TWI403007B - Light emitting package structure and manufacturing method thereof - Google Patents

Description

Light-emitting diode package structure and manufacturing method thereof

The present invention relates to a package structure and a method of fabricating the same, and more particularly to a light emitting diode package structure and a method of fabricating the same.

The light-emitting diode has advantages such as long life, small volume, high shock resistance, low heat generation, and low power consumption, and thus has been widely used as an indicator or a light source in households and various devices. In recent years, light-emitting diodes have developed toward multiple colors and high brightness, so their application fields have expanded to large outdoor billboards, traffic lights and related fields. In the future, light-emitting diodes may even become the main source of illumination for both power saving and environmental protection functions.

The conventional LED package structure is fabricated by mass production, so the encapsulant is first filled into the carrying area of the carrier to cover the LED wafer and the bonding wire. Next, an opaque resin is applied around the encapsulant to form a so-called reflective structure. Finally, a singulation cutting process is performed to complete the light emitting diode package structure. However, since the reflective structure is a hermetic structure, when the light-emitting diode package is cut along the reflective structure to form a closed reflective structure, the light-emitting diode wafer is exposed to the reflective structure. The blocking becomes smaller, which in turn affects the light-emitting area of the produced LED package structure.

The invention provides a light emitting diode package structure and a manufacturing method thereof, which can increase the light exit angle of the light emitting diode chip.

The invention provides a light emitting diode package structure comprising a carrier, a light emitting diode chip, an encapsulant and a non-sealed reflective structure. The carrier has a load bearing area and a peripheral area surrounding the load bearing area, wherein the peripheral area has a first pair of side edges and a second pair of side edges opposite to each other. The light emitting diode chip is disposed on the carrying area of the carrier and electrically connected to the carrier. The encapsulant is disposed on the carrier and covers the light-emitting diode wafer and the carrying area of the carrier. The non-closed reflective structure is disposed on the peripheral region of the carrier and is located on the first pair of sides, wherein the non-closed reflective structure defines the second pair of sides as a light exiting region.

In an embodiment of the invention, the carrier includes a circuit board or a lead frame.

In an embodiment of the invention, the LED package structure further includes at least one bonding wire. The LED chip is electrically connected to the carrier through the bonding wire.

In an embodiment of the invention, the material of the encapsulant comprises a transparent colloid.

In an embodiment of the invention, the material of the non-sealed reflective structure comprises an opaque resin.

In an embodiment of the invention, the light emitting diode chip is adapted to emit a light beam, and the light beam is emitted through the light exiting region.

In an embodiment of the invention, the first pair of sides of the peripheral zone extend along a first axis, and the second pair of sides of the perimeter zone extend along a second axis. The light-emitting diode wafer has an exit angle on the first axis that is greater than its exit angle on the second axis.

The invention also provides a method for fabricating a light emitting diode package structure, which comprises the following steps. First, a carrier is provided. The carrier includes at least one load bearing area and at least one peripheral area surrounding the load bearing area, wherein the peripheral area has a first pair of side edges and a second pair of side edges opposite to each other. Next, at least one light emitting diode chip is disposed on the carrying area of the carrier, wherein the light emitting diode chip is electrically connected to the carrier. Then, an encapsulant is formed on the carrier to cover the light-emitting diode wafer and the carrying area of the carrier. Finally, a non-sealed reflective structure is formed on the peripheral region of the carrier, wherein the non-hermetic reflective structure is located on the first pair of side edges, and the non-hermetic reflective structure defines the second pair of side edges as a light exiting region.

In an embodiment of the invention, the carrier includes a circuit board or a lead frame.

In an embodiment of the invention, before forming the encapsulant on the carrier, the method further comprises forming at least one bonding wire. The LED chip is electrically connected to the carrier through the bonding wire.

In an embodiment of the invention, the material of the encapsulant comprises a transparent colloid.

In an embodiment of the invention, the material of the reflective structure comprises an opaque resin.

In an embodiment of the invention, the first pair of sides of the peripheral zone extend along a first axis, and the second pair of sides of the perimeter zone extend along a second axis. The light-emitting diode wafer has an exit angle on the first axis that is greater than its exit angle on the second axis.

In an embodiment of the invention, the step of forming the reflective structure on the peripheral region of the carrier comprises: forming a closed reflective structure on the first pair of sides and the second pair of sides of the peripheral region, and along The second pair of side edges of the peripheral region cuts off the partially sealed reflective structure to form a non-hermetic reflective structure.

