TW201034049A - Particle reduction treatment for gas delivery system - Google Patents
Particle reduction treatment for gas delivery system Download PDFInfo
- Publication number
- TW201034049A TW201034049A TW099101681A TW99101681A TW201034049A TW 201034049 A TW201034049 A TW 201034049A TW 099101681 A TW099101681 A TW 099101681A TW 99101681 A TW99101681 A TW 99101681A TW 201034049 A TW201034049 A TW 201034049A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas distribution
- gas
- distribution plate
- slurry
- distribution device
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4998—Combined manufacture including applying or shaping of fluent material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Treating Waste Gases (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/356,687 US20100180426A1 (en) | 2009-01-21 | 2009-01-21 | Particle reduction treatment for gas delivery system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201034049A true TW201034049A (en) | 2010-09-16 |
Family
ID=42335784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099101681A TW201034049A (en) | 2009-01-21 | 2010-01-21 | Particle reduction treatment for gas delivery system |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20100180426A1 (https=) |
| JP (1) | JP2012516056A (https=) |
| KR (1) | KR20110115137A (https=) |
| CN (1) | CN102293062A (https=) |
| TW (1) | TW201034049A (https=) |
| WO (1) | WO2010090846A2 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10559451B2 (en) * | 2017-02-15 | 2020-02-11 | Applied Materials, Inc. | Apparatus with concentric pumping for multiple pressure regimes |
| US11380557B2 (en) | 2017-06-05 | 2022-07-05 | Applied Materials, Inc. | Apparatus and method for gas delivery in semiconductor process chambers |
| US11776793B2 (en) * | 2020-11-13 | 2023-10-03 | Applied Materials, Inc. | Plasma source with ceramic electrode plate |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3506885A (en) * | 1965-07-12 | 1970-04-14 | Brunswick Corp | Electric device having passage structure electrode |
| US4680897A (en) * | 1985-12-03 | 1987-07-21 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method for machining holes in composite materials |
| US5074456A (en) * | 1990-09-18 | 1991-12-24 | Lam Research Corporation | Composite electrode for plasma processes |
| JPH11104950A (ja) * | 1997-10-03 | 1999-04-20 | Shin Etsu Chem Co Ltd | 電極板及びその製造方法 |
| US6399499B1 (en) * | 1999-09-14 | 2002-06-04 | Jeong Gey Lee | Method for fabricating an electrode of a plasma chamber |
| JP3654142B2 (ja) * | 2000-01-20 | 2005-06-02 | 住友電気工業株式会社 | 半導体製造装置用ガスシャワー体 |
| US20020127853A1 (en) * | 2000-12-29 | 2002-09-12 | Hubacek Jerome S. | Electrode for plasma processes and method for manufacture and use thereof |
| US7479304B2 (en) * | 2002-02-14 | 2009-01-20 | Applied Materials, Inc. | Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate |
| JP2004149881A (ja) * | 2002-10-31 | 2004-05-27 | Applied Materials Inc | プラズマ処理装置及び方法 |
| JP4823639B2 (ja) * | 2005-01-19 | 2011-11-24 | グランデックス株式会社 | デバリング装置 |
| TWI284075B (en) * | 2005-08-31 | 2007-07-21 | Univ Nat Central | Grinding material spiral grinding device and method thereof |
| ES2534215T3 (es) * | 2006-08-30 | 2015-04-20 | Oerlikon Metco Ag, Wohlen | Dispositivo de pulverización de plasma y un método para la introducción de un precursor líquido en un sistema de gas de plasma |
| EP1895818B1 (en) * | 2006-08-30 | 2015-03-11 | Sulzer Metco AG | Plasma spraying device and a method for introducing a liquid precursor into a plasma gas system |
| US20080131622A1 (en) * | 2006-12-01 | 2008-06-05 | White John M | Plasma reactor substrate mounting surface texturing |
| CN100577866C (zh) * | 2007-02-27 | 2010-01-06 | 中微半导体设备(上海)有限公司 | 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法 |
-
2009
- 2009-01-21 US US12/356,687 patent/US20100180426A1/en not_active Abandoned
-
2010
- 2010-01-21 CN CN2010800052006A patent/CN102293062A/zh active Pending
- 2010-01-21 WO PCT/US2010/021557 patent/WO2010090846A2/en not_active Ceased
- 2010-01-21 TW TW099101681A patent/TW201034049A/zh unknown
- 2010-01-21 KR KR1020117019299A patent/KR20110115137A/ko not_active Ceased
- 2010-01-21 JP JP2011548081A patent/JP2012516056A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110115137A (ko) | 2011-10-20 |
| WO2010090846A3 (en) | 2010-10-28 |
| US20100180426A1 (en) | 2010-07-22 |
| WO2010090846A2 (en) | 2010-08-12 |
| CN102293062A (zh) | 2011-12-21 |
| JP2012516056A (ja) | 2012-07-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108346553B (zh) | 等离子体处理装置腔室主体内部清洁的等离子体处理方法 | |
| TW557473B (en) | Semiconductor processing equipment having improved particle performance | |
| TW202115278A (zh) | 反應器系統、處理基材表面之方法、及使用此方法所形成之結構 | |
| US7895970B2 (en) | Structure for plasma processing chamber, plasma processing chamber, plasma processing apparatus, and plasma processing chamber component | |
| KR102601706B1 (ko) | 기판들 및 챔버 컴포넌트들 상에서의 금속 실리사이드 층들의 증착 | |
| JP6100564B2 (ja) | 基板処理装置及び載置台 | |
| TWI618167B (zh) | 具有降低之腐蝕敏感度的製程套件 | |
| CN101102909B (zh) | 从用于等离子体处理设备的硅和碳化硅电极表面除去黑硅和黑碳化硅的方法 | |
| JP6277015B2 (ja) | プラズマ処理装置 | |
| TW200406839A (en) | A cathode pedestal for a plasma etch reactor | |
| CN101369518A (zh) | 通过脉冲vhf操作的等离子体类型和均匀性控制 | |
| TW201230890A (en) | Plasma processing apparatus and plasma control method | |
| JP2016522539A (ja) | 均一なプラズマ密度を有する容量結合プラズマ装置 | |
| US20030155078A1 (en) | Plasma processing apparatus, and electrode plate, electrode supporting body, and shield ring thereof | |
| JP2023529533A (ja) | 高性能コーティングが施された半導体チャンバ部品 | |
| TWI779052B (zh) | 供電構件及基板處理裝置 | |
| TWI622326B (zh) | Surface treatment method | |
| TW201034049A (en) | Particle reduction treatment for gas delivery system | |
| JP4123428B2 (ja) | エッチング方法 | |
| JP2016207788A (ja) | 上部電極の表面処理方法、プラズマ処理装置及び上部電極 | |
| JP4602528B2 (ja) | プラズマ処理装置 | |
| JP4154253B2 (ja) | プラズマ処理用シリコンプレート | |
| JP4054259B2 (ja) | プラズマ処理用シリコンプレート | |
| TW200908197A (en) | Surface processing method for mounting stage | |
| TWI849454B (zh) | 靜電吸盤、製作方法、翻新方法及等離子反應裝置 |