CN110491865A - Light emitting diode construction - Google Patents
Light emitting diode construction Download PDFInfo
- Publication number
- CN110491865A CN110491865A CN201810457384.8A CN201810457384A CN110491865A CN 110491865 A CN110491865 A CN 110491865A CN 201810457384 A CN201810457384 A CN 201810457384A CN 110491865 A CN110491865 A CN 110491865A
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- Prior art keywords
- emitting diode
- light
- light emitting
- csp
- base plate
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The present invention is a kind of light emitting diode construction, and it includes a flexible base plate and one or several wafer level packaging grade (CSP) light-emitting diode chip for backlight unit.The flexible base plate is that for substrate, peripheral coating ceramic insulating layer, the flexible base plate are provided with several conductive electrodes by metal layer.Wafer level packaging grade (CSP) light-emitting diode chip for backlight unit is set on the flexible base plate；Wherein, the conductive unit of wafer level packaging grade (CSP) light-emitting diode chip for backlight unit can be electrically connected several conductive electrodes of the flexible base plate.
Description
Technical field
The present invention is used as light emitting diode (LED) light bulb about a kind of light emitting diode construction, especially one kind
And the light emitting diode construction of light emitting diode (LED) filament.
Background technique
Light emitting diode (LED, Light Emitting Diode) has small power consumption, high brightness, voltage low and integrated electric
Road matching is easy, is easy driving and the advantages that long service life, therefore has been widely used in lighting device and various industries.
In the recent period, the chip setting in light emitting diode develops to flip-chip by traditional positive cartridge chip and wafer scale is sealed
Grade (chip scale package, CSP) chip is filled, to reduce the size after LED package.
Traditional positive cartridge chip is needed through routing, the pole N of chip and the pole P is connect with the conductive electrode on heat sink laggard
Row encapsulation.And flip-chip is connected the pole N of chip and the pole P and electrode bumps by the way that welding electrode convex block is arranged on heat sink
Connect, i.e., can complete electrically conducting for electrode without routing, can improve positive cartridge chip need routing engagement etc. programs and gasket etc. its
The cumbersome manufacture of his component.
In the recent period, wafer-level packaging (CSP) chip is separately developed, is to remove the cooling plate structure of flip-chip, directly
The pole P and the pole N are disposed on the substrate, thus have thin encapsulation and electrically it is excellent (because conducting wire approach is short, inductance and capacitor
It is low) characteristic.
However, wafer-level packaging (CSP) is although chip light emitting diode has small in size and electrical excellent characteristic,
The heat sink (such as ceramic heat-dissipating plate) connecting with the pole chip P and the pole N bottom is removed when encapsulation, but since chip is directly to be arranged
Use is packaged after metallic circuit (MCPCB), i.e., wafer-level packaging (CSP) chip light emitting diode is common has heat dissipation
Property bad problem, heat flux is only capable of being radiated by the welding surface of the electrode bumps and metallic circuit of the pole P and the pole N, Wu Fatong
Formal dress and flip chip type light emitting diode can pass through heat sink Homogeneouslly-radiating.Therefore, two pole of wafer-level packaging (CSP) chip light emitting
The heat of pipe is often excessively concentrated, and easy heat radiation does not cause the service life of light emitting diode to shorten, and lower in the case where being used for a long time
It is bright.
Summary of the invention
Therefore it includes a flexible base plate, the pliabilities the object of the present invention is to provide a kind of light emitting diode construction
Substrate is that for substrate, peripheral coating ceramic insulating layer, the flexible base plate are provided with several conductive electrodes by metal layer；And
One or several wafer level packaging grade (CSP) light-emitting diode chip for backlight unit, wafer level packaging grade (CSP) light-emitting diode chip for backlight unit be set to
On the flexible base plate；Wherein, the guide-connecting units of wafer level packaging grade (CSP) light-emitting diode chip for backlight unit can several be led with this
Electrode forms electrical connection.Further, there are several perforations, this is passed through on the flexible base plate of the light emitting diode construction
Conductive unit is respectively provided in hole.
