201128821 EL98067 33084twf.doc/n 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種封裝結構及其製作方法，且特別 是有關於一種發光二極體封裝結構及其製作方法。 【先前技術】 發光二極體具有諸如壽命長、體積小、高抗震性、低 熱產生及低功率消耗等優點，因此已被廣泛應用於家用及 各，設?悄指示11或光源。近年來，發光二極體已朝多 色衫及南〶度發展，因此其應用領域已擴展至大型戶外看 板、交通號紐及_領域。在未來，發光二極體甚至可 能成為兼具省電轉保功朗主要㈣光源。 十制f知之發光二極體封裝結構是採用大量生產的方式 來製作，因此會先將扭捉 飞 發光二極體；與焊線5填人承的承載區以包覆 透丼的榭浐，以接者，在封裝膠體的周圍塗覆不 r . 9 /成所謂的反射結構。最後，再進行單^ 然而，由於反射結“成發光二極朗裝結構。 封裝結構時，發光摘反射結構之發光二極體 結構的阻擔㈣小，進^的出光角度勢必會受到反射 構的出光面積。進〜響所生產之發光二極體封裝結 【發明内容】 201128821 EL98067 33〇84twf.doc/n 法，種發光二極體封I結構及1 f作方 法/、了增加發光二極體晶片的出光角度。/、务乍方 本發明提出一種發光二極體封裝結 益、一發光二極體晶片、一封裝膠體以 括一承載 結構。承載哭呈Ug/ 非费閉的反射 承載以Λ及一環繞承載 :中周邊區具有彼此相對的一第—對側邊與—201128821 EL98067 33084twf.doc/n VI. Description of the Invention: [Technical Field] The present invention relates to a package structure and a method of fabricating the same, and more particularly to a light-emitting diode package structure and a method of fabricating the same. [Prior Art] The light-emitting diode has advantages such as long life, small volume, high shock resistance, low heat generation, and low power consumption, and thus has been widely used in homes and houses, and has a quiet indication 11 or a light source. In recent years, the light-emitting diode has developed towards multi-color shirts and south, so its application has expanded to large outdoor billboards, traffic numbers and _ fields. In the future, the light-emitting diodes may even become the main (four) light source that has both power-saving and transfer protection. The light-emitting diode package structure of the ten system is known to be produced by mass production. Therefore, the fly-light diode will be twisted and first; and the load-bearing area of the wire 5 is filled to cover the flaw. In the case of the package, the coating is applied around the encapsulant without a r. 9 / into a so-called reflective structure. Finally, the single step is performed. However, since the reflection junction is "into a light-emitting two-pole structure. When the package structure is used, the resistance of the light-emitting diode structure of the light-emitting reflex structure is small (four), and the light-emitting angle of the entrance is bound to be reflected. The light-emitting area is produced by the light-emitting diode package produced by the company. [Inventive content] 201128821 EL98067 33〇84twf.doc/n method, the light-emitting diode package I structure and the 1 f method/, the addition of the light-emitting two The light-emitting angle of the polar body wafer. The present invention provides a light-emitting diode package benefit, a light-emitting diode chip, and an encapsulation colloid to include a load-bearing structure. The load is crying Ug/ non-fee-closed reflection Carrying a raft and a surrounding load: the middle peripheral zone has a first-to-side side opposite to each other -
