TW201124503A - Adhesive tape for protecting surface of semiconductor wafer - Google Patents

Adhesive tape for protecting surface of semiconductor wafer Download PDF

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Publication number
TW201124503A
TW201124503A TW099145115A TW99145115A TW201124503A TW 201124503 A TW201124503 A TW 201124503A TW 099145115 A TW099145115 A TW 099145115A TW 99145115 A TW99145115 A TW 99145115A TW 201124503 A TW201124503 A TW 201124503A
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Taiwan
Prior art keywords
semiconductor wafer
adhesive tape
film
adhesive
surface protection
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TW099145115A
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Chinese (zh)
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TWI465541B (en
Inventor
Hirotoki Yokoi
Yoshifumi Oka
Shozo Yano
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Furukawa Electric Co Ltd
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Publication of TW201124503A publication Critical patent/TW201124503A/en
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Publication of TWI465541B publication Critical patent/TWI465541B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/62—Polymers of compounds having carbon-to-carbon double bonds
    • C08G18/6216—Polymers of alpha-beta ethylenically unsaturated carboxylic acids or of derivatives thereof
    • C08G18/622—Polymers of esters of alpha-beta ethylenically unsaturated carboxylic acids
    • C08G18/6225—Polymers of esters of acrylic or methacrylic acid
    • C08G18/6229—Polymers of hydroxy groups containing esters of acrylic or methacrylic acid with aliphatic polyalcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/62—Polymers of compounds having carbon-to-carbon double bonds
    • C08G18/6216—Polymers of alpha-beta ethylenically unsaturated carboxylic acids or of derivatives thereof
    • C08G18/625—Polymers of alpha-beta ethylenically unsaturated carboxylic acids; hydrolyzed polymers of esters of these acids
    • C08G18/6254—Polymers of alpha-beta ethylenically unsaturated carboxylic acids and of esters of these acids containing hydroxy groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/02—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C09J2433/003—Presence of (meth)acrylic polymer in the primer coating
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2467/00—Presence of polyester
    • C09J2467/006—Presence of polyester in the substrate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2475/00—Presence of polyurethane
    • C09J2475/003—Presence of polyurethane in the primer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Adhesive Tapes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Laminated Bodies (AREA)

Abstract

An adhesive tape for protecting the surface of a semiconductor wafer comprises a substrate resin film and an adhesive layer directly on the substrate resin film with an intermediate resin layer, in which base resin components containing an acrylic polymer and/or polyurethane acrylate are cross-linked, interposed therebetween. The repulsion coefficient (α ) obtained by dividing repulsion force (a) per unit width, which is found from the load of loop stiffness obtained by measuring the adhesive tape for protecting the surface of the semiconductor wafer under a specific condition, by the square of the thickness (ss) of a substrate is 100 mN/mm3 or more, the repulsion force (a) is 13 mN/mm or less, and the difference between tensile fracture elongations in a longitudinal direction and a lateral direction is 35% or less.

Description

201124503 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種半暮贈曰圓主z, 干导體日日®表面保護用黏著帶。更 詳細而言’本發明係關於— 禋將牛導體晶圓研削成薄膜時 所使用之半導體晶圓表面保護用黏著帶。 【先前技術】 半導體封裝係將高純度單 圓後’藉由離子植入、钮刻等 而製造。藉由對形成有積體電 削、研磨等，將半導體晶圓製 形成於半導體晶圓表面之積體 面保護用黏著帶。經背面研削 束後收納於晶圓盒中，並輸送 晶片。 晶矽等切片而製成半導體晶 在該晶圓表面形成積體電路 路之半導體晶圓背面進行研 成所需厚度。此時，為保護 電路，而使用半導體晶圓表 之半導體晶圓於背面研削結 至切割步驟，加工成半導體 从体，錯由霄 叫、厚度薄至200〜 400 # m左右。然而，隨著近年夾古 迎平來阿岔度構裝技術之進步， 必需使半導體晶片小型化，半導俨 、等體曰曰圓之薄厚化不斷推 進。根據半導體晶片之種類，必需传i ,、 — 而便具溥至100# m左右。 又’為了增加可藉由一次加工而製 曰仏H _ 我以之+導體晶片之數201124503 VI. Description of the Invention: [Technical Field to Be Invented by the Invention] The present invention relates to an adhesive tape for a surface protection of a dry conductor. More specifically, the present invention relates to an adhesive tape for protecting a surface of a semiconductor wafer used for grinding a beef conductor wafer into a film. [Prior Art] The semiconductor package is manufactured by ion implantation, button etching, etc. after high-purity single circle. The semiconductor wafer is formed on the surface of the semiconductor wafer by the integrated surface electrode, the polishing, or the like. After the back grinding, the bundle is stored in a wafer cassette and the wafer is transported. The wafer is sliced to form a semiconductor crystal. The back surface of the semiconductor wafer on which the integrated circuit is formed on the surface of the wafer is formed to have a desired thickness. At this time, in order to protect the circuit, the semiconductor wafer using the semiconductor wafer table is grounded to the cutting step on the back side, and processed into a semiconductor body, which is squeaky and thin to a thickness of about 200 to 400 #m. However, with the advancement of Ao Du's assembly technology in recent years, it is necessary to miniaturize semiconductor wafers, and to promote the thinning of semi-conducting ruthenium and other bodies. Depending on the type of semiconductor wafer, it is necessary to pass i, - and it will be around 100# m. Also, in order to increase the number of conductor wafers that can be produced by one process.