In an embodiment of the invention, after forming the reflective structure on the carrier, the method further includes cutting the carrier and the non-sealed reflective structure along the first pair of sides and the second pair of sides of the peripheral region to A plurality of light emitting diode package units having a non-hermetic reflective structure are formed.

Based on the above, since the design of the light-emitting diode package structure of the present invention is a non-closed reflective structure, the light-emitting angle of the light-emitting diode wafer can be effectively increased. In addition, the present invention can make the sealed reflective structure into a non-closed reflective structure through a simple cutting process, thereby simplifying the process steps to achieve an increase in the light-emitting angle of the light-emitting diode wafer and a reduction in production cost.

The above described features and advantages of the present invention will be more apparent from the following description.

FIG. 1 is a perspective view of a light emitting diode package structure according to an embodiment of the invention. Referring to FIG. 1 , in the embodiment, the LED package structure 100 includes a carrier 110 , a LED chip 120 , an encapsulant 130 , and a non-hermetic reflective structure 140 .

In detail, the carrier 110 has a load bearing area 112 and a peripheral area 114 surrounding the load carrying area 112. The peripheral zone 114 has a first pair of sides 114a and a second pair of sides 114b opposite each other. Wherein the first pair of side edges 114a of the peripheral zone 114 are adapted to extend along a first axis R1 and the second pair of side edges 114b of the perimeter zone 114 are adapted to extend along a second axis R2. In the present embodiment, the first axis R1 is substantially perpendicular to the second axis R2. In addition, the carrier 110 is, for example, a circuit board or a lead frame.

The LED chip 120 is disposed on the carrying area 112 of the carrier 110 and electrically connected to the carrier 110. In particular, in the present embodiment, the LED chip 120 is electrically connected to the carrier 110 through at least one bonding wire 150. Of course, the present invention does not limit the manner in which the LED chip 120 is electrically connected to the carrier 110. The LED chip 120 and the carrier 110 can also be electrically connected by other suitable means. Therefore, the above is only an example. Not limited to this.

The encapsulant 130 is disposed on the carrier 110 , and the encapsulant 130 covers the LED substrate 120 and the carrying region 112 of the carrier 110 . It is worth mentioning that when the carrier 110 is, for example, a conductive stand, the encapsulant 130 also covers the bottom of the conductive stand, that is, the back of the carrying area 112. In addition, in the embodiment, the material of the encapsulant 130 is, for example, a light-transmitting colloid.

The non-sealed reflective structure 140 is disposed on the peripheral region 114 of the carrier 110 and on the first pair of side edges 114a, wherein the non-hermetic reflective structure 140 defines the second pair of side edges 114b as a light exit region R. In the present embodiment, the light emitting diode chip 120 is adapted to emit a light beam, and the light beam is emitted through the light exiting region R. Further, the material of the non-sealed reflective structure 140 is, for example, an opaque resin.

Since the LED package structure 100 of the present embodiment is designed to adopt a non-sealed reflective structure 140, when the light emitting diode chip 120 emits a light beam, the light beam has a light exit angle on the first axis R1 that is greater than that in the second The angle of light exiting the axis R2. That is to say, the light exiting angle of the LED array 120 on the first axis R1 is not affected by the non-sealed reflective structure 140, so the range is large. For example, the light emitting diode 120 has an exit angle of 130 degrees. Up to 150 degrees, and the light exiting angle of the LED array 120 on the second axis R2 is limited by the non-sealed reflective structure 140, so the range is small, for example, the light exiting angle of the LED wafer 120 is 110 degrees to 120 degrees. In other words, the design of the non-sealed reflective structure 140 of the present embodiment can increase the light-emitting angle of the light-emitting diode chip 120, which means that the light-emitting diode 120 can be increased by 10 to 40 degrees, and the light-emitting diode can be effectively increased. The light exit area of the side of the pole package structure 100 (ie, the second pair of sides 114b).

Only the light-emitting diode package structure 100 of the present invention is described above, and the method of fabricating the light-emitting diode package structure of the present invention is not described. In this regard, the light-emitting diode package structure 100 of FIG. 1 will be exemplified below, and the manufacturing method of the light-emitting diode package structure of the present invention will be described in detail with reference to FIGS. 2A to 2F.

2A-2F are schematic flow charts of a method for fabricating a light emitting diode package structure according to an embodiment of the invention. According to the manufacturing method of the LED package structure of the present embodiment, first, referring to FIG. 2A, a carrier 110 is provided. The carrier 110 includes at least one load bearing area 112 and at least one peripheral area 114 surrounding the load bearing area 112, wherein the peripheral area 114 has a first pair of side edges 114a and a second pair of side edges 114b opposite to each other. In the present embodiment, the first pair of side edges 114a of the peripheral zone 114 are adapted to extend along a first axis R1, and the second pair of side edges 114b of the perimeter zone 114 are adapted to extend along a second axis R2, wherein The first axis R1 is substantially perpendicular to the second axis R2. In addition, the carrier 110 is, for example, a circuit board or a lead frame.

