JP2011166117A - Light emitting diode package structure and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting diode (LED) package structure capable of enlarging a light emitting angle. <P>SOLUTION: A carrier 110 has a retention region 112 and a peripheral region 114 surrounding the retention region. The peripheral region has a first pair of opposing lateral surfaces 114a and a second pair of opposing lateral surfaces 114b. An LED chip 120 is disposed on the retention region of the carrier and is electrically connected to the carrier. A molding material 130 is disposed on the carrier and seals the LED chip and the retention region of the carrier. A non-hermetic reflecting structure 140 is disposed on the peripheral region of the carrier and is positioned at the first pair of opposing lateral surfaces. The non-hermetic reflecting structure defines the second pair of opposing lateral surfaces as a luminous region. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a package structure and a method for manufacturing the same, and more specifically, the present invention relates to a light emitting diode (LED) package structure and a method for manufacturing the same.

  Due to advantages such as long life, small capacity, good vibration resistance, low heat radiation, and low power consumption, light emitting diodes (hereinafter referred to as “LED”) are widely used in various household devices and devices as indicators and light sources. Has been applied. In recent years, LEDs have been developed in the direction of multiple colors and high luminance, and thus the range of application has been extended to large outdoor bulletin boards, traffic signal lights, and the like. In the future, LEDs may even become the main lighting source with power saving and environmental protection functions.

  Since the conventional LED package structure is manufactured by a mass production method, the molding material is first filled in the holding region of the carrier, and the LED chip and the bonding wire are encapsulated. Next, the peripheral region of the molding material is coated with an opaque resin to form a reflective structure. Finally, a unitary cutting process is performed to form an LED package structure. However, the reflection structure is an airtight structure. Therefore, when the reflective structure is cut to form the LED package structure having the airtight structure, the light emission angle of the LED chip is reduced due to the interference of the reflective structure, and as a result, the manufactured LED The light emitting area of the package structure is affected.

  The present invention provides an LED package structure and a method of manufacturing the same, which can expand the light emission angle of the LED chip.

  In one embodiment of the present invention, an LED package structure having a carrier, an LED chip, a molding material, and a non-hermetic reflective structure is provided. The carrier has a holding region and a peripheral region surrounding the holding region, and the holding region has a first pair of opposing side surfaces and a second pair of opposing side surfaces. The LED chip is disposed in a holding region of the carrier and is electrically connected to the carrier. The molding material is disposed on the carrier and encloses the LED chip and the carrier holding region. The non-hermetic reflection structure is disposed in a peripheral region of the carrier and is positioned on the first pair of opposed side surfaces, and the non-hermetic reflection structure defines the second pair of opposed side surfaces as a light emitting region.

  In one exemplary embodiment of the present invention, the carrier includes a circuit board or a lead frame.

  In one embodiment of the present invention, the LED package structure further comprises at least one bonding wire. Furthermore, the LED chip is electrically connected to the carrier via the bonding wire.

  In one embodiment of the invention, the molding material comprises a transparent encapsulant.

  In one embodiment of the present invention, the material having the non-hermetic reflection structure includes an opaque resin.

  In one embodiment of the invention, the LED chip is adapted to emit a beam, which is emitted from the light emitting area.

  In one embodiment of the present invention, the first pair of opposing side surfaces of the peripheral region extends along a first axis, and the second pair of opposing side surfaces of the peripheral region extends along a second axis. Furthermore, the light emission angle of the LED chip on the first axis is larger than that on the second axis.

  According to one embodiment of the present invention, a method for manufacturing the LED package structure is as follows. First, a career is prepared. The carrier has at least one holding region and at least one peripheral region surrounding the holding region, and the peripheral region has a first pair of opposing side surfaces and a second pair of opposing side surfaces. At least one LED chip is disposed in the carrier holding region and is electrically connected to the carrier. The molding material is disposed on the carrier and encloses the LED chip and the carrier holding region. A non-hermetic reflection structure is formed in a peripheral region of the carrier, and the non-hermetic reflection structure is located on the first pair of opposed side surfaces, and defines the second pair of opposed side surfaces as a light emitting region.

  In one exemplary embodiment of the present invention, the carrier includes a circuit board or a lead frame.

  In one embodiment of the present invention, at least one bonding wire is further formed before the molding material is formed on the carrier. Further, the LED chip is electrically connected to the carrier through the bonding wire.

  In one embodiment of the invention, the molding material comprises a transparent encapsulant.

  In one embodiment of the present invention, the material having the non-hermetic reflection structure includes an opaque resin.

  In one embodiment of the present invention, the first pair of opposing side surfaces of the peripheral region extends along a first axis, and the second pair of opposing side surfaces of the peripheral region extends along a second axis. Yes. Further, the light emitting angle of the LED chip on the first axis is larger than that on the second axis.