量’故晶圓之直徑亦才I大型化之倾6 、A 叫° &amp;今為止直徑為5 英吋或6英吋之晶圓為主流，相對 ^ 對於此，近年來由直徑8 〜12奂p寸之半導體晶圓加工成半導栌 卞等體日日片成為主流。 半導體晶圓之薄厚化及大徑化 二缚勢尤盆於广在 NAND型或NOR型之快閃記憶體之 &gt;音七 子 填或、或揮發性記憶體 201124503 之D編等領域中具有顯著之傾向。例 吋之半導體晶圓，將其研 使用直位12央 不罕見。於將大口經之半導體曰η”之厚度以下的情泥並 晶圓之剛性下降，容易產“圓研削至薄厚之情形時， 牛合易產生翹曲。 箱中：t導體晶圓係由機械臂自被稱為晶圓盒之專用 定用夾具保持取出’並由位於研削機器内之半導體晶圓固 曰圓由二’從而進行背面研肖“經背面研削之半導體 '收納於晶圓盒中，並搬送至下一步[若當 由半導體晶圓固定用土 會有半導體晶圓無法順利Γ 體晶圓之麵曲大，則 體晶圓破損。/，、、若，附之情形’或最壞情形時半導 .χ , 田收納於晶圓盒中時半導體晶圓之翹 會有機械臂與收納後之半導體晶圓接觸，而使半 導體日日圓破損之問題。 出有不將研削後之薄型晶圓收納於晶圓各 ’而自背面研削步驟至切割帶構裝步驟 ： (連續式裝置）。又，担山+ t 衣置 故出有藉由提高晶圓固定夾具或機械臂 } 而即使晶圓翹曲亦難以受其影響之方法。 另一方面，描山士&quot;， 捉出有如下之方法：於將半導體晶圓表面 科曰用點著帶貼合於半導體晶圓時，藉由降低施加於半導 獻日;圓中之應而減少半導體晶圓之翹曲。例如於專利文 ^ ，提出有基材與設置於該基材之應力緩和性臈上之 黏著劑層所構成、 係通過可剝離加工用黏著片，#中該基材 接著劑層積層剛性膜與應力緩和性膜而 4 201124503 又，於專利文獻2中，揾 間含有具有特定銘@ _ 一種在基材與黏著劑層之 著片，二：存彈性模數之中間層的加工用黏 者月，於專利文獻3中， 3.^ m ^ ^ b 種基材膜由至少3層構成， 且該基材膜之表背之最外層 Μ 5* r λλ L s畀内層的儲存彈性模數分別在 特疋靶圍内的半導體晶圓保 φ , ^ ^ . 更用黏者膜。並且於專利文獻4 中，U有一種積層有特定材料之多層片。 然而’於使用專利文# 签恶卩主. 之半導體晶圓表面保護用黏 者帶時，在進行半導體晶 祕#如a t 後’必需進行於可剝離之 接者劑層與剛性膜之界面、 ^ ^ T到離之接著劑層與應力緩和 性膜之界面、或構成可剝離 接者劑層之層之内部進行剝 離的繁雜步驟。又，黏著劑層 嘗Μ層及應力緩和層係由數層重疊 而成，緩衝性過剩，因此於將丰曰 平導體晶圓研削至5 0 ν m厚 以下時，產生晶圓裂縫之可能性高。 又，於將專利文獻2之半導體晶圓加工用黏著片之半 導體晶圓保護用黏著片貼合於形成有聚醯亞胺膜之半導體 晶圓，進行半導體晶圓之背面研削時，若半導體晶圓之厚 度在⑽^以下’則會有塗佈於半導體晶圓表面之絕緣膜 收縮，因此使得半導體晶圓本身㈣曲之情形。於此情形 時’將半導體晶圓保持於晶圓固定用夾具時，t有半導體 晶圓脫落之問題。 並且，於將專利文獻3之半導體晶圓加工用黏著片貼 合於形成有聚酿亞胺膜之半導體晶圓，進行半導體晶圓之 背面研削之情形時，耗於搬送附有黏著片之晶圓之方面 不會有問胃’但於將半導體晶圓研削至5〇心厚以下之薄 201124503 膜之情形時’會有產生邊緣裂痕或晶圓裂縫之情形。 專利文獻1 :日本特開2003— 261842號公報 專利文獻2 :日本特開2004- 107644號公報 專利文獻3 :日本特開2〇〇2— 69396號公報 專利文獻4:日本特開2006— 264296號公報 【發明内容】 “本發明之課題在於提供一種半導體晶圓表面保護用黏 著帶即使於將。亥半導體晶圓表面保護用黏著帶貼合於半 導體阳圓之狀態下對該晶圓背面進行 膜，例如_…下之薄膜晶圓。 本發明人等對上述課題進行潛心研究。其結果發現如 下之半導體晶圓表面保護用黏著帶可解決上述課題，該半 導體晶圓表面保護用黏著帶係通過基材樹脂膜與於該基材 樹脂膜上含有丙烯酸聚合物及/或聚胺自旨丙烯酸醋 (P yurethane acrylate)之基礎樹脂成分交聯而成之中間樹 脂層而直接具有黏著劑層者，從特定條件下測量該半導體 ㈣以㈣㈣㈣而得之環剛度（bop出他⑶)之負載 f重所求出的每單位寬度之斥力α與排斥係數r位於特定 範圍内’且縱方向與橫方向之拉伸斷裂伸長率之差在特定 之值以下。本發明係基於此見解而完成者。 即’本發明提供以下之發明。 士 &lt; 1 &gt; 一種半導體晶圓表面保護用黏著帶，其係通過基 材树月曰膜與於该基材樹脂膜上含有丙烯酸聚合物及/或聚 胺曰丙;自夂酉曰之基礎樹脂成分交聯而成之中間樹脂層而直 201124503 從以下述條件（a)〜（d)測 而得之環剛度之負載荷 除以基材厚度沒之平方 接具有黏著劑層者，其特徵在於： 量該半導體晶圓表面保護用黏著帶 重所求出的每單位寬度之斥力〇， 所得之排斥係數7在H)〇mN/mm3以上，斥力μ UmN/ mm以下，且縱方向與橫方向之拉伸斷裂伸長率之差在μ% 以下。 (a) 裝置 環剛度試驗機（商品名，東洋精機公司製造） (b) 環（試驗片）形狀 長度50mm以上、.寬度1 〇mm (c) 壓頭之壓入速度 3.3mm/ sec (d) 壓頭之壓入量 自壓頭與環接觸之時刻起壓入5 m m &lt;2&gt;如&lt;1&gt;之半導體晶圓表面保護用黏著帶，其 中’上述中間樹脂層之丙烯酸聚合物具有羥基及羧基。 &lt;3&gt;如&lt;1&gt;之半導體晶圓表面保護用黏著帶，其 中’上述中間樹脂層之聚胺酯丙烯酸酯具有羥基及羧基。 &lt; 4 &gt;如&lt; 1 &gt;至&lt; 3 &gt;中任一項之半導體晶圓表面保 護用黏著帶，其中，上述中間樹脂層之交聯後之玻璃轉移 溫度為—10°c〜30°C。 &lt;5&gt;如&lt;1&gt;至&lt;4&gt;中任一項之半導體晶圓表面保 護用黏著帶，其中，上述基材樹脂膜為聚酯樹脂膜。 &lt; 6 &gt;如&lt; 5 &gt;之半導體晶圓表面保護用黏著帶，其 7 201124503 中，上述聚酯樹脂膜為聚對酞酸乙二醋膜。 &lt;7&gt;如&lt;5&gt;或&lt;6&gt;之半導體晶圓表面保護用黏著 帶，其中’上述聚酯樹脂膜之厚度為25〜75&quot;m。 &lt;8&gt;如&lt;1&gt;至&lt;7&gt;中任一項之半導體晶圓表面保 護用黏著帶，|中’上述半導體晶圓表面保制黏著帶為 感壓型黏著帶，20〜2rc下之對sus研磨面之黏著力在 〇.5N/25mm以上，且50t下之對咖研磨面之黏著力在 〇·5Ν/ 25mm 以下。 &lt;9&gt;如&lt;8&gt;之半導體晶圓表面保護用黏著帶，其 中，構成上述黏著劑層之基礎樹脂之重量平均分子量在 萬以上》 &lt;::〉如…至&lt;7&gt;中任一項之半導體晶圓表面保 護用黏著帶’纟中’上述黏著劑層會因為照射放射線而使 得黏著力變低。 &lt;11&gt;如&lt;1〇&gt;之半導體晶圓表面保護用黏著帶’： 中^上述黏著劑層係使用以下述聚合物作為主成分的基石 樹脂而成，該下述聚合物含有對主鏈具有丨個以上含放^ 線聚合性碳-碳雙鍵之基的丙烯酸系單體作為構成單元。 即使於將本發明之半導體晶圓表面保護用黏著帶貝“ 於半導體晶圓表面之狀態下對該晶圓背面進行研削，而; 成100”以下之薄臈晶圓之情形時，亦可降低該半導體占 圓之翹曲。因此，可減少因半導體晶圓之翹曲所引起之: 送晶圓時之脫落失誤，可無阻礙地實施至下—步驟即切史 帶或切割、晶片接合膜之構裝及表面保護帶之剝離為止:’ 8 201124503 本發明之半導體晶圓表面保護用黏著帶可用於如dram或 NAND快閃之必需進行薄膜研削的半導體晶圓加工。 本發明之上述及其他特徵及優點可參照適當隨附之圖 式，而從下述記載可更加清楚。 【實施方式】. 參照圖式，對本發明之較佳之半導體晶圓表面保護用 黏著帶進行說明。 圖卜係表示本發明之半導體晶圓表面保護用黏著帶之 較佳之-實施形態的概略剖面圖。從_ i可知，基材樹脂 膜i與基材樹脂膜i上黏著劑層2通過中間樹脂層3而形 成於基材樹脂膜1上。 本發明之半導體晶圓表面保護黏著帶，即使於將附有 以聚醯亞胺為代表之絕緣臈之半導體晶圓研削成薄膜之情 开/時亦可抑制半導體晶圓之麵曲量。通常，於半導體曰 圓之表面形成數心左右之聚醢亞胺等絕緣膜。 : =大多藉由加熱等而㈣，因此於半導體晶圓表面之= 時存在殘留應力。’“，半導體晶圓之背面研削前， 半導體晶圓較厚，1具有剛性，因： 致半導體㈣曲，，若將半導體晶圓研導 :半導體晶圓本身之剛性下降。㈣此產生 由將聚醯亞胺膜*找本々极从 象 殘留應力超過半導體之、'膜交聯時之熱收縮等弓1起之 於將本發明之半 千导體曰曰圓本身翹曲。 面而進行研削^开 #㈣㈣帶貼合於晶圓表 則之情料，本發明之黏著帶發揮超過上述絕 201124503 緣膜之殘留應力之翹曲矯正率，從而可降低研削後之半導 體晶圓之翹曲。 本發明之半導體晶圓表面保護用黏著帶，係於進行半 導體晶圓之背面研削之後剝離。本發明之半導體晶圓表面 保護用黏著帶，其從以下述條件下測得之環剛度所求出的 單位寬度之斥力α，除以基材厚度石之平方所得之排斥係 數r在100N/mm3以上，斥力α在18N/mm以下，且縱 方向與橫方向之拉伸斷裂伸長率之差在35%以下。 八文併/卜 --- 〜j W々、放％及千導體晶 圓表面保護用黏著帶捲取成輥狀。於排斥係數^過小之情 形時，由於矯正晶圓本身之翹曲之力少，故欠欠佳。另一 方面’若斥力α過大，料之剛性變得過強，將帶剥 帶本身難以彎自’薄膜研削後之晶圓容易破裂，故欠佳。 斥力α為腦/mm以下時，可獲得良好之剝離性能，較佳 為l〇N/mm以下，更佳為8N/ 勹以下。就抑制撓曲之方 面而呂，斥力a較佳為1N/mm以上。 又，即使半導體晶圓表面 削後之半導體晶圓之魅曲的剛性，==可抑制研 則會產生貼合有該黏著帶之半導體=者帶自身勉曲， 情形時，於貼合有該黏著帶之狀態 於此 發生搬送錯誤，或有半導體曰圓“ +導體曰曰圓時會 ’有於半導體晶圓研削時該晶圓 4。因 邊緣裂痕之情形。因此，A 產生邊緣碎屑或 黏著帶本身之翹曲，而將 曰曰圓表面保護用 、扶方向之拉伸斷裂伸長 10 201124503 率之差設為35%以下。藉此可降低黏著帶自身之翹曲。 ^所謂本發明中之環剛度，係指評價帶狀試驗片之排斥 係數及斥力之指標。環剛度可根據使本發明之半導體晶圓 表面保A用It著帶為環狀’以壓頭按壓該環狀試驗片而使 裱變形時從施加於壓頭之荷重而獲得。 本發明中之環剛度，例如可使用環剛度試驗機（商品 名’東洋精機公司製造)進行測量。環剛度係藉由以下之條 件（a)〜（c)測量。 〃 (a) 環（試驗片）形狀 長度50mni以上、寬度1〇mm (b) 壓頭之壓入速度 3.3mm/ sec (c) 壓頭之壓入量 自壓頭與環接觸之時刻起壓入5mm 本毛明中之半導體晶圓表面保護用黏著帶之斥力“， 係，以試驗片之每單位寬度換算由上述⑷獲得之負載荷重 而付者。又’半導體晶圓表面保護用黏著帶之排斥係數卜 係指將該斥力α除以試驗片之基材樹脂膜之平方所 值。 ^ 如圖1所示，本發明之半導體晶圓表面保護用黏著帶 20 ’於基材樹脂膜i與黏著劑層2之間具有後述之特 間樹脂層3。亦可進—步於點著劑層2上積層剝離 示）。 圖1所示之本發明之半導體晶圓表面保護用黏著帶， 201124503 例如可藉由下述方式製造：將構成中間樹脂層2之組成物 塗佈於剝離膜上，加以乾燥，而獲得中間樹脂層，然後將 該中間樹脂層轉印於基材膜丨上；藉由將中間樹脂層組成 物直接塗佈於基材樹脂膜i而形成中間樹脂層3，然後同樣 地將黏著劑層2轉印於中間樹脂層3上；或直接塗佈。 中間樹脂層組成物之基礎樹脂成分，就耐熱性之觀點 而。，可使用丙稀酸聚合物。丙烯酸聚合物，可舉出將以 下之（甲基）丙烯酸酯單體或（甲基）丙烯酸環烷基酯作為構成 成分者。作為單體使用之（甲基）丙烯酸烷基酯，例如可舉 出甲S曰 '乙酯、丙酯、異丙酯、丁酯、異丁酯、第二丁 酯 '第三丁酯、戊酯，異戊酯、己酯、庚酯、辛酯、2一乙 基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷基酯、十 一烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八 烷基酯、二十烷基酯、苄酯等碳數1〜30,尤其為碳數 18之（甲基）烷基酯等。作為單體使用之（甲基）丙烯酸環烷基 酉曰例如可舉出環戊酯、環己酯等。可將以此等單體之j 種或2種以上之單體作為構成成分使用之丙烯酸聚合物使 用作為中間樹脂成分之基礎樹脂成分。就增大交聯點間距 而k可可撓性之觀點而言，尤佳為甲基丙晞酸正丁酯（η ΒΜ Α)。此等（甲基）丙烯酸酯單體較佳為於丙烯酸聚合物 中作為主成分之構成成分（例如90〜1 00%)。 作為上述中間樹脂層組成物之基礎樹脂成分使用的丙 烯馱聚合物，可舉出以可與上述（甲基）丙稀酸烷基酯或環烷 基醋共聚合之其他單體作為構成成分的丙烯酸共聚物。作 12 201124503 為該例，可使用以下之單體1種或2種以上。 (1) 含羧基之單體 丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基 戊酯、亞甲基丁二酸、順丁烯二酸、反丁烯二酸、丁烯酸 等含羧基之單體 (2) 酸酐單體 順丁烯二酸酐、亞甲基丁二酸酐等酸酐單體 (3) 含羥基之單體 (甲基）丙烯酸2—羥基乙酯、（曱基）丙烯酸2 —羥基丙 酯、（曱基）丙烯酸4 —羥基丁酯、（曱基）丙烯酸6 —羥基己 酯、（甲基）丙烯酸8 —羥基辛酯、（甲基）丙烯酸ίο -羥基癸 酿、（曱基）丙烯酸12 —羥基月桂酯、丙烯酸（4 —羥基甲基環 己基）曱酯等含羥基之單體 並且，除上述單體以外，可使用以下多官能性之單體。 例如可舉出.己一醇二（曱基）丙稀酸g旨、（聚）乙二醇二（曱基） 丙烯酸酯、（聚）丙二醇二（甲基）丙烯酸酯、新戊二醇二（曱基） 丙稀酸醋、季戊四醇二（曱基）丙烯酸酯、三羥甲基丙烷三（甲 基）丙稀酸酯、季戊四醇三（甲基）丙烯酸酯、二季戊四醇六（甲 基）丙稀酸醋等。此等多官能性單體亦可使用1種或2種以 上。 上述丙烯酸聚合物，較佳為具有羥基與羧基。丙烯酸 聚合物之羥值較佳為！〜”，更佳為。此處所謂之羥 值，係指藉由根據JIS K 0070之方法測得之值。又，丙烯 駄聚合物之酸值較佳為i〜2〇，更佳為i〜丨5。此處，酸值 13 201124503 係指藉由JIS Κ 5407所記载之方法測得之值。 經基會與後述作為交聯劑使用之異氰酸酯交聯劑或異 ，聚氛酸酿（i_ya_te)交聯劑反應而使中間樹脂層^ 聯。又，缓基會與後述作為交聯劑使用之環氧交聯劑反應 而使中間樹脂層交聯。 &amp; …丙稀酸聚合物可藉由將i種或2種以上之單體混合物 進行聚合而獲得。聚合可藉由溶液聚合、乳化聚合、塊狀 聚合、懸浮聚合等任-種方式進行。丙稀酸聚合物之重量 千均分子量較佳為5萬以上，更佳為Μ萬〜_萬左右。 此處，丙烯酸聚合物之重量平均分子量可藉由後述之方法 而::定。⑤中間樹脂層組成物中，只要為與丙烯酸聚合物 相溶性良好者，則可摻合其他樹脂。 藉由將上述丙稀酸聚合物交聯，可對上述中間樹脂層 附加凝聚力。藉由對中間樹脂層附加凝聚力，貝 導體晶圓之厚度研削至100…下之後半導體晶圓之纽曲 =增加間樹脂層亦直接存在於基材樹脂膜層與黏 層之間，藉此可抑制半導體晶圓之勉曲。尤其於在半導體 晶圓表面形成聚醯亞胺膜之情形時，亦可發揮該效果。因 此，於中間樹脂層組成物中摻合交聯劑。交聯齊卜 述，對應於基礎樹脂成分’例如可舉出：異氛酸醋交聯劑、 異三聚氣酸醋交聯劑、環氧交聯劑、金屬聲合物交聯劑、 氣丙咬交聯劑及胺樹脂等。並且，於中間樹脂❹成物中， :於不損及本發明之目的之範圍β，根據期望而含有各種 添加成分。 14 201124503 又，中間樹脂層組成物，除上述丙烯酸聚合物以外， 可使用聚胺酯丙烯酸酯。聚胺酯丙烯酸酯，可舉出將以下 之（曱基）丙烯酸胺基甲酸酯單體作為構成成分者。例如可舉 出.（曱基）丙烯酸異莰基酯、（甲基）丙烯酸二環戊烯基酯、 丙烯酸酯苯基羥基丙酯等，此等可使用丨種或2種以上。 當形成中間層時，亦可將丙烯酸胺基甲酸酯系寡聚物以光 聚合性單體加以稀釋，塗佈並使其乾燥，藉由紫外線照射 等而使其發揮效果，此方法適合作為中間層之製膜方法。 聚胺酯丙烯酸酯較佳為具有羥基及羧基。聚胺酯丙烯 酸酯之羥值較佳為，更佳為1〜1〇。此處，羥值係指 藉由以下之JIS K 0070測得之值。又，聚胺酯丙烯酸酯之 酉文值較佳為1〜2〇，更佳為1〜1 $。此處，酸值係指藉由$ K 560 1 ~ 2 — 1中所記載之方法測得之值。 (羥值之測定方法（jIS K 0070)) (1) 所使用之試劑 •乙醯化試劑（乙駿酐—吡啶） • N/2氫氧化鉀一乙醇溶液 (2) 滴定方法 將4樣以乙醯化試劑加以乙醯化之後，以n/2氫氧化 鉀一乙醇溶液滴定過剩之乙酸。 (3) 計算式 藉由下式求出羥值。The amount of the wafer is also the diameter of the wafer. The angle of the wafer is 6 and A. The wafer with a diameter of 5 inches or 6 inches is the mainstream. Relatively, for this, in recent years, the diameter is 8 to 12 The processing of 半导体p-inch semiconductor wafers into semi-conducting 日 etc. The thickness and thickness of the semiconductor wafer are particularly broad in the field of NAND-type or NOR-type flash memory, or in the D memory of the memory memory 201124503. The tendency. For example, it is not uncommon for a semiconductor wafer to be used in a straight position. In the case where the thickness of the semiconductor 曰 ” 厚度 并 并 并 并 并 并 并 并 并 并 并 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 。 。 。 。 。 。 In the box: the t-conductor wafer is held by the robot arm from a special fixture called a wafer cassette, and the semiconductor wafer in the grinding machine is fixed by a circle. The grounded semiconductor is housed in a wafer cassette and transported to the next step. [If the semiconductor wafer is fixed, the semiconductor wafer cannot be smoothly processed, and the wafer is damaged.], If, in the case of the case, or the worst case, semi-conducting. χ, when the field is stored in the wafer cassette, the semiconductor wafer will have a mechanical arm in contact with the semiconductor wafer after the storage, and the semiconductor Japanese yen will be damaged. The problem is that the thin wafer after grinding is not stored in the wafer 'from the back grinding step to the dicing tape assembly step: (continuous device). Moreover, the mountain + t clothing is improved by crystal Round fixtures or robotic arms} Even if the wafer warpage is difficult to be affected by it. On the other hand, "Tsim Shame" has captured the following methods: When bonded to a semiconductor wafer, by Low applied to the semi-conducting day; the curvature of the semiconductor wafer is reduced in the circle. For example, in the patent document, a substrate layer and an adhesive layer disposed on the stress relaxation layer of the substrate are proposed, The adhesive sheet for peeling processing is used, and the base material is laminated to form a rigid film and a stress-relieving film. 4 201124503 Further, in Patent Document 2, the ruthenium contains a specific mark @ _ a type of substrate and adhesion The sheet of the agent layer, and the second layer: the adhesive layer for processing the intermediate layer of the elastic modulus, in Patent Document 3, the substrate film of 3.^ m ^ ^ b is composed of at least three layers, and the substrate film The outermost layer of the back surface Μ 5* r λλ L s 畀 The storage elastic modulus of the inner layer is φ, ^ ^ in the semiconductor wafer in the special target circumference, and the adhesive film is used. In Patent Document 4, U has a multilayered sheet with a specific material. However, when using the patented article # 卩 卩 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体The interface between the interface layer and the rigid film, ^ ^ T to the adhesive layer a complicated step of peeling off the interface between the tempered film or the layer constituting the peelable squeegee layer. Further, the adhesive layer and the stress relieving layer are formed by overlapping several layers, and the cushioning property is excessive, so When the 曰 曰 导体 导体 导体 导体 导体 导体 导体 导体 导体 导体 导体 导体 导体 导体 导体 导体 导体 导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体When the semiconductor wafer in which the polyimide film is formed is bonded to the back surface of the semiconductor wafer, if the thickness of the semiconductor wafer is (10) or less, the insulating film applied to the surface of the semiconductor wafer shrinks. In the case where the semiconductor wafer itself is bent (4), in the case where the semiconductor wafer is held in the wafer fixing jig, there is a problem that the semiconductor wafer is detached. In the case where the adhesive sheet for processing a semiconductor wafer of Patent Document 3 is bonded to a semiconductor wafer on which a polyimide film is formed, and the back surface of the semiconductor wafer is ground, it is consumed by transporting a crystal with an adhesive sheet. There is no question about the stomach. But when the semiconductor wafer is ground to a thin film of 201124503 below the thickness of the heart, there will be cases of edge cracks or cracks in the wafer. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2004-107644 (Patent Document No. JP-A-2004-107644) Patent Document 3: JP-A-2002-69396 Patent Document 4: JP-A-2006-264296 SUMMARY OF THE INVENTION [Problems of the Invention] An object of the present invention is to provide an adhesive tape for protecting a surface of a semiconductor wafer, which is formed by laminating the back surface of the wafer in a state in which the adhesive tape for surface protection of the semiconductor wafer is bonded to the semiconductor anode. For example, the inventors of the present invention have conducted intensive studies on the above-mentioned problems. As a result, it has been found that the following adhesive tape for surface protection of a semiconductor wafer can solve the above problems, and the adhesive tape for surface protection of a semiconductor wafer is passed. The base resin film and the base resin film contain an intermediate resin layer obtained by crosslinking an acrylic polymer and/or a polyamine from a base resin component of a urethane acrylate, and directly have an adhesive layer. The repulsive force α and the row per unit width obtained by measuring the load of the ring stiffness (bop out of (3)) of the semiconductor (4) obtained by (4) (4) (4) under specific conditions The repulsion coefficient r is within a specific range' and the difference between the longitudinal and transverse tensile elongation at break is below a certain value. The present invention has been completed based on this finding. That is, the present invention provides the following invention. 1 &gt; An adhesive tape for protecting a surface of a semiconductor wafer, which comprises an acrylic polymer and/or a polyacrylamide on a substrate resin film and a base resin component; The intermediate resin layer which is crosslinked and straight 201124503 is obtained by dividing the load of the ring stiffness measured by the following conditions (a) to (d) by the thickness of the substrate without the adhesive layer, and is characterized by: The repulsive force per unit width obtained by the weight of the adhesive tape for surface protection of the semiconductor wafer is 〇mN/mm3 or more, the repulsive force is μ UmN/mm or less, and the longitudinal direction and the lateral direction are obtained. The difference in tensile elongation at break is below μ%. (a) Device ring stiffness tester (trade name, manufactured by Toyo Seiki Co., Ltd.) (b) Ring (test piece) has a shape length of 50 mm or more and a width of 1 mm (c) Pressing speed of the indenter 3.3mm/sec (d) The press-in amount of the semiconductor wafer surface protection adhesive tape of 5 mm &lt;2&gt;&lt;1&gt;, wherein the acrylic polymer of the above intermediate resin layer has a hydroxyl group and a carboxyl group. &lt;3&gt; The adhesive tape for semiconductor wafer surface protection according to <1>, wherein the polyurethane resin acrylate of the above intermediate resin layer has a hydroxyl group and a carboxyl group. &lt;4 &gt;&lt; 1 &gt; to &lt; 3 The adhesive tape for semiconductor wafer surface protection according to any one of the invention, wherein the intermediate resin layer has a glass transition temperature of -10 ° C to 30 ° C after crosslinking. The adhesive tape for semiconductor wafer surface protection according to any one of <1> to <4>, wherein the base resin film is a polyester resin film. &lt;6&gt; The adhesive tape for semiconductor wafer surface protection according to &lt;5&gt;, wherein the polyester resin film is a polyethylene terephthalate film in 201124503. &lt;7&gt; The adhesive tape for protecting a semiconductor wafer surface according to &lt;5&gt; or &lt;6&gt;, wherein the thickness of the polyester resin film is 25 to 75 &quot; m. &lt;8&gt; The adhesive tape for semiconductor wafer surface protection according to any one of &lt;1&gt; to &lt;7&gt;, wherein the above-mentioned semiconductor wafer surface protective adhesive tape is a pressure-sensitive adhesive tape, 20 to 2rc The adhesion to the sus grinding surface is 〇5N/25mm or more, and the adhesion to the coffee grinding surface at 50t is 〇·5Ν/25mm or less. &lt;9&gt; The adhesive tape for semiconductor wafer surface protection according to <8>, wherein the weight average molecular weight of the base resin constituting the adhesive layer is 10,000 or more. &lt;::〉...to...to&lt;7&gt; Any of the above-mentioned adhesive layers for the surface protection of the semiconductor wafer surface protection layer may cause the adhesive force to be lowered due to the irradiation of radiation. &lt;11&gt; The adhesive tape for semiconductor wafer surface protection of &lt;1&gt; is formed by using a base resin containing a polymer as a main component, and the following polymer contains The main chain has, as a constituent unit, an acrylic monomer having more than one group containing a polymerizable carbon-carbon double bond. Even when the back surface of the semiconductor wafer for protecting the surface of the semiconductor wafer of the present invention is ground on the surface of the semiconductor wafer, and the thin wafer of 100" or less is used, the semiconductor can be lowered. The war of the circle. Therefore, it is possible to reduce the warpage caused by the semiconductor wafer: the falling error during the wafer feeding can be carried out unimpeded to the next step, that is, the cutting tape or the cutting, the wafer bonding film, and the surface protection tape. Before peeling off: ' 8 201124503 The adhesive tape for semiconductor wafer surface protection of the present invention can be used for semiconductor wafer processing which is required for film grinding such as dram or NAND flash. The above and other features and advantages of the present invention will become apparent from the following description. [Embodiment] A preferred semiconductor wafer surface protective adhesive tape of the present invention will be described with reference to the drawings. Fig. 2 is a schematic cross-sectional view showing a preferred embodiment of the adhesive tape for surface protection of a semiconductor wafer of the present invention. It is understood from the above that the base resin film i and the adhesive layer 2 on the base resin film i are formed on the base resin film 1 through the intermediate resin layer 3. The semiconductor wafer surface protective adhesive tape of the present invention can suppress the amount of surface warpage of the semiconductor wafer even when the semiconductor wafer with the insulating germanium represented by the polyimide is ground into a film. Usually, an insulating film such as polyimide having a number of centers around the center of the semiconductor is formed. : = Mostly by heating (4), there is residual stress at the surface of the semiconductor wafer. '", before the backside of the semiconductor wafer is ground, the semiconductor wafer is thicker, 1 has rigidity, because: the semiconductor (four) is curved, if the semiconductor wafer is polished: the rigidity of the semiconductor wafer itself is reduced. (4) The polyimide film* is found to be bent from the heat-shrinkage such as the cross-linking of the film, and the warp of the half-thousand conductor of the present invention is warped. The grinding tape of the present invention exerts a warpage correction ratio exceeding the residual stress of the above-mentioned 201124503 film, thereby reducing the warpage of the semiconductor wafer after grinding. The adhesive tape for surface protection of a semiconductor wafer of the present invention is peeled off after the back surface of the semiconductor wafer is ground. The adhesive tape for surface protection of a semiconductor wafer of the present invention is obtained from the ring stiffness measured under the following conditions. The repulsive force α of the unit width is divided by the square of the thickness of the substrate to obtain a repulsive coefficient r of 100 N/mm 3 or more, the repulsive force α is 18 N/mm or less, and the difference between the tensile elongation at break in the longitudinal direction and the transverse direction is Less than 35%八文和/布--- 〜j W々, %% and thousands of conductor wafer surface protection adhesive tape is taken up into a roll shape. When the rejection coefficient is too small, the warpage of the wafer itself is corrected. On the other hand, if the repulsive force α is too large, the rigidity of the material becomes too strong, and it is difficult to bend the strip itself. The wafer after the film is easily broken is not good, so the repulsive force α is When the brain/mm or less, good peeling performance is obtained, and it is preferably l〇N/mm or less, more preferably 8 N/勹 or less. In terms of suppressing the deflection, the repulsive force a is preferably 1 N/mm or more. Moreover, even if the rigidity of the embossed semiconductor wafer after the surface of the semiconductor wafer is removed, == can be suppressed, and the semiconductor with the adhesive tape is twisted, and the case is bonded. In the state of the adhesive tape, a transfer error occurs, or the semiconductor is rounded. "When the conductor is rounded, the wafer 4 is formed when the semiconductor wafer is ground." Due to the edge cracks. Therefore, A produces edge warpage or warpage of the adhesive tape itself, and the difference between the rate of the round surface protection and the tensile elongation at break of the direction is set to 35% or less. Thereby, the warpage of the adhesive tape itself can be reduced. The ring stiffness in the present invention means an index for evaluating the rejection coefficient and the repulsive force of the strip test piece. The ring stiffness can be obtained from the load applied to the indenter when the crucible is pressed by pressing the annular test piece with the indenter when the surface of the semiconductor wafer of the present invention is held in a ring shape. The ring rigidity in the present invention can be measured, for example, using a ring stiffness tester (trade name "Toyo Seiki Co., Ltd."). The ring stiffness is measured by the following conditions (a) to (c). 〃 (a) Ring (test piece) has a shape length of 50 mni or more and a width of 1 mm (b) Pressing speed of the indenter is 3.3 mm/sec (c) The indentation pressure of the indenter is pressed from the moment when the indenter is in contact with the ring. The repulsive force of the adhesive tape for surface protection of semiconductor wafers in the 5mm of the present invention is "reduced by the load of the load obtained by the above (4) per unit width of the test piece. "Rejection of the adhesive tape for surface protection of semiconductor wafers" The coefficient is the value obtained by dividing the repulsive force α by the square of the base resin film of the test piece. As shown in Fig. 1, the adhesive tape 20' for the surface protection of the semiconductor wafer of the present invention is adhered to the base resin film i. Between the agent layers 2, there will be an inter-layer resin layer 3 to be described later. The layer of the semiconductor wafer surface protection tape of the present invention shown in Fig. 1 may be further removed. It can be produced by coating a composition constituting the intermediate resin layer 2 on a release film, drying it to obtain an intermediate resin layer, and then transferring the intermediate resin layer onto the substrate film enamel; Applying the intermediate resin layer composition directly to the base The intermediate resin layer 3 is formed by the resin film i, and then the adhesive layer 2 is similarly transferred onto the intermediate resin layer 3; or directly applied. The base resin component of the intermediate resin layer composition is in terms of heat resistance. An acrylic acid polymer can be used, and the following (meth) acrylate monomer or cycloalkyl (meth) acrylate may be used as a constituent component of the acrylic polymer. Examples of the alkyl acrylate include methyl sulfonate, propyl ester, isopropyl ester, butyl ester, isobutyl ester, second butyl ester 'tert-butyl ester, amyl ester, isoamyl ester, hexyl ester, Heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, decyl ester, decyl ester, isodecyl ester, undecyl ester, undecyl ester, tridecyl ester, tetradecyl ester , cetyl ester, octadecyl ester, eicosyl ester, benzyl ester, etc., having a carbon number of 1 to 30, especially a carbon number of 18 (meth)alkyl ester, etc. Examples of the cycloalkyl acrylate of the acryl are, for example, cyclopentyl ester, cyclohexyl ester, etc., or a monomer of two or more kinds of such monomers may be used as a constituent. The acrylic polymer to be used is a base resin component as an intermediate resin component. From the viewpoint of increasing the cross-linking point spacing and k-cocoa flexibility, n-butyl methacrylate (η ΒΜ Α) is particularly preferable. The (meth) acrylate monomer is preferably a constituent component (for example, 90 to 100%) as a main component in the acrylic polymer. The acrylonitrile polymer used as the base resin component of the intermediate resin layer composition, An acrylic copolymer containing, as a constituent component, another monomer copolymerizable with the above alkyl (meth) acrylate or cycloalkyl vine can be mentioned. 12 201124503 For this example, the following monomers 1 can be used. (2) carboxyl group-containing monomer acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxy amyl acrylate, methylene succinic acid, maleic acid, fumaric acid, butyl a carboxyl group-containing monomer such as an olefinic acid (2) an acid anhydride monomer anhydride anhydride, methylene succinic anhydride or the like, an acid anhydride monomer (3) a hydroxyl group-containing monomer (meth)acrylic acid 2-hydroxyethyl ester, ( Hydrazinyl 2-hydroxypropyl acrylate, (fluorenyl) propyl Acid 4-hydroxybutyl ester, 6-hydroxyhexyl (meth)acrylic acid, 8-hydroxyoctyl (meth)acrylate, (meth)acrylic acid ε, hydroxy oxime, (mercapto)acrylic acid 12-hydroxylauryl ester A hydroxyl group-containing monomer such as (4-hydroxymethylcyclohexyl)decyl acrylate or the like, and the following polyfunctional monomer may be used in addition to the above monomers. For example, hexanol di(indenyl)acrylic acid, (poly)ethylene glycol di(decyl) acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol (mercapto) acrylic acid vinegar, pentaerythritol di(mercapto) acrylate, trimethylolpropane tri(methyl) acrylate, pentaerythritol tri(meth) acrylate, dipentaerythritol hexa(methyl) propyl Dilute vinegar and so on. These polyfunctional monomers may be used alone or in combination of two or more. The above acrylic polymer preferably has a hydroxyl group and a carboxyl group. The hydroxyl value of the acrylic polymer is preferably! Preferably, the hydroxyl value herein refers to a value measured by the method according to JIS K 0070. Further, the acid value of the propylene fluorene polymer is preferably i 2 Å, more preferably i. ～5. Here, the acid value 13 201124503 is a value measured by the method described in JIS Κ 5407. The isocyanate cross-linking agent used as a crosslinking agent, which is described later, may be used as a cross-linking agent. (i_ya_te) The crosslinking agent reacts to form an intermediate resin layer. Further, the slow-radical group reacts with an epoxy crosslinking agent used as a crosslinking agent to crosslink the intermediate resin layer. &amp; Acryl acid polymer It can be obtained by polymerizing i or two or more kinds of monomer mixtures. The polymerization can be carried out by any one of solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, etc. The weight of the acrylic polymer is thousands. The average molecular weight is preferably 50,000 or more, more preferably about 10,000 to 10,000. Here, the weight average molecular weight of the acrylic polymer can be determined by the method described later: If the compatibility with the acrylic polymer is good, other resins may be blended. The above-mentioned acrylic acid polymer is crosslinked to add cohesive force to the intermediate resin layer. By adding cohesive force to the intermediate resin layer, the thickness of the beast conductor wafer is ground to 100... It also exists directly between the base resin film layer and the adhesive layer, thereby suppressing the distortion of the semiconductor wafer. This effect can also be exhibited especially when a polyimide film is formed on the surface of the semiconductor wafer. A cross-linking agent is blended in the intermediate resin layer composition. Cross-linking, corresponding to the base resin component, for example, an oleic acid cross-linking agent, a heterotrimeric gas vinegar cross-linking agent, and a ring An oxygen crosslinking agent, a metal alkene crosslinking agent, an aerobic crosslinking agent, an amine resin, etc., and in the intermediate resin composition, as long as the range β of the object of the present invention is not impaired, as desired Further, the intermediate resin layer composition may be a polyurethane acrylate other than the above acrylic polymer. The polyurethane acrylate may be exemplified by the following (mercapto) urethane acrylate. As a component, for example, (mercapto)isodecyl acrylate, dicyclopentenyl (meth)acrylate, phenyl hydroxypropyl acrylate, etc. may be mentioned, and these species or two kinds may be used. When the intermediate layer is formed, the urethane acrylate oligomer may be diluted with a photopolymerizable monomer, coated, dried, and rendered effective by ultraviolet irradiation or the like. It is suitable as a film forming method for the intermediate layer. The polyurethane acrylate preferably has a hydroxyl group and a carboxyl group. The hydroxyl value of the polyurethane acrylate is preferably, more preferably, 1 to 1 Torr. Here, the hydroxyl value means the following JIS The value measured by K 0070. Further, the value of the polyurethane acrylate is preferably 1 to 2 Å, more preferably 1 to 1 $. Here, the acid value is referred to by $ K 560 1 ~ 2 - 1 The value measured by the method described. (Method for measuring hydroxyl value (jIS K 0070)) (1) Reagents used • Ethyl sulfonating reagent (acetyl phthalate - pyridine) • N/2 potassium hydroxide monoethanol solution (2) Titration method 4 After the acetamidine reagent was acetated, the excess acetic acid was titrated with a n/2 potassium hydroxide-ethanol solution. (3) Calculation formula The hydroxyl value is obtained by the following formula.