It is a further object of the present invention to provide a kind of light emitting diode constructions, and it includes a flexible base plate, the pliabilities
Substrate, which is by metal layer, is substrate and peripheral coating ceramic insulating layer, and has several perforations, is respectively provided with and leads in the perforation
Electric unit；And one or several wafer level packaging grade (CSP) light-emitting diode chip for backlight unit, wafer level packaging grade (CSP) light emitting diode
Chip is set on the flexible base plate；Wherein, the guide-connecting units of wafer level packaging grade (CSP) light-emitting diode chip for backlight unit can be with
Several conductive units form electrical connection.
Further, the ceramic insulating layer with a thickness of 10 μm to 400 μm.
Further, which further includes cup body structure, which sets
It is placed among the cup body structure.
Further, which includes one or several fluorescence coatings, is covered on the flexible base plate, is wrapped
Cover wafer level packaging grade (CSP) light-emitting diode chip for backlight unit.
Compared with existing light emitting diode construction, light emitting diode construction of the invention is had the advantage that
1. light emitting diode construction of the invention, use metal layer be substrate and peripheral coating ceramic insulating layer as base
Plate works as wafer-level packaging (CSP) chip light emitting diode since metal layer and ceramic insulating layer have good thermal diffusivity
When being arranged on, can improve existing wafer-level packaging (CSP) chip light emitting diode has heat flux excessively to concentrate, can not be uniform
The problem of heat dissipation.
2. light emitting diode construction of the invention, use metal layer be substrate and peripheral coating ceramic insulating layer as base
Plate is different from existing light emitting diode construction and ceramic layer is used only as substrate, and material cost is high；Further, since metal
Layer has pliability, therefore has preferable mechanical strength, can increase the variability of the appearance of light emitting diode construction, Jin Erzeng
Add usability in industry, such as is used as light emitting diode bulb filament after light emitting diode construction being bent
3. light emitting diode construction of the invention, due to using wafer-level packaging (CSP) chip as luminescence chip,
(SMT) equipment directly can be attached using surface wafer-level packaging (CSP) chip is arranged on the flexible base plate, Wu Xuru
Flip-chip need to complete the production in the operation equipment of the valuableness such as vacuum dust free room and bonder, can reduce manufacturing cost.
Detailed description of the invention
Fig. 1 is the diagrammatic cross-section (one) of the light emitting diode construction of the first state sample implementation of the invention.
Fig. 2 is the diagrammatic cross-section (two) of the light emitting diode construction of the first state sample implementation of the invention.
Fig. 3 is the diagrammatic cross-section of wafer level packaging grade (CSP) light-emitting diode chip for backlight unit of the invention.
Fig. 4 is the diagrammatic cross-section (one) of the light emitting diode construction of the second state sample implementation of the invention.
Fig. 5 is the diagrammatic cross-section (two) of the light emitting diode construction of the second state sample implementation of the invention.
Fig. 6 A is section signal of the light emitting diode construction of the second state sample implementation of the invention before cup body structure is divided
Figure.
Fig. 6 B is section signal of the light emitting diode construction of the second state sample implementation of the invention after cup body structure is divided
Figure.
Fig. 7 is the diagrammatic cross-section (one) of the light emitting diode construction of third state sample implementation of the present invention.
Fig. 8 is the diagrammatic cross-section (two) of the light emitting diode construction of third state sample implementation of the present invention.
Fig. 9 A is section signal of the light emitting diode construction of third state sample implementation of the present invention before cup body structure is divided
Figure.
Fig. 9 B is section signal of the light emitting diode construction of third state sample implementation of the present invention after cup body structure is divided
Figure.
Description of symbols:
100- light emitting diode construction
1- flexible base plate
11- metal layer
12- ceramic insulating layer
2- wafer level packaging grade (CSP) light-emitting diode chip for backlight unit
21- guide-connecting units
22- protective layer
23- extends contact
24- passivation layer
The structure of 25- semiconductor layer and luminescent layer composition
The first semiconductor of 251-
252- luminescent layer
The second semiconductor layer of 253-
26- substrate
3- conductive electrode
5- cup body structure
6- fluorescence coating
7- perforation
8- conductive unit
200- light emitting diode construction
300- light emitting diode construction
400- light emitting diode construction
500- light emitting diode construction
600- light emitting diode construction
700- light emitting diode construction
800- light emitting diode construction
Specific embodiment
Usually skill can be readily appreciated by the necessary technology of the invention in present invention technical field thus described below, and only
Otherwise violate spirit and scope therein, so that it may various change and modify this invention to adapt to different purposes and shape
Condition.In this way, other embodiments are also contained in claim.
