CN214956884U - LED light-emitting device - Google Patents

Abstract

The application provides an LED light-emitting device, which comprises a packaging substrate, a first light-emitting diode and a second light-emitting diode, wherein the packaging substrate is provided with a first surface and a second surface which are oppositely arranged; a first LED chip and a second LED chip disposed on the first surface of the package substrate, the first and second LED chips including a first conductive type semiconductor layer, an active layer disposed on the second conductive type semiconductor layer, and a second conductive type semiconductor layer disposed on the active layer; a first encapsulation layer covering the first LED chip; a second encapsulation layer at least covering the second LED chip; the method is characterized in that: the area of the orthographic projection of the packaging substrate covered by the first packaging layer is larger than the area of the orthographic projection of the packaging substrate covered by the second packaging layer, and the area of the orthographic projection of the packaging substrate covered by the first packaging layer is 10% -40% of the area of the orthographic projection of the packaging substrate.

Description

LED light-emitting device

Technical Field

The utility model relates to a LED encapsulates technical field, especially relates to a LED illuminator.

Background

LED chips are rapidly developed for their excellent performance. The ultraviolet light LED, especially the deep ultraviolet light LED, has great application value, especially in sterilization, and has attracted people's high attention, becoming a new research hotspot.

The conventional deep ultraviolet LED packaging structure mainly adopts a ceramic bowl as a bearing substrate and a quartz glass packaging cover body. However, the package structure has the disadvantages of large volume and high price due to the existence of a certain thickness of the cavity and the ceramic bowl, and the light emitting efficiency of the package structure is low due to the fact that the light emitted by the LED chip firstly goes from the substrate (such as a sapphire substrate, the refractive index is about 1.76) to the air (generally regarded as the refractive index is 1) and then to the quartz glass (the refractive index is about 1.4).

Still others have molded silicone packages with planar ceramic substrates. The main disadvantages of this package are that deep ultraviolet light (below 290nm) is very destructive to silica gel, it is easily broken by long-term irradiation, and the transmittance of silica gel to deep ultraviolet light is relatively low.

Disclosure of Invention

In view of the above-mentioned drawbacks of the prior art, an object of the present application is to provide an LED lighting device, comprising:

the packaging substrate is provided with a first surface and a second surface which are oppositely arranged;

a first LED chip and a second LED chip disposed on the first surface of the package substrate, the first and second LED chips including a first conductive type semiconductor layer, an active layer disposed on the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed on the active layer;

a first encapsulation layer covering the first LED chip;

a second encapsulation layer at least covering the second LED chip;

the method is characterized in that: the area of the orthographic projection of the packaging substrate covered by the first packaging layer is larger than the area of the orthographic projection of the packaging substrate covered by the second packaging layer, and the area of the orthographic projection of the packaging substrate covered by the first packaging layer is 10% -40% of the area of the orthographic projection of the packaging substrate.

Further, the orthographic projection area of the first packaging layer covering the packaging substrate is 10% -25% of the orthographic projection area ratio of the packaging substrate.

Further, the orthographic projection area of the first packaging layer covering the packaging substrate is 25% -40% of the orthographic projection area of the packaging substrate.

Further, in the vertical direction of the first surface of the package substrate, when the thickness of the first LED chip is between 200-.

Further, when the thickness of the first LED chip is between 300-.

Further, the thickness of the side wall of the first packaging layer is smaller than that of the first LED chip, the thickness of the side wall of the first packaging layer is 100-.

Further, the thickness of the side wall of the first packaging layer is larger than that of the first LED chip, the thickness of the side wall of the first packaging layer is 300-.

Further, the second encapsulation layer surrounds the first encapsulation layer.

Further, the second encapsulation layer includes two portions, and the first portion and the second portion are respectively located on different sides of the first encapsulation layer.

Further, at least one interface exists between the first encapsulation layer and the second encapsulation layer.

Further, at least one bonding surface exists between the first packaging layer side wall and the second packaging layer side wall.

Further, the chip structure also comprises a third chip, and the second packaging layer covers the surface of the third chip.

Further, the first packaging layer is made of a fluorine-containing material.

Further, the second packaging layer is silica gel or epoxy resin.