羥值=((VB — V)xFx28.5)/ S 其中： 15 201124503 V :該試驗之N/ 2氫氧化鉀一乙醇溶液之滴定量（mL) VB:空白試驗之N/2氫氧化鉀一乙醇溶液之滴定量 (mL) F : N/2氫氧化钟一乙醇溶液之係數 S :試樣採集量（g) AV :試樣之酸值（mgKOH/g) 羥基會與後述作為交聯劑使用之異氰酸醋系交聯劑或 異三聚氰酸酯系交聯劑反應而使中間樹脂層交聯。又，羧 基會與後述作為交聯劑使用之環氧系交聯劑反應而使中間 樹脂層交聯。於使用聚胺酯丙烯酸酯作為中間樹脂層之情 形時，與上述丙烯酸聚合物之情形相同，亦可對中間樹脂 層附加凝聚力，尤其即使於在將厚度研削至1〇〇“m以下之 半導體晶圓表面形成聚醯亞胺膜之情形時，亦可發揮該效 果。 藉由本發明之半導體晶圓表面保護用黏著帶之中間樹 脂層，對基材樹脂膜具有緩衝十生，並且可緩和該點著帶貼 合時所施加之張力。中間樹脂層較佳為相較於黏著劑層， 彈性模數更高者。 為了具有常溫下之剛性，交聯後之中間樹脂層之藉由 DSC而得之玻璃轉移點（Tg)之較佳範圍為—1〇。匸〜3〇。匸，更 佳為0°C〜2(TC。若中間層之交聯後之玻璃轉移溫度過低， 則半導體晶圓表面保護用黏著帶具有柔軟性，故有緩衝性 提高，但薄膜研削性下降之情形。於乾式抛光等之薄膜晶 圓之最後精加工步驟中，對半導體晶圓施加高㈣。若薄 16 201124503 膜研削性低，則於該高壓力下，由於表面保護用黏著帶之 下沈效果而導致半導體晶圓破裂。尤其於將半導體晶圓研 削至50”以下之厚度時’ &amp; 了提高半導體晶圓之強度而 將背面精加工成鏡面狀態，因此進行乾式拋光、化學機械 拋光或超細研磨（p〇ligrinding)等，從而有因表面保護用黏著 帶下沈而引起之裂縫變多之情形。 一另-方面，若中間樹脂層之交聯後之破璃轉移溫度過 面，則緩衝性下降，當對附有圖案之晶圓進行加工時 2會使得半導體晶圓發生裂縫。又，亦可對中間樹脂層組 成物使用精由放射線照射而硬化之材 使其硬化而調整中間樹脂層之硬度。心放射線照射 厚产乾Γ Γ研肖1步驟中之緩衝性觀點而言，中間樹脂層之 厚度較佳為10〜100㈣，更佳為20〜叫m’再更 〜若中間樹脂層過薄，則背面 '' 變小，若中門谢“ r 研則步驟時之緩衝性 ^間㈣層過厚，關膜刊時晶圓由 果而自中央部裂縫之機率變高。 下沈政 使用之拋光步驟中尤其顯著，㈣由^膜研削時所 比，此等對晶圓施加之壓力二、=疋：於與研削步驟相 積層有複數層之構成。.中間樹脂層亦可為 基材樹脂膜，係指構成本發明之 用黏著帶之材料(種類)中彈性模數最高之居。面保護 =*進行半導面研削:=可 A材接… 制半導體晶圓之翹曲。尤其 “膜必需具有半導體晶圓之背面研削加工=， 4 面研 17 201124503 磨加工時對水洗等之耐水性’並且必需具有僅可保持半導 體晶圓之柔軟性。1重要為：對於由半導體晶圓上之聚醯 亞胺等絕緣膜中的殘留應力所引起之半導體晶圓之翹曲應 力可發揮矮正力。基材樹脂·，只要為滿足此等特性者， 則無特別限制。尤其就可橋正薄膜研削後之半導體晶圓勉 曲之方面而言，較佳為由含有聚對酞酸乙二酯（ρΕτ)、聚萘 一曱酸乙一酯(PEN)、聚對苯二甲酸丁二酯(ρΒΤ)等聚酯系 樹知之树脂組成物所構成者或聚醯亞胺。更佳為或 PEN。右將聚s旨系樹脂用於相對於黏著劑層為相反側之最外 層則亦可同時賦予耐熱性，故較佳。於此情形時，於將 本發明之半導體晶圓表面保護用黏著帶貼合於半導體晶圓 表面之狀態下’以該帶之基材樹脂膜面吸附於半導體晶圓 保持構件（例如卫作盤）時，即使於該半導體晶圓冑面貼合切 黏B曰帶時進行加# ’亦可減少該表面保護用黏著帶向工 作盤融合之情形。因此可減少晶圓裂縫。 又’於聚醋系樹脂中’可使用摻合有比聚酯系樹脂更 ，柔軟性之樹脂而成之樹脂組成物作為基材樹脂膜。藉由 製成換。# 2 #以上之樹脂的樹脂組成⑯，可製成具有剛 I·生及柔軟性之基材。例 &gt;，基材樹脂膜，可使用聚醋系樹 脂中摻合有熱塑性彈性體之樹脂組成物。 於此情形時’較佳為貼合有本發明之半導體晶圓表面 保濩用黏著帶的附冑8 #吋聚醯亞胺膜之半導體晶圓之翹 曲橋正率為75%以下’且於表面形成有聚醯亞胺膜之8英 寸直瓜之半導體晶圓表面貼合表面保護用黏著帶，貼合有 18 201124503 將該半導體晶圓背面研削至5〇 &quot; m厚後之該黏著帶的該8 英时直徑晶圓之順向魅曲量為2〇mm以下。 於使用放射線硬化性之樹脂組成物作為後述黏著劑層 之情形時，基材樹脂膜較佳為放射線穿透性者。基材樹脂 膜之厚度並無特別限制，較佳為1〇〜5〇〇 &quot; m，更佳為4〇〜 500 μ m，尤佳為80〜25〇v m。再者，於基材膜3為聚酯系 樹脂之情形時，基材樹脂膜之厚度較佳為丨2〜8〇私m。 構成黏著劑層之基礎樹脂，可使用習知者。其中較佳 為丙烯酸系黏著劑，具體而言，係使用選自以丙烯酸酯作 為主要構成單體單元之均聚物及共聚物中的丙烯酸系聚合 物與其他官能性單體之共聚物及此等聚合物之混合物。例 如’丙稀酸醋，較佳為可使用丙烯酸乙酯、丙烯酸丁酯、 丙烯酸2 —乙基己酯、丙烯酸縮水甘油酯、丙烯酸2 —羥基 乙醋等’以及將上述丙烯酸酯替換成例如曱基丙烯酸酯者 等。 並且為了控制黏著性或凝聚力，亦可使丙烯酸或甲基 丙烯酸、丙浠腈、乙酸乙烯酯等單體共聚合。 如上述之黏著劑，可藉由進一步使用交聯劑而將黏著 力與凝聚力設定為任意值。此種交聯劑，有多元異氰酸酯 化合物、多元環氧化合物、多元氮丙啶化合物、螯合化合 物等。多元異氰酸酯化合物，具體係使用曱笨二異氰酸酯、 一苯基曱院二異氰酸酯、六亞曱基二異氰酸酯、異佛爾酮 一異氰酸S旨及此等之加合物型者等。 多70環氧化合物’具體係使用乙二醇二縮水甘油醚、 19 201124503 對苯二曱酸二縮水甘油酯丙烯酸酯等。多元氮丙啶化合 物，具體係使用三-_2,4,6_ (卜氮丙咬基）^5 一三卩井、 三[1 一（2—甲基）一氮丙啶基]氧化膦、六π—(2—曱基氮 丙啶基]三膦三畊等。又’螯合化合物，具體係使用乙醯乙 酸乙酯二異丙醇鋁、三（乙基乙醯乙酸）鋁等。 使用於本發明之+導體晶圓纟面保護用$ $帶之黏著 劑層，可適當使用藉由放射線照射使黏著力下降而剝離之 放射線硬化型黏著劑、與不會因放射線而硬化之黏著劑中 的任纟於本說明書中，將不會因放射線而硬化之黏著 劑稱為感壓型黏著帶。於黏著劑為感壓型之情形時，較佳 為’ 2〇〜25。。下之冑SUS研磨面之黏著力為0.5N/25mm 以上’且5(TC下之對sus研磨面之黏著力為〇 5ν/25^ 、下右20 25 C下之對SUS研磨面之黏著力過低，則保 持力不充分，力晶圓之背面研削時，晶圓有可能偏離或裂 縫。較佳為20〜25。(：下之對sus研磨面之黏著力為丄〇N/ 25 mm以上。 通*，感壓型黏著帶係加熱而剝離。若5 0 °C下之由加 熱剝離引起之對SUS研磨面之黏著力過大，則有對薄膜研 削後之剝離產生阻礙而引起晶圓裂縫之情形。本發明之感 壓型黏著帶較佳為於下之對SUS280研磨面之黏著力 為 0.3N/25mm 以下。 再者，於本發明中，所謂rsus研磨面」，係指對jis G 4305中所規定之SUS3〇4鋼板，使用R Μ”之 唬粗糙度之研磨紙並基於JIS Z 0237進行精加工者。 20 201124503 黏著劑為感壓型時之基礎樹脂之重量平均分子量产 佳為Η)。萬以上。若分子量過小，則有機性之;質= 易附著於晶圓表面’故欠佳。分子量之上限並無特別限制， 右考慮聚合之容易程度等’則重量平均分子量較佳為“Ο 萬以下。 重量平均分子量可藉由下述條件之GPC(Gel Permeation Chromatograph，凝膠滲透層析法）來測量。 裝置：HLC—8120GPC(商品名，丁〇8〇11公^製造） 管柱：TSK gel Super HM-H/H40〇0/H3〇〇〇/ H20〇〇(商品名，T〇s〇h公司製造） 流量：0.6mL/min 濃度：0.3質量％Hydroxyl value = ((VB - V)xFx28.5) / S where: 15 201124503 V: titration of the N/ 2 potassium hydroxide-ethanol solution of the test (mL) VB: N/2 potassium hydroxide of the blank test Dilution amount of one ethanol solution (mL) F : coefficient of N/2 hydroxide-ethanol solution S: sample collection amount (g) AV: acid value of sample (mgKOH/g) Hydroxyl group will be crosslinked as described later The isocyanate-based crosslinking agent or the isocyanurate crosslinking agent used in the agent is reacted to crosslink the intermediate resin layer. Further, the carboxyl group is allowed to react with the epoxy-based crosslinking agent used as a crosslinking agent described later to crosslink the intermediate resin layer. In the case where polyurethane ester acrylate is used as the intermediate resin layer, as in the case of the above acrylic polymer, cohesive force may be added to the intermediate resin layer, particularly even when the thickness is ground to a semiconductor wafer surface of 1 μm or less. This effect can also be exhibited in the case of forming a polyimide film. The intermediate resin layer of the adhesive tape for surface protection of a semiconductor wafer of the present invention has a buffer for the base resin film and can alleviate the point. The tension applied during the bonding. The intermediate resin layer is preferably higher in modulus of elasticity than the adhesive layer. In order to have rigidity at normal temperature, the intermediate resin layer after crosslinking is obtained by DSC. The preferred range of the transfer point (Tg) is -1 〇. 匸~3 〇. 匸, more preferably 0 ° C 〜 2 (TC. If the cross-linking glass transition temperature of the intermediate layer is too low, the semiconductor wafer The surface protection adhesive tape has flexibility, so that the cushioning property is improved, but the film grinding property is lowered. In the final finishing step of the thin film wafer such as dry polishing, the semiconductor wafer is applied with a high (four). 6 201124503 Low film grinding property, under this high pressure, the semiconductor wafer is broken due to the sinking effect of the surface protection adhesive tape, especially when the semiconductor wafer is ground to a thickness of 50" or less. The strength of the semiconductor wafer is finished to the mirror surface state, so dry polishing, chemical mechanical polishing, or ultra-fine polishing (p〇ligrinding) is performed, so that cracks due to sinking of the surface protection adhesive tape are increased. In other cases, if the cross-linking temperature of the intermediate resin layer crosses the surface, the cushioning property is lowered, and when the patterned wafer is processed, the semiconductor wafer is cracked. It is also possible to adjust the hardness of the intermediate resin layer by using a material which is hardened by radiation irradiation to harden the intermediate resin layer composition. The core radiation is irradiated with a thick dry cognac. The cushioning property in the step 1 of the Yanxiaoxiao is an intermediate resin. The thickness of the layer is preferably 10 to 100 (four), more preferably 20 to m' and then more ~ if the intermediate resin layer is too thin, the back '' becomes smaller, if the middle door thankes "r The thickness of the (4) layer is too thick, and the probability of the wafer from the central part of the film is high. The polishing step used by Shen Shenzhen is particularly remarkable. (4) Compared with the film, the wafer is compared. The applied pressure is two, = 疋: a layer having a plurality of layers laminated on the grinding step. The intermediate resin layer may also be a base resin film, which means the elastic modulus in the material (type) constituting the adhesive tape of the present invention. The highest level. Surface protection = * Semi-guided surface grinding: = A material can be connected... The warpage of the semiconductor wafer is made. In particular, "The film must have the backside of the semiconductor wafer.", 4 face grinding 17 201124503 It is necessary to maintain the flexibility of the semiconductor wafer only for the water resistance of water washing, etc. 1. It is important for the semiconductor wafer caused by residual stress in an insulating film such as polyimide on a semiconductor wafer. The bending stress can exert a short positive force. The base resin is not particularly limited as long as it satisfies these characteristics. In particular, in terms of distortion of the semiconductor wafer after the bridge film is ground, it is preferably composed of polyethylene terephthalate (ρΕτ), polyethylene naphthoate (PEN), poly(p-phenylene terephthalate). A polyester resin such as butylenedicarboxylate (ρΒΤ) is a composition of a resin composition or a polyimine. Better or PEN. It is preferred that the polys-based resin is used for the outermost layer on the opposite side with respect to the adhesive layer, and heat resistance can be imparted at the same time. In this case, the semiconductor wafer surface protective adhesive tape of the present invention is attached to the surface of the semiconductor wafer by the substrate resin film surface of the tape. When the semiconductor wafer is bonded to the surface of the semiconductor wafer, the addition of the adhesive tape can reduce the adhesion of the surface protective adhesive tape to the work disk. Therefore, wafer cracks can be reduced. Further, as the base resin film, a resin composition obtained by blending a resin having a softer property than a polyester resin can be used. Made by making a change. The resin composition 16 of # 2 # or more resin can be made into a substrate having a sturdiness and flexibility. In the case of the base resin film, a resin composition in which a thermoplastic elastomer is blended in a polyester resin can be used. In this case, it is preferable that the positive rate of the warp bridge of the semiconductor wafer of the attached 8 #吋 polyimide film of the semiconductor wafer surface-protecting adhesive tape of the present invention is 75% or less. The surface of the semiconductor wafer surface of the 8-inch straight melon formed with the polyimide film on the surface is bonded to the surface protection adhesive tape, and the surface of the semiconductor wafer is ground to the thickness of 5 〇 &quot; m thick. The amount of forward enchantment of the 8 inch diameter wafer with the tape is less than 2 mm. When a radiation curable resin composition is used as the adhesive layer described later, the base resin film is preferably a radiation penetrability. The thickness of the base resin film is not particularly limited, and is preferably 1 〇 to 5 〇〇 &quot; m, more preferably 4 〇 to 500 μ m, and particularly preferably 80 to 25 〇 v m. Further, in the case where the base film 3 is a polyester resin, the thickness of the base resin film is preferably 丨2 to 8 Å. As the base resin constituting the adhesive layer, a conventional one can be used. Among them, an acrylic adhesive is preferable, and specifically, a copolymer of an acrylic polymer selected from a homopolymer and a copolymer having acrylate as a main constituent monomer unit and another functional monomer is used. a mixture of equal polymers. For example, 'acrylic acid vinegar, preferably ethyl acrylate, butyl acrylate, 2-ethylhexyl acrylate, glycidyl acrylate, 2-hydroxyethyl acrylate or the like can be used, and the above acrylate is replaced with, for example, hydrazine. Acrylates, etc. Further, in order to control adhesion or cohesive force, monomers such as acrylic acid, methacrylic acid, acrylonitrile, and vinyl acetate may be copolymerized. As the above-mentioned adhesive, the adhesive force and the cohesive force can be set to arbitrary values by further using a crosslinking agent. Such a crosslinking agent may, for example, be a polyvalent isocyanate compound, a polyvalent epoxy compound, a polyaziridine compound, a chelate compound or the like. The polyvalent isocyanate compound is specifically selected from the group consisting of bismuth diisocyanate, phenyl fluorene diisocyanate, hexamethylene diisocyanate, isophorone monoisocyanate S and the like. The poly 70 epoxy compound 'specifically uses ethylene glycol diglycidyl ether, 19 201124503 terephthalic acid diglycidyl acrylate, and the like. a polyaziridine compound, specifically using tri-_2,4,6-(aza-propylidene)^5-three-dimensional well, tris[1-(2-methyl)-aziridine]phosphine oxide, six Π-(2-mercaptoaziridine)triphosphine, three-till, etc., and 'chelating compound, specifically using ethyl acetate, aluminum diisopropylate, aluminum tris(ethylacetate), etc. In the adhesive layer of the +conductor wafer of the present invention, the adhesive layer of the adhesive tape can be suitably used, and the radiation-curable adhesive which is peeled off by the radiation irradiation to be peeled off and the adhesive which does not harden by radiation can be suitably used. In the present specification, an adhesive which is not hardened by radiation is referred to as a pressure-sensitive adhesive tape. When the adhesive is a pressure sensitive type, it is preferably '2〇~25. The adhesion of 胄SUS polished surface is 0.5N/25mm or more' and 5 (the adhesion force to sus grinding surface under TC is 〇5ν/25^, and the adhesion to SUS polishing surface under lower right 20 25 C is too low) If the holding force is insufficient, the wafer may be deviated or cracked when it is ground on the back side of the wafer. It is preferably 20 to 25. (The following is the surface of the sus The force is 丄〇N/ 25 mm or more. The pressure-sensitive adhesive tape is heated and peeled off. If the adhesion to the SUS polished surface caused by heat peeling at 50 °C is too large, the film is ground after the film is ground. In the present invention, the pressure-sensitive adhesive tape of the present invention preferably has an adhesion force to the SUS280 polished surface of 0.3 N/25 mm or less. Further, in the present invention, the so-called rsus "Grinding surface" refers to a SUS3〇4 steel plate specified in jis G 4305, which is finished by using R Μ 唬 roughness and grinding paper and is finished based on JIS Z 0237. 20 201124503 When the adhesive is a pressure sensitive type The weight average molecular weight of the base resin is preferably Η). If the molecular weight is too small, the organic content; the mass = easy to adhere to the surface of the wafer is not preferable. The upper limit of the molecular weight is not particularly limited, and the polymerization is considered right. The ease of weighting and the like 'the weight average molecular weight is preferably 10,000 or less. The weight average molecular weight can be measured by GPC (Gel Permeation Chromatograph) under the following conditions. Apparatus: HLC-8120GPC (trade name) , Ding Hao 8 ^ 11 male, Ltd.) Column: TSK gel Super HM-H / H40〇0 / H3〇〇〇 / H20〇〇 (trade name, manufactured by T〇s〇h) Flow rate: 0.6mL / min Concentration: 0.3% by mass