Please refer to Fig. 1 and 2, for the light emitting diode construction of first state sample implementation of the invention diagrammatic cross-section (one) and
(2).
In this state sample implementation, as shown in Figure 1, light emitting diode construction 100 of the invention includes a flexible base plate 1,
The flexible base plate 1, which is by metal layer 11, is substrate and peripheral coating ceramic insulating layer 12, if the flexible base plate 1 may be provided with
Dry conductive electrode 3；And one or several wafer level packaging grade (CSP) light-emitting diode chip for backlight unit 2, the wafer level packaging grade (CSP) hair
Luminous diode chip 2 is set on the flexible base plate 1；Wherein, wafer level packaging grade (CSP) light-emitting diode chip for backlight unit 2
Conductive unit 21 can be electrically connected several conductive electrodes 3 of the flexible base plate.
Further, in this state sample implementation, the flexible base plate of light emitting diode construction of the invention is more visually needed
It to include cup body structure and fluorescence coating；As shown in Fig. 2, in light emitting diode construction 200 of the invention, the wafer level packaging grade
(CSP) light-emitting diode chip for backlight unit 2 is set among the cup body structure 5；Also, the light emitting diode construction 100 includes fluorescence coating 6,
It covers on the flexible base plate 1, coating wafer level packaging grade (CSP) light-emitting diode chip for backlight unit 2.
In this state sample implementation, the metal layer 11 can be copper, aluminium, copper alloy or aluminium alloy；The copper alloy includes copper
Kirsite, copper-tin alloy, albronze, cupro silicon or corronil etc., and it is not limited to these；The aluminium alloy is closed comprising aluminium silicon
Gold, aldray, aluminium copper, almag, alumal, alumin(i)um zinc alloy or aluminium lithium alloy, and it is not limited to these；Its
In, it is preferable with aluminium, aluminium alloy, copper or copper alloy.
In this state sample implementation, the ceramic insulating layer 12 can be general ceramic material, aoxidize comprising various metals
Object, carbide, nitride, boride, silicide or its etc. combination, example such as silicon carbide (SiC), silicon nitride (Si3N4), nitrogen
Change aluminium (AIN), aluminium oxide (Al2O3), titanium carbide (TiC), titanium boride (TiB2) or boron carbide (B4C) etc., and it is not limited to these；
It wherein, is preferable with aluminium oxide (Al2O3), silicon nitride (Si3N4), aluminium nitride (AIN), therefore three has good thermal conductivity
And thermal expansion coefficient is small.The forming method of the ceramic insulating layer 12 can be general ceramics and metal composite method, include
Coating, anodic oxidation, differential arc oxidation, plasma-based electrolytic oxidation, magnetron sputtering or sol-gel method, and it is not limited to these.It is described
Ceramic insulating layer 12 with a thickness of 10 μm~900 μm, and with 10 μm~400 μm be it is preferable, 30 μm~50 μm for more preferably, between
The ceramic insulating layer 12 of this thickness is less susceptible to fragmentation and has pliability, can bear the strength of substrate punching press when processing.Also, described
Ceramic insulating layer 12 can by eyeglass handle, have light reflective, the brightness of light emitting diode construction can be increased.
