TW522533B - Optical chip package with metal extension to the outside of glue. - Google Patents
Optical chip package with metal extension to the outside of glue. Download PDFInfo
- Publication number
- TW522533B TW522533B TW090104632A TW90104632A TW522533B TW 522533 B TW522533 B TW 522533B TW 090104632 A TW090104632 A TW 090104632A TW 90104632 A TW90104632 A TW 90104632A TW 522533 B TW522533 B TW 522533B
- Authority
- TW
- Taiwan
- Prior art keywords
- metal
- heat
- outside
- package
- metal substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Device Packages (AREA)
Abstract
Description
522533 五、發明說明(1) 1 ·本技藝適用領域 本技藝適用於發光二極體、雷射二極體· 望计 半導體晶片之散熱封裝,以下僅以發光二極體晶片2孚 作為範例說明。 ft 2.背景說明 由於技術的進步, 熱量愈來愈高,如 整個產品將會因為 果良好,則高亮度 亮度顯示幕... 度的發光二極體以 不良,在短時間之 的上端具有一個凹 二極體晶片1 0具有 二極體晶片1 〇具有 二金屬1 2。最後以 第一金屬的下端作 下端作為第二延伸 的第一金屬1 1上端 部,達到高散熱效 發 光 二 極 體 的 亮 度 愈 果 不 能 有 效 地 即 時 將 熱 量 的 聚 集 而 燒 壞 發 光 二 極 體 便 可 以 衍 等 產 品 〇 習 知 技 藝 如 這 種 封 裝 方 式 封 裝 以 内 產 品 就 會 燒 壞 〇 圖 杯14 用 以 容 納 發 光 二 底 面 電 極 電 性 輕 合 於 表 面 電 極 以 打 線 13 的 封 裝 膠 體 15 封 装 保 護 為 第 一 延 伸 電 極 〇 電 極 〇 本 技 藝 將 承 載 面 積 加 大 且 延 伸 至 果 之 發 光 二 極 體 封 裝 來愈高,所產生的 熱量發散出去,則 產品。如果散熱效 生出照明、以及高 圖1所示’在高亮^ 後,由於散熱效果 1顯示第一金屬 極體晶片1 〇,發光 第一金屬11。發光 方式電性耦合於第 # it j it件,裸露 也裸路第二金屬的 發光二極體晶片J 〇 封裝膠體1 5的夕卜522533 V. Description of the invention (1) 1 · Field of application of this technology This technology is applicable to the heat dissipation package of light-emitting diodes, laser diodes, and optoelectronic semiconductor wafers. The following uses only the light-emitting diode wafer 2 as an example. . ft 2. Background Description Due to the advancement of technology, the heat is getting higher and higher. If the whole product will be good, the high-brightness brightness display screen ... One concave diode wafer 10 has a diode wafer 10 and a dimetal 12. Finally, the lower end of the first metal is used as the lower end as the upper end of the second extended first metal 1 1 to achieve a high heat dissipation efficiency. The brightness of the light-emitting diode cannot be effectively concentrated in real time to burn the light-emitting diode. Other products can be developed. Known techniques such as this packaging method will burn out the product. Figure cup 14 is used to accommodate the light-emitting two bottom electrodes, which are electrically lightly connected to the surface electrodes. Extension electrode 0 electrode 0 This technology will increase the load-bearing area and extend to the fruit of the light emitting diode package, the higher the heat generated, the product will be dissipated. If the heat-dissipating effect produces lighting and high brightness, as shown in FIG. 1 'after highlighting ^, due to the heat-dissipating effect 1, the first metal electrode body wafer 10 is displayed, and the first metal 11 is illuminated. The light-emitting mode is electrically coupled to the # it j it piece, which is bare and also bare. The second metal light-emitting diode chip J 〇 Encapsulation gel 15