注入量：20 // L 管柱溫度：40°C 又，於本發明中可使用放射線硬化型之黏著劑作為 構成黏著劑層之黏著劑。其中，構成黏著劑層之黏著劑， 較佳為使用以下述聚合物（以下稱為聚合物（a))作為主成分 之基礎樹脂而成，該聚合物含有對主鏈具有含放射線聚1 性碳一碳雙鍵之基的丙烯酸系單體作為構成單元。於本說 明書中’亦將該聚合物（a)稱為反應性聚合物。上述聚合物 (a)可為以任意方式製造者，例如可舉出：使由（曱基）丙稀酸 酿、含羥基之不飽和化合物、含羧基之不飽和化合物等構 成之共聚物（a 1)之碳鏈作為主鏈，使具有可對共聚物（al)所 具有之官能基進行加成反應的官能基及碳—碳雙鍵之化合 C ad 21 201124503 物（a2)進行加成反應而獲得者等β 上述（甲基）丙烯酸酯’可列舉：碳數6〜12之丙烯酸己 酯、丙烯酸正辛酯 '丙烯酸異辛酯、丙烯酸2一乙基己酯、 丙稀酸十一烧基S旨、丙稀酸癸醋，或碳數5以下之單體即 丙烯酸戊酯' 丙烯酸正丁酯、丙烯酸異丁酯、丙烯酸乙酯、 丙烯酸甲酯或與該等相同之甲基丙烯酸等。於此情形時， 使用碳數越大之單體作為單體，則玻璃轉移點越低，因此 可製作所需之玻璃轉移點者。又，除玻璃轉移點以外，為 了 k尚相溶性與各種性能’亦可於5質量％以下之範圍内摻 合乙酸乙烯酯、苯乙烯、丙烯腈等具有碳一碳雙鍵之低分 子化合物。 又，含羥基之不飽和化合物之例，可舉出：丙烯酸2 一羥基乙酯 '甲基丙烯酸2 —羥基乙酯、丙烯酸2一羥基丙 酯、曱基丙烯酸2—羥基丙酯等。含羧基之不飽和化合物之 例，可舉出丙烯酸、曱基丙烯酸等。 上述具有可進行加成反應之官能基與碳一碳雙鍵之化 合物（a2)之官能基，於共聚物（al)之官能基為羧基或環狀酸 酐基之情形時，可舉出羥基、環氧基、異氰酸酯基等。於（a2) 之s能基為羥基之情形時，可舉出環狀酸酐基、異氰酸酯 基等。於（a2)之官能基為胺基之情形時，可舉出異氰酸酯基 等。化合物（a2)之具體例，可列舉：丙烯酸、甲基丙烯酸、 肉桂酸、亞曱基丁二酸、反丁烯二酸、鄰苯二曱酸、丙烯 酸2—羥基烷基酯類、甲基丙烯酸2_羥基烷基酯類、乙二 醇單丙烯酸酯類、乙二醇單曱基丙烯酸酯類、N—羥曱基丙 22 201124503 烯醯胺、N~羥甲基甲基丙烯醢胺、烯丙醇、丙烯酸^^—烷 基胺基乙醋類、曱基丙烯酸N一烷基胺基乙酯類、丙稀醯胺 類、曱基丙烯醯胺類、順丁烯二酸酐、亞曱基丁二酸酐、 反丁稀一酸肝、鄰苯二甲酸酐、丙稀酸縮水甘油酯、甲基 丙烯酸縮水甘油酯、烯丙基縮水甘油醚、聚異氰酸酯化合 物之異氰酸酯基之一部分由具有羥基或羧基及光聚合性碳 —碳雙鍵之單體加以聚胺曱酸酯化者等。 於上述丙烯酸系共聚物（“之合成中，以溶液聚合進行 共聚合時之有機溶劑，可使用酮系 '酯系、醇系、芳香族 系者其中較佳為甲革、乙酸乙酯、異丙醇、笨甲基溶纖 =、乙基溶纖劑、丙酮、甲基乙基酮等通常為丙烯酸系聚 $物之良溶劑且沸點為60〜12(rc之溶劑，聚合起始劑，通 常使用α，α’-偶氮雙異丁腈等偶氮雙系、、過氧化笨甲酿等 有機過氧化物系等之自由基產生劑。*匕時，視需要可併用 觸媒：聚合抑制劑，可藉由調節聚合溫度及聚合時間，然 錢行官能基之加成反應，而獲得所f分子量之丙稀酸系 共：物(a)。又’關於調節分子量’較佳為使用硫醇、四氣 炭系之/合劑。再者，該共聚合併不限定於溶液聚合，亦 可使用塊狀聚合、懸浮聚合等其他方法。 又，藉由使黏著劑中含有光聚合性化合物，且藉由對 =黏著劑層照射放射線、尤佳為紫外線，可使黏著力進一 刀下降。此種光聚合性化合物，例如廣泛使用如曰本特 日。60; 196956號公報及日本特開昭6〇_ 223 139號公報 所揭不之可藉由光照射而三維網狀化之分子内至少具有‘ 23 201124503 個以上之光聚合性碳—碳雙鍵的低分子量化合物。具體而 言’例如使用三羥曱基丙烷三丙烯酸酯、季戊四醇三丙烯 酸酯、季戊四醇四丙烯酸酯、二季戊四醇單羥基五丙烯酸Injection amount: 20 // L Column temperature: 40 ° C Further, in the present invention, a radiation hardening type adhesive can be used as an adhesive constituting the adhesive layer. Among them, the adhesive constituting the adhesive layer is preferably a base resin containing a polymer (hereinafter referred to as polymer (a)) as a main component, and the polymer contains a radiation-containing property to the main chain. An acrylic monomer having a carbon-carbon double bond as a constituent unit. In the present specification, the polymer (a) is also referred to as a reactive polymer. The polymer (a) may be produced by any means, and examples thereof include a copolymer composed of (mercapto)acrylic acid, a hydroxyl group-containing unsaturated compound, a carboxyl group-containing unsaturated compound, and the like (a). 1) a carbon chain as a main chain, which has an addition reaction of a functional group capable of undergoing an addition reaction to a functional group of the copolymer (al) and a carbon-carbon double bond, C ad 21 201124503 (a2) The β (the above) (meth) acrylate can be exemplified by a hexyl acrylate having a carbon number of 6 to 12, an n-octyl acrylate, an isooctyl acrylate, a 2-ethylhexyl acrylate, and an iodine. Base S, succinic acid vinegar, or a monomer having a carbon number of 5 or less, ie, amyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate or the like methacrylic acid . In this case, the higher the number of carbon atoms is used as the monomer, the lower the glass transition point, so that the desired glass transition point can be produced. Further, in addition to the glass transition point, a low molecular compound having a carbon-carbon double bond such as vinyl acetate, styrene or acrylonitrile may be blended in a range of 5% by mass or less in order to be compatible with each other. Further, examples of the hydroxyl group-containing unsaturated compound include 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, and 2-hydroxypropyl methacrylate. Examples of the carboxyl group-containing unsaturated compound include acrylic acid, mercaptoacrylic acid and the like. The functional group of the compound (a2) having a functional group capable of undergoing an addition reaction and a carbon-carbon double bond; when the functional group of the copolymer (al) is a carboxyl group or a cyclic acid anhydride group, a hydroxyl group is exemplified. An epoxy group, an isocyanate group or the like. When the s energy group of (a2) is a hydroxyl group, a cyclic acid anhydride group or an isocyanate group may, for example, be mentioned. When the functional group of (a2) is an amine group, an isocyanate group or the like can be given. Specific examples of the compound (a2) include acrylic acid, methacrylic acid, cinnamic acid, decylene succinic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylate, and methyl group. 2-Hydroxyalkyl acrylate, ethylene glycol monoacrylate, ethylene glycol monodecyl acrylate, N-hydroxymethyl propyl group 22 201124503 olefinic amine, N-hydroxymethyl methacrylamide, Allyl alcohol, acrylic acid alkylamine acetoacetate, N-alkylaminoethyl methacrylate, acrylamide, mercapto acrylamide, maleic anhydride, alum a part of an isocyanate group of butyl succinic anhydride, anti-butyric acid liver, phthalic anhydride, glycidyl acrylate, glycidyl methacrylate, allyl glycidyl ether, polyisocyanate compound Or a monomer having a carboxyl group and a photopolymerizable carbon-carbon double bond, or the like, a polyamine oxime ester. In the above-mentioned acrylic copolymer ("the organic solvent in the case of copolymerization by solution polymerization in the synthesis, a ketone type ester type, an alcohol type, or an aromatic type can be used, and it is preferable that it is a leather, ethyl acetate, and a different. Propanol, sulphonic methyl fluorofibril =, ethyl cellosolve, acetone, methyl ethyl ketone, etc., usually a good solvent for acrylic acid and a boiling point of 60 to 12 (solvent of rc, polymerization initiator, Usually, a radical generator such as an azo double system such as α,α'-azobisisobutyronitrile or an organic peroxide such as a oxidized benzoic acid is used. When 匕, a catalyst can be used as needed: polymerization The inhibitor can be obtained by adjusting the polymerization temperature and the polymerization time, and then adding the functional group of the acrylic acid to obtain the acrylic acid group of the f molecular weight (a). Further, the copolymerization is not limited to solution polymerization, and other methods such as bulk polymerization or suspension polymerization may be used. Further, by including a photopolymerizable compound in the adhesive, And by irradiating radiation to the adhesive layer, especially ultraviolet light, Such a photopolymerizable compound can be used, for example, by the use of light irradiation, such as 曰 特 日 。 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 a three-dimensional networked molecule having at least '23 201124503 or more photopolymerizable carbon-carbon double bonds of a low molecular weight compound. Specifically, for example, trishydroxypropyl propane triacrylate, pentaerythritol triacrylate, pentaerythritol IV Acrylate, dipentaerythritol monohydroxypentaacrylic acid

Sa 一季戊四醇六丙烯酸酯或I，4 — 丁二醇二丙烯酸酯、1，6 —己二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、市售之寡酯 丙烯酸酯等。 並且於黏著劑中，藉由摻合光起始劑，可減少藉由光 照射之聚合硬化時間及光照射量。此種光起始劑，具體可 舉出：安息香、安息香甲醚、安息香乙醚、安息香異丙醚' 本偶醯二笨基硫醚、一硫化四甲基秋蘭姆、偶氮雙異丁腈、 :苯偶醯、一乙醯、卢—氣蒽醌等。光起始劑通常相對於 光聚合性化合物10〇質量份而使用0.1〜10質量份之量。藉 由對以此方式形成之光交聯型黏著劑層照射光、較佳為紫 外線，則初始之接著力大幅降低，並且可容易地自 寸 體上剝離該黏著帶。 於圖1所不之本發明之半導體晶圓表面保護用黏著帶 2〇之黏著劑層2上’可設置未圖示之剝離襯墊。 *剝離襯塾，可使用經石夕脫模處理之聚對狀酸乙二酉旨膜 等又視需要亦使用未經石夕脫模處理之聚丙稀冑。、 ▲本發明之半導體晶圓表面保護用黏著帶’可將貼合有 忒帶之8央吋直徑附有聚醯亞胺膜之半導體晶圓的下 (1)所表示之勉曲橋正率C設δ ； 卞l 〇又马75°/。以下。更佳為可將 矯正率C設為50%以下。 题曲 C=(A/B)xl〇〇 斗wi、 24 201124503 式（1)中’ A、B、c表示如下。 A:表面形成有厚度6/zm之聚醯亞胺膜之晶圓整體之 厚度為725 μηι，於8英对直徑之⑪半導體晶圓之聚酿亞胺 膜表面貼σ表面保護用黏著冑，貼合有將該半導體晶圓背 面研削至5” m厚後之該黏著帶的該8英。寸直徑晶圓之順 向輕曲量（mm) B:表面形成有厚度6/zm之聚醯亞胺膜之晶圓整體之 厚度為725 #m，於8英吋直徑之矽半導體晶圓之聚醯亞胺 獏表面貼合表面保護用黏著帶，將該半導體晶圓背面研削 至50 &quot; m厚’剝離該黏著帶後之該8英吋直徑晶圓之順向 輕曲量（mm) C :翹曲矯正率（〇/〇) 於上述式（1)中，聚醯亞胺膜係指如下所述者：使用非 感光性聚醯亞胺PIX—遍（商品名，日立化成杜邦微系統 (股）公司製造）’利用旋轉塗佈機以一面進行邊緣清洗—面 使乾燥後之膜厚成為6 &quot; m之方式對8英对直徑石夕半導體晶 圓進行塗佈’然:後於鳩t下進行3G分鐘預烤於35〇 = 下進行1小時正式烘烤，形成厚度6&quot;m之聚醯亞胺膜。 本發明之半導體晶圓表面保護黏著帶，即使於將附有 以聚醯亞胺為代表之絕緣膜的半導體晶圓研削至薄膜時， 藉由中間樹脂層之應力緩和效果’不僅可獲得帶貼合時所 施加之張力之緩和效果及基材樹脂膜層之翹曲矯正效果， 並且該基材樹脂膜層、中間樹脂層及黏著劑層合併而成之 層於縱方向及橫方向均勻施加研削時之應力，因此在無需 25 201124503 設定特殊之貼合條件下，可發揮超過聚醯亞胺絕緣膜之殘 留應力之翹曲矯正率，可降低研削後之半導體晶圓之翹曲。 又，形成於半導體晶圓之表面的聚醯亞胺等之絕緣膜 多為藉由加熱等進行交聯。目此’有絕緣膜中存在殘留應 力之情形。於此情形時，即使將本發明之半導體晶圓表面 保護黏著帶貼合於晶圓表面並研削，亦可發揮超過絕緣膜 之殘留應力之翹曲矯正率’並且可降低研削後之半導體晶 圓之勉曲。 [實施例1] 以下，基於貫施例對本發明進行更詳細說明，但本發 明並不限定於該等實施例。 &lt;實施例1 &gt; 相對於分別具有含放射線硬化性碳—碳雙鍵之基、含 羥基及羧基之基的重量平均分子量80萬之丙烯酸共聚物 1〇〇質量份’摻合加合物系異氰酸酯系交聯劑c〇r〇nate L(商 品名，日本聚胺酯公司製造）1質量份、光聚合起始劑 IrgacUre184(商品名，CibaJapan公司製造）3質量份，以乙 酸乙醋調整漠度而獲得黏著劑組成物。 又，相對於以曱基丙烯酸正丁酯作為構成成分之主成 刀’且具有經基及叛基作為其他構成成分之單體的丙烯酸 共聚物（酸值為10，羥值為2)100質量份，掺合加合物系異 氰酸酯交聯劑Coronate L(商品名，曰本聚胺醋公司製造）2 質量份及環氧系交聯劑TETRAD —C(商品名，三菱氣體化 學公司製造）2質量份’以乙酸乙酯調整濃度而獲得中間樹 26 201124503 脂層組成物。 於厚度38y m之聚對酞酸乙二酯基材樹脂膜（ρΕτ)之單 面上塗佈上述中間樹脂層組成物之後，使其乾燥，以積層 乾燥膜厚42 μ m之中間樹脂層。此時，中間樹脂層之交聯 後之玻璃轉移溫度為〇°C。該玻璃轉移溫度係藉由示差掃描 熱卡計（DSC)測得之值。 並且於厚度25// m之PET隔離膜上塗佈上述黏著劑組 成物’使其乾燥。然後，使該黏著劑組成物層與形成於上 述基材樹脂膜上之中間樹脂層貼合，製作具有乾燥膜厚2 〇 μ m之黏著劑層之半導體晶圓表面保護用黏著帶。 再者’上述丙稀酸系共聚物之重量平均分子量係藉由 下述條件之GPC(凝膠滲透層析法）而測得。 GPC裝置：HLC-- 8120GPC(商品名，Tosoh公司製造） 管柱：TSK gel Super HM— H/H4000 /H3000 / H2〇〇〇(商品名，Tosoh公司製造） 流量：0.6mL/min 濃度：0.3質量％Sa-pentaerythritol hexaacrylate or I,4-butanediol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylate, and the like. Further, in the adhesive, the polymerization hardening time by light irradiation and the amount of light irradiation can be reduced by blending the photoinitiator. Specific examples of such a photoinitiator include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, bis-diphenyl thioether, tetramethyl thiuram monosulfide, azobisisobutyronitrile , : Benzene oxime, one acetonide, Lu-gas sputum, etc. The photoinitiator is used in an amount of usually 0.1 to 10 parts by mass based on 10 parts by mass of the photopolymerizable compound. By irradiating light, preferably ultraviolet rays, to the photocrosslinking type adhesive layer formed in this manner, the initial adhesion force is largely lowered, and the adhesive tape can be easily peeled off from the body. In the adhesive layer 2 for the surface protection of semiconductor wafers of the present invention which is not shown in Fig. 1, a release liner (not shown) may be provided. * For the peeling of the lining, a poly-p-acid yttrium film which has been subjected to the release treatment of the diarrhea, and the like, and a polypropylene sulphide which has not been subjected to the demolding treatment, may be used as needed. ▲The adhesive tape for surface protection of semiconductor wafers of the present invention can be used to laminate a symmetrical tape with a symmetrical tape. The positive rate of the meandering bridge represented by the lower (1) of the semiconductor wafer with the polyimide film is attached. C is set to δ; 卞l 〇 and 75°/. the following. More preferably, the correction rate C can be set to 50% or less. The title C=(A/B)xl〇〇 bucket wi, 24 201124503 In the formula (1), 'A, B, c are as follows. A: The thickness of the entire wafer formed with a polyimide film having a thickness of 6/zm is 725 μηι, and the surface of the polyimide film of the 11-inch diameter semiconductor wafer is adhered to the surface of the polyimide film. The forward light curvature (mm) of the 8 inch diameter wafer of the adhesive tape after the back surface of the semiconductor wafer is ground to a thickness of 5" m is bonded to the surface. The surface is formed with a thickness of 6/zm. The thickness of the imide film wafer is 725 #m, and the surface of the polyimide wafer is bonded to the surface of the 8 inch diameter semiconductor wafer. The surface of the semiconductor wafer is ground to 50 &quot; m thick' the amount of light curvature (mm) of the 8 inch diameter wafer after peeling off the adhesive tape C: warpage correction rate (〇/〇) In the above formula (1), the polyimide film system It is as follows: Non-photosensitive polyimine PIX--(trade name, manufactured by Hitachi Chemical Co., Ltd.) is used to perform edge cleaning on one side by a spin coater. Thickness becomes 6 &quot; m way to coat 8 inches of diameter Shixi semiconductor wafers. 'Ran: 3G minutes before 鸠t Formally bake at 35 〇 = 1 hour to form a polyimide film with a thickness of 6 &quot; m. The semiconductor wafer surface protection adhesive tape of the present invention, even if an insulating film represented by polyimine is attached When the semiconductor wafer is ground to a film, the stress relaxation effect of the intermediate resin layer' can not only obtain the relaxation effect of the tension applied when the film is bonded, but also the warpage correction effect of the base resin film layer, and the substrate resin The layer formed by the combination of the film layer, the intermediate resin layer and the adhesive layer uniformly applies the stress during the grinding in the longitudinal direction and the transverse direction. Therefore, it is possible to exhibit an excess of the polyimide film without the need to set a special bonding condition of 25 201124503. The warpage correction rate of the residual stress can reduce the warpage of the semiconductor wafer after the grinding. Further, the insulating film of the polyimide or the like formed on the surface of the semiconductor wafer is often crosslinked by heating or the like. There is a case where residual stress exists in the insulating film. In this case, even if the semiconductor wafer surface protective adhesive tape of the present invention is attached to the wafer surface and ground, it can be used to exceed the insulating film. The warpage correction rate of the residual stress ′ can reduce the distortion of the semiconductor wafer after grinding. [Example 1] Hereinafter, the present invention will be described in more detail based on the examples, but the present invention is not limited to the implementation. &lt;Example 1&gt; An acrylic copolymer having a weight average molecular weight of 800,000 and a weight-containing molecular weight of 800,000, respectively, having a radical-containing carbon-carbon double bond-containing group, a hydroxyl group-containing and a carboxyl group-containing group 1 part by mass of the isocyanate-based crosslinking agent c〇r〇nate L (trade name, manufactured by Japan Polyurethane Co., Ltd.), and 3 parts by mass of a photopolymerization initiator IrgacUre 184 (trade name, manufactured by Ciba Japan Co., Ltd.), adjusted with ethyl acetate Adhesive composition is obtained by indifference. Further, an acrylic copolymer (acid value of 10, hydroxyl value of 2) 100 mass with respect to a monomer which is a main constituent of a butyl acrylate-based butyl acrylate as a constituent component and having a radical and a thiol group as other constituent components. Part, blended adduct isocyanate cross-linking agent Coronate L (trade name, manufactured by 曰本polyamine vinegar company) 2 parts by mass and epoxy-based cross-linking agent TETRAD-C (trade name, manufactured by Mitsubishi Gas Chemical Co., Ltd.) 2 The mass fraction was adjusted to the concentration of ethyl acetate to obtain a middle layer 26 201124503 lipid layer composition. The intermediate resin layer composition was applied to one surface of a polyethylene terephthalate base resin film (ρΕτ) having a thickness of 38 μm, and then dried to laminate an intermediate resin layer having a film thickness of 42 μm. At this time, the glass transition temperature after crosslinking of the intermediate resin layer was 〇 ° C. The glass transition temperature is a value measured by a differential scanning calorimeter (DSC). Further, the above adhesive composition was applied to a PET separator having a thickness of 25 / / m to be dried. Then, the adhesive composition layer was bonded to the intermediate resin layer formed on the base resin film to form an adhesive tape for protecting the semiconductor wafer surface having an adhesive layer having a dry film thickness of 2 μm. Further, the weight average molecular weight of the above-mentioned acrylic acid copolymer was measured by GPC (gel permeation chromatography) under the following conditions. GPC device: HLC-- 8120GPC (trade name, manufactured by Tosoh) Pipe column: TSK gel Super HM—H/H4000 /H3000 / H2〇〇〇 (trade name, manufactured by Tosoh) Flow rate: 0.6mL/min Concentration: 0.3 quality%

