201111796 六、發明說明： 【發明所屬之技術領域】 本發明係有關一種高頻懸臂式探針結構，尤其是依序被絕緣 包覆層、低介電係數絕緣材料以及接地導電層包覆而具有改善阻 抗匹配的探針。 【先前技術】201111796 VI. Description of the Invention: [Technical Field] The present invention relates to a high frequency cantilever probe structure, in particular, sequentially coated with an insulating coating layer, a low dielectric constant insulating material and a grounded conductive layer. Improve impedance matching probes. [Prior Art]
積體電路（1C)在進行封裝（Package)前，需進行晶圓測試 (Wafer Test)，歸選出晶圓中合格的晶片，避免封裝到不良的晶 片，以節省封裝資源。目前’晶圓測試係利用測試機(如㈣傳 送或接收麵讀’並經由探針卡(Pn)be咖)將電氣信號連接 至晶片的測試點，比如焊塾。探針卡具有複數個探針，每一制 係對應於晶片的-測試點，用以傳送相對應的電氣信號，該電氣 信號連接電路板而傳送至順細断信號戦。〜 參閱第-圖，習用技術的探針卡的示意圖。如第一圖所示， 習用技術的探針卡至少包括複數個探針41、導電膠犯、固定環幻 及電路板44，其中探針41具有探針尖端411，接觸或接近晶片的 ^試細中未顯示），藉以傳送電氣信號，探針Μ的本體由絶緣 =包覆峨輪⑽，响_13料由瓣&包覆， 、， *研42 構，以確保所傳 職麵43 ，且探針 ，讀屬焊點441而電氣連接至電路板44。 201111796 - 雖然上述習用技術的探針卡能有效防止外界干擾，提高探針 訊號傳送速度，並減少插入損失（Insertion L〇ss)及回返損失 (Return Loss)，不過探針卡的探針41在靠近探針尖端411處仍 具有約2mm的裸露部*，而對高達數GHz至數百GHz的高頻信號 造成阻抗不易匹配的問題。以5〇Ω阻抗為阻抗匹配之目標值為 例’實際的阻抗可能會高達80Ω，使信號品質大幅降低，甚至無 法使測試機獲得可量測的信號。因此，需要一種能縮減探針裸露 φ部分且具有類似同軸覽線的結構，藉以改善高頻阻抗的變動範 圍’進而達到阻抗匹配。 & 【發明内容】 —本發明之主要目的在提供—種高縣f式探針結構，用以 送高頻輸人錢至待_“，並傳祕戦W的高頻輸出 號以供量測’且該高賴臂式探針結獅包括至少—探針 包覆層、低介電係數絕緣材料以及接地導電層，其中絕、费 了為空氣、環氧樹脂環繞於探針的探針導體之間，為探針導= 第一絕緣材料’提供更佳電氣傳導之介質，低介 緊貼探針導體，低介雷係金I 巴緣材ί :環氧麟結合，接轉電層祕覆财電健絕 被導電層包_形成類似_魏板之堆疊結構，饰 贱㈣動範圍，改善阻抗匹配問題，提高响 傳輪H以大巾1提升高頻信號量測的準確度。 201111796 【實施方式】 以下配合圖式及元件符號對本發明之實施方式做更詳細的說 明，俾使熟習該項技藝者在研讀本說明書後能據以實施。 參閱第二圖，本發明高頻懸臂式探針結構的示意圖。如第二 圖所示，本發明的高頻懸臂式探針結構包括至少一探針41、絕緣 包覆層50、低介電係數絕緣材料以及接地導電層，其中探 ^ 針41具有探針尖端411與探針導體412,用以傳送高頻電氣信號， 且兩頻電氣信號包括傳送至待測試晶片的高頻輸人信號以及供量 測的待測試晶月的高頻輸出信號。絕緣包覆層5〇可包含空氣及環 氧樹脂(印oxy)的至少其中之一，環繞於探針導體412之間，只露 出探針尖端411以及很少部分的探針導體412，藉以提供電氣絕緣 與較佳的訊號傳導品質。低介電係數絕緣材料6〇係緊貼探針導體 412，而接地導電層70再包覆低介電係數絕緣材料6〇，因此探針 φ導體412與低介電係數絕緣材料6〇與導電層70形成類似印刷電 路板之堆疊結構’以防止外轩擾，確保所傳送之高頻電氣信號 的品質。 。儿 此外’振針4卜絕緣包覆層5〇、低介電係數絕緣材料卯以 及接地導電層7〇結合成—體，因此高頻懸臂式探針結構具有機械 結構高度可變性，柯輕㈣顧於如上述第—圖之相技術的 探針卡中’結合本發明與習用技術的優點。 參閱第三®，本發明第—實施例高頻歸式探針結構的剖示 201111796 圖低，丨電係數絕緣材料6〇上下緊貼探針導體412的上下二側， 而、”邑.、彖包覆層50包含空氣52與環氧樹脂54,且相鄰探針導體412 2間係以空氣52 _ ’絕緣包覆層5G的環氧樹脂54位於絕緣包 覆層5G的二端，上下黏結低介電係數絕緣材料即，提供低介: 數絕緣材料6G維持對探針導體412的上下麗合力。環氧樹脂也可 以絕緣性的陶級料取代。接地導電層7〇包括高導電性材料 如銅銀、金，或銅、銀、金的至少其中之二的合金。 圖。=本!明第二實施例高頻懸臂式探針結構的剖示 針 ^例比較’在第二實施例的高頻懸臂式探 1施術Γ絕緣包覆層5G的構造不同以外，其餘元件皆與第 導體412的目絕緣包覆層5〇的環氧樹脂54係部分填充於探針 *气52勺圍接觸到探針導體412，使得絕緣包覆層50的 工虱52包圍住探針導體412。 圖。trr ’本發㈣三實關高麵料探針結構的剖示 =心第瑜_高頻懸臂式探 二實施例_。==層=曝働外，其餘元件皆與第 、邑、毒包讀50只包含環氧樹脂54，而不包含第一 ::=:::412的空氣52，'_針導㈣二 412。 、滿因此’％乳樹脂％係接觸到探針導體 減，探針結構可使探針41的裸露部分大-因此使奴板餘針之_贼能更純配，提高探針的高 201111796 頻電氣信號之傳送速度，財高侧穩定性。 、斤^者僅為用以解釋本發明之較佳實施例，並非企圖據 乂對本毛明做任何形式上之限制，是以，凡有在相同之發明精神 下所作有關本發明之任何修飾或變更，皆仍應包括在本發明意圖 保護之範疇。 "The integrated circuit (1C) requires a wafer test (Wafer Test) before packaging, and selects the qualified wafer in the wafer to avoid packaging into a bad wafer to save packaging resources. Currently, the wafer test system uses a test machine (such as (4) to transmit or receive face readings and connect electrical signals to the test points of the wafer via a probe card (Pn), such as solder bumps. The probe card has a plurality of probes, each system corresponding to the test point of the wafer for transmitting a corresponding electrical signal that is coupled to the circuit board for transmission to the fine break signal. ~ Refer to the figure, a schematic diagram of the probe card of the conventional technology. As shown in the first figure, the conventional probe card includes at least a plurality of probes 41, a conductive adhesive, a fixed ring and a circuit board 44, wherein the probe 41 has a probe tip 411, which is in contact with or close to the wafer. It is not shown in the detail), in order to transmit the electrical signal, the body of the probe 由 is insulated by the 峨 wheel (10), and the _13 material is covered by the lobes and amps, to ensure the transfer of the face 43 And the probe, read solder joint 441, is electrically connected to circuit board 44. 