201011873 • 九、發明說明： • 【發明所屬之技術領域】 本發明涉及電路板技術，尤其涉及一種封裝基板以及 具有該封裝基板之封裝結構。 【先前技術】 於資訊、通訊及消費性電子產業中，電路板是所有電 子產品不可或缺之基本構成要件。隨著電子產品往小型 化、高速化方向發展，電路板亦從單面電路板往雙面電路 鲁板、多層電路板方向發展。多層電路板由於具有較多佈線 面積與較高裝配密度而得到廣泛應用，請參見Takahashi，A. 等人於 1992 年發表於 IEEE Trans, on Components， Packaging, and Manufacturing Technology 之文獻 “High density multilayer printed circuit board for HITAC M~ 880” 。 佈線面積之增加、導電線路之細化使得電路板線寬越 來越小，線路之電阻愈來愈大’產生之熱量亦愈來愈多。 ❹而裝配密度之增加極大地增加電路板上之封裝元件如集成 晶片、電阻之數量，亦極大地增加封裝元件產生之熱量。 亦即，先前技術之電路板產生較多熱量。惟’先前技術之 電路板並不能較快地散熱。此係因為，一方面，電路板導 電線路之電阻愈來愈大，導熱性能亦愈來愈弱；另一方面， 電路板之絕緣層具有較低之導熱係數’不能有效導熱’更 不能有效散熱。 有鑑於此，提供一種具有較佳散熱性能之封裝基板以 6 201011873 及封裝結構實屬必要。 【發明内容】 . 以下將以實施例說明一種封裝基板以及封襄結構。 . 種封裝基板’依次包括導電層、複合材料層以及金 屬基板。該導電層具有導電圖形。該複合材料層具有第一 表面與第二表面，該第一表面與金屬基板接觸，該第二表 面與第一表面相對。複合材料層包括聚合物基體以及埋設 於聚合物基體之奈米碳管陣列，該奈米碳管陣列中奈米碳 ®官之軸向與第一表面之夾角為8〇〜1〇〇度之間。 一種封裝結構，包括封裝元件以及如上該封裝基板， 該封裝元件電連接於該導電圖形。 、本技術方案之封裝基板以及封裝結構中具有金屬基板 以及與金屬基板接觸之複合材料層，並且該複合材料層具 有生長方向基本垂直於第一表面奈米碳管陣列，從而複合 材料層具有優良之導熱性能，可較快地將導電圖形以及封 參t政發之熱量傳導至金屬基板，並由金屬基板快速散 發至外界。 【實施方式】 封# 將、Ό σ附圖及複數實施例，對本技術方案提供之 封裝^以及封裝結構作進—步之詳細說明。 圖b本技術方案第一實施例提供之封裝基板 裳元件電連接、、導電圖形1U，該導電圖形111用於與封 以實現訊號傳輸與處理。該複合材料層12位 201011873 於導電層11與金屬基板13之間，具有相對且平行之第一 ' 表面1201與第二表面1202。該第一表面1201與金屬基板 .13接觸，該第二表面1202與導電層11相接觸。複合材料 層12用於將第一表面1201之熱量較快地傳導至第二表面 * 1202，從而將來自導電圖形111與封裝元件之熱量較快地 傳導至金屬基板13。該金屬基板13由铭、銅等具有較好導 熱性能之金屬材料製成，用於將複合材料層12傳導之熱量 快速散發至外界。 Φ 具體地，該複合材料層12包括聚合物基體121與奈米 碳管陣列122。該聚合物基體121可為絕緣之硬性樹脂，如 環氧、玻纖布等，亦可為絕緣之柔性樹脂，例如聚醯亞胺 (Polyimide，PI )、聚乙烯對苯二甲酸乙二醇 g旨（Polyethylene Terephtalate，PET)、聚四氟乙稀（PolytetraHuoroethylene， PTFE)、聚硫胺（Polyamide)、聚甲基丙稀酸曱g旨（Polymethylmethacrylate) 、 聚 碳酸酯 （Polycarbonate)或聚醯 亞胺-聚乙烯 -對苯二甲醋共聚物（Polyamide polyethylene-terephthalate ® copolymer)等。該奈米碳管陣列122包括多根平行排列之奈 米碳管，該多根奈米碳管之軸向與第一表面1201之夾角為 80~100度之間。亦即，奈米碳管陣列122之生長方向基本 垂直於第一表面1201與第二表面1202。 奈米碳管陣列122具有相對之第一端部1221與第二端 部1222，該第一端部1221與第二端部1222之間距小於第 一表面1201與第二表面1202之間距，即，奈米碳管陣列 122之高度小於複合材料層12之厚度。優選地，該奈米碳 201011873 管陣列之高度為複合材料層厚度之2/3〜4/5之間。 ' 該奈米碳管陣列122埋設於聚合物基體121。本實施例 、中，該第一端部1221與第二端部1222均埋設於聚合物基 .體121内。該第一端部1221靠近第一表面1201且不與第 一表面1201相接觸，該第二端部1222靠近第二表面1202 且不與第二表面1202相接觸。並且，該第一端部1221與 第一表面1201之間距等於第二端部1222與第二表面1202 之間距，第一端部1221與第一表面1201之間距可為奈米 ©碳管陣列122高度之1/4〜1/8。 由於奈米碳管陣列122不與第一表面1201接觸，因此 奈米碳管陣列122與導電圖形111之間絕緣。亦即，導電 圖形111與金屬基板13之間並不電導通。另外，由於奈米 碳管陣列122之第一端部1221與第一表面1201之間距、 第二端部1222與第二表面1202之間距均較小，而奈米碳 管陣列122之生長方向即多根奈米碳管之轴向具有良好導 熱性能，因此，複合材料層12於奈米碳管陣列122之生長 方向上具有良好導熱性能，可較快地將導電圖形111以及 電連接於導電圖形111之封裝元件之熱量傳導至金屬基板 13，並進一步由金屬基板13散發至外界。 本技術方案第一實施例提供之封裝基板10可採用如下 步驟製備： 第一步，請參閱圖2,提供基底100。基底100可為銅 層、鋁層或鎳層等金屬層。基底100之厚度可為2〜200微 米之間。 9 201011873 第二步，請參閱圖3,以電鍍、蒸鍍、濺鍍或者氣相沉 . 積方法於基底100上形成催化劑層14，催化劑層14為鐵、 、始、鎳或及合金等可生長奈米碳管陣列之材料。 . 第三步，請參閱圖4’於催化劑層14上生長奈米碳管 陣列122。 製備奈米碳管陣列122之方法不限。以化學氣相沈積 法製備時，可將形成有催化劑層14之基底ι〇〇放入反應爐 中’於700〜1000攝氏度下，通入乙炔、乙烯等碳源氣，從 ⑩而於催化劑層14上生長出奈米碳管陣列122。奈米碳管陣 列122之生長高度可藉由生長時間控制，一般生長高度為 1〜30微米。奈米碳管陣列122中多根奈米碳管之排列方向 較為一致’均基本垂直於催化劑層14。亦即，多根奈来碳 管之軸向與催化劑層14之夾角均大致於8〇〜1〇〇度之間。 第四步，形成複合材料層12。 首先，請參閱圖5,以浸塗、塗佈、壓合或其他方式將 ⑩聚合物基體121施加於奈米碳管陣列122中，使聚合物基 體121充分填充奈米碳管陣列122中複數奈米碳管之間之 空隙’並包覆奈米碳管陣列122之第二端部i222。 其次’請參閱圖6，去除基底1〇〇以及催化劑層14， 從而露出奈米碳管陣列122之第一端部1221。 去除基底100及催化劑層14之方法可為蝕刻法。例如 當基底100為銅、催化劑層14為三氧化二鐵時，可用=氯 化鐵溶液蝕刻基底1〇〇及催化劑層14，從而露出奈米碳管 陣列122之第一端部1221。當然，採用其他之基:材二及 201011873 ' 催化劑層材料時採用相應之蝕刻劑即可。 • 再次，請參閱圖7，以浸塗、塗佈、壓合或其他方式使 聚合物基體121包覆奈米碳管陣列122之第一端部1221， > 從而獲得奈米碳管陣列122埋設於聚合物基體121内之複 合材料層12。 第五步，將導電層11、金屬基板13分別壓合於複合材 料層12之第二表面1202、第一表面1201，從而獲得封裝 基板10，如圖1所示。 ® 當然，將導電層11、金屬基板13壓合於複合材料層 12之前或之後，還可包括將導電層11形成導電圖形111之 步驟。將導電層11形成導電圖形111之步驟可藉由圖像轉 移法以及蝕刻工序實現。 