Compared with the prior art, the beneficial effects of this application are as follows at least:

(1) according to the packaging substrate, the packaging layer is divided into the first packaging layer and the second packaging layer, and the orthographic projection area of the packaging substrate covered by the first packaging layer is 10% -40% of the orthographic projection area of the packaging substrate, so that the volume of the fluorine-containing material can be reduced, the risk of glue crack of the packaging layer is reduced, and the reliability of the LED light-emitting device is improved;

(2) this application reduces the protruding quantity on encapsulation layer surface through dividing into first encapsulation layer and second encapsulation layer with the encapsulation layer, reduces the probability of leaking sealing in the back end paster processing procedure, greatly improves the yield of product.

Drawings

Fig. 1 is a plan view of a light emitting device according to a first embodiment.

Fig. 2 is a plan view of the light emitting device according to the first embodiment shown in fig. 1, with the first and second encapsulation layers omitted.

Fig. 3 is a sectional view taken along line a1-a1' of the light emitting device according to the first embodiment shown in fig. 1 and 2.

Fig. 4 is a plan view of a light emitting device according to a second embodiment.

Fig. 5 is a sectional view taken along line B1-B1' of a light emitting device according to the second embodiment shown in fig. 4.

Description of reference numerals:

100: an LED light emitting device; 110: a package substrate; 111: an electrode pad; 113: a functional region; 114: a non-functional region; 116: a groove; 117: a metal layer; 121: a first LED chip; 122: a second LED chip; 123: a third chip; 1101: a first surface; 1102: a second surface; 131: a first encapsulation layer; 132: and a second encapsulation layer.

Detailed Description

The following description of the embodiments of the present application is provided by way of specific examples, and other advantages and effects of the present application will be readily apparent to those skilled in the art from the disclosure herein. The present application is capable of other and different embodiments and its several details are capable of modifications and variations in various respects, all without departing from the spirit of the present application.

In the description of the present application, it should be noted that the terms "upper" and "lower" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships that the products of the application usually place when using, and are only used for convenience in describing the present application and simplifying the description, but do not indicate or imply that the devices or elements that are referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application.

In the description of the present application, it is noted that the terms "first" and "second", etc. are used merely to distinguish descriptions, and are not to be construed as indicating or implying relative importance.

In the drawings of the present application, the first surface 1101 of the package substrate 110 may be defined by an x-axis and a y-axis, and a normal direction perpendicular to the first surface 1101 of the package substrate 110 may be a z-axis. In the present embodiment, the horizontal width of the first surface 1101 of the package substrate 110 in the x-axis direction may be equal to the horizontal width in the y-axis direction, but is not limited thereto.

First embodiment

Fig. 1 is a plan view of an LED light emitting device 100 according to a first embodiment of the present invention, fig. 2 is a plan view of the light emitting device 100 according to the first embodiment shown in fig. 1 with a first encapsulation layer and a second encapsulation layer omitted, and fig. 3 is a cross-sectional view of the light emitting device 100 according to the first embodiment shown in fig. 1 and 2 taken along line a1-a 1'.

Referring to fig. 1 to 3, fig. 1 to 3 provide an LED light emitting device, and the LED light emitting device 100 includes a package substrate 110, a first LED chip 121, a second LED chip 122, a third chip 123, a first encapsulation layer 131, and a second encapsulation layer 132 disposed on a first surface 1101 of the package substrate 110.

The package substrate 110 of the present embodiment may include a material having excellent support strength, heat dissipation, insulation, and the like. The package substrate 110 may include a material having high thermal conductivity. In addition, the package substrate 110 may be made of a material having a good heat dissipation property, so that heat generated from the chip may be effectively discharged to the outside. In alternative embodiments, the package substrate 110 may include an insulating material. For example, the package substrate 110 may include a ceramic material. The package substrate 110 may include a low temperature co-fired ceramic (LTCC) or a high temperature co-fired ceramic (HTCC). In another alternative embodiment, the package substrate 110 may be provided with a silicone resin, an epoxy resin, a thermosetting resin including a plastic material, or a high heat-resistant material. In another alternative embodiment, the package substrate 110 may include a metal compound. The package substrate 110 may include a metal oxide having a thermal conductivity of 140W/mK or more. For example, the package substrate 110 may include aluminum nitride (AlN) or aluminum oxide (Al)₂O₃)。

As shown in fig. 1 to 3, the package substrate 110 includes a first surface 1101 and a second surface 1102 which are oppositely disposed, the first surface 1101 of the package substrate 110 is provided with a functional region 113 and a non-functional region 114, and the second surface 1102 is provided with an electrode pad 111 which is connected to the functional region 113. The first LED chip 121, the second LED chip 122, and the third chip 123 are disposed on the functional region 113, and may be connected by gold wires or directly soldered to the functional region 113, for example. In an alternative embodiment, the functional region 113 is composed of a metal layer 117 formed on the first surface 1101 of the package substrate 110, the metal layer 117 is divided into at least two electrically isolated regions respectively connecting the positive and negative electrodes of the first LED chip 121, the second LED chip 122 and the third chip 123, and the electrode pad 111 leads out the electrodes of the first LED chip 121, the second LED chip 122 and the third chip 123 disposed on the functional region 113.