201111796 - Although the probe card of the above-mentioned conventional technology can effectively prevent external interference, improve the probe signal transmission speed, and reduce the insertion loss (Insertion L〇ss) and return loss (Return Loss), the probe 41 of the probe card is There is still a bare portion* of about 2 mm near the probe tip 411, and the high frequency signal of up to several GHz to several hundred GHz causes a problem that the impedance is not easily matched. The 5 Ω impedance is the target value for impedance matching. The actual impedance may be as high as 80 Ω, which greatly degrades the signal quality and does not even allow the tester to obtain a measurable signal. Therefore, there is a need for a structure which can reduce the exposed φ portion of the probe and has a coaxial-like line to improve the variation range of the high-frequency impedance and thereby achieve impedance matching. & [Summary of the Invention] - The main purpose of the present invention is to provide a high-count f-type probe structure for sending high-frequency input money to _", and transmitting the high-frequency output number of the secret 戦W for supply Measured 'and the high-rise arm probe lion includes at least - probe coating, low-k dielectric material and grounding conductive layer, which is a probe that is air, epoxy around the probe Between the conductors, the probe guide = the first insulating material 'provides better dielectric conduction medium, the low dielectric close to the probe conductor, the low medium-density gold I bar material ί : epoxy lining, the electrical layer The secret cover of the financial power is completely covered by the conductive layer _ formation similar to the stack structure of the Wei board, decorated with 贱 (four) moving range, improve the impedance matching problem, improve the accuracy of the high-frequency signal measurement by the large-slip 1 of the ring-shaped wheel H. MODE FOR CARRYING OUT THE INVENTION The embodiments of the present invention will be described in more detail below with reference to the drawings and the reference numerals, which can be implemented by those skilled in the art after reading this specification. Referring to the second figure, the high-frequency cantilever of the present invention Schematic diagram of the probe structure. As shown in the second figure, this The high frequency cantilever probe structure comprises at least one probe 41, an insulating coating layer 50, a low dielectric constant insulating material and a grounded conductive layer, wherein the probe 41 has a probe tip 411 and a probe conductor 412. To transmit a high-frequency electrical signal, and the two-frequency electrical signal includes a high-frequency input signal transmitted to the wafer to be tested and a high-frequency output signal for measuring the crystal moon to be tested. The insulating coating 5〇 may include air and a ring At least one of the oxyresin (around oxy) surrounds the probe conductor 412, exposing only the probe tip 411 and a small portion of the probe conductor 412 to provide electrical insulation and better signal transmission quality. The dielectric constant insulating material 6 is closely attached to the probe conductor 412, and the ground conductive layer 70 is coated with the low dielectric constant insulating material 6〇, so the probe φ conductor 412 and the low dielectric constant insulating material 6〇 and the conductive layer 70 forms a stack structure similar to a printed circuit board 'to prevent external disturbances, to ensure the quality of the transmitted high-frequency electrical signals. In addition, 'vibrating pin 4 · insulating coating 5 〇, low dielectric constant insulating