TW201024011A - Cutting apparatus and cutting method for manufacturing electronic component - Google Patents
Cutting apparatus and cutting method for manufacturing electronic component Download PDFInfo
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- TW201024011A TW201024011A TW098144638A TW98144638A TW201024011A TW 201024011 A TW201024011 A TW 201024011A TW 098144638 A TW098144638 A TW 098144638A TW 98144638 A TW98144638 A TW 98144638A TW 201024011 A TW201024011 A TW 201024011A
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- laser light
- substrate
- sealing substrate
- electronic component
- manufacturing
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- 238000005520 cutting process Methods 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 46
- 239000000758 substrate Substances 0.000 claims abstract description 207
- 238000007789 sealing Methods 0.000 claims abstract description 173
- 229920005989 resin Polymers 0.000 claims abstract description 37
- 239000011347 resin Substances 0.000 claims abstract description 37
- 239000000919 ceramic Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 230000001678 irradiating effect Effects 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000835 fiber Substances 0.000 claims description 4
- 238000005286 illumination Methods 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 claims description 3
- 238000005336 cracking Methods 0.000 abstract description 4
- 210000003128 head Anatomy 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 21
- 230000035882 stress Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 239000002131 composite material Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 210000003734 kidney Anatomy 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/389—Removing material by boring or cutting by boring of fluid openings, e.g. nozzles, jets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laser Beam Processing (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
201024011 六、發明說明： 【發明所屬之技術領域】 本發明’係關於藉由將具有複數個區域之密封基板按 照每一區域加以切斷，以製造複數個電子零件時所使用之 電子零件製造角之切斷裝置及切斷方法。 【先前技術】 習知，以有效率地製造複數個電子零件為目的所實施 ° 方式之一，如下所述。其係將裝配於電路基板之複數個晶 片電容器、LED晶片、半導體晶片等（以下稱為「晶片」） 整體進行樹脂密封而形成密封基板，藉由將該密封基板切 斷而單片化，以製造複數個電子零件之方式（例如，參照專 利文獻1)。根據專利文獻1，當切斷密封基板時，可使用切 割機（dicing saw)或利用雷射進行切割。又，將密封基板單 片化後之各電子零件，有時亦稱為封裝體（package)。 ❿ 再者，根據專利文獻1，可使用玻璃環氧樹脂作為電路 基板，可使用環氧樹脂、酚樹脂、或矽氧樹脂作為樹脂密 封所使用之密封樹脂。據此，電路基板與密封樹脂能以同 系統之材料、即樹脂系材料構成。因此，當使用旋轉刀刃 之切割機與雷射時，並未產生大問題。 近年來，作為電路基板，除了破璃環氧樹脂所代表之 樹脂基板以外，亦已開始使用基材為陶究所構成之基板（以 =稱為「陶瓷基板」）及基材為金屬所構成之基板（以下稱為 「金屬基板」）。由於陶瓷基板及金屬基板具有優異之散熱 201024011 特性’因此，被使用於LED、半導體雷射等光電零件、功 率半導體元件等。 然而’陶瓷基板及金屬基板之基材，其與密封樹脂之 性質不同。其結果，當使用雷射切斷具有陶瓷基板或金屬 基板之密封基板之虛擬切斷線時，會產生以下問題。 第1問題，係由於構成電路基板之材料熔融所形成之 浮渣容易附著於封裝體’因顧慮到外觀品質而有良率降低 之問題。第2問題，係使用陶瓷基板作為電路基板時之問 題。此係因施加於陶瓷基板之熱衝擊而產生内部應力，尤 其在1條切斷線於切斷即將結束之前，會有因内部應力所 致之陶竟基板的破裂及碎屑（chipping)的產生。 (專利文獻1)曰本特開平09—036151號公報（第3頁， 圖2)。 【發明内容】 本發明所要解決之課題，係於利用雷射切斷包含由陶 瓷基板或金屬基板所構成之電路基板之密封基板時，用以 防止浮渣附著於密封基板以及因内部應力所致之陶瓷基板 的破裂及碎屑的產生。 於以下之說明中之括弧内之數字、符號，係表示圖式 中之符號’其係為使說明之用語與圖式所示之構成要件容 易對比之目的而記載。X，該等符號，並不是表示「將說 明之用語限定於圖式所示之構成要件而加以解釋」之意。 為解決上述課題，本發明之電子零件製造用之切斷裝 201024011 又，本發明之電子零件製造用之切斷裝置，係用於將 分別安裝在設於電路基板（2)之複數個區域（7)之晶片（3)以 樹脂密封而形成密封基板（1) ’藉由沿複數個區域之境界 線（6)切斷密封基板（1)以製造複數個電子零件，具備用以將 密封基板（1)固定之固定手段（8)、用以產生雷射光（12、18) 之雷射光產生手段（11)、以及用以使密封基板（1)及/或雷射 ❹ ❹ 光（12、18)彼此相對移動之移動手段（9)，其特徵在於： 雷射光產生手段（11)，係產生用以於境界線（6)形成齒孔 狀之孔（17、19)之第1雷射光（12)，以及用以於形成有齒孔 狀之孔（17、19)之境界線（6)切斷密封基板（1)之第2雷射光 (18) ° 置，於一態樣 雷射光（18)係 又，本發明之電子零件製造用之切斷農 中’該第1雷射光（12)係呈脈衝狀，且該第2 連續光。 又，本發明之電子零件製造用之切斷袭置，於一態樣 中，該雷射光產生手段⑴），具有光纖雷射振後器或削 雷射振盪·器。 又，本發明之電子零件製造用之切斷裝置，於 中，該齒孔狀之孔（17、19)係貫穿孔（17)。 又，本發明之電子零件製造用之切斷 中，該齒孔狀之孔（17、19)係不貫穿孔（19)。，於一態樣 又，本發明之電子零件製造用之切 中，該電路基板（2)之基材係陶究或金屬。’於一態樣 201024011 中 又’本發明之電子零件製造用之切斷裝置，於 該電子零件係光電零件或功率半導體零件。 態樣 又，本發明之電子零件製造用之切斷方法，係用於將 分別安裝在設於電路基板（2)之複數個區域（乃之晶片（3)以 樹脂密封而形成密封基板⑴，#由沿複數個區域（日7)之㈣ 線（6)切斷密封基板（1)以製造複數個電子零件，其具備用以 將密封基板⑴固定之固定步驟’以及一邊對密封基板⑴照 射雷射光（12、18)、-邊彼此相對移動密封基板⑴及/或雷 射光（12、18)之照射步驟’其特徵在於： 於該照射步驟，係藉由對密封基板⑴照射第1雷射光 (12)以於境界線（6)形成齒孔狀之孔〇7、19)後，藉由對境界 線（6)照射第2雷射光（18)以切斷密封基板（〗）。 又，本發明之電子零件製造用之切斷方法，於一態樣 中，該第1雷射光（12)係呈脈衝狀，且該第2雷射光（丨8)係 連績光。 又’本發明之電子零件製造用之切斷方法，於一態樣 中’該照射步驟’係藉由光纖雷射振盪器或YAG雷射振盪 器以產生第1雷射光（12)及第2雷射光（18)。 又’本發明之電子零件製造用之切斷方法，於一態樣 中’ s玄齒孔狀之孔（1 7、1 9)係貫穿孔（1 7)。 又’本發明之電子零件製造用之切斷方法，於一態樣 中’該齒孔狀之孔（1 7、1 9)係不貫穿孔（1 9)。 又’本發明之電子零件製造用之切斷方法，於一態樣 中，該電路基板（2)之基材係陶瓷或金屬。 201024011 又’本發明之電子零件製造用之切斷方法，於一態樣 中°亥電子零件係光電零件或功率半導體零件。 [發明之效果] 依本發明，在密封基板⑴之境界線⑹，使用第！雷射 光（12)以形成齒孔狀之孔（17、19)後，使用第2雷射光⑽ 切斷卿叫。此時，於形成齒孔狀之孔（17、19)時所去除 之部分的體積與藉由其後之切斷⑽！叫所去除之部分的 冑積之和，係如習知般相等於以i次雷射光照射而完全切 罾斷密封基板⑴時所去除之部分的體積。換言之，藉由本發 明之2次各照射而自密封基板⑴所去除之各部分的體積， 皆小於習知之藉由i次照射而切斷密封基板⑴時自密封基 板⑴所去除之部分的體積。如此，本發明，由於每一次： 雷射照射所去除之部分的體積較小，因此於各照射所產生 之浮渣量會變少，尤其因照射第2雷射光時之浮渣產生量 少，故於最後附著於切斷部之浮渣量少。又，若於各雷射 ❹賤之浮渣量少，則於雷射照射中制氣體噴射等可容易 ^除浮^因此’於切斷密封基板⑴時可抑制浮;查附著於 密封基板（1)，並可獲得切斷面之良好切斷品質。 又，依本發明，當密封基板⑴包含陶曼基板之情形， 將使用第1雷射光而形成有齒孔狀之孔（17、19)之密封基板 ⑴使用第2雷射光加以切斷。如此，於待切斷之部位預 先形成齒孔狀之孔（17、19)’藉此’切斷時能以較短時間完 成切斷。又’藉由齒孔狀之孔(17、19)，可使切斷部附近的 表面積變大’因此，易於將雷射照射所產生之熱釋出。藉 201024011 此，熱難以蓄積於齒孔狀之孔（17、19)附近，可緩和因第2 雷射光照射所產生之熱應力，尤其可減少陶瓷基板所承受 之應力。因此，可抑制因内部應力所致之陶瓷基板的破裂 及碎屑的產生。 【實施方式】 本發明之電子零件製造用之切斷方法，係用於將在電 路基板（2)所設置之複數個區域（7)分別裝配之晶片（3)，藉由 樹脂密封而形成密封基板（1)，藉由沿複數個區域（7)之境界 線（6)切斷密封基板（1)，以製造複數個電子零件；其具傷： 用以將密封基板（1)固定於工作台9之固定步驟，以及—邊 從照射頭（10)朝密封基板（1)照射第1雷射光（12)或第2雷射 光（18)、一邊彼此相對移動照射頭（1〇)及/或密封基板（1)之 照射步驟。於照射步驟，藉由照射第丨雷射光（12)，於境界 線（6)形成齒孔狀之孔（17)後，藉由對境界線（6)照射第2雷 射光（18)以切斷密封基板（1)。 (實施例1)201024011 VI. Description of the Invention: [Technical Field] The present invention relates to an electronic component manufacturing angle used for manufacturing a plurality of electronic components by cutting a sealing substrate having a plurality of regions in accordance with each region Cutting device and cutting method. [Prior Art] Conventionally, one of the modes of the method for efficiently manufacturing a plurality of electronic components is as follows. In this case, a plurality of wafer capacitors, LED chips, semiconductor wafers, and the like (hereinafter referred to as "wafers") mounted on a circuit board are resin-sealed to form a sealing substrate, and the sealing substrate is cut into pieces to be singulated. A method of manufacturing a plurality of electronic components (for example, refer to Patent Document 1). According to Patent Document 1, when the sealing substrate is cut, cutting can be performed using a dicing saw or using a laser. Further, each electronic component in which the sealing substrate is diced is sometimes referred to as a package. Further, according to Patent Document 1, a glass epoxy resin can be used as the circuit substrate, and an epoxy resin, a phenol resin, or a silicone resin can be used as the sealing resin used for the resin sealing. According to this, the circuit board and the sealing resin can be made of the same material, that is, a resin material. Therefore, when a cutter with a rotating blade and a laser are used, no major problem occurs. In recent years, as a circuit board, in addition to the resin substrate represented by the glass epoxy resin, a substrate made of a ceramic substrate (referred to as "ceramic substrate") and a substrate made of metal have been used. The substrate (hereinafter referred to as "metal substrate"). Since the ceramic substrate and the metal substrate have excellent heat dissipation 201024011 characteristics, they are used for photovoltaic components such as LEDs and semiconductor lasers, and power semiconductor devices. However, the substrate of the ceramic substrate and the metal substrate is different from the properties of the sealing resin. As a result, when the virtual cutting line of the sealing substrate having the ceramic substrate or the metal substrate is cut by laser, the following problem occurs. The first problem is that the scum formed by the melting of the material constituting the circuit board is likely to adhere to the package, and the yield is lowered due to the consideration of the appearance quality. The second problem is a problem when a ceramic substrate is used as a circuit board. This causes internal stress due to the thermal shock applied to the ceramic substrate. In particular, before the end of the cutting of one cutting line, there is a crack and chipping of the ceramic substrate due to internal stress. . (Patent Document 1) JP-A-H09-036151 (page 3, Fig. 2). SUMMARY OF THE INVENTION The problem to be solved by the present invention is to prevent scum from adhering to a sealing substrate and internal stress caused by cutting a sealing substrate including a circuit board composed of a ceramic substrate or a metal substrate by laser. The rupture of the ceramic substrate and the generation of debris. In the following description, the numerals and symbols in parentheses indicate the symbols in the drawings, which are described for the purpose of making the terms of the description easier to compare with the constituent elements shown in the drawings. X, these symbols do not mean to "explain the terms of the description to the constituent elements shown in the schema". In order to solve the above problems, the cutting device for manufacturing an electronic component according to the present invention is 201024011. The cutting device for manufacturing an electronic component according to the present invention is used for mounting in a plurality of regions provided on the circuit board (2). 7) The wafer (3) is sealed with a resin to form a sealing substrate (1) 'The sealing substrate (1) is cut by a boundary line (6) along a plurality of regions to manufacture a plurality of electronic components, which are provided for sealing the substrate (1) a fixed fixing means (8), a laser light generating means (11) for generating laser light (12, 18), and a sealing substrate (1) and/or a laser beam (12, 18) A moving means (9) for moving relative to each other, characterized in that: the laser light generating means (11) generates a first laser light for forming a perforated hole (17, 19) in the boundary line (6). (12), and the second laser light (18) for cutting the sealing substrate (1) on the boundary line (6) for forming the perforated hole (17, 19), in a state of laser light (18) Further, in the manufacture of an electronic component according to the present invention, the first laser light (12) is pulsed, and The second continuous light. Further, in the aspect of the electronic component manufacturing of the present invention, in the aspect of the invention, the laser light generating means (1)) has an optical fiber laser rear oscillating device or a laser oscillating oscillating device. Further, in the cutting device for manufacturing an electronic component according to the present invention, the perforated hole (17, 19) is a through hole (17). Further, in the cutting for the manufacture of the electronic component of the present invention, the perforated hole (17, 19) does not penetrate the hole (19). Further, in the manufacture of the electronic component of the present invention, the substrate of the circuit substrate (2) is ceramic or metal. In the case of the invention, the cutting device for manufacturing an electronic component according to the present invention is an electronic component or a power semiconductor component. Further, the cutting method for manufacturing an electronic component according to the present invention is for separately mounting on a plurality of regions provided in the circuit board (2) (the wafer (3) is sealed with a resin to form a sealing substrate (1), #The sealing substrate (1) is cut by a (4) line (6) along a plurality of areas (day 7) to manufacture a plurality of electronic parts having a fixing step for fixing the sealing substrate (1) and irradiating the sealing substrate (1) The step of irradiating the sealing substrate (1) and/or the laser light (12, 18) relative to each other by moving the laser light (12, 18) and the side, wherein the irradiation step is performed by irradiating the sealing substrate (1) with the first thunder After the light (12) forms the perforated holes 7 and 19) in the boundary line (6), the second laser light (18) is irradiated to the boundary line (6) to cut the sealing substrate (〗). Further, in the cutting method for manufacturing an electronic component according to the present invention, in the first aspect, the first laser light (12) is pulsed, and the second laser light (?8) is continuous light. Further, the cutting method for manufacturing an electronic component according to the present invention, in one aspect, the 'illuminating step' is to generate a first laser light (12) and a second by a fiber laser oscillator or a YAG laser oscillator. Laser light (18). Further, the cutting method for manufacturing an electronic component according to the present invention is a through hole (17) in which the 's sinusoidal hole (17, 19) is in one aspect. Further, the cutting method for manufacturing an electronic component according to the present invention is such that the perforated hole (17, 19) does not penetrate the hole (19). Further, in the method for cutting an electronic component according to the present invention, the substrate of the circuit board (2) is ceramic or metal. 201024011 Further, the cutting method for manufacturing an electronic component according to the present invention is an optoelectronic component or a power semiconductor component in an electronic component. [Effects of the Invention] According to the present invention, the boundary line (6) of the sealing substrate (1) is used! After the laser light (12) is formed into a perforated hole (17, 19), the second laser light (10) is used to cut off the squeak. At this time, the volume of the portion removed when the perforated holes (17, 19) are formed is cut off by the subsequent (10)! The sum of the hoardings of the removed portions is as conventionally equivalent to the volume of the portion removed when the sealing substrate (1) is completely cut by irradiation with i-th laser light. In other words, the volume of each portion removed from the sealing substrate (1) by the two irradiations of the present invention is smaller than the volume of the portion removed from the sealing substrate (1) when the sealing substrate (1) is cut by i-irradiation. As described above, in the present invention, since the volume of the portion removed by the laser irradiation is small, the amount of dross generated by each irradiation is reduced, and in particular, the amount of dross generated when the second laser beam is irradiated is small. Therefore, the amount of dross attached to the cut portion at the end is small. Further, if the amount of dross in each of the laser beams is small, the gas jet or the like can be easily removed during the laser irradiation, so that the floating of the sealing substrate (1) can be suppressed; the adhesion to the sealing substrate can be checked. 1), and the good cutting quality of the cut surface can be obtained. Further, according to the present invention, when the sealing substrate (1) includes the Tauman substrate, the sealing substrate (1) in which the perforated holes (17, 19) are formed using the first laser light is cut by using the second laser light. In this manner, the perforated holes (17, 19) are formed in advance at the portion to be cut, whereby the cutting can be completed in a short time. Further, by the perforated holes (17, 19), the surface area in the vicinity of the cut portion can be increased. Therefore, it is easy to release the heat generated by the laser irradiation. With 201024011, it is difficult for heat to accumulate near the perforated holes (17, 19), which can alleviate the thermal stress caused by the second laser light irradiation, and in particular, reduce the stress on the ceramic substrate. Therefore, cracking of the ceramic substrate due to internal stress and generation of debris can be suppressed. [Embodiment] The method for cutting an electronic component according to the present invention is for forming a wafer by sealing a wafer (3) mounted in a plurality of regions (7) provided on a circuit board (2) by resin sealing. The substrate (1) is formed by cutting the sealing substrate (1) along the boundary line (6) of the plurality of regions (7) to manufacture a plurality of electronic components; the damage is: for fixing the sealing substrate (1) to work The step of fixing the stage 9 and moving the head (1〇) and/or the first laser light (12) or the second laser light (18) from the irradiation head (10) toward the sealing substrate (1) Or the step of illuminating the substrate (1). In the irradiation step, after the pupil laser light (12) is irradiated, the perforation-like hole (17) is formed in the boundary line (6), and the second laser light (18) is irradiated to the boundary line (6). Seal the sealing substrate (1). (Example 1)
’所謂「齒孔狀之孔」，係指隔 其包含貫穿孔與不貫穿孔。 201024011 . 如圖1所示，密封基板1，具有：電路基板2、構裝於 -電路基板2之複數個晶片3、及將複數個晶片3整體覆蓋而 形成之密封樹脂4^於圖丨中，使用陶瓷基板或金屬基板作 為電路基板，使用具有透光性之矽氧樹脂作為密封樹脂4， 使用LED晶片作為晶片3。因此，密封基板卜亦可謂由陶 瓷基板或金屬基板與樹膠所構成之複合材料。又，金屬基 板中包含金屬芯基板、金屬座基板、及琺瑯基板。 密封樹脂4具有分別與晶片3對應之透鏡部5。密封基 板1，藉由格子狀之境界線6區隔成複數個區域7。藉此， 各境界線6係以線段構成。因此，各區域7的形狀為長方 形（3正方形）。又，圖！係表示於複數個區域7分別裝配有 1個晶片3之例。 又，圖1係表示透鏡部5構成凸透鏡，透鏡部5與晶 片3係以1對1方式對應之例。惟未限於此，透鏡部$只 要是具有光會聚功能、設成平行光之功能、或擴散功能'的 _纟卩可X it鏡# 5’可具有複數個透鏡、菲淫耳透鏡 (Fresnel lens)等。 密封基板1，係透過膠帶8而固定於工作台9。工作台 9’係設置成可移動於圖中所示之χ方向、γ方向、及^ 向，且可旋轉於θ方向。於密封基板1上方配置有照射頭 1〇。於該照射頭1〇,以光學接觸之方式設置有雷射_ 11。照射頭Η)’亦可將雷射_ η所產生之雷射光作為 第1雷射光12朝密封基板1照射。X，照射頭10,亦可將 雷射振盪器11所產生之雷射光作為第2雷射光(後述)朝密 9 201024011 封基板1照射。在此，雷射振盪器丨丨可產生第丨雷射光 與第2雷射光。又’ si雷射光i2係呈脈衝狀第2雷射 光係連續光。 於’、’、射頭10设置配管13，經由該配管13輔助氣體 (assist gas) 14供應於照射頭1〇内部。於照射頭1〇下部設 置有喷嘴15。自該喷嘴15朝密封基板i之被照射部16照 射第1雷射光12且喷射出辅助氣體14。 以下，參照圖1與圖2，說明本發明之電子零件製造用 之切斷裝置的動作。圖2 (1)係表示本實施例之電子零件製❹ 造用之切斷裝置於密封基板形成齒孔狀之貫穿孔的狀態之 截面圖’ SI 2(2)係表示形成有貫穿孔之密封基板之截面圖； 圖2(3)係表示將密#基板切斷㈣態之截面圖。 首先，如圖1與圖2(丨）所示，一邊將脈衝狀之第1雷 射光12朝密封基板1之境界線6照#，一邊相對於照射頭 1〇將工作台9移動於圖之+ X方向。又，朝密封基板】之 境界線6照射第i雷射光12且噴射輔助氣體14。藉由喷射 辅助氣體14’可將產生之浮潰0欠走去除。帛i雷射光^之❹ 照射條件’係預設成可於複合材料之密封基板i形成貫穿 孔。藉此，如圖2(2)所示，可於密封基板t之境界線6之 中沿X方向之"条境界線6,形成由貫穿孔構成之齒孔狀之 孔17。 其次，於密封基1之境界線6之中沿χ方向之全部 剩餘境界纟6,形成由貫穿孔構成之齒孔狀之孔17。藉此， 可於境界線6之中沿X方向之全部境界線6，形成由貫穿孔 10 201024011 構成之齒孔狀之孔1 7。 其次，於格子狀之境界線6之中沿γ方向 J < *兄界線6， 形成由貫穿孔構成之齒孔狀之孔17。具體而^ 丹菔而δ，—邊對沿 Υ方向之1條境界線6照射第1雷射光i 2 , —、Α上 —逯相對於照 射頭10將工作台9移動於圖之+ Υ(或—γ)方向。接著，於 密封基板！之境界線6之中沿Υ方向之全部剩餘境界線6 形成由貫穿孔構成之齒孔狀之孔17。藉由至目前為止之步The term "perforated hole" means that the through hole and the non-through hole are included. 201024011. As shown in FIG. 1, the sealing substrate 1 has a circuit board 2, a plurality of wafers 3 mounted on the circuit board 2, and a sealing resin formed by covering a plurality of wafers 3 as a whole. A ceramic substrate or a metal substrate is used as the circuit substrate, a translucent epoxy resin is used as the sealing resin 4, and an LED wafer is used as the wafer 3. Therefore, the sealing substrate can also be referred to as a composite material composed of a ceramic substrate or a metal substrate and a gum. Further, the metal substrate includes a metal core substrate, a metal base substrate, and a tantalum substrate. The sealing resin 4 has lens portions 5 corresponding to the wafers 3, respectively. The sealing substrate 1 is partitioned into a plurality of regions 7 by a grid-like boundary line 6. Thereby, each boundary line 6 is constituted by a line segment. Therefore, the shape of each of the regions 7 is a rectangular shape (3 squares). Again, the picture! An example is shown in which a plurality of wafers 3 are mounted in a plurality of regions 7 respectively. Further, Fig. 1 shows an example in which the lens portion 5 constitutes a convex lens, and the lens portion 5 and the wafer 3 correspond to each other in a one-to-one manner. However, the lens portion $ may have a function of a light concentrating function, a function of providing parallel light, or a diffusion function, and may have a plurality of lenses and a Fresnel lens. )Wait. The sealing substrate 1 is fixed to the table 9 through the tape 8 . The table 9' is arranged to be movable in the χ direction, the γ direction, and the direction shown in the drawing, and is rotatable in the θ direction. An irradiation head 1 is disposed above the sealing substrate 1. At the illumination head 1 , a laser _ 11 is provided in optical contact. The laser light generated by the laser beam _ can also be irradiated as the first laser light 12 toward the sealing substrate 1. X, the irradiation head 10, or the laser light generated by the laser oscillator 11 may be irradiated as the second laser light (described later) toward the sealed substrate 1 of the 201012. Here, the laser oscillator 产生 can generate the second laser light and the second laser light. Further, the "si laser light i2" is a pulsed second laser light continuous light. A pipe 13 is provided in the ', ' and the head 10, and an assist gas 14 is supplied to the inside of the head 1 through the pipe 13. A nozzle 15 is provided at a lower portion of the head 1 . The first laser light 12 is irradiated from the nozzle 15 toward the irradiated portion 16 of the sealing substrate i, and the assist gas 14 is ejected. Hereinafter, the operation of the cutting device for manufacturing an electronic component according to the present invention will be described with reference to Figs. 1 and 2 . Fig. 2 (1) is a cross-sectional view showing a state in which a cutting device for manufacturing an electronic component according to the present embodiment forms a perforated through hole in a sealing substrate. SI 2 (2) shows a seal in which a through hole is formed. A cross-sectional view of the substrate; Fig. 2 (3) is a cross-sectional view showing a state in which the dense substrate is cut (four). First, as shown in FIG. 1 and FIG. 2 (丨), while the pulsed first laser light 12 is directed toward the boundary line 6 of the sealing substrate 1, the table 9 is moved to the figure with respect to the irradiation head 1〇. + X direction. Further, the i-th laser light 12 is irradiated toward the boundary line 6 of the sealing substrate, and the assist gas 14 is ejected. The resulting sag 0 can be removed by spraying the assist gas 14'.帛i laser light ❹ The irradiation condition is preset to form a through hole in the sealing substrate i of the composite material. As a result, as shown in Fig. 2 (2), a perforated hole 17 formed of a through hole can be formed along the boundary line 6 in the X direction in the boundary line 6 of the sealing substrate t. Next, in the boundary boundary line 6 of the seal base 1, all the remaining boundary points 纟6 in the χ direction form a perforated hole 17 formed of a through hole. Thereby, a perforated hole 17 composed of the through hole 10 201024011 can be formed in all the boundary lines 6 in the X direction among the boundary lines 6. Next, a perforated hole 17 formed of a through hole is formed in the gamma-direction boundary line 6 along the γ direction J < Specifically, ^ 菔 菔, δ, 边 照射 第 1 1 1 1 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第Or - γ) direction. Next, seal the substrate! All of the remaining boundary lines 6 along the Υ direction among the boundary lines 6 form a perforated hole 17 formed by the through holes. With the steps so far
驟，可於密封基板1之全部境界線6,形成由貫穿孔構成之 齒孔狀之孔17。 又，如圖2(3)所示，-邊將連續之第2雷射a 18朝密 封基板1之境界線6照射，一邊相對於照射頭1〇將工作台 9移動於圖之+ X方向。又，朝密封基板i之境界線6照射 第2雷射光18且噴射輔助氣體14(參照圖丨）。第2雷射光 18之照射條件，係預設成可將形成有由貫穿孔構成之齒孔 狀之孔17之密封基板1完全切斷。藉此，可於密封基板i 之境界線6之中沿X方向之i條境界線6，完全切斷密封基 板1。 其次’於密封基板1之境界線6之中沿χ方向之全部 剩餘境界線6，完全切斷（full cut)密封基板i。 其次，於格子狀之境界線6之中沿γ方向之全部境界 線6’完全切斷密封基板1。具體而言，一邊對沿Y方向之 1條境界線6照射第2雷射力18，一邊相對於照射頭1〇將 工作台9移動於圖之+ γ(或_γ)方向。接著，於㈣基板】 之境界線6之_沿Υ方向之全部剩餘境界線6，切斷密封基 201024011 ，可於全部境界線 可於與複數個區域 6切斷密封 7分別對應 板1。藉由至目前為止之步驟 基板1。因此，密封基板1， 之複數個封裝體予以單片化。 依本實施例，可獲得以下效果，…果，係於切斷 密封基板1時可抑制浮逢的產生。在本實施例中，藉由斷2 次照射而自密封基1去除之各部分的體積，分別小於藉 由1次照射切斷密封基板1 _自該密封基板去除之部分的 體積。藉此，因2次照射而分別於密封基板【熔融的部分，In this way, a perforated hole 17 formed of a through hole can be formed on all the boundary lines 6 of the sealing substrate 1. Further, as shown in Fig. 2 (3), while the continuous second laser a 18 is irradiated toward the boundary line 6 of the sealing substrate 1, the table 9 is moved in the +X direction with respect to the irradiation head 1 . Further, the second laser light 18 is applied to the boundary line 6 of the sealing substrate i, and the assist gas 14 is injected (see Fig. 。). The irradiation condition of the second laser light 18 is preset to completely cut the sealing substrate 1 on which the hole 17 formed of the through hole is formed. Thereby, the sealing substrate 1 can be completely cut off along the i boundary line 6 in the X direction among the boundary lines 6 of the sealing substrate i. Next, the sealing substrate i is completely cut off from all the remaining boundary lines 6 in the x direction in the boundary line 6 of the sealing substrate 1. Next, the sealing substrate 1 is completely cut in all the boundary lines 6' in the γ direction among the grid-like boundary lines 6. Specifically, while the second laser force 18 is applied to one boundary line 6 in the Y direction, the table 9 is moved in the + γ (or _γ) direction with respect to the irradiation head 1 。. Then, the sealing base 201024011 is cut off at all the remaining boundary lines 6 in the Υ direction of the boundary line 6 of the (four) substrate, and the sealing plate 7 can be cut off from the plurality of regions 6 at all the boundary lines. With the steps up to now, the substrate 1. Therefore, the plurality of packages of the sealing substrate 1 are singulated. According to this embodiment, the following effects can be obtained, so that the generation of the floating square can be suppressed when the sealing substrate 1 is cut. In the present embodiment, the volume of each portion removed from the sealing substrate 1 by the two irradiations is smaller than the volume of the portion of the sealing substrate 1 removed from the sealing substrate by one irradiation. Thereby, the molten portion is respectively sealed on the sealing substrate by the second irradiation.
可藉由輔助氣體而容易去除。因此，可抑制切斷密封基板！ 時浮渣附著於密封基板i。 第2效果，可獲得切斷面之良好切斷品質。如上述， 因2次照射而分別於密封基板}熔融的部分，可藉由辅助 氣體而容易纟除。目&，於製成《電子零件之切斷面可獲 得良好之切斷品質。 第3效果，於使用陶瓷基板作為電路基板時，可抑制 因内部應力所致之陶瓷基板的破裂及碎屑的產生。在本實 施例’將使用脈衝狀之雷射而形成有齒孔狀之孔17之密封 ❹ 基板1 ’使用連續之雷射予以切斷。藉此，於齒孔狀之孔 17附近’可緩和因照射連續之雷射所產生之熱應力。藉此， 可減少於齒孔狀之孔17附近密封基板1所承受之應力，尤 其是由陶瓷基板構成之電路基板2所承受之應力。因此， 可抑制因内部應力所致之電路基板2的破裂及碎屑的產生。 又’在本實施例，齒孔狀之孔17之孔徑及孔中心彼此 之間隔（中心彼此之間距），係取決於第1雷射光12之照射 12 201024011 條件°照射條件’係指例如雷射之種類、能量、頻率、負 載（dUty)比、照射徑、卫作台9之移動速度，辅助氣體之種 類及壓Θ ° X ’齒孔狀之孔i 7之孔徑及孔中心、彼此之間 隔係預-又成可藉由照射第2雷射光18而將形成有齒孔狀 之孔1 7之密封基板1穿冬h堪t 丞极凡王切斷。又，本實施例，可視密封 樹月曰4及電路基板2之材質、厚度等而適當設定齒孔狀之 孔1 7之孔徑及孔中〜彼此之間隔’藉此，可適用於各種規 格之電路基板2。 在本發明’為照射第i雷射光i 2而使用yag雷射(例 如，波長1〇64nm)、光纖雷射（例如，波長i〇7〇nm)等。又， 脈衝狀之雷射光之照射條件係設成能量為2講、工作台9 之移動速度為3〇Gmm/see，連續之雷射光之照射條件係設成 能量為300W、工作台9之移動速度為i5〇—藉由將 能量設成（連續之雷射光之能量）>(脈衝狀之雷射光之能 量）’將工作台9之移動速度設成（連續之雷射光之移動速度） >(脈衝狀之雷射光之移動速度），可於切斷部分 切斷品質。 (實施例2) 參照圖3’說明本發明之電子零件製造用之切斷裝置之 =例^圖3⑴係表*本實施.電子零件製造用之切斷 裝置於社、封基板形成齒孔狀之不書 _ 頁穿孔的狀態之截面圖； 圖3 (2)係表示形成有齒孔狀之不書空π 只牙孔之密封基板之巷而 圖；圊3(3)係表示將密封基板切斷的狀態之截面圖。 在本實施例’首先，如圖一 J所不’一邊將脈衝狀之 13 201024011 昭μ雷射光12朝密封基板1之境界線6照射，—邊相對於 、、'昭頭10將工作台9移動於圖之+ x方向。第1雷射光12 、、射條件，係預設成可於複合材料之密封基板1形成不 :穿=°藉此’如圖3(2)所示’可於密封基板1之境界線6 之中& X方向之1條境界線6，形成由不貫穿孔構成之 狀之孔H 礼 其人，於密封基板丨之境界線6之中沿χ方向之全部 剩餘境界線6 ’形成由不貫穿孔構成之齒孔狀之孔Μ。藉 =可於i兄界線6之中沿X方向之全部境界線6，形成由不 貫穿孔構成之齒孔狀之孔19。 /其次，於格子狀之境界線6之中沿Y方向之境界線6， 形成由不貫穿孔構成之齒孔狀之孔19。 其_人，如圖3(3)所示，一邊將連續之第2雷射光“朝 狁封基板1之境界線6照射，一邊相對於照射頭10將工作 台9移動於圖之+ χ方向。藉此，可於密封基板^境界線 之中/〇 X方向之1條境界線6，完全切斷密封基板1。 其次，於密封基板〗之境界線6之中沿χ方向之全部 剩餘境界線6，完全切斷密封基板j。 其次，於格子狀之境界線6之中沿γ方向之全部境界 線6,完全切斷密封基板1。藉由至目前為止之步驟，可於 全部境界、線6切斷密封基板i。目此，㈣基板i，可於與 複數個區域7分別對應之複數個封裝體予以單片化。 本實施例之特徵在於，將脈衝狀之第丨雷射光12朝密 封基板i之境界線6照射，藉此形成由不貫穿孔構成之齒 201024011 孔狀之孔19。該等齒孔狀之孔19，於密封樹脂4側具有開 口’且於電路基板2具有内底面。換言之，齒孔狀之孔19, 係於密封基板1之厚度方向形成從密封樹脂4側至電路基 板2之途中為止。又，與實施例丨之情形同樣，齒孔狀之 孔19之孔徑、深度及孔中心彼此之間隔（中心彼此之間 距），係取決於第1雷射光12之照射條件。又，齒孔狀之孔 19之孔徑、深度及孔中心彼此之間隔，係預設成可藉由照 射第2雷射光18而將形成有齒孔狀之孔19之密封基板i © 完全切斷。 依本實施例’可獲得與實施例1同樣之效果。又，本 實施例，可視密封樹脂4及電路基板2之材質、厚度等而 適當設定齒孔狀之孔丨9之孔徑、深度及孔中心彼此之間 隔’藉此’可適用於各種規格之電路基板2。 (實施例3) 參照圖4 ’說明本發明之電子零件製造用之切斷裝置之 ⑩ 實施例3。圖4(1)係表示本實施例之電子零件製造用之切斷 裝置於密封樹脂形成槽的狀態之截面圖；圖4(2)係表示將 齒孔狀之貫穿孔形成於電路基板的狀態之截面圖；圖4(3) 係表示該切斷裝置切斷密封基板的狀態之截面圖。 在本實施例，首先，如圖4(1)所示，使用旋轉刀刃20， 於密封基板之密封樹脂4形成槽。在圖4(1) ’係表示藉由 將工作台9移動於—X方向（左方向），以於旋轉刀刃2〇左 側形成槽（無符號）的樣子。又，在圖4(1 )，為易於理解，將 旋轉刀刃20縮小表示。 15 201024011 其次，如圖4(2)所示，於密封基板丨之境界線6之中 〜X方向之1條境界線6，將第1雷射光12照射於電路基 板2«藉此，將由貫穿孔構成之齒孔狀之孔21形成於電路 基板2。接著，於密封基板丨之全部境界線6，將由貫穿孔 構成之齒孔狀之孔21形成於電路基板2。 其次，如圖4(3)所示，一邊將連續之第2雷射光18朝 密封基板1之境界線6之電路基板2照射，一邊相對於照 射頭10(參照圖1)將工作台9移動於圖之+ χ方向。藉此， 可於岔封基板1之境界線6之中沿X方向之丨條境界線6， 完全切斷密封基板1。其後，於密封基板丨之境界線6之中 沿X方向之全部剩餘境界線6，完全切斷密封基板丨。接著， 於密封基板1之境界線6之中沿γ方向之全部境界線6，完 全切斷密封基板1。 依本實施例，可獲得與實施例丨及實施例2同樣之效 果。又，依本實施例，於密封樹脂4之切斷可使用適於此 之旋轉刀刀，而於電路基板2之切斷可使用適於此之種類 之雷射與照射條件。因此，可提升切斷密封基板丨之步驟 之效率。 第 又，在本實施例，係說明將旋轉刀刀2〇、與用以照射 雷射光12及第2雷射光18之雷射振盪器u兩者，設 於1台切斷裝置之例。惟未限於此，亦可於使用具有旋轉 刀刃20之切斷裝置在密封基板i之密封樹脂4形成槽之 後，將該密封基板1搬送至具有雷射振盪器n(參照圖υ 之切斷裝置。 201024011 又，在本實施例，亦可變更旋轉刀刀2〇而使用雷射光， 以於密封基板1之密封樹脂4形成槽。在此情形，較佳係 使用易於被密封樹脂4吸收之雷射光，例如藉由c〇2雷射 振盪器所產生之雷射光。 又，在本實施例，設於密封樹脂4之槽，亦可於樹脂 密封步驟形成。在此情形，可於樹脂密封用之成形模所具 有之空腔（cavity)預先將薄板狀之突出部設成格子狀，藉 此，可於密封樹脂4形成槽。 又’在本實施例，設於密封樹脂4之槽，亦可完全不 存在密封樹脂4而使電路基板2之表面露出。進而，於槽 之底部亦可存在密封樹脂在本實施例，於境界線6只要 密封樹脂4之厚度縮小即可。 又’至目前為止所說明之各實施例，於沿X方向之全 部境界線6形成齒孔狀之孔17、19之後，於沿γ方向之全 部境界線6形成齒孔狀之孔17、19。又，接著，於沿χ方 ❿ 向之全部境界線6切斷密封基板1之後，於沿γ方向之全 部境界線6切斷密封基板1。 在本發明，亦可將密封基板1切斷成大塊體（bl0ck)之 後’將各塊體依單位切斷成複數個區域7。具體而言，首先， 於密封基板1之全部境界線6形成齒孔狀之孔17。其次， 於密封基板1之X方向及γ方向之中心線附近之境界線幻 切斷密封基板卜藉此，將密封基板1劃分成相等之4個塊 體。其次，將4個塊體之每一個依單位切斷成複數個區域7。 依此方法，當密封基板丨之變形（扭曲、起伏、彎曲等）較大 17 201024011 之情形：藉由於全部境界線6形成齒孔狀之孔η，可減少 ^玄專變形所致之應力。因&，可抑制於切斷密封基板丄 時因該等變形所造成之不良影響。 又’亦能以如下方式進行。首先，於密封基板m 方向及Y方向之中心線附近之境界線6形成齒孔狀之孔 其次’於該等境界線6切斷密封基板i。藉此，將密封 土板1劃分成相等之4個塊體。其次，以4個塊體之每一 個為對象’於全部境界線6形成齒孔狀之孔17。其次，以It can be easily removed by an auxiliary gas. Therefore, it is possible to suppress cutting of the sealing substrate! The dross adheres to the sealing substrate i. According to the second effect, a good cutting quality of the cut surface can be obtained. As described above, the portion which is melted on the sealing substrate by the two irradiations can be easily removed by the assist gas.目&, in the "cutting surface of electronic parts, can obtain good cutting quality. According to the third effect, when a ceramic substrate is used as the circuit board, cracking of the ceramic substrate due to internal stress and generation of debris can be suppressed. In the present embodiment, the sealing ❹ substrate 1 ' having the perforated hole 17 formed by using a pulsed laser beam is cut using a continuous laser. Thereby, the thermal stress generated by the continuous laser irradiation can be alleviated in the vicinity of the perforated hole 17'. Thereby, the stress applied to the sealing substrate 1 in the vicinity of the perforated hole 17 can be reduced, in particular, the stress applied to the circuit board 2 composed of the ceramic substrate. Therefore, cracking of the circuit board 2 due to internal stress and generation of debris can be suppressed. Further, in the present embodiment, the aperture of the perforated hole 17 and the center of the hole are spaced apart from each other (the distance between the centers) depends on the irradiation of the first laser light 12 201024011. The condition "irradiation condition" means, for example, a laser Type, energy, frequency, load (dUty) ratio, irradiation diameter, moving speed of the guarding table 9, type of auxiliary gas, and pressure Θ X 'the aperture of the perforated hole i 7 and the center of the hole, spaced from each other The sealing substrate 1 having the perforated hole 17 formed by the irradiation of the second laser light 18 is cut off by the winter. Further, in the present embodiment, the hole diameter of the perforated hole 17 and the interval between the holes are appropriately set in accordance with the material and thickness of the sealing tree 4 and the circuit board 2, and the present invention can be applied to various specifications. Circuit board 2. In the present invention, a yag laser (e.g., wavelength 1 〇 64 nm), a fiber laser (e.g., wavelength i 〇 7 〇 nm), or the like is used to illuminate the i-th laser light i 2 . Further, the irradiation condition of the pulsed laser light is set to 2 energy, the moving speed of the table 9 is 3 〇 Gmm/see, and the irradiation condition of the continuous laser light is set to 300 W, and the movement of the table 9 is performed. The speed is i5〇—by setting the energy to (the energy of the continuous laser light) > (the energy of the pulsed laser light)', the moving speed of the table 9 is set to (the moving speed of the continuous laser light) > ((the moving speed of the pulsed laser light), the quality can be cut off at the cut portion. (Embodiment 2) An example of a cutting device for manufacturing an electronic component according to the present invention will be described with reference to Fig. 3'. Fig. 3 (1) is a table. This embodiment is a cutting device for manufacturing an electronic component. Figure 3 (2) shows a roadway in which a sealing substrate is formed with a perforated π-hole, and 圊3(3) indicates that the sealing substrate is to be sealed. A cross-sectional view of the cut state. In the present embodiment, 'first, as shown in FIG. 1', the pulsed 13 201024011 μμ laser light 12 is irradiated toward the boundary line 6 of the sealing substrate 1, and the table 9 is opposite to the head. Move in the + x direction of the graph. The first laser light 12 and the radiation condition are preset so as to be formed on the sealing substrate 1 of the composite material: "wearing = °" can be used as the boundary line 6 of the sealing substrate 1 as shown in FIG. 3 (2) In the middle & X direction, a boundary line 6 forms a hole H which is formed by a non-through hole, and is formed by the entire remaining boundary line 6' in the χ direction in the boundary line 6 of the sealing substrate. A perforated hole formed by a through hole. By means of all the boundary lines 6 in the X direction among the i-brieze line 6, a perforated hole 19 formed of a non-through hole is formed. Next, in the lattice boundary line 6 among the boundary lines 6 in the Y direction, a perforated hole 19 formed of a non-through hole is formed. As shown in Fig. 3 (3), while the second laser light is continuously irradiated toward the boundary line 6 of the substrate 1 , the table 9 is moved to the + direction of the figure with respect to the irradiation head 10 . Thereby, the sealing substrate 1 can be completely cut off in the boundary line 6 of the sealing substrate and in the X direction, and the remaining boundary of the sealing substrate 1 along the boundary line 6 of the sealing substrate can be completed. Line 6 completely cuts the sealing substrate j. Next, the sealing substrate 1 is completely cut in all the boundary lines 6 in the γ direction among the grid-like boundary lines 6. By the steps up to now, it is possible to The wire 6 cuts the sealing substrate i. The fourth substrate i can be singulated in a plurality of packages corresponding to the plurality of regions 7. The present embodiment is characterized in that the pulsed third laser light 12 is used. Irradiation of the boundary line 6 of the sealing substrate i forms a hole 19 having a hole shape of the tooth 201024011 which is formed without a through hole. The perforated hole 19 has an opening on the side of the sealing resin 4 and has a hole on the circuit board 2 Inner bottom surface. In other words, the perforated hole 19 is attached to the thickness of the sealing substrate 1. The formation is from the side of the sealing resin 4 to the middle of the circuit board 2. Again, as in the case of the embodiment, the aperture, the depth of the perforated hole 19, and the distance between the centers of the holes (the distance between the centers) depend on The irradiation condition of the first laser light 12. Further, the aperture, the depth of the perforated hole 19, and the distance between the centers of the holes are preset such that the perforated hole can be formed by irradiating the second laser light 18. The sealing substrate i of 19 is completely cut. According to the present embodiment, the same effects as those of the first embodiment can be obtained. Further, in the present embodiment, the perforation shape is appropriately set depending on the material and thickness of the sealing resin 4 and the circuit board 2. The hole diameter, the depth, and the distance between the center of the hole of the hole 9 can be applied to the circuit board 2 of various specifications. (Example 3) A cutting device for manufacturing an electronic component according to the present invention will be described with reference to FIG. [Embodiment 3] Fig. 4 (1) is a cross-sectional view showing a state in which a cutting device for manufacturing an electronic component according to the present embodiment is formed in a sealing resin, and Fig. 4 (2) is a view showing a perforated through hole. a cross-sectional view of the state of the circuit substrate; Fig. 4 (3) is a cross-sectional view showing a state in which the cutting device cuts the sealing substrate. In the present embodiment, first, as shown in Fig. 4 (1), the rotary resin blade 20 is used to form the sealing resin 4 on the sealing substrate. In Fig. 4(1)', it is shown that the table 9 is moved in the -X direction (left direction) to form a groove (unsigned) on the left side of the rotary blade 2〇. Again, in Fig. 4 (1) For ease of understanding, the rotary blade 20 is shown in a reduced size. 15 201024011 Next, as shown in Fig. 4 (2), the first boundary line 6 in the ~X direction is in the boundary line 6 of the sealing substrate , The emitted light 12 is irradiated onto the circuit board 2«, whereby a perforated hole 21 formed of a through hole is formed in the circuit board 2. Next, a perforated hole 21 formed of a through hole is formed in the circuit board 2 over the entire boundary line 6 of the sealing substrate. Next, as shown in Fig. 4 (3), the second laser light 18 is irradiated onto the circuit board 2 of the boundary line 6 of the sealing substrate 1, and the table 9 is moved with respect to the irradiation head 10 (see Fig. 1). In the direction of the figure + χ. Thereby, the sealing substrate 1 can be completely cut off along the boundary line 6 in the X direction among the boundary lines 6 of the sealing substrate 1. Thereafter, the sealing substrate 完全 is completely cut off in all the remaining boundary lines 6 in the X direction among the boundary lines 6 of the sealing substrate 丨. Next, the sealing substrate 1 is completely cut off in all the boundary lines 6 in the γ direction among the boundary lines 6 of the sealing substrate 1. According to this embodiment, the same effects as those of the embodiment and the second embodiment can be obtained. Further, according to the present embodiment, a rotary blade suitable for this can be used for cutting the sealing resin 4, and laser and irradiation conditions suitable for this can be used for cutting the circuit board 2. Therefore, the efficiency of the step of cutting the sealing substrate can be improved. Further, in the present embodiment, an example in which both the rotary blade 2 and the laser oscillator u for irradiating the laser light 12 and the second laser light 18 are provided in one cutting device will be described. However, it is not limited thereto, and after the groove is formed in the sealing resin 4 of the sealing substrate i by using the cutting device having the rotary blade 20, the sealing substrate 1 may be transferred to the laser oscillator n (refer to the cutting device of FIG. Further, in the present embodiment, the rotary blade can be changed to use the laser beam to form the groove in the sealing resin 4 of the sealing substrate 1. In this case, it is preferable to use a thunder which is easily absorbed by the sealing resin 4. The light is emitted, for example, by laser light generated by a c〇2 laser oscillator. Further, in the present embodiment, the groove provided in the sealing resin 4 may be formed in a resin sealing step. In this case, it may be used for resin sealing. The cavity of the molding die is formed in a lattice shape by the thin plate-shaped projecting portion, whereby the groove can be formed in the sealing resin 4. In the present embodiment, the groove is also provided in the groove of the sealing resin 4. The sealing resin 4 may be completely absent to expose the surface of the circuit board 2. Further, the sealing resin may be present at the bottom of the groove in the present embodiment, and the thickness of the sealing resin 4 may be reduced in the boundary line 6. As explained so far In each of the embodiments, after the perforation-like holes 17 and 19 are formed in all the boundary lines 6 in the X direction, the perforated holes 17 and 19 are formed in all the boundary lines 6 in the γ direction.切断方❿ After cutting the sealing substrate 1 to all the boundary lines 6, the sealing substrate 1 is cut at all boundary lines 6 in the γ direction. In the present invention, the sealing substrate 1 can also be cut into large blocks (bl0ck). Then, the respective blocks are cut into a plurality of regions 7 in accordance with the unit. Specifically, first, the perforated holes 17 are formed in all the boundary lines 6 of the sealing substrate 1. Next, in the X direction and γ of the sealing substrate 1. The boundary line near the center line of the direction slashes the sealing substrate, thereby dividing the sealing substrate 1 into four equal blocks. Next, each of the four blocks is cut into a plurality of regions 7 in units. According to this method, when the deformation of the sealing substrate (distortion, undulation, bending, etc.) is large, the situation of 2010 2010 is as follows: by forming the perforated hole η by all the boundary lines 6, the stress caused by the deformation of the Xuan special can be reduced. Because &, it can be suppressed by the deformation when the sealing substrate is cut. The adverse effect can also be performed as follows. First, a perforated hole is formed in the boundary line 6 near the center line in the m direction and the Y direction of the sealing substrate, and the sealing substrate i is cut off at the boundary line 6 Thereby, the sealing soil plate 1 is divided into four equal blocks. Secondly, each of the four blocks is targeted to form a perforated hole 17 in all the boundary lines 6. Secondly,
4個塊體之每—伽&料多 ^ ^ AEach of the 4 blocks - gamma & more ^ ^ A
個為對象，於全部境界線6切斷密封基板 1。依此方法’亦可抑制當切斷密封基板1時因扭曲、起伏、 腎曲等變形所造成之不良影響。For each object, the sealing substrate 1 is cut at all boundary lines 6. According to this method, it is also possible to suppress the adverse effects caused by deformation such as distortion, undulation, and kidney curvature when the sealing substrate 1 is cut.
曰又，至目前為止之各實施例，係說明分別具有將lED ^片料晶片3、以及將具有透光性之㈣樹脂作為密封樹 月曰4之密封基板1。惟未限於此，亦可使用雷射二極體晶片 作為Μ片3 °再者，藉由使用功率半導體晶片作為晶片3，Further, each of the embodiments so far has a sealing substrate 1 each having a lED ^ chip wafer 3 and a translucent (four) resin as a sealing tree. However, it is not limited thereto, and a laser diode chip can also be used as the wafer 3°, by using a power semiconductor wafer as the wafer 3.
使用環氧樹脂作為密封樹脂4，以製造功率半導體零件時， 亦可適用本發明。 ’ 又，亦可於1個區域7裝配複數個晶片3。例如，可將 裝配有複數個LED晶片《i個區域7，藉由單片化而發揮 面光源之作用。又’裝配於1個區域7之複數個晶片3 可不必rfc- 4η η 男相同功能。例如，當將發光元件與受光元件梦 配於1個^ ί-域7時’可藉由將該丨個區域7單片化而 光感測器之作用。 又’至目前為止之各實施例，係一邊將第1雷射光12The present invention can also be applied when an epoxy resin is used as the sealing resin 4 to manufacture a power semiconductor component. Further, a plurality of wafers 3 may be mounted in one area 7. For example, a plurality of LED chips "i regions 7" can be mounted to function as a surface light source by singulation. Further, a plurality of wafers 3 assembled in one region 7 do not have to have the same function as rfc- 4n η. For example, when the light-emitting element and the light-receiving element are dreamed on one --domain 7, the photosensor can be acted upon by singulating the 区域 regions 7 in a single piece. Further, in each of the embodiments so far, the first laser light 12 is turned on.
1S 201024011 或第2雷Μ 18朝密封基板1之境界線6照射，_ 於照射頭10將工作台9移動於圖之X方向或Υ方向。惟未 ·)相對於工作台9將照射頭10移動於圖 向或Υ方向。再去，t-ru分 ^ ^ 冉者亦可將工作台9與照射頭10兩者 於圖之X方向式V 士 败 _ 戈Υ方向。簡^之，只要使工作台9與照射 頭10彼此相對移動於圖之X方向或Υ方向即可。 ❹1S 201024011 or the second thunder 18 is irradiated toward the boundary line 6 of the sealing substrate 1, and the table 9 is moved by the irradiation head 10 in the X direction or the x direction of the drawing. However, the head 10 is moved in the direction of the figure or the yoke with respect to the table 9. Going again, the t-ru score ^ ^ can also be used in both the worktable 9 and the illumination head 10 in the X-direction V 士 _ 戈 Υ direction. Alternatively, the table 9 and the illuminating head 10 may be moved relative to each other in the X direction or the Υ direction of the drawing. ❹
此外，例如亦可藉由改變從照射頭10照射於密封基板 1之第1雷射光12及第2雷射光18之照射角度，於密：基 板1上使雷射光之照射位置移動，藉此，使雷射光與密封 基板1彼此相對移動。此時，可使㈣基板i與照射頭 不移動，亦可使其彼此相對移動。 又，至目則為止之各實施例，雖已說明境界線6以線 段構成之情形。惟未限於此，於境界線6包含曲線、或由 複數條線段組合而成之連續線時，亦可適用本發明。因此， 於切斷密封基板，卩製造外形的—部分含有曲線或連續線 之封裝體（例如，某種記憶卡）之情形’亦可適用本發明。在 此情形，齒孔狀之孔17、19係並排形成為曲線狀或連續線 狀。 又，至目前為止之各實施例，係透過膠帶8將密封基 板1固定於工作台9。惟未限於此，亦可藉由吸附將密封基 板1固定於工作台9。在此情形，較佳係於與工作台9表面 之各境界線6重疊之部分設置槽。藉此，於密封基板丨形 成齒孔狀之孔17、19之步驟與完全切斷密封基板丨之步驟 兩者（尤其是後者之步驟）所產生之浮渣，容易通過該等槽而 201024011 . 予以去除。 又，本發明，並未限於上述之各實施例，在不脫離本 發明之主旨之範圍内，可視需要任意且適當組合、變更、 或選擇採用。 【圖式簡單說明】 圖1係表示實施例1之電子零件製造用之切斷裝置於 密封基板形成齒孔狀之孔的狀態之截面圖。 圖2(1)係表示實施例1之電子零件製造用之切斷裝置 ❹ 於抢封基板形成齒孔狀之貫穿孔的狀態之截面圖；圖2(2) 係表示形成有貫穿孔之密封基板之截面圖；圖2(3)係表示 將密封基板切斷的狀態之截面圖。 圖3(1)係表示實施例2之電子零件製造用之切斷裝置 於费封基板形成齒孔狀之不貫穿孔的狀態之截面圖；圖3(2) 係表不形成有齒孔狀之不貫穿孔之密封基板之截面圖；圖 3(3)係表示將密封基板切斷的狀態之截面圖。 、圖4(丨）係表示實施例3之電子零件製造用之切斷裝置 〇 2密封樹脂形成槽的狀態之截面圖；圖4(2)係表示將齒孔 彡成於電路基板的狀態之截面圖；圖4(3)係表 不該切斷裝置切斷密封基板的狀態之截面圖。 【主要元件符號說明】 1 密封基板 2 電路基板 20 201024011Further, for example, by changing the irradiation angles of the first laser light 12 and the second laser light 18 that are irradiated onto the sealing substrate 1 from the irradiation head 10, the irradiation position of the laser light can be moved on the substrate 1: The laser light and the sealing substrate 1 are moved relative to each other. At this time, the (four) substrate i and the irradiation head can be prevented from moving, and the substrate i can be moved relative to each other. Further, in the respective embodiments up to the point of view, the case where the boundary line 6 is constituted by a line segment has been described. However, the present invention is also applicable to the case where the boundary line 6 includes a curved line or a continuous line composed of a plurality of line segments. Therefore, the present invention can also be applied to the case where the sealing substrate is cut and the package having a curved shape or a continuous line (for example, a certain type of memory card) is manufactured. In this case, the perforated holes 17, 19 are formed side by side in a curved or continuous line shape. Further, in each of the embodiments so far, the sealing substrate 1 is fixed to the table 9 via the tape 8. However, it is not limited thereto, and the sealing substrate 1 may be fixed to the table 9 by adsorption. In this case, it is preferable to provide a groove in a portion overlapping with each boundary line 6 on the surface of the table 9. Thereby, the scum generated in the step of forming the perforated holes 17 and 19 in the sealing substrate 与 and the step of completely cutting the sealing substrate ( (especially in the latter step) can easily pass through the grooves 201024011 . Remove it. Further, the present invention is not limited to the above-described embodiments, and may be arbitrarily and appropriately combined, changed, or selected as needed within the scope of the gist of the invention. [Brief Description of the Drawings] Fig. 1 is a cross-sectional view showing a state in which a cutting device for manufacturing an electronic component according to the first embodiment has a perforated hole in a sealing substrate. Fig. 2 (1) is a cross-sectional view showing a state in which a cutting device for manufacturing an electronic component of the first embodiment is formed in a state in which a through hole is formed in a perforated shape, and Fig. 2 (2) shows a seal in which a through hole is formed. A cross-sectional view of the substrate; and Fig. 2 (3) is a cross-sectional view showing a state in which the sealing substrate is cut. Fig. 3 (1) is a cross-sectional view showing a state in which a cutting device for manufacturing an electronic component according to the second embodiment is formed in a perforated shape in a hole-shaped substrate; and Fig. 3 (2) is not formed in a perforated shape. A cross-sectional view of the sealing substrate which does not penetrate the hole; and Fig. 3 (3) shows a cross-sectional view of a state in which the sealing substrate is cut. 4(丨) is a cross-sectional view showing a state in which a sealing device 〇2 for manufacturing an electronic component of the third embodiment is formed by sealing a resin, and FIG. 4(2) is a state in which a perforation is formed on a circuit board. Fig. 4 (3) is a cross-sectional view showing a state in which the cutting device cuts the sealing substrate. [Main component symbol description] 1 Sealing substrate 2 Circuit substrate 20 201024011
3 晶片 4 密封樹脂 5 透鏡部 6 邊界線 7 區域 8 膠帶（固定手段） 9 工作台（移動手段） 10 照射頭 11 雷射振盪器 12 第1雷射光（雷射光） 13 配管 14 輔助氣體 15 喷嘴 16 被照射部 17、21 齒孔狀之孔（貫穿孔） 18 第2雷射光（雷射光） 19 齒孔狀之孔（不貫穿孔） 20 旋轉刀刃 213 Wafer 4 Sealing resin 5 Lens part 6 Boundary line 7 Area 8 Tape (fixing means) 9 Table (moving means) 10 Irradiation head 11 Laser oscillator 12 First laser light (laser light) 13 Piping 14 Auxiliary gas 15 Nozzle 16 Irradiated parts 17, 21 Perforated holes (through holes) 18 Second laser light (laser light) 19 Perforated holes (non-through holes) 20 Rotary blade 21
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| Application Number | Priority Date | Filing Date | Title |
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| JP2008332054A JP5261168B2 (en) | 2008-12-26 | 2008-12-26 | Cutting apparatus and method for manufacturing electronic parts |
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| TW201024011A true TW201024011A (en) | 2010-07-01 |
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| JP (1) | JP5261168B2 (en) |
| KR (1) | KR20110110238A (en) |
| CN (1) | CN102256739A (en) |
| SG (1) | SG172318A1 (en) |
| TW (1) | TW201024011A (en) |
| WO (1) | WO2010073640A1 (en) |
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| CN102368521B (en) * | 2011-10-26 | 2013-11-20 | 深圳市瑞丰光电子股份有限公司 | Cutting method for LED wafer |
| CN102699536A (en) * | 2012-05-11 | 2012-10-03 | 东莞光谷茂和激光技术有限公司 | Laser cutting process for metal thick plate |
| JP6017373B2 (en) * | 2013-05-21 | 2016-11-02 | Ｔｏｗａ株式会社 | Manufacturing method of semiconductor device |
| JP2016015447A (en) * | 2014-07-03 | 2016-01-28 | パナソニックＩｐマネジメント株式会社 | Wafer manufacturing method and apparatus |
| JP6460704B2 (en) * | 2014-09-30 | 2019-01-30 | 株式会社ディスコ | Method for dividing ceramic substrate |
| JP6377514B2 (en) * | 2014-12-17 | 2018-08-22 | 株式会社ディスコ | Processing method of package substrate |
| CN107949454B (en) * | 2015-09-15 | 2020-04-28 | 松下知识产权经营株式会社 | Welding structure and welding method for metal member |
| CN106249955A (en) * | 2016-08-03 | 2016-12-21 | 业成科技（成都）有限公司 | Cutting sealing pressure-sensing module method and the pressure-sensing device processed thereof |
| CN108666212B (en) * | 2018-05-02 | 2023-01-10 | 南方科技大学 | LED chip manufacturing method |
| US10562338B2 (en) * | 2018-06-25 | 2020-02-18 | American Crafts, L.C. | Heat pen for use with electronic cutting and/or drawing systems |
| US11361998B2 (en) | 2019-08-30 | 2022-06-14 | Innolux Corporation | Method for manufacturing an electronic device |
| CN112620965A (en) * | 2019-10-08 | 2021-04-09 | 台湾丽驰科技股份有限公司 | Dual laser processing machine and processing method thereof |
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| JPS62234686A (en) * | 1986-04-02 | 1987-10-14 | Mitsubishi Electric Corp | Cutting method for working material |
| JPS62234685A (en) * | 1986-04-02 | 1987-10-14 | Mitsubishi Electric Corp | Cutting method for working material |
| EP1550528A1 (en) * | 2003-12-30 | 2005-07-06 | Advanced Laser Separation International (ALSI) B.V. | Method, device and diffraction grating for separating semiconductor elements formed on a substrate by altering said diffraction grating |
| FR2893873B1 (en) * | 2005-11-25 | 2008-12-12 | Air Liquide | PROCESS FOR CUTTING WITH A STAINLESS STEEL FIBER LASER |
| KR20070097189A (en) * | 2006-03-28 | 2007-10-04 | 삼성전자주식회사 | Method for dividing substrate and substrate dividing apparatus for using it |
| JP2007279616A (en) * | 2006-04-12 | 2007-10-25 | Sony Corp | Method for manufacturing driving substrate, and the same |
| JP5086690B2 (en) * | 2007-05-18 | 2012-11-28 | 日本特殊陶業株式会社 | Manufacturing method of ceramic substrate |
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- 2009-12-22 KR KR1020117017507A patent/KR20110110238A/en not_active Application Discontinuation
- 2009-12-22 CN CN200980151217XA patent/CN102256739A/en active Pending
- 2009-12-22 WO PCT/JP2009/007148 patent/WO2010073640A1/en active Application Filing
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| WO2010073640A1 (en) | 2010-07-01 |
| KR20110110238A (en) | 2011-10-06 |
| CN102256739A (en) | 2011-11-23 |
| JP2010149165A (en) | 2010-07-08 |
| SG172318A1 (en) | 2011-07-28 |
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