請參閱圖8,本技術方案第二實施例提供之封裝基板 20與第一實施例提供之封裝基板10大致相同，其不同之處 在於：該奈米碳管陣列222之第一端部2221與第一表面 2201相齊平，而第二端部2222則埋設於聚合物基體221 ®内且與第二表面2202有一定間距。從而，導電圖形211與 金屬基板23之間絕緣並具有良好之導熱性能。 另外，亦可使得奈米碳管陣列222中之第二端部2222 與第二表面2202齊平，而第一端部2221埋設於聚合物基 體221内且與第一表面2201有一定間距，同樣可獲得良好 之絕緣與導熱效果。 請參閱圖9,本技術方案第三實施例提供之封裝基板 30與第一實施例提供之封裝基板20大致相同，其不同之處 11 201011873 在於：該封裝基板30還包括位於導電層31與複合材料層 • 32之間之絕緣層35，該複合材料層32之第一表面3201與 金屬基板33相接觸，第二表面3202與絕緣層35相接觸。 ， 該絕緣層35具有一與導電圖形311相對應之通孔351，該 通孔351用於放置封裝元件，以便於封裝基板30上封裝封 裝元件。 本技術方案還提供一種包括上述封裝基板之封裝結 構。 ⑩ 請參閱圖10，本技術方案提供之封裝結構4包括如第 三實施例所示之封裝基板30、封裝元件36以及封裝樹脂 37。 該封裝元件36為用於實現特定處理功能之器件，其可 為積體電路晶片，亦可為電容電感元件，還可為記憶體或 其他器件。 將封裝元件36封裝於封裝基板30之方法亦不限。本 實施例中，該封裝元件36藉由封裝樹脂37固定於通孔351 ®内，與複合材料層32接觸，並藉由金屬導線361與導電圖 形311電連接，從而實現封裝元件36與封裝基板30間之 訊號傳輸與處理。 該封裝元件36工作時，封裝元件36以及導電圖形311 產生之熱量可藉由複合材料層32中之奈米碳管陣列較快地 傳輸至金屬基板33，並由金屬基板33快速散發至外界。 當然，封裝結構4除如本實施例所示包括如圖9所示 之封裝基板30外，亦可包括如圖1或圖8所示之封裝基板， 12 201011873 同樣可具有較好散熱效果。 綜上所述，本發明確已符合發明專利之要件，遂依法 .提出專利申請。惟，以上所述者僅為本發明之較佳實施方 .^自不能以此限制本案之中請專利範圍。舉凡熟悉本案 技衣之人士援依本發明之精神所作之等效修飾或變化，皆 應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 ® 1為本技術方㈣—實_提供之封裝基板之示意 為本技術方案第—實施例提供之基底之示意圖。 化劑層之Λ本圖技術方案第—實施例提供之絲底上形成催 長奈實施例提供之於催化劑層上生 ❿ 劑層本技案第—實施例提供之去除基底與催化 圖7為本技術方宰笛 奈米碳管陣列之第一独、一實施例提供之聚合物基體包覆 圖8為本技術方案^7圖° 圖。 、弟一實施例提供之封裝基板之示意 為本技術方案第三實施例提供之封裝基板之示意 圖 圖 13 201011873 圖10為本技術方案提供之包括如圖9所示之封裝基板 之封裝結構之示意圖。 【主要元件符號說明】 封裝基板 10、20、30 導電層 11、31 複合材料層 12、32 金屬基板 13 、 23 、 33 導電圖形 ❿第一表面 111 、 211 、 311 1201、2201 ' 3201 第二表面 1202 、 2202 ' 3202 聚合物基體 121 、 221 奈米碳管陣列 122、222 第一端部 1221 、 2221 第二端部 1222 ' 2222 基底 100 催化劑層 魯 絕緣層 14 35 通孔 351 封裝元件 36 封裝樹脂 37 金屬導線 361 14201011873 • Nine, invention description: • Technical field of the invention The present invention relates to circuit board technology, and in particular to a package substrate and a package structure having the package substrate. [Prior Art] In the information, communication and consumer electronics industries, circuit boards are an essential component of all electronic products. With the development of electronic products in the direction of miniaturization and high speed, the circuit boards have also evolved from single-sided circuit boards to double-sided circuit boards and multilayer boards. Multilayer boards are widely used due to their large wiring area and high assembly density. See Takahashi, A. et al., 1992, IEEE Trans, on Components, Packaging, and Manufacturing Technology, "High Density Layered". Circuit board for HITAC M~ 880”. The increase in wiring area and the refinement of the conductive lines make the board line width smaller and smaller, and the resistance of the line becomes larger and larger. The heat generated is also increasing. The increase in assembly density greatly increases the number of package components such as integrated wafers and resistors on the board, and also greatly increases the amount of heat generated by the package components. That is, the prior art circuit board generates more heat. However, the prior art boards do not dissipate heat faster. This is because, on the one hand, the resistance of the conductive lines of the circuit board is getting larger and larger, and the thermal conductivity is getting weaker. On the other hand, the insulation layer of the circuit board has a lower thermal conductivity, 'can not effectively conduct heat', and can not effectively dissipate heat. . In view of this, it is necessary to provide a package substrate with better heat dissipation performance in the form of 201011873 and package structure. SUMMARY OF THE INVENTION A package substrate and a sealing structure will