TW201129730A - Single crystal pulling apparatus and single crystal pulling method - Google Patents

Single crystal pulling apparatus and single crystal pulling method

Info

Publication number
TW201129730A
TW201129730A TW99143987A TW99143987A TW201129730A TW 201129730 A TW201129730 A TW 201129730A TW 99143987 A TW99143987 A TW 99143987A TW 99143987 A TW99143987 A TW 99143987A TW 201129730 A TW201129730 A TW 201129730A
Authority
TW
Taiwan
Prior art keywords
single crystal
crystal pulling
melt
convection
heat
Prior art date
Application number
TW99143987A
Other languages
English (en)
Inventor
Tomohiro Shonai
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW201129730A publication Critical patent/TW201129730A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW99143987A 2009-12-17 2010-12-15 Single crystal pulling apparatus and single crystal pulling method TW201129730A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009286157A JP2011126738A (ja) 2009-12-17 2009-12-17 単結晶引き上げ装置および単結晶引き上げ方法

Publications (1)

Publication Number Publication Date
TW201129730A true TW201129730A (en) 2011-09-01

Family

ID=44167285

Family Applications (1)

Application Number Title Priority Date Filing Date
TW99143987A TW201129730A (en) 2009-12-17 2010-12-15 Single crystal pulling apparatus and single crystal pulling method

Country Status (3)

Country Link
JP (1) JP2011126738A (zh)
TW (1) TW201129730A (zh)
WO (1) WO2011074533A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI476303B (zh) * 2013-03-20 2015-03-11 Lg Siltron Inc 藍寶石單晶生長的解釋方法以及藍寶石單晶的生長方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102732971A (zh) * 2012-07-16 2012-10-17 登封市蓝天石化光伏电力装备有限公司 晶体生长炉用发热装置及刚玉单晶生长炉
WO2014034081A1 (ja) 2012-08-26 2014-03-06 国立大学法人名古屋大学 結晶製造装置、ＳｉＣ単結晶の製造方法およびＳｉＣ単結晶
JP2014091670A (ja) * 2012-11-06 2014-05-19 Shin Etsu Handotai Co Ltd 単結晶製造装置
CN103422162A (zh) * 2013-09-03 2013-12-04 无锡鼎晶光电科技有限公司 一种生长方形蓝宝石的单晶炉热场结构
JP6167966B2 (ja) * 2014-03-28 2017-07-26 住友金属鉱山株式会社 はんだボールの製造方法及び製造装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60373U (ja) * 1983-06-17 1985-01-05 日本電気株式会社 単結晶引上装置
JP3121192B2 (ja) * 1993-12-27 2000-12-25 信越化学工業株式会社 酸化物単結晶の製造方法
JP2008007353A (ja) * 2006-06-28 2008-01-17 Sumitomo Metal Mining Co Ltd サファイア単結晶育成装置およびそれを用いた育成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI476303B (zh) * 2013-03-20 2015-03-11 Lg Siltron Inc 藍寶石單晶生長的解釋方法以及藍寶石單晶的生長方法

Also Published As

Publication number Publication date
WO2011074533A1 (ja) 2011-06-23
JP2011126738A (ja) 2011-06-30

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