KR100764461B1 - Semiconductor Package Having a Buffer Layer - Google Patents

Abstract

A semiconductor package having a buffer layer is provided.

The present invention, at least one semiconductor chip element; A heat radiator on which the semiconductor chip element is mounted; A package body having an assembly hole in which the heat sink is disposed; An electrode part provided in the package body to be electrically connected to the semiconductor chip device; And a thermal expansion coefficient having a size corresponding to a thermal expansion coefficient of the package body and a thermal expansion coefficient of the heat sink, and having at least one coating layer integrally coated on an outer surface of the heat sink corresponding to an inner surface of the assembly hole. A buffer layer; It includes.

According to the present invention, it is possible to prevent peeling and crack defects at the interface due to thermal expansion difference between the heat sink and the package body during a sudden temperature change, and excellent heat dissipation efficiency, and reduce manufacturing cost and manufacturing time.

Buffer layer, semiconductor package, light emitting chip, IC chip, heat dissipation layer

Description

Semiconductor Package Having a Buffer Layer

1 illustrates a general semiconductor package,

a) is a longitudinal sectional perspective view when the semiconductor element is a light emitting chip;

b) is a longitudinal sectional view when the semiconductor element is an integrated circuit.

2 is a cross-sectional perspective view showing a first embodiment of a semiconductor package having a buffer layer according to the present invention.

3 is a cross-sectional perspective view showing a second embodiment of a semiconductor package having a buffer layer according to the present invention.

4 is a cross-sectional perspective view showing a third embodiment of a semiconductor package having a buffer layer according to the present invention.

5A, 5B, and 5C are cross-sectional cross-sectional views of a semiconductor package having a buffer layer according to the present invention.

Explanation of symbols on the main parts of the drawings

110,210: semiconductor chip element 111: light emitting chip

211: IC chip 1 120,220: heat sink

130,230: package body 140,240: electrode

150,250: buffer layer 190,290: substrate

The present invention relates to a semiconductor package, and more particularly, to a semiconductor package having a heat sink capable of absorbing stress generated at the interface of the package body during shrinkage and expansion due to rapid temperature change to prevent peeling and cracking. will be.

In general, a light emitting diode (LED) is a semiconductor light emitting device that emits light when a current flows, and converts electrical energy into light energy using a PN junction diode made of GaAs and GaN optical semiconductors.

The range of light from these LEDs ranges from red (630 nm to 700 nm) to blue-violet (400 nm), including blue, green and white, and the LEDs consume less power and higher efficiency than conventional light sources such as incandescent bulbs and fluorescent lamps. It has advantages such as long operating life and its demand is continuously increasing.

Recently, the application range of LEDs is gradually expanding from small lighting of mobile terminals to indoor lighting, automotive lighting, and backlight for large liquid crystal display (LCD).

On the other hand, the power applied to the semiconductor device which is the light emitting source increases in proportion to the light intensity generated when the current is applied. Accordingly, the light emitting chip and the package itself, which are semiconductor devices, are deteriorated due to heat generated during light emission in high power LEDs that consume a lot of power. In order to prevent damage is to adopt a separate heat dissipation structure.

Also, in the case of a semiconductor package such as a power amplifier module (hereinafter referred to as a PAM) that amplifies a transmission signal in a wireless communication device, about 100 to about 100 to about an IC chip assembled inside the semiconductor package at the time of operation due to its driving characteristics. High heat of 200 ° C is continuously generated, and a separate heat dissipation structure is adopted to prevent the IC chip and the package itself from being degraded and damaged by the heat.

1 illustrates a general semiconductor package, a) is a longitudinal sectional perspective view when a semiconductor device is a light emitting chip, and b) is a longitudinal sectional view when a semiconductor device is an integrated circuit.

As shown in FIG. 1A, the semiconductor package 10, such as a light emitting diode in which the semiconductor device is a light emitting chip, includes a light emitting chip 11 as a light emitting source, a heat sink 12 mounted at the center of an upper surface thereof, and The lead frame 14 electrically connected to the light emitting chip 11 mounted on the heat sink 12 and the metal wire 13 and the insertion hole 15a in which the heat sink 12 are disposed are placed in the center of the body. And a package body 15 formed through and formed integrally with the lead frame 14.