。發光二極體晶片配置於承載器的承龍且電性連接至 承載器。封裝膠體配置於承載器上，且包覆發光二極體晶 片與承載器的承載區。非密閉的反射結構配置於承載器^ 周邊區，且位於第一對側邊上，其中非密閉的反射結構定 義第二對側邊為一出光區。 Μ 在本發明之一實施例中，上述之承載器包括一電路板 或一導線腳架。 在本發明之一實施例中，上述之發光二極體封裝結構 更包括至少一焊線。發光二椏體晶片透過焊線與承載器 性連接。 Μ 在本發明之一實施例中，上述之封裝膠體的材質包括 一透光膠體。 在本發明之一實施例中，上述之非密閉的反射結構的 材質包括一不透光樹脂。 在本發明之一實施例中’上述之發光二極體晶片適於 發出一光束，且光束會經由出光區射出。 在本發明之一貫施例中，上述之周邊區的第一對側邊 沿著一第一軸線延伸，周邊區的第二對側邊沿著一第二軸 201128821 EL98067 33084tAvf.doc/n 線延伸。發光二極體晶片 .^ ± ^ 月在第—軸線上的出光角度大於其 在苐一轴線上的出光角度。 =明還提出-種發光二極體封裝結構的製作方 其2下述步驟。首先，提供-承載器。承載器包括 承载區與至少—環繞承載區的周邊區，其中周邊區 具有彼此相對的-第-對側邊與—第二對側邊。接著，配 置至少一發光二極體晶片於承載器的承載區，其中發光二 極體晶片與承載H電性連接。錢，形成_封裝膠體於承 載器上，以包覆發光二極體晶片與承載器的承載區。最後， 形成一非密閉的反射結構於承載器的周邊區，其中非密閉 的反射結構位於第一對側邊上，且非密閉的反射結構定義 第二對側邊為一出光區。 在本發明之一實施例中，上述之承載器包括一電路板 或一導線腳架。 在本發明之一實施例中，上述之形成封裝膠體於承載 益上之則，更包括形成至少一焊線。發光二極體晶片透過 焊線與承載器電性連接。 在本發明之一實施例中，上述之封裝膠體的材質包括 一透光膠體。 在本發明之一實施例中，上述之反射結構的材質包括 一不透光樹脂。 在本發明之一實施例中，上述之周邊區的第一對側邊 沿著一第一軸線延伸，周邊區的第二對側邊沿著一第二軸 線延伸。發光二極體晶片在第一軸線上的出光角度大於其 201128821 EL98067 33084twf.doc/n 在第二軸線上的出光角度。 器之====射結構於承載 區的第-對側邊以及第二對侧邊，以及沿==邊 :邊切除部分密閉的反射結構，以形成. The light emitting diode chip is disposed on the carrier of the carrier and electrically connected to the carrier. The encapsulant is disposed on the carrier and covers the carrying area of the LED and the carrier. The non-sealed reflective structure is disposed on the peripheral region of the carrier and is located on the first pair of sides, wherein the non-closed reflective structure defines the second pair of sides as a light exiting region. In one embodiment of the invention, the carrier includes a circuit board or a lead frame. In an embodiment of the invention, the LED package structure further includes at least one bonding wire. The light-emitting diode wafer is connected to the carrier through a bonding wire. In an embodiment of the invention, the material of the encapsulant comprises a transparent colloid. In an embodiment of the invention, the material of the non-sealed reflective structure comprises an opaque resin. In one embodiment of the invention, the above-described light-emitting diode chip is adapted to emit a light beam, and the light beam is emitted through the light exiting region. In a consistent embodiment of the present invention, the first pair of sides of the peripheral zone extends along a first axis, and the second pair of sides of the perimeter zone extends along a second axis 201128821 EL98067 33084tAvf.doc/n line . The light-emitting diode wafer .^ ± ^ month has an exit angle on the first axis greater than its exit angle on the first axis. = Ming also proposed - the production of a light-emitting diode package structure 2 steps. First, provide a carrier. The carrier includes a load bearing zone and at least a peripheral zone surrounding the load bearing zone, wherein the peripheral zone has opposite sides - a pair of sides and a second pair of sides. Next, at least one light emitting diode chip is disposed on the carrying area of the carrier, wherein the light emitting diode chip is electrically connected to the carrier H. The money is formed on the carrier to cover the load-bearing area of the light-emitting diode wafer and the carrier. Finally, a non-hermetic reflective structure is formed on the peripheral region of the carrier, wherein the non-hermetic reflective structure is on the first pair of side edges, and the non-hermetic reflective structure defines the second pair of side edges as a light exiting region. In an embodiment of the invention, the carrier includes a circuit board or a lead frame. In an embodiment of the invention, the forming of the encapsulant on the package further comprises forming at least one bonding wire. The LED chip is electrically connected to the carrier through a bonding wire. In an embodiment