TW201130170A - Light emitting device, light emitting device package - Google Patents
Light emitting device, light emitting device packageInfo
- Publication number
- TW201130170A TW201130170A TW99145812A TW99145812A TW201130170A TW 201130170 A TW201130170 A TW 201130170A TW 99145812 A TW99145812 A TW 99145812A TW 99145812 A TW99145812 A TW 99145812A TW 201130170 A TW201130170 A TW 201130170A
- Authority
- TW
- Taiwan
- Prior art keywords
- light emitting
- emitting device
- device package
- package
- buffer layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20090132394A KR101181000B1 (ko) | 2009-12-29 | 2009-12-29 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201130170A true TW201130170A (en) | 2011-09-01 |
TWI442606B TWI442606B (zh) | 2014-06-21 |
Family
ID=43798256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW99145812A TWI442606B (zh) | 2009-12-29 | 2010-12-24 | 發光裝置及發光裝置封裝件 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9276175B2 (zh) |
EP (1) | EP2341559B1 (zh) |
JP (1) | JP2011139063A (zh) |
KR (1) | KR101181000B1 (zh) |
CN (1) | CN102148305B (zh) |
TW (1) | TWI442606B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI648850B (zh) * | 2017-10-16 | 2019-01-21 | 錼創顯示科技股份有限公司 | 微型發光元件結構 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101039939B1 (ko) * | 2010-04-28 | 2011-06-09 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법, 발광소자 패키지 및 이를 포함하는 조명시스템 |
WO2013063038A1 (en) * | 2011-10-24 | 2013-05-02 | Rosestreet Labs, Llc | Nitride uv light sensors on silicon substrates |
KR101288367B1 (ko) * | 2011-11-09 | 2013-07-22 | 포항공과대학교 산학협력단 | 백색광 발광 다이오드 및 그 제조방법 |
KR102015907B1 (ko) * | 2013-01-24 | 2019-08-29 | 삼성전자주식회사 | 반도체 발광소자 |
KR20160034534A (ko) | 2014-09-19 | 2016-03-30 | 삼성전자주식회사 | 반도체 발광 소자 |
WO2018199901A1 (en) * | 2017-04-24 | 2018-11-01 | Hewlett-Packard Development Company, L.P. | Micro light-emitting diode display with 3d orifice plating and light filtering |
KR102435409B1 (ko) * | 2018-01-04 | 2022-08-24 | 엘지전자 주식회사 | 반도체 발광소자를 이용한 디스플레이 장치 |
GB2592062B (en) * | 2020-02-14 | 2022-07-27 | Plessey Semiconductors Ltd | Enhanced colour conversion |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4501470A (en) * | 1981-09-28 | 1985-02-26 | Rockwell International Corporation | Christiansen-Bragg optical filter |
US4451470A (en) * | 1982-07-06 | 1984-05-29 | E. I. Du Pont De Nemours And Company | Analgesic, antagonist, and/or anorectic 14-fluoromorphinans |
JPH01160063A (ja) | 1987-12-16 | 1989-06-22 | Fujitsu Ltd | 発光素子 |
JPH05283735A (ja) | 1992-04-03 | 1993-10-29 | Eastman Kodak Japan Kk | 発光素子 |
JPH08236807A (ja) | 1995-02-24 | 1996-09-13 | Ricoh Co Ltd | 半導体発光素子及び半導体発光素子アレイチップ |
JP3239061B2 (ja) * | 1996-02-29 | 2001-12-17 | シャープ株式会社 | 発光ダイオード及びその製造方法 |
JP2001144321A (ja) * | 1999-11-04 | 2001-05-25 | Shurai Kagi Kofun Yugenkoshi | 発光素子及びその製造方法 |
JP2004031843A (ja) * | 2002-06-28 | 2004-01-29 | Kyocera Corp | 発光ダイオ−ド |
US20040159900A1 (en) | 2003-01-27 | 2004-08-19 | 3M Innovative Properties Company | Phosphor based light sources having front illumination |
KR100920348B1 (ko) | 2003-02-27 | 2009-10-07 | 삼성전자주식회사 | 액정 표시 장치 |
US20070267646A1 (en) * | 2004-06-03 | 2007-11-22 | Philips Lumileds Lighting Company, Llc | Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic |
US20080128727A1 (en) * | 2004-09-10 | 2008-06-05 | Luminus Devices, Inc. | Light recycling systems and methods |
EP1875781B1 (en) | 2005-04-20 | 2008-10-08 | Philips Intellectual Property & Standards GmbH | Illumination system comprising a ceramic luminescence converter |
JP4992311B2 (ja) * | 2006-06-16 | 2012-08-08 | ソニー株式会社 | 発光ダイオード搭載基板、発光ダイオードバックライト、発光ダイオード照明装置、発光ダイオードディスプレイおよび電子機器 |
TWI308401B (en) | 2006-07-04 | 2009-04-01 | Epistar Corp | High efficient phosphor-converted light emitting diode |
JP4976974B2 (ja) * | 2007-03-28 | 2012-07-18 | パナソニック株式会社 | 発光装置 |
JP2008283028A (ja) * | 2007-05-11 | 2008-11-20 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、面発光型半導体レーザの製造方法、モジュール、光源装置、情報処理装置、光送信装置、光空間伝送装置および光空間伝送システム。 |
JP2011507268A (ja) * | 2007-12-12 | 2011-03-03 | ニューポート コーポレーション | 性能が改善された光学的に被覆された半導体デバイス及び関連した製造方法 |
US8916890B2 (en) * | 2008-03-19 | 2014-12-23 | Cree, Inc. | Light emitting diodes with light filters |
KR101469979B1 (ko) | 2008-03-24 | 2014-12-05 | 엘지이노텍 주식회사 | 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법 |
EP2272102B1 (en) * | 2008-03-26 | 2016-06-22 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor light-emitting apparatus |
KR101438818B1 (ko) | 2008-04-01 | 2014-09-05 | 엘지이노텍 주식회사 | 발광다이오드 소자 |
-
2009
- 2009-12-29 KR KR20090132394A patent/KR101181000B1/ko active IP Right Grant
-
2010
- 2010-12-23 EP EP10196819.6A patent/EP2341559B1/en active Active
- 2010-12-24 TW TW99145812A patent/TWI442606B/zh active
- 2010-12-27 JP JP2010290002A patent/JP2011139063A/ja active Pending
- 2010-12-28 US US12/979,673 patent/US9276175B2/en not_active Expired - Fee Related
- 2010-12-29 CN CN201010621693.8A patent/CN102148305B/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI648850B (zh) * | 2017-10-16 | 2019-01-21 | 錼創顯示科技股份有限公司 | 微型發光元件結構 |
US10388825B2 (en) | 2017-10-16 | 2019-08-20 | Pixeled Display Co., Ltd. | Structure with micro light-emitting device |
Also Published As
Publication number | Publication date |
---|---|
US20110156073A1 (en) | 2011-06-30 |
KR101181000B1 (ko) | 2012-09-07 |
EP2341559B1 (en) | 2021-04-07 |
CN102148305A (zh) | 2011-08-10 |
KR20110075834A (ko) | 2011-07-06 |
CN102148305B (zh) | 2016-05-04 |
EP2341559A2 (en) | 2011-07-06 |
US9276175B2 (en) | 2016-03-01 |
JP2011139063A (ja) | 2011-07-14 |
TWI442606B (zh) | 2014-06-21 |
EP2341559A3 (en) | 2014-03-26 |
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