TW201037851A - Method and apparatus for irradiating a photovoltaic material surface by laser energy - Google Patents
Method and apparatus for irradiating a photovoltaic material surface by laser energy Download PDFInfo
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- TW201037851A TW201037851A TW098145166A TW98145166A TW201037851A TW 201037851 A TW201037851 A TW 201037851A TW 098145166 A TW098145166 A TW 098145166A TW 98145166 A TW98145166 A TW 98145166A TW 201037851 A TW201037851 A TW 201037851A
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1872—Recrystallisation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Description
201037851 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種藉由一雷射照射一光伏打材料表面的 方法。 【先前技術】 * 已發展一種由於低成本且因此商業上可能為由結晶半導 體所製造之習知光伏打電池之重要替代物的所謂薄膜 「thln fllm」光伏打（TF-PV)電池。相較於由塊體半導體材 〇 料製造的習知光伏打電池，此等TF-PV電池通常需要少於 約兩個數量級之半導體材料以用於其等之製造。 TF-PV電池包括多種不同的電池設計，例如微晶矽
Sl:H)pV電池，非晶矽/微晶矽（a-Si:H/MX_Si:H)pv電池及 CIGS(銅銦鎵硒）pv電池。 一 TF-PV電池的主要元件係由玻璃或其他適當可撓性或 剛性基板上之一薄膜堆疊所組成，該TF堆疊基本上包括來 自半導體材料之—吸收體層或夾在-後電極與-前電極間 之一此類層之堆疊。 在習知矽基電池的情形中，吸收體層之結晶度（亦即原 • 子級上之材料有序度）之改變將影響電池開路電壓及光學 . °及收性二者’藉此影響該電池之最大可能能量轉換效率。 尤其對偏好包含大部分非晶矽層與微晶矽層中所形之接 面的多接面堆疊設計的先前石夕基電池而言，嚴密控制所有 層之結晶度係最佳化電池效能的關鍵。 進—步言之’ L卜處理步驟而言’通f需要後沈積 145420.doc 201037851 二L薄膜以生產所需結晶結構並用以減小膜介面處之 厂0的密度。由於該薄膜之最終組成及其結晶度二 糸至關重要且在高於特定臨限溫度下加熱時容易改變， 後沈積加熱可導致電池效能之下降。 在先則技術中嘗試解決以上問料已提出逐步改善沈積 及後沈積加熱步驟與所用處理。 '在目則取先進之技術中，矽基電池及CIGs電池二者通 常^在多腔室或單腔室真㈣⑽（電”強化學氣相沈 積）设備或多種參數諸如溫度、RF激發頻率、RF功率密 度、饋送氣體組成、蒸㈣設計#在該#整個系統設計所 採用之界限内已經協調優化之多站真空共蒸鍍設備中製 造。 就石夕基電池而言，基於諸如PECVD之已確立技術已發展 大規模複雜且昂貴的機器，並在一個或多個專屬腔室内依 序沈積連續層。亦已發展先沈積一晶種層，接著在其上實 行磊晶生長製程之變化法，雖然此等製程具類似複雜度且 通常需要比標準玻璃基板可承受之溫度更高的溫度。 進步s之’雖然多腔室系統具有下列主要優點：個別 腔室僅曝露在前軀體氣體之一類摻雜物中，藉此減小先前 摻雜層沈積步驟餘留在反應器壁及電極表面上之殘留摻雜 物所引起本質吸收體層之任何無法避免之摻雜，但其等亦 具有下列主要缺點：此等製程需要適合用於高真空腔室間 基板運輸之模組及機構，且因此通常係高成本及相對低產 出的。 145420.doc 201037851 另一尤其與多腔室工具有關之問題係在腔室間運輸期間 會曝露出高敏感薄膜介面層，使得此等層可與殘留氧反應 而引起介面性質下降或在下一沈積步驟之前使額外表面製 備步驟成為必要的。 單腔室系統在腔室之間無需真空轉移硬體之額外複雜 度，但是其等具有從一處理步驟至下一處理步驟的摻雜記