of the invention, the material of the encapsulant comprises a transparent colloid. In an embodiment of the invention, the material of the reflective structure comprises an opaque resin. In an embodiment of the invention, the first pair of sides of the peripheral zone extend along a first axis, and the second pair of sides of the perimeter zone extend along a second axis. The light-emitting diode wafer has a light-emitting angle on the first axis greater than the light-emitting angle of the second axis on the 201128821 EL98067 33084twf.doc/n. The ==== shot structure is on the first pair of sides of the load-bearing area and the second pair of sides, and along the == side: the edge is cut off by a partially closed reflective structure to form
實施例中，上述之形成反射結構於承載 二上之喪’更包括沿著周邊區的第—對側邊以及第二對側 ，來切割承載器與非密閉的反射結構，以形成多個具有非 後閉的反射結構的發光二極體封裝單元。 …基於上述’由於本發明讀％三極體封裝結構的設計 疋抓用非密閉之反射結構，因此可有效增加發光二極體晶 片的出光角度。此外，本發明透過簡單的切割製程來使密 閉的反射結構變成非密閉的反射結構，如此—來，可簡化 製程步驟以達成增加發光二極體晶片之出光角度以及可降 低生產成本。 —為讓本發明之土述特徵和優點能更明顯易懂，下文特 舉實施例，並配合所附圖式作詳細說明如下。 【實施方式】 圖1為本發明之一實施例之一種發光二極體封裝結構 的立體示意圖。請參考圖丨，在本實施例中，發光二極體 封裝結構100包括一承載器11〇、一發光二極體晶片120、 一封裝膠體130以及一非密閉的反射結構14〇。 201128821 EL98067 33084twf.doc/n 詳細而言’承載器11〇具有一承栽區ii2以及U 承載區112的周邊區114。周邊區114具有彼此相對的一 第-對側邊114a與-第二對側邊⑽。其中，周邊區114 的第-對側邊114a適於沿著―第—㈣幻延伸，而周邊 區114的第二對側邊lUb適於沿著—第二轴線:R2延伸。 在本實施例中’第-轴線R1實質上垂直第二轴線们。此 外，承載器110例如是一電路板或—導線腳架。 發光二極體晶片12G配置於承载器m的承載區112 且電性連接至承載H H0。特別是，在本實_中，發光 二極體晶片12G是透過至少-焊線15()與承魅11〇電性 連接。當然’本發概定魏二極體晶片m與承載 态110電性連接的方式，發光二極體晶片120與承栽器 亦可透過其他適當的方式來電性連接，因此上述僅為舉 說明，並不以此為限。 牛1 封裝膠體130配置於承載器110上，且封裝膠艘 包覆發光二極體晶片120與承載器11〇的承載區11之 得一提的是’當承載器110例如為一導電腳架時，封麥^ 體130亦會包覆導電腳架的底部，意即承載區112的背面多 此外’在本實施例中’封裝膠體130的材質例如是_ 膠體。 、 透光 非密閉的反射結構140配置於承載器110的周邊區 1Μ且位於第一對侧邊1 i4a上，其中非密閉的反射結構 定義第二對側邊114b為一出光區R。在本實施例中，發光 二極體晶片120適於發出一光束，且此光束會經由出光區 201128821 EL98067 33084twf.doc/n R射出。此外，非密閉的反射結構14〇的材質例如是一 透光樹脂。 $In an embodiment, the forming the reflective structure on the carrier 2 further includes a first pair of sides along the peripheral region and a second opposite side to cut the carrier and the non-hermetic reflective structure to form a plurality of A light emitting diode package unit having a non-back-closed reflective structure. Based on the above, the design of the % triode package structure of the present invention utilizes a non-sealed reflective structure, thereby effectively increasing the light exit angle of the light-emitting diode wafer. In addition, the present invention allows the closed reflective structure to be turned into a non-hermetic reflective structure by a simple cutting process, so that the process steps can be simplified to increase the light exit angle of the light-emitting diode wafer and reduce the production cost. In order to make the features and advantages of the present invention more comprehensible, the following detailed description of the embodiments and the accompanying drawings are set forth below. Embodiments Fig. 1 is a perspective view showing a light emitting diode package structure according to an embodiment of the present invention. Referring to the figure, in the embodiment, the LED package structure 100 includes a carrier 11 , a LED chip 120 , an encapsulant 130 , and a non-hermetic reflective structure 14 . 