3·本技藝之詳細說明 圖2 ·本技藝呈古 、有延伸至封裝膠體外的散熱金屬範例3 · Detailed description of this technique Figure 2 · This technique is ancient and has an example of heat-dissipating metal that extends outside the encapsulant
522533 五、發明說明(2) --------- 與圖1 ·習知技藏尤π + 藝的第-電極:::ί封=-電極11的上端,習知技 第-電極η的上=封裝膠體15之内’圖 部份裸露在封裝Α的片狀金屬111,其周邊有一 極體晶mo發出;的,以便將其所承載的發光二 亮度發光二極體曰片充ί有效地即時發散’而保持高 亮度發光二極體:片^::哥命以及實用效果。尤其是高 散熱效果。 曰曰片h用本技藝之封裝最能顯現本案之高 由於本技藝所採用的延伸 片,且在敕細私壯伸屬政熱片111是一片金屬薄 在正们封衣的相對 光二極體的光亮度的負面事塑:α非:涛,因此,對於發 一封裝技藝所能獲得的言嘥二柃不顯者,相對地,由於此 果之後,仍然可以彳《得孓二果,相抵銷其負面阻光效 裝技藝頗為適合高;度高散果…… 之需求。 …、所而之發光二極體晶片封裝 =3·散熱片延伸成為聚光杯 顯示散熱金屬111,可以 多角形· · ·等,t π 41 %成為圓筒狀、凹杯狀、或是 蚪獲得聚光的效果。 、大,政熱效果更加,同 圖4·習知技藝 J^33 五、發明說明(3) =點。圖中顯示第一金屬21具有第-端211,用 A $戟發光二極體晶片2 0,日I > a -1:ia2VI,i!" 第一全凰从结 b 〇 田冤極。取後,封裝膠體2 5將 體晶片、厂& 11、第二金屬的第-端221、發光二極 金屬22的第二端,分別作為 體日日片20的兩個電極之延伸電極。 ,5_;—習知技藝(圖4的截面圖) = = 彎曲成Μ型平面 出於封裝膠體35,疮成^ ^ 邛伤的周邊區域延伸突 、, 馬合至第一金屬基材31以及第二金屬基材32。522533 V. Description of the invention (2) --------- and Figure 1 · The first electrode of the conventional technique + + :: ί 封 =-the upper end of the electrode 11 The upper part of the electrode η = within the encapsulant 15 is partially exposed in the sheet metal 111 of the encapsulation A, and there is a polar crystal mo on its periphery; Fully effective and instantaneous divergence 'while maintaining high-brightness light-emitting diodes: tablets ^ :: 哥 命 and practical effects. Especially high heat dissipation effect. The film h can best show the height of the case with the packaging of this technology. Because the extension film used in this technology is thin and private, it belongs to the political heat film 111. It is a relatively thin metal diode coated in a positive photodiode. The negative things about the brightness of the plastic are: α Fei: Tao. Therefore, for those who can't get the word that can be obtained through the development of a packaging technique, relatively, after this result, you can still get The technology of offsetting its negative light blocking effect is quite suitable for high demand; …, So the light-emitting diode chip package = 3. The heat sink extends into a condensing cup to display the heat-dissipating metal 111, which can be polygonal, etc., t π 41% becomes cylindrical, concave cup, or 蚪Get the effect of spotlight. Larger, the political and thermal effect is more, the same as Figure 4. Known Skills J ^ 33 V. Invention Description (3) = Point. The figure shows that the first metal 21 has a first end 211, and the light emitting diode wafer 20 with A $ is used. I > a -1: ia2VI, i! &Quot; . After taking out, the encapsulant 25 will use the body wafer, the factory & 11, the second end 221 of the second metal, and the second end of the light-emitting diode metal 22 as the extension electrodes of the two electrodes of the body-day sheet 20. , 5 _; — Knowledge technique (cross-sectional view of FIG. 4) = = curved into an M-shaped plane out of the encapsulation colloid 35, sores ^ ^ The peripheral area of the wound is extended, and the horse is connected to the first metal substrate 31 and Second metal substrate 32.