be described below by way of examples. The package substrate 'in turn includes a conductive layer, a composite material layer, and a metal substrate. The conductive layer has a conductive pattern. The composite layer has a first surface that is in contact with the metal substrate and a second surface that is opposite the first surface. The composite material layer comprises a polymer matrix and an array of carbon nanotubes embedded in the polymer matrix, wherein the angle between the axial direction of the nano carbon® and the first surface of the carbon nanotube array is 8〇~1〇〇 between. A package structure includes a package component and a package substrate as described above, the package component being electrically connected to the conductive pattern. The package substrate and the package structure of the present invention have a metal substrate and a composite material layer in contact with the metal substrate, and the composite material layer has a growth direction substantially perpendicular to the first surface carbon nanotube array, so that the composite material layer has excellent The thermal conductivity can quickly transfer the conductive pattern and the heat of the sealing to the metal substrate, and the metal substrate is quickly dissipated to the outside. [Embodiment] The sealing, the σ σ drawing and the plural embodiments provide a detailed description of the package and the package structure provided by the technical solution. The package substrate provided by the first embodiment of the present invention is electrically connected to the device, and the conductive pattern 111 is used for sealing and processing. The composite material layer 12 is 201011873 between the conductive layer 11 and the metal substrate 13, and has a first parallel surface 1201 and a second surface 1202. The first surface 1201 is in contact with the metal substrate .13, and the second surface 1202 is in contact with the conductive layer 11. The composite layer 12 is used to conduct heat from the first surface 1201 to the second surface *1202 faster, thereby transferring heat from the conductive pattern 111 and the package component to the metal substrate 13 faster. The metal substrate 13 is made of a metal material having good heat conductivity such as Ming, copper, etc., and is used for quickly dissipating the heat conducted by the composite material layer 12 to the outside. Φ Specifically, the composite layer 12 includes a polymer matrix 121 and a carbon nanotube array 122. The polymer matrix 121 may be an insulating hard resin such as epoxy, fiberglass cloth, or the like, or an insulating flexible resin such as polyimide (PI) or polyethylene terephthalate g. Polyethylene Terephtalate (PET), Polytetrahydroethylene (PTFE), Polyamide, Polymethylmethacrylate, Polycarbonate or Polyimine Poly-ethylene terephthalate copolymer (Polyamide polyethylene-terephthalate ® copolymer). The carbon nanotube array 122 includes a plurality of carbon nanotubes arranged in parallel, the axial direction of the plurality of carbon nanotubes being between 80 and 100 degrees from the first surface 1201. That is, the growth direction of the carbon nanotube array 122 is substantially perpendicular to the first surface 1201 and the second surface 1202. The carbon nanotube array 122 has a first end portion 1221 and a second end portion 1222. The distance between the first end portion 1221 and the second end portion 1222 is smaller than the distance between