201128821 EL98067 33084twf.doc/n In detail, the carrier 11 has a receiving area ii2 and a peripheral area 114 of the U carrying area 112. The peripheral zone 114 has a first pair of side edges 114a and a second pair of side edges (10) opposite each other. Wherein, the first pair of side edges 114a of the peripheral zone 114 are adapted to extend along the "--fourth", and the second pair of side edges 1Ub of the peripheral zone 114 are adapted to extend along the second axis: R2. In the present embodiment, the 'first axis R1' is substantially perpendicular to the second axis. In addition, the carrier 110 is, for example, a circuit board or a wire stand. The LED chip 12G is disposed on the carrying area 112 of the carrier m and electrically connected to the carrying H H0 . In particular, in the present embodiment, the light-emitting diode chip 12G is electrically connected to the glare 11 透过 through at least the bonding wire 15 (). Of course, the present invention is intended to electrically connect the diode package m to the carrier 110. The LED chip 120 and the carrier can also be electrically connected by other suitable means. Not limited to this. The package 1 of the package 1 is disposed on the carrier 110, and the package of the packaged package 120 and the carrier 11 of the carrier 11 is said to be 'when the carrier 110 is a conductive stand, for example. At the same time, the sealing body 130 also covers the bottom of the conductive tripod, that is, the back surface of the carrying area 112 is more than 'in this embodiment', the material of the encapsulating body 130 is, for example, a colloid. The light-transmissive non-sealed reflective structure 140 is disposed on the peripheral region 1 of the carrier 110 and on the first pair of side edges 1 i4a, wherein the non-hermetic reflective structure defines the second pair of side edges 114b as a light exit region R. In the present embodiment, the LED chip 120 is adapted to emit a light beam which is emitted through the light exit region 201128821 EL98067 33084twf.doc/n R . Further, the material of the non-sealed reflective structure 14 is, for example, a light-transmitting resin. $
由於本實施例之發光二極體封裝結構100的設計是採 用非岔閉之反射結構140，因此當發光二極體晶片丨於 出光束時，此光束在第一軸線R1上的出光角度大於在^ 二，線:R2上的出光角度。也就是說，發光二極體晶片 在第一軸線R1上之出光角度因不受非密閉的反射結 140的影響，故其範圍較大，例如發光二極體晶片12〇的 出光角度為130度至150度，而發光二極體晶片12〇在第 二轴線R2上之出光肖度因受限於非密關反射結構 念衫響，故其範圍較小，例如發光二極體晶片的 射U〇度至120度。換言之’本實施例之非密閉的反 I構140的設計，除了可有效地增加發Since the LED package structure 100 of the present embodiment is designed to use the non-closed reflective structure 140, when the LED chip is emitted from the beam, the beam has a larger angle of light on the first axis R1 than ^ Second, line: the angle of light on R2. That is to say, the light-emitting diode wafer has a light-emitting angle on the first axis R1 that is not affected by the non-sealed reflective junction 140, so that the range is large, for example, the light-emitting diode wafer 12 has an exit angle of 130 degrees. Up to 150 degrees, and the light output of the light-emitting diode chip 12 on the second axis R2 is limited by the non-closed-off structure, so the range is small, for example, the light-emitting diode wafer is shot. U twist to 120 degrees. In other words, the design of the non-closed anti-structure 140 of the present embodiment can effectively increase the transmission.