In this state sample implementation, described wafer level packaging grade (CSP) light-emitting diode chip for backlight unit 2 can be sent out to be arbitrarily used as
The wafer level packaging grade (CSP) of optical diode, such as carrier model CSP, adhesive tape type CSP or plastic molded type CSP, the present invention is not limited to
These.Further, described wafer level packaging grade (CSP) light-emitting diode chip for backlight unit 2 is preferably wafer level packaging grade as shown in Figure 3
(CSP) light-emitting diode chip for backlight unit 2, it includes a substrate 26, one first semiconductor 251, a luminescent layers 252, one second semiconductor
253, one passivation layer 24 of layer, several extension contact 23, a protective layer 22 and at least conductive bumps 21；Second semiconductor layer
253 and the illuminator layer 252 have several interlayer holes (Yu Tuzhong is not shown), about 3~10 μm of the diameter of the interlayer hole, due to
The interlayer hole can retain the in electrical contact of most luminescent layers 252 and the second type semiconductor layer 253, therefore, described
Wafer level packaging grade (CSP) light-emitting diode chip for backlight unit 2 does not simultaneously have a non-light-emitting area, thus the light of light emitting diode can be substantially improved
Output intensity has electrode different from existing positive-installed lumination of light emitting diode area and covers to two pole of luminous zone or crystal-coated light-emitting
Pipe has non-light-emitting area, and the non-light-emitting area of general crystal-coated light-emitting diodes can account for the 20%~30% of entire crystal grain, limits light
Output intensity.Wherein, which may be, for example, glass substrate, sapphire substrate, SiC substrate, gallium phosphide (GaP) substrate, phosphorus
Change arsenic gallium (GaAsP) substrate, zinc selenide (ZnSe) substrate, zinc sulphide (ZnS) substrate or zinc sulfur selenide (ZnSSe) substrate.It should be partly
The structure of conductor and illuminator layer 25 accompanies an illuminator layer between two semiconductor layers；Two semiconductor layers are respectively not
Same doping type, it includes N-type semiconductor and P-type semiconductors；The illuminator layer can be AlGaInP (AlGaInP), indium nitride
One of gallium (InGaN) or aluminum gallium arsenide (AlGaAs), and its structure can be using traditional homostyructure
(Homostructure), single heterojunction structure (Single Heterostructure), double-heterostructure (Double
Heterostructure (DH)) or multiple quantum trap (Multiple Quantum Well (MQW)).The passivation layer 24
Material includes aluminium oxide (Al2O3), silica (SiO2), silicon nitride (SiNx), spin-coating glass, silicone resin, BCB resin, ring
Oxygen resin, polyimide or combination above-mentioned, forming method includes to use the processing procedures such as traditional lithographic, etching, for example, existing
Semiconductor deposition method, comprehensively deposits a passivation layer, is then coated with a photoresist layer on passivation layer, recycles exposure development
Equal Pattern transfer techniques pattern photoresist layer and define the semiconductor layer position for being intended to exposure, and patterning photoresist layer with this is
Mask.The extension contact 23 is to connect the first semiconductor 251, luminescent layer 252 and the second semiconductor 253 to the guide-connecting units
21, which can be any metal with good conductivity.The material of the protective layer 22 can be epoxy resin, poly- sub- acyl
Amine, benzocyclobutane, liquid crystal polymer or any other suitable dielectric material.The conductive unit 21 can be convex block (bump)
Or tin ball (ball), material can be arbitrary conductive material, it includes metal, alloy or composition metal etc., such as tin, copper or
Gold, and it is not limited to these.
In this state sample implementation, it includes metal, alloy or compound that the conductive electrode 3, which can be general conductive material,
Metal etc., such as silver, copper, gold, aluminium, sodium, molybdenum, tungsten, zinc, nickel, iron, platinum, tin, lead, silver-bearing copper, cadmium copper, chromium-copper, beryllium copper, zirconium copper, aluminium
Magnesium silicon, magnalium, magnalium iron, aluminium zirconium, Aludirome, silicon carbide, graphite etc., and it is not limited to these.
In this state sample implementation, the cup body structure 5 can be the barricade of general LED encapsulation body, such as
The transparent colloids such as silicon, resin are hardened to be constituted, and is not limited to these.