the first surface 1201 and the second surface 1202, that is, The height of the carbon nanotube array 122 is less than the thickness of the composite layer 12. Preferably, the height of the nanocarbon 201011873 tube array is between 2/3 and 4/5 of the thickness of the composite layer. The carbon nanotube array 122 is embedded in the polymer matrix 121. In the embodiment, the first end portion 1221 and the second end portion 1222 are embedded in the polymer base body 121. The first end portion 1221 is adjacent to the first surface 1201 and is not in contact with the first surface 1201. The second end portion 1222 is adjacent to the second surface 1202 and is not in contact with the second surface 1202. Moreover, the distance between the first end portion 1221 and the first surface 1201 is equal to the distance between the second end portion 1222 and the second surface 1202. The distance between the first end portion 1221 and the first surface 1201 may be a nano carbon tube array 122. The height is 1/4 to 1/8. Since the carbon nanotube array 122 is not in contact with the first surface 1201, the carbon nanotube array 122 is insulated from the conductive pattern 111. That is, the conductive pattern 111 and the metal substrate 13 are not electrically conducted. In addition, since the distance between the first end portion 1221 of the carbon nanotube array 122 and the first surface 1201 and the distance between the second end portion 1222 and the second surface 1202 are small, the growth direction of the carbon nanotube array 122 is The axial direction of the plurality of carbon nanotubes has good thermal conductivity. Therefore, the composite layer 12 has good thermal conductivity in the growth direction of the carbon nanotube array 122, and the conductive pattern 111 and the electrically conductive pattern can be electrically connected relatively quickly. The heat of the package component of 111 is conducted to the metal substrate 13, and is further radiated to the outside by the metal substrate 13. The package substrate 10 provided by the first embodiment of the present technical solution can be prepared by the following steps: First, referring to FIG. 2, a substrate 100 is provided. The substrate 100 may be a metal layer such as a copper layer, an aluminum layer or a nickel layer. The thickness of the substrate 100 can be between 2 and 200 microns. 9 201011873 The second step, referring to FIG. 3, is to form a catalyst layer 14 on the substrate 100 by electroplating, vapor deposition, sputtering or vapor deposition. The catalyst layer 14 is made of iron, tin, nickel or alloy. The material of the growing carbon nanotube array. In the third step, the carbon nanotube array 122 is grown on the catalyst layer 14 as shown in Fig. 4'. The method of preparing the carbon nanotube array 122 is not limited. When prepared by chemical vapor deposition, the base ι formed with the catalyst layer 14 can be placed in a reaction furnace at a temperature of 700 to 1000 degrees Celsius, and a carbon source gas such as acetylene or ethylene is introduced, and the catalyst layer is formed from 10 to 10 A carbon nanotube array 122 is grown on 14. The growth height of the carbon nanotube array 122 can be controlled by growth time, and the growth height is generally 1 to 30 μm. The arrangement of the plurality of carbon nanotubes in the carbon nanotube array 122 is relatively uniform, and is substantially perpendicular to the catalyst layer 