Although not shown in detail, it is understood that the first and second LED chips 121 and 122 may include a substrate, a semiconductor layer formed on a surface of the substrate, the semiconductor layer including a first conductive type semiconductor layer (n-type semiconductor layer), an active layer, and a second conductive type semiconductor layer (p-type semiconductor layer) which may be sequentially formed on the surface of the substrate, and the n-type semiconductor layer, the active layer, and the p-type semiconductor layer may include group III-V compound semiconductors, respectively, for example, may include nitride semiconductors such as AlGaInN. The n-type semiconductor layer may be a conductive type semiconductor layer including an n-type impurity (e.g., Si), and the p-type semiconductor layer may be a conductive type semiconductor layer including a p-type impurity (e.g., Mg). Also, the active layer may be interposed between the n-type semiconductor layer and the p-type semiconductor layer, and may include a multiple quantum well structure (MQW). And the composition ratio may be determined to be able to emit light of a desired peak wavelength. The first LED chip 121 and the second LED chip 122 further include electrode structures electrically connected to the n-type semiconductor layer and the p-type semiconductor layer, respectively, and the electrode structures of the first LED chip 121 and the second LED chip 122 are connected to the functional region of the package substrate 110, for example, by soldering, eutectic bonding, and the like, so as to fix the first LED chip 121 and the second LED chip 122. The electrode structures of the first and second LED chips 121 and 122 are LED out through electrode pads on the back surface of the package substrate 110.

According to an embodiment of the present invention, the first LED chip 121 and the second LED chip 122 are disposed on the first surface 1101 of the package substrate 110, wherein the first LED chip 121 may be any type of LED chip, for example, the first LED chip 121 emits invisible light with a wavelength between 200-.

The number of the first LED chips 121 may be selected according to power requirements and other factors, or invisible light LED chips with different wavelengths may be selected in the same light emitting device according to different applications. In this embodiment, the first LED chip 121 is exemplified by an LED chip with a light emitting wavelength less than 290 nm.

In another embodiment, the first LED chip 121 may emit light having a wavelength of 780nm to 1000nm, and emit infrared light.

According to an embodiment of the present invention, the second LED chip 122 may be any type of LED chip, for example, the second LED chip 122 emits visible light with a wavelength of 380nm to 760nm, preferably 380nm to 420nm, 440nm to 475nm, 490nm to 570nm, or 625nm to 740 nm.

The functional region 103 disposed on the package substrate 110 may be used to drive the first LED chip 121 and the second LED chip 122 to emit light simultaneously. The first LED chip 121 and the second LED chip 122 may be connected to the functional region 103 in a series connection or a parallel connection manner, so that the functional region 103 can simultaneously turn on or simultaneously turn off the first LED chip 121 and the second LED chip 122, and therefore, the first LED chip 121 has the same operating state as the second LED chip 122. When the first LED chip 121 and the second LED chip 122 work, the second LED chip 122 emits visible light, so as to identify that the first LED chip 121 is currently in a working state, thereby achieving a prompt effect.

According to the utility model discloses an embodiment, under the circumstances that has a plurality of LED chips simultaneously, every first LED chip 121 has at least a second LED chip 122 rather than establishing ties or parallelly connected, when guaranteeing that every first LED chip 121 is in operating condition, can both have at least one second LED chip 122 to emit visible light to sign and warning.

According to an embodiment of the present invention, the third chip 123 is an electrostatic protection element, such as a zener diode, for preventing the first LED chip 121 from being damaged by the static electricity that may occur due to the external power supply. In the present embodiment, the third chip 123 is disposed on the first surface 1101 of the package substrate 110 and is connected in inverse parallel with the first LED chip 121. The third chip 123 can limit the current and the voltage in a relatively small range during the use of the first LED chip 121, so as to prevent the first LED chip 121 from being impacted by the large current and the large voltage, that is, the first LED chip 121 can be protected.