Here, the radiator 12 is a means for cooling by dissipating heat generated when the light emitting chip 11 emits light to the outside, and the substrate 19 via the bonding means 12a made of a material having excellent thermal conductivity. Mounted on the

The upper surface of the mold unit 15 is provided with a separate lens 16 for dissipating light generated when the semiconductor device 11 emits light to the outside, between the mold unit 15 and the lens 16. A space made of a transparent resin is filled in the space of the semiconductor element 11 and the metal wire 13 to project the emitted light as it is.

The other end of the lead frame 14 is electrically connected to the pattern circuit 19a printed on the substrate 19 via the solder material 14a.

U.S. Patent Application Publication No. 2004/0075100 (published on Apr. 22, 2004) discloses a heat sink on which a semiconductor element as a light emitting source is mounted, a lead frame electrically connected thereto, and injection molding to integrally fix the heat sink and the lead frame. Disclosed is a structure of a semiconductor package including a mold portion, and having a cup-shaped recessed portion reflecting light generated from the semiconductor element.

However, when a sudden temperature change occurs in an environment in which the semiconductor package 10 having such a structure is used, the thermal expansion coefficient difference between the heat sink 12 made of a metal material and the package body 15 made of a resin material is caused. Defects such as peeling and cracking occur at the physical interface between the package body 15 and the heat sink 12.

In addition, as shown in FIG. 1B, another type of semiconductor package 20 in which the semiconductor element is an IC chip includes an IC chip 21 for generating high temperature heat during operation, and a plurality of semiconductor packages 20 mounted thereon. Heat dissipation filled with two heat dissipating via holes 22, an electrode portion 24 electrically connected to the IC chip 21 mounted on the via holes 22, and a metal wire 23 via the metal wire 23. It is configured to include a package main body 25 having a via hole 22 in the center of the body and the electrode portion 24 is provided.

The IC chip 21 is die-bonded on the heat dissipation via hole 22 through the heat conductive adhesive 28, and the lower end of the heat dissipation via hole 22 is mounted on the upper surface of the substrate 29. . Accordingly, the heat generated from the IC chip 21 during the operation of the semiconductor package 20 is radiated through the via hole 22 and the substrate 29 filled with metal paste having excellent thermal conductivity such as Ag.

However, there is a limit in the size and number of installation of the heat dissipation via hole 22 formed in the center of the body of the package body 25 of the semiconductor package 20, and there is a problem in that the heat dissipation efficiency is lowered.

In addition, as a separate process in the heat dissipation via hole 22, an excessive manufacturing cost and a manufacturing time are required to fill the metal paste, which acts as a defective element.

Accordingly, the present invention is to solve the conventional problems as described above, the purpose is to prevent peeling, crack defects at the interface due to the thermal expansion difference between the heat sink and the package body during a sudden temperature change, and excellent heat dissipation efficiency In addition, to provide a semiconductor package having a buffer layer that can reduce the manufacturing cost and manufacturing time.

In order to achieve the above object, the present invention, at least one semiconductor chip element; A heat radiator on which the semiconductor chip element is mounted; A package body having an assembly hole in which the heat sink is disposed; An electrode part provided in the package body to be electrically connected to the semiconductor chip device; And a thermal expansion coefficient having a size corresponding to a thermal expansion coefficient of the package body and a thermal expansion coefficient of the heat sink, and having at least one coating layer integrally coated on an outer surface of the heat sink corresponding to an inner surface of the assembly hole. A buffer layer; It provides a semiconductor package having a buffer layer comprising a.

Preferably, the buffer layer is provided with at least one metal coating layer that is coated with a predetermined thickness on the outer surface of the heat sink.

Preferably, the buffer layer is provided with at least one ceramic coating layer which is coated with a predetermined thickness on the outer surface of the heat sink.

Preferably, the buffer layer is provided with at least one resin coating layer coated on the outer surface of the heat sink to a predetermined thickness.

Preferably, the buffer layer is provided with at least one mixed coating layer mixed with a metal, a resin, or a ceramic coated with a predetermined thickness on the outer surface of the heat sink.