白出光角度外，意即較佳地可增加W4Q 介發f之發光二_封裝結構觸，.並未 下：圖體封裝結構的製作方法。對此，以 並配人二2Α 51 極體封裝結才4 1〇0作為舉例說明， 作本發明的發—裝結構的製 封裂明之—實施例之—種發光二極體 二极體封。依照本實施例之發光 。、衣作方法，首先，請先參考圖2A，提供 201128821 EL98067 33084twf.doc/n -承載器m。承載器no包括至少—承載區ii2盥 -環繞承雜m的周輕m，其巾周輕iu轉 此相對的-第-對側邊114a與-第二對側邊⑽。在本 實施例中，周邊區1 μ的第一對側邊丨14a適於沿著一 軸線Rm伸，而周邊區114的第二對側邊心適 -第二軸線R2延伸’其中第一軸線幻實質上垂直第二輛 線R2。此外’承載器110例如是„電路板或—導線腳竿。 接著，請參考圖2B，配置至少一發光二極體晶片12〇 於承載器no的承載區U2。接著，請再參相2β，形成 至少-焊線15〇’其中發光二極體晶片⑽透過焊線15〇 與承載器1H)電性連接。當，然，本發明並不限定發光二極 體晶片120與承載器110電性連接的方式，發光二極體晶 片120與承載器110亦可透過其他適當的方式來電性連 接，因此上述僅為舉例說明，並不以此為限。 接著，請參考圖2C，形成一封裝膠體13〇承載哭 …上，其中封裝膠體130咖二極體晶片二; 載器110的承載區112。值得一提的是，當承載器11〇例 如為:導電腳㈣’封裝膠體13G亦會包覆導電腳架的底 部，意即承載區112的背面。此外，封裝膠體13〇的材質 例如是一透光膠體。 接著，請參考圖2D，形成一密閉的反射結構14〇&於 周邊區114的第一對側邊U4a以及第二對側邊U4b，意 即密閉的反射結構140a環繞封裝膠體13〇的外圍設置。 接著，請同時參考圖2D與圖2E，沿著周邊區114的 10 201128821 EL98067 33〇84twf.doc/n 第二對側邊114b切除部分密閉的反射結構14〇a，以形成 一非密閉的反射結構140。也就是說，沿著周邊區114上 的切割線Cl、C2來切割位於第二對側邊ll4b上的密閉的 反射結構140a，以使周邊區114的第二對側邊U4b上無 習知之反射結構。 —特別是，由於第二對側邊114b習知之反射結構，因In addition to the white light angle, it means that the W4Q can be added to the light-emitting package of the package, which is not the following: the method of fabricating the package structure. In this regard, the galvanic diode package of the present invention is exemplified by a pair of 2 Α 51 pole body package junctions. . Illumination in accordance with this embodiment. , clothing method, first, please refer to Figure 2A first, provide 201128821 EL98067 33084twf.doc / n - carrier m. The carrier no comprises at least a load-bearing zone ii2 盥 - a circumferential light m surrounding the load-carrying m, the circumference of which is turned to the opposite - first-to-side side 114a and - second pair of sides (10). In the present embodiment, the first pair of side turns 14a of the peripheral region 1 μ are adapted to extend along an axis Rm, and the second pair of side edges of the peripheral zone 114 are adapted to - the second axis R2 extends 'where the first axis The magic is essentially perpendicular to the second line R2. In addition, the carrier 110 is, for example, a circuit board or a wire pedal. Next, referring to FIG. 2B, at least one LED chip 12 is disposed on the carrier U2 of the carrier no. Then, please participate in the phase 2β. Forming at least a bonding wire 15〇' wherein the light emitting diode chip (10) is electrically connected to the carrier 1H through the bonding wire 15A. When the present invention does not limit the electrical conductivity of the LED chip 120 and the carrier 110 In the manner of connection, the LED chip 120 and the carrier 110 can also be electrically connected by other suitable means. Therefore, the above is only an example and is not limited thereto. Next, please refer to FIG. 2C to form an encapsulant. 