According to an embodiment of the present invention, as shown in fig. 3, in the vertical direction of the first surface 1101 of the package substrate 110, the thickness of the first LED chip is between 200-.

In the related art, when the sealing layer is made of fluororesin, the bonding property between the fluororesin and the sealing substrate is poor, and the coefficient of thermal expansion of the fluororesin is large, so that the coefficient of thermal expansion of the fluororesin is severely mismatched with the coefficient of thermal expansion of the materials such as the chip and the sealing substrate. Therefore, the fluororesin may be cracked in the use environment where the cooling and heating cycles are alternated, thereby causing poor reliability of the chip fixed on the package substrate and even a case where the lamp is dropped out. Moreover, due to the characteristics of the fluororesin material, a film pressing process is generally adopted, but the thickness of the chip fixed on the packaging substrate is different, so that a plurality of convex surfaces are generated on the surface of the packaging layer, and the yield of subsequent products in taping sorting is greatly reduced.

Based on this, as shown in fig. 1 to 3, the first encapsulation layer 131 covers the first LED chip 121, and the second encapsulation layer 132 covers the second LED chip 122 and the third chip 123.

In an alternative embodiment, when the light emitting wavelength of the first LED chip 121 is preferably less than 290nm, the first encapsulation layer 131 is a fluorine-containing material such as a fluorine resin and covers the first LED chip 121. The fluorine-containing material is an inorganic substance, has good reliability and can well resist the irradiation of ultraviolet light. In addition, the refractive index n of the fluororesin is between 1.34 and 1.7, the transmissivity to ultraviolet light is high, and the light-emitting rate of the deep ultraviolet LED can be improved.

In an alternative embodiment, the second encapsulation layer 132 is a material such as silicon gel or epoxy resin. For example, the second encapsulation layer 132 is a silicon gel, and covers the second LED chip 122 and the third chip 123 around the first encapsulation layer 131 by dispensing or the like. The second packaging layer 132 is made of materials with good bonding performance with the packaging substrate, such as silica gel, so that the bonding force between the packaging layer and the packaging substrate can be increased, and the phenomenon that a chip fixed on the packaging substrate falls off to die the lamp is avoided.

As shown in fig. 1, the first encapsulation layer 131 is located in the middle of the LED light emitting device 100, and the second encapsulation layer 132 surrounds the first encapsulation layer 131 and is in a "zigzag" structure. The area of the first encapsulation layer 131 that covers the package substrate 110 is larger than the area of the second encapsulation layer 132 that covers the package substrate 110. In an alternative embodiment, the first encapsulation layer 131 covers the forward projection area of the package substrate 110 by 10% to 25%, for example, 15%, of the forward projection area of the package substrate 110, so that the volume of the fluorine-containing material can be reduced, the risk of glue crack of the encapsulation layer can be reduced, and the reliability of the LED light-emitting device can be improved. Furthermore, there is a joint between the first encapsulation layer 131 side wall and the second encapsulation layer 132 side wall.

As shown in fig. 3, in the vertical direction of the first surface 1101 of the package substrate 110, the thickness of the sidewall of the first package layer 131 is smaller than the thickness of the first LED chip 121, the thickness of the sidewall of the first package layer 131 is between 100-. In a preferred embodiment, the thickness of the first LED chip 121 is between 300-500 μm, the thickness of the sidewall of the first encapsulant layer 131 is between 200-400 μm, and the thickness of the sidewall of the second encapsulant layer 132 is between 200-400 μm. It should be noted that the thickness of the first package layer 131 or the second package layer 132 is the thickness from the upper side of the metal layer 117 to the surface of the first package layer 131 or the second package layer 132 away from the package substrate 110.

In an alternative embodiment, the top surface of the first encapsulation layer 131 on the side away from the package substrate is a "peak" structure, and it should be noted that, since the first encapsulation layer 131 needs to adopt a film pressing process, in a preferred embodiment, when the thickness of the fluorine material of the first encapsulation layer 131 before film pressing is thinner than that of the first LED chip 121, the first encapsulation layer 131 will take on the "peak" structure as shown in fig. 3 after film pressing. The thickness of the first encapsulation layer 131 over the first LED chip 121 is not at the same level as the thickness of the sidewall of the first encapsulation layer 131. The second package layer 132 is made of a material such as silicon gel, and the second package layer 132 is a relatively flat plane by dispensing. The structure can solve the problem that the surface of the packaging layer generates a plurality of convex surfaces due to different thicknesses of the chips fixed on the packaging substrate 110, so that the sealing leakage is caused when the patch absorbs the product in the subsequent process, thereby improving the yield of the product in the packaging braid.