第6頁 五、發明說明(4) 圖8二本技藝之發光二極體具有雙底面 顯不本技藝也適用於具有雙底面 ° 之封获,狀上 » — 極之發光二極體晶片4 0Page 6 V. Description of the invention (4) Fig. 8 The light-emitting diode of this technology has a double bottom surface. This technology is also applicable to the seal with a double-side surface °, as above »— pole light-emitting diode wafer 4 0
之封衣,發光二極體晶片4〇之兩個 往筱日日片4U 別壓合接觸使電性耦人$镇 =底面電極431,432,分 圖9:圖8.的截面圖至第一金屬41以及第二金屬42。 顯示第一金屬41與第— 腳,提供整個產口 ::屬42的外端彎曲成為L型平面 屋之平面黏著式封裝。 Φ 圖1 一〇·圖8·外加散熱金屬 顯不圖8 ·的延伸金屬4 熱效果。散熱金屬4 ,更可以外加散熱片41 2,提高散 的。 屬4U以及散熱片412,也可以是一體成型 圖11.本技藝之售八 顯示金屬基村51雙3延伸結構 原理一樣:圖中顯-白分別具有延伸金屬511, 521,其餘 531,532,分別屙:,光一極體晶片50具有雙底面電極 金屬基材51,觸且電性耦合於金屬基材51,52。 膠體55,形成延伸少一部份的周邊區域延伸突出於封穿 本技藝也可以增加熱金屬511,521,提供散熱功能二 裝膠體55可以‘二孔”艺金屬基材51,52中,使得封 5 5之間的附著穩固二、、、Q,提鬲金屬基材5 1, 5 2與封裝膠體Encapsulation, two light-emitting diode wafers 40 and two U-shaped wafers 4U. Do not press contact to make the electrical coupling $ 镇 = bottom electrode 431, 432, Figure 9: Sectional view of Figure 8. A metal 41 and a second metal 42. The first metal 41 and the first leg are shown to provide the entire production port :: The outer end of the genus 42 is bent into an L-shaped flat house flat adhesive package. Φ Fig. 10 · Fig. 8 · Adding heat-dissipating metal shows the thermal effect of extension metal 4 in Fig. 8 ·. The heat-dissipating metal 4 can further be provided with a heat-dissipating sheet 41 2 to improve the heat dissipation. It belongs to 4U and heat sink 412, which can also be integrally formed. Figure 11. The technology of the eight display metal base village 51 double 3 extended structure is the same principle: in the figure, the white and white have extended metal 511, 521, and the remaining 531, 532, Respectively, the photo-polarity wafer 50 has a double-bottom electrode metal substrate 51, and is electrically and electrically coupled to the metal substrates 51 and 52. The colloid 55, which forms a small part of the surrounding area, is extended to protrude. This technique can also increase the thermal metal 511, 521, which provides heat dissipation. The two-pack colloid 55 can be 'two-hole' art metal substrates 51, 52, so that The adhesion between the seals 5 and 5 is stable. Second, Q, Q, lifting the metal substrate 5 1, 5 2 and the sealing gel
第7頁 522533 五、發明說明(5) 圖12·圖11外加散熱金屬 顯示圖11二的延伸金屬511, 521,更可以外 522,提高散熱效果。散熱金屬511以及散熱月1, 12, 以是一體成型的。散熱金屬521以及散埶片、g ★,也可 一體成型的。 …、片522,也可以是 圖1 3 ·散熱片外加聚光杯 顯示散熱金屬5 11,可以外加圓筒狀5丨5、凹杯狀、或曰夕 角形· · ·專,使得散熱面積更大,散熱效果更加二π = 獲得聚光的效果。 j時 圖14.聚光杯有雙支撐腳 頭示聚光杯515由弟一金屬基材51兩邊之延伸散熱金屬 511,共同支撐不意圖。 前述描述揭示了本發明之較佳實施例以及設計圖式,惟, 較佳實施例以及设计圖式僅是舉例說明,並非用於限制本 發明技藝之權利範圍於此,凡是以均等之技藝手段實施本 發明技藝者、或是以下述之「申請專利範圍」所涵蓋之權 利範圍而貫加者,均不脫離本發明之精神而為申請人之權 利範圍。Page 7 522533 V. Description of the invention (5) Figure 12 · 11 plus heat-dissipating metal Shows the extended metal 511, 521 of Figure 11-2, which can also be outside 522 to improve heat dissipation effect. The heat-dissipating metal 511 and the heat-dissipating months 1, 12 are integrally formed. The heat-dissipating metal 521, the loose sheet, and g ★ can also be integrally formed. …, Sheet 522, can also be as shown in Figure 1 3 · The heat sink with a condenser cup showing the heat dissipation metal 5 11 can be added with a cylindrical shape 5 丨 5, a concave cup shape, or a corner shape. The larger the heat dissipation effect is, the more π = the effect of condensing. Hour j Figure 14. The condenser cup has double support feet. The condenser cup 515 is extended by the heat-dissipating metal 511 on both sides of the metal substrate 51. It is not intended to support the condenser cup together. The foregoing description discloses the preferred embodiments and design drawings of the present invention. However, the preferred embodiments and design drawings are merely examples and are not intended to limit the scope of rights of the technology of the present invention. Those who implement the technology of the present invention, or those that extend from the scope of rights covered by the "Scope of Patent Application" described below, do not depart from the spirit of the present invention and are the scope of rights of the applicant.