13〇 carrying crying...up, in which the encapsulating colloid 130 is a two-pole wafer 2; the carrying area 112 of the carrier 110. It is worth mentioning that when the carrier 11 is, for example, a conductive leg (4), the encapsulating colloid 13G will also be packaged. The bottom of the conductive tripod, that is, the back surface of the carrying area 112. In addition, the material of the encapsulant 13〇 is, for example, a transparent colloid. Next, referring to FIG. 2D, a closed reflective structure 14〇 is formed in the surrounding area. The first pair of sides U4a of 114 The second pair of side edges U4b, that is, the closed reflective structure 140a is disposed around the periphery of the encapsulant 13A. Next, please refer to FIG. 2D and FIG. 2E simultaneously, along the peripheral area 114, 10 201128821 EL98067 33〇84twf.doc/n The second pair of side edges 114b cuts off the partially sealed reflective structure 14〇a to form a non-hermetic reflective structure 140. That is, the cutting along the cutting lines C1, C2 on the peripheral region 114 is cut on the second pair of sides. The closed reflective structure 140a on ll4b is such that there is no conventional reflective structure on the second pair of sides U4b of the peripheral region 114. In particular, due to the conventional reflective structure of the second pair of sides 114b,
士藉由非密閉的反射結構140的配置可定義周邊區114的 第一對側邊114b為一出光區R。此外，在本實施例中，發 光二極體晶片12G適於發出-絲，且此光束會經由出^ 區R射出。切割線ci實質上平行切割線C2，而密閉的反 射結構140 (或非密f相反射結構14〇a)㈣質例如是一 不透光樹脂。 然後，請同時參考圖2E與圖2F，沿著周邊區114的 第一=側邊114a以及第二對侧邊U4b來切割承載器11〇 與非岔閉的反射結構14Q，以形成多個具有非密閉的反射 了構14G的發光二極體封裝單元丨⑽a。也就是說，沿著切 =線 C3、C4、C5、C6 來進行一單體化（singulati〇n)的 以形成個自獨立且具有非密閉的反射結構14〇的發 ^極體封裝單元_。其中’ _線C3與切割線C4 =ΐΓ彳7 ’，割線C5與切割線C6實質上平行，且切 只質上垂直於切割線C5、C6。至此，已完成 心先一極肢·封裝結構的製作。 切到例之發光二極體封裝結構的製作方法是採用 °工，以於周邊區114的第一對側邊114a上形成非 201128821 EL98067 33084twf.doc/n 密閉的反射結構140。因此，當發光二極體晶片12〇發出 光束時，此光束在第一軸線R1上的出光角度大於在第二 轴線R2上的出光角度。也就是說，發光二極體晶片12〇 在第一軸線R1上之出光角度，例如發光二極體晶片12〇 的出光角度為130度至150度，大於其在第二轴線R2上 的出光角度，例如發光二極體晶片12〇的出光角度為11〇 度至120度。如此一來，除了可有效地增加發光二極體晶 片120的出光角度外，較佳地可增加1〇度至4〇度，亦可 有效增加發光二極體封裝結構1〇〇之側邊（意即周邊區 的第二對側邊114b)的出光面積。 曰綵上所述，由於本發明之發光二極體封裝結構的設計 疋採用非岔閉之反射結構，因此可有效增加發光二極體晶 片的出光角度。此外，本發明透過簡單的切割製程來使密 閉的反射結構變成非密閉的反射結構，如此—來，可簡化 製程步驟以達成增加發光二極體晶片之出 低生產成本。 降 雖然本發明已以實施例揭露如上，然其並非用以限定 til’任何所屬技術領域中具有通常知識者，在不脫離 =月之精神和範圍内，當可作些許之更動與潤_，故本 %明之保護範圍當視後社申料職晴界定者為準。 【圖式簡單說明】 圖1為本發明 的立體示意圖。 之一實施例之一種發光二極體封裝結構 12 201128821 EL98067 33084twf.doc/n 圖2A至圖2F為本發明之一實施例之一種發光二極體 封裝結構的製作方法的流程示意圖。 【主要元件符號說明】 100 :發光二極體封裝結構 l〇〇a :發光二極體封裝單元 110 :承載器 il·The first pair of side edges 114b of the peripheral region 114 can be defined as a light exit region R by the configuration of the non-hermetic reflective structure 140. Further, in the present embodiment, the light-emitting diode wafer 12G is adapted to emit a filament, and this light beam is emitted through the exit region R. The cutting line ci is substantially parallel to the cutting line C2, and the hermetic reflecting structure 140 (or the non-dense f-phase reflecting structure 14a) (4) is, for example, an opaque resin. Then, referring to FIG. 2E and FIG. 2F, the carrier 11〇 and the non-closed reflective structure 14Q are cut along the first=side 114a and the second pair of sides U4b of the peripheral zone 114 to form a plurality of The non-sealed reflective light-emitting diode package unit 丨(10)a of 14G is formed. That is to say, a single singulating package is formed along the tangent lines C3, C4, C5, and C6 to form a self-contained and non-sealed reflective structure 