注入量：20 μ L 管柱溫度：40°C 對於以下實施例2〜1 1及比較例1〜6中所使用之丙烯 酸系共聚物，亦同樣地測量重量平均分子量，將其結果示 於表1〜3。又，以下實施例2〜11及比較例1〜6中，中間 樹脂層之玻璃轉移溫度’亦與實施例1同樣地以DSC測得。 &lt;實施例2 &gt; 27 201124503 相對於分別具有含放射線硬化性碳〜碳雙鍵之基、含 羥基及，基之基的重量平均分子量8〇萬之丙烯酸共聚物 100質量伤’摻合加合物系異氣酸西旨交聯劑L(商 品名，日本聚胺酯公司製造）1質量份 '光聚合起始劑Injection amount: 20 μL Column temperature: 40° C. The weight average molecular weights of the acrylic copolymers used in the following Examples 2 to 1 1 and Comparative Examples 1 to 6 were also measured in the same manner, and the results are shown in the table. 1 to 3. Further, in the following Examples 2 to 11 and Comparative Examples 1 to 6, the glass transition temperature ' of the intermediate resin layer was also measured by DSC in the same manner as in Example 1. &lt;Example 2 &gt; 27 201124503 An acrylic copolymer 100 mass-injured with a weight average molecular weight of 80,000, respectively, having a group containing a radiation-curable carbon-carbon double bond, a hydroxyl group-containing group, and a base group The compound is an isophthalic acid-based crosslinking agent L (trade name, manufactured by Japan Polyurethane Co., Ltd.) 1 part by mass of 'photopolymerization initiator

Irgacure 184(商品名，Ciba Japan公司製造）3質量份，以乙 酸乙酯調整濃度而獲得黏著劑組成物。 又，相對於以甲基丙烯酸正丁酯作為構成成分之主成 刀且具有羥基及羧基作為其他構成成分之單體的丙烯酸 共聚物（酸值為11 ’羥值為3)100質量份，摻合加合物系異 氰酸酯交聯劑Coronate L(商品名，日本聚胺酯公司製造口 質量份及環氧系交聯劑TETRAD— c(商品名，三菱氣體化 學公司製造）2質量份，以乙酸乙酯調整濃度而獲得中間樹 脂層組成物。 於厚度38ym之聚對g太酸乙二酯基材膜（pet)之單面上 塗佈上述中間樹脂層組成物後，使其乾燥，以積層乾燥膜 厚42 v m之中間樹脂層。此時，中間樹脂層之交聯後之玻 璃轉移溫度為一 15°C。 並且於厚度25 之PET隔離膜上塗佈黏著劑組成 物’使其乾燥，藉由貼合於設置有中間樹脂層之帶上而積 層，以積層膜厚20 β m厚之黏著劑層，製作半導體晶圓表 面保護用黏著帶。 &lt;實施例3 &gt; 相對於分別具有含放射線硬化性碳一碳雙鍵之基、含 羥基及羧基之基的重量平均分子量80萬之丙烯酸共聚物 28 201124503 100質量份，摻合加合物系異氰酸酯交聯劑c〇r〇nate L(商 品名’曰本聚胺酯公司製造）丨質量份、光聚合起始劑3 parts by mass of Irgacure 184 (trade name, manufactured by Ciba Japan Co., Ltd.) was adjusted to a concentration of ethyl acetate to obtain an adhesive composition. Further, an acrylic copolymer (acid value: 11 'hydroxyl value of 3) of 100 parts by mass of a monomer having a main component of butyl methacrylate as a constituent component and having a hydroxyl group and a carboxyl group as other constituent components is blended. The adduct is an isocyanate cross-linking agent Coronate L (trade name, manufactured by Japan Polyurethane Co., Ltd., and the epoxy-based crosslinking agent TETRAD-c (trade name, manufactured by Mitsubishi Gas Chemical Co., Ltd.), 2 parts by mass, with ethyl acetate The intermediate resin layer composition was obtained by adjusting the concentration. The intermediate resin layer composition was applied to one surface of a polyethylene terephthalate base film (pet) having a thickness of 38 μm, and then dried to form a dried film. An intermediate resin layer having a thickness of 42 vm. At this time, the glass transition temperature of the intermediate resin layer after crosslinking is 15 ° C. And the adhesive composition is coated on the PET separator having a thickness of 25 to be dried. The adhesive layer having a thickness of 20 μm is laminated on the tape provided with the intermediate resin layer to form an adhesive tape for protecting the surface of the semiconductor wafer. [Example 3 &gt; Sclerosing Acrylic acid copolymer having a weight average molecular weight of 800,000, a base of a carbon double bond, a hydroxyl group and a carboxyl group, and the like. 201124503 100 parts by mass, a blended adduct isocyanate crosslinker c〇r〇nate L (trade name '曰Manufactured by the polyurethane company) 丨 by mass, photopolymerization initiator

Irgacure 1 84(商品名，ciba Japan公司製造）3質量份，以乙 酸乙醋調整濃度而獲得黏著劑組成物。 又’相對於以甲基丙烯酸正丁酯作為構成成分之一， 且具有羥基之丙烯酸共聚物（羥值為35) 1〇〇質量份，摻合聚 異氰酸酯交聯劑TKA — 100(商品名，旭化成化學公司製 造）12質量份，以乙酸乙酯調整濃度而獲得中間樹脂層組成 物。 於厚度25/zm之聚萘二甲酸乙二酯基材膜（pen)之單 面.上塗佈上述中間樹脂層組成物後，使其乾燥，以積層乾 燥膜厚50 &quot; m之中間樹脂層。此時’中間樹脂層之交聯後 之玻璃轉移溫度為30°C。 並且於厚度25#m之PET隔離膜上塗佈黏著劑組成 物’使其乾燥’藉由貼合於設置有中間樹脂層之帶上而積 層，以積層膜厚3 0 μ m厚之黏著劑層’製作半導體晶圓表 面保護用點著帶。 &lt;實施例4 &gt; 相對於重量平均分子量100萬之丙烯酸共聚物丨〇〇質 置份’彳參合異氰酸S旨系交聯劑Coronate L(商品名，日本聚 胺酯公司製造）4質量份，以乙酸乙酯調整濃度而製作黏著 劑組成物。 又’相對於以曱基丙烯酸正丁酯作為構成成分之主成 分，且具有羥基及羧基之丙烯酸共聚物（酸值為11，羥值為 29 201124503 4)100質量份’摻合加合物系異氰酸酯交聯劑c〇r〇nate L(商 品名’日本聚胺酯公司製造）1質量份及環氧系交聯劑 TETRAD — c(商品名’三菱氣體化學公司製造）丨份，以乙酸 乙醋調整濃度而獲得中間樹脂層組成物。 於厚度38 μ m之聚對酞酸乙二酯基材膜（pet)之單面上 塗佈上述中間樹脂層組成物後，使其乾燥，以積層乾燥膜 厚62 // m之中間樹脂層。此時，中間樹脂層之交聯後之玻 璃轉移溫度為一lOt。 並且於厚度25&quot;m之PET隔離膜上塗佈黏著劑組成 物’使其乾燥’藉由貼合於設置有中間樹脂層之帶上而積 層’以積層膜厚30/im厚之黏著劑層，製作半導體晶圓表 面保護用黏著帶。 &lt;實施例5 &gt; 相對於重量平均分子量120萬之丙烯酸共聚物100質 量份’摻合異氰酸酯系交聯劑Coronate L(商品名，曰本聚 胺酯公司製造）2質量份及環氧系交聯劑TETRAD — C(商品 名’三菱氣體化學公司製造）4質量份，以乙酸乙酯調整濃 度而製作黏著劑組成物。 又，相對於以甲基丙烯酸正丁酯作為構成成分之主成 分，且具有羥基與羧基之丙烯酸共聚物（酸值為11，羥值為 3) 1 〇〇質量份，摻合加合物系異氰酸酯交聯劑Coronate L(商 品名，日本聚胺酯公司製造）2質量份及環氧系交聯劑 TETRAD — C(商品名，三菱氣體化學公司製造）2質量份’以 乙酸乙酯調整濃度而獲得中間樹脂層組成物。 30 201124503 於厚度38#m之聚對酞酸乙二酯基材膜（PET)之單面上 塗佈上述中間樹脂層組成物後’使其乾燥，以積層乾燥膜 厚42 # m之中間樹脂層。此時，中間樹脂層之交聯後之玻 璃轉移溫度為〇。(：。 並且於厚度25/zm之PET隔離膜上塗佈黏著劑組成 物’使其乾燥，藉由貼合於設置有中間樹脂層之帶上而積 層’以積層膜厚20 // m厚之黏著劑層，製作半導體晶圓表 面保護用黏著帶。 &lt;實施例6 &gt; 相對於重量平均分子量80萬之丙烯賤共聚物1 〇〇質量 份’摻合異氰酸酯系交聯劑Coronate L(商品名，日本聚胺 醋公司製造）〇·5質量份，以乙酸乙酯調整濃度而製作黏著劑 組成物。 又’相對於以曱基丙烯酸正丁酯作為構成成分之主成 分’且具有經基與叛基之丙豨酸共聚物（酸值為12，經值為 5)1〇〇質量份，搀合加合物系異氰酸酯c〇r〇nate L(商品名， 曰本聚胺酯公司製造）2質量份及環氧系交聯劑tetrad — C(商品名’三菱氣體化學公司製造）4質量份，以乙酸乙醋 調整濃度而獲得中間樹脂層組成物。 於厚度50 /z m之聚對酞酸乙二酯基材膜（pET)之單面上 塗佈上述中間樹脂層組成物後，使其乾燥，以積層乾燥膜 厚50 # m之中間樹脂層。此時，中間樹脂層之交聯後之玻 璃轉移溫度為15。(：。 並且於厚度25/z m之PET隔離膜上塗佈黏著劑組成 31 201124503 物，使其乾燥，藉由貼合於設置有中間樹脂号之帶上而積 層’以積層膜厚30//m厚之黏著劑層，製作半導體晶圓表 面保護用黏著帶。 &lt;實施例7 &gt; 相對於作為丙烯酸2 —乙基己酯、丙烯酸甲酯、丙烯酸 2 —羥基乙酯之共聚物的分子量70萬之丙烯酸基礎樹脂1〇〇 質量份，摻合異氰酸酯系交聯劑Coronate L(商品名，日本 聚胺酯公司製造）4質量份、作為募聚物之具有光聚合性碳 一碳雙鍵之四羥甲基甲烷四丙烯酸酯1〇〇份、光聚合起始 劑Irgacure 184(商品名，Ciba Japan公司製造）1質量份，以 乙酸乙酯調整濃度而製作黏著劑組成物。 又’相對於以甲基丙烯酸正丁酯作為構成成分之主成 分’且具有羥基及羧基之丙烯酸共聚物（酸值為11，羥值為 2)100質量份，摻合加合物系異氰酸酯Coronate L(商品名， 曰本聚胺酯公司製造）2質量份及環氧系交聯劑TETRAD — C(商品名，三菱氣體化學公司製造）2質量份，以乙酸乙酯 調整濃度而獲得中間樹脂層組成物。 於厚度38/im之聚對酞酸乙二酯基材膜（PET)之單面上 塗佈上述中間樹脂層組成物後，使其乾燥，以積層乾燥膜 厚42 y m之中間樹脂層。此時，中間樹脂層之交聯後之玻 璃轉移溫度為〇 °C。 並且於厚度25//m之PET隔離膜上塗佈黏著劑組成 物，使其乾燥，藉由貼合於設置有中間樹脂層之帶上而積 層，以積層膜厚20 &quot; m厚之黏著劑層，製作半導體晶圓表 32 201124503 面保護用黏著帶。 &lt;實施例8 &gt; 相對於重量平均分子量80萬之丙烯酸共聚物100質量 伤’播合異氰酸醋系交聯劑Coronate L(商品名，曰本聚胺 醋公司製造）1.5質量份，以乙酸乙酯調整濃度而製作黏著劑 組成物。 又’相對於具有羥基與羧基之聚胺酯丙稀酸酯（酸值為 2 ’經值為35)100質量份，摻合異氰酸酯交聯劑c〇r〇nate L(商品名’日本聚胺酯公司製造）3質量份及環氧系交聯劑 TETRAD— C(商品名’三菱氣體化學公司製造）4質量份，以 乙酸乙酯調整濃度而獲得中間樹脂層組成物。 於厚度25/zm之聚萘二曱酸乙二酯基材膜（pen)之單 面上塗佈上述中間樹脂層組成物後，使其乾燥，以積層乾 燥膜厚50 v m之中間樹脂層。此時，中間樹脂層之交聯後 之玻璃轉移溫度為30t：。 並且於厚度25//m之PET隔離膜上塗佈黏著劑組成 物’使其乾燥’藉由貼合於設置有中間樹脂層之帶上而積 層，以積層膜厚3 〇 # in厚之黏著劑層，製作半導體晶圓表 面保護用黏著帶。 &lt;實施例9 &gt; 相對於分別具有含放射線硬化性碳—碳雙鍵之基、含 羥基及羧基之基的重量平均分子量8〇萬之丙烯酸共聚物 i〇〇質里份，摻合加合物系異氰酸酯交聯劑L(商 m名，日本聚胺酯公司製造）丨質量份、光聚合起始劑 33 201124503 1犷吕&amp;(：11^184(商品名’（1^3】3卩311公司製造）3質量份，以乙 酸乙酯調整濃度而獲得黏著劑組成物。 又’相對於以甲基丙烯酸正丁酯作為構成成分之一， 且具有羥基及羧基之丙烯酸共聚物（酸值為10，羥值為 2)100質量份’摻合加合物系異氰酸酯Coronate L(商品名， 曰本聚胺酯公司製造）2質量份及環氧系交聯劑TETRAD -C(商品名，三菱氣體化學公司製造）2質量份，以乙酸乙酯 調整濃度而獲得中間樹脂層組成物。 於厚度75以m之聚對敗酸乙二酯基材膜（pet)之單面上 塗佈上述中間樹脂層組成物後，使其乾燥，以積層乾燥膜 厚2 5 /z m之中間樹脂層。此時，中間樹脂層之交聯後之玻 璃轉移溫度為0°C。 並且於厚度25#m之PET隔離膜上塗佈黏著劑組成 物，使其乾燥’藉由貼合於設置有中間樹脂層之帶上而積 層，以積層膜厚30ym厚之黏著劑層，製作半導體晶圓表 面保護用黏著帶。 &lt;實施例1 0 &gt; 相對於分別具有含放射線硬化性碳—碳雙鍵之基、含 經基及羧基之基的重量平均分子量80萬之丙烯酸共聚物 1 〇〇質里伤’播合加合物系異氰酸醋交聯劑Coronate L(商 品名，日本聚胺酯公司製造）1質量份、光聚合起始劑 Irgacurel84(商品名，CibaJapan公司製造）3質量份，以乙 西文乙s周整濃度而獲得黏著劑組成物。 又’相對於以曱基丙稀酸正丁酯作為構成成分之一， 34 201124503 且具有羥基及羧基之丙烯酸共聚物（酸值為10，羥值為 2) 1 〇〇質量份，換合加合物系異氰酸酿Coronate L(商品名， 曰本聚胺酯公司製造）2質量份及環氧系交聯劑TETRAD — C(商品名，三菱氣體化學公司製造）2質量份，以乙酸乙酯 s周整濃度而獲得中間樹脂層組成物。 於厚度40/zm之聚酿亞胺基材膜之單面上塗佈上述中 間樹脂層組成物後，使其乾燥’以積層乾燥膜厚3〇 # m之 中間樹脂層。此時，中間樹脂層之交聯後之玻璃轉移溫度 為 _ 5 〇C。 並且於厚度25&quot;m之PET隔離膜上塗佈黏著劑組成 物，使其乾燥，藉由貼合於設置有中間樹脂層之帶上而積 .層’以積層膜厚30//m厚之黏著劑層，製作半導體晶圓表 面保護用黏著帶。 &lt;實施例11 &gt; 相對於分別具有含放射線硬化性碳一碳雙鍵之基、含 羥基及羧基之基的重量平均分子量8〇萬之丙烯酸共聚物 1〇〇質量份’掺合加合物系異氰酸酯系交聯劑c〇r〇nate L(商 品名，日本聚胺酯公司製造）丨質量份、光聚合起始劑Irgacure 1 84 (trade name, manufactured by Ciba Japan Co., Ltd.) was added in an amount of 3 parts by mass, and the concentration of the acetic acid was adjusted to obtain an adhesive composition. Further, a polyisocyanate crosslinking agent TKA-100 is blended with respect to an acrylic copolymer having a hydroxyl group as a constituent component and having a hydroxyl group (hydroxyl value of 35) of 1 part by mass. 12 parts by mass of Asahi Kasei Chemicals Co., Ltd., adjusted to a concentration of ethyl acetate to obtain an intermediate resin layer composition. Applying the intermediate resin layer composition on one side of a polyethylene naphthalate base film (pen) having a thickness of 25/zm, and drying the composition to dry the intermediate resin with a film thickness of 50 &quot; m Floor. At this time, the glass transition temperature after crosslinking of the intermediate resin layer was 30 °C. And applying an adhesive composition 'drying' on a PET separator having a thickness of 25#m by laminating on a belt provided with an intermediate resin layer to laminate an adhesive having a thickness of 30 μm. The layer 'made semiconductor wafer surface protection with a tape. &lt;Example 4 &gt; An acrylic copolymer having a weight average molecular weight of 1,000,000, a bismuth portion, and a portion of a cross-linking agent, Codonate L (trade name, manufactured by Japan Polyurethane Co., Ltd.), 4 parts by mass The adhesive composition was prepared by adjusting the concentration with ethyl acetate. Further, 'acrylic acid copolymer having a hydroxyl group and a carboxyl group as a main component of n-butyl decyl acrylate as a constituent component (acid value: 11, hydroxyl value: 29 201124503 4) 100 parts by mass of 'adducted adduct system Isocyanate cross-linking agent c〇r〇nate L (trade name 'made by Japan Polyurethane Co., Ltd.) 1 part by mass and epoxy crosslinking agent TETRAD — c (trade name 'Mitsubishi Gas Chemical Co., Ltd.) 丨 parts, adjusted with ethyl acetate The intermediate resin layer composition was obtained at the concentration. The intermediate resin layer composition is coated on one surface of a polyethylene terephthalate base film (pet) having a thickness of 38 μm, and then dried to laminate an intermediate resin layer having a film thickness of 62 // m. . At this time, the glass transition temperature after crosslinking of the intermediate resin layer was 1 lt. And coating the adhesive composition on the thickness of 25&quot;m of the PET separator to 'dry it' by laminating on the tape provided with the intermediate resin layer to laminate the adhesive layer with a thickness of 30/im thick. , to make adhesive tape for surface protection of semiconductor wafers. &lt;Example 5&gt; 2 parts by mass of an acrylic copolymer having a weight average molecular weight of 1.2 million and a part by mass of an isocyanate-based crosslinking agent Coronate L (trade name, manufactured by Sakamoto Polyurethane Co., Ltd.) and epoxy cross-linking For example, 4 parts by mass of TETRAD-C (trade name: manufactured by Mitsubishi Gas Chemical Co., Ltd.) was adjusted to a concentration of ethyl acetate to prepare an adhesive composition. Further, the adduct is adducted with respect to an acrylic copolymer having a hydroxyl group and a carboxyl group (acid value: 11 and a hydroxyl value of 3) as a main component of n-butyl methacrylate as a main component. 2 parts by mass of an isocyanate crosslinking agent Coronate L (trade name, manufactured by Japan Polyurethane Co., Ltd.) and an epoxy crosslinking agent TETRAD-C (trade name, manufactured by Mitsubishi Gas Chemical Co., Ltd.), 2 parts by mass, obtained by adjusting the concentration with ethyl acetate Intermediate resin layer composition. 30 201124503 After coating the above-mentioned intermediate resin layer composition on one side of a polyethylene terephthalate base film (PET) having a thickness of 38#m, it is dried to form an intermediate resin having a dry film thickness of 42 m. Floor. At this time, the glass transition temperature after crosslinking of the intermediate resin layer was 〇. (: and applying an adhesive composition on a PET separator having a thickness of 25/zm to dry it, and laminating by laminating on a belt provided with an intermediate resin layer to have a laminate film thickness of 20 // m thick The adhesive layer was used to form an adhesive tape for surface protection of a semiconductor wafer. <Example 6> An acryl oxime copolymer having a weight average molecular weight of 800,000 〇〇 by mass of a blended isocyanate-based crosslinking agent Coronate L ( Product name, manufactured by Japan Polyurethane Co., Ltd.) 5 parts by mass, adjusted to a concentration of ethyl acetate to prepare an adhesive composition, and 'relative to a main component of n-butyl decyl acrylate as a constituent component' A copolymer of a base and a thiol acid (acid number of 12, a value of 5) of 1 part by mass, a chelating adduct isocyanate c〇r〇nate L (trade name, manufactured by 曰本聚酯酯) 2 parts by mass and epoxy-based cross-linking agent tetrad-C (trade name: manufactured by Mitsubishi Gas Chemical Co., Ltd.), 4 parts by mass, adjusted to a concentration of ethyl acetate to obtain an intermediate resin layer composition. Polypyrene having a thickness of 50 /zm Coating on the single side of the acid ethylene glycol base film (pET) After the intermediate resin layer composition was dried, it was laminated to dry the intermediate resin layer having a film thickness of 50 # m. At this time, the glass transition temperature after crosslinking of the intermediate resin layer was 15. (:: and at a thickness of 25/ The PET film of zm is coated with an adhesive composition 31 201124503, which is dried and laminated by laminating an adhesive layer having a laminated film thickness of 30//m by laminating on a tape provided with an intermediate resin number. Adhesive tape for surface protection of semiconductor wafers. &lt;Example 7&gt; Acrylic base resin having a molecular weight of 700,000 relative to a copolymer of 2-ethylhexyl acrylate, methyl acrylate, and 2-hydroxyethyl acrylate 4 parts by mass of an isocyanate-based crosslinking agent Coronate L (trade name, manufactured by Japan Polyurethane Co., Ltd.), tetramethylol methane tetraacrylate having photopolymerizable carbon-carbon double bond as a polymerized component 1 part by mass of a photopolymerization initiator Irgacure 184 (trade name, manufactured by Ciba Japan Co., Ltd.), adjusted to a concentration of ethyl acetate to prepare an adhesive composition. Further, it is composed of n-butyl methacrylate. to make 100 parts by mass of an acrylic acid copolymer (having an acid value of 11 and a hydroxyl value of 2) having a main component 'and a hydroxyl group and a carboxyl group, and 2 parts by mass of a blended isocyanate Coronate L (trade name, manufactured by Sakamoto Polyurethane Co., Ltd.) 2 parts by mass of an epoxy-based crosslinking agent TETRAD-C (trade name, manufactured by Mitsubishi Gas Chemical Co., Ltd.), and adjusted to a concentration of ethyl acetate to obtain an intermediate resin layer composition. Polyethylene terephthalate having a thickness of 38/im The intermediate resin layer composition was applied to one surface of an ester base film (PET), and then dried to laminate an intermediate resin layer having a film thickness of 42 μm. At this time, the glass transition temperature after crosslinking of the intermediate resin layer was 〇 °C. And applying an adhesive composition on a PET separator having a thickness of 25/m, drying it, laminating by laminating on a belt provided with an intermediate resin layer, and laminating a film thickness of 20 &quot; Agent layer, made of semiconductor wafer table 32 201124503 surface protection adhesive tape. &lt;Example 8&gt; 1.5 parts by mass of the isocyanate vinegar-based crosslinking agent Coronate L (trade name, manufactured by Sakamoto Polyamine Co., Ltd.) with respect to 100% by mass of the acrylic copolymer having a weight average molecular weight of 800,000 The adhesive composition was prepared by adjusting the concentration with ethyl acetate. Further, it is blended with an isocyanate crosslinking agent c〇r〇nate L (trade name 'made by Japan Polyurethane Co., Ltd.') with respect to 100 parts by mass of a polyurethane acrylate having a hydroxyl group and a carboxyl group (acid value of 2' with a value of 35). 4 parts by mass and 4 parts by mass of an epoxy-based crosslinking agent TETRAD-C (trade name: manufactured by Mitsubishi Gas Chemical Co., Ltd.) were adjusted to a concentration of ethyl acetate to obtain an intermediate resin layer composition. The intermediate resin layer composition was applied onto one surface of a polyethylene naphthalate base material film (pen) having a thickness of 25/zm, and then dried to laminate an intermediate resin layer having a film thickness of 50 v. At this time, the glass transition temperature after crosslinking of the intermediate resin layer was 30 t:. And coating the adhesive composition 'drying' on the PET separator having a thickness of 25/m by laminating by laminating on the belt provided with the intermediate resin layer to laminate the film thickness of 3 〇# in thick The agent layer is used to form an adhesive tape for surface protection of a semiconductor wafer. &lt;Example 9&gt; An acrylic copolymer i 〇〇 里 里 相对 相对 相对 相对 相对 相对 相对 相对 相对 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸 丙烯酸Isocyanate crosslinker L (manufactured by Japan Polyurethane Co., Ltd.) 丨 mass part, photopolymerization initiator 33 201124503 1犷吕&amp;(:11^184(brand name'(1^3]3卩3 parts by mass of 311 company, adjusted to a concentration of ethyl acetate to obtain an adhesive composition. Further 'as opposed to an acrylic copolymer having n-butyl methacrylate as a constituent component and having a hydroxyl group and a carboxyl group (acid value) 10, a hydroxyl value of 2) 100 parts by mass of a blended adduct isocyanate Coronate L (trade name, manufactured by Sakamoto Polyurethane Co., Ltd.) 2 parts by mass and an epoxy crosslinking agent TETRAD-C (trade name, Mitsubishi Gas) 2 parts by mass of Chemical Co., Ltd., adjusted to a concentration of ethyl acetate to obtain an intermediate resin layer composition. The above intermediate resin was coated on one side of a poly(ethylene glycol) base film (pet) having a thickness of 75 m. After the layer composition, it is dried to laminate the dried film An intermediate resin layer having a thickness of 2 5 /zm. At this time, the glass transition temperature after crosslinking of the intermediate resin layer is 0 ° C. The adhesive composition is applied to the PET separator having a thickness of 25 #m to be dried. The adhesive tape for semiconductor wafer surface protection is produced by laminating a tape provided with an intermediate resin layer and laminating an adhesive layer having a thickness of 30 μm. <Example 1 0 &gt; Acrylic copolymer containing a radiopaque carbon-carbon double bond, a weight average molecular weight of 800,000, containing a radical and a carboxyl group, 1 enamel damage, a sowing adduct, an isocyanate crosslinker, Coronate L (trade name, manufactured by Japan Polyurethane Co., Ltd.) 1 part by mass, photopolymerization initiator Irgacurel 84 (trade name, manufactured by Ciba Japan Co., Ltd.) in an amount of 3 parts by mass, and an adhesive composition was obtained at a concentration of a week of ethyl sulphate. Compared with n-butyl decyl acrylate as one of the constituent components, 34 201124503 and having a hydroxyl group and a carboxyl group of an acrylic copolymer (acid value of 10, hydroxyl value of 2) 1 〇〇 by mass, a blended adduct Isocyanic acid Coronate L (trade name, 曰2 parts by mass of epoxy-based crosslinking agent TETRAD-C (trade name, manufactured by Mitsubishi Gas Chemical Co., Ltd.), 2 parts by mass, and an intermediate resin layer composition was obtained at a concentration of ethyl acetate s. The intermediate resin layer composition is coated on one surface of the /zm polyacrylamide base film, and then dried to form an intermediate resin layer having a thickness of 3 〇# m. The intermediate resin layer is at this time. The glass transition temperature after the joint is _ 5 〇 C. The adhesive composition is applied on the PET separator of thickness 25 &quot;m, dried, and laminated by being attached to the belt provided with the intermediate resin layer. The layer is formed by applying an adhesive layer having a thickness of 30/m thick to form an adhesive tape for protecting the surface of a semiconductor wafer. &lt;Example 11&gt; An acrylic copolymer having a weight average molecular weight of 80,000, which has a radical containing a carbon-carbon double bond, a hydroxyl group and a carboxyl group, respectively, 1 part by mass of the blending plus Isocyanate crosslinking agent c〇r〇nate L (trade name, manufactured by Japan Polyurethane Co., Ltd.) 丨 by mass, photopolymerization initiator