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Preferably, the inner surface of the buffer layer is provided with an inner groove in contact with the outer groove formed on the outer surface of the heat sink.

Preferably, the outer surface of the buffer layer is provided with an outer groove in contact with the inner groove formed on the inner surface of the assembly hole.

Preferably, the semiconductor chip device is provided with a light emitting chip that generates light when the power is applied, the electrode portion is a lead frame wire-bonded via the light emitting chip and the metal wire, the package body integrally the lead frame It consists of a resin mold material provided.

Preferably, the semiconductor chip device is an IC chip, the electrode portion is an electrode pattern to be wire bonded via the IC chip and a metal wire, the package body is provided with the electrode pattern, a plurality of dielectric sheets are laminated ceramic Consists of structures.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

2 is a cross-sectional perspective view showing a first embodiment of a semiconductor package having a buffer layer according to the present invention.

As shown in FIG. 2, the semiconductor package 100 of the present invention can prevent cracking and peeling at an interface due to a difference in expansion coefficient generated when a sudden temperature change of an external environment occurs. 110, a heat sink 120, a package body 130, an electrode unit 140, and a buffer layer 150.

The semiconductor chip device 110 includes at least one light emitting chip that generates light of a predetermined intensity when power is applied and simultaneously generates heat in proportion to the applied current strength.

Such light emitting chips are made of materials such as GaAlAs based on active layer and cladding layer, AlGain based on red semiconductor laser device of high density optical disk, AlGainP based on AlGainPAs, and GaN based used on electronic devices such as transistors. Although not limited thereto, the semiconductor device may be configured in various ways.

Here, the light emitting chip is mounted on the upper surface of the heat dissipator 120 through a soldering material such as Au-Sn, Pb-Sn, or the like, or an adhesive means such as Ag paste.

The heat sink 120 is a cylindrical metal structure in which the light emitting chip 111, which is the semiconductor chip device 110, is mounted on an upper surface thereof, which is an assembly hole 131 which is a space formed in the center of the body of the package body 130. )

The heat dissipator 120 is a heat dissipation means for easily transferring heat generated when the light emitting chip 111 emits light to the substrate 190 to prevent overheating, which may be called a heat sink slug. .

It is preferably provided with a metal material having excellent thermal conductivity, and more specifically, may be composed of any one metal material of copper, silver, aluminum, iron, nickel and tungsten or an alloy material including at least one thereof.

The upper surface of the heat sink 120 is provided with a reflecting portion 125 inclined at a predetermined angle so that the light generated from the light emitting chip 110 can be reflected and irradiated in the light extraction direction.

The package body 130 penetrates through the assembly hole 131, which is a space in which the heat sink 120 on which the light emitting chip 111 is mounted is disposed, and is electrically connected to the light emitting chip 111. Is a resin material that is injection molded to integrally fix the lead frame.

The package body 130 is preferably injection molded using a polymer resin that is easy to inject, but is not limited thereto. Various resin materials may be used as materials.

The electrode unit 140 is provided as a pair of lead frames 141 integrally provided on the package body 130 that is injection molded to be electrically connected to the semiconductor chip device 110.

One end of the lead frame 141 is exposed through an upper surface of the package body 130 to be electrically connected to the light emitting chip 111 via the metal wire 113, and the lead frame 141 may be exposed. The other end is exposed to the outer surface of the package body 130 to be electrically connected through the pattern circuit 190a formed on the upper surface of the substrate 190 and the solder material 140a.

On the other hand, the buffer layer 150 has a thermal expansion coefficient having a size corresponding to the thermal expansion coefficient of the package body 130 made of a resin material and the thermal flatness coefficient of the heat sink 120 to absorb the stress due to thermal expansion difference It is provided on the outer surface of the heat sink 120 to be.

In this case, even if the volume of the heat dissipating body 120 made of a metal material expands or contracts due to a rapid temperature change in the external environment, the outer surface of the heat dissipating body 120 and the inner surface of the assembly hole 131 of the package body 130 are used. It is possible to prevent peeling and cracking at the interface between them.

