TW201035697A - Proximity exposure device, substrate positioning method therefor, and produciton method of substrate for display - Google Patents

Proximity exposure device, substrate positioning method therefor, and produciton method of substrate for display Download PDF

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Publication number
TW201035697A
TW201035697A TW099107138A TW99107138A TW201035697A TW 201035697 A TW201035697 A TW 201035697A TW 099107138 A TW099107138 A TW 099107138A TW 99107138 A TW99107138 A TW 99107138A TW 201035697 A TW201035697 A TW 201035697A
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Taiwan
Prior art keywords
laser
platform
substrate
chuck
proximity exposure
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TW099107138A
Other languages
Chinese (zh)
Inventor
Junichi Mori
Katsuaki Matsuyama
Hiroshi Hikawa
Yasuhiko Hara
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Hitachi High Tech Corp
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Publication of TW201035697A publication Critical patent/TW201035697A/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • G03F7/70725Stages control
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/70025Production of exposure light, i.e. light sources by lasers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/707Chucks, e.g. chucking or un-chucking operations or structural details
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70758Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A substrate positioning method for a proximity exposure device is provided, wherein the method utilizes several laser displacement meters to precisely detect the inclination of a chuck in a θ direction, so as to precisely position a substrate in the θ direction. A movement system moving and carrying chucks thereon includes: a first stage moving towards an X direction; a second stage carried on the first stage and moving towards the Y direction; and a third stage carried on the second stage and rotating towards the θ direction. Several laser displacement meters are installed on the second stage and moved towards an XY direction together with the chucks and the displacements of the chucks are measured at several positions by the several laser displacement meters. The inclination of the chucks in the θ direction is detected according to the measurement result, and based on the detection result, the chucks are rotated towards the θ direction by means of the third stage, so as to precisely position a substrate in the θ direction.

Description

201035697 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種在製造液晶顯示裝置等的顯示用 面板(panel)基板時,進行基板的曝光之曝光裝置、曝光 方法以及使用所述曝光裝置和曝光方法的顯示用面板基板 的製造方法,本發明尤其涉及通過移動平臺而將支持基板 的夾盤(chuck)向XY方向移動以及向Θ方向旋轉,以進 行曝光時的基板的定位的曝光裝置、曝光方法以及使用所 ® 述曝光裝置和曝光方法的顯示用面板基板的製造方法。 【先前技術】 用作顯示用面板的液晶顯示裝置的薄膜電晶體(Thin Film Transistor’ TFT)基板或彩色滤光器(c〇i〇r创如)基 板、電漿顯示面板(plasma display panel)用基板、有機電 致發光(Electroluminescence,EL)顯示面板用基板等的 製造,是使用曝光裝置,並通過微影(ph〇t〇lith〇graphy:) 技術在基板上形成圖案(pattern)而進行。作為曝光裝置, 〇 有使用透鏡Uens)或鏡面來將遮罩(mask)的圖案投影 到基板上的投影(projecti〇n)方式;以及在遮罩和基板之 間設置微小的間隙(接近縫隙(proximity gap)),以將 遮罩的圖案轉印到基板上的接近方式。接近方式與投影方 式相比’圖案析象性能較差,但照射光學系統的構成簡單, 且處理能力較高,適合於量產用。 製,光裝置中,為了精度良好地進行圖案的燒 衣韻度良好地進行曝光時的基板的定位。進行基板 201035697 的疋位的移動平臺具備向x方向移動的X平臺、向γ方 =動的γ平臺以及向θ方向旋轉的0平臺且搭載著支 3板的缝而向χγ方向移動以及向θ方向旋轉。在日 開娜29嶋號公報中揭示了如下技術·使用 f射測長系統來檢測移動平臺在灯方向上的位置,並且 使用多個雷射位移計來檢測央盤在θ方向上的斜度。 如日本專利制2GG8_29麵號公報所記載般,在使 用夕個雷射位移計來檢測夾盤在θ方向 位移計設置得更隔開,越能精== 直斜度。⑼,雷射位移計的輸㈣性缺乏 利姓’讀大》収翻,_定縣將變大。在日本專 =開2__29藝號公報所記载的技術中由於是在χ 室上设置多個雷射位移計來檢測夾盤在θ方向上的斜 :移因二IT ¥平室而將夾盤向Υ方向移動時,由雷射 測疋的夾盤的位移會因夹盤朝向γ方向的移動而 貝因Λ如果將多個雷射位移計設置得更隔開, ^射位移計的測定範圍擴大,從而發生測定誤差變大的 「〇]喊。 【發明内容】 ^明的課題在於使用多個雷射位移計來精度良好地 =夾盤在θ方向上的斜度’以精度良好地進行基板在θ 。Γ,本發明的課題在於精度良好地進行 圖案的燒製,以製造高品質的顯示用面板基板。 本發明的接近式曝光裝置,包括支持基板的夾盤以及 201035697 保持遮罩的遮罩架,且在遮罩和基板之間設置微小的縫 隙,以將遮罩的圖案轉印到基板上,此接近式曝光裝置包 括:移動平臺,具有向X方向(或γ方向)移動的第i 平臺、搭載在第1平臺上並向γ方向(或X方向)移動的 第2平臺、以及搭載在第2平臺上並向θ方向旋轉的第3 平臺,且該移動平臺搭载夾盤,以進行由夾盤所支持的基 板的定位個f射位料,設置在第2平臺上,與央盤 -_χγ方向移動’在纽収爽_位移;第^、檢測 機構,根據多個雷射位移計的測定結果,而檢測夾盤θ 方向上的斜度;平臺驅動電路,驅動該移動平臺;以及控 制裝置,根據第1檢測機構的檢測結果來控制該平臺驅動 電路,並通過第3平臺來使夾盤向θ方向旋轉,以進行基 板在Θ方向上的定位。 而且,本發明的接近式曝光裝置的基板定位方法是如 下的接近式曝光裝置的基板定位方法,此接&式曝光裝置 包括支持基板的夾盤以及保持遮罩的遮罩架,且在遮罩和 〇 基板之間設置微小的縫隙,以將遮罩的圖案轉印到基板 上,此接近式曝光裝置的基板定位方法中,在移動平臺上 搭載夾盤,該移動平臺具有向X方向(或γ方向)移動的 弟1平臺、搭載在第1平臺上並向Υ方向(或χ方向)移 動的第2平臺、以及搭載在第2平臺上並向θ方向旋轉的 第3平臺’在第2平臺上設置多個雷射位移計,將多個雷 射位移計與夾盤一同向ΧΥ方向移動,通過多個雷射位移 計而在多處測定夾盤的位移’根據測定結果來檢測夾盤在 201035697 θ方向上的斜度’根據檢騎果,通過第3平臺而將爽盤 向θ方向旋轉,以進行基板在θ方向上的定位。 ,第2平臺上設置乡麵餘料,將多 :„同向灯方向移動,通過多個雷射位移計而在 夕处測疋夾盤的位移,因此由各雷射位移計所測定的爽盤 ^位移不會因趋的移動而發生變動。即使夾盤向ΧΥ方 =動’雷射位移計的測絲圍也不會擴大,因此可將多 設置得更隔開。因此,可精度良好地檢測夾 肖上的斜度’且精度良好地進行基板在θ方向上 的疋位。 進而,本發明的接近式曝光裝置,包括:雷射測長系 t具有產生前的光源、安裝在第1平臺上的第i反射 第2平臺上的第2反射機構、對來自光源的 涉儀、以及在多處對來自光源的雷射與由第= 構所反射的雷射的干涉進行測定的多個第2雷射干涉 墓以及第2檢測機構,根據雷射測長系統的 多個第2雷射干涉儀的測定結果,而檢測移 檢、、的位置’ i ’控制裝置根據第2檢測機構的 二'、、。果來控制平臺驅動電路’並通過第1平臺及第2平 2使夾盤向χγ方向移動,以進行基板在χγ方向上的 塗! 2 ’本發明的接近式曝光裝置的基板定位方法是在 W臺上安裝第1反射機構’在第2平臺上安裝第2反 201035697 而對來自光源的雷射與由 第1反射機,所反射的雷射的干涉進行測定,通過多個第 2機在多處對來自域的雷射與由第2反射 干涉進行測定’並根據測定結果來檢 ;、'、,s方向上的位置’根據檢測結果 ,通過第 ^平室及P平臺而將錄向χγ方向鋪,以進行基板 的定位。使用雷射測長系統而精度良好地檢 ❹[Technical Field] The present invention relates to an exposure apparatus, an exposure method, and an exposure method for performing exposure of a substrate when manufacturing a panel substrate for a liquid crystal display device or the like The present invention relates to a method of manufacturing a panel substrate for display of an apparatus and an exposure method, and more particularly to an exposure of a chuck of a support substrate by moving the platform in the XY direction and rotating in the Θ direction to perform positioning of the substrate during exposure. A device, an exposure method, and a method of manufacturing a panel substrate for display using the exposure apparatus and the exposure method. [Prior Art] A Thin Film Transistor 'TFT substrate or a color filter (plasma display panel) or a plasma display panel used as a liquid crystal display device for a display panel The production of a substrate, an organic electroluminescence (EL) display panel substrate, or the like is performed by using an exposure apparatus and forming a pattern on a substrate by a lithography technique. . As an exposure device, there is a projection method in which a lens Uens or a mirror is used to project a pattern of a mask onto a substrate; and a small gap (close to the gap) is provided between the mask and the substrate ( Proximity gap)), an approach to transfer the pattern of the mask onto the substrate. The approaching method is inferior to the projection method. The patterning performance of the illumination optical system is simple, and the processing capability is high, which is suitable for mass production. In the optical device, the positioning of the substrate during exposure is performed in order to accurately perform the burnt of the pattern with high precision. The moving platform that performs the clamping of the substrate 201035697 includes an X stage that moves in the x direction, a γ stage that moves to the γ side, and a 0 platform that rotates in the θ direction, and the slits of the three plates are mounted to move in the χγ direction and to the θ direction. Direction rotation. The technique of detecting the position of the mobile platform in the direction of the lamp using a f-length measuring system is disclosed in the Japanese Patent Publication No. 29 公报, and the inclination of the central disk in the θ direction is detected using a plurality of laser displacement meters. . As described in Japanese Patent Laid-Open No. 2 GG8_29 No., the use of a laser displacement gauge to detect the chuck is set to be more spaced in the θ direction, and the more precise == straight slope. (9), the loss of the laser displacement meter (four) lack of profit, the name of the "read big" closed, _ Ding County will become larger. In the technique described in Japanese Patent Application No. 2__29 Art No., a plurality of laser displacement meters are provided on the chamber to detect the inclination of the chuck in the θ direction: the chuck is moved by the two IT ¥ flat chambers. When moving in the direction of the Υ, the displacement of the chuck measured by the laser will be due to the movement of the chuck toward the γ direction. If the multiple laser displacement meters are set more spaced, the measurement range of the displacement meter When the measurement is increased, the measurement error is increased. [Explanation] The problem is that the accuracy of the chuck is in the θ direction using a plurality of laser displacement meters accurately. The substrate is in θ. The object of the present invention is to accurately burn a pattern to produce a high-quality display panel substrate. The proximity exposure apparatus of the present invention includes a chuck for supporting a substrate and 201035697 to maintain a mask. a mask frame, and a micro slit is provided between the mask and the substrate to transfer the pattern of the mask onto the substrate, the proximity exposure device comprising: a moving platform having a movement in the X direction (or the γ direction) The i-th platform, equipped with a second platform that moves in the γ direction (or the X direction) on the platform, and a third platform that is mounted on the second platform and rotates in the θ direction, and the moving platform is equipped with a chuck for support by the chuck The position of the substrate is set on the second platform, and is moved on the second platform, and moves in the direction of the central disk - _ χ γ in the 纽 _ _ displacement; the ^, the detection mechanism, according to the measurement results of the plurality of laser displacement meters, Detecting a slope in the direction of the chuck θ; a platform driving circuit that drives the moving platform; and a control device that controls the platform driving circuit according to the detection result of the first detecting mechanism, and drives the chuck to the θ direction through the third platform Rotating to perform positioning of the substrate in the x-direction. Moreover, the substrate positioning method of the proximity exposure apparatus of the present invention is a substrate positioning method of a proximity exposure apparatus including a chuck supporting a substrate And a mask holder that maintains the mask, and a small gap is formed between the mask and the substrate to transfer the pattern of the mask onto the substrate. In the substrate positioning method of the proximity exposure apparatus, A chuck is mounted on the mobile platform, and the mobile platform has a platform 1 that moves in the X direction (or the γ direction), a second platform that is mounted on the first platform and moves in the x direction (or the χ direction), and is mounted on the mobile platform. A third platform that rotates in the θ direction on the second platform is provided with a plurality of laser displacement meters on the second platform, and the plurality of laser displacement meters are moved in the ΧΥ direction together with the chuck, and the plurality of laser displacement meters are passed. The displacement of the chuck is measured at a plurality of locations. 'The slope of the chuck in the direction of 201035697 θ is detected according to the measurement result'. According to the test ride, the plate is rotated in the θ direction by the third platform to perform the substrate in the θ direction. Positioning on the second platform. On the 2nd platform, the noodle surplus material will be set up. It will move more: „the direction of the same direction light, and the displacement of the chuck will be measured at the eve by multiple laser displacement meters. Therefore, each laser displacement meter The measured displacement of the plate does not change due to the tendency to move. Even if the chuck is turned toward the side of the arm = the laser gauge of the laser displacement meter will not expand, so it can be set more spaced. Therefore, it is possible to accurately detect the inclination on the clip and accurately perform the clamping of the substrate in the θ direction. Further, the proximity exposure apparatus of the present invention includes the laser length measuring system t having a light source before generation, a second reflection mechanism mounted on the i-th reflection second stage on the first stage, and a light source And a plurality of second laser interference tombs and a second detecting mechanism that measure the interference between the laser beam from the light source and the laser reflected by the first structure at a plurality of locations, according to the plurality of laser length measuring systems 2 The measurement result of the laser interferometer, and the position 'i' control device for detecting the transfer inspection is based on the second '',> of the second detection mechanism. The platform drive circuit is controlled to move the chuck in the χγ direction by the first stage and the second plate 2 to apply the substrate in the χγ direction! 2 'The substrate positioning method of the proximity exposure apparatus of the present invention is that the first reflection mechanism is attached to the W stage. The second reverse 201035697 is attached to the second stage, and the laser beam from the light source is reflected by the first reflector. The interference of the laser is measured, and the laser from the domain and the second reflection interference are measured by a plurality of second machines at a plurality of locations and are detected according to the measurement result; and the position in the s direction is based on As a result of the detection, the recording is performed in the direction of χγ by the first chamber and the P platform to perform positioning of the substrate. Accurate inspection using a laser length measurement system