14? . Wherein the '_line C3 and the cutting line C4 = ΐΓ彳7', the secant line C5 is substantially parallel to the cutting line C6, and is cut perpendicularly to the cutting lines C5, C6. So far, the production of the first pole and the package structure has been completed. The illuminating diode package structure is exemplified by forming a non-201128821 EL98067 33084 twf.doc/n closed reflective structure 140 on the first pair of side edges 114a of the peripheral region 114. Therefore, when the light-emitting diode wafer 12 emits a light beam, the light-emitting angle of the light beam on the first axis R1 is larger than the light-emitting angle on the second axis R2. That is, the light exiting angle of the light emitting diode chip 12 on the first axis R1, for example, the light emitting diode 12 〇 has an exit angle of 130 degrees to 150 degrees, which is greater than its light output on the second axis R2. The angle, such as the light-emitting diode wafer 12, has an exit angle of 11 to 120 degrees. In this way, in addition to effectively increasing the light-emitting angle of the LED chip 120, it is preferable to increase the thickness of the light-emitting diode package by 1 to 4 degrees, and the side of the light-emitting diode package structure can be effectively increased ( That is, the light-emitting area of the second pair of side edges 114b) of the peripheral zone. As described in the enamel, since the design of the light-emitting diode package structure of the present invention uses a non-closed reflective structure, the light-emitting diode wafer can be effectively increased in light-emitting angle. In addition, the present invention allows the closed reflective structure to be turned into a non-hermetic reflective structure by a simple dicing process, which simplifies the process steps to achieve an increased production cost of the luminescent diode wafer. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the general knowledge of any of the art in the art, and may be modified and manipulated without departing from the spirit and scope of the month. Therefore, the scope of protection of this Participant shall be subject to the definition of the post-operative job registration. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view of the present invention. A light emitting diode package structure of one embodiment 12 201128821 EL98067 33084twf.doc/n FIG. 2A to FIG. 2F are schematic flowcharts showing a method of fabricating a light emitting diode package structure according to an embodiment of the present invention. [Main component symbol description] 100: LED package structure l〇〇a: LED package unit 110: Carrier il·
112 :承載區 114 :周邊區 114a :第一對側邊 114b :第二對側邊 120 :發光二極體晶片 130 :封裝膠體 140 :非密閉的反射結構 140a :密閉的反射結構 150 :焊線 C1〜C6 :切割線 R :出光區 R1 :第一軸線 R2 :第二軸線 13112: bearing area 114: peripheral area 114a: first pair of side edges 114b: second pair of side 120: light emitting diode wafer 130: encapsulant 140: non-sealed reflective structure 140a: hermetic reflective structure 150: bonding wire C1 to C6: cutting line R: light exiting area R1: first axis R2: second axis 13