In this state sample implementation, the fluorescence coating 6 refers to that a transparent glue material is wherein dispersed with fluorescent powder；The fluorescence
6 major function of layer include to change light after the light for issuing wafer level packaging grade (CSP) light-emitting diode chip for backlight unit 2 passes through fluorescence coating
Line color；Wafer level packaging grade (CSP) light-emitting diode chip for backlight unit and conductive unit are protected, oxidation efficiency is reduced, promotes wafer envelope
Fill grade (CSP) light-emitting diode chip for backlight unit service life.Wherein, the specific example of the transparent glue material is such as: phenolic resin, asphalt mixtures modified by epoxy resin
Rouge, silica gel, polyurethane resin, unsaturated polyester resin, acrylic resin, polyolefin/mercaptan, vinyl ether resin etc., compared with
Good is epoxy resin, silica gel, methyl silicon resin, phenyl polysiloxane, methyl phenyl silicone resin or modified silicone resin, in the present invention
Not limit.In the present invention, the wafer level packaging grade (CSP) luminous two of the fluorescence coating 6 to be covered in the cup body structure 5
Pole pipe chip 2 is example, and only fluorescence coating 6 can also be covered in the wafer level packaging grade (CSP) without cup body structure 5
On light-emitting diode chip for backlight unit 2, not limited in the present invention.
Please refer to Fig. 4 and Fig. 5, for the light emitting diode construction of second state sample implementation of the invention diagrammatic cross-section (one) and
(2).
As shown in figure 4, light emitting diode construction 300 of the invention includes a flexible base plate 1 in this state sample implementation,
The flexible base plate 1, which is by metal layer 11, is substrate and peripheral coating ceramic insulating layer 12, if the flexible base plate 1 may be provided with
Dry conductive electrode 3；And one or several wafer level packaging grade (CSP) light-emitting diode chip for backlight unit 2, the wafer level packaging grade (CSP) hair
Luminous diode chip 2 is set on the flexible base plate 1；Wherein, wafer level packaging grade (CSP) light-emitting diode chip for backlight unit 2
Conductive unit 21 can be electrically connected several conductive electrodes 3 of the flexible base plate；And if having on the flexible base plate 1
A perforation 7 is done, is respectively provided with conductive unit 8 in the perforation.
Further, in this state sample implementation, the flexible base plate of light emitting diode construction of the invention is more visually needed
It to include cup body structure；As shown in Figure 6 A and 6 B, in light emitting diode construction 400 of the invention, the wafer level packaging grade (CSP)
Light-emitting diode chip for backlight unit is set among the cup body structure 5；And the light emitting diode construction 100 further includes fluorescence coating 6, covers
In on the flexible base plate 1, coating wafer level packaging grade (CSP) light-emitting diode chip for backlight unit 2.
In this state sample implementation, the metal layer 11, ceramic insulating layer 12, conductive electrode 3, wafer level packaging grade (CSP)
The light emitting diode construction 100 of light-emitting diode chip for backlight unit 2, conductive unit 21 and fluorescence coating 6 with the first above-mentioned state sample implementation.
In this state sample implementation, side is enclosed in the perforation 7 be provided with a ceramic insulating layer and coat 7 inner circumferential side of perforation
Wall surface, the material of the ceramic insulating layer general ceramic insulation layer material same as above, the present invention not limit.
In this state sample implementation, the conductive unit 8 can be general conductive material, it includes metal, alloy or answer
Alloy belong to etc., such as silver, copper, gold, aluminium, sodium, molybdenum, tungsten, zinc, nickel, iron, platinum, tin, lead, silver-bearing copper, cadmium copper, chromium-copper, beryllium copper, zirconium copper,
Al-mg-si, magnalium, magnalium iron, aluminium zirconium, Aludirome, silicon carbide, graphite etc., and it is not limited to these.
In this state sample implementation, the cup body structure 5 can be with the cup body structure 5 in the first above-mentioned state sample implementation
Constituted by the transparent colloids such as the barricade of general LED encapsulation body, such as silicon, resin are hardened, or such as Fig. 6 A and
Shown in Fig. 6 B, light emitting diode construction 500 of the invention be via by the flexible base plate 1 via closing protrusion obtained by punching press
The cup body structure 5 that structure is formed；It wherein, can be in light emitting diode knot when the cup body structure 5 is obtained via punching press
After structure body completes sealing, directly it is split, can be obtained light emitting diode.
Please refer to Fig. 7 and Fig. 8, be third state sample implementation of the present invention light emitting diode construction diagrammatic cross-section (one) and
(2).