憶效應。摻雜記憶效應之避免迫使沈積製程、製造期間PV 電池亦將進行之步驟之間包含冗長的腔室清潔步驟及調節 〇 步驟。 藉由共蒸錄製程製造CIGS層亦包含類似成本及複雜 度其中而要極嚴密控制溫度、蒸鍵源噴發速率及周圍氛 圍條件以保持所需膜組成，同時亦形成良好裝置效能所需 支大柱狀晶粒^硒損失係一主要問題，因為在較高溫度下 此元件比其他組件具有明顯較高的蒸氣壓力。 進一步5之，CIGS層之後沈積加熱通常必需在經小心 ❹ +衡之富含砸周圍環境中實行而增加整個製程之複雜度、 成本及來源變動。 伙以上可清楚看出現有沈積及後沈積加熱方法二者皆係 緩慢且昂貴的，在連續沈積步驟之間需要基板實體重新定 位或需要耗時且昂貴的腔室清潔且在沈積步驟之間需要調 節操作。進一步言之’此等方法係不易控制且操作昂貴。 考慮到現有TF-PV電池製造方法的缺點，本發明之主要 目的係提供一種更簡單、更具成本效率且業内適用的方法 以利用CIGS或Si:H/ySi:H吸收體層製造订光伏打電池。 I45420.doc 201037851 . 本發明之第一目的係減小為獲得最終所需吸收體堆疊所 需之不同沈積步驟的數目。 另一目的係提供一種可產生獲改良之丁!^吸收體層以得到 較佳TF-PV電池效能的方法。 本發明之另一目的係在保持低硒損失的情況下同時減少 CIGS沈積製程之複雜度。 本發明係藉由一雷射源照射該TF_PV材料層之一表面區 而使至少該表面區之頂層的結晶度增加而符合以上目的。 【發明内容】 本發明係關於一種製造TF_PV材料的方法，該方法包 括： 提供具一定結晶度之一 TF-PV材料層；及 -藉由具照射參數之一雷射源照射該TF_pv材料層的一表 面區， 其特徵為：豸等照射參數係經選擇則吏至少㈣表面區之 一頂層的該結晶度增加。 【實施方式】 熟悉此項技術者將明白下文所述之諸實施例僅係根據本 發明進行說明且不限制本發明之預定範圍。亦可考慮其他 實施例。 根據本發明之第—實施例，提供_種製造TF_pv材料的 方法，該方法包括： -提供具一定結晶度的一 TF_PX^4料層；及 -藉由具照射參數之一雷射源照射該TF_pv材料層的—表 145420.doc 201037851 面區， 其特徵為：該等照射參數係經選擇以使至少在該表面區之 一頂層的結晶度增加。 根據本發明’藉由雷射照射照射TF.PV電池結構之不同 部分之短期局部加熱可用於選擇性調整沈積薄膜之物理、 先學及電子性質，並藉此改良該等電池之總效能。特定言 之’可使存在於該等膜之不同部分中的結晶，多晶或非晶 結構改變。 ❹ Ο 雷射照射引起待處理薄膜之-部分極度局部不均句加 ‘、，、可將及薄膜之表面區及近表面區加熱至高於溶化溫度 之溫度，同時該膜之實質部分保持在該熔化溫度以下。在 所誘發的其他熱效應中，結晶結構係獲調整。此調整可視 照射參數及TF-PV材料下方基板之起始條件而主要限於溶 化區或可延伸至不炫區。 根據本發明，照射步驟可涉及部分完成TF-PV層之曝光 以調整其整個頂層，亦即其等厚度部分之結構。可實行此 整個頂層之調整，以使具有一定結晶度之先前均質層轉變 成至夕—頂層，獲得較高結晶度之兩層或更多可區分層。 此意味著較少層需經由以上概述之習知方法沈積，而使此 成本較低及機器輸出較高。因此節省的成本及時 間在因不同類型之膜可達到之不同沈積速率之特定常見情 形中係尤為重要。舉例而言，可以比具相同厚度之微晶層 更高速率（即較少時間）沈積—高度非晶⑽層。該非晶層 之至少-頂部後續轉變成心邮因此可表示沈積製程中 145420.doc 201037851 明顯的成本節省及時間節省。 在本發明之—實施例中，雷射源可為波長、能量及脈衝 時間係適用於製程之任何雷射，較佳為一準分子雷射且甚 至更較佳為一氣化氙準分子雷射。 雷射源較佳可以近uv’更佳係具3〇8 nm之波長者照 射々。由於所選波長之強吸收性及處理之短持續時間，可對 该等膜實行高溫處理，同時避免明顯加熱下方基板。 雷射照射可為脈衝雷射照射，較佳地具有0.2 J/Cm2至3 之二中胃b量孩、度及1焦耳至5〇焦耳之傳遞脈衝能量。 呵月b里田射之使用容許以各雷射脈衝處理大區域。 脈衝持續時間可於5〇奈秒與25〇奈秒之間。 雷射源了加冗具1 〇 mm至1 瓜爪之主要線性尺寸及 〇_〇5 mm至1〇〇 mm之次要線性尺寸之材料表面的矩形區。 