In one embodiment, referring to fig. 2 and 3 again, the non-functional region 114 is also provided with a metal layer 117 surrounding the functional region 113 of the package substrate 110, and a groove is formed between the metal layer 117 on the non-functional region 114 and the functional region 113 of the package substrate 110, so that the metal layer 117 on the non-functional region 114 is insulated and isolated from the functional region 113 of the package substrate 110, and the metal layer 117 on the non-functional region 114 forms a metal boss protruding from the first surface 1101 of the package substrate 110, thereby enhancing the bonding force between the second package layer 132 and the package substrate 110, and reducing the risk of separation between the second package layer 132 and the edge of the package substrate 110.

In an alternative embodiment, referring to fig. 2 and 3, the metal layer 117 on the nonfunctional area 114 may further have a plurality of etched recesses 116 thereon, and the recesses 116 may further enhance the bonding force between the second encapsulation layer 132 and the edge of the encapsulation substrate 110.

Second embodiment

The second embodiment may adopt the technical features of the first embodiment, and the main features of the second embodiment will be described below.

Fig. 4 is a plan view of an LED light emitting device 100 according to a second embodiment of the present invention, and fig. 5 is a sectional view of the light emitting device 100 according to the second embodiment shown in fig. 4, taken along line B1-B1'.

As shown in fig. 4 and 5, the first encapsulation layer 131 covers the first LED chip 121, and the second encapsulation layer 132 covers the second LED chip 122 and the third chip 123.

In an alternative embodiment, when the light emitting wavelength of the first LED chip 121 is preferably less than 290nm, the first encapsulation layer 131 is a fluorine-containing material such as a fluorine resin and covers the first LED chip 121. The fluorine-containing material is an inorganic substance, has good reliability and can well resist the irradiation of ultraviolet light. In addition, the refractive index n of the fluororesin is between 1.34 and 1.7, the transmissivity to ultraviolet light is high, and the light-emitting rate of the deep ultraviolet LED can be improved.

In an alternative embodiment, the second encapsulation layer 132 is a material such as silicon gel or epoxy resin. For example, the second encapsulation layer 132 is a silicon gel, and covers the second LED chip 122 and the third chip 123 around the first encapsulation layer 131 by dispensing. The second packaging layer 132 is made of materials with good bonding property with the packaging substrate, such as silica gel, so that the bonding force between the second packaging layer 132 and the packaging substrate 110 can be increased, and the phenomenon that a chip fixed on the packaging substrate 110 drops to stop the lamp is avoided.

As shown in fig. 4, the first package layer 131 is a "bar" structure, and the second package layer 132 is divided into two sections of "bar" structures distributed on different sides of the first package layer 131. The area of the first encapsulation layer 131 that covers the package substrate 110 is larger than the area of the second encapsulation layer 132 that covers the package substrate 110. In an alternative embodiment, the forward projection area of the first encapsulation layer 131 covering the package substrate 110 is 25% to 40%, for example, 30%, so that the volume of the fluorine-containing material can be reduced, the risk of glue crack of the encapsulation layer can be reduced, and the reliability of the LED light-emitting device can be improved. In addition, at least two joint surfaces exist between the first packaging layer side wall and the second packaging layer side wall.

As shown in fig. 5, in the vertical direction of the first surface 1101 of the package substrate 110, the thickness of the sidewall of the first package layer 131 is greater than the thickness of the first LED chip 121, the thickness of the sidewall of the first package layer 131 is between 300-. In a preferred embodiment, the thickness of the first LED chip 121 is between 300-500 μm, the thickness of the first encapsulation layer is 400-600 μm, and the thickness of the sidewall of the second encapsulation layer is between 400-600 μm. It should be noted that the thickness of the first package layer 131 or the second package layer 132 is the thickness from the upper side of the metal layer 117 to the surface of the first package layer 131 or the second package layer 132 away from the package substrate 110.