14. That is, the angle between the axial direction of the plurality of carbon nanotubes and the catalyst layer 14 is approximately between 8 〇 and 1 〇〇. In the fourth step, a composite material layer 12 is formed. First, referring to FIG. 5, 10 polymer matrix 121 is applied to the carbon nanotube array 122 by dip coating, coating, pressing or other means, so that the polymer matrix 121 is sufficiently filled in the carbon nanotube array 122. The gap between the carbon nanotubes 'and covers the second end portion i222 of the carbon nanotube array 122. Next, referring to Fig. 6, the substrate 1 and the catalyst layer 14 are removed to expose the first end portion 1221 of the nanotube array 122. The method of removing the substrate 100 and the catalyst layer 14 may be an etching method. For example, when the substrate 100 is copper and the catalyst layer 14 is ferric oxide, the substrate 1 and the catalyst layer 14 may be etched with a = iron chloride solution to expose the first end portion 1221 of the carbon nanotube array 122. Of course, the use of other bases: material 2 and 201011873 'catalyst layer materials can be used with the corresponding etchant. • Again, referring to FIG. 7, the polymer substrate 121 is coated with the first end portion 1221 of the carbon nanotube array 122 by dip coating, coating, pressing, or the like, thereby obtaining the carbon nanotube array 122. The composite layer 12 is embedded in the polymer matrix 121. In the fifth step, the conductive layer 11 and the metal substrate 13 are respectively pressed against the second surface 1202 of the composite material layer 12, and the first surface 1201, thereby obtaining the package substrate 10, as shown in FIG. ® Of course, before or after the conductive layer 11 and the metal substrate 13 are pressed against the composite material layer 12, the step of forming the conductive layer 11 into the conductive pattern 111 may be further included. The step of forming the conductive layer 11 into the conductive pattern 111 can be realized by an image transfer method and an etching process. Referring to FIG. 8 , the package substrate 20 provided by the second embodiment of the present invention is substantially the same as the package substrate 10 provided by the first embodiment, except that the first end portion 2221 of the carbon nanotube array 222 is The first surface 2201 is flush and the second end 2222 is embedded within the polymer matrix 221® and spaced from the second surface 2202. Thereby, the conductive pattern 211 is insulated from the metal substrate 23 and has good thermal conductivity. In addition, the second end portion 2222 of the carbon nanotube array 222 may be flush with the second surface 2202, and the first end portion 2221 is embedded in the polymer base 221 and spaced apart from the first surface 2201. Good insulation and thermal conductivity are obtained. Referring to FIG. 9 , the package substrate 30 provided by the third embodiment of the present invention is substantially the same as the package substrate 20 provided by the first embodiment, and the difference 11 201011873 is that the package substrate 30 further includes a conductive layer 31 and a composite layer. The insulating layer 35 between the material layers 32, the first surface 3201 of the composite material layer 32 is in contact with the metal substrate 33, and the second surface 3202 is in contact with the insulating layer 35. The insulating layer 35 has a through