在根據本發明之一實施例中，提供一種照射參數經選擇 以使爆炸再結晶發生的方法。 在本發明内文中，爆炸再結晶係一移動的熔體波前 front)朝下方材料傳播的再結晶。爆炸再結晶發生在炫融 材料從照射區表面之一次溶體開始固化成結晶材料時。由 此固化所釋放之潛熱熔化覆蓋材料薄層。在此二次熔體之 再結晶期間，再次釋放出潛熱並因此一薄液態材料層從最 初液固態介面朝下方材料傳播。 在根據本發明在一較佳實施例中，提供一種表面區頂層 之深度大於照射吸收深度及非爆炸熔化波前深度二者的方 法。利用爆炸再結晶效應以在處理層中遠超過光學吸收深 145420.doc 201037851 度及一次熔化波前深度二者之深度處達到部分再結晶。由 於可以實質上比微晶矽更高的速率（較佳係至少快一數量 級）進行（例如）非晶矽之沈積製程，此從單一層形成一組合 微晶/非晶雙層之技術允許明顯節省沈積製程之成本及時 間。 在本發明之一較佳實施例中，TF-PV材料層係由包括 界定表面區頂層深度之終止層組成。該終止層應具有一比 待再結晶層之熔化焓更高的熔化焓，其意味該終止層可具 有儘所需地高之結晶度（較佳係65%至9〇%)之大部分相同
的組成以提供爆炸再結晶波前可靠的淬火，或例如藉由增 添摻雜物、0、Ν、金屬等而具有另—組成，#此提心 熔化熱。該終止層可具有約5奈米至75奈米的層厚度。 利用一終止層之主要優點係可藉由在該終止層頂部上更 快沈積一非晶層並使其再結晶而避免-厚微晶層之慢沈 積0 TF-PV材料層之照射步驟可在周圍氛圍中實行，但在本 發明之—替換實施例中，該方法可另外包括在照射之前於 該TF-PV材料層之表面區上提供諸如s〇g(旋塗玻璃）之囊 :層。由於不同材料之不同吸收特徵’可在以囊封材料覆 蓋特定層時達到選擇性加熱該等層。 該⑷囊封層之存在係用於減小下方層之較易揮發成分 (亦即砸）的損失並可有效延伸下方結構之加熱時間，同時 亦減小所曝露之峰值溫度。 其他囊封層可提供—熱儲庫以比脈衝持續時間本身更長 145420.doc 201037851 所處溫度更低之峰值溫度下傳導加 的期限在比該等表面層 熱下方層。 進一步言之，其可用作為增強雷射能量與所照較-PV 層間之耦合的光學元件。 TF-PV電池之製造係基於一系 亍力之，尤積步驟及圖案化步 驟，其通常至少包含以下步驟： 該丁謂材料層可為任何適用於薄膜光伏打應用之材 料，諸如（但不限於）未摻㈣、摻雜⑪、植人石夕、結晶 石夕、非晶石夕、石夕錯、氮化鍺，諸如氮化鎵、碳化石夕及類似 物之III-V族化合物光伏打材料。 根據本發明方法可用於製造TF光伏打材料或裝置，諸如 (但不限於）矽基TF_PV電池及CIGS電池。 可將S亥方法如說明般應用在若干實例中： 實例1 : a) 沈積包括至少一非晶矽層的—TF吸收體膜；其後接著 b) 使該非晶#層部分再結晶以產生具不同非晶⑦層/微晶 層之堆疊，藉此在遠超過照射吸收深度之深度將該爆炸再 結晶效應用於達到再結晶。 實例2 : a) 在包括至少一非晶矽層之TF吸收體層上施覆一 tc〇(透 明導電）層（例如賤鑛ZnO);其後接著 b) 使該非晶矽層部分再結晶以產生具不同非晶矽層/微晶 層之堆疊’藉此在遠超過照射吸收深度及非爆炸炼化波前 深度之深度將該爆炸再結晶效應用於達到再結晶；同時 145420.doc •10- 201037851 C)在照射步驟期間同時加熱覆蓋TCO層以改良該TCO膜之 光學特徵及電學特徵並增強（亦即減小）TCO半導體接觸件 之電阻。 • 實例3 : ·> a) 在一共蒸鍍CIGS結構頂部上化學浴沈積一 CdS(硫化鎘） ^ 緩衝器，其後接著施覆一 SOG囊封層； b) 雷射照射使該CdS層之結晶度獲改良且有利於使該CIGS 層退火而不損失硒；其後接著 ^ c)選擇性移除該SOG層。 實例4 : 一習知PECVD沈積次序如下： - 沈積pA/n 3層300 nm非晶堆疊；其後接著 - 沈積具45-75%結晶度之p/i/n 3層2微米微晶堆疊其係根 據本發明被以下次序所取代： - 沈積pA/n 3層300 nm非晶堆疊；其後接著 ^ - 沈積具65-90%結晶度之50 nm微晶終止層；其後接著 - 沈積具0-50%結晶度之2微米非晶層；其後接著 - 再結晶2微米非晶矽層。 , 可以一 p/i/n堆疊形式，或者以一 p/i堆疊形式快速沈積該 2微米非晶矽層，接著以將引起爆炸再結晶之相同雷射退 火η掺雜之。 145420.doc • 11 -
Claims (1)