Here, the buffer layer 150 may be provided with at least one metal coating layer coated on the outer surface of the heat sink 120 with a predetermined thickness, but is not limited thereto. It may be provided with at least one ceramic coating layer coated with a thickness or at least one mixed coating layer mixed with a metal, a resin or a ceramic coated with a predetermined thickness on the outer surface of the radiator 120.

3 is a sectional perspective view showing a second embodiment of a semiconductor package having a buffer layer according to the present invention.

As shown in FIG. 3, the semiconductor package 200 of the present invention can prevent cracking and peeling at an interface due to a difference in expansion coefficient generated when a sudden temperature change of an external environment occurs. 210, a heat sink 220, a package body 230, an electrode unit 240, and a buffer layer 250 are configured.

The semiconductor chip device 210 includes at least one IC chip 211 that generates heat and at the same time generates an electric signal when power is applied.

Here, the IC chip 211 is die-attached to the upper surface of the heat dissipator 220 through an adhesive means 215 having excellent thermal conductivity.

The heat dissipator 220 is a cylindrical metal structure in which the IC chip 211 is die-attached to the upper surface, which is disposed in the assembly hole 231 formed through the center of the body of the package body 230.

The heat dissipator 220 is a heat dissipation means for easily transferring heat generated from the IC chip 211 to the side of the substrate 290 as described above to prevent overheating, which is preferably provided with a metal material having excellent thermal conductivity. More specifically, it may be composed of a metal material of any one of copper, silver, aluminum, iron, nickel and tungsten or an alloy material containing at least one thereof.

The package body 230 is an electrode part 240 formed through the assembly hole 231 in which the heat sink 220 on which the IC chip 211 is mounted is disposed, and electrically connected to the IC chip 211. The electrode pattern 241 is a ceramic structure formed on the bottom surface of the stepped portion 235.

The package body 230 is formed of a ceramic structure in which a plurality of dielectric sheets are stacked to form the assembly hole 231.

The electrode unit 240 includes a pair of electrode patterns 241 provided on the stepped portion 235 of the package body 230 in which a plurality of dielectric sheets are stacked in multiple layers so as to be electrically connected to the IC chip 211. The upper electrode pattern 241 is wire-bonded to the other end of the metal wire 213 having one end wire-bonded to the upper surface of the IC chip 211.

On the other hand, the buffer layer 250 has a thermal expansion coefficient having a size corresponding to the thermal expansion coefficient of the package body 230 made of a ceramic material in which the dielectric sheet is laminated and the thermal flatness coefficient of the heat dissipator 220, the thermal expansion difference It is provided on the outer surface of the radiator 220 to absorb the stress caused.

In this case, as in the first embodiment described above, even if the volume of the heat dissipator 220 made of a metal material expands or contracts due to a rapid temperature change of the external environment, the outer surface of the heat dissipator 220 and the package body 230 It is possible to prevent peeling and cracking at the interface between the inner surface of the assembling hole 231).

Here, the buffer layer 250 may be provided with at least one metal coating layer coated on the outer surface of the heat sink 220 with a predetermined thickness, but is not limited thereto. The buffer layer 250 may be fixed to the outer surface of the heat sink 220. It may be provided with at least one ceramic coating layer coated with a thickness or at least one mixed coating layer mixed with a metal, a resin or a ceramic coated with a predetermined thickness on the outer surface of the radiator 220.

4 is a sectional perspective view showing a third embodiment of a semiconductor package having a buffer layer according to the present invention, wherein the buffer layer 250 provided in the semiconductor package 200a is evenly distributed over the entire outer surface of the heat sink 220. It may be provided with at least one coating layer to be coated, but is not limited thereto, and at least one upper coating layer 250a coated on the upper edge of the upper end of the heat dissipating member 220 corresponding to the upper end of the assembly hole 231, At least one lower coating layer 250b coated on the lower edge of the heat dissipating element 220 corresponding to the lower end of the assembly hole 231 is provided.

In this case, by preventing the physical damage of the package body 130 by reinforcing the upper and lower edges of the assembly hole 231 having a weak strength when the stress caused by the thermal expansion difference between the heat sink 120 and the package body 130, It can strengthen the mechanical strength.