As shown in fig. 7, light emitting diode construction 600 of the invention includes a flexible base plate 1 in this state sample implementation,
The flexible base plate 1, which is by metal layer 11, is substrate and peripheral coating ceramic insulating layer 12, and has several perforations 7, this is passed through
Conductive unit 8 is respectively provided in hole 7；And one or several wafer level packaging grade (CSP) light-emitting diode chip for backlight unit 2, the wafer level packaging
Grade (CSP) light-emitting diode chip for backlight unit 2 is set on the flexible base plate 1；Wherein, wafer level packaging grade (CSP) light-emitting diodes
The guide-connecting units 21 of tube chip 2 can be electrically connected with several conductive units 8 formation.
Further, the flexible base plate of light emitting diode construction of the invention more can optionally include cup body structure；
As shown in figure 8, wafer level packaging grade (CSP) light-emitting diode chip for backlight unit 2 is set in light emitting diode construction 700 of the invention
Among the cup body structure 5；And the light emitting diode construction 100 further includes fluorescence coating 6, covers on the flexible base plate 1, wraps
Cover wafer level packaging grade (CSP) light-emitting diode chip for backlight unit 2.
In this state sample implementation, the metal layer 11, ceramic insulating layer 12, wafer level packaging grade (CSP) light emitting diode
The light-emitting diodes of chip 2, conductive unit 21, perforation 7, conductive unit 8 and fluorescence coating 6 with first and second above-mentioned state sample implementation
Pipe structure 100 to 500.
In this state sample implementation, the cup body structure 5 can be the same as the cup body structure of above-mentioned first and two in state sample implementation
5, it the transparent colloids such as the barricade of general LED encapsulation body, such as silicon, resin are hardened can be used to be constituted, or such as
Shown in Fig. 9 A and Fig. 9 B, light emitting diode construction 800 of the invention be via by the flexible base plate 1 via envelope obtained by punching press
Close the cup body structure 5 of raised structures formation；Wherein, when the cup body structure 5 is obtained via punching press, two can shone
After pole pipe structural body completes sealing, directly it is split, to obtain light emitting diode.
Therefore the flexible base plate is coated by metal layer is peripheral for substrate in light emitting diode construction of the invention
Ceramic insulating layer, since metal layer and ceramic insulating layer have good thermal diffusivity, when wafer-level packaging (CSP) chip is sent out
When optical diode is arranged on, can improve existing wafer-level packaging (CSP) chip light emitting diode has heat flux excessively to concentrate,
Can not Homogeneouslly-radiating the problem of.Secondly, ceramic layer is used only as substrate compared with existing light emitting diode construction, material at
This height, the flexible base plate have preferable mechanical strength, can increase light emitting diode since metal layer has pliability
The variability of the appearance of structure, and then usability in increase industry, such as be used as and shine after light emitting diode construction being bent
Diode bulb filament.Also, light emitting diode construction of the invention, because using wafer-level packaging (CSP) chip as luminous core
Piece, therefore directly can attach (SMT) equipment using surface and wafer-level packaging (CSP) chip is arranged in the flexible base plate
On, it must complete the production, can be reduced in the operation equipment of the valuableness such as vacuum dust free room and bonder without such as flip-chip
Manufacturing cost.
Based on above-mentioned advantage, light emitting diode construction of the invention can be used for light emitting device, such as LED light lamp
The lighting devices such as bubble or light emitting diode filament.
The above has been described in detail, only as described above, a preferred embodiment only of the invention,
When that cannot be limited the scope of implementation of the present invention with this, i.e. equivalent changes and modifications made according to the patent scope of the present invention,
It should still belong in patent covering scope of the invention.
Claims (10)
1. a kind of light emitting diode construction, characterized by comprising:
One flexible base plate, which, which is by metal layer, is substrate and peripheral coating ceramic insulating layer, the pliability base
Plate is provided with several conductive electrodes；And
One or several wafer level packaging grade (CSP) light-emitting diode chip for backlight unit, wafer level packaging grade (CSP) light-emitting diode chip for backlight unit set
It is placed on the flexible base plate；
Wherein, several conductive electrodes of guide-connecting units and this formation of wafer level packaging grade (CSP) light-emitting diode chip for backlight unit is electrically connected
It connects.