- 201037851 七、申請專利範圍： 1. 一種製造TF-PV材料的方法，該方法包括： 提供具—定結晶度之TF-PV材料層；及 ;2由—具照射參數之雷射源照射謂心材料層之表 =徵為：該等照射參數係經選擇錢至少在該表面 &之頂層的結晶度增加。 〇 2·如請求項1之方法’其t該雷射源以近UV照射。 3’如β求項之方法’其中該等照射參數係經選擇使 發生爆炸再結晶。 4·如：求項3之方法，其中該頂層之深度係大於該照射吸 收深度及非爆炸熔化波前深度二者。 5. 如請求項…之方法’其另外包括在照射之前在該 pv材料層之該表面區上提供一密封層。 6. ^請求項丨至5之方法，其中該”邛¥材料層係由包括界 〇 定該頂層深度之終止層的層堆疊所組成。 1 7. —種如前述請求項中任一項之方法在製造ciGs電池 用途。 之 145420.doc 201037851 四、指定代表圖·· (一) 本案指定代表圖為：（無） (二) 本代表圖之元件符號簡單說明： 五、本案若有化學式時，請揭示最能顯示發明特徵的化學式： (無） 145420.doc
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| US8551802B2 (en) * | 2011-09-12 | 2013-10-08 | Intermolecular, Inc. | Laser annealing for thin film solar cells |
| EP2677551A1 (en) * | 2012-06-21 | 2013-12-25 | Excico Group | Method for manufacturing a photovoltaic device using laser irradiation. |
| US10267112B2 (en) | 2016-11-04 | 2019-04-23 | Baker Hughes, A Ge Company, Llc | Debris bridge monitoring and removal for uphole milling system |
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|---|---|---|---|---|
| US4751193A (en) * | 1986-10-09 | 1988-06-14 | Q-Dot, Inc. | Method of making SOI recrystallized layers by short spatially uniform light pulses |
| US5714404A (en) * | 1993-11-18 | 1998-02-03 | Regents Of The University Of California | Fabrication of polycrystalline thin films by pulsed laser processing |
| AUPM982294A0 (en) * | 1994-12-02 | 1995-01-05 | Pacific Solar Pty Limited | Method of manufacturing a multilayer solar cell |
| CN1089486C (zh) * | 1995-06-26 | 2002-08-21 | 精工爱普生株式会社 | 形成晶体性半导体膜的方法 |
| JP2001028453A (ja) * | 1999-07-14 | 2001-01-30 | Canon Inc | 光起電力素子及びその製造方法、建築材料並びに発電装置 |
| JP2002009318A (ja) * | 2000-06-26 | 2002-01-11 | Toyota Central Res & Dev Lab Inc | 薄膜シリコン太陽電池及びその製造方法 |
| DE10042733A1 (de) * | 2000-08-31 | 2002-03-28 | Inst Physikalische Hochtech Ev | Multikristalline laserkristallisierte Silicium-Dünnschicht-Solarzelle auf transparentem Substrat |