Irgacure 184(商品名，Ciba Japan公司製造質量份，以乙 酸乙酯調整濃度而獲得黏著劑組成物。 相對於重ϊ平均分子量4〇萬之具有羥基之丙烯酸共聚 物值為4，羥值為33)1〇〇質量份’摻合異氰酸酯系交聯 劑Coronate L(商品名，日本聚胺酯公司製造）〇 5質量份， 以乙酸乙酯調整濃度而製作中間樹脂層組成物。 35 201124503 於厚度38/z m之聚對酞酸乙二酯基材膜（pET)之單面上 塗佈上述中間樹脂層組成物後，使其乾燥，藉由數次重疊 而積層乾燥膜厚1 32 &quot; m之中間樹脂層。此時，中間樹脂層 之交聯後之玻璃轉移溫度為一 5 0 °C。 於厚度50以m之PET隔離膜上塗佈黏著劑組成物，使 其乾燥，藉由貼合於PET及EVA之雙層膜之單面上而積 層以積層膜厚10 β in厚之黏著劑層，製作半導體晶圓表 面保護用黏著帶。 &lt;比較例1 &gt; 相對於分別具有含放射線硬化性碳一碳雙鍵之基、含 羥基及羧基之基的重量平均分子量8〇萬之丙烯酸共聚物 100質量份’摻合加合物系異氰酸酯系交聯劑C〇ronate L(商 品名，日本聚胺酯公司製造）丨質量份、光聚合起始劑Irgacure 184 (trade name, manufactured by Ciba Japan Co., Ltd., and adjusted to a concentration of ethyl acetate to obtain an adhesive composition. The acrylic acid copolymer having a hydroxyl group having an average molecular weight of 40,000 has a hydroxyl value of 4 and a hydroxyl value of 33. 1 part by mass of a mixture of an isocyanate-based crosslinking agent Coronate L (trade name, manufactured by Japan Polyurethane Co., Ltd.), 5 parts by mass, and adjusted to a concentration of ethyl acetate to prepare an intermediate resin layer composition. 35 201124503 Applying the intermediate resin layer composition on one side of a polyethylene terephthalate base film (pET) having a thickness of 38/zm, drying it, and laminating the dried film thickness by several overlapping times 32 &quot; m intermediate resin layer. At this time, the glass transition temperature after crosslinking of the intermediate resin layer was 150 °C. Applying an adhesive composition to a PET separator having a thickness of 50 m, drying it, and laminating it on a single surface of a double film of PET and EVA to laminate an adhesive having a thickness of 10 β in a thick film. Layer, an adhesive tape for surface protection of semiconductor wafers. &lt;Comparative Example 1 &gt; 100 parts by mass of the acrylic copolymer having a weight average molecular weight of 80,000, respectively, having a group containing a radiation-curable carbon-carbon double bond, a hydroxyl group and a carboxyl group, and a blending adduct system Isocyanate crosslinking agent C〇ronate L (trade name, manufactured by Japan Polyurethane Co., Ltd.) 丨 by mass, photopolymerization initiator

Irgacure 184(商品名，Ciba Japan公司製造）3質量份，以乙 酸乙酯調整濃度而獲得黏著劑組成物。 又’相對於以曱基丙烯酸正丁酯作為構成成分之一， 且具有經基及羧基之丙烯酸共聚物（酸值為π，羥值為 2) 100質量份，摻合加合物系異氰酸酯Coronate L(商品名， 曰本聚胺酯公司製造）2質量份及環氧系交聯劑TETRAD — C(商品名，三菱氣體化學公司製造）2質量份，以乙酸乙酯 調整濃度而獲得中間樹脂層組成物。 於厚度40/zm之聚丙烯（pPe)基材膜之單面上塗佈上述 中間樹脂層組成物後，使其乾燥，以積層乾燥膜厚4〇 &quot; m 之中間樹脂層。此時，中間樹脂層之交聯後之玻璃轉移溫 36 201124503 度為o°c。 並且於厚度25#m之PET隔離膜上塗佈黏著劑組成 物，使其乾燥，藉由貼合於設置有中間樹脂層之帶上而積 層，以積層膜厚20 # m厚之黏著劑層，製作半導體晶圓表 面保護用黏著帶。 &lt;比較例2 &gt; 相對於重量平均分子量4〇萬之丙烯酸共聚物丨〇〇質量 份，摻合異氰酸酯系交聯劑c〇r〇nate L(商品名，日本聚胺 酉曰么司製造）1 ·〇質量份及環氧系交聯劑TETRAD — C(商品 名，三菱氣體化學公司製造）2.5質量份，以乙酸乙酯調整濃 度而製作黏著劑組成物。 於厚度25 # m之PET隔離膜上塗佈黏著劑組成物，使 其乾燥，藉由貼合於厚度165//m之乙烯—乙酸乙烯酯共聚 物（EVA)膜之單面上而積層，以積層膜厚4〇 # m厚之黏著劑 層’製作半導體晶圓表面保護用黏著帶。 &lt;比較例3 &gt; 相對於作為丙烯酸2 —乙基己酯、丙烯酸曱酯、丙烯酸 2 經基乙酯之共聚物的分子量7 0萬之丙稀酸系基礎樹脂 100質量份’摻合異氰酸酯系交聯劑Coronate L(商品名， 曰本聚胺酯公司製造）4質量份、作為寡聚物的具有光聚合 性碳—碳雙鍵之四羥曱基甲烧四丙烯酸酯1 00份、光聚合 起始劑Irgacure 184(商品名，Ciba Japan公司製造）1質量 份’以乙酸乙酯調整濃度而製作黏著劑組成物。 於厚度100//m之聚對酞酸乙二酯基材膜（PET)之單面 37 201124503 上塗佈上述黏著劑組成物後，使其乾燥，以積層使乾燥後 之厚度為1 5 e m之黏著劑層。並且於該黏著劑層上積層pet 之隔離膜，製作半導體晶圓表面保護用黏著帶。 &lt;比較例4 &gt; 相對於作為丙烯酸2 —乙基己酯、丙烯酸甲酯、丙烯酸 2 —經基乙酯之共聚物的分子量70萬之丙烯酸基礎樹脂1〇〇 質量份，摻合異氣酸酯交聯劑Coronate L(商品名，曰本聚 胺酯公司製造）4質量份、作為寡聚物的具有光聚合性碳— 碳雙鍵之四羥甲基甲烷四丙烯酸酯1 〇〇份、光聚合起始劑 Irgacure 1 84(商品名，Ciba Japan公司製造）1質量份，以乙 酸乙酯調整濃度而製作黏著劑組成物。 於厚度25 μ m之PET隔離膜上塗佈黏著劑組成物，使 其乾燥，藉由貼合於厚度30ym之高密度聚乙烯（HDPE)及 厚度70//m之乙稀一乙酸乙烯酯共聚物之雙層膜基材的乙 烯一乙酸乙烯酯共聚物之層上而積層，以積層膜厚30 厚之黏著劑層’製作半導體晶圓表面保護用黏著帶。 &lt;比較例5 &gt; 相對於分別具有含放射線硬化性碳—碳雙鍵之基、含 羥基及羧基之基的重量平均分子量80萬之丙烯酸共聚物 100質量份’推合加合物系異氣酸醋系交聯劑C〇r〇nate L(商 品名’日本聚胺酯公司製造）1質量份、光聚合起始劑 Irgacure 184(商品名，Ciba Japan公司製造）3質量份，以乙 酸乙酯調整濃度而獲得黏著劑組成物。 相對於分別具有含放射線硬化性碳一碳雙鍵之基、含 38 201124503 經基及羧基之基的重量平均分子量20萬之丙烯酸共聚物 (酉值為4’經值為33)100質量份，換合加合物系異氣酸商旨 系交聯劑Coronate L(商品名，日本聚胺酯公司製造）〇 5質 量份、光聚合起始劑】rgacure 184(商品名，Ciba Japan公司 製造）5質量份，以乙酸乙酯調整濃度而獲得黏著劑組成物。 於厚度5〇βηι之PET隔離膜上塗佈黏著劑組成物’使 其乾燥’藉由數次貼合於厚度20 之高密度聚乙烯（HDPE) 及厚度180//m之乙烯一乙酸乙烯酯共聚物之雙層膜基材的 乙烯一乙酸乙烯酯共聚物之層上而積層，以積層膜厚130 μ m厚之中間樹脂層。此時，中間樹脂層之交聯後之玻璃轉 移溫度為一5 0 °C。 於厚度50 /z m之PET隔離膜上塗佈黏著劑組成物，使 其乾燥’藉由貼合於積層有中間樹脂層之膜上而積層，以 積層膜厚5 μ m厚之黏著劑層，製作半導體晶圓表面保護用 黏著帶。 &lt;比較例6 &gt; 相對於分別具有含放射線硬化性碳一碳雙鍵之基、含 經基及綾基之基的重量平均分子量80萬之丙烯酸系共聚物 1〇〇質量份，摻合加合物系異氰酸酯系交聯劑Coronate L(商 品名’曰本聚胺酯公司製造）1質量份、光聚合起始劑3 parts by mass of Irgacure 184 (trade name, manufactured by Ciba Japan Co., Ltd.) was adjusted to a concentration of ethyl acetate to obtain an adhesive composition. Further, the adduct is an isocyanate Coronate with respect to 100 parts by mass of an acrylic copolymer having a trans group and a carboxyl group (acid value of π, a hydroxyl value of 2) as a constituent component of n-butyl decyl acrylate. 2 parts by mass of the epoxy-based crosslinking agent TETRAD-C (trade name, manufactured by Mitsubishi Gas Chemical Co., Ltd.) in an amount of 2 parts by mass, and adjusted to a concentration of ethyl acetate to obtain an intermediate resin layer composition. Things. The intermediate resin layer composition was applied to one surface of a polypropylene (pPe) substrate film having a thickness of 40/zm, and then dried to laminate an intermediate resin layer having a thickness of 4 Å &quot; m. At this time, the glass transition temperature after cross-linking of the intermediate resin layer is 36 201124503 degrees is o °c. And applying an adhesive composition on a PET separator having a thickness of 25 #m, drying it, and laminating it by laminating on a belt provided with an intermediate resin layer to laminate an adhesive layer having a thickness of 20 #m thick , to make adhesive tape for surface protection of semiconductor wafers. &lt;Comparative Example 2 &gt; An isocyanate-based crosslinking agent c〇r〇nate L was blended with respect to an acrylic copolymer having a weight average molecular weight of 4,000,000, and a product was produced by a Japanese polyamine. 1·〇 parts by mass and an epoxy-based crosslinking agent TETRAD-C (trade name, manufactured by Mitsubishi Gas Chemical Co., Ltd.), 2.5 parts by mass, and adjusted to a concentration of ethyl acetate to prepare an adhesive composition. The adhesive composition was applied onto a PET separator having a thickness of 25 m, dried, and laminated by laminating on one side of an ethylene-vinyl acetate copolymer (EVA) film having a thickness of 165/m. An adhesive tape for protecting a surface of a semiconductor wafer is formed by an adhesive layer having a thickness of 4 Å #m thick. &lt;Comparative Example 3 &gt; Admixture of isocyanate with respect to 100 parts by mass of an acrylic acid base resin having a molecular weight of 700,000, which is a copolymer of 2-ethylhexyl acrylate, decyl acrylate, and 2-ethyl ethyl acrylate 4 parts by mass of a cross-linking agent Coronate L (trade name, manufactured by Sakamoto Polyurethane Co., Ltd.), 100 parts of tetrahydrofurfuryl methane tetraacrylate having a photopolymerizable carbon-carbon double bond as an oligomer, photopolymerization Starting material Irgacure 184 (trade name, manufactured by Ciba Japan Co., Ltd.) 1 part by mass 'Adjusted concentration with ethyl acetate to prepare an adhesive composition. Applying the above adhesive composition on one side of a polyethylene terephthalate base film (PET) having a thickness of 100/m, and then drying it to laminate to a thickness of 1 5 em after drying. Adhesive layer. Further, a separator film of pet is laminated on the adhesive layer to form an adhesive tape for protecting the surface of the semiconductor wafer. &lt;Comparative Example 4 &gt; Incorporation of an inert gas with respect to 1 part by mass of an acrylic base resin having a molecular weight of 700,000 as a copolymer of 2-ethylhexyl acrylate, methyl acrylate, and 2-ethylidene ethyl acrylate 4 parts by mass of ester copolymer cross-linking agent Coronate L (trade name, manufactured by Sigma Polyurethane Co., Ltd.), tetramethylol methane tetraacrylate having photopolymerizable carbon-carbon double bond as oligomer, 1 part by weight, light 1 part by mass of a polymerization initiator Irgacure 1 84 (trade name, manufactured by Ciba Japan Co., Ltd.) was adjusted to a concentration of ethyl acetate to prepare an adhesive composition. The adhesive composition was coated on a PET separator having a thickness of 25 μm, and dried, and copolymerized by high-density polyethylene (HDPE) having a thickness of 30 μm and ethylene-vinyl acetate having a thickness of 70/m. The layer of the ethylene-vinyl acetate copolymer of the two-layer film substrate is laminated to form an adhesive tape for protecting the surface of the semiconductor wafer with a film thickness of 30 thick. &lt;Comparative Example 5 &gt; 100 parts by mass of the acrylic copolymer having a weight average molecular weight of 800,000 each having a group containing a radiation curable carbon-carbon double bond and a hydroxyl group and a carboxyl group, respectively 1 part by mass of a gas vinegar-based cross-linking agent C〇r〇nate L (trade name: manufactured by Japan Polyurethane Co., Ltd.), photopolymerization initiator Irgacure 184 (trade name, manufactured by Ciba Japan Co., Ltd.), 3 parts by mass, ethyl acetate The concentration was adjusted to obtain an adhesive composition. An acrylic copolymer having a weight average molecular weight of 200,000 (a 酉 value of 4' a value of 33) of 100 parts by mass, respectively, having a radical containing a radio-curable carbon-carbon double bond, a base containing 38 201124503 and a carboxyl group, The blending adduct is a homophobic acid-based cross-linking agent Coronate L (trade name, manufactured by Japan Polyurethane Co., Ltd.) 5 parts by mass, a photopolymerization initiator; rgacure 184 (trade name, manufactured by Ciba Japan Co., Ltd.) 5 mass The mixture was adjusted to a concentration of ethyl acetate to obtain an adhesive composition. Applying the adhesive composition 'drying' on a PET barrier film having a thickness of 5 〇βηι by several times of high-density polyethylene (HDPE) having a thickness of 20 and ethylene-vinyl acetate having a thickness of 180/m The two-layer film substrate of the copolymer was laminated on the layer of the ethylene-vinyl acetate copolymer to laminate an intermediate resin layer having a thickness of 130 μm. At this time, the glass transition temperature after crosslinking of the intermediate resin layer was 150 °C. Applying an adhesive composition to a PET separator having a thickness of 50 / zm and drying it by laminating by laminating a film laminated with an intermediate resin layer to laminate an adhesive layer having a thickness of 5 μm. An adhesive tape for surface protection of semiconductor wafers is produced. &lt;Comparative Example 6 &gt; 1 part by mass of the acrylic copolymer having a weight-average molecular weight of 800,000 containing a radical containing a carbon-carbon double bond and a group containing a radical and a mercapto group, respectively Copolymer isocyanate-based cross-linking agent Coronate L (trade name: manufactured by 曰 聚 polyurethane) 1 part by mass, photopolymerization initiator