In an alternative embodiment, the top surface of the first encapsulation layer 131 on the side away from the package substrate 110 is a relatively flat surface, which is described herein because the first encapsulation layer 131 is formed by a film pressing process, in a preferred embodiment, when the thickness of the fluorine material of the first encapsulation layer 131 before the film pressing is thicker than that of the first LED chip 121, the thickness of the whole first encapsulation layer 131 is higher than that of the first LED chip 121 after the film pressing, but the first encapsulation layer 131 above the first LED chip 121 is slightly higher than the sidewall of the first encapsulation layer 131, so that the top surface of the first encapsulation layer 131 on the side away from the package substrate 110 is a relatively flat surface. The second package layer 132 is made of a material such as silicon gel, and the second package layer 132 is a relatively flat plane by dispensing. The structure can solve the problem that the surface of the packaging layer generates a plurality of convex surfaces due to different thicknesses of the chips fixed on the packaging substrate, so that the sealing leakage is caused when the patch absorbs the product in the subsequent process, and the yield of the product in the packaging braid is improved. To sum up, the LED light-emitting device of the application has the following beneficial effects:

(1) according to the LED light-emitting device, the packaging layer is divided into the first packaging layer and the second packaging layer, the orthographic projection area of the packaging substrate 110 covered by the first packaging layer is 10% -40% of the orthographic projection area of the packaging substrate, so that the volume of the fluorine-containing material can be reduced, the risk of glue crack of the packaging layer is reduced, and the reliability of the LED light-emitting device is improved;

(2) this application reduces the protruding quantity on encapsulation layer surface through dividing into first encapsulation layer and second encapsulation layer with the encapsulation layer, reduces the probability of leaking sealing in the back end paster processing procedure, greatly improves the yield of product.

The foregoing is only a preferred embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and substitutions can be made without departing from the technical principle of the present application, and these modifications and substitutions should also be regarded as the protection scope of the present application.

Claims (14)

1. An LED lighting device comprising:

the packaging substrate is provided with a first surface and a second surface which are oppositely arranged;

a first LED chip and a second LED chip disposed on the first surface of the package substrate, the first and second LED chips including a first conductive type semiconductor layer, an active layer disposed on the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed on the active layer;

a first encapsulation layer covering the first LED chip;

a second encapsulation layer at least covering the second LED chip;

the method is characterized in that: the area of the orthographic projection of the packaging substrate covered by the first packaging layer is larger than the area of the orthographic projection of the packaging substrate covered by the second packaging layer, and the area of the orthographic projection of the packaging substrate covered by the first packaging layer is 10% -40% of the area of the orthographic projection of the packaging substrate.

2. The LED light-emitting device according to claim 1, wherein the first encapsulation layer covers the packaging substrate with an orthographic projection area of 10% -25% of the packaging substrate.

3. The LED light-emitting device according to claim 1, wherein the first encapsulation layer covers the encapsulation substrate with an orthographic projection area ratio of 25% -40%.

4. The LED light-emitting device according to claim 1, wherein when the thickness of the first LED chip is between 200-800 μm in the vertical direction of the first surface of the package substrate, the thickness of the sidewall of the first package layer is between 100-900 μm, and the thickness of the sidewall of the second package layer is between 100-900 μm.

5. The LED light-emitting device according to claim 4, wherein when the thickness of the first LED chip is between 300-500 μm, the thickness of the first encapsulation layer is between 200-600 μm, and the thickness of the sidewall of the second encapsulation layer is between 200-600 μm.

6. The LED light emitting device as claimed in claim 4, wherein the thickness of the first encapsulant layer sidewall is less than the thickness of the first LED chip, the thickness of the first encapsulant layer sidewall is between 100-700 μm, and the thickness of the second encapsulant layer sidewall is between 100-700 μm.

7. The LED light emitting device as claimed in claim 4, wherein the thickness of the first encapsulant layer sidewall is greater than the thickness of the first LED chip, the thickness of the first encapsulant layer sidewall is between 300-900 μm, and the thickness of the second encapsulant layer sidewall is between 300-900 μm.

8. The LED lighting device of claim 1, wherein the second encapsulant layer surrounds the first encapsulant layer.

9. The LED luminescent device of claim 1, wherein the second encapsulation layer comprises two portions, a first portion and a second portion being respectively located on different sides of the first encapsulation layer.

10. The LED lighting device of claim 1, wherein at least one interface exists between the first encapsulant layer and the second encapsulant layer.

11. The LED lighting device of claim 10, wherein at least one bonding surface is present on the first encapsulant layer sidewall and the second encapsulant layer sidewall.

12. The LED luminescent device of claim 1, further comprising a third chip, wherein the second encapsulation layer covers a surface of the third chip.

13. The LED lighting device of claim 1, wherein the first encapsulant layer is a fluorine-containing material.

14. The LED lighting device according to claim 1, wherein the second encapsulation layer is a silicone or an epoxy.

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