第8頁 522533 圖式簡單說明 4. 圖式的簡單說明 圖1.習知技藝一 圖2.本技藝具有延伸至封裝膠體外的散熱金屬範例一 圖3.散熱片延伸成為聚光杯 圖4.習知技藝二 圖5.習知技藝二(圖4的截面圖) 圖6.本技藝具有延伸至封裝膠體外的散熱金屬範例二 圖7.本技藝之發光二極體具有雙表面電極_雙打線耦合 圖8. 本技藝之發光二極體具有雙底面電極_雙接觸耦合 圖9.圖8.的截面圖 圖1 0.圖8.外加散熱金屬 圖11 · 本技藝之雙金屬延伸結構 圖1 2.圖11外加散熱金屬 圖1 3.散熱片外加聚光杯 圖1 4.聚光杯有雙支撐腳 5. 元件編號表 晶片 10, 20· 30.40. 50. 金屬基材 11.21.31.41.51.21. 1 2.22. 32. 42. 52. 打線13.23.331.332. 凹杯1 4 封裝膠體1 5 金屬圓筒16. 515 散熱金屬 111 · 3 11. 411. 5 11 · 3 2 1 · 5 2 1Page 8 522533 Simple illustration of the diagram 4. Simple illustration of the diagram Figure 1. Known technique 1 Figure 2. This technique has a heat dissipation metal example that extends beyond the encapsulant 1 Figure 3. The heat sink extends into a condenser cup Figure 4 .Knowledge technology 2 Figure 5.Knowledge technology 2 (Sectional view of Figure 4) Figure 6. This technology has a heat dissipation metal example 2 that extends beyond the encapsulant. Figure 7. The light emitting diode of this technology has dual surface electrodes_ Double Line Coupling Figure 8. Light-emitting diode of this technology has double bottom electrode_Dual contact coupling Figure 9. Sectional view of Figure 8. Figure 10. Cross-linked metal Figure 11 · Bimetal extension structure of this technology Figure 1 2. Figure 11 with heat-dissipating metal Figure 1 3. Heat sink with condenser cup Figure 1 4. The condenser cup has double support feet 5. Component number table wafer 10, 20 · 30.40. 50. Metal substrate 11.21.31.41 .51.21. 1 2.22. 32. 42. 52. Wire 13.23.331.332. Concave cup 1 4 Encapsulation gel 1 5 Metal cylinder 16. 515 Thermal metal 111 · 3 11. 411.5 5 11 · 3 2 1 · 5 2 1
第9頁 522533Page 9 522533
第ίο頁Page ίο
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW090104632A TW522533B (en) | 2001-02-26 | 2001-02-26 | Optical chip package with metal extension to the outside of glue. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW090104632A TW522533B (en) | 2001-02-26 | 2001-02-26 | Optical chip package with metal extension to the outside of glue. |
Publications (1)
Publication Number | Publication Date |
---|---|
TW522533B true TW522533B (en) | 2003-03-01 |
Family
ID=28037024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW090104632A TW522533B (en) | 2001-02-26 | 2001-02-26 | Optical chip package with metal extension to the outside of glue. |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW522533B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7275851B2 (en) | 2002-04-04 | 2007-10-02 | Seiko Epson Corporation | Radiating member, illuminating device, electro-optical device, and electronic device |
-
2001
- 2001-02-26 TW TW090104632A patent/TW522533B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7275851B2 (en) | 2002-04-04 | 2007-10-02 | Seiko Epson Corporation | Radiating member, illuminating device, electro-optical device, and electronic device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW535307B (en) | Package of light emitting diode with protective diode | |
TWI320975B (en) | ||
TWI380433B (en) | Light emitting diode package | |
TWI328293B (en) | Light emitting diode and wafer level package method, wafer level bonding method thereof and circuit structure for wafer level package | |
TW200921933A (en) | Light-emitting diode chip component with thermal substrate and manufacturing method thereof | |
TWI518955B (en) | Multichip package structure | |
TWI262608B (en) | Light emitting device | |
TW201503423A (en) | Led package | |
JP2008300542A (en) | Substrate for light-emitting element package, and light-emitting element package | |
TW522533B (en) | Optical chip package with metal extension to the outside of glue. | |
TWI474521B (en) | Led package | |
JP6210720B2 (en) | LED package | |
TWI244780B (en) | LED package method | |
TW200935621A (en) | Light emitting diode package structure and light emitting diode packaging method | |
TW200532935A (en) | Package structure of enhanced power light emitting diode | |
CN214956884U (en) | LED light-emitting device | |
KR20150111103A (en) | Light emitting device package | |
TWI313074B (en) | ||
TWI343134B (en) | ||
TWI286389B (en) | Package for light emitted diode chip with crooked substrate | |
TWI544664B (en) | Light-emitting package structure and method of fabricating the same | |
TWI443874B (en) | Light-emitting package structure | |
TWI538266B (en) | Package structure of light emitting device and connection substrate thereof | |
TWM326223U (en) | Package structure of light emitting diode | |
TWM287504U (en) | Lead frame structure of LED |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |