KR20110115137A - 가스 전달 시스템을 위한 입자 감소 처리 - Google Patents

가스 전달 시스템을 위한 입자 감소 처리 Download PDF

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Publication number
KR20110115137A
KR20110115137A KR1020117019299A KR20117019299A KR20110115137A KR 20110115137 A KR20110115137 A KR 20110115137A KR 1020117019299 A KR1020117019299 A KR 1020117019299A KR 20117019299 A KR20117019299 A KR 20117019299A KR 20110115137 A KR20110115137 A KR 20110115137A
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KR
South Korea
Prior art keywords
gas distribution
openings
distribution device
distribution plate
slurry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020117019299A
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English (en)
Korean (ko)
Inventor
데이비드 다통 후오
아이린 애이-린 슈
데이비드 쿤스
제니퍼 와이. 선
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20110115137A publication Critical patent/KR20110115137A/ko
Ceased legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/4998Combined manufacture including applying or shaping of fluent material

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Treating Waste Gases (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020117019299A 2009-01-21 2010-01-21 가스 전달 시스템을 위한 입자 감소 처리 Ceased KR20110115137A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/356,687 US20100180426A1 (en) 2009-01-21 2009-01-21 Particle reduction treatment for gas delivery system
US12/356,687 2009-01-21

Publications (1)

Publication Number Publication Date
KR20110115137A true KR20110115137A (ko) 2011-10-20

Family

ID=42335784

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117019299A Ceased KR20110115137A (ko) 2009-01-21 2010-01-21 가스 전달 시스템을 위한 입자 감소 처리

Country Status (6)

Country Link
US (1) US20100180426A1 (https=)
JP (1) JP2012516056A (https=)
KR (1) KR20110115137A (https=)
CN (1) CN102293062A (https=)
TW (1) TW201034049A (https=)
WO (1) WO2010090846A2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10559451B2 (en) * 2017-02-15 2020-02-11 Applied Materials, Inc. Apparatus with concentric pumping for multiple pressure regimes
US11380557B2 (en) 2017-06-05 2022-07-05 Applied Materials, Inc. Apparatus and method for gas delivery in semiconductor process chambers
US11776793B2 (en) * 2020-11-13 2023-10-03 Applied Materials, Inc. Plasma source with ceramic electrode plate

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3506885A (en) * 1965-07-12 1970-04-14 Brunswick Corp Electric device having passage structure electrode
US4680897A (en) * 1985-12-03 1987-07-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for machining holes in composite materials
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
JPH11104950A (ja) * 1997-10-03 1999-04-20 Shin Etsu Chem Co Ltd 電極板及びその製造方法
US6399499B1 (en) * 1999-09-14 2002-06-04 Jeong Gey Lee Method for fabricating an electrode of a plasma chamber
JP3654142B2 (ja) * 2000-01-20 2005-06-02 住友電気工業株式会社 半導体製造装置用ガスシャワー体
US20020127853A1 (en) * 2000-12-29 2002-09-12 Hubacek Jerome S. Electrode for plasma processes and method for manufacture and use thereof
US7479304B2 (en) * 2002-02-14 2009-01-20 Applied Materials, Inc. Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
JP2004149881A (ja) * 2002-10-31 2004-05-27 Applied Materials Inc プラズマ処理装置及び方法
JP4823639B2 (ja) * 2005-01-19 2011-11-24 グランデックス株式会社 デバリング装置
TWI284075B (en) * 2005-08-31 2007-07-21 Univ Nat Central Grinding material spiral grinding device and method thereof
ES2534215T3 (es) * 2006-08-30 2015-04-20 Oerlikon Metco Ag, Wohlen Dispositivo de pulverización de plasma y un método para la introducción de un precursor líquido en un sistema de gas de plasma
EP1895818B1 (en) * 2006-08-30 2015-03-11 Sulzer Metco AG Plasma spraying device and a method for introducing a liquid precursor into a plasma gas system
US20080131622A1 (en) * 2006-12-01 2008-06-05 White John M Plasma reactor substrate mounting surface texturing
CN100577866C (zh) * 2007-02-27 2010-01-06 中微半导体设备(上海)有限公司 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法

Also Published As

Publication number Publication date
WO2010090846A3 (en) 2010-10-28
TW201034049A (en) 2010-09-16
US20100180426A1 (en) 2010-07-22
WO2010090846A2 (en) 2010-08-12
CN102293062A (zh) 2011-12-21
JP2012516056A (ja) 2012-07-12

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