5A, 5B, and 5C are cross-sectional cross-sectional views of a semiconductor package having a buffer layer according to the present invention, and the buffer layers 150 and 250 provided on the outer surface of the heat sinks 120 and 220 are shown in FIG. As shown in Figure 5 (a), it is provided with at least one coating layer evenly coated on the outer surface of the heat dissipator (120, 220).

In addition, as shown in FIG. 5 (b), the inner surfaces of the buffer layers 150 and 250 are interviewed with the outer grooves 124 and 224 formed on the outer surfaces of the heat sinks 120 and 220. Inner grooves 154 and 254 are provided, or as shown in FIG. 5 (c), the inner grooves formed on the inner surfaces of the assembly holes 131 and 231 are formed on the outer surfaces of the buffer layers 150 and 250. And outer recesses 154a and 254a which are in contact with the 131a and 231a.

In this case, the contact area between the inner grooves 154 and 254 of the buffer layers 150 and 250 and the outer grooves 124 and 224 of the heat sinks 120 and 220 or the buffer layers 150 and 250. Since the surface contact area between the outer grooves 154a and 254a of the grooves and the inner grooves 131a and 231a of the assembly holes 131 and 231 can be increased, the radiators 120 and 220 and the substrate ( It is possible to increase the heat dissipation efficiency of heat dissipation to the outside through the 190) (290).

While the invention has been shown and described in connection with specific embodiments, it is to be understood that various changes and modifications can be made in the art without departing from the spirit or the scope of the invention as set forth in the claims below. It will be appreciated that those skilled in the art can easily know.

According to the present invention as described above, it is possible to accommodate the contraction / expansion according to the rapid temperature change of the external environment on the outer surface of the heat sink in which the semiconductor chip element, such as a light emitting chip or IC chip that generates heat during operation is mounted By providing the buffer layer, it is possible to prevent peeling and crack defects at the interface due to the thermal expansion difference at the interface between the heat sink and the package body due to the thermal expansion coefficient of the heat sink and the thermal expansion difference of the package body, thereby improving the quality of the semiconductor package. And the effect of extending the service life is obtained.

Claims (10)

At least one semiconductor chip element; A heat radiator on which the semiconductor chip element is mounted; A package body having an assembly hole in which the heat sink is disposed; An electrode part provided in the package body to be electrically connected to the semiconductor chip device; And At least one coating layer having a thermal expansion coefficient having a size corresponding to the thermal expansion coefficient of the package body and the thermal expansion coefficient of the heat sink to be integrally coated on the outer surface of the heat sink corresponding to the inner surface of the assembly hole Buffer layer; A semiconductor package having a buffer layer comprising a. The method of claim 1, The buffer layer is a semiconductor package having a buffer layer, characterized in that provided with at least one metal coating layer coated with a predetermined thickness on the outer surface of the heat sink. The method of claim 1, The buffer layer is a semiconductor package having a buffer layer, characterized in that provided with at least one ceramic coating layer which is coated with a predetermined thickness on the outer surface of the heat sink. The method of claim 1, The buffer layer is a semiconductor package having a buffer layer, characterized in that provided with at least one mixed coating layer of a metal, a resin or a ceramic is coated with a predetermined thickness on the outer surface of the heat sink. delete delete The method of claim 1, The inner surface of the buffer layer is a semiconductor package having a buffer layer, characterized in that it has an inner groove in contact with the outer groove formed on the outer surface of the heat sink. The method of claim 1, The outer surface of the buffer layer is a semiconductor package having a buffer layer, characterized in that provided with an outer groove in contact with the inner groove formed on the inner surface of the assembly hole. The method of claim 1, The semiconductor chip device may include a light emitting chip that generates light when power is applied, and the electrode part may be a lead frame wire-bonded through the light emitting chip and a metal wire, and the package body may include the lead frame in one piece. A semiconductor package having a buffer layer comprising a mold. The method of claim 1, The semiconductor chip device is an IC chip, and the electrode part is an electrode pattern wire-bonded through the IC chip and a metal wire, and the package body is formed of a ceramic structure in which the electrode pattern is provided and a plurality of dielectric sheets are stacked. A semiconductor package having a buffer layer, characterized in that.

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