material 卯 and Ground conduction 7〇 is combined into a body, so the high-frequency cantilever probe structure has a high degree of mechanical structure variability, and Keguang (4) takes advantage of the advantages of the present invention and the conventional technology in the probe card of the phase technique as described above. Referring to the third aspect, the cross-sectional view of the high-frequency collimated probe structure of the first embodiment of the present invention is low, and the thermal conductivity of the insulating material 6〇 is closely attached to the upper and lower sides of the probe conductor 412, and “邑., The enamel cladding layer 50 includes air 52 and epoxy resin 54, and the epoxy resin 54 of the insulating coating layer 5G between the adjacent probe conductors 412 2 is located at the two ends of the insulating coating layer 5G. Bonding the low dielectric constant insulating material, that is, providing a low dielectric: 6G insulating material maintains the upper and lower entanglement forces of the probe conductor 412. Epoxy resins can also be replaced by insulating ceramic grades. The ground conductive layer 7A includes a highly conductive material such as copper silver, gold, or an alloy of at least two of copper, silver, and gold. Figure. The present invention is a cross-sectional view of the high-frequency cantilever probe structure of the second embodiment. In the second embodiment, the configuration of the high-frequency cantilever probe 1 and the insulating coating 5G are different. The epoxy resin 54 of the insulating cover layer 5 of the first conductor 412 is partially filled with the probe gas 52 to be in contact with the probe conductor 412 such that the workpiece 52 of the insulating coating 50 surrounds the probe conductor. 412. Figure. Trr 'this hair (four) three real high fabric probe structure profile = Xindi Yu _ high frequency cantilever probe two embodiment _. == layer = exposed, the remaining components are the same as the first, 邑, poison package 50 only contains epoxy 54, not containing the first: :=:::412 air 52, '_ needle guide (four) two 412 . Therefore, the %% of the latex resin is exposed to the probe conductor minus, and the probe structure can make the exposed portion of the probe 41 large--so that the thief of the slave needle can be more purely matched, and the height of the probe is increased by 201111796. The transmission speed of the electrical signal, the stability of the financial side. The present invention is intended to be illustrative of the preferred embodiments of the present invention and is not intended to limit the present invention in any way. Changes are still to be included in the scope of the invention as intended. "
【圖式簡單說明】 第一圖為習用技術探針卡的示意圖。 第二圖為本發明高頻懸臂式探針結構的示意圖 第三圖為本發明第一實施例高頻懸 第四圖為本發明第二實施例高頻懸 第五圖為本發明第三實施例高頻懸 臂式探針結構的剖示圖。 臂式探針結構的剖示圖。 臂式探針結構的剖示圖。 【主要元件符號說明】 41探針 • 411探針尖端 412探針導體 413絶緣體 42導電膠 43固定環 44電路板 5〇絕緣包覆層 52空氣 201111796 54環氧樹脂 60低介電係數絕緣材料 70接地導電層[Simple description of the diagram] The first figure is a schematic diagram of a conventional technology probe card. 2 is a schematic view showing a structure of a high-frequency cantilever probe according to a first embodiment of the present invention; a fourth embodiment of a high-frequency suspension according to a second embodiment of the present invention; A cross-sectional view of a high frequency cantilever probe structure. A cross-sectional view of the arm probe structure. A cross-sectional view of the arm probe structure. [Main component symbol description] 41 probe • 411 probe tip 412 probe conductor 413 insulator 42 conductive adhesive 43 fixing ring 44 circuit board 5 〇 insulation coating 52 air 201111796 54 epoxy resin 60 low dielectric constant insulation material 70 grounding conductive layer