Next, referring to FIG. 2B , at least one LED wafer 120 is disposed on the carrying region 112 of the carrier 110 . Next, referring to FIG. 2B, at least one bonding wire 150 is formed, wherein the LED chip 120 is electrically connected to the carrier 110 through the bonding wire 150. Of course, the present invention does not limit the manner in which the LED chip 120 is electrically connected to the carrier 110. The LED chip 120 and the carrier 110 can also be electrically connected by other suitable means. Therefore, the above is only an example. Not limited to this.

Next, referring to FIG. 2C , an encapsulant 130 is formed on the carrier 110 , wherein the encapsulant 130 covers the LED substrate 120 and the carrying region 112 of the carrier 110 . It is worth mentioning that when the carrier 110 is, for example, a conductive stand, the encapsulant 130 also covers the bottom of the conductive stand, that is, the back of the carrying area 112. In addition, the material of the encapsulant 130 is, for example, a light-transmitting colloid.

Next, referring to FIG. 2D, a sealed reflective structure 140a is formed on the first pair of side edges 114a and the second pair of side edges 114b of the peripheral region 114, that is, the sealed reflective structure 140a is disposed around the periphery of the encapsulant 130.

Next, referring to FIG. 2D and FIG. 2E simultaneously, a portion of the sealed reflective structure 140a is cut along the second pair of side edges 114b of the peripheral region 114 to form a non-hermetic reflective structure 140. That is, the closed reflective structures 140a on the second pair of side edges 114b are cut along the cutting lines C1, C2 on the peripheral region 114 such that there is no conventional reflection on the second pair of side edges 114b of the peripheral region 114. structure.

In particular, due to the conventional reflective structure of the second pair of side edges 114b, the second pair of side edges 114b of the peripheral region 114 can be defined as a light exit region R by the configuration of the non-hermetic reflective structure 140. Further, in the present embodiment, the light emitting diode chip 120 is adapted to emit a light beam, and the light beam is emitted through the light exiting region R. The cutting line C1 is substantially parallel to the cutting line C2, and the material of the sealed reflecting structure 140 (or the non-sealed reflecting structure 140a) is, for example, an opaque resin.

Then, referring to FIG. 2E and FIG. 2F, the carrier 110 and the non-sealed reflective structure 140 are cut along the first pair of side edges 114a and the second pair of side edges 114b of the peripheral region 114 to form a plurality of non-hermetic structures. The light emitting diode package unit 100a of the reflective structure 140. That is, a singulation process is performed along the dicing lines C3, C4, C5, and C6 to form a light emitting diode package unit 100a that is self-contained and has a non-sealed reflective structure 140. Wherein, the cutting line C3 is substantially parallel to the cutting line C4, and the cutting line C5 is substantially parallel to the cutting line C6, and the cutting lines C3, C4 are substantially perpendicular to the cutting lines C5, C6. So far, the fabrication of the light-emitting diode package structure has been completed.

The LED package structure of the present embodiment is formed by cutting to form a non-sealed reflective structure 140 on the first pair of side edges 114a of the peripheral region 114. Therefore, when the light-emitting diode wafer 120 emits a light beam, the light-emitting angle of the light beam on the first axis R1 is greater than the light-emitting angle on the second axis R2. That is, the light-emitting diode 120 has an exit angle on the first axis R1, for example, the light-emitting diode 120 has an exit angle of 130 to 150 degrees, which is greater than its light-emitting angle on the second axis R2, for example. The light emitting diode 120 has an exit angle of 110 to 120 degrees. In this way, in addition to effectively increasing the light exit angle of the LED chip 120, it is preferably increased by 10 to 40 degrees, and the side of the LED package 100 can be effectively increased (ie, the peripheral region). The light exit area of the second pair of sides 114b) of 114.