Irgacure 1 84(商品名’ Ciba Japan公司製造）3質量份，以乙 酸乙醋調整濃度而獲得黏著劑組成物。 於厚度100 之聚對駄酸乙二酯基材膜（PET)之其中 一面’藉由擠出乙烯一乙酸乙烯酯共聚物（EVA)樹脂而形成 39 201124503 厚度50 # m之EVA樹脂層。又，於另一面，π圾丄 同樣使用乙烯 一乙酸乙烯酯共聚物（EVA)樹脂’藉由擠出而形成厚度15〇 之EVA樹脂層。此150/zm之eVA樹脂層之玻璃轉移 溫度為一42。〇。 著劑組成物，使 15〇 # m 之 EVA 之黏著劑層之半 於厚度50 &quot; m之PET隔離膜上塗佈黏 其乾燥，藉由將該黏著劑層組成物層與上述 樹脂層貼合而積層，製作具有厚度3〇 &quot; m 導體晶圓表面保護用黏著帶。 對上述實施例及比較例中所製作之半導體晶圓表面保 護用黏著帶，進行以下之試驗，評價其性能。將評價結果 記載於表1〜3。 1. 中間樹脂層之交聯後之玻璃轉移溫度測定 (試驗方法） 向中間樹脂層吹附乙酸乙酯，使中間樹脂層膨潤，使 用刮勺採集交聯後之中間樹脂層。然後，藉由真空乾燥使 所有溶劑飛濺之後，使用示差掃描熱卡計（DSC)進行測定。 2. 附有聚醯亞胺膜之半導體晶圓之製作 藉由以下方法製作附有聚醯亞胺膜之半導體晶圓。 於曰b圓整體之厚度為725#m且8英叫·直徑之石夕半導體 晶圓上，使用非感光性聚醯亞胺ριχ_ 34〇〇(商品名，日立 化成杜邦微系統（股）公司製造）作為聚醯亞胺，利用旋轉塗 佈機以一面進行邊緣清洗一面使乾燥後之膜厚成為6 # m之 方式進打塗佈。然後，於2〇(rc下進行3〇分鐘預烤，於35〇 C下進仃1小時正式烘烤，形成厚度6 # m之聚醯亞胺膜， 40 201124503 英吋直徑之半導體 從而獲得晶圓整體之厚度為 晶圓。 使用忒附有聚醯亞胺 夕峙膝，料〜干导體日日固’進灯以下3〜5 之5式驗對其性能進行評價。 3 ·薄膜研削性試驗 (試驗方法） 使用日東精機股份有限/入1 ^ ^ 穷1民么司製造之DR8500II(商品名） 作為貼附機，於以2之古土 ή匕办丨t .·方法所1作的8英吋晶圓之厚度為 725# m之附有聚醯亞胺膜夕功坐拔舰 妝膘之矽+導體晶圓上，貼合實施例 及比較例中所製作之半導體晶圓表面保護用黏著帶。此時 之貼α係利用裝置配套之調節器控制參數，分別於帶捲取 為 0 · 1 1 Μ Ρ 3·、帶拙屮為。1/CAyrn 柚出為〇.26MPa、隔離膜為0.20MPa、帶按 壓為0.17MPa、帶貼附也λκτκ 、附為0.26Mpa之條件下進行半導體晶圓 表面保護用黏著帶之貼合。然後，使用具有連續式機構之 研磨機（DISC〇股份有限公司製造之dfg876()(商品名）），將 25片晶圓分別研磨至厚度5〇&quot;m、3〇”、2〇&quot;m之厚度。 又，為提高晶圓之強度，而藉由乾式拋光進行最後精加工。 (評價） 對各實施例及各比較例中所製作之半導體晶圓表面保 護用黏著帶進行評價。其結果以如下之方式敎，將〇及 △ δ又為合格’將X設為不合格。 基本上不存在邊緣裂痕，25片晶圓均可研削：〇 觀察到少許邊緣裂痕但晶圓無裂縫且可研削，或25片 晶圓中1片〜2片有裂縫：△ 41 201124503 晶圓之3片以上有裂縫：x 4. 剝離試驗 (試驗方法） 使用上述3.薄膜研削性試驗中所研削之附有聚醯亞胺 膜之晶圓，並且使用併設於上述研磨機上之剝離機（DISC〇 股份有限公司製造之DFM2700(商品名））進行25片晶圓之 剝離性試驗。感壓型黏著帶之剝離係於5(rc下進行，放射 線硬化型黏著帶之剝離溫度係於照射500inj/ cm2之紫外線 後，於常溫下進行測定。 (評價） 對各實施例及各比較例中所製作之半導體晶圓表面保 護用黏著帶進行評價。其結果以如下之方式判定，將〇及 △設為合格。 帶可自2 5片晶圓上全部無問題地剝離：〇 帶可不使晶圓破損而剝離，但因剝離失敗而產生丨次 以上錯誤：△ 剝離中產生晶圓之破損、或無法自晶圓上剝離帶：χ 5. 搬送試驗 (試驗方法） 將上述3.薄膜研削試驗中於貼合有半導體晶圓表面保 護用黏著帶之狀態下將晶圓厚度研削i 5G&quot;m之附有帶之 晶圓，使用連續式裝置（DISC0股份有限公司製造之 DFG8760(商品名）及DISC0股份有限公司製造之 醒雇（商品名）之-體型），自背面研磨步驟搬送至切割 42 201124503 黏日日臈之貼合步驟及剝離 7驟。切割黏晶臈係使用FH—900 一 20(商品名，曰立化成工 系公司製造），貼合係於60°C下 進行。 (評價） 對各實施例及各比較例中 護用黏著帶進行評價。其結果 為合格。 所製作之半導體晶圓表面保 以如下之方式判定，將〇設 無吸附錯誤，可搬送：〇 產生吸附錯誤，產生搬送錯誤：χ 6_污染性試驗 (試驗方法） 使用日東精機股份有限公司製狀DR85〇〇n(商品名） 作為貼附機，於8英叶曰圓夕 央才日日圓之；度為725 &quot; m之矽鏡面晶圓 上，合實施例及比較例中所製作之半導體晶圓表面保護用 黏著帶。然後，感壓型黏著帶之剝離係於5(rc下進行，放 射線硬化型黏著帶係於照射5〇〇mJ/ cm2之紫外線後，於常 溫下剝離》 ' ’槿而利用xps(χ射線光電子光譜分析）測量將半導體 晶圓表面保護用黏著帶剝離後之晶圓表面之污染物之元素 比率。將由來自該黏著帶之轉印污染物引起之碳之增加量 與未貼合5亥黏著帶之空白晶圓相比，以mol%方式算出。xps 係於以下之條件下進行測定。 x 射線源：MgK 〇：、X 射線之 Take off angle : 45。 測定面積：1.1 mm 0 43 201124503 (評價） 對各實施例及各比較例中所製作之半導體晶圓表面保 護用黏著帶進行評價。其結果以如下之方式判定，將〇設 為合格。 C(碳）量（atomic。/。）在25以下：〇 C(碳）量（atomic%)大於 25 者：X 7.排斥係數及斥力測定試驗 (試驗方法） 使用東洋精機股份有限公司製作所製造之環剛度試驗 機（商品名），測定排斥係數7及斥力α。 將各實施例及各比較例中所製作之半導體晶圓表面保 護用黏著帶切割成寬度1 cm ’設置於環剛度試驗機上。此 時’於環長50mm以上之帶狀之該黏著帶之中央附近，製作 環長50mm之圓形環，測量將該圓形環自外側外壓入5mm 時所施加之荷重。將此時所獲得之荷重換算成該黏著帶之 每單位寬度，將以mN/ mm單位表示之值作為斥力^。將 該斥力α除以該黏著帶之基材樹脂膜之厚度之平方所得之 值作為排斥係數γ。 (評價） 對各實施例及各比較例中所製作之半導體晶圓表面保 護用黏著帶進行評價。其結果，將排斥係數為⑽ 以上且斥力為13mN/mm以下之情形設為合格。又，將斥 力為20mN/ mm以上者記作無法測定。 8.25°C及50°C下之黏著力測定試驗 201124503 (試驗方法） 對各實施例及各比較例中所製作之半導體晶圓表面保 護用黏著帶中之感壓型者，測定5〇°C下之黏著力。 自該黏著帶上選取3點寬度25mmx長度300mm之試驗 片，於經JIS R 6253中所規定之28〇號耐水研磨紙進行精 加工的JIS G 4305中所規定之厚度1 5mm〜2 〇mm之 SUS304鋼板上，使2kg之橡膠輥往返3次而壓接上述試驗 片。玫置1小時後，使用JIS B 7721中所規定之拉伸試驗 機，對壓接於SUS板上之該黏著帶之試驗片於5〇^下、相 對濕度49。/。下測量黏著力。測量係利用18〇度剝離法者， 此時之拉伸速度為300nm/min。 9.縱(MD)方向與橫(TD)方向之拉伸斷裂伸長率之測量 (試驗方法） ------，π扣羚衝壓半導 縱=表面保護用料帶之試樣，將對㈣繞之方向作為 取樣^將寬度方向作為橫方向（TD)，分料行η=3 置弓I線對各自取樣而仔之試樣之中央部向上下2Gmm之位 咖拉伸使^拉伸試驗機⑽B 7721)以拉伸速度_咖/ 申測疋線内斷裂時之延伸率。將3 ·欠 作為實際傕，斗筲讲η丄 今J -人測罝之平均值 ^ ” 计算縱力向之拉伸斷裂伸長率盥橫方+ 伸斷裂伸長率之差。 手，、橫方向之拉 45 201124503 【I ΐ 實施例6 3層構造 PET t-H 丙烯酸系 1 80萬 感壓型 〇 〇 〇 &lt; 〇 &lt;1 244 6.11 3.00 0.55 實施例5 3層構造 PET 00 ro o 丙烯酸系 〇 1 120萬 感壓型 〇 &lt; &lt;1 〇 〇 〇 2.21 寸 〇 0.18 實施例4 3層構造 PET 00 CO ro 丙烯酸系 〇 T (N VO 1 100萬 〇 感壓型 〇 〇 〇 〇 〇 〇 卜 2.54 0.52 0.23 實施例3 3層構造 PEN in CN 卜 丙烯酸系 〇 1 80萬 〇 m UV硬化型| 〇 〇 〇 〇 〇 〇 1078 卜 1 1 實施例2 3層構造 PET 00 CO o 丙烯酸系 ίο 1 聚合物反應型 80萬 ο CN UV硬化型 〇 〇 &lt; 〇 〇 〇 in 2.38 1 1 實施例1 3層構造 PET 00 CO o 丙烯酸系 〇 聚合物反應型 80萬 UV硬化型 〇 〇 〇 〇 〇 〇 2.25 1 1 構造 基材 基材之厚度(&quot;m) 縱方向與橫方向之拉伸斷裂伸長率之差(％) 中間層之種類 中間層之交聯後之玻璃轉移溫度(°c) 中間層之厚度(ym) 黏著劑之種類 黏著劑層之主聚合物之分子量 黏著劑層之厚度(&quot;m) 帶之種類 2.至5〇em之薄膜研削性 2.至30ym之薄膜研削性 2.至20&quot;m之薄膜研削性 3.剝離性 4.搬送性 5.对污染性 6.排斥係數τ (mN/mm3) 斥力a (mN) 7.於25°C下之對SUS板之黏著力(N/25mm) 於50°c下之對SUS板之黏著力(N/25mm) 201124503 【3&lt;】 實施例11 3層構造 PET 00 m Ο 丙烯酸系 ◦ κη (N ro 聚合物反應型 80萬 〇 UV硬化型 0 &lt; &lt; 〇 〇 〇 406 5.87 1 1 實施例10 3層構造 聚醯亞胺 ο 沄 丙烯酸系 Ο ΓΛ 聚合物反應型 80萬 〇 UV硬化型 〇 〇 〇 〇 〇 〇 On 1 1 實施例9 3層構造 PET (Ν 丙烯酸系 ο (Ν 聚合物反應型 80萬 UV硬化型 〇 〇 〇 &lt;3 〇 〇 229 12.9 1 1 實施例8 3層構造 PEN CN 卜 聚胺曱酸酯系 ο Γ^ι 1 80萬 〇 ro 感壓型 〇 〇 〇 〇 〇 1105 6.91 &lt;Ν 0.29 實施例7 3層構造 PET οο CO Ο 丙烯酸系 Ο 寡聚物反應型 70萬 UV硬化型 〇 〇 〇 &lt; 〇 〇 r- &lt; 2.21 1 1 構造 基材 基材之厚度(ym) 縱方向與橫方向之拉伸斷裂伸長率之差(％) 中間層之種類 中間層之交聯後之玻璃轉移溫度(°c) 中間層之厚度（#m) 黏著劑之種類 黏著劑層之主聚合物之分子量 黏著劑層之厚度(&quot;m) 帶之種類 2.至50&quot;m之薄膜研削性 2.至30 μ m之薄膜研削性 2.至20&quot;m之薄膜研削性 3.剝離性 | 4.搬送性 5.耐污染性 rO B \ i u -Ul. &lt;5 斥力a (mN) 1 7.於25°C下之對SUS板之黏著力(N/25mm) \ 於50°c下之對SUS板之黏著力(N/25mm)| s 201124503 比較例6 4層構造 EVA/PET(2 層） EVA T τ-Η 聚合物反應型 80萬 | uv硬化型| &lt; X X X 〇 〇 無法測定 20以上 1 1 比較例5 3層構造 HDPE/EVA 200 149 丙烯酸系 1 聚合物反應型 80萬 UV硬化型 &lt; X X 〇 X 〇 19.2 7.69 1 1 比較例4 2層構造 HDPE/EVA 〇 〇 1 1 寡聚物反應型 80萬 〇 ΓΟ UV硬化型 〇~ 〇 〇 X X &lt; 14.3 1.43 1 1 比較例3 ~2層構造~ PET 〇 CN 1 1 寡聚物反應型 90萬 in UV硬化型 δ &lt; &lt; X 〇 &lt; 174 17.36 1 1 比較例2 2層構造 EVA ν〇 180 1 1 1 40萬 〇 感壓型 〇 〇 〇 〇 X X 00 2.31 0.55 0.18 比較例1 3層構造 Ο 100 丙烯酸系 〇 〇 聚合物反應型 80萬 UV硬化型 〇 &lt;] 0 〇 X 〇 2.02 1 1 構造 基材 基材之厚度(；zm) 縱方向與橫方向之拉伸斷裂伸長率之差(％) 中間層之種類 P $ 隸 裔 V Sh •S- 中間層之厚度(/zm) 黏著劑之種類 黏著劑層之主聚合物之分子量 黏著劑層之厚度(&quot;m) 帶之種類 2.至50&quot;m之薄膜研削性 2.至30//m之薄膜研削性 2.至20&quot;m之薄膜研削性 3.剝離性 4.搬送性 5.耐污染性 rO 園 \ 1 U Oil. v〇 斥力a(mN) 7.於25°C下之對SUS板之黏著力(N/25mm) 囊 &lt;N \ 邑 钟？ 笔 00 P 00 葙 卜 P 〇 yr\ 00寸 201124503 〜3所示’於比較例1中’由於縱方向與橫方向 之拉伸斷裂伸長率之差超過35%，並且由於半導體晶圓表 面保濩用黏著帶勉曲，故搬送性不合格。於比較例2中， 由:排斥係數過小，故無法續正晶圓本身之魑曲，搬送性 不D格，並且由於拉伸斷裂伸長率之差超過35% ,結果帶 本身亦翹曲。於比較例3中，由於對基材樹脂膜使用PET， 故搬送性為合格，&amp;由於不具有中間樹脂層，因此於薄膜 研肖i夺緩衝性不足，薄膜研削性差，結果產生邊緣裂痕。 '' ;斥力两’故於剝離帶時帶本身難以弯曲，因此結 果於剝離時晶圓裂縫或產生剝離不良。於比較例4及5中， 排斥係數過小，搬送性不合格。於比較例6中，由於使用 〜材之PET，故搬送性無問題，但薄膜研削性差結果於薄 膜研削時大量產生裂縫。 另—方面可知，實施例1〜實施例11之半導體晶圓表 面保護用黏著帶的搬送試驗及薄膜研削試驗結果均為合格 級別’剝離亦可無問題地進行。尤其於實施例卜實施例3、 實施=4及實施例1G巾’結果為薄膜研削性及搬送性優 異。右使用聚醯亞胺作為基材，則性能良好，4旦由於成本 门因此，ϋ而吕最優異為實施例卜實施例3及實施例4。 [產業上之可利用性] 根據本發Β月’即使於將半導體晶圓纟面保護用黏著帶 貼合於半導體晶圓之狀態下對該晶圓背面進行研削，亦可 製成1〇(^m以下之薄膜曰曰曰圓。因此，本發明適合用作貼合 於半導體晶圓表面而使用之表面保護用黏著帶。 49 201124503 以上雖說明本發明與其實施態樣，但只要本發明沒有 特別指定’則即使在說明本發明之任一細部令，皆非用以 限定本發明者，且只要在不遠反本案申請專利範圍所示之 發明精神與範圍下，應作最大範圍的解釋。 本案係主張基於2009年月22日於日本提出申請之 特願 2009 ~~ 291497 2Ω1Π Λ ww/及2010年9月29日於日本提出申請之3 parts by mass of Irgacure 1 84 (trade name 'manufactured by Ciba Japan Co., Ltd.) was adjusted to a concentration of ethyl acetate to obtain an adhesive composition. One of the polyethylene terephthalate base film (PET) having a thickness of 100 was formed by extruding an ethylene-vinyl acetate copolymer (EVA) resin to form an EVA resin layer having a thickness of 50 # m. Further, on the other hand, π 丄 丄 also uses an ethylene-vinyl acetate copolymer (EVA) resin to form an EVA resin layer having a thickness of 15 Å by extrusion. The 150/zm eVA resin layer had a glass transition temperature of one 42. Hey. The coating composition is coated on the PET separator of thickness 50 &quot; m by half of the adhesive layer of the EVA of 15 〇#m, by sticking the layer of the adhesive layer with the above resin layer In combination, an adhesive tape having a thickness of 3 〇&quot; m conductor wafer surface protection is produced. The following tests were carried out on the adhesive tape for semiconductor wafer surface protection produced in the above Examples and Comparative Examples, and the performance was evaluated. The evaluation results are shown in Tables 1 to 3. 1. Measurement of glass transition temperature after crosslinking of the intermediate resin layer (Test method) Ethyl acetate was blown to the intermediate resin layer to swell the intermediate resin layer, and the crosslinked intermediate resin layer was collected using a spatula. Then, after all the solvents were spattered by vacuum drying, the measurement was carried out using a differential scanning calorimeter (DSC). 2. Fabrication of a semiconductor wafer with a polyimide film A semiconductor wafer with a polyimide film was produced by the following method. The non-photosensitive polyamidimide ριχ_ 34〇〇 (trade name, Hitachi Chemical Co., Ltd.) is used on the shiba semiconductor wafer with a thickness of 725#m and 8 inches in diameter. In the case of the polyimine, the edge coating was performed on one side by a spin coater, and the film thickness after drying was 6 #m. Then, it was pre-baked at 2 〇 (rc for 3 minutes, and then baked at 35 ° C for 1 hour to form a polyimide film with a thickness of 6 # m, 40 201124503 inch diameter semiconductor to obtain crystal The thickness of the whole circle is the wafer. The performance is evaluated by using the 忒 醯 醯 , , , , , 干 干 干 干 干 干 干 干 干 干 干 干 干 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜Test (test method) Use the DR8500II (trade name) manufactured by Nitto Seiki Co., Ltd. as a sticking machine, and do it in the ancient land of 2 The thickness of the 8-inch wafer is 725# m with the polyimide film on the conductor wafer, and the surface protection of the semiconductor wafer fabricated in the comparative example and the comparative example. Adhesive tape is used. At this time, the α-series is controlled by the regulator control parameters, which are respectively taken from the tape to 0 · 1 1 Μ Ρ 3·, with 拙屮. 1/CAyrn pomelo is 〇.26MPa, isolated For wafer surface protection, the film is 0.20 MPa, the tape is pressed to 0.17 MPa, and the tape is attached with λκτκ and attached to 0.26 MPa. Then, the belt is bonded. Then, using a grinder having a continuous mechanism (dfg876() (trade name) manufactured by DISC Co., Ltd.), 25 wafers are individually ground to a thickness of 5 〇&quot;m, 3〇 The thickness of "2" &quot;m. In addition, in order to improve the strength of the wafer, the final finishing is performed by dry polishing. (Evaluation) For the surface protection of the semiconductor wafer produced in each of the examples and the comparative examples The adhesive tape was evaluated. The result was as follows: 〇 and Δ δ were again qualified 'X was unqualified. There were basically no edge cracks, and 25 wafers could be ground: a little edge crack was observed However, the wafer is crack-free and can be ground, or 1 to 2 of 25 wafers have cracks: △ 41 201124503 3 or more wafers have cracks: x 4. Peel test (test method) Use the above 3. Film grinding The wafer with the polyimide film was ground in the test, and the peeling property of 25 wafers was performed using a stripping machine (DFM2700 (trade name) manufactured by DISC Corporation) equipped with the above-mentioned grinding machine. Test. Peeling of pressure-sensitive adhesive tape The peeling temperature of the radiation-curable adhesive tape was measured at 5 (r), and the ultraviolet light was irradiated at 500 inj/cm 2 , and then measured at room temperature. (Evaluation) The semiconductor crystals produced in the respective examples and comparative examples were prepared. The round surface protection was evaluated by an adhesive tape. The results were determined as follows, and 〇 and △ were determined to be acceptable. The tape can be peeled off from all of the 25 wafers without problems: the tape can be peeled off without damage to the wafer. However, the above-mentioned errors occurred due to the failure of the peeling: △ The wafer was damaged during the peeling, or the tape could not be peeled off from the wafer: χ 5. The transport test (test method) The above-mentioned 3. Film grinding test was applied In the state of the adhesive tape for semiconductor wafer surface protection, the thickness of the wafer is ground with i5G&quot;m, and the wafer is attached, using a continuous device (DFG8760 (trade name) manufactured by DISC0 Co., Ltd. and DISC0 Co., Ltd.) Wake up (trade name) - body type, from the back grinding step to the cutting 42 201124503 Adhesive bonding step and peeling 7 steps. The diced die-bonding system was carried out using FH-900-20 (trade name, manufactured by 曰立化成工株式会社), and the bonding system was carried out at 60 °C. (Evaluation) The protective adhesive tapes in each of the examples and the comparative examples were evaluated. The result is qualified. The surface of the fabricated semiconductor wafer is determined as follows, and no adsorption error is generated, and it can be transported: 吸附 an adsorption error occurs, and a transport error occurs: χ 6_Contamination test (test method) Using Nitto Seiki Co., Ltd. DR85〇〇n (trade name) as a sticking machine, which is made in the 8th yin yang yang yang yang; the 725 &quot; m 矽 mirror wafer, made in the examples and comparative examples Adhesive tape for semiconductor wafer surface protection. Then, the peeling of the pressure-sensitive adhesive tape is performed at 5 (rc, the radiation-curable adhesive tape is irradiated with ultraviolet rays of 5 〇〇mJ/cm2, and is peeled off at normal temperature), and xps (χ-ray photoelectron) is used. Spectral Analysis) Measure the element ratio of the contaminant on the surface of the wafer after peeling off the surface of the semiconductor wafer. The amount of carbon caused by the transfer of contaminants from the adhesive tape is not bonded to the 5 Å adhesive tape. The blank wafer was calculated in mol%. The xps was measured under the following conditions: x-ray source: MgK 〇: X-ray Take off angle: 45. Measurement area: 1.1 mm 0 43 201124503 (Evaluation The adhesion of the semiconductor wafer surface protection adhesive tape produced in each of the examples and the comparative examples was evaluated. The results were determined as follows, and the enthalpy was determined to be acceptable. The C (carbon) amount (atomic) was 25 or less: 〇C (carbon) amount (atomic%) is greater than 25: X 7. Repulsive coefficient and repulsion measurement test (test method) Using a ring stiffness tester (trade name) manufactured by Toyo Seiki Co., Ltd., measuring The coefficient of repulsive factor 7 and the repulsive force α. The semiconductor wafer surface protective adhesive tape produced in each of the examples and the comparative examples was cut into a width of 1 cm 'on the ring stiffness tester. At this time, the ring length was 50 mm or more. In the vicinity of the center of the strip of the adhesive tape, a circular ring having a ring length of 50 mm was produced, and the load applied when the circular ring was pressed from the outside to the outside of 5 mm was measured. The load obtained at this time was converted into the adhesive tape. The value expressed in units of mN/mm is used as the repulsive force per unit width. The value obtained by dividing the repulsive force α by the square of the thickness of the base resin film of the adhesive tape is used as the rejection coefficient γ. (Evaluation) For each Example And the adhesive tape for semiconductor wafer surface protection produced in each comparative example was evaluated. As a result, the rejection coefficient was (10) or more and the repulsive force was 13 mN/mm or less, and the repulsive force was 20 mN/mm or more. It is not possible to measure. 8.24 ° C and 50 ° C adhesion test test 201124503 (test method) For the pressure sensitive type of the semiconductor wafer surface protection adhesive tape produced in each of the examples and the comparative examples , determination Adhesion at 5 ° C. A test piece of 3 mm width 25 mm x 300 mm length was selected from the adhesive tape, as specified in JIS G 4305, which was finished by the 28 耐 water-resistant abrasive paper specified in JIS R 6253. The SUS304 steel plate having a thickness of 15 mm to 2 mm was placed on the SUS304 steel plate with a thickness of 2 kg, and the test piece was pressure-bonded three times. After being placed for 1 hour, the tensile tester specified in JIS B 7721 was used for crimping. The test piece of the adhesive tape on the SUS plate was placed under a pressure of 49 Torr. /. The adhesion is measured underneath. The measurement system utilized the 18-degree peeling method, and the stretching speed at this time was 300 nm/min. 9. Measurement of tensile elongation at break in the longitudinal (MD) direction and transverse (TD) direction (test method) ------, π guatemum stamping semi-conductive longitudinal = surface protective tape sample, will For the direction of (4) winding, take the width direction as the horizontal direction (TD), the distribution line η=3, and the I line for each sample, and the center of the sample is up and down 2Gmm. The tensile tester (10) B 7721) was used to determine the elongation at break in the tensile speed _ coffee / test. 3 · owe as the actual 傕, 筲 筲 丄 丄 丄 丄 J J J J J J J J J J J 平均值 ” ” ” 计算 计算 计算 计算 计算 计算 计算 计算 计算 计算 计算 计算 计算 计算 计算 计算 计算 计算 计算 计算 计算 计算 计算Pulling 45 201124503 [I 实施 Example 6 3-layer structure PET tH acrylic system 1.8 million pressure-sensitive type 〇〇〇 &lt; 〇 &lt;1 244 6.11 3.00 0.55 Example 5 3-layer structure PET 00 ro o Acrylic 〇1 1.2 million pressure sensitive type &lt;&lt;1 〇〇〇2.21 inch 〇0.18 Example 4 3-layer structure PET 00 CO ro Acrylic 〇T (N VO 1 1 million 〇 pressure-sensitive type 2.5 2.54 0.52 0.23 Example 3 3-layer structure PEN in CN Bu-acrylic 〇1,800,000 m UV-curing type | 〇〇〇〇〇〇1078 Bu 1 1 Example 2 3-layer structure PET 00 CO o Acrylic ίο 1 polymer Reaction type 800,000 ο CN UV hardening type 〇〇&lt; 〇〇〇in 2.38 1 1 Example 1 3-layer structure PET 00 CO o Acrylic ruthenium polymer reaction type 800,000 UV-curing type 〇〇〇〇〇〇2.25 1 1 Structure the thickness of the substrate substrate (&quot;m) Vertical and horizontal Difference in tensile elongation at break (%) Type of intermediate layer Glass transition temperature after cross-linking of intermediate layer (°c) Thickness of intermediate layer (ym) Type of adhesive Type Molecular weight of main polymer of adhesive layer The thickness of the agent layer (&quot;m) The type of the tape 2. The film-grinding property of the film of 2 to 5 〇 2. The film-grindability of the film of 2 to 30 μm 2. The film-grindability of the film of 2 to 20 m 3. Peelability 4. Transportability 5. Contamination 6. Repulsive coefficient τ (mN/mm3) Repulsive force a (mN) 7. Adhesion to SUS plate at 25 ° C (N/25 mm) Adhesion to SUS plate at 50 ° C ( N/25mm) 201124503 [3&lt;] Example 11 3-layer structure PET 00 m 丙烯酸 Acrylic ◦ κη (N ro polymer reaction type 800,000 〇 UV curing type 0 &lt;&lt; 〇〇〇 406 5.87 1 1 Example 10 3-layer structure Polyimine ο 沄 Acrylic Ο 聚合物 Polymer reactive type 800,000 〇 UV hardening type 1 On 1 1 Example 9 3-layer structure PET (Ν Acrylic ο (Ν Polymer reaction Type 800,000 UV-curing type 〇〇〇&lt;3 〇〇229 12.9 1 1 Example 8 3-layer structure PEN CN 聚polyamine phthalate ο Γ^ι 1 800,000 〇ro Profile 〇〇〇〇〇1105 6.91 &lt;Ν 0.29 Example 7 3-layer structure PET οο CO 丙烯酸 Acrylic Ο Oligomer-reactive type 700,000 UV-curing type 〇〇〇 〇〇r- &lt; 2.21 1 1 Structure substrate base thickness (ym) Difference between longitudinal and transverse tensile elongation at break (%) Type of intermediate layer Cross-linking glass transition temperature (°c) Thickness of intermediate layer (# m) Type of adhesive: Thickness of the molecular weight of the main polymer of the adhesive layer (&quot;m) Type of tape 2. To 50&quot;m film-grinding property 2. Film-grinding property of 2 to 30 μ m 2. To 20&quot;m film grinding property 3. Peeling property 4. Transportability 5. Pollution resistance rO B \ iu -Ul. &lt;5 Repulsive force a (mN) 1 7. SUS plate at 25 ° C Adhesion (N/25mm) \ Adhesion to SUS plate at 50°C (N/25mm)| s 201124503 Comparative Example 6 4-layer structure EVA/PET (2 layers) EVA T τ-Η Polymer reactive type 800,000 | uv hardening type | &lt; XXX 〇〇 can not be measured 20 or more 1 1 Comparative example 5 3-layer structure HDPE/EVA 200 149 Acrylic 1 polymer reactive type 800,000 UV curing type XX 〇 X 〇19.2 7.69 1 1 Comparative Example 4 2-layer structure HDPE/EVA 〇〇1 1 oligomer reaction type 800,000 〇ΓΟ UV-curing type 〇~ 〇〇 XX &lt; 14.3 1.43 1 1 Comparative Example 3 ~ 2 layer structure ~ PET 〇CN 1 1 oligomer reaction type 900,000 in UV hardening type δ &lt; X 〇 &lt; 174 17.36 1 1 Comparative Example 2 2-layer structure EVA ν〇180 1 1 1 400,000 〇 pressure-sensitive type 〇〇 〇〇XX 00 2.31 0.55 0.18 Comparative Example 1 3-layer structure Ο 100 Acrylic ruthenium polymer reaction type 800,000 UV-curing type 〇&lt;] 0 〇X 〇2.02 1 1 Structure substrate substrate thickness (;zm) Difference between tensile elongation at break in the longitudinal direction and transverse direction (%) Type of intermediate layer P $ Dependent V Sh • S- Thickness of intermediate layer (/zm) Type of adhesive: Molecular weight of main polymer of adhesive layer Thickness of the adhesive layer (&quot;m) Type of tape 2. to 50&quot;m film-grinding property 2. Film penetration of 2 to 30//m 2. Film penetration of 2 to 20&quot; m 3. Peeling property 4. Transportability 5. Pollution resistance rO 园 \ 1 U Oil. v 〇 repulsive force a (mN) 7. Adhesion to SUS plate at 25 ° C (N / 25mm) sac &lt; N \ 邑 clock? Pen 00 P 00 葙 P P 〇yr\ 00 inch 201124503 ~ 3 shown in 'Comparative Example 1' due to the difference between the tensile elongation at break in the longitudinal direction and the transverse direction exceeds 35%, and due to the surface protection of the semiconductor wafer It is distorted by the adhesive tape, so the conveyability is unqualified. In Comparative Example 2, since the rejection coefficient was too small, the distortion of the wafer itself could not be continued, the transportability was not D, and the difference in tensile elongation at break exceeded 35%, and the tape itself was warped. In Comparative Example 3, since PET was used for the base resin film, the conveyability was satisfactory, and since the intermediate resin layer was not provided, the film was insufficient in the film, and the film was poor in the grinding property, resulting in edge cracks. ''; repulsion two', so the tape itself is difficult to bend when the tape is peeled off, so that the wafer crack or peeling failure occurs when peeling. In Comparative Examples 4 and 5, the rejection coefficient was too small, and the transportability was unacceptable. In Comparative Example 6, since the PET of the material was used, there was no problem in the conveyability, but the poor film-forming property resulted in a large amount of cracks during the film grinding. On the other hand, it is understood that the results of the conveyance test and the film-grinding test of the adhesive tape for protecting the surface of the semiconductor wafer of Examples 1 to 11 are all acceptable levels, and the peeling can be carried out without problems. In particular, the results of Example 3, Example 4, and Example 1G towel were excellent in film sharpness and conveyability. When polyethylenimine was used as the substrate on the right, the performance was good, and since it was a cost door, the most excellent examples were Examples 3 and 4. [Industrial Applicability] According to the present invention, even if the semiconductor wafer wafer protective tape is bonded to the semiconductor wafer, the back surface of the wafer can be ground. The film of the order of ^m or less is round. Therefore, the present invention is suitable for use as an adhesive tape for surface protection used for bonding to the surface of a semiconductor wafer. 49 201124503 Although the present invention and its embodiments are described above, as long as the present invention does not In particular, any description of the details of the invention is not intended to limit the invention, and the scope of the invention should be construed in the broadest scope of the invention. This case is based on the 2009-~ 291497 2Ω1Π Λ ww/ application filed in Japan on September 22, 2009 and filed in Japan on September 29, 2010.