| US6777317B2 (en) * | 2001-08-29 | 2004-08-17 | Ultratech Stepper, Inc. | Method for semiconductor gate doping |
| JP2004006487A (ja) * | 2002-05-31 | 2004-01-08 | Sharp Corp | 結晶質薄膜の形成方法、結晶質薄膜の製造装置、薄膜トランジスタ、および光電変換素子 |
| JP2005064014A (ja) * | 2003-08-11 | 2005-03-10 | Sharp Corp | 薄膜結晶太陽電池およびその製造方法 |
| US20050101160A1 (en) * | 2003-11-12 | 2005-05-12 | Diwakar Garg | Silicon thin film transistors and solar cells on plastic substrates |
| SE527733C2 (sv) * | 2004-10-08 | 2006-05-23 | Midsummer Ab | Anordning och metod för att tillverka solceller |
| JP4169071B2 (ja) * | 2006-05-25 | 2008-10-22 | ソニー株式会社 | 表示装置 |
| DE102007023697A1 (de) * | 2006-05-25 | 2007-12-06 | Honda Motor Co., Ltd. | Chalkopyrit-Solarzelle und Verfahren zu deren Herstellung |
| JP4439492B2 (ja) * | 2006-05-25 | 2010-03-24 | 本田技研工業株式会社 | カルコパイライト型太陽電池およびその製造方法 |
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2009
- 2009-02-12 EP EP09305133A patent/EP2219231A1/en not_active Withdrawn
- 2009-12-21 JP JP2011549441A patent/JP2012517706A/ja active Pending
- 2009-12-21 CN CN200980157843XA patent/CN102598309A/zh active Pending
- 2009-12-21 EP EP09808989A patent/EP2396831A2/en not_active Withdrawn
- 2009-12-21 WO PCT/EP2009/009179 patent/WO2010091711A2/en active Application Filing
- 2009-12-21 KR KR1020117021081A patent/KR20120018110A/ko not_active Application Discontinuation
- 2009-12-21 US US13/148,865 patent/US20120040486A1/en not_active Abandoned
- 2009-12-25 TW TW098145166A patent/TW201037851A/zh unknown
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|---|---|
| WO2010091711A3 (en) | 2012-04-26 |
| EP2396831A2 (en) | 2011-12-21 |
| JP2012517706A (ja) | 2012-08-02 |
| US20120040486A1 (en) | 2012-02-16 |
| KR20120018110A (ko) | 2012-02-29 |
| EP2219231A1 (en) | 2010-08-18 |
| WO2010091711A2 (en) | 2010-08-19 |
| CN102598309A (zh) | 2012-07-18 |
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