,移動平臺在ΧΥ方向上的位置,碎度良好地進行基板 方向上的定位。而且,可根據多個第2雷射干涉儀 的測疋結果而檢測移動平臺向χγ方向移動時的平擺 C yawing )。 進而,本發明的接近式曝光裝置包括安裝在爽盤上的 f 3反射機構’且,雷射測長系統通過多個第2雷射干涉 •而在多處對來自光源的雷射與由第3反射機構所反射 =射的干涉進行収,第2檢峨構根射射測長系統 势夕個第2 f射干涉儀的啦結果,來制夾盤的位移, 1檢測機構根據第2檢測機構所檢測出的夾盤的位移和 多個雷射位料的測定結果’來製作衫個雷射位移計的 ,定結果騎修正的修正式,通過製作成的修正式來對多 =雷射位料的測定結果進行修正,並根據修正後的多個 雷射位移計的败結果,來檢财盤在Θ方向上的斜度。 杰般而ί,本發明的接近式曝光裝置的基板定位方法是在 盤上安裝第3反射機構,通過多個第2雷射干涉儀,而 在多處對來自光源的雷射與由第3反射機構所反射的雷射 201035697 雷果來檢測夾盤的位移,根據 式來對多個雷射位移修正式’通過製作成的修正 的多個雷射位移計的進行修正,根據修正後 的测疋、,、°果,來檢測夾盤在θ方向上的 射位移計的測定結果進行修正的修正式 且 、 “ ’測長系統而精度良好地檢測夾盤的位移, 精度良好地修正雷射位移計的測定結果。 本發明的顯示用面板基板的製造方法是使用上述的任 一種接近式曝絲置來進行基板的曝光,或者制上述的 任-種接近式曝光裝置的基板定位方法來對基板進行定 位’以進行基板的曝光。由於可精度良好地進行曝光時的 基板的定位,因此可精度良好地進行圖案的燒製,從而製 造高品質的顯示用面板基板。 【發明的效果】 根據本發明的接近式曝光裝置以及接近式曝光裝置的 基板定位方法,在移動平臺上搭載夾盤,該移動平臺具有 向X方向(或γ方向)移動的第!平臺、搭載在第i平臺 上並向Y方向(或X方向)移動的第2平臺、以及搭載在 第2平臺上並向θ方向旋轉的第3平臺,且在第2平臺上 設置多個雷射位移計,將多個雷射位移計與夾盤一同向 XY方向移動,通過多個雷射位移計而在多處測定爽盤的 位移,根據測定結果來檢測夾盤在Θ方向上的斜度,並根 據檢測結果’通過第3平臺而將夾盤向Θ方向旋轉,以進 201035697 行基板在θ方向上的定位,以此,可將多個雷射位移計設 置得更隔開’因此可精度良好地檢測夾盤在θ方向上的斜 度’且精度良好地進行基板在θ方向上的定位。 進而,根據本發明的接近式曝光裝置以及接近式曝光 裝置的基板定位方法,在第1平臺上安裝第1反射機構, 在第2平置上女裝苐2反射機構,通過第1雷射干涉儀, 而對來自光源的雷射與由第1反射機構所反射的雷射的干 涉進行測定,通過多個第2雷射干涉儀,而在多處對來自 光源的雷射與由第2反射機構所反射的雷射的干涉進行測 定,並根據測定結果來檢測移動平臺在ΧΥ方向上的位 置,根據檢測結果,通過第丨平臺以及第2平臺而將夾盤 向χγ方向移動’以進行基板在ΧΥ方向上的定位,以此 可精度良好地檢測移動平臺在ΧΥ方向上的位置,因此可 精度良好地進行基板在χγ方向上的定位。而且,可根據 多個第2雷射干涉儀的測定結果來檢測該移動平臺向 方向移動時的平擺。 進而,根據本發明的接近式曝光裝置以及接近式曝光 裝置的基缺財法,在錢上絲S3反射機構,通過 多個第2f射干涉儀’而在多處對來自光源的雷射與 3反射機構所反射㈣射的干涉進行測定,根據測歧果 ,檢測夹盤的位移,根據檢測結果和多個雷射位移計 定結果,製作料個f射位料的败結果進行修正的修 正式三通補作成祕正絲對多個雷射位料的測定 果進订修正,根據修正後的多個雷射位移計的測定結果,σ 11 201035697 =測失盤在θ方向上的斜度,以此,在製作對雷射位移 結果進行修正的修正式時,可使用雷射測長系統 而精度良好地檢職盤的位移,且可精度良好地修正雷射 ,移計的測定結果。因此’可進—步精歧好地檢測爽盤 ❹方向上的斜度,且進—步精度&好地進行基板在 向上的定位。 根據本發明的顯示用面板基板的製造方法,可精度良 好地進行曝光時的基板蚊位,因此可精度良好地進行圖 案的燒製,從而可製造高品質的顯示用面板基板。 *為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂,下文特舉較佳實施例,並配合所附圖式,作詳細說 明如下。 、° 【實施方式】 圖1是表示本發明一實施形態的接近式曝光裝置的概 略構成的圖。而且,圖2是本發明一實施形態的接近式曝 光裝置的正面圖,圖3是本發明一實施形態的接近式曝光 裝置的侧面圖。本實施形態表示使用兩個移動平臺的接近 式曝光裝置的示例。接近式曝光裝置包括夾盤(chuck) l〇a、l〇b ;基座(base) 11 ;台 12 ; X 引導器(gUider) 13 ;移動平臺;遮罩架(mask holder) 20 ;雷射測長系統 控制裝置30 ;雷射測長系統;雷射位移計控制裝置;雷 射位移計 42、43、44 ;棒鏡(bar mirror) 45、46、47 ;主 控制裝置70 ;輸入輸出介面(interface)電路71、72 ;以 及平臺驅動電路80a、80b而構成。此外,圖2以及圖3 12 201035697 中’省略了雷射測長系統控制裝置30,雷射測長系統的雷 射源31 ’雷射位移計控制裝置40,主控制裝置70,輸入 輸出介面電路71、72以及平臺驅動電路80a、80b。接近 式曝光裝置除了這些部分以外,還包括照射曝光用光的照 射光學系統、基板搬送機器人以及進行裝置内的溫度管理 的溫度控制單元等。 此外’以下說明的實施形態中的χγ方向僅為例示, 亦可將X方向與γ方向對調。 在圖1以及圖2中,夾盤l〇a位於進行基板1的曝光 的曝光位置,夾盤l〇b位於進行基板1的加載/卸載的加載 /卸載位置。針對夾盤10a的加載/卸載位置位於曝光位置 的圖式左側。夾盤l〇a、l〇b通過下述的各移動平臺,從各 加載/卸載位置向曝光位置交替地移動。在各加載/卸載位 置上,通過未圖示的各基板搬送機器人,將基板丨搬入到 夾盤10a、10b上,而且從夾盤i〇a、10b搬出基板i。夾 盤10a、l〇b真空吸附地支持基板i。 在曝光位置的上空,設置著保持遮罩2的遮罩架2〇。 遮罩架20真空吸附地保持遮罩2的周邊部。在遮罩架2〇 上所保持的遮罩2的上空,配置著未圖示的照射光學系 統。曝光時,來自照射光學系統的曝光用光透過遮罩2而 向基板1照射,以此將遮罩2的圖案轉印到基板丨的表面 上,從而在基板1上形成圖案。 在圖2中,夾盤10a、10b分別搭載在移動平臺上。各 移動平臺包括X平臺14、Y引導器ΐ5、γ平臺16、0平 13 201035697 臺π以及夾盤支持台19而構成。χ π上所設的X引導器13上,沿著 == 移動。γ平臺守° 13向X方向 亡,沿著; 向θ方_。夾_台19在多處支持夾 向 =旋轉’而進行夹盤一b上所搭載的基板::The position of the mobile platform in the ΧΥ direction is well positioned in the direction of the substrate. Further, the sway C yawing when the moving platform moves in the χ γ direction can be detected based on the measurement results of the plurality of second laser interferometers. Further, the proximity exposure apparatus of the present invention includes an f 3 reflection mechanism mounted on a sizzle, and the laser length measurement system passes the plurality of second laser interferences and at a plurality of locations, the laser from the light source and the 3 reflection by the reflection mechanism = interference of the radiation, and the second inspection of the root length of the radiation measurement system, the result of the second f-ray interferometer, to produce the displacement of the chuck, 1 detection mechanism according to the second detection The displacement of the chuck detected by the mechanism and the measurement result of the plurality of laser materials are used to make a laser displacement gauge of the shirt, and the correction formula of the result of the riding correction is made by the correction formula produced by the multi-laser The measurement result of the bit material is corrected, and the slope of the disk in the x direction is checked according to the result of the correction of the plurality of laser displacement meters after the correction. The substrate positioning method of the proximity exposure apparatus of the present invention is that a third reflection mechanism is mounted on the disk, and the plurality of second laser interferometers are used to irradiate the laser light from the light source at a plurality of locations. The laser reflected by the reflection mechanism 201035697 is used to detect the displacement of the chuck, and the plurality of laser displacement correction formulas are corrected according to the formula by the corrected plurality of laser displacement meters, according to the corrected measurement.疋,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The measurement result of the displacement meter. The manufacturing method of the panel substrate for display of this invention is the exposure of the board|substrate by using the above-mentioned one type of proximity-type wire, or the board|substrate positioning method of the above-mentioned type of proximity exposure apparatus. The substrate is positioned to perform exposure of the substrate. Since the positioning of the substrate during exposure can be performed with high precision, the pattern can be accurately fired to manufacture a high-quality product. [Effect of the Invention] According to the proximity exposure apparatus and the substrate positioning method of the proximity exposure apparatus of the present invention, a chuck is mounted on a moving platform, and the moving platform has a movement in the X direction (or the γ direction). The second platform, the second platform mounted on the i-th platform and moving in the Y direction (or the X direction), and the third platform mounted on the second platform and rotating in the θ direction, and installed on the second platform A plurality of laser displacement meters move a plurality of laser displacement meters together with the chuck in the XY direction, and measure the displacement of the plate in a plurality of places by a plurality of laser displacement meters, and detect the chuck in the x direction according to the measurement result. The slope is upward, and according to the detection result, the chuck is rotated in the Θ direction through the third platform to advance the positioning of the substrate in the θ direction by 201035697, thereby setting the plurality of laser displacement meters more separately. Therefore, the inclination of the chuck in the θ direction can be accurately detected and the positioning of the substrate in the θ direction can be accurately performed. Further, the proximity exposure apparatus and the proximity exposure apparatus according to the present invention In the substrate positioning method, the first reflection mechanism is attached to the first stage, the second reflection mechanism is placed on the second flat surface, and the laser beam from the light source and the first reflection mechanism are used by the first laser interferometer. The interference of the reflected laser beam is measured, and the interference between the laser beam from the light source and the laser beam reflected by the second reflection mechanism is measured at a plurality of locations by a plurality of second laser interferometers, and based on the measurement result Detecting the position of the mobile platform in the ΧΥ direction, and moving the chuck in the χ γ direction through the second platform and the second platform to perform positioning of the substrate in the ΧΥ direction, thereby accurately detecting the mobile platform Since the position of the substrate in the χγ direction can be accurately performed, the position of the substrate in the χγ direction can be accurately performed. Further, the sway of the moving platform when moving in the direction can be detected based on the measurement results of the plurality of second laser interferometers. Further, according to the base exposure method of the proximity exposure apparatus and the proximity exposure apparatus of the present invention, the laser beam S3 reflection mechanism passes the laser beam from the light source at a plurality of locations through the plurality of second f-interference devices' The interference of the reflection (four) of the reflection mechanism is measured, and the displacement of the chuck is detected according to the measurement result, and the correction result of the failure result of the material is prepared according to the detection result and the plurality of laser displacement measurement results. The three-way complements the secret wire to determine the determination of the plurality of laser materials. According to the measured results of the modified multiple laser displacement meters, σ 11 201035697 = the slope of the lost disk in the θ direction, Therefore, when the correction formula for correcting the laser displacement result is produced, the displacement of the disk can be accurately performed using the laser length measuring system, and the measurement results of the laser and the shift can be accurately corrected. Therefore, it is possible to accurately detect the slope in the direction of the swash plate, and to advance the substrate in the upward direction. According to the method for producing a panel substrate for a display of the present invention, the substrate mosquitoes during exposure can be accurately performed. Therefore, the pattern can be fired with high precision, and a high-quality display panel substrate can be manufactured. The above and other objects, features, and advantages of the present invention will become more apparent from the understanding of the appended claims appended claims [Embodiment] FIG. 1 is a view showing a schematic configuration of a proximity exposure apparatus according to an embodiment of the present invention. 2 is a front view of a proximity exposure apparatus according to an embodiment of the present invention, and FIG. 3 is a side view of a proximity exposure apparatus according to an embodiment of the present invention. This embodiment shows an example of a proximity exposure apparatus using two moving platforms. The proximity exposure apparatus includes a chuck l〇a, l〇b; a base 11; a stage 12; an X guide (gUider) 13; a moving platform; a mask holder 20; Length measuring system control device 30; laser length measuring system; laser displacement meter control device; laser displacement meter 42, 43, 44; bar mirror 45, 46, 47; main control device 70; input and output interface The circuits 71 and 72 and the platform drive circuits 80a and 80b are formed. In addition, in FIG. 2 and FIG. 3 12 201035697, the laser length measuring system control device 30, the laser source 31 of the laser length measuring system, the laser displacement meter control device 40, the main control device 70, the input/output interface circuit are omitted. 71, 72 and platform drive circuits 80a, 80b. The proximity exposure device includes, in addition to these portions, an illuminating optical system that illuminates the exposure light, a substrate transfer robot, and a temperature control unit that performs temperature management in the device. Further, the χγ direction in the embodiment described below is merely an example, and the X direction and the γ direction may be reversed. In Figs. 1 and 2, the chuck 10a is located at an exposure position at which exposure of the substrate 1 is performed, and the chuck 10b is located at a loading/unloading position at which loading/unloading of the substrate 1 is performed. The loading/unloading position for the chuck 10a is located on the left side of the drawing of the exposure position. The chucks l〇a, lb are alternately moved from the respective loading/unloading positions to the exposure positions by the respective moving platforms described below. At each of the loading/unloading positions, the substrates are transported to the chucks 10a and 10b by the substrate transfer robots (not shown), and the substrates i are carried out from the chucks i〇a and 10b. The chucks 10a, 10b support the substrate i in a vacuum-adsorbing manner. Above the exposure position, a mask frame 2 that holds the mask 2 is provided. The mask frame 20 holds the peripheral portion of the mask 2 in a vacuum-adsorbing manner. An illumination optical system (not shown) is disposed above the mask 2 held on the mask frame 2''. At the time of exposure, the exposure light from the illumination optical system passes through the mask 2 and is irradiated onto the substrate 1, whereby the pattern of the mask 2 is transferred onto the surface of the substrate raft to form a pattern on the substrate 1. In Fig. 2, the chucks 10a, 10b are respectively mounted on a mobile platform. Each mobile platform includes an X platform 14, a Y-guide ΐ5, a γ-platform 16, a 0-level 13 201035697 π, and a chuck support table 19. On the X-guide 13 provided on π, move along ==. γ platform guards ° 13 to the X direction, along; to the θ side _. The chuck_stage 19 supports the clamping/rotating' at a plurality of positions to carry the substrate mounted on the chuck one b:

ί 麵綠置上,㈣各軸平臺的X :臺14向X方向的移動以及¥平臺 =進行由炎盤收、娜所支持的基板丨的朝向χγ方向的 步進(step)移動。並且,通過各移動平臺的X平臺14向 f方向的移動、Y平臺16向γ方向的移動、以及θ平臺 Π向Θ方向的旋轉’而進行曝光時的基板丨的定位。而且, 通過未圖示的Ζ-傾斜(tilt)機構,將遮罩架2〇向ζ方向 移動以及麟’以此來it行鮮2與基板丨的縫隙對準。 在圖1中’平臺驅動電路80a通過主控制裝置7〇的控 制,對搭載著夾盤l〇a的移動平臺的χ平臺14、γ平臺 16、以及Θ平臺17進行驅動。而且,平臺驅動電路職 通過主控制裝i 70的控制,對搭載著夾盤勘的移動平臺 的X平臺14、Y平臺16、以及θ平臺17進行驅動。 201035697 此外,在本實施形態中,通過將遮罩架2〇向z方向 移動以及騎,從錢行鮮2與基板丨的縫隙對準,但 也可在各移動平臺的夾盤支科β上設置z傾斜機構, 以將夾盤10a、l〇b向Z方向移動以及傾斜,以此來進行 遮罩2與基板1的縫隙對準。ί face green, (4) X of each axis platform: movement of the table 14 in the X direction and ¥ platform = stepwise movement of the substrate 支持 in the χ γ direction supported by the plate. Further, the positioning of the substrate 曝光 during exposure is performed by the movement of the X stage 14 of each moving platform in the f direction, the movement of the Y stage 16 in the γ direction, and the rotation of the θ stage Θ in the Θ direction. Further, the mask frame 2 is moved in the ζ direction by the Ζ-tilt mechanism (not shown), and the lining is aligned with the slit of the substrate 以此. In Fig. 1, the platform driving circuit 80a is driven by the main control unit 7A to drive the crucible platform 14, the gamma stage 16, and the crucible platform 17 of the mobile platform on which the chuck 10a is mounted. Further, the platform drive circuit is driven by the main control unit i 70 to drive the X platform 14, the Y platform 16, and the θ platform 17 of the mobile platform on which the chuck is mounted. In addition, in the present embodiment, by moving the mask frame 2 in the z direction and riding, it is aligned with the gap between the substrate 2 and the substrate, but it can also be on the chuck branch of each mobile platform. The z-tilt mechanism is provided to move and tilt the chucks 10a and 10b in the Z direction, thereby aligning the gap between the mask 2 and the substrate 1.

❹ 以下’對本實施形態的接近式曝光裝置的基板的定位 動作進行綱。在圖i t,雷侧長純包括雷射源31 ; ,射干涉儀32a、32b、33 ;棒鏡34a、34b、35以及鏡面 單元50而構成。各移動平臺的χ平臺14搭载在X引導器 13上,因此在基座η與χ平臺14之間產生與X引導 器13的高度相應的空間。向γ方向延伸的棒鏡地、地 利用該安裝在X平臺14之下。兩個雷射干涉儀 32a、32b分別設置在基座U的離開χ引導器13的位置 上。在圖2以及圖3中’向X方向延伸的棒鏡%通過臂 36,以大致夾盤l〇a、i〇b的高度而安裝在各移動平臺的γ 平臺16上。兩個雷射干涉儀33設置在基座u上所設的台 12上。 圖4以及圖5是說明雷射測長系統的動作的圖。此外, 圖4表示夾盤i〇a位於曝光位置,夾盤1%位於加載/卸載 位置的狀態,圖5表示夾盤l〇b位於曝光位置,夾盤i〇a 位於加載/卸載位置的狀態。在圖4以及圖5中,兩個雷射& 干涉儀32a將來自雷射源31的雷射照射到棒鏡34&,並接 收由棒鏡34a所反射的雷射,以在兩處對來自雷射源 的雷射與由棒鏡34a所反射的雷射的干涉進行測定'、。而 15 201035697 且’兩個雷射干涉儀32b將來自雷射源31的雷射照射到棒 鏡34b,並接收由棒鏡3牝所反射的雷射,以在兩處對來 自雷射源31的雷射與由棒鏡34b所反射的雷射的干涉進行 測定。 在圖1中,雷射測長系統控制裝置30通過主控制襞置 70的控制,根據兩個雷射干涉儀32a的測定結果來檢測搭 ,著夾盤10a的移動平臺在X方向上的位置,而且檢測X 平臺14向X方向移動時的平擺(yawing)。而且,雷射 測長系統控制裝置30通過主控制裝置7〇的控制,根據兩 個雷射干涉儀32b的測定結果來檢測搭載著夾盤丨此的移 動平臺在X方向上的位置,而且檢測χ平臺14向又方向 移,時的平擺。使用雷射測長系統而精度良好地檢測各移 動平臺在X方向上的位置。而且,可根據兩個雷射干涉儀 32a、32b各自的測定結果,來檢測各移動平臺 14向X方向移動時的平擺。 在圖4以及圖5中,兩個雷射干涉儀33將來自雷射源 31的雷射照射到棒鏡35’並接收由棒鏡%所反射的雷射, 以在兩處對來自雷射源31的#射與由棒鏡35所反射的雷 射的干涉進行測定。在圖丨巾,雷射測長系統控制裝置% ,過主控制裝置70的控制,根據兩個雷軒涉儀%的 定結果來檢測搭載著位於曝光位置的夾盤恤、勘的移動 =在Y方向上的位置,而且檢測搭載著位於曝光位置的 ^盤l〇a、娜的移動平臺向灯方向移動時的平擺。使用 雷射測長系統崎度良好地檢測搭載著位於曝光位置的央 16 201035697 盤10a、10b的移動平臺在γ方向上的位置。而且 據兩個雷射干涉儀33的測定結果,來檢測搭 位置的夹盤.勘的移動平臺向冗方向移動時的平曝擺先 此外圖=移動平臺的俯視圖,圖7移動平臺的側面圖。 °以及圖7表示搭載著夾盤10a的移動平臺技 ^著^盤u>b的移動平臺除了雷射位移計42以 口 ❹ 〇 ίΠΓΓ,與搭載著夾盤10a的移動平臺為相同的 移計42是與棒鏡45相向地4 t 之下。雷射位移計42將雷射照射到捲於 接收由棒鏡45所反射的雷射,以測定Y平臺16 向上的位移。在圖i中,雷射位移計控姆置在= 夾盤I〇a的背面。兩:雷::移方計向安裝在 ==;—平臺16上的棒=地 合W射位移§十43安裝在γ卓喜μ μ m 心卜 μ以及y平臺16而將夾盤1〇a向χγ方向平臺 射位移計43與夾盤10a 一同向χγ方向移動移=時,各雷 移計43將雷射照射到棒鏡奶,並 兩個雷射位 ^射,以在兩處測定棒鏡46在γ方向由上棒^所反射的 中,雷射位移計控制裝置4〇通過主控制裝的位,。在圖! 根據兩個雷綠料43的败結果諸測n, 17 201035697 方向上的斜度。 在Y平臺16上設置兩個雷射位移計幻,將兩個雷射 位移計43與夾盤10a -同向XY方向移動,並通過兩個雷 射位移計43而在多處測定夾盤i〇a的位移,因此由各雷射 位移計43所測定的夾盤10a的位移不會因夾盤1〇a的移動 而發生變動。即使將夾盤10a向XY方向移動,雷射位移 計43的測定範圍亦不會擴大’因此可將兩個雷二位移計 43設置得更隔開。 在圖6中,向Y方向延伸的棒鏡47安裝在夾盤i〇a 〇 的背面。雷射位移計44通過臂48而與棒鏡47相向地安裝 在Y平臺16上。雷射位移計44將雷射照射到棒鏡47,並 接收由棒鏡47所反射的雷射,以測定棒鏡47在又方向上 的位移。在圖1中,雷射位移計控制裝置4〇通過主控制裝 置70的控制,根據兩個雷射位移計43的測定結果以及雷 射位移計44的測定結果’來檢測因向θ方向的旋轉而引起 的夾盤1 〇a在ΧΥ方向上的位置變化。 在圖1中主控制裝置70經由輸入輸出介面電路η 而輸入雷射測長系統控制裝置30的檢測結果。而且,主控 制裝置70經由輸入輸出介面電路72而輸入雷射位移計控 制裝置40的檢測結果。並且,主控制裝置70根據雷射位 移計控制裝置40對夾盤i〇a、在Θ方向上的斜度的檢 測結果’來控制平臺驅動電路8〇a、80b,並通過θ平臺17 而使夾盤l〇a、l〇b向Θ方向旋轉,以進行基板1在θ方向 上的定位。而且,主控制裝置70根據雷射測長系統控制裝 18 201035697 置30對移動平臺在XY方向上的位置的檢測結果,來控制 平臺驅動電路8〇a、80b,並通過X平臺14以及γ平臺16 而使夾盤l〇a、l〇b向XY方向移動,以進行曝光時的1板 1在XY方向上的定位。 其次,對雷射位移計43的測定結果的修正進行說明。 圖8是表示雷射位移計的輸出特性的圖。圖8的橫軸表示 以雷射位移計而測定的實際位移,縱軸表示雷射位移計的 輸出。如圖8所示’在將雷射位移計的測定結果近似為直 線時’在近似直線由以虛線來表*的理想直線偏離的情況 下’必須對雷射位料的峡結果進行修正。雷射位移叶 的輸出特性缺乏直雜’若擴大測定制,則敎結果會 較大地偏賴近似錄。因此,制啦結果與該近似直 線之差處於規定的容許值以_範圍來作為測定範圍。 雷射測長祕的鏡面單元50包括馬達(m〇t〇r) 引導器52以及鏡面q、a ^ α _ 圖9是說明雷射位移計的測定結果的修正方法的圖。❹ The following is a description of the positioning operation of the substrate of the proximity exposure apparatus of the present embodiment. In Fig. 1, the mine side is purely including a laser source 31; the interferometers 32a, 32b, 33; the rod mirrors 34a, 34b, 35 and the mirror unit 50 are formed. The cymbal platform 14 of each mobile platform is mounted on the X guide 13, so that a space corresponding to the height of the X guide 13 is generated between the susceptor η and the cymbal platform 14. The rod extending in the gamma direction is mounted under the X platform 14 by means of the mirror. The two laser interferometers 32a, 32b are respectively disposed at positions of the base U away from the crucible guide 13. In Fig. 2 and Fig. 3, the rod mirror % extending in the X direction is attached to the gamma stage 16 of each moving platform by the arm 36 at a height of substantially the chucks 10a, i〇b. Two laser interferometers 33 are disposed on the stage 12 provided on the base u. 4 and 5 are views for explaining the operation of the laser length measuring system. Further, Fig. 4 shows a state in which the chuck i〇a is in the exposure position, the chuck 1% is in the loading/unloading position, and Fig. 5 shows the state in which the chuck l〇b is in the exposure position and the chuck i〇a is in the loading/unloading position. . In Figures 4 and 5, two laser & interferometers 32a illuminate the laser from the laser source 31 to the rod mirror 34& and receive the laser reflected by the rod mirror 34a to be in two places. The laser from the laser source is measured by the interference of the laser reflected by the rod mirror 34a. And 15 201035697 and 'two laser interferometers 32b illuminate the laser from the laser source 31 to the rod mirror 34b and receive the laser reflected by the rod mirror 3牝 to contact the laser source 31 at two places. The laser is measured by interference with the laser reflected by the rod mirror 34b. In FIG. 1, the laser length measuring system control device 30 detects the position of the moving platform of the chuck 10a in the X direction based on the measurement results of the two laser interferometers 32a by the control of the main control unit 70. And detecting the yawing when the X platform 14 moves in the X direction. Further, the laser length measuring system control device 30 detects the position of the moving platform on which the chuck is mounted in the X direction based on the measurement results of the two laser interferometers 32b by the control of the main control device 7A, and detects The platform 14 is moved in the direction of the other direction. The position of each mobile platform in the X direction is accurately detected using a laser length measuring system. Further, the sway of each of the moving platforms 14 when moving in the X direction can be detected based on the respective measurement results of the two laser interferometers 32a, 32b. In Figures 4 and 5, two laser interferometers 33 illuminate the laser from the laser source 31 to the rod mirror 35' and receive the laser reflected by the rod mirror % to contact the laser at two locations. The # shot of the source 31 is measured by the interference of the laser reflected by the rod mirror 35. In the figure wiper, the laser length measuring system control device %, the control of the main control device 70, according to the results of the two Ray Xuan instrument% detection to carry the chuck shirt in the exposure position, the movement of the survey = in The position in the Y direction is detected by the mounting of the disk at the exposure position, and the movement of the moving platform in the direction of the lamp. The position of the moving platform on which the disk 16a, 10b of the central 16 201035697 at the exposure position is mounted in the γ direction is detected with the laser length measuring system. Moreover, according to the measurement results of the two laser interferometers 33, the chuck for detecting the position is detected. The flat exposure of the moving platform when moving to the redundant direction is first; the top view of the mobile platform; the side view of the mobile platform of FIG. . ° and FIG. 7 shows that the moving platform of the mobile platform technology on which the chuck 10a is mounted is the same as the mobile platform on which the chuck 10a is mounted, except that the laser displacement meter 42 is used for the movement platform. 42 is below 4 t opposite the rod mirror 45. The laser displacement meter 42 illuminates the laser light to receive the laser reflected by the rod mirror 45 to determine the upward displacement of the Y stage 16. In Figure i, the laser displacement meter is placed on the back of the = chuck I〇a. Two: Ray:: Shift gauge installed on ==; - Platform 16 on the rod = ground combined with the W displacement § 10 43 installed in the γ Zhuo Xi μ μ m heart and μ platform y and the chuck 1 〇 When the a-direction γ-direction plateau displacement meter 43 moves in the χγ direction together with the chuck 10a, each of the lightning meters 43 irradiates the laser to the rod mirror milk, and the two laser positions are shot to measure at two places. The rod mirror 46 is reflected by the upper rod in the gamma direction, and the laser displacement gauge control device 4 passes through the position of the main control unit. In the picture! According to the results of the failure of the two thunder greens 43, the slope in the direction of n, 17 201035697 is measured. Two laser displacement meters are arranged on the Y platform 16, two laser displacement meters 43 are moved in the same direction as the chuck 10a, and the chucks i are measured in multiple places by two laser displacement meters 43. Since the displacement of 〇a is such that the displacement of the chuck 10a measured by each of the laser displacement meters 43 does not change due to the movement of the chuck 1A. Even if the chuck 10a is moved in the XY direction, the measurement range of the laser displacement meter 43 is not enlarged. Therefore, the two Rayleigh displacement meters 43 can be set to be more spaced. In Fig. 6, a rod mirror 47 extending in the Y direction is attached to the back surface of the chuck i〇a 〇. The laser displacement meter 44 is mounted on the Y stage 16 opposite the rod mirror 47 by the arm 48. The laser displacement meter 44 irradiates the laser to the rod mirror 47 and receives the laser reflected by the rod mirror 47 to measure the displacement of the rod mirror 47 in the other direction. In FIG. 1, the laser displacement gauge control device 4 detects the rotation in the direction of θ based on the measurement results of the two laser displacement meters 43 and the measurement result of the laser displacement meter 44 by the control of the main control device 70. The resulting position of the chuck 1 〇a in the ΧΥ direction changes. In FIG. 1, the main control device 70 inputs the detection result of the laser length measuring system control device 30 via the input/output interface circuit η. Further, the main control unit 70 inputs the detection result of the laser displacement meter control unit 40 via the input/output interface circuit 72. Further, the main control unit 70 controls the stage drive circuits 8a and 80b based on the detection result of the tilt of the chuck i〇a and the tilt in the x direction, and the θ platform 17 is used. The chucks l〇a, lb are rotated in the x direction to position the substrate 1 in the θ direction. Moreover, the main control device 70 controls the platform driving circuits 8a, 80b according to the detection results of the position of the mobile platform in the XY direction according to the laser length measuring system control unit 18, and passes through the X platform 14 and the gamma platform. 16 The chucks l〇a, l〇b are moved in the XY direction to perform positioning of the one plate 1 in the XY direction at the time of exposure. Next, the correction of the measurement result of the laser displacement meter 43 will be described. Fig. 8 is a view showing an output characteristic of a laser displacement meter. The horizontal axis of Fig. 8 represents the actual displacement measured by the laser displacement meter, and the vertical axis represents the output of the laser displacement meter. As shown in Fig. 8, 'when the measurement result of the laser displacement meter is approximated as a straight line', when the approximate straight line is deviated from the ideal straight line indicated by the broken line*, it is necessary to correct the gorge result of the laser material. The output characteristics of the laser displacement vane lack straight line. If the measurement system is expanded, the result will be largely biased. Therefore, the difference between the result of the production and the approximate straight line is within a predetermined allowable value in the range of _ as the measurement range. The mirror unit 50 of the laser length measurement includes a motor (m〇t〇r) guide 52 and a mirror surface q, a ^ α _ FIG. 9 is a diagram for explaining a method of correcting the measurement result of the laser displacement meter.

^達51而沿著升降引導器52進行升降。 各鏡面53、54平時是通過馬達51而下 201035697 降。如圖9所示,當通過馬達51而使各鏡面53、%上升 時’從各雷射干涉儀33照射的雷射由各鏡面53、54反射, 而分別照賴棒鏡46。並且,由棒鏡46所反射的雷射由 各鏡面54、53反射’而分別照射到各雷射干涉儀33。兩 ==干涉儀33接收由棒鏡46所反射_射,以在兩處 對來自雷射源的雷射與由棒鏡杯所反射的雷射 進行測定。 在圖1中’雷射測長系統控制裝置30通過主控制裝置 33 根摅二 Υ方向上的位移。雷射位料控制裝置40 制裝置30而檢測出的夾盤i〇a、湯 田雷射位移計43的败結果來製作修正式,該 ί if 兩㈣射位料43的败結果進行修正,以 ==立移計43的測定結果與雷射統Up to 51 and up and down along the lift guide 52. Each mirror surface 53, 54 is normally lowered by the motor 51 and down 201035697. As shown in Fig. 9, when the mirror faces 53 and % are raised by the motor 51, the laser beams irradiated from the respective laser interferometers 33 are reflected by the respective mirror faces 53, 54 and respectively illuminate the bar mirror 46. Further, the laser reflected by the rod mirror 46 is reflected by the mirror surfaces 54, 53 and is irradiated to each of the laser interferometers 33, respectively. The two == interferometers 33 receive the reflections from the rod mirror 46 to measure the laser from the laser source and the laser reflected by the rod mirror at two locations. In Fig. 1, the laser length measuring system control unit 30 is displaced by the main control unit 33 in the direction of the second direction. The laser level control device 40 detects the result of the failure of the chuck i〇a and the Yuda laser displacement meter 43 to create a correction formula, and the result of the ί if two (four) shot material 43 is corrected to ==The measurement result of the dynamometer 43 and the laser system

檢測出的夾盤收、働的位移一致 Z =控制裝置40每當各雷射位移計 2的位移進行測定時,通過製作朗修正;4== 射位移計43的測定結果。 式來修正各雷 的圖圖U)是表示修正前的雷射位移計的測定处杲 的圖,圖10之(b)是表示修 j心。果 果的圖。修正前的雷射位移計43的測^果中^测定結 ==直線,因此在測定範圍内產生 二線 1〇之⑴卿,独直線與理線重合:定中誤= 20 201035697 向上的斜度。 果,來檢測夾盤10a、騰在Θ方 M ,〇a 1〇b上安裝棒鏡46,通過兩個雷射干、、步 尸’而在多處對來自雷射源 田= ❹ Ο 1!= 干涉進行測定,並根據測定結果來檢= 、列定姓果’根據檢測結果與兩個雷射位移計43的 正的修正式,通過製作成的修正式來修正兩鱗射位= 43的叙結果,絲雜錢的兩鱗射位料a的則The detected displacement of the chuck and the cymbal are consistent. Z = The control device 40 makes a correction for each time the displacement of each of the laser displacement meters 2 is measured; 4 == the measurement result of the displacement meter 43. The figure U) for correcting each mine is a map showing the measurement position of the laser displacement meter before correction, and (b) of Fig. 10 is for repairing the heart. The figure of the fruit. Before the correction, the measurement of the laser displacement meter 43 determines the knot == straight line, so in the measurement range, the second line 1〇(1) is generated, and the straight line coincides with the line: the middle error = 20 201035697 upward tilt degree. If you want to detect the chuck 10a, squat on the square M, 〇a 1〇b, install the rod mirror 46, and pass the two lasers to dry, and the corpse 'in multiple places from the laser source field = ❹ Ο 1!= The measurement is performed by interference, and according to the measurement result, the result of the two scales = 43 is corrected according to the detection result and the positive correction formula of the two laser displacement meters 43 according to the detection result. As a result, the two scales of the silky money shoot a

St檢測夹盤·财θ方向上的斜度,因此在製 作對雷射位料43 _定結果進娜正的修正式時^用 由射測長纽而精度良好地檢測㈣此、1%的 精度良好地修正雷射位移計43的測定結果。 根據以上所說明的本實施形態,在移動平臺 盤伽、,該移動平臺具有向χ方向移動的χ平臺= 搭載在X平臺14上並向γ方向移動的γ平臺i6、以及搭 載在Υ平臺16上並向Θ方向旋轉的θ平臺17,且在 臺16上設置兩個雷射位移計43,以將兩個雷射位 與夾盤10a、10b -同向ΧΥ方向移動,通過兩個雷射位移 計43而在多處測定夾盤10a、的位移,根據測定 來檢測爽盤lOa'IGb在Θ方向上的斜度,並根據檢測^果, 通過Θ平臺Π而將爽盤10a、10b向θ方向旋轉以σ進行 基板1在θ方向上的定位’以此可將兩個雷射位移計43 21 201035697 設置得更隔開’因此可精度良好地檢測夾盤l〇a、在0 方向上的斜度’以精度良好地進行基板1在Θ方向上的定 位。 進而,在X平臺14上安裝棒鏡34a、34b,在γ平臺 16上安裝棒鏡35,通過雷射干涉儀32a、32b,對來自雷 射源31的雷射與由棒鏡34a、34b所反射的雷射的干涉進 行測定,並通過兩個雷射干涉儀33而在兩處對來自雷射源 31的雷射與由棒鏡35所反射的雷射的干涉進行測定,根 據測定結果來檢測移動平臺在χγ方向上的位置,並根據 檢測結果,通過X平臺14以及γ平臺16而將夾盤1〇a、 10b向XY方向移動,以進行基板1在又丫方向上的定位, 以此可精度良好地檢測移動平臺在χγ方向上的位置,因 此可精度良好地進行基板1在χγ方向上的定位。而且, 根據兩個雷射干賴33 _定結果,可雜_位於曝光 位置的夹盤10a、l〇b的移動平臺向χγ方向移動時的平擺 汾不八皿1V"、川〇上女褒榉鏡46,通過兩拖 射干"儀33 *衫處對來自雷射源31的雷 涉進行測定,根據測定結输 的位移,並根據檢測結果和兩個雷 ^測定結果,而製作對兩個雷射位移計43的:士移果十 ^的修私,通韻制的紅絲修正 果’並根雜正後的_雷射位移計43 U,而檢測央盤10a、勘在θ方向上的斜度,以此 22 201035697 ^製作對雷射位料43的敎絲進行修正的修正式 使用雷射測長系統來精度良好地檢測夾盤10a、 ^移二且可精度良好地修正雷射位移計43 _定 =麻可進-步精度良好地檢測夾盤咖、娜在θ方向上 的斜度H步精歧好地進行基板丨在θ方向上St detects the slope in the direction of the chuck and the money θ. Therefore, when making a correction formula for the laser position 43 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The measurement result of the laser displacement meter 43 is corrected with high precision. According to the present embodiment described above, the moving platform has a χ platform that moves in the χ direction, a γ stage i6 that is mounted on the X stage 14 and moves in the γ direction, and is mounted on the Υ platform 16 in the moving platform. θ platform 17 rotating upward and in the Θ direction, and two laser displacement meters 43 are arranged on the stage 16 to move the two laser positions in the same direction as the chucks 10a, 10b, through two lasers The displacement meter 43 measures the displacement of the chuck 10a at a plurality of places, and detects the inclination of the shovel 10a'IGb in the Θ direction according to the measurement, and according to the detection, the sizzling plates 10a, 10b are turned by the Θ platform Π Rotation in the θ direction σ is used to position the substrate 1 in the θ direction. This allows the two laser displacement meters 43 21 201035697 to be more spaced apart. Therefore, the chuck l〇a can be accurately detected in the 0 direction. The inclination 'the positioning of the substrate 1 in the x-direction is performed with high precision. Further, the rod mirrors 34a, 34b are mounted on the X stage 14, and the rod mirror 35 is mounted on the gamma stage 16, and the laser beam from the laser source 31 and the rod mirrors 34a, 34b are used by the laser interferometers 32a, 32b. The interference of the reflected laser is measured, and the interference of the laser from the laser source 31 and the laser reflected by the rod mirror 35 is measured at two places by the two laser interferometers 33, according to the measurement result. Detecting the position of the mobile platform in the χγ direction, and moving the chucks 1〇a, 10b in the XY direction through the X platform 14 and the γ platform 16 according to the detection result, so as to position the substrate 1 in the 丫 direction, This makes it possible to accurately detect the position of the moving platform in the χγ direction, so that the positioning of the substrate 1 in the χγ direction can be performed with high precision. Moreover, according to the results of the two lasers, the moving platform of the chucks 10a and 10b located at the exposure position moves toward the χγ direction, and the flat swing is not a dish 1V" The frog mirror 46 measures the lightning from the laser source 31 through two drag-and-drop instruments, and according to the measurement of the displacement of the junction, and according to the detection result and the results of the two lightning measurements, two pairs are produced. The laser displacement meter 43: the smuggling of the Shi Shi fruit ten ^, the red silk correction effect of the rhyme system and the _ laser displacement meter 43 U, and the detection of the central disc 10a, surveyed in the θ direction The slope of the upper surface is corrected by the use of the laser length measuring system to accurately detect the chuck 10a, the second shift and the mine can be accurately corrected by using the laser length measuring system at 22 201035697. The displacement meter 43 _定=麻可进-steps accurately detect the slope of the chuck, the slope in the θ direction, the H step is fine, and the substrate is in the θ direction.

❹ 使用本發明的接近式曝光裝置來進行基板的曝光,或 者使用本發明賴近祕域置縣缺财絲對基板 進行定位,崎行基㈣曝光,⑽可精度良好地進行曝 先時的基板的定位,因此可精度良好地進行圖案的燒製, 以製造高品質的顯示用面板基板。 例如’圖11是表不液晶顯示裝置的TFT基板的製造 步驟的一例的流程圖。在薄膜形成步驟(步驟1〇1)中, 通過濺鑛(sputter)法或電聚化學氣相成長(chemical vap〇r deposition’ CVD)法等,在基板上形成作為液晶驅動用透 明電極的導電體膜或職_等的賴。在絲塗布步驟 (步驟102)巾’利用輥(Γο11)塗布法等而塗布感光樹脂 材料(光阻劑),在薄膜形成步驟(步驟1〇1)中形成的 薄膜上形成光阻劑膜。在曝光步驟(步驟1〇3)中,使用 接近式曝光裝置或投影曝光裴置等,將遮罩的圖案轉印到 光阻劑膜上。在顯影步驟(步驟1〇4)中,利用喷淋(sh〇wer) 顯衫法4,將顯影液供給到光阻劑膜上,去除光阻劑膜的 多餘部分。在蝕刻步驟(步驟105)中,利用濕式蝕刻(wet etching),將薄膜形成步驟(步驟1〇1)中形成的薄膜内 23 201035697 irJ、1阻劑膜遮掩的部分予以去除。在剝離步驟(步驟 ’利用剝離液’將姓刻步驟(步驟105)中完成遮 、4用的光阻冑樓彳離。在這些各步驟之前或之後, 視需要而實把基板的清洗/乾燥步驟。反復進行這些步驟數 次,在基板上形成TFT陣列(array)。 一 而且’圖12是表示液晶顯示裝置的彩色滤光器基板的 I造步驟的-例的流簡。在黑色矩陣(biaekmatrix)形 成步驟(步驟201)中’通過光阻塗布、曝光、顯影、蝕 刻、剝離等的處理,而在基板上形成黑色矩陣。在著色冑 Ο 案形成步驟(步驟2G2)中,通過染色法、顏料分散法、 印刷法、電解沉積法等,而在基板上形成著色圖案。針對 R、G、B的著色圖案而反復進行該步驟。在保護膜形成步 驟(步驟203)中,在著色圖案上形成保護膜,在透明電 極膜形成步驟(步驟2G4)中,在保護膜上形成透明電極 膜。在這些各步驟之前、中途或之後,視需要而實施基板 的清洗/乾燥步驟。 在圖11所示的TFT基板的製造步驟中,在曝光步驟 ◎ (步驟103)中,在圖12所示的彩色濾光器基板的製造步 驟中’在黑色矩陣形成步驟(步驟201)以及著色圖案形 成步驟(步驟202)的曝光處理中,可適用本發明的接近 式曝光裝置或本發明的接近式曝光裝置的基板定位方法。 雖然本發明已以較佳實施例揭露如上’然其並非用以 限定本發明,任何熟習此技藝者,在不脫離本發明之精神 和範圍内,當可作些許之更動與潤飾,因此本發明之保護 24 201035697 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1是表示本發明一實施形態的接近式曝光裝置的概 略構成的圖。 圖2是本發明一實施形態的接近式曝光裝置的正面圖。 圖3是本發明—實施形態的接近式曝光裝置的侧面圖。 圖4是說明雷射測長系統的動作的圖。 圖5是說明雷射測長系統的動作的圖。 圖6是移動平臺的俯視圖。 圖7是移動平臺的侧面圖。❹ Exposing the substrate by using the proximity exposure apparatus of the present invention, or positioning the substrate by using the present invention, and using the front-end of the county to locate the substrate, and exposing the substrate (4), and (10) accurately performing the substrate at the time of exposure. Since the positioning is performed, the pattern can be fired with high precision to manufacture a high-quality display panel substrate. For example, Fig. 11 is a flowchart showing an example of a manufacturing procedure of a TFT substrate showing a liquid crystal display device. In the film formation step (step 1〇1), conductivity as a transparent electrode for liquid crystal driving is formed on a substrate by a sputtering method or a chemical vapor deposition (CVD) method. Body film or job _ etc. In the wire coating step (step 102), the photosensitive resin material (photoresist) is applied by a roll coating method or the like, and a photoresist film is formed on the film formed in the film forming step (step 1〇1). In the exposure step (step 1〇3), the pattern of the mask is transferred onto the photoresist film using a proximity exposure device or a projection exposure device or the like. In the developing step (step 1〇4), the developer is supplied onto the photoresist film by a shower 4 method, and the excess portion of the photoresist film is removed. In the etching step (step 105), the portion of the film formed in the film forming step (step 1〇1), which is masked by the resist film, is removed by wet etching. In the stripping step (step 'Using the stripping solution', the masking step is completed in the surname step (step 105). Before or after these steps, the substrate is cleaned/dried as needed. Steps: These steps are repeated several times to form a TFT array on a substrate. One and FIG. 12 is a flow diagram showing an example of a process of forming a color filter substrate of a liquid crystal display device. In the forming step (step 201), a black matrix is formed on the substrate by a process of photoresist coating, exposure, development, etching, lift-off, etc. In the coloring pattern forming step (step 2G2), the dyeing method is employed. a pigment dispersion method, a printing method, an electrolytic deposition method, or the like, and a colored pattern is formed on the substrate. This step is repeated for the coloring patterns of R, G, and B. In the protective film forming step (step 203), the colored pattern is formed. A protective film is formed thereon, and a transparent electrode film is formed on the protective film in the transparent electrode film forming step (step 2G4). Before, during or after these steps, the substrate is implemented as needed. In the manufacturing step of the TFT substrate shown in FIG. 11, in the exposure step ◎ (step 103), in the manufacturing step of the color filter substrate shown in FIG. 12, the step in the black matrix formation step. In the exposure processing of (step 201) and the coloring pattern forming step (step 202), the proximity exposure apparatus of the present invention or the substrate positioning method of the proximity exposure apparatus of the present invention can be applied. Although the present invention has been disclosed in the preferred embodiment As described above, it is not intended to limit the invention, and any person skilled in the art can make some modifications and retouchings without departing from the spirit and scope of the invention, so that the scope of protection 24 201035697 of the present invention is attached. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a schematic configuration of a proximity exposure apparatus according to an embodiment of the present invention. Fig. 2 is a front view of a proximity exposure apparatus according to an embodiment of the present invention. Fig. 3 is a side view of a proximity exposure apparatus according to an embodiment of the present invention. Fig. 4 is a view for explaining the operation of the laser length measuring system. Fig. 5 is a view for explaining the operation of the laser length measuring system. Figure 6 is a plan view of the mobile platform. Figure 7 is a side view of the mobile platform.

°丨π閃疋箝禾的修正方法的圖。A diagram of the correction method of the °丨π flashing forceps.

【主要元件符號說明】 基板 遮罩 夾盤 基座 2 l〇a > l〇b 11 25 201035697 12 台 13 X引導器 14 X平臺 15 Y引導器 16 γ平臺 17 θ平臺 19 夹盤支持台 20 遮罩架 30 雷射測長系統控制裝置 31 雷射源 32a、32b、33 雷射干涉儀 34a、34b、35、45 、46、47 棒鏡 36、48 臂 40 雷射位移計控制裝置 42、43、44 雷射位移計 50 鏡面單元 51 馬達 52 升降引導器 53、54 鏡面 70 主控制裝置 71、72 輸入輸出介面電路 80a、80b 平臺驅動電路 26[Main component symbol description] Substrate mask chuck base 2 l〇a > l〇b 11 25 201035697 12 stations 13 X guides 14 X platform 15 Y guides 16 γ platform 17 θ platform 19 chuck support table 20 Mask frame 30 laser length measuring system control device 31 laser source 32a, 32b, 33 laser interferometer 34a, 34b, 35, 45, 46, 47 bar mirror 36, 48 arm 40 laser displacement meter control device 42, 43, 44 Laser Displacement Meter 50 Mirror Unit 51 Motor 52 Elevator Guide 53, 54 Mirror 70 Main Control Unit 71, 72 Input/Output Interface Circuits 80a, 80b Platform Drive Circuit 26

Claims (1)

201035697 七、申請專利範圍: L種接近式曝光裝置,包括支持基板的夾盤以及保 持遮罩的遮罩架,且在遮罩和基板之間設置微小的縫隙,, 以將遮罩的圖案轉印到基板上, 此接近式曝光裝置的特徵在於包括: 、,移動平臺,具有向X方向(或γ方向)移動的第工 :臺、搭载在第1平臺上並向γ方向(或Χ方向)移動的 ❹ ^平臺、以及搭載在第2平臺上並向Θ方向旋轉的第3 平®,且該移動平臺搭載所述夾盤,α進行由所述夾盤所 支持的基板的定位; 多個雷射位移計,設置在所述第2平臺上,與所述爽 ―,向χγ方向移動,在多處測定所述夾盤的位移; 第1檢測機構,根據所述多個雷射位移計的測定结 果’而檢測所述夾盤在θ方向上的斜度; 、" 平臺驅動電路’驅動所述移動平臺;以及 ϋ 控制裝置,根據所述第1檢測機構的檢測結果來控制 辭臺购電路,並通過舰第3平臺來使所述夾盤向 方向旋轉,以進行基板在θ方向上的定位。 2.如申叫專利範圍第1項所述的接近式曝光裝置,其 r包括: 八 雷射測長系統’具有產生雷射的光源、安I在所述第 '臺上的第1反射機構、安裝在所述第2平臺上的第2 機構、對來自光源的雷射與由第1反射機構所反射的 讀的干涉進行败的第1雷射干涉儀、以及在多處對來 27 201035697 自光源的雷射與由第2反射機構所反射的雷射的干涉進行 測定的多個第2雷射干涉儀;以及 第2檢測機構’根據所述雷射測長系統的第1雷射干 涉儀及多個第2雷射干涉儀的測定結果,而檢測所述移動 平臺在XY方向上的位置,且 所述控制裝置根據所述第2檢測機構的檢測結果來控 制所述平臺驅動電路,並通過所述第丨平臺及所述第2平 室來使所述夾盤向χγ方向移動,以進行基板在χγ方向 上的定位。 3. 如申晴專利範圍第2項所述的接近式曝光裝置,其 中包括: ' 安裝在所述夾盤上的第3反射機構,且 所述雷射測長系統通過多個第2雷射干涉儀,而在多 處對來自光源的雷射與由第3反射機構所反射的雷射的干 涉進行測定, 所述第2檢測機構根據所述雷射測長系統的多個第2 雷射干涉儀的測定結果,來檢測所述夾盤的位移, 所述第1檢測機構根據所述第2檢測機構所檢測出的 所述夾盤的位移和所述多個雷射位移計的測定結果,來製 作對所述多個雷射位移計的測定結果進行修正的修正式, 通過製作成的修正式來對所述多個雷射位移計的測定結果 進行修正,並根據修正後的所述多個雷射位料的測定結 果’來檢測夾盤在Θ方向上的斜度。 4. 一種接近式曝光裝置的基板定位方法,此接近式曝 28 201035697 光裝置包括支持基板的夾盤以及保持遮罩的遮罩架,且 遮罩和基板之間設置微小的縫隙,以將遮罩的圖 基板上’此接収曝錄㈣基缺位枝哺徵在於, 在移動平臺上搭做盤,該移動平臺具有 Y方向)移動的第1平臺、搭載在第i平臺上並向7方= (或X方向)移動的第2平臺、以及搭載在第2 ; 向Θ方向旋轉的第3平臺, 亚201035697 VII. Patent application scope: L kinds of proximity exposure devices, including a chuck supporting the substrate and a mask holder for holding the mask, and a small gap is formed between the mask and the substrate to turn the pattern of the mask Printed on a substrate, the proximity exposure apparatus includes: a moving platform having a movement to the X direction (or the γ direction): a table mounted on the first platform and oriented in the γ direction (or the Χ direction) a moving ❹^ platform and a third flat® mounted on the second platform and rotating in the Θ direction, and the moving platform is equipped with the chuck, and α performs positioning of the substrate supported by the chuck; a laser displacement meter disposed on the second platform, moving in the direction of the χ γ, and measuring the displacement of the chuck at a plurality of locations; the first detecting mechanism according to the plurality of laser displacements Measuring the result of the measurement and detecting the inclination of the chuck in the θ direction; , " the platform drive circuit' drives the mobile platform; and the control device, controlling the speech according to the detection result of the first detection mechanism Taiwan purchase The road is rotated by the ship's third platform in the direction of the chuck to position the substrate in the θ direction. 2. The proximity exposure apparatus of claim 1, wherein the apparatus comprises: an eight-laser length measuring system having a light source for generating a laser, and a first reflecting mechanism on the first stage. a second mechanism mounted on the second platform, a first laser interferometer that defeats the laser beam from the light source and the interference reflected by the first reflection mechanism, and is in multiple places 27 201035697 a plurality of second laser interferometers measured by interference of a laser beam from a light source and a laser reflected by a second reflection mechanism; and a second laser beam interference by the second detecting mechanism according to the laser length measuring system Measuring the position of the moving platform in the XY direction by the measurement result of the plurality of second laser interferometers, and the control device controls the platform driving circuit according to the detection result of the second detecting mechanism, The chuck is moved in the χγ direction by the second platform and the second flat chamber to position the substrate in the χγ direction. 3. The proximity exposure apparatus of claim 2, wherein: the third reflecting mechanism mounted on the chuck, and the laser length measuring system passes through the plurality of second lasers Interferometer, wherein the interference from the laser beam from the light source and the laser reflected by the third reflection mechanism is measured at a plurality of locations, and the second detecting mechanism is based on the plurality of second lasers of the laser length measuring system The displacement of the chuck is detected by the measurement result of the interferometer, and the first detecting means detects the displacement of the chuck detected by the second detecting means and the measurement result of the plurality of laser displacement meters a correction formula for correcting the measurement results of the plurality of laser displacement meters, and correcting the measurement results of the plurality of laser displacement meters by the prepared correction formula, and according to the corrected The measurement result of the plurality of laser materials is used to detect the inclination of the chuck in the Θ direction. 4. A substrate positioning method for a proximity exposure device, the proximity exposure 28 201035697 The optical device includes a chuck supporting the substrate and a mask holder for holding the mask, and a small gap is formed between the mask and the substrate to cover On the picture substrate of the cover, the receiving and exposing (four)-based missing branch is to build a disk on the mobile platform, the mobile platform has a first platform that moves in the Y direction, and is mounted on the i-th platform and to the seven-party platform. = (or X direction) the second platform to move, and the second platform to be mounted in the second; 計與上二多:動雷射位移計’將多個雷射位移 通過多個雷射位移計而在多處測定夹盤的位移, 根據測定結果來檢測夾盤在Θ方向上的斜度, 根據檢測結果,通過第3平臺而將夾盤向 以進行基板在Θ方向上的定位。 θ方向旋轉, 5.如申請專利範圍第4項所述的接近式曝光裝置 板定位方法,其中, 土 在第1平臺上安裝第1反射機構,Counting the second two: the dynamic laser displacement meter 'measured the displacement of the chuck at multiple locations by passing multiple laser displacements through multiple laser displacement meters, and detecting the inclination of the chuck in the Θ direction according to the measurement result, According to the detection result, the chuck is positioned by the third stage to perform the positioning of the substrate in the x-direction. The method of positioning a proximity exposure device according to claim 4, wherein the first reflective mechanism is mounted on the first platform, 在第2平臺上安裝第2反射機構, 通過第1雷射干涉儀,而對來自光源的雷射與由第工 反射機構所反射的雷射的干涉進行測定, 通過多個第2雷射干涉儀’而在多處對來自光源的雷 射與由第2反射機構所反射的雷射的干涉進行測定, 根據測定結果來檢測移動平臺在χγ方向上的位置, 根據檢測結果,通過第1平臺及第2平臺而將失盤向 ΧΥ方向移動,以進行基板在χγ方向上的定位。 。 29 201035697 曝光裝置的基 6.如申請專利範圍第5項所述的接近式 板定位方法,其中, 在夾盤上安裝第3反射機構, 通過多個第2雷射干涉儀,而在多處對來自光源的雷 射與由第3反射機構所反射的雷射的干涉進行測定「、 根據測定結果來檢測炎盤的位移, 根據檢測結果和多個雷射位移計的測定結果,掣作對 多個雷射位移§·]的測定結果進行修正的修正式,The second reflection mechanism is mounted on the second stage, and the interference between the laser beam from the light source and the laser reflected by the worker reflection mechanism is measured by the first laser interferometer, and the plurality of second laser interferences are detected. The instrument measures the interference between the laser beam from the light source and the laser reflected by the second reflection mechanism at a plurality of locations, and detects the position of the mobile platform in the χγ direction based on the measurement result, and passes the first platform according to the detection result. And the second platform moves the lost disk in the ΧΥ direction to position the substrate in the χγ direction. . The method of positioning the apparatus according to claim 5, wherein the third reflecting mechanism is mounted on the chuck, and the plurality of second laser interferometers are used in a plurality of places. The interference between the laser beam from the light source and the laser reflected by the third reflection mechanism is measured. "The displacement of the inflammation disk is detected based on the measurement result. Based on the detection result and the measurement results of the plurality of laser displacement meters, a modified version of the measurement result of the laser displacement §·] 通過製作成的修正式來對多個雷射位移計的測定结果 進行修正, u 根據修正後的多個雷射位移計的測定結果,來檢測夾 盤在Θ方向上的斜度。 、 7. —種顯示用面板基板的製造方法,其特徵在於,使 用如申請專利範圍第丨至3項巾任—項職的接近式曝光 裝置,來進行基板的曝光。The measurement results of the plurality of laser displacement meters are corrected by the prepared correction formula, and the inclination of the chuck in the x direction is detected based on the measurement results of the plurality of corrected laser displacement meters. 7. A method of manufacturing a panel substrate for display, characterized in that exposure of a substrate is performed using a proximity exposure apparatus as claimed in claims No. 3 to 3, respectively. 8· —種顯示用面板基板的製造方法,其特徵在於,使 用如申請專利朗第4至6項巾任-項所賴接近式曝光 裝置的基板定位方法來對基板進行定位,以進行基板的曝 光0 308. A method of manufacturing a panel substrate for display, characterized in that a substrate positioning method is used to position a substrate by using a substrate positioning method of a proximity exposure apparatus as claimed in the patent application No. 4 to 6 Exposure 0 30
TW099107138A 2009-03-16 2010-03-11 Proximity exposure device, substrate positioning method therefor, and produciton method of substrate for display TW201035697A (en)

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TWI660233B (en) * 2013-11-19 2019-05-21 日商Hoya股份有限公司 Photomask, method of manufacturing a photomask, pattern transfer method , method of manufacturing a display device and method of manufacturing a black matrix or a black stripe

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