特願 2010—220068 之優先權去，士 A 、 馆1元權考本發明係參照此等申請案 並將其内容加入作為本說明書之一部份。 【圖式簡單說明】 圖1’係表示本發明之车道脚日面士 牛導體日日圓表面保護用黏著帶之 —實施形態之剖面圖。 【主要元件符號說明】 1 基材樹脂膜 2 黏著劑層 3 中間樹脂層 20半導體晶圓表面保護用黏著帶 50The priority of 2010-220068 is to go to the A, and the 1st right of the library. The invention refers to these applications and adds the contents as part of this specification. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an embodiment of an adhesive tape for a day-to-day contact of a cow's conductor day-circle surface of the present invention. [Main component symbol description] 1 Substrate resin film 2 Adhesive layer 3 Intermediate resin layer 20 Adhesive tape for semiconductor wafer surface protection 50

Claims (1)

201124503 七、申請專利範圍： 1. -種半導體晶圓纟面保護用㈣帶，纟係通過基材樹 脂膜與於該基材樹脂膜上含有丙烯酸聚合物及/或聚胺酯 丙烯酸酯（polyurethane acrylate)之基礎樹脂成分交聯而成 之中間樹脂層而直接具有黏著劑層者，其特徵在於： “從以下述條件⑷〜⑷測量該半導體晶圓表面保護用黏 者帶而得之環剛度（loop Stiffness)之負載荷重所求出的每單 位寬度之斥力α，除以基材厚度沒之平方而得之排斥係數 r在lOOmN/mm1以上，斥力〇在13mN/mm以下且縱 方向與橫方向之拉伸斷裂伸長率之差在35%以下； (a) 裝置 環剛度試驗機（商品名，東洋精機公司製造） (b) 環（s式驗片）形狀 長度50mm以上、寬度10rnm (c) 壓頭之壓入速度 3.3mm/ sec (d) 壓頭之壓入量 自壓頭與環接觸之時刻起壓入5mm。 2. 如申請專利範圍第1項之半導體晶圓表面保護用黏 著帶，其中，該中間樹脂層之丙烯酸聚合物具有羥基及羧 基。 &amp; 51 1 ·如申請專利範圍第1項之半導體晶圓表面保護用黏 著帶’其中’該中間樹脂層之聚胺酯丙烯酸酯具有經基及 緣基。 201124503 4. 如申請專利範圍第1項至第3項中任一項之半導體晶 圓表面保護用黏著帶，其中，該中間樹脂層之交聯後之破 璃轉移溫度為-1 〇〜3 〇它。 5. 如申請專利範圍第1項至第4項中任一項之半導體晶 圓表面保s蒦用黏著帶，其中，該基材樹脂膜為聚酯樹脂膜。 6. 如申請專利範圍第5項之半導體晶圓表面保護用黏 著帶’其中，該聚酯樹脂膜為聚對酞酸乙二酯膜。 ^ 7.如申請專利範圍第5項或第ό項之半導體晶圓表面保 濩用黏著帶，其中，該聚酯樹脂臈之厚度為25〜75 ν m。 8‘如申請專利範圍第1項至第7項中任一項之半導體晶 圓表面保護用黏著帶，其中，該半導體晶圓表面保護用黏 著帶為感壓型黏著帶，20〜25 °C下之對SUS研磨面之黏著 力在〇.5N/25mm以上，且50〇c下之對sus研磨面之黏著 力在0.5N / 25mm以下。 9. 如申請專利範圍第8項之半導體晶圓表面保護用黏 著帶，其中，構成該黏著劑層之基礎樹脂之重量平均分子 量在100萬以上。 10. 如申請專利範圍第丨項至第7項中任一項之半導體 晶圓表面保護用黏著帶，其中，該黏著劑層會因為照射放 射線而使得黏著力變低。 11 ·如申請專利範圍第10項之半導體晶圓表面保護用 黏著帶’其中’該黏著劑層係使用以下述聚合物作為主成 分的基礎樹脂而成，該聚合物含有對主鏈具有1個以上含 放射線聚合性碳—碳雙鍵之基的丙烯酸系單體作為構成單 52 201124503 元0 八、圖式： (如次頁） 53201124503 VII. Patent application scope: 1. A semiconductor wafer for surface protection (4) tape, which comprises a base resin film and an acrylic polymer and/or polyurethane acrylate on the base resin film. The intermediate resin layer obtained by crosslinking the base resin component directly has an adhesive layer, and is characterized by: "The ring stiffness obtained by measuring the adhesive tape for surface protection of the semiconductor wafer by the following conditions (4) to (4) The repulsive force α per unit width obtained by the load of Stiffness is divided by the square of the thickness of the substrate, and the repulsive coefficient r is above 100 mN/mm1, and the repulsive force is below 13 mN/mm and the longitudinal and lateral directions are The difference between tensile elongation at break is 35% or less; (a) Device ring stiffness tester (trade name, manufactured by Toyo Seiki Co., Ltd.) (b) Ring (s-type test piece) has a shape length of 50 mm or more and a width of 10 rnm (c) The press-in speed of the head is 3.3mm/sec (d) The press-in amount of the indenter is pressed 5mm from the moment when the indenter is in contact with the ring. 2. The adhesive tape for surface protection of semiconductor wafers according to item 1 of the patent application, among them The acrylic polymer of the intermediate resin layer has a hydroxyl group and a carboxyl group. &amp; 51 1 · The adhesive tape for surface protection of a semiconductor wafer as claimed in claim 1 wherein the polyurethane resin of the intermediate resin layer has a base and a margin The semiconductor wafer surface protection adhesive tape according to any one of claims 1 to 3, wherein the intermediate resin layer has a glass transition temperature of -1 〇 after cross-linking. 3. The adhesive tape for semiconductor wafer surface protection according to any one of claims 1 to 4, wherein the base resin film is a polyester resin film. The adhesive tape for semiconductor wafer surface protection of the fifth aspect of the patent range wherein the polyester resin film is a polyethylene terephthalate film. ^ 7. The semiconductor wafer of claim 5 or 3 The adhesive tape for surface protection, wherein the thickness of the polyester resin is 25 to 75 ν m. 8' The adhesive tape for surface protection of a semiconductor wafer according to any one of claims 1 to 7, Wherein, the semiconductor wafer surface is protected The adhesive tape is a pressure-sensitive adhesive tape. The adhesion to the SUS abrasive surface at 20~25 °C is above 5N/25mm, and the adhesion to the sus abrasive surface at 50〇c is 0.5N / The adhesive tape for semiconductor wafer surface protection according to claim 8 wherein the weight average molecular weight of the base resin constituting the adhesive layer is 1,000,000 or more. The adhesive tape for semiconductor wafer surface protection according to any one of the seventh aspect, wherein the adhesive layer has a low adhesive force due to irradiation of radiation. 11 . The adhesive tape for semiconductor wafer surface protection of claim 10, wherein the adhesive layer is formed using a base resin having a polymer as a main component, and the polymer contains one main chain The above-mentioned acrylic monomer containing a radiation-polymerizable carbon-carbon double bond is used as a constituent 52. 201124503 yuan 0 VIII, the drawing: (as the next page) 53
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TWI790004B (en) * 2021-11-18 2023-01-11 山太士股份有限公司 Gap filling protection tape and grinding method of wafer

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CN102754200B (en) 2015-05-27
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