸베이스 21 : 제1반사판20: methyl base 21: first reflector

22 : 평탄면 22a : 접점공22: flat surface 22a: contact hole

23 : 제2반사판 24 : 실장부23: second reflector 24: mounting part

30 : LED 칩 31 : 리드선30: LED chip 31: lead wire

40 : 히트싱크 41 : 제1열방출판40: heat sink 41: first heat release plate

42 : 제2열방출판42: second heat release plate

Claims (4)

상부에 접점(11)이 형성되고 하부에 연결단자(12)가 형성되어 접점(11)과 연결단자(12)가 전기적으로 연결되며 중앙에는 삽입공(13)이 형성된 절연판(10)과, 제1반사판(21)과 제2반사판(23)이 평탄면(22)으로 분리되어 층을 이루며 형성되고 평탄면(22)에는 접점공(22a)이 형성되며 제1반사판(21)으로 둘러싸여 요입되어 구성되는 실장부(24)를 갖는 메탈베이스(20)가 형성되어, 절연판(10)의 삽입공(13)에 메탈베이스(20)의 실장부(24) 하부 외측이 끼워져 접합되며, 메탈베이스(20)의 실장부(24) 내측에는 LED 칩(30)이 실장되고, LED 칩(30)의 리드선(31)이 메탈베이스(20)의 접점공(22a)을 통하여 절연판(10)의 접점(11)에 전기적으로 결선되어 구성됨을 특징으로 하는 고출력 LED.An insulating plate 10 having a contact 11 formed at an upper portion thereof, and a connecting terminal 12 formed at a lower portion thereof, so that the contact 11 and the connecting terminal 12 are electrically connected, and an insertion hole 13 formed at the center thereof. The first reflecting plate 21 and the second reflecting plate 23 are separated into flat surfaces 22 to form a layer, and the contact surface 22a is formed in the flat surface 22 and surrounded by the first reflecting plate 21 to be recessed. A metal base 20 having a mounting portion 24 formed thereon is formed, and the lower outer side of the mounting portion 24 of the metal base 20 is joined to the insertion hole 13 of the insulating plate 10 to join the metal base ( The LED chip 30 is mounted inside the mounting portion 24 of the 20, and the lead wire 31 of the LED chip 30 contacts the contacts of the insulating plate 10 through the contact holes 22a of the metal base 20. High power LED, characterized in that the electrical connection is configured in 11). 제 1항에 있어서,The method of claim 1, 상기 절연판(10)은 PCB(인쇄회로기판 : printed circuit board) 또는 세라믹중 어느 하나를 선택하여 구성하며, 상기 메탈베이스(20)는 구리(Cu) 또는 알루미늄(Al) 중에 어느 하나를 선택하여 구성함을 특징으로 하는 고출력 LED.The insulating plate 10 is configured by selecting any one of a PCB (printed circuit board) or ceramic, and the metal base 20 is configured by selecting any one of copper (Cu) or aluminum (Al). High power LED, characterized in that. 제 1항에 있어서,The method of claim 1, 상기 메탈베이스(20)의 실장부(24) 하부와 절연판(10)의 저면 일부분에는 LED 칩(30)에서 발생되는 열을 방출하기 위한 히트싱크(40)를 접합하여 구성함을 특징으로 하는 고출력 LED.A high output characterized in that the heat sink 40 for dissipating heat generated from the LED chip 30 is bonded to the lower portion of the mounting portion 24 and the insulating plate 10 of the metal base 20 LED. 제 1항에 있어서,The method of claim 1, 상기 메탈베이스(20)의 실장부(24)와 LED 칩(30) 사이에 LED 칩(30)과 열팽창계수가 유사한 제1열방출판(41) 또는 제2열방출판(42)을 구성하거나, 제1, 2열방출판(41)(42)을 동시에 구성하고,Between the mounting part 24 of the metal base 20 and the LED chip 30, a first heat radiating plate 41 or a second heat radiating plate 42 having a similar thermal expansion coefficient to the LED chip 30 is formed, or 1, 2 heat-dissipating plates 41, 42 are configured simultaneously, 상기 제1열방출판(41)은 구리(Cu) 또는 알루미늄(Al) 중에 어느 하나를 선택하여 구성하며, 상기 제2열방출판(42)은 몰리브덴(Mo), 구리(Cu) 10∼70 중량％와 몰리브덴(Mo) 30∼90 중량％로 이루어진 합금(MoCu), 구리(Cu) 10∼70 중량％, 텅스텐(W) 30∼90 중량％로 이루어진 합금(CuW) 중 어느 하나를 선택하여 구성함을 특징으로 하는 고출력 LED.The first heat dissipation plate 41 is configured by selecting any one of copper (Cu) or aluminum (Al), and the second heat dissipation plate 42 is 10 to 70 wt% of molybdenum (Mo) and copper (Cu). And an alloy (MoCu) consisting of 30 to 90% by weight of molybdenum (Mo), an alloy (CuW) consisting of 10 to 70% by weight of copper (Cu) and 30 to 90% by weight of tungsten (W). High power LED, characterized in that.
KR1020090062525A 2009-07-09 2009-07-09 High output LED KR101094132B1 (en)

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