  In one embodiment of the present invention, a method of generating a non-hermetic reflection structure on a peripheral region of the carrier forms a hermetic reflection structure on a first pair of opposing side surfaces and a second pair of opposing side surfaces of the peripheral region. And cutting the part of the hermetic reflection structure along the second pair of opposing side surfaces of the peripheral region to form the non-hermetic reflection structure.

  In one embodiment of the present invention, after the non-hermetic reflection structure is formed in the peripheral region of the carrier, the carrier and the non-hermetic reflection structure are separated from the first pair of opposing side surfaces and the second pair of the peripheral region. A plurality of LED package units having the non-hermetic reflection structure are formed by cutting along the opposite side surfaces.

  As described above, since the LED package structure according to the present application is designed using a non-hermetic reflection structure, the light emission angle of the LED chip can be efficiently expanded. Furthermore, in the present invention, the hermetic reflection structure becomes a non-hermetic reflection structure by a simple cutting process. Therefore, the manufacturing process can be simplified, thereby increasing the light emitting angle of the LED chip and reducing the manufacturing cost of the LED package structure.

  The foregoing summary and the following detailed embodiments are exemplary and are intended to further explain the technical features and advantages of the present invention in conjunction with the accompanying drawings.

  The accompanying drawings are included to facilitate an understanding of the present invention and are incorporated as part of this specification. The drawings illustrate embodiments of the invention and are provided to explain the principles of the invention together with a detailed description of the invention.

FIG. 1 is a light emitting diode (LED) package structure according to an embodiment of the present invention. FIG. 2A illustrates a method for manufacturing an LED package structure according to an embodiment of the present invention. FIG. 2B illustrates a method for manufacturing an LED package structure according to an embodiment of the present invention. FIG. 2C illustrates a method for manufacturing an LED package structure according to an embodiment of the present invention. FIG. 2D illustrates a method for manufacturing an LED package structure according to an embodiment of the present invention. FIG. 2E illustrates a method for manufacturing an LED package structure according to an embodiment of the present invention. FIG. 2F illustrates a method for manufacturing an LED package structure according to an embodiment of the present invention.

  FIG. 1 is a three-dimensional view of a light emitting diode (LED) package structure according to an embodiment of the present invention. Referring to FIG. 1, in the present embodiment, the LED package structure 100 includes a carrier 110, an LED chip 120, a molding material 130, and a non-hermetic reflection structure 140.

  Specifically, the carrier 110 has a holding area 112 and a peripheral area 114 surrounding the holding area 112. The peripheral region 114 has a first pair of opposed side surfaces 114a and a second pair of opposed side surfaces 114b. Here, the first pair of opposing side surfaces 114a of the peripheral region 114 extends along a first axis R1, and the second pair of opposing side surfaces 114b of the peripheral region 114 extends along a second axis R2. . In the present embodiment, the first axis R1 is substantially perpendicular to the second axis R2. Further, for example, the carrier 110 is a circuit board or a lead frame.

  The LED chip 120 is disposed on the holding region 112 of the carrier 110 and is electrically connected to the carrier 110. Particularly in the present embodiment, the LED chip 120 is electrically connected to the carrier 110 through at least one bonding wire 150. However, the electrical connection between the LED chip 120 and the bonding wire 150 is not limited to this. In another embodiment of the present invention, any connection method for electrically connecting the LED chip 120 and the carrier 110 is possible. Can be used as appropriate.

  The molding material 130 is disposed on the carrier 110 and encloses the LED chip 120 and the holding region 112 of the carrier 110. For example, if the carrier 110 is a lead frame, it should be noted that the molding material 130 encloses the bottom of the lead frame (ie, the back side of the holding area 112). Further, in the present embodiment, for example, the material of the molding material 130 is a transparent capsule material.

  The non-hermetic reflection structure 140 is disposed on the peripheral region 114 of the carrier 110 and is located on the first pair of opposing side surfaces 114a. The non-hermetic reflection structure 140 is a light emitting region of the second pair of airtight reflection structures 140. Define the opposite side. In this embodiment, the LED chip 120 is adapted to emit a beam, and the beam is emitted through the light emitting region R. Further, for example, the material of the non-hermetic reflection structure 140 is an opaque resin.

  In this embodiment, the LED package structure 100 is designed together with the non-hermetic reflection structure 140. As a result, when the LED chip 120 emits a beam, the light emission angle of the beam on the first axis R1 is larger than that on the second axis R2. That is, the light emission angle of the LED chip 120 on the first axis R1 is not affected by the non-hermetic reflection structure 140, so that the range becomes large. For example, the light emitting angle of the LED chip 120 is in the range of 130 degrees to 150 degrees. However, since the light emitting angle of the LED chip 120 on the second axis R2 is affected by the non-hermetic reflection structure 140, the range becomes small. For example, the light emitting angle of the LED chip 120 is in the range of 110 degrees to 120 degrees. In other words, according to the design of the non-hermetic reflection structure 140 of the present embodiment, in addition to the expansion of the light emission angle of the LED chip 120 (that is, preferably the expansion of 10 to 40 degrees), the side surface of the LED package structure 100 The light emitting area (ie, the second pair of opposing side surfaces 114b) is enlarged.

  Up to this point, only the structure of the LED package structure 100 of the present embodiment has been described without describing the manufacturing method of the LED package structure 100. Hereinafter, the manufacturing process of the LED package structure 100 will be described with reference to FIGS. 2A to 2F, taking the LED package structure 100 shown in FIG. 1 as an example.

  2A to 2F are diagrams illustrating a method of manufacturing an LED package structure according to an embodiment of the present invention. Referring to FIG. 2A, the carrier 110 is first prepared in the manufacturing method of the LED package structure according to the present embodiment. The carrier 110 has at least one holding region 112 and at least one peripheral region 114 surrounding the holding region 112, and the peripheral region 114 has a first pair of opposing side surfaces 114a and a second pair of opposing side surfaces 114b. The first pair of opposed side surfaces 114a and the second pair of opposed side surfaces 114b are opposed to each other. Here, the first pair of opposing side surfaces 114a of the peripheral region 114 extends along a first axis R1, and the second pair of opposing side surfaces 114b of the peripheral region 114 extends along a second axis R2. . The first axis R1 is substantially perpendicular to the second axis R2. Further, for example, the carrier 110 is a circuit board or a lead frame.

  Next, referring to FIG. 2B, at least one LED chip 120 is disposed on the holding region 112 of the carrier 110. Next, referring to FIG. 2B again, at least one bonding wire 150 is formed, and the LED chip 120 is electrically connected to the carrier 110 through the bonding wire 150. However, the electrical connection between the LED chip 120 and the bonding wire 150 is not limited to this form. In another embodiment of the present invention, any connection for electrically connecting the LED chip 120 and the carrier 110 is possible. The method can be used as appropriate.

  Referring now to FIG. 2C, a molding material 130 encapsulates the LED chip 120 and the holding area 112 of the carrier 110. For example, if the carrier 110 is a lead frame, it should be noted that the molding material 130 encloses the bottom of the lead frame (behind the holding area 112). Further, for example, the material of the molding material 130 is a transparent capsule material.

  Next, referring to FIG. 2D, an airtight reflecting structure 140 a is formed on the first pair of opposed side surfaces 114 a and the second pair of opposed side surfaces 114 b of the peripheral region 114. That is, the reflective structure 140a is disposed so as to surround the periphery of the molding material 130.

  2D and 2E, a part of the hermetic reflection structure 140a is cut along the second pair of opposing side surfaces 114b of the peripheral region 114 to form a non-hermetic reflection structure 140. That is, the airtight reflecting structure 114a located on the second pair of opposing side surfaces 114b is along the line C1 and C2, so that the second reflecting surface 114b of the peripheral region 114 has no conventional reflecting structure. Is cut off.

  Specifically, the second opposing side 114b of the peripheral region 114 is characterized as a light emitting region R by the arrangement of the non-hermetic reflecting structure 140 due to the absence of the conventional reflecting structure on the second opposing side 114b. be able to. Further, in this embodiment, the LED chip 120 is adapted to emit a beam, and the beam is emitted through the light emitting region R. The cutting line C1 is substantially parallel to the cutting line C2, and the material of the hermetic reflection structure 140a (or the non-hermetic reflection structure 140) is, for example, a non-transparent resin.

  2E and 2F, the carrier 110 and the non-hermetic reflection structure 140 are cut along the first pair of opposed side surfaces 114a and the second pair of opposed side surfaces 114b of the peripheral region 114. A plurality of light emitting diode / package units 100a having the non-hermetic reflection structure 140 are formed. The singulation process is performed along the cutting lines C3, C4, C5, and C6, and the light emitting diode package 100a that is an individual and has the non-hermetic reflection structure 140 is formed. Here, the cutting line C3 is substantially parallel to the cutting line C4, the cutting line C5 is substantially parallel to the cutting line C6, and the cutting lines C3 and C4 are further to the cutting lines C5 and C6. It is substantially perpendicular to it. At this point, the manufacture of the LED package structure is complete.

  In the method for manufacturing the LED package structure according to the present embodiment, the non-hermetic reflection structure 140 is formed on the first pair of opposed side surfaces 114a of the peripheral region 114 using a cutting method. Accordingly, when the LED chip 120 emits a beam, the light emission angle of the beam on the first axis R1 is larger than that on the second axis R2. That is, the light emission angle of the LED chip 120 in the first axis R1 (for example, the light emission angle of the LED chip 120 is in the range of 130 degrees to 150 degrees) is the light emission angle of the LED chip 120 in the second axis R2 (for example, The light emission angle of the LED chip 120 is larger than a range of 110 degrees to 120 degrees. As a result, the light emitting angle of the LED chip 120 is expanded (that is, preferably expanded by 10 to 40 degrees), and the light emitting region of the LED package structure 100 (that is, the second pair of opposed side surfaces). 114b) is enlarged.

  As described above, since the LED package structure according to the present invention is designed using a non-hermetic reflection structure, the light emission angle of the LED chip can be effectively expanded. Furthermore, in the present invention, the hermetic reflection structure becomes a non-hermetic structure by a simple cutting process. Therefore, the process can be simplified, thereby increasing the light emitting angle of the LED chip and reducing the manufacturing cost of the LED package structure.

  It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the application. In view of the above, it will be understood that the invention is intended to include modifications and variations of this application that fall within the scope of the appended claims and their equivalents.

Claims (10)

A carrier having a holding region and a peripheral region surrounding the holding region, the peripheral region having a first pair of opposing side surfaces and a second pair of opposing side surfaces;
A light emitting diode chip disposed on the carrier and electrically connected to the carrier;
A molding material disposed on the carrier and encapsulating the light emitting diode chip and the holding region of the carrier;
A non-hermetic reflection structure disposed on a peripheral region of the carrier and positioned on the first pair of opposed side surfaces, wherein the non-hermetic reflection structure defines the second pair of opposed side surfaces as a light emitting region. With non-hermetic reflection structure,
A light emitting diode package structure comprising:   2. The light emitting diode package structure according to claim 1, wherein the carrier includes a circuit board or a lead frame.   2. The light emitting diode package structure according to claim 1, further comprising at least one bonding wire, through which the light emitting diode chip is electrically connected to the carrier.   The first pair of opposing side surfaces of the peripheral region extend along a first axis, the second pair of opposing side surfaces extend along a second axis, and the light emitting angle of the light emitting diode chip on the first axis is 2. The light emitting diode package structure according to claim 1, wherein the light emitting diode chip has a light emitting angle larger than a light emitting angle of the light emitting diode chip in a second axis. Providing a carrier having at least one holding region and at least one peripheral region surrounding the holding region, the peripheral region having a first pair of opposing side surfaces and a second pair of opposing side surfaces;
Disposing at least one light emitting diode chip on the holding region of the carrier, the light emitting diode chip being electrically connected to the carrier; and
Forming a molding material on the carrier for enclosing the light emitting diode chip and the carrier holding region;
Forming a non-hermetic reflection structure on the peripheral region of the carrier, wherein the non-hermetic reflection structure is located on the first pair of opposing side surfaces, and the non-hermetic reflection structure serves as the light emitting region in the second region. A process defining the opposite side of the pair; and
A method of manufacturing a light emitting diode package structure, comprising:   6. The method of manufacturing a light emitting diode package structure according to claim 5, wherein the carrier includes a circuit board or a lead frame.   The method further comprises forming at least one bonding wire before forming the molding material on the carrier, and the light emitting diode chip is electrically connected to the carrier through the bonding wire. A method of manufacturing a light emitting diode package structure according to claim 5.   The first pair of opposing side surfaces of the peripheral region extends along a first axis, the second pair of opposing side surfaces of the peripheral region extends along a second axis, and the light emitting angle of the light emitting diode chip on the first axis 6. The method of manufacturing a light emitting diode package structure according to claim 5, wherein a light emitting angle of the light emitting diode chip in the second axis is larger. Forming the non-hermetic reflection structure on the peripheral region of the carrier,
Forming an airtight reflection structure on the first pair of opposing side surfaces and the second pair of opposing side surfaces of the peripheral region;
6. The method of claim 5, further comprising: cutting a part of the hermetic reflection structure along the second pair of opposite side surfaces of the peripheral region to form the non-hermetic reflection structure. Manufacturing method of light emitting diode package structure. After forming the non-hermetic reflection structure on the peripheral region of the carrier, the method further comprises:
In order to form a plurality of light emitting diode package structures having the non-hermetic reflection structure, the carrier and the non-hermetic reflection structure along the first pair of opposed side surfaces and the second pair of opposed side surfaces of the peripheral region. 6. A method of manufacturing a light emitting diode package structure according to claim 5, further comprising the step of:

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