In summary, since the LED package structure of the present invention is designed to adopt a non-closed reflective structure, the light-emitting diode wafer can be effectively increased in light-emitting angle. In addition, the present invention can make the sealed reflective structure into a non-closed reflective structure through a simple cutting process, thereby simplifying the process steps to achieve an increase in the light-emitting angle of the light-emitting diode wafer and a reduction in production cost.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

100‧‧‧Light emitting diode package structure

100a‧‧‧Light Emitting Diode Unit

110‧‧‧carrier

112‧‧‧ Carrying area

114‧‧‧The surrounding area

114a‧‧‧ first pair of sides

114b‧‧‧ second pair of sides

120‧‧‧Light Emitter Wafer

130‧‧‧Package colloid

140‧‧‧Non-closed reflective structure

140a‧‧‧Closed reflective structure

150‧‧‧welding line

C1~C6‧‧‧ cutting line

R‧‧‧Lighting area

R1‧‧‧ first axis

R2‧‧‧second axis

FIG. 1 is a perspective view of a light emitting diode package structure according to an embodiment of the invention.

2A-2F are schematic flow charts of a method for fabricating a light emitting diode package structure according to an embodiment of the invention.

100. . . Light emitting diode package structure

110. . . Carrier

112. . . Carrying area

114. . . Surrounding area

114a. . . First pair of sides

114b. . . Second pair of sides

120. . . Light-emitting diode chip

130. . . Encapsulant

140. . . Non-closed reflective structure

150. . . Welding wire

R. . . Light exit area

R1. . . First axis

R2. . . Second axis

Claims (13)

A light emitting diode package structure comprising: a carrier having a bearing area and a peripheral area surrounding the carrying area, wherein the peripheral area has a first pair of sides and a second pair of sides opposite to each other; a light emitting diode chip disposed on the carrying area of the carrier and electrically connected to the carrier, wherein the first pair of sides of the peripheral area extends along a first axis, the first part of the peripheral area The two pairs of sides extend along a second axis, the light-emitting diode wafer has a light-emitting angle on the first axis greater than the light-emitting angle on the second axis; and an encapsulant disposed on the carrier And covering the light-emitting diode wafer and the bearing area of the carrier; and a non-sealed reflective structure disposed on the peripheral area of the carrier and located on the first pair of sides, wherein the non-closed The reflective structure defines the second pair of sides as a light exit region. The light emitting diode package structure of claim 1, wherein the carrier comprises a circuit board or a wire lead frame. The light emitting diode package structure of claim 1, further comprising at least one bonding wire, the LED chip being electrically connected to the carrier through the bonding wire. The light emitting diode package structure of claim 1, wherein the material of the encapsulant comprises a light transmissive colloid. The light emitting diode package structure according to claim 1, wherein the material of the non-sealed reflective structure comprises an opaque resin. The light emitting diode package structure of claim 1, wherein the light emitting diode chip is adapted to emit a light beam, and the light beam is emitted through the light exiting region. A manufacturing method of a light emitting diode package structure includes: providing a carrier, the carrier comprising at least one load bearing area and at least one peripheral area surrounding the load bearing area, wherein the peripheral area has a first opposite side opposite to each other And a second pair of side edges; at least one light emitting diode chip is disposed on the carrying area of the carrier, wherein the light emitting diode chip is electrically connected to the carrier, wherein the first pair of the peripheral area a side edge extending along a first axis, the second pair of sides of the peripheral region extending along a second axis, the light emitting diode wafer having a light exit angle on the first axis greater than the second axis a light exiting angle on the line; forming an encapsulant on the carrier to cover the light emitting diode wafer and the carrying area of the carrier; and forming a non-sealed reflective structure in the peripheral region of the carrier The non-sealed reflective structure is located on the first pair of side edges, and the non-hermetic reflective structure defines the second pair of side edges as a light exiting region. The method of fabricating a light emitting diode package structure according to claim 7, wherein the carrier comprises a circuit board or a wire lead frame. The method of fabricating the LED package of claim 7, wherein before forming the encapsulant on the carrier, the method further comprises forming at least one bonding wire, and the LED is transmitted through the bonding wire. Electrically connected to the carrier. The method for fabricating a light emitting diode package structure according to claim 7, wherein the material of the encapsulant comprises a light transmissive colloid. The method for fabricating a light emitting diode package structure according to claim 7, wherein the material of the reflective structure comprises an opaque resin. The method for fabricating a light emitting diode package structure according to claim 7, wherein the step of forming the reflective structure in the peripheral region of the carrier comprises: forming a closed reflective structure in the peripheral region a first pair of sides and the second pair of sides; and the second pair of sides along the perimeter region cuts off the hermetic reflective structure to form the non-hermetic reflective structure. The method for fabricating a light emitting diode package according to claim 7, wherein after forming the reflective structure on the carrier, the method further comprises: the first pair of sides along the peripheral region and the first The two pairs of sides cut the carrier and the non-hermetic reflective structure to form a plurality of light emitting diode package units having the non-hermetic reflective structure.