hole 351 corresponding to the conductive pattern 311 for placing the package component to package the package component on the package substrate 30. The technical solution also provides a package structure including the above package substrate. Referring to FIG. 10, the package structure 4 provided by the present technical solution includes the package substrate 30, the package component 36, and the encapsulation resin 37 as shown in the third embodiment. The package component 36 is a device for implementing a specific processing function, and may be an integrated circuit chip, a capacitive inductor element, or a memory or other device. The method of packaging the package component 36 on the package substrate 30 is not limited. In this embodiment, the package component 36 is fixed in the through hole 351 ® by the encapsulation resin 37, is in contact with the composite material layer 32, and is electrically connected to the conductive pattern 311 by the metal wire 361, thereby implementing the package component 36 and the package substrate. 30 signal transmission and processing. When the package component 36 is in operation, the heat generated by the package component 36 and the conductive pattern 311 can be quickly transferred to the metal substrate 33 by the carbon nanotube array in the composite material layer 32, and quickly dissipated to the outside by the metal substrate 33. Of course, the package structure 4 includes the package substrate 30 as shown in FIG. 9 as shown in FIG. 9 , and may also include the package substrate as shown in FIG. 1 or FIG. 8 , and 12 201011873 may also have better heat dissipation effect. In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above is only the preferred embodiment of the present invention. ^There is no way to limit the scope of the patent in this case. Equivalent modifications or variations made by persons skilled in the art to the present invention in the spirit of the present invention are intended to be included in the scope of the following claims. [Simple Description of the Drawings] ® 1 is a schematic diagram of a package substrate provided by the technical party (4) - the actual embodiment of the present invention. The layer of the chemical layer is provided on the bottom of the wire provided by the first embodiment of the present invention. The substrate is provided on the catalyst layer. The substrate is provided on the catalyst layer. The first embodiment provides the removal of the substrate and the catalyst. The polymer matrix coating provided by the first embodiment and the first embodiment of the present invention is shown in FIG. A schematic diagram of a package substrate provided by an embodiment of the present invention is a schematic diagram of a package substrate provided by a third embodiment of the present invention. FIG. 13 is a schematic diagram of a package structure including the package substrate shown in FIG. 9 according to the present technical solution. . [Main component symbol description] package substrate 10, 20, 30 conductive layer 11, 31 composite material layer 12, 32 metal substrate 13, 23, 33 conductive pattern ❿ first surface 111, 211, 311 1201, 2201 '3201 second surface 1202, 2202 ' 3202 polymer matrix 121 , 221 carbon nanotube array 122 , 222 first end portion 1221 , 2221 second end portion 1222 ' 2222 substrate 100 catalyst layer Lu insulating layer 14 35 through hole 351 package component 36 encapsulation resin 37 metal wire 361 14