2. light emitting diode construction as described in claim 1, which is characterized in that passed through on the flexible base plate with several
Hole is respectively provided with conductive unit in the perforation.
3. light emitting diode construction as claimed in claim 1 or 2, which is characterized in that the ceramic insulating layer with a thickness of 10 μm
To 400 μm.
4. light emitting diode construction as claimed in claim 1 or 2, which is characterized in that the flexible base plate further includes cup body knot
Structure, wafer level packaging grade (CSP) light-emitting diode chip for backlight unit are set among the cup body structure.
5. light emitting diode construction as claimed in claim 1 or 2, is characterized in that, one or several fluorescence coatings are further included,
It covers on the flexible base plate, coats wafer level packaging grade (CSP) light-emitting diode chip for backlight unit.
6. a kind of light emitting diode construction, characterized by comprising:
One flexible base plate, which, which is by metal layer, is substrate and peripheral coating ceramic insulating layer, and has several
A perforation is respectively provided with conductive unit in the perforation；And
One or several wafer level packaging grade (CSP) light-emitting diode chip for backlight unit, wafer level packaging grade (CSP) light-emitting diode chip for backlight unit set
It is placed on the flexible base plate；
Wherein, the guide-connecting units of wafer level packaging grade (CSP) light-emitting diode chip for backlight unit can form electricity with several conductive units
Connection.
7. light emitting diode construction as claimed in claim 6, which is characterized in that the ceramic insulating layer with a thickness of 10 μm extremely
400μm。
8. light emitting diode construction as claimed in claim 6, which is characterized in that the flexible base plate further includes cup body structure,
Wafer level packaging grade (CSP) light-emitting diode chip for backlight unit is set among the cup body structure.
9. the light emitting diode construction as described in claim 6 to 8 any one, which is characterized in that if further include one or
Dry fluorescence coating, covers on the flexible base plate, coats wafer level packaging grade (CSP) light-emitting diode chip for backlight unit.
10. a kind of light emitting device, which is characterized in that include light emitting diode knot as claimed in any one of claims 1 to 9
Structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810457384.8A CN110491865A (en) | 2018-05-14 | 2018-05-14 | Light emitting diode construction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810457384.8A CN110491865A (en) | 2018-05-14 | 2018-05-14 | Light emitting diode construction |
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|---|---|
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111029452A (en) * | 2019-12-10 | 2020-04-17 | 合肥彩虹蓝光科技有限公司 | Ultraviolet light emitting diode packaging structure and packaging method thereof, and ultraviolet lamp |
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| US20100102354A1 (en) * | 2008-10-23 | 2010-04-29 | Everlight Electronics Co., Ltd. | Light emitting diode package |
| CN102769090A (en) * | 2011-05-05 | 2012-11-07 | 隆达电子股份有限公司 | Light emitting module, light emitting unit and method of manufacturing the same |
| CN105428508A (en) * | 2015-12-02 | 2016-03-23 | 开发晶照明（厦门）有限公司 | Package substrate and LED flip-chip package structure |
| CN106029955A (en) * | 2013-11-15 | 2016-10-12 | 康桥纳诺塞姆有限公司 | Flexible electronic substrate |
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| US20100102354A1 (en) * | 2008-10-23 | 2010-04-29 | Everlight Electronics Co., Ltd. | Light emitting diode package |
| CN102769090A (en) * | 2011-05-05 | 2012-11-07 | 隆达电子股份有限公司 | Light emitting module, light emitting unit and method of manufacturing the same |
| CN106029955A (en) * | 2013-11-15 | 2016-10-12 | 康桥纳诺塞姆有限公司 | Flexible electronic substrate |
| CN105428508A (en) * | 2015-12-02 | 2016-03-23 | 开发晶照明（厦门）有限公司 | Package substrate and LED flip-chip package structure |
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| CN111029452A (en) * | 2019-12-10 | 2020-04-17 | 合肥彩虹蓝光科技有限公司 | Ultraviolet light emitting diode packaging structure and packaging method thereof, and ultraviolet lamp |
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